TW201728234A - 氣動式排氣系統 - Google Patents

氣動式排氣系統 Download PDF

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TW201728234A
TW201728234A TW105136082A TW105136082A TW201728234A TW 201728234 A TW201728234 A TW 201728234A TW 105136082 A TW105136082 A TW 105136082A TW 105136082 A TW105136082 A TW 105136082A TW 201728234 A TW201728234 A TW 201728234A
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supply
manifold
exhaust
regulator
pneumatic cylinder
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TWI735479B (zh
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賈克琳 埃德姆
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蘭姆研究公司
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Abstract

提供用於處理腔室中的設備。設置氣動汽缸。具有供應埠與排氣埠的歧管可控制地連接至氣動汽缸。乾燥氣體供應器與歧管的排氣埠流體連接並提供正壓至歧管的排氣埠。

Description

氣動式排氣系統
本揭露內容係關於半導體裝置之製造。更具體而言，本揭露內容係關於在具有氣動式系統之處理腔室中之半導體裝置之製造。
在半導體裝置之製造中，可在處理腔室中處理半導體。某些處理腔室具有可在極端環境中使用的氣動式系統。
本文所揭露的是各種實施例，包括用於處理腔室中的設備。設置氣動汽缸。具有供應埠與排氣埠的歧管可控制地連接至該氣動汽缸。乾燥氣體供應器與該歧管的排氣埠流體連接並提供正壓至該歧管的排氣埠。
其他實施例揭露用以處理基板的設備。設置電漿處理腔室。該電漿處理腔室包含：腔室壁，形成電漿處理腔室封閉空間；基板固持器，用以支持基板於該電漿處理腔室封閉空間中；壓力調節器，用以調節該電漿處理腔室封閉空間中的壓力；至少一電極，用以提供功率至該電漿處理腔室封閉空間而維持電漿；氣體入口，用以提供氣體至該電漿處理腔室封閉空間中；以及氣體出口，用以將氣體從該電漿處理腔室封閉空間中排出。至少一RF功率來源電氣連接至該至少一電極。氣體來源與該氣體入口流體連接。設置用以移動該基板的升降器。氣動汽缸連接至該升降器。具有供應埠與排氣埠的歧管可控制地連接至該氣動汽缸。乾燥氣體供應器與該歧管的排氣埠流體連接並提供正壓至該歧管的排氣埠。控制器可控制地連接至該氣體來源、該至少一RF功率來源、及該歧管。
這些及其它特徵將在以下的實施方式中伴隨著圖式更詳細地加以說明。
現在將詳細地敘述實施例，並且參考隨附圖式中所述的幾個實施例。在以下敘述中，特定細節被提出以提供對於本發明之徹底了解。然而，本揭露內容可在沒有這些特定細節之部分或全部之情況下加以實施，且本揭露內容包含根據此技術領域中之通常知識可做出之變化。熟知的處理步驟及∕或結構並未詳細地描述，以免不必要地混淆本揭露內容。
為了幫助了解，圖1概要地描繪電漿處理腔室100之一範例之橫剖面圖，其可使用在一實施例中。電漿處理腔室100包括電漿反應器102，電漿反應器102中具有電漿處理侷限腔室104。電漿功率供應器106，由匹配網路108所調整，供應電力至位於功率窗112附近之TCP線圈110，以藉由提供一感應耦合功率而在電漿處理侷限腔室104中產生電漿114。TCP線圈（上功率來源）110可用以在電漿處理侷限腔室104內產生均勻的散佈輪廓。例如，TCP線圈110可用以在電漿114中產生環形的功率分佈。提供功率窗112以將TCP線圈110與電漿處理侷限腔室104隔開，同時允許能量從TCP線圈110傳遞至電漿處理侷限腔室104。由匹配網路118所調整之晶圓偏壓功率供應器116提供電力至電極120，以設定由電極120所支撐之基板164上之偏壓。
