TW201940726A - 鎢膜之成膜方法及控制裝置 - Google Patents
鎢膜之成膜方法及控制裝置 Download PDFInfo
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- TW201940726A TW201940726A TW108109943A TW108109943A TW201940726A TW 201940726 A TW201940726 A TW 201940726A TW 108109943 A TW108109943 A TW 108109943A TW 108109943 A TW108109943 A TW 108109943A TW 201940726 A TW201940726 A TW 201940726A
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- film
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- tungsten
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract description 93
- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 93
- 239000010937 tungsten Substances 0.000 title claims abstract description 93
- 238000000034 method Methods 0.000 title claims abstract description 91
- 229910052751 metal Inorganic materials 0.000 claims abstract description 36
- 239000002184 metal Substances 0.000 claims abstract description 36
- 230000004888 barrier function Effects 0.000 claims abstract description 28
- 230000035515 penetration Effects 0.000 claims abstract description 24
- YOUIDGQAIILFBW-UHFFFAOYSA-J tetrachlorotungsten Chemical compound Cl[W](Cl)(Cl)Cl YOUIDGQAIILFBW-UHFFFAOYSA-J 0.000 claims abstract description 21
- 150000004767 nitrides Chemical class 0.000 claims abstract description 11
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 11
- 150000003624 transition metals Chemical class 0.000 claims abstract description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 29
- 230000008569 process Effects 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 238000011534 incubation Methods 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 327
- 238000012545 processing Methods 0.000 description 77
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 75
- 238000000231 atomic layer deposition Methods 0.000 description 34
- 230000007246 mechanism Effects 0.000 description 26
- 239000004065 semiconductor Substances 0.000 description 24
- 238000010926 purge Methods 0.000 description 19
- 239000002994 raw material Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 238000005530 etching Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- 238000007664 blowing Methods 0.000 description 11
- 238000012546 transfer Methods 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 239000011148 porous material Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 6
