CN112005324A - 结构化的平面m型六方晶系铁氧体及其使用方法 - Google Patents

结构化的平面m型六方晶系铁氧体及其使用方法 Download PDF

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CN112005324A
CN112005324A CN201980025094.9A CN201980025094A CN112005324A CN 112005324 A CN112005324 A CN 112005324A CN 201980025094 A CN201980025094 A CN 201980025094A CN 112005324 A CN112005324 A CN 112005324A
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oriented
grain
ferrite
hexagonal
type
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陈亚杰
凯文·林
张莉
迈克尔·S·怀特
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Rogers Corp
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Abstract

一种晶粒取向的M型六方晶系铁氧体,具有式MeFe12O19和有效提供c面内的平面磁各向异性和磁化,或锥面各向异性的掺杂物,在六方晶体结构中,其中Me为Sr2+、Ba2+或Pb2+,以及其中大于30%,优选地大于80%的铁氧体晶粒的c轴垂直于c面取向。

Description

结构化的平面M型六方晶系铁氧体及其使用方法
相关申请的交叉引用
本申请要求于2018年4月12日提交的美国申请62/656,522的优先权和权益,其通过引用整体并入本文。
背景技术
本公开涉及晶粒取向的M型六方晶系铁氧体,其在宽范围的工作频率下具有高的磁导率和低的磁损耗。
尖晶石和六方晶系铁氧体具有用于各种低外形的电子装置(例如垂直磁记录、天线、微波吸收器和电磁干扰抑制器)的相当大的潜力。随着微波通信市场的日益发展,铁氧体压实体(compact)或膜的磁性和微波特性可以被定制以满足各种应用的要求。
在微波频率下的高磁导率和低磁损耗将为构建用于电子通信的电小天线提供材料。铁氧体基底的独特磁介电性质允许实现天线元件的小型化,而没有后续通常在高介电常数基底中观察到的带宽损失。因此,磁介电材料在应用于广泛用于个人移动电话、基站等的具有宽的带宽的小型化天线上具有很大的潜力。例如,微波天线和感应器二者均是先进微波通信中的关键组件。
需要具有适用于微波通信应用等的磁介电特性的新的铁氧体。
发明内容
在一方面,晶粒取向的M型六方晶系铁氧体具有式MeFe12O19和有效地在六方晶体结构中提供c面内的平面磁各向异性和磁化,或易锥面各向异性的掺杂物,其中Me为Sr2+、Ba2+或Pb2+,以及其中大于30%,优选地大于80%的铁氧体晶粒的c轴垂直于c面取向。
在另一方面,包括包含晶粒取向的M型六方晶系铁氧体的制品。
在又一方面,制造掺杂的晶粒取向的M型六方晶系铁氧体的方法包括:制备多个包含有效提供c面内的平面磁各向异性和易磁化,或锥面各向异性的掺杂物的式MeFe12O19的铁氧体晶粒,其中Me为Sr2+、Ba2+或Pb2+;使多个铁氧体晶粒取向使得大于30%,优选地大于80%的铁氧体晶粒的c轴垂直于c面取向,以提供掺杂的晶粒取向的M型六方晶系铁氧体;以及任选地,在大于800℃,优选地在800℃至1350℃的温度下对掺杂的晶粒取向的M型六方晶系铁氧体进行烧结,以提供密度为理论密度的至少85%,优选地大于理论密度的90%的经烧结材料。
