TW201917818A - Die bonding apparatus and manufacturing method of semiconductor device capable of detecting an abnormality of a bonding head - Google Patents

Die bonding apparatus and manufacturing method of semiconductor device capable of detecting an abnormality of a bonding head Download PDF

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TW201917818A
TW201917818A TW107129890A TW107129890A TW201917818A TW 201917818 A TW201917818 A TW 201917818A TW 107129890 A TW107129890 A TW 107129890A TW 107129890 A TW107129890 A TW 107129890A TW 201917818 A TW201917818 A TW 201917818A
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displacement
vibration
axis rotation
waveform
rotation direction
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TW107129890A
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TWI697981B (en
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楯充明
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日商捷進科技有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67144Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52Mounting semiconductor bodies in containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67126Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67253Process monitoring, e.g. flow or thickness monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67259Position monitoring, e.g. misposition detection or presence detection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

The subject of the present invention is to provide a die bonding apparatus having a means for detecting an abnormality of a bonding head and the like. To solve the problem, the die bonding apparatus includes a die supply part, a substrate supply part, a bonding part for bonding a die supplied from the die supply part onto a substrate supplied from the substrate supply part or onto a die already bonded to the substrate, and a control unit for controlling the die supply part, the substrate supply part and the bonding part. The bonding part includes a bonding head having a chuck for attracting the die, a driving unit having a driving shaft for moving the bonding head, and a sensor capable of detecting an angular velocity and an acceleration of the bonding head. Based on the result obtained by the sensor, the control unit compares a vibration displacement with a predetermined threshold value of vibration displacement to determine an abnormality.

Description

晶粒接合裝置及半導體裝置之製造方法Die bonding device and method for manufacturing semiconductor device

本揭示係關於晶粒接合裝置,例如能夠適用於具備例如陀螺儀感測器的晶粒接合裝置。The present disclosure relates to a die bonding device, and can be applied to, for example, a die bonding device including, for example, a gyro sensor.

半導體裝置之製造工程之一部分具有在配線基板或引線框架等(以下,單稱為基板)搭載半導體晶片(以下,單稱為晶粒)而組裝封裝體之工程,組裝封裝體之工程之一部分具有從半導體晶圓(以下,單稱為晶圓)分割晶粒之工程,和將分割之晶粒搭載在基板上之接合工程。在接合工程中使用之製造裝置為晶粒接合器等之晶粒接合裝置。A part of the manufacturing process of a semiconductor device includes a process of assembling a package by mounting a semiconductor wafer (hereinafter, simply referred to as a die) on a wiring board or a lead frame (hereinafter, simply referred to as a substrate), and a part of the process of assembling the package. A process of dividing a die from a semiconductor wafer (hereinafter, simply referred to as a wafer), and a joining process of mounting the divided die on a substrate. The manufacturing apparatus used in the bonding process is a die bonding apparatus such as a die bonder.

晶粒接合器係以焊料、鍍金、樹脂作為接合材料,將晶粒接合(搭載而予以接合)在基板或已被接合之晶粒上的裝置。將晶粒在例如接合於基板之表面的晶粒接合器中,重覆進行使用被稱為夾頭之吸附噴嘴從晶圓吸附晶粒而進行拾取,且搬運至基板上,賦予推壓力,並且藉由對接合材加熱,進行接合的動作(作業)。夾頭被安裝於接合頭之前端。接合頭係藉由ZY驅動軸等之驅動部(伺服馬達)被驅動,伺服馬達藉由馬達控制裝置被控制。The die bonder is a device that uses solder, gold plating, and resin as bonding materials to bond (attach and mount) the die to the substrate or the bonded die. The die is repeatedly picked up in a die bonder bonded to the surface of a substrate, for example, by using a suction nozzle called a chuck to pick up the die from the wafer, and to transfer the die to the substrate to apply a pressing force. The joining operation (operation) is performed by heating the joining material. The chuck is mounted at the front end of the joint head. The joint head is driven by a drive unit (servo motor) such as a ZY drive shaft, and the servo motor is controlled by a motor control device.

在伺服馬達控制中,需要以不對工件或支持工件之單元造成機械性衝擊之方式,平穩地進行加減速,移動工件。
[先前技術文獻]
[專利文獻]
In servo motor control, it is necessary to smoothly perform acceleration / deceleration and move the workpiece in a manner that does not cause mechanical impact on the workpiece or a unit supporting the workpiece.
[Prior technical literature]
[Patent Literature]

[專利文獻1]日本特開2012-175768號公報[Patent Document 1] Japanese Patent Laid-Open No. 2012-175768

[發明所欲解決之課題][Problems to be Solved by the Invention]

在晶粒接合器等之晶粒接合裝置中,要求提升接合精度等,在裝置生產的製品品質之穩定。另外,因晶粒接合裝置為了提升生產性,使拾取頭或接合頭高速動作,故由於機械性負荷增大或振動導致裝置故障或製作不良品等之風險變高。In a die bonding device such as a die bonder, it is required to improve the bonding accuracy and the like, and the quality of products produced in the device is stable. In addition, since the die bonding device moves the pick-up head or the bonding head at high speed in order to improve productivity, the risk of device failure or defective production due to increased mechanical load or vibration increases.

但是,在現狀,有無在裝置運轉中正確掌握接合頭等之動作軌跡或振動而事先檢測異常之手段的問題。However, in the current situation, is there any problem of a means for accurately grasping the motion trajectory or vibration of the joint head or the like during the operation of the device and detecting an abnormality in advance.

本揭示之課題在於提供具備檢測接合頭等之異常的手段的晶粒接合裝置。
其他之課題和新穎之特徵從本說明書之記載及附件圖面明顯可知。

[用以解決課題之手段]
An object of the present disclosure is to provide a die bonding apparatus including a means for detecting an abnormality in a bonding head or the like.
Other problems and novel features are apparent from the description of this specification and the drawings of the attachments.

[Means to solve the problem]

若簡單說明本揭示中代表性之內容的概要則如同下述般。
即是晶粒接合裝置具備晶粒供給部;基板供給部;接合部,其係將從上述晶粒供給部被供給之晶粒接合至從上述基板供給部被供給之基板或已被接合於上述基板之晶粒上;及控制部,其係控制晶粒供給部和基板供給部和接合部。上述接合部具備:接合頭,其具備吸附上述晶粒之夾頭;驅動部,其具備移動上述接合頭之驅動軸;及感測器,其能夠檢測出上述接合頭之角速度及加速度。上述控制部係使用藉由上述感測器所取得的結果,比較振動位移和事先設定的振動位移之臨界值而判斷異常。

[發明效果]
A brief description of the representative contents of this disclosure is as follows.
That is, the die bonding apparatus includes a die supply section; a substrate supply section; and a bonding section, which is used to bond the die supplied from the die supply section to the substrate supplied from the board supply section or is bonded to the substrate. On the die of the substrate; and the control part, which controls the die supply part, the substrate supply part and the bonding part. The joint portion includes a joint head including a chuck for adsorbing the crystal grains, a drive unit including a drive shaft for moving the joint head, and a sensor capable of detecting an angular velocity and an acceleration of the joint head. The control unit uses the result obtained by the sensor to compare the vibration displacement with a threshold value of a predetermined vibration displacement to determine an abnormality.

[Inventive effect]

若藉由上述晶粒接合裝置時,可以檢測出振動所致的異常。When the above-mentioned die bonding device is used, abnormality due to vibration can be detected.

在實施型態中,以檢測器檢測出動作中之接合頭的角速度及加速度,掌握現在之動作軌跡,同時比較馬達指令加速度波形,或以過去之動作儲存的振動波形,使能夠進行接合頭動作之異常診斷。In the implementation mode, the detector detects the angular velocity and acceleration of the joint head in motion, grasps the current motion trajectory, and compares the motor command acceleration waveform or the vibration waveform stored by the past motion to enable the joint head to move. Abnormal diagnosis.

以下,針對實施例及變形例使用圖面進行說明。但是,在以下之說明中,對相同構成要素賦予相同符號,省略重覆說明。

[實施例]
Hereinafter, examples and modifications will be described using drawings. However, in the following description, the same reference numerals are given to the same constituent elements, and repeated explanations are omitted.

[Example]

圖1為與實施例有關之晶粒接合器之概略的上視圖。圖2為從圖1中之箭頭A方向觀看時,說明拾取頭及接合頭之動作的圖示。FIG. 1 is a schematic top view of a die bonder related to the embodiment. FIG. 2 is a diagram illustrating the actions of the pickup head and the bonding head when viewed from the direction of arrow A in FIG. 1.

晶粒接合器10大致具有:供給安裝在成為一個或複數的最終1封裝體的印刷有製品區域(以下,稱為封裝區域P)之基板S的晶粒D的供給部1、拾取部2、中間平台部3、接合部4、搬運部5、基板供給部6、基板搬出部7,和監視各部之動作且進行控制的控制部8。Y軸方向係晶粒接合器10之前後方向,X軸方向為左右方向。晶粒供給部1被配置在晶粒接合器10之前方側,接合部4被配置在深側。The die bonder 10 generally includes a supply unit 1, a pick-up unit 2, and a supply unit 2 for supplying a die D mounted on a printed board region (hereinafter, referred to as a package region P) mounted in one or a plurality of final packages. The intermediate stage part 3, the joint part 4, the conveyance part 5, the substrate supply part 6, the substrate carry-out part 7, and the control part 8 which monitors and controls the operation of each part. The Y-axis direction is the front-back direction of the die bonder 10, and the X-axis direction is the left-right direction. The die supply section 1 is arranged on the front side of the die bonder 10, and the joint section 4 is arranged on the deep side.

首先,晶粒供給部1係供給安裝於基板S之封裝區域P的晶粒D。晶粒供給部1具有保持晶圓11之晶圓保持台12和以從晶圓11上推晶粒D之虛線所示的上推單元13。晶粒供給部1係藉由無圖示之驅動手段在XY方向移動,使拾取之晶粒D移動至上推單元13之位置。First, the die supply unit 1 supplies the die D mounted on the package region P of the substrate S. The die supply unit 1 includes a wafer holding table 12 that holds the wafer 11 and a push-up unit 13 indicated by a broken line that pushes the die D from the wafer 11. The die supply unit 1 moves in the XY direction by a driving means (not shown) to move the picked-up die D to the position of the push-up unit 13.

拾取部2具有拾取晶粒D之拾取頭21、使拾取頭21移動至Y方向之拾取頭之Y驅動部23,和使夾頭22升降、旋轉及X方向移動的無圖示的各驅動部。拾取頭21具有將被上推的晶粒D吸附保持在前端的夾頭22(也參照圖2),從晶粒供給部1拾取晶粒D,載置於中間平台31。拾取頭21具有使夾頭22升降、旋轉及X方向移動的無圖示之各驅動部。The picking section 2 includes a picking head 21 for picking up the die D, a Y driving section 23 for moving the picking head 21 to the Y direction, and various driving sections (not shown) for lifting, rotating, and moving the chuck 22 in the X direction. . The pick-up head 21 includes a chuck 22 (see also FIG. 2) that sucks and holds the pushed-up crystal grains D at the front end, picks up the crystal grains D from the crystal grain supply unit 1, and places them on the intermediate stage 31. The pick-up head 21 includes drive units (not shown) that raise, lower, rotate, and move the chuck 22 in the X direction.

中間平台部3具有暫時性地載置晶粒D之中間平台31,和用以辨識中間平台31上之晶粒D的平台辨識攝影機32。The intermediate platform section 3 includes an intermediate platform 31 on which the die D is temporarily placed, and a platform identification camera 32 for identifying the die D on the intermediate platform 31.

