TWI837178B - Method for manufacturing electronic device - Google Patents

Abstract

The invention provides a method for manufacturing an electronic device, including the following steps in sequence: (A) preparing a structural body (60) having an electronic component (10) and an adhesive laminated film (50), wherein the electronic component (10) having a circuit forming surface (10A) is half cut, and the adhesive laminated film (50) has a substrate layer (20) and an adhesive resin layer (40) and is attached to the circuit forming surface (10A) of the electronic component (10) on the side of the adhesive resin layer (40) in a way that protects the circuit forming surface (10A); (B) back-grinding a surface at an opposite side of the circuit forming surface (10A) of the electronic component (10) as the adhesive laminated film (50) is attached thereto; (C) full-dicing the electronic component (10) as the adhesive laminated film (50) is attached thereto; and (D) forming an electromagnetic wave shielding layer (70) on the separated electronic component (10) as the adhesive laminated film (50) is attached thereto. The same adhesive laminated film is used as the adhesive laminated film (50) in (A), (B), (C), and (D).

Description

Method for manufacturing electronic device

The present invention relates to a method for manufacturing an electronic device.

In the manufacturing process of electronic devices, in order to provide electromagnetic wave shielding properties to electronic components, the following step is sometimes performed, that is, an electromagnetic wave shielding layer is formed on the surface of the electronic component while the circuit forming surface of the electronic component is protected by a protective film or the like. In this way, electromagnetic wave shielding properties can be provided to the electronic component, and electromagnetic wave noise generated by the electronic component can be blocked. In this way, the electronic component can be prevented from causing adverse effects on other surrounding electronic components.

Technologies related to the electromagnetic wave shielding properties of the electronic components can be cited, for example, as described in Patent Document 1 (International Publication No. 2010/029819).

[Prior art literature]

[Patent Literature]

Patent document 1: International Publication No. 2010/029819

According to the research conducted by the inventors of the present invention, the following issues have been discovered regarding the manufacturing method of electronic devices with electromagnetic wave shielding properties.

First, the inventors and others found that in the previous method of manufacturing electronic devices, as shown in FIG. 3, when the electromagnetic wave shielding layer 140 is formed on the surface of the electronic component 100 while the circuit forming surface 100A of the electronic component 100 is protected by the circuit forming surface protection tape 130, the electromagnetic wave shielding layer 140 is sometimes not formed at the lower end 150 of the side surface of the electronic component 100. In this case, the electromagnetic wave shielding property of the electronic component 100 is poor.

The inventors of the present invention have conducted further research based on the above-mentioned viewpoints, and found that as shown in FIG3, when the electronic component 100 attached to the dicing tape 120 is rearranged on the circuit forming surface protection tape 130, the portion (adhesive layer) of the circuit forming surface protection tape 130 that is in contact with the lower end portion 150 of the side of the electronic component 100 sometimes bulges and covers the lower end portion 150 of the side of the electronic component 100. That is, according to the research of the inventors of the present invention, it is clear that the lower end portion 150 of the side of the electronic component 100 is covered by the adhesive 160 constituting the adhesive layer of the circuit forming surface protection tape 130, so that the electromagnetic wave shielding layer 140 is not formed at the lower end portion 150 of the side of the electronic component 100.

In addition, regarding the manufacturing method of an electronic device with electromagnetic wave shielding properties, as shown in Figure 3, the electronic component 100 is attached to the back grinding tape 110 to perform a back grinding step, and then the electronic component 100 is peeled off from the back grinding tape 110 and attached to the cutting tape 120 to perform a cutting step, and then the electronic component 100 is peeled off from the cutting tape 120 and arranged on the circuit forming surface protective tape 130 to perform an electromagnetic wave shielding layer forming step. Therefore, in the previous method for manufacturing electronic devices, three types of tapes are used to temporarily fix the electronic component 100, and the number of steps is very large, including the steps of attaching the electronic component 100 to each tape or peeling the electronic component 100 from each tape.

That is, the inventors and others have found that in the manufacturing method of electronic devices with electromagnetic wave shielding properties, there is room for improvement from the perspective of forming an electromagnetic wave shielding layer on electronic parts well and shortening the manufacturing steps of the electronic device.

The present invention is formed in view of the above situation and provides a method for manufacturing an electronic device, which can form an electromagnetic wave shielding layer on the electronic parts well and shorten the manufacturing steps of the electronic device.

The inventors of the present invention have repeatedly conducted intensive research to achieve the above-mentioned topic. As a result, they found that by using the same adhesive multilayer film as a film for protecting the circuit forming surface of the electronic component in the steps of preparing a structure with half-cut electronic components, the back grinding step, the full cutting step, and the electromagnetic wave shielding layer forming step, a part of the step of attaching the electronic component to each tape or the step of peeling the electronic component from each tape can be omitted, thereby suppressing the poor formation of the electromagnetic wave shielding layer at the lower end of the side of the electronic component, thereby completing the present invention.

According to the present invention, a method for manufacturing an electronic device as shown below is provided.

[1]

A method for manufacturing an electronic device, comprising: step (A), preparing a structure having an electronic component and an adhesive laminate film, wherein the electronic component has a circuit forming surface and is half-cut, the adhesive laminate film has a base layer and an adhesive resin layer, and the adhesive resin layer is attached to the circuit forming surface of the electronic component in a manner to protect the circuit forming surface; step (B), in a state of being attached to the adhesive laminate film, The circuit forming surface of the electronic component is back-grinded on the surface opposite to the circuit forming surface; step (C), fully cutting the electronic component while being attached to the adhesive laminate film; and step (D), forming an electromagnetic wave shielding layer on the singulated electronic component while being attached to the adhesive laminate film. In the steps (A), (B), (C) and (D), the same adhesive laminate film is used as the adhesive laminate film.

[2]

The method for manufacturing an electronic device as described in [1], wherein the step (A) comprises: step (A1), half-cutting the electronic component having a circuit forming surface, and then attaching the adhesive laminate film to the circuit forming surface of the half-cut electronic component; or step (A2), attaching the adhesive laminate film to the circuit forming surface of the electronic component having a circuit forming surface, and then half-cutting the electronic component attached to the adhesive laminate film.

[3]

The method for manufacturing an electronic device as described in [1] or [2], wherein the adhesive laminate film further has a concave-convex absorptive resin layer between the substrate layer and the adhesive resin layer.

[4]

The method for manufacturing an electronic device as described in [3] further includes a step (E) between the step (A) and the step (D), wherein the step (E) is to improve the heat resistance of the concave-convex absorbent resin layer by cross-linking the concave-convex absorbent resin layer.

[5]

A method for manufacturing an electronic device as described in [3] or [4], wherein the concavoconvex absorptive resin layer comprises a cross-linking resin.

[6]

A method for manufacturing an electronic device as described in any one of [3] to [5], wherein the thickness of the concavoconvex absorptive resin layer is greater than 10 μm and less than 1000 μm.

[7]

The method for manufacturing an electronic device as described in any one of [1] to [6], further comprising a step (F) after the step (D), wherein the step (F) is to peel the electronic component from the adhesive laminate film.

[8]

The method for manufacturing an electronic device as described in [7], wherein in the step (F), the electronic component is peeled off from the adhesive laminate film while the area of the adhesive laminate film to which the electronic component is attached is expanded in the in-plane direction of the film to expand the interval between adjacent electronic components.

