TW201723222A - 由第一金屬製成且具有由第二金屬製成之外鞘層之線的製造方法 - Google Patents

由第一金屬製成且具有由第二金屬製成之外鞘層之線的製造方法 Download PDF

Info

Publication number
TW201723222A
TW201723222A TW105122098A TW105122098A TW201723222A TW 201723222 A TW201723222 A TW 201723222A TW 105122098 A TW105122098 A TW 105122098A TW 105122098 A TW105122098 A TW 105122098A TW 201723222 A TW201723222 A TW 201723222A
Authority
TW
Taiwan
Prior art keywords
metal
wire
container
line
coating composition
Prior art date
Application number
TW105122098A
Other languages
English (en)
Other versions
TWI640652B (zh
Inventor
優爾根 史查夫
克莉絲汀 貝爾
史蒂芬 凱斯
史文 湯瑪斯
Original Assignee
賀利氏德國有限責任兩合公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 賀利氏德國有限責任兩合公司 filed Critical 賀利氏德國有限責任兩合公司
Publication of TW201723222A publication Critical patent/TW201723222A/zh
Application granted granted Critical
Publication of TWI640652B publication Critical patent/TWI640652B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1619Apparatus for electroless plating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1619Apparatus for electroless plating
    • C23C18/1632Features specific for the apparatus, e.g. layout of cells and of its equipment, multiple cells
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1689After-treatment
    • C23C18/1692Heat-treatment
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/02Tanks; Installations therefor
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48After-treatment of electroplated surfaces
    • C25D5/50After-treatment of electroplated surfaces by heat-treatment
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/06Wires; Strips; Foils
    • C25D7/0607Wires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/43Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/745Apparatus for manufacturing wire connectors
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/48Electroplating: Baths therefor from solutions of gold
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/50Electroplating: Baths therefor from solutions of platinum group metals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • H01L2224/432Mechanical processes
    • H01L2224/4321Pulling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • H01L2224/438Post-treatment of the connector
    • H01L2224/43848Thermal treatments, e.g. annealing, controlled cooling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45155Nickel (Ni) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45565Single coating layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45639Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45644Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45655Nickel (Ni) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45664Palladium (Pd) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45669Platinum (Pt) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45673Rhodium (Rh) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • H01L2224/456Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45676Ruthenium (Ru) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Metal Extraction Processes (AREA)
  • Chemically Coating (AREA)

Abstract

本發明係關於一種用於塗覆由選自由銅、銀、金、鎳及該等金屬之任一者與至少一種其他金屬之合金所組成之群之金屬1製成,具有由不同於金屬1且選自由鎳、銀、金、釕、鉑、鈀、銠及該等金屬之任一者與至少一種其他金屬之合金所組成之群之金屬2製成的外鞘層之線之方法,其包括以下步驟:(a)提供由金屬1製成之具有在75至200,000μm2範圍內之橫截面積之線;(b)提供具有用於該線之進口之容器,其中該進口之輪廓對應於待包鞘之該線之輪廓或形成至多20μm寬之封包至少部分該線輪廓之間隙;(c)將該線插入該進口;(d)將非常適合施覆由不同於金屬1之金屬2製成之外鞘層之液體塗覆組合物放置於該容器中;(e)引導該線以直路徑通過該液體塗覆組合物及該容器且將該經塗覆之線自該容器退出;及(f1)乾燥於步驟(e)中塗覆之該線或(f2)使於步驟(e)中塗覆之該線接受熱處理;其中(i)該液體塗覆組合物係允許無電施覆金屬2至由金屬1製成之基材之組合物或(ii)該線係接線作為陰極且該液體塗覆組合物係允許接線作為陰極且由金屬1製成之基材經金屬2電鍍之組合物。

