TW202001000A - Surface-treated copper foil, copper-cladded laminate plate, and printed wiring board - Google Patents

Surface-treated copper foil, copper-cladded laminate plate, and printed wiring board Download PDF

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TW202001000A
TW202001000A TW108114061A TW108114061A TW202001000A TW 202001000 A TW202001000 A TW 202001000A TW 108114061 A TW108114061 A TW 108114061A TW 108114061 A TW108114061 A TW 108114061A TW 202001000 A TW202001000 A TW 202001000A
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copper foil
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treated copper
crystal grains
ratio
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TWI734976B (en
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佐藤章
中崎龍介
篠崎淳
佐佐木貴大
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日商古河電氣工業股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60Electroplating characterised by the structure or texture of the layers
    • C25D5/615Microstructure of the layers, e.g. mixed structure
    • C25D5/617Crystalline layers
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00Electroforming
    • C25D1/04Wires; Strips; Foils
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18Electroplating using modulated, pulsed or reversing current
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60Electroplating characterised by the structure or texture of the layers
    • C25D5/605Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/06Wires; Strips; Foils
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

Provided is a surface-treated copper foil which has such fine wiring pattern processability that a fine wring pattern having an L & S value of 30/30 [mu]m or less, for example, can be formed by a subtractive process having excellent process cost, and which has excellent close adhesiveness to a resin-made substrate. A surface-treated copper foil having, formed on a surface thereof, a roughened surface roughened by a roughening treatment, wherein the foil thickness is 10 [mu]m or less and the vertex curvature arithmetic average Ssc of the roughened surface is 0.7 to 3.8 [mu]m<SP>-1</SP> inclusive. When a cross section is analyzed by an electron backscatter diffraction method after heating at 200 DEG C for two hours, the ratio R1 of the number of crystal grains each having a crystal grain diameter of 0.5 [mu]m or more and less than 1.0 [mu]m is 0.51 to 0.97 inclusive, the ratio R2 of the number of crystal grains each having a crystal grain diameter of 1.0 [mu]m or more and less than 3.0 [mu]m is 0.03 to 0.42 inclusive and the ratio R3 of the number of crystal grains each having a crystal grain diameter of 3.0 [mu]m or more is 0.07 or less in crystal grains each having a crystal grain diameter of 0.5 [mu]m or more.

Description

表面處理銅箔、覆銅積層板及印刷線路板Surface-treated copper foil, copper-clad laminate and printed circuit board

本發明係關於一種表面處理銅箔、以及使用該表面處理銅箔之覆銅積層板及印刷線路板,該表面處理銅箔適於具有高密度配線電路(精細圖案)之印刷線路板等之微細配線加工性、與樹脂製基板之密接性優異。The present invention relates to a surface-treated copper foil, a copper-clad laminate and a printed wiring board using the surface-treated copper foil. The surface-treated copper foil is suitable for the fineness of printed wiring boards with high-density wiring circuits (fine patterns), etc. Wiring processability and adhesion to resin substrates are excellent.

作為用於覆銅積層板、印刷線路板之銅箔,使用藉由將析出至電解析出裝置之鼓之銅箔自鼓剝離而獲得之電解銅箔。自鼓剝離所得之電解銅箔之電解析出起始面(光滑面。以下,稱為「S面」)相對較平滑,作為相反側之面之電解析出結束面(粗糙面。以下,稱為「M面」)通常具有凹凸。於電解銅箔之M面上配置樹脂製基板並進行熱壓接而製造覆銅積層板,藉由對M面實施粗化處理將其粗化,而提高與樹脂製基板之接著性。As the copper foil used for the copper clad laminate and the printed wiring board, an electrolytic copper foil obtained by peeling the copper foil deposited on the drum of the electrolysis device from the drum is used. The electrolysis copper foil obtained by peeling off the drum has a relatively smooth starting surface (smooth surface. Hereinafter, referred to as "S surface"), and an end surface (rough surface. "M plane") usually has irregularities. A resin substrate is arranged on the M surface of the electrolytic copper foil and is subjected to thermocompression bonding to produce a copper-clad laminate. The M surface is roughened by roughening to improve the adhesion to the resin substrate.

最近,業界於銅箔之粗化面,預先貼合環氧樹脂等接著用樹脂,使該接著用樹脂成為半硬化狀態(B階段)之絕緣樹脂層,製成附樹脂之銅箔,將該附樹脂之銅箔用作表面電路形成用之銅箔,將該銅箔之絕緣樹脂層之側熱壓接於絕緣基板,從而製造印刷線路板(尤其是增層線路板)。對於增層線路板,期望將各種電子零件高度積體化,對應於此,對於配線圖案,亦要求高密度化,因而逐漸變為要求微細之線寬、線間間距之配線圖案、所謂之精細圖案之印刷線路板。例如,作為伺服器、路由器、通訊基站、車載基板等中所使用之多層基板或智慧型手機用多層基板,要求具有高密度極微細配線之印刷線路板(以下,稱為「高密度線路板」)。Recently, the industry has previously bonded an adhesive resin such as epoxy resin on the roughened surface of the copper foil to make the adhesive resin semi-cured (stage B) insulating resin layer to make a copper foil with resin The copper foil with resin is used as a copper foil for surface circuit formation, and the side of the insulating resin layer of the copper foil is thermocompression-bonded to an insulating substrate, thereby manufacturing a printed wiring board (especially a build-up wiring board). For multi-layer circuit boards, it is desired to integrate various electronic components highly. Corresponding to this, wiring patterns are also required to be denser, and thus gradually become wiring patterns requiring fine line widths and spacing between lines, so-called fine Patterned printed circuit board. For example, as a multilayer substrate used in servers, routers, communication base stations, automotive substrates, etc., or a multilayer substrate for smartphones, a printed circuit board with high-density and extremely fine wiring is required (hereinafter, referred to as "high-density circuit board" ).

任意階(AnyLayer)(利用配置之自由度高之雷射通孔將層間連接)之高密度線路板主要用於智慧型手機之主板,但近年來微細配線化不斷推進,要求線寬及線間之間距(以下,稱為「L&S」)分別為30 µm以下之配線。高密度線路板先前係由印刷線路板製造商利用使用光阻之減成法而製造,但若L&S變窄,則配線之剖面形狀崩塌,因此以如超過500 mm見方之大面積將高密度線路板進行封裝成型時,難以形成L&S為30 µm/30 µm(線寬(L)為30 µm,線間之間距(S)為30 µm)以下之配線。Any-layer (AnyLayer) high-density circuit boards (connected between layers using laser vias with a high degree of freedom in configuration) are mainly used for smart phone motherboards, but in recent years, fine wiring has been continuously promoted, requiring line width and line-to-line The wiring distance between them (hereinafter referred to as "L&S") is 30 µm or less. High-density circuit boards were previously manufactured by printed circuit board manufacturers using the photoresist subtraction method, but if the L&S becomes narrower, the cross-sectional shape of the wiring collapses, so the high-density circuit is made with a large area such as more than 500 mm square When the board is packaged and molded, it is difficult to form wiring with an L&S of 30 µm/30 µm (line width (L) of 30 µm and distance between lines (S) of 30 µm).

因此,最近,為了於高密度線路板中形成L&S為30 µm/30 µm以下之配線,MSAP法(Modified Semi Additive Process,改良半加成法)之導入不斷推進。然而,MSAP法與減成法相比製程成本高,因此有電路基板製造商之負擔大之問題。另外,形成微細配線時,有效的是減小銅箔之表面粗糙度,但另一方面,若減小銅箔之表面粗糙度,則有樹脂製基板與銅箔之密接性降低之虞。Therefore, recently, in order to form wiring with L&S of 30 µm/30 µm or less in high-density wiring boards, the introduction of the MSAP method (Modified Semi Additive Process) has been continuously promoted. However, the MSAP method has a higher process cost than the subtractive method, so there is a problem of a large burden on the circuit board manufacturer. In addition, when forming fine wiring, it is effective to reduce the surface roughness of the copper foil. On the other hand, if the surface roughness of the copper foil is reduced, the adhesion between the resin substrate and the copper foil may be reduced.

專利文獻1中揭示有藉由將極薄銅層之整體之平均結晶粒徑進行微細化而形成微細配線之技術,但若結晶粒徑過小,則有因側蝕(配線剖面之橫向蝕刻)之影響而無法獲得高蝕刻因數之虞。 另外,專利文獻2中揭示有與高耐熱性樹脂之密接性優異之銅箔,但有尖銳形狀之粗化粒子於蝕刻時容易溶解殘留(根部殘留),而微細配線加工性變得不充分之虞。Patent Literature 1 discloses a technique for forming fine wiring by miniaturizing the average crystal grain size of the entire ultra-thin copper layer, but if the crystal grain size is too small, there may be side corrosion (lateral etching of the wiring cross section). Therefore, it is impossible to obtain a high etching factor. In addition, Patent Document 2 discloses a copper foil having excellent adhesion to a high heat-resistant resin, but coarse particles with sharp shapes are easily dissolved and left during etching (residual roots), and the workability of fine wiring becomes insufficient Yu.

[先前技術文獻] (專利文獻) 專利文獻1:日本專利6158573號公報 專利文獻2:日本特開2010-236058號公報[Prior Technical Literature] (Patent Literature) Patent Document 1: Japanese Patent No. 6158573 Patent Document 2: Japanese Patent Laid-Open No. 2010-236058

[發明所欲解決的問題] 本發明之問題在於提供一種表面處理銅箔,其具有可利用製程成本優異之減成法形成L&S為例如30 µm/30 µm以下之微細配線的微細配線加工性,且與樹脂製基板之密接性優異。另外,本發明之問題一併在於提供一種具有如上所述之微細配線加工性之覆銅積層板、及具有高密度極微細配線之印刷線路板。[Problems to be solved by the invention] The problem of the present invention is to provide a surface-treated copper foil having a fine wiring processability that can form fine wiring with L&S of, for example, 30 µm/30 µm or less by a reduction method excellent in process cost, and has adhesion to a resin substrate Excellent. In addition, the problem of the present invention is to provide a copper-clad laminate having fine wiring processability as described above, and a printed wiring board having high-density extremely fine wiring.