本领域技术人员将从以下详细描述和所附权利要求中认识并理解上述和其他特征。
具体实施方式
本文描述了新的晶粒取向的M型六方晶系铁氧体,其可以用于提供在宽范围的工作频率下(例如在30MHz至1000MHz的VHF带和300MHz至1000MHz的UHF带下)具有高的磁导率和低的磁损耗的磁介电材料。本文公开的材料可以具有大于或等于约80MHz、100MHz、或甚至150MHz及以上的相对磁导率,这是之前对于六方晶系铁氧体材料未观察到的。
在一方面,晶粒取向的M型六方晶系铁氧体具有式MeFe12O19和有效地在六方晶体结构中提供c面(即,易基面(easy basal plane))内的平面磁各向异性和易磁化,或易锥面各向异性的掺杂物,其中Me为Sr2+、Ba2+或Pb2+,以及其中铁氧体的大于30%,优选地大于80%的晶粒沿晶体结构的垂直于c面的c轴取向。晶粒取向的六方晶系铁氧体也被称为结构化的六方晶系铁氧体(textured hexagonal ferrite)。
六方晶系铁氧体具有其中平面轴被称为“a”(a1、a2、a3)轴的晶体结构。c面平面也被称为基面。c轴为在c面之外的轴。纯的MFe12O19结构中的适当的掺杂物或掺杂物的混合物可以从单轴c轴到c面或易锥面容易地调节(tailor)磁各向异性。因此,易磁化可以从c轴到c面或易锥面变化。同时,虽然c面或锥面易磁化,但c轴变为难磁化轴(hard axis)。本发明人开发了在保持c面或锥面内的易磁化的同时沿晶体结构的c轴具有出乎意料的高度取向的M型六方晶系铁氧体。在晶粒取向的铁氧体中,铁氧体的大于30%,优选地大于80%的晶粒沿晶体结构的垂直于c面的c轴取向。
掺杂物提供c面内的平面磁各向异性(即,易磁化),或晶体内的易锥面各向异性。易轴(easy axis)被定义为磁化方向的优选的轴。如本文所用,易锥面各向异性为稳定的磁态围绕特定的对称轴成一个角度的各向异性。掺杂物可以为单一掺杂物,或掺杂物的混合物。在一方面,掺杂物包括Co、Ti、Zr、Sn、Ir、Sc、In、Zn、Mg、Cu、Ni、Bi、Al、Ga、La、或其组合。更具体地,掺杂物包括Co2+/Ti4+、Co2+/Zr4+、Co2+/Sn4+、Co2+/Ir4+、Bi2+/Co2+/Ti4+、Bi2+/Co2+/Zr4+、Bi2+/Co2+/Sn4+、或其组合。
在一方面,掺杂物取代晶粒取向的M型六方晶系铁氧体中的至少部分Fe。
本公开的具体的晶粒取向的M型六方晶系铁氧体包括具有下式的铁氧体:BixBa1-x(CoTi)yFe12-2yO19(x=0至0.8,y=0.5至1.5)、Ba(CoTi)xFe12-2xO19(x=0.5至1.5)、Ba(CoZr)xFe12-2xO19(x=0.5至1.5)、Ba(CoSn)xFe12-2xO19(x=0.5至1.5)、Ba(CoIr)xFe12-2xO19(x=0.5至1.5)、BixSr1-x(CoTi)yFe12-2yO19(x=0至0.8,y=0.5至1.5)、Sr(CoTi)xFe12-2xO19(x=0.5至1.5)、Sr(CoZr)xFe12-2xO19(x=0.5至1.5)、Sr(CoSn)xFe12-2xO19(x=0.5至1.5)、和Pb(CoTi)xFe12-2xO19(x=0.5至1.5)。优选的晶粒取向的M型铁氧体包括具有下式的铁氧体:BixBa1-x(CoTi)yFe12-2yO19(x=0至0.8,y=0.5至1.5)、Ba(CoTi)xFe12-2xO19(x=0.5至1.5)、Ba(CoZr)xFe12-2xO19(x=0.5至1.5)和Ba(CoSn)xFe12-2xO19(x=0.5至1.5)。具体的晶粒取向的M型六方晶系铁氧体具有式(BixSryBa1-x-y)(CoTi)zFe12-2zO19,其中x为0.05至0.5,y为0至1以及z为0.5至2.0。在该具体的铁氧体中,Sr取代部分Ba。