- 229910021332 silicide Inorganic materials 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 4
- 238000011144 upstream manufacturing Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910001510 metal chloride Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- KPGXUAIFQMJJFB-UHFFFAOYSA-H tungsten hexachloride Chemical compound Cl[W](Cl)(Cl)(Cl)(Cl)Cl KPGXUAIFQMJJFB-UHFFFAOYSA-H 0.000 description 1
- WIDQNNDDTXUPAN-UHFFFAOYSA-I tungsten(v) chloride Chemical compound Cl[W](Cl)(Cl)(Cl)Cl WIDQNNDDTXUPAN-UHFFFAOYSA-I 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45529—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76882—Reflowing or applying of pressure to better fill the contact hole
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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Abstract
本發明提供一種能夠不會在溝槽或孔洞的內部產生孔隙來成膜出鎢膜之技術。
本揭示一樣態之鎢膜之成膜方法係在設置於底層的表面所形成之膜來讓底層的表面露出之貫穿部成膜出鎢膜之成膜方法;具有以下工序:以相較於該貫穿部的側壁而較厚地成膜於該底層的露出面之方式,來於該貫穿部形成過渡金屬的氮化物所形成之阻絕金屬膜之工序;以及供應氯化鎢氣體及會將氯化鎢氣體還原之還原氣體,來於該底層的露出面選擇性地形成鎢膜之工序。
Description
本揭示關於一種鎢膜之成膜方法及控制裝置。
已知有一種能夠不會在高深寬比的溝槽或孔洞內部產生孔隙來填埋鎢膜之成膜方法(參見例如專利文獻1)。
[先前技術文獻]
[專利文獻]
專利文獻1:日本特表2015-514160號公報
然而上述成膜方法中,當溝槽或孔洞為複雜形狀(例如桶型)的情況,則難以不會在溝槽或孔洞的內部產生孔隙來填埋鎢膜。
本揭示係提供一種能夠不會在溝槽或孔洞的內部產生孔隙來成膜出鎢膜之技術。
本揭示一樣態之鎢膜之成膜方法係在設置於底層的表面所形成之膜來讓底層的表面露出之貫穿部成膜出鎢膜之成膜方法;具有以下工序:係以較該貫穿部的側壁而較厚地成膜於該底層的露出面之方式,來於該貫穿部形成過渡金屬的氮化物所形成之阻絕金屬膜之工序;以及供應氯化鎢氣體及會將氯化鎢氣體還原之還原氣體,來於該底層的露出面選擇性地形成鎢膜之工序。
依據本揭示,便能夠不會在溝槽或孔洞的內部產生孔隙來成膜出鎢膜。
501‧‧‧底層
501a‧‧‧露出面
502‧‧‧膜
502a‧‧‧貫穿部
502s‧‧‧側壁
503‧‧‧阻絕金屬膜
504‧‧‧初期鎢膜
505‧‧‧主鎢膜
圖1係顯示鎢膜之一成膜方法例之流程圖。
圖2係顯示鎢膜之一成膜方法例之工序剖面圖。
圖3為培育時間的一表面依存性例子之圖式。
圖4係顯示TiN膜的膜厚與鎢膜的膜厚之一關係例之圖式。
圖5係顯示鎢膜的成膜溫度與TiN膜的蝕刻量之一關係例之圖式。
圖6係顯示用以實施TiN膜形成工序的一成膜裝置例之概略圖。
圖7係顯示ALD製程中的一氣體供應機制例之圖式。
圖8係顯示用以實施鎢膜形成工序的一成膜裝置例之概略圖。
圖9係顯示ALD製程中的一氣體供應機制例之圖式。
以下,參見添附圖式來針對本揭示之非限定性的例示實施型態加以說明。添附之所有圖式中,針對相同或相對應的組件或零件則賦予相同或相對應的參考符號而省略重複說明,
[鎢膜之成膜方法]
本揭示一實施型態相關之鎢膜之成膜方法係在設置於底層的表面所形成之膜來讓底層的表面露出之貫穿部成膜出鎢膜之方法。圖1係顯示鎢膜之一成膜方法例之流程圖。
如圖1所示,鎢膜之成膜方法具有準備半導體晶圓之工序(工序1)、形成阻絕金屬膜之工序(工序2)、形成初期鎢膜之工序(工序3)、以及填埋主鎢膜之工序(工序4)。
以下,具體地說明工序1至工序4。圖2係顯示鎢膜之一成膜方法例之工序剖面圖。
