TW201816866A - Dicing tape integrated adhesive sheet capable of firmly fixing a semiconductor wafer during stealth dicing and capable of easily peeling a semiconductor chip during pickup - Google Patents

Dicing tape integrated adhesive sheet capable of firmly fixing a semiconductor wafer during stealth dicing and capable of easily peeling a semiconductor chip during pickup Download PDF

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Publication number
TW201816866A
TW201816866A TW106134008A TW106134008A TW201816866A TW 201816866 A TW201816866 A TW 201816866A TW 106134008 A TW106134008 A TW 106134008A TW 106134008 A TW106134008 A TW 106134008A TW 201816866 A TW201816866 A TW 201816866A
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adhesive layer
film
adhesive
semiconductor wafer
dicing
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TW106134008A
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Chinese (zh)
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TWI742171B (en
Inventor
福井章洋
大西謙司
宍戶雄一郎
木村雄大
高本尚英
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日東電工股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/412—Additional features of adhesives in the form of films or foils characterized by the presence of essential components presence of microspheres
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2423/00—Presence of polyolefin
    • C09J2423/006—Presence of polyolefin in the substrate
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • C09J2433/003—Presence of (meth)acrylic polymer in the primer coating
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2463/00—Presence of epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body

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  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adhesive Tapes (AREA)
  • Dicing (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)

Abstract

The present invention provides a dicing sheet integrated adhesive film capable of firmly fixing a semiconductor wafer during stealth dicing and capable of easily peeling a semiconductor chip during pickup. The dicing sheet integrated adhesive film is characterized by comprising a dicing sheet having a substrate and an adhesive layer, and a bonding agent layer formed on the adhesive layer. The adhesive layer includes the following acrylic polymer A and a foaming agent. The bonding agent layer includes a thermoplastic resin, and the content of the thermoplastic resin is in the range of 40 wt% to 95 wt% with respect to the total resin component of the bonding agent layer. The acrylic polymer A is an acrylic polymer obtained from a monomer composition containing an acrylate ester represented by CH2=CHCOOR<1> (wherein R1 is an alkyl group having 6 to 10 carbon atoms) in a range of 50 wt% or less.

Description

切割帶一體型接著片Cutting tape integrated type

本發明係關於一種切割帶一體型接著片。The present invention relates to a cutting tape integrated adhesive sheet.

先前，於半導體裝置之製造中，有時使用切割黏晶膜。切割黏晶膜係於切割片上可剝離黏晶膜而設置者。於半導體裝置之製造中，於切割黏晶膜之黏晶膜上保持半導體晶圓，切割半導體晶圓，製成一個個晶片。然後，將晶片與黏晶膜一起自切割片剝離，經由黏晶膜固定於引線框架等被接著體。 使用於切割片上積層有黏晶膜而成之切割黏晶膜，於黏晶膜之保持下切割半導體晶圓之情形時，必需將黏晶膜與半導體晶圓同時切斷。 但是，近年來，推進半導體封裝體之小型化、薄型化，與此相伴，推進半導體晶圓之極薄化。因此，使用金剛石刀片之切割方法有時無法適當地切割晶圓。 因此，近年來，提出有如下方法：藉由對半導體晶圓之分割預定線照射雷射光而形成改性區域，而使半導體晶圓變得能夠容易地沿分割預定線進行分割，然後將該半導體晶圓黏貼於切割黏晶膜，然後將切割黏晶膜於低溫下(例如，-15℃～5℃)擴張(以下亦稱為「冷擴張」)，從而使半導體晶圓與黏晶膜斷裂，獲得一個個半導體晶片(附黏晶膜之半導體晶片)(例如，參照專利文獻1)。其係被稱為所謂隱形切割(Stealth Dicing；註冊商標)之方法。 另外，近年來，提出有如下方法：於半導體晶圓之表面用刀片形成槽(半切)，然後進行背面磨削，將背面磨削後之半導體晶圓黏貼於切割黏晶膜，將切割黏晶膜於低溫下(例如，-15℃～5℃)擴張(以下亦稱為「冷擴張」)，從而使黏晶膜斷裂，獲得一個個半導體晶片(附黏晶膜之半導體晶片)(例如，參照專利文獻2)。其係被稱為所謂「DBG」(Dicing Before Grinding，先切割後磨削)法之方法。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2009-164556號公報 [專利文獻2]日本專利特開2003-007649號公報Previously, in the manufacture of semiconductor devices, a dicing die-bond film was sometimes used. The dicing die-bonding film is provided on the dicing sheet so as to be peelable. In the manufacture of a semiconductor device, a semiconductor wafer is held on a dicing film of a dicing film, and the semiconductor wafer is diced to form individual wafers. Then, the wafer is peeled from the dicing sheet together with the die-bonding film, and is fixed to an adherend such as a lead frame through the die-bonding film. When a die-bonding film formed by laminating a die-bonding film on a dicing sheet is used, in the case of cutting a semiconductor wafer with the die-bonding film maintained, the die-bonding film and the semiconductor wafer must be cut at the same time. However, in recent years, miniaturization and thinning of semiconductor packages have been promoted, and along with this, extremely thin semiconductor wafers have been promoted. Therefore, a dicing method using a diamond blade sometimes fails to appropriately cut a wafer. Therefore, in recent years, a method has been proposed in which a modified region is formed by irradiating laser light on a predetermined division line of a semiconductor wafer, so that the semiconductor wafer can be easily divided along the predetermined division line, and then the semiconductor is divided. The wafer is adhered to the dicing die film, and then the dicing die film is expanded at a low temperature (for example, -15 ° C to 5 ° C) (hereinafter also referred to as "cold expansion"), thereby breaking the semiconductor wafer and the dicing film Each semiconductor wafer (semiconductor wafer with a sticky crystal film) is obtained (for example, refer to Patent Document 1). It is a method called Stealth Dicing (registered trademark). In addition, in recent years, the following methods have been proposed: forming grooves (half cuts) on the surface of a semiconductor wafer with a blade, and then performing back surface grinding, and adhering the semiconductor wafer after the back surface grinding to a dicing die-bonding film, The film is expanded at a low temperature (for example, -15 ° C to 5 ° C) (hereinafter also referred to as "cold expansion"), so that the viscous crystal film is broken, and individual semiconductor wafers (semiconductor wafers with viscous crystal film) are obtained (for example, See Patent Document 2). This method is called the "DBG" (Dicing Before Grinding) method. [Prior Art Literature] [Patent Literature] [Patent Literature 1] Japanese Patent Laid-Open No. 2009-164556 [Patent Literature 2] Japanese Patent Laid-Open No. 2003-007649

[發明所欲解決之問題] 然而，本發明者等人注意到存在如下問題：於半導體晶圓為極薄型之情形時，若進行隱形切割，則於切斷半導體晶圓同時單片化之半導體晶圓(半導體晶片)會發生翹曲。另一方面，存在若以半導體晶片不會翹曲之方式牢固地黏貼於切割片時，則這次有時無法適宜地拾取之問題。 另外，本發明者等人注意到存在如下問題：於進行DBG之情形時，若未將半導體晶片牢固地黏貼於切割片，則於冷擴張時半導體晶片浮起。另一方面，存在若牢固地黏貼於切割片，則這次有時無法適宜地拾取之問題。 本發明係鑒於上述問題方面而成，其目的在於提供一種於隱形切割或DBG時能夠牢固地固定半導體晶圓、且於拾取時能夠容易地剝離半導體晶片之切割片一體型接著膜。 [解決問題之技術手段] 本發明者等人為了解決上述問題方面，針對切割片一體型接著膜進行了研究。其結果，發現：藉由採用下述構成之切割片一體型接著膜，能夠於隱形切割、或DBG時牢固地固定半導體晶圓，並且能夠於拾取時容易地剝離半導體晶片，從而完成本發明。 即，本發明之切割片一體型接著膜之特徵在於： 其具備： 具有基材及黏著劑層之切割片、以及 設置於上述黏著劑層上之接著劑層， 上述黏著劑層包含下述丙烯酸系聚合物A及發泡劑， 上述接著劑層包含熱塑性樹脂，上述熱塑性樹脂之含量相對於上述接著劑層之樹脂成分整體在40重量%～95重量%之範圍內。 丙烯酸系聚合物A：由以50重量%以下之範圍內含有CH2 =CHCOOR1 (式中，R1 係碳數為6～10之烷基)所示之丙烯酸酯之單體組合物獲得的丙烯酸系聚合物。 根據上述構成，黏著劑層含有上述丙烯酸系聚合物A，因此於發泡劑發泡前，能夠牢固地固定黏貼對象(例如，附接著劑層之半導體晶圓)。另外，黏著劑層包含發泡劑，因此會因加熱而於黏著劑層表面形成凹凸。其結果，能夠減小與黏貼對象(例如，附接著劑層之半導體晶片)之接觸面積，大幅降低黏著力。 即，根據上述構成，黏著劑層含有上述丙烯酸系聚合物A及發泡劑，因此於隱形切割時能夠牢固地固定黏貼對象，並且於拾取時能夠利用加熱而使黏著力大幅降低，從而容易地剝離黏貼對象。 另外，上述丙烯酸系聚合物A係由以50重量%以下之範圍內含有CH2 =CHCOOR1 (式中，R1 係碳數為6～10的烷基)所示之丙烯酸酯之單體組合物獲得的丙烯酸系聚合物，因此對接著劑層之糊劑殘留較少，表現出良好之剝離性。 另外，藉由將上述接著劑層之熱塑性樹脂之含量設為上述數值範圍內，從而上述黏著劑層發泡之溫度下的儲存彈性模數不會變得過低，因此能夠於拾取時表現出良好之剝離性。 另外，藉由將上述接著劑層之熱塑性樹脂之含量設為上述數值範圍內，從而熱塑性樹脂以外之低分子量成分向黏著劑層中之移動的影響變小，能夠於拾取時表現出良好之剝離性。 上述構成中，較佳為上述黏著劑層藉由70℃～140℃之加熱而發泡。 上述黏著劑層若為藉由70℃～140℃之加熱而發泡之層，則於藉由因加熱引起之發泡而使黏著力降低時，能夠抑制接著劑層之反應(例如，熱硬化反應)之進行，能夠將因加熱引起之接著劑層的物性變化抑制於最小限度。 上述構成中，較佳為，將上述黏著劑層因加熱而發泡之溫度設為溫度A時，上述接著劑層之硬化前之溫度A下之儲存彈性模數在0.1 MPa～50 MPa的範圍內。 若上述接著劑層之硬化前之溫度A下之儲存彈性模數為0.1 MPa以上，則伴隨黏著劑層之發泡劑之發泡，能夠適宜地降低黏著劑層與接著劑層之間的剝離力。另外，若上述儲存彈性模數為50 MPa以下，則晶片接合時之空隙之填埋性變良好。 上述構成中，較佳為，上述接著劑層之硬化前之23℃下之儲存彈性模數在10 MPa～3400 MPa的範圍內。 若上述接著劑層之硬化前之23℃下之儲存彈性模數為10 MPa以上，則於熱發泡後恢復至室溫時，能夠防止黏著劑層與接著劑層之接觸面積的增大，能夠有效地降低黏著劑層與接著劑層之接觸面積。另外，若上述儲存彈性模數為3400 MPa以下，則切割片一體型接著膜之可撓性變良好，操作性優異。 上述構成中，較佳為，上述黏著劑層發泡前之上述接著劑層與上述黏著劑層之間的23℃下之剝離力在1 N/100 mm～50 N/100 mm之範圍內。 藉由將上述黏著劑層發泡前之上述接著劑層與上述黏著劑層之間的23℃下之剝離力設為1 N/100 mm～50 N/100 mm之範圍內，能夠防止因刀片引起之切割時的晶片飛散、或磨削屑之侵入。另外，能夠高效地降低加熱處理後之剝離力。即，根據上述構成，即便於利用刀片進行切割之情形時，亦能夠牢固地固定半導體晶圓，並且於拾取時能夠容易地剝離半導體晶片。 上述構成中，較佳為，上述黏著劑層發泡前之上述接著劑層與上述黏著劑層之間的-15℃下之剝離力為1 N/100 mm以上。 若上述黏著劑層發泡前之上述接著劑層與上述黏著劑層之間的-15℃下之剝離力為1 N/100 mm以上，則隱形切割中之接著劑層之切斷性提高。 上述構成中，上述發泡劑較佳為熱膨脹性微球。 若上述發泡劑為熱膨脹性微球，則能夠利用加熱而更適宜地降低剝離力。 上述構成中，上述熱塑性樹脂較佳為丙烯酸系樹脂。 若上述熱塑性樹脂為丙烯酸系樹脂，則能抑制成本，亦容易購入。另外，可靠性亦優異。 上述構成中，上述接著劑層較佳為黏晶膜。 若使用上述接著劑層作為黏晶膜，則能夠適宜地將半導體晶片等晶片接合於被接著體。 [發明之效果] 根據本發明，於隱形切割時能夠牢固地固定半導體晶圓，並且於拾取時能夠容易地剝離半導體晶片。[Problems to be Solved by the Invention] However, the inventors have noticed the following problem: When the semiconductor wafer is extremely thin, if the stealth dicing is performed, the semiconductor wafer is simultaneously singulated when the semiconductor wafer is cut. The wafer (semiconductor wafer) is warped. On the other hand, when the semiconductor wafer is firmly adhered to the dicing sheet such that the semiconductor wafer does not warp, there is a problem that it may not be properly picked up this time. In addition, the inventors of the present invention noticed the following problem: In the case of DBG, if the semiconductor wafer is not firmly adhered to the dicing sheet, the semiconductor wafer floats during cold expansion. On the other hand, there is a problem that if the dicing sheet is firmly adhered, it may not be properly picked up this time. The present invention has been made in view of the above-mentioned problems, and an object thereof is to provide a dicing sheet-integrated adhesive film that can securely fix a semiconductor wafer during stealth dicing or DBG, and can easily peel off a semiconductor wafer during pickup. [Technical Means for Solving the Problem] In order to solve the above-mentioned problems, the inventors of the present invention have studied a dicing sheet-integrated adhesive film. As a result, it was found that by using a dicing sheet-integrated adhesive film having the following configuration, the semiconductor wafer can be firmly fixed during stealth dicing or DBG, and the semiconductor wafer can be easily peeled off during picking up, thereby completing the present invention. That is, the dicing sheet-integrated adhesive film of the present invention is characterized in that it includes: a dicing sheet having a base material and an adhesive layer, and an adhesive layer provided on the adhesive layer, and the adhesive layer includes the following acrylic acid In the polymer A and the foaming agent, the adhesive layer includes a thermoplastic resin, and the content of the thermoplastic resin is within a range of 40% to 95% by weight based on the entire resin component of the adhesive layer. Acrylic polymer A: In the range of 50 wt% or less of containing CH 2 = CHCOOR 1 (Formula, R 1 is an alkyl-based carbon atoms of 6 to 10) shown in the acrylic monomer composition of the obtained Acrylic polymer. According to the above configuration, the adhesive layer contains the acrylic polymer A described above, and thus the object to be adhered (for example, a semiconductor wafer with an adhesive layer) can be firmly fixed before the foaming agent is foamed. In addition, since the adhesive layer contains a foaming agent, unevenness is formed on the surface of the adhesive layer by heating. As a result, it is possible to reduce the contact area with an object to be adhered (for example, a semiconductor wafer with an adhesive layer), and significantly reduce the adhesive force. That is, according to the above configuration, the adhesive layer contains the acrylic polymer A and the foaming agent, so that the adhered object can be firmly fixed during stealth cutting, and the adhesive force can be greatly reduced by heating during picking up, thereby easily Peel the paste object. The acrylic polymer A is a monomer combination containing an acrylic ester represented by CH 2 = CHCOOR 1 (wherein R 1 is an alkyl group having 6 to 10 carbon atoms) in a range of 50% by weight or less. The acrylic polymer obtained from the product has less paste residue on the adhesive layer and exhibits good peelability. In addition, by setting the content of the thermoplastic resin of the adhesive layer within the above-mentioned numerical range, the storage elastic modulus at the temperature at which the adhesive layer is foamed does not become too low, so it can be exhibited at the time of pickup. Good peelability. In addition, by setting the content of the thermoplastic resin in the adhesive layer to the above-mentioned numerical range, the influence of the movement of low-molecular-weight components other than the thermoplastic resin into the adhesive layer is reduced, and good peeling can be exhibited at the time of pickup Sex. In the said structure, it is preferable that the said adhesive layer is foamed by heating at 70 degreeC-140 degreeC. If the adhesive layer is a layer that is foamed by heating at 70 ° C to 140 ° C, when the adhesive force is reduced by foaming caused by heating, the reaction of the adhesive layer (for example, heat curing) can be suppressed. The progress of reaction) can minimize the change in physical properties of the adhesive layer caused by heating. In the above configuration, when the temperature at which the adhesive layer is foamed by heating is set to temperature A, the storage elastic modulus at the temperature A before the adhesive layer is cured is preferably in the range of 0.1 MPa to 50 MPa. Inside. If the storage elastic modulus at the temperature A before the curing of the adhesive layer is 0.1 MPa or more, the foaming of the foaming agent of the adhesive layer can appropriately reduce the peeling between the adhesive layer and the adhesive layer. force. In addition, if the storage elastic modulus is 50 MPa or less, the burial property of the voids during wafer bonding becomes good. In the above configuration, it is preferable that the storage elastic modulus at 23 ° C. before curing of the adhesive layer is in a range of 10 MPa to 3400 MPa. If the storage elastic modulus at 23 ° C before the hardening of the adhesive layer is 10 MPa or more, it can prevent the contact area of the adhesive layer and the adhesive layer from increasing when it returns to room temperature after thermal foaming. It can effectively reduce the contact area between the adhesive layer and the adhesive layer. In addition, if the storage elastic modulus is 3400 MPa or less, the flexibility of the dicing sheet-integrated adhesive film becomes good, and the handleability is excellent. In the above configuration, it is preferable that a peeling force at 23 ° C. between the adhesive layer and the adhesive layer before the adhesive layer is foamed is in a range of 1 N / 100 mm to 50 N / 100 mm. By setting the peeling force at 23 ° C between the adhesive layer and the adhesive layer before the adhesive layer is foamed to a range of 1 N / 100 mm to 50 N / 100 mm, it is possible to prevent the blade from being damaged. Wafer scattering during cutting or intrusion of grinding debris. In addition, the peeling force after the heat treatment can be efficiently reduced. That is, according to the above configuration, the semiconductor wafer can be firmly fixed even when dicing is performed with a blade, and the semiconductor wafer can be easily peeled off during picking up. In the above configuration, it is preferable that a peeling force at -15 ° C between the adhesive layer and the adhesive layer before the adhesive layer is foamed is 1 N / 100 mm or more. If the peel force at -15 ° C between the adhesive layer and the adhesive layer before the adhesive layer is foamed is 1 N / 100 mm or more, the cuttability of the adhesive layer in stealth cutting is improved. In the above configuration, the foaming agent is preferably a thermally expandable microsphere. When the foaming agent is a heat-expandable microsphere, the peeling force can be more appropriately reduced by heating. In the above configuration, the thermoplastic resin is preferably an acrylic resin. If the said thermoplastic resin is an acrylic resin, cost can be suppressed and it will become easy to purchase. In addition, reliability is also excellent. In the above-mentioned configuration, the adhesive layer is preferably a sticky film. When the above-mentioned adhesive layer is used as a die attach film, a wafer such as a semiconductor wafer can be appropriately bonded to an adherend. [Effects of the Invention] According to the present invention, a semiconductor wafer can be firmly fixed during stealth dicing, and the semiconductor wafer can be easily peeled off when picked up.