[9]

A method for manufacturing an electronic device as described in any one of [1] to [8], wherein the circuit forming surface of the electronic component includes a bump electrode.

[10]

The method for manufacturing an electronic device as described in [9], wherein when the height of the bump electrode is set to H [μm] and the thickness of the uneven absorptive resin layer is set to d [μm], H/d is greater than 0.01 and less than 1.

[11]

The method for manufacturing an electronic device as described in any one of [1] to [10], wherein in the step (D), the electromagnetic wave shielding layer is formed on the electronic component using at least one method selected from sputtering, evaporation, spraying, electroplating and non-electroplating.

[12]

A method for manufacturing an electronic device as described in any one of [1] to [11], wherein in step (D), the electromagnetic wave shielding layer is formed on at least the opposing surface of the electronic component that is opposite to the circuit forming surface and the side surface connecting the circuit forming surface and the opposing surface.

[13]

A method for manufacturing an electronic device as described in any one of [1] to [12], wherein the resin constituting the substrate layer comprises one or more selected from the group consisting of polyester elastomers, polyamide elastomers, polyimide elastomers, polybutylene terephthalate, polyethylene terephthalate, polyethylene naphthalate and polyimide.

[14]

A method for manufacturing an electronic device as described in any one of [1] to [13], wherein the adhesive constituting the adhesive resin layer comprises one or more selected from (meth)acrylic adhesives, silicone adhesives, urethane adhesives, olefin adhesives and styrene adhesives.

According to the present invention, an electromagnetic wave shielding layer can be well formed on electronic parts and the manufacturing steps of electronic devices can be shortened.

10, 100: Electronic parts

10A, 100A: Circuit formation surface

10B: Electrode

20: Base material layer

30: Concavoconvex absorbent resin layer

40: Adhesive resin layer

50: Adhesive laminate film

60:Structure

70, 140: Electromagnetic wave shielding layer

110: Back grinding tape

120: Cutting tape

130: Tape for protecting circuit forming surface

150: Lower end

160: Adhesive

A~D: Steps

FIG1 is a flow chart showing an example of a method for manufacturing an electronic device of the present invention.

Figures 2(A) to 2(D) are cross-sectional views schematically showing an example of a method for manufacturing an electronic device according to an embodiment of the present invention.

FIG3 is a cross-sectional view schematically showing an example of a conventional method for manufacturing an electronic device.

Hereinafter, the embodiments of the present invention will be described using drawings. Furthermore, in all drawings, common symbols are used for the same components, and the description is omitted appropriately. In addition, the drawings are schematic diagrams and are not consistent with the actual dimensional ratios. In addition, the numerical range "A~B" means above A and below B unless otherwise specified. In addition, in this embodiment, the so-called "(meth)acrylic acid" refers to acrylic acid, methacrylic acid, or both acrylic acid and methacrylic acid.

FIG. 1 is a flow chart showing an example of a method for manufacturing an electronic device of the present invention. FIG. 2(A) to FIG. 2(D) are cross-sectional views schematically showing an example of a method for manufacturing an electronic device of an embodiment of the present invention.

The manufacturing method of the electronic device of this embodiment at least includes the following steps (A), (B), (C) and (D) in sequence. In steps (A), (B), (C) and (D), the same adhesive laminate film is used as the adhesive laminate film 50.

(A) A step of preparing a structure 60 having an electronic component 10 and an adhesive laminate film 50, wherein the electronic component 10 has a circuit forming surface 10A and is half-cut, and the adhesive laminate film 50 has a base layer 20 and an adhesive resin layer 40, and the adhesive resin layer 40 is attached to the circuit forming surface 10A of the electronic component 10 in a manner that protects the circuit forming surface 10A.

(B) A step of back grinding the surface opposite to the circuit forming surface 10A of the electronic component 10 while the electronic component 10 is attached to the adhesive laminate film 50

(C) The step of fully cutting the electronic component 10 while it is attached to the adhesive laminate film 50

(D) A step of forming an electromagnetic wave shielding layer 70 on the singulated electronic component 10 while the electronic component 10 is attached to the adhesive laminate film 50

As described above, according to the research of the inventors and others, it was found that in the previous method of manufacturing electronic devices, as shown in FIG3, when the electromagnetic wave shielding layer 140 is formed on the surface of the electronic component 100 while the circuit forming surface 100A of the electronic component 100 is protected by the circuit forming surface protection tape 130, the electromagnetic wave shielding layer 140 is sometimes not formed at the lower end 150 of the side surface of the electronic component 100. In this case, the electromagnetic wave shielding property of the electronic component 100 is poor.

The inventors of the present invention have conducted further research based on the above-mentioned viewpoints, and found that as shown in FIG3, when the electronic component 100 attached to the dicing tape 120 is rearranged on the circuit forming surface protection tape 130, the portion (adhesive layer) of the circuit forming surface protection tape 130 that is in contact with the lower end portion 150 of the side of the electronic component 100 sometimes bulges and covers the lower end portion 150 of the side of the electronic component 100. That is, according to the research of the inventors of the present invention, it is clear that the lower end portion 150 of the side of the electronic component 100 is covered by the adhesive 160 constituting the adhesive layer of the circuit forming surface protection tape 130, so that the electromagnetic wave shielding layer 140 is not formed at the lower end portion 150 of the side of the electronic component 100.

In addition, regarding the manufacturing method of an electronic device with electromagnetic wave shielding properties, as shown in Figure 3, the electronic component 100 is attached to the back grinding tape 110 to perform a back grinding step, and then the electronic component 100 is peeled off from the back grinding tape 110 and attached to the cutting tape 120 to perform a cutting step, and then the electronic component 100 is peeled off from the cutting tape 120 and arranged on the circuit forming surface protective tape 130 to perform an electromagnetic wave shielding layer forming step. Therefore, in the previous method for manufacturing electronic devices, three types of tapes are used to temporarily fix the electronic component 100, and the steps of attaching the electronic component 100 to each tape or peeling the electronic component 100 from each tape are included, and the number of steps is very large.

That is, the inventors and others have found that in the manufacturing method of electronic devices with electromagnetic wave shielding properties, there is room for improvement from the perspective of forming an electromagnetic wave shielding layer on electronic parts well and shortening the manufacturing steps of the electronic device.

The inventors of the present invention have repeatedly conducted intensive research to achieve the above-mentioned subject. As a result, it was found that by using the same adhesive multilayer film 50 as a film for protecting the circuit forming surface 10A of the electronic component 10 in the step of preparing a structure having a half-cut electronic component, the back grinding step, the full cutting step, and the electromagnetic wave shielding layer forming step, a part of the step of attaching the electronic component 10 to each tape or the step of peeling the electronic component 10 from each tape can be omitted, thereby suppressing the formation of the electromagnetic wave shielding layer in the lower end of the side of the electronic component 10.

