TWI734976B - Surface treatment copper foil, copper clad laminate and printed circuit board - Google Patents

Surface treatment copper foil, copper clad laminate and printed circuit board Download PDF

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TWI734976B
TWI734976B TW108114061A TW108114061A TWI734976B TW I734976 B TWI734976 B TW I734976B TW 108114061 A TW108114061 A TW 108114061A TW 108114061 A TW108114061 A TW 108114061A TW I734976 B TWI734976 B TW I734976B
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copper foil
less
treated copper
crystal grains
ratio
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TW202001000A (en
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佐藤章
中崎龍介
篠崎淳
佐佐木貴大
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日商古河電氣工業股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60Electroplating characterised by the structure or texture of the layers
    • C25D5/615Microstructure of the layers, e.g. mixed structure
    • C25D5/617Crystalline layers
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00Electroforming
    • C25D1/04Wires; Strips; Foils
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18Electroplating using modulated, pulsed or reversing current
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60Electroplating characterised by the structure or texture of the layers
    • C25D5/605Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/06Wires; Strips; Foils
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal

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  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
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  • Parts Printed On Printed Circuit Boards (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

本發明提供一種表面處理銅箔,其具有可利用製程成本優異之減成法形成L&S為例如30 µm/30 µm以下之微細配線的微細配線加工性,且與樹脂製基板之密接性優異。本發明係一種表面處理銅箔,其係於表面具有利用粗化處理形成之粗化面之表面處理銅箔,且箔厚為10 µm以下,粗化面之頂點曲率算術平均Ssc為0.7 µm-1 以上且3.8 µm-1 以下。並且,在200℃下加熱2小時後藉由電子束背向散射繞射法解析剖面時,結晶粒徑為0.5 µm以上之結晶粒中,結晶粒徑為0.5 µm以上且未達1.0 µm之結晶粒之個數之比率R1為0.51以上且0.97以下,結晶粒徑為1.0 µm以上且未達3.0 µm之結晶粒之個數之比率R2為0.03以上且0.42以下,結晶粒徑為3.0 µm以上之結晶粒之個數之比率R3為0.07以下。The present invention provides a surface-treated copper foil that has fine wiring processability that can form fine wiring with L&S of, for example, 30 µm/30 µm or less using a subtractive method with excellent process cost, and has excellent adhesion to a resin substrate. The present invention is a surface-treated copper foil having a surface based on the roughened surface is formed using the roughening treated copper foil and a foil thickness of 10 μm or less, and the vertex curvature of the roughened surface arithmetic mean Ssc of 0.7 μm - 1 or more and 3.8 µm -1 or less. In addition, when the cross-section was analyzed by electron beam backscatter diffraction method after heating at 200°C for 2 hours, among the crystal grains with a grain size of 0.5 µm or more, the crystal grains had a grain size of 0.5 µm or more and less than 1.0 µm. The ratio R1 of the number of grains is 0.51 or more and 0.97 or less, the ratio of the number of crystal grains having a grain size of 1.0 µm or more and less than 3.0 µm, R2 is 0.03 or more and 0.42 or less, and the grain size is 3.0 µm or more The ratio R3 of the number of crystal grains is 0.07 or less.

Description

表面處理銅箔、覆銅積層板及印刷線路板Surface treatment copper foil, copper clad laminates and printed circuit boards

本發明係關於一種表面處理銅箔、以及使用該表面處理銅箔之覆銅積層板及印刷線路板,該表面處理銅箔適於具有高密度配線電路(精細圖案)之印刷線路板等之微細配線加工性、與樹脂製基板之密接性優異。The present invention relates to a surface-treated copper foil, and copper-clad laminates and printed circuit boards using the surface-treated copper foil. The surface-treated copper foil is suitable for the fineness of printed circuit boards with high-density wiring circuits (fine patterns), etc. Excellent wiring processability and adhesion to resin substrates.

作為用於覆銅積層板、印刷線路板之銅箔,使用藉由將析出至電解析出裝置之鼓之銅箔自鼓剝離而獲得之電解銅箔。自鼓剝離所得之電解銅箔之電解析出起始面(光滑面。以下,稱為「S面」)相對較平滑,作為相反側之面之電解析出結束面(粗糙面。以下,稱為「M面」)通常具有凹凸。於電解銅箔之M面上配置樹脂製基板並進行熱壓接而製造覆銅積層板,藉由對M面實施粗化處理將其粗化,而提高與樹脂製基板之接著性。As the copper foil used for the copper-clad laminated board and the printed wiring board, the electrolytic copper foil obtained by peeling the copper foil deposited to the drum of the electrolysis extraction apparatus from the drum is used. The electrolytic copper foil obtained by peeling from the drum has a relatively smooth start surface (smooth surface. Hereinafter referred to as "S surface"), which is the end surface of the electrolytic copper foil on the opposite side (rough surface. Hereinafter, referred to as “M-face”) usually has unevenness. A resin substrate is placed on the M surface of the electrolytic copper foil and thermocompression bonding is performed to manufacture a copper-clad laminate, and the M surface is roughened by roughening treatment to improve the adhesion to the resin substrate.

最近,業界於銅箔之粗化面,預先貼合環氧樹脂等接著用樹脂,使該接著用樹脂成為半硬化狀態(B階段)之絕緣樹脂層,製成附樹脂之銅箔,將該附樹脂之銅箔用作表面電路形成用之銅箔,將該銅箔之絕緣樹脂層之側熱壓接於絕緣基板,從而製造印刷線路板(尤其是增層線路板)。對於增層線路板,期望將各種電子零件高度積體化,對應於此,對於配線圖案,亦要求高密度化,因而逐漸變為要求微細之線寬、線間間距之配線圖案、所謂之精細圖案之印刷線路板。例如,作為伺服器、路由器、通訊基站、車載基板等中所使用之多層基板或智慧型手機用多層基板,要求具有高密度極微細配線之印刷線路板(以下,稱為「高密度線路板」)。Recently, in the industry, an adhesive resin such as epoxy resin is preliminarily applied to the roughened surface of copper foil, and the adhesive resin becomes an insulating resin layer in a semi-cured state (stage B) to form a copper foil with resin. The copper foil with resin is used as the copper foil for surface circuit formation, and the side of the insulating resin layer of the copper foil is thermocompression bonded to the insulating substrate to manufacture printed circuit boards (especially build-up circuit boards). For build-up circuit boards, various electronic parts are expected to be highly integrated. Corresponding to this, high-density wiring patterns are also required. Therefore, wiring patterns that require fine line widths and spacing between lines, so-called fine Patterned printed circuit board. For example, as multilayer substrates used in servers, routers, communication base stations, automotive substrates, etc., or multilayer substrates for smartphones, printed circuit boards with high-density and fine wiring are required (hereinafter referred to as "high-density circuit boards") ).

任意階(AnyLayer)(利用配置之自由度高之雷射通孔將層間連接)之高密度線路板主要用於智慧型手機之主板,但近年來微細配線化不斷推進,要求線寬及線間之間距(以下,稱為「L&S」)分別為30 µm以下之配線。高密度線路板先前係由印刷線路板製造商利用使用光阻之減成法而製造,但若L&S變窄,則配線之剖面形狀崩塌,因此以如超過500 mm見方之大面積將高密度線路板進行封裝成型時,難以形成L&S為30 µm/30 µm(線寬(L)為30 µm,線間之間距(S)為30 µm)以下之配線。High-density circuit boards of any level (AnyLayer) (using laser vias with high configuration freedom to connect between layers) are mainly used for the motherboards of smart phones. However, in recent years, the miniaturization of wiring has continued to advance, requiring line width and line spacing. The distance between each other (hereinafter referred to as "L&S") shall be 30 µm or less for wiring. High-density circuit boards were previously manufactured by printed circuit board manufacturers using the subtractive method using photoresistance. However, if the L&S becomes narrower, the cross-sectional shape of the wiring will collapse. Therefore, the high-density circuit can be made in a large area over 500 mm square. When the board is packaged and molded, it is difficult to form wiring with an L&S of 30 µm/30 µm (line width (L) is 30 µm, and line spacing (S) is 30 µm) or less.

因此,最近,為了於高密度線路板中形成L&S為30 µm/30 µm以下之配線,MSAP法(Modified Semi Additive Process,改良半加成法)之導入不斷推進。然而,MSAP法與減成法相比製程成本高,因此有電路基板製造商之負擔大之問題。另外,形成微細配線時,有效的是減小銅箔之表面粗糙度,但另一方面,若減小銅箔之表面粗糙度,則有樹脂製基板與銅箔之密接性降低之虞。Therefore, recently, in order to form wiring with an L&S of 30 µm/30 µm or less in high-density circuit boards, the introduction of the MSAP method (Modified Semi Additive Process) has been advancing. However, the MSAP method has a higher process cost than the subtractive method, so there is a problem that the burden on the circuit board manufacturer is heavy. In addition, when forming fine wiring, it is effective to reduce the surface roughness of the copper foil. On the other hand, if the surface roughness of the copper foil is reduced, the adhesion between the resin substrate and the copper foil may decrease.

專利文獻1中揭示有藉由將極薄銅層之整體之平均結晶粒徑進行微細化而形成微細配線之技術,但若結晶粒徑過小,則有因側蝕(配線剖面之橫向蝕刻)之影響而無法獲得高蝕刻因數之虞。 另外,專利文獻2中揭示有與高耐熱性樹脂之密接性優異之銅箔,但有尖銳形狀之粗化粒子於蝕刻時容易溶解殘留(根部殘留),而微細配線加工性變得不充分之虞。Patent Document 1 discloses a technique for forming fine wiring by minimizing the average crystal grain size of the entire ultra-thin copper layer. However, if the crystal grain size is too small, side etching (lateral etching of the wiring section) may occur. It may not be possible to obtain a high etching factor due to influence. In addition, Patent Document 2 discloses a copper foil with excellent adhesion to a high heat-resistant resin, but the roughened particles with sharp shapes tend to dissolve and remain (root residues) during etching, and the fine wiring processability becomes insufficient. Yu.