以下，對於本發明之切割片一體型接著膜為切割黏晶膜之情形進行說明。即，對於本發明之接著劑層為黏晶膜之情形進行說明。 (切割黏晶膜) 以下，對於本實施形態之切割黏晶膜進行說明。圖1為表示本實施形態之切割黏晶膜之剖面示意圖。 如圖1所示，切割黏晶膜10具有於切割片11上積層有黏晶膜3之構成。切割片11具有於基材1上積層有黏著劑層2之構成。黏晶膜3設置於黏著劑層2上。 再者，於本實施形態中，對切割片11中存在未被黏晶膜3覆蓋之部分2b之情形進行說明，但本發明之切割黏晶膜不限定於該例，黏晶膜亦可以覆蓋切割片整體之方式積層於切割片上。 黏著劑層2包含下述丙烯酸系聚合物A及發泡劑， 黏晶膜3包含熱塑性樹脂，上述熱塑性樹脂之含量相對於黏晶膜之樹脂成分整體在40重量%～95重量%之範圍內。 丙烯酸系聚合物A：由以50重量%以下之範圍內含有CH2 =CHCOOR1 (式中，R1 係碳數為6～10之烷基)所示之丙烯酸酯之單體組合物獲得的丙烯酸系聚合物。 黏著劑層2含有上述丙烯酸系聚合物A，因此於發泡劑發泡前，能夠牢固地固定黏貼對象(例如，附接著劑層之半導體晶圓)。另外，黏著劑層2包含發泡劑，因此會因加熱而於黏著劑層2表面形成凹凸。其結果，能夠減少與黏貼對象(例如，附接著劑層之半導體晶片)之接觸面積，大幅降低黏著力。 即，根據切割黏晶膜10，黏著劑層2含有上述丙烯酸系聚合物A及發泡劑，因此，於隱形切割時能夠牢固地固定黏貼對象，並且於拾取時能夠藉由加熱而使黏著力大幅降低，從而容易地剝離黏貼對象。 另外，上述丙烯酸系聚合物A係由以50重量%以下之範圍內含有CH2 =CHCOOR1 (式中，R1 係碳數為6～10之烷基)所示之丙烯酸酯之單體組合物獲得的丙烯酸系聚合物，因此，對黏晶膜3之糊劑殘留較少，表現出良好之剝離性。 另外，藉由將黏晶膜3之熱塑性樹脂之含量設為上述數值範圍內，從而黏著劑層2發泡之溫度下之儲存彈性模數不會變得過低，因此能夠於拾取時表現出良好之剝離性。 另外，藉由將黏晶膜3之熱塑性樹脂之含量設為上述數值範圍內，從而熱塑性樹脂以外之低分子量成分向黏著劑層中之移動的影響變小，能夠於拾取時表現出良好之剝離性。 黏著劑層2發泡前之黏晶膜3與黏著劑層2之間的23℃下之剝離力較佳為1 N/100 mm～50 N/100 mm之範圍內，更佳為3 N/100 mm～40 N/100 mm，進而較佳為5 N/100 mm～35 N/100 mm。藉由將黏著劑層2發泡前之黏晶膜3與黏著劑層2之間的23℃下之剝離力設為上述數值範圍內，能夠防止因刀片引起之切割時之晶片飛散、或磨削屑之侵入。另外，能夠高效地降低加熱處理後之剝離力。 黏著劑層2發泡前之黏晶膜3與黏著劑層2之間的23℃下之剝離力的測定方法依據實施例記載之方法。 黏著劑層2發泡前之黏晶膜3與黏著劑層2之間的-15℃下之剝離力較佳為1 N/100 mm以上，更佳為1.5 N/100 mm以上，進而較佳為2 N/100 mm以上。若黏著劑層2發泡前之黏晶膜3與黏著劑層2之間的-15℃下之剝離力為上述數值範圍內，則隱形切割中之黏晶膜3的切斷性提高。 黏著劑層2發泡前之黏晶膜3與黏著劑層2之間的-15℃下之剝離力的測定方法依據實施例記載之方法。 使黏著劑層2發泡後之黏晶膜3與黏著劑層2之間的23℃下之剝離力較佳為0 N/100 mm～5 N/100 mm之範圍內，更佳為0 N/100 mm～3 N/100 mm，進而較佳為0 N/100 mm～2 N/100 mm。若使黏著劑層2發泡後之黏晶膜3與黏著劑層2之間的23℃下之剝離力為上述數值範圍內，則能夠良好地進行拾取。 (黏晶膜) 將黏著劑層2因加熱而發泡之溫度設為溫度A時，黏晶膜3之硬化前之溫度A下的儲存彈性模數較佳為0.1 MPa～50 MPa之範圍內，更佳為0.1 MPa～40 MPa之範圍內，進而較佳為0.2 MPa～40 MPa之範圍內。若黏晶膜3之硬化前之溫度A下的儲存彈性模數為0.1 MPa以上，則伴隨黏著劑層2之發泡劑之發泡，能夠適宜地降低黏著劑層2與黏晶膜3之間的剝離力。另外，若上述儲存彈性模數為50 MPa以下，則晶片接合時之空隙的填埋性變良好。 黏晶膜3之硬化前之23℃下的儲存彈性模數較佳為10 MPa～3400 MPa之範圍內，更佳為10 MPa～3000 MPa之範圍內，進而較佳為20 MPa～2500 MPa之範圍內。若黏晶膜3之硬化前之23℃下的儲存彈性模數為10 MPa以上，則於熱發泡後恢復至室溫時，能夠防止黏著劑層2與黏晶膜3之接觸面積之增大，能夠有效地降低黏著劑層2與黏晶膜3之接觸面積。另外，若上述儲存彈性模數為3400 MPa以下，則切割黏晶膜10之可撓性變良好，操作性優異。 如圖1所示，黏晶膜3之層構成可列舉包含單層之接著劑層之層構成。再者，於本說明書中，單層係指包含同一組成之層，包括將包含同一組成之層進行複數層積層而成者。 但是，本發明中之黏晶膜不限定於該例。例如，可為將組成不同之2種以上之接著劑層積層而成的多層結構。 黏晶膜3包含熱塑性樹脂。另外，黏晶膜3較佳為包含熱硬化性樹脂。 作為上述熱硬化性樹脂，可列舉：苯酚樹脂、胺基樹脂、不飽和聚酯樹脂、環氧樹脂、聚胺基甲酸酯樹脂、有機矽樹脂、熱硬化性聚醯亞胺樹脂等。該等樹脂可單獨或併用2種以上來使用。特別較佳為較少含有會腐蝕半導體元件之離子性雜質等的環氧樹脂。另外，作為環氧樹脂之硬化劑，較佳為苯酚樹脂。 上述環氧樹脂只要為通常用作接著劑組合物之樹脂，則無特別限定，例如可使用雙酚A型、雙酚F型、雙酚S型、溴化雙酚A型、氫化雙酚A型、雙酚AF型、聯苯型、萘型、芴型、苯酚酚醛清漆型、鄰甲酚酚醛清漆型、三羥苯基甲烷型、四羥苯基乙烷(tetraphenylolethane)型等二官能環氧樹脂或多官能環氧樹脂、乙內醯脲型、異氰脲酸三縮水甘油酯型、縮水甘油胺型等環氧樹脂。該等可單獨或併用2種以上來使用。該等環氧樹脂之中，特別較佳為酚醛清漆型環氧樹脂、聯苯型環氧樹脂、三羥苯基甲烷型樹脂、四羥苯基乙烷型環氧樹脂。其原因在於，該等環氧樹脂富有與作為硬化劑之苯酚樹脂之反應性，耐熱性等優異。 上述苯酚樹脂作為上述環氧樹脂之硬化劑發揮作用，例如可列舉苯酚酚醛清漆樹脂、苯酚芳烷基樹脂、甲酚酚醛清漆樹脂、第三丁基苯酚酚醛清漆樹脂、壬基苯酚酚醛清漆樹脂等酚醛清漆型苯酚樹脂、可溶酚醛型苯酚樹脂、聚對氧苯乙烯等聚氧苯乙烯等。該等可單獨或併用2種以上來使用。該等苯酚樹脂之中，特別較佳為苯酚酚醛清漆樹脂、苯酚芳烷基樹脂。其原因在於能夠提高半導體裝置之連接可靠性。 關於上述環氧樹脂與苯酚樹脂之調配比率，例如以相對於上述環氧樹脂成分中之環氧基1當量，苯酚樹脂中之羥基為0.5～2.0當量之方式調配較為適宜。更佳為0.8～1.2當量。即，其原因在於，若兩者之調配比率偏離上述範圍，則無法進行充分之硬化反應，環氧樹脂硬化物之特性變得容易劣化。 作為上述熱塑性樹脂，可列舉：天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁二烯橡膠、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、6-尼龍、或6,6-尼龍等聚醯胺樹脂、苯氧基樹脂、丙烯酸系樹脂、PET、或PBT等飽和聚酯樹脂、聚醯胺醯亞胺樹脂、或氟樹脂等。該等熱塑性樹脂可單獨或併用2種以上來使用。該等熱塑性樹脂之中，特別較佳為離子性雜質較少、耐熱性較高、能夠確保半導體元件之可靠性的丙烯酸系樹脂。 作為上述丙烯酸系樹脂，並無特別限定，可列舉：將具有碳數30以下、特別是碳數4～18之直鏈或支鏈之烷基的丙烯酸或甲基丙烯酸之酯的1種或2種以上作為成分的聚合物(丙烯酸系共聚物)等。作為上述烷基，例如可列舉：甲基、乙基、丙基、異丙基、正丁基、第三丁基、異丁基、戊基、異戊基、己基、庚基、環己基、2-乙基己基、辛基、異辛基、壬基、異壬基、癸基、異癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八烷基、或十二烷基等。 上述丙烯酸系樹脂之中，就提高凝聚力之理由而言，特別較佳為丙烯酸系共聚物。作為上述丙烯酸系共聚物，例如可列舉丙烯酸乙酯與甲基丙烯酸甲酯之共聚物、丙烯酸與丙烯腈之共聚物、丙烯酸丁酯與丙烯腈之共聚物。 另外，作為形成上述聚合物之其他單體，並無特別限定，例如可列舉：丙烯酸、甲基丙烯酸、丙烯酸羧基乙酯、丙烯酸羧基戊酯、衣康酸、馬來酸、富馬酸或巴豆酸等含羧基單體、馬來酸酐或衣康酸酐等酸酐單體、(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯或丙烯酸(4-羥基甲基環己基)甲酯等含羥基單體、苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺丙酯或(甲基)丙烯醯氧基萘磺酸等含磺酸基單體、2-羥基乙基丙烯醯基磷酸酯等各種含磷酸基單體、(甲基)丙烯酸縮水甘油酯等含環氧基單體。其中，就可靠性之觀點而言，較佳使用含環氧基單體。 如上所述，熱塑性樹脂之含量相對於黏晶膜之樹脂成分整體為40重量%～95重量%之範圍內。上述含有率較佳為40重量%～93重量%之範圍內，更佳為42重量%～93重量%之範圍內。 另外，熱塑性樹脂之含量相對於黏晶膜整體較佳為30重量%～90重量%之範圍內，更佳為35重量%～88重量%之範圍內，進而較佳為40重量%～86重量%之範圍內。 藉由將黏晶膜3之熱塑性樹脂之含量設為上述數值範圍內，黏著劑層2發泡之溫度下的儲存彈性模數不會變得過低，因此能夠於拾取時表現出良好之剝離性。 另外，藉由將黏晶膜3之熱塑性樹脂之含量設為上述數值範圍內，熱塑性樹脂以外之低分子量成分向黏著劑層中的移動之影響變小，能夠於拾取時表現出良好之剝離性。 作為上述熱硬化性樹脂之調配比率，只要為於特定條件下加熱時黏晶膜3發揮作為熱硬化型之功能的程度則無特別限定，相對於黏晶膜3整體較佳為5～60重量%之範圍內，更佳為10～50重量%之範圍內。 於預先使黏晶膜3以某種程度交聯之情形時，於製作時，可預先添加會與聚合物之分子鏈末端之官能基等反應之多官能性化合物作為交聯劑。藉此，能提高高溫下之接著特性，實現耐熱性之改善。 作為上述交聯劑，可採用先前公知之交聯劑。特別是更佳為甲苯二異氰酸酯、二苯基甲烷二異氰酸酯、對苯二異氰酸酯、1,5-萘二異氰酸酯、多元醇與二異氰酸酯之加成物等多異氰酸酯化合物。作為交聯劑之添加量，相對於上述聚合物100重量份通常較佳為設為0.05～7重量份。藉由將交聯劑之量設為7重量份以下，能抑制接著力之降低。另一方面，藉由設為0.05重量份以上，能提高凝聚力。另外，亦可與此種多異氰酸酯化合物一併，根據需要含有環氧樹脂等其他多官能性化合物。 另外，黏晶膜3中可根據其用途適當調配填料。填料之調配能賦予導電性、提高導熱性、調節彈性模數、調整熱膨脹係數等。作為上述填料，可列舉無機填料及有機填料，就提高處理性、提高導熱導電性、調整熔融黏度、賦予觸變性等特性之觀點而言，較佳為無機填料。作為上述無機填料，並無特別限制，例如可列舉：氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁、氮化鋁、硼酸鋁晶鬚、氮化硼、結晶二氧化矽、非晶質二氧化矽等。該等可單獨或併用2種以上來使用。就提高導熱導電性之觀點而言，較佳為氧化鋁、氮化鋁、氮化硼、結晶二氧化矽、非晶質二氧化矽。另外，就上述各特性之平衡較佳之觀點而言，較佳為結晶二氧化矽或非晶質二氧化矽。另外，就賦予導電性、提高導熱導電性等目的而言，作為無機填料，可使用導電性物質(導電填料)。作為導電填料，可列舉將銀、鋁、金、銅、鎳、導電性合金等製成球狀、針狀、鱗片狀而成之金屬粉、氧化鋁等金屬氧化物、無定形碳黑、石墨等。 上述填料之平均粒徑較佳為0.005～10 μm，更佳為0.005～1 μm。其原因在於，藉由將上述填料之平均粒徑設為0.005 μm以上，能使對被接著體之潤濕性、及接著性良好。另外，藉由設為10 μm以下，能使為了賦予上述各特性而添加之填料的效果充分，同時能夠確保耐熱性。再者，填料之平均粒徑例如為用光度式之粒度分佈計(HORIBA製造，裝置名；LA-910)求出的值。 再者，於黏晶膜3中，除了上述填料以外，亦可根據需要適宜調配其他添加劑。作為其他添加劑，例如可列舉：阻燃劑、矽烷偶合劑或離子捕捉劑等。作為上述阻燃劑，例如可列舉：三氧化銻、五氧化銻、溴化環氧樹脂等。該等可單獨或併用2種以上來使用。作為上述矽烷偶合劑，例如可列舉：β-(3,4-環氧環己基)乙基三甲氧基矽烷、γ-環氧丙氧基丙基三甲氧基矽烷、γ-環氧丙氧基丙基甲基二乙氧基矽烷等。該等化合物可單獨或併用2種以上來使用。作為上述離子捕捉劑，例如可列舉：水滑石類、氫氧化鉍等。該等可單獨或併用2種以上來使用。 黏晶膜3之厚度(積層體之情形時為總厚度)並無特別限定，例如可自1～200 μm之範圍中選擇，較佳為5～100 μm，更佳為10～80 μm。 (切割片) 本實施形態之切割片11具有於基材1上積層黏著劑層2之構成。其中，本發明之切割片只要於冷擴張步驟中將黏晶膜3斷裂而進行單片化時能夠固定黏晶膜3，則不限定於該例。例如，可於基材與黏著劑層之間存在其他層。 (基材) 基材1較佳為具有紫外線透過性，成為切割黏晶膜10之強度基體。例如可列舉：低密度聚乙烯、直鏈狀聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、無規共聚聚丙烯、嵌段共聚聚丙烯、均聚丙烯、聚丁烯、聚甲基戊烯等聚烯烴、乙烯-乙酸乙烯酯共聚物、離聚物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(無規、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚胺基甲酸酯、聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯等聚酯、聚碳酸酯、聚醯亞胺、聚醚醚酮、聚醯亞胺、聚醚醯亞胺、聚醯胺、全芳香族聚醯胺、聚苯硫醚、芳綸(紙)、玻璃、玻璃布、氟樹脂、聚氯乙烯、聚偏二氯乙烯、纖維素系樹脂、有機矽樹脂、金屬(箔)、紙等。 另外，作為基材1之材料，可列舉上述樹脂之交聯體等聚合物。上述塑膠膜可無拉伸地使用，亦可使用根據需要實施單軸或雙軸拉伸處理之塑膠膜。利用藉由拉伸處理等賦予熱收縮性之樹脂片，於冷擴張後使基材1之半導體晶圓之外周部分熱收縮(熱擴張)，藉此能夠擴大附黏晶膜3之半導體晶片5彼此之間隔，從而實現半導體晶片5之回收的容易化。 對於基材1之表面，為了提高與鄰接之層的密接性、保持性等，可實施慣用之表面處理例如鉻酸處理、臭氧暴露、火焰暴露、高壓電擊暴露、離子化輻射線處理等化學或物理處理、利用底塗劑(例如後述之黏著物質)進行之塗佈處理。基材1可適宜選擇同種或異種之基材而使用，亦可根據需要使用將多種摻合而成的基材。另外，為了對基材1賦予抗靜電能力，可於基材1上設置包含金屬、合金、該等之氧化物等的厚度為30～500 Å左右之導電性物質的蒸鍍層。基材1可為單層或2種以上之多層。 基材1之厚度並無特別限定，可適宜決定，通常為5～200 μm左右。 (黏著劑層) 黏著劑層2較佳為藉由70℃～140℃之加熱而發泡，更佳為藉由70℃～120℃之加熱而發泡，進而較佳為藉由70℃～100℃之加熱而發泡。若黏著劑層2係藉由70℃～140℃之加熱而發泡之層，則藉由因加熱引起之發泡而使黏著力降低時，能夠抑制黏晶膜3之反應進行，能夠將因加熱引起之黏晶膜3之物性變化抑制為最小限度。 藉由加熱而發泡之溫度之測定方法依據實施例記載之方法。 如上所述，黏著劑層2包含下述丙烯酸系聚合物A及發泡劑。 丙烯酸系聚合物A：由以50重量%以下之範圍內含有CH2 =CHCOOR1 (式中，R1 係碳數為6～10之烷基)所示之丙烯酸酯之單體組合物獲得的丙烯酸系聚合物。 作為上述CH2 =CHCOOR1 所示之丙烯酸酯，具體而言，例如可列舉：丙烯酸己酯、丙烯酸庚酯、丙烯酸辛酯、丙烯酸異辛酯、丙烯酸2-乙基己酯、丙烯酸壬酯、丙烯酸異壬酯、丙烯酸癸酯、丙烯酸異癸酯等。其中，特別較佳為烷基之碳數為8～9之丙烯酸烷基酯，最佳為丙烯酸2-乙基己酯、丙烯酸異辛酯。上述CH2 =CHCOOR1 所示之丙烯酸酯可單獨使用或組合使用2種以上。上述CH2 =CHCOOR1 所示之丙烯酸酯可為直鏈狀之丙烯酸烷基酯、支鏈狀之丙烯酸烷基酯中任意形態的丙烯酸烷基酯。 上述CH2 =CHCOOR1 所示之丙烯酸酯之含量相對於用以獲得丙烯酸系聚合物A之單體成分總量為50重量%以下，較佳為10重量%～40重量%之範圍內，更佳為15重量%～30重量%之範圍內。 上述CH2 =CHCOOR1 所示之丙烯酸酯之含量為上述數值範圍內，因此對黏晶膜3之糊劑殘留較少，表現出良好之剝離性。 作為用以獲得丙烯酸系聚合物A之除上述CH2 =CHCOOR1 所示之丙烯酸酯以外的單體成分，例如可列舉：CH2 =CHCOOR2 (式中，R2 係碳數為1～5之烷基)所示之丙烯酸酯。具體而言，可列舉：丙烯酸甲酯、丙烯酸乙酯、丙烯酸丙酯、丙烯酸異丙酯、丙烯酸丁酯、丙烯酸異丁酯、丙烯酸第二丁酯、丙烯酸第三丁酯、丙烯酸戊酯、丙烯酸異戊酯。作為除上述CH2 =CHCOOR1 所示之丙烯酸酯以外的單體成分，於使用CH2 =CHCOOR2 所示之丙烯酸酯之情形時，容易調整化學性質、物理性質。 上述CH2 =CHCOOR2 所示之丙烯酸酯之含量相對於用以獲得丙烯酸系聚合物A之單體成分總量，較佳為20重量%～90重量%之範圍內，更佳為30重量%～80重量%之範圍內。 另外，作為用以獲得丙烯酸系聚合物A之除上述CH2 =CHCOOR1 所示之丙烯酸酯以外的單體成分，可列舉：含羥基單體。具體而言，作為上述含羥基單體，例如可列舉：(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯、(甲基)丙烯酸(4-羥基甲基環己基)甲酯等。 上述丙烯酸系聚合物A可以改性凝聚力、耐熱性等為目的而根據需要包含與能與上述CH2 =CHCOOR1 所示之丙烯酸酯、或上述CH2 =CHCOOR2 所示之丙烯酸酯共聚的其他單體成分(有時稱為「能共聚之其他單體成分」)相對應之單元。其中，較佳為不使用含羧基單體。若使用含羧基單體，則該羧基與黏晶膜中之環氧樹脂的環氧基發生反應，從而黏著劑層與黏晶膜之接著性變高，兩者之剝離性降低。作為此種含羧基單體，可列舉：丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧基乙酯、(甲基)丙烯酸羧基戊酯、衣康酸、馬來酸、富馬酸、巴豆酸等。 作為能共聚之其他單體成分，例如可列舉：甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸丙酯、甲基丙烯酸異丙酯、甲基丙烯酸丁酯、甲基丙烯酸異丁酯、甲基丙烯酸第二丁酯、甲基丙烯酸第三丁酯等甲基丙烯酸酯；馬來酸酐、衣康酸酐等酸酐單體；苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺丙酯、(甲基)丙烯醯氧基萘磺酸等含磺酸基單體；2-羥基乙基丙烯醯基磷酸酯等含磷酸基單體；苯乙烯、乙烯基甲苯、α-甲基苯乙烯等苯乙烯系單體；乙烯、丁二烯、異戊二烯、異丁烯等烯烴或二烯類；氯乙烯等含鹵素原子單體；氟(甲基)丙烯酸酯等含氟原子單體；丙烯醯胺、丙烯腈等。 能共聚之其他單體成分可使用1種或2種以上。該等能共聚之單體之使用量較佳為全部單體成分之40重量%以下，更佳為30重量%以下。 上述丙烯酸系聚合物A係藉由將單一單體或2種以上之單體混合物供於聚合而獲得。聚合以溶液聚合、乳液聚合、塊狀聚合、懸浮聚合等任意方式進行均可。就防止對清潔之被接著體之污染等方面而言，較佳為低分子量物質之含量較少。就該方面而言，丙烯酸系聚合物A之重量平均分子量較佳為35萬～100萬，進而較佳為45萬～80萬左右。 另外，黏著劑層中亦可為了調整黏著力而適宜地採用外部交聯劑。作為外部交聯方法之具體方法，可列舉：添加多異氰酸酯化合物、環氧化合物、氮丙啶化合物、三聚氰胺系交聯劑等所謂交聯劑並使其反應的方法。於使用外部交聯劑之情形時，其使用量根據與欲交聯之基礎聚合物之平衡、進而根據作為黏著劑之使用用途而適當確定。通常，相對於上述基礎聚合物100重量份，較佳為調配5重量份以下，進而較佳為調配0.1～5重量份。進而，黏著劑中，除了上述成分以外，亦可根據需要使用先前公知之各種增黏劑、防老化劑等添加劑。 黏著劑層2如上所述含有發泡劑。於自切割片11剝離黏晶膜3時，至少局部地加熱黏著劑層2，使發泡劑發泡及/或膨脹。 藉此，黏著劑層2至少局部膨脹，黏著面變形為凹凸狀，黏著劑層2與黏晶膜3之接著面積減少。藉由以上，兩者間之接著力減少，能夠自切割片11剝離黏晶膜3。 (發泡劑) 作為上述發泡劑，並無特別限制，可自公知之發泡劑中適當選擇。發泡劑可單獨使用或組合使用2種以上。作為發泡劑，可適宜地使用熱膨脹性微球。 (熱膨脹性微球) 作為熱膨脹性微球，並無特別限制，可自公知之熱膨脹性微球(各種無機系熱膨脹性微球、或有機系熱膨脹性微球等)中適當選擇。作為熱膨脹性微球，就混合操作容易之觀點等而言，能夠適宜地使用微膠囊化之發泡劑。作為此種熱膨脹性微球，例如可列舉使異丁烷、丙烷、戊烷等容易藉由加熱而氣化並膨脹之物質內含於具有彈性之殼內而獲得的微球等。上述殼較多用熱熔融性物質、或因熱膨脹而破壞之物質來形成。作為形成上述殼之物質，例如可列舉：偏二氯乙烯-丙烯腈共聚物、聚乙烯醇、聚乙烯醇縮丁醛、聚甲基丙烯酸甲酯、聚丙烯腈、聚偏二氯乙烯、聚碸等。 熱膨脹性微球可利用慣用之方法例如凝聚法、或界面聚合法等製造。再者，於熱膨脹性微球中，例如可使用松本油脂製藥股份有限公司製造之商品名「Matsumoto Microsphere」的系列(例如，商品名「Matsumoto Microsphere F30」、商品名「Matsumoto Microsphere F301D」、商品名「Matsumoto Microsphere F50D」、商品名「Matsumoto Microsphere F501D」、商品名「Matsumoto Microsphere F80SD」、商品名「Matsumoto Microsphere F80VSD」等)、以及Expancell公司製造之商品名「051DU」、商品名「053DU」、商品名「551DU」、商品名「551-20DU」、商品名「551-80DU」等市售品。 再者，於使用熱膨脹性微球作為發泡劑之情形時，作為該熱膨脹性微球之粒徑(平均粒徑)，可根據黏著劑層2之厚度等適當選擇。作為熱膨脹性微球之平均粒徑，例如，可自100 μm以下(較佳為80 μm以下，進而較佳為1 μm～50 μm，特別是1 μm～30 μm)之範圍中選擇。再者，熱膨脹性微球之粒徑之調整可於熱膨脹性微球之生成過程中進行，亦可於生成後利用分級等方法進行。作為熱膨脹性微球，較佳為粒徑整齊。 (其他發泡劑) 本實施形態中，作為發泡劑，亦可使用除熱膨脹性微球以外之發泡劑。作為此種發泡劑，可適當選擇使用各種無機系發泡劑、或有機系發泡劑等各種發泡劑。作為無機系發泡劑之代表例，例如可列舉：碳酸銨、碳酸氫銨、碳酸氫鈉、亞硝酸銨、硼氫化鈉、各種疊氮化物類等。 另外，作為有機系發泡劑之代表例，例如可列舉：水；三氯一氟甲烷、二氯一氟甲烷等氟氯化烷烴系化合物；偶氮二異丁腈、偶氮二甲醯胺、偶氮二羧酸鋇等偶氮系化合物；對甲苯磺醯肼、二苯碸-3,3'-二磺醯肼、4,4'-氧雙(苯磺醯肼)、烯丙基雙(磺醯肼)等肼系化合物；對甲苯磺醯胺基脲、4,4'-氧雙(苯磺醯胺基脲)等胺基脲系化合物；5-嗎啉-1,2,3,4-噻三唑等三唑系化合物；N,N'-二亞硝基五亞甲基四胺、N,N'-二甲基-N,N'-二亞硝基對苯二甲醯胺等N-亞硝基系化合物等。 本實施形態中，為了藉由加熱處理而使黏著劑層2之接著力高效且穩定地降低，較佳為，具有直至體積膨脹率達到5倍以上、尤其7倍以上、特別是10倍以上為止不會破裂之適度之強度的發泡劑。 發泡劑(熱膨脹性微球等)之調配量可根據黏著劑層之膨脹倍率、或接著力之降低性等適當設定，通常相對於形成黏著劑層之基礎聚合物100重量份例如為1重量份～150重量份(較佳為10重量份～130重量份，進而較佳為25重量份～100重量份)。 再者，作為使發泡劑發泡之方法(即，使熱膨脹性黏著劑層熱膨脹之方法)，可自公知之加熱發泡方法中適當選擇來採用。 黏著劑層2之厚度並無特別限定，就防止晶片切斷面之缺陷、或黏晶膜3之固定保持之兼顧性等方面而言，較佳為1～50 μm左右，更佳為2～30 μm，進而較佳為5～25 μm。 上述切割黏晶膜10之黏晶膜3較佳為被隔離膜保護(未圖示)。隔離膜於供於實用為止具有作為用以保護黏晶膜3之保護材料的功能。另外，隔離膜亦可作為將黏晶膜3轉印於黏著劑層2時之支持基材使用。隔離膜於將工件黏著至切割黏晶膜之黏晶膜3上時被剝離。作為隔離膜，亦可使用聚對苯二甲酸乙二酯(PET)、聚乙烯、聚丙烯、或利用氟系剝離劑、長鏈烷基丙烯酸酯系剝離劑等剝離劑進行表面塗覆之塑膠膜、或紙等。 本實施形態之切割黏晶膜10例如如下所述地製作。 首先，對於基材1，可利用先前公知之製膜方法進行製膜。作為該製膜方法，例如可例示壓延製膜法、於有機溶劑中之澆鑄法、於密閉體系中之吹脹擠出法、T膜擠出法、共擠出法、乾式層壓法等。 繼而，於基材1上塗佈黏著劑組合物溶液而形成塗佈膜後，使該塗佈膜於特定條件下乾燥(根據需要使其加熱交聯)，形成前驅體層。作為塗佈方法，並無特別限定，例如可列舉：輥塗覆、絲網塗覆、凹版塗覆等。另外，作為乾燥條件，例如於乾燥溫度80～150℃、乾燥時間0.5～5分鐘之範圍內進行。另外，亦可於隔離膜上塗佈黏著劑組合物而形成塗佈膜後，於上述乾燥條件下使塗佈膜乾燥來形成上述前驅體層。然後，於基材1上將上述前驅體層與隔離膜一併黏貼。藉此製作切割片前驅體。 黏晶膜3例如如下所述地製作。 首先，製作作為黏晶膜3之形成材料之接著劑組合物溶液。如上所述，於該接著劑組合物溶液中調配有上述接著劑組合物、或填料、其他各種添加劑等。 繼而，將接著劑組合物溶液以成為特定厚度之方式塗佈於基材隔離膜上而形成塗佈膜後，使該塗佈膜於特定條件下乾燥，形成黏晶膜3。作為塗佈方法並無特別限定，例如可列舉：輥塗覆、絲網塗覆、凹版塗覆等。另外，作為乾燥條件，例如於乾燥溫度70～160℃、乾燥時間1～5分鐘之範圍內進行。另外，亦可於隔離膜上塗佈黏著劑組合物溶液而形成塗佈膜後，於上述乾燥條件下使塗佈膜乾燥而形成黏晶膜3。然後，將黏晶膜3與隔離膜一併黏貼於基材隔離膜上。 繼而，分別自上述切割片前驅體及黏晶膜3剝離隔離膜，以黏晶膜3與黏著劑層成為黏貼面之方式將兩者黏貼。黏貼例如可藉由壓接來進行。此時，對層壓溫度並無特別限定，例如較佳為30～50℃，更佳為35～45℃。另外，對線壓並無特別限定，例如較佳為0.1～20 kgf/cm，更佳為1～10 kgf/cm。然後，可自基材1側照射紫外線。作為紫外線之照射量，較佳為使上述剝離力A及上述剝離力B在上述數值範圍內之量。具體之紫外線之照射量根據黏著劑層之組成、或厚度等而有所不同，例如較佳為50 mJ～500 mJ，更佳為100 mJ～300 mJ。藉由以上方式獲得本實施形態之切割黏晶膜。 (半導體裝置之製造方法) 繼而，一面參照圖2～圖7一面說明使用切割黏晶膜10之半導體裝置的製造方法。圖2～圖5為用以說明本實施形態之半導體裝置之一製造方法的剖面示意圖。首先，對半導體晶圓4之分割預定線4L照射雷射光，於分割預定線4L上形成改性區域。本方法為於半導體晶圓之內部對準聚光點，沿格子狀之分割預定線照射雷射光，藉由基於多光子吸收之燒蝕於半導體晶圓之內部形成改性區域的方法。作為雷射光照射條件，只要於以下之條件的範圍內進行適宜調整即可。 ＜雷射光照射條件＞ (A)雷射光 雷射光光源 半導體雷射光激發Nd：YAG雷射光 波長 1064 nm 雷射光點剖面積 3.14×10-8 cm2 振盪方式 Q開關脈衝 重複頻率 100 kHz以下 脈衝寬度 1 μs以下 輸出 1 mJ以下 雷射光品質 TEM00 偏光特性 直線偏光 (B)聚光用透鏡 倍率 100倍以下 NA 0.55 對雷射光波長之透過率 100%以下 (C)載置半導體基板之載置台之移動速度 280 mm/秒以下 再者，關於照射雷射光而於分割預定線4L上形成改性區域之方法，於日本專利第3408805號公報、日本專利特開2003-338567號公報中進行了詳細敍述，因此省略此處之詳細說明。 繼而，如圖3所示，將改性區域形成後之半導體晶圓4壓接於黏晶膜3上，將其接著保持而固定(安裝步驟)。本步驟係藉由壓接輥等擠壓機構一面擠壓一面進行。對安裝時之黏貼溫度並無特別限定，較佳為40～80℃之範圍內。其原因在於，能夠有效地防止半導體晶圓4之翹曲，並且能夠減少切割黏晶膜之伸縮的影響。 繼而，藉由對切割黏晶膜10施加拉伸張力，從而使半導體晶圓4與黏晶膜3於分割預定線4L上斷裂，形成半導體晶片5(冷擴張步驟)。本步驟中例如可使用市售之晶圓擴張裝置。具體而言，如圖4(a)所示，於黏貼有半導體晶圓4之切割黏晶膜10之黏著劑層2周邊部黏貼切割環31後，固定於晶圓擴張裝置32。繼而，如圖4(b)所示，使頂起部33上升，從而對切割黏晶膜11施加張力。 上述冷擴張步驟較佳為於0～-15℃之條件下執行，更佳為於-5～-15℃之條件下執行。由於上述冷擴張步驟係於0～-15℃之條件下執行，因此能夠適當地使黏晶膜3斷裂。 另外，於上述冷擴張步驟中，擴張速度(頂起部上升之速度)較佳為100～400 mm/秒，更佳為100～350 mm/秒，進而較佳為100～300 mm/秒。使擴張速度為100 mm/秒以上時，能夠容易地使半導體晶圓4與黏晶膜3大致同時斷裂。另外，使擴張速度為400 mm/秒以下時，能夠防止切割片11斷裂。 另外，於上述冷擴張步驟中，對於擴張量，較佳為擴張量為4～16 mm。上述擴張量可於上述數值範圍內根據形成之晶片尺寸進行適宜調整。使擴張量為4 mm以上時，能夠使半導體晶圓4及黏晶膜3之斷裂更容易。另外，使擴張量為16 mm以下時，能夠進而防止切割片11斷裂。 如此，藉由對切割黏晶膜10施加拉伸張力，以半導體晶圓4之改性區域為起點，於半導體晶圓4之厚度方向產生斷裂，並且能夠使與半導體晶圓4密接之黏晶膜3斷裂，能夠獲得附黏晶膜3之半導體晶片5。 繼而，根據需要，進行熱擴張步驟。於熱擴張步驟中，對切割片11之較黏貼有半導體晶圓4之部分的更外側進行加熱而使其熱收縮。藉此，使半導體晶片5彼此之間隔擴大。對熱擴張步驟中之條件並無特別限定，較佳為設為擴張量4～16 mm、加熱溫度200～260℃、加熱距離2～30 mm、旋轉速度3°/秒～10°/秒之範圍內。 繼而，根據需要進行清潔步驟。於清潔步驟中，將附黏晶膜3之半導體晶片5呈被固定狀態之切割片11安裝於旋塗器上。繼而，一面向半導體晶片5滴加清洗液一面使旋塗器旋轉。藉此，對半導體晶片5之表面進行清洗。作為清洗液，例如可列舉水。旋塗器之旋轉速度、或旋轉時間根據清洗液之種類等而有所不同，例如可設為旋轉速度400～3000 rpm、旋轉時間1～5分鐘。 繼而，為了將接著固定於切割黏晶膜10之半導體晶片5剝離，進行半導體晶片5之拾取(拾取步驟)。作為拾取之方法，並無特別限定，可採用先前公知之各種方法。例如可列舉利用針將各個半導體晶片5自切割黏晶膜10側頂起，利用拾取裝置拾取被頂起之半導體晶片5的方法等。 拾取係於對黏著劑層2進行特定之熱處理而使其熱膨脹之後進行。藉此，黏著劑層2對於黏晶膜3之黏著力(接著力)降低，半導體晶片5之剝離變得容易。其結果，能夠無損傷地拾取半導體晶片5。再者，作為加熱處理中能使用之加熱裝置，並無特別限定，例如可列舉加熱裝置(熱板、熱風乾燥機、近紅外線燈、空氣乾燥機等)等。作為加熱溫度，可列舉70～140℃之加熱。 繼而，如圖5所示，經由黏晶膜3將拾取之半導體晶片5晶片接合於被接著體6上(臨時固定步驟)。作為被接著體6，可列舉：引線框架、TAB膜、基板或另外製作之半導體晶片等。被接著體6例如可為容易變形之變形型被接著體，亦可為不易變形之非變形型被接著體(半導體晶圓等)。 作為上述基板，可使用先前公知之基板。另外，作為上述引線框架，可使用Cu引線框架、42Alloy引線框架等金屬引線框架、或包含玻璃環氧、BT(雙馬來醯亞胺-三嗪)、聚醯亞胺等之有機基板。但是，本發明不限定於此，亦包含能將半導體元件接著固定、與半導體元件電連接而使用之電路基板。 黏晶膜3之臨時固定時之於25℃下的剪切接著力相對於被接著體6較佳為0.2 MPa以上，更佳為0.2～10 MPa。若黏晶膜3之剪切接著力為至少0.2 MPa以上，則於引線接合步驟時，很少因該步驟中之超音波振動、或加熱而於黏晶膜3與半導體晶片5或被接著體6之接著面發生偏移變形。即，很少由於引線接合時之超音波振動而導致半導體元件移動，藉此會防止引線接合之成功率降低。另外，黏晶膜3之臨時固定時之於175℃之剪切接著力相對於被接著體6較佳為0.01 MPa以上，更佳為0.01～5 MPa。 繼而，進行用接合引線7將被接著體6之端子部(內部引線)之前端與半導體晶片5上的電極墊(未圖示)電連接之引線接合(引線接合步驟)。作為上述接合引線7，例如使用金線、鋁線或銅線等。對於進行引線接合時之溫度，於80～250℃、較佳為80～220℃之範圍內進行。另外，對於其加熱時間，進行數秒～數分鐘。接線係藉由於加熱至成為上述溫度範圍內之狀態下，藉由併用基於超音波之振動能量與基於施加加壓之壓接能量來進行。本步驟係於不進行黏晶膜3之熱硬化下執行。另外，於本步驟之過程中，不會藉由黏晶膜3導致半導體晶片5與被接著體6固定。 繼而，利用封裝樹脂8將半導體晶片5封裝(封裝步驟)。本步驟係為了保護搭載於被接著體6之半導體晶片5、或接合引線7而進行。本步驟係藉由用模具將封裝用之樹脂成型來進行。作為封裝樹脂8，例如使用環氧系樹脂。對於樹脂封裝時之加熱溫度，通常於175℃下進行60～90秒，但本發明不限定於此，例如可於165～185℃下進行數分鐘硬化(cure)。藉此，使封裝樹脂硬化，並且經由黏晶膜3使半導體晶片5與被接著體6固定。即，於本發明中，即便於不進行後述後硬化步驟之情形時，亦能於本步驟中實現基於黏晶膜3之固定，能夠有助於減少製造步驟數量及縮短半導體裝置之製造時間。 於上述後硬化步驟中，使於上述封裝步驟中硬化不足之封裝樹脂8完全硬化。即便係於黏晶膜3於封裝步驟中未完全熱硬化之情形時，於本步驟中，亦能實現黏晶膜3與封裝樹脂8一併之完全熱硬化。本步驟中之加熱溫度根據封裝樹脂之種類而有所不同，例如為165～185℃之範圍內，加熱時間為0.5～8小時左右。 上述實施形態中，針對將附黏晶膜3之半導體晶片5臨時固定於被接著體6後，於不使黏晶膜3完全熱硬化之狀態下進行引線接合步驟之情形進行說明。