If the same adhesive laminated film 50 is used as a film for protecting the circuit forming surface 10A of the electronic component 10 in the step of preparing a structure having half-cut electronic components, the back grinding step, the full cutting step, and the electromagnetic wave shielding layer forming step, the step of arranging the electronic component 100 attached to the cutting tape 120 as shown in FIG. 3 on the circuit forming surface protection tape 130 can be omitted. Therefore, the lower end of the side of the electronic component 10 will not be covered by the adhesive constituting the adhesive resin layer 40. Therefore, in the manufacturing method of the electronic device of this embodiment, the electromagnetic wave shielding layer 70 can be well formed to the lower end of the side of the electronic component 10.

In addition, in the manufacturing method of the electronic device of the present embodiment, by using the same adhesive laminate film 50 as a film for protecting the circuit forming surface 10A of the electronic component 10 in the step of preparing a structure having half-cut electronic components, the back grinding step, the full cutting step, and the electromagnetic wave shielding layer forming step, a part of the step of attaching the electronic component 10 to each tape or the step of peeling the electronic component 10 from each tape can be omitted.

As described above, according to the manufacturing method of the electronic device of this embodiment, an electromagnetic wave shielding layer can be well formed on the electronic parts and the manufacturing steps of the electronic device can be shortened.

1. Adhesive laminate film

The following describes the adhesive multilayer film 50 used in the manufacturing method of the electronic device of this embodiment.

<Base layer>

The base material layer 20 is provided for the purpose of improving the operability, mechanical properties, heat resistance and other properties of the adhesive laminate film 50.

The substrate layer 20 is not particularly limited, and an example thereof may be a resin film.

As the resin constituting the base material layer 20, a known thermoplastic resin can be used. For example, one or more of the following compounds can be cited: polyolefins such as polyethylene, polypropylene, poly(4-methyl-1-pentene), and poly(1-butene); polyesters such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate; polyamides such as nylon-6, nylon-66, and poly(m-xylylene adipate); polyacrylates; polymethacrylates; polyvinyl chloride; polyimides; polyetherimides; polyamide imides; ethylene-vinyl chloride; polyimides; polyetherimides; polyamide imides; poly ... Vinyl acetate copolymer; polyacrylonitrile; polycarbonate; polystyrene; ionomer; polysulfide; polyethersulfide; polyetheretherketone; polyphenylene sulfide; polyphenylene ether; polyester elastomer, polyamide elastomer, polyimide elastomer and other elastomers, etc.

Among these, from the viewpoint of achieving good transparency, preferably one or more selected from polypropylene, polyethylene terephthalate, polyethylene naphthalate, polyamide, polyimide, ethylene-vinyl acetate copolymer, polyester elastomer, polyamide elastomer, polyimide elastomer and polybutylene terephthalate are used, and more preferably one or more selected from polyethylene terephthalate, polyethylene naphthalate, polyester elastomer, polyamide elastomer, polyimide elastomer, polybutylene terephthalate and polyimide are used.

In addition, from the perspective of improving the balance between the properties such as flexibility or stretchability of the adhesive laminate film 50 and the heat resistance, the resin constituting the base layer 20 is preferably selected from one or more of polyester elastomers, polyamide elastomers, polyimide elastomers, and polybutylene terephthalate. Thereby, the stretchability or flexibility of the adhesive laminate film 50 is improved, and when the electronic component 10 and the adhesive laminate film 50 are peeled off after step (D), the adhesive laminate film 50 is further expanded in the in-plane direction, and the electronic component 10 is easily peeled off from the adhesive laminate film 50.

The melting point of the substrate layer 20 is preferably above 100°C. There is no particular upper limit on the melting point, and it can be selected based on processability, etc.

If the substrate layer 20 is used, even if the adhesive laminate film 50 is exposed to high temperature in step (D), deformation or melting of the adhesive laminate film 50 can be further suppressed.

The substrate layer 20 may be a single layer or may be two or more layers.

In addition, the resin film used to form the substrate layer 20 may be in the form of a stretched film or a film stretched in a uniaxial direction or a biaxial direction.

From the perspective of obtaining good film properties, the thickness of the substrate layer 20 is preferably greater than 10 μm and less than 500 μm, more preferably greater than 20 μm and less than 300 μm, and further preferably greater than 25 μm and less than 250 μm.

The substrate layer 20 may also be subjected to surface treatment in order to improve adhesion with other layers. Specifically, it may be subjected to corona treatment, plasma treatment, undercoat treatment, primer coat treatment, etc.

<Concave-convex absorbent resin layer>

The adhesive laminate film 50 of this embodiment preferably further has a concave-convex absorbent resin layer 30 between the base layer 20 and the adhesive resin layer 40.

The unevenness absorptive resin layer 30 is provided for the purpose of improving the tracking property of the adhesive laminated film 50 to the circuit forming surface 10A and improving the adhesion between the circuit forming surface 10A and the adhesive laminated film 50.

Here, according to the research of the inventors and others, the following topic was discovered: When an electromagnetic wave shielding layer is formed on the surface of an electronic component while the circuit forming surface of the electronic component is protected by a protective film, the conductive component used to form the electromagnetic wave shielding layer enters the circuit forming surface of the electronic component and adheres to the circuit, resulting in an electrical short circuit in the circuit. In addition, the larger the unevenness of the circuit forming surface, the more likely the circuit constituting the circuit forming surface is to have an electrical short circuit. In particular, when using an electronic component with a bump electrode formed on the circuit forming surface of the electronic component, there is a tendency for the circuit constituting the circuit forming surface to have an electrical short circuit.

The inventors of the present invention have repeatedly conducted intensive research to achieve the above-mentioned topic. As a result, it was found that when the adhesion between the electronic components and the protective film is insufficient, the conductive components used to form the electromagnetic wave shielding layer can easily enter the circuit forming surface of the electronic components, which can easily cause poor conduction of the circuit.

In particular, when using electronic components with relatively large bumps and depressions such as bump electrodes formed on the circuit forming surface, the protective film is likely to be insufficient in following the bumps and depressions of the circuit forming surface of the electronic component, and thus the adhesion between the electronic component and the protective film is likely to be insufficient. As a result, it was found that the conductive component used to form the electromagnetic wave shielding layer is likely to penetrate into the circuit forming surface of the electronic component, which is likely to cause poor conduction of the circuit constituting the circuit forming surface.

The inventors of the present invention and others have further repeatedly conducted research based on the above-mentioned insights. As a result, it was found that by using an adhesive multilayer film 50 having a base layer 20, a concave-convex absorptive resin layer 30 and an adhesive resin layer 40 in sequence as a film for protecting the circuit forming surface 10A of the electronic component 10, electrical short circuits on the circuit forming surface 10A can be suppressed, and an electronic device with electromagnetic wave shielding properties can be stably obtained.

That is, since the adhesive laminate film 50 further has the unevenness absorbing resin layer 30, the adhesive laminate film 50 can easily follow the circuit forming surface 10A of the electronic component 10, and the close contact between the adhesive laminate film 50 and the circuit forming surface 10A of the electronic component 10 can be improved. In this way, it is easy to follow the unevenness of the circuit forming surface 10A of the electronic component 10, and the gap between the adhesive laminate film 50 and the circuit forming surface 10A of the electronic component 10 can be further reduced. As a result, when the electromagnetic wave shielding layer 70 is formed on the surface of the electronic component 10, the conductive component used to form the electromagnetic wave shielding layer 70 can be suppressed from entering the circuit forming surface 10A of the electronic component 10, and the electrical short circuit of the circuit constituting the circuit forming surface 10A can be suppressed.