[解決問題的技術手段] 本發明之一態樣之表面處理銅箔之主旨在於:其係於表面具有利用粗化處理形成之粗化面之表面處理銅箔,且箔厚為10 µm以下,粗化面之頂點曲率算術平均Ssc為0.7 µm-1 以上且3.8 µm-1 以下,在200℃下加熱2小時後藉由電子束背向散射繞射法解析剖面時,結晶粒徑為0.5 µm以上之結晶粒中,結晶粒徑為0.5 µm以上且未達1.0 µm之結晶粒之個數之比率R1為0.51以上且0.97以下,結晶粒徑為1.0 µm以上且未達3.0 µm之結晶粒之個數之比率R2為0.03以上且0.42以下,結晶粒徑為3.0 µm以上之結晶粒之個數之比率R3為0.07以下。[Technical Means for Solving the Problems] The main purpose of the surface-treated copper foil of one aspect of the present invention is that it is a surface-treated copper foil with a roughened surface formed by roughening treatment on the surface, and the foil thickness is 10 μm or less, The arithmetic mean Ssc of the vertex curvature of the roughened surface is 0.7 µm -1 or more and 3.8 µm -1 or less. After heating at 200°C for 2 hours, the crystal grain size is 0.5 µm when the profile is analyzed by the electron beam backscatter diffraction method Among the above crystal grains, the ratio R1 of the number of crystal grains having a crystal grain diameter of 0.5 µm or more and less than 1.0 µm is 0.51 or more and 0.97 or less, and those having a crystal grain diameter of 1.0 µm or more and less than 3.0 µm The ratio R2 of the number is 0.03 or more and 0.42 or less, and the ratio R3 of the number of crystal particles having a crystal grain size of 3.0 µm or more is 0.07 or less.

另外,本發明之另一態樣之覆銅積層板之主旨在於:具備上述一態樣之表面處理銅箔、及積層於該表面處理銅箔之粗化面之樹脂製基板。 進而,本發明之另一態樣之印刷線路板之主旨在於:具備上述另一態樣之覆銅積層板。In addition, the main aspect of the copper-clad laminate according to another aspect of the present invention is: a resin substrate provided with the surface-treated copper foil of the above aspect, and a roughened surface laminated on the surface-treated copper foil. Furthermore, the main purpose of the printed wiring board of another aspect of the present invention is to include the above-mentioned copper clad laminate of another aspect.

[發明的效果] 本發明之表面處理銅箔具有可利用製程成本優異之減成法形成L&S為例如30 µm/30 µm以下之微細配線的微細配線加工性,且與樹脂製基板之密接性優異。另外,本發明之覆銅積層板具有如上所述之微細配線加工性。進而,本發明之印刷線路板具有高密度極微細配線。[Effect of invention] The surface-treated copper foil of the present invention has fine wiring processability for forming fine wirings with L&S of, for example, 30 µm/30 µm or less by a reduction method excellent in process cost, and has excellent adhesion to a resin substrate. In addition, the copper-clad laminate of the present invention has the fine wiring processability as described above. Furthermore, the printed wiring board of the present invention has high-density extremely fine wiring.

對本發明之一實施形態進行說明。此外,以下所說明之實施形態表示本發明之一例,且本發明並不限定於本實施形態。另外,對本實施形態可施加各種變更或改良,此種施加了變更或改良之形態亦可包含於本發明。An embodiment of the present invention will be described. In addition, the embodiment described below shows an example of the present invention, and the present invention is not limited to this embodiment. In addition, various changes or improvements can be added to the present embodiment, and such changes or improvements can also be included in the present invention.

本發明者等人進行了努力研究,結果發現,對於銅箔之微細配線加工性,銅箔中之結晶粒徑為0.5 µm以上之結晶粒之分佈狀態之影響高。一般而言,已知於微細配線之蝕刻加工中,相較於結晶粒內於結晶粒之粒界優先地進行溶解。結晶粒界相當於面方位不同之結晶粒之交界,原子排列之失配、缺陷存在較多,因此處於能量活性之狀態,因此於蝕刻中容易溶解。因此,可認為銅箔中之結晶粒越微細,結晶粒界越增多,溶解速度越快。The inventors of the present invention conducted intensive studies, and as a result, it was found that the fine wiring processability of copper foil has a high influence on the distribution state of crystal grains having a crystal grain diameter of 0.5 µm or more in the copper foil. In general, it is known that in the etching process of fine wiring, it is preferentially dissolved in the grain boundaries of the crystal grains compared to the crystal grains. The crystal grain boundary is equivalent to the boundary of crystal grains with different plane orientations. There are many mismatches and defects in the arrangement of atoms, so it is in an energy-active state, so it is easily dissolved in etching. Therefore, it can be considered that the finer the crystal grains in the copper foil, the more the crystal grain boundaries increase, and the faster the dissolution rate.

調查影響銅箔之微細配線加工性提高之因素,結果可知,在200℃下加熱2小時後0.5 µm以上且未達1.0 µm之結晶粒徑之結晶粒處於固定比率時,蝕刻時之縱向之溶解速度加快而蝕刻因數上升。但是,另一方面,發現若該尺寸之結晶粒之比率過多,則反而配線圖案剖面之頂部側(以下,將圖案上部設為頂部,將圖案下部設為底部)之橫向之溶解優先地進行,蝕刻因數減小。The factors affecting the improvement of the processability of the fine wiring of the copper foil were investigated, and as a result, it was found that when heated at 200°C for 2 hours, the crystal grains with a crystal grain diameter of 0.5 µm or more and less than 1.0 µm were in a fixed ratio, and the longitudinal dissolution during etching The speed increases and the etching factor increases. However, on the other hand, it was found that if the ratio of crystal grains of this size is too large, on the contrary, the lateral dissolution of the top side of the wiring pattern cross section (hereinafter, the upper part of the pattern is the top and the lower part of the pattern is the bottom) is preferentially performed, The etch factor is reduced.

具體而言,在200℃下加熱2小時後藉由電子束背向散射繞射法解析剖面時,結晶粒徑為0.5 µm以上之結晶粒中,若結晶粒徑為0.5 µm以上且未達1.0 µm之結晶粒之個數之比率R1為0.51以上且0.97以下,則蝕刻因數增加。但是,若比率R1大於0.97,則頂部側之蝕刻優先地進行而微細配線加工性降低,若比率R1小於0.51,則銅箔之厚度方向之蝕刻速度變慢而微細配線加工降低。Specifically, when the profile is analyzed by electron beam backscatter diffraction after heating at 200°C for 2 hours, among crystal grains with a crystal grain size of 0.5 µm or more, if the crystal grain size is 0.5 µm or more and less than 1.0 The ratio R1 of the number of crystal grains of µm is 0.51 or more and 0.97 or less, the etching factor increases. However, if the ratio R1 is greater than 0.97, the etching on the top side is preferentially performed and the fine wiring processability is reduced. If the ratio R1 is less than 0.51, the etching speed in the thickness direction of the copper foil is slowed and the fine wiring process is reduced.

另外,若結晶粒徑成為3.0 µm以上之尺寸,則相對於結晶粒之體積而言粒界之面積較少而容易溶解殘留,因此因蝕刻速度之降低而導致配線圖案容易拖尾。具體而言,在200℃下加熱2小時後藉由電子束背向散射繞射法解析剖面時,結晶粒徑為0.5 µm以上之結晶粒中,結晶粒徑為3.0 µm以上之結晶粒之個數之比率R3為0或者超過0且0.07以下之範圍內,微細配線加工性提高,但若比率R3大於0.07,則尺寸大之結晶粒之溶解殘留之影響增加而微細配線加工性降低。In addition, if the crystal grain size is 3.0 µm or more, the area of the grain boundary is small relative to the volume of the crystal grains, and it is easy to dissolve and remain. Therefore, the wiring pattern is likely to be trailed due to the decrease in the etching rate. Specifically, when the profile is analyzed by electron beam backscatter diffraction after heating at 200°C for 2 hours, one of the crystal grains having a crystal grain size of 0.5 µm or more has a crystal grain size of 3.0 µm or more. When the ratio R3 of the number is 0 or more than 0 and within the range of 0.07 or less, the fine wiring processability is improved. However, if the ratio R3 is greater than 0.07, the influence of the dissolving residue of large-sized crystal grains increases and the fine wiring processability decreases.

詳細內容將於後文進行敘述,如上所述之結晶粒之分佈可藉由使於製造電解銅箔時對電解液所賦予之電流密度均勻化而進行控制。 進而,在調查有助於微細配線加工性之因素之過程中,發現銅箔之粗化粒子之脊部附近部分之曲率之算術平均(粗化面之頂點曲率算術平均)Ssc之影響強。具體而言,頂點曲率算術平均Ssc為0.7 µm-1 以上且3.8 µm-1 以下時,蝕刻因數增加。頂點曲率算術平均Ssc係各種山結構之平均山頂曲率,由下述式表示。下述式中,z(x,y)係x,y座標中之高度方向之座標,N係粗化粒子之頂點個數。The details will be described later. The distribution of the crystal grains as described above can be controlled by making the current density given to the electrolyte uniform during the manufacture of the electrolytic copper foil. Furthermore, in the course of investigating factors contributing to the processability of fine wiring, it was found that the arithmetic average of the curvature of the portion near the ridge of the roughened particles of the copper foil (the arithmetic average of the apex curvature of the roughened surface) Ssc has a strong influence. Specifically, when the arithmetic mean Ssc of vertex curvature is 0.7 µm -1 or more and 3.8 µm -1 or less, the etching factor increases. The vertex curvature arithmetic mean Ssc is the average peak curvature of various mountain structures and is expressed by the following formula. In the following formula, z(x, y) is the coordinate in the height direction of the x and y coordinates, and N is the number of vertices of the coarsened particles.

[式1]

Figure 02_image001
[Formula 1]
Figure 02_image001

於該範圍內存在頂點曲率算術平均Ssc時,銅箔之粗化面之粗化粒子之頂點之彎曲程度處於適度之狀態,因此可認為蝕刻時不產生根部殘留(粗化粒子之頂端溶解殘留之狀態)而容易溶解,銅箔之拖尾得到抑制而蝕刻因數上升。When the arithmetic mean Ssc of the apex curvatures exists within this range, the curvature of the apex of the roughened particles on the roughened surface of the copper foil is in a moderate state, so it is considered that no root residues will occur during etching (the top of the roughened particles will dissolve and remain) Condition) and easy to dissolve, the tailing of the copper foil is suppressed and the etching factor increases.