[先前技術文獻] (專利文獻) 專利文獻1:日本專利6158573號公報 專利文獻2:日本特開2010-236058號公報[Prior Technical Literature] (Patent Document) Patent Document 1: Japanese Patent No. 6158573 Patent Document 2: Japanese Patent Application Laid-Open No. 2010-236058

[發明所欲解決的問題] 本發明之問題在於提供一種表面處理銅箔,其具有可利用製程成本優異之減成法形成L&S為例如30 µm/30 µm以下之微細配線的微細配線加工性,且與樹脂製基板之密接性優異。另外,本發明之問題一併在於提供一種具有如上所述之微細配線加工性之覆銅積層板、及具有高密度極微細配線之印刷線路板。[The problem to be solved by the invention] The problem of the present invention is to provide a surface-treated copper foil that has fine wiring processability that can be used to form fine wiring with L&S of 30 µm/30 µm or less, for example, by a subtractive method with excellent process cost, and adhesiveness with a resin substrate Excellent. In addition, the problem of the present invention is to provide a copper-clad laminate having the above-mentioned fine wiring processability and a printed wiring board with high-density ultra-fine wiring.

[解決問題的技術手段] 本發明之一態樣之表面處理銅箔之主旨在於:其係於表面具有利用粗化處理形成之粗化面之表面處理銅箔,且箔厚為10 µm以下,粗化面之頂點曲率算術平均Ssc為0.7 µm-1 以上且3.8 µm-1 以下,在200℃下加熱2小時後藉由電子束背向散射繞射法解析剖面時,結晶粒徑為0.5 µm以上之結晶粒中,結晶粒徑為0.5 µm以上且未達1.0 µm之結晶粒之個數之比率R1為0.51以上且0.97以下,結晶粒徑為1.0 µm以上且未達3.0 µm之結晶粒之個數之比率R2為0.03以上且0.42以下,結晶粒徑為3.0 µm以上之結晶粒之個數之比率R3為0.07以下。[Technical Means to Solve the Problem] The main purpose of the surface-treated copper foil of one aspect of the present invention is that it is a surface-treated copper foil having a roughened surface formed by roughening treatment on the surface, and the foil thickness is 10 µm or less, The arithmetic mean Ssc of the apex curvature of the roughened surface is 0.7 µm -1 or more and 3.8 µm -1 or less. When the cross section is analyzed by electron beam backscatter diffraction method after heating at 200°C for 2 hours, the crystal grain size is 0.5 µm Among the above crystal grains, the ratio R1 of the number of crystal grains with a grain size of 0.5 µm or more and less than 1.0 µm is 0.51 or more and 0.97 or less, and the ratio of the number of crystal grains with a crystal grain size of 1.0 µm or more and less than 3.0 µm The ratio R2 of the number is 0.03 or more and 0.42 or less, and the ratio R3 of the number of crystal grains with a crystal grain size of 3.0 µm or more is 0.07 or less.

另外,本發明之另一態樣之覆銅積層板之主旨在於:具備上述一態樣之表面處理銅箔、及積層於該表面處理銅箔之粗化面之樹脂製基板。 進而,本發明之另一態樣之印刷線路板之主旨在於:具備上述另一態樣之覆銅積層板。In addition, another aspect of the copper-clad laminated board of the present invention is mainly aimed at: the surface-treated copper foil of the above-mentioned aspect and the resin substrate laminated on the roughened surface of the surface-treated copper foil. Furthermore, the main purpose of the printed circuit board of another aspect of the present invention is to provide the copper clad laminate board of the other aspect described above.

[發明的效果] 本發明之表面處理銅箔具有可利用製程成本優異之減成法形成L&S為例如30 µm/30 µm以下之微細配線的微細配線加工性,且與樹脂製基板之密接性優異。另外,本發明之覆銅積層板具有如上所述之微細配線加工性。進而,本發明之印刷線路板具有高密度極微細配線。[Effects of the invention] The surface-treated copper foil of the present invention has fine wiring processability that can form fine wiring of 30 µm/30 µm or less by using a subtractive method with excellent process cost, and has excellent adhesion to a resin substrate. In addition, the copper-clad laminated board of the present invention has the fine wiring processability as described above. Furthermore, the printed wiring board of the present invention has high-density ultra-fine wiring.

對本發明之一實施形態進行說明。此外,以下所說明之實施形態表示本發明之一例,且本發明並不限定於本實施形態。另外,對本實施形態可施加各種變更或改良,此種施加了變更或改良之形態亦可包含於本發明。An embodiment of the present invention will be described. In addition, the embodiment described below shows an example of the present invention, and the present invention is not limited to this embodiment. In addition, various changes or improvements can be added to this embodiment, and such changes or improvements can also be included in the present invention.

本發明者等人進行了努力研究,結果發現,對於銅箔之微細配線加工性,銅箔中之結晶粒徑為0.5 µm以上之結晶粒之分佈狀態之影響高。一般而言,已知於微細配線之蝕刻加工中,相較於結晶粒內於結晶粒之粒界優先地進行溶解。結晶粒界相當於面方位不同之結晶粒之交界,原子排列之失配、缺陷存在較多,因此處於能量活性之狀態,因此於蝕刻中容易溶解。因此,可認為銅箔中之結晶粒越微細,結晶粒界越增多,溶解速度越快。The inventors of the present invention conducted diligent studies and found that the fine wiring processability of copper foil is highly influenced by the distribution of crystal grains with a crystal grain size of 0.5 µm or more in the copper foil. In general, it is known that in the etching process of fine wiring, the grain boundaries of the crystal grains are dissolved preferentially compared to the crystal grains. The crystal grain boundary is equivalent to the boundary of crystal grains with different plane orientations. There are many mismatches and defects in the arrangement of atoms, so it is in an energy-active state, so it is easy to dissolve in etching. Therefore, it can be considered that the finer the crystal grains in the copper foil, the greater the number of crystal grain boundaries and the faster the dissolution rate.

調查影響銅箔之微細配線加工性提高之因素,結果可知,在200℃下加熱2小時後0.5 µm以上且未達1.0 µm之結晶粒徑之結晶粒處於固定比率時,蝕刻時之縱向之溶解速度加快而蝕刻因數上升。但是,另一方面,發現若該尺寸之結晶粒之比率過多,則反而配線圖案剖面之頂部側(以下,將圖案上部設為頂部,將圖案下部設為底部)之橫向之溶解優先地進行,蝕刻因數減小。Investigating the factors that affect the improvement of copper foil's fine wiring processability, the results show that when the crystal grains of 0.5 µm or more and less than 1.0 µm are in a fixed ratio after heating at 200°C for 2 hours, the longitudinal dissolution during etching The speed increases and the etching factor increases. However, on the other hand, it was found that if the ratio of crystal grains of this size is too large, on the contrary, dissolution in the lateral direction of the top side of the cross section of the wiring pattern (hereinafter, the upper part of the pattern is referred to as the top and the lower part of the pattern is referred to as the bottom) preferentially proceeds. The etching factor is reduced.

具體而言,在200℃下加熱2小時後藉由電子束背向散射繞射法解析剖面時,結晶粒徑為0.5 µm以上之結晶粒中,若結晶粒徑為0.5 µm以上且未達1.0 µm之結晶粒之個數之比率R1為0.51以上且0.97以下,則蝕刻因數增加。但是,若比率R1大於0.97,則頂部側之蝕刻優先地進行而微細配線加工性降低,若比率R1小於0.51,則銅箔之厚度方向之蝕刻速度變慢而微細配線加工降低。Specifically, when the cross-section is analyzed by the electron beam backscattering diffraction method after heating at 200°C for 2 hours, among the crystal grains with a crystal grain size of 0.5 µm or more, if the crystal grain size is 0.5 µm or more and less than 1.0 If the ratio R1 of the number of µm crystal grains is 0.51 or more and 0.97 or less, the etching factor increases. However, if the ratio R1 is greater than 0.97, etching on the top side is preferentially performed and the fine wiring processability is reduced. If the ratio R1 is less than 0.51, the etching rate in the thickness direction of the copper foil becomes slower and the fine wiring processing decreases.

另外,若結晶粒徑成為3.0 µm以上之尺寸,則相對於結晶粒之體積而言粒界之面積較少而容易溶解殘留,因此因蝕刻速度之降低而導致配線圖案容易拖尾。具體而言,在200℃下加熱2小時後藉由電子束背向散射繞射法解析剖面時,結晶粒徑為0.5 µm以上之結晶粒中,結晶粒徑為3.0 µm以上之結晶粒之個數之比率R3為0或者超過0且0.07以下之範圍內,微細配線加工性提高,但若比率R3大於0.07,則尺寸大之結晶粒之溶解殘留之影響增加而微細配線加工性降低。In addition, if the crystal grain size is 3.0 µm or more, the area of the grain boundary relative to the volume of the crystal grains is small and it is easy to dissolve and remain. Therefore, the wiring pattern is likely to be tailed due to the decrease in the etching rate. Specifically, when the cross-section is analyzed by electron beam backscatter diffraction method after heating at 200°C for 2 hours, among the crystal grains with a grain size of 0.5 µm or more, one of the crystal grains with a crystal grain size of 3.0 µm or more When the ratio R3 of the number is 0 or exceeds 0 and is in the range of 0.07 or less, the fine wiring processability is improved, but if the ratio R3 is greater than 0.07, the influence of the dissolved residue of large crystal grains increases and the fine wiring processability decreases.

詳細內容將於後文進行敘述,如上所述之結晶粒之分佈可藉由使於製造電解銅箔時對電解液所賦予之電流密度均勻化而進行控制。 進而,在調查有助於微細配線加工性之因素之過程中,發現銅箔之粗化粒子之脊部附近部分之曲率之算術平均(粗化面之頂點曲率算術平均)Ssc之影響強。具體而言,頂點曲率算術平均Ssc為0.7 µm-1 以上且3.8 µm-1 以下時,蝕刻因數增加。頂點曲率算術平均Ssc係各種山結構之平均山頂曲率,由下述式表示。下述式中,z(x,y)係x,y座標中之高度方向之座標,N係粗化粒子之頂點個數。The details will be described later, and the distribution of the crystal grains as described above can be controlled by making the current density imparted to the electrolyte solution uniform when manufacturing the electrolytic copper foil. Furthermore, in the process of investigating the factors that contribute to the processability of fine wiring, it was found that the arithmetic mean of the curvature of the part near the ridge of the roughened particle of the copper foil (arithmetic mean of the curvature of the apex of the roughened surface) Ssc has a strong influence. Specifically, when the arithmetic mean Ssc of the vertex curvature is 0.7 µm -1 or more and 3.8 µm -1 or less, the etching factor increases. The arithmetic mean Ssc of vertex curvature is the average peak curvature of various mountain structures and is expressed by the following formula. In the following formula, z(x, y) is the height coordinate of the x and y coordinates, and N is the number of vertices of the coarsened particles.