The resin constituting the unevenness absorbent resin layer 30 is not particularly limited as long as it exhibits unevenness absorbency, and for example, one or more of the group consisting of polyolefin resins, polystyrene resins, and (meth)acrylic resins can be cited.

In addition, the uneven absorbent resin layer 30 preferably includes a crosslinking resin. Since the uneven absorbent resin layer 30 includes a crosslinking resin, the uneven absorbent resin layer 30 can be crosslinked before step (D) to improve the heat resistance. As a result, even if the adhesive laminate film 50 is exposed to a high temperature in step (D), the deformation or melting of the adhesive laminate film 50 can be further suppressed.

The crosslinking resin of the present embodiment is not particularly limited as long as it can form the concave-convex absorptive resin layer 30 and has improved heat resistance by crosslinking under external stimulation such as heat or light. For example, one or more of the following compounds can be used: ethylene-α-olefin copolymers containing ethylene and α-olefins having 3 to 20 carbon atoms, high-density ethylene resins, low-density ethylene resins, medium-density ethylene resins, ultra-low-density ethylene resins, linear low-density polyethylene (LLDPE) resins, propylene (co)polymers, 1-butene (co)polymers, 4-methylpentene-1 (co)polymers, ethylene-cyclic olefin copolymers, ethylene-α-olefin-cyclic olefin copolymers, ethylene-α-olefin-cyclic olefin copolymers, Olefin resins such as non-conjugated polyolefin copolymers, ethylene-α-olefin-conjugated polyolefin copolymers, ethylene-aromatic vinyl copolymers, ethylene-α-olefin-aromatic vinyl copolymers, etc.; ethylene-unsaturated carboxylic acid anhydride copolymers, ethylene-α-olefin-unsaturated carboxylic acid anhydride copolymers, etc. ethylene-carboxylic acid anhydride copolymers; ethylene-epoxy copolymers such as ethylene-epoxy-containing unsaturated compound copolymers, ethylene-α-olefin-epoxy-containing unsaturated compound copolymers; ethylene-ethyl (meth)acrylate copolymers, ethylene-methyl (meth)acrylate copolymers, ethylene-propyl (meth)acrylate copolymers, ethylene-butyl (meth)acrylate copolymers, ethylene-hexyl (meth)acrylate copolymers, ethylene-2-hydroxyethyl (meth)acrylate copolymers, ethylene-2-hydroxypropyl (meth)acrylate copolymers, ethylene- (Meth) acrylic acid ester copolymers, such as ethylene (meth) acrylic acid ester copolymers; ethylene (meth) acrylic acid copolymers, ethylene (meth) acrylic acid copolymers, ethylene (cis) succinic acid copolymers, ethylene (fumaric acid copolymers, ethylene (butyric acid copolymers), ethylene (butyric acid copolymers), ethylene (butyric acid copolymers), ethylene (ethylene unsaturated acid copolymers; ethylene (vinyl acetate copolymers, ethylene (vinyl propionate copolymers, ethylene (vinyl butyrate copolymers, ethylene (vinyl stearate copolymers), ethylene (vinyl ester copolymers); ethylene (styrene copolymers); (meth) acrylic acid ester (co)polymers, such as unsaturated carboxylic acid ester (co)polymers; ethylene (metal salt of acrylic acid) copolymers, ethylene (metal salt of methacrylic acid) copolymers, plasma polymer resins; urethane resins; silicone resins; acrylic resins; methacrylic resins; cyclic olefin (co)polymers; α-olefins; aromatic vinyl ester compounds; aromatic polyolefin copolymers; ethylene (meth) acrylate (co)polymers. α-olefins. Aromatic vinyl ester compounds; Aromatic polyolefin copolymers; Ethylene. Aromatic vinyl ester compounds. Aromatic polyolefin copolymers; Styrene resins; Acrylonitrile. Butadiene. Styrene copolymers; Styrene. Conjugated diene copolymers; Acrylonitrile. Styrene copolymers; Acrylonitrile. Ethylene. α-olefins. Non-conjugated polyolefins. Styrene copolymers; Acrylonitrile. Ethylene. α-olefins. Conjugated polyolefins. Styrene copolymers; Methacrylic acid. Styrene copolymer; ethylene terephthalate resin; fluorine resin; polyester carbonate; polyvinyl chloride; polyvinylidene chloride; polyolefin thermoplastic elastomer; polystyrene thermoplastic elastomer; polyurethane thermoplastic elastomer; 1,2-polybutadiene thermoplastic elastomer; trans-polyisoprene thermoplastic elastomer; chlorinated polyethylene thermoplastic elastomer; liquid crystal polyester; polylactic acid, etc.

Among these, in terms of the ease of crosslinking using a crosslinking agent such as an organic peroxide, it is preferred to use one or more selected from the following compounds: ethylene-α-olefin copolymers containing ethylene and α-olefins having 3 to 20 carbon atoms, low-density ethylene resins, medium-density ethylene resins, ultra-low-density ethylene resins, linear low-density polyethylene (LLDPE) resins, ethylene-cyclic olefin copolymers, ethylene-α-olefin-cyclic olefin copolymers, ethylene-α-olefin-non-conjugated polyolefin copolymers, ethylene-α-olefin-conjugated polyolefin copolymers, ethylene-aromatic vinyl copolymers, ethylene-α-olefin-aromatic vinyl copolymers and other olefin resins, ethylene-unsaturated carboxylic acid anhydride copolymers, ethylene-α-olefin- Unsaturated carboxylic acid anhydride copolymers, ethylene. epoxy-containing unsaturated compound copolymers, ethylene. α-olefin. epoxy-containing unsaturated compound copolymers, ethylene. vinyl acetate copolymers, ethylene. acrylic acid copolymers, ethylene. methacrylic acid copolymers, etc. ethylene. unsaturated carboxylic acid copolymers, 1,2-polybutadiene-based thermoplastic elastomers.

It is more preferable to use one or more of the following compounds: ethylene-α-olefin copolymers containing ethylene and α-olefins with 3 to 20 carbon atoms, low-density ethylene resins, ultra-low-density ethylene resins, linear low-density polyethylene (LLDPE) resins, ethylene-α-olefin-non-conjugated polyolefin copolymers, ethylene-α-olefin-conjugated polyolefin copolymers, ethylene-unsaturated carboxylic acid anhydride copolymers, ethylene-α-olefin-unsaturated carboxylic acid anhydride copolymers, ethylene-epoxy-containing unsaturated compound copolymers, ethylene-α-olefin-epoxy-containing unsaturated compound copolymers, ethylene-vinyl acetate copolymers, ethylene-acrylic acid copolymers, ethylene-methacrylic acid copolymers and other ethylene-unsaturated carboxylic acid copolymers.

It is further preferred to use one or more of the following compounds: ethylene-α-olefin copolymers containing ethylene and α-olefins with 3 to 20 carbon atoms, low-density ethylene resins, ultra-low-density ethylene resins, linear low-density polyethylene (LLDPE) resins, ethylene-α-olefin-non-conjugated polyolefin copolymers, ethylene-α-olefin-conjugated polyolefin copolymers, ethylene-vinyl acetate copolymers, ethylene-acrylic acid copolymers, ethylene-methacrylic acid copolymers, and other ethylene-unsaturated carboxylic acid copolymers.