頂點曲率算術平均Ssc大於3.8 µm-1 時,粗化粒子之頂點之彎曲程度強,因此成為粗化粒子深深地刺入樹脂製基板之狀態而於蝕刻時產生根部殘留,銅箔之拖尾變長而蝕刻因數降低。頂點曲率算術平均Ssc小於0.7 µm-1 時,粗化粒子之頂點之彎曲程度平緩,因此粗化粒子對樹脂製基板之沒入程度差(投錨效應弱),樹脂製基板與銅箔之密接性降低。When the arithmetic mean Ssc of the apex curvature is greater than 3.8 µm -1 , the apex of the roughened particles is strongly bent, so the roughened particles penetrate deeply into the resin substrate, causing root residues during etching, and copper foil tailing It becomes longer and the etching factor decreases. When the arithmetic mean Ssc of the vertex curvature is less than 0.7 µm -1 , the vertices of the roughened particles have a gentle curvature, so the roughened particles have poor penetration into the resin substrate (weak anchor effect), and the adhesion between the resin substrate and the copper foil reduce.

詳細內容將於後文進行敘述,可藉由使粗化粒子之頂點溶解而使頂點曲率算術平均Ssc降低,因此若於脈衝鍍覆、粗化處理之後藉由將銅箔浸漬於硫酸銅水溶液之方法而使粗化粒子之頂點溶解,則可控制頂點曲率算術平均Ssc。The details will be described later. The vertex curvature arithmetic mean Ssc can be reduced by dissolving the vertices of the coarsened particles. Therefore, if the copper foil is immersed in an aqueous solution of copper sulfate after pulse plating and roughening Method to dissolve the vertex of the coarsened particles, the vertex curvature arithmetic mean Ssc can be controlled.

亦即,本發明之一實施形態之表面處理銅箔係於表面具有利用粗化處理形成之粗化面之表面處理銅箔,且箔厚為10 µm以下,粗化面之頂點曲率算術平均Ssc為0.7 µm-1 以上且3.8 µm-1 以下。並且,在200℃下加熱2小時後藉由電子束背向散射繞射法解析剖面時,結晶粒徑為0.5 µm以上之結晶粒中,結晶粒徑為0.5 µm以上且未達1.0 µm之結晶粒之個數之比率R1為0.51以上且0.97以下,結晶粒徑為1.0 µm以上且未達3.0 µm之結晶粒之個數之比率R2為0.03以上且0.42以下,結晶粒徑為3.0 µm以上之結晶粒之個數之比率R3為0.07以下。亦即,結晶粒徑為3.0 µm以上之結晶粒為任意成分,比率R3為0或超過0且0.07以下。That is, the surface-treated copper foil of one embodiment of the present invention is a surface-treated copper foil having a roughened surface formed by roughening on the surface, and the foil thickness is 10 µm or less, and the arithmetic mean of the vertex curvature of the roughened surface is Ssc It is 0.7 µm -1 or more and 3.8 µm -1 or less. In addition, when the profile was analyzed by electron beam backscatter diffraction after heating at 200°C for 2 hours, among crystal grains with a crystal grain size of 0.5 µm or more, crystal grains with a crystal grain size of 0.5 µm or more and less than 1.0 µm The ratio R1 of the number of particles is 0.51 or more and 0.97 or less, the ratio R2 of the number of crystal particles whose crystal grain size is 1.0 µm or more and less than 3.0 µm is 0.03 or more and 0.42 or less, and the crystal grain size is 3.0 µm or more The ratio R3 of the number of crystal grains is 0.07 or less. That is, crystal grains having a crystal grain diameter of 3.0 µm or more are arbitrary components, and the ratio R3 is 0 or more and 0.07 or less.

本發明之一實施形態之表面處理銅箔中,進而較佳為粗化面之頂點曲率算術平均Ssc為1.0 µm-1 以上且2.5 µm-1 以下。另外,較佳為在200℃下加熱2小時後藉由電子束背向散射繞射法解析剖面時,結晶粒徑為0.5 µm以上之結晶粒中,結晶粒徑為0.5 µm以上且未達1.0 µm之結晶粒之個數之比率R1為0.59以上且0.96以下,結晶粒徑為1.0 µm以上且未達3.0 µm之結晶粒之個數之比率R2為0.04以上且0.41以下,結晶粒徑為3.0 µm以上之結晶粒之個數之比率R3為0。In the surface-treated copper foil according to an embodiment of the present invention, it is further preferable that the arithmetic mean Ssc of the vertex curvature of the roughened surface is 1.0 µm -1 or more and 2.5 µm -1 or less. In addition, it is preferable to analyze the cross section by electron beam backscatter diffraction after heating at 200°C for 2 hours. Of the crystal grains having a crystal grain size of 0.5 µm or more, the crystal grain size is 0.5 µm or more and less than 1.0 The ratio R1 of the number of crystal particles of µm is 0.59 or more and 0.96 or less, the ratio R2 of the number of crystal particles of 1.0 µm or more and less than 3.0 µm is 0.04 or more and 0.41, and the crystal particle size is 3.0 The ratio R3 of the number of crystal grains above µm is 0.

上述之本實施形態之表面處理銅箔具有可利用製程成本優異之減成法形成L&S為例如30 µm/30 µm以下之微細配線的微細配線加工性,且與樹脂製基板之密接性優異。因此,本實施形態之表面處理銅箔可較佳地用於製造覆銅積層板、印刷線路板,可製造具有高密度極微細配線之印刷線路板。The surface-treated copper foil of the present embodiment described above has fine wiring processability for forming fine wirings with L&S of, for example, 30 µm/30 µm or less by a reduction method excellent in process cost, and has excellent adhesion to a resin substrate. Therefore, the surface-treated copper foil of this embodiment can be preferably used for manufacturing copper-clad laminates and printed wiring boards, and can produce printed wiring boards with high-density and extremely fine wiring.

本實施形態之表面處理銅箔中,箔厚為10 µm以下。若表面處理銅箔之箔厚超過10 µm,則有產生銅箔之溶解時間變長而蝕刻因數降低之不良情況之虞。 另外,本實施形態之表面處理銅箔中,粗化面之Rpm(粗糙度曲線之最大山高度之10點平均)亦可設為0.5 µm以上且3.5 µm以下。若粗化面之Rpm未達0.5 µm,則有產生與樹脂製基板之密接性降低之不良情況之虞。另一方面,若粗化面之Rpm超過3.5 µm,則有產生蝕刻因數降低之不良情況之虞。In the surface-treated copper foil of this embodiment, the foil thickness is 10 µm or less. If the thickness of the surface-treated copper foil exceeds 10 µm, there is a possibility that the dissolution time of the copper foil becomes longer and the etching factor decreases. In addition, in the surface-treated copper foil of this embodiment, the Rpm of the roughened surface (10-point average of the maximum mountain height of the roughness curve) may also be set to 0.5 µm or more and 3.5 µm or less. If the Rpm of the roughened surface is less than 0.5 µm, there is a possibility that the adhesiveness with the resin substrate may decrease. On the other hand, if the Rpm of the roughened surface exceeds 3.5 µm, there is a risk that the etching factor will decrease.

進而,本實施形態之表面處理銅箔中,常態下之拉伸強度亦可設為400 MPa以上且780 MPa以下,在220℃下加熱2小時後在常溫下測定之拉伸強度亦可設為300 MPa以上。 若常態下之拉伸強度為400 MPa以上且780 MPa以下,則表面處理銅箔之操作性及蝕刻性良好。另外,在220℃下加熱2小時後在常溫下測定之拉伸強度為300 MPa以上時,蝕刻性良好。Furthermore, in the surface-treated copper foil of this embodiment, the tensile strength under normal conditions may be set to 400 MPa or more and 780 MPa or less, and the tensile strength measured at normal temperature after heating at 220°C for 2 hours may also be set to 300 MPa or more. If the tensile strength under normal conditions is 400 MPa or more and 780 MPa or less, the operability and etching properties of the surface-treated copper foil are good. In addition, when the tensile strength measured at room temperature after heating at 220°C for 2 hours is 300 MPa or more, the etching property is good.

此外,本發明中,所謂「結晶粒徑」,係指圓當量直徑。另外,本發明中,所謂「常態」,係指表面處理銅箔未經過熱處理等熱歷程,放置於常溫(亦即,約25℃)下之狀態。常態下之拉伸強度可藉由依據IPC-TM-650之方法在常溫下進行測定。另外,加熱後之拉伸強度可將表面處理銅箔加熱至220℃並保持2小時後,自然冷卻至室溫,在常溫下藉由與常態下之拉伸強度相同之方法進行測定。In addition, in the present invention, the "crystal grain size" refers to a circle-equivalent diameter. In addition, in the present invention, the “normal state” refers to a state where the surface-treated copper foil is left at normal temperature (that is, about 25° C.) without undergoing thermal history such as heat treatment. The tensile strength under normal conditions can be measured at room temperature by the method according to IPC-TM-650. In addition, the tensile strength after heating can be measured by heating the surface-treated copper foil to 220°C for 2 hours and then naturally cooling to room temperature at room temperature by the same method as the tensile strength under normal conditions.

以下,對本實施形態之表面處理銅箔更詳細地進行說明。首先,對表面處理銅箔之製造方法進行說明。 (1)關於電解銅箔之製造方法 電解銅箔例如可使用如圖1所示之電解析出裝置進行製造。圖1之電解析出裝置具備:不溶性陽極104,其包含被覆有鉑族元素或其氧化物之鈦;鈦製陰極鼓102,其與不溶性陽極104對向而設置;及拋光輪103,其對陰極鼓102進行研磨而去除產生於陰極鼓102之表面之氧化膜。Hereinafter, the surface-treated copper foil of this embodiment will be described in more detail. First, the method of manufacturing the surface-treated copper foil will be described. (1) About the manufacturing method of electrolytic copper foil The electrolytic copper foil can be manufactured using, for example, the electrolysis device shown in FIG. 1. The electrolysis device of FIG. 1 includes: an insoluble anode 104 containing titanium coated with platinum group elements or their oxides; a cathode drum 102 made of titanium, which is opposed to the insoluble anode 104; and a polishing wheel 103, which is opposite The cathode drum 102 is ground to remove the oxide film generated on the surface of the cathode drum 102.