首先,如圖2(a)所示,準備底層501上形成有膜502之半導體晶圓,該膜502係設置有讓底層501的表面露出之貫穿部502a(工序1)。底層501及膜502係由阻絕金屬膜503相對於底層501的表面之培育時間會較阻絕金屬膜503相對於膜502的表面之培育時間來得短之材料的組合所形成。底層50可為例如矽、金屬矽化物。金屬矽化物舉例有鎳(Ni)矽化物、鈷(Co)矽化物、鈦(Ti)矽化物或鎢(W)矽化物。膜502可為例如矽氧化膜(SiO2膜)、矽氮化膜(SiN膜)等絕緣膜。貫穿部502a例如剖面形狀係形成為中央部的寬度Wc會較膜502之表面側(上部)的寬度Wt及下部的寬度Wb要來得寬之桶形。 但貫穿部502a之剖面形狀亦可形成為例如中央部的寬度Wc會較膜502之上部的寬度Wt及下部的寬度Wb要來得寬之菱形。又,貫穿部502a亦可形成為例如剖面形狀為Wt>Wc>Wb之V字形,或是形成為Wt=Wc=Wb之四角形。如此般,貫穿部502a的剖面形狀並未限定。貫穿部502a可為例如溝槽或孔洞。
接著,藉由原子層沉積(ALD:Atomic Layer Deposition)法或化學性氣相成長(CVD:Chemical Vapor Deposition)法來於貫穿部502a形成阻絕金屬膜503(工序2)。此時,阻絕金屬膜503相對於底層501之培育時間係較阻絕金屬膜503相對於膜502之培育時間要來得短。藉此,如圖2(b)所示,則阻絕金屬膜503便會較貫穿部502a的側壁502s及上部502t而較厚地形成於底層501的露出面501a。阻絕金屬膜503係由過渡金屬的氮化物所形成。阻絕金屬膜503可為例如氮化鈦膜(TiN膜)、氮化鉭膜(TaN膜)。例如,可藉由使用含Ti氣體(例如TiCl4氣體)及氮化氣體(例如NH3氣體)之ALD法或CVD法,來對形成有底層501及膜502之半導體晶圓形成TiN膜。
接著,藉由ALD法或CVD法來對形成有阻絕金屬膜503之貫穿部502a供應氯化鎢氣體及會將氯化鎢氣體還原之還原氣體,而於貫穿部502a成膜出初期鎢膜504(工序3)。此時,氯化鎢氣體係具有會稍微蝕刻構成阻絕金屬膜503之過渡金屬的氮化物之性質,且具有容易自構成阻絕金屬膜503之過渡金屬的氮化物表面選擇性地成長之性質。於是,如圖2(c)所示,相對較薄地成膜之貫穿部502a之側壁502s及上部502t處的阻絕金屬膜503便會被蝕刻而去除。另一方面,相對較厚地成膜之底層501之露出面501a處的部分阻絕金屬膜503則會殘留。其結果,便會以底層501的露出面501a所殘留之阻絕金屬膜503為基點而選擇性地成膜出初期鎢膜504。氯化鎢氣體可為例如六氯化鎢(WCl6)氣體或五氯化鎢(WCl5)氣體。氯化鎢氣體例如可在常溫下使固體的成膜原料昇華來生成,或是在常溫下使液體的成膜原料氣化來生成。還原氣體只要是含有氫之還原性氣體即可,例如可為氫(H2)氣、單矽烷(SiH4)氣體、二硼烷(B2H6)氣體、氨(NH3)氣、磷化氫(PH3)氣體、二氯矽烷(SiH2Cl2)氣體。又,亦可組合H2氣體、SiH4氣體、B2H6氣體、NH3氣體、PH3氣體、SiH2Cl2氣體當中2種以上的氣體。但由更加減少鎢膜中的雜質來獲得低電阻值之觀點來看,較佳宜使用H2氣體。
接著,藉由ALD法或CVD法來於底層501的表面所成長之初期鎢膜504上,直到貫穿部502a被填埋為止來成膜出主鎢膜505(工序4)。此時,如圖2(d)所示,會於工序3所形成之初期鎢膜504上,從貫穿部502a的下方側朝上方側成長出主鎢膜505。其結果,便不會在貫穿部502a的內部產生孔隙來成膜出鎢膜。工序4中可以和工序3相同的製程條件來成膜出主鎢膜505,或是以和工序3不同的製程條件來成膜出主鎢膜505。其他製程條件舉例有取代氯化鎢氣體而使用例如氟化鎢氣體之CVD法或ALD法。
如此般依據本揭示一實施型態相關之鎢膜之成膜方法,首先,係以較貫穿部502a的側壁502s及上部502t而較厚地成膜於底層501的露出面501a之方式,來於貫穿部502a形成過渡金屬的氮化物所形成之阻絕金屬膜503。接著,供應氯化鎢氣體以及會將氯化鎢氣體還原之還原氣體,來於底層501的露出面501a選擇性地形成初期鎢膜504。藉此,便可從貫穿部502a的下方側朝上方側來成長出主鎢膜505。其結果,便能不會在貫穿部502a的內部產生孔隙來成膜出鎢膜。
相對於此,工序3中,若取代氯化鎢氣體而使用氟化鎢氣體,則會有不僅是貫穿部側壁的阻絕金屬膜,且較貫穿部的側壁更厚地成膜之底層露出面的阻絕金屬膜並未殘留而亦被蝕刻之虞。此係因為氟化鎢氣體相對於過渡金屬的氮化物顯示了強蝕刻性之緣故。其結果,便無法在底層的露出面選擇性地形成鎢膜,而難以不會在貫穿部的內部產生孔隙來成膜出鎢膜。
[實施例]
接著,針對TiN膜相對於矽(Si)的表面及SiO2膜的表面之培育時間,來加以說明評估後的結果。
首先,藉由ALD法來將含Ti氣體(例如TiCl4)與含氮氣體(例如NH3)交互供應至Si的表面,並重複25次、30次、35次、40次、45次來於Si的表面成膜出TiN膜。又,藉由ALD法來將含Ti氣體(例如TiCl4)與含氮氣體(例如NH3)交互供應至SiO2膜的表面,並重複35次、40次、45次、50次、60次來於SiO2膜的表面成膜出TiN膜。接著,分別在複數部位處測量Si的表面所成膜之TiN膜的膜厚及SiO2膜的表面所成膜之TiN膜的膜厚,並針對各測量值來計算出平均膜厚。
圖3係顯示培育時間的一表面依存性例子之圖式。圖3中,橫軸表示藉由ALD法來成膜出TiN膜情況的循環數(次),縱軸表示TiN膜的平均膜厚(nm)。又,以圓形記號來表示於Si的表面成膜出TiN膜時的循環數與TiN膜的平均膜厚之關係,並將近似線以實線來表示。以三角記號來表示於SiO2膜的表面成膜出TiN膜時的循環數與TiN膜的平均膜厚之關係,並將近似線以虛線來表示。