Description

由第一金屬製成且具有由第二金屬製成之外鞘層之線的製造方法
本發明係關於藉由以第二金屬(=金屬2)製成之外鞘層塗覆由第一金屬(=金屬1)製成之線製造芯鞘線之方法。
自例如US 2009/0188696 A1或EP 2 221 861 A1可知芯鞘接合線,其具有金屬芯及由不同的且一般比該芯之金屬更貴之金屬製成之金屬外鞘層。提及電鍍沉積(電鍍)作為一種製造該外鞘層之方法。
根據本發明之用於製造由金屬1製成且具有由金屬2製成之外鞘層之線之方法係一種塗覆方法。更具體而言,其係一種用於塗覆由選自由銅、銀、金、鎳及該等金屬之任一者與至少一種其他金屬之合金所組成之群之金屬1製成,具有由係不同於金屬1且係選自由鎳、銀、金、釕、鉑、鈀、銠及該等金屬之任一者與至少一種其他金屬之合金所組成之群之金屬2製成之外鞘層之線之方法,其包括以下步驟:(a)提供由金屬1製成之具有在75至200,000μm2範圍內之橫截面積之線;(b)提供具有用於該線之進口之容器,其中該進口之輪廓對應於待包鞘之該線之輪廓或形成至多20μm寬之封包至少部分該線輪廓之間隙;(c)將該線插入該進口;(d)將非常適合施覆由不同於金屬1之金屬2製成之外鞘層之液體 塗覆組合物放置於該容器中;(e)引導該線以直路徑通過該液體塗覆組合物及該容器且將該經塗覆之線自該容器退出;及(f1)乾燥於步驟(e)中塗覆之該線或(f2)使於步驟(e)中塗覆之該線接受熱處理;其中(i)該液體塗覆組合物係允許無電施覆金屬2至由金屬1製成之基材之組合物或(ii)該線係接線作為陰極及該液體塗覆組合物係允許接線作為陰極且由金屬1製成之基材經金屬2電鍍之組合物。
於根據本發明之方法之步驟(a)中,提供具有75至200,000μm2之橫截面積且由金屬1製成之線。該線之橫截面積可例如為矩形、橢圓形或圓形,例如可為圓形。較佳地,此關於具有在例如10至500μm範圍內之直徑之圓線。
金屬1係銅、銀、金、鎳或該等金屬之任一者與至少一種其他金屬之合金。在純銅、銀、金或鎳之情況下,此係關於99.0至99.99重量%之純度,而在此內文中,合金應理解為意指基礎金屬銅、銀、金或鎳佔該合金>50至<99重量%。可行合金金屬之實例係銅、銀、金、鎳、鋅、錫、銻、及錳。
熟習此項技術者知曉此類型之線。特定言之,其等可藉由提供金屬1,即呈具有所需純度之金屬或呈具有所需組成之金屬合金製造,藉此線前驅體,例如具有在3至300mm範圍內之直徑之圓線前驅體可藉由鑄造以常見方式製造。可使此類型之線前驅體隨後接受常見軋延、拉線及/或退火步驟以最終形成根據步驟(a)所提供之該線。
一般而言,有利的是提供該線以具有清潔金屬表面,例如輔助物質及其他雜質已移除,例如去油脂及/或氧化物已移除。產生清潔 金屬表面之方法為熟習此項技術者所知曉且不必詳細說明;出於例示性目的,本文將提及酸洗法、電解清潔法、及浸泡清潔法。
於步驟(a)中提供之該線及/或圓線之橫截面積及/或直徑可分別係其最終橫截面積及/或最終直徑。特定言之,此為以下情況:就具有上述指定範圍(為75至200,000μm2及/或10至500μm)之下限之橫截面積之線或直徑之圓線而言,例如就該線之橫截面積而言在75至2,000μm2範圍內及/或就該圓線之直徑而言在10至50μm範圍內。施覆由金屬2製成之該外鞘層至由金屬1製成之已經具有其最終橫截面積或最終直徑之線及/或圓線上之能力係根據本發明之方法之優點之一,特定言之,鑑於至少大程度上防止該外鞘層之外表面之損傷。此外,藉助EBSD(電子背散射衍射)及/或電子顯微鏡可視之此實施例之該外鞘層之晶粒不含偏好方向,而是形成位於該外鞘層之下的金屬1的晶粒結構。