於陰極鼓102與不溶性陽極104之間供給電解液105(硫酸-硫酸銅水溶液),一面使陰極鼓102以固定速度旋轉,一面於陰極鼓102與不溶性陽極104之間接通直流電流。藉此,銅析出至陰極鼓102之表面上。將所析出之銅自陰極鼓102之表面剝離,連續地進行捲取,藉此獲得電解銅箔101。An electrolyte 105 (a sulfuric acid-copper sulfate aqueous solution) is supplied between the cathode drum 102 and the insoluble anode 104, and while the cathode drum 102 is rotated at a fixed speed, a direct current is connected between the cathode drum 102 and the insoluble anode 104. With this, copper is precipitated onto the surface of the cathode drum 102. The deposited copper was peeled from the surface of the cathode drum 102 and coiled continuously to obtain an electrolytic copper foil 101.

本發明者等人進行了努力研究,結果發現,相對於藉由泵攪拌電解液之先前方法,藉由使電解液105產生強亂流之方法,使陰極鼓102與不溶性陽極104之間的電流密度較一般電解製箔更均勻化,從而可控制銅箔之結晶粒之分佈。作為使電解液105產生強亂流之方法之一例,可列舉空氣等氣體之通入。若於電解析出裝置設置氣體之通入裝置,一面調整流量一面對電解液105供給氣體而使電解液105起泡,則於電解液105中氣泡無規地運動而產生強亂流。The inventors of the present invention conducted intensive studies and found that the current between the cathode drum 102 and the insoluble anode 104 is caused by the method of generating a strong turbulent flow of the electrolyte 105 compared to the previous method of stirring the electrolyte by the pump The density is more uniform than that of general electrolytic foils, so that the distribution of crystal grains of copper foil can be controlled. As an example of a method for generating a strong turbulent flow of the electrolyte 105, the introduction of gas such as air can be cited. If a gas inlet device is provided in the electrolysis device, the gas is supplied to the electrolyte 105 while the flow rate is adjusted to make the electrolyte 105 bubbly, then the bubbles move randomly in the electrolyte 105 to generate a strong turbulent flow.

具體而言,若將氣體之流量設為2 L/min以上且8 L/min以下,則可使電流密度均勻化,容易獲得在200℃下加熱2小時後藉由電子束背向散射繞射法解析剖面時的結晶粒之分佈與前述之本實施形態之表面處理銅箔相同之電解銅箔。若氣體之流量未達2 L/min,則局部產生電流密度低之區域,容易形成粗大之結晶粒,因此有蝕刻因數降低之虞。另一方面,若氣體之流量超過8 L/min,則比率R1變大而側蝕成為優勢,因此有蝕刻因數降低之虞。Specifically, if the flow rate of the gas is set to 2 L/min or more and 8 L/min or less, the current density can be made uniform, and it is easy to obtain diffraction by electron beam back scattering after heating at 200°C for 2 hours The distribution of crystal grains in the cross-sectional analysis by the method is the same as the electrolytic copper foil of the surface-treated copper foil of the present embodiment described above. If the flow rate of the gas is less than 2 L/min, a region with a low current density is generated locally, and coarse crystal grains are easily formed, so there is a possibility that the etching factor may decrease. On the other hand, if the flow rate of the gas exceeds 8 L/min, the ratio R1 becomes larger and side erosion becomes an advantage, so the etching factor may be reduced.

另外,作為另一實施形態,亦可於不溶性陽極之表面形成連續之凹凸。於凹凸之附近,電解液之流速慢,另一方面,於不溶性陽極與陰極之中間,電解液之流速變快,產生速度差。發現會因該速度差而產生強亂流,相較於先前之電解製箔而言電流密度分佈更均勻化,從而可控制銅箔之結晶粒之分佈。In addition, as another embodiment, continuous irregularities may be formed on the surface of the insoluble anode. Near the irregularities, the flow rate of the electrolyte is slow. On the other hand, between the insoluble anode and the cathode, the flow rate of the electrolyte becomes faster, resulting in a speed difference. It was found that due to this speed difference, a strong turbulent flow is generated, and the current density distribution is more uniform compared to the previous electrolytic foil making, so that the distribution of the crystal grains of the copper foil can be controlled.

具體而言,沿著陽極之圓周方向空出60 mm之間隔而連續地形成高度為0.5 mm至1.5 mm、寬度為10 mm至70 mm之凸部,藉此產生亂流,容易獲得在200℃下加熱2小時後藉由電子束背向散射繞射法解析剖面時的結晶粒之分佈與前述之本實施形態之表面處理銅箔相同之電解銅箔。Specifically, a convex portion having a height of 0.5 mm to 1.5 mm and a width of 10 mm to 70 mm is continuously formed along the circumferential direction of the anode with a space of 60 mm, thereby generating turbulent flow, which is easily obtained at 200°C After the heating for 2 hours, the distribution of the crystal grains when analyzing the cross section by the electron beam backscatter diffraction method is the same as the aforementioned electrolytic copper foil of the surface-treated copper foil of the present embodiment.

製造電解銅箔時,亦可於電解液105中添加添加劑。添加劑之種類並無特別限定,可列舉:伸乙硫脲、聚乙二醇、四甲基硫脲、聚丙烯醯胺等。此處,藉由增加伸乙硫脲、四甲基硫脲之添加量,可提高常態下之拉伸強度及在220℃下加熱2小時後在常溫下測定之拉伸強度。When manufacturing an electrolytic copper foil, additives may be added to the electrolytic solution 105. The type of additive is not particularly limited, and examples include thiosemicarbazide, polyethylene glycol, tetramethylthiourea, and polypropylene amide. Here, by increasing the amount of thiourea and tetramethylthiourea, the tensile strength under normal conditions and the tensile strength measured at room temperature after heating at 220°C for 2 hours can be increased.

若常態下之拉伸強度為400 MPa以上且780 MPa以下,則表面處理銅箔之操作性及蝕刻性良好。若常態下之拉伸強度未達400 MPa,則由於表面處理銅箔為薄箔片品,因此有於搬送時產生褶皺而操作性變差之虞。另一方面,若常態下之拉伸強度大於780 MPa,則有於使用電解析出裝置製造銅箔時,析出至鼓之銅箔容易發生箔斷裂而不適於製造之虞。If the tensile strength under normal conditions is 400 MPa or more and 780 MPa or less, the operability and etching properties of the surface-treated copper foil are good. If the tensile strength under normal conditions is less than 400 MPa, the surface-treated copper foil is a thin foil product, so wrinkles may occur during transportation and the handling may deteriorate. On the other hand, if the tensile strength under normal conditions is greater than 780 MPa, when the copper foil is produced using an electrolysis device, the copper foil that has precipitated to the drum is likely to break the foil and is not suitable for manufacturing.

另外,在220℃下加熱2小時後在常溫下測定之拉伸強度為300 MPa以上時,於將表面處理銅箔與樹脂製基板積層而製造覆銅積層板之步驟中加熱後,結晶粒亦細而蝕刻性良好。若在220℃下加熱2小時後在常溫下測定之拉伸強度未達300 MPa,則會因將表面處理銅箔與樹脂製基板積層而製造覆銅積層板之步驟中之加熱導致結晶粒變大而於蝕刻中不易溶解,因此有蝕刻性降低之虞。In addition, when the tensile strength measured at room temperature after heating at 220°C for 2 hours is 300 MPa or more, the crystal grains are also heated after the step of manufacturing the copper-clad laminate by laminating the surface-treated copper foil and the resin substrate. Fine and etchable. If the tensile strength measured at room temperature after heating at 220°C for 2 hours does not reach 300 MPa, the crystal grains will change due to the heating in the step of manufacturing the copper-clad laminate by laminating the surface-treated copper foil and the resin substrate It is too large and hardly dissolves in etching, so there is a possibility that the etching property is lowered.

此外,電解液105中,亦可添加鉬。藉由添加鉬,可提高銅箔之蝕刻性。通常,電解析出中,電解液105之銅濃度(硫酸銅中未考慮硫酸成分之僅銅之濃度)為13 g/L至72 g/L,電解液105之硫酸濃度為26 g/L至133 g/L,電解液105之液溫為18℃至67℃,電流密度為3 A/dm2 至67 A/dm2 ,處理時間為1秒以上且1分55秒以下。In addition, molybdenum may be added to the electrolytic solution 105. By adding molybdenum, the etching property of copper foil can be improved. Generally, in electrolysis, the copper concentration of the electrolyte 105 (the concentration of copper only in the sulfuric acid component of the copper sulfate) is 13 g/L to 72 g/L, and the sulfuric acid concentration of the electrolyte 105 is 26 g/L to 133 g/L, the liquid temperature of the electrolyte 105 is 18°C to 67°C, the current density is 3 A/dm 2 to 67 A/dm 2 , and the processing time is 1 second or more and 1 minute 55 seconds or less.

(2)關於電解銅箔之表面處理 >粗化處理> 已知以提高與樹脂製基板之密接性為目的,對電解銅箔之表面實施粗化處理而製成粗化面,但一般而言若為密接性高之粗化處理,則於蝕刻時容易產生根部殘留,蝕刻因數容易降低。本發明者等人進行了努力研究,結果發現,藉由使粗化粒子之頂點略微溶解而頂點之彎曲程度之強度降低(粗化面之頂點曲率算術平均Ssc降低),於蝕刻時不易產生根部殘留而蝕刻因數提高。 使粗化粒子之頂點溶解之方法並無特別限定,可列舉:藉由使用適度之逆電流之脈衝鍍覆使之溶解之方法、於粗化處理之後將銅箔浸漬於硫酸銅水溶液而優先使頂端溶解之方法。(2) About the surface treatment of electrolytic copper foil >Roughening> It is known that the surface of the electrolytic copper foil is roughened for the purpose of improving the adhesion to the resin substrate to form a roughened surface. However, in general, a roughening treatment with high adhesion is easy during etching. The roots remain, and the etching factor is easily reduced. The inventors of the present invention conducted intensive studies, and found that by slightly dissolving the vertices of the roughened particles, the strength of the vertices' bending degree is reduced (the arithmetic mean Ssc of the vertices of the roughened surface is reduced), and it is not easy to produce roots during etching The etching factor is increased while remaining. The method of dissolving the apexes of the roughened particles is not particularly limited, and examples thereof include: a method of dissolving by pulse plating using a moderate reverse current, and immersing the copper foil in an aqueous solution of copper sulfate after roughening, preferably The method of dissolving the top.