然而，於本發明中，亦可進行如下之通常的晶片接合步驟：於將附黏晶膜3之半導體晶片5臨時固定於被接著體6上之後使黏晶膜3熱硬化，然後進行引線接合步驟。 再者，本發明之切割黏晶膜亦可適宜地用於將複數個半導體晶片積層而進行三維安裝之情形。此時，亦可於半導體晶片間積層黏晶膜及間隔物，亦可於半導體晶片間僅積層黏晶膜而不積層間隔物，可根據製造條件、或用途等進行適宜變更。 繼而，以下對於採用於半導體晶圓之表面形成槽後進行背面磨削之步驟的半導體裝置之製造方法進行說明。 圖6、圖7為用以說明本實施形態之半導體裝置之另一製造方法的剖面示意圖。首先，如圖6(a)所示，用旋轉刀片(blade)41於半導體晶圓4之表面4F形成未到達背面4R之槽4S。再者，於形成槽4S時，半導體晶圓4被未圖示之支持基材支持。槽4S之深度可根據半導體晶圓4之厚度、或擴張之條件進行適宜設定。繼而，如圖6(b)所示，以表面4F抵接之方式使半導體晶圓4被保護基材42支持。然後，用磨削磨石45進行背面磨削，使槽4S自背面4R露出。再者，保護基材42向半導體晶圓之黏貼可使用先前公知之黏貼裝置，背面磨削亦可使用先前公知之磨削裝置。 繼而，如圖7所示，於切割黏晶膜10上壓接露出了槽4S之半導體晶圓4，將其接著保持而固定(臨時固定步驟)。然後，剝離保護基材42，利用晶圓擴張裝置32對切割黏晶膜10施加張力。藉此，使黏晶膜3斷裂，形成半導體晶片5(晶片形成步驟)。再者，晶片形成步驟中之溫度、擴張速度、擴張量與照射雷射光而於分割預定線4L上形成改性區域之情形同樣。以後之步驟由於與照射雷射光而於分割預定線4L上形成之改性區域之情形同樣，因此省略此處之說明。 本發明之半導體裝置之製造方法只要使半導體晶圓與黏晶膜同時於冷擴張步驟中斷裂、或僅使黏晶膜於冷擴張步驟中斷裂，則不限定於上述實施形態。作為其他實施形態，例如，亦可如圖6(a)所示，用旋轉刀片41於半導體晶圓4之表面4F形成未到達背面4R之槽4S後，於切割黏晶膜上壓接露出了槽4S之半導體晶圓4，將其接著保持而固定(臨時固定步驟)。然後，利用晶圓擴張裝置對切割黏晶膜施加張力。藉此，可於槽4S之部分中，使半導體晶圓4與黏晶膜3斷裂，形成半導體晶片5。 上述實施形態中，對於本發明之接著劑層為黏晶膜3之情形進行說明，但是，作為本發明之接著劑層，只要能夠於切割片上形成並使用，則無特別限定，例如可列舉倒裝晶片型半導體背面用膜、底部填充片。 倒裝晶片型半導體背面用膜係指，於被倒裝晶片連接之半導體晶片之背面(與倒裝晶片連接面相反之側的面)上黏貼的膜。 本發明之接著劑層為倒裝晶片型半導體背面用膜之情形時，可於以具有作為倒裝晶片型半導體背面用膜之功能之程度變更組成、或含量的基礎上採用與黏晶膜3同樣之構成。 底部填充片係指，用以填充基板與於基板上倒裝晶片連接之半導體晶片之空隙的片。 於本發明之接著劑層為底部填充片之情形時，可於以具有作為底部填充片之功能的程度變更組成、或含量之基礎上採用與黏晶膜3同樣之構成。 實施例 以下，用實施例對本發明進行詳細說明，但本發明只要不超過其要旨則不限定於以下之實施例。另外，各例中，只要未特別說明，份均為重量基準。 (實施例1) ＜切割片之製作＞ 準備熱膨脹性微球A(Matsumoto Microsphere F-50D：松本油脂製藥部分有限公司製造：平均粒徑13.4 μm)。 另一方面，製備於丙烯酸2-乙基己酯-丙烯酸乙酯-甲基丙烯酸甲酯(以單體之比率計，丙烯酸2-乙基己酯：30重量份、丙烯酸乙酯：70重量份、甲基丙烯酸甲酯：5重量份)共聚物系黏著劑100重量份(調配聚胺基甲酸酯系交聯劑2重量份)中調配有上述熱膨脹性微球A30重量份之甲苯溶液，以乾燥後之厚度為45 μm之方式塗佈於厚度50 μm的PET膜之單面進行剝離處理而成的面上並使其乾燥，獲得黏著劑層A。將所獲得之黏著劑層黏貼於80 μm之聚烯烴膜，獲得切割片A。 ＜黏晶膜之製作＞ 相對於丙烯酸系樹脂(商品名「SG-P3」Nagase ChemteX Corporation製造，重量平均分子量850000)100份，使苯酚樹脂(商品名「MEH-7851ss」，明和化成股份有限公司製造)12份、填料(商品名「SE-2050MC」，Admatechs Co. Ltd.製造，平均粒徑0.5 μm)100份溶解於甲基乙基酮，製備固形物成分濃度為18重量%之接著劑組合物溶液A。 將接著劑組合物溶液A塗佈於進行有機矽脫模處理之厚度為50 μm之包含聚對苯二甲酸乙二酯膜的脫模處理膜(剝離襯墊)上後，於130℃下進行2分鐘乾燥。藉此，獲得厚度(平均厚度)10 μm之黏晶膜A。 ＜切割黏晶膜之製作＞ 自切割片A剝離PET膜，於露出之黏著劑層上黏貼黏晶膜A。黏貼中使用手壓輥。藉由以上，獲得切割黏晶膜A。 (實施例2) ＜切割片之製作＞ 準備熱膨脹性微球B(Matsumoto Microsphere FN-100SS：松本油脂製藥股份有限公司製造：平均粒徑8.5 μm)。 另一方面，製備於丙烯酸2-乙基己酯-丙烯酸乙酯-甲基丙烯酸甲酯(以單體之比率計，丙烯酸2-乙基己酯：30重量份、丙烯酸乙酯：70重量份、甲基丙烯酸甲酯：5重量份)共聚物系黏著劑100重量份(調配聚胺基甲酸酯系交聯劑2重量份)中調配有上述熱膨脹性微球B30重量份之甲苯溶液，以乾燥後之厚度為45 μm之方式塗佈於厚度50 μm之PET膜的單面進行剝離處理而成的面上並使其乾燥，獲得黏著劑層B。將所得之黏著劑層黏貼於80 μm之聚烯烴膜，獲得切割片B。 ＜切割黏晶膜之製作＞ 準備與實施例1中使用之黏晶膜A相同的黏晶膜。繼而，自切割片B剝離PET膜，於露出之黏著劑層上黏貼黏晶膜A。黏貼中使用手壓輥。藉由以上，獲得切割黏晶膜B。 (實施例3) ＜黏晶膜之製作＞ 相對於丙烯酸系樹脂(商品名「SG-P3」Nagase ChemteX Corporation製造，重量平均分子量850000)100份，使苯酚樹脂(商品名「MEH-7851-4H」，明和化成股份有限公司製造)12份、填料(商品名「SE-2050MC」，Admatechs Co. Ltd.製造，平均粒徑0.5 μm)：170份溶解於甲基乙基酮，製備固形物成分濃度為18重量%之接著劑組合物溶液B。 將接著劑組合物溶液B塗佈於進行有機矽脫模處理之厚度為50 μm之包含聚對苯二甲酸乙二酯膜的脫模處理膜(剝離襯墊)上後，於130℃下進行2分鐘乾燥。藉此，獲得厚度(平均厚度)10 μm之黏晶膜B。 ＜切割黏晶膜之製作＞ 自切割片A剝離PET膜，於露出之黏著劑層上黏貼黏晶膜B。黏貼中使用手壓輥。藉由以上，獲得切割黏晶膜C。 (比較例1) ＜切割片之製作＞ 製備於丙烯酸2-乙基己酯-丙烯酸乙酯-甲基丙烯酸甲酯(以單體之比率計，丙烯酸2-乙基己酯：60重量份、丙烯酸乙酯：40重量份、甲基丙烯酸甲酯：5重量份)共聚物系黏著劑100重量份(調配聚胺基甲酸酯系交聯劑2重量份)中調配有上述熱膨脹性微球A30重量份之甲苯溶液，以乾燥後之厚度為45 μm的方式塗佈於厚度50 μm之PET膜之單面進行剝離處理而成的面上並使其乾燥，獲得黏著劑層C。將所得之黏著劑層黏貼於80 μm之聚烯烴膜，獲得切割片C。 ＜切割黏晶膜之製作＞ 準備與實施例1中使用之黏晶膜A相同之黏晶膜。繼而，自切割片C剝離PET膜，於露出之黏著劑層上黏貼黏晶膜A。黏貼中使用手壓輥。藉由以上，獲得切割黏晶膜D。 (比較例2) ＜黏晶膜之製作＞ 相對於丙烯酸系樹脂(商品名「SG-70L」Nagase ChemteX Corporation製造，重量平均分子量900,000)100份，使環氧樹脂A(商品名「KI-3000」東都化成股份有限公司製造)200份、環氧樹脂B(商品名「JER YL-980」三菱化學股份有限公司製造)180份、苯酚樹脂(商品名「MEH-7800H」明和化成股份有限公司製造)360份、填料(商品名「SE-2050MC」Admatechs Co. Ltd.製造，平均粒徑0.5 μm)830份溶解於甲基乙基酮，製備固形物成分濃度為18重量%之接著劑組合物溶液C。 將接著劑組合物溶液C塗佈於進行有機矽脫模處理之厚度為50 μm的包含聚對苯二甲酸乙二酯膜之脫模處理膜(剝離襯墊)上後，於130℃下進行2分鐘乾燥。藉此，獲得厚度(平均厚度)10 μm之黏晶膜C。 ＜切割黏晶膜之製作＞ 準備與實施例1中使用之切割片A相同的切割片。繼而，自切割片A剝離PET膜，於露出之黏著劑層上黏貼黏晶膜C。黏貼中使用手壓輥。藉由以上，獲得切割黏晶膜E。 (比較例3) ＜切割黏晶膜之製作＞ 準備與比較例1中使用之切割片C相同的切割片。另外，準備與比較例2中使用之黏晶膜C相同的切割片。繼而，自切割片C剝離PET膜，於露出之黏著劑層上黏貼黏晶膜C。黏貼中使用手壓輥。藉由以上，獲得切割黏晶膜F。 [黏著劑層之因加熱而發泡之溫度A的測定] 將切割黏晶膜切成1cm見方，使基材面朝下，於加熱至特定溫度之熱板上放置20秒。經過20秒後自熱板上取出，恢復至室溫後，測量積層帶之厚度。加熱試驗係自低溫側起逐次升高5℃來進行，將厚度差達到3 μm以上之最初溫度設為因加熱而發泡的溫度A。 將結果示於表1。 [黏晶膜之硬化前之溫度A下之儲存彈性模數的測定、及黏晶膜之硬化前之23℃下的儲存彈性模數之測定] 將黏晶膜積層至厚度200 μm。繼而，用切割刀切成寬度10 mm、長度40 mm之矩形條狀。然後，用固體黏彈性測定裝置(RSA-G2，TA Instruments Japan Ltd.製造)測定儲存彈性模數。測定條件如下所述。 於-40℃下保持5分鐘之後開始測定。自所得之儲存彈性模數之資料讀取23℃下之儲存彈性模數及溫度A下之儲存彈性模數。 將結果示於表1。 ＜測定條件＞ 測定溫度範圍：-40～260℃ 卡盤間距離20 mm 拉伸模式 頻率1 Hz 應變0.1% [黏著劑層發泡前之黏晶膜與黏著劑層之間的23℃下之剝離力的測定、以及黏著劑層發泡前之黏晶膜與黏著劑層之間的-15℃下之剝離力的測定] 於切割黏晶膜之黏晶膜面上黏貼強力黏著膠帶(日東電工股份有限公司製造，BT-315)，切成寬度100 mm、長度200 mm之尺寸。測定中使用拉伸試驗機(製造商名稱：SHIMADZU)。用上部卡盤夾具夾住基材與黏著劑層，用下部卡盤夾具夾住黏晶膜與強力黏著膠帶，以速度100 mm/分鐘、T型剝離進行剝離試驗。 測定溫度係於23℃與-15℃下進行。 將結果示於表1。 [使黏著劑層發泡後之23℃下之剝離力的測定] 於切割黏晶膜之黏晶膜面上黏貼強力黏著膠帶(日東電工股份有限公司製造，BT-315)，切成寬度100 mm、長度200 mm的尺寸。將製作之樣品懸掛於設定為溫度A的烘箱中，放置25秒，然後取出。測定中使用拉伸試驗機(製造商名稱：SHIMADZU)。用上部卡盤夾具夾住基材與黏著劑層，用下部卡盤夾具夾住黏晶膜與強力黏著膠帶，以速度100 mm/分鐘、T型剝離進行剝離試驗。 測定溫度係於23℃下進行。 將結果示於表1。 [拾取性評價] 使用東京精密股份有限公司製造之ML300-Integration作為雷射光加工裝置，於12英吋之半導體晶圓的內部對準聚光點，沿格子狀(10 mm×10 mm)之分割預定線照射雷射光，於半導體晶圓之內部形成改性區域。對於雷射光照射條件，如下所述地進行。 (A)雷射光 雷射光光源 半導體雷射光激發Nd：YAG雷射光 波長 1064 nm 雷射光點剖面積 3.14×10-8 cm2 振盪方式 Q開關脈衝 重複頻率 100 kHz 脈衝寬度 30 ns 輸出 20 μJ/脈衝 雷射光品質 TEM00 40 偏光特性 直線偏光 (B)聚光用透鏡 倍率 50倍 NA 0.55 對於雷射光波長之透過率 60% (C)載置半導體基板之載置台之移動速度 100 mm/秒 繼而，將背面研磨用保護帶黏貼於半導體晶圓之表面上，使用DISCO Corporation製之背面研磨機DGP8760，對背面進行磨削以使半導體晶圓之厚度成為30 μm。 繼而，使對實施例及比較例之切割黏晶膜進行基於雷射光之前處理的上述半導體晶圓及切割環黏貼。 繼而，使用DISCO Corporation製造之Die Separator DDS2300，進行半導體晶圓之切斷及切割片之熱收縮，藉此獲得樣品。具體而言，首先，用冷擴張單元，於擴張溫度-15℃、擴張速度200 mm/秒、擴張量12 mm之條件下將半導體晶圓切斷。 然後，用熱擴張單元，於擴張量10 mm、加熱溫度250℃、風量40 L/min、加熱距離20 mm、旋轉速度3°/sec之條件下使切割片熱收縮。 繼而，進行加熱。加熱於熱台(heat stage)上自基材側進行。加熱溫度設為溫度A，加熱時間設為20秒。藉此，使黏著劑層之黏著力降低。使用藉由以上獲得之樣品，進行拾取評價。具體而言，使用Die bonder SPA-300(Shinkawa Ltd.製造)，於以下之條件下進行拾取。將能夠全部拾取之情形記為◎，將拾取成功率為90%以上之情形記為〇，將拾取成功率不足90%之情形記為×，來進行評價。將結果示於表1。 ＜拾取條件＞ 針(pin)數：5 拾取高度：350 μm 拾取評價數：50個晶片 [表1] Hereinafter, a case where the dicing sheet-integrated adhesive film of the present invention is a dicing die-bond film will be described. That is, a case where the adhesive layer of the present invention is a sticky film will be described. (Cutting Viscosity Film) Hereinafter, the dicing viscous film of this embodiment will be described. FIG. 1 is a schematic cross-sectional view showing a dicing die-bonding film of this embodiment. As shown in FIG. 1, the dicing die-bonding film 10 has a structure in which a dicing die-bonding film 3 is laminated on a dicing sheet 11. The dicing sheet 11 has a structure in which an adhesive layer 2 is laminated on a base material 1. The adhesive film 3 is disposed on the adhesive layer 2. Furthermore, in this embodiment, the case where there is a portion 2b in the dicing sheet 11 that is not covered by the die attach film 3 is described, but the cut die attach film of the present invention is not limited to this example, and the die attach film may also be covered. The entire cutting sheet is laminated on the cutting sheet. The adhesive layer 2 includes the following acrylic polymer A and a foaming agent, and the viscous crystal film 3 includes a thermoplastic resin, and the content of the thermoplastic resin is within a range of 40% to 95% by weight relative to the entire resin component of the viscous film . Acrylic polymer A: contains CH in a range of 50% by weight or less 2 = CHCOOR 1 (Where, R 1 An acrylic polymer obtained from a monomer composition of an acrylic ester represented by an alkyl group having 6 to 10 carbon atoms. Since the adhesive layer 2 contains the above-mentioned acrylic polymer A, it is possible to firmly fix the adhered object (for example, a semiconductor wafer with an adhesive layer) before the foaming agent is foamed. In addition, since the adhesive layer 2 contains a foaming agent, unevenness is formed on the surface of the adhesive layer 2 by heating. As a result, it is possible to reduce the contact area with an object to be adhered (for example, a semiconductor wafer with an adhesive layer), and significantly reduce the adhesive force. That is, according to the dicing die-bonding film 10, the adhesive layer 2 contains the above-mentioned acrylic polymer A and a foaming agent. Therefore, it is possible to firmly fix the adhered object during invisible cutting, and to increase the adhesive force by heating when picking up. Significantly lowered so that the adhered object can be easily peeled off. The acrylic polymer A contains CH in a range of 50% by weight or less. 2 = CHCOOR 1 (Where, R 1 Since it is an acrylic polymer obtained from a monomer composition of an acrylic ester represented by an alkyl group having 6 to 10 carbon atoms, the paste residue on the viscous film 3 is small, and good peelability is exhibited. In addition, by setting the content of the thermoplastic resin of the sticky crystal film 3 within the above-mentioned numerical range, the storage elastic modulus at the temperature at which the adhesive layer 2 is foamed does not become too low, so it can be exhibited at the time of pickup Good peelability. In addition, by setting the content of the thermoplastic resin of the sticky film 3 within the above-mentioned numerical range, the influence of the movement of the low-molecular-weight components other than the thermoplastic resin into the adhesive layer is reduced, and good peeling can be exhibited when picked up. Sex. The peeling force at 23 ° C between the adhesive film 2 and the adhesive layer 2 before the adhesive layer 2 is foamed is preferably in a range of 1 N / 100 mm to 50 N / 100 mm, and more preferably 3 N / 100 mm to 40 N / 100 mm, and more preferably 5 N / 100 mm to 35 N / 100 mm. By setting the peeling force at 23 ° C between the adhesive film 3 and the adhesive layer 2 before the adhesive layer 2 is foamed to the above-mentioned value range, it is possible to prevent the wafer from scattering or grinding during dicing caused by the blade. Intrusion of shavings. In addition, the peeling force after the heat treatment can be efficiently reduced. The measurement method of the peeling force at 23 ° C. between the adhesive film 3 and the adhesive layer 2 before the adhesive layer 2 was foamed was in accordance with the method described in the examples. The peeling force at -15 ° C between the adhesive film 3 and the adhesive layer 2 before the adhesive layer 2 is foamed is preferably 1 N / 100 mm or more, more preferably 1.5 N / 100 mm or more, and further preferably 2 N / 100 mm or more. If the peeling force at -15 ° C between the adhesive film 2 and the adhesive layer 2 before the adhesive layer 2 is foamed is within the above-mentioned numerical range, the cutting property of the adhesive film 3 during stealth cutting is improved. The method for measuring the peeling force at -15 ° C between the adhesive film 3 and the adhesive layer 2 before the adhesive layer 2 was foamed was in accordance with the method described in the examples. The peeling force at 23 ° C between the adhesive film 3 and the adhesive layer 2 after foaming the adhesive layer 2 is preferably within a range of 0 N / 100 mm to 5 N / 100 mm, and more preferably 0 N / 100 mm to 3 N / 100 mm, and more preferably 0 N / 100 mm to 2 N / 100 mm. If the peeling force at 23 ° C. between the adhesive film 3 and the adhesive layer 2 after the adhesive layer 2 is foamed is within the above-mentioned numerical range, pickup can be performed well. (Crystalline film) When the temperature at which the adhesive layer 2 is foamed due to heating is set to temperature A, the storage elastic modulus at the temperature A before the viscous film 3 hardens is preferably in the range of 0.1 MPa to 50 MPa. It is more preferably within a range of 0.1 MPa to 40 MPa, and even more preferably within a range of 0.2 MPa to 40 MPa. If the storage elastic modulus of the viscous film 3 at a temperature A before hardening is 0.1 MPa or more, the foaming of the foaming agent of the adhesive layer 2 can appropriately reduce the viscosity of the adhesive layer 2 and the viscous film 3 Peeling force. Moreover, if the said storage elastic modulus is 50 MPa or less, the filling property of the space | gap at the time of wafer bonding will become favorable. The storage elastic modulus of the viscous crystal film 3 at 23 ° C before curing is preferably in the range of 10 MPa to 3400 MPa, more preferably in the range of 10 MPa to 3000 MPa, and even more preferably 20 MPa to 2500 MPa. Within range. If the storage elastic modulus at 23 ° C before curing of the viscous film 3 is 10 MPa or more, it can prevent the contact area of the adhesive layer 2 and the viscous film 3 from increasing when it returns to room temperature after thermal foaming. Large, can effectively reduce the contact area between the adhesive layer 2 and the adhesive film 3. In addition, if the storage elastic modulus is 3400 MPa or less, the flexibility of the dicing die-bond film 10 is improved, and the workability is excellent. As shown in FIG. 1, the layer configuration of the adhesive film 3 includes a layer configuration including a single-layer adhesive layer. In addition, in the present specification, a single layer refers to a layer including the same composition, and a layer including a plurality of layers including the same composition. However, the viscous crystal film in the present invention is not limited to this example. For example, it may be a multilayer structure in which two or more kinds of adhesives having different compositions are laminated. The die-casting film 3 contains a thermoplastic resin. In addition, the die-casting film 3 preferably contains a thermosetting resin. Examples of the thermosetting resin include a phenol resin, an amine resin, an unsaturated polyester resin, an epoxy resin, a polyurethane resin, a silicone resin, and a thermosetting polyimide resin. These resins can be used individually or in combination of 2 or more types. Particularly preferred is an epoxy resin that contains less ionic impurities and the like that would corrode semiconductor elements. Moreover, as a hardener of an epoxy resin, a phenol resin is preferable. The epoxy resin is not particularly limited as long as it is a resin generally used as an adhesive composition, and for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, and hydrogenated bisphenol A can be used. Type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, o-cresol novolac type, trihydroxyphenylmethane type, tetraphenylolethane type and other bifunctional rings Epoxy resin or polyfunctional epoxy resin, hydantoin type, isocyanurate triglycidyl type, glycidyl amine type and other epoxy resins. These can be used individually or in combination of 2 or more types. Among these epoxy resins, novolac-type epoxy resin, biphenyl-type epoxy resin, trishydroxyphenylmethane-type resin, and tetrahydroxyphenylethane-type epoxy resin are particularly preferred. The reason is that these epoxy resins are rich in reactivity with a phenol resin as a hardener, and are excellent in heat resistance and the like. The phenol resin functions as a hardener of the epoxy resin, and examples thereof include a phenol novolak resin, a phenol aralkyl resin, a cresol novolac resin, a third butyl novolac resin, and a nonylphenol novolac resin. Novolac-type phenol resin, soluble phenol-type phenol resin, polyoxystyrene such as polyparaoxystyrene, etc. These can be used individually or in combination of 2 or more types. Among these phenol resins, phenol novolak resin and phenol aralkyl resin are particularly preferred. This is because the connection reliability of the semiconductor device can be improved. Regarding the blending ratio of the epoxy resin and the phenol resin, for example, it is suitable to blend such that the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents relative to 1 equivalent of the epoxy group in the epoxy resin component. More preferably, it is 0.8 to 1.2 equivalents. That is, the reason is that if the blending ratio of the two deviates from the above range, a sufficient curing reaction cannot be performed, and the characteristics of the epoxy resin cured product tend to deteriorate. Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, and polybutylene Diene resin, polycarbonate resin, thermoplastic polyimide resin, 6-nylon, or 6,6-nylon polyamine resin, phenoxy resin, acrylic resin, PET, or saturated polyester resin such as PBT , Polyamidoamine imine resin, or fluororesin. These thermoplastic resins can be used individually or in combination of 2 or more types. Among these thermoplastic resins, an acrylic resin having few ionic impurities, high heat resistance, and ensuring the reliability of a semiconductor element is particularly preferred. The acrylic resin is not particularly limited, and examples thereof include one or two esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. Polymers (acrylic copolymers) and the like as components. Examples of the alkyl group include methyl, ethyl, propyl, isopropyl, n-butyl, third butyl, isobutyl, pentyl, isopentyl, hexyl, heptyl, cyclohexyl, 2-ethylhexyl, octyl, isooctyl, nonyl, isononyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, stearyl, ten Octyl, or dodecyl. Among the above-mentioned acrylic resins, an acrylic copolymer is particularly preferred for reasons of improving cohesion. Examples of the acrylic copolymer include a copolymer of ethyl acrylate and methyl methacrylate, a copolymer of acrylic acid and acrylonitrile, and a copolymer of butyl acrylate and acrylonitrile. The other monomers forming the polymer are not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Carboxy-containing monomers such as acids, anhydride monomers such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate Ester, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or acrylic acid (4- Hydroxyl-containing monomers such as hydroxymethylcyclohexyl) methyl ester, styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, (meth) acrylamido Sulfonic acid group-containing monomers such as propanesulfonic acid, sulfopropyl (meth) acrylate or (meth) acryloxynaphthalenesulfonic acid; various phosphate-group-containing monomers such as 2-hydroxyethylpropenyl phosphate; Epoxy group-containing monomers such as glycidyl (meth) acrylate. Among these, an epoxy group-containing monomer is preferably used from the viewpoint of reliability. As described above, the content of the thermoplastic resin is within a range of 40% by weight to 95% by weight based on the entire resin component of the sticky film. The content ratio is preferably within a range of 40% to 93% by weight, and more preferably within a range of 42% to 93% by weight. In addition, the content of the thermoplastic resin is preferably within a range of 30% to 90% by weight, more preferably within a range of 35% to 88% by weight, and more preferably 40% to 86% by weight with respect to the entire sticky crystal film. Within the range of%. By setting the content of the thermoplastic resin of the viscous crystal film 3 within the above-mentioned numerical range, the storage elastic modulus at the temperature at which the adhesive layer 2 is foamed does not become too low, so it can show good peeling when picked up Sex. In addition, by setting the content of the thermoplastic resin of the sticky film 3 within the above-mentioned numerical range, the influence of the movement of low-molecular-weight components other than the thermoplastic resin into the adhesive layer is reduced, and good peelability can be exhibited at the time of pickup. . The blending ratio of the thermosetting resin is not particularly limited as long as the degree to which the viscous film 3 functions as a thermosetting type when heated under specific conditions, is preferably 5 to 60 weight based on the entire viscous film 3 Within the range of%, more preferably within the range of 10 to 50% by weight. In the case where the viscous crystal film 3 is cross-linked to some extent in advance, a polyfunctional compound which reacts with a functional group at the molecular chain end of the polymer or the like may be added in advance as a cross-linking agent during production. Thereby, the adhesion characteristics at high temperature can be improved, and the heat resistance can be improved. As the crosslinking agent, a conventionally known crosslinking agent can be used. In particular, polyisocyanate compounds such as toluene diisocyanate, diphenylmethane diisocyanate, terephthalic acid diisocyanate, 1,5-naphthalene diisocyanate, and an adduct of a polyol and a diisocyanate are more preferred. The addition amount of the crosslinking agent is usually preferably 0.05 to 7 parts by weight based on 100 parts by weight of the polymer. By setting the amount of the cross-linking agent to 7 parts by weight or less, it is possible to suppress a decrease in adhesion. On the other hand, cohesive force can be improved by making it 0.05 weight part or more. Moreover, together with such a polyisocyanate compound, other polyfunctional compounds, such as an epoxy resin, may be contained as needed. In addition, a filler may be appropriately blended in the viscous crystal film 3 according to its use. The blending of the filler can impart electrical conductivity, improve thermal conductivity, adjust elastic modulus, adjust thermal expansion coefficient, and the like. Examples of the filler include inorganic fillers and organic fillers, and inorganic fillers are preferred from the viewpoints of improving handleability, improving thermal conductivity, adjusting melt viscosity, and imparting thixotropic properties. The inorganic filler is not particularly limited, and examples thereof include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and boric acid. Aluminum whiskers, boron nitride, crystalline silicon dioxide, amorphous silicon dioxide, etc. These can be used individually or in combination of 2 or more types. From the viewpoint of improving thermal conductivity, aluminum oxide, aluminum nitride, boron nitride, crystalline silicon dioxide, and amorphous silicon dioxide are preferred. From the viewpoint of a better balance of the above characteristics, crystalline silicon dioxide or amorphous silicon dioxide is preferred. In addition, for the purpose of imparting electrical conductivity and improving thermal conductivity, a conductive substance (conductive filler) can be used as the inorganic filler. Examples of the conductive filler include metal powders made of silver, aluminum, gold, copper, nickel, and conductive alloys in a spherical shape, needle shape, and scale shape, metal oxides such as alumina, amorphous carbon black, and graphite. Wait. The average particle diameter of the filler is preferably 0.005 to 10 μm, and more preferably 0.005 to 1 μm. The reason is that by setting the average particle diameter of the filler to 0.005 μm or more, the wettability and adhesion to the adherend can be made good. In addition, by setting it to 10 μm or less, the effect of the filler added to impart the above-mentioned characteristics can be made sufficient, and heat resistance can be secured. The average particle diameter of the filler is, for example, a value obtained by a photometric particle size distribution meter (manufactured by HORIBA, device name; LA-910). In addition, in the viscous crystal film 3, in addition to the fillers described above, other additives may be appropriately blended as necessary. Examples of the other additives include a flame retardant, a silane coupling agent, and an ion trapping agent. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. These can be used individually or in combination of 2 or more types. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxy Propylmethyldiethoxysilane and the like. These compounds can be used alone or in combination of two or more. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. These can be used individually or in combination of 2 or more types. The thickness of the viscous crystal film 3 (the total thickness in the case of a laminated body) is not particularly limited, and can be selected from a range of 1 to 200 μm, for example, preferably 5 to 100 μm, and more preferably 10 to 80 μm. (Cutting sheet) The dicing sheet 11 of this embodiment has a structure in which an adhesive layer 2 is laminated on a base material 1. The dicing sheet of the present invention is not limited to this example, as long as the viscous film 3 can be fractured during the cold expansion step and singulated. For example, there may be other layers between the substrate and the adhesive layer. (Base material) The base material 1 is preferably UV-transparent and serves as a strength substrate for cutting the die-bond film 10. Examples include: low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra-low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene, polybutene Polyolefins such as polymethylpentene, ethylene-vinyl acetate copolymers, ionomer resins, ethylene- (meth) acrylic copolymers, ethylene- (meth) acrylate (random, alternating) copolymers, Polyesters such as ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, Polyetheretherketone, polyimide, polyetherimide, polyimide, fully aromatic polyimide, polyphenylene sulfide, aramid (paper), glass, glass cloth, fluororesin, polyvinyl chloride, Polyvinylidene chloride, cellulose resin, silicone resin, metal (foil), paper, etc. Examples of the material of the substrate 1 include polymers such as a crosslinked body of the resin. The above-mentioned plastic film can be used without stretching, and a plastic film which is uniaxially or biaxially stretched as required can also be used. By using a resin sheet which is provided with heat shrinkability by a stretching process or the like, the semiconductor wafer 5 with the die attach film 3 can be expanded by thermally shrinking (thermally expanding) the outer peripheral portion of the semiconductor wafer of the substrate 1 after cold expansion. The distance between them makes it easy to recycle the semiconductor wafer 5. For the surface of the substrate 1, in order to improve the adhesion and retention with adjacent layers, conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high-voltage electric shock exposure, ionizing radiation treatment, and other chemical or Physical treatment, coating treatment using a primer (for example, an adhesive substance described later). The substrate 1 may be selected from the same or different types of substrates, and may be a substrate obtained by blending a plurality of types of substrates as required. In addition, in order to impart antistatic ability to the substrate 1, a vapor-deposited layer containing a conductive material having a thickness of about 30 to 500 Å, including a metal, an alloy, an oxide thereof, and the like may be provided on the substrate 1. The substrate 1 may be a single layer or a multilayer of two or more types. The thickness of the substrate 1 is not particularly limited, and can be appropriately determined, and is usually about 5 to 200 μm. (Adhesive layer) The adhesive layer 2 is preferably foamed by heating at 70 ° C to 140 ° C, more preferably foamed by heating at 70 ° C to 120 ° C, and more preferably 70 ° C to It is foamed by heating at 100 ° C. If the adhesive layer 2 is a layer that is foamed by heating at 70 ° C to 140 ° C, when the adhesive force is reduced by foaming caused by heating, the reaction of the adhesive film 3 can be suppressed, and the The change in the physical properties of the viscous crystal film 3 due to heating is minimized. The method for measuring the temperature of foaming by heating is based on the method described in the examples. As described above, the adhesive layer 2 includes the following acrylic polymer A and a foaming agent. Acrylic polymer A: contains CH in a range of 50% by weight or less 2 = CHCOOR 1 (Where, R 1 An acrylic polymer obtained from a monomer composition of an acrylic ester represented by an alkyl group having 6 to 10 carbon atoms. As the above CH 2 = CHCOOR 1 Specific examples of the acrylates include hexyl acrylate, heptyl acrylate, octyl acrylate, isooctyl acrylate, 2-ethylhexyl acrylate, nonyl acrylate, isononyl acrylate, and decyl acrylate Esters, isodecyl acrylate, and the like. Among them, an alkyl acrylate having 8 to 9 carbon atoms is particularly preferred, and 2-ethylhexyl acrylate and isooctyl acrylate are most preferred. Above CH 2 = CHCOOR 1 The acrylates shown can be used alone or in combination of two or more. Above CH 2 = CHCOOR 1 The acrylate shown may be an alkyl acrylate in any form among a linear alkyl acrylate and a branched alkyl acrylate. Above CH 2 = CHCOOR 1 The content of the acrylate shown is 50% by weight or less based on the total amount of the monomer components used to obtain the acrylic polymer A, preferably in the range of 10% to 40% by weight, and more preferably 15% by weight to Within 30% by weight. Above CH 2 = CHCOOR 1 The content of the acrylate shown is within the above-mentioned numerical range, so there is less paste residue on the viscous film 3, and it shows good peelability. Used to obtain acrylic polymer A in addition to the above CH 2 = CHCOOR 1 Examples of monomer components other than the acrylates shown include: CH 2 = CHCOOR 2 (Where, R 2 It is an acrylate represented by an alkyl group having 1 to 5 carbon atoms. Specific examples include methyl acrylate, ethyl acrylate, propyl acrylate, isopropyl acrylate, butyl acrylate, isobutyl acrylate, second butyl acrylate, third butyl acrylate, amyl acrylate, and acrylic acid. Isoamyl ester. As above CH 2 = CHCOOR 1 For monomer components other than the acrylate shown, use CH 2 = CHCOOR 2 In the case of the acrylate shown, it is easy to adjust the chemical and physical properties. Above CH 2 = CHCOOR 2 The content