接合部4係以從中間平台31拾取晶粒D,接合於被搬運來的基板S之封裝區域P上,或是疊層於已被接合於基板S之封裝區域P之上的晶粒上之形式進行接合。接合部4具有與拾取頭21相同將晶粒D吸附保持於前端的夾頭42(也參照圖2)的接合頭41、使接合頭41移動至Y方向之Y驅動部43,和攝影基板S之封裝區域P之位置辨識標記(無圖示),辨識接合位置之基板辨識攝影機44。
藉由如此之構成,接合頭41根據平台辨識攝影機32之攝影資料而補正拾取位置、姿勢,從中間平台31拾取晶粒D,且根據基板辨識攝影機44之攝影資料將晶粒D接合於基板。
The bonding portion 4 is used to pick up the die D from the intermediate platform 31, and to bond the die D to the package area P of the substrate S that has been transported, or to laminate the die D that has been bonded to the package area P of the substrate S Form for joining. The bonding portion 4 includes a bonding head 41 (see FIG. 2) of the chuck 42 (see also FIG. 2) for holding and holding the crystal grain D on the front end, a Y driving portion 43 that moves the bonding head 41 to the Y direction, and a photographing substrate S, as in the pickup head 21. A position identification mark (not shown) in the package area P, and a substrate identification camera 44 for identifying a bonding position.
With this configuration, the bonding head 41 corrects the pickup position and posture based on the photographic data of the platform recognition camera 32, picks up the die D from the intermediate platform 31, and bonds the die D to the substrate based on the photographic data of the substrate recognition camera 44.

搬運部5具有抓取搬運基板S之基板搬運爪51和基板S移動之搬運通道52。基板S係藉由利用沿著搬運通道52而設置的無圖示之滾珠輪桿驅動被設置在搬運通道52之基板搬運爪51之無圖示的螺帽而移動。
藉由如此之構成,基板S係從基板供給部6沿著搬運通道52而移動至接合位置,於接合後,移動至基板搬出部7,將基板S交給至基板搬出部7。
The conveyance unit 5 includes a substrate conveyance claw 51 that grasps and conveys the substrate S, and a conveyance path 52 that moves the substrate S. The substrate S is moved by driving a non-illustrated nut of the substrate conveying claw 51 provided on the conveying path 52 with a ball wheel lever (not shown) provided along the conveying path 52.
With this configuration, the substrate S is moved from the substrate supply section 6 to the bonding position along the conveyance path 52, and after the bonding, the substrate S is moved to the substrate carrying-out section 7 and the substrate S is handed over to the substrate carrying-out section 7.

控制部8具備儲存監視且控制晶粒接合器10之各部之動作的程式(軟體)的記憶體,和實行被儲存於記憶體之程式的中央處理裝置(CPU)。The control unit 8 includes a memory that stores a program (software) that monitors and controls the operation of each part of the die bonder 10, and a central processing unit (CPU) that executes the program stored in the memory.

晶粒接合器10具有辨識晶圓11上之晶粒D之姿勢的晶圓辨識攝影機24,和辨識被載置在中間平台31之晶粒D之姿勢的平台辨識攝影機32,和辨識接合平台BS上之安裝位置的基板辨識攝影機44。必須補正辨識攝影機間之姿勢偏移,係與藉由接合頭41所進行之拾取有關的平台辨識攝影機32,和與藉由接合頭41所進行的朝安裝位置之接合有關的基板辨識攝影機44。The die bonder 10 includes a wafer recognition camera 24 that recognizes the posture of the die D on the wafer 11, a platform recognition camera 32 that recognizes the attitude of the die D placed on the intermediate platform 31, and a bonding platform BS. The camera 44 at the mounting position. It is necessary to correct the posture shift between the recognition cameras, which are the platform recognition camera 32 related to the picking up by the bonding head 41 and the substrate recognition camera 44 related to the bonding to the mounting position by the bonding head 41.

針對控制部8,使用圖3進行說明。圖3係表示控制系統之概略構成的方塊圖。控制系統80具備控制部8和驅動部86和訊號部87和光學系統88。控制部8大致具有主要以CPU(Central Processor Unit)所構成之控制、運算裝置81、記憶裝置82、輸入輸出裝置83、匯流排線84、電源部85。記憶裝置82具有以記憶有處理程式等之RAM所構成之主記憶裝置82a,和以記憶有控制所需之控制資料或畫像資料等之HDD所構成的輔助記憶裝置82b。輸入輸出裝置83具有顯示裝置狀態或資訊等之螢幕83a,和輸入操作員之指示的觸控面板83b,和操作螢幕的滑鼠83c,和擷取來自光學系統88之畫像資料的畫像擷取裝置83d。再者,輸入輸出裝置83具有控制晶粒供給部1之XY平台(無圖示)或接合頭台之ZY驅動軸等之驅動部86之馬達控制裝置83e,和從各種感測器訊號或照明裝置等之開關等之訊號部87擷取或控制訊號的I/O訊號控制裝置83f。光學系統88包含晶圓辨識攝影機24、平台辨識攝影機32、基板辨識攝影機44。控制、運算裝置81經由匯流排線84擷取所需的資料,進行運算,且進行拾取頭21等之控制,或將資訊送至螢幕83a等。The control unit 8 will be described using FIG. 3. Fig. 3 is a block diagram showing a schematic configuration of a control system. The control system 80 includes a control unit 8, a drive unit 86, a signal unit 87, and an optical system 88. The control unit 8 generally includes a control mainly composed of a CPU (Central Processor Unit), a computing device 81, a memory device 82, an input / output device 83, a bus bar 84, and a power supply unit 85. The memory device 82 includes a main memory device 82a constituted by a RAM storing a processing program and the like, and an auxiliary memory device 82b constituted by an HDD which stores control data or image data required for control. The input / output device 83 includes a screen 83a for displaying device status or information, a touch panel 83b for inputting instructions from an operator, a mouse 83c for operating the screen, and an image capturing device for capturing image data from the optical system 88 83d. Furthermore, the input / output device 83 includes a motor control device 83e that controls the XY stage (not shown) of the die supply unit 1 or a drive unit 86 that is connected to a ZY drive shaft of the headstock, and signals or illumination from various sensors. The signal unit 87 such as a switch of a device or the like is an I / O signal control device 83f that captures or controls a signal. The optical system 88 includes a wafer identification camera 24, a platform identification camera 32, and a substrate identification camera 44. The control and computing device 81 retrieves required data via the bus line 84, performs calculations, and controls the pickup head 21 and the like, or sends information to the screen 83a and the like.

控制部8係經由畫像擷取裝置83d而將以晶圓辨識攝影機24、平台辨識攝影機32及基板辨識攝影機44所攝影到的畫像資料保存在記憶裝置82。依據根據保存的畫像資料而編程的軟體,使用控制、運算裝置81而進行晶粒D及基板S之封裝區域P之定位,以及晶粒D及基板S之表面檢查。根據控制、運算裝置81所算出之晶粒D及基板S之封裝區域P之位置,藉由軟體經由馬達控制裝置83e使驅動部86移動。藉由該製程,進行晶圓上之晶粒之定位,將以拾取部2及接合部4之驅動部動作之晶粒D接合於基板S之封裝區域P上。所使用之晶圓辨識攝影機24、平台辨識攝影機32及基板辨識攝影機44係灰階、彩色等,使光強度予以數值化。The control unit 8 stores the image data captured by the wafer identification camera 24, the platform identification camera 32, and the substrate identification camera 44 in the memory device 82 via the image acquisition device 83d. According to the software programmed based on the saved image data, the control and computing device 81 is used to perform positioning of the package area P of the die D and the substrate S, and surface inspection of the die D and the substrate S. Based on the positions of the die D and the package area P of the substrate S calculated by the control and computing device 81, the drive unit 86 is moved by the software via the motor control device 83e. With this process, the die on the wafer is positioned, and the die D that operates as the driving part of the pick-up part 2 and the bonding part 4 is bonded to the package area P of the substrate S. The wafer identification camera 24, the platform identification camera 32, and the substrate identification camera 44 used are gray scale, color, etc., and the light intensity is quantified.

圖4為用以說明圖3之馬達控制裝置之基本的原理之方塊構成圖。馬達控制裝置83e具備動作控制器210和伺服大器220,控制伺服馬達230。動作控制器210具備進行理想的指令波形之生成處理的理想波形生成部211,和指令波形生成部212,和DAC(Digital to Analog Converter)213,和動作異常診斷部214。伺服放大器220具備速度迴路控制部221。FIG. 4 is a block diagram illustrating the basic principle of the motor control device of FIG. 3. FIG. The motor control device 83 e includes an operation controller 210 and a servo 220, and controls the servo motor 230. The motion controller 210 includes an ideal waveform generation unit 211 that performs ideal command waveform generation processing, an instruction waveform generation unit 212, a DAC (Digital to Analog Converter) 213, and an operation abnormality diagnosis unit 214. The servo amplifier 220 includes a speed loop control unit 221.

如圖4所示般,馬達控制裝置83e係動作控制器210和伺服放大器220成為閉迴路控制。因此,使用現在的指令位置,和從伺服馬達230所取得的實際位置及實際速度,以伺服放大器220之速度迴路控制部221進行速度控制,但是,速度迴路控制部221係藉由動作控制器210一面取得來自伺服馬達230之實際速度及取得實際位置而限制加加速度,一面再生成指令波形,而進行其速度控制。另外,理想波形生成部211及指令波形生成部212係以例如CPU(Central Processing Unit)和儲存CPU實行的程式的記憶體所構成。As shown in FIG. 4, the motor control device 83 e is a closed-loop control of the motion controller 210 and the servo amplifier 220. Therefore, the current command position and the actual position and actual speed obtained from the servo motor 230 are used to perform speed control by the speed loop control section 221 of the servo amplifier 220. However, the speed loop control section 221 is controlled by the motion controller 210. While acquiring the actual speed from the servo motor 230 and acquiring the actual position to limit the jerk, the command waveform is generated again to perform the speed control. The ideal waveform generation unit 211 and the instruction waveform generation unit 212 are configured by, for example, a CPU (Central Processing Unit) and a memory storing a program executed by the CPU.

例如,在圖4中,目標位置、目標速度、目標加速度及目標加加速度被施加至動作控制器210。而且,在指令波形生成部212經由伺服放大器220或從伺服馬達230直接逐次輸入實際位置及實際速度作為編碼器訊號。For example, in FIG. 4, a target position, a target speed, a target acceleration, and a target jerk are applied to the motion controller 210. Then, the command waveform generation unit 212 directly inputs the actual position and the actual speed through the servo amplifier 220 or the servo motor 230 as encoder signals.

動作控制器210之理想波形生成部211係從控制、運算裝置81被輸入之加加速度、加速度、速度及位置之目標值,分別生成(a)指令加加速度波形(JD),(b)指令加速度波形(AD),(c)指令速度波形(VD),(d)指令位置波形(PD)。理想波形生成部211係將指令加加速度波形(JD)、指令加速度波形(AD)、指令速度波形(VD)、指令位置波形(PD)輸出至指令波形生成部212,將指令加速度波形(AD)輸出至動作異常診斷部214。The ideal waveform generation unit 211 of the motion controller 210 generates (a) a commanded acceleration waveform (JD), and (b) a commanded acceleration from target values of jerk, acceleration, speed, and position input from the control and computing device 81. Waveform (AD), (c) command speed waveform (VD), (d) command position waveform (PD). The ideal waveform generation unit 211 outputs the commanded acceleration waveform (JD), the commanded acceleration waveform (AD), the commanded speed waveform (VD), and the commanded position waveform (PD) to the commanded waveform generation unit 212 and outputs the commanded acceleration waveform (AD). Output to the operation abnormality diagnosis unit 214.