如圖1所示，電漿處理腔室100更包括氣體來源∕氣體供應機制130。氣體來源130係經由氣體入口（例如，氣體注入器140）而流體連接至電漿處理侷限腔室104。氣體注入器140可位在電漿處理侷限腔室104中之任何有利的位置，並且可採取任何用以注入氣體之形式。處理氣體及副產物係藉由壓力控制閥142及泵浦144而從電漿侷限處理侷限腔室104移除，壓力控制閥142及泵浦144亦用來維持在電漿處理侷限腔室104中之特定壓力。在處理期間，壓力控制閥142可維持小於1 Torr之壓力。邊緣環160係放置在晶圓164周圍。美國加州佛蒙特省的蘭姆研究公司(Lam Research Corp. of Fremont, CA)之Kiyo可用於實行一實施例。在此實施例中，設置升降銷168以在移除處理期間升降基板164。升降引動器176可用以移動升降銷168。氣動式控制系統172可用以移動升降引動器176。乾燥氣體供應器180與氣動式控制系統172流體連接。控制器124係可控制地連接至氣體來源130、電漿功率供應器106、偏壓功率供應器116及氣動式控制系統172。槽體184形成於電漿反應器102之底部並且包圍腔室中若干個元件，包括氣動式控制系統172與冷卻管路188。槽體可形成與壓力控制閥142連接之排氣系統的部分。
圖2為具有乾燥氣體供應器180之氣動式控制系統172的示意圖。在此實施例中，乾燥氣體供應器180為N2 供應器。在其他實施例中，乾燥氣體供應器180可為乾燥空氣供應器。乾燥氣體供應器180與排氣調節器204、供應調節器208、第二階段調節器212、及管口216流體連接。排氣調節器204與儲存器220流體連接，儲存器220與氣動式歧管232的排氣埠224流體連接。供應調節器208與氣動式歧管232的供應埠228流體連接。氣動式歧管232係可控制地連接至氣動汽缸234，這表示使用經供應或排氣之氣體來控制氣動汽缸234之移動。第二階段調節器212與梭閥236流體連接。管口216與流量計240流體連接，流量計240與槽體184流體連接。控制器124係可控制地連接至氣動式歧管232。控制器124與氣動式歧管232之間的可控制連接，允許控制器124控制氣動式歧管232，而促使氣動汽缸234移動，其中在此範例中促使氣動汽缸234擴張或收縮。
在一實施例中，乾燥氣體供應器180提供60至90psi的壓力。管口216為0.022英吋直徑的管口並且設置在He封閉空間中。排氣調節器204經設定以提供6psi。供應調節器208經設定以提供75psi。第二階段調節器212經設定以提供60psi。業已發現此種配置提供少於12lpm的N2 沖洗流量。
圖3為顯示電腦系統300之高階方塊圖，電腦系統300適合用來實施在實施例中所使用之控制器124。電腦系統可具有許多實體形式，其範圍從積體電路、印刷電路板、小型手持裝置到巨型超級電腦。電腦系統300包括一或更多處理器302，進一步可包括電子顯示裝置304（用以顯示圖形、文字、及其它資料）、主記憶體306（例如，隨機存取記憶體（RAM））、儲存裝置308 （例如，硬碟機）、可移動儲存裝置310（例如，光學磁碟機）、使用者介面裝置312（例如，鍵盤、觸控螢幕、小鍵盤、滑鼠、或其他指向裝置等）、以及通訊介面314（例如，無線網路介面）。通訊介面314使軟體及資料可經由一線路在電腦系統300和外部裝置之間傳輸。該系統亦可包括與前述裝置／模組相連接之通訊基礎架構316（例如，通訊匯流排、交越條（cross-over bar）或網路）。
經由通訊介面314所傳輸的資訊，可係如電子訊號、電磁訊號、光學訊號、或能夠經由通訊連結而被通訊介面314接收的其他訊號，該通訊連接承載信號並且可使用導線或纜線、光纖、電話線、行動電話連結、射頻連結、及/或其他通訊管道而加以實施。利用此通訊介面，可想見一或更多處理器302在執行上述方法步驟的過程中可接收來自網路的資訊、或者可將資訊輸出至網路。更進一步，本發明的方法實施例可僅根據處理器執行，或者可經由網路執行，例如與分擔部分處理之遠端處理器相結合的網際網路。
用語「非暫態電腦可讀媒體」一般係用來指如主記憶體、輔助記憶體、可移除式儲存器、以及儲存裝置（例如，硬碟、快閃記憶體、磁碟機記憶體、CD-ROM、及其他形式的永久記憶體）的媒體，並且不應被解釋為涵蓋暫態的標的，例如載波或訊號。電腦碼的範例包含機器碼，例如由編譯器產生的碼、以及包含藉由電腦使用譯碼器而加以執行之較高階碼的檔案。電腦可讀媒體亦可為藉由電腦資料訊號而傳送的電腦碼，該電腦資料訊號係體現於載波中，並且代表可藉由處理器而執行的一序列指令。