of the acrylate shown is preferably in the range of 20% to 90% by weight, and more preferably in the range of 30% to 80% by weight, relative to the total amount of monomer components used to obtain the acrylic polymer A. Inside. In addition, in order to obtain the acrylic polymer A in addition to the above-mentioned CH 2 = CHCOOR 1 Examples of the monomer component other than the acrylate shown include a hydroxyl-containing monomer. Specific examples of the hydroxyl-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, and (methyl) 6-hydroxyhexyl acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4- Hydroxymethylcyclohexyl) methyl ester and the like. The above-mentioned acrylic polymer A may be incorporated with the above-mentioned CH as needed for the purpose of modifying cohesive strength, heat resistance, and the like. 2 = CHCOOR 1 Acrylate shown, or above CH 2 = CHCOOR 2 Corresponding units of the other monomer components copolymerized with the acrylate shown (sometimes referred to as "other monomer components capable of copolymerization"). Among these, it is preferable not to use a carboxyl group-containing monomer. When a carboxyl group-containing monomer is used, the carboxyl group reacts with the epoxy group of the epoxy resin in the adhesive film, so that the adhesiveness between the adhesive layer and the adhesive film becomes high, and the peelability of the two is reduced. Examples of such a carboxyl group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. . Examples of other monomer components that can be copolymerized include methyl methacrylate, ethyl methacrylate, propyl methacrylate, isopropyl methacrylate, butyl methacrylate, and isobutyl methacrylate. , Methacrylic acid esters such as second methacrylate, third butyl methacrylate, etc .; anhydride monomers such as maleic anhydride, itaconic anhydride; styrene sulfonic acid, allyl sulfonic acid, 2- (methyl ) Sulfonyl-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloxynaphthalenesulfonic acid and other sulfonic acid group-containing monomers Body; phosphate-containing monomers such as 2-hydroxyethylpropenyl phosphonate; styrene-based monomers such as styrene, vinyl toluene, and α-methylstyrene; ethylene, butadiene, isoprene, Olefins such as isobutylene or diene; monomers containing halogen atoms such as vinyl chloride; monomers containing fluorine atoms such as fluorine (meth) acrylate; acrylamide, acrylonitrile, etc. The copolymerizable other monomer components may be used singly or in combination of two or more kinds. The use amount of these copolymerizable monomers is preferably 40% by weight or less, and more preferably 30% by weight or less of the total monomer components. The acrylic polymer A is obtained by polymerizing a single monomer or a mixture of two or more monomers. The polymerization may be performed by any method such as solution polymerization, emulsion polymerization, block polymerization, and suspension polymerization. In terms of preventing contamination of the clean adherend, it is preferable that the content of the low-molecular-weight substance is small. In this respect, the weight average molecular weight of the acrylic polymer A is preferably 350,000 to 1 million, and more preferably about 450,000 to 800,000. In addition, an external cross-linking agent may be suitably used in the adhesive layer in order to adjust the adhesive force. Specific examples of the external crosslinking method include a method of adding and reacting a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, and a melamine-based crosslinking agent. When an external cross-linking agent is used, the amount used is appropriately determined according to the balance with the base polymer to be cross-linked, and further according to the use application as an adhesive. Usually, it is preferable to mix 5 weight part or less with respect to 100 weight part of said base polymers, and it is more preferable to mix | blend 0.1-5 weight part. Furthermore, in addition to the above-mentioned components in the adhesive, additives such as various conventionally known thickeners and anti-aging agents may be used as necessary. As described above, the adhesive layer 2 contains a foaming agent. When the adhesive film 3 is peeled from the dicing sheet 11, the adhesive layer 2 is heated at least in part to foam and / or expand the foaming agent. As a result, the adhesive layer 2 is at least partially expanded, the adhesive surface is deformed into a concave-convex shape, and the area of the adhesive layer 2 and the adhesive crystal film 3 is reduced. As a result, the adhesive force between the two is reduced, and the die-bond film 3 can be peeled from the dicing sheet 11. (Foaming agent) The foaming agent is not particularly limited, and may be appropriately selected from known foaming agents. The foaming agent can be used alone or in combination of two or more. As the foaming agent, heat-expandable microspheres can be suitably used. (Thermally expandable microspheres) The heat-expandable microspheres are not particularly limited, and can be appropriately selected from known heat-expandable microspheres (various inorganic heat-expandable microspheres, organic heat-expandable microspheres, and the like). As the thermally expandable microsphere, a microencapsulated foaming agent can be suitably used from the viewpoint of easy mixing operation and the like. Examples of such thermally expandable microspheres include microspheres obtained by containing a substance that is easily vaporized and expanded by heating, such as isobutane, propane, and pentane, in a shell having elasticity. The above-mentioned shell is often formed of a hot-melt substance or a substance that is destroyed by thermal expansion. Examples of the substance forming the shell include vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, and poly (vinylidene chloride). Wait The thermally expandable microspheres can be produced by a conventional method such as a coacervation method or an interfacial polymerization method. Furthermore, for the thermally expandable microspheres, for example, a series of "Matsumoto Microsphere" manufactured by Matsumoto Oil & Fat Pharmaceutical Co., Ltd. (for example, "Matsumoto Microsphere F30", "Matsumoto Microsphere F301D", and "Matsumoto Microsphere F301D") "Matsumoto Microsphere F50D", trade name "Matsumoto Microsphere F501D", trade name "Matsumoto Microsphere F80SD", trade name "Matsumoto Microsphere F80VSD", etc.), and trade name "051DU", trade name "053DU" manufactured by Expancell, Commercial items such as the name "551DU", the product name "551-20DU", and the product name "551-80DU". When a thermally expandable microsphere is used as the foaming agent, the particle diameter (average particle diameter) of the thermally expandable microsphere can be appropriately selected depending on the thickness of the adhesive layer 2 and the like. The average particle diameter of the thermally expandable microspheres can be selected, for example, from a range of 100 μm or less (preferably 80 μm or less, more preferably 1 μm to 50 μm, and particularly 1 μm to 30 μm). Furthermore, the particle size adjustment of the thermally expandable microspheres can be performed during the production of the thermally expandable microspheres, or it can be performed by classification or other methods after the generation. As the thermally expandable microspheres, a uniform particle diameter is preferred. (Other foaming agents) In this embodiment, as the foaming agent, a foaming agent other than the thermally expandable microspheres may be used. As such a foaming agent, various foaming agents such as various inorganic foaming agents or organic foaming agents can be appropriately selected and used. Typical examples of the inorganic foaming agent include ammonium carbonate, ammonium bicarbonate, sodium bicarbonate, ammonium nitrite, sodium borohydride, and various azides. In addition, as representative examples of the organic foaming agent, for example, water; chlorochloroalkane-based compounds such as trichloromonofluoromethane and dichloromonofluoromethane; azobisisobutyronitrile, and azomethamine. And azo compounds such as barium azodicarboxylate; p-toluenesulfonylhydrazine, diphenylhydrazone-3,3'-disulfonylhydrazine, 4,4'-oxobis (benzenesulfonylhydrazine), allyl Hydrazine compounds such as bis (sulfohydrazine); aminourea compounds such as p-toluenesulfonamide urea, 4,4'-oxybis (benzenesulfonamide); 5-morpholine-1,2, Triazole compounds such as 3,4-thiatriazole; N, N'-dinitrosopentamethylenetetramine, N, N'-dimethyl-N, N'-dinitroso-p-phenylenediene N-nitroso compounds such as formamidine. In this embodiment, in order to reduce the adhesive force of the adhesive layer 2 efficiently and stably by heat treatment, it is preferable to have a volume expansion rate of 5 times or more, especially 7 times or more, and especially 10 times or more. A foaming agent of moderate strength that will not crack. The compounding amount of the foaming agent (heat-expandable microspheres, etc.) can be appropriately set according to the expansion ratio of the adhesive layer, or the decrease in adhesive force, etc., and is usually 1 weight based on 100 parts by weight of the base polymer forming the adhesive layer. Parts to 150 parts by weight (preferably 10 to 130 parts by weight, and more preferably 25 to 100 parts by weight). Moreover, as a method of foaming a foaming agent (namely, the method of thermally expanding a thermally expandable adhesive layer), it can select suitably from a well-known heating foaming method, and can employ it. The thickness of the adhesive layer 2 is not particularly limited, and it is preferably about 1 to 50 μm, and more preferably 2 to, in terms of preventing defects on the cut surface of the wafer, or both of the fixation and holding of the adhesive film 3. 30 μm, more preferably 5 to 25 μm. The die-bonding film 3 of the dicing die-bonding film 10 is preferably protected by an isolation film (not shown). The separator has a function as a protective material for protecting the die-bond film 3 until it is put into practical use. In addition, the release film can also be used as a support substrate when the adhesive film 3 is transferred to the adhesive layer 2. The isolation film is peeled off when the workpiece is adhered to the die-bonding film 3 of the cutting die-bonding film. As the release film, polyethylene terephthalate (PET), polyethylene, polypropylene, or a surface-coated plastic using a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate-based release agent can also be used. Film, or paper. The dicing die-bonding film 10 of this embodiment is produced as follows, for example. First, the substrate 1 can be formed into a film by a conventionally known film forming method. Examples of the film forming method include a roll film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T film extrusion method, a coextrusion method, and a dry lamination method. Next, after the adhesive composition solution is coated on the substrate 1 to form a coating film, the coating film is dried under specific conditions (heat-crosslinked as necessary) to form a precursor layer. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. The drying conditions are performed, for example, in a range of a drying temperature of 80 to 150 ° C. and a drying time of 0.5 to 5 minutes. In addition, after the adhesive composition is applied to the release film to form a coating film, the coating film is dried under the drying conditions to form the precursor layer. Then, the above-mentioned precursor layer and the separator are adhered together on the substrate 1. In this way, a precursor of a cutting blade is produced. The adhesive film 3 is produced, for example, as described below. First, an adhesive composition solution is prepared as a material for forming the sticky film 3. As described above, the above-mentioned adhesive agent composition, filler, various other additives, and the like are prepared in the adhesive agent solution. Then, after the adhesive composition solution is applied to the base material separator film to have a specific thickness to form a coating film, the coating film is dried under specific conditions to form a sticky crystal film 3. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. The drying conditions are performed, for example, in a range of a drying temperature of 70 to 160 ° C and a drying time of 1 to 5 minutes. Alternatively, after the adhesive composition solution is applied on the release film to form a coating film, the coating film is dried under the above-mentioned drying conditions to form the viscous crystal film 3. Then, the adhesive film 3 and the isolation film are adhered to the substrate isolation film together. Then, the isolation film is peeled from the above-mentioned dicing sheet precursor and the adhesive film 3 respectively, and the adhesive film 3 and the adhesive layer are bonded to each other in such a manner as to be an adhesive surface. Adhesion can be performed, for example, by crimping. In this case, the lamination temperature is not particularly limited, but is preferably 30 to 50 ° C, more preferably 35 to 45 ° C. The line pressure is not particularly limited, but is preferably 0.1 to 20 kgf / cm, and more preferably 1 to 10 kgf / cm. Then, ultraviolet rays can be irradiated from the substrate 1 side. As the irradiation amount of ultraviolet rays, it is preferable to make the said peeling force A and the said peeling force B into the said numerical value range. The specific amount of ultraviolet radiation varies depending on the composition or thickness of the adhesive layer, for example, it is preferably 50 mJ to 500 mJ, and more preferably 100 mJ to 300 mJ. The dicing die-bonding film of this embodiment is obtained in the above manner. (Method of Manufacturing Semiconductor Device) Next, a method of manufacturing a semiconductor device using a dicing die-bond film 10 will be described with reference to FIGS. 2 to 7. 