TWI699280B - Surface-treated copper foil and copper-clad laminate or printed wiring board manufactured using the surface-treated copper foil - Google Patents
Surface-treated copper foil and copper-clad laminate or printed wiring board manufactured using the surface-treated copper foil Download PDFInfo
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- TWI699280B TWI699280B TW105125564A TW105125564A TWI699280B TW I699280 B TWI699280 B TW I699280B TW 105125564 A TW105125564 A TW 105125564A TW 105125564 A TW105125564 A TW 105125564A TW I699280 B TWI699280 B TW I699280B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/06—Wires; Strips; Foils
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/389—Improvement of the adhesion between the insulating substrate and the metal by the use of a coupling agent, e.g. silane
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2310/00—Treatment by energy or chemical effects
- B32B2310/04—Treatment by energy or chemical effects using liquids, gas or steam
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/08—PCBs, i.e. printed circuit boards
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Abstract
本發明提供表面處理銅箔等,其適用於能夠支持支持高頻化資訊通信設備之高性能化及高功能化之包銅層壓板或印刷配線板。 The present invention provides surface-treated copper foils, etc., which are suitable for copper-clad laminates or printed wiring boards that can support high-performance and high-functionality of high-frequency information communication equipment.
本發明之表面處理銅箔(M)用於利用與介電常數2.6至4.0之第一樹脂基材(B1)之層壓黏合形成包銅層壓板,其於與第一樹脂基材(B1)之貼合面具有滿足下述所示條件1之表面處理層。 The surface-treated copper foil (M) of the present invention is used to form a copper-clad laminate by lamination and bonding with a first resin substrate (B1) with a dielectric constant of 2.6 to 4.0, which is used with the first resin substrate (B1) The bonding surface has a surface treatment layer that satisfies the condition 1 shown below.
附記 Supplement
條件1:於利用蝕刻從該包銅層壓板使銅箔部分全部溶解而得到之第一樹脂基材(B1)之表面上層壓黏合第二樹脂基材(B2)時,第一樹脂基材(B1)與第二樹脂基材(B2)之黏合界面(S)之界面高度(H)係0.15至0.85μm,存在於黏合界面(S)之凹凸數於每2.54μm寬度中係11至30個。 Condition 1: When the second resin substrate (B2) is laminated and bonded on the surface of the first resin substrate (B1) obtained by dissolving the copper foil part from the copper-clad laminate by etching, the first resin substrate ( B1) The interface height (H) of the bonding interface (S) with the second resin substrate (B2) is 0.15 to 0.85μm, and the number of concavities and convexities present in the bonding interface (S) is 11 to 30 per 2.54μm width .
Description
本發明係有關於表面處理銅箔以及使用該表面處理銅箔製造之包銅層壓板或印刷配線板,該表面處理銅箔適用於例如無線雷達、高速運算機、可攜式設備等高頻基板,特別適用於伺服器等。 The present invention relates to a surface-treated copper foil and a copper-clad laminate or printed wiring board manufactured using the surface-treated copper foil. The surface-treated copper foil is suitable for high-frequency substrates such as wireless radars, high-speed computing machines, and portable devices. , Especially suitable for servers, etc.
近年來,隨著電腦、資訊通信設備之高性能化及高功能化,乃至網路化之發展,為了以高速對大容量資訊進行傳遞處理,存在信號逐漸高頻化之趨勢。這種資訊通信設備使用包銅層壓板。包銅層壓板對絕緣基板(樹脂基板)與銅箔加熱加壓製作而成。 In recent years, with the advancement of high-performance and high-functionality of computers and information communication equipment, and even the development of networking, in order to transmit and process large-capacity information at high speeds, there is a tendency for signals to gradually increase in frequency. This kind of information communication equipment uses a copper-clad laminate. The copper-clad laminate is made by heating and pressing an insulating substrate (resin substrate) and copper foil.
通常構成支持高頻包銅層壓板之絕緣基板必須使用介電特性優秀之樹脂,但是存在以下趨勢,即相對介電常數及介質損耗角正切較低之樹脂中,有助於與銅箔黏合之極性較高之官能團較少,與銅箔之黏合特性降低。 Generally, insulating substrates supporting high-frequency copper-clad laminates must use resins with excellent dielectric properties. However, there is a trend that resins with lower relative permittivity and dielectric loss tangent help to bond with copper foil There are fewer functional groups with higher polarity, and the adhesion to copper foil is reduced.
此外,要求支持高頻包銅層壓板用之作為導電層之銅箔盡可能減小表面粗糙度。要求這種銅箔之低輪廓性化係因為,隨著高頻化電流集中流向銅箔之表面部分,而且存在銅箔之表面粗糙度越大傳輸損耗越大之趨勢。 In addition, it is required to reduce the surface roughness of the copper foil used as a conductive layer for supporting high frequency copper clad laminates as much as possible. The low profile of the copper foil is required because the current concentrates on the surface of the copper foil as the high frequency current flows, and there is a tendency that the greater the surface roughness of the copper foil, the greater the transmission loss.
為了改善對構成包銅層壓板之銅箔絕緣基板之黏附性,通常於銅箔基體上形成利用粗化顆粒之電沉積形成之粗面化層,並利用物理效應(固著效應)提高附著力。如果增大高低差(表面粗糙度),則附著力提高,但是儘管傳輸損耗因該理由而增加,現狀係優先利用銅箔基體上形成之粗面化層之粗化顆粒來確保附著力,允許粗面化導致傳輸損耗一定程度之降低。但是近年來支持頻率20GHz以上之次世代高頻電路基板之開發不斷發展,要求該基板比過去進一步降低傳輸損耗。 In order to improve the adhesion to the copper foil insulating substrate constituting the copper-clad laminate, a roughened layer formed by electrodeposition of roughened particles is usually formed on the copper foil substrate, and the physical effect (fixation effect) is used to improve the adhesion . If the height difference (surface roughness) is increased, the adhesion will increase. However, although the transmission loss increases for this reason, the current situation is to preferentially use the roughened particles of the roughened layer formed on the copper foil substrate to ensure the adhesion. The roughening leads to a certain degree of reduction in transmission loss. However, in recent years, the development of next-generation high-frequency circuit boards that support frequencies above 20 GHz has continued to develop, and the boards are required to further reduce transmission loss than in the past.
通常為了降低傳輸損耗,優選為例如使用減小粗面化層之微細表面凹凸之高低差(表面粗糙度)之表面處理銅箔、或不進行粗面化處理之無粗化平滑銅箔,此外,為了確保這種表面粗糙度較小之銅箔之黏附性,優選為於銅箔與絕緣基板之間形成具有化學鍵之矽烷偶合劑層。 In general, in order to reduce transmission loss, it is preferable to use, for example, a surface-treated copper foil that reduces the difference in height (surface roughness) of the fine surface irregularities of the roughened layer, or a non-roughened smooth copper foil without roughening treatment. In order to ensure the adhesion of the copper foil with small surface roughness, it is preferable to form a silane coupling agent layer with a chemical bond between the copper foil and the insulating substrate.
使用該銅箔製造高頻電路基板時,除了上述黏附性及傳輸特性外,近年來還需要考慮迴焊耐熱性。 When using this copper foil to manufacture high-frequency circuit boards, in addition to the above-mentioned adhesion and transmission characteristics, it is necessary to consider reflow heat resistance in recent years.
此處,「迴焊耐熱性」係指製造高頻電路基板時進行之迴焊製程之耐熱性。迴焊製程係指以使糊狀焊劑附著到電路基板之配線與電子零部件之接點之狀態,通過迴焊爐加熱而進行錫焊之方法。近年來,從降低環境負荷之觀點出發,電路基板之電氣接合部使用之焊劑之無鉛(Pb)化正在發展。無Pb焊劑與過去之焊劑相比熔點較高,適用於迴焊製程時,電路基板被曝露於例如大約260℃之高溫,因此與使用過去之焊劑之情況相比,需要具備高水平之迴焊耐熱性。因此,特別係 對於用於這種用途之銅箔而言,確保與絕緣基板之充分黏附性,並以高水平兼具使用該銅箔製造之電路基板(印刷配線板)之迴焊耐熱性與傳輸特性成為新課題。 Here, "reflow heat resistance" refers to the heat resistance of the reflow process performed when manufacturing high-frequency circuit boards. The reflow process refers to a method of soldering by heating in a reflow furnace in a state where the paste flux is attached to the connection point between the wiring of the circuit board and the electronic component. In recent years, from the viewpoint of reducing the environmental load, the lead (Pb)-free soldering flux used in the electrical joints of circuit boards is being developed. The Pb-free flux has a higher melting point than the past flux. When used in the reflow process, the circuit board is exposed to a high temperature of, for example, about 260°C. Therefore, compared with the use of the past flux, a higher level of reflow is required Heat resistance. Therefore, in particular For the copper foil used for this purpose, it is new to ensure sufficient adhesion to the insulating substrate, and to combine the reflow heat resistance and transmission characteristics of the circuit substrate (printed wiring board) made with the copper foil at a high level. Subject.
本申請人例如於專利文獻1中已提出一種方法,其使用氫氧化鉀溶液於熱塑性樹脂薄膜表面形成微細凹凸後,依次進行無電解鍍銅及電解鍍銅,形成具有起因於熱塑性樹脂薄膜表面形狀之微細凹凸之銅層,製作作為電路基板之包金屬層壓體,並已公開傳輸特性及黏附性優秀。然而,本申請人其後對專利文獻1所述之發明進一步開展討論後,得知有時可能無法得到充分之迴焊耐熱性,尚有改善之餘地。
For example, the applicant has proposed a method in
專利文獻2中已公開一種表面處理銅箔,其對表面粗糙度(Rzjis)不足1.0μm之表面進行粗化處理,並對粗化處理後之表面積進行控制而成。已得知將這種銅箔適用於高頻用電路基板時,具有良好傳輸特性,但是由於表面之輪廓性較低,因此於現在之高端伺服器用途等要求高水準迴焊耐熱性之用途中,不滿足特性。
進而,專利文獻3中已公開一種包銅層壓板用表面處理銅箔,其通過利用銅鈷鎳合金電鍍之粗化處理形成粗化顆粒而成。將這種銅箔運用於高頻用電路基板時,銅箔與樹脂之接觸面積增加,因此能夠確保良好黏附性,但是由於銅箔之表面積過大,因此預料傳輸特性不佳,並且對迴焊耐熱性未進行任何考慮。 Furthermore, Patent Document 3 discloses a surface-treated copper foil for a copper-clad laminate, which is formed by forming roughened particles by a roughening treatment using copper-cobalt-nickel alloy plating. When this kind of copper foil is applied to a high-frequency circuit board, the contact area between the copper foil and the resin is increased, so good adhesion can be ensured. However, because the surface area of the copper foil is too large, the transmission characteristics are expected to be poor and heat-resistant to reflow No consideration is given to sex.