指令波形生成部212係根據從理想波形生成部211被輸出之輸出訊號波形(從理想的位置之指令波形所取得的現在之指令位置),和根據從伺服馬達230被輸入之編碼器訊號(實際位置),一面限制加加速度,一面逐次再生成之後的指令速度波形而逐次輸出至DAC213。例如,指令波形生成部212係進行(1)指令波形輸入輸出處理,(2)編碼器訊號計數處理及(3)指令波形再生處理。The command waveform generation unit 212 is based on the output signal waveform output from the ideal waveform generation unit 211 (the current command position obtained from the command waveform at the ideal position) and the encoder signal (actually input from the servo motor 230). Position), while limiting the jerk, it sequentially outputs the command speed waveform after it is regenerated to the DAC213. For example, the instruction waveform generation unit 212 performs (1) instruction waveform input / output processing, (2) encoder signal counting processing, and (3) instruction waveform reproduction processing.

DAC213係將被輸入的數位之指令值轉換成類比訊號之速度指令值,輸出至伺服放大器220之速度迴路控制部221。另外,編碼器訊號係以編碼器信號計數器(無圖示)儲存位置偏差量以作為脈衝。The DAC213 converts the input digital command value into a speed command value of an analog signal and outputs it to the speed loop control section 221 of the servo amplifier 220. In addition, the encoder signal uses an encoder signal counter (not shown) to store the position deviation amount as a pulse.

伺服放大器220之速度迴路控制部221因應從動作控制器210被輸入之速度指令值,和從伺服馬達230被輸入之編碼器訊號,控制伺服馬達230之旋轉速度。The speed loop control unit 221 of the servo amplifier 220 controls the rotation speed of the servo motor 230 in accordance with the speed command value input from the motion controller 210 and the encoder signal input from the servo motor 230.

伺服馬達230係以因應從伺服放大器220之速度迴路控制部221被輸入之旋轉速度之控制的旋轉速度而進行旋轉,將實際位置及實際速度作為編碼器訊號而輸出至伺服放大器220之速度迴路控制部221和動作控制器210之指令波形生成部212。The servo motor 230 rotates at a rotational speed controlled by the rotational speed input from the speed loop control unit 221 of the servo amplifier 220, and outputs the actual position and actual speed as encoder signals to the speed loop control of the servo amplifier 220. The unit 221 and the command waveform generation unit 212 of the motion controller 210.

另外,在圖4之實施例中,從伺服馬達230之計數值(旋轉次數及旋轉角度)算出接合頭等之被驅動體之實際位置,根據所算出的實際位置算出實際速度。但是,即使具備直接檢測出被驅動體之位置的位置檢測裝置,使該位置檢測裝置所檢測出之位置成為實際位置亦可。In the embodiment of FIG. 4, the actual position of the driven body such as the joint head is calculated from the count value (the number of rotations and the rotation angle) of the servo motor 230, and the actual speed is calculated based on the calculated actual position. However, even if a position detection device that directly detects the position of the driven body is provided, the position detected by the position detection device may be the actual position.

動作異常診斷部214係從陀螺儀感測器45擷取角速度及XYZ方向加速度訊號,比較指令波形,抽出振動位移。動作異常診斷部214檢測出異常之情況,將異常檢測訊號輸出至指令波形生成部212,停止伺服馬達。The abnormal motion diagnosis unit 214 extracts the angular velocity and acceleration signals in the XYZ direction from the gyro sensor 45, compares the command waveforms, and extracts the vibration displacement. The abnormal operation diagnosis unit 214 detects an abnormal situation, outputs an abnormality detection signal to the command waveform generation unit 212, and stops the servo motor.

針對陀螺儀感測器之安裝位置及角速度、加速度檢測方法,使用圖5~7進行說明。圖5為表示陀螺儀感測器之角速度及加速度之檢測方法的圖示。圖6為表示陀螺儀感測器之安裝位置的圖示。圖7為表示接合頭之X軸旋轉方向之振動的圖示。The installation position, angular velocity, and acceleration detection method of the gyro sensor will be described using FIGS. 5 to 7. FIG. 5 is a diagram showing a method of detecting the angular velocity and acceleration of the gyro sensor. FIG. 6 is a diagram showing a mounting position of the gyro sensor. FIG. 7 is a diagram showing vibration in the X-axis rotation direction of the joint head.

陀螺儀感測器45使用能夠進行3軸角速度檢測及3軸加速度之檢測的6軸陀螺儀感測器。如圖5所示般,陀螺儀感測器45之角速度及加速度之檢測(振動檢測)方向,係Ax:X方向加速度(G),Ay:Y方向加速度(G),Az:Z方向加速度(G),Gx:X軸角速度(deg/s),Gy:Y軸角速度(deg/s),Gz:Z軸角速度(deg/s)。As the gyro sensor 45, a 6-axis gyro sensor capable of detecting 3-axis angular velocity and detecting 3-axis acceleration is used. As shown in FIG. 5, the angular velocity and acceleration detection (vibration detection) directions of the gyro sensor 45 are Ax: X-direction acceleration (G), Ay: Y-direction acceleration (G), and Az: Z-direction acceleration ( G), Gx: X-axis angular velocity (deg / s), Gy: Y-axis angular velocity (deg / s), Gz: Z-axis angular velocity (deg / s).

如圖6所示般,將陀螺儀感測器45設置在接近接合頭41驅動之X方向、Y方向、Z方向之驅動軸之交點的接合頭41之中心O之附近(以下,單稱為接合頭中心)。例如,X方向、Y方向、Z方向之驅動軸之交點位於接合頭41之背側(圖面之背側),中心O為接合頭41之重心。陀螺儀感測器45設置在接合頭41之表側(圖面之前方側)。依此,雖然陀螺儀感測器45位於較X方向、Y方向、Z方向之驅動軸之交點及接合頭41之中心O更前方,但是稱為位於接合頭中心。能夠從由陀螺儀感測器45取得的加速度波形和馬達指令加速度波形之差量,抽出接合頭之振動波形。As shown in FIG. 6, the gyro sensor 45 is disposed near the center O of the joint head 41 (hereinafter, simply referred to as simply referred to as “here”) near the intersection of the X-, Y-, and Z-direction drive axes. Splice head center). For example, the intersections of the drive axes in the X, Y, and Z directions are located on the back side (back side in the drawing) of the joint head 41, and the center O is the center of gravity of the joint head 41. The gyro sensor 45 is provided on the front side (the front side in the drawing) of the joint head 41. According to this, although the gyro sensor 45 is located further forward than the intersection of the drive axes in the X, Y, and Z directions and the center O of the joint head 41, it is said to be located at the center of the joint head. The vibration waveform of the joint head can be extracted from the difference between the acceleration waveform obtained by the gyro sensor 45 and the motor command acceleration waveform.

再者,如圖7所示般,即使以陀螺儀感測器45針對接合頭41之旋轉方向之振動(Gx)亦可以正確掌握。Furthermore, as shown in FIG. 7, even the vibration (Gx) of the gyro sensor 45 with respect to the rotation direction of the joint head 41 can be accurately grasped.

針對接合頭之異常診斷之順序,使用圖8~15進行說明。圖8為表示接合頭之驅動方向及Z軸角速度的圖示。圖9為表示圖8之狀態中之角速度波形及旋轉角度的圖示,圖9(A)為表示Z軸旋轉方向之角速度波形的圖示,圖9(B)為表示對圖9(A)之波形進行積分後的旋轉角度波形的圖示。圖10為表示接合頭之驅動方向及Y方向加速度的圖示。圖11為表示圖10之狀態中的加速度波形、加速度指令波形及差量加速度的圖示,圖11(A)為表示Y方向之加速度波形的圖示,圖11(B)為表示Y方向之加速度指令波形的圖示,圖11(C)為表示圖11(A)和圖11(B)之波形之差量波形的圖示。圖12為表示差量速度及位移的圖示,圖12(A)為表示對圖11(C)之波形進行積分後之Y方向之差量速度波形的圖示,圖12(B)為表示對圖12(A)之波形進行積分後之Y方向之位移波形的圖示。圖13係說明接合頭之Y方向驅動時之X方向之振動位移和Y方向之振動位移之合成波形的圖示。圖14為說明3軸方向之最大位移和3軸旋轉方向之最大位移之例的圖示。圖15為表示振動位移之偏差和臨界值的圖示。The procedure of the abnormality diagnosis of the joint head will be described with reference to FIGS. 8 to 15. FIG. 8 is a diagram showing the driving direction and the Z-axis angular velocity of the joint head. FIG. 9 is a diagram showing an angular velocity waveform and a rotation angle in a state of FIG. 8, FIG. 9 (A) is a diagram showing an angular velocity waveform in a Z-axis rotation direction, and FIG. 9 (B) is a diagram showing a comparison with FIG. 9 (A) Graphic of the rotation angle waveform after the waveform is integrated. FIG. 10 is a diagram showing the driving direction and the Y-direction acceleration of the joint head. FIG. 11 is a diagram showing an acceleration waveform, an acceleration command waveform, and a differential acceleration in the state shown in FIG. 10. FIG. 11 (A) is a diagram showing an acceleration waveform in the Y direction, and FIG. 11 (B) is a diagram showing the acceleration in the Y direction. FIG. 11 (C) is a diagram showing a difference waveform of the waveforms of FIGS. 11 (A) and 11 (B). FIG. 12 is a diagram showing a differential velocity and a displacement, FIG. 12 (A) is a diagram showing a differential velocity waveform in a Y direction after integrating the waveform in FIG. 11 (C), and FIG. 12 (B) is a diagram illustrating A diagram showing the displacement waveform in the Y direction after integrating the waveform in FIG. 12 (A). FIG. 13 is a diagram illustrating a composite waveform of the vibration displacement in the X direction and the vibration displacement in the Y direction when the joint head is driven in the Y direction. FIG. 14 is a diagram illustrating an example of the maximum displacement in the three-axis direction and the maximum displacement in the three-axis rotation direction. FIG. 15 is a graph showing deviations and critical values of vibration displacement.

(a1)動作異常診斷部214係對從陀螺儀感測器45取得的角速度訊號波形進行積分而求出旋轉方向之振動位移。如圖8所示般,於接合頭41之Y方向驅動時,測定Z軸旋轉方向之角速度訊號,取得如圖9(A)所示之Z軸旋轉方向之角速度訊號波形(Gz(deg/s)。對該Z軸旋轉方向之角速度訊號進行積分,算出圖9(B)所示之Z軸旋轉角度(deg),求出Z軸旋轉方向之振動位移。同樣,求出接合頭41之Y方向驅動時之X軸旋轉方向之振動位移和Y軸旋轉方向之振動位移。(a1) The abnormal operation diagnosis unit 214 integrates the angular velocity signal waveform obtained from the gyro sensor 45 to obtain the vibration displacement in the rotation direction. As shown in FIG. 8, when the joint head 41 is driven in the Y direction, the angular velocity signal in the Z-axis rotation direction is measured to obtain the angular velocity signal waveform (Gz (deg / s) in the Z-axis rotation direction as shown in FIG. 9 (A). ). Integrate the angular velocity signal in the Z-axis rotation direction, calculate the Z-axis rotation angle (deg) shown in FIG. 9 (B), and obtain the vibration displacement in the Z-axis rotation direction. Similarly, determine the Y of the joint head 41 The vibration displacement in the X-axis rotation direction and the vibration displacement in the Y-axis rotation direction during directional driving.

