TW201836104A - 使用聯動導電連接組件以形成封裝半導體裝置的方法及結構 - Google Patents
使用聯動導電連接組件以形成封裝半導體裝置的方法及結構 Download PDFInfo
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- TW201836104A TW201836104A TW106119789A TW106119789A TW201836104A TW 201836104 A TW201836104 A TW 201836104A TW 106119789 A TW106119789 A TW 106119789A TW 106119789 A TW106119789 A TW 106119789A TW 201836104 A TW201836104 A TW 201836104A
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- conductive
- frame structure
- lead
- die attach
- attach pad
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Abstract
一種用於形成經封裝的半導體裝置的方法,其包含提供第一導電框架結構。所述方法包含耦合第二導電框架結構至所述第一導電框架結構以提供第一子組件,其中所述第二導電框架結構包含多個互連導電連接結構。所述方法包含藉由囊封層來囊封所述第一子組件以提供囊封子組件。所述方法包含移除所述第一導電框架結構的經結合的導電部份以形成置於所述囊封子組件的側邊表面上的多個導電側翼表面。所述方法包含形成導電層於所述導電側翼表面上。所述方法包含分離所述囊封子組件以提供所述經封裝的半導體裝置,每個經封裝的半導體裝置具有由所述導電層所覆蓋的所述導電側翼表面的部份。
Description
本發明通常相關於電子元件,特別是關於半導體封裝、其之結構以及形成半導體封裝的方法。
在過去,經封裝的功率半導體裝置使用各種製造技術以沉積導電材料於導電引線框架的露出部。在離散功率半導體裝置中,例如離散場效電晶體(FET)半導體裝置或二極體半導體裝置,製造業者使用矩陣引線框架,其通常包含晶粒附接墊的陣列,每個晶粒附接墊具有相鄰配置的多個引線但是所述多個引線與所述晶粒附接墊隔離。半導體晶粒被附接至所述晶粒附接墊並且使用離散的、獨立的或分離的連接結構(例如導線接合互連或夾具)電性地連接至所述引線。此子組件接著被囊封以提供模製封裝本體給每個半導體晶粒。接著,所述囊封子組件被放置在電鍍設備中並且導電材料被電鍍到所述導電引線框架的露出的表面上。在所述電鍍過程中,電流通過導電引線,其減少用以形成薄連續金屬鍍膜於所述導電引線框架的露出的表面上之溶解的金屬陽離子。
過去的方法有一個問題是,為了使電流通過整個導電引線框 架,來自引線框架的相鄰部份的某些引線必須結合在一起。在所述電鍍製程之後,所述個別封裝的半導體裝置接著使用切割製程而被分隔開。所述切割製程分離所述結合的引線從而提供不具有電鍍材料的引線面或側翼(flank)表面。此留下不想要被露出的引線框架材料,其通常是銅。所述露出來的銅不與焊料附著,其產生較弱的焊料結合並且對於經組裝的電子構件的可靠性有不利的影響。
試圖去解決此問題,製造業者在所述結合的引線中鑿孔洞、在所述結合的引線中產生半蝕刻區域或在所述結合的引線中使用側邊溝槽以提供覆蓋有所述電鍍材料之某些側邊表面或側翼表面。雖然這些方案使得引線面的側邊或側翼表面具有大約20%到60%之間的可附著表面覆蓋率,然而這些方案無法提供100%的覆蓋率,並且因此還是產生劣質焊料結合。再者,這些方案無法提供所述組裝電路板層級(assembly board level)所需的足夠堅固的焊料結合保護以滿足嚴格的汽車規格,其需要100%可附著的側覆蓋率。
因此,還是期望能有一種提供經封裝的半導體裝置之方法和結構,其改善所述引線框架的側邊和側翼表面的所述可附著表面覆蓋率。並且也期望所述結構和方法可容易地併入製造流程中並且具有成本效益。
除了其他特徵外,本發明包含一種使用導電框架結構來製造經封裝的半導體的方法,所述導電框架結構具有多個(即至少兩個)一起聯動的導電連接結構。所述聯動的導電連接結構被用來傳導電流到在另一導電框架結構上的導電構件,所述另一導電框架結構具有露出的導電側翼表面 有助於改善所述露出的導電側翼表面中具有可焊材料的覆蓋率。除了其他情況之外,所述方法以及所形成的結構提供經封裝的半導體裝置,其被建構以提供達到100%可附接側翼表面。也就是,所述方法和結構提供實質上覆蓋有可焊材料之露出的側邊或導電側翼表面,其有助於改善用於附接至下一層級的組件(例如印刷電路板)的可濕式附接(wettable)表面。所述方法和結構提供借助於相較於先前方案之較堅固的焊料接合的用於改善的可靠度。所述方法和結構適用於具有露出的側翼或側邊表面的經封裝的半導體裝置以及其他電子裝置,所述側翼或側邊表面經建構用於隨後沉積可焊材料,但是所述方法和結構不限於在所述經封裝的半導體裝置的兩個相對側上具有側翼表面的功率半導體裝置。
