TW201800242A - Surface-treated copper foil and copper-clad laminate produced using same - Google Patents

Surface-treated copper foil and copper-clad laminate produced using same Download PDF

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TW201800242A
TW201800242A TW106103192A TW106103192A TW201800242A TW 201800242 A TW201800242 A TW 201800242A TW 106103192 A TW106103192 A TW 106103192A TW 106103192 A TW106103192 A TW 106103192A TW 201800242 A TW201800242 A TW 201800242A
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copper foil
layer
insulating substrate
silane
range
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TW106103192A
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TWI704048B (en
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佐藤章
宇野岳夫
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古河電氣工業股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar form; Layered products having particular features of form
    • B32B3/26Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar form; Layered products having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
    • B32B3/30Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar form; Layered products having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by a layer formed with recesses or projections, e.g. hollows, grooves, protuberances, ribs
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60Electroplating characterised by the structure or texture of the layers
    • C25D5/605Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/20Layered products comprising a layer of metal comprising aluminium or copper
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00Coating not provided for in groups C23C2/00 - C23C24/00
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48After-treatment of electroplated surfaces
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/06Wires; Strips; Foils
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/06Wires; Strips; Foils
    • C25D7/0614Strips or foils
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/389Improvement of the adhesion between the insulating substrate and the metal by the use of a coupling agent, e.g. silane
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2255/00Coating on the layer surface
    • B32B2255/06Coating on the layer surface on metal layer
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/20Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/206Insulating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C2222/00Aspects relating to chemical surface treatment of metallic material by reaction of the surface with a reactive medium
    • C23C2222/20Use of solutions containing silanes

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Electrochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Laminated Bodies (AREA)

Abstract

The present invention provides: a surface-treated copper foil which achieves a balance at a high level between reflow heat resistance and transmission characteristics, while ensuring sufficient adhesion to an insulating substrate; and the like. A surface-treated copper foil according to the present invention is obtained by providing a surface roughening layer (120) on a copper foil base (110), and is characterized in that: the surface roughening layer (120) has a recessed and projected surface that is formed of roughening particles; in a cross-section that is perpendicular to the copper foil base surface, the ratio of the creepage distance (Da) measured along the recessed and projected surface of the surface roughening layer (120) relative to the creepage distance (Db) measured along the copper foil base surface, namely Da/Db is within the range of 1.05-4.00; the average height difference H between recesses and projections in the recessed and projected surface is within the range of 0.2-1.3 [mu]m; and a silane coupling agent layer having a silane coating amount of 0.0003-0.0300 mg/dm2 is formed on the surface roughening layer (120) directly or with an intermediate layer being interposed therebetween.

Description

表面處理銅箔及使用其製成的覆銅積層板Surface-treated copper foil and copper-clad laminated board using the same

本發明關於一種表面處理銅箔及使用其製成的覆銅積層板,該表面處理銅箔可確保與絕緣基板充分的密接性且兼具高度的回焊耐熱性與傳輸特性。The invention relates to a surface-treated copper foil and a copper-clad laminated board made using the same. The surface-treated copper foil can ensure sufficient adhesion to an insulating substrate and has both high reflow heat resistance and transmission characteristics.

近年來,伴隨著電腦和資訊通訊設備的高性能化及高機能化以及網路化的發展,存在訊號日益高頻化以對大容量的資訊進行高速傳輸處理的傾向。此種資訊通訊設備使用了覆銅積層板。覆銅積層板是藉由對絕緣基板(樹脂基板)與銅箔進行加熱並加壓來製作。一般而言,絕緣基板,其構成支援高頻的覆銅積層板,必需使用介電特性優異的樹脂,然而相對介電常數和介電損耗正切低的樹脂存在以下傾向:有助於與銅箔黏著之極性高的官能基少而使與銅箔黏著的特性下降。In recent years, with the development of high performance and high performance of computers and information communication equipment, and the development of networking, there is a tendency for signals to become increasingly high-frequency to perform high-speed transmission and processing of large-capacity information. This type of information communication equipment uses copper-clad laminates. The copper-clad laminated board is produced by heating and pressing an insulating substrate (resin substrate) and a copper foil. Generally, insulating substrates that constitute copper-clad laminated boards that support high frequencies must use resins with excellent dielectric properties. However, resins with low relative permittivity and dielectric loss tangent tend to: There are few functional groups with high polarity and low adhesion to copper foil.

又,對作為支援高頻的覆銅積層板所使用的導電層之銅箔,人們期望盡可能減小其表面粗糙度。要求此種銅箔的低輪廓(low profile)化的原因在於,伴隨著高頻化,電流會集中流動於銅箔的表面部分,從而存在銅箔的表面粗糙度越大傳輸損耗越大之傾向。 為了改善構成覆銅積層板的銅箔對絕緣基板之密接性,一般於銅箔基體上形成具有微細的凹凸表面(以下簡稱為凹凸表面)之表面粗化層,該凹凸表面是利用粗化粒子的電沈積來形成,從而藉由物理效應(錨固效應)來提高密接力。若增大凹凸表面的高低差(表面粗糙度)則密接力會提高,但傳輸損耗會由於前述原因而增加。儘管如此,於現狀中仍優先使銅箔基體上形成的表面粗化層的表面為凹凸表面以確保密接力,並容許因形成凹凸表面而導致的一定程度的傳輸損耗的加劇。然而,最近正在進行支援頻率為20 GHz以上的下一代高頻電路基板的開發,從而期望該基板相較於先前能更進一步降低傳輸損耗。In addition, it is desirable to reduce the surface roughness of copper foil as a conductive layer used for a copper-clad laminated board that supports high frequencies. The reason why such a low profile of a copper foil is required is that with high frequency, a current flows intensively on the surface portion of the copper foil, so that the larger the surface roughness of the copper foil, the larger the transmission loss. . In order to improve the adhesion of the copper foil constituting the copper-clad laminated board to the insulating substrate, a surface roughening layer having a fine uneven surface (hereinafter referred to as an uneven surface) is generally formed on the copper foil substrate. The uneven surface is made of roughened particles. Is formed by electrodeposition to improve adhesion by physical effect (anchoring effect). If the height difference (surface roughness) of the uneven surface is increased, the adhesion force is increased, but the transmission loss is increased due to the aforementioned reasons. In spite of this, in the current situation, it is preferred to make the surface of the surface roughened layer formed on the copper foil substrate a concavo-convex surface to ensure adhesion and allow a certain degree of increase in transmission loss due to the formation of the concavo-convex surface. However, development of a next-generation high-frequency circuit substrate supporting frequencies above 20 GHz is currently underway, and it is expected that the substrate will further reduce transmission loss compared to the previous one.

一般而言,為了降低傳輸損耗,較佳為使用例如減小表面粗化層的表面凹凸的高低差(表面粗糙度)後的表面處理銅箔、或未進行表面粗化處理之未粗化平滑銅箔。又,為了確保此種表面粗糙度小的銅箔的密接性,較佳為於銅箔與絕緣基板之間形成矽烷耦合劑層,該耦合劑層形成化學鍵結。In general, in order to reduce transmission loss, it is preferable to use, for example, a surface-treated copper foil after reducing the step (surface roughness) of the surface roughness of the surface-roughened layer, or an unroughened smooth without surface roughening. Copper foil. In order to ensure the adhesion of the copper foil having such a small surface roughness, it is preferable to form a silane coupling agent layer between the copper foil and the insulating substrate, and the coupling agent layer forms a chemical bond.

於使用前述銅箔來製造高頻電路基板時,除上述密接性和傳輸特性以外,最近已需要進一步考慮回焊耐熱性。此處,所謂「回焊耐熱性」是在製造高頻電路基板時所進行之焊料回焊步驟中的耐熱性。所謂焊料回焊步驟是在使糊狀焊料附著於電路基板的配線與電子零件的接點的狀態下,藉由回焊爐進行加熱而塗敷焊料之方法。近年來,就減輕環境負荷之觀點而言,用於電路基板的電接合部之焊料正在向無鉛(Pb)化發展。與先前的焊料相比,無鉛焊料的熔點較高,且於應用於焊料回焊步驟的情形時,電路基板會暴露於例如260℃左右的高溫,因此與使用先前的焊料的情形相比,必需具備高度的回焊耐熱性。因此,尤其是針對用於此種用途之銅箔,使其確保與絕緣基板充分的密接性且兼具高度的回焊耐熱性與傳輸特性已成為新課題。When manufacturing the high-frequency circuit board using the above-mentioned copper foil, in addition to the above-mentioned adhesion and transmission characteristics, it has recently been necessary to further consider reflow heat resistance. Here, the "reflow heat resistance" refers to heat resistance in a solder reflow step performed when a high-frequency circuit board is manufactured. The solder reflow step is a method of applying solder by heating the reflow furnace while the paste solder is attached to the contact points of the circuit board wiring and electronic components. In recent years, from the viewpoint of reducing the environmental load, solders used for electrical joints of circuit boards are being made lead-free (Pb). Compared with the previous solder, the lead-free solder has a higher melting point, and when applied to the solder reflow step, the circuit board is exposed to a high temperature, for example, about 260 ° C. Therefore, it is necessary to compare with the previous solder. With high reflow heat resistance. Therefore, in particular, for copper foils used in such applications, it has become a new subject to ensure sufficient adhesion to insulating substrates and to have both high reflow heat resistance and transmission characteristics.

本申請人於例如專利文獻1中提出了一種方法,其使用氫氧化鉀溶液於熱塑性樹脂膜表面形成微細的凹凸,之後依序進行無電鍍銅與電鍍銅而形成具有微細的凹凸之銅層,該微細的凹凸起因於熱塑性樹脂膜的表面形狀,藉此來製作作為傳輸特性與密接性優異的電路基板也就是覆蓋有金屬之積層體。然而,本申請人之後進一步反復研究專利文獻1中記載之發明,結果得知:有時無法充分地獲得回焊耐熱性,因而有待改善。The applicant proposed, for example, Patent Document 1, a method of forming a fine unevenness on the surface of a thermoplastic resin film using a potassium hydroxide solution, and then sequentially performing electroless copper plating and electrolytic copper plating to form a copper layer having fine unevenness. The fine unevenness is caused by the surface shape of the thermoplastic resin film, thereby producing a circuit board that is excellent in transmission characteristics and adhesion, that is, a laminated body covered with metal. However, the applicant further studied the invention described in Patent Document 1 later, and as a result, it was found that the reflow heat resistance may not be sufficiently obtained in some cases, and thus needs to be improved.

又,本申請人亦於專利文獻2中提出了一種表面處理銅箔,其於電解銅箔的至少一面具有由粗化粒子所形成的突起物的高度為1至5 µm之粗化處理面。專利文獻2中記載之表面處理銅箔,其突起物的高度較高,而且並未打算改善回焊耐熱性,矽烷耦合層是根據需要而形成,所以雖然對液晶聚合物膜具有優異的密接性,但由於是藉由使粗化粒子附著而使表面粗糙度增加,因此會有傳輸損耗會增大之傾向,從而應用於近年來支援20 GHz以上的高頻的絕緣基板時有所不足,而且有時亦無法充分獲得回焊耐熱性,因而有待改善。In addition, the present applicant also proposed in Patent Document 2 a surface-treated copper foil having a roughened surface having a height of 1 to 5 µm of protrusions formed by roughened particles on at least one side of the electrolytic copper foil. The surface-treated copper foil described in Patent Document 2 has a high height of protrusions and is not intended to improve reflow heat resistance. The silane coupling layer is formed as needed, so it has excellent adhesion to the liquid crystal polymer film. However, since the surface roughness is increased by attaching the roughened particles, there is a tendency that the transmission loss will increase. Therefore, it is inadequate when applied to insulating substrates that support high frequencies above 20 GHz in recent years. In some cases, the reflow heat resistance cannot be fully obtained, and thus needs to be improved.

而且,於專利文獻3中揭示了一種覆銅積層板用表面處理銅箔,其藉由採用銅-鈷-鎳合金鍍覆之粗化處理來形成粗化粒子。於此種銅箔應用於高頻用電路基板的情形時,銅箔與樹脂的接觸面積增加,故能確保良好之密接性,但是銅箔的表面積變得過大,因此預見傳輸特性會變差,此外絲毫未考慮回焊耐熱性。Furthermore, Patent Document 3 discloses a surface-treated copper foil for a copper-clad laminated board, which is formed by roughening treatment using a copper-cobalt-nickel alloy plating. When such a copper foil is used in a high-frequency circuit board, the contact area between the copper foil and the resin is increased, so good adhesion can be ensured, but the surface area of the copper foil becomes too large, so the transmission characteristics are expected to deteriorate. In addition, no consideration was given to reflow heat resistance.

於專利文獻4中揭示了一種銅箔,其藉由銅的粗化處理來提高傳輸特性、密接性及耐熱性。於使用此種銅箔的情形時能期待傳輸特性的提高,但於回焊試驗中的260℃左右的加熱條件下,於銅箔與絕緣基板(樹脂基板)之間會發生脫層剝離,從而無法發揮出令人滿意的特性。 於專利文獻5中,針對帶有極薄底料樹脂層之表面處理銅箔,為了提高樹脂與銅箔的密接性而實施矽烷處理,從而實現常態下的密接性的改善。然而,於實施此種矽烷處理的情形時,一般會存在矽烷的均勻處理不充分的傾向而對耐熱回焊性產生不良影響。Patent Document 4 discloses a copper foil that improves the transmission characteristics, adhesion, and heat resistance by roughening copper. When such a copper foil is used, improvement in transmission characteristics can be expected. However, under heating conditions of about 260 ° C. in the reflow test, delamination and peeling occur between the copper foil and the insulating substrate (resin substrate). Unable to exhibit satisfactory characteristics. In Patent Document 5, a surface-treated copper foil with an extremely thin primer resin layer is subjected to a silane treatment in order to improve the adhesion between the resin and the copper foil, thereby improving the adhesion under normal conditions. However, when such a silane treatment is performed, there is a tendency that the uniform treatment of the silane is insufficient, which adversely affects the heat reflow resistance.