[式1]

Figure 02_image001
[Formula 1]
Figure 02_image001

於該範圍內存在頂點曲率算術平均Ssc時,銅箔之粗化面之粗化粒子之頂點之彎曲程度處於適度之狀態,因此可認為蝕刻時不產生根部殘留(粗化粒子之頂端溶解殘留之狀態)而容易溶解,銅箔之拖尾得到抑制而蝕刻因數上升。When there is arithmetic mean Ssc of apex curvature in this range, the degree of curvature of the apex of the roughened particles on the roughened surface of the copper foil is in a moderate state. Therefore, it can be considered that no root residue will occur during etching (the tip of the roughened particle dissolves and remains) State) and easy to dissolve, the tailing of the copper foil is suppressed and the etching factor rises.

頂點曲率算術平均Ssc大於3.8 µm-1 時,粗化粒子之頂點之彎曲程度強,因此成為粗化粒子深深地刺入樹脂製基板之狀態而於蝕刻時產生根部殘留,銅箔之拖尾變長而蝕刻因數降低。頂點曲率算術平均Ssc小於0.7 µm-1 時,粗化粒子之頂點之彎曲程度平緩,因此粗化粒子對樹脂製基板之沒入程度差(投錨效應弱),樹脂製基板與銅箔之密接性降低。When the arithmetic mean Ssc of the apex curvature is greater than 3.8 µm -1 , the apex of the roughened particles has a strong degree of curvature. Therefore, the roughened particles penetrate deeply into the resin substrate, resulting in root residue during etching and tailing of the copper foil. It becomes longer and the etching factor decreases. When the arithmetic mean Ssc of vertex curvature is less than 0.7 µm -1 , the degree of curvature of the apex of the roughened particles is gentle, so the degree of immersion of the roughened particles into the resin substrate is poor (weak anchoring effect), and the adhesion between the resin substrate and the copper foil reduce.

詳細內容將於後文進行敘述,可藉由使粗化粒子之頂點溶解而使頂點曲率算術平均Ssc降低,因此若於脈衝鍍覆、粗化處理之後藉由將銅箔浸漬於硫酸銅水溶液之方法而使粗化粒子之頂點溶解,則可控制頂點曲率算術平均Ssc。The details will be described later. The arithmetic mean Ssc of the apex curvature can be reduced by dissolving the apex of the roughened particle. Therefore, if the copper foil is immersed in a copper sulfate aqueous solution after the pulse plating and roughening treatment, Method to dissolve the apex of the coarsened particle, the arithmetic mean Ssc of the apex curvature can be controlled.

亦即,本發明之一實施形態之表面處理銅箔係於表面具有利用粗化處理形成之粗化面之表面處理銅箔,且箔厚為10 µm以下,粗化面之頂點曲率算術平均Ssc為0.7 µm-1 以上且3.8 µm-1 以下。並且,在200℃下加熱2小時後藉由電子束背向散射繞射法解析剖面時,結晶粒徑為0.5 µm以上之結晶粒中,結晶粒徑為0.5 µm以上且未達1.0 µm之結晶粒之個數之比率R1為0.51以上且0.97以下,結晶粒徑為1.0 µm以上且未達3.0 µm之結晶粒之個數之比率R2為0.03以上且0.42以下,結晶粒徑為3.0 µm以上之結晶粒之個數之比率R3為0.07以下。亦即,結晶粒徑為3.0 µm以上之結晶粒為任意成分,比率R3為0或超過0且0.07以下。That is, the surface-treated copper foil of one embodiment of the present invention is a surface-treated copper foil having a roughened surface formed by a roughening treatment on the surface, and the foil thickness is 10 µm or less, and the arithmetic mean Ssc of the apex curvature of the roughened surface It is 0.7 µm -1 or more and 3.8 µm -1 or less. In addition, when the cross-section was analyzed by electron beam backscatter diffraction method after heating at 200°C for 2 hours, among the crystal grains with a grain size of 0.5 µm or more, the crystal grains had a grain size of 0.5 µm or more and less than 1.0 µm. The ratio R1 of the number of grains is 0.51 or more and 0.97 or less, the ratio of the number of crystal grains having a grain size of 1.0 µm or more and less than 3.0 µm, R2 is 0.03 or more and 0.42 or less, and the grain size is 3.0 µm or more The ratio R3 of the number of crystal grains is 0.07 or less. That is, crystal grains with a crystal grain size of 3.0 µm or more are optional components, and the ratio R3 is 0 or more than 0 and less than 0.07.

本發明之一實施形態之表面處理銅箔中,進而較佳為粗化面之頂點曲率算術平均Ssc為1.0 µm-1 以上且2.5 µm-1 以下。另外,較佳為在200℃下加熱2小時後藉由電子束背向散射繞射法解析剖面時,結晶粒徑為0.5 µm以上之結晶粒中,結晶粒徑為0.5 µm以上且未達1.0 µm之結晶粒之個數之比率R1為0.59以上且0.96以下,結晶粒徑為1.0 µm以上且未達3.0 µm之結晶粒之個數之比率R2為0.04以上且0.41以下,結晶粒徑為3.0 µm以上之結晶粒之個數之比率R3為0。In the surface-treated copper foil of one embodiment of the present invention, it is more preferable that the arithmetic mean Ssc of the apex curvature of the roughened surface is 1.0 µm -1 or more and 2.5 µm -1 or less. In addition, it is preferable that when the cross-section is analyzed by electron beam backscatter diffraction method after heating at 200°C for 2 hours, the crystal grain size is 0.5 µm or more, and the crystal grain size is 0.5 µm or more and less than 1.0. The ratio R1 of the number of µm crystal grains is 0.59 or more and 0.96 or less, the ratio R2 of the number of crystal grains 1.0 µm or more and less than 3.0 µm is 0.04 or more and 0.41 or less, and the crystal particle size is 3.0 The ratio R3 of the number of crystal grains above µm is 0.

上述之本實施形態之表面處理銅箔具有可利用製程成本優異之減成法形成L&S為例如30 µm/30 µm以下之微細配線的微細配線加工性,且與樹脂製基板之密接性優異。因此,本實施形態之表面處理銅箔可較佳地用於製造覆銅積層板、印刷線路板,可製造具有高密度極微細配線之印刷線路板。The above-mentioned surface-treated copper foil of this embodiment has fine wiring processability that can form L&S fine wiring of, for example, 30 µm/30 µm or less by a subtractive method with excellent process cost, and has excellent adhesion to a resin substrate. Therefore, the surface-treated copper foil of this embodiment can be preferably used to manufacture copper-clad laminates and printed circuit boards, and can manufacture printed circuit boards with high-density ultra-fine wiring.

本實施形態之表面處理銅箔中,箔厚為10 µm以下。若表面處理銅箔之箔厚超過10 µm,則有產生銅箔之溶解時間變長而蝕刻因數降低之不良情況之虞。 另外,本實施形態之表面處理銅箔中,粗化面之Rpm(粗糙度曲線之最大山高度之10點平均)亦可設為0.5 µm以上且3.5 µm以下。若粗化面之Rpm未達0.5 µm,則有產生與樹脂製基板之密接性降低之不良情況之虞。另一方面,若粗化面之Rpm超過3.5 µm,則有產生蝕刻因數降低之不良情況之虞。In the surface-treated copper foil of this embodiment, the foil thickness is 10 µm or less. If the thickness of the surface-treated copper foil exceeds 10 µm, the dissolution time of the copper foil may become longer and the etching factor may decrease. In addition, in the surface-treated copper foil of this embodiment, the Rpm of the roughened surface (10 points average of the maximum mountain height of the roughness curve) can also be set to 0.5 µm or more and 3.5 µm or less. If the Rpm of the roughened surface is less than 0.5 µm, there is a risk that the adhesiveness with the resin substrate may decrease. On the other hand, if the Rpm of the roughened surface exceeds 3.5 µm, there is a risk that the etching factor will decrease.

進而,本實施形態之表面處理銅箔中,常態下之拉伸強度亦可設為400 MPa以上且780 MPa以下,在220℃下加熱2小時後在常溫下測定之拉伸強度亦可設為300 MPa以上。 若常態下之拉伸強度為400 MPa以上且780 MPa以下,則表面處理銅箔之操作性及蝕刻性良好。另外,在220℃下加熱2小時後在常溫下測定之拉伸強度為300 MPa以上時,蝕刻性良好。Furthermore, in the surface-treated copper foil of this embodiment, the tensile strength under normal conditions can also be set to 400 MPa or more and 780 MPa or less, and the tensile strength measured at room temperature after heating at 220°C for 2 hours can also be set as Above 300 MPa. If the tensile strength under normal conditions is 400 MPa or more and 780 MPa or less, the handling and etching properties of the surface-treated copper foil are good. In addition, when the tensile strength measured at room temperature after heating at 220°C for 2 hours is 300 MPa or more, the etching properties are good.

此外,本發明中,所謂「結晶粒徑」,係指圓當量直徑。另外,本發明中,所謂「常態」,係指表面處理銅箔未經過熱處理等熱歷程,放置於常溫(亦即,約25℃)下之狀態。常態下之拉伸強度可藉由依據IPC-TM-650之方法在常溫下進行測定。另外,加熱後之拉伸強度可將表面處理銅箔加熱至220℃並保持2小時後,自然冷卻至室溫,在常溫下藉由與常態下之拉伸強度相同之方法進行測定。In addition, in the present invention, the "crystal grain size" refers to a circle equivalent diameter. In addition, in the present invention, the so-called "normal state" refers to a state where the surface-treated copper foil has not undergone thermal history such as heat treatment and is left at room temperature (that is, about 25°C). The tensile strength under normal conditions can be measured at room temperature by the method according to IPC-TM-650. In addition, the tensile strength after heating can be measured by heating the surface-treated copper foil to 220°C and keeping it for 2 hours, then cooling it to room temperature naturally, and measuring the tensile strength at room temperature by the same method as that under normal conditions.