專利文獻1:日本專利特開2013-158935號公報 Patent Document 1: Japanese Patent Laid-Open No. 2013-158935
專利文獻2:日本專利第5129642號公報 Patent Document 2: Japanese Patent No. 5129642
專利文獻3:日本專利特開2013-147688號公報 Patent Document 3: Japanese Patent Laid-Open No. 2013-147688
本發明之目的在於提供一種表面處理銅箔以及使用該表面處理銅箔製造之包銅層壓板或印刷配線板,該表面處理銅箔適用於能夠支持高頻化資訊通信設備之高性能化及高功能化之包銅層壓板或印刷配線板,於使用該表面處理銅箔製造之包銅層壓板或印刷配線板中,能夠確保表面處理銅箔與介電常數及介質損耗角正切較低且介電特性優秀之樹脂基材之充分黏附性,並能夠以高水平滿足迴焊耐熱性及傳輸特性。 The object of the present invention is to provide a surface-treated copper foil and a copper-clad laminate or printed wiring board manufactured using the surface-treated copper foil. The surface-treated copper foil is suitable for supporting high-performance and high-frequency information communication equipment. The functionalized copper-clad laminate or printed wiring board, in the copper-clad laminate or printed wiring board made of the surface-treated copper foil, can ensure that the surface-treated copper foil and the dielectric constant and dielectric loss tangent are low and medium The resin substrate with excellent electrical properties has sufficient adhesion, and can meet the reflow heat resistance and transmission characteristics at a high level.
本發明人深入研究之結果,發現一種表面處理銅箔,其用於利用與具有一定介電常數之樹脂基材之層壓黏合形成包銅層壓板,通過於表面處理銅箔之與樹脂基材之貼合面具有為滿足指定條件而經過適當控制之粗面化層,能夠製造確保表面處理銅箔與樹脂基材之充分黏附性且迴焊耐熱性及高頻特性優秀之包銅層壓板或印刷配線板,從而完成本發明。 As a result of intensive research, the inventor found a surface-treated copper foil, which is used to form a copper-clad laminate by lamination and bonding with a resin substrate with a certain dielectric constant. The surface treatment of the copper foil and the resin substrate The bonding surface has a roughened layer that has been appropriately controlled to meet the specified conditions. It can produce copper-clad laminates that ensure sufficient adhesion between the surface-treated copper foil and the resin substrate and have excellent reflow heat resistance and high-frequency characteristics. The wiring board is printed, thereby completing the present invention.
即,本發明之主要構成如下所示。 That is, the main structure of the present invention is as follows.
(1)一種表面處理銅箔,其用於利用與介電常數2.6至4.0之第一樹脂基材之層壓黏合形成包銅層壓板,其特徵在於:於與該第一樹脂基材之貼合面具有滿足下述所示條件1之表面處理層。
(1) A surface-treated copper foil, which is used to form a copper-clad laminate by lamination and bonding with a first resin substrate with a dielectric constant of 2.6 to 4.0, and is characterized in that it is attached to the first resin substrate The mating surface has a surface treatment layer
附記 Supplement
條件1:於利用蝕刻從該包銅層壓板使銅箔部分全部溶解而得到之該第一樹脂基材之表面上層壓黏合第二樹脂基材時,該第一樹脂基材與該第二樹脂基材之黏合界面之界面高度係0.15至0.85μm,存在於該黏合界面之凹凸數於每2.54μm寬度中係11至30個。 Condition 1: When a second resin substrate is laminated and bonded on the surface of the first resin substrate obtained by dissolving the copper foil part from the copper-clad laminate by etching, the first resin substrate and the second resin The interface height of the bonding interface of the substrate is 0.15 to 0.85 μm, and the number of concavities and convexities existing in the bonding interface is 11 to 30 per 2.54 μm width.
(2)如上述(1)項所述之表面處理銅箔,其中,存在於該黏合界面之凹凸數於每2.54μm寬度中係15至25個。 (2) The surface-treated copper foil described in (1) above, wherein the number of concavities and convexities existing in the bonding interface is 15 to 25 per 2.54 μm width.
(3)如上述(1)或(2)項所述之表面處理銅箔,其中,該黏合界面之界面高度係0.18至0.50μm。 (3) The surface-treated copper foil described in (1) or (2) above, wherein the interface height of the bonding interface is 0.18 to 0.50 μm.
(4)如上述(3)項所述之表面處理銅箔,其中,該黏合界面之界面高度係0.20至0.25μm。 (4) The surface-treated copper foil as described in (3) above, wherein the interface height of the bonding interface is 0.20 to 0.25 μm.
(5)如上述(1)至(4)項中任一項所述之表面處理銅箔,其中,該第一樹脂基材之介電常數係3.0至3.9。 (5) The surface-treated copper foil according to any one of (1) to (4) above, wherein the dielectric constant of the first resin substrate is 3.0 to 3.9.
(6)如上述(1)至(5)項中任一項所述之表面處理銅箔,其中,存在於該黏合界面之界面傾斜角θ係15°至85°。 (6) The surface-treated copper foil according to any one of the above (1) to (5), wherein the interface inclination angle θ existing at the bonding interface is 15° to 85°.
(7)如上述(6)項所述之表面處理銅箔,其中,存在於該黏合界面之界面傾斜角θ係20°至70°。 (7) The surface-treated copper foil described in (6) above, wherein the interface inclination angle θ existing at the bonding interface is 20° to 70°.
(8)一種包銅層壓板,其將如上述(1)至(7)中任一項所述之表面處理銅箔與該第一樹脂基材以該表面處理銅箔之該貼合面與該第一樹脂基材相對之方式層壓黏合形成而成。 (8) A copper-clad laminate, which combines the surface-treated copper foil described in any one of (1) to (7) above and the first resin substrate with the bonding surface of the surface-treated copper foil and The first resin substrate is formed by laminating and bonding the first resin substrate to face each other.
(9)一種印刷配線板,其使用如上述(1)至(7)中任一項所述之表面處理銅箔。 (9) A printed wiring board using the surface-treated copper foil as described in any one of (1) to (7) above.
(10)一種印刷配線板,其具有將介電常數2.6至4.0之 第一樹脂基材與第二樹脂基材層壓黏合而成之樹脂層壓體1個或2個以上,其特徵在於:該第一樹脂基材與該第二樹脂基材之黏合界面之界面高度係0.15至0.85μm,存在於該黏合界面之凹凸數於每2.54μm寬度中係11至30個。 (10) A printed wiring board having a dielectric constant of 2.6 to 4.0 One or more resin laminates formed by laminating and bonding the first resin substrate and the second resin substrate, characterized in that: the interface of the bonding interface between the first resin substrate and the second resin substrate The height is 0.15 to 0.85 μm, and the number of concavities and convexities existing in the bonding interface is 11 to 30 per 2.54 μm width.
(11)如上述(10)項所述之印刷配線板,其中,存在於該黏合界面之凹凸數於每2.54μm寬度中係15至25個。 (11) The printed wiring board according to the above item (10), wherein the number of concavities and convexities existing in the bonding interface is 15 to 25 per 2.54 μm width.
(12)如上述(10)或(11)項所述之印刷配線板,其中,該黏合界面之界面高度係0.18至0.50μm。 (12) The printed wiring board as described in (10) or (11) above, wherein the interface height of the bonding interface is 0.18 to 0.50 μm.
(13)如上述(12)項所述之印刷配線板,其中,該黏合界面之界面高度係0.20至0.25μm。 (13) The printed wiring board according to the above item (12), wherein the interface height of the bonding interface is 0.20 to 0.25 μm.
(14)如上述(10)至(13)項中任一項所述之印刷配線板,其中,該第一樹脂基材之介電常數係3.0至3.9。 (14) The printed wiring board according to any one of (10) to (13) above, wherein the dielectric constant of the first resin substrate is 3.0 to 3.9.
(15)如上述(10)至(14)項中任一項所述之印刷配線板,其中,存在於該黏合界面之界面傾斜角θ係15°至85°。 (15) The printed wiring board according to any one of the above (10) to (14), wherein the interface inclination angle θ existing at the bonding interface is 15° to 85°.
(16)如上述(15)項所述之印刷配線板,其中,存在於該黏合界面之界面傾斜角θ係20°至70°。 (16) The printed wiring board according to the above item (15), wherein the inclination angle θ of the interface existing at the bonding interface is 20° to 70°.
本發明能夠提供一種表面處理銅箔以及使用該表面處理銅箔製造之包銅層壓板或印刷配線板,該表面處理銅箔適用於能夠支持以高速對大容量資訊進行傳遞處理之支持高頻化資訊通信設備之高性能化及高功能化之包銅層壓板或印刷配線板,於使用該表面處理銅箔製造之包銅層壓板或印刷配線板中,能夠確保表面處理銅箔與介電常數及介質損耗角正切較低且介電特性優秀之樹脂基材之充分黏附性,並能夠以高水 平滿足迴焊耐熱性及傳輸特性。 The present invention can provide a surface-treated copper foil and a copper-clad laminate or printed wiring board manufactured by using the surface-treated copper foil. The surface-treated copper foil is suitable for high-frequency support capable of supporting high-speed transmission of large-capacity information. High-performance and high-function copper-clad laminates or printed wiring boards for information and communication equipment. In the copper-clad laminates or printed wiring boards made of the surface-treated copper foil, the surface-treated copper foil and dielectric constant can be ensured And sufficient adhesion of resin substrates with low dielectric loss tangent and excellent dielectric properties, and can be used with high water It satisfies reflow heat resistance and transmission characteristics.
B1‧‧‧第一樹脂基材(或樹脂芯板層) B1‧‧‧The first resin substrate (or resin core layer)
B2‧‧‧第二樹脂基材(或預浸坯料層) B2‧‧‧Second resin substrate (or prepreg layer)
BL1、BL2‧‧‧基線 BL1, BL2‧‧‧Baseline
BL3‧‧‧線 BL3‧‧‧line
C‧‧‧空隙(或裂縫) C‧‧‧Void (or crack)
F1‧‧‧氣體之膨脹力 F1‧‧‧Expansion force of gas
F2‧‧‧剪切力 F2‧‧‧Shear force
F3‧‧‧摩擦力 F3‧‧‧Friction
H‧‧‧界面高度 H‧‧‧Interface height
M、M1‧‧‧表面處理銅箔 M, M1‧‧‧Surface treated copper foil
M2‧‧‧銅箔 M2‧‧‧Copper foil
P‧‧‧包銅層壓板 P‧‧‧Copper clad laminate
S‧‧‧黏合界面 S‧‧‧Glue interface
T1、T2‧‧‧試驗片 T1, T2‧‧‧Test piece
θ、θ1、θ2‧‧‧界面傾斜角 θ、θ1、θ2‧‧‧Interface tilt angle
圖1(a)及(b)係將從包銅層壓板P溶解銅箔部分M1而得到之第一樹脂基材(樹脂芯板層)B1與第二樹脂基材(預浸坯料層)B2層壓黏合時使用掃描式電子顯微鏡(SEM)觀察樹脂芯板層B1與預浸坯料層B2之黏合界面S時之概念圖,圖1(a)表示以低倍率(例如10000倍)觀察該黏合界面之情況,圖1(b)表示以高倍率(例如50000倍)觀察該黏合界面之情況。 Figure 1 (a) and (b) are the first resin substrate (resin core layer) B1 and the second resin substrate (prepreg layer) B2 obtained by dissolving the copper foil portion M1 from the copper-clad laminate P A conceptual diagram when using a scanning electron microscope (SEM) to observe the bonding interface S between the resin core layer B1 and the prepreg layer B2 during lamination bonding. Figure 1(a) shows the bonding at low magnification (for example, 10000 times) In the case of the interface, Figure 1(b) shows the observation of the bonding interface at a high magnification (for example, 50,000 times).
圖2係用於說明對圖1(b)所示樹脂芯板層B1與預浸坯料層B2之黏合界面S之凹凸數進行測定之方法之概念圖。 Fig. 2 is a conceptual diagram for explaining the method of measuring the number of concavities and convexities of the bonding interface S between the resin core layer B1 and the prepreg layer B2 shown in Fig. 1(b).