於專利文獻6中揭示了一種電磁波遮蔽用銅箔,其於銅箔的一面設置由微細粗化粒子構成之黑色或褐色處理層。作為形成微細粗化粒子之實施例,例如藉由添加有檸檬酸三鈉這類的螯合劑之鍍覆浴來實施電解。於將本實施例的銅箔用於高頻基板的情形時,雖然密接性等優異,但由於表面的微細凹凸的影響而使傳輸損耗降低,進而導致所需特性不充分。Patent Document 6 discloses a copper foil for shielding electromagnetic waves, in which a black or brown treated layer composed of fine roughened particles is provided on one side of the copper foil. As an example of forming fine coarse particles, for example, electrolysis is performed in a plating bath to which a chelating agent such as trisodium citrate is added. When the copper foil of this embodiment is used for a high-frequency substrate, although the adhesiveness and the like are excellent, the transmission loss is reduced due to the influence of the fine unevenness on the surface, and further the required characteristics are insufficient.

於專利文獻7中揭示了一種銅箔,其是藉由向銅箔的至少一面施加銅的微細粗化粒子處理層而成。於實施例中,藉由向粗化鍍覆浴添加作為螯合劑之二伸乙基三胺五乙酸五鈉而使粗化粒子變得微細。然而,於將本實施例的銅箔用於高頻基板的情形時,會由於表面的微細凹凸的影響而使傳輸損耗降低,進而導致所需特性不充分。Patent Document 7 discloses a copper foil obtained by applying a finely roughened particle-treated layer of copper to at least one side of the copper foil. In the examples, coarse particles were made finer by adding disodium triethylenetriamine pentaacetate as a chelating agent to the rough plating bath. However, when the copper foil of this embodiment is used for a high-frequency substrate, the transmission loss is reduced due to the influence of the fine unevenness on the surface, and further, the required characteristics are insufficient.

[先前技術文獻] (專利文獻) 專利文獻1:日本專利特開2013-158935號公報 專利文獻2:日本專利第4833556號公報 專利文獻3:日本專利特開2013-147688號公報 專利文獻4:國際公開2011/090175號小冊子 專利文獻5:國際公開2006/134868號小冊子 專利文獻6:日本專利特開2006-278881號公報 專利文獻7:日本專利特開2007-332418號公報[Prior Art Literature] (Patent Literature) Patent Literature 1: Japanese Patent Laid-Open No. 2013-158935 Patent Literature 2: Japanese Patent Laid-Open No. 4833556 Patent Literature 3: Japanese Patent Laid-Open No. 2013-147688 Patent Literature 4: International Patent Publication No. 2011/090175 Patent Literature 5: International Publication No. 2006/134868 Patent Literature 6: Japanese Patent Laid-Open No. 2006-278881 Patent Literature 7: Japanese Patent Laid-Open No. 2007-332418

[發明所欲解決之問題] 本發明應對為了高速傳輸處理大容量資訊而高頻化之資訊通訊設備的高性能化及高機能化,其目的在於提供一種表面處理銅箔及使用其製成的覆銅積層板,該表面處理銅箔可確保與絕緣基板充分的密接性且兼具高度的回焊耐熱性與傳輸特性,該絕緣基板的相對介電常數和介電損耗正切低,從而介電特性優異。[Problems to be Solved by the Invention] The present invention addresses the high performance and high performance of information communication equipment that has been made high-frequency for high-speed transmission and processing of large-capacity information. The object of the present invention is to provide a surface-treated copper foil and the use of Copper-clad laminated board, the surface-treated copper foil can ensure sufficient adhesion to the insulating substrate, and has high reflow heat resistance and transmission characteristics. The relative dielectric constant and dielectric loss tangent of the insulating substrate are low, so that the dielectric Excellent characteristics.

[解決問題之技術手段] 本發明人反復努力研究,結果發現:於與銅箔基體面正交之剖面,沿前述表面粗化層的凹凸表面而測定的沿面長度Da相對於沿前述銅箔基體面而測定的沿面長度Db之比Da/Db(以下亦稱為「線長比」),對回焊耐熱性影響很大。又,本發明人亦發現:於利用粗化粒子的電沈積而於銅箔基體上形成具有凹凸表面之表面粗化層的表面粗化處理時,藉由控制凹凸表面中的凹凸的平均高低差H與直接地或間隔中間層地形成於表面粗化層上之矽烷耦合劑層的矽烷附著量,能夠獲得一種於回焊耐熱性、密接性及傳輸特性方面均顯示出優異的特性的銅箔,從而完成本發明。[Technical means to solve the problem] The present inventors made repeated efforts, and found that the cross-section length Da measured along the uneven surface of the surface roughening layer in a cross section orthogonal to the surface of the copper foil substrate is larger than that along the copper foil substrate. The ratio Da / Db (hereinafter also referred to as the "line length ratio") of the length Db measured decently has a great influence on the reflow heat resistance. In addition, the present inventors have also found that in the surface roughening treatment of forming a surface roughening layer having a concave-convex surface on a copper foil substrate by electrodeposition of roughened particles, the average height difference of the unevenness on the uneven surface is controlled. The amount of silane adhesion between H and the silane coupling agent layer formed on the surface roughening layer directly or at an intermediate layer can obtain a copper foil that exhibits excellent properties in terms of reflow heat resistance, adhesion and transmission characteristics. To complete the present invention.

即,本發明之主旨構成如下。 (1)一種表面處理銅箔,其是在銅箔基體上設置表面粗化層而成者,其特徵在於:該表面粗化層是藉由粗化粒子而形成有凹凸表面者,於與該銅箔基體面正交之剖面,沿前述表面粗化層的凹凸表面而測定的沿面長度(Da)相對於沿前述銅箔基體面而測定的沿面長度(Db)之比(Da/Db)處於1.05至4.00的範圍,前述凹凸表面中的凹凸的平均高低差(H)處於0.2至1.3 µm的範圍,進一步,於前述表面粗化層上直接地或間隔中間層地具有以0.0003至0.0300 mg/dm2 的矽烷附著量而形成之矽烷耦合劑層。That is, the gist of the present invention is structured as follows. (1) A surface-treated copper foil obtained by providing a surface roughened layer on a copper foil substrate, characterized in that the surface roughened layer is formed by roughening particles to form an uneven surface. In the cross section of the copper foil base surface orthogonal, the ratio (Da / Db) of the creeping length (Da) measured along the uneven surface of the surface roughening layer to the creeping length (Db) measured along the copper foil base surface is at In the range of 1.05 to 4.00, the average height difference (H) of the unevenness in the uneven surface is in the range of 0.2 to 1.3 µm. Furthermore, the roughened surface has a thickness of 0.0003 to 0.0300 mg / Silane coupling agent layer formed by dm 2 silane adhesion amount.

(2) 如上述表面處理銅箔,其中,前述凹凸表面具有頸縮形狀。 (3) 如上述表面處理銅箔,其中,前述沿面長度之比(Da/Db)處於1.05至3.20的範圍,前述凹凸的平均高低差(H)處於0.2至0.8 µm的範圍,並且當將銅箔與絕緣基板積層時,於前述銅箔基體上的垂直於前述銅箔的製造方向的方向也就是寬度方向的2.54 µm的線上,前述表面粗化層與絕緣基板的界面的氣泡數量為2個以下。再者,所謂銅箔的製造方向,於電解銅箔的情形時是指輥的長度方向,而於壓延銅箔的情形時是指壓延方向(輥軋方向)。(2) The surface-treated copper foil as described above, wherein the uneven surface has a necked shape. (3) The surface-treated copper foil as described above, wherein the ratio of the creeping length (Da / Db) is in a range of 1.05 to 3.20, and the average height difference (H) of the unevenness is in a range of 0.2 to 0.8 µm. When the foil and the insulating substrate are laminated, the number of bubbles on the interface between the surface roughened layer and the insulating substrate is 2.5 lines on the copper foil substrate, which is perpendicular to the manufacturing direction of the copper foil, that is, the width direction of 2.54 µm. the following. The production direction of the copper foil refers to the length direction of the roll in the case of electrolytic copper foil, and refers to the rolling direction (rolling direction) in the case of rolling the copper foil.

(4) 如上述表面處理銅箔,其中,前述沿面長度之比(Da/Db)處於1.05至1.60的範圍,前述凹凸的平均高低差(H)處於0.2至0.3 µm的範圍,且於前述銅箔基體的寬度方向的2.54 µm的線上,前述表面粗化層與絕緣基板的界面的氣泡數量為1個以下。 (5) 如上述表面處理銅箔,其中,前述矽烷耦合劑層的矽烷附著量為0.0005至0.0120 mg/dm2(4) The surface-treated copper foil as described above, wherein the ratio of the length along the surface (Da / Db) is in a range of 1.05 to 1.60, and the average height difference (H) of the unevenness is in a range of 0.2 to 0.3 µm, and On the line of 2.54 µm in the width direction of the foil substrate, the number of bubbles at the interface between the surface roughened layer and the insulating substrate is 1 or less. (5) The surface-treated copper foil as described above, wherein the silane adhesion amount of the silane coupling agent layer is 0.0005 to 0.0120 mg / dm 2 .

(6) 如上述表面處理銅箔,其中,前述中間層是由選自含有Ni之基底層、含有Zn之耐熱處理層及含有Cr之防銹處理層中的至少1層構成。 (7) 如上述表面處理銅箔,其中,前述矽烷耦合劑層是由選自環氧系矽烷、胺基系矽烷、乙烯基系矽烷、甲基丙烯酸系矽烷、丙烯酸系矽烷、苯乙烯基系矽烷、醯脲系矽烷、巰基系矽烷、硫化物系矽烷及異氰酸酯基系矽烷中的至少1種構成。 (8) 一種覆銅積層板,其使用上述表面處理銅箔製造而成,且於該表面處理銅箔的表面粗化層側的面具有絕緣基板。(6) The surface-treated copper foil as described above, wherein the intermediate layer is composed of at least one layer selected from a base layer containing Ni, a heat-resistant treatment layer containing Zn, and a rust-resistant treatment layer containing Cr. (7) The surface-treated copper foil as described above, wherein the silane coupling agent layer is selected from the group consisting of epoxy-based silane, amine-based silane, vinyl-based silane, methacrylic-based silane, acrylic-based silane, and styrene-based At least one kind of silane, sulfonylurea-based silane, mercapto-based silane, sulfide-based silane, and isocyanate-based silane. (8) A copper-clad laminated board manufactured by using the above-mentioned surface-treated copper foil, and having an insulating substrate on a surface of the surface-roughened layer side of the surface-treated copper foil.

(9) 一種覆銅積層板,其是在表面處理銅箔的表面粗化層側具有絕緣基板者,該表面處理銅箔是在銅箔基體上設置前述表面粗化層而成,該覆銅積層板的特徵在於:於與該銅箔基體面正交之剖面,沿前述表面粗化層與前述絕緣基板的界面而測定的界面長度(Da')相對於沿前述銅箔基體面而測定的沿面長度(Db)之比(Da'/Db)處於1.05至4.00的範圍,前述界面中的凹凸的平均高低差(H')處於0.2至1.3 µm的範圍,進一步,於前述表面粗化層與前述絕緣基板之間,直接地或間隔中間層地具有0.0003至0.0300 mg/dm2 的矽烷附著量之矽烷耦合劑層。 (10) 如上述覆銅積層板,其中,於前述銅箔基體的寬度方向的2.54 µm的線上,表面粗化層與絕緣基板的界面的氣泡數量為2個以下。(9) A copper-clad laminated board having an insulating substrate on the surface roughened layer side of a surface-treated copper foil, the surface-treated copper foil is formed by providing the aforementioned surface roughened layer on a copper foil substrate, and the copper-clad The laminated board is characterized in that the interface length (Da ') measured along the interface between the surface roughened layer and the insulating substrate in a cross section orthogonal to the copper foil base surface is measured relative to the copper foil base surface. The ratio (Da '/ Db) of the creeping length (Db) is in the range of 1.05 to 4.00, and the average height difference (H') of the unevenness in the aforementioned interface is in the range of 0.2 to 1.3 µm. Further, the aforementioned roughened layer and A silane coupling agent layer having a silane adhesion amount of 0.0003 to 0.0300 mg / dm 2 directly or spaced between the insulating substrates. (10) The copper-clad laminated board as described above, wherein the number of bubbles at the interface between the surface roughened layer and the insulating substrate is 2 or less on a line of 2.54 µm in the width direction of the copper foil substrate.

(發明效果) 藉由本發明,能提供一種表面處理銅箔,其可確保與絕緣基板充分的密接性且兼具高度的回焊耐熱性與傳輸特性,該絕緣基板因相對介電常數和介電損耗正切低而介電特性優異,從而能應對高速傳輸處理大容量資訊之高頻化資訊通訊設備的高性能化和高機能化。又,本發明能提供一種使用該表面處理銅箔製成的覆銅積層板。(Effects of the Invention) According to the present invention, it is possible to provide a surface-treated copper foil which can ensure sufficient adhesion to an insulating substrate and has high reflow heat resistance and transmission characteristics. The insulating substrate has a relative dielectric constant and a dielectric constant. The loss tangent is low and the dielectric characteristics are excellent, so that it can cope with the high-performance and high-performance information communication equipment of high-frequency transmission and processing of large-capacity information at high speed. The present invention can also provide a copper-clad laminated board made of the surface-treated copper foil.