(a2)動作異常診斷部214係從陀螺儀感測器45所取得的加速度訊號波形和指令加速度波形之差量,抽出接合頭41之振動成分之波形,求出振動位移。如圖10所示般,於接合頭41之Y方向驅動時,測定Y方向之加速度訊號,取得如圖11(A)所示之Y方向之加速度訊號波形(Ay)。算出該加速度訊號波形(Ay),和如圖11(B)所示般之指令加速度波形(AD)之差量,算出圖11(C)所示般之差量加速波形(ΔAy)。對該差量加速波形(ΔAy)進行積分。算出如圖12(A)所示般之差量速度(ΔVy)。並且,對該差量速度(ΔVy)進行積分而求出如圖12(B)所示之Y方向之振動位移(Dy)。同樣,求出接合頭41之Y方向驅動時之X方向之振動位移和Z方向之之振動位移。(a2) The abnormal operation diagnosis unit 214 is based on the difference between the acceleration signal waveform and the command acceleration waveform obtained by the gyro sensor 45, and extracts the waveform of the vibration component of the joint head 41 to obtain the vibration displacement. As shown in FIG. 10, when the joint head 41 is driven in the Y direction, the acceleration signal in the Y direction is measured to obtain the acceleration signal waveform (Ay) in the Y direction as shown in FIG. 11 (A). The difference between the acceleration signal waveform (Ay) and the command acceleration waveform (AD) as shown in FIG. 11 (B) is calculated, and the difference acceleration waveform (ΔAy) as shown in FIG. 11 (C) is calculated. This differential acceleration waveform (ΔAy) is integrated. The differential velocity (ΔVy) is calculated as shown in FIG. 12 (A). Then, the differential velocity (ΔVy) is integrated to obtain the vibration displacement (Dy) in the Y direction as shown in FIG. 12 (B). Similarly, the vibration displacement in the X direction and the vibration displacement in the Z direction when the Y head is driven in the Y direction are obtained.

(a3)動作異常診斷部214係藉由在上述(a1)求出之X軸旋轉方向之振動位移、Y軸旋轉方向之振動位移及Z軸旋轉方向(3軸旋轉方向)之振動位移,算出3軸旋轉方向之振動位移之合成波形,藉由在(a2)求出之X方向之振動位移、Y方向之振動位移及Z方向(3軸方向)之振動位移,算出3軸方向之振動位移之合成波形。為了在圖13中,容易圖示,表示接合頭41之Y方向驅動時之X方向振動位移和Y方向振動位移之合成波形。(a3) The abnormal operation diagnosis unit 214 is calculated from the vibration displacement in the X-axis rotation direction, the vibration displacement in the Y-axis rotation direction, and the vibration displacement in the Z-axis rotation direction (three-axis rotation direction) obtained in the above (a1). The composite waveform of the vibration displacement in the 3 axis rotation direction is calculated from the vibration displacement in the X direction, the vibration displacement in the Y direction, and the vibration displacement in the Z direction (3 axis direction) obtained in (a2). The synthetic waveform. For ease of illustration in FIG. 13, a composite waveform of the X-direction vibration displacement and the Y-direction vibration displacement when the Y head is driven in the Y direction is shown.

(a4)動作異常診斷部214係從接合頭之3軸方向之振動位移之合成波形及3軸旋轉方向之振動位移之合成波形,求出如圖14所示般之3軸方向之振動位移之最大位移(MD),和3軸旋轉方向之振動位移之最大位移(RMD)。(a4) The abnormal operation diagnosis unit 214 calculates the vibration displacement in the three-axis direction from the composite waveform of the vibration displacement in the three-axis direction of the joint head and the composite waveform of the vibration displacement in the three-axis rotation direction as shown in FIG. 14. Maximum displacement (MD), and the maximum displacement (RMD) of the vibration displacement in the 3-axis rotation direction.

(a5)動作異常診斷部214係事先複數次測定(算出)在上述(a2)求出之接合動作中之振動位移之合成波形相同之波形,而求出與(a4)相同之最大位移並予以儲存,與在通常的接合工程中在上述(a2)測定(算出)的振動位移進行比較。(a5) The abnormal operation diagnosis unit 214 measures (calculates) the same waveform of the combined waveform of the vibration displacement in the joining operation obtained in the above (a2) several times in advance, and obtains the same maximum displacement as (a4) and gives It is stored and compared with the vibration displacement measured (calculated) in the above-mentioned (a2) in a normal joining process.

(a6)動作異常診斷部214係在通常之接合工程中在上述(a4)測定(算出)之合成波形之3軸方向之最大位移(MD)及3軸旋轉方向之最大位移(RMD)之至少一個,超過如圖15所示般事先設定的臨界值之情況,對指令波形生成部212輸出異常檢測訊號而使伺服馬達230停止,將接合頭41之動作異常之情形顯示於螢幕83a。(a6) The abnormal operation diagnosis unit 214 is at least at least the maximum displacement (MD) in the 3 axis direction and the maximum displacement (RMD) in the 3 axis rotation direction of the composite waveform measured (calculated) in the above (a4) during normal joining process. One, if the threshold value is set in advance as shown in FIG. 15, an abnormality detection signal is output to the command waveform generation unit 212 to stop the servo motor 230, and the abnormality of the operation of the joint head 41 is displayed on the screen 83a.

(a7)異常檢測時、動作異常診斷部214係以各分割成X方向、Y方向、Z方向及X軸旋轉方向、Y軸旋轉方向、Z軸旋轉方向的動作波形進行異常原因之特定。(a7) At the time of abnormality detection, the abnormality diagnosis unit 214 specifies the cause of the abnormality by using the operation waveforms divided into the X, Y, Z, and X-axis rotation directions, the Y-axis rotation direction, and the Z-axis rotation direction.

接著,針對使用與實施例有關之晶粒接合器的半導體裝置之製造方法,使用圖16進行說明。圖16係表示半導體裝置之製造方法的流程圖。
步驟S11:係將保持貼附從晶圓11被分割之晶粒D的切割膠帶16的晶圓環14儲存於晶圓卡匣(無圖示),搬入至晶粒接合器10。控制部8係將晶圓環14從填充有晶圓環14之晶圓卡匣供給至晶粒供給部1。再者,準備基板S,搬入至晶粒接合器10。控制部8係以基板供給部6將基板S安裝於基板搬運爪51。
Next, a method for manufacturing a semiconductor device using the die bonder according to the embodiment will be described with reference to FIG. 16. FIG. 16 is a flowchart showing a method of manufacturing a semiconductor device.
Step S11: The wafer ring 14 holding the dicing tape 16 to which the die D divided from the wafer 11 is stored is stored in a wafer cassette (not shown), and is transferred to the die bonder 10. The control unit 8 supplies the wafer ring 14 from the wafer cassette filled with the wafer ring 14 to the die supply unit 1. The substrate S is prepared and carried into the die bonder 10. The control unit 8 mounts the substrate S on the substrate transfer claw 51 with the substrate supply unit 6.

步驟S12:控制部8係從晶圓拾取分割的晶粒。
步驟S13:控制部8係將拾取到的晶粒,搭載至基板S上或疊層於已接合的晶粒上。控制部8係將從晶圓11拾取到的晶粒D載置於中間平台31,以接合頭41從中間平台31再次拾取晶粒D,接合於被搬運來的基板S。與步驟S13並行,進行上述接合頭之異常診斷。
Step S12: The control unit 8 picks up the divided dies from the wafer.
Step S13: The control unit 8 mounts the picked-up crystal grains on the substrate S or laminates the bonded crystal grains. The control unit 8 places the die D picked up from the wafer 11 on the intermediate stage 31, and the bonding head 41 picks up the die D again from the intermediate stage 31 and joins the transferred substrate S. In parallel with step S13, the abnormality diagnosis of the joint head is performed.

步驟S14:控制部8係以基板搬出部7從基板搬運爪51取出被接合晶粒D的基板S。從晶粒接合器10搬出基板S。Step S14: The control part 8 takes out the board | substrate S to which the die D was joined from the board | substrate conveying claw 51 by the board | substrate carrying-out part 7. The substrate S is carried out from the die bonder 10.

在實施例中,將6軸陀螺儀感測器設置在接合頭中心。接合頭動作中,從6軸陀螺儀感測器所取得的角速度抽出接合頭旋轉方向之振動波形,並且由從陀螺儀感測器所取得的加速度波形和馬達指令加速度波形之差量,抽出接合頭之振動波形。藉由比較從上述抽出之振動波形算出的振動的位移,和事先複數次測定並予以儲存的振動之位移,確認在現在的接合頭動作之振動是否有變化,檢測出裝置之異常。於此次測定的振動之位移超過事先給予的臨界值之情況,於停止馬達後裝置報告異常。藉由使用上述功能使接合頭動作,能夠實現接合頭之異常診斷。In an embodiment, a 6-axis gyroscope sensor is placed in the center of the joint head. During the operation of the joint head, the vibration waveform of the joint head rotation direction is extracted from the angular velocity obtained by the 6-axis gyro sensor, and the difference between the acceleration waveform obtained from the gyro sensor and the motor command acceleration waveform is used to extract the joint. Head vibration waveform. By comparing the displacement of the vibration calculated from the extracted vibration waveform and the displacement of the vibration measured and stored several times in advance, it is confirmed whether there is a change in the vibration of the current bonding head operation, and an abnormality of the device is detected. When the vibration displacement measured this time exceeds the critical value given in advance, the device reports an abnormality after stopping the motor. By using the above-mentioned function to move the joint head, it is possible to diagnose the abnormality of the joint head.

若藉由實施例時,能夠掌握接合頭之振動。再者,藉由在接合頭中心附近設置陀螺儀感測器,即使針對接合頭旋轉方向之振動亦可以正確地掌握。According to the embodiment, the vibration of the bonding head can be grasped. Furthermore, by providing a gyro sensor near the center of the joint head, it is possible to accurately grasp vibrations in the direction of rotation of the joint head.

再者,藉由比較接合頭之馬達指令加速度波形,或在過去之動作中儲存的振動波形,判斷現在之振動之位移是否超過事先給予的臨界值的動作,進行接合頭之異常診斷。依此,能夠事先防止裝置故障或製作不良品等。Furthermore, by comparing the acceleration waveform of the motor command of the joint head or the vibration waveform stored in the past operation, it is judged whether the movement of the current vibration exceeds the threshold value given in advance, and the abnormality diagnosis of the joint head is performed. With this, it is possible to prevent malfunction of the device, production of defective products, and the like in advance.

並且,可以以一個感測器算出也包含旋轉方向之振動位移。再者,於異常檢測時,藉由分割成X、Y方向及X軸、Y軸、Z軸旋轉方向之各方向之振動位移,亦能夠特定異常之原因。In addition, the vibration displacement including the rotation direction can be calculated with one sensor. Furthermore, in the abnormality detection, the cause of the abnormality can also be specified by dividing the vibration displacement into the X, Y direction, and the X-axis, Y-axis, and Z-axis rotation directions.

(變形例)
以下,針對代表性的變形例,例示幾個。在以下之變形例之說明中,針對具有與在上述實施例中說明者相同的構成及功能之部分,設為能夠使用與上述實施例相同之符號者。而且,針對如此之部分的說明,設為能夠在技術性不矛盾之範圍內,適當援用在上述實施例中之說明者。再者,能夠在技術性不矛盾之範圍內,適當、複合性地適用上述實施例之一部分及複數變形例之全部或一部分。
(Modification)
In the following, a few typical modifications are exemplified. In the following description of the modified example, it is assumed that parts having the same configuration and functions as those described in the above-mentioned embodiment can use the same symbols as those in the above-mentioned embodiment. It should be noted that the description of such a part can be appropriately applied to those described in the above-mentioned embodiment within a range that is not technically contradictory. In addition, all or a part of the above-mentioned embodiments and a plurality of modified examples can be appropriately and compositely applied within a technically non-contradictory range.