特別是在一個實施例中,一種用於形成經封裝的半導體裝置的方法包含提供第一導電框架結構。所述方法包含耦合第二導電框架結構到所述第一導電框架結構以提供第一子組件,其中所述第二導電框架結構包含多個互連導電連接結構。所述方法包含藉由囊封層來囊封所述第一子組件以提供囊封子組件。所述方法包含移除所述第一導電框架結構的經結合的導電部份以形成配置在所述囊封子組件的側邊表面上的多個導電側翼表面。所述方法包含形成導電層在所述導電側翼表面上。所述方法包含分離所述囊封子組件以提供所述經封裝的半導體裝置,每個經封裝的半導體裝置具有藉由所述導電層所覆蓋的所述導電側翼表面的部份。
在另一實施例中,一種製造經封裝的電子裝置的方法包含:提供第一導電框架結構,其包含具有第一導電構件的第一子結構;具有第二導電構件的第二子結構,其中所述第一導電構件是鄰接所述第二導電構 件以提供經結合的導電結構來連接所述第一子結構到所述第二子結構;第一電子晶粒被耦合至所述第一子結構;以及第二電子晶粒被耦合至所述第二子結構。所述方法包含:提供第二導電框架結構,其包含第一導電連接結構以及第二導電連接結構,其中所述第一導電連接結構是實際上互連至所述第二導電連接結構;附接所述第一導電連接結構至所述第一電子晶粒和所述第一導電構件;以及附接所述第二導電連接結構至至少所述第二電子晶粒以形成第一子組件。所述方法包含藉由囊封層來囊封所述第一子組件的部份以形成囊封子組件,其中所述第一導電框架結構的至少部份被曝露於所述囊封子組件的外側。所述方法包含移除所有的所述經結合的導電結構以形成第一導電構件的曝露側邊表面以及第二導電構件的曝露側邊表面。所述方法包含形成導電層於所述第一導電框架結構的所述曝露表面上、於所述第一導電構件的曝露側邊表面上以及於所述第二導電構件的曝露側邊表面上。所述方法包含分離所述囊封子組件以提供第一封裝電子裝置和第二封裝電子裝置,所述第一封裝電子裝置具有藉由所述導電層所覆蓋的所述第一導電構件的曝露側邊表面,所述第二封裝電子裝置具有藉由所述導電層所覆蓋的所述第二導電構件的曝露側邊表面。
在進一步的實施例中,經封裝的半導體裝置包含晶粒附接墊、鄰近所述晶粒附接墊配置之多個引線,每個引線具有引線底表面和引線末端表面。半導體晶粒被連接至所述晶粒附接墊並且導電夾具被附接至所述半導體晶粒和所述多個引線,其中所述導電夾具包含至少一個聯結桿。封裝本體囊封所述半導體晶粒、所述導電夾具、所述多個引線的部份、所述至少一個聯結桿部份的至少部份以及所述晶粒附接墊的至少部份,其 中每個引線末端表面曝露於所述封裝本體的側邊表面上,並且其中所述至少一個聯結桿的末端表面曝露於所述封裝本體的所述外側。導電層被配置在每個引線末端表面上但是沒有被配置在所述至少一個聯結桿的所述末端表面上。
1‧‧‧線
7‧‧‧線
8‧‧‧線
10‧‧‧封裝的半導體裝置
11‧‧‧晶粒附接墊/晶粒墊/支持墊
12‧‧‧引線
16‧‧‧電子晶片/電子晶粒/半導體裝置/半導體晶粒
17‧‧‧晶粒附接材料
18‧‧‧晶粒附接材料
19‧‧‧導電連接結構
23‧‧‧附接層
24‧‧‧焊料附接材料
26‧‧‧導電層
36‧‧‧封裝本體
40‧‧‧導電框架結構
41-44‧‧‧子結構/子框架結構
48‧‧‧主要部份/分接頭部份
49‧‧‧孔洞
51‧‧‧導電框架/框架
53‧‧‧聯結桿
56‧‧‧結合的導電部份
60‧‧‧導電框架結構
61-64‧‧‧子結構/子框架結構
68‧‧‧主要部份/分接頭部份
69‧‧‧孔洞
71‧‧‧導電框架/框架
80‧‧‧子組件
90‧‧‧囊封子組件
110‧‧‧底或下表面
116‧‧‧導電連接結構
121‧‧‧導電側邊表面/導電側翼表面
122‧‧‧下或底表面
191‧‧‧晶粒附接部份
192‧‧‧接合部
194‧‧‧聯結桿
195‧‧‧遠端表面
196‧‧‧側邊
197‧‧‧側邊
200‧‧‧下一層級的組件/印刷電路板
201‧‧‧導電跡線
203‧‧‧第一表面
360‧‧‧囊封層/側邊表面
361‧‧‧側邊表面
362‧‧‧側邊表面
401‧‧‧部份
403‧‧‧分離區域
418‧‧‧額外的附接層
511‧‧‧引線部