以下,一面參照圖式一面對依據本發明之表面處理銅箔的實施方式進行說明。圖1(a)顯示於銅箔的表面形成表面粗化層時的剖面構造,該銅箔構成依據本發明的代表性的表面處理銅箔。 本發明的表面處理銅箔,主要是由銅箔110、表面粗化層120及矽烷耦合劑層(未圖示)所構成。即,於本發明中,將於銅箔110上形成表面粗化層120作為表面處理並進一步形成矽烷耦合劑層(未圖示)作為表面處理而成者,稱為表面處理銅箔。Hereinafter, embodiments of the surface-treated copper foil according to the present invention will be described with reference to the drawings. Fig. 1 (a) shows a cross-sectional structure when a surface roughened layer is formed on the surface of a copper foil, which constitutes a representative surface-treated copper foil according to the present invention. The surface-treated copper foil of the present invention is mainly composed of a copper foil 110, a surface roughening layer 120, and a silane coupling agent layer (not shown). That is, in the present invention, a surface roughened layer 120 is formed on the copper foil 110 as a surface treatment, and a silane coupling agent layer (not shown) is further formed as a surface treatment, which is referred to as a surface-treated copper foil.

銅箔110可根據用途等適當地從電解銅箔、電解銅合金箔、壓延銅箔或壓延銅合金箔中選擇一種。 表面粗化層120是藉由在銅箔基體110上實施表面粗化處理而予以設置,表面形成有大致粒狀的微細凹凸。於該表面粗化處理中,藉由以超過極限電流密度之電流密度,一邊產生氫氣一邊進行銅的電沈積而成為所謂的燒焦鍍層的狀態,從而形成粒狀的電沈積物並形成微米級的微細凹凸表面。於本發明中,將此種微細的凹凸表面簡稱為凹凸表面。又,本發明中的粗化粒子是指該粒狀的電沈積物。The copper foil 110 may be appropriately selected from an electrolytic copper foil, an electrolytic copper alloy foil, a rolled copper foil, or a rolled copper alloy foil depending on the application and the like. The surface roughening layer 120 is provided by subjecting the copper foil substrate 110 to a surface roughening treatment, and the surface is formed with fine grains and fine irregularities. In this surface roughening treatment, a granular electrodeposition is formed by forming a so-called scorched coating by performing electrodeposition of copper while generating hydrogen at a current density exceeding a limit current density while generating hydrogen. Fine uneven surface. In the present invention, such a fine uneven surface is simply referred to as an uneven surface. The roughened particles in the present invention refer to the granular electrodeposited material.

而且,本發明中,於與銅箔基體面正交之剖面,使沿前述表面粗化層120的凹凸表面而測定的沿面長度Da相對於沿前述銅箔基體面而測定的沿面長度Db之(線長)比Da/Db處於1.05至4.00的範圍。線長比Da/Db可處於1.05至3.20的範圍,且線長比Da/Db亦可處於1.05至1.60的範圍。Further, in the present invention, in a cross section orthogonal to the copper foil base surface, the creepage length Da measured along the uneven surface of the surface roughening layer 120 is equal to (a) the creepage length Db measured along the copper foil base surface ( Line length) ratio Da / Db is in the range of 1.05 to 4.00. The line length ratio Da / Db may be in a range of 1.05 to 3.20, and the line length ratio Da / Db may also be in a range of 1.05 to 1.60.

若線長比Da/Db低於1.05,則回焊耐熱性會降低而無法獲得令人滿意的性能。若線長比Da/Db超過4.00,則表面的凹凸會過度地增加,所以會由於集膚效應使傳輸損耗變大而導致傳輸特性變差,因此使線長比Da/Db處於1.05至4.00的範圍。線長比Da/Db的測定方法將於下文進行說明。If the wire length ratio Da / Db is less than 1.05, the reflow resistance will be lowered and satisfactory performance will not be obtained. If the line length ratio Da / Db exceeds 4.00, the unevenness on the surface will increase excessively, so the transmission loss will be increased due to the skin effect, which will cause the transmission characteristics to deteriorate. Therefore, the line length ratio Da / Db is between 1.05 and 4.00. range. The method for measuring the line length ratio Da / Db will be described below.

本發明人努力調查線長比Da/Db會影響回焊耐熱性的原因,結果獲得如下的新見解。首先,對回焊耐熱試驗的試片的製作方法進行說明。將於雙面使銅箔積層而成之絕緣基板(基材)作為芯層。利用氯化銅(II)溶液等對芯層進行蝕刻而使所有銅箔被溶解去除。接著,於芯層經蝕刻後殘留的絕緣基板(基材)的雙面,使由絕緣材料構成之預浸料層與銅箔積層而製作回焊試片。對該回焊試片的剖面進行觀察,結果確認:於芯層的絕緣基板(基材)與預浸料層接觸的界面,複製(replica)有構成芯層之銅箔的表面形狀。並且確認:於回焊耐熱試驗中,因為樣品(試片)暴露於260℃左右的高溫下,所以絕緣基板(基材)中的低分子量的成分會揮發,揮發的氣體積存於絕緣基板與預浸料層之間的密接性較弱的區域而成為層間剝離的原因。因此,一般認為:若線長比Da/Db低於1.05,則藉由蝕刻而被複製的區域會變少,結果絕緣基板(基材)與預浸料層接觸的區域會減少,由此產生兩層間的密接性較低的區域,從而於加熱時自基材揮發的氣體會積存於層間的該區域而導致剝離變得容易發生。The present inventors worked hard to investigate the reason why the wire length ratio Da / Db affects the heat resistance of reflow soldering. As a result, they obtained the following new insights. First, a method for preparing a test piece for a reflow heat resistance test will be described. An insulating substrate (base material) formed by laminating copper foils on both sides is used as a core layer. The core layer is etched with a copper (II) chloride solution or the like to dissolve and remove all the copper foil. Next, on both sides of the insulating substrate (base material) remaining after the core layer is etched, a prepreg layer made of an insulating material and a copper foil are laminated to produce a reflow test piece. The cross-section of the reflow test piece was observed, and as a result, it was confirmed that the surface shape of the copper foil constituting the core layer was replicated at the interface where the insulating substrate (base material) of the core layer was in contact with the prepreg layer. And confirm that in the reflow heat resistance test, because the sample (test piece) is exposed to a high temperature of about 260 ° C, the low molecular weight components in the insulating substrate (base material) will volatilize, and the volatile gas volume will be stored in the insulating substrate and the Areas with weak adhesion between the dip layers are the cause of interlayer peeling. Therefore, it is generally considered that if the line length ratio Da / Db is less than 1.05, the area copied by etching will decrease, and as a result, the area where the insulating substrate (base material) contacts the prepreg layer will decrease, resulting in A region with low adhesion between the two layers, so that the gas volatilized from the substrate during heating will accumulate in this region between the layers, causing peeling to occur easily.

本發明中,經過努力研究,結果發現:藉由將線長比Da/Db及凹凸的平均高低差H控制在適當的範圍,能獲得具有頸縮形狀之粗化形狀,從而與公知例中利用表面積來進行控制之銅箔相比,耐熱性顯著地提高。即,若於本案的凹凸的平均高低差H的範圍內以不會使傳輸特性降低的程度來增加Da/Db,則粗化層的輪廓長度會變長,結果能獲得具有大量頸縮形狀之粗化形狀。藉由使頸縮形狀增多,雖然粗化微細,但表現出強錨固效應,從而銅箔與絕緣基板(樹脂基板)的密接性增強、耐熱性提高。因此於本案之申請專利範圍內,藉由控制Da/Db與平均高低差H而於維持高度的傳輸特性的狀態下,使耐熱性與公知例相比有顯著提高。In the present invention, after diligent research, it was found that by controlling the line length ratio Da / Db and the average height difference H of the unevenness to an appropriate range, a roughened shape having a necked shape can be obtained, which can be used in common examples. Compared with copper foil whose surface area is controlled, the heat resistance is significantly improved. That is, if Da / Db is increased within a range of the average height difference H of the unevenness of the present case so as not to reduce the transmission characteristics, the contour length of the roughened layer becomes longer, and as a result, a large amount of necked shape can be obtained. Roughen the shape. By increasing the necked shape, although the roughening is fine, the strong anchoring effect is exhibited, and the adhesion between the copper foil and the insulating substrate (resin substrate) is enhanced and the heat resistance is improved. Therefore, within the scope of the patent application of this case, by controlling Da / Db and the average height difference H while maintaining high transmission characteristics, the heat resistance is significantly improved compared with known examples.

作為使粗化形狀定量之參數,如專利文獻4(WO2011-090175)所示,已知有利用雷射顯微鏡測得的表面積比。然而作為問題點,例如如圖1所示,於存在(a)有頸縮形狀11的粗化與(b)無頸縮形狀的粗化的情形下,則理論上於利用雷射顯微鏡測定表面積時,因為是自銅箔的垂直方向投射雷射光而測定高度,所以難以測定圖1(a)和圖1(b)之有無頸縮形狀的差異。即,雖然能測定雷射光所直接照射的表面的形狀,但如頸縮部分,自垂直方向投射雷射光時會變成影子,從而未直接被雷射光照射的部分將不可能測定出形狀。As a parameter for quantifying the roughened shape, as shown in Patent Document 4 (WO2011-090175), a surface area ratio measured by a laser microscope is known. However, as a problem, for example, as shown in FIG. 1, when (a) roughening with a necked shape 11 and (b) roughening without a necked shape exist, theoretically, the surface area is measured by a laser microscope At this time, since the laser light was projected from the copper foil in the vertical direction to measure the height, it was difficult to measure the difference in the presence or absence of a necked shape in FIGS. 1 (a) and 1 (b). That is, although the shape of the surface directly irradiated with the laser light can be measured, if the necked portion is projected from the vertical direction, the laser light becomes a shadow, so that it is impossible to measure the shape of the portion that is not directly irradiated with the laser light.

因此,如專利文獻4的實施方式所示,利用雷射顯微鏡來測定表面積比時,無法將頸縮形狀之有無反映於測定值中,所以藉由雷射顯微鏡所測得的表面積比來控制銅箔的表面形狀對於本案而言不適合。此外專利文獻4所示的縱橫比僅表示粗化粒子的「高度」與「寬度」之比,完全沒有考慮頸縮形狀。Therefore, as shown in the embodiment of Patent Document 4, when the surface area ratio is measured using a laser microscope, the presence or absence of the necking shape cannot be reflected in the measured value. Therefore, the copper is controlled by the surface area ratio measured by the laser microscope. The surface shape of the foil is not suitable for this case. In addition, the aspect ratio shown in Patent Document 4 only indicates the ratio of the "height" to the "width" of the roughened particles, and the necking shape is not considered at all.

再者,若使絕緣基板密接於具有由上述實施方式而獲得的表面粗化層之銅箔的表面粗化層側而形成覆銅積層板,則存在沿表面粗化層與絕緣基板的界面而測定的界面長度(Da'),會由於與絕緣基板的加壓密接而稍微縮小的傾向。因此,於絕緣基板密接後亦需要使上述線長比維持在上述範圍,並且,於絕緣基板密接後的與該銅箔基體面正交之剖面上,藉由使沿前述表面粗化層與前述絕緣基板的界面而測定的界面長度(Da')相對於沿前述銅箔基體面而測定的沿面長度(Db)之比(Da'/Db)處於1.05至4.00的範圍,能獲得與上述(Da/Db)的情形同樣的效果。Furthermore, if the insulating substrate is closely adhered to the surface roughened layer side of the copper foil having the surface roughened layer obtained in the above embodiment to form a copper-clad laminated board, there is an interface along the surface roughened layer and the insulated substrate. The measured interface length (Da ') tends to be slightly reduced due to the pressure contact with the insulating substrate. Therefore, it is necessary to maintain the above-mentioned wire length ratio within the above-mentioned range after the insulating substrates are tightly adhered, and on a cross section orthogonal to the copper foil base surface after the insulating substrates are tightly adhered, the roughening layer along the surface and the aforementioned The ratio (Da '/ Db) of the interface length (Da') measured at the interface of the insulating substrate to the creepage length (Db) measured along the aforementioned copper foil substrate surface is in the range of 1.05 to 4.00, and can be obtained from the above (Da / Db).

因此,於本發明中,使銅箔的凹凸表面中的凹凸的平均高低差(相當於粗化粒子的平均高度)H處於0.2至1.3 µm的範圍。若凹凸表面中的凹凸的平均高低差H低於0.2 µm,則錨固效應弱,因而無法獲得銅箔與絕緣基板充分的密接性。又,若凹凸表面中的凹凸的平均高低差H超過1.3 µm,則表面凹凸會變得過大,從而傳輸損耗會由於集膚效應而變大。再者,凹凸表面中的凹凸的平均高低差H可處於0.2至0.8 µm的範圍,且凹凸表面的凹凸的平均高低差H亦可處於0.2至0.3 µm的範圍。Therefore, in the present invention, the average height difference (corresponding to the average height of the roughened particles) H of the unevenness on the uneven surface of the copper foil is set in the range of 0.2 to 1.3 µm. If the average height difference H of the unevenness on the uneven surface is less than 0.2 µm, the anchoring effect is weak, and sufficient adhesion between the copper foil and the insulating substrate cannot be obtained. If the average height difference H of the unevenness on the uneven surface exceeds 1.3 µm, the unevenness on the surface becomes too large, and the transmission loss becomes large due to the skin effect. In addition, the average height difference H of the unevenness on the uneven surface may be in a range of 0.2 to 0.8 μm, and the average height difference H of the unevenness on the uneven surface may be in a range of 0.2 to 0.3 μm.