以下,對本實施形態之表面處理銅箔更詳細地進行說明。首先,對表面處理銅箔之製造方法進行說明。 (1)關於電解銅箔之製造方法 電解銅箔例如可使用如圖1所示之電解析出裝置進行製造。圖1之電解析出裝置具備:不溶性陽極104,其包含被覆有鉑族元素或其氧化物之鈦;鈦製陰極鼓102,其與不溶性陽極104對向而設置;及拋光輪103,其對陰極鼓102進行研磨而去除產生於陰極鼓102之表面之氧化膜。Hereinafter, the surface-treated copper foil of this embodiment will be described in more detail. First, the manufacturing method of surface-treated copper foil is demonstrated. (1) About the manufacturing method of electrolytic copper foil The electrolytic copper foil can be manufactured using, for example, an electrolytic extraction device as shown in FIG. 1. The electrolysis extraction device of FIG. 1 includes: an insoluble anode 104, which contains titanium coated with a platinum group element or its oxide; a titanium cathode drum 102, which is arranged opposite to the insoluble anode 104; and a polishing wheel 103, which is opposite The cathode drum 102 is polished to remove the oxide film generated on the surface of the cathode drum 102.

於陰極鼓102與不溶性陽極104之間供給電解液105(硫酸-硫酸銅水溶液),一面使陰極鼓102以固定速度旋轉,一面於陰極鼓102與不溶性陽極104之間接通直流電流。藉此,銅析出至陰極鼓102之表面上。將所析出之銅自陰極鼓102之表面剝離,連續地進行捲取,藉此獲得電解銅箔101。The electrolyte 105 (sulfuric acid-copper sulfate aqueous solution) is supplied between the cathode drum 102 and the insoluble anode 104, while the cathode drum 102 is rotated at a fixed speed, a direct current is applied between the cathode drum 102 and the insoluble anode 104. In this way, copper is deposited on the surface of the cathode drum 102. The deposited copper is peeled off from the surface of the cathode drum 102 and continuously wound up, thereby obtaining an electrolytic copper foil 101.

本發明者等人進行了努力研究,結果發現,相對於藉由泵攪拌電解液之先前方法,藉由使電解液105產生強亂流之方法,使陰極鼓102與不溶性陽極104之間的電流密度較一般電解製箔更均勻化,從而可控制銅箔之結晶粒之分佈。作為使電解液105產生強亂流之方法之一例,可列舉空氣等氣體之通入。若於電解析出裝置設置氣體之通入裝置,一面調整流量一面對電解液105供給氣體而使電解液105起泡,則於電解液105中氣泡無規地運動而產生強亂流。The inventors of the present invention conducted diligent studies and found that, compared to the previous method of stirring the electrolyte by a pump, the current between the cathode drum 102 and the insoluble anode 104 is increased by generating a strong turbulence in the electrolyte 105 The density is more uniform than that of general electrolytic foil, so that the distribution of crystal grains in copper foil can be controlled. As an example of a method for generating a strong turbulent flow in the electrolyte 105, the introduction of gas such as air can be cited. If a gas inlet device is installed in the electrolysis extraction device, and the gas is supplied to the electrolyte 105 while adjusting the flow rate to make the electrolyte 105 bubble, the bubbles in the electrolyte 105 move randomly to generate a strong turbulent flow.

具體而言,若將氣體之流量設為2 L/min以上且8 L/min以下,則可使電流密度均勻化,容易獲得在200℃下加熱2小時後藉由電子束背向散射繞射法解析剖面時的結晶粒之分佈與前述之本實施形態之表面處理銅箔相同之電解銅箔。若氣體之流量未達2 L/min,則局部產生電流密度低之區域,容易形成粗大之結晶粒,因此有蝕刻因數降低之虞。另一方面,若氣體之流量超過8 L/min,則比率R1變大而側蝕成為優勢,因此有蝕刻因數降低之虞。Specifically, if the gas flow rate is set to 2 L/min or more and 8 L/min or less, the current density can be made uniform, and it is easy to obtain the electron beam backscattered diffraction after heating at 200°C for 2 hours. The distribution of crystal grains when analyzing the cross section by the method is the same electrolytic copper foil as the surface-treated copper foil of this embodiment described above. If the gas flow rate is less than 2 L/min, a region with low current density is locally generated, and coarse crystal grains are easily formed, so the etching factor may decrease. On the other hand, if the gas flow rate exceeds 8 L/min, the ratio R1 becomes larger and side etching becomes an advantage, so there is a possibility that the etching factor may decrease.

另外,作為另一實施形態,亦可於不溶性陽極之表面形成連續之凹凸。於凹凸之附近,電解液之流速慢,另一方面,於不溶性陽極與陰極之中間,電解液之流速變快,產生速度差。發現會因該速度差而產生強亂流,相較於先前之電解製箔而言電流密度分佈更均勻化,從而可控制銅箔之結晶粒之分佈。In addition, as another embodiment, continuous unevenness may be formed on the surface of the insoluble anode. In the vicinity of the bumps, the flow rate of the electrolyte is slow. On the other hand, between the insoluble anode and the cathode, the flow rate of the electrolyte becomes faster, resulting in a speed difference. It is found that strong turbulence is generated due to the speed difference, and the current density distribution is more uniform compared to the previous electrolytic foil, so that the distribution of crystal grains in the copper foil can be controlled.

具體而言,沿著陽極之圓周方向空出60 mm之間隔而連續地形成高度為0.5 mm至1.5 mm、寬度為10 mm至70 mm之凸部,藉此產生亂流,容易獲得在200℃下加熱2小時後藉由電子束背向散射繞射法解析剖面時的結晶粒之分佈與前述之本實施形態之表面處理銅箔相同之電解銅箔。Specifically, with an interval of 60 mm along the circumferential direction of the anode, convex portions with a height of 0.5 mm to 1.5 mm and a width of 10 mm to 70 mm are continuously formed to generate turbulent flow, which is easy to obtain at 200°C. After heating for 2 hours, the distribution of crystal grains when the cross-section was analyzed by the electron beam backscattering diffraction method was the same electrolytic copper foil as the surface-treated copper foil of this embodiment described above.

製造電解銅箔時,亦可於電解液105中添加添加劑。添加劑之種類並無特別限定,可列舉:伸乙硫脲、聚乙二醇、四甲基硫脲、聚丙烯醯胺等。此處,藉由增加伸乙硫脲、四甲基硫脲之添加量,可提高常態下之拉伸強度及在220℃下加熱2小時後在常溫下測定之拉伸強度。When manufacturing electrolytic copper foil, additives may be added to the electrolyte 105. The type of additives is not particularly limited, and examples include ethylene thiourea, polyethylene glycol, tetramethyl thiourea, and polypropylene amide. Here, by increasing the addition amount of ethylene thiourea and tetramethyl thiourea, the tensile strength under normal conditions and the tensile strength measured at room temperature after heating at 220°C for 2 hours can be improved.

若常態下之拉伸強度為400 MPa以上且780 MPa以下,則表面處理銅箔之操作性及蝕刻性良好。若常態下之拉伸強度未達400 MPa,則由於表面處理銅箔為薄箔片品,因此有於搬送時產生褶皺而操作性變差之虞。另一方面,若常態下之拉伸強度大於780 MPa,則有於使用電解析出裝置製造銅箔時,析出至鼓之銅箔容易發生箔斷裂而不適於製造之虞。If the tensile strength under normal conditions is 400 MPa or more and 780 MPa or less, the handling and etching properties of the surface-treated copper foil are good. If the tensile strength under normal conditions is less than 400 MPa, since the surface-treated copper foil is a thin foil product, wrinkles may occur during transportation and the workability may deteriorate. On the other hand, if the tensile strength in the normal state is greater than 780 MPa, the copper foil deposited to the drum may be easily broken when the copper foil is manufactured using the electrolytic extraction device and is not suitable for manufacturing.

另外,在220℃下加熱2小時後在常溫下測定之拉伸強度為300 MPa以上時,於將表面處理銅箔與樹脂製基板積層而製造覆銅積層板之步驟中加熱後,結晶粒亦細而蝕刻性良好。若在220℃下加熱2小時後在常溫下測定之拉伸強度未達300 MPa,則會因將表面處理銅箔與樹脂製基板積層而製造覆銅積層板之步驟中之加熱導致結晶粒變大而於蝕刻中不易溶解,因此有蝕刻性降低之虞。In addition, when the tensile strength measured at room temperature after heating at 220°C for 2 hours is 300 MPa or more, the crystal grains are also heated in the step of laminating the surface-treated copper foil and the resin substrate to produce a copper-clad laminate. It is thin and has good etching properties. If the tensile strength measured at room temperature after heating at 220°C for 2 hours does not reach 300 MPa, the crystal grains will change due to the heating in the step of manufacturing the copper-clad laminate by laminating the surface-treated copper foil and the resin substrate. It is large and hard to dissolve in etching, so there is a risk that the etching property will decrease.

此外,電解液105中,亦可添加鉬。藉由添加鉬,可提高銅箔之蝕刻性。通常,電解析出中,電解液105之銅濃度(硫酸銅中未考慮硫酸成分之僅銅之濃度)為13 g/L至72 g/L,電解液105之硫酸濃度為26 g/L至133 g/L,電解液105之液溫為18℃至67℃,電流密度為3 A/dm2 至67 A/dm2 ,處理時間為1秒以上且1分55秒以下。In addition, molybdenum may be added to the electrolyte 105. By adding molybdenum, the etching properties of copper foil can be improved. Generally, in the electrolytic solution, the copper concentration of the electrolyte 105 (the concentration of only copper without considering the sulfuric acid component in copper sulfate) is 13 g/L to 72 g/L, and the sulfuric acid concentration of the electrolyte 105 is 26 g/L to 133 g/L, the temperature of the electrolyte 105 is 18°C to 67°C, the current density is 3 A/dm 2 to 67 A/dm 2 , and the treatment time is 1 second or more and 1 minute 55 seconds or less.