另外,發現若粗化面之頂點曲率算術平均Ssc為0.7 µm-1 以上且3.8 µm-1 以下,且在200℃下加熱2小時後藉由電子束背向散射繞射法解析剖面時的結晶粒之分佈如上所述(亦即,在200℃下加熱2小時後藉由電子束背向散射繞射法解析剖面時,結晶粒徑為0.5 µm以上之結晶粒中,結晶粒徑為0.5 µm以上且未達1.0 µm之結晶粒之個數之比率R1為0.51以上且0.97以下,結晶粒徑為1.0 µm以上且未達3.0 µm之結晶粒之個數之比率R2為0.03以上且0.42以下,結晶粒徑為3.0 µm以上之結晶粒之個數之比率R3為0,或者在200℃下加熱2小時後藉由電子束背向散射繞射法解析剖面時,結晶粒徑為0.5 µm以上之結晶粒中,結晶粒徑為0.5 µm以上且未達1.0 µm之結晶粒之個數之比率R1為0.51以上且0.97以下,結晶粒徑為1.0 µm以上且未達3.0 µm之結晶粒之個數之比率R2為0.03以上且0.42以下,結晶粒徑為3.0 µm以上之結晶粒之個數之比率R3為超過0且0.07以下),則銅箔之蝕刻因數特異性地上升。In addition, it was found that if the arithmetic mean Ssc of the vertex curvature of the roughened surface is 0.7 µm -1 or more and 3.8 µm -1 or less, and after heating at 200°C for 2 hours, the crystal is analyzed by electron beam backscatter diffraction method The distribution of the particles is as described above (that is, when the profile is analyzed by electron beam backscatter diffraction after heating at 200°C for 2 hours, the crystal particle size of the crystal particles with a crystal particle size of 0.5 µm or more is 0.5 µm The ratio R1 of the number of crystal grains above and less than 1.0 µm is 0.51 or more and 0.97, and the ratio R2 of the number of crystal grains whose crystal grain size is 1.0 µm or more and less than 3.0 µm is 0.03 or more and 0.42 or less, The ratio R3 of the number of crystal grains with a crystal grain size of 3.0 µm or more is 0, or when the cross section is analyzed by electron beam backscatter diffraction after heating at 200°C for 2 hours, the crystal grain size is 0.5 µm or more Among the crystal grains, the ratio R1 of the number of crystal grains having a crystal grain diameter of 0.5 µm or more and less than 1.0 µm is 0.51 or more and 0.97 or less, and the number of crystal grains having a crystal grain diameter of 1.0 µm or more and less than 3.0 µm When the ratio R2 is 0.03 or more and 0.42 or less, and the ratio R3 of the number of crystal grains with a crystal particle size of 3.0 µm or more is more than 0 and 0.07 or less), the etching factor of the copper foil increases specifically.

可認為這是由銅箔中之縱向(自配線之頂部側朝向底部側之方向)之溶解速度與粗化面中之溶解速度(橫向、亦即配線之寬度方向)之平衡良好所帶來之效果。例如,粗化面之溶解速度(橫向之溶解)較銅箔之溶解速度(縱向之溶解)快時,會產生底切(under cut)(於橫向上粗化面之溶解較銅箔進行得多之狀態)之問題。It can be considered that this is caused by a good balance between the dissolution rate in the longitudinal direction (direction from the top side of the wiring toward the bottom side) in the copper foil and the dissolution rate in the roughened surface (lateral direction, that is, the width direction of the wiring) effect. For example, when the dissolution rate of the roughened surface (the dissolution in the horizontal direction) is faster than the dissolution speed of the copper foil (the dissolution in the vertical direction), an under cut will occur (the dissolution of the roughened surface in the horizontal direction is much more advanced than the copper foil Problem).

>鎳層、鋅層、鉻酸鹽處理層之形成> 本實施形態之表面處理銅箔中,亦可於藉由粗化處理形成之粗化面上,進而依序形成鎳層、鋅層。 鋅層發揮如下之作用,亦即,將表面處理銅箔與樹脂製基板進行熱壓接時,防止因表面處理銅箔與樹脂製基板之反應所致之樹脂製基板之劣化、表面處理銅箔之表面氧化而提高表面處理銅箔與樹脂製基板之密接性。另外,鎳層防止於將表面處理銅箔與樹脂製基板進行熱壓接時,鋅層之鋅向表面處理銅箔中熱擴散。亦即,鎳層發揮用以使鋅層之上述功能有效地發揮的作為鋅層之基底層之作用。>Formation of nickel layer, zinc layer, chromate treatment layer> In the surface-treated copper foil of this embodiment, a nickel layer and a zinc layer may be sequentially formed on the roughened surface formed by roughening treatment. The zinc layer plays the role of preventing the deterioration of the resin substrate caused by the reaction of the surface-treated copper foil and the resin-made substrate when the surface-treated copper foil and the resin-made substrate are thermocompression-bonded, and the surface-treated copper foil The surface is oxidized to improve the adhesion between the surface-treated copper foil and the resin substrate. In addition, the nickel layer prevents the zinc of the zinc layer from thermally diffusing into the surface-treated copper foil when the surface-treated copper foil and the resin-made substrate are thermocompression-bonded. That is, the nickel layer functions as a base layer of the zinc layer to effectively exert the above-mentioned functions of the zinc layer.

再者,該等鎳層、鋅層可應用眾所周知之電解鍍覆法、無電解鍍覆法而形成。另外,該鎳層可由純鎳形成,亦可由含磷鎳合金形成。 另外,若於鋅層上進而進行鉻酸鹽處理,則於表面處理銅箔之表面形成抗氧化層,因此較佳。作為所應用之鉻酸鹽處理,依據眾所周知之方法即可,例如可列舉日本特開昭60-86894號公報中所揭示之方法。藉由使換算為鉻量為0.01 mg/dm2 至0.3 mg/dm2 左右之鉻氧化物及其水合物等附著,可對表面處理銅箔賦予優異之抗氧化功能。Furthermore, the nickel layer and the zinc layer can be formed by a well-known electrolytic plating method or electroless plating method. In addition, the nickel layer may be formed of pure nickel, or may be formed of a phosphorus-containing nickel alloy. In addition, if chromate treatment is further performed on the zinc layer, it is preferable to form an antioxidant layer on the surface of the surface-treated copper foil. The applied chromate treatment may be based on a well-known method, and for example, the method disclosed in Japanese Patent Laid-Open No. 60-86894 can be cited. By attaching chromium oxides and their hydrates converted into chromium in an amount of about 0.01 mg/dm 2 to about 0.3 mg/dm 2 , the surface-treated copper foil can be given an excellent antioxidant function.

>矽烷處理> 亦可對經鉻酸鹽處理之表面,進而進行使用矽烷偶合劑之表面處理(矽烷處理)。藉由使用矽烷偶合劑之表面處理,會對表面處理銅箔之表面(與樹脂製基板之接合側之表面)賦予與接著劑之親和力強之官能基,因此表面處理銅箔與樹脂製基板之密接性進一步提高,且進一步提高表面處理銅箔之防銹性、吸濕耐熱性。>Silane treatment> The surface treated with chromate can be further treated with silane coupling agent (silane treatment). The surface treatment using a silane coupling agent imparts a functional group with a strong affinity to the adhesive to the surface of the surface-treated copper foil (the surface on the bonding side with the resin-made substrate), so the surface-treated copper foil and the resin-made substrate The adhesion is further improved, and the rust resistance and moisture absorption heat resistance of the surface treated copper foil are further improved.

矽烷偶合劑之種類並無特別限定,可列舉出乙烯系矽烷、環氧系矽烷、苯乙烯系矽烷、甲基丙烯酸系矽烷、丙烯酸系矽烷、胺基系矽烷、脲基系矽烷、氯丙基系矽烷、巰基系矽烷、硫化物系矽烷、異氰酸酯系矽烷等。該等矽烷偶合劑通常製成0.001質量%以上且5質量%以下之濃度之水溶液而使用。將該水溶液塗佈於表面處理銅箔之表面之後進行加熱乾燥,藉此可進行矽烷處理。再者,代替矽烷偶合劑,使用鈦酸酯系、鋯酸酯系等偶合劑,亦可獲得同樣之效果。The type of silane coupling agent is not particularly limited, and examples thereof include vinyl silane, epoxy silane, styrene silane, methacrylic silane, acrylic silane, amino silane, urea silane, and chloropropyl Silane, mercapto silane, sulfide silane, isocyanate silane, etc. These silane coupling agents are usually used as aqueous solutions having a concentration of 0.001% by mass or more and 5% by mass or less. After applying this aqueous solution to the surface of the surface-treated copper foil and heating and drying, the silane treatment can be performed. Furthermore, instead of the silane coupling agent, a titanate-based, zirconate-based coupling agent or the like can be used to obtain the same effect.

(3)關於覆銅積層板、印刷線路板之製造方法 首先,於由玻璃環氧樹脂、聚醯亞胺樹脂等所構成之電絕緣性之樹脂製基板之一表面或兩表面,重疊放置表面處理銅箔。此時,使表面處理銅箔之粗化面與樹脂製基板對向。然後,一面將重疊之樹脂製基板及表面處理銅箔進行加熱,一面施加積層方向之壓力,而使樹脂製基板及表面處理銅箔接合,如此獲得附載體或無載體之覆銅積層板。本實施形態之表面處理銅箔因為常態及加熱後之拉伸強度高,所以即便無載體,亦可充分應對。(3) About the manufacturing method of copper clad laminate and printed circuit board First, surface-treated copper foil is placed on one or both surfaces of an electrically insulating resin substrate made of glass epoxy resin, polyimide resin, or the like. At this time, the roughened surface of the surface-treated copper foil was opposed to the resin substrate. Then, while heating the superposed resin substrate and surface-treated copper foil, while applying pressure in the direction of lamination, the resin substrate and the surface-treated copper foil are joined to obtain a copper-clad laminate with or without a carrier. Since the surface-treated copper foil of this embodiment has a high tensile strength under normal conditions and after heating, it can be adequately handled even without a carrier.