圖1圖示根據本發明的實施例的經封裝的半導體裝置的橫截面視圖以及局部透視圖,其中所述橫截面圖沿著圖3A的參考線1-1截取;圖2圖示圖1的所述經封裝的半導體裝置的部份的局部橫截面視圖;圖3A圖示圖1的所述經封裝的半導體裝置的俯視圖,其中所述封裝本體的部份被圖示為局部透明;圖3B圖示圖3A的所述經封裝的半導體裝置的局部放大側視圖;圖4圖示根據本發明的實施例的導電框架結構的俯視圖,所述導電框架結構具有被附接至晶粒附接墊的電子晶粒;圖5圖示根據本發明的實施例的導電框架結構的俯視圖,所述導電框架結構具有互連導電連接結構;圖6圖示圖5的所述導電框架結構被配置以覆蓋圖4的所述導電框架結構的俯視圖,其提供根據本發明的實施例的子組件;圖7圖示圖6的所述子組件沿著參考線7-7所得的橫截面視圖;圖8圖示圖6的所述子組件沿著參考線8-8所得的橫截面視 圖;圖9圖示根據本發明的實施例的進一步處理之後的圖8的所述子組件的橫截面視圖;以及圖10圖示根據本發明的實施例的額外處理之後的圖9的所述子組件的橫截面視圖。
為了說明的簡化及清楚起見,在圖式中的元件並不一定是按照比例繪製的,並且在不同圖中的相同的元件符號是表示相同的元件。此外,為了說明的簡化起見,眾所周知的步驟及元件的說明及細節被省略。如同在此所用的,術語"及/或"是包含相關被表列的項目中的一或多個的任一及所有的組合。此外,在此所用的術語只是為了描述特定實施例之目的而已,因而並不意圖限制本揭露內容。如同在此所用的,除非上下文有清楚相反的指出,否則單數形亦意圖包含複數形。進一步將會理解到的是,當術語"包括及/或包含"用在此說明書時,其指明所述特點、數量、步驟、操作、元件及/或構件的存在,但是並不排除一或多個其它特點、數量、步驟、操作、元件、構件及/或其群組的存在或是添加。將會瞭解到的是,儘管術語"第一、第二、等等"可能在此被使用來描述各種的構件、元件、區域、層及/或區段,但是這些構件、元件、區域、層及/或區段不應該受限於這些術語。這些術語只是被用來區別構件、元件、區域、層及/或區段的彼此而已。因此,例如在以下論述的一第一構件、一第一元件、一第一區域、一第一層及/或一第一區段可被稱為一第二構件、一第二元件、一第二區域、一第二層及/或一第二區段,而不脫離本揭露內容的教示。對於"一個實施例"或是"一實施例"的參照是表示與所述實施例相關地敘述的一特定的特點、 結構或特徵是內含在本發明的至少一實施例中。因此,措辭"在一個實施例中"或是"在一實施例中"在遍及此說明書的各處中的出現並不一定都是參照到相同的實施例,但是在某些情形中其可能是參照到相同的實施例。再者,在一或多個實施例中,所述特定的特點、結構或是特徵可以用對於具有此項技術的通常知識者而言將會是明顯的任何適當的方式來加以組合。此外,術語"當"是表示某一動作是至少在起始的動作的一持續期間的某個部份之內發生的。字詞"大約"、"大致"或是"實質"的使用是表示一元件的一值預期是接近一狀態值或位置。然而,如同在此項技術中眾所週知的,總是有防礙值或是位置不是剛好所述的較小的變異。除非另有指明,否則如同在此所用的字"在…之上"或是"在…上"是包含所指明的元件可以是直接或間接的實體接觸所在的方位、設置或關係。進一步理解的是,在以下所描繪及敘述的實施例適當地可以具有在缺乏未明確地在此揭露的任何元件之下的實施例且/或加以實施。
圖1圖示經封裝的電子裝置10的橫截面視圖和局部透視圖,例如根據第一實施例的經封裝的半導體裝置10,其中所述橫截面視圖是沿著圖3A的參考線1-1所取得的。根據所述實施例,經封裝的半導體裝置10包含晶粒附接墊11、晶粒墊11或支持墊11以及被配置與晶粒附接墊11相鄰但是分隔開的引線12。在一個實施例中,電子晶片16或電子晶粒16,例如半導體裝置16或半導體晶粒16是使用晶粒附接材料17而被連接或是附接至晶粒附接墊11。在某些實施例中,半導體裝置16是功率半導體裝置,例如功率場效電晶體(FET)結構、二極體結構或整流器結構。已了解 的是,電子晶片16可為任何型態的電子裝置。舉例來說,晶粒附接材料17可為焊料膏、導電環氧樹脂、導電黏著劑、導電膜、非導電環氧樹脂、非導電黏著劑、非導電膜或所屬技術領域中具有通常知識者所知道的其他適合的附接材料。在某些實施例中,非導電指的是電性絕緣並且要知道的是這些材料可能依然具有熱傳導性。