(2)關於電解銅箔之表面處理 >粗化處理> 已知以提高與樹脂製基板之密接性為目的,對電解銅箔之表面實施粗化處理而製成粗化面,但一般而言若為密接性高之粗化處理,則於蝕刻時容易產生根部殘留,蝕刻因數容易降低。本發明者等人進行了努力研究,結果發現,藉由使粗化粒子之頂點略微溶解而頂點之彎曲程度之強度降低(粗化面之頂點曲率算術平均Ssc降低),於蝕刻時不易產生根部殘留而蝕刻因數提高。 使粗化粒子之頂點溶解之方法並無特別限定,可列舉:藉由使用適度之逆電流之脈衝鍍覆使之溶解之方法、於粗化處理之後將銅箔浸漬於硫酸銅水溶液而優先使頂端溶解之方法。(2) About the surface treatment of electrolytic copper foil >Roughening treatment> It is known that for the purpose of improving the adhesion to the resin substrate, the surface of the electrolytic copper foil is roughened to form a roughened surface, but generally speaking, if it is roughened with high adhesion, it is easy to etch. Root residue is generated, and the etching factor is easy to decrease. The inventors conducted diligent studies and found that by slightly dissolving the apex of the roughened particles and reducing the strength of the curvature of the apex (the arithmetic mean Ssc of the apex curvature of the roughened surface is reduced), it is difficult to produce roots during etching. Remains and the etching factor increases. The method of dissolving the apex of the roughened particle is not particularly limited, and examples include: a method of dissolving it by pulse plating using a moderate reverse current, and immersing the copper foil in an aqueous solution of copper sulfate after the roughening treatment. The method of top dissolution.

另外,發現若粗化面之頂點曲率算術平均Ssc為0.7 µm-1 以上且3.8 µm-1 以下,且在200℃下加熱2小時後藉由電子束背向散射繞射法解析剖面時的結晶粒之分佈如上所述(亦即,在200℃下加熱2小時後藉由電子束背向散射繞射法解析剖面時,結晶粒徑為0.5 µm以上之結晶粒中,結晶粒徑為0.5 µm以上且未達1.0 µm之結晶粒之個數之比率R1為0.51以上且0.97以下,結晶粒徑為1.0 µm以上且未達3.0 µm之結晶粒之個數之比率R2為0.03以上且0.42以下,結晶粒徑為3.0 µm以上之結晶粒之個數之比率R3為0,或者在200℃下加熱2小時後藉由電子束背向散射繞射法解析剖面時,結晶粒徑為0.5 µm以上之結晶粒中,結晶粒徑為0.5 µm以上且未達1.0 µm之結晶粒之個數之比率R1為0.51以上且0.97以下,結晶粒徑為1.0 µm以上且未達3.0 µm之結晶粒之個數之比率R2為0.03以上且0.42以下,結晶粒徑為3.0 µm以上之結晶粒之個數之比率R3為超過0且0.07以下),則銅箔之蝕刻因數特異性地上升。In addition, it was found that if the arithmetic mean Ssc of the apex curvature of the roughened surface is 0.7 µm -1 or more and 3.8 µm -1 or less, and it is heated at 200°C for 2 hours, the crystal is analyzed by the electron beam backscatter diffraction method. The distribution of the grains is as described above (that is, when the cross-section is analyzed by electron beam backscatter diffraction method after heating at 200°C for 2 hours, the grain size is 0.5 µm or more in the crystal grains. The ratio R1 of the number of crystal grains above and less than 1.0 µm is 0.51 or more and 0.97 or less, and the ratio R2 of the number of crystal grains above 1.0 µm and less than 3.0 µm is 0.03 or more and 0.42 or less, The ratio R3 of the number of crystal grains with a grain size of 3.0 µm or more is 0, or when the cross-section is analyzed by electron beam backscatter diffraction after heating at 200°C for 2 hours, the crystal grain size is 0.5 µm or more Among the crystal grains, the ratio R1 of the number of crystal grains with a grain size of 0.5 µm or more and less than 1.0 µm is 0.51 or more and 0.97 or less, and the number of crystal grains with a crystal grain size of 1.0 µm or more and less than 3.0 µm If the ratio R2 is 0.03 or more and 0.42 or less, and the ratio R3 of the number of crystal grains with a crystal grain size of 3.0 µm or more is more than 0 and 0.07 or less), the etching factor of the copper foil specifically increases.

可認為這是由銅箔中之縱向(自配線之頂部側朝向底部側之方向)之溶解速度與粗化面中之溶解速度(橫向、亦即配線之寬度方向)之平衡良好所帶來之效果。例如,粗化面之溶解速度(橫向之溶解)較銅箔之溶解速度(縱向之溶解)快時,會產生底切(under cut)(於橫向上粗化面之溶解較銅箔進行得多之狀態)之問題。It can be considered that this is caused by a good balance between the dissolution rate in the vertical direction (the direction from the top side of the wiring to the bottom side) in the copper foil and the dissolution rate in the roughened surface (the horizontal direction, that is, the width direction of the wiring). Effect. For example, when the dissolving speed of the roughened surface (dissolving in the horizontal direction) is faster than that of the copper foil (dissolving in the vertical direction), an undercut will occur (the dissolution of the roughened surface in the horizontal direction is much faster than that of copper foil. The state).

>鎳層、鋅層、鉻酸鹽處理層之形成> 本實施形態之表面處理銅箔中,亦可於藉由粗化處理形成之粗化面上,進而依序形成鎳層、鋅層。 鋅層發揮如下之作用,亦即,將表面處理銅箔與樹脂製基板進行熱壓接時,防止因表面處理銅箔與樹脂製基板之反應所致之樹脂製基板之劣化、表面處理銅箔之表面氧化而提高表面處理銅箔與樹脂製基板之密接性。另外,鎳層防止於將表面處理銅箔與樹脂製基板進行熱壓接時,鋅層之鋅向表面處理銅箔中熱擴散。亦即,鎳層發揮用以使鋅層之上述功能有效地發揮的作為鋅層之基底層之作用。>Formation of nickel layer, zinc layer and chromate treatment layer> In the surface-treated copper foil of this embodiment, it is also possible to form a nickel layer and a zinc layer in order on the roughened surface formed by the roughening treatment. The zinc layer plays the role of preventing the deterioration of the resin substrate caused by the reaction between the surface-treated copper foil and the resin substrate when the surface-treated copper foil and the resin substrate are thermally compressed, and the surface-treated copper foil The surface is oxidized to improve the adhesion between the surface-treated copper foil and the resin substrate. In addition, the nickel layer prevents the zinc in the zinc layer from thermally diffusing into the surface-treated copper foil when the surface-treated copper foil and the resin substrate are thermocompression-bonded. That is, the nickel layer functions as a base layer of the zinc layer for effectively performing the above-mentioned functions of the zinc layer.

再者,該等鎳層、鋅層可應用眾所周知之電解鍍覆法、無電解鍍覆法而形成。另外,該鎳層可由純鎳形成,亦可由含磷鎳合金形成。 另外,若於鋅層上進而進行鉻酸鹽處理,則於表面處理銅箔之表面形成抗氧化層,因此較佳。作為所應用之鉻酸鹽處理,依據眾所周知之方法即可,例如可列舉日本特開昭60-86894號公報中所揭示之方法。藉由使換算為鉻量為0.01 mg/dm2 至0.3 mg/dm2 左右之鉻氧化物及其水合物等附著,可對表面處理銅箔賦予優異之抗氧化功能。Furthermore, the nickel layer and zinc layer can be formed by applying well-known electrolytic plating methods and electroless plating methods. In addition, the nickel layer may be formed of pure nickel, or may be formed of a phosphorus-containing nickel alloy. In addition, if chromate treatment is further performed on the zinc layer, an anti-oxidation layer is formed on the surface of the surface-treated copper foil, which is preferable. As the chromate treatment to be applied, a well-known method may be used. For example, the method disclosed in Japanese Patent Application Laid-Open No. 60-86894 can be cited. By attaching chromium oxide and its hydrates, which are converted to a chromium amount of about 0.01 mg/dm 2 to 0.3 mg/dm 2 , an excellent anti-oxidation function can be imparted to the surface-treated copper foil.

>矽烷處理> 亦可對經鉻酸鹽處理之表面,進而進行使用矽烷偶合劑之表面處理(矽烷處理)。藉由使用矽烷偶合劑之表面處理,會對表面處理銅箔之表面(與樹脂製基板之接合側之表面)賦予與接著劑之親和力強之官能基,因此表面處理銅箔與樹脂製基板之密接性進一步提高,且進一步提高表面處理銅箔之防銹性、吸濕耐熱性。>Silane treatment> The surface treated with chromate can also be treated with silane coupling agent (silane treatment). By using the surface treatment with silane coupling agent, the surface of the surface-treated copper foil (the surface of the bonding side with the resin substrate) is given a functional group that has a strong affinity with the adhesive. Therefore, the surface treatment of the copper foil and the resin substrate The adhesion is further improved, and the rust resistance, moisture absorption and heat resistance of the surface-treated copper foil are further improved.

矽烷偶合劑之種類並無特別限定,可列舉出乙烯系矽烷、環氧系矽烷、苯乙烯系矽烷、甲基丙烯酸系矽烷、丙烯酸系矽烷、胺基系矽烷、脲基系矽烷、氯丙基系矽烷、巰基系矽烷、硫化物系矽烷、異氰酸酯系矽烷等。該等矽烷偶合劑通常製成0.001質量%以上且5質量%以下之濃度之水溶液而使用。將該水溶液塗佈於表面處理銅箔之表面之後進行加熱乾燥,藉此可進行矽烷處理。再者,代替矽烷偶合劑,使用鈦酸酯系、鋯酸酯系等偶合劑,亦可獲得同樣之效果。The type of silane coupling agent is not particularly limited. Examples include vinyl silane, epoxy silane, styrene silane, methacrylic silane, acrylic silane, amino silane, ureido silane, chloropropyl It is silane, mercapto-based silane, sulfide-based silane, isocyanate-based silane, etc. These silane coupling agents are usually used as an aqueous solution with a concentration of 0.001% by mass or more and 5% by mass or less. The aqueous solution is applied to the surface of the surface-treated copper foil and then heated and dried, thereby enabling silane treatment. Furthermore, instead of silane coupling agents, coupling agents such as titanate-based and zirconate-based coupling agents can also be used to obtain the same effect.