接下來,對覆銅積層板之銅箔表面照射CO2 氣體雷射而進行開孔。亦即,對銅箔之形成有雷射吸收層之面照射CO2 氣體雷射,而進行形成貫通表面處理銅箔及樹脂製基板之貫通孔之開孔加工。然後,藉由常規方法於表面處理銅箔形成高密度配線電路等電路,如此可獲得印刷線路板。Next, the surface of the copper foil of the copper-clad laminate is irradiated with CO 2 gas laser to make holes. That is, the surface of the copper foil on which the laser absorption layer is formed is irradiated with CO 2 gas laser to form a through-hole process that forms a through hole penetrating the surface-treated copper foil and the resin substrate. Then, a circuit such as a high-density wiring circuit is formed on the surface-treated copper foil by a conventional method, so that a printed wiring board can be obtained.

[實施例] 以下,表示實施例及比較例,更具體地說明本發明。 (A)電解銅箔之製造 使用圖1所示之電解析出裝置,將硫酸-硫酸銅水溶液作為電解液,藉由如以下之操作製造電解銅箔。亦即,藉由於陽極及與該陽極對向設置之陰極鼓之間供給電解液,一邊對電解液中通入空氣並以固定速度旋轉陰極鼓,一邊於陽極與陰極鼓之間接通直流電流,從而使銅析出至陰極鼓表面上。然後,將所析出之銅自陰極鼓之表面剝離,連續地捲取,藉此製造電解銅箔。[Example] Hereinafter, Examples and Comparative Examples are shown, and the present invention will be described more specifically. (A) Manufacture of electrolytic copper foil Using the electrolysis device shown in FIG. 1 and using a sulfuric acid-copper sulfate aqueous solution as an electrolytic solution, an electrolytic copper foil was manufactured by the following operation. That is, by supplying the electrolyte between the anode and the cathode drum opposite to the anode, while passing air into the electrolyte and rotating the cathode drum at a fixed speed, a direct current is connected between the anode and the cathode drum. Thus, copper is precipitated onto the surface of the cathode drum. Then, the precipitated copper was peeled from the surface of the cathode drum and continuously wound up, thereby manufacturing an electrolytic copper foil.

電解液中之銅濃度、硫酸濃度、氯濃度如表1所示。實施例1至實施例14及比較例1至比較例5中之一部分中,如表1所示,於電解液中添加作為添加劑之伸乙硫脲、聚乙二醇、四甲基硫脲、及膠(分子量20000)中之2種,該等添加劑之濃度如表1所示。另外,製造電解銅箔時之電解液之溫度、電流密度、空氣之通入流量如表1所示。進而,實施例13、實施例14中,沿著陽極之圓周方向空出60 mm之間隔而連續地形成高度為1.0 mm、寬度為60 mm之凸部。The copper concentration, sulfuric acid concentration, and chlorine concentration in the electrolyte are shown in Table 1. In one part of Example 1 to Example 14 and Comparative Example 1 to Comparative Example 5, as shown in Table 1, ethidium thiourea, polyethylene glycol, tetramethylthiourea, And two kinds of glue (molecular weight 20000), the concentration of these additives is shown in Table 1. In addition, the temperature, current density, and air flow rate of the electrolyte when manufacturing the electrolytic copper foil are shown in Table 1. Furthermore, in Examples 13 and 14, convex portions having a height of 1.0 mm and a width of 60 mm were continuously formed at intervals of 60 mm along the circumferential direction of the anode.

[表1]

Figure 108114061-A0304-0001
[Table 1]
Figure 108114061-A0304-0001

(B)粗化處理 接下來,對電解銅箔之S面或M面(參照表2)實施將表面製成粗化面之粗化處理,製造表面處理銅箔。具體而言,實施使微細之銅粒子電沈積至電解銅箔之表面之電鍍(脈衝鍍覆)作為粗化處理,藉此製成由銅粒子形成有微細凹凸之粗化面。用於電鍍之鍍覆液含有銅、硫酸、鉬、鎳,銅濃度、硫酸濃度、鉬濃度、鎳濃度如表2所示。(B) Coarse processing Next, the S surface or the M surface of the electrolytic copper foil (refer to Table 2) is subjected to a roughening treatment to make the surface roughened to produce a surface-treated copper foil. Specifically, electroplating (pulse plating) that electrodeposits fine copper particles onto the surface of an electrolytic copper foil is performed as a roughening process, thereby producing a roughened surface formed with fine irregularities from copper particles. The plating solution used for electroplating contains copper, sulfuric acid, molybdenum, and nickel. The copper concentration, sulfuric acid concentration, molybdenum concentration, and nickel concentration are shown in Table 2.

另外,粗化處理、亦即脈衝鍍覆之條件(實施有粗化處理之面(處理面)、電解條件、鍍覆處理時間、鍍覆液之溫度)示於表2。於表2中之電解條件下,Ion1表示第1階段之脈衝電流密度,Ion2表示第2階段之脈衝電流密度,ton1表示第1階段之脈衝電流施加時間,ton2表示第2階段之脈衝電流施加時間,toff表示將第2階段之脈衝電流與第1階段之脈衝電流之間之電流設為0之時間。In addition, the conditions of the roughening treatment, that is, pulse plating (surface to be roughened (treatment surface), electrolytic conditions, plating treatment time, temperature of plating solution) are shown in Table 2. Under the electrolysis conditions in Table 2, Ion1 represents the pulse current density of the first stage, Ion2 represents the pulse current density of the second stage, ton1 represents the pulse current application time of the first stage, ton2 represents the pulse current application time of the second stage , Toff represents the time when the current between the pulse current of the second stage and the pulse current of the first stage is set to 0.

此外,關於實施例11、實施例12及比較例1,實施通常之電鍍,而並非脈衝鍍覆。表2中之電解條件下,I係實施例11、實施例12及比較例1中所實施之電鍍之電流密度。 進而,關於實施例11、實施例12,將所獲得之表面處理銅箔進而浸漬於硫酸銅浴(硫酸銅水溶液),藉此使形成於電解銅箔之表面之微細之凸部之頂點溶解而變圓,調整粗化面之頂點曲率算術平均Ssc。硫酸銅浴之銅濃度、硫酸濃度、浸漬時間如表2所示。In addition, regarding Example 11, Example 12, and Comparative Example 1, normal plating was performed instead of pulse plating. Under the electrolysis conditions in Table 2, I is the current density of the plating performed in Example 11, Example 12, and Comparative Example 1. Furthermore, regarding Examples 11 and 12, the obtained surface-treated copper foil was further immersed in a copper sulfate bath (copper sulfate aqueous solution) to dissolve the apexes of fine convex portions formed on the surface of the electrolytic copper foil Round, adjust the arithmetic mean Ssc of the vertex curvature of the roughened surface. The copper concentration, sulfuric acid concentration, and immersion time of the copper sulfate bath are shown in Table 2.

[表2]

Figure 108114061-A0304-0002
[Table 2]
Figure 108114061-A0304-0002

(C)鎳層(基底層)之形成 接下來,對表面處理銅箔之粗化面於下述所示之Ni鍍覆條件下進行電解鍍覆,藉此形成鎳層(Ni之附著量0.06 mg/dm2 )。用於鎳鍍覆之鍍覆液含有硫酸鎳、過硫酸銨((NH4 )2 S2 O8 )、硼酸(H3 BO3 ),鎳濃度為5.0 g/L,過硫酸銨濃度為40.0 g/L,硼酸濃度為28.5 g/L。另外,鍍覆液之溫度為28.5℃,pH為3.8,電流密度為1.5 A/dm2 ,鍍覆處理時間為1秒至2分鐘。(C) Formation of nickel layer (underlayer) Next, the roughened surface of the surface-treated copper foil is electrolytically plated under the Ni plating conditions shown below, thereby forming a nickel layer (the adhesion amount of Ni is 0.06 mg/dm 2 ). The plating solution for nickel plating contains nickel sulfate, ammonium persulfate ((NH 4 ) 2 S 2 O 8 ), boric acid (H 3 BO 3 ), the nickel concentration is 5.0 g/L, and the ammonium persulfate concentration is 40.0 g/L, boric acid concentration is 28.5 g/L. In addition, the temperature of the plating solution is 28.5°C, the pH is 3.8, the current density is 1.5 A/dm 2 , and the plating treatment time is 1 second to 2 minutes.

(D)鋅層(耐熱處理層)之形成 進而,於鎳層上於下述所示之Zn鍍覆條件下進行電解鍍覆,藉此形成鋅層(Zn之附著量0.05 mg/dm2 )。用於鋅鍍覆之鍍覆液含有硫酸鋅七水合物、氫氧化鈉,鋅濃度為1 g/L至30 g/L,氫氧化鈉濃度為10 g/L至300 g/L。另外,鍍覆液之溫度為5℃至60℃,電流密度為0.1 A/dm2 至10 A/dm2 ,鍍覆處理時間為1秒至2分鐘。(D) Formation of zinc layer (heat-resistant treatment layer) Furthermore, electrolytic plating is performed on the nickel layer under the Zn plating conditions shown below, thereby forming a zinc layer (Zn adhesion amount 0.05 mg/dm 2 ) . The plating solution used for zinc plating contains zinc sulfate heptahydrate and sodium hydroxide. The zinc concentration is 1 g/L to 30 g/L, and the sodium hydroxide concentration is 10 g/L to 300 g/L. In addition, the temperature of the plating solution is 5°C to 60°C, the current density is 0.1 A/dm 2 to 10 A/dm 2 , and the plating treatment time is 1 second to 2 minutes.