再者,若使絕緣基板密接於具有由上述實施方式而獲得的表面粗化層之銅箔的表面粗化層側而形成覆銅積層板,則存在表面粗化層的凹凸差H會由於與絕緣基板的加壓密接而稍微減小的傾向。因此,於絕緣基板密接後亦需要使凹凸的平均高度維持在上述範圍,並且藉由在絕緣基板密接後之與該銅箔基體面正交之剖面,使凹凸表面中的凹凸的平均高低差(相當於粗化粒子的平均高度)H'處於0.2至1.3 µm的範圍,能獲得與上述H的情形同樣的效果。Furthermore, if the insulating substrate is closely adhered to the surface roughened layer side of the copper foil having the surface roughened layer obtained in the above embodiment to form a copper-clad laminated board, the unevenness H of the surface roughened layer may be The insulating substrate tends to be slightly reduced in pressure contact. Therefore, it is necessary to maintain the average height of the unevenness within the above-mentioned range after the insulating substrate is closely adhered, and to make the average height difference of the unevenness on the uneven surface by the cross section orthogonal to the copper foil base surface after the insulating substrate is tightly adhered ( This corresponds to the average height of the coarsened particles) H 'is in the range of 0.2 to 1.3 µm, and the same effect as in the case of H described above can be obtained.

本發明人針對於適當的凹凸平均高低差(H)的範圍中控制Da/Db之方法進行調查後,發現:於文獻6及文獻7的粗化方法中,因為螯合劑的濃度高,所以於銅箔表面形成大量微細的粗化粒子會使Da/Db過度增加,結果導致傳輸損耗加劇。本發明人努力研究該問題的對策,結果得知:藉由使螯合劑的濃度相較於先前為低濃度,粒子將變成適當的大小,可以將Da/Db控制在最適合的範圍,在保持高度密接性與耐熱性之同時降低傳輸損耗。具體而言,可使添加至鍍覆浴中的螯合劑的濃度處於0.1至5 g/L的範圍。The present inventors investigated a method of controlling Da / Db in a range of an appropriate uneven average height difference (H), and found that in the roughening methods of Documents 6 and 7, because the concentration of the chelating agent is high, the The formation of a large number of fine roughened particles on the surface of copper foil will increase the Da / Db excessively, and as a result, the transmission loss will increase. The present inventors worked hard to study the countermeasures to this problem, and as a result, they learned that by making the concentration of the chelating agent lower than the previous concentration, the particles will become an appropriate size, and the Da / Db can be controlled in the most suitable range. High adhesion and heat resistance while reducing transmission loss. Specifically, the concentration of the chelating agent added to the plating bath may be in a range of 0.1 to 5 g / L.

作為反應之機制,推測藉由使螯合劑為低濃度來使電解時的過電壓相較於高濃度條件有所降低,從而使成核頻率降低,因此能適當地抑制微細化效果而形成適當大小的粗化粒子。又,一般認為:於螯合劑為低濃度的情形時,因為鍍覆浴中的螯合物分子的數量少,所以處於螯合物大部分已配位之金屬離子(Cu等)與螯合物未配位之金屬離子於鍍覆浴中混在一起的狀態,由於螯合物配位狀態的差異使析出模式不同的粒子同時形成,由此成為具有頸縮形狀之複雜粒子形狀,從而於適當的Da/Db的範圍也能兼具高度的耐熱性與密接性。又,使螯合劑為低濃度時,則粗化粒子的高度方向上的成長會被適當地抑制,從而使凹凸的平均高低差H處於適當的範圍。根據上述的螯合物大部分已配位之金屬離子(Cu等)與螯合物未配位之金屬離子於鍍覆浴中混在一起的狀態下的析出模式,析出的配向為無規(隨機性),因此高度方向上的成長得以抑制。As a mechanism of the reaction, it is presumed that the low-concentration chelating agent reduces the overvoltage during electrolysis compared to the high-concentration condition, thereby reducing the nucleation frequency. Therefore, it is possible to appropriately suppress the effect of miniaturization and form an appropriate size. Roughened particles. In addition, it is generally considered that when the chelating agent has a low concentration, since the number of chelate molecules in the plating bath is small, most of the chelates are coordinated metal ions (such as Cu) and the chelate. The state of uncoordinated metal ions mixed together in the plating bath. Due to the difference in the coordination state of the chelate, particles with different precipitation modes are formed at the same time, thereby becoming a complex particle shape with a necked shape, which is suitable for the appropriate The range of Da / Db can also have a high degree of heat resistance and adhesion. When the chelating agent is used at a low concentration, growth in the height direction of the roughened particles is appropriately suppressed, so that the average height difference H of the unevenness is in a proper range. According to the precipitation mode in the state where most of the chelate complexed metal ions (such as Cu) and chelate uncoordinated metal ions are mixed together in the plating bath, the precipitated orientation is random (random Properties), so growth in the height direction is suppressed.

又,本發明人發現:作為適當控制Da/Db之方法,向表面粗化處理浴添加兩種螯合劑之方法亦有效果。據推測:藉由添加兩種螯合劑,螯合物的配位狀態不同之金屬同時被電解,形狀不同的粒子同時析出,由此粗化粒子形狀變得複雜,從而容易表現出錨固效果。 作為其他對Da/Db進行適當管理之方法,利用先前由於粉末掉落等不良狀況而未使用之70至90 A/dm2 的電流密度來形成粗化粒子亦有效果。但若處理時間長則粒子會沿垂直方向過度成長而變得容易掉落粉末,因此必需使處理時間短。若為高電流密度,則陰極上的氫氣生成量會增加。據推測:氫氣自陰極脫離而進入液中之前為無法鍍覆的斑點,因此粗化的析出時點會變得不連續,結果可獲得凹凸數量適當的表面形狀。In addition, the inventors have found that, as a method of appropriately controlling Da / Db, a method of adding two kinds of chelating agents to the surface roughening treatment bath is also effective. It is speculated that by adding two kinds of chelating agents, metals with different coordination states of the chelate are electrolyzed at the same time, and particles of different shapes are simultaneously precipitated, thereby coarsening the shape of the particles to become complicated, thereby easily showing an anchoring effect. As another method for proper management of Da / Db, it is also effective to form a roughened particle using a current density of 70 to 90 A / dm 2 which was previously unused due to unfavorable conditions such as powder dropping. However, if the processing time is long, the particles will grow excessively in the vertical direction and it becomes easy to drop the powder. Therefore, it is necessary to shorten the processing time. If the current density is high, the amount of hydrogen generated on the cathode increases. It is presumed that before the hydrogen gas detached from the cathode and entered the liquid, it was a spot that could not be plated. Therefore, the roughened precipitation point becomes discontinuous, and as a result, a surface shape with an appropriate number of irregularities can be obtained.

於本發明中,進一步於表面粗化層120上直接地或間隔中間層地具有以0.0003至0.0300 mg/dm2 的矽烷附著量而形成之矽烷耦合劑層。若構成矽烷耦合劑層之矽烷耦合劑的矽烷附著量低於0.0003 mg/dm2 ,則回焊耐熱性會降低。又,若上述附著量超過0.0300 mg/dm2 ,則矽烷耦合劑層會變得過厚,反而會使密接強度降低。再者,構成矽烷耦合劑層之矽烷耦合劑的矽烷附著量亦可為0.0005至0.0120 mg/dm2In the present invention, a silane coupling agent layer is formed on the surface roughened layer 120 directly or at an intermediate layer with a silane adhesion amount of 0.0003 to 0.0300 mg / dm 2 . If the silane coupling amount of the silane coupling agent constituting the silane coupling agent layer is less than 0.0003 mg / dm 2 , the reflow heat resistance will decrease. In addition, if the adhesion amount exceeds 0.0300 mg / dm 2 , the silane coupling agent layer becomes too thick, and the adhesion strength is reduced. Furthermore, the silane coupling amount of the silane coupling agent constituting the silane coupling agent layer may be 0.0005 to 0.0120 mg / dm 2 .

再者,作為矽烷耦合劑層的形成方法,例如可列舉以下方法:於表面粗化層120的凹凸表面上直接地或間隔中間層而間接地塗布矽烷耦合劑溶液,之後經風乾或加熱乾燥而形成。關於塗布而成之耦合劑層的乾燥,只要水分蒸發就能充分發揮本發明的效果,但從促進矽烷耦合劑與銅箔的反應的觀點出發,較佳為於50至180℃的溫度下進行加熱乾燥。Further, as a method for forming the silane coupling agent layer, for example, the following method may be mentioned: a silane coupling agent solution is directly applied on the uneven surface of the surface roughening layer 120 or indirectly through an intermediate layer, and then air-dried or heated to dry. form. Regarding the drying of the coated coupling agent layer, the effect of the present invention can be fully exerted as long as the water evaporates, but from the viewpoint of promoting the reaction between the silane coupling agent and the copper foil, it is preferably performed at a temperature of 50 to 180 ° C. Heat and dry.

較佳為矽烷耦合劑層含有環氧系矽烷、胺基系矽烷、乙烯基系矽烷、甲基丙烯酸系矽烷、丙烯酸系矽烷、苯乙烯基系矽烷、醯脲系矽烷、巰基系矽烷、硫化物系矽烷及異氰酸酯基系矽烷中的任一種以上。 較佳為本發明的凹凸表面具有大量頸縮形狀。雖然具有大量頸縮形狀會造成粗化微細,但能表現出強錨固效果而使銅箔與絕緣基板的密接性增強、耐熱性提高。要形成具有大量頸縮形狀的凹凸表面,如上所述,藉由使凹凸的平均高低差H處於0.2至1.3 µm的範圍內並將Da/Db控制在1.4至4.0的範圍內,能使粗化層的輪廓長度變長,結果獲得具有大量頸縮形狀之粗化形狀。It is preferred that the silane coupling agent layer contains epoxy-based silane, amine-based silane, vinyl-based silane, methacrylic-based silane, acrylic-based silane, styryl-based silane, ureton-based silane, mercapto-based silane, and sulfide Any one or more of the silanes and isocyanate-based silanes. It is preferable that the uneven surface of the present invention has a large number of necked shapes. Although having a large number of necked shapes causes coarsening and fineness, it can exhibit a strong anchoring effect and enhance the adhesion and heat resistance of the copper foil to the insulating substrate. To form a concave-convex surface having a large number of necked shapes, as described above, roughening can be performed by keeping the average height difference H of the unevenness in a range of 0.2 to 1.3 µm and controlling Da / Db in a range of 1.4 to 4.0. The contour length of the layer becomes longer, and as a result, a roughened shape having a large number of necked shapes is obtained.

又,於本發明中,較佳為於使銅箔與絕緣基板積層時,前述表面粗化層與絕緣基板的界面的氣泡數量,於基板的寬度(例如2.54 µm)上為2個以下。本案中,於調查影響回焊耐熱性的因素的過程中發現:除上述線長比Da/Db及平均高低差H以外,回焊試片中的銅箔的表面粗化層與絕緣基板的界面的氣泡數量亦有很大影響。此處,所謂本案中的氣泡,是指於表面粗化層與絕緣基板的界面中,未填充絕緣基板之區域,其大小以長徑計為1.0 µm以下。若銅箔的表面粗化層與絕緣基板的界面的氣泡數量多,則於回焊試驗中的加熱時,自上述絕緣基板中揮發的氣體會集中於氣泡部而使氣泡內的氣體壓力變高,導致層間剝離變得容易發生。In the present invention, when the copper foil and the insulating substrate are laminated, the number of bubbles at the interface between the surface roughening layer and the insulating substrate is preferably 2 or less in the width of the substrate (for example, 2.54 µm). In this case, in investigating the factors affecting the heat resistance of reflow soldering, it was found that in addition to the above-mentioned wire length ratio Da / Db and the average height difference H, the interface between the roughened surface of the copper foil and the insulating substrate in the reflow solder test strip The number of bubbles also has a large effect. Here, the term "bubble" in the present case refers to a region where the insulating substrate is not filled at the interface between the surface roughened layer and the insulating substrate, and the size thereof is 1.0 µm or less in terms of major diameter. If the number of bubbles at the interface between the surface roughened layer of the copper foil and the insulating substrate is large, during heating in the reflow test, the gas volatilized from the insulating substrate will be concentrated in the bubble portion and the gas pressure in the bubble will increase. , Causing interlayer peeling to easily occur.

因此,本發明人努力調查減少表面粗化層與基板的界面的氣泡數量之方法,結果得知:適當控制矽烷耦合劑的處理條件是有效方法。具體而言,是首先向矽烷耦合劑水溶液添加醇之方法。作為醇,可列舉甲醇、乙醇、異丙醇、正丙醇等。藉由添加醇,溶液中的矽烷分子的分散性變好,於銅箔的表面粗化層可均勻地處理矽烷耦合劑,因此對於樹脂的浸潤性得以提高。而且據推測:於高溫下壓合基板與銅箔時,熔融樹脂會充分浸潤表面粗化層而使填充性變得良好,從而使表面粗化層與基板的界面的氣泡數量減少。又,使從利用矽烷水溶液處理銅箔之後至利用暖風進行乾燥為止的時間延長亦具有效果。據推測:使從利用矽烷水溶液進行處理之後直至利用暖風進行乾燥為止的時間延長,可使矽烷分子於銅箔的表面粗化層表面有規則地進行配向而提高對於樹脂的浸潤性,結果使表面粗化層與絕緣基板的界面的氣泡數量減少。例如,於專利文獻4所介紹之矽烷處理的情形時,未考慮樹脂對表面粗化層的浸潤性,從而導致表面粗化層與絕緣基板的界面的氣泡數量容易增加。Therefore, the present inventors have worked hard to investigate a method for reducing the number of bubbles at the interface between the surface roughened layer and the substrate, and as a result, it has been found that appropriately controlling the processing conditions of the silane coupling agent is an effective method. Specifically, it is a method of first adding alcohol to an aqueous solution of a silane coupling agent. Examples of the alcohol include methanol, ethanol, isopropanol, and n-propanol. By adding alcohol, the dispersibility of the silane molecules in the solution is improved, and the silane coupling agent can be treated uniformly on the surface roughened layer of the copper foil, so the wettability to the resin is improved. Furthermore, it is estimated that when the substrate and the copper foil are laminated at a high temperature, the molten resin sufficiently wets the surface roughened layer to improve the filling property, thereby reducing the number of bubbles at the interface between the surface roughened layer and the substrate. Further, it is also effective to extend the time from the treatment of the copper foil with the silane aqueous solution to the drying with warm air. It is presumed that by extending the time from the treatment with an aqueous silane solution to the drying with warm air, the silane molecules can be regularly aligned on the surface of the surface roughened layer of the copper foil to improve the wettability of the resin. The number of bubbles at the interface between the surface roughened layer and the insulating substrate is reduced. For example, in the case of the silane treatment described in Patent Document 4, the wettability of the surface roughened layer by the resin is not taken into account, and the number of bubbles at the interface between the surface roughened layer and the insulating substrate is likely to increase.