經封裝的半導體裝置10進一步包含導電連接結構19,其附接至半導體裝置16的主要表面並且進一步連接一或多個引線12。在一較佳實施例中,導電連接結構19是導電夾式互連結構,其附接至引線12,一般來說如圖3A所示。在其他的實施例中,導電連接結構19附接至單一引線12。在某些實施例中,導電連接結構19主要是由銅所組成,但是其他導電材料亦可被使用。如圖1和3A所示,導電連接結構19包含晶粒附接部份191,其利用晶粒附接材料18而連接到半導體裝置16,所述晶粒附接材料18可為焊料膏、導電環氧樹脂、導電黏著劑、導電膜或所屬技術領域中具有通常知識者所知道的其他適合的附接材料。導電連接結構19進一步包含接合部192,其以一角度向外延伸或延伸背離晶粒附接部份191以放置接合部192於一適當位置中而利用附接層23附接至引線12。舉例來說,附接層23可為焊料膏、導電環氧樹脂、導電黏著劑、導電膜或所屬技術領域中具有通常知識者所知道的其他適合的附接材料。根據所述實施例,導電連接結構19經建構以提供電性互連至引線12用於傳輸電訊號往返於為已完成封裝形式的半導體裝置16;以及當為子組件形式時,在經封裝的半導體裝置16的製造過程中提供用於電鍍目的的電性互連。
經封裝的半導體裝置10進一步包含封裝本體36,其覆蓋或 是囊封導電連接結構19、半導體晶粒16、引線12的至少部份以及晶粒附接墊11的至少部份,而在某些實施例中,留下引線12的下或底表面122、引線12曝露於經封裝的半導體裝置10的外側的導電側邊表面121(亦可稱為導電側翼表面121),如圖1所示。在某些實施例中,封裝本體36可為基於聚合物的複合材料,例如具有填充物的環氧樹脂、具有填充物的環氧壓克力或具有適當填充物的聚合物。封裝本體36包含非導電且環保的材料,其保護半導體晶粒16免於受到外部元件和汙染物的影響。封裝主體36可以利用膏印刷、壓縮模製、轉移模製、雙料射出成型(over-molding)、液體密封劑模製、真空疊層、其它適當的敷料器、或具有此項技術中的技能者已知的其它製程來加以形成。在某些實施例中,封裝主體36是環氧樹脂模製化合物("EMC"),並且可以利用轉移或注入模製技術來加以形成。
根據所述實施例,導電側邊表面121或導電側翼表面121是經由封裝本體36的側邊表面360而曝露,並且進一步由導電層26(諸如可焊層26)所覆蓋。舉例來說,導電層26包含錫並且較佳地是根據所述實施例使用電鍍技術而形成。在某些實施例中,導電層26進一步被配置在引線12的下表面122上以及晶粒附接墊11的底或下表面110上,一般來說如圖1所示。
如下文中將詳細描述的,在經封裝的半導體裝置10與其他封裝半導體裝置的一起製作過程中,例如子組件形式下,導電連接結構19是與其他導電連接結構(例如其他導電連接結構19)互連或聯動在一起,其根據本實施例能夠使導電層26被配置在引線12的所有導電側翼表面121上。特別是,所述互連導電連接結構19能夠使電流流經引線12以促進電鍍過程 中導電層26的形成以提供相較於習知結構或製程所述導電層26的增加的覆蓋率。根據所述實施例,基本上所有的導電側翼表面121都由導電層26所覆蓋。特別是,在某些實施例中,每個導電側翼表面121中有大於60%的表面是由導電層26所覆蓋。在某些實施例中,每個導電側翼表面121中有大於75%的表面是由導電層26所覆蓋。在較佳的實施例中,每個導電側翼表面121是大約100%或全部都由導電層26所覆蓋。
圖2圖示經封裝的半導體裝置10的部份的局部橫截面視圖。參照圖2,經封裝的半導體10的部份是被圖示為附接至下一層級的組件200,例如印刷電路板200,所述印刷電路板具有配置鄰近於第一表面203的導電跡線201。根據所述實施例,引線12的導電側翼表面121實質上是由導電層26所覆蓋,其促進對於焊料附接材料24有大約100%的可濕式附接側翼。相較於習知的方法無法在側翼表面上提供大於60%的可焊材料的覆蓋率,根據本發明實施例,其改善所述焊料結合強度以及組裝構件的可靠度。
圖3A圖示經封裝的半導體裝置10的俯視圖,其中封裝本體36的部份被圖示為局部透明以看到所述裝置的內部部份。根據所述實施例,導電連接結構19進一步包含一個或多個聯結桿194,例如其從導電連接結構19的晶粒附接部份191延伸朝向封裝本體36的側邊表面361和362。在一較佳實施例中,導電連接結構19包含至少兩個聯結桿194分別在導電連接結構19的相對側邊196和197,一般如圖3A所示。在一個實施例中,聯結桿194經建構以互連、物理性連接或一起聯動導電連接結構19與根據所述實施例的其他導電連接結構(例如其他導電連接結構19)。在一個實施例 中,導電連接結構116(例如導線接合)電性地連接在半導體裝置16上的其他墊部份到引線12,一般如圖3A所示。
圖3B是經封裝的半導體裝置10的局部放大側視圖,其描繪封裝本體36的側邊表面362的一部份,其中聯結桿194的遠端表面195是經由封裝本體36所曝露。根據所述實施例,遠端表面195是缺乏導電材料26,因為聯結桿194是在導電層26形成之後才被分離或單一化。