晶粒取向的M型六方晶系铁氧体可以具有许多有利特性中的一者或更多者。相对磁导率是表示磁性材料在高频率应用中的性能的特性,并且是材料线性响应于施加的磁场的磁化程度相对于游离物质的磁化程度的量度。相对磁导率可以在1MHz至1000MHz下通过阻抗分析仪或者在0.5GHz至10GHz下通过具有同轴空气管路固定装置(airline fixture)的矢量网络分析仪(VNA,Vector network analyzer)来测量。晶粒取向的M型六方晶系铁氧体在50MHz至300MHz的工作频率下的面内相对磁导率可以大于50,大于80,大于100,或大于150。优选地,晶粒取向的M型六方晶系在100MHz的工作频率下的面内相对磁导率可以大于50,大于80,大于100,或大于150。
磁损耗角正切值、介电损耗角正切值和介电常数也是材料的磁介电特性的量度。晶粒取向的M型六方晶系铁氧体可以具有在100MHz下小于0.5,或甚至小于0.2,优选地在100MHz下小于0.1的磁损耗角正切值。磁损耗角正切值可以通过阻抗分析仪或具有同轴空气管路固定装置的VNA来测量。
晶粒取向的M型六方晶系铁氧体可以具有在0MHz至300MHz下小于0.02,优选地在30MHz至300MHz下小于0.03的介电损耗角正切值。介电损耗角正切值可以通过阻抗分析仪或具有同轴空气管路固定装置的VNA来测量。
晶粒取向的M型六方晶系铁氧体可以具有在30MHz至300MHz下10至30,或者在300MHz至1000MHz下6至30的介电常数。介电常数可以通过阻抗分析仪或具有同轴空气管路固定装置的VNA来测量。
在一方面,晶粒取向的M型六方晶系铁氧体具有在50MHz至300MHz的工作频率下大于80的面内相对磁导率;以及在100MHz下小于0.2,优选地在100MHz下小于0.1的磁损耗角正切值。
在另一方面,晶粒取向的M型六方晶系铁氧体具有在30MHz至300MHz下小于0.5,或小于0.2,优选地在30MHz至300MHz下小于0.1的磁损耗角正切值;以及在30MHz至300MHz下小于0.05,优选地在30MHz至300MHz下小于0.02的介电损耗角正切值。
在另一方面,晶粒取向的M型六方晶系铁氧体各自具有在50MHz至300MHz的工作频率下大于50,或者在100MHz的工作频率下大于50的面内磁导率;在100MHz下小于0.5的磁损耗角正切值;在0MHz至300MHz下小于0.02的介电损耗角正切值;以及在30MHz至300MHz下10至30,或者在300MHz至1000MHz下6至30的介电常数。
在又一方面,晶粒取向的M型六方晶系铁氧体各自具有在50MHz至300MHz的工作频率下大于80,或者在100MHz的工作频率下大于80的面内磁导率;在100MHz下小于0.2的磁损耗角正切值;在30MHz至300MHz下小于0.03的介电损耗角正切值;以及在30MHz至300MHz下10至30,或者在300MHz至1000MHz下6至30的介电常数。