較佳實施例使用於步驟(a)中提供之具有最終橫截面積之線及/或具有最終直徑之圓線實施根據本發明之方法。
就具有指定範圍上限之橫截面積之線或直徑之圓線而言,例如該線之橫截面積在700至200,000μm2範圍內及/或該圓線直徑在30至500μm範圍內,在完成步驟(f1)及/或(f2)之後進行達到更低最終橫截面積及/或更低最終直徑之縮減且同時例如經由常見拉線延伸該經包鞘之線及/或圓線係可行的。不同於先前部分描述之情況,藉助EBSD及/或電子顯微鏡可視之外鞘層之晶粒顯示在該線方向上延伸之取向及/或偏好方向。
通常地,於步驟(a)中提供之該線係以捲起形式提供。
於根據本發明之方法之步驟(b)中,提供具有進口之容器,該進口對應於於步驟(a)中提供之該經包鞘之線之輪廓或形成至多20μm,較佳至多10μm寬之封包至少部分,較佳全部之該線輪廓之間隙。封 包部分該線輪廓之間隙應理解為意指該線觸及該進口之邊緣,但並非以其整個輪廓,而完全封包該線輪廓之間隙應理解為意指該線不觸及該進口。提及形成完全間隙,較佳的是周邊間隙具有最大均一寬度,對應於在該進口中待包鞘之線之中心定位。
由於適合施覆由不同於金屬1之金屬2製成之外鞘層的該液體塗覆組合物之化學/物理性質之協同動作,以上指定之間隙尺寸使該容器充分密封,特定言之於步驟(e)期間,即阻止該液體塗覆組合物洩漏。
原則上,不存在關於該容器之材料的選擇限制。已證明塑膠係特別有利的。該容器可基本上為任意形狀;其只需允許步驟(e)能實施。具有特定言之配置於圓柱之底表面之中心之進口的圓柱形容器係有利的。有利地,形成該進口之邊緣之材料係硬材料,特定言之具有比金屬1更高硬度的材料。例如,該硬材料可為金剛石或紅寶石。例如,可使用具有形成該容器之進口之對應孔洞之金剛石。此外,有利的是該材料,特定言之該硬材料係不導電(導電率<10-8S/m);例如金剛石或紅寶石符合兩種性質。
已證明使用拉模(例如來自BALLOFFET)作為給該容器配備該進口之方式係特別有利的。例如,可使用如用於拉線般使用之常見拉模。例如,可使用由具有安裝在其上之包括對應輪廓之孔洞之金剛石之鈦或不銹鋼組成之拉模。
該容器可係敞開。於一實施例中,該容器具有相對於該進口輪廓上對稱地配置且同時包括與該進口共同之旋轉軸之出口,其用於該經塗覆之線自該容器退出,即用於該經塗覆之線在於步驟(e)過程中以直路徑穿過該容器後退出該容器;實務上可見,此配置意指該線可以直路徑穿過該容器,即無需彎折、彎曲、扭結、及纏繞,且以最短路徑自該進口至該出口。進口及出口之該配置很大程度上確保在塗覆 前或後該線表面沒有接觸及可能之機械損傷。
在本文中,該出口之輪廓可對應於自該容器退出之該經塗覆之線之輪廓或其可形成最多20μm寬之至少部分,較佳完全封包其之間隙。該出口可以與該進口相同之方式實施。
於根據本發明之方法之步驟(c)中,就具有比該線更大之橫截面積及/或更大之輪廓之進口而言,於步驟(a)中提供之該線較佳於中心位置插入該進口。該線之插入提供上文提及之該容器之充分密封之基礎。
於根據本發明之方法之步驟(d)中,將非常適用於施覆由不同於金屬1之金屬2製成之外鞘層之液體塗覆組合物放置於該容器內。在步驟(c)之後進行步驟(d)是有利的。