如圖3所示,可得知於Si的表面成膜出TiN膜之情況,相較於SiO2膜的表面成膜出TiN膜之情況,會以較少循環數而開始TiN的成長。具體地說明,於Si的表面成膜出TiN膜之情況,推測藉由將含Ti氣體(例如TiCl4)與含氮氣體(例如NH3)交互供應至Si的表面且藉由ALD法來進行10~20次左右的循環,便會開始成長出TiN膜。另一方面,於SiO2膜的表面成膜出TiN膜之情況,推測藉由將含Ti氣體(例如TiCl4)與含氮氣體(例如NH3)交互供應至SiO2膜的表面且藉由ALD法來進行25~35次左右的循環,便會開始成長出TiN膜。由上述該等結果,在Si的表面開始TiN膜的成膜與在SiO2膜的表面開始TiN膜的成膜之間(例如循環數為20~25次之間),TiN膜僅會選擇性地成膜於Si的表面。
依據以上所說明之圖3的結果,便可說是藉由重複特定次數會於Si的表面成膜出TiN膜,但不會於SiO2膜的表面成膜出TiN膜之循環數的ALD製程,便可於Si的表面選擇性地成膜出具有特定膜厚的TiN膜。
接著,針對TiN膜的膜厚與鎢膜的膜厚之關係,來加以說明評估後的結果。
首先,藉由使用WCl6氣體及H2氣體之ALD法來分別於膜厚為0.25nm、0.41nm、0.58nm、0.95nm之TiN膜成膜出鎢膜。接著,分別測量TiN膜表面所成膜之鎢膜的膜厚。
圖4係顯示TiN膜的膜厚與鎢膜的膜厚之一關係例之圖式。圖4中,橫軸表示成膜出鎢膜前之TiN膜的膜厚(nm),縱軸表示TiN膜表面所成膜之鎢膜的膜厚(膜厚)。
如圖4所示,TiN膜的膜厚為0.25nm之情況下,鎢膜並未被成膜。另一方面,TiN膜的膜厚為0.41nm、0.58nm、0.95nm之情況下,鎢膜的膜厚 則分別為2.2nm、2.6nm、2.9nm。由此結果可得知若TiN膜的膜厚太薄,則鎢膜便不會被成膜。
依據以上所說明之圖4的結果,在底層為矽基板,膜為SiO2膜之情況下,工序2中,可說較佳是在貫穿部的側壁成膜出膜厚為0.25nm以下的TiN膜,且在矽基板的露出面成膜出膜厚為0.41nm以上的TiN膜。藉此,則在工序3中,便可使矽基板之露出面的部分TiN膜殘留,而於矽基板的露出面選擇性地成膜出鎢膜。
接著,以不同成膜溫度之條件來評估以特定時間來對膜厚為5nm之TiN膜供應WCl6氣體或WCl5氣體時的TiN膜蝕刻量。
首先,將成膜溫度控制在400℃、450℃、525℃、550℃之狀態下,藉由使用WCl6氣體及H2氣體之ALD法來於膜厚5nm之TiN膜的表面成膜出鎢膜。又,將成膜溫度控制在400℃、450℃、500℃、550℃之狀態下,藉由使用WCl5氣體及H2氣體之ALD法來於膜厚5nm之TiN膜的表面成膜出鎢膜。接著,分別測量因成膜出鎢膜而讓TiN膜被蝕刻後的膜厚。
圖5係顯示鎢膜的成膜溫度與TiN膜的蝕刻量之一關係例之圖式。圖5中,橫軸表示鎢膜的成膜溫度(℃),縱軸表示TiN膜的蝕刻量(nm)。又,將使用WCl6氣體之情況下TiN膜的蝕刻量以菱形記號來表示,將使用WCl5氣體之情況下TiN膜的蝕刻量以四角形記號來表示。
如圖5所示,將成膜溫度控制在400℃、450℃且藉由使用WCl6氣體之ALD法來於TiN膜的表面成膜出鎢膜之情況下,TiN膜的蝕刻量為5nm,可得知TiN膜已被完全蝕刻。又,將成膜溫度控制在525℃且藉由使用WCl6氣體之ALD法來於TiN膜的表面成膜出鎢膜之情況下,TiN膜的蝕刻量為大約4.8nm,可得知TiN膜大部分已被蝕刻。又,將成膜溫度控制在550℃且藉由使用WCl6氣體之ALD法來於TiN膜的表面成膜出鎢膜之情況下,可得知TiN膜的蝕刻量為大約3.1nm。如此般,在使用WCl6氣體之ALD法中,藉由控制成膜溫度,便可控制TiN膜的蝕刻量。
又,將成膜溫度控制在400℃、450℃、500℃、550℃,且藉由使用WCl5氣體之ALD法來於TiN膜的表面成膜出鎢膜的情況,TiN膜的蝕刻量係分別為約0.8nm、約0.9nm、約1.1nm、約1.4nm。
依據以上所說明之圖5的結果,可說藉由控制氯化鎢氣體的種類及成膜出氯化鎢膜時的成膜溫度,便可控制TiN膜的蝕刻量。
[成膜裝置]
圖6係顯示用以實施會形成作為阻絕金屬膜的氮化鈦膜之工序的一成膜裝置例之概略圖。圖6之成膜裝置為可藉由例如ALD法來實施成膜,或藉由CVD法來實施成膜之裝置。如圖6所示,成膜裝置係具有處理容器101、晶座102、噴淋頭103、排氣部104、處理氣體供應機構105及控制裝置106。
處理容器101係由鋁等金屬所構成,為略圓筒狀。處理容器101的側壁係形成有用以搬入或搬出為基板一例的半導體晶圓W之搬出入口111,搬出入口111可藉由閘閥112而開閉。處理容器101的本體上係設置有剖面呈矩形的圓環狀排氣導管113。排氣導管113係沿內周面而形成有槽縫113a。又,排氣導管113的外壁係形成有排氣口113b。排氣導管113的上面係設置有會封閉處理容器101的上部開口之頂壁114。頂壁114與排氣導管113之間係藉由密封環115而被氣密地密封。
晶座102會在處理容器101內水平地支撐半導體晶圓W。晶座102為大小會對應於半導體晶圓W之圓板狀,且被支撐在支撐組件123。晶座102係由氮化鋁(AlN)等陶瓷材料,或是鋁或鎳合金等金屬材料所形成,且內部埋設有用以加熱半導體晶圓W之加熱器121。加熱器121會從加熱器電源(圖中未顯示)被供電而發熱。然後,藉由晶座102上面的晶圓載置面附近所設置之熱電耦(圖中未顯示)的溫度訊號來控制加熱器121的輸出,藉以將半導體晶圓W控制為特定溫度。