(E)鉻酸鹽處理層(防銹處理層)之形成 進而,於鋅層上於下述所示之Cr鍍覆條件下進行電解鍍覆,藉此形成鉻酸鹽處理層(Cr之附著量0.02 mg/dm2 )。用於鉻鍍覆之鍍覆液含有鉻酸酐(CrO3 ),鉻濃度為2.5 g/L。另外,鍍覆液之溫度為15℃至45℃,pH為2.5,電流密度為0.5 A/dm2 ,鍍覆處理時間為1秒至2分鐘。(E) Formation of chromate treatment layer (rust-preventive treatment layer) Furthermore, electrolytic plating is performed on the zinc layer under the Cr plating conditions shown below, thereby forming a chromate treatment layer (adhesion of Cr Amount 0.02 mg/dm 2 ). The plating solution used for chromium plating contains chromic anhydride (CrO 3 ) with a chromium concentration of 2.5 g/L. In addition, the temperature of the plating solution is 15°C to 45°C, the pH is 2.5, the current density is 0.5 A/dm 2 , and the plating treatment time is 1 second to 2 minutes.

(F)矽烷偶合劑層之形成 進而,進行下述所示之處理,於鉻酸鹽處理層上形成矽烷偶合劑層。亦即,於矽烷偶合劑水溶液中添加甲醇或乙醇,調整為預定之pH,獲得處理液。將該處理液塗佈於表面處理銅箔之鉻酸鹽處理層,保持預定時間後,利用熱風進行乾燥,藉此形成矽烷偶合劑層。(F) Formation of silane coupling agent layer Furthermore, the treatment shown below is performed to form a silane coupling agent layer on the chromate treatment layer. That is, methanol or ethanol is added to the aqueous solution of the silane coupling agent, adjusted to a predetermined pH, and a treatment liquid is obtained. The chromate treatment layer of the surface-treated copper foil is coated with this treatment liquid, and after holding for a predetermined time, it is dried by hot air, thereby forming a silane coupling agent layer.

(G)評價 如上所述,分別製造實施例1至實施例14及比較例1至比較例5之表面處理銅箔。該等表面處理銅箔之箔厚如表3所記載。針對所獲得之各表面處理銅箔,進行各種評價。(G) Evaluation As described above, the surface-treated copper foils of Examples 1 to 14 and Comparative Examples 1 to 5 were manufactured, respectively. The thickness of these surface-treated copper foils is shown in Table 3. Various evaluations were performed for each surface-treated copper foil obtained.

>拉伸強度> 將以上述方式獲得之實施例1至實施例14及比較例1至比較例5之表面處理銅箔,切成寬度12.7 mm、長度130 mm之短條狀,作為拉伸試片。藉由依據IPC-TM-650之方法,測定常態下之拉伸試片之拉伸強度。作為測定裝置,使用Instron公司之1122型拉伸試驗機,測定溫度係設為常溫。 另外,將拉伸試片在220℃下加熱2小時後,自然冷卻至常溫。針對賦予此種熱歷程後之拉伸試片,以與常態下之拉伸強度相同之方式測定拉伸強度。結果如表3所示。>Tensile strength> The surface-treated copper foils of Examples 1 to 14 and Comparative Examples 1 to 5 obtained in the above manner were cut into short strips with a width of 12.7 mm and a length of 130 mm, and used as tensile test pieces. By the method according to IPC-TM-650, the tensile strength of the tensile test piece under normal conditions was measured. As a measurement device, a 1122 type tensile tester of Instron Corporation was used, and the measurement temperature was set to normal temperature. In addition, after heating the tensile test piece at 220°C for 2 hours, it was naturally cooled to normal temperature. For the tensile test piece after such a thermal history was given, the tensile strength was measured in the same manner as the tensile strength under normal conditions. The results are shown in Table 3.

>蝕刻因數> 藉由減成法,於實施例1至實施例14及比較例1至比較例5之表面處理銅箔上,形成L&S為30 µm/30 µm之抗蝕劑圖案。然後,進行蝕刻而形成配線圖案。作為抗蝕劑,使用乾式抗蝕劑膜,作為蝕刻液,使用含有氯化銅及鹽酸之混合液。然後,測定所獲得之配線圖案之蝕刻因數(Ef)。所謂蝕刻因數,係指將銅箔之箔厚設為H,將所形成之配線圖案之底部寬度設為B,將所形成之配線圖案之頂部寬度設為T時,以下式表示之值。 Ef=2H/(B-T) 本實施例及比較例中,蝕刻因數為2.5以上之試片係設為良品,未達2.5之試片係設為不良品。>etching factor> By subtractive method, a resist pattern with L&S of 30 µm/30 µm was formed on the surface-treated copper foils of Examples 1 to 14 and Comparative Examples 1 to 5. Then, etching is performed to form a wiring pattern. As the resist, a dry resist film was used, and as the etching solution, a mixed solution containing copper chloride and hydrochloric acid was used. Then, the etching factor (Ef) of the obtained wiring pattern was measured. The etching factor refers to a value represented by the following formula when the thickness of the copper foil is H, the bottom width of the formed wiring pattern is B, and the top width of the formed wiring pattern is T. Ef=2H/(B-T) In this embodiment and the comparative example, the test piece having an etching factor of 2.5 or more is regarded as a good product, and the test piece less than 2.5 is regarded as a defective product.

若蝕刻因數小,則配線圖案中之側壁之垂直性崩塌,線寬窄之微細配線圖案時,有於鄰接之配線圖案之間產生銅箔之溶解殘留而發生短路之危險性、導致斷線之危險性。於本試驗中,針對成為適時蝕刻位置(抗蝕劑端部之位置與配線圖案之底部之位置對齊)時之配線圖案,利用顯微鏡測定底部寬度B及頂部寬度T,算出蝕刻因數。結果如表3所示。If the etching factor is small, the verticality of the side walls in the wiring pattern collapses, and in the case of fine wiring patterns with narrow line widths, there is a risk of dissolution and residue of copper foil between adjacent wiring patterns, resulting in the risk of short-circuit and wire breakage. Sex. In this test, with respect to the wiring pattern when the etching position becomes appropriate (the position of the end of the resist is aligned with the position of the bottom of the wiring pattern), the bottom width B and the top width T are measured with a microscope, and the etching factor is calculated. The results are shown in Table 3.

[密接性] 在銅箔的粗化面接合樹脂製基板,製作出測定用樣品。樹脂製基板使用市售的聚苯醚系樹脂(松下股份有限公司製造的超低傳輸損耗多層基板材料MEGTRON6),接合時的硬化溫度為210℃,硬化時間為2小時。[Adhesion] A resin substrate was joined to the roughened surface of the copper foil to prepare a sample for measurement. As the resin substrate, a commercially available polyphenylene ether resin (Ultra Low Transmission Loss Multilayer Substrate Material MEGTRON6 manufactured by Panasonic Corporation) was used, and the curing temperature during bonding was 210°C, and the curing time was 2 hours.

將所製作的測定用樣品之銅箔蝕刻加工成寬度10 mm的電路配線後,利用雙面膠帶將樹脂製基板側固定在不鏽鋼板上,以50 mm/分鐘的速度將電路配線沿90度方向拉伸而剝離,測定密接性(kN/m)。密接性之測定係使用萬能材料試驗機(A&D股份有限公司製造的Tensilon)進行。 本實施例及比較例中,將密接性為0.4 kN/m以上之情形設為良品,將未達0.4 kN/m之情形設為不良品。After etching the copper foil of the prepared measurement sample into a circuit wiring with a width of 10 mm, the resin substrate side is fixed to the stainless steel plate with double-sided tape, and the circuit wiring is oriented in a 90-degree direction at a speed of 50 mm/minute Stretched and peeled, and the adhesiveness (kN/m) was measured. The measurement of the adhesion is performed using a universal material testing machine (Tensilon manufactured by A&D Co., Ltd.). In this example and the comparative example, the case where the adhesiveness is 0.4 kN/m or more is regarded as a good product, and the case where it is less than 0.4 kN/m is regarded as a defective product.

[操作性:褶皺不良數] 將實施例1至實施例14及比較例1至比較例5之表面處理銅箔切成一邊200 mm之正方形狀,加壓接合於基板FR4,製作覆銅積層板。接合之條件係溫度170℃、壓力1.5 MPa、加壓時間1小時。針對各表面處理銅箔,分別製作30片覆銅積層板,以目視確認銅箔之褶皺,計數於銅箔產生褶皺之覆銅積層板之數量(褶皺不良數)。藉由褶皺不良數,評價表面處理銅箔之操作性。褶皺不良數為3片以下時設為合格,為4片以上時設為不合格。結果如表3所示。[Operability: Number of bad wrinkles] The surface-treated copper foils of Examples 1 to 14 and Comparative Examples 1 to 5 were cut into a square shape with a side of 200 mm, and pressure-bonded to the substrate FR4 to produce a copper-clad laminate. The joining conditions are temperature 170°C, pressure 1.5 MPa, and pressurization time 1 hour. For each surface-treated copper foil, 30 pieces of copper-clad laminates were produced, and the wrinkles of the copper foil were visually confirmed, and the number of copper-clad laminates with wrinkles in the copper foil (the number of defective wrinkles) was counted. Based on the number of wrinkles, the operability of the surface-treated copper foil was evaluated. When the number of wrinkle defects is 3 or less, it is regarded as a pass, and when it is 4 or more, it is regarded as a pass. The results are shown in Table 3.