在再一方面,晶粒取向的M型六方晶系铁氧体具有在50MHz至300MHz的工作频率下大于150,或者在100MHz的工作频率下大于150的面内磁导率;在100MHz下小于0.1的磁损耗角正切值;在30MHz至300MHz下优选小于0.03的介电损耗角正切值;以及在300MHz至1000MHz下6至30的介电常数。
晶粒取向的M型六方晶系铁氧体在c面内(沿a-轴)的晶粒尺寸可以为0.5微米至2微米(μm)、2μm至6μm、6μm至20μm、20μm至100μm、100μm至200μm、或高至300μm。
在一方面,对晶粒取向的M型六方晶系铁氧体进行烧结。烧结可以在大于800℃,优选地在800℃至1350℃的温度下进行。经烧结的晶粒取向的M型六方晶系铁氧体的烧结密度可以为理论密度的至少85%,优选为理论密度的至少90%。理论密度通过晶体结构和化学配方(chemical formulation)或x-射线衍射测量来计算。
本文还包括包含本文所述的晶粒取向的M型六方晶系铁氧体的制品。示例性制品包括感应器、垂直磁记录、天线、微波吸收器、电磁干扰抑制器或屏蔽材料例如无线电力装置和近场通信中的屏蔽材料。在消费性电子装置的情况下,掺杂的晶粒取向的M型六方晶系铁氧体有望在使用者的手或头的存在下提供改善的性能,更好的吸收辐射特性等。
本文还包括制造掺杂的晶粒取向的M型六方晶系铁氧体的方法,其包括:制备多个包含有效提供c面内的平面磁各向异性和易磁化,或易锥面各向异性的掺杂物的式MeFe12O19的铁氧体晶粒,其中Me为Sr2+、Ba2+或Pb2+;使多个铁氧体晶粒取向使得大于30%,优选地大于80%的铁氧体晶粒的c轴垂直于c面取向,以提供掺杂的晶粒取向的M型六方晶系铁氧体;以及任选地,在大于800℃,优选地在800℃至1350℃的温度下对掺杂的晶粒取向的M型六方晶系铁氧体进行烧结,以提供密度为理论密度的至少85%,优选地大于理论密度的90%的经烧结材料。
在一方面,掺杂物通过用CoTi、CoZr或CoSn替代部分Fe来提供。
在一方面,制备单个晶粒包括煅烧和烧结干粉末、溶胶-凝胶法、熔盐法、共沉淀法、溶胶-凝胶水热法、水热法、或另外的化学法。煅烧/烧结干粉末是常规的陶瓷法。
在常规的陶瓷法的实例中,BaFe12O19粉末通过对BaCo3粉末和Fe2O3粉末进行球磨,随后在900℃至1200℃下煅烧来制备。例如,用Bi2O3掺杂粉末,随后进行另外的球磨以掺入掺杂物。
在示例性溶胶-凝胶法中,BaFe12O19或SrFe12O19通过将Ba(NO3)2或Sr(NO3)2和Fe(NO3)3·9H2O溶解在溶剂例如乙二醇中,随后进行脱水以产生凝胶,以及进行煅烧以提供BaFe12O19或SrFe12O19粉末。
在示例性熔盐法中,使用熔盐例如氯化物或硫酸盐。将反应物和盐的混合物加热至高于盐的熔融温度并产生颗粒形式。在将经反应的物料冷却之后,使用用于盐的溶剂(通常为水)来除去盐。
在示例性共沉淀法中,BaFe12O19粉末通过在室温下将硝酸铁和乙酸钡粉末以选择的Fe3+/Ba2+摩尔比混合并使用NaOH共沉淀来制备。然后,将经共沉淀的产物煅烧以提供六方晶系铁氧体。
在示例性水热法中,例如将包含氢氧化钡和FeOOH的水性悬浮体在高压釜中缓慢加热至250℃至325℃的温度,然后冷却至室温以提供六方晶系铁氧体。
例如,通过前述方法产生的任意六方晶系铁氧体粉末可以通过添加掺杂物例如Bi2O3,随后进行球磨以掺入掺杂物来掺杂。或者,可以在六方晶系铁氧体的合成期间添加掺杂物。
在一方面,使多个晶粒取向包括向晶粒施加旋转面内磁场同时向晶粒施加垂直机械压力、在施加或不施加磁场的情况下向晶粒施加机械剪切力,或其组合。在取向期间,在向晶粒施加机械压力的同时施加旋转磁场提供铁氧体粉末压实体。在一个具体方面,使多个晶粒取向包括施加磁场强度大于2000奥斯特(Oe),优选地大于8000Oe的旋转面内磁场。