晶座102係以覆蓋晶圓載置面的外周區域及晶座102的側面之方式而設置有氧化鋁等陶瓷所構成的罩組件122。
支撐晶座102之支撐組件123係從晶座102的底面中央貫穿處理容器101的底壁所形成之孔部,並延伸至處理容器101的下方,其下端係連接於升降機構124。藉由升降機構124,則晶座102便會透過支撐組件123,而在圖6所示的處理位置與其下方之一點鏈線所示之可進行晶圓搬送的搬送位置之間做升降。又,支撐組件123之處理容器101的下方係安裝有凸緣部125,處理容器101的底面與凸緣部125之間係設置有將處理容器101內 的氛圍與外部氣體加以區隔,且會隨著晶座102的升降動作而伸縮之伸縮管126。
處理容器101的底面附近係設置有從升降板127a突出於上方般之3根(僅圖示2根)晶圓支撐銷127。晶圓支撐銷127可藉由處理容器101的下方所設置之升降機構128而透過升降板127a來做升降,且可被插通在位於搬送位置之晶座102所設置的貫穿孔102a,來相對於晶座102的上面做出沒。藉由如此般地讓晶圓支撐銷127升降,便可在搬送機構(圖中未顯示)與晶座102之間進行半導體晶圓W的傳遞。
噴淋頭103會將處理氣體噴淋狀地供應至處理容器101內。噴淋頭103為金屬製,與晶座102呈對向設置,且具有與晶座102大致相同的直徑。噴淋頭103係具有被固定在處理容器101的頂壁114之本體部131,以及連接於本體部131下之噴淋板132。本體部131與噴淋板132之間係形成有氣體擴散空間133,氣體擴散空間133係以貫穿本體部131及處理容器101之頂壁114的中央之方式而設置有氣體導入孔136。噴淋板132的周緣部係形成有突出於下方之環狀突起部134,噴淋板132之環狀突起部134內側的平坦面係形成有氣體噴出孔135。
在晶座102存在於處理位置之狀態下,噴淋板132與晶座102之間會形成有處理空間137,且環狀突起部134與晶座102之罩組件22的上面會接近而形成有環狀間隙138。
排氣部104會將處理容器101的內部排氣。排氣部104係具備有連接於排氣導管113的排氣口113b之排氣配管141,以及連接於排氣配管141且具有真空幫浦或壓力控制閥等之排氣機構142。在處理時,處理容器101內的氣體會透過槽縫113a而到達排氣導管113,再從排氣導管113藉由排氣部104的排氣機構142而通過排氣配管141來被排氣。
處理氣體供應機構105會對噴淋頭103供應處理氣體。處理氣體供應機構105係具有原料氣體供應源151、還原氣體供應源152、第1N2氣體供應源154及第2N2氣體供應源155。原料氣體供應源151會供應為原料氣體之例如TiCl4氣體來作為金屬氯化物氣體。還原氣體供應源152會供應例如NH3氣體來作為還原氣體。第1N2氣體供應源154及第2N2氣體供應源155會供應為載置氣體及吹淨氣體之N2氣體。
又,處理氣體供應機構105係具有原料氣體供應管161、還原氣體供應管162、第1N2氣體供應管164及第2N2氣體供應管165。原料氣體供應管161為從原料氣體供應源151延伸之管體。還原氣體供應管162為從還原氣體供應源152延伸之管體。第1N2氣體供應管164為從第1N2氣體供應源154延伸來將N2氣體供應至原料氣體供應管161側之管體。第2N2氣體供應管165為從第2N2氣體供應源155延伸來將N2氣體供應至還原氣體供應管162側之管體。
第1N2氣體供應管164為藉由ALD法而在成膜中會常時性地供應N2氣體之第1連續N2氣體供應管。又,第2N2氣體供應管165為藉由ALD法而在成膜中會常時性地供應N2氣體之第2連續N2氣體供應管。第1N2氣體供應管164係連接於原料氣體供應管161。又,第2N2氣體供應管165係連接於還原氣體供應管162。原料氣體供應管161及還原氣體供應管162係匯流於匯流配管176,匯流配管176係連接於前述氣體導入孔136。
原料氣體供應管161、還原氣體供應管162、第1N2氣體供應管164及第2N2氣體供應管165的最下游側係分別設置有用以在ALD之際切換氣體之開閉閥171、172、174、175。又,原料氣體供應管161、還原氣體供應管162、第1N2氣體供應管164及第2N2氣體供應管165之開閉閥的上游側係分別設置有作為流量控制器之質流控制器181、182、184、185。原料氣體供應管161及還原氣體供應管162係分別設置有緩衝槽191、192,俾能夠以短時間來供應所需氣體。
控制裝置106會控制成膜裝置的各部,例如排氣部104、處理氣體供應機構105的動作。控制裝置106係具有CPU(Central Processing Unit)、ROM(Read Only Memory)及RAM(Random Access Memory)。CPU會依據RAM等記憶區域所儲存之配方來實施期望的處理。配方係設定有裝置對於製程條件之控制資訊。控制資訊可為例如氣體流量、壓力、溫度或製程時間。此外,配方及控制裝置6所使用之程式亦可被記憶在例如硬碟或半導體記憶體。又,配方等亦可在被收納於CD-ROM、DVD等可移動性之電腦可讀取的記憶媒體之狀態下,來被安裝於特定位置並被讀取。
上述方式所構成之成膜裝置中,係從處理氣體供應機構105來對處理空間137一邊供應吹淨氣體之N2氣體,一邊交互且間歇地供應原料氣體之 TiCl4氣體與還原氣體之NH3氣體,而藉由ALD法來在晶圓W上成膜出TiN膜。