銅箔的表面粗化層與絕緣基板的界面的氣泡數量,於基板的寬度方向的2.54 µm的線上,只要為2個以下即可。氣泡的數量於該線上亦可為1個以下或0個。若銅箔的表面粗化層與絕緣基板的界面的氣泡數量,於該線上為3個以上,則存在於回焊試驗時自絕緣基板中產生的氣體會集中於氣泡部而導致層間剝離容易發生,且回焊耐熱性(銅箔與預浸料層之間)降低的傾向。The number of bubbles at the interface between the surface roughened layer of the copper foil and the insulating substrate may be less than two on the 2.54 µm line in the width direction of the substrate. The number of bubbles may also be 1 or less on the line. If the number of bubbles at the interface between the surface roughened layer of the copper foil and the insulating substrate is 3 or more on this line, the gas generated from the insulating substrate during the reflow test will be concentrated in the bubble portion, and interlayer peeling will easily occur. , And the reflow resistance (between the copper foil and the prepreg layer) tends to decrease.

作為其他的實施方式,亦可於表面粗化層120與矽烷耦合劑層之間進一步具有選自含有Ni之基底層、含有Zn之耐熱處理層及含有Cr之防銹處理層中的至少1層中間層。 若存在例如銅箔基體110或表面粗化層120中的銅(Cu)擴散至絕緣基板側而產生銅危害並使密接性降低的情況,則較佳為於表面粗化層120與矽烷耦合劑層之間形成含有鎳(Ni)之基底層。含Ni之基底層含有鎳(Ni)、鎳(Ni)-磷(P)、鎳(Ni)-(Zn)中的至少1種以上。其中,就能抑制電路配線形成時中的銅箔蝕刻時的鎳殘留的觀點而言,較佳為鎳-磷。As another embodiment, between the surface roughening layer 120 and the silane coupling agent layer, at least one layer selected from a base layer containing Ni, a heat-resistant treatment layer containing Zn, and a rust-resistant treatment layer containing Cr may be further provided. middle layer. If, for example, copper (Cu) in the copper foil substrate 110 or the surface roughened layer 120 diffuses to the insulating substrate side to cause copper damage and reduce the adhesion, it is preferable to use the surface roughened layer 120 and the silane coupling agent. A base layer containing nickel (Ni) is formed between the layers. The Ni-containing underlayer contains at least one of nickel (Ni), nickel (Ni) -phosphorus (P), and nickel (Ni) -rhenium (Zn). Among these, nickel-phosphorus is preferable from the viewpoint of suppressing nickel residue during copper foil etching during circuit wiring formation.

較佳為於需要進一步提高耐熱性的情形時,形成含有鋅(Zn)之耐熱處理層。較佳為耐熱處理層是由例如鋅或含有鋅之合金,即選自鋅(Zn)-錫(Sn)、鋅(Zn)-鎳(Ni)、鋅(Zn)-鈷(Co)、鋅(Zn)-銅(Cu)、鋅(Zn)-鉻(Cr)及鋅(Zn)-釩(V)中的至少1種以上之含鋅合金所形成。其中,就抑制電路配線形成時的蝕刻時的底切(undercut)的觀點而言,尤佳為鋅-釩。再者,此處所言之「耐熱性」是指使絕緣基板積層於表面處理銅箔上並進行加熱而使樹脂硬化後,表面處理銅箔與絕緣基板之間的密接強度不容易降低的性質,是不同於回焊耐熱性的特性。When it is necessary to further improve heat resistance, it is preferable to form a heat-resistant treatment layer containing zinc (Zn). The heat-resistant treatment layer is preferably made of, for example, zinc or an alloy containing zinc, that is, selected from zinc (Zn) -tin (Sn), zinc (Zn) -nickel (Ni), zinc (Zn) -cobalt (Co), zinc A zinc-containing alloy of at least one of (Zn) -copper (Cu), zinc (Zn) -chromium (Cr), and zinc (Zn) -vanadium (V). Among these, zinc-vanadium is particularly preferred from the viewpoint of suppressing undercuts during etching during circuit wiring formation. In addition, the "heat resistance" mentioned here refers to a property in which an insulating substrate is laminated on a surface-treated copper foil and heated to harden the resin, so that the adhesion strength between the surface-treated copper foil and the insulating substrate is not easily reduced. Features different from reflow heat resistance.

亦可於需要進一步提高耐腐蝕性的情形時形成含有Cr之防銹處理層。作為防銹處理層,例如可列舉藉由鍍鉻而成之鉻層及藉由鉻酸鹽處理而形成之鉻酸鹽層。 上述三層即基底層、耐熱處理層及防銹處理層都要形成時,可於表面粗化層上以該順序形成,亦可根據作為用途或目的之特性而僅形成上述三層中的任一層或任兩層。When it is necessary to further improve the corrosion resistance, a rust-resistant treatment layer containing Cr may be formed. Examples of the rust-preventive treatment layer include a chromium layer formed by chromium plating and a chromate layer formed by chromate treatment. When the above three layers, that is, the base layer, the heat-resistant treatment layer, and the rust-proof treatment layer are all formed, they can be formed on the surface roughened layer in this order, or only any one of the three layers can be formed according to the characteristics of use or purpose One or any two layers.

又,較佳為本發明的表面處理銅箔用於覆銅積層板之製造。覆銅積層板於表面處理銅箔的表面粗化層側的面具有絕緣基板。 用於覆銅積層板之絕緣基板,可使用選自熱硬化性聚苯醚樹脂、含有聚苯乙烯系聚合物之熱硬化性聚苯醚樹脂、含有氰尿酸三烯丙酯之聚合物或共聚物之樹脂組合物、經甲基丙烯酸或丙烯酸改質之環氧樹脂組合物、酚類加成丁二烯聚合物、苯二甲酸二烯丙酯樹脂、二乙烯苯樹脂、多官能性甲基丙烯醯基樹脂、不飽和聚酯樹脂、聚丁二烯樹脂、苯乙烯-丁二烯、苯乙烯-丁二烯與苯乙烯-丁二烯之交聯聚合物等之絕緣樹脂。 於製造覆銅積層板的情形時,只要是藉由加熱壓合具有矽烷耦合劑層之表面處理銅箔與絕緣基板並使兩者密接來製造即可。再者,於絕緣基板上塗布矽烷耦合劑,並藉由加熱壓合使絕緣基板與於最表面具有防銹處理層之銅箔密接而製作之覆銅積層板亦具有與本發明同等的效果。Moreover, it is preferable that the surface-treated copper foil of this invention is used for manufacture of a copper clad laminated board. The copper-clad laminated board has an insulating substrate on the surface on the surface roughened layer side of the surface-treated copper foil. Insulating substrates for copper-clad laminates can be selected from thermosetting polyphenylene ether resins, thermosetting polyphenylene ether resins containing polystyrene polymers, polymers containing triallyl cyanurate, or copolymers Resin composition, epoxy resin composition modified by methacrylic acid or acrylic acid, phenol addition butadiene polymer, diallyl phthalate resin, divinylbenzene resin, polyfunctional methyl group Insulating resins such as acrylic fluorene-based resins, unsaturated polyester resins, polybutadiene resins, styrene-butadiene, crosslinked polymers of styrene-butadiene and styrene-butadiene, and the like. In the case of manufacturing a copper-clad laminated board, it may be manufactured by heat-pressing a surface-treated copper foil having a silane coupling agent layer and an insulating substrate and bringing them into close contact. Furthermore, a copper-clad laminated board produced by coating a silane coupling agent on an insulating substrate and closely bonding the insulating substrate to a copper foil having a rust-preventive treatment layer on the outermost surface by heating and pressing also has the same effect as the present invention.

〔表面處理銅箔的製作〕 (1)表面粗化層的形成步驟 藉由粗化粒子的電沈積而於銅箔上形成具有凹凸表面之表面粗化層。 較佳為:除控制線長比Da/Db以外,進一步(i)適當地控制粗化粒子的大小、及(ii)使形狀不同之粗化粒子容易同時析出。 就(i)的觀點而言,例如可採用減小電解時的過電壓以減小成核頻率之方法,作為其具體例,可列舉使螯合劑為低濃度的方法。或者亦可採用使進行粗化處理時的電流密度高達70至90 A/dm2 而縮短處理時間之方法。[Production of Surface-treated Copper Foil] (1) Step of Forming Surface Roughened Layer A surface roughened layer having an uneven surface is formed on a copper foil by electrodeposition of roughened particles. In addition to controlling the line length ratio Da / Db, it is preferable to further (i) appropriately control the size of the roughened particles, and (ii) make roughened particles having different shapes easily precipitate simultaneously. From the viewpoint of (i), for example, a method of reducing the overvoltage during electrolysis to reduce the nucleation frequency can be adopted. As a specific example, a method of making the chelating agent at a low concentration can be mentioned. Alternatively, a method of shortening the processing time by increasing the current density during roughening processing to 70 to 90 A / dm 2 may be adopted.

此處,添加至表面粗化處理的鍍覆浴中的螯合劑的濃度,處於0.1至5 g/L會較為適當。作為螯合劑,可列舉DL-蘋果酸、EDTA鈉溶液、葡萄糖酸鈉、二伸乙基三胺五乙酸五鈉(DTPA)等螯合劑等。 又,就(ii)的觀點而言,例如可採用使螯合物的配位狀態不同之金屬同時被電解之方法,作為其具體例,可列舉向表面粗化處理浴添加兩種螯合劑之方法。作為例子,有DL-蘋果酸與DTPA之組合。Here, it is appropriate that the concentration of the chelating agent added to the plating bath for surface roughening treatment is 0.1 to 5 g / L. Examples of the chelating agent include chelating agents such as DL-malic acid, sodium EDTA solution, sodium gluconate, and pentasodium diethylenetriamine pentaacetate (DTPA). From the viewpoint of (ii), for example, a method in which metals with different coordination states of chelates are simultaneously electrolyzed may be adopted. As a specific example, a method of adding two kinds of chelating agents to a surface roughening treatment bath may be mentioned. method. As an example, there is a combination of DL-malic acid and DTPA.

又,為了於銅箔基體的寬度方向的2.54 µm的線上,使表面粗化層與絕緣基板的界面中的氣泡數量為2個以下,可採用提高表面粗化層對絕緣基板表面浸潤性等方法。因此,存在例如(i)以使矽烷耦合劑層均勻地形成於表面粗化層的方式來進行矽烷耦合處理,(ii)以使矽烷耦合劑層中的矽烷分子有規則地配向的方式來進行矽烷耦合處理等方法。作為(i)的具體例,可列舉向矽烷耦合劑水溶液添加醇之方法,作為(ii)的具體例,可列舉使從利用矽烷水溶液處理粗化處理銅箔之後至利用暖風進行乾燥之前的時間延長之方法等。In addition, in order to make the number of bubbles in the interface between the surface roughened layer and the insulating substrate be 2 or less on the 2.54 µm line in the width direction of the copper foil substrate, methods such as improving the wettability of the surface roughened layer to the surface of the insulating substrate can be adopted. . Therefore, for example, (i) the silane coupling treatment is performed so that the silane coupling agent layer is uniformly formed on the surface roughened layer, and (ii) the silane coupling agent layer is regularly aligned in the silane coupling agent layer. Silane coupling processing and other methods. Specific examples of (i) include a method of adding an alcohol to an aqueous solution of a silane coupling agent, and specific examples of (ii) include a method in which the copper foil is processed after the roughening treatment of the copper foil with the silane solution and before drying with warm air. How to extend time.

(2)基底層的形成步驟 根據需要而於表面粗化層上形成含有Ni之基底層。 (3)耐熱處理層的形成步驟 根據需要而於表面粗化層上或基底層上形成含有Zn之耐熱處理層。 (4)防銹處理層的形成步驟 根據需要而將形成有上述層之銅箔浸於pH值低於3.5的含有Cr化合物之水溶液,並以0.3 A/dm2 以上的電流密度進行鍍鉻處理,藉此於表面粗化層上、基底層上或耐熱處理層上形成防銹處理層。 (5)矽烷耦合劑層的形成步驟 於表面粗化層上、基底層上、耐熱處理層上或防銹處理層上形成矽烷耦合劑層。(2) Forming step of base layer A base layer containing Ni is formed on the surface roughening layer as necessary. (3) Step of forming a heat-resistant treatment layer A heat-resistant treatment layer containing Zn is formed on the surface roughened layer or the base layer as necessary. (4) the step of forming the rust-preventive treatment layer, immersing the copper foil on which the above-mentioned layer has been formed in an aqueous solution containing a Cr compound having a pH value lower than 3.5, and performing chrome plating treatment at a current density of 0.3 A / dm 2 or more, Thereby, an anti-rust treatment layer is formed on the surface roughening layer, the base layer, or the heat-resistant treatment layer. (5) The step of forming the silane coupling agent layer forms a silane coupling agent layer on the surface roughening layer, the base layer, the heat-resistant treatment layer or the rust-proof treatment layer.