在制造掺杂的晶粒取向的M型六方晶系铁氧体的方法中,在使多个铁氧体晶粒取向期间,所述方法任选地包括使晶粒取向的M型六方晶系铁氧体成形。即,可以同时施加磁场取向和机械压力以提供粉末压实体(通常被称为生坯(green body))。形成生坯之后,可以例如在900℃至1300℃的温度下烧结2小时至10小时。在烧结之前,可以将生坯压实体切成规定尺寸。可以在模具中对生坯压实体进行烧结以提供包含晶粒取向的M型六方晶系铁氧体的组件的形状。
通过以下方面进一步说明本发明。
方面1:一种晶粒取向的M型六方晶系铁氧体,具有式MeFe12O19和有效提供c面内的平面磁各向异性,或锥面各向异性的掺杂物,在六方晶体结构中,其中Me为Sr2+、Ba2+或Pb2+,以及
其中铁氧体的大于30%,优选地大于80%的晶粒沿晶体结构的垂直于c面的c轴取向。
方面2:根据方面1的晶粒取向的M型六方晶系铁氧体,其中掺杂物包括Co、Ti、Zr、Sn、Sc、In、Zn、Mg、Cu、Ni、Bi、Al、Ga、La、或其组合。
方面3:根据方面1的晶粒取向的M型六方晶系铁氧体,其中掺杂物包括Co2+/Ti4+、Co2+/Zr4+、Co2+/Sn4+、Bi2+/Co2+/Ti4+、Bi2+/Co2+/Zr4+、Bi2+/Co2+/Sn4+、或其组合。
方面4:根据方面1的晶粒取向的M型六方晶系铁氧体,具有式BixBa1-x(CoTi)yFe12-2yO19(x=0至0.8,y=0.5至1.5)、Ba(CoTi)xFe12-2xO19(x=0.5至1.5)、Ba(CoZr)xFe12- 2xO19(x=0.5至1.5)、Ba(CoSn)xFe12-2xO19(x=0.5至1.5)、Ba(CoIr)xFe12-2xO19(x=0.5至1.5)、BixSr1-x(CoTi)yFe12-2yO19(x=0至0.8,y=0.5至1.5)、Sr(CoTi)xFe12-2xO19(x=0.5至1.5)、Sr(CoZr)xFe12-2xO19(x=0.5至1.5)、Sr(CoSn)xFe12-2xO19(x=0.5至1.5)、或Pb(CoTi)xFe12-2xO19(x=0.5至1.5)。
方面5:根据方面1的晶粒取向的M型六方晶系铁氧体,具有式BixBa1-x(CoTi)yFe12-2yO19(x=0至0.8,y=0.5至1.5)、Ba(CoTi)xFe12-2xO19(x=0.5至1.5)、Ba(CoZr)xFe12- 2xO19(x=0.5至1.5)、或Ba(CoSn)xFe12-2xO19(x=0.5至1.5)。
方面6:根据方面1的晶粒取向的M型六方晶系铁氧体,其中Me为Ba2+,其中Sr替代部分Ba,并且具有式(BixSryBa1-x-y)(CoTi)zFe12-2zO19(x=0至0.8,y=0至1,z=0.5至2.0)。
方面7:根据方面1至6中任一项或更多项的晶粒取向的M型六方晶系铁氧体,其中晶粒取向的M型六方晶系铁氧体具有以下中的至少一者:
在50MHz至300MHz的工作频率下大于50,大于80,大于100,或大于150,优选地在100MHz的工作频率下大于50,大于80,大于100,或大于150的面内磁导率;
在100MHz下小于0.5,或0.2,优选地在100MHz下小于0.1的磁损耗角正切值;
在0MHz至300MHz下小于0.02,优选地在30MHz至300MHz下小于0.03的介电损耗角正切值;或者
在30MHz至300MHz下为10至30,或者在300MHz至1000MHz下为6至30的介电常数。