(變形例1)
圖17係表示圖10之狀態中的加速度波形、速度及位置的圖示,圖17(A)為表示Y方向之加速度波形的圖示,圖17(B)為表示對圖17(A)之波形進行積分後的Y方向之速度波形的圖示,圖17(C)為表示對圖17(B)之波形進行積分後的Y方向之位置波形的圖示。
(Modification 1)
FIG. 17 is a diagram showing acceleration waveforms, speeds, and positions in the state of FIG. 10, FIG. 17 (A) is a diagram showing acceleration waveforms in the Y direction, and FIG. 17 (B) is a diagram showing the acceleration waveforms in FIG. 17 (A). FIG. 17 (C) is a diagram showing a position waveform in the Y direction after integrating the waveform in FIG. 17 (B).

在實施例中,在上述(a2)於接合頭41之Y方向驅動時從陀螺儀感測器45取得的加速度訊號波形和指令加速度波形之差量求出Y方向之振動位移,但是在變形例1中,從接合頭41之動作軌跡和指令位置波形之差量求出。In the embodiment, the vibration displacement in the Y direction is obtained by the difference between the acceleration signal waveform obtained from the gyro sensor 45 and the command acceleration waveform when the (a2) is driven in the Y direction of the joint head 41, but in the modification In 1, the difference is obtained from the difference between the movement trajectory of the joint head 41 and the command position waveform.

(b1)動作異常診斷部214與實施例之(a1)相同,求出接合頭41之Y方向驅動時之X軸旋轉方向之振動位移和Y軸旋轉方向和Z軸旋轉方向之振動位移。(b1) The operation abnormality diagnosis unit 214 obtains the vibration displacement in the X-axis rotation direction and the vibration displacement in the Y-axis rotation direction and the Z-axis rotation direction when the joint head 41 is driven in the Y direction in the same manner as in the embodiment (a1).

(b2)動作異常診斷部214係根據從陀螺儀感測器45取得的加速度訊號波形,算出接合頭41之動作軌跡。如圖10所示般,於接合頭41之Y方向驅動時,測定Y方向之加速度訊號,取得如圖17(A)所示之Y方向之加速度訊號波形(Ay)。對該Y方向之加速訊號(Ay)進行積分,算出如圖17(B)所示之Y方向之速度(Vy)。並且,對該Y方向之速度(Vy)進行積分,算出如圖17(C)所示之Y方向之位置(Py),求出Y方向之動作軌跡。同樣,求出接合頭41之Y方向驅動時之X方向之動作軌跡和Z方向之之動作軌跡。(b2) The abnormal movement diagnosis unit 214 calculates the movement trajectory of the joint head 41 based on the acceleration signal waveform obtained from the gyro sensor 45. As shown in FIG. 10, when the joint head 41 is driven in the Y direction, the acceleration signal in the Y direction is measured to obtain the acceleration signal waveform (Ay) in the Y direction as shown in FIG. 17 (A). The acceleration signal (Ay) in the Y direction is integrated to calculate the velocity (Vy) in the Y direction as shown in FIG. 17 (B). Then, the velocity (Vy) in the Y direction is integrated to calculate the position (Py) in the Y direction as shown in FIG. 17 (C), and the trajectory in the Y direction is obtained. Similarly, the movement trajectory in the X direction and the movement trajectory in the Z direction when the Y head is driven in the Y direction are obtained.

(b3)動作異常診斷部214係從求出的動作軌跡和指令位置波形(PD)之差量,抽出接合頭41之振動成分之波形,求出接合頭41之Y方向驅動時之Y方向之振動位移。同樣,求出接合頭41之Y方向驅動時之X方向之振動位移和Z方向之振動位移。(b3) The operation abnormality diagnosis unit 214 extracts the waveform of the vibration component of the joint head 41 from the difference between the obtained operation trajectory and the command position waveform (PD), and determines the Y-direction direction when the joint head 41 is driven in the Y direction. Vibration displacement. Similarly, the vibration displacement in the X direction and the vibration displacement in the Z direction when the Y head is driven in the Y direction are obtained.

(b4)以後的處理與實施例之(a3)之後的處理相同。The processing after (b4) is the same as the processing after (a3) of the embodiment.

在變形例1中,在接近於驅動接合頭之X方向、Y方向、Z方向之驅動軸之交點的接合頭中心附近,設置6軸陀螺儀感測器。接合頭動作中,從6軸陀螺儀感測器所取得的角速度抽出接合頭旋轉方向之振動波形,並且根據從陀螺儀感測器所取得的加速度波形,算出接合頭之動作軌跡,從動作軌跡和馬達指令位置波形之差量抽出接合頭之振動波形。藉由比較從上述抽出之振動波形算出的振動的位移,和事先複數次測定並予以儲存的振動之位移,確認在現在的接合頭動作之振動是否有變化,檢測出裝置之異常。於此次測定的振動之位移超過事先給予的臨界值之情況,於停止馬達後裝置報告異常。藉由使用上述功能使接合頭動作,能夠實現接合頭之異常診斷。In Modification 1, a 6-axis gyro sensor is provided near the center of the joint head near the intersection of the drive axes of the X, Y, and Z directions of the drive joint. During the operation of the joint head, the vibration waveform of the joint head rotation direction is extracted from the angular velocity obtained by the 6-axis gyro sensor, and the trajectory of the joint head is calculated based on the acceleration waveform obtained from the gyro sensor. The difference from the motor command position waveform is used to extract the vibration waveform of the joint head. By comparing the displacement of the vibration calculated from the extracted vibration waveform and the displacement of the vibration measured and stored several times in advance, it is confirmed whether there is a change in the vibration of the current bonding head operation, and an abnormality of the device is detected. When the vibration displacement measured this time exceeds the critical value given in advance, the device reports an abnormality after stopping the motor. By using the above-mentioned function to move the joint head, it is possible to diagnose the abnormality of the joint head.

(變形例2)
圖18為表示與變形例2有關之陀螺儀感測器之安裝位置的圖示。
(Modification 2)
FIG. 18 is a diagram showing a mounting position of a gyro sensor according to Modification 2. FIG.

在實施例中,雖然針對將陀螺儀感測45設置在接近於接合頭41驅動之X方向、Y方向、Z方向之驅動軸之交點的接合頭41之中心O之附近之情況進行說明,但是並不限定於此,可以設置在從接合頭41之夾頭42之前端至接合頭41之上端之間的能夠安裝感測器之處。In the embodiment, the case where the gyro sensor 45 is set near the center O of the joint head 41 near the intersection of the drive axes of the X, Y, and Z directions of the joint head 41 will be described, but It is not limited to this, and may be provided at a place where a sensor can be installed from the front end of the chuck 42 of the joint head 41 to the upper end of the joint head 41.

如圖18所示般,將陀螺儀感測器45設置在接合頭41之夾頭42之前端或夾頭42之前端附近之情況,能夠直接掌握影響到接合精度的振動。As shown in FIG. 18, when the gyro sensor 45 is installed near the front end of the chuck 42 of the joint head 41 or near the front end of the chuck 42, it is possible to directly grasp the vibration that affects the joint accuracy.

在變形例2中,將6軸陀螺儀感測器設置在接合頭之夾頭前端或夾頭前端附近。依此,藉由直接掌握影響到接合精度的振動(Y方向驅動時之X方向之加速度訊號(Ax)及Y方向之加速度訊號),且與事先複數次測定並予以儲存的振動之移位進行比較,檢測出裝置之異常。In the second modification, a 6-axis gyro sensor is provided near the chuck front end of the joint head or near the chuck front end. Based on this, the vibration (acceleration signal in the X direction (Ax) and the acceleration signal in the Y direction) that affects the joint accuracy is directly grasped, and the displacement is performed with the vibration measured and stored multiple times in advance. By comparison, an abnormality of the device is detected.

(c1)如圖18所示般,於接合頭41之Y方向驅動時,測定X方向之加速度訊號(Ax)及Y方向之加速度訊號(Ay)。(c1) As shown in FIG. 18, when the joint head 41 is driven in the Y direction, the acceleration signal (Ax) in the X direction and the acceleration signal (Ay) in the Y direction are measured.

(c2)動作異常診斷部214係從測定到的加速度訊號(Ay)和指令加速度波形之差量,抽出接合頭41之振動成分之波形,求出Y方向之振動位移。同樣,求出接合頭41之Y方向驅動時之X方向之振動位移。(c2) The abnormal operation diagnosis unit 214 extracts the waveform of the vibration component of the joint head 41 from the difference between the measured acceleration signal (Ay) and the commanded acceleration waveform, and obtains the vibration displacement in the Y direction. Similarly, the vibration displacement in the X direction when the Y head is driven in the Y direction is obtained.

(c3)動作異常診斷部214係藉由在上述(c2)求出的X方向之振動位移及Y方向之振動位移之振動位移,算出圖13所示之振動位移之合成波形。(c3) The abnormal operation diagnosis unit 214 calculates a composite waveform of the vibration displacement shown in FIG. 13 based on the vibration displacement in the X direction and the vibration displacement in the Y direction obtained in (c2).

(c4)動作異常診斷部214係從接合頭之2軸方向之振動位移之合成波形,求出2軸方向之振動位移之最大位移(MD)。(c4) The abnormal operation diagnosis unit 214 obtains the maximum displacement (MD) of the vibration displacement in the two-axis direction from the combined waveform of the vibration displacement in the two-axis direction of the joint head.

(c5)動作異常診斷部214係事先複數次測定(算出)在上述(c4)求出之接合動作中之振動位移之合成波形相同之波形並予以儲存,與在通常的接合工程中在上述(c3)測定(算出)的振動位移進行比較。(c5) The operation abnormality diagnosis unit 214 measures (calculates) the waveforms of the combined waveforms of the vibration displacements in the joint operation obtained in (c4) above in multiple times in advance and stores the same waveforms as in the above-mentioned ( c3) The vibration displacement measured (calculated) is compared.

(c6)動作異常診斷部214係在通常之接合工程中在上述(c4)測定(算出)之合成波形之2軸方向之最大位移(MD),超過如圖15所示般事先設定的臨界值之情況,對指令波形生成部212輸出異常檢測訊號而使伺服馬達230停止,將接合頭41之動作異常之情形顯示於螢幕83a。(c6) The abnormal movement diagnosis unit 214 is the maximum displacement (MD) in the two-axis direction of the composite waveform measured (calculated) in (c4) above during normal joining process, and exceeds the threshold set in advance as shown in FIG. 15 In this case, an abnormality detection signal is output to the command waveform generation unit 212 to stop the servo motor 230, and the abnormality of the operation of the joint head 41 is displayed on the screen 83a.

(c7)異常檢測時,動作異常診斷部214以各分割成X方向、Y方向的動作波形進行異常原因之特定。(c7) At the time of abnormality detection, the abnormality diagnosis unit 214 specifies the cause of the abnormality by using the operation waveforms divided into the X direction and the Y direction.

(變形例3)
圖19為表示與變形例3有關之異常判斷方法的圖示。為了在圖19中,容易圖示,表示接合頭41之Y方向驅動時之X方向振動位移和Y方向振動位移之合成波形。
(Modification 3)
FIG. 19 is a diagram showing an abnormality determination method related to Modification 3. FIG. For ease of illustration in FIG. 19, a composite waveform of the X-direction vibration displacement and the Y-direction vibration displacement when the Y head is driven in the Y direction is shown.