(3)關於覆銅積層板、印刷線路板之製造方法 首先,於由玻璃環氧樹脂、聚醯亞胺樹脂等所構成之電絕緣性之樹脂製基板之一表面或兩表面,重疊放置表面處理銅箔。此時,使表面處理銅箔之粗化面與樹脂製基板對向。然後,一面將重疊之樹脂製基板及表面處理銅箔進行加熱,一面施加積層方向之壓力,而使樹脂製基板及表面處理銅箔接合,如此獲得附載體或無載體之覆銅積層板。本實施形態之表面處理銅箔因為常態及加熱後之拉伸強度高,所以即便無載體,亦可充分應對。(3) About the manufacturing method of copper clad laminates and printed circuit boards First, on one or both surfaces of an electrically insulating resin substrate made of glass epoxy resin, polyimide resin, etc., surface-treated copper foils are placed on top of each other. At this time, the roughened surface of the surface-treated copper foil was opposed to the resin substrate. Then, while heating the laminated resin substrate and surface-treated copper foil, pressure in the lamination direction is applied to join the resin substrate and the surface-treated copper foil to obtain a copper-clad laminate with or without a carrier. Since the surface-treated copper foil of this embodiment has high tensile strength in normal conditions and after heating, it can be adequately dealt with even without a carrier.

接下來,對覆銅積層板之銅箔表面照射CO2 氣體雷射而進行開孔。亦即,對銅箔之形成有雷射吸收層之面照射CO2 氣體雷射,而進行形成貫通表面處理銅箔及樹脂製基板之貫通孔之開孔加工。然後,藉由常規方法於表面處理銅箔形成高密度配線電路等電路,如此可獲得印刷線路板。Next, the surface of the copper foil of the copper clad laminate is irradiated with a CO 2 gas laser to make holes. That is, the surface of the copper foil on which the laser absorption layer is formed is irradiated with a CO 2 gas laser to form a through hole that penetrates the surface-treated copper foil and the resin substrate. Then, a circuit such as a high-density wiring circuit is formed on the surface-treated copper foil by a conventional method, so that a printed circuit board can be obtained.

[實施例] 以下,表示實施例及比較例,更具體地說明本發明。 (A)電解銅箔之製造 使用圖1所示之電解析出裝置,將硫酸-硫酸銅水溶液作為電解液,藉由如以下之操作製造電解銅箔。亦即,藉由於陽極及與該陽極對向設置之陰極鼓之間供給電解液,一邊對電解液中通入空氣並以固定速度旋轉陰極鼓,一邊於陽極與陰極鼓之間接通直流電流,從而使銅析出至陰極鼓表面上。然後,將所析出之銅自陰極鼓之表面剝離,連續地捲取,藉此製造電解銅箔。[Example] Hereinafter, examples and comparative examples are shown to explain the present invention more specifically. (A) Manufacturing of electrolytic copper foil Using the electrolytic extraction device shown in FIG. 1, the sulfuric acid-copper sulfate aqueous solution was used as the electrolyte, and the electrolytic copper foil was manufactured by the following operations. That is, since the electrolyte is supplied between the anode and the cathode drum disposed opposite to the anode, while air is introduced into the electrolyte and the cathode drum is rotated at a fixed speed, a direct current is applied between the anode and the cathode drum, As a result, copper is deposited on the surface of the cathode drum. Then, the deposited copper is peeled off from the surface of the cathode drum and continuously wound up, thereby manufacturing an electrolytic copper foil.

電解液中之銅濃度、硫酸濃度、氯濃度如表1所示。實施例1至實施例14及比較例1至比較例5中之一部分中,如表1所示,於電解液中添加作為添加劑之伸乙硫脲、聚乙二醇、四甲基硫脲、及膠(分子量20000)中之2種,該等添加劑之濃度如表1所示。另外,製造電解銅箔時之電解液之溫度、電流密度、空氣之通入流量如表1所示。進而,實施例13、實施例14中,沿著陽極之圓周方向空出60 mm之間隔而連續地形成高度為1.0 mm、寬度為60 mm之凸部。The copper concentration, sulfuric acid concentration, and chlorine concentration in the electrolyte are shown in Table 1. In a part of Example 1 to Example 14 and Comparative Example 1 to Comparative Example 5, as shown in Table 1, as additives, ethylene thiourea, polyethylene glycol, tetramethyl thiourea, And 2 kinds of glue (molecular weight 20000), the concentration of these additives is shown in Table 1. In addition, the temperature, current density, and air flow rate of the electrolyte during the manufacture of electrolytic copper foil are shown in Table 1. Furthermore, in Example 13 and Example 14, the protrusions having a height of 1.0 mm and a width of 60 mm were continuously formed at intervals of 60 mm along the circumferential direction of the anode.

[表1]

Figure 108114061-A0304-0001
[Table 1]
Figure 108114061-A0304-0001

(B)粗化處理 接下來,對電解銅箔之S面或M面(參照表2)實施將表面製成粗化面之粗化處理,製造表面處理銅箔。具體而言,實施使微細之銅粒子電沈積至電解銅箔之表面之電鍍(脈衝鍍覆)作為粗化處理,藉此製成由銅粒子形成有微細凹凸之粗化面。用於電鍍之鍍覆液含有銅、硫酸、鉬、鎳,銅濃度、硫酸濃度、鉬濃度、鎳濃度如表2所示。(B) Coarse treatment Next, the S surface or the M surface (refer to Table 2) of the electrolytic copper foil was subjected to a roughening treatment to make the surface a roughened surface to produce a surface-treated copper foil. Specifically, electroplating (pulse plating) in which fine copper particles are electrodeposited on the surface of the electrolytic copper foil is performed as a roughening treatment, thereby forming a roughened surface with fine irregularities formed by the copper particles. The plating solution used for electroplating contains copper, sulfuric acid, molybdenum, and nickel. The copper concentration, sulfuric acid concentration, molybdenum concentration, and nickel concentration are shown in Table 2.

另外,粗化處理、亦即脈衝鍍覆之條件(實施有粗化處理之面(處理面)、電解條件、鍍覆處理時間、鍍覆液之溫度)示於表2。於表2中之電解條件下,Ion1表示第1階段之脈衝電流密度,Ion2表示第2階段之脈衝電流密度,ton1表示第1階段之脈衝電流施加時間,ton2表示第2階段之脈衝電流施加時間,toff表示將第2階段之脈衝電流與第1階段之脈衝電流之間之電流設為0之時間。In addition, the conditions of the roughening treatment, that is, the pulse plating (the surface to be roughened (treated surface), electrolysis conditions, plating treatment time, and plating solution temperature) are shown in Table 2. Under the electrolysis conditions in Table 2, Ion1 represents the pulse current density at the first stage, Ion2 represents the pulse current density at the second stage, ton1 represents the pulse current application time at the first stage, and ton2 represents the pulse current application time at the second stage , Toff represents the time to set the current between the pulse current in the second stage and the pulse current in the first stage to zero.

此外,關於實施例11、實施例12及比較例1,實施通常之電鍍,而並非脈衝鍍覆。表2中之電解條件下,I係實施例11、實施例12及比較例1中所實施之電鍍之電流密度。 進而,關於實施例11、實施例12,將所獲得之表面處理銅箔進而浸漬於硫酸銅浴(硫酸銅水溶液),藉此使形成於電解銅箔之表面之微細之凸部之頂點溶解而變圓,調整粗化面之頂點曲率算術平均Ssc。硫酸銅浴之銅濃度、硫酸濃度、浸漬時間如表2所示。In addition, regarding Example 11, Example 12, and Comparative Example 1, normal plating was performed instead of pulse plating. Under the electrolysis conditions in Table 2, I is the current density of the electroplating implemented in Example 11, Example 12 and Comparative Example 1. Furthermore, regarding Example 11 and Example 12, the obtained surface-treated copper foil was further immersed in a copper sulfate bath (copper sulfate aqueous solution), thereby dissolving the apexes of the fine protrusions formed on the surface of the electrolytic copper foil. Round, adjust the arithmetic mean Ssc of the vertex curvature of the roughened surface. The copper concentration, sulfuric acid concentration, and immersion time of the copper sulfate bath are shown in Table 2.

[表2]

Figure 108114061-A0304-0002
[Table 2]
Figure 108114061-A0304-0002

(C)鎳層(基底層)之形成 接下來,對表面處理銅箔之粗化面於下述所示之Ni鍍覆條件下進行電解鍍覆,藉此形成鎳層(Ni之附著量0.06 mg/dm2 )。用於鎳鍍覆之鍍覆液含有硫酸鎳、過硫酸銨((NH4 )2 S2 O8 )、硼酸(H3 BO3 ),鎳濃度為5.0 g/L,過硫酸銨濃度為40.0 g/L,硼酸濃度為28.5 g/L。另外,鍍覆液之溫度為28.5℃,pH為3.8,電流密度為1.5 A/dm2 ,鍍覆處理時間為1秒至2分鐘。(C) Formation of nickel layer (base layer) Next, electrolytic plating is performed on the roughened surface of the surface-treated copper foil under the Ni plating conditions shown below, thereby forming a nickel layer (Ni deposit 0.06 mg/dm 2 ). The plating solution for nickel plating contains nickel sulfate, ammonium persulfate ((NH 4 ) 2 S 2 O 8 ), boric acid (H 3 BO 3 ), the concentration of nickel is 5.0 g/L, and the concentration of ammonium persulfate is 40.0 g/L, the concentration of boric acid is 28.5 g/L. In addition, the temperature of the plating solution is 28.5°C, the pH is 3.8, the current density is 1.5 A/dm 2 , and the plating treatment time is 1 second to 2 minutes.

(D)鋅層(耐熱處理層)之形成 進而,於鎳層上於下述所示之Zn鍍覆條件下進行電解鍍覆,藉此形成鋅層(Zn之附著量0.05 mg/dm2 )。用於鋅鍍覆之鍍覆液含有硫酸鋅七水合物、氫氧化鈉,鋅濃度為1 g/L至30 g/L,氫氧化鈉濃度為10 g/L至300 g/L。另外,鍍覆液之溫度為5℃至60℃,電流密度為0.1 A/dm2 至10 A/dm2 ,鍍覆處理時間為1秒至2分鐘。(D) Formation of zinc layer (heat-resistant treatment layer) Furthermore, electrolytic plating is performed on the nickel layer under the Zn plating conditions shown below, thereby forming a zinc layer (the adhesion amount of Zn is 0.05 mg/dm 2 ) . The plating solution used for zinc plating contains zinc sulfate heptahydrate and sodium hydroxide. The concentration of zinc is 1 g/L to 30 g/L, and the concentration of sodium hydroxide is 10 g/L to 300 g/L. In addition, the temperature of the plating solution is 5°C to 60°C, the current density is 0.1 A/dm 2 to 10 A/dm 2 , and the plating treatment time is 1 second to 2 minutes.