方面8:根据方面7的晶粒取向的M型六方晶系铁氧体,其中晶粒取向的M型六方晶系铁氧体具有
在30MHz至300MHz下小于0.2,优选地在30MHz至300MHz下小于0.1的磁损耗角正切值;以及
在30MHz至300MHz下小于0.05,优选地在30MHz至300MHz下小于0.02的介电损耗角正切值。
方面9:根据方面7的晶粒取向的M型六方晶系铁氧体,其中晶粒取向的M型六方晶系铁氧体具有
在50MHz至300MHz的工作频率下大于80的面内磁导率;以及
在100MHz下小于0.2,优选地在100MHz下小于0.1的磁损耗角正切值。
方面10:根据方面1至9中任一项或更多项的晶粒取向的M型六方晶系铁氧体,其中六方晶系铁氧体的烧结密度为理论密度的至少85%,优选为理论密度的至少90%。
方面11:根据方面1至10中任一项或更多项的晶粒取向的M型六方晶系铁氧体,其中c面内的晶粒尺寸为0.5μm至2μm、2μm至6μm、6μm至20μm、20μm至100μm、100μm至200μm、或高至300μm。
方面12:一种制品,包含根据方面1至11中任一项或更多项的晶粒取向的M型六方晶系铁氧体。
方面13:根据方面12的制品,其中制品为感应器、垂直磁记录、天线、微波吸收器、电磁干扰抑制器、或屏蔽材料。
方面14:一种无线电力装置或近场通信装置,包含根据方面13的屏蔽材料。
方面15:一种制造根据方面1至11中任一项或更多项的掺杂的晶粒取向的M型六方晶系铁氧体的方法,所述方法包括:
制备多个包含有效提供c面内的平面磁各向异性和c面内的易磁化,或易锥面各向异性的掺杂物的式MeFe12O19的铁氧体晶粒,其中Me为Sr2+、Ba2+或Pb2+
使多个铁氧体晶粒取向使得铁氧体晶粒的大于30%,优选地大于80%沿晶体结构的垂直于c面的c轴取向,以提供掺杂的晶粒取向的M型六方晶系铁氧体;以及
任选地,在大于800℃,优选地在800℃至1350℃的温度下对掺杂的晶粒取向的M型六方晶系铁氧体进行烧结,以提供密度为理论密度的至少85%,优选地大于理论密度的90%的经烧结材料。
方面16:根据方面15的方法,其中掺杂物通过用CoTi、CoZr或CoSn替代部分Fe来提供。
方面17:根据方面15和16中任一项或更多项的方法,其中制备单个晶粒包括煅烧和烧结干粉末、溶胶-凝胶法、熔盐法、共沉淀法、水热法、或化学合成法。
方面18:根据方面15至17中任一项或更多项的方法,其中使多个晶粒取向包括向晶粒施加旋转面内磁场同时向晶粒施加垂直机械压力、在施加或不施加旋转磁场的情况下向晶粒施加机械剪切力,或其组合。
方面19:根据方面18的方法,其中使多个晶粒取向包括施加磁场强度大于2000Oe,优选地大于8000Oe的旋转面内磁场。
方面20:根据方面15至19中任一项或更多项的方法,在使多个铁氧体晶粒取向期间包括使晶粒取向的M型六方晶系铁氧体成形。
方面21:根据方面15至20中任一项或更多项的方法,在烧结之前包括将晶粒取向的M型六方晶系铁氧体切成规定尺寸。
通常,组合物、方法和制品可以替代地包括本文所公开的任何成分、步骤或组件,由本文所公开的任何成分、步骤或组件组成,或者基本上由本文所公开的任何成分、步骤或组件组成。组合物、方法和制品可以另外地或替代地配制、实施或制造以不含或基本上不含对实现本权利要求的功能或目的不是必需的任何成分、步骤或组件。