2 to 5 are schematic cross-sectional views for explaining a method of manufacturing a semiconductor device according to this embodiment. First, laser light is irradiated on the planned division line 4L of the semiconductor wafer 4 to form a modified region on the planned division line 4L. This method is a method of aligning light-concentrating points inside a semiconductor wafer, irradiating laser light along a predetermined grid-shaped division line, and forming a modified region inside the semiconductor wafer by ablation based on multiphoton absorption. The laser light irradiation conditions may be appropriately adjusted within a range of the following conditions. ＜ Laser light irradiation conditions ＞ (A) Laser light Laser light source Semiconductor laser light excitation Nd: YAG Laser light wavelength 1064 nm Laser spot cross-sectional area 3.14 × 10 -8 cm 2 Oscillation mode Q switching pulse repetition frequency below 100 kHz Pulse width below 1 μs Output below 1 mJ Laser quality TEM00 Polarization characteristics Linear polarization (B) Condensing lens magnification 100 times or less NA 0.55 Transmission rate of laser light wavelength 100% or less (C) The moving speed of the mounting table on which the semiconductor substrate is placed is 280 mm / sec or less. Further, a method for forming a modified region on a predetermined division line 4L by irradiating laser light is disclosed in Japanese Patent No. 3408805, Japanese Patent Since it is described in detail in Japanese Patent Publication No. 2003-338567, the detailed description is omitted here. Next, as shown in FIG. 3, the semiconductor wafer 4 after the formation of the modified region is crimped to the die-bond film 3, and then held and fixed (mounting step). This step is carried out by pressing while pressing the pressing mechanism such as a crimping roller. There is no particular limitation on the sticking temperature during installation, but it is preferably in the range of 40 to 80 ° C. The reason for this is that warpage of the semiconductor wafer 4 can be effectively prevented, and the influence of expansion and contraction of the dicing die-bond film can be reduced. Then, by applying tensile tension to the dicing die-bonding film 10, the semiconductor wafer 4 and the die-bonding film 3 are fractured on a predetermined division line 4L to form a semiconductor wafer 5 (cold expansion step). In this step, for example, a commercially available wafer expansion device can be used. Specifically, as shown in FIG. 4 (a), the dicing ring 31 is adhered to the peripheral portion of the adhesive layer 2 of the dicing die film 10 to which the semiconductor wafer 4 is adhered, and then fixed to the wafer expansion device 32. Then, as shown in FIG. 4 (b), the raised portion 33 is raised to apply tension to the dicing die-bond film 11. The cold expansion step is preferably performed under the condition of 0 to -15 ° C, and more preferably performed under the condition of -5 to -15 ° C. Since the cold expansion step is performed under the condition of 0 to -15 ° C, the viscous crystal film 3 can be appropriately fractured. In the cold expansion step, the expansion speed (the speed at which the jacking portion rises) is preferably 100 to 400 mm / second, more preferably 100 to 350 mm / second, and even more preferably 100 to 300 mm / second. When the expansion speed is set to 100 mm / sec or more, the semiconductor wafer 4 and the die-bond film 3 can be easily fractured at substantially the same time. In addition, when the expansion speed is set to 400 mm / sec or less, the dicing sheet 11 can be prevented from being broken. In the cold expansion step, the expansion amount is preferably 4 to 16 mm. The expansion amount can be appropriately adjusted according to the size of the formed wafer within the above-mentioned numerical range. When the expansion amount is 4 mm or more, the semiconductor wafer 4 and the die-bond film 3 can be more easily broken. In addition, when the expansion amount is 16 mm or less, the cutting blade 11 can be further prevented from being broken. In this way, by applying a tensile tension to the dicing die-bond film 10, starting from the modified region of the semiconductor wafer 4, a fracture is generated in the thickness direction of the semiconductor wafer 4, and the die-bond that is in close contact with the semiconductor wafer 4 can be made. The film 3 is fractured, and a semiconductor wafer 5 with a sticky crystal film 3 can be obtained. Then, if necessary, a thermal expansion step is performed. In the thermal expansion step, the dicing sheet 11 is heated further outside the portion to which the semiconductor wafer 4 is adhered to thermally shrink it. As a result, the distance between the semiconductor wafers 5 is increased. The conditions in the thermal expansion step are not particularly limited, but are preferably set to an expansion amount of 4 to 16 mm, a heating temperature of 200 to 260 ° C, a heating distance of 2 to 30 mm, and a rotation speed of 3 ° / sec to 10 ° / sec. Within range. Then, a cleaning step is performed as necessary. In the cleaning step, the dicing sheet 11 of the semiconductor wafer 5 with the adhesive film 3 in a fixed state is mounted on a spin coater. Then, the spinner was rotated while a cleaning solution was dropped on the semiconductor wafer 5. Thereby, the surface of the semiconductor wafer 5 is cleaned. Examples of the cleaning liquid include water. The rotation speed or rotation time of the spin coater varies depending on the type of cleaning liquid, and can be set to, for example, a rotation speed of 400 to 3000 rpm and a rotation time of 1 to 5 minutes. Then, in order to peel off the semiconductor wafer 5 which is subsequently fixed to the dicing die film 10, the semiconductor wafer 5 is picked up (pickup step). There is no particular limitation on the method of picking up, and various conventionally known methods can be adopted. For example, a method of lifting up each semiconductor wafer 5 from a side of the dicing die-bond film 10 with a needle, and picking up the semiconductor wafer 5 to be lifted up by a pick-up device can be cited. Picking up is performed after a specific heat treatment is performed on the adhesive layer 2 to cause thermal expansion. Accordingly, the adhesive force (adhesive force) of the adhesive layer 2 to the die-bond film 3 is reduced, and the peeling of the semiconductor wafer 5 becomes easy. As a result, the semiconductor wafer 5 can be picked up without damage. The heating device that can be used in the heat treatment is not particularly limited, and examples thereof include heating devices (hot plates, hot-air dryers, near-infrared lamps, and air dryers). Examples of the heating temperature include heating at 70 to 140 ° C. Then, as shown in FIG. 5, the picked-up semiconductor wafer 5 is bonded to the adherend 6 via the adhesive film 3 (temporary fixing step). Examples of the adherend 6 include a lead frame, a TAB film, a substrate, and a separately manufactured semiconductor wafer. The adherend 6 may be, for example, a deformable adherend that is easily deformed, or a non-deformable adherend (such as a semiconductor wafer) that is not easily deformed. As the substrate, a conventionally known substrate can be used. In addition, as the lead frame, a metal lead frame such as a Cu lead frame, a 42Alloy lead frame, or an organic substrate including glass epoxy, BT (bismaleimide-triazine), polyimide, or the like can be used. However, the present invention is not limited to this, and also includes a circuit board that can be used for further fixing and electrically connecting a semiconductor element to the semiconductor element. The shear adhesive force at 25 ° C. during the temporary fixing of the viscous crystal film 3 is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa, relative to the adherend 6. If the adhesive bonding force of the die-bonding film 3 is at least 0.2 MPa or more, in the wire bonding step, the die-bonding film 3 and the semiconductor wafer 5 or the adherend are rarely caused by the ultrasonic vibration or heating in this step. 6 is deformed. That is, the semiconductor element is rarely moved due to ultrasonic vibration during wire bonding, thereby preventing a reduction in the success rate of wire bonding. In addition, the shear adhesive force at 175 ° C. at the time of temporary fixing of the viscous crystal film 3 is preferably 0.01 MPa or more, more preferably 0.01 to 5 MPa, with respect to the adherend 6. Next, wire bonding (wire bonding step) for electrically connecting the front end of the terminal portion (internal lead) of the adherend 6 with an electrode pad (not shown) on the semiconductor wafer 5 with the bonding wire 7 is performed (wire bonding step). As the bonding wire 7, for example, a gold wire, an aluminum wire, or a copper wire is used. The temperature at the time of wire bonding is performed in the range of 80 to 250 ° C, preferably 80 to 220 ° C. The heating time is performed for several seconds to several minutes. Wiring is performed by heating to a temperature within the above-mentioned temperature range, and by using a combination of vibration energy based on ultrasonic waves and compression energy based on applied pressure. This step is performed without thermal curing of the viscous crystal film 3. In addition, during this step, the semiconductor wafer 5 and the adherend 6 will not be fixed by the adhesive film 3. Then, the semiconductor wafer 5 is packaged with the packaging resin 8 (packaging step). This step is performed to protect the semiconductor wafer 5 or the bonding wire 7 mounted on the adherend 6. This step is performed by molding the resin for encapsulation with a mold. As the sealing resin 8, for example, an epoxy resin is used. The heating temperature during resin encapsulation is usually performed at 175 ° C for 60 to 90 seconds, but the present invention is not limited to this. For example, it can be cured at 165 to 185 ° C for several minutes. Thereby, the encapsulating resin is hardened, and the semiconductor wafer 5 and the adherend 6 are fixed via the die-bond film 3. That is, in the present invention, even when the post-hardening step described later is not performed, the fixation by the adhesive film 3 can be achieved in this step, which can help reduce the number of manufacturing steps and shorten the manufacturing time of the semiconductor device. In the above-mentioned post-curing step, the encapsulating resin 8 which is insufficiently cured in the aforementioned encapsulating step is completely cured. Even in the case where the die-bond film 3 is not completely thermally cured during the packaging step, in this step, the complete heat-hardening of the die-bond film 3 and the encapsulating resin 8 can also be achieved. The heating temperature in this step varies depending on the type of the encapsulating resin, for example, it is in the range of 165 to 185 ° C, and the heating time is about 0.5 to 8 hours. In the above embodiment, the case where the semiconductor wafer 5 with the die attach film 3 is temporarily fixed to the adherend 6 and then the wire bonding step is performed without completely curing the die attach film 3 is described. However, in the present invention, it is also possible to perform the usual wafer bonding step: after temporarily fixing the semiconductor wafer 5 with the die attach film 3 to the adherend 6, the die bond film 3 is thermally hardened, and then wire bonding is performed. step. Furthermore, the dicing die-bonding film of the present invention can also be suitably used in a case where a plurality of semiconductor wafers are laminated for three-dimensional mounting. At this time, a die-bonding film and a spacer may be laminated between the semiconductor wafers, or only a die-bonding film may be laminated between the semiconductor wafers without a spacer, and may be appropriately changed according to manufacturing conditions, applications, and the like. Next, a method of manufacturing a semiconductor device using a step of forming a groove on the surface of a semiconductor wafer and performing back surface grinding will be described below. 6 and 7 are schematic cross-sectional views for explaining another method of manufacturing the semiconductor device according to this embodiment. First, as shown in FIG. 6 (a), a groove 4S that does not reach the back surface 4R is formed on the surface 4F of the semiconductor wafer 4 with a rotary blade 41. When the grooves 4S are formed, the semiconductor wafer 4 is supported by a supporting substrate (not shown). The depth of the groove 4S can be appropriately set according to the thickness of the semiconductor wafer 4 or the expansion conditions. Then, as shown in FIG. 6 (b), the semiconductor wafer 4 is supported by the protective substrate 42 so that the surface 4F abuts. Then, the back surface is ground with the grinding stone 45 to expose the groove 4S from the back surface 4R. In addition, the pasting of the protective substrate 42 to the semiconductor wafer can be performed using a conventionally known pasting device, and the back surface grinding can also be performed using a previously known grinding device. Next, as shown in FIG. 7, the semiconductor wafer 4 with the groove 4S exposed is crimped onto the dicing die-bonding film 10 and then held and fixed (temporary fixing step). Then, the protective substrate 42 is peeled off, and tension is applied to the dicing die-bond film 10 by the wafer expansion device 32. Thereby, the die-bond film 3 is broken, and a semiconductor wafer 5 is formed (wafer formation step). The temperature, expansion speed, and expansion amount in the wafer formation step are the same as those in the case where a modified region is formed on the planned division line 4L by irradiating laser light. The subsequent steps are the same as the case of the modified region formed on the planned division line 4L by irradiating the laser light, so the description here is omitted. The method for manufacturing a semiconductor device of the present invention is not limited to the above embodiment as long as the semiconductor wafer and the die-bond film are simultaneously fractured in the cold expansion step, or only the die-bond film is fractured in the cold expansion step. As another embodiment, for example, as shown in FIG. 6 (a), a groove 4S that does not reach the back surface 4R may be formed on the surface 4F of the semiconductor wafer 4 by using a rotary blade 41, and then exposed by pressure bonding on the dicing die-bond film The semiconductor wafer 4 in the groove 4S is then held and fixed (temporary fixing step). Then, a wafer expansion device is used to apply tension to the dicing die-bond film. Thereby, in the part of the groove 4S, the semiconductor wafer 4 and the die-bond film 3 can be broken to form a semiconductor wafer 5. In the above embodiment, the case where the adhesive layer of the present invention is the adhesive film 3 is described. However, the adhesive layer of the present invention is not particularly limited as long as it can be formed and used on a dicing sheet. Film for wafer type semiconductor back surface, underfill sheet. The film for the back surface of a flip-chip semiconductor refers to a film stuck on the back surface of the semiconductor wafer to which the flip-chip is connected (the surface opposite to the flip-chip connection surface). In the case where the adhesive layer of the present invention is a film for a flip-chip semiconductor back surface, the composition and content can be changed to the extent that it has a function as a film for a flip-chip semiconductor back surface. 