具體地說明,如圖7所示,係藉由一邊以特定流量來常時性地供應來自第1N2氣體供應源154之第1N2氣體及來自第2N2氣體供應源155之第2N2氣體而作為吹淨氣體,一邊交互且間歇地供應TiCl4氣體與NH3氣體,而在TiCl4氣體供應步驟S11與NH3氣體供應步驟S12之間挾置著僅會供應吹淨氣體(N2氣體)之吹淨步驟S13、S14來交互地重複步驟S11與步驟S12。藉此,則在最初的TiCl4氣體供應步驟S11中,晶圓W上會吸附有TiCl4氣體,在接下來的吹淨步驟S13中多餘的TiCl4氣體會被吹淨,在接下來的NH3氣體供應步驟S12中會使所供應之NH3氣體與TiCl4反應,且多餘的NH3氣體會因接下來的吹淨步驟S14而被吹淨,便形成有幾乎為單分子層之薄的單位膜。進行複數次上述一連串的操作,來形成特定膜厚的TiN膜。
藉由以上,便可在於矽膜上形成有矽氧化膜之半導體晶圓W的貫穿部形成TiN膜,其中該矽氧化膜係設置有會讓矽膜的表面露出之貫穿部。
然而,由於TiN膜相對於矽膜的培育時間係較TiN膜相對於矽氧化膜的培育時間要來得短,故TiN膜便會較貫穿部的側壁而較厚地成膜於矽的露出面。
圖8係顯示用以實施鎢膜形成工序的一成膜裝置例之概略圖。圖8之成膜裝置為可藉由例如ALD法來實施成膜,或藉由CVD法來實施成膜之裝置。如圖8所示,成膜裝置係具有處理容器1、晶座2、噴淋頭3、排氣部4、處理氣體供應機構5及控制裝置6。
處理容器1係由鋁等金屬所構成,為略圓筒狀。處理容器1的側壁係形成有用以搬入或搬出為基板一例的半導體晶圓W之搬出入口11,搬出入口11可藉由閘閥12而開閉。處理容器1的本體上係設置有剖面呈矩形的圓環狀排氣導管13。排氣導管13係沿內周面而形成有槽縫13a。又,排氣導管13的外壁係形成有排氣口13b。排氣導管13的上面係設置有會封閉處理容器1的上部開口之頂壁14。頂壁14與排氣導管13之間係藉由密封環15而被氣密地密封。
晶座2會在處理容器1內水平地支撐半導體晶圓W。晶座2為大小會對應於半導體晶圓W之圓板狀,且被支撐在支撐組件23。晶座2係由氮化 鋁(AlN)等陶瓷材料,或是鋁或鎳合金等金屬材料所形成,且內部埋設有用以加熱半導體晶圓W之加熱器21。加熱器21會從加熱器電源(圖中未顯示)被供電而發熱。然後,藉由晶座2上面的晶圓載置面附近所設置之熱電耦(圖中未顯示)的溫度訊號來控制加熱器21的輸出,藉以將半導體晶圓W控制為特定溫度。
晶座2係以覆蓋晶圓載置面的外周區域及晶座2的側面之方式而設置有氧化鋁等陶瓷所構成的罩組件22。
支撐晶座2之支撐組件23係從晶座2的底面中央貫穿處理容器1的底壁所形成之孔部,並延伸至處理容器1的下方,其下端係連接於升降機構24。藉由升降機構24,則晶座2便會透過支撐組件23,而在圖8所示的處理位置與其下方之一點鏈線所示之可進行晶圓搬送的搬送位置之間做升降。又,支撐組件23之處理容器1的下方係安裝有凸緣部25,處理容器1的底面與凸緣部25之間係設置有將處理容器1內的氛圍與外部氣體加以區隔,且會隨著晶座2的升降動作而伸縮之伸縮管26。
處理容器1的底面附近係設置有從升降板27a突出於上方般之3根(僅圖示2根)晶圓支撐銷27。晶圓支撐銷27可藉由處理容器1的下方所設置之升降機構28而透過升降板27a來做升降,且可被插通在位於搬送位置之晶座2所設置的貫穿孔2a,來相對於晶座2的上面做出沒。藉由如此般地讓晶圓支撐銷27升降,便可在搬送機構(圖中未顯示)與晶座2之間進行半導體晶圓W的傳遞。
噴淋頭3會將處理氣體噴淋狀地供應至處理容器1內。噴淋頭3為金屬製,與晶座2呈對向設置,且具有與晶座2大致相同的直徑。噴淋頭3係具有被固定在處理容器1的頂壁14之本體部31,以及連接於本體部31下之噴淋板32。本體部31與噴淋板32之間係形成有氣體擴散空間33,氣體擴散空間33係以貫穿本體部31及處理容器1之頂壁14的中央之方式而設置有氣體導入孔36。噴淋板32的周緣部係形成有突出於下方之環狀突起部34,噴淋板32之環狀突起部34內側的平坦面係形成有氣體噴出孔35。
在晶座2存在於處理位置之狀態下,噴淋板32與晶座2之間會形成有處理空間37,且環狀突起部34與晶座2之罩組件22的上面會接近而形成有環狀間隙38。
排氣部4會將處理容器1的內部排氣。排氣部4係具備有連接於排氣導管13的排氣口13b之排氣配管41,以及連接於排氣配管41且具有真空幫浦或壓力控制閥等之排氣機構42。在處理時,處理容器1內的氣體會透過槽縫13a而到達排氣導管13,再從排氣導管13藉由排氣部4的排氣機構42而通過排氣配管41來被排氣。
處理氣體供應機構5會對噴淋頭3供應處理氣體。處理氣體供應機構5係具有原料氣體供應源51、第1H2氣體供應源52、第2H2氣體供應源53、第1N2氣體供應源54、第2N2氣體供應源55及SiH4氣體供應源56。原料氣體供應源51會供應為原料氣體之例如WCl6氣體來作為金屬氯化物氣體。原料氣體供應源51會將例如常溫為固體的固體原料,即WCl6加熱至適當溫度,來使WCl6昇華而生成WCl6氣體。第1H2氣體供應源52會供應作為第1還原氣體之H2氣體。第2H2氣體供應源53會供應作為添加還原氣體之H2氣體。第1N2氣體供應源54及第2N2氣體供應源55會供應為載置氣體及吹淨氣體之N2氣體。SiH4氣體供應源56會供應作為第2還原氣體之SiH4氣體。