Among these, at least one selected from ethylene-α-olefin copolymers and ethylene-vinyl acetate copolymers can be preferably used. Furthermore, the resins described in this embodiment can be used alone or in combination.

Regarding the α-olefin of the ethylene-α-olefin copolymer containing ethylene and an α-olefin having 3 to 20 carbon atoms that can be used as the crosslinking resin in the present embodiment, generally, one α-olefin having 3 to 20 carbon atoms can be used alone or in combination of two or more α-olefins having 3 to 20 carbon atoms. Among them, α-olefins having 10 or less carbon atoms are preferred, and α-olefins having 3 to 8 carbon atoms are particularly preferred. Examples of the α-olefin include propylene, 1-butene, 1-pentene, 1-hexene, 3-methyl-1-butene, 3,3-dimethyl-1-butene, 4-methyl-1-pentene, 1-octene, 1-decene, 1-dodecene, and the like. Among these, propylene, 1-butene, 1-pentene, 1-hexene, 4-methyl-1-pentene and 1-octene are preferred in terms of ease of acquisition. Furthermore, the ethylene-α-olefin copolymer may be a random copolymer or a block copolymer, but from the perspective of softness, a random copolymer is preferred.

The thickness of the unevenness absorbing resin layer 30 is not particularly limited as long as it is a thickness that can bury the unevenness of the circuit forming surface 10A of the electronic component 10. For example, it is preferably 10μm or more and 1000μm or less, more preferably 20μm or more and 900μm or less, further preferably 30μm or more and 800μm or less, and particularly preferably 50μm or more and 700μm or less.

Here, when the circuit forming surface of the electronic component includes a bump electrode, when an electromagnetic wave shielding layer is formed on the surface of the electronic component, there is a tendency for the circuit constituting the circuit forming surface to be easily short-circuited. However, by using an adhesive laminated film 50 further having a concave-convex absorptive resin layer 30, electrical short circuits can also be suppressed for the electronic component 10 including a bump electrode on the circuit forming surface 10A.

In addition, when the height of the bump electrode on the circuit forming surface 10A of the electronic component 10 is set to H [μm] and the thickness of the unevenness absorbing resin layer 30 is set to d [μm], H/d is preferably less than 1, more preferably less than 0.85, and further preferably less than 0.7. If H/d is less than the upper limit, the thickness of the adhesive laminate film 50 can be made thinner and the unevenness absorption property can be made better.

The lower limit of H/d is not particularly limited, and is, for example, greater than 0.01. The height of the bump electrode is usually greater than 2μm and less than 600μm.

Here, according to the research of the inventors and others, it is clear that the larger the unevenness of the circuit forming surface, the easier it is for the circuit constituting the circuit forming surface to have an electrical short circuit. Therefore, when the height of the bump electrode is preferably 10μm or more, more preferably 30μm or more, further preferably 50μm or more, further preferably 80μm or more, and particularly preferably 100μm or more, the effect of the manufacturing method of the electronic device of this embodiment can be further and more effectively obtained.

<Adhesive resin layer>

The adhesive resin layer 40 is a layer provided on one side of the base material layer 20 or the uneven absorptive resin layer 30, and is a layer that contacts and adheres to the circuit forming surface 10A of the electronic component 10 when the adhesive laminate film 50 is attached to the circuit forming surface 10A of the electronic component 10.

The adhesive constituting the adhesive resin layer 40 can be exemplified by (meth)acrylic adhesives, silicone adhesives, urethane adhesives, olefin adhesives, styrene adhesives, etc. Among these, in terms of the ease of adjusting the adhesive force, a (meth)acrylic adhesive using a (meth)acrylic polymer as a base polymer is preferred.

In addition, as the adhesive constituting the adhesive resin layer 40, a radiation cross-linking adhesive whose adhesive force is reduced by radiation can also be used. The adhesive resin layer 40 formed by the radiation cross-linking adhesive is cross-linked by radiation irradiation, and the adhesive force is significantly reduced. Therefore, in the step (F) of peeling the electronic component 10 and the adhesive laminate film 50 described later, the electronic component 10 can be easily peeled off from the adhesive resin layer 40. Examples of radiation include ultraviolet rays, electron beams, infrared rays, etc.

The radiation cross-linking adhesive is preferably an ultraviolet cross-linking adhesive.

Examples of (meth)acrylic polymers contained in (meth)acrylic adhesives include homopolymers of (meth)acrylic acid ester compounds, copolymers of (meth)acrylic acid ester compounds and comonomers, etc. Examples of (meth)acrylic acid ester compounds include methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, hydroxyethyl (meth)acrylate, hydroxypropyl (meth)acrylate, dimethylaminoethyl (meth)acrylate, glycidyl (meth)acrylate, etc. These (meth)acrylate compounds may be used alone or in combination of two or more.

In addition, the copolymers constituting the (meth)acrylic copolymers include, for example: vinyl acetate, (meth)acrylonitrile, styrene, (meth)acrylic acid, itaconic acid, (meth)acrylamide, hydroxymethyl (meth)acrylamide, maleic anhydride, etc. These copolymers may be used alone or in combination of two or more.

The radiation cross-linking adhesive includes, for example: the (meth) acrylic polymer, a cross-linking compound (a component having a carbon-carbon double bond), and a photopolymerization initiator or a thermal polymerization initiator.

Examples of crosslinking compounds include: monomers, oligomers or polymers that have carbon-carbon double bonds in the molecule and can be crosslinked by free radical polymerization. Examples of the crosslinking compounds include: esters of (meth)acrylic acid and polyols such as trihydroxymethylpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, tetraethylene glycol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, and dipentaerythritol hexa(meth)acrylate; ester (meth)acrylate oligomers; isocyanurates or isocyanurate compounds such as 2-propylene di-3-butenyl cyanurate, 2-hydroxyethyl bis(2-(meth)acryloyloxyethyl) isocyanurate, and tris(2-methacryloyloxyethyl) isocyanurate.

Furthermore, when the (meth)acrylic acid polymer is a radiation cross-linked polymer having a carbon-carbon double bond on the side chain of the polymer, the cross-linking compound may not be added.

The content of the crosslinking compound is preferably 5 to 900 parts by mass, more preferably 5 to 100 parts by mass, and further preferably 10 to 50 parts by mass relative to 100 parts by mass of the (meth)acrylic polymer. When the content of the crosslinking compound is within the above range, the adjustment of the adhesive force becomes easier than when the content is less than the above range, and the storage stability is less likely to decrease due to excessive sensitivity to heat or light than when the content is more than the above range.

The photopolymerization initiator can be any compound that generates free radicals by cleavage upon exposure to radiation, for example: benzoin alkyl ethers such as benzoin methyl ether, benzoin isopropyl ether, and benzoin isobutyl ether; aromatic ketones such as benzyl, benzoin, benzophenone, and α-hydroxycyclohexyl phenyl ketone; aromatic ketones such as benzyl dimethyl ketal; polyvinyl benzophenone; thioxanthrone such as chlorothioxanthrone, dodecylthioxanthrone, dimethylthioxanthrone, and diethylthioxanthrone, etc.