(E)鉻酸鹽處理層(防銹處理層)之形成 進而,於鋅層上於下述所示之Cr鍍覆條件下進行電解鍍覆,藉此形成鉻酸鹽處理層(Cr之附著量0.02 mg/dm2 )。用於鉻鍍覆之鍍覆液含有鉻酸酐(CrO3 ),鉻濃度為2.5 g/L。另外,鍍覆液之溫度為15℃至45℃,pH為2.5,電流密度為0.5 A/dm2 ,鍍覆處理時間為1秒至2分鐘。(E) Formation of chromate treatment layer (anti-rust treatment layer) Furthermore, electrolytic plating is performed on the zinc layer under the Cr plating conditions shown below, thereby forming a chromate treatment layer (Cr adhesion The amount is 0.02 mg/dm 2 ). The plating solution used for chromium plating contains chromic anhydride (CrO 3 ) with a chromium concentration of 2.5 g/L. In addition, the temperature of the plating solution is 15°C to 45°C, the pH is 2.5, the current density is 0.5 A/dm 2 , and the plating treatment time is 1 second to 2 minutes.

(F)矽烷偶合劑層之形成 進而,進行下述所示之處理,於鉻酸鹽處理層上形成矽烷偶合劑層。亦即,於矽烷偶合劑水溶液中添加甲醇或乙醇,調整為預定之pH,獲得處理液。將該處理液塗佈於表面處理銅箔之鉻酸鹽處理層,保持預定時間後,利用熱風進行乾燥,藉此形成矽烷偶合劑層。(F) Formation of silane coupling agent layer Furthermore, the following treatment was performed to form a silane coupling agent layer on the chromate treatment layer. That is, methanol or ethanol is added to the silane coupling agent aqueous solution and adjusted to a predetermined pH to obtain a treatment solution. The treatment liquid is applied to the chromate treatment layer of the surface-treated copper foil, and after keeping it for a predetermined time, it is dried with hot air, thereby forming a silane coupling agent layer.

(G)評價 如上所述,分別製造實施例1至實施例14及比較例1至比較例5之表面處理銅箔。該等表面處理銅箔之箔厚如表3所記載。針對所獲得之各表面處理銅箔,進行各種評價。(G) Evaluation As described above, the surface-treated copper foils of Example 1 to Example 14 and Comparative Example 1 to Comparative Example 5 were respectively manufactured. The foil thickness of these surface-treated copper foils is shown in Table 3. Various evaluations were performed for each of the obtained surface-treated copper foils.

>拉伸強度> 將以上述方式獲得之實施例1至實施例14及比較例1至比較例5之表面處理銅箔,切成寬度12.7 mm、長度130 mm之短條狀,作為拉伸試片。藉由依據IPC-TM-650之方法,測定常態下之拉伸試片之拉伸強度。作為測定裝置,使用Instron公司之1122型拉伸試驗機,測定溫度係設為常溫。 另外,將拉伸試片在220℃下加熱2小時後,自然冷卻至常溫。針對賦予此種熱歷程後之拉伸試片,以與常態下之拉伸強度相同之方式測定拉伸強度。結果如表3所示。>Tensile Strength> The surface-treated copper foils of Examples 1 to 14 and Comparative Examples 1 to 5 obtained in the above manner were cut into short strips with a width of 12.7 mm and a length of 130 mm as tensile test pieces. Measure the tensile strength of the tensile test piece under normal conditions by the method according to IPC-TM-650. As the measuring device, a 1122 tensile tester made by Instron was used, and the measuring temperature was set to normal temperature. In addition, after heating the tensile test piece at 220°C for 2 hours, it was naturally cooled to normal temperature. The tensile strength of the tensile test piece after the thermal history is given is measured in the same way as the tensile strength under normal conditions. The results are shown in Table 3.

>蝕刻因數> 藉由減成法,於實施例1至實施例14及比較例1至比較例5之表面處理銅箔上,形成L&S為30 µm/30 µm之抗蝕劑圖案。然後,進行蝕刻而形成配線圖案。作為抗蝕劑,使用乾式抗蝕劑膜,作為蝕刻液,使用含有氯化銅及鹽酸之混合液。然後,測定所獲得之配線圖案之蝕刻因數(Ef)。所謂蝕刻因數,係指將銅箔之箔厚設為H,將所形成之配線圖案之底部寬度設為B,將所形成之配線圖案之頂部寬度設為T時,以下式表示之值。 Ef=2H/(B-T) 本實施例及比較例中,蝕刻因數為2.5以上之試片係設為良品,未達2.5之試片係設為不良品。>Etching Factor> By the subtractive method, a resist pattern with an L&S of 30 µm/30 µm was formed on the surface-treated copper foils of Example 1 to Example 14 and Comparative Example 1 to Comparative Example 5. Then, etching is performed to form a wiring pattern. As the resist, a dry resist film was used, and as the etching solution, a mixed solution containing copper chloride and hydrochloric acid was used. Then, the etching factor (Ef) of the obtained wiring pattern was measured. The etching factor refers to the value expressed by the following formula when the thickness of the copper foil is set to H, the bottom width of the formed wiring pattern is set to B, and the top width of the formed wiring pattern is set to T. Ef=2H/(B-T) In the present embodiment and the comparative example, the test piece with an etching factor of 2.5 or more is regarded as a good product, and the test piece with an etching factor of less than 2.5 is regarded as a defective product.

若蝕刻因數小,則配線圖案中之側壁之垂直性崩塌,線寬窄之微細配線圖案時,有於鄰接之配線圖案之間產生銅箔之溶解殘留而發生短路之危險性、導致斷線之危險性。於本試驗中,針對成為適時蝕刻位置(抗蝕劑端部之位置與配線圖案之底部之位置對齊)時之配線圖案,利用顯微鏡測定底部寬度B及頂部寬度T,算出蝕刻因數。結果如表3所示。If the etching factor is small, the verticality of the sidewalls in the wiring pattern will collapse. In the case of fine wiring patterns with narrow line widths, there is a risk of dissolving copper foil between adjacent wiring patterns, causing a short circuit, and causing the risk of disconnection. sex. In this experiment, the bottom width B and top width T are measured with a microscope for the wiring pattern when it becomes the timely etching position (the position of the resist end is aligned with the position of the bottom of the wiring pattern), and the etching factor is calculated. The results are shown in Table 3.

[密接性] 在銅箔的粗化面接合樹脂製基板,製作出測定用樣品。樹脂製基板使用市售的聚苯醚系樹脂(松下股份有限公司製造的超低傳輸損耗多層基板材料MEGTRON6),接合時的硬化溫度為210℃,硬化時間為2小時。[Adhesion] A resin substrate was bonded to the roughened surface of the copper foil to produce a sample for measurement. The resin substrate uses a commercially available polyphenylene ether resin (the ultra-low transmission loss multilayer substrate material MEGTRON6 manufactured by Matsushita Co., Ltd.). The curing temperature during bonding is 210°C and the curing time is 2 hours.

將所製作的測定用樣品之銅箔蝕刻加工成寬度10 mm的電路配線後,利用雙面膠帶將樹脂製基板側固定在不鏽鋼板上,以50 mm/分鐘的速度將電路配線沿90度方向拉伸而剝離,測定密接性(kN/m)。密接性之測定係使用萬能材料試驗機(A&D股份有限公司製造的Tensilon)進行。 本實施例及比較例中,將密接性為0.4 kN/m以上之情形設為良品,將未達0.4 kN/m之情形設為不良品。After etching the copper foil of the prepared measurement sample into a circuit wiring with a width of 10 mm, fix the resin substrate side to the stainless steel plate with a double-sided tape, and move the circuit wiring in a 90-degree direction at a speed of 50 mm/min. It was stretched and peeled, and the adhesiveness (kN/m) was measured. The adhesion is measured using a universal material testing machine (Tensilon manufactured by A&D Co., Ltd.). In the present example and the comparative example, the case where the adhesion is 0.4 kN/m or more is regarded as a good product, and the case where the adhesion is less than 0.4 kN/m is regarded as a defective product.

[操作性:褶皺不良數] 將實施例1至實施例14及比較例1至比較例5之表面處理銅箔切成一邊200 mm之正方形狀,加壓接合於基板FR4,製作覆銅積層板。接合之條件係溫度170℃、壓力1.5 MPa、加壓時間1小時。針對各表面處理銅箔,分別製作30片覆銅積層板,以目視確認銅箔之褶皺,計數於銅箔產生褶皺之覆銅積層板之數量(褶皺不良數)。藉由褶皺不良數,評價表面處理銅箔之操作性。褶皺不良數為3片以下時設為合格,為4片以上時設為不合格。結果如表3所示。[Operability: Number of defective wrinkles] The surface-treated copper foils of Example 1 to Example 14 and Comparative Example 1 to Comparative Example 5 were cut into a square shape with a side of 200 mm, and pressure-bonded to the substrate FR4 to produce a copper-clad laminate. The bonding conditions are 170°C temperature, 1.5 MPa pressure, and pressure time 1 hour. For each surface-treated copper foil, 30 pieces of copper-clad laminates were produced, and the wrinkles of the copper foil were visually confirmed, and the number of copper-clad laminates that produced wrinkles on the copper foil (the number of defective wrinkles) was counted. The operability of the surface-treated copper foil was evaluated by the number of defective wrinkles. When the number of wrinkle defects was 3 or less, it was regarded as pass, and when it was 4 or more, it was regarded as unacceptable. The results are shown in Table 3.