又,處理氣體供應機構5係具有原料氣體供應管61、第1H2氣體供應管62、第2H2氣體供應管63、第1N2氣體供應管64、第2N2氣體供應管65及SiH4氣體供應管63a。原料氣體供應管61為從原料氣體供應源51延伸之管體。第1H2氣體供應管62為從第1H2氣體供應源52延伸之管體。第2H2氣體供應管63為從第2H2氣體供應源53延伸之管體。第1N2氣體供應管64為從第1N2氣體供應源54延伸來將N2氣體供應至原料氣體供應管61側之管體。第2N2氣體供應管65為從第2N2氣體供應源55延伸來將N2氣體供應至第1H2氣體供應管62側之管體。SiH4氣體供應管63a為從SiH4氣體供應源56延伸並連接於第2H2氣體供應管63般所設置之管體。
第1N2氣體供應管64係分歧為藉由ALD法而在成膜中會常時性地供應N2氣體之第1連續N2氣體供應管66,與僅在吹淨步驟時會供應N2氣體之第1間歇吹淨管67。又,第2N2氣體供應管65係分歧為藉由ALD法而在成膜中會常時性地供應N2氣體之第2連續N2氣體供應管68,與僅在吹淨步驟時會供應N2氣體之第2間歇吹淨管69。第1連續N2氣體供應管66及第1間歇吹淨管67係連接於第1連接管70,第1連接管70係連接於原料 氣體供應管61。又,第2H2氣體供應管63、第2連續N2氣體供應管68及第2間歇吹淨管69係連接於第2連接管71,第2連接管71係連接於第1H2氣體供應管62。原料氣體供應管61及第1H2氣體供應管62係匯流於匯流配管72,匯流配管72係連接於前述氣體導入孔36。
原料氣體供應管61、第1H2氣體供應管62、第2H2氣體供應管63、第1連續N2氣體供應管66、第1間歇吹淨管67、第2連續N2氣體供應管68及第2間歇吹淨管69的最下游側係分別設置有用以在ALD之際切換氣體之開閉閥73、74、75、76、77、78、79。又,原料氣體供應管61、第1H2氣體供應管62、第2H2氣體供應管63、第1連續N2氣體供應管66、第1間歇吹淨管67、第2連續N2氣體供應管68及第2間歇吹淨管69之開閉閥的上游側係分別設置有作為流量控制器之質流控制器90、82、83、84、85、86、87。質流控制器83係設置於第2H2氣體供應管63中之SiH4氣體供應管63a的匯流點上游側,質流控制器83與匯流點之間係設置有開閉閥88。又,SiH4氣體供應管63a係從上游側依序設置有質流控制器83a及開閉閥88a。於是,便可透過第2H2氣體供應管63來供應H2氣體及SiH4氣體中的任一者或兩者。原料氣體供應管61及第1H2氣體供應管62係分別設置有緩衝槽80、81,俾能夠以短時間來供應所需氣體。
控制裝置6會控制成膜裝置的各部,例如排氣部4、處理氣體供應機構5的動作。控制裝置6係具有CPU(Central Processing Unit)、ROM(Read Only Memory)及RAM(Random Access Memory)。CPU會依據RAM等記憶區域所儲存之配方來實施期望的處理。配方係設定有裝置對於製程條件之控制資訊。控制資訊可為例如氣體流量、壓力、溫度或製程時間。此外,配方及控制裝置6所使用之程式亦可被記憶在例如硬碟或半導體記憶體。又,配方等亦可在被收納於CD-ROM、DVD等可移動性之電腦可讀取的記憶媒體之狀態下,來被安裝於特定位置並被讀取。
接著,針對藉由上述方式所構成之成膜裝置於較貫穿部的側壁而於矽膜的露出面較厚地成膜有TiN膜之半導體晶圓W的貫穿部形成鎢膜時的動作來加以說明。以下的動作係藉由控制裝置6會控制成膜裝置的各部來被實施。
首先,將半導體晶圓W搬入至處理容器1內。具體地說明,在使晶座2下降至搬送位置之狀態下,打開閘閥12且藉由搬送裝置(圖中未顯示)來將半導體晶圓W透過搬出入口11而搬入至處理容器1內,並載置於已藉由加熱器21而被加熱至特定溫度之晶座2上。接著,使晶座2上升至處理位置,並將處理容器1內減壓至特定真空度。之後,打開開閉閥76、78,並關閉開閉閥73、74、75、77、79。藉此,從第1N2氣體供應源54及第2N2氣體供應源55經由第1連續N2氣體供應管66及第2連續N2氣體供應管68來將N2氣體供應至處理容器1內而使壓力上升,並讓晶座2上之半導體晶圓W的溫度穩定。此時,緩衝槽80內會從原料氣體供應源51而被供應有WCl6氣體,且緩衝槽80內的壓力會被大致維持為固定。
接著,藉由使用WCl6氣體與H2氣體之ALD法來成膜出鎢膜。
圖9係顯示ALD製程中的一氣體供應機制例之圖式。圖9之ALD製程係藉由重複會依序進行原料氣體供應步驟S1、吹淨步驟S2、還原氣體供應步驟S3及吹淨步驟S4之循環來成膜出期望膜厚的鎢膜製程。
原料氣體供應步驟S1為將WCl6氣體供應至處理空間37之步驟。原料氣體供應步驟S1中,首先係在打開開閉閥76、78之狀態下,從第1N2氣體供應源54及第2N2氣體供應源55經由第1連續N2氣體供應管66及第2連續N2氣體供應管68來持續供應N2氣體。又,藉由打開開閉閥73,來從原料氣體供應源51經由原料氣體供應管61而將WCl6氣體供應至處理容器1內的處理空間37。此時,WCl6氣體會在暫時儲存在緩衝槽80後被供應至處理容器1內。又,原料氣體供應步驟S1中,亦可經由從第2H2氣體供應源53延伸之第2H2氣體供應管63來將H2氣體作為添加還原氣體而供應至處理容器1內。在原料氣體供應步驟S1之際,係與WCl6氣體同時地供應還原氣體,藉以將所供給之WCl6氣體活性化,則在之後的還原氣體供應步驟S3之際,便會容易發生成膜反應。於是,便可維持高階梯覆蓋率,且增厚每一次循環的沉積膜厚來加快成膜速度。添加還原氣體的流量可為原料氣體供應步驟S1中不會發生CVD反應之程度的流量。