除非本文另有说明或者与上下文明显矛盾,否则术语没有数量词修饰的名词的使用(特别是在所附权利要求的上下文中)将被解释为涵盖单数和复数二者。除非本文另有说明或者与上下文明显矛盾,否则术语“或”意指“和/或”。除非另有提及,否则术语“包含”、“具有”、“包括”和“含有”将被解释为开放式术语(即,意指“包括但不限于”)。“其组合”为开放式术语,其包括指定的要素中的至少一者,任选地与一个或更多个未指定的相似要素一起的组合。
除非本文另有说明,否则数值范围的记载仅旨在用作单独提及落入该范围内的每个单独值的速记方法,并且每个单独值被合并到说明书中,如同其在本文中单独记载的。所有范围的端点都包括在该范围内并且可独立组合。除非本文另有说明或者与上下文明显矛盾,否则本文所述的所有方法都可以以合适的顺序进行。任何和所有实例或示例性语言(如“例如”)的使用仅旨在更好地举例说明本发明,并且不对本发明的范围构成限制,除非另有说明。本说明书中的语言都不应被解释为表示任何未要求保护的要素对于本文中所用的本发明的实践是必不可少的。
虽然已经参照示例性实施方案描述了本发明,但本领域技术人员应理解,在不脱离本发明的范围的情况下,可以做出各种改变并且等同物可以替代其要素。此外,在不脱离本发明的实质范围的情况下,可以做出许多修改以使特定情况或材料适应本发明的教导。因此,本发明不旨在限于作为实施本发明所预期的最佳方式而公开的特定实施方案,而是本发明将包括落入所附权利要求的范围内的所有实施方案。除非本文另有说明或者与上下文明显矛盾,否则本发明涵盖其所有可能变型中的上述要素的任何组合。

Claims (21)

1.一种晶粒取向的M型六方晶系铁氧体,具有式MeFe12O19和有效地在六方晶体结构中提供c面内的平面磁各向异性和磁化、或者锥面各向异性的掺杂物,其中Me为Sr2+、Ba2+或Pb2+,以及
其中所述铁氧体的大于30%的晶粒沿晶体结构的垂直于所述c面的c轴取向。
2.根据权利要求1所述的晶粒取向的M型六方晶系铁氧体,其中所述掺杂物包括Co、Ti、Zr、Sn、Ir、Sc、In、Zn、Mg、Cu、Ni、Bi、Al、Ga、La、或其组合。
3.根据权利要求1所述的晶粒取向的M型六方晶系铁氧体,其中所述掺杂物包括Co2+/Ti4+、Co2+/Zr4+、Co2+/Sn4+、Co2+/Ir4+、Bi2+/Co2+/Ti4+、Bi2+/Co2+/Zr4+、Bi2+/Co2+/Sn4+、或其组合。
4.根据权利要求1所述的晶粒取向的M型六方晶系铁氧体,具有式BixBa1-x(CoTi)yFe12- 2yO19(x=0至0.8,y=0.5至1.5)、Ba(CoTi)xFe12-2xO19(x=0.5至1.5)、Ba(CoZr)xFe12-2xO19(x=0.5至1.5)、Ba(CoSn)xFe12-2xO19(x=0.5至1.5)、Ba(CoIr)xFe12-2xO19(x=0.5至1.5)、BixSr1-x(CoTi)yFe12-2yO19(x=0至0.8,y=0.5至1.5)、Sr(CoTi)xFe12-2xO19(x=0.5至1.5)、Sr(CoZr)xFe12-2xO19(x=0.5至1.5)、Sr(CoSn)xFe12-2xO19(x=0.5至1.5)、或Pb(CoTi)xFe12-2xO19(x=0.5至1.5)。
5.根据权利要求1所述的晶粒取向的M型六方晶系铁氧体,具有式BixBa1-x(CoTi)yFe12- 2yO19(x=0至0.8,y=0.5至1.5)、Ba(CoTi)xFe12-2xO19(x=0.5至1.5)、Ba(CoZr)xFe12-2xO19(x=0.5至1.5)、或Ba(CoSn)xFe12-2xO19(x=0.5至1.5)。
6.根据权利要求1所述的晶粒取向的M型六方晶系铁氧体,其中Me为Ba2+,其中Sr替代部分Ba,并且具有式(BixSryBa1-x-y)(CoTi)zFe12-2zO19(x=0至0.8,y=0至1,z=0.5至2.0)。