圖3(a)至(c)係用於概括說明迴焊耐熱試驗導致樹脂基材B1、B2中之成分揮發而產生之氣體積存於樹脂芯板層B1與預浸坯料層B2之黏合界面S之空隙C而產生之氣體之膨脹力F1作用於該黏合界面S時之經時變化之圖,表示起因於該氣體之膨脹力F1而產生之沿該黏合界面S之平行方向而產生之剪切力F2小於於該黏合界面S沿剪切力F2之相反方向而產生之摩擦力F3之情況。 Figure 3 (a) to (c) are used to summarize the reflow heat resistance test that causes the volatilization of the components in the resin substrates B1 and B2, and the volume of gas generated is stored in the bonding interface S between the resin core layer B1 and the prepreg layer B2 The graph of the time-dependent change of the expansion force F1 of the gas generated by the gap C on the bonding interface S shows the shear generated by the expansion force F1 of the gas along the direction parallel to the bonding interface S The force F2 is smaller than the friction force F3 generated by the bonding interface S in the opposite direction of the shear force F2.
圖4(a)至(c)係用於概括說明迴焊耐熱試驗導致樹脂基材B1、B2中之成分揮發而產生之氣體積存於樹脂芯板層B1與預浸坯料層B2之黏合界面S之空隙C而產生之氣體之膨脹力F1作用於該黏合界面S時之經時變化之圖,表示起因於該氣體之膨脹力F1而產生之沿該黏合界面S之平行方向而產生 之剪切力F2大於於該黏合界面S沿剪切力F2之相反方向而產生之摩擦力F3之情況。 Figure 4 (a) to (c) are used to summarize the reflow heat resistance test that causes the volatilization of the components in the resin substrate B1 and B2 and the gas generated by the volume is stored in the bonding interface S between the resin core layer B1 and the prepreg layer B2 The graph of the time-dependent change of the expansion force F1 of the gas generated by the gap C on the bonding interface S shows that the expansion force F1 of the gas is generated along the parallel direction of the bonding interface S The shearing force F2 is greater than the frictional force F3 generated by the bonding interface S in the opposite direction of the shearing force F2.
圖5(a)至(d)係用於說明對第一樹脂基材B1與第二樹脂基材B2之黏合界面S之界面高度H進行測定之試驗片(多層板)T1之製作方法之圖。 Figure 5 (a) to (d) are diagrams for explaining the method of making a test piece (multilayer board) T1 for measuring the interface height H of the bonding interface S between the first resin substrate B1 and the second resin substrate B2 .
圖6(a)至(d)係用於說明迴焊耐熱試驗之試驗片T2之製作方法之圖。 Figure 6 (a) to (d) are diagrams for explaining the method of making the test piece T2 for the reflow heat resistance test.
圖7係對表2所示實施例1至20及比較例1至17,以第一樹脂基材與第二樹脂基材之黏合界面之界面高度H為橫軸,以存在於黏合界面之凹凸數為縱軸進行繪圖時之圖。 Figure 7 is a comparison of Examples 1 to 20 and Comparative Examples 1 to 17 shown in Table 2, with the interface height H of the bonding interface between the first resin substrate and the second resin substrate as the horizontal axis, and the unevenness of the bonding interface The figure is when the vertical axis is drawn.
圖8(a)、(b)係存在於黏合界面之界面傾斜角θ之測定例,圖8(a)表示界面傾斜角θ1處於本發明之適當範圍內(70°)之情況,圖8(b)表示界面傾斜角θ2處於本發明之適當範圍外(100°)之情況。 Figures 8(a) and (b) are measurement examples of the interface tilt angle θ existing at the bonding interface. Figure 8(a) shows the case where the interface tilt angle θ1 is within the appropriate range (70°) of the present invention. Figure 8( b) indicates the case where the interface tilt angle θ2 is outside the proper range (100°) of the present invention.
圖8(a)、(b)係存在於黏合界面之界面傾斜角θ之測定例,圖8(a)表示界面傾斜角θ1處於本發明之適當範圍內(70°)之情況,圖8(b)表示界面傾斜角θ2處於本發明之適當範圍外(100°)之情況。 Figures 8(a) and (b) are measurement examples of the interface tilt angle θ existing at the bonding interface. Figure 8(a) shows the case where the interface tilt angle θ1 is within the appropriate range (70°) of the present invention. Figure 8( b) indicates the case where the interface tilt angle θ2 is outside the proper range (100°) of the present invention.
以下參照附圖對本發明所述之表面處理銅箔之實施形態進行說明。 Hereinafter, embodiments of the surface-treated copper foil according to the present invention will be described with reference to the drawings.
圖1概括表示多層板T1中第一樹脂基材(樹脂芯板層)B1與第二樹脂基材(預浸坯料層)B2之黏合界面S。多層板T1將第一樹脂基材B1與本發明之表面處理銅箔層壓形成包銅 層壓板,將利用蝕刻從該包銅層壓板使銅箔部分全部溶解而得到之第一樹脂基材(樹脂芯板層)B1與第二樹脂基材(預浸坯料層)B2層壓黏合而成。本發明之表面處理銅箔可以係電解銅箔及壓延銅箔之任意一個。另外,上述多層板T1係迴焊耐熱試驗用之多層板,於實際電路基板中,存在銅箔溶解之部分與銅箔不溶解之部分,形成有電路圖案。 Fig. 1 schematically shows the bonding interface S between the first resin substrate (resin core layer) B1 and the second resin substrate (prepreg layer) B2 in the multilayer board T1. The multilayer board T1 is laminated with the first resin substrate B1 and the surface-treated copper foil of the present invention to form a copper clad Laminate, by laminating and bonding the first resin substrate (resin core layer) B1 and the second resin substrate (prepreg layer) B2 obtained by dissolving the copper foil part from the copper-clad laminate by etching. to make. The surface-treated copper foil of the present invention may be any one of electrolytic copper foil and rolled copper foil. In addition, the above-mentioned multilayer board T1 is a multilayer board for reflow heat resistance test. In the actual circuit board, there are parts where the copper foil is dissolved and parts where the copper foil is insoluble, and a circuit pattern is formed.
通常迴焊試驗將2片以上樹脂基材B1、B2層壓而製作試驗片T1,進行加熱對是否產生界面剝離進行評估。此時,第一樹脂基材B1與第二樹脂基材B2之黏合界面S因壓制時造成之缺陷等而存在微細空隙C(以後將這種空隙稱為「裂縫」)。若將試驗片加熱到迴焊溫度區域(例:260℃),則第一樹脂基材B1及第二樹脂基材B2中之低分子量之成分作為氣體而揮發。如圖3(a)及圖4(a)揮發之氣體積存於裂縫C而產生膨脹力F1,並產生使裂縫C傳播(擴大裂縫C)之剪切力F2。此外,裂縫C之傳播沿剪切黏合界面S之方向作用力,因此防止剪切造成第一樹脂基材B1與第二樹脂基材B2偏離之摩擦力(靜摩擦力)F3於第一樹脂基材B1與第二樹脂基材B2之黏合界面S產生,抑制裂縫C之傳播。此處,本發明人發現,將起因於積存於該黏合界面S之空隙C之氣體之膨脹力F1而於該黏合界面S產生之剪切力F2之剪切能量設為Es,將於該黏合界面S產生之摩擦力F3之摩擦能量設為Ef時,如果下述(1)式之關係成立,則如圖3(a)至(c)所示,可防止第一樹脂基材B1與第二樹脂基材B2之黏合界面S上之裂縫C之傳播,可抑制兩樹脂基材B1、B2間形成之界面上之剝離。 In a general reflow test, two or more resin base materials B1 and B2 are laminated to prepare a test piece T1, and heating is performed to evaluate whether or not interfacial peeling occurs. At this time, the bonding interface S of the first resin base material B1 and the second resin base material B2 has fine voids C due to defects caused during pressing and the like (this void is hereinafter referred to as "cracks"). When the test piece is heated to the reflow temperature region (example: 260°C), the low molecular weight components in the first resin base material B1 and the second resin base material B2 volatilize as a gas. As shown in Fig. 3(a) and Fig. 4(a), the volatilized gas is stored in the crack C to generate an expansion force F1, and generates a shear force F2 that causes the crack C to propagate (expand the crack C). In addition, the propagation of the crack C acts along the direction of the shear bonding interface S, thereby preventing the friction (static friction) F3 of the first resin substrate B1 from deviating from the second resin substrate B2 caused by shear on the first resin substrate The bonding interface S between B1 and the second resin substrate B2 is generated, and the propagation of the crack C is suppressed. Here, the inventors found that the shear energy of the shear force F2 generated at the bonding interface S due to the expansion force F1 of the gas accumulated in the gap C of the bonding interface S is set to Es, and the bonding When the frictional energy of the frictional force F3 generated by the interface S is set to Ef, if the relationship of the following formula (1) holds, as shown in Figure 3 (a) to (c), the first resin substrate B1 and the The propagation of the crack C on the bonding interface S of the two resin substrates B2 can inhibit peeling at the interface formed between the two resin substrates B1 and B2.
該剪切能量Es<該摩擦能量Ef...(1) The shear energy Es<the friction energy Ef. . . (1)
此處,「剪切力F2」係起因於從該樹脂基材B1、B2產生之氣體之膨脹力之力,係沿黏合界面S之平行方向作用使裂縫C傳播之力,「剪切能量Es」係剪切力F2乘以剪切力F2作用之距離得到之功(能量),「摩擦力F3」係於第一樹脂基材B1與第二樹脂基材B2之黏合界面S沿剪切力F2之相反方向作用而抑制裂縫C之傳播之力,「摩擦能量Ef」係剪切力F2作用之第一樹脂基材B1與第二樹脂基材B2之黏合界面S之距離乘以摩擦力F3得到之功(能量)(參照圖3(a))。 Here, the "shearing force F2" is the force resulting from the expansion force of the gas generated from the resin substrates B1 and B2, and the force acting in the direction parallel to the bonding interface S to propagate the crack C, "shear energy Es "" is the work (energy) obtained by multiplying the shearing force F2 by the distance of the shearing force F2. "Friction force F3" is the shearing force along the bonding interface S between the first resin substrate B1 and the second resin substrate B2 The force acting in the opposite direction of F2 to inhibit the propagation of the crack C. "Friction energy Ef" is the distance between the bonding interface S between the first resin substrate B1 and the second resin substrate B2 applied by the shear force F2 multiplied by the friction force F3 The work (energy) obtained (refer to Figure 3(a)).
另一方面,如果該黏合界面S中該剪切能量Es大於該摩擦能量Ef,則如圖4(a)至(c)所示,黏合界面S中摩擦力F3小於剪切力F2,因此第一樹脂基材B1與第二樹脂基材B2之黏合界面S偏離而裂縫C不斷傳播,最終產生界面剝離。 On the other hand, if the shear energy Es in the bonding interface S is greater than the friction energy Ef, as shown in Figures 4(a) to (c), the friction force F3 in the bonding interface S is less than the shear force F2, so the first The bonding interface S of the resin substrate B1 and the second resin substrate B2 deviates and the crack C continues to propagate, eventually causing interface peeling.