就根據本發明之方法之實施例(i)而言,該液體塗覆組合物係允許無電施覆金屬2至由金屬1製成之基材或線之組合物,即允許以元素、金屬形式直接施覆金屬2至金屬1表面上之組合物。金屬2為鈀及/或金之此類型組合物之實例係由Umicore製造之Palluna® IP1及/或由Schlötter製造之SLOTOGOLD 10。
就根據本發明之方法之實施例(ii)而言,該液體塗覆組合物係允許接線作為陰極之由金屬1製成之基材或線經金屬2電鍍之組合物,即允許以元素、金屬形式直接施覆金屬2至金屬1表面上之組合物。特定言之,此可關於含呈溶解鹽之金屬2之組合物水溶液。金屬2為鈀之此類型組合物之實例係由Umicore製造之Palluna® 458及Palluna® ACF 800、及由Atotech製造之Pallacor® HT。金屬2為金之此類型組合物之實例係由Atotech製造之Aurocor® K 24 HF及由Umicore製造之Auruna® 558及Auruna® 559。
該液體塗覆組合物之添加量係足以確保步驟(e)之成功實施。在本文中,該容器可部分或完全填充。
提供具有用於保持該液體塗覆組合物之填充量及/或組成很大程度上恆定之設施之容器使得在步驟(e)期間之液體塗覆組合物及/或其組分之消耗或施配在進行操作期間可補償可係有利的。例如,可使用用於回收該液體塗覆組合物之設施及/或用於在步驟(e)期間施配之該液體塗覆組合物或其組分之再給料之設施。
於根據本發明之方法之步驟(e)中,於步驟(c)中插入該進口之該線以直路徑穿過該容器,即無需彎折、彎曲、扭結、及纏繞,且因此亦穿過於步驟(d)中放置於該容器內之該液體塗覆組合物。在穿過該液體塗覆組合物之後,該線以筆直且經塗覆之形式,即以經由金屬2製成之外鞘層塗覆之形式退出該容器。換言之,於步驟(e)中直接施覆呈金屬2金屬2。若該容器具有相對於其進口輪廓上對稱地配置且同時包括與該進口共同之旋轉軸之出口,則該經塗覆之線穿過後者退出該容器。
傳送線或,更具體而言,於該液體塗覆組合物內之各線增量之接觸時間係在例如0.005至50秒,特定言之0.01至10或0.02至5秒範圍內,且源自引導該線穿過該液體塗覆組合物之速度及該線及/或各線增量在該液體塗覆組合物中行進之距離。若經引導穿過該液體塗覆組合物之該線為豎直取向,則此對應於各線增量在該液體塗覆組合物中行進之距離、在該容器內之該液體塗覆組合物之填充液面或液柱。
通常藉由常見返回輪及線圈系統驅動該線穿過該液體塗覆組合物。在本文中,線速度或,更具體言之,該線之傳送速度係在例如0.5至200m/min,特定言之5至150m/min或10至100m/min範圍內。該容器及/或經引導以直路徑穿過該容器及存在於其中之該液體塗覆組合物之該線,可為水平或豎直取向或為任意中間取向。豎直取向係較佳,特定言之,該線之運動方向為向上。
提及根據本發明之方法之實施例(ii),該實施例涉及允許由金屬1 製成且接線作為陰極之基材或線經金屬2電鍍的液體塗覆組合物,該線可接線作為陰極,例如,有利地,藉助接線作為陰極之卷軸上之(例如金屬)接觸件可因此能夠塗覆該線,即用金屬2直接電鍍該線。為了防止短路,形成該進口之邊緣之材料係不導電或非活性(電絕緣)。在本文中,圍繞形成該進口之邊緣之不導電材料(例如金剛石或紅寶石)之導電環可接線作為反陽極;例如拉模之外金屬邊緣係可設想作為導電環。此外或或者,可使用一或多個輔助陽極,例如可使用由例如不銹鋼或鍍鈦製成且配置於該液體塗覆組合物中及穿過其之該線之附近之輔助陽極。用金屬2電鍍穿過該液體塗覆組合物之該線可於在例如0.2至20V範圍內之直流電壓下於在例如0.001至5A,特定言之0.001至1A或0.001至0.2A範圍內之電流下進行。用於本文之電流密度可係在例如0.01至150A/dm2範圍內。