在操作中，由乾燥氣體供應器180提供氮氣。乾燥氣體供應器180提供60到90psi的N2 氣體至排氣調節器204，排氣調節器204提供6psi的輸出壓至儲存器220。在此範例中的儲存器220提供的容量為汽缸吸進之容量的至少三倍。儲存器220提供N2 氣體至氣動式歧管232的排氣埠224。乾燥氣體供應器180亦提供N2 氣體至供應調節器208、第二階段調節器212、及管口216。控制器124可促使供應調節器208以75psi的壓力供應N2 至氣動式歧管232的供應埠228，而促使氣動汽缸234令升降引動器176推動升降銷168，進而抬升基板164。控制器124可促使氣動式歧管232的排氣埠224將氣動汽缸234排氣，而促使引動器176降低升降銷168，進而降低基板164。乾燥氣體供應器180亦提供N2 氣體至第二階段調節器212，第二階段調節器212提供60psi的N2 氣體至梭閥236。管口216與流量計240允許經由管口216流到槽體184者少於12 lpm。
在先前技術中，將排氣以對大氣開放的止回閥連接至氣動式歧管的排氣埠(而非從乾燥氣體供應器供應氣體至氣動式歧管的排氣埠)。業已發現在低溫下，於半導體處理系統中操作的氣動式系統意外地失敗。吾人認為大氣中的水蒸氣透過止回閥進入氣動式歧管的排氣埠。水蒸氣在低溫下凝結而導致氣動式系統失敗。
此實施例避免水蒸氣進入氣動式歧管的排氣埠。此實施例不需要額外的氣體來源且為最小侵入式。此實施例對氣動式歧管的排氣埠提供乾燥氣體的正壓(positive)回流。在此實施例中，排氣調節器204可經設定一次而連續使用。
在其他實施例中，氣動式系統可用於其他的用途，例如侷限環的抬起與降下、機械手臂的移動、或通道的開啟。此外，氣動式系統可用於其他類型的電漿系統，例如電容耦合型限制電漿系統。氣動式系統可用於蝕刻系統、沉積系統、原子層沉積系統、或原子層蝕刻系統。
本發明雖已透過數個較佳實施例加以說明，但仍有許多落於本發明範疇內之替換、變更及各種置換均等物。有許多本文中揭露之方法及裝置的替代實施方式。因此欲使以下隨附請求項解釋為包含所有落於本發明之真正精神及範疇內的此替換、變更及各種置換均等物。
100‧‧‧電漿處理腔室 102‧‧‧電漿反應器 104‧‧‧電漿處理侷限腔室 106‧‧‧電漿功率供應器 108‧‧‧匹配網路 110‧‧‧TCP線圈 112‧‧‧功率窗 114‧‧‧電漿 116‧‧‧晶圓偏壓功率供應器 118‧‧‧匹配網路 120‧‧‧電極 124‧‧‧控制器 130‧‧‧氣體來源∕氣體供應機制 140‧‧‧氣體注入器 142‧‧‧壓力控制閥 144‧‧‧泵浦 160‧‧‧邊緣環 164‧‧‧基板 168‧‧‧升降銷 172‧‧‧氣動式控制系統 176‧‧‧引動器 180‧‧‧乾燥氣體供應器 184‧‧‧槽體 188‧‧‧冷卻管路 204‧‧‧排氣調節器 208‧‧‧供應調節器 212‧‧‧第二階段調節器 216‧‧‧管口 220‧‧‧儲存器 224‧‧‧排氣埠 228‧‧‧供應埠 232‧‧‧氣動式歧管 234‧‧‧氣動汽缸 236‧‧‧梭閥 240‧‧‧流量計 300‧‧‧電腦系統 302‧‧‧處理器 304‧‧‧電子顯示裝置 306‧‧‧主記憶體 308‧‧‧儲存裝置 310‧‧‧可移動儲存裝置 312‧‧‧使用者介面裝置 314‧‧‧通訊介面 316‧‧‧通訊基礎架構
在伴隨的圖式中，以範例的方式（而非限制的方式）說明所揭露的發明，其中類似的元件符號表示類似的元件，其中：
圖1概要地描繪電漿處理腔室之一範例之橫剖面圖，其可使用在一實施例中。
圖2為氣動式控制系統的放大示意圖。
圖3為顯示一電腦系統之高階方塊圖，該電腦系統適合用來實施一控制器。
100‧‧‧電漿處理腔室
102‧‧‧電漿反應器
104‧‧‧電漿處理侷限腔室
106‧‧‧電漿功率供應器
108‧‧‧匹配網路
110‧‧‧TCP線圈
112‧‧‧功率窗
114‧‧‧電漿
116‧‧‧晶圓偏壓功率供應器
118‧‧‧匹配網路
120‧‧‧電極
124‧‧‧控制器
130‧‧‧氣體來源氣體供應機制
140‧‧‧氣體注入器
142‧‧‧壓力控制閥
144‧‧‧泵浦
160‧‧‧邊緣環
164‧‧‧基板
168‧‧‧升降銷
172‧‧‧氣動式控制系統
176‧‧‧引動器
180‧‧‧乾燥氣體供應器
184‧‧‧槽體
188‧‧‧冷卻管路