〔覆銅積層板的製造〕 本實施方式的覆銅積層板,藉由如下的步驟來製造。 (1)表面處理銅箔的製作 遵照上述(1)至(5)來製作表面處理銅箔。 (2)覆銅積層板之製造(積層)步驟 將以上述方式製作的表面處理銅箔與絕緣基板重疊在一起,使構成表面處理銅箔之矽烷耦合劑層的表面與絕緣基板的貼合面相對,之後進行加熱及加壓處理而使兩者密接,由此來製造覆銅積層板。 另外,需要說明的是,上述內容僅顯示了本發明的實施方式的實例,可於不脫離本發明主旨的範圍內進行各種變更。 [實施例][Production of copper-clad laminated board] The copper-clad laminated board of the present embodiment is manufactured by the following steps. (1) Production of surface-treated copper foil The surface-treated copper foil was produced in accordance with the above (1) to (5). (2) The manufacturing (lamination) step of the copper-clad laminated board overlaps the surface-treated copper foil produced in the above manner with the insulating substrate so that the surface of the silane coupling agent layer constituting the surface-treated copper foil and the bonding surface of the insulating substrate On the other hand, a copper-clad laminated board is manufactured by performing heating and pressurizing treatment to make the two adhere to each other. In addition, it should be noted that the above contents only show examples of embodiments of the present invention, and various changes can be made without departing from the spirit of the present invention. [Example]

(實施例1) 於下述條件下,將表面處理銅箔製作成厚度為18 µm的未粗化(表面粗糙度Rz約為0.8 µm)的銅箔基體。 (1)表面粗化層的形成 針對銅箔基體表面的表面粗化處理,以如下順序進行而形成表面粗化層:於表1的條件下進行表面粗化鍍覆處理1,接著進行以下所示的表面粗化鍍覆處理2。(Example 1) Under the following conditions, a surface-treated copper foil was produced as a copper foil base body having a thickness of 18 µm without roughening (surface roughness Rz is about 0.8 µm). (1) Formation of surface roughening layer For the surface roughening treatment of the surface of the copper foil substrate, the surface roughening layer is formed in the following order: the surface roughening plating treatment 1 is performed under the conditions of Table 1, and then the following Shown surface roughening plating treatment 2.

[表1]

Figure TW201800242AD00001
[Table 1]
Figure TW201800242AD00001

(表面粗化鍍覆處理2) 硫酸銅:以銅濃度計13至72 g/L 硫酸濃度:26至133 g/L 液溫:18至67℃ 電流密度:3至67 A/dm2 處理時間:1秒至1分鐘55秒(Surface roughening plating treatment 2) Copper sulfate: 13 to 72 g / L based on copper concentration Sulfuric acid concentration: 26 to 133 g / L Liquid temperature: 18 to 67 ° C Current density: 3 to 67 A / dm 2 Processing time : 1 second to 1 minute and 55 seconds

(2)含有Ni之基底層的形成 於銅箔基體的表面形成表面粗化層後,於表面粗化層上,以下述的鍍鎳條件來進行電鍍,藉此形成基底層(Ni的附著量為0.06 mg/dm2 )。 <鍍鎳條件> 硫酸鎳:以鎳金屬計5.0 g/L 過硫酸銨40.0 g/L 硼酸28.5 g/L 電流密度1.5 A/dm2 pH值3.8 溫度28.5℃ 時間1秒至2分鐘(2) The Ni-containing base layer is formed on the surface of the copper foil substrate and a surface roughened layer is formed. Then, on the surface roughened layer, electroplating is performed under the following nickel plating conditions, thereby forming the base layer (Ni adhesion amount) 0.06 mg / dm 2 ). <Nickel plating conditions> Nickel sulfate: 5.0 g / L ammonium persulfate based on nickel metal 40.0 g / L boric acid 28.5 g / L current density 1.5 A / dm 2 pH value 3.8 temperature 28.5 ℃ time 1 second to 2 minutes

(3)含有Zn之耐熱處理層的形成 形成基底層後,於該基底層上,以下述的鍍鋅條件來進行電鍍,藉此形成耐熱處理層(Zn的附著量:0.05 mg/dm2 )。 <鍍鋅條件> 硫酸鋅七水合物1至30 g/L 氫氧化鈉10至300 g/L 電流密度0.1至10 A/dm2 溫度5至60℃ 時間1秒至2分鐘(3) Formation of heat-resistant treatment layer containing Zn After forming a base layer, a heat-resistant treatment layer was formed by plating on the base layer under the following zinc plating conditions (the amount of Zn attached: 0.05 mg / dm 2 ) . <Zinc plating conditions> Zinc sulfate heptahydrate 1 to 30 g / L Sodium hydroxide 10 to 300 g / L Current density 0.1 to 10 A / dm 2 Temperature 5 to 60 ° C Time 1 second to 2 minutes

(4)含有Cr之防銹處理層的形成 形成耐熱處理層後,於該耐熱處理層上,以下述的鍍鉻處理條件來進行處理,藉此形成防銹處理層(Cr的附著量:0.02 mg/dm2 )。 <鍍鉻條件> (鍍鉻浴) 鉻酸酐CrO3 2.5 g/L pH值2.5 電流密度0.5 A/dm2 溫度15至45℃ 時間1秒至2分鐘(4) Formation of rust-resistant treatment layer containing Cr After forming a heat-resistant treatment layer, the heat-resistant treatment layer was treated under the following chrome plating treatment conditions to form a rust-resistant treatment layer (Cr adhesion amount: 0.02 mg / dm 2 ). <Chrome plating conditions> (Chrome plating bath) Chromic anhydride CrO 3 2.5 g / L pH value 2.5 Current density 0.5 A / dm 2 Temperature 15 to 45 ° C Time 1 second to 2 minutes

(5)矽烷耦合劑層的形成 形成防銹處理層後,於該防銹處理層上,以表2所示的條件,向矽烷耦合劑水溶液添加甲醇或乙醇,並塗布已調整為規定的pH值的處理液。其後,保持規定的時間,之後利用暖風進行乾燥,藉此形成表3所示的矽烷附著量之矽烷耦合劑層。另外,表3中的斜體的的數值,表示本發明的適當範圍外之數值。(5) Formation of Silane Coupling Agent Layer After the rust-preventive treatment layer is formed, methanol or ethanol is added to the silane-coupling agent aqueous solution under the conditions shown in Table 2 and the coating is adjusted to a predetermined pH. Value of process fluid. Thereafter, the silane coupling agent layer having a silane adhesion amount shown in Table 3 was formed by maintaining the silane coupling agent in the amount shown in Table 3 by keeping it for a predetermined time. The values in italics in Table 3 represent values outside the appropriate range of the present invention.

[表2]

Figure TW201800242AD00002
[Table 2]
Figure TW201800242AD00002

[表3]

Figure TW201800242AD00003
[table 3]
Figure TW201800242AD00003

(實施例2至實施例18) 表面粗化鍍覆處理1是根據表1的內容來進行,矽烷耦合劑處理是根據表2的內容來進行,除此以外與實施例1同樣地實施處理。 (比較例1至比較例7及比較例9至比較例14) 表面粗化鍍覆處理1是根據表1的內容來進行,矽烷耦合劑處理是根據表2的內容來進行,除此以外與實施例1同樣地實施處理。(Examples 2 to 18) The surface roughening plating treatment 1 was performed in accordance with the content of Table 1, and the silane coupling agent treatment was performed in accordance with the content of Table 2. The treatment was performed in the same manner as in Example 1. (Comparative Example 1 to Comparative Example 7 and Comparative Example 9 to Comparative Example 14) The surface roughening plating treatment 1 was performed according to the content of Table 1, and the silane coupling agent treatment was performed according to the content of Table 2. In Example 1, the treatment was performed in the same manner.

(比較例8) 使用輥狀液晶聚合物膜(由Kuraray股份有限公司製造的Vecster(註冊商標)CT-Z),以10分鐘的處理時間浸於氫氧化鉀溶液(液溫80℃)中來進行蝕刻並進行表面粗化處理。接著,藉由下述的無電鍍銅浴而使無電鍍銅層形成於經表面粗化處理的熱塑性樹脂膜上。(Comparative Example 8) A roll-shaped liquid crystal polymer film (Vecster (registered trademark) CT-Z manufactured by Kuraray Co., Ltd.) was used and immersed in a potassium hydroxide solution (liquid temperature 80 ° C) for a processing time of 10 minutes. Etching and surface roughening are performed. Next, an electroless copper plating layer was formed on the surface-processed thermoplastic resin film by the electroless copper plating bath described below.

<無電鍍銅浴> 硫酸銅‧五水合物(以銅成分計)19 g/L HEEDTA(螯合劑)50 g/L 亞膦酸鈉(還原劑)30 g/L 氯化鈉20 g/L 磷酸氫二鈉15 g/L 其後,以鍍銅層整體的厚度為20 µm之方式形成電鍍銅層,該鍍銅層包含利用硫酸銅浴而形成於熱塑性樹脂膜上之無電鍍銅層。另外,比較例8是在滿足專利文獻1所記載的發明範圍的條件下製作而成者。< Electroless copper bath > Copper sulfate‧pentahydrate (based on copper content) 19 g / L HEEDTA (chelating agent) 50 g / L Sodium phosphinate (reducing agent) 30 g / L Sodium chloride 20 g / L Disodium hydrogen phosphate 15 g / L Thereafter, an electroplated copper layer was formed so that the entire thickness of the copper plating layer was 20 µm. The copper plating layer included an electroless copper layer formed on a thermoplastic resin film using a copper sulfate bath. In addition, Comparative Example 8 was produced under conditions satisfying the scope of the invention described in Patent Document 1.

(試片的特性評價) 針對各試片進行各種測定及評價,其結果如表3所示。 (1)線長比Da/Db及凹凸表面中的凹凸的平均高低差H的測定 於與圖3中的雙箭頭所示的銅箔基體面(面方向P)正交之剖面,將沿前述表面粗化層的凹凸表面120而測定的沿面長度Da相對於沿前述銅箔基體110的面而測定的沿面長度Db之比Da/Db作為線長比。若該剖面中的表面粗化層的凹凸表面,形成具有更多或更大的凹凸的形狀,則線長比會變大。(Characteristic Evaluation of Test Strips) Various measurements and evaluations were performed on each test strip. The results are shown in Table 3. (1) The line length ratio Da / Db and the average height difference H of the unevenness on the uneven surface are measured on a cross section orthogonal to the copper foil base surface (plane direction P) shown by the double arrow in FIG. The ratio Da / Db of the creeping length Da measured on the uneven surface 120 of the surface roughened layer to the creeping length Db measured along the surface of the copper foil base 110 is defined as the line length ratio. If the uneven surface of the surface roughening layer in this cross section has a shape having more or more irregularities, the line length ratio becomes larger.

藉由離子研磨裝置(日立製作所製造:IM4000(型號))對各試片進行處理,並使用掃描型電子顯微鏡(SEM:日立製作所製造:SU8020(型號))觀察經處理的各試片的剖面,然後根據以下所示的順序來測定上述線長比Da/Db。根據以10000倍的倍率放大(本案的圖像內視野的實際寬度為12.7 µm)的觀察圖像來計算。使用圖像分析軟體Winroof(三谷商事)來分析SEM的觀察圖像,藉此測定如圖3中的粗線所示的表面粗化層的凹凸表面上的沿面長度Da。亦可使用其他圖像分析軟體而以相同的方式進行測定。關於SEM的倍率,較佳為使SEM圖像的寬度處於5至15 µm的範圍。於本案中,於10處視野分別測定Dan/Dbn(n=1至10),並將其平均值作為Da/Db。Each test piece was processed with an ion polishing apparatus (manufactured by Hitachi, Ltd .: IM4000 (model)), and a cross section of each processed test piece was observed using a scanning electron microscope (SEM: Hitachi, Ltd .: SU8020 (model)). Then, the above-mentioned wire length ratio Da / Db was measured according to the procedure shown below. Calculated based on the observation image magnified at 10,000 times (the actual width of the field of view in the image in this case is 12.7 µm). The image analysis software Winroof (Mitani Corporation) was used to analyze the observation image of the SEM, thereby measuring the creeping length Da on the uneven surface of the surface roughened layer as shown by the thick line in FIG. 3. Measurements can also be performed in the same manner using other image analysis software. Regarding the magnification of the SEM, the width of the SEM image is preferably in a range of 5 to 15 µm. In this case, Dan / Dbn (n = 1 to 10) was measured at 10 visual fields, and the average value was used as Da / Db.