由金屬2製成之該外鞘層之厚度,即於步驟(e)中直接施覆至金屬1之表面上之元素金屬2之層之厚度係在例如單層金屬2之厚度至5,000nm或例如1至5,000nm範圍內且可按需調整。
於根據本發明之方法之實施例(i)中,該實施例涉及允許藉由無電施覆施覆金屬2至由金屬1製成之該線之液體塗覆組合物,由金屬2製成之該外鞘層之厚度基本上可經由下列參數調整:該液體塗覆組合物之化學組成、在步驟(e)期間之溫度、線與液體塗覆組合物之接觸時間。在本文中,該層之厚度可通常藉由增加形成金屬2之該液體塗覆組合物之化學組分之濃度、藉由增加在步驟(e)期間之溫度、及藉由增加線與液體塗覆組合物之接觸時間來增加。
於根據本發明之方法之實施例(ii)中,該實施例涉及允許接線作為陰極之由金屬1製成之基材及/或線經金屬2電鍍之液體塗覆組合物,由金屬2製成之該外鞘層之厚度基本上可經由下列參數調整:該液體塗覆組合物之化學組成、用作塗層之該線與該液體塗覆組合物之 接觸時間、電流密度。在本文中,該層之厚度可通常藉由增加該液體塗覆組合物中該(等)金屬2之鹽之濃度、藉由增加接線作為陰極之該線與該液體塗覆組合物之接觸時間、及藉由增加該電流密度來增加。
因此,於根據本發明之方法之兩個實施例(i)及(ii)中,處理步驟(e)係在以元素金屬形式施覆金屬2至金屬1線之表面期間之步驟。換言之,該金屬2外鞘層無需於步驟(e)之後續步驟中以其元素金屬形式形成。
若適用,沖洗步驟可在完成步驟(e)與步驟(f1)及/或(f2)之間,例如以浸泡沖洗或噴淋沖洗之形式進行。若於步驟(e)中使用之該液體塗覆組合物係水溶液,則使用水作為沖洗介質係有利的,以醇及醇/水混合物為清洗介質之其他實例。若於步驟(e)中使用之該液體塗覆組合物係非水性,通常不進行沖洗。
根據本發明之方法不需要在步驟(e)與(f1)及/或(e)與(f2)之間的中間捲起該線。就此而言,無在步驟(e)與(f1)或(f2)之間的中間捲起該線下實施根據本發明之方法係較佳實施例。根據本發明之方法可經設計為不僅由於施覆由金屬2製成之該外鞘層至由金屬1製成且已經具有其最終橫截面積之線及/或具有其最終直徑之圓線之上述可行性,而且從製備態樣亦尤其有效。
於步驟(f1)之實施例中,於步驟(e)中塗覆之該線,即具有以由金屬2製成之外鞘層之形式之塗層之該線係僅進行乾燥。
根據步驟(f1)之乾燥可在例如20至150℃範圍內之溫度或熔爐溫度下進行。
在以步驟(f1)及/或(f2)之內文之描述及技術方案中使用之術語「溫度」或「熔爐溫度」應理解為各意指對應氛圍之溫度。
在乾燥期間,自該經塗覆之線及/或其塗層(即金屬2外鞘層)移除有機溶劑及/或水。乾燥可例如在連續爐,特定言之在管型爐中進 行。
根據本發明之方法之變型之實施包括使用於步驟(a)中提供之包括最終橫截面積之線及/或包括最終直徑之圓線之步驟(f1),可防止或至少很大程度上防止在金屬1與金屬2的接觸表面之間形成擴散區。
於根據本發明之方法之步驟(f2)之實施例中,使於步驟(e)中塗覆之該線接受熱處理。
根據步驟(f2)之熱處理可在例如100至800℃範圍內之溫度或熔爐溫度下進行。