[頂點曲率算術平均Ssc、Rpm] 使用BRUKER公司之三維白色光干涉型顯微鏡Wyko ContourGT-K,測定實施例1至實施例14及比較例1至比較例5之表面處理銅箔之粗化面之表面形狀,進行形狀解析,求出頂點曲率算術平均Ssc及Rpm。形狀解析係使用高分辨率CCD(charge coupled device,電荷耦合器件)相機以VSI(Virtual Switch Interface,虛擬交換接口)測定方式進行。條件係設為光源為白色光、測定倍率為10倍、測定範圍為477 µm×357.8 µm、橫向取樣(Lateral Sampling)為0.38 µm、速度(speed)為1、回溯掃描高度(Backscan)為10 µm、長度(Length)為10 µm、閾值(Threshold)為3%,進行項目移除(Terms Removal) (Cylinder and Tilt)、資料恢復(Data Restore)(方法:legacy、迭代(iterations) 5)、統計過濾(Statistic Filter)(過濾尺寸(Filter Size):3、過濾類型(Filter Type):中值(Median))之過濾處理之後,進行資料處理。結果如表3所示。[Arithmetic mean of vertex curvature Ssc, Rpm] Using the three-dimensional white light interference microscope Wyko ContourGT-K of BRUKER, the surface shape of the roughened surface of the surface-treated copper foil of Example 1 to Example 14 and Comparative Example 1 to Comparative Example 5 was measured, and shape analysis was performed to obtain The arithmetic mean Ssc and Rpm of vertex curvature. The shape analysis system uses a high-resolution CCD (charge coupled device) camera with a VSI (Virtual Switch Interface) measurement method. The conditions are as follows: the light source is white light, the measurement magnification is 10 times, the measurement range is 477 µm×357.8 µm, the lateral sampling (Lateral Sampling) is 0.38 µm, the speed (speed) is 1, the backscan height (Backscan) is 10 µm , Length is 10 µm, Threshold is 3%, item removal (Terms Removal) (Cylinder and Tilt), data recovery (Data Restore) (method: legacy, iteration (iterations) 5), statistics After filtering (Statistic Filter) (Filter Size: 3, Filter Type: Median), data processing is performed. The results are shown in Table 3.

[結晶粒之分佈] 使用TSL Solutions股份有限公司之EBSD(Electron Back Scatter Diffraction,電子束背向散射繞射)相機Hikari/DC5.2/A5.2及日本電子股份有限公司(JEOL)之掃描式電子顯微鏡JSM-7001FA,於倍率5000倍、電子束步進量(beam step) 0.05之條件下,測定表面處理銅箔之粗化面之結晶粒。利用EBSD之結晶粒之測定中,設為方位差15°以上之結晶粒界,且將由結晶粒界包圍之區域設為結晶粒。[Distribution of crystal grains] Using the EBSD (Electron Back Scatter Diffraction) camera Hikari/DC5.2/A5.2 of TSL Solutions Co., Ltd. and the scanning electron microscope JSM-7001FA of JEOL, Measure the crystal grains of the roughened surface of the surface-treated copper foil under the conditions of 5000 times magnification and 0.05 beam step. In the measurement of crystal grains by EBSD, a crystal grain boundary with an azimuth difference of 15° or more is set, and the area surrounded by the crystal grain boundary is a crystal grain.

此時,對表面處理銅箔之切斷面進行CP(Cross Section Polisher,截面拋光儀)研磨,對該研磨面中圖2所示之範圍之部分進行EBSD之測定。亦即,將表面處理銅箔之箔厚設為t時,如圖2所示,對與粗化面之相反側之面接觸之縱(厚度方向之長度)0.8 t、橫(與厚度方向正交之方向之長度)1.6 t之矩形之範圍,進行EBSD之測定。例如,箔厚t為10 µm時,成為縱8.0 µm、橫16.0 µm之矩形之範圍,箔厚t為6 µm時,成為縱4.8 µm、橫9.6 µm之矩形之範圍,箔厚t為4 µm時,成為縱3.2 µm、橫6.4 µm之矩形之範圍。 基於EBSD(電子束背向散射繞射法)之GRAIN SIZE之資料,算出前述之結晶粒之比率R1、R2、R3。結果如表3所示。At this time, the cut surface of the surface-treated copper foil was polished by CP (Cross Section Polisher), and the portion of the polished surface in the range shown in Figure 2 was measured by EBSD. That is, when the foil thickness of the surface-treated copper foil is set to t, as shown in Figure 2, the vertical (length in the thickness direction) contacting the surface on the opposite side of the roughened surface is 0.8 t and the horizontal (normal to the thickness direction) The length of the cross direction) 1.6 t rectangle range, carry out the EBSD measurement. For example, when the foil thickness t is 10 µm, it becomes a rectangular range of 8.0 µm in length and 16.0 µm in width, and when the foil thickness t is 6 µm, it becomes a rectangular range of 4.8 µm in length and 9.6 µm in width, and the foil thickness t is 4 µm. At this time, it becomes a rectangular area with a length of 3.2 µm and a width of 6.4 µm. Based on the data of GRAIN SIZE of EBSD (Electron Beam Backscattering Diffraction), calculate the ratio of the aforementioned crystal grains R1, R2, R3. The results are shown in Table 3.

[表3]

Figure 108114061-A0304-0003
[table 3]
Figure 108114061-A0304-0003

比較例1係於已知之製箔條件(日本專利第4583149號公報之實施例2)下所製造之銅箔,但由於結晶粒之個數之比率R3大,因此蝕刻因數(Ef)小,無法使L&S變細。 比較例2與實施例3相比通入流量小,因此結晶粒之個數之比率R2、R3變大,無法使L&S變細。Comparative Example 1 is a copper foil manufactured under the known foil manufacturing conditions (Example 2 of Japanese Patent No. 4583149). However, since the ratio R3 of the number of crystal grains is large, the etching factor (Ef) is small and cannot Make L&S thinner. Compared with Example 3, Comparative Example 2 has a lower inlet flow rate. Therefore, the ratio of the number of crystal grains R2 and R3 becomes larger, and L&S cannot be made finer.

比較例3由於通入流量過大,因此結晶粒之個數之比率R1變大,無法使L&S變細。 比較例4與實施例1相比,未以粗化處理之脈衝電流施加逆電流而粗化粒子未溶解,因此蝕刻因數降低。 比較例5由於粗化處理之電流大,因此粗化粒子變得粗大,由此導致於蝕刻時容易產生根部殘留,蝕刻因數降低。In Comparative Example 3, since the inlet flow rate was too large, the ratio R1 of the number of crystal grains became large, and the L&S could not be made finer. Compared with Example 1, in Comparative Example 4, the reverse current was not applied with the pulse current of the roughening treatment, and the roughened particles were not dissolved, so the etching factor was lowered. In Comparative Example 5, since the current of the roughening treatment was large, the roughened particles became coarse, which caused root residues to be easily generated during etching, and the etching factor was reduced.

101‧‧‧電解銅箔 102‧‧‧陰極鼓 103‧‧‧拋光輪 104‧‧‧不溶性陽極 105‧‧‧電解液 101‧‧‧Electrolytic Copper Foil 102‧‧‧Cathode drum 103‧‧‧Polishing wheel 104‧‧‧Insoluble anode 105‧‧‧Electrolyte

圖1係說明使用電解析出裝置製造電解銅箔之方法之圖。 圖2係說明結晶粒之分佈之測定方法之圖。Fig. 1 is a diagram illustrating a method of manufacturing an electrolytic copper foil using an electrolytic extraction device. Figure 2 is a diagram illustrating the method for measuring the distribution of crystal grains.

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Claims (7)

一種表面處理銅箔,其係於表面具有利用粗化處理形成之粗化面之表面處理銅箔,且箔厚為10μm以下,前述粗化面之頂點曲率算術平均Ssc為0.7μm-1以上且3.8μm-1以下,在200℃下加熱2小時後藉由電子束背向散射繞射法解析剖面時,結晶粒徑為0.5μm以上之結晶粒中,結晶粒徑為0.5μm以上且未達1.0μm之結晶粒之個數之比率R1為0.51以上且0.97以下,結晶粒徑為1.0μm以上且未達3.0μm之結晶粒之個數之比率R2為0.03以上且0.42以下,結晶粒徑為3.0μm以上之結晶粒之個數之比率R3為0.07以下。 A surface-treated copper foil, which is a surface-treated copper foil having a roughened surface formed by roughening treatment on the surface, and the foil thickness is 10 μm or less, and the arithmetic mean Ssc of the apex curvature of the roughened surface is 0.7 μm -1 or more and 3.8μm -1 or less, when the cross-section is analyzed by electron beam backscattering diffraction method after heating at 200°C for 2 hours, the crystal grain size is 0.5μm or more, and the crystal grain size is 0.5μm or more and less than The ratio R1 of the number of crystal grains of 1.0 μm is 0.51 or more and 0.97 or less, the ratio of the number of crystal grains of 1.0 μm or more and less than 3.0 μm R2 is 0.03 or more and 0.42 or less, and the crystal particle size is The ratio R3 of the number of crystal grains of 3.0 μm or more is 0.07 or less. 如請求項1所述之表面處理銅箔,其中,前述粗化面之頂點曲率算術平均Ssc為1.0μm-1以上且2.5μm-1以下,前述比率R1為0.59以上且0.96以下,前述比率R2為0.04以上且0.41以下,前述比率R3為0。 The surface-treated copper foil according to claim 1, wherein the arithmetic mean Ssc of the apex curvature of the roughened surface is 1.0 μm -1 or more and 2.5 μm -1 or less, the aforementioned ratio R1 is 0.59 or more and 0.96 or less, and the aforementioned ratio R2 It is 0.04 or more and 0.41 or less, and the aforementioned ratio R3 is zero. 如請求項1所述之表面處理銅箔,其中,前述粗化面之Rpm為0.5μm以上且3.5μm以下。 The surface-treated copper foil according to claim 1, wherein the Rpm of the roughened surface is 0.5 μm or more and 3.5 μm or less. 如請求項2所述之表面處理銅箔,其中,前述粗化面之Rpm為0.5μm以上且3.5μm以下。 The surface-treated copper foil according to claim 2, wherein the Rpm of the roughened surface is 0.5 μm or more and 3.5 μm or less. 如請求項1至4中任一項所述之表面處理銅箔,其中,在常態下之拉伸強度為400MPa以上且 780MPa以下,在220℃下加熱2小時後在常溫下測定之拉伸強度為300MPa以上。 The surface-treated copper foil according to any one of claims 1 to 4, wherein the tensile strength under normal conditions is 400 MPa or more and 780MPa or less, the tensile strength measured at room temperature after heating at 220°C for 2 hours is 300MPa or more. 一種覆銅積層板,其具備如申請專利範圍第1至5項中任一項所述之表面處理銅箔、及積層於該表面處理銅箔之粗化面之樹脂製基板。 A copper-clad laminated board comprising the surface-treated copper foil described in any one of items 1 to 5 in the scope of the patent application, and a resin substrate laminated on the roughened surface of the surface-treated copper foil. 一種印刷線路板,其具備如申請專利範圍第6項所述之覆銅積層板。 A printed circuit board is provided with a copper clad laminate as described in item 6 of the scope of patent application.
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