TW201920946A - 晶圓固持設備上電鍍之遠程偵測 - Google Patents
晶圓固持設備上電鍍之遠程偵測 Download PDFInfo
- Publication number
- TW201920946A TW201920946A TW107122044A TW107122044A TW201920946A TW 201920946 A TW201920946 A TW 201920946A TW 107122044 A TW107122044 A TW 107122044A TW 107122044 A TW107122044 A TW 107122044A TW 201920946 A TW201920946 A TW 201920946A
- Authority
- TW
- Taiwan
- Prior art keywords
- sensor
- plating
- cup
- electroplating
- target area
- Prior art date
Links
- 238000007747 plating Methods 0.000 title claims abstract description 254
- 238000001514 detection method Methods 0.000 title claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 138
- 238000009713 electroplating Methods 0.000 claims abstract description 91
- 238000000034 method Methods 0.000 claims abstract description 77
- 239000002184 metal Substances 0.000 claims abstract description 66
- 229910052751 metal Inorganic materials 0.000 claims abstract description 66
- 239000012530 fluid Substances 0.000 claims description 17
- 239000003792 electrolyte Substances 0.000 claims description 16
- 230000002093 peripheral effect Effects 0.000 claims description 15
- 238000001035 drying Methods 0.000 claims description 10
- 239000008151 electrolyte solution Substances 0.000 claims description 3
- 238000000926 separation method Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 135
- 238000004140 cleaning Methods 0.000 description 73
- 238000012545 processing Methods 0.000 description 53
- 239000000243 solution Substances 0.000 description 37
- 230000008569 process Effects 0.000 description 29
- 238000004070 electrodeposition Methods 0.000 description 24
- 239000000463 material Substances 0.000 description 20
- 230000003287 optical effect Effects 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 14
- 238000005259 measurement Methods 0.000 description 14
- 239000000126 substance Substances 0.000 description 14
- 239000010408 film Substances 0.000 description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 10
- 230000007246 mechanism Effects 0.000 description 10
- 229910052718 tin Inorganic materials 0.000 description 10
- 238000012546 transfer Methods 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 9
- 239000004332 silver Substances 0.000 description 9
- 239000012459 cleaning agent Substances 0.000 description 8
- 230000012010 growth Effects 0.000 description 8
- -1 polytetrafluoroethylene Polymers 0.000 description 8
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 7
- 239000002253 acid Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000012528 membrane Substances 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 238000009736 wetting Methods 0.000 description 7
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 6
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 6
- 239000004810 polytetrafluoroethylene Substances 0.000 description 6
- 238000012795 verification Methods 0.000 description 6
- 229910001316 Ag alloy Inorganic materials 0.000 description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 5
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 229910017604 nitric acid Inorganic materials 0.000 description 5
- 239000011148 porous material Substances 0.000 description 5
- 238000006722 reduction reaction Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000002033 PVDF binder Substances 0.000 description 4
- 150000007513 acids Chemical class 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000008139 complexing agent Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 229920000557 Nafion® Polymers 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000005341 cation exchange Methods 0.000 description 3
- 210000004027 cell Anatomy 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000011068 loading method Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 239000013049 sediment Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000012815 thermoplastic material Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- UPMXNNIRAGDFEH-UHFFFAOYSA-N 3,5-dibromo-4-hydroxybenzonitrile Chemical class OC1=C(Br)C=C(C#N)C=C1Br UPMXNNIRAGDFEH-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 238000013019 agitation Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000002939 deleterious effect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000003599 detergent Substances 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 230000000246 remedial effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 238000011179 visual inspection Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- DOBUSJIVSSJEDA-UHFFFAOYSA-L 1,3-dioxa-2$l^{6}-thia-4-mercuracyclobutane 2,2-dioxide Chemical compound [Hg+2].[O-]S([O-])(=O)=O DOBUSJIVSSJEDA-UHFFFAOYSA-L 0.000 description 1
- 238000010146 3D printing Methods 0.000 description 1
- 241000486661 Ceramica Species 0.000 description 1
- 229920006370 Kynar Polymers 0.000 description 1
- 241000269951 Labridae Species 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-L Oxalate Chemical compound [O-]C(=O)C([O-])=O MUBZPKHOEPUJKR-UHFFFAOYSA-L 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229920004798 ULTEM® 9085 Polymers 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- ZOMNIUBKTOKEHS-UHFFFAOYSA-L dimercury dichloride Chemical class Cl[Hg][Hg]Cl ZOMNIUBKTOKEHS-UHFFFAOYSA-L 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000002659 electrodeposit Substances 0.000 description 1