本發明人深入研究之結果,發現如圖3及圖4所示,抑制氣體產生之裂縫C之傳播之主要因素係於第一樹脂基材B1與第二樹脂基材B2之黏合界面S產生之摩擦力F3(或摩擦能量Ef),特別係第一樹脂基材B1與第二樹脂基材B2之黏合界面S之界面高度H之作用較大。即,如果界面高度H較高,則剪切力作用之樹脂基材與樹脂基材間形成之界面之距離(面積)增加,從而摩擦能量增加,其結果加熱導致氣體產生時能夠抑制裂縫之傳播。此外,界面高度H變高之銅箔由於固著效應較高,因此使樹脂與銅箔黏附時存在具有高黏附性之趨勢。 As a result of in-depth research, the inventor found that as shown in Figures 3 and 4, the main factor that inhibits the propagation of gas-generated cracks C is caused by the bonding interface S between the first resin substrate B1 and the second resin substrate B2. The frictional force F3 (or frictional energy Ef), in particular, has a greater effect on the interface height H of the bonding interface S between the first resin substrate B1 and the second resin substrate B2. That is, if the interface height H is high, the distance (area) of the interface formed between the resin substrate and the resin substrate under the action of shearing force increases, thereby increasing the frictional energy. As a result, the propagation of cracks can be suppressed when the heating causes gas generation. . In addition, the copper foil with the higher interface height H has a higher fixing effect, so there is a tendency for the resin to adhere to the copper foil with high adhesion.
通過將第一樹脂基材B1與第二樹脂基材B2之黏合界面S之界面高度H設為0.15至0.85μm而得到所需特性,優選為將界面高度H設為0.18至0.50μm之範圍。通過將界面高度H設為上述範圍,能夠以高水準兼具迴焊耐熱性與傳輸特性。界面高度H不足0.15μm時迴焊耐熱性降低。這係因為迴焊試驗時樹脂基材B1、B2中之低分子量之成分氣化時,第一樹脂基材B1與第二樹脂基材B2之黏合界面S處之摩擦能量Ef較小,因此無法承受起因於氣體之膨脹力F1之剪切力F2而剝離之緣故。另一方面,如果界面高度H大於0.85μm,則蝕刻前之銅箔之表面輪廓性變得過高,因此傳輸損耗變大。此外,對第一樹脂基材B1與第二樹脂基材B2之黏合界面S詳細地進行調查,其結果確認第一樹脂基材B1與第二樹脂基材B2之黏合界面S之形狀不為表面處理銅箔之粗面化層之完美複製品。理由係銅箔之粗化顆粒之根部及粗化顆粒彼此相接之部位之間隙可能無法充分填充樹脂。因此,為了確保充分迴焊耐熱性,必須使用可得到上述界面高度H之銅箔。特別係將界面高度H設為0.20至0.25μm之範圍出於能夠以更高水準兼具迴焊耐熱性與傳輸特性而更優選。 The desired characteristics are obtained by setting the interface height H of the bonding interface S of the first resin substrate B1 and the second resin substrate B2 to 0.15 to 0.85 μm, and it is preferable to set the interface height H to the range of 0.18 to 0.50 μm. By setting the interface height H in the above range, it is possible to achieve both reflow heat resistance and transmission characteristics at a high level. When the interface height H is less than 0.15 μm, the reflow heat resistance decreases. This is because when the low molecular weight components in the resin substrates B1 and B2 vaporize during the reflow test, the frictional energy Ef at the bonding interface S of the first resin substrate B1 and the second resin substrate B2 is small, so it cannot Withstand the shearing force F2 due to the expansion force F1 of the gas and peel off. On the other hand, if the interface height H is greater than 0.85 μm, the surface profile of the copper foil before etching becomes too high, and therefore the transmission loss becomes larger. In addition, the adhesion interface S between the first resin substrate B1 and the second resin substrate B2 was investigated in detail, and the results confirmed that the shape of the adhesion interface S between the first resin substrate B1 and the second resin substrate B2 was not a surface Process the perfect copy of the roughened layer of copper foil. The reason is that the roots of the roughened particles of the copper foil and the gaps where the roughened particles meet each other may not be sufficiently filled with resin. Therefore, in order to ensure sufficient reflow heat resistance, it is necessary to use copper foil that can obtain the above-mentioned interface height H. In particular, it is more preferable to set the interface height H to the range of 0.20 to 0.25 μm because it can achieve both reflow heat resistance and transmission characteristics at a higher level.
此外,作為對銅箔之表面凹凸形狀進行定量之方法,已知使用接觸式粗糙度計測定之十點平均粗糙度Rz,但是普通接觸式粗糙度計之測針之直徑係2.0μm,對如本發明所示正確測定包含(界面)高度1μm以下微細凹凸形狀之表面狀態不適用。此外,Rz之另一個問題點在於會受到粗化處理前之間隔數十μm之原始箔之起伏之影響。如本專利所示例如 需要僅對寬度2.54μm之剖面圖像中樹脂與樹脂界面之凹凸形狀進行定量化時,Rz會受到原始箔之起伏與粗化之凹凸之兩者之影響,因此作為指標不合適。另外,對界面高度H之測定方法後面將進行敘述。 In addition, as a method to quantify the surface unevenness of copper foil, it is known to use a contact roughness meter to measure the ten-point average roughness Rz, but the diameter of the stylus of a common contact roughness meter is 2.0μm. According to the invention, it is not applicable to accurately measure the surface condition including the fine uneven shape (interface) height of 1 μm or less. In addition, another problem of Rz is that it is affected by the fluctuation of the original foil with an interval of tens of μm before the roughening treatment. As shown in this patent for example When it is necessary to quantify only the unevenness of the resin-resin interface in the cross-sectional image with a width of 2.54μm, Rz is affected by both the undulation of the original foil and the roughened unevenness, so it is not suitable as an index. In addition, the method of measuring the interface height H will be described later.
此外,與本發明之表面處理銅箔一起層壓黏合而形成包銅層壓板之第一樹脂基材之介電常數處於2.6至4.0之範圍。介電常數不足2.6之第一樹脂基材通常係官能團較少之難黏附性之樹脂基材,於表面處理銅箔之輪廓性相對較低之本發明中,銅箔與第一樹脂基材之貼合界面上之剝離強度容易降低。此外,如果介電常數大於4.0,則介電常數較高,因此誘電損失增加,其結果傳輸損耗變大。從這種觀點出發,第一樹脂基材之介電常數更優選為3.0至3.9之範圍。 In addition, the dielectric constant of the first resin substrate of the copper-clad laminate formed by laminating and bonding with the surface-treated copper foil of the present invention is in the range of 2.6 to 4.0. The first resin substrate with a dielectric constant of less than 2.6 is usually a difficult-to-adhesive resin substrate with fewer functional groups. In the present invention, where the profile of the surface-treated copper foil is relatively low, the difference between the copper foil and the first resin substrate The peel strength on the bonding interface is easily reduced. In addition, if the dielectric constant is greater than 4.0, the dielectric constant is high, so the dielectric loss increases, and as a result, the transmission loss increases. From this viewpoint, the dielectric constant of the first resin substrate is more preferably in the range of 3.0 to 3.9.
作為第一樹脂基材,可使用從聚苯醚樹脂、含聚苯乙烯系聚合物之聚苯醚樹脂、含三聚氰酸三烯丙酯之聚合物或共聚物之樹脂組合物、經甲基丙烯酸或丙烯酸改性之環氧樹脂組合物、加苯酚類丁二烯聚合物、鄰苯二甲酸二烯丙酯樹脂、二乙烯基苯樹脂、多官能性甲基丙烯醯基樹脂、不飽和聚酯樹脂、聚丁二烯樹脂、苯乙烯-丁二烯、苯乙烯-丁二烯與苯乙烯-丁二烯之交聯聚合物、聚四氟乙烯等中選擇之絕緣樹脂。 As the first resin substrate, resin compositions from polyphenylene ether resins, polyphenylene ether resins containing polystyrene-based polymers, polymers or copolymers containing triallyl cyanurate, and acrylic resins can be used. Acrylic or acrylic modified epoxy resin composition, phenolic butadiene polymer, diallyl phthalate resin, divinylbenzene resin, polyfunctional methacrylic resin, unsaturated Polyester resin, polybutadiene resin, styrene-butadiene, cross-linked polymer of styrene-butadiene and styrene-butadiene, polytetrafluoroethylene and other insulating resins.
作為第二樹脂基材,可列舉出由與第一樹脂基材相同之絕緣樹脂構成之樹脂基材、以及玻璃纖維或芳綸纖維等骨架材料中含浸上述絕緣樹脂之預浸坯料等樹脂含浸材料等。 Examples of the second resin base material include resin base materials made of the same insulating resin as the first resin base material, and resin impregnated materials such as prepregs in which the insulating resin is impregnated in a skeleton material such as glass fiber or aramid fiber. Wait.
此外,本發明之表面處理銅箔之第一樹脂基材B1與第二樹脂基材B2之黏合界面S中凹凸數於每2.54μm寬度 中需要係11至30個,更優選為15至25個。如果該黏合界面S之凹凸數處於11至30個之範圍,則第一樹脂基材B1與第二樹脂基材B2之黏合界面S之摩擦能量Ef較高,因此迴焊耐熱性提高。另一方面,如果該黏合界面S之凹凸數不足11個,則該黏合界面S上之摩擦能量Ef較低,因此迴焊耐熱性降低。另一方面,如果該黏合界面S之凹凸數多於30個,則相鄰凹凸間產生之裂縫C容易連續傳播,迴焊耐熱性降低。 In addition, the number of concavities and convexities in the bonding interface S of the first resin substrate B1 and the second resin substrate B2 of the surface-treated copper foil of the present invention is within a width of 2.54 μm The medium number is 11 to 30, more preferably 15 to 25. If the number of concavities and convexities of the bonding interface S is in the range of 11 to 30, the friction energy Ef of the bonding interface S of the first resin substrate B1 and the second resin substrate B2 is higher, and therefore the reflow heat resistance is improved. On the other hand, if the number of concavities and convexities of the bonding interface S is less than 11, the friction energy Ef on the bonding interface S is low, and therefore the reflow heat resistance is reduced. On the other hand, if the number of concavities and convexities of the bonding interface S is more than 30, the cracks C generated between adjacent concavities and convexities are likely to continue to propagate, and the reflow heat resistance is reduced.
此處,作為對銅箔表面之凹凸進行定量之方法,已知過去使用雷射顯微鏡等非接觸式粗糙度計進行表面積之測定。但是,使用雷射顯微鏡時,雷射之直徑約0.4μm,因此存在無法檢測寬度0.4μm以下微細凹凸之問題。如上述所示迴焊耐熱性會受到凹凸數之影響,因此本發明中,通過能夠判別寬度0.4μm以下微細凹凸之剖面觀察對黏合界面中凹凸數進行管理。另外,對黏合界面S中凹凸數之測定方法後面將進行敘述。 Here, as a method of quantifying the unevenness of the copper foil surface, it is known that the surface area is measured using a non-contact roughness meter such as a laser microscope. However, when using a laser microscope, the diameter of the laser is about 0.4μm, so there is a problem that it is impossible to detect fine irregularities with a width of 0.4μm or less. As described above, the reflow heat resistance is affected by the number of irregularities. Therefore, in the present invention, the number of irregularities in the bonding interface can be managed through cross-sectional observation that can discriminate fine irregularities with a width of 0.4 μm or less. In addition, the method of measuring the number of irregularities in the bonding interface S will be described later.