接著,以如下的方式來測定凹凸表面的平均高低差。首先,將觀察倍率放大至200倍(本案的圖像內視野的實際寬度為63.5 µm),於任意位置,在誤差±1°的範圍內使凹凸表面的延伸方向與畫面的水平方向一致。接著,將觀察倍率放大至10,000倍(本案的圖像內視野的實際寬度為12.7 µm),將第1凹部的底部位置設為A點,該第1凹部的底部位置是任意位置在SEM圖像內所顯示出來的形成凹凸表面的凹凸中的最低點位置。然後,於除第1凹部及與該第1凹部鄰接之凹部以外的剩餘凹部中,將底部位置為最低點位置之第2凹部的底部位置設為B點。然後,將連結A點與B點而成之直線設為基線BL1(圖4(a))。其後,在放大至50,000倍(本案的圖像內視野的實際寬度為2.54 µm)的SEM圖像中,畫出與基線BL1平行之基線BL2,其通過第3凹部的底部位置,該第3凹部的底部位置是在任意位置形成凹凸表面的凹凸中的最低點位置,將自基線BL2至沿垂直方向離得最遠的凸部的頂點的距離設為高低差H並進行測定(圖4(b))。於本實施例中,於5處視野分別測定高低差並將其平均值作為平均高低差H。Next, the average height difference of the uneven surface was measured as follows. First, magnify the observation magnification to 200 times (the actual width of the field of view in the image in this case is 63.5 µm), and make the extension direction of the uneven surface consistent with the horizontal direction of the screen within an error range of ± 1 ° at any position. Next, magnify the observation magnification to 10,000 times (the actual width of the field of view in the image in this case is 12.7 µm), and set the bottom position of the first recessed portion to point A. The bottom position of the first recessed portion is an arbitrary position in the SEM image. Position of the lowest point in the unevenness shown in the inner surface forming the uneven surface. Then, among the remaining recesses other than the first recess and the recess adjacent to the first recess, the bottom position of the second recess with the bottom position being the lowest point position is set to point B. Then, a straight line connecting the A point and the B point is set as the baseline BL1 (FIG. 4 (a)). Thereafter, in the SEM image magnified to 50,000 times (the actual width of the field of view in the image of this case is 2.54 µm), a baseline BL2 parallel to the baseline BL1 is drawn, and passes through the bottom position of the third recess, the third The bottom position of the concave portion is the lowest point of the unevenness that forms the uneven surface at any position. The distance from the baseline BL2 to the vertex of the convex portion that is furthest in the vertical direction is set as the height difference H and measured (Figure 4 ( b)). In this embodiment, the height difference is measured at five visual fields and the average value is used as the average height difference H.

(2)表面粗化層與絕緣基材的界面的氣泡數量 如圖5所示,表面粗化層43與絕緣基板42的界面的氣泡數量是按照以下所示的順序進行測定。首先,使用壓合機於絕緣基板製造廠家所推薦的標準壓合條件下壓合絕緣基板42(預浸料層)與銅箔43而製作積層體(於本案中,使用松下股份有限公司的MEGTRON6:R-5670作為絕緣基板42,並以如下壓合條件進行積層:壓合溫度為200℃、壓合壓力為35 kgf/cm2 ,壓合時間為160分鐘)。接著,使用前述離子研磨裝置對前述積層體進行處理,並利用前述掃描型電子顯微鏡將經處理的積層體的剖面放大至50000倍(本案的圖像內視野的實際寬度為2.54 µm),並觀察積層體的表面粗化層43與絕緣基板42的界面。如圖5所示,於10處分別測定存在於寬度為2.54 µm的線上哦表面粗化層43與絕緣基板42的界面的氣泡41的數量,並將10處的氣泡的數量的平均值作為表面粗化層43與絕緣基板42的界面的氣泡數量Vi。所謂本案中的氣泡,是指於表面粗化層與絕緣基板的界面中,未填充絕緣基板之區域,其大小以長徑計為1.0 µm以下。(2) The number of bubbles at the interface between the surface roughened layer and the insulating substrate is shown in FIG. 5. The number of bubbles at the interface between the surface roughened layer 43 and the insulating substrate 42 is measured in the following order. First, a laminated machine was used to laminate the insulating substrate 42 (prepreg layer) and the copper foil 43 under standard lamination conditions recommended by the insulating substrate manufacturer to produce a laminated body (in this case, MEGTRON 6 of Panasonic Corporation was used). : R-5670 is used as the insulating substrate 42 and laminated under the following pressing conditions: a pressing temperature of 200 ° C., a pressing pressure of 35 kgf / cm 2 , and a pressing time of 160 minutes). Next, the laminated body was processed using the ion milling device, and the cross-section of the processed laminated body was magnified to 50000 times using the scanning electron microscope (the actual width of the field of view in the image in this case is 2.54 µm), and observed The interface between the surface roughened layer 43 of the laminated body and the insulating substrate 42. As shown in FIG. 5, the number of bubbles 41 existing at the interface between the surface roughened layer 43 and the insulating substrate 42 was measured at 10 places with a width of 2.54 μm, and the average of the number of bubbles at 10 places was used as the surface. The number of bubbles Vi at the interface between the roughened layer 43 and the insulating substrate 42. The term "bubbles" in this case refers to the area where the insulating substrate is not filled in the interface between the surface roughened layer and the insulating substrate, and the size is 1.0 µm or less in terms of major diameter.

(3)矽烷附著量的測定 利用螢光X射線分析裝置(股份有限公司RIGAKU製造的ZSXPrimus,分析直徑:Φ35 mm)進行分析。 (4)絕緣基板密接後的線長比Da'/Db及凹凸表面中的凹凸的平均高低差H'的測定 於使各銅箔與絕緣基板黏著後,線長比Da'/Db和凹凸表面中的凹凸的平均高低差H',以與上述Da/Db和H的測定相同的方式來進行。(3) Measurement of Silane Adhesion A fluorescent X-ray analyzer (ZSXPrimus, manufactured by RIGAKU, Inc., analysis diameter: 35 mm) was used for analysis. (4) Measurement of the line length ratio Da '/ Db and the average height difference H' of the unevenness on the uneven surface after the insulating substrate is in close contact. After bonding each copper foil to the insulating substrate, the line length ratio Da '/ Db and the uneven surface The average height difference H 'of the unevenness in the middle was performed in the same manner as in the above-mentioned measurement of Da / Db and H.

(5)傳輸特性(高頻下的傳輸損耗的測定) 於使各銅箔與絕緣基板黏著後,製作傳輸特性測定用樣品而對高頻帶中的傳輸損耗進行測定。使用市售的聚苯醚系絕緣基板(松下股份有限公司製造的MEGTRON 6)作為絕緣基板。傳輸損耗測定用基板採用帶狀線構造,導體長度為400 mm,導體厚度為18 µm,並且導體寬度調整為0.14 mm,整體的厚度調整為0.31 mm,特性阻抗調整為50 Ω。關於評價,使用向量網路分析儀E8363B(KEYSIGHT TECHNOLOGIES公司製造)來測定10 GHz和40 GHz時的傳輸損耗。將於導體長度為400 mm時所測定的傳輸損耗換算成導體長度為1000 mm時的值,並將該值作為傳輸損耗的測定結果,單位為dB/m。具體而言,將導體長度為400 mm時所測定的傳輸損耗的值乘以2.5後所得到的值作為傳輸損耗的測定值。結果如表3所示,關於傳輸特性,於10 GHz時將傳輸損耗低於19.5 dB/m的情況視為合格,且於40 GHz時將傳輸損耗低於66.0 dB/m的情況視為合格。(5) Transmission characteristics (measurement of transmission loss at high frequencies) After each copper foil is adhered to the insulating substrate, a transmission characteristic measurement sample is prepared to measure the transmission loss in a high frequency band. A commercially available polyphenylene ether-based insulating substrate (MEGTRON 6 manufactured by Panasonic Corporation) was used as the insulating substrate. The transmission loss measurement substrate uses a strip line structure, the conductor length is 400 mm, the conductor thickness is 18 µm, the conductor width is adjusted to 0.14 mm, the overall thickness is adjusted to 0.31 mm, and the characteristic impedance is adjusted to 50 Ω. For evaluation, a vector network analyzer E8363B (manufactured by KEYSIGHT TECHNOLOGIES) was used to measure transmission loss at 10 GHz and 40 GHz. The transmission loss measured when the conductor length is 400 mm is converted into a value when the conductor length is 1000 mm, and this value is used as a measurement result of the transmission loss, and the unit is dB / m. Specifically, the value obtained by multiplying the value of the transmission loss measured when the conductor length is 400 mm by 2.5 is used as the measured value of the transmission loss. The results are shown in Table 3. Regarding the transmission characteristics, a case where the transmission loss is less than 19.5 dB / m is considered acceptable at 10 GHz, and a case where the transmission loss is less than 66.0 dB / m is considered acceptable at 40 GHz.

(6)密接強度 測定表面處理銅箔與絕緣基板的密接強度。使用市售之聚苯醚基板作為絕緣基板。絕緣(樹脂)基板的硬化條件設為210℃、1小時。使用萬能材料試驗機(TENSILON,股份有限公司A&D製造)使銅箔與絕緣基板黏著,之後將試片蝕刻加工成10 mm寬度的電路配線,並藉由雙面膠帶將絕緣側固定於不銹鋼板,然後使電路配線沿90度方向以50 mm/分鐘的速度進行剝離,從而求出密接強度。關於初始密接性,將剝離強度為0.4 kN/m以上的情況視為合格,將剝離強度低於0.4 kN/m的情況視為不合格。(6) Adhesion strength The adhesion strength between the surface-treated copper foil and the insulating substrate was measured. A commercially available polyphenylene ether substrate was used as the insulating substrate. The hardening conditions of the insulating (resin) substrate were 210 ° C and 1 hour. A universal material testing machine (TENSILON, manufactured by A & D) was used to adhere the copper foil to the insulating substrate, and then the test piece was etched into a 10 mm wide circuit wiring, and the insulating side was fixed to the stainless steel plate with double-sided tape. Then, the circuit wiring was peeled at a speed of 50 mm / min in the direction of 90 degrees to obtain the adhesion strength. Regarding the initial adhesiveness, a case where the peel strength was 0.4 kN / m or more was regarded as acceptable, and a case where the peel strength was less than 0.4 kN / m was regarded as unacceptable.

(7)回焊耐熱性(銅箔與預浸料層之間) 首先,對回焊耐熱試驗(銅箔與預浸料層之間)的試片的製作方法進行說明。於雙面使銅箔積層而製作回焊試片(銅箔與預浸料層之間)。於本案中,回焊試片(銅箔與預浸料層之間)的尺寸為100 mm×100 mm。接著,將製成的試片通入至回焊爐中,並以頂溫度為260℃且時間為10秒鐘的加熱條件經歷10次。於上述條件下加熱之後,產生膨脹者用顯微鏡觀察膨脹區域的剖面,從而確認銅箔與預浸料層之間是否存在層間剝離。將銅箔與預浸料層之間未發生層間剝離者判定為「○(合格)」,將銅箔與預浸料層之間有1處發生層間剝離者判定為「Δ(合格)」,將銅箔與預浸料層之間有2處以上發生層間剝離者判定為「×(不合格)」。另外,回焊試驗的内容依據JIS C 60068-2-58。(7) Reflow heat resistance (between the copper foil and the prepreg layer) First, a method for preparing a test piece for the reflow heat resistance test (between the copper foil and the prepreg layer) will be described. Copper foil was laminated on both sides to prepare a reflow test piece (between the copper foil and the prepreg layer). In this case, the size of the reflow test piece (between the copper foil and the prepreg layer) was 100 mm × 100 mm. Next, the prepared test piece was put into a reflow furnace, and was subjected to heating 10 times at a top temperature of 260 ° C. and a time of 10 seconds. After heating under the above conditions, the expander observes the cross section of the expanded area with a microscope to confirm whether there is interlayer peeling between the copper foil and the prepreg layer. A person with no interlayer peeling between the copper foil and the prepreg layer was judged as "○ (pass)", and a person with interlayer peeling between the copper foil and the prepreg layer was judged as "Δ (pass)", Those who experienced interlayer peeling at two or more places between the copper foil and the prepreg layer were judged to be "× (Failed)". The content of the reflow test is based on JIS C 60068-2-58.

(8)回焊耐熱性(芯層與預浸料層之間) 下面對回焊耐熱試驗(芯層與預浸料層之間)的試片的製作方法進行說明。將於雙面積層有銅箔之絕緣基板作為芯層。利用氯化銅(II)溶液等對芯層進行蝕刻而使所有銅箔被溶解。藉由於經蝕刻的芯層的雙面積層作為絕緣基板之預浸料層與銅箔來製作回焊試片。於本案中,回焊試片(芯層與預浸料層之間)的尺寸為100 mm×100 mm。(8) Reflow heat resistance (between the core layer and the prepreg layer) Next, a method for producing a test piece for the reflow heat resistance test (between the core layer and the prepreg layer) will be described. A double-layered insulating substrate with a copper foil is used as a core layer. The core layer is etched with a copper (II) chloride solution or the like to dissolve all the copper foil. The double-area layer due to the etched core layer was used as a prepreg layer and a copper foil of the insulating substrate to produce a reflow test piece. In this case, the size of the reflow test piece (between the core layer and the prepreg layer) was 100 mm × 100 mm.

接著,將製成的試片通入至回焊爐中,並以頂溫度為260℃且時間為10秒鐘的加熱條件經歷10次。於上述條件下加熱之後,將芯層與預浸料層之間未發生層間剝離者判定為「○(合格)」,將芯層與預浸料層之間有1處發生層間剝離者判定為「Δ(合格)」,將芯層與預浸料層之間有2處以上發生層間剝離者判定為「×(不合格)」。另外,回焊試驗的内容依據JIS C 60068-2-58。Next, the prepared test piece was put into a reflow furnace, and was subjected to heating 10 times at a top temperature of 260 ° C. and a time of 10 seconds. After heating under the above-mentioned conditions, those who did not have interlayer peeling between the core layer and the prepreg layer were judged to be "○ (pass)", and those who had interlayer peeling between the core layer and the prepreg layer were judged to be "Δ (pass)" judged "x (unacceptable)" if the interlayer peeling occurred at two or more places between the core layer and the prepreg layer. The content of the reflow test is based on JIS C 60068-2-58.