吹淨步驟S2為將處理空間37剩餘的WCl6氣體等吹淨之步驟。吹淨步驟S2係在透過第1連續N2氣體供應管66及第2連續N2氣體供應管68來持續供應N2氣體之狀態下,關閉開閉閥73來停止WCl6氣體。又,打開開 閉閥77、79而亦從第1間歇吹淨管67及第2間歇吹淨管69來供應N2氣體(間歇吹淨N2氣體),並藉由大流量的N2氣體來將處理空間37剩餘的WCl6氣體等加以吹淨。
還原氣體供應步驟S3為將H2氣體供應至處理空間37之步驟。還原氣體供應步驟S3中會關閉開閉閥77、79以停止來自第1間歇吹淨管67及第2間歇吹淨管69之N2氣體。又,在透過第1連續N2氣體供應管66及第2連續N2氣體供應管68來持續供應N2氣體之狀態下,打開開閉閥74。藉此,便可從第1H2氣體供應源52經由第1H2氣體供應管62來將作為還原氣體之H2氣體供應至處理空間37。此時,H2氣體會在暫時儲存在緩衝槽81後被供應至處理容器1內。藉由還原氣體供應步驟S3,則半導體晶圓W上所吸附之WCl6便會被還原。此時的H2氣體流量可為會充分地發生還原反應之量。
吹淨步驟S4為將處理空間37剩餘的H2氣體加以吹淨之步驟。吹淨步驟S4中,係在透過第1連續N2氣體供應管66及第2連續N2氣體供應管68來持續供應N2氣體之狀態下,關閉開閉閥74以停止來自第1H2氣體供應管62之H2氣體的供應。又,打開開閉閥77、79,而亦從第1間歇吹淨管67及第2間歇吹淨管69來供應N2氣體(間歇吹淨N2氣體),並藉由大流量的N2氣體來將處理空間37剩餘的H2氣體吹淨。
藉由上述方式,便可於TiN膜會較貫穿部的側壁而較厚地成膜在矽膜的露出面之半導體晶圓W的貫穿部來形成鎢膜。
然而,WCl6氣體係具有會稍微蝕刻構成TiN膜之過渡金屬的氮化物之性質,且具有會容易自構成TiN膜之過渡金屬的氮化物表面選擇性地成長之性質。因此,相對較薄地成膜之貫穿部側壁的TiN膜便會被蝕刻而去除。另一方面,相對較厚地成膜之矽膜露出面的部分TiN膜則會殘留。其結果,由於會在矽膜的露出面選擇性地成膜出鎢膜,故能夠不會在貫穿部的內部產生孔隙來成膜出鎢膜。
本說明書所揭示之實施型態僅為例示而非用以限制本發明之應用範圍。上述實施型態可在未背離所添附之申請專利範圍及其要旨的範圍內,而以各種型態來做省略、置換或變更。
此外,上述實施型態中,雖已針對以不同的成膜裝置來進行形成阻絕金屬膜一例,即TiN膜之工序,以及形成鎢膜之工序的情況來加以說明,但不限於此,而亦可以相同的成膜裝置來進行。
Claims (13)
- 一種鎢膜之成膜方法,係在設置於底層的表面所形成之膜來讓底層的表面露出之貫穿部成膜出鎢膜之成膜方法;具有以下工序:以相較於該貫穿部的側壁而較厚地成膜於該底層的露出面之方式,來於該貫穿部形成過渡金屬的氮化物所形成之阻絕金屬膜之工序;以及供應氯化鎢氣體及會將該氯化鎢氣體還原之還原氣體,來於該底層的露出面選擇性地形成鎢膜之工序。
- 如申請專利範圍第1項之鎢膜之成膜方法,其中該阻絕金屬膜相對於該底層表面的培育時間係較該阻絕金屬膜相對於該膜表面的培育時間要來得短。
- 如申請專利範圍第1或2項之鎢膜之成膜方法,其中該阻絕金屬膜為氮化鈦膜或氮化鉭膜。
- 如申請專利範圍第1至3項中任一項之鎢膜之成膜方法,其中該底層為矽,該膜為矽氧化膜。
- 如申請專利範圍第1至4項中任一項之鎢膜之成膜方法,其中形成該鎢膜之工序為藉由使用氯化鎢氣體及還原氣體之ALD法所進行之工序。
- 如申請專利範圍第1至4項中任一項之鎢膜之成膜方法,其中形成該鎢膜之工序係以對應於該貫穿部的側壁所成膜之氮化鈦膜的膜厚而設定之溫度來形成該鎢膜之工序。
- 如申請專利範圍第1至6項中任一項之鎢膜之成膜方法,其中形成該鎢膜之工序後,另具有將鎢膜填埋於該貫穿部之工序。
- 如申請專利範圍第7項之鎢膜之成膜方法,其中填埋該鎢膜之工序係以不同於形成該鎢膜之工序的製程條件來進行。
- 如申請專利範圍第1至8項中任一項之鎢膜之成膜方法,其中該氯化鎢氣體為WCl 6氣體或WCl 5氣體。
- 如申請專利範圍第1至9項中任一項之鎢膜之成膜方法,其中該還原氣體係選自H 2氣體、SiH 4氣體、B 2H 6氣體及NH 3氣體之至少1種。
- 如申請專利範圍第1至10項中任一項之鎢膜之成膜方法,其中該貫穿部之剖面形狀為中央部的寬度會較該膜表面側的寬度要來得寬。
- 如申請專利範圍第1至11項中任一項之鎢膜之成膜方法,其中該貫穿部為溝槽或孔洞。
- 一種控制裝置,係藉由控制成膜裝置各部的動作來實施成膜方法之控制裝置,該成膜方法係在設置於底層的表面所形成之膜來讓底層的表面露出之貫穿部成膜出鎢膜;會實施以下工序:以相較於該貫穿部的側壁而較厚地成膜於該底層的露出面之方式,來於該貫穿部形成過渡金屬的氮化物所形成之阻絕金屬膜之工序;以及供應氯化鎢氣體及會將該氯化鎢氣體還原之還原氣體,來於該底層的露出面選擇性地形成鎢膜之工序。
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JP2019167607A (ja) | 2019-10-03 |
CN110359027B (zh) | 2022-08-09 |
US20190292656A1 (en) | 2019-09-26 |
KR20190112652A (ko) | 2019-10-07 |
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