此外,本發明之表面處理銅箔之第一樹脂基材B1與第二樹脂基材B2之黏合界面S中界面傾斜角θ優選為15°至85°,更優選為20°至70°之範圍。界面傾斜角θ不足15°時,迴焊試驗時裂縫傳播之路徑之坡度變化平緩,因此存在黏合界面S處之摩擦能量Ef降低,迴焊耐熱性降低之趨勢。另一方面,界面傾斜角θ大於85°時,裂縫C不沿第一樹脂基材B1與第二樹脂基材B2之黏合界面S傳播,因此存在迴焊耐熱性降低之趨勢。另外,界面傾斜角θ如下定義。即,使用掃描式電子顯微鏡,通過用倍率50000倍拍攝時之SEM圖像(寬度 2.54μm之範圍)對第一樹脂基材(樹脂芯板層)B1與第二樹脂基材(預浸坯料層)B2之黏合界面S進行觀察,將各凹凸中於界面高度H之二分之一高度位置劃出之切線m與基線BL2所呈角度之平均值定義為界面傾斜角θ(參照圖1(b))。 In addition, the interface inclination angle θ in the bonding interface S of the first resin substrate B1 and the second resin substrate B2 of the surface-treated copper foil of the present invention is preferably 15° to 85°, more preferably 20° to 70° . When the interface inclination angle θ is less than 15°, the slope of the crack propagation path changes smoothly during the reflow test, so the friction energy Ef at the bonding interface S decreases, and the reflow heat resistance tends to decrease. On the other hand, when the interface inclination angle θ is greater than 85°, the crack C does not propagate along the bonding interface S of the first resin substrate B1 and the second resin substrate B2, so there is a tendency for the reflow heat resistance to decrease. In addition, the interface tilt angle θ is defined as follows. That is, using a scanning electron microscope, through the SEM image (width 2.54μm range) Observe the bonding interface S between the first resin substrate (resin core layer) B1 and the second resin substrate (prepreg layer) B2, and divide the unevenness in the two-half of the interface height H The average value of the angle between the tangent line m drawn at a height position and the baseline BL2 is defined as the interface tilt angle θ (refer to Figure 1(b)).
此處,示出滿足上述特性之銅箔之製造方法之一例。 Here, an example of a method of manufacturing copper foil satisfying the above-mentioned characteristics is shown.
第一樹脂基材B1與第二樹脂基材B2之黏合界面S中,作為得到正確界面高度H之銅箔之表面處理方法,優選列舉粗化處理。粗化處理優選為將例如下述所示粗化電鍍處理1與粗化電鍍處理2組合進行。
In the bonding interface S of the first resin base material B1 and the second resin base material B2, as a surface treatment method for obtaining a copper foil with a correct interface height H, a roughening treatment is preferably used. The roughening treatment is preferably performed by combining the
(粗化電鍍處理1) (Roughening plating treatment 1)
粗化電鍍處理1係於銅箔上形成粗化顆粒之方法,具體而言使用硫酸銅鍍浴進行高電流密度之電鍍處理。硫酸銅鍍浴能夠添加各種添加劑。本發明人深入研究之結果,發現下述因素會對樹脂彼此間之界面形狀造成影響,並發現通過正確地設定這些條件,能夠以高水準滿足本發明效果之迴焊耐熱性、傳輸特性及黏附性之3個要求特性。
The roughening
已確認使電流密度增加時,樹脂基材B1、B2彼此間之黏合界面S之界面高度H變高。作為將粗化變得微細之添加劑,已知例如日本專利特許第4629969號公報所述,將Mo添加到粗化電鍍浴中。然而,通過使用添加Mo之過去之粗化電鍍浴進行之粗化處理,製作黏合界面之界面高度H係1.0μm之銅箔時,多數情況黏合界面之凹凸數於每2.54μm寬度中超過30個或者係10個以下,無法得到充分迴焊耐熱性。 It has been confirmed that when the current density is increased, the interface height H of the bonding interface S between the resin base materials B1 and B2 becomes higher. As an additive for making roughening fine, for example, as described in Japanese Patent No. 4629969, adding Mo to a roughening plating bath is known. However, when the copper foil with the interface height H of the bonding interface is 1.0μm is produced by the roughening treatment using the roughening plating bath of the past with the addition of Mo, in most cases the number of unevenness of the bonding interface exceeds 30 per 2.54μm width Or if it is 10 or less, sufficient reflow heat resistance cannot be obtained.
相對於此,本發明深入研究之結果,發現除了向粗化電鍍處理1之電鍍浴中添加Mo外,通過添加鈦(Ti)、鈀(V)及鋯(Zr)之任意金屬或化合物,即使界面高度H係1.0μm以下,也能夠將黏合界面之凹凸數控制於適當範圍(於每2.54μm寬度中係11至30個)內。該原理並不明確,推測係析出電位與Mo不同之該金屬或化合物對粗化電鍍之核生成頻率造成影響,導致粗化顆粒之生成數發生變化之緣故。此外,作為將黏合界面之凹凸數控制於適當範圍內之其他添加劑,已通過實驗確認例如可以係MPS(4,4'-硫代雙苯硫醇(巰基苯基硫化物))、SPS(雙(3-磺丙基)二硫化物)。
In contrast to this, as a result of intensive research of the present invention, it was found that in addition to adding Mo to the plating bath of roughening
(粗化電鍍處理2) (Roughening plating treatment 2)
粗化電鍍處理2對通過粗化處理電鍍1進行表面處理之銅箔進行平滑之被覆電鍍,為了防止粗化顆粒之脫落而進行。作為例子,通過硫酸銅電鍍浴等進行。
The
進而,本發明之表面處理銅箔中,作為與該第一樹脂基材之貼合面所具有之表面處理層,例如可列舉通過具有於銅箔基體上利用粗化顆粒之電沉積所形成之微細凹凸表面之粗面化層構成之情況,或者於該粗面化層上進一步形成矽烷偶合劑層而構成之情況。 Furthermore, in the surface-treated copper foil of the present invention, as the surface-treated layer provided on the bonding surface of the first resin substrate, for example, one formed by electrodeposition using roughened particles on a copper foil substrate In the case of forming a roughened layer on the surface of the fine uneven surface, or in the case of forming a silane coupling agent layer on the roughened layer.
另外,作為矽烷偶合劑層之形成方法,例如可列舉以下方法,即於表面處理銅箔之該粗面化層之凹凸表面上直接或經由中間層間接地塗佈矽烷偶合劑溶液後,風乾(自然乾燥)或加熱乾燥而形成。塗佈之偶合劑層之乾燥只要將水蒸發,便可充分發揮本發明之效果,但出於50至180℃加熱乾燥 後可促進矽烷偶合劑與銅箔之反應而優選。 In addition, as a method of forming the silane coupling agent layer, for example, the following method can be cited, that is, directly or indirectly via an intermediate layer on the uneven surface of the roughened layer of the surface-treated copper foil, and then air-dry the silane coupling agent solution. Dry) or heat and dry to form. The coating coupling agent layer is dried as long as the water evaporates, and the effect of the present invention can be fully exerted, but it is dried by heating at 50 to 180℃ It is preferable to promote the reaction between the silane coupling agent and the copper foil later.
矽烷偶合劑層優選含有環氧系矽烷、氨基系矽烷、乙烯系矽烷、甲基丙烯酸系矽烷、丙烯酸系矽烷、苯乙烯系矽烷、醯脲系矽烷、巰基系矽烷、硫化物系矽烷、異氰酸酯系矽烷之任意1種以上。 The silane coupling agent layer preferably contains epoxy-based silane, amino-based silane, vinyl-based silane, methacrylic-based silane, acrylic-based silane, styrene-based silane, urea-based silane, mercapto-based silane, sulfide-based silane, and isocyanate-based silane. Any one or more of silanes.
作為其他實施形態,進一步優選為於表面處理銅箔與矽烷偶合劑層之間具有從含Ni基礎層、含Zn耐熱處理層以及含Cr防鏽處理層中選擇之至少1層之中間層。 As another embodiment, it is more preferable to have an intermediate layer of at least one layer selected from a Ni-containing base layer, a Zn-containing heat-resistant treatment layer, and a Cr-containing rust-proof treatment layer between the surface-treated copper foil and the silane coupling agent layer.
含鎳(Ni)基礎層優選為於例如銅箔基體及粗面化層中之銅(Cu)向第一樹脂基材側擴散而發生銅腐蝕導致黏附性降低之情況下,形成於粗面化層與矽烷偶合劑層之間。含Ni基礎層含有鎳(Ni)、鎳(Ni)-磷(P)、鎳(Ni)-鋅(Zn)中至少1種以上。其中,出於能夠抑制形成電路配線時所進行之銅箔蝕刻時之鎳殘留之觀點,優選為鎳-磷。 The nickel (Ni)-containing base layer is preferably formed when copper (Cu) in the copper foil matrix and the roughened layer diffuses to the side of the first resin substrate and copper corrosion occurs and the adhesion is reduced. Between the layer and the silane coupling agent layer. The Ni-containing base layer contains at least one of nickel (Ni), nickel (Ni)-phosphorus (P), and nickel (Ni)-zinc (Zn). Among them, nickel-phosphorus is preferred from the viewpoint of being able to suppress nickel residue during copper foil etching performed when circuit wiring is formed.
含鋅(Zn)耐熱處理層優選為於需要進一步提高耐熱性之情況下形成。耐熱處理層優選為例如由鋅或含鋅合金形成,該含鋅合金係從鋅(Zn)-錫(Sn)、鋅(Zn)-鎳(Ni)、鋅(Zn)-鈷(Co)、鋅(Zn)-銅(Cu)、鋅(Zn)-鉻(Cr)以及鋅(Zn)-鈀(V)中選擇之至少1種以上之含鋅合金。上述之中,從抑制形成電路配線時所進行之蝕刻時之側蝕之觀點出發,特別優選為鋅-鈀。另外,此處所提及之「耐熱性」指於表面處理銅箔層壓樹脂基材,進行加熱使樹脂硬化後,表面處理銅箔與樹脂基材之間之黏附強度不易降低之性質,係與迴焊耐熱性不同之特性。 The zinc (Zn)-containing heat-resistant treatment layer is preferably formed when it is necessary to further improve the heat resistance. The heat-resistant treatment layer is preferably formed of, for example, zinc or a zinc-containing alloy, which is selected from zinc (Zn)-tin (Sn), zinc (Zn)-nickel (Ni), zinc (Zn)-cobalt (Co), At least one zinc-containing alloy selected from zinc (Zn)-copper (Cu), zinc (Zn)-chromium (Cr), and zinc (Zn)-palladium (V). Among the above, zinc-palladium is particularly preferred from the viewpoint of suppressing undercut during etching performed when forming circuit wiring. In addition, the "heat resistance" mentioned here refers to the property that the adhesion strength between the surface-treated copper foil and the resin substrate is not easily reduced after the surface-treated copper foil laminated resin substrate is heated to harden the resin. Different characteristics from reflow heat resistance.
含Cr防鏽處理層優選為於需要進一步提高耐蝕性之情況下形成。作為防鏽處理層,例如可列舉利用鍍鉻所形成之鉻層、利用鉻酸鹽處理所形成之鉻酸鹽層。 The Cr-containing antirust treatment layer is preferably formed when it is necessary to further improve the corrosion resistance. Examples of the anti-rust treatment layer include a chromium layer formed by chromium plating and a chromate layer formed by chromate treatment.