7.根据权利要求1所述的晶粒取向的M型六方晶系铁氧体,其中所述晶粒取向的M型六方晶系铁氧体具有以下中的至少一者:
在50MHz至300MHz的工作频率下大于50的面内磁导率;
在100MHz下小于0.5的磁损耗角正切值;
在0MHz至300MHz下小于0.02的介电损耗角正切值;或者
在30MHz至300MHz下为10至30的介电常数。
8.根据权利要求7所述的晶粒取向的M型六方晶系铁氧体,其中所述晶粒取向的M型六方晶系铁氧体具有
在30MHz至300MHz下小于0.2的磁损耗角正切值;以及
在30MHz至300MHz下小于0.05的介电损耗角正切值。
9.根据权利要求7所述的晶粒取向的M型六方晶系铁氧体,其中所述晶粒取向的M型六方晶系铁氧体具有
在50MHz至300MHz的工作频率下大于80的面内磁导率;以及
在100MHz下小于0.2的磁损耗角正切值。
10.根据权利要求1所述的晶粒取向的M型六方晶系铁氧体,其中所述六方晶系铁氧体的烧结密度为理论密度的至少85%。
11.根据权利要求1所述的晶粒取向的M型六方晶系铁氧体,其中所述c面内的晶粒尺寸最高至300μm。
12.一种制品,包含根据权利要求1所述的晶粒取向的M型六方晶系铁氧体。
13.根据权利要求12所述的制品,其中所述制品为感应器、垂直磁记录、天线、微波吸收器、电磁干扰抑制器、或屏蔽材料。
14.一种无线电力装置或近场通信装置,包含根据权利要求13所述的屏蔽材料。
15.一种制造根据权利要求1所述的掺杂的晶粒取向的M型六方晶系铁氧体的方法,所述方法包括:
制备多个包含有效地提供c面内的平面磁各向异性和磁化或锥面各向异性的掺杂物的式为MeFe12O19的铁氧体晶粒,其中Me为Sr2+、Ba2+或Pb2+
使多个铁氧体晶粒取向使得大于30%的所述铁氧体晶粒沿晶体结构的垂直于所述c面的c轴取向,以提供所述掺杂的晶粒取向的M型六方晶系铁氧体;以及
任选地,在大于800℃的温度下对所述掺杂的晶粒取向的M型六方晶系铁氧体进行烧结,以提供密度为理论密度的至少85%的经烧结材料。
16.根据权利要求15所述的方法,其中通过用CoTi、CoZr、或CoSn替代部分Fe来提供所述掺杂物。
17.根据权利要求15所述的方法,其中制备单个晶粒包括煅烧和烧结干粉末、溶胶-凝胶法、熔盐法、共沉淀法、水热法、溶胶凝胶水热法、或另外的化学合成法。
18.根据权利要求15所述的方法,其中使多个晶粒取向包括向晶粒施加旋转面内磁场同时向晶粒施加垂直机械压力、在施加或不施加所施加的磁场的情况下向晶粒施加机械剪切力,或其组合。
19.根据权利要求18所述的方法,其中使多个晶粒取向包括施加磁场强度大于2000Oe的旋转面内磁场。
20.根据权利要求15所述的方法,包括在使多个铁氧体晶粒取向期间使所述晶粒取向的M型六方晶系铁氧体成形。
21.根据权利要求15所述的方法,包括在进行烧结之前将所述晶粒取向的M型六方晶系铁氧体切成规定尺寸。
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DE112019001920T5 (de) 2020-12-24
US20190318858A1 (en) 2019-10-17
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US11508503B2 (en) 2022-11-22

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