Examples of thermal polymerization initiators include organic peroxide derivatives or azo-based polymerization initiators. Organic peroxide derivatives are preferred because they do not generate nitrogen when heated. Examples of thermal polymerization initiators include ketone peroxides, peroxyketal, hydroperoxides, dialkyl peroxides, diacyl peroxides, peroxyesters, and peroxydicarbonates.

Crosslinking agents can also be added to the adhesive. Examples of crosslinking agents include: epoxy compounds such as sorbitol polyglycidyl ether, polyglycerol polyglycidyl ether, pentaerythritol polyglycidyl ether, and diglycerol polyglycidyl ether; aziridine compounds such as tetrahydroxymethylmethane-tri-β-aziridine propionate, trihydroxymethylpropane-tri-β-aziridine propionate, N,N'-diphenylmethane-4,4'-bis(1-aziridine carboxylamide), and N,N'-hexamethylene-1,6-bis(1-aziridine carboxylamide); isocyanate compounds such as tetramethylene diisocyanate, hexamethylene diisocyanate, and polyisocyanate.

From the perspective of improving the heat resistance of the adhesive resin layer 40 or balancing the adhesion, the content of the crosslinking agent is preferably 0.1 parts by mass or more and 10 parts by mass or less relative to 100 parts by mass of the (meth)acrylic polymer.

The thickness of the adhesive resin layer 40 is not particularly limited, for example, preferably greater than 1 μm and less than 100 μm, more preferably greater than 3 μm and less than 50 μm.

The adhesive resin layer 40 can be formed, for example, by applying an adhesive coating liquid on the base material layer 20 or the uneven absorptive resin layer 30.

The adhesive coating liquid can be applied by any known coating method, such as a roller coater method, a reverse roller coater method, a gravure roller method, a rod coater method, a notched wheel coater method, a die coater method, etc. There is no particular restriction on the drying conditions of the applied adhesive, but generally speaking, it is preferably dried at a temperature range of 80°C to 200°C for 10 seconds to 10 minutes. It is further preferably dried at 80°C to 170°C for 15 seconds to 5 minutes. In order to fully promote the crosslinking reaction between the crosslinking agent and the adhesive, the adhesive coating liquid can also be heated at 40℃~80℃ for about 5 hours to 300 hours after drying.

The total light transmittance of the adhesive laminate film 50 of this embodiment is preferably 85% or more, and more preferably 90% or more. Thus, the adhesive laminate film 50 can be given transparency. Moreover, by setting the total light transmittance of the adhesive laminate film 50 to be above the lower limit, when the adhesive laminate film 50 of this embodiment is irradiated with radiation from the substrate layer 20 side, the adhesive resin layer 40 can be irradiated with radiation more effectively, and the radiation irradiation efficiency can be improved. Furthermore, the total light transmittance of the adhesive laminate film 50 can be measured according to Japanese Industrial Standards (JIS) K7105 (1981).

In terms of the balance between mechanical properties and operability, the overall thickness of the adhesive multilayer film 50 of this embodiment is preferably greater than 25 μm and less than 1100 μm, more preferably greater than 100 μm and less than 900 μm, and further preferably greater than 200 μm and less than 800 μm.

The adhesive laminate film 50 of this embodiment can be provided with an adhesive layer (not shown) between each layer. The adhesive layer can improve the adhesion between each layer.

Next, an example of a method for manufacturing the adhesive multilayer film 50 of this embodiment is described.

First, an uneven absorbent resin layer 30 is formed on one side of the base material layer 20 by extrusion lamination. Then, an adhesive coating liquid is applied on the uneven absorbent resin layer 30 and dried to form an adhesive resin layer 40, thereby obtaining an adhesive laminate film 50.

In addition, the base layer 20 and the uneven absorbent resin layer 30 can be formed by co-extrusion molding, or the film-like base layer 20 and the film-like uneven absorbent resin layer 30 can be formed by laminating (stacking).

2. Manufacturing method of electronic device

Next, each step of the method for manufacturing the electronic device of this embodiment is described.

(Step (A))

First, a structure 60 having an electronic component 10 and an adhesive laminate film 50 is prepared. The electronic component 10 has a circuit forming surface 10A and is half-cut. The adhesive laminate film 50 has an adhesive resin layer 40 attached to the circuit forming surface 10A of the electronic component 10 in a manner that protects the circuit forming surface 10A.

The structure 60 can be manufactured, for example, by performing step (A1) or step (A2), wherein the electronic component 10 having the circuit forming surface 10A is half-cut, and then the adhesive laminate film 50 is attached to the circuit forming surface 10A of the half-cut electronic component 10, and the electronic component 10 attached to the adhesive laminate film 50 is half-cut.

The number of electronic components 10 attached to the adhesive resin layer 40 of the adhesive laminate film 50 may be one or more.

The following is a description of the manufacturing method of the structure 60.

The half-cutting of the electronic component 10 can be performed under known conditions using a cutting blade (cutting saw), laser light, plasma, etc.

In the half-cutting of step (A1), in order to avoid cutting, it is preferable to use a cutting blade to cut a notch in the middle of the depth direction of the electronic component 10. For example, the notch is cut at a thickness less than the thickness of the electronic component 10. Alternatively, it can be a stealth cutting as described later.

In addition, in the embodiment of step (A2), the half-cutting of the electronic component 10 includes an operation of providing a deteriorated area of the electronic component 10 (e.g., a semiconductor substrate) that does not reach the degree of cutting of the electronic component 10 by irradiating laser light or plasma (hereinafter referred to as "invisible cutting"). According to the invisible cutting, the electronic component 10 can be half-cut through the pre-attached adhesive laminate film 50, so it is preferred.

In this invisible cutting, the electronic component 10 only deteriorates and becomes brittle, but does not reach the level of being divided into multiple parts. In the following step, the electronic component 10 is divided by the expansion of the adhesive laminate film 50 to obtain multiple divided electronic components 10. In the case of step (A1), the half-cut electronic component 10 is attached to the adhesive resin layer 40 of the adhesive laminate film 50. In addition, in the case of step (A2), the electronic component 10 that has not been half-cut is attached to the adhesive resin layer 40 of the adhesive laminate film 50.

The electronic component 10 attached to the adhesive multilayer film 50 is not particularly limited as long as it has a circuit forming surface and requires electromagnetic wave shielding properties. Examples thereof include: semiconductor wafers, mold wafers, mold panels, mold array packages, semiconductor substrates, etc.

In addition, as semiconductor substrates, for example, there can be listed: silicon substrates, sapphire substrates, germanium substrates, gallium-arsenic substrates, gallium-phosphorus substrates, gallium-arsenic-aluminum substrates, gallium-arsenic substrates, lithium tantalum substrates, etc.

In addition, the electronic component 10 can be an electronic component for any purpose, such as electronic components for logic purposes (such as communication purposes, high-frequency signal processing purposes, etc.), memory purposes, sensor purposes, power supply purposes, etc. Only one of these can be used, or two or more can be used in combination.

The circuit forming surface 10A of the electronic component 10 becomes a concave-convex surface by having an electrode 10B, for example.

In addition, the electrode 10B is joined to the electrode formed on the mounting surface when the electronic device is mounted on the mounting surface to form an electrical connection between the electronic device and the mounting surface (mounting surface of a printed circuit board, etc.).