- 230000003090 exacerbative effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229920001973 fluoroelastomer Polymers 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 239000003014 ion exchange membrane Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229920000831 ionic polymer Polymers 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000010801 machine learning Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910000370 mercury sulfate Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000008450 motivation Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9515—Objects of complex shape, e.g. examined with use of a surface follower device
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
- C25D17/08—Supporting racks, i.e. not for suspending
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/004—Sealing devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/02—Tanks; Installations therefor
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/94—Investigating contamination, e.g. dust
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Automation & Control Theory (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/638,131 | 2017-06-29 | ||
| US15/638,131 US10416092B2 (en) | 2013-02-15 | 2017-06-29 | Remote detection of plating on wafer holding apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201920946A true TW201920946A (zh) | 2019-06-01 |
Family
ID=64741927
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107122044A TW201920946A (zh) | 2017-06-29 | 2018-06-27 | 晶圓固持設備上電鍍之遠程偵測 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP7145893B2 (enExample) |
| KR (1) | KR102654656B1 (enExample) |
| CN (1) | CN110799833A (enExample) |
| TW (1) | TW201920946A (enExample) |
| WO (1) | WO2019006009A1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7100571B2 (ja) * | 2018-12-13 | 2022-07-13 | 株式会社荏原製作所 | めっき可能な基板の枚数を予測する予測モデルを構築する方法、不具合を引き起こす構成部材を予想するための選択モデルを構築する方法、およびめっき可能な基板の枚数を予測する方法 |
| WO2021221872A1 (en) * | 2020-04-30 | 2021-11-04 | Lam Research Corporation | Lipseal edge exclusion engineering to maintain material integrity at wafer edge |
| CN116263515A (zh) * | 2021-12-14 | 2023-06-16 | 盛美半导体设备(上海)股份有限公司 | 一种电镀腔漏镀预警方法及系统 |
| KR20250041087A (ko) * | 2022-08-26 | 2025-03-25 | 가부시키가이샤 에바라 세이사꾸쇼 | 기판 상태 측정 장치, 도금 장치, 및 기판 상태 측정 방법 |
| WO2025203470A1 (ja) * | 2024-03-28 | 2025-10-02 | 株式会社荏原製作所 | 検出装置及び検出方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05271989A (ja) * | 1992-03-26 | 1993-10-19 | Nippon Steel Corp | 電解処理設備の鋼帯用エッジマスクの設定方法 |
| TW373034B (en) * | 1997-10-30 | 1999-11-01 | Kazuo Ohba | Automatic plating method and apparatus thereof |
| JP3937206B2 (ja) | 1999-09-14 | 2007-06-27 | エスアイアイ・ナノテクノロジー株式会社 | 位置制御装置 |
| US6491978B1 (en) * | 2000-07-10 | 2002-12-10 | Applied Materials, Inc. | Deposition of CVD layers for copper metallization using novel metal organic chemical vapor deposition (MOCVD) precursors |
| CN2504283Y (zh) * | 2001-10-31 | 2002-08-07 | 宝山钢铁股份有限公司 | 水平电镀槽用边缘罩自动跟踪带钢装置 |
| CN2655200Y (zh) * | 2003-06-20 | 2004-11-10 | 陈仁甫 | 机电数码和激光监控系统 |
| JP4453840B2 (ja) * | 2006-02-03 | 2010-04-21 | Tdk株式会社 | 電極組立体およびめっき装置 |
| US7894037B2 (en) | 2007-07-30 | 2011-02-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2009054516A1 (ja) * | 2007-10-26 | 2009-04-30 | Arkray, Inc. | 試料検知装置およびこれを備えた測定装置 |
| US20120261254A1 (en) * | 2011-04-15 | 2012-10-18 | Reid Jonathan D | Method and apparatus for filling interconnect structures |
| US20110217848A1 (en) * | 2010-03-03 | 2011-09-08 | Bergman Eric J | Photoresist removing processor and methods |
| US9228270B2 (en) * | 2011-08-15 | 2016-01-05 | Novellus Systems, Inc. | Lipseals and contact elements for semiconductor electroplating apparatuses |
| KR102092416B1 (ko) * | 2012-03-30 | 2020-03-24 | 노벨러스 시스템즈, 인코포레이티드 | 역전류 디플레이팅을 이용한 전기도금 기판 홀더의 클리닝 |
| US9746427B2 (en) | 2013-02-15 | 2017-08-29 | Novellus Systems, Inc. | Detection of plating on wafer holding apparatus |
| CN103434647A (zh) * | 2013-09-11 | 2013-12-11 | 中国民航大学 | 一种能够消除环境干扰的飞机残冰监测装置 |
| CN205501444U (zh) * | 2016-02-22 | 2016-08-24 | 东莞市希锐自动化科技股份有限公司 | 自动滚镀线 |
-
2018
- 2018-06-27 KR KR1020207002536A patent/KR102654656B1/ko active Active
- 2018-06-27 WO PCT/US2018/039827 patent/WO2019006009A1/en not_active Ceased
- 2018-06-27 TW TW107122044A patent/TW201920946A/zh unknown
- 2018-06-27 JP JP2019570905A patent/JP7145893B2/ja active Active
- 2018-06-27 CN CN201880043013.3A patent/CN110799833A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP7145893B2 (ja) | 2022-10-03 |
| CN110799833A (zh) | 2020-02-14 |
| WO2019006009A1 (en) | 2019-01-03 |
| KR102654656B1 (ko) | 2024-04-05 |
| KR20200014440A (ko) | 2020-02-10 |
| JP2020526660A (ja) | 2020-08-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10416092B2 (en) | Remote detection of plating on wafer holding apparatus | |
| JP6671411B2 (ja) | ウェハ保持装置上のメッキの検知 | |
| KR102654656B1 (ko) | 웨이퍼 홀딩 장치 상의 도금의 리모트 검출 | |
| JP7748515B2 (ja) | 電気メッキのための幅広リップシール | |
| TW201513165A (zh) | 具有整合製程邊緣成像之電鍍及後電塡充系統與量測系統 | |
| TW201706461A (zh) | 用於超高每分鐘轉數電鍍之幾何與程序最佳化 | |
| TW201631696A (zh) | 具有夾頭組件維護模組的晶圓處理系統 | |
| US10358738B2 (en) | Gap fill process stability monitoring of an electroplating process using a potential-controlled exit step | |
| JP2004149895A (ja) | メッキ装置およびメッキ方法 | |
| US11208732B2 (en) | Monitoring surface oxide on seed layers during electroplating | |
| JP2019029472A (ja) | 基板処理装置、及び基板処理装置の部品検査方法 | |
| TWI649459B (zh) | 用於電鍍之基板的電流斜坡修整及電流脈動進入 | |
| KR102257429B1 (ko) | 기판 처리 장치 및 기판 처리 장치의 부품 검사 방법 | |
| WO2025159893A1 (en) | Dynamic liquid touch point control |