3 The same composition. An underfill sheet refers to a sheet used to fill a gap between a substrate and a semiconductor wafer connected to a flip chip on the substrate. In the case where the adhesive layer of the present invention is an underfill sheet, the same configuration as that of the die-bonding film 3 can be adopted after changing the composition or content to the extent that it functions as an underfill sheet. EXAMPLES Hereinafter, the present invention will be described in detail using examples. However, the present invention is not limited to the following examples as long as the gist thereof is not exceeded. In each example, parts are based on weight unless otherwise specified. (Example 1) <Production of dicing sheet> A heat-expandable microsphere A (Matsumoto Microsphere F-50D: manufactured by Matsumoto Oil & Fat Pharmaceutical Co., Ltd .: average particle size 13.4 μm) was prepared. On the other hand, prepared from 2-ethylhexyl acrylate-ethyl acrylate-methyl methacrylate (in terms of monomer ratio, 2-ethylhexyl acrylate: 30 parts by weight, ethyl acrylate: 70 parts by weight) 3. Methyl methacrylate: 5 parts by weight) 100 parts by weight of a copolymer-based adhesive (2 parts by weight of a polyurethane-based crosslinking agent), and a toluene solution of 30 parts by weight of the thermally expandable microsphere A, The surface of the PET film having a thickness of 45 μm after drying was applied to a surface of a PET film having a thickness of 50 μm and subjected to peeling treatment, and dried to obtain an adhesive layer A. The obtained adhesive layer was adhered to a polyolefin film of 80 μm to obtain a dicing sheet A. ＜ Creation of a viscous film ＞ With respect to 100 parts of an acrylic resin (trade name "SG-P3" manufactured by Nagase ChemteX Corporation, weight average molecular weight 850000), a phenol resin (trade name "MEH-7851ss", Meiwa Kasei Corporation) (Manufactured) 12 parts, filler (trade name "SE-2050MC", manufactured by Admatechs Co. Ltd., average particle size 0.5 μm) 100 parts were dissolved in methyl ethyl ketone to prepare an adhesive with a solid content concentration of 18% by weight Composition solution A. The adhesive composition solution A was applied to a release film (release liner) containing a polyethylene terephthalate film having a thickness of 50 μm and subjected to a silicone release treatment, and then performed at 130 ° C. Dry for 2 minutes. Thereby, a sticky film A having a thickness (average thickness) of 10 μm was obtained. ＜ Production of cutting adhesive film ＞ The PET film was peeled from the cutting sheet A, and the adhesive film A was stuck on the exposed adhesive layer. A hand pressure roller is used for sticking. In this way, a dicing die-bond film A is obtained. (Example 2) <Production of dicing sheet> A heat-expandable microsphere B (Matsumoto Microsphere FN-100SS: manufactured by Matsumoto Oil & Fat Pharmaceutical Co., Ltd .: average particle diameter 8.5 μm) was prepared. On the other hand, prepared from 2-ethylhexyl acrylate-ethyl acrylate-methyl methacrylate (in terms of monomer ratio, 2-ethylhexyl acrylate: 30 parts by weight, ethyl acrylate: 70 parts by weight) 2. Methyl methacrylate: 5 parts by weight) 100 parts by weight of a copolymer-based adhesive (2 parts by weight of a polyurethane-based cross-linking agent) is prepared with a toluene solution of 30 parts by weight of the thermally expandable microsphere B, The surface of the PET film having a thickness of 45 μm after drying was applied on one side of a PET film having a thickness of 50 μm and subjected to a peeling treatment and dried to obtain an adhesive layer B. The obtained adhesive layer was adhered to a polyolefin film of 80 μm to obtain a dicing sheet B. <Preparation of a dicing die-bonding film> The same die-bonding film as that of the die-bonding film A used in Example 1 was prepared. Then, the PET film was peeled from the dicing sheet B, and the adhesive film A was stuck on the exposed adhesive layer. A hand pressure roller is used for sticking. In this way, a dicing die-bond film B is obtained. (Example 3) <Production of a sticky crystal film> A phenol resin (trade name "MEH-7851-4H") was made from 100 parts of an acrylic resin (trade name "SG-P3" manufactured by Nagase ChemteX Corporation, weight average molecular weight 850000). ", Manufactured by Meiwa Chemical Co., Ltd.) 12 parts, filler (trade name" SE-2050MC ", manufactured by Admatechs Co. Ltd., average particle size 0.5 μm): 170 parts were dissolved in methyl ethyl ketone to prepare a solid component Adhesive composition solution B having a concentration of 18% by weight. The adhesive composition solution B was applied to a release film (release liner) containing a polyethylene terephthalate film having a thickness of 50 μm and subjected to a silicone release treatment, and then performed at 130 ° C. Dry for 2 minutes. Thereby, a sticky film B having a thickness (average thickness) of 10 μm was obtained. ＜ Creation of cutting adhesive film ＞ Peel the PET film from the cutting sheet A, and stick the adhesive film B on the exposed adhesive layer. A hand pressure roller is used for sticking. With this, a dicing die-bond film C is obtained. (Comparative example 1) <Preparation of dicing sheet> Prepared from 2-ethylhexyl acrylate-ethyl acrylate-methyl methacrylate (based on monomer ratio, 2-ethylhexyl acrylate: 60 parts by weight, Ethyl acrylate: 40 parts by weight, methyl methacrylate: 5 parts by weight) 100 parts by weight of a copolymer-based adhesive (2 parts by weight of a polyurethane-based crosslinking agent), and the above-mentioned thermally expandable microspheres A 30 parts by weight of a toluene solution was applied to a surface of a PET film having a thickness of 50 μm and subjected to peeling treatment so as to have a thickness of 45 μm after drying, and dried to obtain an adhesive layer C. The obtained adhesive layer was adhered to a polyolefin film of 80 μm to obtain a dicing sheet C. <Preparation of a dicing die-bonding film> The same die-bonding film as that of the die-bonding film A used in Example 1 was prepared. Then, the PET film was peeled from the dicing sheet C, and the adhesive crystal film A was stuck on the exposed adhesive layer. A hand pressure roller is used for sticking. In this way, a dicing die-bond film D is obtained. (Comparative Example 2) <Preparation of Adhesive Crystal Film> 100 parts of an acrylic resin (trade name "SG-70L" manufactured by Nagase ChemteX Corporation, weight average molecular weight 900,000) was used to make epoxy resin A (trade name "KI-3000 "Toto Chemical Co., Ltd." 200 parts, epoxy resin B (trade name "JER YL-980" manufactured by Mitsubishi Chemical Co., Ltd.) 180 parts, phenol resin (trade name "MEH-7800H" manufactured by Meiwa Chemical Co., Ltd. ) 360 parts, filler (trade name "SE-2050MC" manufactured by Admatechs Co. Ltd., average particle size 0.5 μm), 830 parts were dissolved in methyl ethyl ketone to prepare an adhesive composition having a solid content concentration of 18% by weight Solution C. The adhesive composition solution C was applied to a release film (release liner) containing a polyethylene terephthalate film having a thickness of 50 μm and subjected to a silicone release treatment, and then performed at 130 ° C. Dry for 2 minutes. Thereby, a viscous crystal film C having a thickness (average thickness) of 10 μm was obtained. <Production of a dicing die-bonding film> A dicing sheet similar to the dicing sheet A used in Example 1 was prepared. Then, the PET film was peeled from the dicing sheet A, and the crystal film C was stuck on the exposed adhesive layer. A hand pressure roller is used for sticking. In this way, a dicing die-bond film E is obtained. (Comparative example 3) <Creation of a dicing die-bonding film> The same dicing sheet as the dicing sheet C used in the comparative example 1 was prepared. In addition, a dicing sheet similar to the die-bond film C used in Comparative Example 2 was prepared. Then, the PET film was peeled from the dicing sheet C, and the adhesive crystal film C was stuck on the exposed adhesive layer. A hand pressure roller is used for sticking. With this, a dicing die-bond film F is obtained. [Measurement of the temperature A of foaming of the adhesive layer due to heating] The cut adhesive film was cut into 1 cm squares, with the substrate side facing down, and left on a hot plate heated to a specific temperature for 20 seconds. After 20 seconds, it was taken out from the hot plate, and after returning to room temperature, the thickness of the laminated belt was measured. The heating test was performed by successively increasing the temperature by 5 ° C. from the low temperature side, and the initial temperature at which the thickness difference reached 3 μm or more was set to the temperature A at which foaming was caused by heating. The results are shown in Table 1. [Measurement of storage elastic modulus at temperature A before curing of the viscous film, and measurement of storage elastic modulus at 23 ° C. before curing of the viscous film] The viscous film was laminated to a thickness of 200 μm. Then, a rectangular blade with a width of 10 mm and a length of 40 mm was cut with a cutter. Then, the storage elastic modulus was measured with a solid viscoelasticity measuring device (RSA-G2, manufactured by TA Instruments Japan Ltd.). The measurement conditions are as follows. The measurement was started after holding at -40 ° C for 5 minutes. From the obtained data of the storage elastic modulus, the storage elastic modulus at 23 ° C. and the storage elastic modulus at temperature A were read. The results are shown in Table 1. <Measurement conditions> Measurement temperature range: -40 ～ 260 ℃ Distance between chucks 20 mm Tensile mode frequency 1 Hz Strain 0.1% [The temperature between the adhesive film before the adhesive layer foaming and the adhesive layer at 23 ℃ Measurement of peeling force, and measurement of peeling force at -15 ° C between the adhesive film and the adhesive layer before foaming of the adhesive layer] Stick a strong adhesive tape on the adhesive film surface of the cut adhesive film (Nitto BT-315), manufactured by Denko Electric Co., Ltd., cut to a width of 100 mm and a length of 200 mm. For the measurement, a tensile tester (manufacturer name: SHIMADZU) was used. The substrate and the adhesive layer were clamped with an upper chuck jig, the die-bond film and the strong adhesive tape were clamped with a lower chuck jig, and the peeling test was performed at a speed of 100 mm / min and T-peeling. The measurement temperature was performed at 23 ° C and -15 ° C. The results are shown in Table 1. [Measurement of peeling force at 23 ° C. after foaming the adhesive layer] Adhere a strong adhesive tape (manufactured by Nitto Denko Corporation, BT-315) to the adhesive film surface of the cut adhesive film, and cut into a width of 100 mm, 200 mm length. The produced sample was hung in an oven set to a temperature A, left for 25 seconds, and then taken out. For the measurement, a tensile tester (manufacturer name: SHIMADZU) was used. The substrate and the adhesive layer were clamped with an upper chuck jig, the die-bond film and the strong adhesive tape were clamped with a lower chuck jig, and the peeling test was performed at a speed of 100 mm / min and T-peeling. The measurement temperature was performed at 23 ° C. The results are shown in Table 1. [Pickability evaluation] Using ML300-Integration manufactured by Tokyo Precision Co., Ltd. as a laser light processing device, aligning the light collecting points on the inside of a 12-inch semiconductor wafer and dividing it along a grid (10 mm × 10 mm) A predetermined line is irradiated with laser light to form a modified region inside the semiconductor wafer. The laser light irradiation conditions were performed as follows. (A) Laser light Laser light source Semiconductor laser light excitation Nd: YAG laser light wavelength 1064 nm Laser spot cross-section area 3.14 × 10 -8 cm 2 Oscillation method Q switching pulse repetition frequency 100 kHz Pulse width 30 ns Output 20 μJ / pulse laser light quality TEM00 40 Polarization characteristics Linearly polarized light (B) 50 times magnification for condenser lens NA 0.55 Transmission rate for laser light wavelength 60% (C ) The moving speed of the mounting table on which the semiconductor substrate is placed is 100 mm / sec. Then, the back surface polishing tape is adhered to the surface of the semiconductor wafer. The back surface grinding machine DGP8760 made by DISCO Corporation is used to grind the back surface to make the semiconductor The thickness of the wafer becomes 30 μm. Then, the dicing die-bonding films of the examples and comparative examples were subjected to the aforementioned semiconductor wafer and dicing ring bonding based on the pre-laser processing. Next, a Die Separator DDS2300 manufactured by DISCO Corporation was used to cut the semiconductor wafer and heat-shrink the dicing sheet to obtain a sample. Specifically, first, using a cold expansion unit, the semiconductor wafer was cut under conditions of an expansion temperature of -15 ° C, an expansion speed of 200 mm / sec, and an expansion amount of 12 mm. Then, using a thermal expansion unit, the dicing sheet was thermally contracted under the conditions of an expansion amount of 10 mm, a heating temperature of 250 ° C, an air volume of 40 L / min, a heating distance of 20 mm, and a rotation speed of 3 ° / sec. Then, heating is performed. Heating is performed on a heat stage from the substrate side. The heating temperature was set to temperature A, and the heating time was set to 20 seconds. As a result, the adhesive force of the adhesive layer is reduced. Picking evaluation was performed using the sample obtained by the above. Specifically, using Die bonder SPA-300 (manufactured by Shinkawa Ltd.), picking was performed under the following conditions. The case where all the picking can be performed is denoted as ◎, the case where the picking success rate is 90% or more is denoted as 0, and the case where the picking success rate is less than 90% is denoted as × for evaluation. The results are shown in Table 1. <Pickup conditions> Number of pins: 5 Pickup height: 350 μm Pickup evaluation number: 50 wafers [Table 1]