[頂點曲率算術平均Ssc、Rpm] 使用BRUKER公司之三維白色光干涉型顯微鏡Wyko ContourGT-K,測定實施例1至實施例14及比較例1至比較例5之表面處理銅箔之粗化面之表面形狀,進行形狀解析,求出頂點曲率算術平均Ssc及Rpm。形狀解析係使用高分辨率CCD(charge coupled device,電荷耦合器件)相機以VSI(Virtual Switch Interface,虛擬交換接口)測定方式進行。條件係設為光源為白色光、測定倍率為10倍、測定範圍為477 µm×357.8 µm、橫向取樣(Lateral Sampling)為0.38 µm、速度(speed)為1、回溯掃描高度(Backscan)為10 µm、長度(Length)為10 µm、閾值(Threshold)為3%,進行項目移除(Terms Removal) (Cylinder and Tilt)、資料恢復(Data Restore)(方法:legacy、迭代(iterations) 5)、統計過濾(Statistic Filter)(過濾尺寸(Filter Size):3、過濾類型(Filter Type):中值(Median))之過濾處理之後,進行資料處理。結果如表3所示。[Vertical Curvature Arithmetic Average Ssc, Rpm] The surface shape of the roughened surface of the surface-treated copper foil of Examples 1 to 14 and Comparative Examples 1 to 5 was measured using Wyko ContourGT-K, a three-dimensional white light interference microscope of BRUKER, and the shape was analyzed to obtain The vertex curvature arithmetic mean Ssc and Rpm. The shape analysis system uses a high-resolution CCD (charge coupled device) camera in a VSI (Virtual Switch Interface) measurement method. The conditions are set to white light source, measuring magnification of 10 times, measuring range of 477 µm × 357.8 µm, lateral sampling (Lateral Sampling) 0.38 µm, speed (speed) 1, back scanning height (Backscan) 10 µm , Length (Length) is 10 µm, Threshold (Threshold) is 3%, Project Removal (Cylinder and Tilt), Data Restore (Methods: legacy, iterations 5), Statistics After filtering (Statistic Filter) (Filter Size: 3, Filter Type: Median), data processing is performed. The results are shown in Table 3.

[結晶粒之分佈] 使用TSL Solutions股份有限公司之EBSD(Electron Back Scatter Diffraction,電子束背向散射繞射)相機Hikari/DC5.2/A5.2及日本電子股份有限公司(JEOL)之掃描式電子顯微鏡JSM-7001FA,於倍率5000倍、電子束步進量(beam step) 0.05之條件下,測定表面處理銅箔之粗化面之結晶粒。利用EBSD之結晶粒之測定中,設為方位差15°以上之結晶粒界,且將由結晶粒界包圍之區域設為結晶粒。[Distribution of crystal grains] Use EBSD (Electron Back Scatter Diffraction) camera Hikari/DC5.2/A5.2 of TSL Solutions Co., Ltd. and scanning electron microscope JSM-7001FA of JEOL, The crystal grains of the roughened surface of the surface-treated copper foil were measured under the conditions of a magnification of 5000 times and a beam step of 0.05. In the measurement of crystal grains by EBSD, the crystal grain boundaries with an orientation difference of 15° or more are set, and the area surrounded by the crystal grain boundaries is set as crystal grains.

此時,對表面處理銅箔之切斷面進行CP(Cross Section Polisher,截面拋光儀)研磨,對該研磨面中圖2所示之範圍之部分進行EBSD之測定。亦即,將表面處理銅箔之箔厚設為t時,如圖2所示,對與粗化面之相反側之面接觸之縱(厚度方向之長度)0.8 t、橫(與厚度方向正交之方向之長度)1.6 t之矩形之範圍,進行EBSD之測定。例如,箔厚t為10 µm時,成為縱8.0 µm、橫16.0 µm之矩形之範圍,箔厚t為6 µm時,成為縱4.8 µm、橫9.6 µm之矩形之範圍,箔厚t為4 µm時,成為縱3.2 µm、橫6.4 µm之矩形之範圍。 基於EBSD(電子束背向散射繞射法)之GRAIN SIZE之資料,算出前述之結晶粒之比率R1、R2、R3。結果如表3所示。At this time, CP (Cross Section Polisher, cross-section polisher) polishing was performed on the cut surface of the surface-treated copper foil, and EBSD was measured on the part of the polished surface within the range shown in FIG. 2. That is, when the foil thickness of the surface-treated copper foil is set to t, as shown in FIG. 2, the vertical (length in the thickness direction) 0.8 t and the horizontal (positive to the thickness direction) of the surface in contact with the surface opposite to the roughened surface The length of the direction of intersection) 1.6 t rectangular area, measured EBSD. For example, when the foil thickness t is 10 µm, it becomes a rectangular area of 8.0 µm in length and 16.0 µm in width. When the foil thickness t is 6 µm, it becomes a rectangular area of 4.8 µm in length and 9.6 µm in width. The foil thickness t is 4 µm At this time, it becomes a rectangular area of 3.2 µm in length and 6.4 µm in width. Based on the data of GBSD SIZE of EBSD (Electron Beam Backscatter Diffraction Method), the aforementioned ratios of crystal grains R1, R2, R3 are calculated. The results are shown in Table 3.

[表3]

Figure 108114061-A0304-0003
[table 3]
Figure 108114061-A0304-0003

比較例1係於已知之製箔條件(日本專利第4583149號公報之實施例2)下所製造之銅箔,但由於結晶粒之個數之比率R3大,因此蝕刻因數(Ef)小,無法使L&S變細。 比較例2與實施例3相比通入流量小,因此結晶粒之個數之比率R2、R3變大,無法使L&S變細。Comparative Example 1 is a copper foil manufactured under known foil-making conditions (Example 2 of Japanese Patent No. 4583149), but since the ratio R3 of the number of crystal grains is large, the etching factor (Ef) is small and cannot be Make L&S thinner. Comparative Example 2 has a smaller flow rate than Example 3, so the ratio of the number of crystal grains R2 and R3 becomes large, and the L&S cannot be made fine.

比較例3由於通入流量過大,因此結晶粒之個數之比率R1變大,無法使L&S變細。 比較例4與實施例1相比,未以粗化處理之脈衝電流施加逆電流而粗化粒子未溶解,因此蝕刻因數降低。 比較例5由於粗化處理之電流大,因此粗化粒子變得粗大,由此導致於蝕刻時容易產生根部殘留,蝕刻因數降低。In Comparative Example 3, since the inflow rate is too large, the ratio R1 of the number of crystal grains becomes large, and the L&S cannot be made fine. In Comparative Example 4, as compared with Example 1, the reverse current was not applied with the pulse current of the roughening process and the coarsened particles were not dissolved, so the etching factor was reduced. In Comparative Example 5, since the current of the roughening process is large, the coarsened particles become coarse, which causes the root residue to easily occur during etching, and the etching factor decreases.

101‧‧‧電解銅箔 102‧‧‧陰極鼓 103‧‧‧拋光輪 104‧‧‧不溶性陽極 105‧‧‧電解液 101‧‧‧Electrolytic copper foil 102‧‧‧Cathode drum 103‧‧‧ Polishing wheel 104‧‧‧Insoluble anode 105‧‧‧Electrolyte

圖1係說明使用電解析出裝置製造電解銅箔之方法之圖。 圖2係說明結晶粒之分佈之測定方法之圖。FIG. 1 is a diagram illustrating a method of manufacturing an electrolytic copper foil using an electrolysis device. Fig. 2 is a diagram illustrating a method for measuring the distribution of crystal grains.

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Claims (6)

一種表面處理銅箔,其係於表面具有利用粗化處理形成之粗化面之表面處理銅箔,且 箔厚為10 µm以下, 前述粗化面之頂點曲率算術平均Ssc為0.7µm-1 以上且3.8µm-1 以下, 在200℃下加熱2小時後藉由電子束背向散射繞射法解析剖面時,結晶粒徑為0.5µm以上之結晶粒中,結晶粒徑為0.5µm以上且未達1.0µm之結晶粒之個數之比率R1為0.51以上且0.97以下,結晶粒徑為1.0µm以上且未達3.0µm之結晶粒之個數之比率R2為0.03以上且0.42以下,結晶粒徑為3.0µm以上之結晶粒之個數之比率R3為0.07以下。A surface-treated copper foil, which is a surface-treated copper foil having a roughened surface formed by roughening treatment on the surface, and the foil thickness is 10 µm or less, and the arithmetic mean Ssc of the vertex curvature of the roughened surface is 0.7 µm -1 or more And when the profile is analyzed by electron beam backscatter diffraction after heating for 2 hours at 200°C for 3.8µm -1 or less, among the crystal grains with a crystal grain size of 0.5µm or more, the crystal grain size is 0.5µm or more and not The ratio R1 of the number of crystal grains up to 1.0µm is 0.51 or more and 0.97, the ratio R2 of the number of crystal grains of 1.0µm or more and less than 3.0µm is 0.03 or more and 0.42, the crystal grain size The ratio R3 of the number of crystal grains of 3.0 µm or more is 0.07 or less. 如請求項1所述之表面處理銅箔,其中,前述粗化面之頂點曲率算術平均Ssc為1.0µm-1 以上且2.5µm-1 以下, 前述比率R1為0.59以上且0.96以下,前述比率R2為0.04以上且0.41以下,前述比率R3為0。The surface-treated copper foil according to claim 1, wherein the arithmetic mean Ssc of the vertex curvature of the roughened surface is 1.0 µm -1 or more and 2.5 µm -1 or less, the aforementioned ratio R1 is 0.59 or more and 0.96 or less, and the aforementioned ratio R2 It is 0.04 or more and 0.41 or less, and the aforementioned ratio R3 is 0. 如請求項1或2所述之表面處理銅箔,其中,前述粗化面之Rpm為0.5µm以上且3.5µm以下。The surface-treated copper foil according to claim 1 or 2, wherein the Rpm of the roughened surface is 0.5 µm or more and 3.5 µm or less. 如請求項1至3中任一項所述之表面處理銅箔,其中,在常態下之拉伸強度為400MPa以上且780MPa以下,在220℃下加熱2小時後在常溫下測定之拉伸強度為300MPa以上。The surface-treated copper foil according to any one of claims 1 to 3, wherein the tensile strength under normal conditions is 400 MPa or more and 780 MPa or less, and the tensile strength measured at ordinary temperature after heating at 220°C for 2 hours It is more than 300MPa. 一種覆銅積層板,其具備如申請專利範圍第1至4項中任一項所述之表面處理銅箔、及積層於該表面處理銅箔之粗化面之樹脂製基板。A copper-clad laminate comprising the surface-treated copper foil as described in any one of claims 1 to 4 and a resin substrate laminated on the roughened surface of the surface-treated copper foil. 一種印刷線路板,其具備如申請專利範圍第5項所述之覆銅積層板。A printed wiring board equipped with a copper-clad laminate as described in item 5 of the patent application scope.
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