現在參考圖4-10,將描述一種用於形成含有經封裝的半導體裝置10的封裝電子裝置或封裝半導體裝置的方法。圖4圖示根據第一實施例的具有附接到晶粒附接墊11之電子晶粒16(例如半導體晶粒)的導電框架結構40的俯視圖。在製造的早先步驟中,導電框架結構40設有多個子結構41、42、43和44或是子框架結構41、42、43和44。在一個實施例中,導電框架結構40可被提供為NxM陣列的子結構,包含如圖4中所示的2x2陣列。在某些實施例中,每個子結構可包含附接至導電框架51或框架51的晶粒附接墊11,框架51是與晶粒附接墊11分隔開並且圍繞晶粒附接墊11。在某些實施例中,每個框架51可具有方形並且晶粒附接墊11可藉由一個或多個聯結桿53及/或引線部511而被附接至框架51。引線12是被配置為與晶粒附接墊11分隔開但是鄰近於晶粒附接墊11並且引線12可在距晶粒附接墊11遠端之末端處被附接至框架51,一般如圖4所示。
在某些實施例中,導電框架結構40包含被配置在導電框架結構40的一個側邊上的主要部份48或分接頭部份48,其可進一步包含一個或多個孔洞49。在某些實施例中,在子結構中的對應於晶粒附接墊11的引線12僅被配置在晶粒附接墊11的一個側邊。在其他的實施例中,引線 12可被配置在晶粒附接墊11的超過一個側邊上。一般如圖4所示,子結構41的引線12具有遠端末端,其被結合至在子結構42中自晶粒附接墊11向外延伸的引線部份511的遠端末端。在某些實施例中,這些遠端末端被結合之處被稱為經結合的導電部份56。在某些實施例中,每個經結合的導電部份56包含介於引線12和引線部份511的所述遠端末端之間的框架51的至少部份。可理解的是,經結合的導電部份56亦可以包含在鄰近子結構中直接附接至晶粒附接墊11之與引線12鄰接的部份、可包含來自鄰近子結構之與引線12鄰接的部份以及可包含其之組合。一般來說,經結合的導電部份56是導電框架結構40的一些部份,這些部份將會被分離、單一化或在後續製程中被移除,從而曝露導電側翼表面、導電側邊表面或所述引線的導電遠端末端表面、引線部份、晶粒附接墊或在分離製程之後所曝露的導電部份。
根據所述實施例,框架結構40包含導電材料。在一個實施例中,導電框架結構40主要是由銅所組成並且為大約100μm到508μm的厚度。在其他的實施例中,框架結構40主要可由Fe-Ni(例如合金42)或是所屬技術領域中具有通常知識者所知道的其他金屬材料。導電框架結構40可使用遮罩及蝕刻技術、沖壓(stamping)技術、彎曲或成形(bending or forming)技術、電鍍技術、沉積技術、加工及/或前述之組合來加以形成或製造。如前文所述,每個電子晶粒16(例如半導體晶粒16)可使用晶粒附接材料17而被連接至晶粒附接墊11,一般如圖1所示。在某些實施例中,每個電子晶粒16的墊部份是藉由導電連接結構116(例如導線接合結構)而被電性地連接至引線12。應理解的是,導電連接結構166可被形成在製造的後段步驟中, 例如是在導電框架結構60被附接之後。
圖5圖示根據一實施例的具有互連導電連接結構19的導電框架結構60的俯視圖,其可在製造步驟中被提供。根據所述實施例,導電框架結構60可被提供為NxM陣列,其相似於含有一般如圖5所示2x2陣列的導電框架結構40。舉例來說,導電框架結構60可經建構以包含多個子結構61、62、63及64或子框架結構61、62、63及64。根據所述實施例,在每個子結構61、62、63及64中的導電連接結構19是物理性且電性地互連或聯動在一起,使得所述互連導電連接結構19可被用來在後續的電鍍製程中提供電流至在導電框架結構40中的導電構件。在某些實施例中,所述導電連接結構19的每一個是被互連至導電框架71或框架71,框架71是與導電連接結構19分隔開並且圍繞每個導電連接結構19,一般如圖5所示。在某些實施例中,聯結桿194被使用以將導電連接結構19與框架71互連在一起。在一較佳實施例中,每個導電連接結構19包含分別在導電連接結構19的相對側邊196和197上的至少兩個聯結桿194,一般如圖5所示。在一較佳實施例中,聯結桿194被定位在導電框架結構60之中以垂直於在導電框架結構40中的引線12。換句話說,聯結桿194被定位使得當導電框架結構60附接至導電框架40時,聯結桿194位於每個子組件的缺乏導電側翼表面的側邊上,而所述側邊隨後會被電鍍。此構造避免當經結合的導電部份56被移除時,聯結桿194被過早單一化。
在某些實施例中,導電框架結構60包含配置在導電框架結構60的一個側邊上的主要部份68或分接頭部份68,其可進一步包含一個或多個孔洞69。如下文中將詳細描述的,主要部份68經建構以物理性接觸 或電性連接至導電框架結構40的主要部份48以允許電流在電鍍製程中流經導電框架結構40和包含導電互連結構19的導電框架結構60兩者。