在實施例及變形例1、2中,雖然相對於合成波形之最大位移,持有單一的臨界值而進行異常診斷,但是即使為從複數次測定到的標準性的XYZ方向振動位移之軌跡及X軸Y軸Z軸旋轉方向振動位移之軌跡,分離一定距離之情況,判斷異常之方法亦可。在該方法中,無須從合成波形求出最大位移。當將此適用於實施例時,如同下述般。另外,變形例3也可以適用於變形例1、2。In Examples and Modifications 1 and 2, although a single critical value is used to diagnose the abnormality with respect to the maximum displacement of the synthesized waveform, the trajectory of the standard XYZ-direction vibration displacement measured from multiple times and The trajectory of the vibration displacement of the X-axis, Y-axis, and Z-axis rotation directions can be separated by a certain distance, and a method of judging an abnormality is also possible. In this method, it is not necessary to find the maximum displacement from the synthesized waveform. When this is applied to the examples, it is as follows. In addition, the modification 3 can also be applied to the modifications 1 and 2.

(d1)動作異常診斷部214進行與實施例之(a1)相同的處理。(d1) The operation abnormality diagnosing unit 214 performs the same processing as that of (a1) of the embodiment.

(d2)動作異常診斷部214進行與實施例之(a2)相同的處理。(d2) The abnormal operation diagnosis unit 214 performs the same processing as that of the embodiment (a2).

(d3)動作異常診斷部214進行與實施例之(a3)相同的處理。(d3) The operation abnormality diagnosis unit 214 performs the same processing as that of (a3) in the embodiment.

(d4)動作異常診斷部214係事先複數次測定(算出)在上述(d2)求出之接合動作中之振動位移之合成波形相同之波形並予以儲存,與在通常的接合工程中在上述(d2)測定(算出)的振動位移進行比較。(d4) The operation abnormality diagnosis unit 214 measures (calculates) the waveforms of the combined waveforms of the vibration displacements in the joining operation obtained in (d2) above in advance (several times) and stores the same waveforms as in the above-mentioned ( d2) The vibration displacement measured (calculated) is compared.

(d5)動作異常診斷部214係在通常之接合工程中在上述(d4)測定(算出)之合成波形,超過如圖19所示般事先設定的臨界值之情況,對指令波形生成部212輸出異常檢測訊號而使伺服馬達230停止,將接合頭41之動作異常之情形顯示於螢幕83a。(d5) Operation abnormality diagnosis unit 214 is a composite waveform that is measured (calculated) in (d4) above during a normal joining process and exceeds a threshold value set in advance as shown in FIG. 19, and is output to the command waveform generation unit 212. The abnormality detection signal stops the servo motor 230, and displays the abnormality of the operation of the joint head 41 on the screen 83a.

以上,雖然根據實施型態、實施例及變形例對本發明者所創作岀之發明進行具體性說明,但是本發明並不限定於上述實施型態、實施例及變形例,當然可以做各種變更。
例如,在實施例中,雖然針對將接合頭施予Y軸驅動之情況進行說明,但是即使施予Z軸驅動之情況也適用。
再者,在實施例中,雖然說明在接合頭設置陀螺儀感測器之例,但是並非限定於此,即使在拾取頭設置陀螺儀亦可。
再者,在實施例中,雖然求出振動之位移而進行異常診斷,但是不僅振動之位移,即使以傅立葉轉換等特定頻率成分,對過去的動作,比較每頻率的振動位準而進行異常診斷亦可。
再者,即使在接合頭台、拾取頭台(X、Y、Z驅動部)之接合裝置架台安裝部設置陀螺儀感測器,取得各頭部之動作所致的振動資料以外之振動資料,使用各頭部之資料的差量而進行異常診斷亦可。
再者,即使將各頭部之靜止中之振動資料作為基準資料亦可。依此,能夠僅以根據各頭部之動作的資料進行解析,可以進行更高精度的異常診斷。
再者,即使在基板辨識攝影機、平台辨識攝影機、晶圓辨識攝影機設置陀螺儀感測器,進行產生接合精度異常之情況的異常原因為頭部之動作或攝影機惻之異常的診斷。
再者,雖然在實施例中分別各具備一個拾取頭及接合頭,但是即使各為兩個以上亦可。再者,在實施例中,雖然具備中間平台,但是即使無中間平台亦可。在此情況,即使兼用拾取頭和接合頭亦可。
再者,在實施例中,雖然使晶粒之表面朝上而被接合,但是即使拾取晶粒後使晶粒之表背反轉,使晶粒之背面朝向而接合亦可。在此情況,即使不設置中間平台亦可。該裝置稱為倒裝晶片接合器。
As mentioned above, although the invention created by the present inventors has been specifically described based on the implementation modes, examples, and modification examples, the present invention is not limited to the above implementation modes, examples, and modification examples, and various changes can be made.
For example, in the embodiment, the case where the joint head is applied to the Y-axis drive has been described, but the case where the joint head is applied to the Z-axis drive is also applicable.
In the embodiment, an example in which a gyro sensor is provided in the bonding head is described, but the invention is not limited to this, and a gyro may be provided in the pickup head.
Furthermore, in the embodiment, although the displacement of the vibration is obtained for abnormality diagnosis, not only the displacement of the vibration, but also specific frequency components such as Fourier transform, the past operation is compared with the vibration level of each frequency to perform abnormality diagnosis. Yes.
Furthermore, even if a gyro sensor is installed in the mounting device mounting portion of the bonding head stage and the picking head stage (X, Y, Z driving unit), vibration data other than the vibration data caused by the movement of each head is obtained. An abnormality diagnosis may be performed using the difference between the data of each head.
Furthermore, the vibration data in the stationary state of each head may be used as the reference data. In this way, analysis can be performed using only data based on the movements of the heads, and a more accurate abnormality diagnosis can be performed.
Furthermore, even if a gyro sensor is installed in the substrate recognition camera, the platform recognition camera, and the wafer recognition camera, the abnormality that causes the abnormality of the joint accuracy is diagnosed as the movement of the head or the abnormality of the camera.
In addition, in the embodiment, each of the pickup head and the bonding head is provided, but two or more of them may be used. Furthermore, in the embodiment, although an intermediate platform is provided, it may be used even if there is no intermediate platform. In this case, a pickup head and a bonding head may be used in combination.
Furthermore, in the embodiment, although the surfaces of the crystal grains are bonded to face up, even if the surface of the crystal grains is reversed after picking up the crystal grains, the back surface of the crystal grains may be oriented to be bonded. In this case, it is not necessary to provide an intermediate platform. This device is called a flip chip bonder.

10‧‧‧晶粒接合器10‧‧‧ Die Bonder

1‧‧‧晶粒供給部 1‧‧‧Crystal Supply Department

11‧‧‧晶圓 11‧‧‧ wafer

13‧‧‧上推單元 13‧‧‧ Push-up unit

2‧‧‧拾取部 2‧‧‧Pick up department

21‧‧‧拾取頭 21‧‧‧Pickup head

3‧‧‧中間平台部 3‧‧‧Middle Platform Department

31‧‧‧中間平台 31‧‧‧ intermediate platform

4‧‧‧接合部 4‧‧‧ Junction

41‧‧‧接合頭 41‧‧‧Joint head

8‧‧‧控制部 8‧‧‧Control Department

83e‧‧‧馬達控制裝置 83e‧‧‧Motor control device

210‧‧‧動作控制器 210‧‧‧ Motion Controller

211‧‧‧理想波形生成部 211‧‧‧ideal waveform generator

212‧‧‧指令波形生成部 212‧‧‧Command waveform generation unit

213‧‧‧DAC 213‧‧‧DAC

214‧‧‧動作異常診斷部 214‧‧‧Operation abnormality diagnosis department

220‧‧‧伺服放大器 220‧‧‧Servo amplifier

221‧‧‧速度迴路控制部 221‧‧‧Speed loop control section

230‧‧‧伺服馬達 230‧‧‧Servo motor

D‧‧‧晶粒 D‧‧‧ Grain

S‧‧‧基板 S‧‧‧ substrate

圖1為表示與實施例有關之晶粒接合器之構成的概略上視圖。FIG. 1 is a schematic top view showing the configuration of a die bonder according to the embodiment.

圖2為說明圖1之晶粒接合器之概略構成和其動作之圖示。 FIG. 2 is a diagram illustrating a schematic configuration and operation of the die bonder of FIG. 1. FIG.

圖3為說明圖1之晶粒接合器之控制系統之概略構成的方塊圖。 FIG. 3 is a block diagram illustrating a schematic configuration of a control system of the die bonder of FIG. 1. FIG.

圖4為用以說明圖3之馬達控制裝置之基本的原理之方塊構成圖。 FIG. 4 is a block diagram illustrating the basic principle of the motor control device of FIG. 3. FIG.

圖5為說明陀螺儀感測器之角速度及加速度之檢測方向的圖示。 FIG. 5 is a diagram illustrating the detection directions of the angular velocity and acceleration of the gyro sensor.

圖6為陀螺儀感測器之安裝位置的圖示。 FIG. 6 is a diagram illustrating a mounting position of the gyro sensor.

圖7為說明接合頭之X軸旋轉方向之振動的圖示。 FIG. 7 is a diagram illustrating vibration in the X-axis rotation direction of the joint head.

圖8為說明接合頭之驅動方向及Z軸角速度的圖示。 FIG. 8 is a diagram illustrating the driving direction and the Z-axis angular velocity of the joint head.

圖9為圖8之狀態中之角速度波形及旋轉角度的圖示。 FIG. 9 is an illustration of an angular velocity waveform and a rotation angle in the state of FIG. 8.

圖10為說明接合頭之驅動方向及Y方向加速度的圖示。 FIG. 10 is a diagram illustrating the driving direction and the Y-direction acceleration of the joint head.

圖11為圖10之狀態中之加速度波形、加速度指令波形及差量加速度的圖示。 FIG. 11 is a diagram showing acceleration waveforms, acceleration command waveforms, and differential accelerations in the state of FIG. 10.

圖12為說明差量速度及位移的圖示。 FIG. 12 is a diagram illustrating differential velocity and displacement.

圖13係說明接合頭之Y方向驅動時之X方向之振動位移和Y方向之振動位移之合成波形的圖示。 FIG. 13 is a diagram illustrating a composite waveform of the vibration displacement in the X direction and the vibration displacement in the Y direction when the joint head is driven in the Y direction.

圖14為說明3軸方向之最大位移和3軸旋轉方向之最大位移之例的圖示。 FIG. 14 is a diagram illustrating an example of the maximum displacement in the three-axis direction and the maximum displacement in the three-axis rotation direction.

圖15為說明振動位儀之偏差和臨界值的圖示。 FIG. 15 is a diagram illustrating deviations and critical values of the vibration level meter.

圖16為說明半導體裝置之製造方法的流程圖。 FIG. 16 is a flowchart illustrating a method of manufacturing a semiconductor device.

圖17為圖10之狀態中之加速度波形、速度及位置的圖示。 FIG. 17 is a diagram showing acceleration waveforms, speeds, and positions in the state of FIG. 10.

圖18為說明與變形例2有關之陀螺儀感測器之安裝位置的圖示。 FIG. 18 is a diagram illustrating a mounting position of a gyro sensor according to Modification 2. FIG.

圖19為說明與變形例3有關之異常判斷方法的圖示。 FIG. 19 is a diagram illustrating an abnormality determination method related to Modification 3. FIG.