熱處理應理解為意指該線達到不僅乾燥,若需要,亦可如下所述之化學及/或物理地改變該線或其塗層(即該金屬2外鞘層)之溫度。乾燥可例如在連續爐,特定言之在管型爐中進行。
出於乾燥或熱處理之目的穿過連續爐之該線或,更具體而言,各線增量之通量時間係在例如0.001至60秒,特定言之0.01至10秒或0.02至5秒範圍內且係成連續爐之整體長度及該線穿過該連續爐之速度之函數。
可實施步驟(f2),例如若不僅乾燥,而且亦將進行由金屬2包鞘之該線之並行退火。此可為以下情況:例如,藉助金屬1或金屬1之組分擴散至金屬2及/或金屬2或金屬2之組分擴散至金屬1而在該線芯之金屬1與該線鞘之金屬2之間形成擴散域是否所需。在此情況中,熔爐溫度係在例如150至800℃範圍內。相應地,例如,若該塗覆藉由用來自對應塗覆組合物之金屬2電鍍由金屬1製成且接線作為陰極之線進行,則可考慮步驟(f2)。在本文中,使用惰性或還原性熔爐氛圍可係有利的。
完成步驟(a)至(f1)及/或(a)至(f2)後獲得該芯-鞘線,其特徵在於其外鞘層係非常均質、厚度均勻及不含或基本上不含機械損傷之跡象,且其係特別適合用作接合線。
若根據根據本發明之方法以由金屬1製成且具有由金屬2製成之外鞘層之線之形式製造之芯-鞘線不經直接處理或不直接用於接合,則其通常以慣常方式捲起且以此形式遞送至處理器或用戶。處理在本文中應理解為意指,特定言之,拉線、退火、軋延、施覆由相同於或不同於1型之金屬、相同於或不同於2型之金屬或不同於金屬1及金屬2之金屬製成之一或多種其他金屬外鞘層。在本文中,熟習此項技術者能一目了然當應用根據本發明之方法之原理時,施覆其他金屬外鞘層,特定言之,亦可進行。
實例
實例1(製備銅芯-鈀鞘線):
將由4N銅(99.99重量%銅)製成且具有20μm直徑之圓線夾在放線裝置且引導至可接線作為陰極之接觸輥上。在本文中,將該圓線自下通過位於豎直配置之圓柱形塑膠容器(內直徑40mm,長140mm)之底部之進口引入且引導其以直路徑穿過該容器。該進口由裝有包括具有25μm直徑之孔之金剛石之常用拉模(自BALLOFFET購得)組成。該容器亦包含由鍍鈦製成之圓輔助陽極。退出該容器後,以類似方式引導該圓線通過相同設計之第二沖洗容器。隨後,該圓線穿過長60cm、溫度控制在130℃之管型爐,且連接至收線裝置之線圈。該圓線之運行方向係自底部至頂部,其具有以下自底部至頂部之順序之配置:接觸輥,容器1;容器2,管型爐,收線裝置。依照生產商指引,使用具有6.5 pH值及12g/L鈀含量之Palluna® ACF 800溶液將包括該輔助陽極之較低容器1填充至邊緣。將該溶液之溫度調整至60℃。用水填充配置於其上之沖洗容器2。該接觸輥連接至直流電源之負極,而在容器1中之輔助陽極連接至直流電源之正極。接著,打開該收線裝置且線速度設定為15m/min。該直流電源設定為10mA電流。
依此方式,獲得由銅製成且具有20nm厚度之均勻鈀外鞘層之圓 線,其在電子顯微鏡檢查下大體上不含損傷(沒有劃線標記,在該鈀層中沒有裂縫或斷裂)。
實例2(製備銅芯-金鞘線):
依照生產商指引,該程序係類似於實例1之程序,除了放置具有7.5 pH值及15g/L金含量之Auruna® 559溶液至容器1及該塗覆過程係在70℃及15mA之電流下進行。
依此方式,獲得由銅製成且具有20nm厚度之均勻金外鞘層之圓線,其在電子顯微鏡檢查下大體上不含損傷(沒有劃線標記,在該金層中沒有裂縫或斷裂)。