根據所述實施例,框架結構60包含導電材料。在一個實施例中,導電框架結構60主要是由銅所組成並且為大約100μm到508μm的厚度。在其他的實施例中,框架結構60主要可由Fe-Ni(例如合金42)或是所屬技術領域中具有通常知識者所知道的其他金屬材料。導電框架結構60可使用遮罩及蝕刻技術、沖壓(stamping)技術、彎曲或成形(bending or forming)技術、電鍍技術、沉積技術、加工及/或前述之組合來加以形成或製造。
圖6圖示導電框架結構60被配置而上覆於導電框架結構40以提供根據一實施例的子組件80的俯視圖。在一個實施例中,在額外的步驟中,導電框架結構60和導電框架40被連接在一起,例如包含藉由附接導電連接結構19到半導體晶粒16以及到引線12而附接在一起。如前文所述的,每個導電連接結構19可利用晶粒附接材料18而附接至半導體晶粒16(圖1所示),晶粒附接材料18可為焊料膏、導電環氧樹脂、導電黏著劑、導電膜或是所屬技術領域中具有通常知識者所知道的其他適合的附接材料。此外,每個導電連接結構19可利用附接層23而被附接至引線12(如圖1所示),附接層23可為焊料膏、導電環氧樹脂、導電黏著劑、導電膜或是所屬技術領域中具有通常知識者所知道的其他適合的附接材料。在某些實施例中,額外的附接層418(如圖7所示)可被用來附接導電框架結構60的其他部份到導電框架40,例如包含將主要部份68附接主要部份48,將此兩個部份物理性接觸在一起。所述額外的附接層418(圖7所示)可為相似於晶粒附接材料18的材料。在此步驟中,根據所述實施例來提供子組件80。也可參考圖6 的部份401,根據本發明所述部份401後續將被移除,其進一步藉由圖10而一起被描述。
圖7圖示圖6的所述子組件80沿著參考線7-7所得的橫截面視圖,並且圖8圖示圖6的所述子組件80沿著參考線8-8所得的橫截面視圖。如圖7中所示,導電框架結構60的主要部份68例如藉由附接層418物理性接觸導電框架結構40的主要部份48。根據所述實施例,此接觸可被用於後續接觸所述子組件至電鍍設備的條狀指部,條狀指部將所述子組件懸掛於電鍍液中。根據所述實施例,導電連接結構19是藉由聯結桿194和框架71而被互連在一起或是聯動在一起,並且進一步被互連至主要部份68。再者,此結構促進在所述電鍍製程中電流傳輸至引線12以形成導電層26於引線12的所述導電側翼表面121(圖示為虛線)上。
圖9圖示在進一步製程之後的圖8的子組件80的橫截面視圖。在一個實施例中,囊封步驟被用於形成一個或多個囊封封裝本體36而覆蓋子組件80的至少部份以提供囊封子組件90。在某些實施例中,封裝本體36可為基於聚合物的化合物材料,例如具有填充物的環氧樹脂、具有填充物的環氧壓克力或具有適當填充物的聚合物。封裝本體36包含非導電且環保的材料,其保護半導體晶粒16免於受到外部元件和汙染物的影響。封裝主體36可以利用膏印刷、壓縮模製、轉移模製、雙料射出成型(over-molding)、液體密封劑模製、真空疊層、其它適當的敷料器或具有此項技術中的技能者已知的其它製程來加以形成。在某些實施例中,封裝主體36是環氧樹脂模製化合物("EMC"),並且可以利用轉移或注入模製技術來加以形成。
圖10圖示在根據所述實施例的額外製程之後的囊封子組件90的橫截面視圖。根據所述實施例,囊封子組件90的部份(例如,部份401)被移除包含從導電框架結構40移除經結合的導電部份56。在一較佳實施例中,經結合的導電部份56全部被移除從而完全曝露引線12和引線部份511的所述末端表面(即,導電側翼表面121)。在某些實施例中,局部切割製程被用以移除導電框架結構40的部份,其包含經結合的導電部份56。在某些實施例中,囊封層360的部份也被移除。其它製程可用於去除部份401,包括例如遮罩和蝕刻技術、燒蝕技術、雷射技術和本領域技術人員已知的其它技術。
在隨後的步驟中,導電層26沿著導電框架結構40的曝露表面而配置,所述曝露表面包含例如晶粒附接墊11、引線12和引線部份511的曝露表面。在一較佳實施例中,囊封子組件被放入電鍍槽或是電鍍溶液中並且電流流經導電框架結構40和導電框架結構60以電鍍導電層26於導電框架結構40的曝露表面上。根據所述實施例,互連導電連接結構19經建構以促進電性連接至引線12,從而電鍍導電層26於引線12的曝露的導電側翼表面121上,相較於習知製程和結構提供小於60%的覆蓋率,所述實施例提供這些表面高達約100%的覆蓋率。導電層26可為可焊材料,例如基於錫的焊料或是所述技術領域中具有通常知識者所知的其他可焊材料。在一個實施例中,導電層26可為霧錫(matte tin)材料,其具有厚度約300到800為英寸(大約7.6微米到大約23微米)。在一個實施例中,條狀指部被附接至囊封子組件90的主要部份48和68以用於放置於所述電鍍槽或是電鍍溶液中。