Claims (14)

一種晶粒接合裝置,具有: 晶粒供給部; 基板供給部; 接合部,其係將從上述晶粒供給部被供給之晶粒接合至從上述基板供給部被供給之基板或已被接合於上述基板之晶粒上;及 控制部,其係控制晶粒供給部和基板供給部和接合部, 上述接合部具備: 接合頭,其具備吸附上述晶粒之夾頭;驅動部,其具備移動上述接合頭之驅動軸;及感測器,其能夠檢測出上述接合頭之角速度及加速度, 上述控制部係使用藉由上述感測器所取得的結果,比較振動位移和事先設定的振動位移之臨界值而判斷異常。A die bonding device having: Die supply department Substrate supply unit A bonding portion that bonds the crystals supplied from the crystal supply portion to a substrate that is supplied from the substrate supply portion or a crystal that has been bonded to the substrate; and The control part controls the die supply part, the substrate supply part, and the bonding part. The joint portion includes: A bonding head including a chuck for adsorbing the crystal grains; a driving section including a driving shaft for moving the bonding head; and a sensor capable of detecting the angular velocity and acceleration of the bonding head, The control unit uses the result obtained by the sensor to compare the vibration displacement with a threshold value of a predetermined vibration displacement to determine an abnormality. 如請求項1所記載之晶粒接合裝置,其中 上述感測器被設置在接近於接合頭驅動之X方向、Y方向、Z方向之驅動軸之交點的接合頭中心附近, 上述控制部係 (a)接合頭動作中,係由從上述感測器所取得的角速度,抽出上述接合頭之旋轉方向之振動波形,並且 (b)由從上述感測器所取得的加速度波形和馬達指令加速度波形之差量,抽出上述接合頭之振動波形, (c)藉由比較從上述抽出之振動波形算出的振動的位移,和根據事先複數次測定並予以儲存的振動之位移而被設定的臨界值,確認在現在的接合頭動作之振動是否有變化而判斷裝置之異常。The die bonding device according to claim 1, wherein The sensor is disposed near the center of the bonding head close to the intersection of the driving axes of the X, Y, and Z directions of the bonding head driving. The above control department (a) During the operation of the joint head, the vibration waveform in the rotation direction of the joint head is extracted from the angular velocity obtained from the sensor, and (b) extracting the vibration waveform of the joint head from the difference between the acceleration waveform obtained from the sensor and the motor command acceleration waveform, (c) By comparing the displacement of the vibration calculated from the vibration waveform extracted above and the threshold value set based on the displacement of the vibration measured and stored in advance several times in advance, it is confirmed whether there is a change in the vibration of the current joint head operation. And judge the abnormality of the device. 如請求項1所記載之晶粒接合裝置,其中 上述感測器被設置在接近於上述接合頭驅動之X方向、Y方向、Z方向之驅動軸之交點的接合頭中心附近, 上述控制部係 (a)接合頭動作中,由從上述感測器所取得的角速度,抽出上述接合頭之旋轉方向之振動波形,並且根據從上述感測器所取得的加速度波形,算出上述接合頭之動作軌跡, (b)從上述接合頭之動作軌跡和馬達指令位置波形之差量,抽出上述接合頭之振動波形, (c)藉由比較從上述抽出之振動波形算出的振動的位移,和根據事先複數次測定並予以儲存的振動之位移而被設定的臨界值,確認在現在的接合頭動作之振動是否有變化而判斷裝置之異常。The die bonding device according to claim 1, wherein The sensor is disposed near the center of the bonding head close to the intersection of the driving axes of the X, Y, and Z directions of the bonding head driving, The above control department (a) During the operation of the joint head, the vibration waveform of the rotation direction of the joint head is extracted from the angular velocity obtained from the sensor, and the trajectory of the joint head is calculated based on the acceleration waveform obtained from the sensor. , (b) extracting the vibration waveform of the joint head from the difference between the movement track of the joint head and the waveform of the motor command position, (c) By comparing the displacement of the vibration calculated from the vibration waveform extracted above and the threshold value set based on the displacement of the vibration measured and stored in advance several times in advance, it is confirmed whether there is a change in the vibration of the current joint head operation And judge the abnormality of the device. 如請求項1所記載之晶粒接合裝置,其中 上述感測器被設置在安裝上述夾頭之接合頭的下部, 上述控制部係 (a)接合頭動作中,由從上述感測器所取得的加速度波形和馬達指令加速度波形之差量,抽出上述接合頭之振動波形, (b)藉由比較從上述抽出之振動波形算出的振動的位移,和根據事先複數次測定並予以儲存的振動之位移而被設定的臨界值,確認在現在的接合頭動作之振動是否有變化而判斷裝置之異常。The die bonding device according to claim 1, wherein The sensor is disposed below a joint head to which the chuck is mounted, The above control department (a) During the joint head operation, the vibration waveform of the joint head is extracted from the difference between the acceleration waveform obtained from the sensor and the motor command acceleration waveform. (b) By comparing the displacement of the vibration calculated from the vibration waveform extracted above and the threshold value set based on the displacement of the vibration measured and stored in advance several times in advance, it is confirmed whether there is a change in the vibration of the present joint head operation And judge the abnormality of the device. 如請求項1所記載之晶粒接合裝置,其中 進一步具備拾取部, 上述拾取部具備: 拾取頭,其具備吸附上述晶粒的夾頭; 驅動部,其具備移動上述拾取頭的驅動軸;及 第二感測器,其係能夠檢測出上述拾取頭之角速度及加速度, 上述控制部係使用藉由上述第二感測器所取得的結果,比較振動位移和事先設定的振動位移之臨界值而判斷異常。The die bonding device according to claim 1, wherein Further equipped with a pickup section, The picking unit includes: A pick-up head having a chuck for adsorbing the crystal grains; A drive unit including a drive shaft that moves the pickup head; and A second sensor capable of detecting the angular velocity and acceleration of the pickup head, The control unit uses the result obtained by the second sensor to compare the vibration displacement with a threshold value of a predetermined vibration displacement to determine an abnormality. 如請求項2所記載之晶粒接合裝置,其中 上述感測器測定 X軸旋轉方向、Y軸旋轉方向及Z軸旋轉方向之角速度;和 X方向、Y方向及Z方向之加速度, 上述控制部係 (a1)分別對上述測定到的X軸旋轉方向之角速度訊號、Y軸旋轉方向之角速度訊號及Z軸旋轉方向之角速度訊號進行積分,算出X軸旋轉方向之振動位移、Y軸旋轉方向之振動位移及Z軸旋轉方向之振動位移, (b1)從上述測定到的X方向、Y方向及Z方向之加速度波形和指令加速度波形之差量,抽出振動成分之波形,算出X方向之振動位移、Y方向之振動位移及Z方向之振動位移, (c1)算出合成上述算出的X軸旋轉方向之振動位移、Y軸旋轉方向之振動位移及Z軸旋轉方向之振動位移的第一合成波形,和合成上述算出的X方向之振動位移、Y方向之振動位移及Z方向之振動位移的第二合成波形, (c2)從上述第一合成波形算出上述X軸旋轉方向之振動位移、Y軸旋轉方向之振動位移及Z軸旋轉方向之振動位移的第一最大位移,從上述第二合成波形算出上述X方向之振動位移、Y方向之振動位移及Z方向之振動位移的第二最大位移, (c3)比較上述第一最大位移和根據事先複數次測定並予以儲存的最大位移而設定的臨界值,比較上述第二最大位移和根據事先複數次測定並予以儲存的最大位移而被設定的臨界值。The die bonding device according to claim 2, wherein The above sensor measurement Angular velocity in the X-axis rotation direction, the Y-axis rotation direction, and the Z-axis rotation direction; and Acceleration in X, Y and Z directions, The above control department (a1) Integrate the measured angular velocity signals in the X-axis rotation direction, the angular velocity signals in the Y-axis rotation direction, and the angular velocity signals in the Z-axis rotation direction, respectively, to calculate the vibration displacement in the X-axis rotation direction and the vibration in the Y-axis rotation direction. Displacement and vibration displacement in the Z-axis rotation direction, (b1) Calculate the vibration displacement in the X direction, the vibration displacement in the Y direction, and the vibration in the Z direction from the difference between the acceleration waveforms in the X, Y, and Z directions and the command acceleration waveform measured above. Displacement, (c1) Calculate and synthesize the first synthetic waveform of the X-axis rotation displacement, the Y-axis rotation displacement, and the Z-axis rotation displacement in the X-axis rotation direction and the Y-direction vibration displacement and Y direction. The second composite waveform of vibration displacement and vibration displacement in the Z direction, (c2) The first maximum displacement of the vibration displacement in the X-axis rotation direction, the vibration displacement in the Y-axis rotation direction, and the vibration displacement in the Z-axis rotation direction is calculated from the first synthesized waveform, and the X direction is calculated from the second synthesized waveform. The second largest displacement of the vibration displacement of the vibration displacement in the Y direction and the vibration displacement in the Z direction, (c3) Comparing the first maximum displacement and the threshold set based on the maximum displacement measured and stored in advance, and comparing the second maximum displacement and the threshold set based on the maximum displacement measured and stored in advance value. 如請求項3所記載之晶粒接合裝置,其中 上述感測器測定 X軸旋轉方向、Y軸旋轉方向及Z軸旋轉方向之角速度;和 X方向、Y方向及Z方向之加速度, 上述控制部係 (a1)分別對上述測定到的X軸旋轉方向之角速度訊號、Y軸旋轉方向之角速度訊號及Z軸旋轉方向之角速度訊號進行積分,算出X軸旋轉方向之振動位移、Y軸旋轉方向之振動位移及Z軸旋轉方向之振動位移, (b1)對上述測定到的X方向、Y方向及Z方向之加速度波形進行積分,算出X方向、Y方向及Z方向之動作軌跡, (b2)從上述算出到的X方向、Y方向及Z方向之動作軌跡和指令位置波形之差量,抽出振動成分之波形,算出X方向之振動位移、Y方向之振動位移及Z方向之振動位移, (c1)算出合成上述算出的X軸旋轉方向之振動位移、Y軸旋轉方向之振動位移及Z軸旋轉方向之振動位移的第一合成波形,和合成上述算出的X方向之振動位移、Y方向之振動位移及Z方向之振動位移的第二合成波形, (c2)從上述第一合成波形算出上述X軸旋轉方向之振動位移、Y軸旋轉方向之振動位移及Z軸旋轉方向之振動位移的第一最大位移,從上述第二合成波形算出上述X方向之振動位移、Y方向之振動位移及Z方向之振動位移的第二最大位移, (c3)比較上述第一最大位移和根據事先複數次測定並予以儲存的最大位移而設定的臨界值,比較上述第二最大位移和根據事先複數次測定並予以儲存的最大位移而被設定的臨界值。A die bonding device as described in claim 3, wherein The above sensor measurement Angular velocity in the X-axis rotation direction, the Y-axis rotation direction, and the Z-axis rotation direction; and Acceleration in X, Y and Z directions, The above control department (a1) Integrate the measured angular velocity signals in the X-axis rotation direction, the angular velocity signals in the Y-axis rotation direction, and the angular velocity signals in the Z-axis rotation direction, respectively, to calculate the vibration displacement in the X-axis rotation direction and the vibration in the Y-axis rotation direction. Displacement and vibration displacement in the Z-axis rotation direction, (b1) Integrate the acceleration waveforms measured in the X, Y, and Z directions, and calculate the movement trajectories in the X, Y, and Z directions. (b2) From the calculated differences between the X, Y, and Z movement trajectories and the command position waveforms, extract the waveform of the vibration component to calculate the X displacement, Y displacement, and Z displacement. Displacement, (c1) Calculate and synthesize the first synthetic waveform of the X-axis rotation displacement, the Y-axis rotation displacement, and the Z-axis rotation displacement in the X-axis rotation direction and the Y-direction vibration displacement and Y direction. The second composite waveform of vibration displacement and vibration displacement in the Z direction, (c2) The first maximum displacement of the vibration displacement in the X-axis rotation direction, the vibration displacement in the Y-axis rotation direction, and the vibration displacement in the Z-axis rotation direction is calculated from the first synthesized waveform, and the X direction is calculated from the second synthesized waveform. The second largest displacement of the vibration displacement of the vibration displacement in the Y direction and the vibration displacement in the Z direction, (c3) Comparing the first maximum displacement and the threshold set based on the maximum displacement measured and stored in advance, and comparing the second maximum displacement and the threshold set based on the maximum displacement measured and stored in advance value. 