As the electrode 10B, for example, there can be listed bump electrodes such as ball bumps, printed bumps, bolt bumps, plated bumps, and column bumps. That is, the electrode 10B is usually a bump electrode. These bump electrodes can be used alone or in combination of two or more.

In addition, the metal types that constitute the bump electrode are not particularly limited, and examples thereof include silver, gold, copper, tin, lead, bismuth, and alloys thereof. These metal types may be used alone or in combination of two or more.

(Step (B))

While attached to the adhesive laminate film 50, the surface opposite to the circuit forming surface 10A of the electronic component 10 (hereinafter also referred to as the back surface) is back-ground.

Here, back grinding refers to thinning to a predetermined thickness without breaking or damaging the electronic component 10.

The back grinding of the electronic component 10 can be performed using a known method. For example, a method can be cited in which the structure 60 is fixed on a chuck of a grinding machine, etc., and the back side (circuit non-forming surface) of the electronic component 10 is ground.

The back grinding method is not particularly limited, and for example, known grinding methods such as through feed method and in feed method can be used. Various grinding methods are performed while supplying water to the electronic component 10 and the grinding stone for cooling.

(Step (C))

Then, the electronic component 10 that has been back-grinded is fully cut while being attached to the adhesive laminate film 50. The cutting of the electronic component 10 can be performed using a known method. For example, by expanding the adhesive laminate film 50 and dividing the electronic component 10 that has been half-cut, the electronic component 10 can be fully cut.

The electronic component 10 is not divided into a plurality of electronic components 10 by half-cutting in step (A). In step (C), the electronic component 10 is divided into a plurality of divided electronic components 10 by expanding the adhesive laminate film 50 .

In addition, in the manufacturing method of the electronic device of this embodiment, in step (B), when the back of the half-cut electronic component 10 is ground, the grinding reaches the half-cut incision, and the state of full cutting is also included in the step (C) of full cutting of the electronic component 10.

(Step (D))

Then, an electromagnetic wave shielding layer 70 is formed on the singulated electronic component 10 while being attached to the adhesive laminate film 50.

In step (D), for example, as shown in FIG. 2 (D), an electromagnetic wave shielding layer 70 is formed on the opposing surface of the electronic component 10 that is opposite to the circuit forming surface 10A and on the side surface connecting the circuit forming surface 10A and the opposing surface.

The method for forming the electromagnetic wave shielding layer 70 on the electronic component 10 is not particularly limited, and a known method can be used. For example, sputtering, evaporation, spraying, electroplating, and non-electroplating methods can be listed.

Examples of sputtering methods include direct current (DC) sputtering, radio frequency (RF) sputtering, magnetron sputtering, ion beam sputtering, and reactive sputtering. Only one of these methods may be used, or two or more of them may be used in combination.

As the evaporation method, for example, vacuum evaporation method, chemical vapor deposition method (CVD (Chemical Vapor Deposition) method), etc. can be listed. Only one of these methods can be used, or two or more of them can be used in combination.

Examples of vacuum deposition methods include molecular beam epitaxy (MBE (Molecular Beam Epitaxy) method) and physical vapor deposition (PVD (Physical Vapor Deposition) method). Only one of these methods may be used, or two or more may be used in combination.

Examples of CVD methods include thermal CVD, catalytic CVD, optical CVD, plasma CVD, laser CVD, epitaxial CVD, atomic layer CVD, organometallic CVD, and chloride CVD. Only one of these methods may be used, or two or more may be used in combination.

Among these various dry film forming methods, magnetron sputtering method, plasma CVD method, etc. are preferred from the viewpoint of being able to suppress the load temperature to a lower level.

The material constituting the electromagnetic wave shielding layer 70 is preferably conductive. Specifically, it is preferably conductive with a resistivity of 10000μΩ.cm or less at 20°C. The resistivity is more preferably 200μΩ.cm or less, and particularly preferably 100μΩ.cm or less.

The conductive component constituting the electromagnetic wave shielding layer 70 is not particularly limited, but is preferably a metal, for example, Mg, Al, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Sb, W, Re, Ir, Pt, Au, Bi, etc., alloys containing two or more metals selected from these metals, oxides (ITO ( _{In2O3 -SnO2 )} , ATO ( _SnO2 -Sb), FTO ( _SnO2 -F), etc.), etc. These can be used alone or in combination of two or more.

Among these, preferred are metal films containing one or more of Au, Pt, Ag, Cu, Ni, Al and Fe, ITO films and ATO films.

The thickness of the electromagnetic wave shielding layer 70 is not particularly limited as long as it can exert the shielding properties, and is preferably less than 100μm, and more preferably less than 50μm. On the other hand, the lower limit of the thickness of the electromagnetic wave shielding layer 70 is not particularly limited, and is preferably greater than 0.5μm.

(Step (E))

When the electromagnetic wave shielding layer 70 is formed in the step (D), the uneven absorptive resin layer 30 is heated to a high temperature by sputtering or evaporation. In addition, in the electroplating method or the electroless plating method, the uneven absorptive resin layer 30 is sometimes still exposed to a high temperature by the post-step of annealing the electromagnetic wave shielding layer 70. Therefore, in the manufacturing method of the electronic device of the present embodiment, it is preferable to further include a step (E) between the step (A) and the step (D), wherein the step (E) is to improve the heat resistance of the uneven absorptive resin layer 30 by crosslinking the uneven absorptive resin layer 30. Thus, even if the adhesive laminate film 50 is exposed to high temperature in step (D), deformation or melting of the adhesive laminate film 50 can be further suppressed. If the timing of performing step (E) is between step (A) and step (D), there is no particular limitation and it can be performed at any time.

As a crosslinking method for the concavoconvex absorbent resin layer 30, there is no particular limitation as long as it is a method that can crosslink the crosslinkable resin, and examples thereof include crosslinking using a free radical polymerization initiator; crosslinking using sulfur or sulfur compounds; crosslinking using ultraviolet rays, electron beams, gamma rays, and other radiation.

Crosslinking using a radical polymerization initiator can use a radical polymerization initiator used for crosslinking of a crosslinking resin. As the radical polymerization initiator, a known thermal radical polymerization initiator, a photoradical polymerization initiator, and a combination of these can be used.

When sulfur or a sulfur-based compound is used to crosslink the uneven absorbent resin layer 30, a vulcanization accelerator, a vulcanization accelerator auxiliary, etc. may be formulated into the uneven absorbent resin layer 30 to perform crosslinking.

In addition, in any crosslinking method, a crosslinking aid can be formulated into the uneven absorbent resin layer 30 to crosslink the uneven absorbent resin layer 30.

(Step (F))

In addition, in the manufacturing method of the electronic device of this embodiment, a step (F) of peeling the electronic component 10 from the adhesive laminate film 50 can be further performed after step (D). By performing the step (F), the electronic component 10 can be peeled off from the adhesive laminate film 50.

The electronic component 10 and the adhesive laminate film 50 can be peeled off using a known method.

In step (F), it is preferred to peel off the electronic component 10 from the adhesive laminate film 50 while expanding the area of the adhesive laminate film 50 to which the electronic component 10 is attached in the in-plane direction of the film to expand the interval between adjacent electronic components 10.