在某些實施例中,在導電層26形成之後,囊封子組件90沿著例如分離區域403而被單一化或分離以提供多個經封裝的半導體裝置,例如經封裝的半導體裝置10。在某些實施例中,切割製程被用以單一化囊封子組件90,但是所屬技術領域中具有通常知識者已知的其他分離製程亦可被使用。
在某些實施例中,一個或多個晶粒附接墊11、引線12、導電連接結構19、以及聯結桿194、框架51、聯結桿53、引線部份511、經結合的導電部份56、主要部份48、聯結桿194、框架71、主要部份68及/或其之部份是導電構件的非限制範例。
根據上文所述,所屬技術領域中具有通常知識者可以根據一個實施例而判定耦合所述第二導電框架結構包含將所述第一導電框架結構的一部份物理性地接觸所述第二導電框架結構。
在另外的實施例中,移除經結合的導電部份包含局部地切割所述囊封子組件以完全地移除所述經結合的導電部份。在另外的實施例中,形成所述導電層包含以大約100%覆蓋所述導電側翼表面來形成可焊材料。
根據上文所述,所屬技術領域中具有通常知識者可以根據另一個實施例而判定移除所有的所述經結合的導電結構包含切割穿過所述經結合的導電結構。
在進一步的實施例中,形成所述導電層包含大約100%覆蓋所述第一導電構件的曝露側邊表面;以及大約100%覆蓋所述第二導電構件的曝露側邊表面。在另外的實施例中,形成所述導電層包含形成含有可焊 材料的導電層。在另外的實施例中,根據上文所述,顯而易見的是,本發明揭露一種用於製造具有改善以可焊材料覆蓋導電側翼表面的覆蓋率的經封裝的半導體裝置之新穎方法及結構。在其他特徵中還有具有互連導電連接結構的導電框架結構,其被連接到在第二導電框架結構中的引線結構。所述導電框架結構促進電性連接至導電構件(例如引線),從而提供在所述導電側翼表面上的改善的可焊材料覆蓋率。當所述經封裝的半導體裝置被附接至下一層級的組件(例如印刷電路板)時,所述方法和結構提供達到100%的可濕式附接側翼覆蓋率。相較於習知結構和方法,本發明提供較堅固的焊料結合並且改善可靠度。所述方法和結構提供具成本效益的解決方案以改善可濕式附接側翼覆蓋率並且可兼容於現有的組裝方法中。
儘管本發明的標的是利用特定的較佳實施例以及範例實施例來加以描述,但是先前的圖式以及其說明僅描繪所述標的之典型的實施例而已,並且因此並不被視為其範疇的限制。顯而易見的是,許多替代及變化對於熟習此項技術者而言都將會是明顯的。
如同在以下的請求項所反映的,本發明的特點可以是在於少於單一先前所揭露的實施例的所有特點。因此,在以下所陳述的請求項是藉此明確地被納入圖式的此詳細說明中,其中每一個請求項本身都獨立作為本發明的一個別的實施例。再者,儘管在此所述的某些實施例是包含內含在其它實施例中的一些特點、而未包含其它特點,但是不同實施例的特點的組合也是有意要落在本發明的範疇內,並且有意形成如同熟習此項技術者將會理解的不同實施例。
Claims (10)
- 一種形成經封裝的半導體裝置的方法,包含:提供第一導電框架結構;耦合第二導電框架結構至所述第一導電框架結構以提供第一子組件,其中所述第二導電框架結構包含多個互連導電連接結構;藉由囊封層來囊封所述第一子組件以提供囊封子組件;移除所述第一導電框架結構的經結合的導電部份以形成配置在所述囊封子組件的側邊表面上的多個導電側翼表面;形成導電層在所述導電側翼表面上;以及分離所述囊封子組件以提供所述經封裝的半導體裝置,每個所述經封裝的半導體裝置具有藉由所述導電層所覆蓋的所述導電側翼表面的部份。
- 如申請專利範圍第1項之方法,其中:形成所述導電層包含使用所述多個互連導電連接結構來傳遞電流經過所述第一導電框架結構的部份以電鍍所述導電層於所述導電側翼表面上;分離包含提供每個所述經封裝的半導體裝置具有曝露於所述囊封層的外側的所述第二導電框架結構的遠端末端部份;以及所述遠端末端部份是缺乏所述導電層。
- 如申請專利範圍第1項之方法,其中:提供所述第一導電框架結構包含提供:第一晶粒附接墊;與所述第一晶粒附接墊分隔開的第二晶粒附接墊;配置於鄰近所述第一晶粒附接墊的第一引線;以及 配置於鄰近所述第二晶粒附接墊的第二引線,其中所述第一引線鄰接到所述第二引線和所述第二晶粒附接墊中的一個以提供所述經結合的導電部份中的一個;附接至所述第一晶粒附接墊的第一半導體晶粒;附接至所述第二晶粒附接墊的第二半導體晶粒;耦合所述第二導電框架結構包含:附接第一導電連接結構至所述第一半導體晶粒和所述第一引線;以及附接第二導電連接結構至所述第二半導體晶粒,其中所述第一導電連接結構是物理性地互連至所述第二導電連接結構;囊封包含留下曝露於所述囊封子組件的外側之所述第一導電框架結構的至少部份;以及移除包含移除所述經結合的導電部份的一個以曝露所述第一引線的側翼表面。
- 如申請專利範圍第3項之方法,其中:附接所述第一導電連接結構包含附接第一夾具結構;附接所述第二導電連接結構包含附接第二夾具結構;附接所述第二夾具結構進一步包含附接所述第二夾具結構至所述第二引線;以及移除包含移除所述經結合的導電部份的全部。