上述基礎層、耐熱處理層及防鏽處理層之三層全部形成時,優選為以該順序於粗面化層上形成,此外,可根據用途或作為目的之特性,只形成任意一層或兩層。 When all the three layers of the above-mentioned base layer, heat-resistant treatment layer and anti-rust treatment layer are formed, it is preferable to form on the roughened layer in this order. In addition, only one or two layers can be formed according to the application or the characteristics of the purpose. .
此外,本發明之表面處理銅箔適用於製造包銅層壓板或印刷配線板。包銅層壓板通過將該表面處理銅箔與該第一樹脂基材(絕緣基板)以該表面處理銅箔之該貼合面與該第一樹脂基材相對之方式層壓黏合而製造。 In addition, the surface-treated copper foil of the present invention is suitable for manufacturing copper-clad laminates or printed wiring boards. The copper-clad laminate is manufactured by laminating and bonding the surface-treated copper foil and the first resin substrate (insulating substrate) so that the bonding surface of the surface-treated copper foil faces the first resin substrate.
製造包銅層壓板時,通過將具有矽烷偶合劑層之表面處理銅箔與絕緣基板加熱壓制使其黏附而製造即可。另外,於絕緣基板上塗佈矽烷偶合劑,通過將其與最外層表面具有防鏽處理層之銅箔進行加熱壓制使其黏附而製作出包銅層壓板,該包銅層壓板與本發明具有同等效果。 When manufacturing a copper-clad laminate, it can be manufactured by heating and pressing a surface-treated copper foil with a silane coupling agent layer and an insulating substrate to adhere them. In addition, a silane coupling agent is coated on an insulating substrate, and a copper-clad laminate is produced by heating and pressing it with a copper foil with an anti-rust treatment layer on the outermost surface to make a copper-clad laminate. The same effect.
〔表面處理銅箔之製作〕 〔Production of surface treated copper foil〕
(1)粗面化層之形成製程 (1) The formation process of the roughened layer
利用粗化顆粒之電沉積於銅箔基體上形成具有微細凹凸表面之粗面化層。 The electrodeposition of roughened particles is used to form a roughened layer with fine uneven surface on the copper foil substrate.
(2)基礎層之形成製程 (2) The formation process of the base layer
根據需要於粗面化層上形成含Ni基礎層。 If necessary, a Ni-containing base layer is formed on the roughened layer.
(3)耐熱處理層之形成製程 (3) Formation process of heat-resistant treatment layer
根據需要於粗面化層上或基礎層上形成含Zn耐熱處理層。 A Zn-containing heat-resistant treatment layer is formed on the roughened layer or the base layer as needed.
(4)防鏽處理層之形成製程 (4) Formation process of anti-rust treatment layer
根據需要浸泡到pH值不足3.5之含Cr化合物之水溶液中,以0.3A/dm2以上之電流密度進行鉻電鍍處理,於粗面化層上、或者於根據需要於粗面化層上形成之基礎層及/或耐熱處理層上,形成防鏽處理層。 If necessary, immerse it in an aqueous solution containing Cr compounds with a pH value of less than 3.5, and perform chromium electroplating treatment with a current density of 0.3A/dm 2 or more on the roughened layer or on the roughened layer as required An anti-rust treatment layer is formed on the base layer and/or heat-resistant treatment layer.
(5)矽烷偶合劑層之形成製程 (5) The formation process of the silane coupling agent layer
於粗面化層上直接、或者經由形成基礎層、耐熱處理層及防鏽處理層之至少1層之中間層間接地形成矽烷偶合劑層。 A silane coupling agent layer is formed directly on the roughened layer or indirectly via an intermediate layer forming at least one of the base layer, the heat-resistant treatment layer, and the rust-proof treatment layer.
〔包銅層壓板之製造〕 〔Manufacturing of Copper Clad Laminate〕
本實施形態之包銅層壓板通過以下製程製造。 The copper-clad laminate of this embodiment is manufactured through the following process.
(1)表面處理銅箔之製作 (1) Production of surface treated copper foil
按上述(1)至(5),製作表面處理銅箔。 According to the above (1) to (5), the surface treatment copper foil is produced.
(2)包銅層壓板之製造(層壓)製程 (2) Manufacturing (laminating) process of copper clad laminate
將上述製作之表面處理銅箔與第一樹脂基材(絕緣基板)以構成表面處理銅箔之矽烷偶合劑層之表面與第一樹脂基材(絕緣基板)之貼合面相對之方式重合後,通過進行加熱加壓處理使兩者黏附,從而製造包銅層壓板。 The surface-treated copper foil produced above and the first resin substrate (insulating substrate) are superimposed so that the surface of the silane coupling agent layer constituting the surface-treated copper foil faces the bonding surface of the first resin substrate (insulating substrate) , By heating and pressurizing treatment to make the two adhere, thereby manufacturing copper-clad laminate.
另外,上述記載內容只不過示出本發明之實施形態之示例,於不超出本發明之主要內容之範圍內,能夠採用各種方式。 In addition, the above description is merely an example of the embodiment of the present invention, and various methods can be adopted without departing from the scope of the main content of the present invention.
實施例 Example
〔實施例1〕 [Example 1]
以下述條件對厚度18μm之無粗化(表面粗糙度Rz約1.1μm)之銅箔基體進行表面處理,製作出表面處理銅箔。 The surface treatment was performed on a copper foil substrate with a thickness of 18 μm without roughening (surface roughness Rz: about 1.1 μm) under the following conditions to produce a surface-treated copper foil.
(1)粗面化層之形成 (1) Formation of roughened layer
對銅箔基體之表面進行之粗面化處理時,依次進行下述所示粗面化電鍍處理1及2,形成粗面化層。
When the surface of the copper foil substrate is roughened, the following
(粗面化電鍍處理1) (Roughening plating treatment 1)
以表1所示條件實施。 It was implemented under the conditions shown in Table 1.
(粗面化電鍍處理2) (Roughening plating treatment 2)
硫酸銅:銅濃度40至63g/L
Copper sulfate:
硫酸:135至155g/L Sulfuric acid: 135 to 155g/L
液溫:57至68℃ Liquid temperature: 57 to 68°C
電流密度:7至13A/dm2 Current density: 7 to 13A/dm 2
時間:1秒至2分鐘 Time: 1 second to 2 minutes
(2)含Ni基礎層之形成 (2) Formation of Ni-containing base layer
於銅箔基體之表面形成粗面化層後,通過以下述所示Ni電鍍條件於粗面化層上進行電鍍,形成基礎層(Ni附著量0.06mg/dm2)。 After forming a roughened layer on the surface of the copper foil base, electroplating is performed on the roughened layer under the Ni plating conditions shown below to form a base layer (Ni adhesion amount 0.06 mg/dm 2 ).
<Ni電鍍條件> <Ni plating conditions>
硫酸鎳:鎳濃度5.0g/L Nickel sulfate: nickel concentration 5.0g/L
過硫酸銨:40.0g/L Ammonium persulfate: 40.0g/L
硼酸:28.5g/L Boric acid: 28.5g/L
電流密度:1.5A/dm2 Current density: 1.5A/dm 2
pH值:3.8 pH value: 3.8
溫度:28.5℃ Temperature: 28.5℃
時間:1秒至2分鐘 Time: 1 second to 2 minutes
(3)含Zn耐熱處理層之形成 (3) Formation of Zn-containing heat-resistant treatment layer
形成基礎層後,通過以下述所示Zn電鍍條件於該基礎層上進行電鍍,形成耐熱處理層(Zn附著量:0.05mg/dm2)。 After the base layer was formed, electroplating was performed on the base layer under the Zn plating conditions shown below to form a heat-resistant treatment layer (Zn adhesion amount: 0.05 mg/dm 2 ).
<Zn電鍍條件> <Zn plating conditions>
七水硫酸鋅:1至30g/L Zinc sulfate heptahydrate: 1 to 30g/L
氫氧化鈉:10至300g/L Sodium hydroxide: 10 to 300g/L
電流密度:0.1至10A/dm2 Current density: 0.1 to 10A/dm 2
溫度:5至60℃ Temperature: 5 to 60°C
時間:1秒至2分鐘 Time: 1 second to 2 minutes
(4)含Cr防鏽處理層之形成 (4) Formation of Cr-containing anti-rust treatment layer
形成耐熱處理層後,通過以下述所示鍍鉻條件於該耐熱處理層上進行處理,形成防鏽處理層(Cr附著量:0.02mg/dm2)。 After the heat-resistant treatment layer was formed, the heat-resistant treatment layer was treated under the chromium plating conditions shown below to form a rust preventive treatment layer (Cr adhesion amount: 0.02 mg/dm 2 ).
<鍍鉻條件> <Chrome plating conditions>
鉻酸酐(CrO3):2.5g/L Chromic anhydride (CrO 3 ): 2.5g/L
pH值:2.5 pH value: 2.5
電流密度:0.5A/dm2 Current density: 0.5A/dm 2
溫度:15至45℃ Temperature: 15 to 45°C
時間:1秒至2分鐘 Time: 1 second to 2 minutes
(5)矽烷偶合劑層之形成 (5) Formation of silane coupling agent layer
形成防鏽處理層後,通過以下述所示矽烷處理液及處理條件於該防鏽處理層上實施矽烷偶合處理,以表2所示附著量形成矽烷偶合劑層。另外,構成各層之金屬之附著量通過使用螢光X射線分析裝置(日本理學股份有限公司(RIGAKU)製:ZSX Primus、分析直徑:Φ35mm)之定量分析進行測定。 After the rust preventive treatment layer was formed, the silane coupling treatment was performed on the rust preventive treatment layer with the silane treatment liquid and treatment conditions shown below to form a silane coupling agent layer with the adhesion amount shown in Table 2. In addition, the adhesion amount of the metal constituting each layer was measured by quantitative analysis using a fluorescent X-ray analyzer (manufactured by RIGAKU: ZSX Primus, analysis diameter: Φ35 mm).
<矽烷處理液及處理條件> <Silane treatment liquid and treatment conditions>
矽烷種類:γ-甲基丙烯醯氧丙基三甲氧基矽烷 Silane type: γ-methacryloxypropyl trimethoxysilane
矽烷濃度:0.1至10g/L Silane concentration: 0.1 to 10g/L
液溫:20至50℃ Liquid temperature: 20 to 50°C
〔實施例2〕至〔實施例20〕 [Example 2] to [Example 20]
以表1所示條件實施粗面化電鍍處理1,其他處理以與實施例1相同之條件進行處理。
The
〔比較例1〕至〔比較例17〕 [Comparative Example 1] to [Comparative Example 17]
以表1所示條件實施粗面化電鍍處理1,其他處理以與實施例1相同之條件進行處理。
The
(試驗片之特性評估) (Characteristic evaluation of test piece)
對各試驗片進行各種測定、評估,其結果如表2所示。 Various measurements and evaluations were performed on each test piece, and the results are shown in Table 2.