由表3可明確得知,實施例1至實施例18在與絕緣基板的密接性、傳輸特性及回焊耐熱性的所有性能方面均為合格等級。另一方面,關於比較例1,其線長比Da/Db和Da'/Db小,凹凸表面中的凹凸的平均高低差H和H'亦低,所以密接強度低,回焊耐熱性亦差。關於比較例2,其線長比Da/Db和Da'/Db大,凹凸表面中的凹凸的平均高低差H和H'亦高,所以傳輸損耗大,傳輸特性差。關於比較例3,其線長比Da/Db和Da/Db'小,矽烷附著量亦少,所以回焊耐熱性差。關於比較例4,其線長比Da/Db和Da'/Db小,凹凸表面中的凹凸的平均高低差H及H'低,矽烷附著量多,所以密接強度低。關於比較例5至比較例7,其線長比Da/Db和Da/Db'大,平均高低差H和H'大,此外表面粗化層與絕緣基板的界面的氣泡數量多,所以回焊耐熱性差。關於比較例8,其線長比Da/Db和Da'/Db小,凹凸表面中的凹凸的平均高低差H低,所以密接強度低。關於比較例9至比較例14,其線長比Da/Db和Da'/Db大,尤其是比較例9至比較例11中,凹凸表面中的凹凸的平均高低差H和H'亦高,所以傳輸損耗大,傳輸特性差。It is clear from Table 3 that Examples 1 to 18 are all acceptable grades in terms of all properties of adhesion to the insulating substrate, transmission characteristics, and reflow heat resistance. On the other hand, in Comparative Example 1, the line length is smaller than Da / Db and Da '/ Db, and the average height difference H and H' of the unevenness on the uneven surface is also low, so the adhesion strength is low and the reflow heat resistance is also poor. . With regard to Comparative Example 2, the line length is larger than Da / Db and Da '/ Db, and the average height difference H and H' of the unevenness in the uneven surface is also high, so the transmission loss is large and the transmission characteristics are poor. Regarding Comparative Example 3, since the wire length was smaller than Da / Db and Da / Db 'and the amount of silane attached was also small, the reflow resistance was poor. In Comparative Example 4, the line length was smaller than Da / Db and Da '/ Db, the average height difference H and H' of the unevenness on the uneven surface was low, and the silane adhesion amount was large, so the adhesion strength was low. Regarding Comparative Examples 5 to 7, since the line length is larger than Da / Db and Da / Db ', the average height difference H and H' are large, and the number of bubbles at the interface between the surface roughened layer and the insulating substrate is large, so reflow soldering is required. Poor heat resistance. In Comparative Example 8, the line length was smaller than Da / Db and Da '/ Db, and the average height difference H of the unevenness on the uneven surface was low, so the adhesion strength was low. Regarding Comparative Examples 9 to 14, the line lengths are larger than Da / Db and Da '/ Db. Especially in Comparative Examples 9 to 11, the average height difference H and H' of the unevenness on the uneven surface is also high. Therefore, the transmission loss is large and the transmission characteristics are poor.

[產業上之可利用性] 藉由本發明,能提供一種表面處理銅箔及使用該表面處理銅箔製成的覆銅積層板,該表面處理銅箔可確保與絕緣基板充分的密接性且兼具高度的回焊耐熱性與傳輸特性,該絕緣基板因相對介電常數和介電損耗正切低而介電特性優異,從而能應對高速傳輸處理大容量資訊之高頻化資訊通訊設備的高性能化及高機能化。[Industrial Applicability] According to the present invention, it is possible to provide a surface-treated copper foil and a copper-clad laminated board made using the surface-treated copper foil. The surface-treated copper foil can ensure sufficient adhesion to the insulating substrate and simultaneously With high reflow heat resistance and transmission characteristics, this insulating substrate has excellent dielectric properties due to its low relative dielectric constant and dielectric loss tangent, so it can cope with high-performance high-frequency information communication equipment that can process large-capacity information at high speed. And high performance.

11‧‧‧頸縮形狀
110‧‧‧銅箔基體
120‧‧‧表面粗化層
Da‧‧‧沿表面粗化層的凹凸表面而測定的沿面長度
Db‧‧‧沿前述銅箔基體面而測定的沿面長度
P‧‧‧基板的寬度
41‧‧‧氣泡
42‧‧‧絕緣基板
43‧‧‧表面粗化層
11‧‧‧ neck shape
110‧‧‧ copper foil substrate
120‧‧‧ surface roughening layer
Da‧‧‧Criminal length measured along the uneven surface of the surface roughening layer
Db‧‧‧Criminal length measured along the aforementioned copper foil substrate
P‧‧‧ substrate width
41‧‧‧ Bubble
42‧‧‧ Insulating substrate
43‧‧‧ surface roughening layer

圖1(a)是顯示本發明的具有頸縮形狀之表面粗化層的狀態的剖面圖;所謂頸縮形狀,是指如圖1的形狀,即與粗化粒子的最大寬度相比,粗化粒子的根部的寬度變窄,從而於粗化粒子的根部具有凹處。 圖1(b)是顯示先前的表面粗化層的狀態的剖面圖。 圖2是示意性地顯示構成凹凸表面的凹凸的平均高低差H的剖面圖,該凹凸表面構成表面粗化層。 圖3是示意性地顯示圖1所示的表面粗化層的凹凸表面上的沿面長度Da的剖面圖。 圖4(a)是顯示用以測定構成凹凸表面的凹凸的平均高低差H之基線BL1的剖面圖,該凹凸表面構成表面粗化層。 圖4(b)是同樣地顯示基線BL2的剖面圖。 圖5是示意性地顯示存在於表面粗化層與絕緣基板的界面的氣泡的剖面圖。FIG. 1 (a) is a cross-sectional view showing the state of the surface roughened layer having a necked shape according to the present invention; the so-called necked shape refers to the shape shown in FIG. The width of the root of the roughened particle is narrowed, so that the root of the roughened particle has a recess. FIG. 1 (b) is a cross-sectional view showing a state of a conventional surface roughening layer. FIG. 2 is a cross-sectional view schematically showing the average height difference H of the unevenness constituting the uneven surface, the uneven surface constituting the surface roughening layer. 3 is a cross-sectional view schematically showing a creeping length Da on the uneven surface of the surface roughening layer shown in FIG. 1. FIG. 4A is a cross-sectional view showing a baseline BL1 for measuring the average height difference H of the unevenness constituting the uneven surface, and the uneven surface constitutes a surface roughened layer. FIG. 4 (b) is a sectional view showing the baseline BL2 in the same manner. 5 is a cross-sectional view schematically showing air bubbles existing at an interface between a surface roughened layer and an insulating substrate.

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Da‧‧‧沿表面粗化層的凹凸表面而測定的沿面長度 Da‧‧‧Criminal length measured along the uneven surface of the surface roughening layer

Db‧‧‧沿前述銅箔基體面而測定的沿面長度 Db‧‧‧Criminal length measured along the aforementioned copper foil substrate

P‧‧‧基板的寬度 P‧‧‧ substrate width

Claims (10)

一種表面處理銅箔,其是在銅箔基體上設置表面粗化層而成者,其特徵在於:前述表面粗化層具有複數個粗化粒子,前述表面粗化層的表面構成為凹凸表面,於與前述銅箔基體面正交之剖面,沿前述表面粗化層的凹凸表面而測定的沿面長度(Da)相對於沿前述銅箔基體面而測定的沿面長度(Db)之比(Da/Db)處於1.05至4.00的範圍,前述凹凸表面中的凹凸的平均高低差(H)處於0.2至1.3 µm的範圍,進一步,於前述表面粗化層上直接地或間隔中間層地具有以0.0003至0.0300 mg/dm2 的矽烷附著量而形成之矽烷耦合劑層。A surface-treated copper foil obtained by providing a surface roughened layer on a copper foil substrate, wherein the surface roughened layer has a plurality of roughened particles, and the surface of the surface roughened layer is configured as an uneven surface. The ratio of the creepage length (Da) measured along the uneven surface of the surface roughened layer to the creepage length (Db) measured along the copper foil base surface in a cross section orthogonal to the copper foil base surface (Da / Db) is in the range of 1.05 to 4.00, and the average height difference (H) of the unevenness in the uneven surface is in the range of 0.2 to 1.3 µm. Further, the surface roughened layer has an interval of 0.0003 to Silane coupling agent layer formed with a silane adhesion amount of 0.0300 mg / dm 2 . 如請求項1所述如請求項1所述之表面處理銅箔,其中,前述凹凸表面具有頸縮形狀。The surface-treated copper foil according to claim 1, wherein the uneven surface has a necked shape. 如請求項1或2所述之表面處理銅箔,其中,前述沿面長度之比(Da/Db)處於1.05至3.20倍的範圍,前述凹凸的平均高低差(H)處於0.2至0.8 µm的範圍,並且當將銅箔與絕緣基板積層時,於前述銅箔基體上的垂直於前述銅箔的製造方向之方向也就是寬度方向的2.54 µm的線上,前述表面粗化層與絕緣基板的界面的氣泡數量為2個以下。The surface-treated copper foil according to claim 1 or 2, wherein the ratio of the length along the surface (Da / Db) is in a range of 1.05 to 3.20 times, and the average height difference (H) of the unevenness is in a range of 0.2 to 0.8 µm. And when the copper foil and the insulating substrate are laminated, on a line on the copper foil substrate perpendicular to the manufacturing direction of the copper foil, that is, on a line of 2.54 µm in width, the interface between the surface roughening layer and the insulating substrate The number of bubbles is 2 or less. 如請求項1至3中任一項所述之表面處理銅箔,其中,前述沿面長度之比(Da/Db)處於1.05至1.60倍的範圍,前述凹凸的平均高低差(H)處於0.2至0.3 µm的範圍,並且當將銅箔與絕緣基板積層時,於前述銅箔基體的寬度方向的2.54 µm的線上,前述表面粗化層與絕緣基板的界面的氣泡數量為1個以下。The surface-treated copper foil according to any one of claims 1 to 3, wherein the ratio of the length along the surface (Da / Db) is in a range of 1.05 to 1.60 times, and the average height difference (H) of the unevenness is in a range of 0.2 to In the range of 0.3 µm, when the copper foil and the insulating substrate are laminated, the number of bubbles at the interface between the surface roughened layer and the insulating substrate is 1 or less on a line of 2.54 µm in the width direction of the copper foil substrate. 如請求項1至4中任一項所述之表面處理銅箔,其中,前述矽烷耦合劑層的矽烷附著量為0.0005至0.0120 mg/dm2The surface-treated copper foil according to any one of claims 1 to 4, wherein the silane adhesion amount of the silane coupling agent layer is 0.0005 to 0.0120 mg / dm 2 . 如請求項1至5中任一項所述之表面處理銅箔,其中,前述中間層是由選自含有Ni之基底層、含有Zn之耐熱處理層及含有Cr之防銹處理層中的至少1層構成。The surface-treated copper foil according to any one of claims 1 to 5, wherein the intermediate layer is at least one selected from a base layer containing Ni, a heat-resistant treatment layer containing Zn, and a rust-resistant treatment layer containing Cr. 1 layer structure. 如請求項1至6中任一項所述之表面處理銅箔,其中,前述矽烷耦合劑層是由選自環氧系矽烷、胺基系矽烷、乙烯基系矽烷、甲基丙烯酸系矽烷、丙烯酸系矽烷、苯乙烯基系矽烷、醯脲系矽烷、巰基系矽烷、硫化物系矽烷及異氰酸酯基系矽烷中的至少1種構成。The surface-treated copper foil according to any one of claims 1 to 6, wherein the silane coupling agent layer is selected from the group consisting of epoxy-based silane, amine-based silane, vinyl-based silane, methacrylic-based silane, At least one of an acrylic silane, a styryl-based silane, a sulfonylurea-based silane, a mercapto-based silane, a sulfide-based silane, and an isocyanate-based silane. 一種覆銅積層板,其於請求項1至7中任一項所述之表面處理銅箔的表面粗化層側的面上具有絕緣基板。A copper-clad laminated board having an insulating substrate on the surface of the surface-roughened layer side of the surface-treated copper foil according to any one of claims 1 to 7. 一種覆銅積層板,其是在表面處理銅箔的表面粗化層側具有絕緣基板者,該表面處理銅箔是在銅箔基體上設置前述表面粗化層而成,該覆銅積層板的特徵在於:於與該銅箔基體面正交之剖面,沿前述表面粗化層與前述絕緣基板的界面而測定的界面長度(Da')相對於沿前述銅箔基體面而測定的沿面長度(Db)之比(Da'/Db)處於1.05至4.00倍的範圍,前述界面中的凹凸的平均高低差(H')處於0.2至1.3 µm的範圍,進一步,於前述表面粗化層與前述絕緣基板之間,直接地或間隔中間層地具有0.0003至0.0300 mg/dm2 的矽烷附著量之矽烷耦合劑層。A copper-clad laminated board is provided with an insulating substrate on a surface roughened layer side of a surface-treated copper foil. The surface-treated copper foil is formed by providing the foregoing surface roughened layer on a copper foil substrate. It is characterized in that the cross-section length (Da ') measured along the interface between the surface roughened layer and the insulating substrate in a cross section orthogonal to the copper foil base surface is relative to the creep length measured along the copper foil base surface ( The ratio of Db) (Da '/ Db) is in the range of 1.05 to 4.00 times, and the average height difference (H') of the unevenness in the interface is in the range of 0.2 to 1.3 µm. Furthermore, the surface roughening layer and the insulation are further reduced. A silane coupling agent layer having a silane adhesion amount of 0.0003 to 0.0300 mg / dm 2 directly or spaced between the substrates. 如請求項9項所述之覆銅積層板,其中,於前述銅箔基體的寬度方向的2.54 µm的線上,前述表面粗化層與前述絕緣基板的界面的氣泡數量為2個以下。The copper-clad laminated board according to claim 9, wherein the number of bubbles at the interface between the surface roughened layer and the insulating substrate is 2.5 or less on a line of 2.54 µm in the width direction of the copper foil substrate.
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