1‧‧‧基材1‧‧‧ substrate

2‧‧‧黏著劑層2‧‧‧ Adhesive layer

2b‧‧‧未被黏晶膜3覆蓋之部份2b‧‧‧The part not covered by the adhesive film 3

3‧‧‧黏晶膜3‧‧‧ sticky crystal film

4‧‧‧半導體晶圓4‧‧‧ semiconductor wafer

4F‧‧‧表面4F‧‧‧ surface

4L‧‧‧分割預定線4L‧‧‧ divided scheduled line

4R‧‧‧背面4R‧‧‧Back

4S‧‧‧槽4S‧‧‧slot

5‧‧‧半導體晶片5‧‧‧ semiconductor wafer

6‧‧‧被接著體6‧‧‧ to be followed

7‧‧‧接合引線7‧‧‧bonding leads

8‧‧‧封裝樹脂8‧‧‧Encapsulating resin

10‧‧‧切割黏晶膜10‧‧‧Cutting Adhesive Film

11‧‧‧切割片11‧‧‧cut piece

31‧‧‧切割環31‧‧‧ cutting ring

32‧‧‧晶圓擴張裝置32‧‧‧Wafer expansion device

33‧‧‧頂起部33‧‧‧ jacking

41‧‧‧旋轉刀片41‧‧‧rotating blade

42‧‧‧保護基材42‧‧‧ Protective substrate

45‧‧‧磨削磨石45‧‧‧ grinding stone

圖1為表示本實施形態之切割黏晶膜之剖面示意圖。 圖2為用以說明本實施形態之半導體裝置之製造方法的剖面示意圖。 圖3為用以說明本實施形態之半導體裝置之製造方法的剖面示意圖。 圖4(a)、(b)為用以說明本實施形態之半導體裝置之製造方法的剖面示意圖。 圖5為用以說明本實施形態之半導體裝置之製造方法的剖面示意圖。 圖6(a)及(b)為用以說明其他實施形態之半導體裝置之製造方法的剖面示意圖。 圖7為用以說明其他實施形態之半導體裝置之其他製造方法的剖面示意圖。FIG. 1 is a schematic cross-sectional view showing a dicing die-bonding film of this embodiment. FIG. 2 is a schematic cross-sectional view for explaining a method for manufacturing a semiconductor device according to this embodiment. FIG. 3 is a schematic cross-sectional view illustrating a method for manufacturing a semiconductor device according to this embodiment. 4 (a) and 4 (b) are schematic cross-sectional views for explaining a method for manufacturing a semiconductor device according to this embodiment. FIG. 5 is a schematic cross-sectional view for explaining a method for manufacturing a semiconductor device according to this embodiment. 6 (a) and 6 (b) are schematic cross-sectional views for explaining a method for manufacturing a semiconductor device according to another embodiment. FIG. 7 is a schematic cross-sectional view for explaining another method of manufacturing a semiconductor device according to another embodiment.

Claims (9)

一種切割片一體型接著膜，其特徵在於： 其具備： 具有基材及黏著劑層之切割片、以及 設置於上述黏著劑層上之接著劑層， 上述黏著劑層包含下述丙烯酸系聚合物A及發泡劑， 上述接著劑層包含熱塑性樹脂，上述熱塑性樹脂之含量相對於上述接著劑層之樹脂成分整體在40重量%～95重量%之範圍內； 丙烯酸系聚合物A：由以50重量%以下之範圍內含有CH2 =CHCOOR1 (式中，R1 係碳數為6～10之烷基)所示之丙烯酸酯之單體組合物獲得的丙烯酸系聚合物。A dicing sheet-integrated adhesive film, comprising: a dicing sheet having a substrate and an adhesive layer, and an adhesive layer provided on the adhesive layer, wherein the adhesive layer includes the following acrylic polymer A and a foaming agent, the adhesive layer includes a thermoplastic resin, and the content of the thermoplastic resin is within a range of 40% to 95% by weight relative to the entire resin component of the adhesive layer; the acrylic polymer A: An acrylic polymer obtained from a monomer composition containing an acrylate represented by CH 2 = CHCOOR 1 (wherein R 1 is an alkyl group having 6 to 10 carbon atoms) in a range of not more than% by weight. 如請求項1之切割片一體型接著膜，其中上述黏著劑層藉由70℃～140℃之加熱而發泡。For example, the dicing sheet-integrated adhesive film of claim 1, wherein the adhesive layer is foamed by heating at 70 ° C to 140 ° C. 如請求項1之切割片一體型接著膜，其中將上述黏著劑層藉由加熱而發泡之溫度設為溫度A時，上述接著劑層之硬化前之溫度A下的儲存彈性模數在0.1 MPa～50 MPa之範圍內。For example, the cutting-piece-integrated adhesive film of claim 1, wherein when the temperature at which the adhesive layer is foamed by heating is set to temperature A, the storage elastic modulus at the temperature A before the adhesive layer is hardened is 0.1 MPa ～ 50 MPa. 如請求項1之切割片一體型接著膜，其中上述接著劑層之硬化前的23℃下之儲存彈性模數在10 MPa～3400 MPa之範圍內。For example, the cutting-piece-integrated adhesive film of claim 1, wherein the storage elastic modulus at 23 ° C before the curing of the adhesive layer is in a range of 10 MPa to 3400 MPa. 如請求項1之切割片一體型接著膜，其中上述黏著劑層發泡前之上述接著劑層與上述黏著劑層之間的23℃下之剝離力在1 N/100 mm～50 N/100 mm之範圍內。For example, the cutting sheet-integrated adhesive film of claim 1, wherein the peeling force between the adhesive layer and the adhesive layer at 23 ° C before the adhesive layer is foamed is 1 N / 100 mm to 50 N / 100. Within mm. 如請求項1之切割片一體型接著膜，其中上述黏著劑層發泡前之上述接著劑層與上述黏著劑層之間的-15℃下之剝離力為1 N/100 mm以上。For example, the dicing sheet-integrated adhesive film of claim 1, wherein the peeling force between the adhesive layer and the adhesive layer before the adhesive layer at -15 ° C is 1 N / 100 mm or more. 如請求項1之切割片一體型接著膜，其中上述發泡劑為熱膨脹性微球。The dicing sheet-integrated adhesive film according to claim 1, wherein the foaming agent is a thermally expandable microsphere. 如請求項1之切割片一體型接著膜，其中上述熱塑性樹脂為丙烯酸系樹脂。The dicing sheet-integrated adhesive film according to claim 1, wherein the thermoplastic resin is an acrylic resin. 如請求項1至8中任一項之切割片一體型接著膜，其中上述接著劑層為黏晶膜。The dicing sheet-integrated adhesive film according to any one of claims 1 to 8, wherein the adhesive layer is a sticky crystal film.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI809132B (en) * 2018-06-29 2023-07-21 日商琳得科股份有限公司 Manufacturing method of semiconductor chip and manufacturing method of semiconductor device
TWI814905B (en) * 2018-10-05 2023-09-11 日商日東電工股份有限公司 Cut crystal adhesive film
TWI837178B (en) * 2018-09-20 2024-04-01 日商三井化學東賽璐股份有限公司 Method for manufacturing electronic device

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7143156B2 (en) * 2018-04-27 2022-09-28 日東電工株式会社 Semiconductor device manufacturing method
WO2019208071A1 (en) * 2018-04-27 2019-10-31 日東電工株式会社 Manufacturing method for semiconductor device
JP7033497B2 (en) * 2018-05-09 2022-03-10 リンテック株式会社 Individual piece forming device and individual piece forming method
JP7033494B2 (en) * 2018-05-09 2022-03-10 リンテック株式会社 Individual piece forming device and individual piece forming method
JP7033495B2 (en) * 2018-05-09 2022-03-10 リンテック株式会社 Individual piece forming device and individual piece forming method
JP7033496B2 (en) * 2018-05-09 2022-03-10 リンテック株式会社 Individual piece forming device and individual piece forming method
JP7033004B2 (en) * 2018-05-24 2022-03-09 日東電工株式会社 Dicing Diebond film and semiconductor device manufacturing method
JP7188668B2 (en) * 2018-07-11 2022-12-13 リンテック株式会社 singulation sheet
JP2020021913A (en) * 2018-08-03 2020-02-06 リンテック株式会社 Pickup method of semiconductor chip
WO2020136902A1 (en) * 2018-12-28 2020-07-02 日立化成株式会社 Die bonding film, adhesive sheet, and semiconductor package and method for manufacturing same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003007649A (en) 2001-06-18 2003-01-10 Disco Abrasive Syst Ltd Method of dividing semiconductor wafer
JP2009164556A (en) * 2007-12-11 2009-07-23 Furukawa Electric Co Ltd:The Tape for processing wafer
JP4810565B2 (en) * 2008-11-26 2011-11-09 日東電工株式会社 Dicing die-bonding film and method for manufacturing semiconductor device
JP5439264B2 (en) * 2010-04-19 2014-03-12 日東電工株式会社 Dicing tape integrated semiconductor backside film
JP4976532B2 (en) * 2010-09-06 2012-07-18 日東電工株式会社 Film for semiconductor devices
JP6068386B2 (en) * 2014-03-31 2017-01-25 日東電工株式会社 Thermosetting die bond film, dicing die bond film, and semiconductor device manufacturing method
JP2015218287A (en) * 2014-05-19 2015-12-07 古河電気工業株式会社 Adhesive film-integrated surface protection tape for use in grinding thin film, and method for manufacturing semiconductor chip

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI809132B (en) * 2018-06-29 2023-07-21 日商琳得科股份有限公司 Manufacturing method of semiconductor chip and manufacturing method of semiconductor device
TWI837178B (en) * 2018-09-20 2024-04-01 日商三井化學東賽璐股份有限公司 Method for manufacturing electronic device
TWI814905B (en) * 2018-10-05 2023-09-11 日商日東電工股份有限公司 Cut crystal adhesive film

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