(1)第一樹脂基材與第二樹脂基材之黏合界面之界面高度H之測定 (1) Measurement of the interface height H of the bonding interface between the first resin substrate and the second resin substrate
第一樹脂基材與第二樹脂基材之黏合界面之界面高度H之測定按以下所示步驟進行。首先,於第一樹脂基材B1之兩面層壓本發明之表面處理銅箔M(M1),以各樹脂基材之推薦壓制條件進行壓制,製作包銅層壓板P(圖5(a))。作為推薦壓制條件,例如若第一樹脂基材B1係松下股份有限公司製之R-5670樹脂,則可列舉溫度:200℃、壓制壓力:2.5MPa、壓制時間:180分鐘之情況。接著,對壓制製作之包銅層壓板P進行烘乾處理。本實施例中以150℃×80分鐘之條件進行烘乾處理。以下述蝕刻條件A對包銅層壓板P進行蝕刻,從包銅層壓板P溶解全部銅箔部分M1,形成第一樹脂基材B1(樹脂芯 板層)之狀態(圖5(b))。於蝕刻後之第一樹脂基材(樹脂芯板層)B1之表面層壓未使用之第二樹脂基材(例如預浸坯料層)B2(圖5(c)),以推薦壓制條件進行壓制,製作試驗片(多層板)T1(圖5(d))。 The measurement of the interface height H of the bonding interface between the first resin substrate and the second resin substrate is performed according to the following steps. First, the surface-treated copper foil M (M1) of the present invention is laminated on both sides of the first resin substrate B1, and pressed under the recommended pressing conditions for each resin substrate to produce a copper-clad laminate P (Figure 5(a)) . As the recommended pressing conditions, for example, if the first resin substrate B1 is R-5670 resin manufactured by Panasonic Corporation, temperature: 200° C., pressing pressure: 2.5 MPa, and pressing time: 180 minutes. Then, the pressed copper-clad laminate P is dried. In this embodiment, the drying treatment is performed under the conditions of 150°C×80 minutes. The copper-clad laminate P was etched under the following etching conditions A, and all the copper foil portions M1 were dissolved from the copper-clad laminate P to form the first resin substrate B1 (resin core The state of the board) (Figure 5(b)). Laminate an unused second resin substrate (such as a prepreg layer) B2 on the surface of the first resin substrate (resin core layer) B1 after etching (Figure 5(c)), and press it under the recommended pressing conditions , Make a test piece (multilayer board) T1 (Figure 5(d)).
接著,使用掃描式電子顯微鏡(SEM:日立製作所製:SU8020)對利用離子研磨裝置(日立製作所製:IM4000)進行處理之各試驗片T1之剖面進行觀察,按以下所示步驟對第一樹脂基材B1與第二樹脂基材B2之黏合界面S之界面高度H進行測定。首先,將觀察倍率擴大到200倍(本專利之圖像內視野之實際寬度係63.5μm),於任意位置將第一樹脂基材(樹脂芯板層)B1與第二樹脂基材(預浸坯料層)B2之黏合界面S之延伸方向與畫面之水平方向於±1°之範圍內對齊,接著,將觀察倍率擴大到10,000倍(本專利之圖像內視野之實際寬度係12.7μm),將於任意位置映射到SEM圖像內之形成該黏合界面S之凹凸中具有最下點位置即底位置之第1凹部之底位置設為A點,接著,將除去第1凹部及與該第1凹部相鄰之凹部之剩餘凹部中具有最下點位置即底位置之第2凹部之底位置設為B點,然後將連接A點與B點之直線設為基線BL1(圖1(a))。然後,於50,000倍(本專利之圖像內視野之實際寬度係2.54μm)之SEM圖像中與基線BL1平行地劃出基線BL2,使其通過於任意位置形成第一樹脂基材(樹脂芯板層)B1與第二樹脂基材(預浸坯料層)B2之黏合界面S之凹凸中具有最下點位置即底位置之第3凹部之底位置,對垂直方向上到距離基線BL2最遠之凸部之頂點之距離進行測定來作為界 面高度H(圖1(b))。本實施例於5個部位之視野對各界面高度進行測定,將其平均值作為界面高度H之測定。 Next, a scanning electron microscope (SEM: Hitachi, Ltd.: SU8020) was used to observe the cross-section of each test piece T1 processed by an ion milling device (Hitachi, Ltd.: IM4000). The interface height H of the bonding interface S between the material B1 and the second resin substrate B2 was measured. First, the observation magnification is enlarged to 200 times (the actual width of the field of view in the image of this patent is 63.5μm), and the first resin substrate (resin core layer) B1 and the second resin substrate (pre-impregnated Blank layer) The extension direction of the bonding interface S of B2 is aligned with the horizontal direction of the screen within ±1°, and then the observation magnification is expanded to 10,000 times (the actual width of the field of view in the image in this patent is 12.7μm), The bottom position of the first concave portion having the lowest point position, that is, the bottom position among the concavities and convexities forming the bonding interface S, which is mapped into the SEM image, is set as point A. Then, the first concave portion and the first concave portion are removed. 1 The bottom position of the second recess with the lowest point position of the remaining recesses of the adjacent recesses, that is, the bottom position, is set as point B, and then the line connecting point A and point B is set as the baseline BL1 (Figure 1(a) ). Then, in the SEM image of 50,000 times (the actual width of the field of view in the image of this patent is 2.54μm), the baseline BL2 is drawn parallel to the baseline BL1, and the first resin substrate (resin core) is formed by passing it at any position. Board layer) B1 and the second resin substrate (prepreg layer) B2 in the concavity and convexity of the bonding interface S has the lowest point position, that is, the bottom position of the bottom position of the bottom position of the third recess, the vertical direction to the farthest from the baseline BL2 The distance between the apex of the convex part is measured as the boundary Surface height H (Figure 1(b)). In this example, the height of each interface was measured in the field of view at 5 locations, and the average value was used as the measurement of the interface height H.
此外,第一樹脂基材(樹脂芯板層)B1與第二樹脂基材(預浸坯料層)B2係相同樹脂基材,且於SEM觀察中難以看清該黏合界面S時,通過以下述蝕刻條件B進行蝕刻,將第一樹脂基材(樹脂芯板層)B1與第二樹脂基材(預浸坯料層)B2腐蝕,從而能夠便於看清。 In addition, when the first resin substrate (resin core layer) B1 and the second resin substrate (prepreg layer) B2 are the same resin substrate, and it is difficult to see the bonding interface S in SEM observation, the following Etching condition B is to perform etching to etch the first resin substrate (resin core layer) B1 and the second resin substrate (prepreg layer) B2 so as to be easy to see.
<蝕刻條件A> <Etching condition A>
氯化銅濃度:1.2至2.5mol/L Copper chloride concentration: 1.2 to 2.5mol/L
鹽酸:2.9mol/L Hydrochloric acid: 2.9mol/L
液溫:30至45℃ Liquid temperature: 30 to 45°C
<蝕刻條件B> <Etching condition B>
蒸餾水:80cc Distilled water: 80cc
氨水:7cc Ammonia: 7cc
過氧化氫水:5cc Hydrogen peroxide water: 5cc
溫度:約25℃ Temperature: about 25℃
蝕刻時間:4至6秒 Etching time: 4 to 6 seconds
(2)接觸式粗糙度Rz、Ra之測定 (2) Measurement of contact roughness Rz and Ra
依據JIS B 0601:1994,使用接觸式表面粗糙度測定機(小坂研究所股份有限公司製SE1700),對所製作之銅箔之表面測定十點平均粗糙度Rz及算術平均粗糙度Ra。 In accordance with JIS B 0601: 1994, a contact surface roughness measuring machine (SE1700 manufactured by Kosaka Laboratory Co., Ltd.) was used to measure the ten-point average roughness Rz and the arithmetic average roughness Ra on the surface of the produced copper foil.
(3)第一樹脂基材與第二樹脂基材之黏合界面之凹凸數之測定方法 (3) Method for measuring the number of concavities and convexities of the bonding interface between the first resin substrate and the second resin substrate
與通過第一樹脂基材(樹脂芯板層)B1與第二樹脂基材 (預浸坯料層)B2之黏合界面S之界面高度H之測定方法進行觀察同樣,於該界面S於寬度2.54μm(本專利之圖像內視野之實際寬度係2.54μm)之範圍內對第一樹脂基材(樹脂芯板層)B1與第二樹脂基材(預浸坯料層)B2之黏合界面S之凹凸之傾斜與基線BL2平行之點數進行測定(參照圖2),將該測定之數作為第一樹脂基材(樹脂芯板層)B1與第二樹脂基材(預浸坯料層)B2之黏合界面S之凹凸數。本發明於5個部位之視野中對各黏合界面S之凹凸數進行測定,將其平均值作為黏合界面S之凹凸數。 And pass through the first resin substrate (resin core layer) B1 and the second resin substrate (Prepreg layer) The measurement method of the interface height H of the bonding interface S of B2 is also observed. The interface S is within the width of 2.54μm (the actual width of the field of view in the image of this patent is 2.54μm). A resin substrate (resin core layer) B1 and a second resin substrate (prepreg layer) B2 of the bonding interface S of the uneven slope and the baseline BL2 parallel to the number of points measured (refer to Figure 2), the measurement The number is used as the number of concavities and convexities of the bonding interface S between the first resin substrate (resin core layer) B1 and the second resin substrate (prepreg layer) B2. The present invention measures the number of concavities and convexities of each bonding interface S in a visual field of 5 locations, and uses the average value as the number of concavities and convexities of the bonding interface S.
(4)第一樹脂基材與第二樹脂基材之界面傾斜角之測定方法 (4) Method for measuring the inclination angle of the interface between the first resin substrate and the second resin substrate
使用掃描式電子顯微鏡,通過用倍率50000倍拍攝時之SEM圖像(寬度2.54μm之範圍)對第一樹脂基材(樹脂芯板層)B1與第二樹脂基材(預浸坯料層)B2之黏合界面S進行觀察,於各凹凸中界面高度H之二分之一高度位置劃出切線m,界面傾斜角θ係該切線m與基線BL2所成角度,本實施例於5個部位對切線m與基線BL2所成角度進行測定,求出其平均值作為界面傾斜角θ。此外,界面傾斜角θ之具體測定方法如圖8(a)及圖8(b)所示,於各凹凸劃出之該切線m1、m2與基線BL2所成角度θ1、θ2通過對各凹凸界面高度H之二分之一高度位置(通過垂直方向上到距離基線BL2最遠之凸部之頂點之距離(界面高度H)之中點劃出與BL2平行之線BL3,BL3與凹凸之輪廓線相交之位置)之切線m與基線BL2之所成角度進行測定而得到。圖8(a)作為參考表示界面傾斜 角θ1處於本發明之適當範圍內(70°)之情況,圖8(b)作為參考表示界面傾斜角θ2處於本發明之適當範圍外(100°)之情況。 Use a scanning electron microscope to compare the first resin substrate (resin core layer) B1 and the second resin substrate (prepreg layer) B2 through the SEM image taken at a magnification of 50,000 times (width of 2.54μm) Observe the bonding interface S, draw a tangent line m at a position that is half the height of the interface height H in each unevenness. The interface inclination angle θ is the angle formed by the tangent line m and the baseline BL2. In this embodiment, the tangent line is aligned at 5 locations. The angle between m and the baseline BL2 is measured, and the average value is obtained as the interface tilt angle θ. In addition, the specific method of measuring the interface inclination angle θ is shown in Fig. 8(a) and Fig. 8(b). The angles θ1 and θ2 formed by the tangent line m1, m2 and the base line BL2 drawn on each unevenness One-half of the height of the height H (through the vertical distance to the vertex of the convex part furthest from the baseline BL2 (interface height H), draw a line parallel to BL2 BL3, BL3 and the contour line of the bump The angle between the tangent line m of the intersection position) and the baseline BL2 is measured. Figure 8(a) shows the interface tilt as a reference When the angle θ1 is within the appropriate range (70°) of the present invention, Fig. 8(b) is used as a reference to show the case where the interface tilt angle θ2 is outside the appropriate range (100°) of the present invention.