- 如申請專利範圍第3項之方法,其中:提供所述第一導電框架結構包含提供物理性地連接至所述第二晶粒附 接墊之所述第一引線,使得一個所述經結合的導電部份是介於所述第一引線和所述第二晶粒附接墊之間;以及形成所述導電層包含:形成所述導電層於所述第一晶粒附接墊和所述第二晶粒附接墊的底表面上;以及形成所述導電層於所述第一引線和所述第二引線的底表面上。
- 一種製造經封裝的電子裝置的方法,包含:提供第一導電框架結構包含:具有第一導電構件的第一子結構;具有第二導電構件的第二子結構,其中所述第一導電構件鄰接至所述第二導電構件以提供連接所述第一子結構至所述第二子結構的經結合的導電結構;耦合至所述第一子結構的第一電子晶粒;以及耦合至所述第二子結構的第二電子晶粒;提供第二導電框架結構包含:第一導電連接結構;以及第二導電連接結構,其中所述第一導電連接結構是物理性地互連至所述第二導電連接結構;附接所述第一導電連接結構到所述第一電子晶粒和所述第一導電構件以及附接所述第二導電連接結構到至少所述第二電子晶粒以形成第一子組件;藉由囊封層來囊封所述第一子組件的部份以形成囊封子組件,其中所 述第一導電框架結構的至少部份被曝露於所述囊封子組件的外側;移除所有的所述經結合的導電結構以形成所述第一導電構件的曝露側邊表面和所述第二導電構件的曝露側邊表面;形成導電層於所述第一導電框架結構的曝露表面上、於所述第一導電構件的所述曝露側邊表面上以及於所述第二導電構件的所述曝露側邊表面上;以及分離所述囊封子組件以提供具有藉由所述導電層所覆蓋之所述第一導電構件的所述曝露側邊表面的第一封裝電子裝置以及具有藉由所述導電層所覆蓋之所述第二導電構件的所述曝露側邊表面的第二封裝電子裝置。
- 如申請專利範圍第6項之方法,其中形成所述導電層包含:放置所述囊封子組件於電鍍溶液之中;以及將電流流經所述第一導電框架結構和所述第二導電框架結構以電鍍所述導電層於所述第一導電框架結構的所述曝露表面上、於所述第一導電構件的所述曝露側邊表面上以及於所述第二導電構件的所述曝露側邊表面上。
- 如申請專利範圍第6項之方法,其中:提供所述第一導電框架結構包含:提供所述第一導電構件包含引線;提供所述第二導電構件包含晶粒附接墊;提供所述第二導電框架結構包含:提供第一夾具結構與第二夾具聯動在一起;以及提供所述第一夾具結構物理性地互連至所述第二導電框架結構於具 有聯結桿的至少兩個側邊上;附接所述第一導電連接結構包含使所述第一導電框架結構的部份物理性接觸所述第二導電框架結構;以及分離包含提供所述第一封裝電子裝置和所述第二封裝電子裝置之每一個具有曝露於所述囊封層的外側的所述第二導電框架結構的遠端末端部份,其缺乏所述導電層。
- 如申請專利範圍第6項之方法,其中形成所述導電層包含:形成所述導電層於所述第一導電構件的下表面上;以及形成所述導電層於所述第二導電構件的下表面上。
- 一種經封裝的半導體裝置,包含:晶粒附接墊;多個引線,其配置鄰近於所述晶粒附接墊,每個引線具有引線底表面和引線末端表面;半導體晶粒,其耦合至所述晶粒附接墊;導電夾具,其附接至所述半導體晶粒和所述多個引線,其中所述導電夾具包含至少一個聯結桿;封裝本體,其囊封所述半導體晶粒、所述導電夾具、所述多個引線的部份、所述至少一個聯結桿的至少部份以及所述晶粒附接墊的至少部份,其中每個引線末端表面被曝露於所述封裝本體的側邊表面上,且其中所述至少一個聯結桿的末端表面被曝露於所述封裝本體的外側;以及導電層,其配置於每個引線末端表面上但是沒有配置於所述至少一個聯結桿的所述末端表面上。
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TWI764256B (zh) * | 2020-08-28 | 2022-05-11 | 朋程科技股份有限公司 | 智慧功率模組封裝結構 |
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US20180350735A1 (en) | 2018-12-06 |
US20210013142A1 (en) | 2021-01-14 |
TWI746574B (zh) | 2021-11-21 |
KR20180105550A (ko) | 2018-09-28 |
CN108630554A (zh) | 2018-10-09 |
US10121742B2 (en) | 2018-11-06 |
US20180269147A1 (en) | 2018-09-20 |
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