Claims (18)

  1. 一種設備，其用於一處理腔室中，包含： 一氣動汽缸； 一歧管，具有一供應埠與一排氣埠，並且可控制地連接至該氣動汽缸；以及 一乾燥氣體供應器，與該歧管的排氣埠流體連接並提供正壓至該歧管的排氣埠。
  2. 如申請專利範圍第1項之設備，其中該歧管的排氣埠與該乾燥氣體供應器之間的流體連接包含： 一排氣調節器，與該乾燥氣體供應器流體連接；以及 一儲存器，連接在該排氣調節器與該歧管的排氣埠之間。
  3. 如申請專利範圍第2項之設備，更包含一供應調節器，連接在該乾燥氣體供應器與該歧管的供應埠之間，並與該排氣調節器並聯。
  4. 如申請專利範圍第3項之設備，更包含一槽體，與該乾燥氣體供應器流體連接，並與該排氣調節器及該供應調節器並聯。
  5. 如申請專利範圍第4項之設備，其中該乾燥氣體供應器為乾燥空氣供應器或N2 供應器。
  6. 如申請專利範圍第5項之設備，其中該氣動汽缸為一電漿處理腔室中之銷升降器的一部份。
  7. 如申請專利範圍第2項之設備，其中該儲存器具有一容量且該氣動汽缸吸進一容量，其中該儲存器之容量為該氣動汽缸吸進之容量的至少三倍。
  8. 如申請專利範圍第1項之設備，其中該乾燥氣體供應器為乾燥空氣供應器或N2 供應器。
  9. 如申請專利範圍第1項之設備，其中該氣動汽缸為一電漿處理腔室中之銷升降器的一部份。
  10. 一種用以處理基板的設備，包含： 一電漿處理腔室，包含： 一腔室壁，形成一電漿處理腔室封閉空間； 一基板固持器，用以支持一基板於該電漿處理腔室封閉空間中； 一壓力調節器，用以調節該電漿處理腔室封閉空間中的壓力； 至少一電極，用以提供功率至該電漿處理腔室封閉空間而維持電漿； 一氣體入口，用以提供氣體至該電漿處理腔室封閉空間中；以及 一氣體出口，用以將氣體從該電漿處理腔室封閉空間中排出； 至少一RF功率來源，電氣連接至該至少一電極； 一氣體來源，與該氣體入口流體連接； 一升降器，用以移動該基板； 一氣動汽缸，連接至該升降器； 一歧管，具有一供應埠與一排氣埠，並且可控制地連接至該氣動汽缸； 一乾燥氣體供應器，與該歧管的排氣埠流體連接並提供正壓至該歧管的排氣埠；以及 一控制器，可控制地連接至該氣體來源、該至少一RF功率來源、及該歧管。
  11. 如申請專利範圍第10項之用以處理基板的設備，其中該歧管的排氣埠與該乾燥氣體供應器之間的流體連接包含： 一排氣調節器，與該乾燥氣體供應器流體連接；以及 一儲存器，連接在該排氣調節器與該歧管的排氣埠之間。
  12. 如申請專利範圍第11項之用以處理基板的設備，更包含一供應調節器，連接在該乾燥氣體供應器與該歧管的供應埠之間，並與該排氣調節器並聯。
  13. 如申請專利範圍第12項之用以處理基板的設備，更包含一槽體，與該乾燥氣體供應器流體連接，並與該排氣調節器及該供應調節器並聯。
  14. 如申請專利範圍第13項之用以處理基板的設備，其中該乾燥氣體供應器為乾燥空氣供應器或N2 供應器。
  15. 如申請專利範圍第14項之用以處理基板的設備，其中該氣動汽缸為一電漿處理腔室中一升降銷的一部份。
  16. 如申請專利範圍第11項之用以處理基板的設備，其中該儲存器具有一容量且該氣動汽缸吸進一容量，其中該儲存器之容量為該氣動汽缸吸進之容量的至少三倍。
  17. 如申請專利範圍第10項之用以處理基板的設備，其中該乾燥氣體供應器為乾燥空氣供應器或N2 供應器。
  18. 如申請專利範圍第10項之用以處理基板的設備，其中該氣動汽缸為一電漿處理腔室中一升降銷的一部份。
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