如請求項4所記載之晶粒接合裝置,其中 上述感測器測定 X軸旋轉方向、Y軸旋轉方向及Z軸旋轉方向之角速度;和 X方向、Y方向及Z方向之加速度, 上述控制部係 (b1)從上述測定到的X方向、Y方向之加速度波形和指令加速度波形之差量,抽出振動成分之波形,算出X方向之振動位移及Y方向之振動位移, (c1)算出合成上述算出的X方向之振動位移及Y方向之振動位移的合成波形, (c2)從上述合成波形算出上述X方向之振動位移及Y方向之振動位移之最大位移, (c3)比較上述最大位移和根據事先複數次測定並予以儲存的最大位移而被設定的臨界值。The die-bonding device according to claim 4, wherein The above sensor measurement Angular velocity in the X-axis rotation direction, the Y-axis rotation direction, and the Z-axis rotation direction; and Acceleration in X, Y and Z directions, The above control department (b1) Calculate the vibration displacement in the X direction and the vibration displacement in the Y direction from the difference between the acceleration waveforms in the X and Y directions and the command acceleration waveform measured above. (c1) Calculate the combined waveform of the X-direction vibration displacement and the Y-direction vibration displacement. (c2) Calculate the maximum displacement of the vibration displacement in the X direction and the vibration displacement in the Y direction from the synthesized waveform, (c3) The above-mentioned maximum displacement is compared with a threshold value set based on the maximum displacement measured and stored in advance several times in advance. 如請求項2所記載之晶粒接合裝置,其中 上述感測器測定 X軸旋轉方向、Y軸旋轉方向及Z軸旋轉方向之角速度;和 X方向、Y方向及Z方向之加速度, 上述控制部係 (a1)分別對上述測定到的X軸旋轉方向之角速度訊號、Y軸旋轉方向之角速度訊號及Z軸旋轉方向之角速度訊號進行積分,算出X軸旋轉方向之振動位移、Y軸旋轉方向之振動位移及Z軸旋轉方向之振動位移, (b1)從上述測定到的X方向、Y方向及Z方向之加速度波形和指令加速度波形之差量,抽出振動成分之波形,算出X方向之振動位移、Y方向之振動位移及Z方向之振動位移, (c1)算出合成上述算出的X軸旋轉方向之振動位移、Y軸旋轉方向之振動位移及Z軸旋轉方向之振動位移的第一合成波形,和合成上述算出的X方向之振動位移、Y方向之振動位移及Z方向之振動位移的第二合成波形, (c2)比較上述第一合成波形和根據事先複數次測定並予以儲存的合成波形而設定的臨界值,比較上述第二合成波形和根據事先複數次測定並予以儲存的合成波形而被設定的臨界值。The die bonding device according to claim 2, wherein The above sensor measurement Angular velocity in the X-axis rotation direction, the Y-axis rotation direction, and the Z-axis rotation direction; and Acceleration in X, Y and Z directions, The above control department (a1) Integrate the measured angular velocity signals in the X-axis rotation direction, the angular velocity signals in the Y-axis rotation direction, and the angular velocity signals in the Z-axis rotation direction, respectively, to calculate the vibration displacement in the X-axis rotation direction and the vibration in the Y-axis rotation direction. Displacement and vibration displacement in the Z-axis rotation direction, (b1) Calculate the vibration displacement in the X direction, the vibration displacement in the Y direction, and the vibration in the Z direction from the difference between the acceleration waveforms in the X, Y, and Z directions and the command acceleration waveform measured above. Displacement, (c1) Calculate and synthesize the first synthetic waveform of the X-axis rotation displacement, the Y-axis rotation displacement, and the Z-axis rotation displacement in the X-axis rotation direction and the Y-direction vibration displacement and Y direction. The second composite waveform of vibration displacement and vibration displacement in the Z direction, (c2) Comparing the first synthetic waveform with a threshold set based on a composite waveform measured and stored in advance, and comparing the second synthetic waveform with a threshold set based on a composite waveform measured and stored in advance. value. 如請求項3所記載之晶粒接合裝置,其中 上述感測器測定 X軸旋轉方向、Y軸旋轉方向及Z軸旋轉方向之角速度;和 X方向、Y方向及Z方向之加速度, 上述控制部係 (a1)分別對上述測定到的X軸旋轉方向之角速度訊號、Y軸旋轉方向之角速度訊號及Z軸旋轉方向之角速度訊號進行積分,算出X軸旋轉方向之振動位移、Y軸旋轉方向之振動位移及Z軸旋轉方向之振動位移, (b1)對上述測定到的X方向、Y方向及Z方向之加速度波形進行積分,算出X方向、Y方向及Z方向之動作軌跡, (b2)從上述算出的X方向、Y方向及Z方向之動作軌跡和指令位置波形之差量,抽出振動成分之波形,算出X方向之振動位移、Y方向之振動位移及Z方向之振動位移, (c1)算出合成上述算出的X軸旋轉方向之振動位移、Y軸旋轉方向之振動位移及Z軸旋轉方向之振動位移的第一合成波形,和合成上述算出的X方向之振動位移、Y方向之振動位移及Z方向之振動位移的第二合成波形, (c2)比較上述第一合成波形和根據事先複數次測定並予以儲存的合成波形而設定的臨界值,比較上述第二合成波形和根據事先複數次測定並予以儲存的合成波形而被設定的臨界值。A die bonding device as described in claim 3, wherein The above sensor measurement Angular velocity in the X-axis rotation direction, the Y-axis rotation direction, and the Z-axis rotation direction; and Acceleration in X, Y and Z directions, The above control department (a1) Integrate the measured angular velocity signals in the X-axis rotation direction, the angular velocity signals in the Y-axis rotation direction, and the angular velocity signals in the Z-axis rotation direction, respectively, to calculate the vibration displacement in the X-axis rotation direction and the vibration in the Y-axis rotation direction. Displacement and vibration displacement in the Z-axis rotation direction, (b1) Integrate the acceleration waveforms measured in the X, Y, and Z directions, and calculate the movement trajectories in the X, Y, and Z directions. (b2) Extract the waveform of the vibration component from the difference between the X, Y, and Z movement trajectories and the command position waveforms calculated above, and calculate the X displacement, Y displacement, and Z displacement. , (c1) Calculate and synthesize the first synthetic waveform of the X-axis rotation displacement, the Y-axis rotation displacement, and the Z-axis rotation displacement in the X-axis rotation direction and the Y-direction vibration displacement and Y direction. The second composite waveform of vibration displacement and vibration displacement in the Z direction, (c2) Comparing the first synthetic waveform with a threshold set based on a composite waveform measured and stored in advance, and comparing the second synthetic waveform with a threshold set based on a composite waveform measured and stored in advance. value. 如請求項4所記載之晶粒接合裝置,其中 上述感測器測定 X軸旋轉方向、Y軸旋轉方向及Z軸旋轉方向之角速度;和 X方向、Y方向及Z方向之加速度, 上述控制部係 (b1)從上述測定到的X方向、Y方向之加速度波形和指令加速度波形之差量,抽出振動成分之波形,算出X方向之振動位移及Y方向之振動位移, (c1)算出合成上述算出的X方向之振動位移及Y方向之振動位移的合成波形, (c2)比較上述合成波形和根據事先複數次測定並予以儲存的合成波形而被設定的臨界值。The die-bonding device according to claim 4, wherein The above sensor measurement Angular velocity in the X-axis rotation direction, the Y-axis rotation direction, and the Z-axis rotation direction; and Acceleration in X, Y and Z directions, The above control department (b1) Calculate the vibration displacement in the X direction and the vibration displacement in the Y direction from the difference between the acceleration waveforms in the X and Y directions and the command acceleration waveform measured above. (c1) Calculate the combined waveform of the X-direction vibration displacement and the Y-direction vibration displacement. (c2) The above-mentioned synthesized waveform is compared with a threshold value set based on the synthesized waveform measured and stored in advance plural times in advance. 一種半導體裝置之製造方法,具備: (a)準備請求項1至11中之任一項的晶粒接合裝置的工程; (b)搬入保持貼附晶粒之切割膠帶的晶圓環保持器之工程; (d)準備搬入基板之工程; (d)拾取晶粒之工程; (e)將上述拾取到的晶粒接合於上述基板或已被接合之晶粒上的工程;及 (f)使用根據上述感測器的測定結果而進行異常準診斷的工程, 上述(f)工程係與上述(e)工程並行而根據上述感測器之測定結果而檢測出上述接合頭之動作之振動有無異常。A method for manufacturing a semiconductor device includes: (a) the preparation of the die bonding device of any one of claims 1 to 11; (b) the process of moving into a wafer ring holder that holds dicing tape with die attached; (d) engineering to move into the substrate; (d) the process of picking up grains; (e) the process of bonding the picked-up grains to the above-mentioned substrate or the bonded grains; and (f) a process for performing a quasi-diagnosis of an abnormality based on a measurement result of the sensor, The (f) process is performed in parallel with the (e) process, and the presence or absence of abnormal vibrations in the operation of the joint head is detected based on the measurement results of the sensor. 如請求項12所記載之半導體裝置之製造方法,其中 上述(d)工程係以上述接合頭拾取上述切割膠帶上之晶粒, 上述(e)工程係以上述接合頭將上述拾取到的晶粒接合於上述基板或已被接合之晶粒上。The method for manufacturing a semiconductor device according to claim 12, wherein The above (d) process is to pick up the crystal grains on the dicing tape with the bonding head, The (e) process is to use the bonding head to bond the picked-up crystal grains to the substrate or the crystal grains that have been bonded. 如請求項12所記載之半導體裝置之製造方法,其中 上述(d)工程具備: (d1)以拾取頭拾取上述切割膠帶上之晶粒的工程; (d2)將以上述拾取頭拾取到的晶粒載置於中間平台的工程, 上述(e)工程具備: (e1)以接合頭拾取被載置於上述中間平台的晶粒的工程;和 (e2)將以上述接合頭拾取到的晶粒載置於上述基板的工程, 上述(f)工程係與(d2)工程並行而根據第二感測器之測定結果而檢測出上述拾取頭之動作之振動有無異常。The method for manufacturing a semiconductor device according to claim 12, wherein The above (d) project has: (d1) the process of picking up the crystal grains on the cutting tape with a pick-up head; (d2) the process of placing the grains picked up by the picking head on the intermediate platform, The above (e) project has: (e1) a process of picking up a die loaded on the intermediate platform with a bonding head; and (e2) a process of placing the crystal grain picked up by the bonding head on the substrate, The (f) engineering is parallel to the (d2) engineering, and the presence or absence of abnormal vibrations in the operation of the pickup head is detected based on the measurement result of the second sensor.
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