Claims (18)

  1. 一種用於塗覆由選自由銅、銀、金、鎳及該等金屬之任一者與至少一種其他金屬之合金所組成之群之金屬1製成,具有由不同於金屬1且選自由鎳、銀、金、釕、鉑、鈀、銠及該等金屬之任一者與至少一種其他金屬之合金所組成之群之金屬2製成的外鞘層之線之方法,其包括以下步驟:(a)提供由金屬1製成,具有在75至200,000μm2範圍內之橫截面積之線;(b)提供具有用於該線之進口之容器,其中該進口之輪廓對應於待包鞘之該線之輪廓或形成至多20μm寬之封包至少部分該線輪廓之間隙;(c)將該線插入該進口;(d)放置非常適合施覆由不同於金屬1之金屬2製成之外鞘層之液體塗覆組合物於該容器中;(e)引導該線以直路徑通過該液體塗覆組合物及該容器且將該經塗覆之線自該容器退出;及(f1)乾燥於步驟(e)中塗覆之該線或(f2)使於步驟(e)中塗覆之該線接受熱處理;其中(i)該液體塗覆組合物係允許無電施覆金屬2至由金屬1製成之基材之組合物或(ii)該線係接線作為陰極且該液體塗覆組合物係允許接線作為陰極且由金屬1製成之基材經金屬2電鍍之組合物。
  2. 如請求項1之方法,其不涉及於步驟(e)與(f1)或(f2)之間的中間捲起該線。
  3. 如請求項1之方法,其中於步驟(a)中提供之該線係具有在10至500μm範圍內之直徑之圓線。
  4. 如請求項3之方法,其中於步驟(a)中提供之該圓線具有其最終直徑。
  5. 如請求項1之方法,其中於步驟(a)中提供之該線具有其最終橫截面積。
  6. 如請求項1之方法,其中形成該進口邊緣之材料係具有比金屬1更高硬度之硬材料。
  7. 如請求項6之方法,其中該硬材料係金剛石或紅寶石。
  8. 如請求項6之方法,其中該硬材料係不導電的。
  9. 如請求項1之方法,其中使用拉模作為給該容器配備該進口之構件。
  10. 如請求項1之方法,該容器具有相對於該進口輪廓上對稱地配置且同時包括與該進口共同之旋轉軸之出口,其用於使該經塗覆之線自該容器退出。
  11. 如請求項1之方法,在該液體塗覆組合物中各線增量之接觸時間係在0.005至50秒範圍內。
  12. 如請求項1之方法,其中當引導該線通過該容器及存在於其中之該液體塗覆組合物時,該線係豎直取向。
  13. 如請求項12之方法,其中該線係經向上移動。
  14. 如請求項1之方法,由金屬2製成之該外鞘層的厚度係在單層金屬2之厚度至5,000nm範圍內。
  15. 如請求項1之方法,根據步驟(f1)之乾燥係於20至150℃範圍內之溫度下進行。
  16. 如請求項1之方法,根據步驟(f2)之處理係於100至800℃範圍內之溫度下進行。
  17. 一種根據如請求項1至16中任一項之方法製造的芯鞘線。
  18. 一種根據如請求項1至16中任一項之方法製造的芯鞘線之用途,其用作接合線。
TW105122098A 2015-07-13 2016-07-13 由第一金屬製成且具有由第二金屬製成之外鞘層之線的製造方法 TWI640652B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
??15176473.5 2015-07-13
EP15176473.5A EP3118353A1 (de) 2015-07-13 2015-07-13 Verfahren zur herstellung eines drahtes aus einem ersten metall mit einer mantelschicht aus einem zweiten metall