As a result, the distance between adjacent electronic components 10 is enlarged, so that the electronic components 10 can be easily peeled off from the adhesive laminate film 50. Furthermore, due to the shear stress between the electronic components 10 and the adhesive resin layer 40 generated by the expansion of the adhesive resin layer 40 in the in-plane direction, the adhesion between the electronic components 10 and the adhesive resin layer 40 is reduced, so that the electronic components 10 can be easily peeled off from the adhesive laminate film 50.

(Step (G))

In the manufacturing method of the electronic device of this embodiment, the following step (G) can be further performed: by irradiating the adhesive resin layer 40 with radiation before step (F), the adhesive resin layer 40 is cross-linked, thereby reducing the adhesion of the adhesive resin layer 40 to the electronic component 10. If the timing of performing step (G) is between step (A) and step (F), there is no special limitation, and it can be performed at any time.

By performing step (G), the electronic component 10 can be easily peeled off from the adhesive resin layer 40. In addition, the surface of the electronic component 10 can be prevented from being contaminated by the adhesive component constituting the adhesive resin layer 40.

The radiation is irradiated, for example, on the surface of the self-adhesive laminate film 50 that is opposite to the surface of the adhesive resin layer 40.

(Other steps)

The manufacturing method of the electronic device of this embodiment may also include other steps other than those described above. The other steps may use the steps known in the manufacturing method of the electronic device.

For example, after the back grinding step (B), a protective film may be attached to the ground surface (circuit non-forming surface) and then the film may be hardened to form a back protective layer.

In addition, after performing step (F), the obtained electronic component 10 may be mounted on a mounting substrate (printed substrate, etc.), or any steps commonly performed in the manufacturing steps of electronic components such as wire bonding and sealing may be performed.

The above has described the implementation forms of the present invention, but these are examples of the present invention, and various structures other than those described above may also be adopted.

Furthermore, the present invention is not limited to the above-mentioned implementation forms, and modifications and improvements within the scope of achieving the purpose of the present invention are included in the present invention.

This application claims priority based on Japanese patent application No. 2018-175939 filed on September 20, 2018, and all the disclosures therein are incorporated into this application.

A~D: Steps

Claims (15)

A method for manufacturing an electronic device comprises: step (A), preparing a structure including an electronic component and an adhesive laminate film, wherein the electronic component has a circuit forming surface and is half-cut, the adhesive laminate film has a base layer and an adhesive resin layer, and the adhesive resin layer is attached to the circuit forming surface of the electronic component in a manner to protect the circuit forming surface; step (B), while the electronic component is attached to the adhesive laminate film, back grinding the surface opposite to the circuit forming surface of the electronic component; step (C), while the electronic component is attached to the adhesive laminate film, full cutting the electronic component Cutting; and step (D), forming an electromagnetic wave shielding layer on the singulated electronic component in a state of being attached to the adhesive laminate film, in the step (A), the step (B), the step (C) and the step (D), the same adhesive laminate film is used as the adhesive laminate film, the adhesive laminate film further has a concave-convex absorptive resin layer between the substrate layer and the adhesive resin layer, and further includes step (E) between the step (A) and the step (D), the step (E) is to improve the heat resistance of the concave-convex absorptive resin layer by crosslinking the concave-convex absorptive resin layer. A method for manufacturing an electronic device, comprising: step (A), preparing a structure including an electronic component and an adhesive laminate film, wherein the electronic component has a circuit forming surface and is half-cut, the adhesive laminate film has a base layer and an adhesive resin layer, and the adhesive resin layer is attached to the circuit forming surface of the electronic component in a manner to protect the circuit forming surface; step (B), while the surface is attached to the adhesive laminate film, back grinding the surface opposite to the circuit forming surface of the electronic component; step (B) Step (C), fully cutting the electronic component while being attached to the adhesive laminate film; and step (D), forming an electromagnetic wave shielding layer on the singulated electronic component while being attached to the adhesive laminate film. In step (A), step (B), step (C) and step (D), the same adhesive laminate film is used as the adhesive laminate film. In step (C), the half-cut electronic component is divided by expanding the adhesive laminate film. The manufacturing method of the electronic device as described in item 1 or item 2 of the patent application scope, wherein the step (A) comprises: step (A1), half-cutting the electronic component having a circuit forming surface, and then attaching the adhesive laminate film to the circuit forming surface of the half-cut electronic component; or step (A2), attaching the adhesive laminate film to the circuit forming surface of the electronic component having a circuit forming surface, and then half-cutting the electronic component attached to the adhesive laminate film. As described in the second item of the patent application scope, the manufacturing method of the electronic device, wherein the adhesive laminate film further has a concave-convex absorptive resin layer between the substrate layer and the adhesive resin layer. The method for manufacturing an electronic device as described in item 4 of the patent application scope further includes a step (E) between the step (A) and the step (D), wherein the step (E) is to improve the heat resistance of the concave-convex absorbent resin layer by cross-linking the concave-convex absorbent resin layer. A method for manufacturing an electronic device as described in item 1, item 4 or item 5 of the patent application scope, wherein the concave-convex absorptive resin layer contains a cross-linking resin. A method for manufacturing an electronic device as described in item 1, item 4 or item 5 of the patent application scope, wherein the thickness of the concave-convex absorptive resin layer is greater than 10 μm and less than 1000 μm. The method for manufacturing an electronic device as described in item 1 or 2 of the patent application scope further includes step (F) after step (D), wherein step (F) is to peel off the electronic component from the adhesive laminate film. The method for manufacturing an electronic device as described in Item 8 of the patent application scope, wherein in the step (F), the electronic component is peeled off from the adhesive laminate film while the area of the adhesive laminate film to which the electronic component is attached is expanded in the in-plane direction of the film to expand the interval between adjacent electronic components. A method for manufacturing an electronic device as described in item 1 or 2 of the patent application, wherein the circuit forming surface of the electronic component includes a bump electrode. A method for manufacturing an electronic device as described in item 10 of the patent application, wherein the adhesive laminate film further has a concave-convex absorptive resin layer between the substrate layer and the adhesive resin layer, and when the height of the bump electrode is set to H μm and the thickness of the concave-convex absorptive resin layer is set to d μm, H/d is greater than 0.01 and less than 1. The manufacturing method of the electronic device as described in item 1 or 2 of the patent application scope, wherein in the step (D), the electromagnetic wave shielding layer is formed on the electronic component using at least one method selected from sputtering, evaporation, spraying, electroplating and non-electroplating. A method for manufacturing an electronic device as described in item 1 or 2 of the patent application scope, wherein in the step (D), the electromagnetic wave shielding layer is formed on at least the opposite surface of the electronic component that is opposite to the circuit forming surface and the side surface connecting the circuit forming surface and the opposite surface. A method for manufacturing an electronic device as described in item 1 or 2 of the patent application, wherein the resin constituting the substrate layer comprises one or more selected from the group consisting of polyester elastomers, polyamide elastomers, polyimide elastomers, polybutylene terephthalate, polyethylene terephthalate, polyethylene naphthalate and polyimide. A method for manufacturing an electronic device as described in item 1 or 2 of the patent application, wherein the adhesive constituting the adhesive resin layer comprises one or more selected from (meth)acrylic adhesives, silicone adhesives, urethane adhesives, olefin adhesives and styrene adhesives.

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