(5)傳輸特性(高頻下之傳輸損耗之測定)之評估 (5) Evaluation of transmission characteristics (measurement of transmission loss under high frequency)
將各試料作為材料進行加工,利用微帶線形成傳輸路徑後,利用網絡分析儀對傳輸損耗進行測定,根據該測定之傳輸損耗之數值對傳輸特性進行評估。所製作之微帶線將特性阻抗設為50Ω,例如第一樹脂基材係R-5670時,設為銅箔之厚度:18μm、樹脂之厚度:0.2mm、寬度:500μm、長度:200mm。作為第一樹脂基材使用表2所示樹脂基材。關於傳輸特性,於20GHz下,將傳輸損耗-6.2dB以上之情況判定為「◎(合格)」,將不足-6.2dB且-6.5dB以上之情況判定為「○(合格)」,然後將不足-6.5dB之情況判定為「×(不合格)」。此外,於70GHz下,將傳輸損耗-20.6dB以上之情況判定為「◎(合格)」,將不足-20.6dB且-22.0dB以上之情況判定為「○(合格)」,將不足-22.0dB且-24.0dB以上之情況判定為「△(合格)」,然後將不足-24.0dB之情況判定為「×(不合格)」。 After processing each sample as a material and forming a transmission path using a microstrip line, the transmission loss is measured with a network analyzer, and the transmission characteristics are evaluated based on the measured transmission loss value. The produced microstrip line has a characteristic impedance of 50Ω. For example, when the first resin base material is R-5670, set the thickness of copper foil: 18μm, resin thickness: 0.2mm, width: 500μm, and length: 200mm. As the first resin substrate, the resin substrate shown in Table 2 was used. Regarding the transmission characteristics, at 20GHz, the case where the transmission loss is -6.2dB or more is judged as "◎ (pass)", the case of less than -6.2dB and -6.5dB or more is judged as "○ (pass)", and then the case is insufficient The case of -6.5dB is judged as "× (unqualified)". In addition, at 70GHz, the case where the transmission loss is -20.6dB or more is judged as "◎ (pass)", the case of less than -20.6dB and -22.0dB or more is judged as "○ (pass)", and the case is less than -22.0dB And the case of -24.0dB or more is judged as "△ (pass)", and the case of less than -24.0dB is judged as "× (unqualified)".
(6)表面處理銅箔對第一樹脂基材之黏附性(剝離強度)之評估 (6) Evaluation of the adhesion (peel strength) of the surface-treated copper foil to the first resin substrate
對表面處理銅箔與第一樹脂基材之黏附強度(剝離強度)進行測定,根據該測定值對表面處理銅箔對第一樹脂基材之黏附性進行評估。作為第一樹脂基材使用表2所示基材。試驗片以各第一樹脂基材之推薦壓制條件壓制製作。將表面處理銅箔 與第一樹脂基材層壓黏合(黏合)後,將試驗片蝕刻加工成寬度10mm之電路配線,利用雙面膠將第一樹脂基材側固定於不鏽鋼板,使用拉伸試驗機(Tensilon tester)(東洋精機製作所公司製),以50mm/分鐘之速度將電路配線沿90度方向剝離求出黏附強度。關於該黏附性,將黏附強度(剝離強度)不足0.4kN/m評估為「×(不合格)」,將0.4kN/m以上且不足0.5kN/m評估為「△(合格)」,將0.5kN/m以上且不足0.6kN/m評估為「○(合格)」,然後將0.6kN/m以上評估為「◎(合格)」。 The adhesion strength (peel strength) of the surface-treated copper foil to the first resin substrate was measured, and the adhesion of the surface-treated copper foil to the first resin substrate was evaluated based on the measured value. As the first resin substrate, the substrate shown in Table 2 was used. The test piece was pressed under the recommended pressing conditions of each first resin substrate. The surface treatment copper foil After lamination and bonding (bonding) with the first resin substrate, the test piece is etched into a circuit wiring with a width of 10 mm, and the first resin substrate side is fixed to the stainless steel plate with double-sided tape. The tensile tester (Tensilon tester ) (Manufactured by Toyo Seiki Seisakusho Co., Ltd.), the circuit wiring was peeled off at a speed of 50 mm/min in a 90-degree direction to obtain the adhesion strength. Regarding the adhesion, the adhesion strength (peel strength) of less than 0.4 kN/m is evaluated as "× (unacceptable)", 0.4 kN/m or more and less than 0.5 kN/m is evaluated as "△ (acceptable)", and 0.5 kN/m or more and less than 0.6 kN/m is evaluated as "○ (pass)", and 0.6 kN/m or more is evaluated as "◎ (pass)".
(7)迴焊耐熱性 (7) Reflow heat resistance
首先,對迴焊耐熱試驗之試驗片T2之製作方法進行說明。首先,製作於第一樹脂基材B1之兩面層壓黏合表面處理銅箔M1之包銅層壓板P(圖6(a))。接著,利用氯化銅(II)溶液等對包銅層壓板P進行蝕刻,將全部銅箔部分M1溶解(圖6(b))。通過於經過蝕刻之第一樹脂基材(樹脂芯板層)B1之兩面層壓黏合第二樹脂基材(預浸坯料層)B2與銅箔M2(圖6(c)),製作用於對迴焊耐熱性進行測定之試驗片T2(圖6(d))。接著,使所製作之試驗片T2通過迴焊爐,以用最高溫度260℃加熱10秒鐘之條件使其通過。以該條件使其反覆通過迴焊爐時,將通過次數15次以上仍未發生樹脂芯板層B1與預浸坯料層B2之間之層間剝離之試驗片評價為「◎(合格)」,將通過次數13至14次而發生層間剝離之試驗片評價為「○(合格)」,將通過次數10至12次而發生層間剝離之試驗片評價為「△(合格)」,然後將通過次數不足10次而發生層間剝離之 試驗片評價為「×(不合格)」。 First, the method of making the test piece T2 for the reflow heat resistance test will be described. First, a copper-clad laminate P with surface-treated copper foil M1 laminated on both sides of the first resin substrate B1 is produced (Figure 6(a)). Next, the copper-clad laminate P is etched with a copper (II) chloride solution or the like to dissolve the entire copper foil portion M1 (FIG. 6(b)). By laminating and bonding the second resin substrate (prepreg layer) B2 and copper foil M2 on both sides of the etched first resin substrate (resin core layer) B1 (Figure 6(c)), it is made for alignment Test piece T2 for the measurement of reflow heat resistance (Figure 6(d)). Next, the produced test piece T2 was passed through a reflow furnace, and was passed through under the condition of heating at a maximum temperature of 260°C for 10 seconds. When it was repeatedly passed through the reflow furnace under this condition, the test piece that did not cause interlayer peeling between the resin core layer B1 and the prepreg layer B2 after 15 passes was evaluated as "◎ (pass)". The test piece that passed 13 to 14 times with interlayer peeling was evaluated as "○ (pass)", the test piece that passed 10 to 12 times with interlayer peeling was evaluated as "△ (pass)", and then the number of passes was insufficient Delamination occurred 10 times The test piece was evaluated as "× (unacceptable)".
進而,本實施例根據通過上述(4)至(6)對傳輸特性、黏附性及迴焊耐熱性進行評估之結果,對性能進行綜合評估。關於該綜合評估,將黏附性、迴焊耐熱性、傳輸特性(20GHz)、傳輸特性(70GHz)之評估中,◎3個以上且剩餘為○之情況評估為「◎(合格)」,將◎數0至2個且剩餘為○之情況評估為「○(合格)」,將△1至4個且不含×之情況評估為「△(合格)」,然後將含1個以上×之情況評估為「×(不合格)」。 Furthermore, this embodiment comprehensively evaluates the performance based on the results of the evaluation of the transmission characteristics, adhesion, and reflow heat resistance through the above (4) to (6). Regarding this comprehensive evaluation, in the evaluation of adhesion, reflow heat resistance, transmission characteristics (20GHz), and transmission characteristics (70GHz), the case where there are more than three ◎ and the remaining ○ is evaluated as "◎ (pass)", and ◎ If the number is 0 to 2 and the remainder is ○, the case is evaluated as "○ (pass)", the case of △ 1 to 4 without × is evaluated as "△ (pass)", and then the case with more than 1 × is evaluated It is evaluated as "× (unqualified)".
根據表2可知,實施例1至20之表面處理銅箔與第一樹脂基材(絕緣基板)之黏附性、傳輸特性及迴焊耐熱性之全部性能均達到合格水平。另一方面,比較例1至17之第一樹脂基材之介電常數、黏合界面之界面高度H及凹凸數中至少一個處於本發明之範圍外,因此無法得到充分特性。圖7係對實施例1至20(圖7中之黑色方塊)及比較例1至17(圖7中之白色三角),以第一樹脂基材與第二樹脂基材之黏合界面之界面高度H為橫軸,以存在於黏合界面之凹凸數為縱軸進行繪圖時之圖。根據圖7可知,實施例1至20之黏合界面之界面高度均處於0.15至0.85μm之範圍,且存在於黏合界面之凹凸數於每2.54μm寬度中處於11至30個之範圍。 According to Table 2, it can be seen that the adhesion, transmission characteristics and reflow heat resistance of the surface-treated copper foils of Examples 1 to 20 and the first resin substrate (insulating substrate) have all reached the acceptable level. On the other hand, at least one of the dielectric constant of the first resin substrate of Comparative Examples 1 to 17, the interface height H of the bonding interface, and the number of concavities and convexities is outside the scope of the present invention, and therefore, sufficient characteristics cannot be obtained. Fig. 7 is a comparison of Examples 1 to 20 (black squares in Fig. 7) and Comparative Examples 1 to 17 (white triangles in Fig. 7), based on the interface height of the bonding interface between the first resin substrate and the second resin substrate H is the horizontal axis, and the number of concavities and convexities existing in the bonding interface is the vertical axis when drawing. It can be seen from FIG. 7 that the interface height of the bonding interface of Examples 1 to 20 is in the range of 0.15 to 0.85 μm, and the number of concavities and convexities existing in the bonding interface is in the range of 11 to 30 per 2.54 μm width.
本發明能夠提供一種表面處理銅箔,該表面處理銅箔適用於能夠支持以高速對大容量資訊進行傳遞處理之支持高頻化資訊通信設備之高性能化及高功能化之包銅層壓板 或印刷配線板,於使用該表面處理銅箔製造之包銅層壓板或印刷配線板中,能夠以高水平滿足與介電常數及介質損耗角正切較低且介電特性優秀之樹脂基材之充分黏附性、迴焊耐熱性及傳輸特性。進而,能夠提供使用該表面處理銅箔製造之包銅層壓板或印刷配線板。 The present invention can provide a surface-treated copper foil, which is suitable for high-performance and high-functional copper-clad laminates that can support high-frequency information communication equipment that can support high-speed transmission of large-capacity information. Or printed wiring board, in the copper-clad laminate or printed wiring board made of the surface-treated copper foil, it can meet the high level of the resin substrate with low dielectric constant and dielectric loss tangent and excellent dielectric properties. Full adhesion, reflow heat resistance and transmission characteristics. Furthermore, it is possible to provide a copper-clad laminate or printed wiring board manufactured using this surface-treated copper foil.
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