Publications (2)

Publication Number Publication Date
TW201723222A true TW201723222A (zh) 2017-07-01
TWI640652B TWI640652B (zh) 2018-11-11

Family

ID=53879295

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105122098A TWI640652B (zh) 2015-07-13 2016-07-13 由第一金屬製成且具有由第二金屬製成之外鞘層之線的製造方法

Country Status (5)

Country Link
EP (2) EP3118353A1 (zh)
JP (1) JP6532550B2 (zh)
CN (2) CN107660239A (zh)
TW (1) TWI640652B (zh)
WO (1) WO2017008956A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG10201607523RA (en) * 2016-09-09 2018-04-27 Heraeus Materials Singapore Pte Ltd Coated wire

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2370973A (en) * 1941-11-22 1945-03-06 William C Lang Method and apparatus for producing coated wire
US2445675A (en) * 1941-11-22 1948-07-20 William C Lang Apparatus for producing coated wire by continuous process
FR1172255A (fr) * 1957-02-08 1959-02-09 Trefileries Et Laminoirs De Pr Noircissement mat des fils métalliques très fins
DE2447584C2 (de) * 1974-10-05 1983-01-05 Steuler Industriewerke GmbH, 5410 Höhr-Grenzhausen Verfahren und Vorrichtung zur elektrolytischen Metallummantelung von Aluminiumdraht
JPS5687468U (zh) * 1979-12-05 1981-07-13
JPS61214454A (ja) * 1985-03-19 1986-09-24 Nippon Mining Co Ltd 半導体装置用ボンデイングワイヤ
GB9309521D0 (en) * 1993-05-08 1993-06-23 United Wire Ltd Improved method
US6261436B1 (en) * 1999-11-05 2001-07-17 Asep Tec Co., Ltd. Fabrication method for gold bonding wire
JP2003197668A (ja) * 2001-12-10 2003-07-11 Senmao Koochii Kofun Yugenkoshi 半導体パッケージ用のボンディングワイヤ及びその製造方法
US7131308B2 (en) * 2004-02-13 2006-11-07 3M Innovative Properties Company Method for making metal cladded metal matrix composite wire
KR101016158B1 (ko) 2005-01-05 2011-02-17 신닛테츠 마테리알즈 가부시키가이샤 반도체 장치용 본딩 와이어
SG10201401960RA (en) 2007-07-24 2014-06-27 Nippon Steel & Sumikin Mat Co Semiconductor device bonding wire
TW201430977A (zh) * 2013-01-23 2014-08-01 Heraeus Materials Tech Gmbh 用於接合應用的經塗覆線材
CN104419915A (zh) * 2013-08-30 2015-03-18 江苏中江焊丝有限公司 化镀装置
CN105745356A (zh) * 2013-11-21 2016-07-06 贺利氏德国有限两合公司 用于接合应用的涂覆线
CN204417623U (zh) * 2014-12-11 2015-06-24 重庆材料研究院有限公司 难熔金属丝的镀金装置

Also Published As

Publication number Publication date
JP6532550B2 (ja) 2019-06-19
CN107660239A (zh) 2018-02-02
EP3322840A1 (de) 2018-05-23
TWI640652B (zh) 2018-11-11
WO2017008956A1 (de) 2017-01-19
JP2018525519A (ja) 2018-09-06
CN114000127A (zh) 2022-02-01
EP3118353A1 (de) 2017-01-18

Similar Documents

Publication Publication Date Title
CN102756188A (zh) 用于电火花加工的焊丝及其制造方法
JP2012089481A (ja) 異方導電性部材
JP5467374B2 (ja) 軸体に電気めっきを形成するための装置、めっき皮膜を有する軸体の製造方法および軸体上に亜鉛系めっき皮膜を形成するためのめっき液
TWI640652B (zh) 由第一金屬製成且具有由第二金屬製成之外鞘層之線的製造方法
KR20140051734A (ko) 방전가공용 전극선 및 그 제조방법
JP5786042B2 (ja) ボンディングワイヤ及びその製造方法
US20120028073A1 (en) Process for electroplating of copper
CN104716118B (zh) 一种极微细镀钯铜键合丝及其制作方法
JP3180660B2 (ja) 長尺金属管内面めっき方法
JPH0741991A (ja) 超極細複合金属めっき線の製造装置
JP2013172032A (ja) ボンディングワイヤの製造方法
TWI544109B (zh) 利用浸鍍的金剛石附著方法及利用於此的金剛石附著裝置
JP5719687B2 (ja) 無電解めっき装置、無電解めっき方法および配線回路基板の製造方法
JPS60121263A (ja) 放電加工用電極線の製造方法
JP7144937B2 (ja) 配線回路基板の製造方法
TWI565574B (zh) 晶圓切割線材的製造方法及其電鍍處理設備
JP5941525B2 (ja) 表面処理鋼板の製造方法
JPH01246020A (ja) 放電加工用ワイヤ電極の製造方法
JP2014162979A (ja) 表面処理鋼板の製造方法
JP2002266098A (ja) めっき装置、及び半導体装置の製造方法
KR100481950B1 (ko) 흑연 코팅 방전 가공용 전극선 제조방법
FR2995617A1 (fr) Procede de revetement de conducteurs electriques en aluminium
CN104955601B (zh) 在镍亚层之间具有氧化镍界面的固定磨料锯线
JP2002208323A (ja) 極細線または被覆極細線の製造方法
JPH11117051A (ja) 耐雷電線の製造方法