TW201714206A - 磊晶層的形成方法 - Google Patents
磊晶層的形成方法 Download PDFInfo
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- TW201714206A TW201714206A TW105106530A TW105106530A TW201714206A TW 201714206 A TW201714206 A TW 201714206A TW 105106530 A TW105106530 A TW 105106530A TW 105106530 A TW105106530 A TW 105106530A TW 201714206 A TW201714206 A TW 201714206A
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- epitaxial layer
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- 238000000034 method Methods 0.000 title claims abstract description 53
- 238000000407 epitaxy Methods 0.000 title abstract 2
- 239000012159 carrier gas Substances 0.000 claims abstract description 15
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 33
- 229910052732 germanium Inorganic materials 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 28
- 238000007740 vapor deposition Methods 0.000 claims description 23
- 239000001307 helium Substances 0.000 claims description 20
- 229910052734 helium Inorganic materials 0.000 claims description 20
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 20
- 239000007789 gas Substances 0.000 claims description 14
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 239000012495 reaction gas Substances 0.000 claims description 4
- 229910003902 SiCl 4 Inorganic materials 0.000 claims description 3
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 abstract 2
- 229910052805 deuterium Inorganic materials 0.000 abstract 2
- 125000004431 deuterium atom Chemical group 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000001947 vapour-phase growth Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000005389 semiconductor device fabrication Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
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Abstract
本發明提出了一種磊晶層的形成方法,在採用氣相沉積法形成磊晶層時,使用包括氘氣的載氣,由於處於氘氣的環境中,能夠使形成的磊晶層內部存有氘原子,在後續閘氧化層或裝置的形成時,氘原子能夠擴散出,並與介面處等懸鍵進行結合,形成較為穩定的結構,從而避免熱載子效應的發生,提高裝置的性能。
Description
本發明係關於半導體製造領域,尤其係關於一種磊晶層的形成方法。
在半導體裝置製造領域,通常會在矽基板上形成一層單晶矽作為磊晶層,磊晶層能夠在後續進行離子注入摻雜,形成注入基區、發射區等等。
隨著現代微電子裝置的尺寸不斷收縮,對磊晶層的品質挑戰逐漸增大。而磊晶層的品質取決於生長在其內部微小缺陷(microdefects)的大小和分佈情況。在磊晶層的形成過程中,大多數微小缺陷會聚集矽內部空隙(silicon-vacancies)或者填在間隙之中。
使用氫氣形成鈍化層在半導體裝置製造領域已經是被廣為所知並且常用的技術手段。在氫鈍化過程中,能夠去除缺陷對半導體裝置的影響。例如,該種缺陷被描述為複合或者半導體裝置中心的活性成分。這些中心是由懸鍵造成,該懸鍵能夠去除電荷載體或者引入不必要的電荷載體,這部分主要取決於偏壓。而懸鍵主要發生在表面或裝置的介面,同時其也能夠發生在空缺、微孔隙等處,其也與雜質相關。
在半導體製造領域中,還存在由熱載子引起的裝置性能下降的問題。該問題在小尺寸裝置及高壓裝置中尤其重要。當使用高壓裝置時,通道內的載子具有較大的能量能夠穿透進入絕緣層,從而使裝置的性能變差。
由於氫氣形成的鈍化層不太穩定,在與懸鍵進行鍵合後,極易被破壞,從而使懸鍵再次暴露出,從而影響裝置的性能。
本發明的目的在于提供一种磊晶層的形成方法,能夠減少後續裝置介面層的懸鍵,提高裝置的性能。
為了實現上述目的,本發明提出了一種磊晶層的形成方法,包括步驟:提供矽基板;在所述矽基板表面形成一層磊晶層,所述磊晶層採用氣相沉積法形成,其中載氣包括氘氣。
在所述的磊晶層的形成方法中,所述氣相沉積法的溫度範圍為800℃~1100℃。
在所述的磊晶層的形成方法中,所述氣相沉積法使用的載氣為氘氣和氫氣的混合氣體。
在所述的磊晶層的形成方法中,所述氘氣占的比例範圍為1%~100%。
在所述的磊晶層的形成方法中,所述氣相沉積法使用的載氣為氘氣。
在所述的磊晶層的形成方法中,所述磊晶層為單晶矽。
在所述的磊晶層的形成方法中,所述氣相沉積法使用的反應氣體為包含矽元素的氣體。
在所述的磊晶層的形成方法中,所述氣相沉積法使用的反應氣體為SiH4、Si2H6、SiH2Cl2、SiHCl3、SiCl4或Si(CH3)4。
在所述的磊晶層的形成方法中,提供所述矽基板之後,在形成磊晶層之前,還包括步驟:去除所述矽基板表面的自然氧化層;對所述矽基板進行清洗。
在所述的磊晶層的形成方法中,採用濕式或者乾式蝕刻去除所述矽基板表面的自然氧化層。
與現有技術相比,本發明的有益效果主要落實於:在採用氣相沉積法形成磊晶層時,使用包括氘氣的載氣,由於處於氘氣的環境中,能夠使形成的磊晶層內部存有氘原子,在後續閘氧化層或裝置的形成時,氘原子能夠擴散出,並與介面處等懸鍵進行結合,形成較為穩定的結構,從而避免載子的穿透,提高裝置的性能。
S100‧‧‧提供矽基板
S200‧‧‧在所述矽基板表面形成一層磊晶層,所述磊晶層採用氣相沉積法形成,其中載氣包括氘氣
第1圖為本發明一實施例中磊晶層的形成方法的流程圖。
下面將結合示意圖對本發明的磊晶層的形成方法進行更詳細的描述,其中表示了本發明的較佳實施例,應理解具本領域通常知識者可以對此處描述之本發明進行修改,而仍然實現本發明的有利效果。因此,
下列描述應該被理解為對於本領域技術人員的廣泛認知,而並非作為對本發明的限制。
為了清楚,不描述實際實施例的全部特徵。在下列描述中,不詳細描述眾所周知的功能和結構,因為它們會使本發明由於不必要的細節而混亂。應當認為在任何實際實施例的開發中,必須做出大量實施細節以實現開發者的特定目標,例如按照有關系統或有關商業的限制,由一個實施例改變為另一個實施例。另外,應當認為這種開發工作可能是複雜和耗費時間的,但是對於具本領域通常知識者來說僅僅是常規工作。
在下列段落中參照圖式以舉例方式更具體地描述本發明。根據下面的說明和申請專利範圍,本發明的優點和特徵將更清楚。需說明的是,圖式均採用非常簡化的形式且均使用非精準的比例,僅用以方便、明晰地輔助說明本發明實施例的目的。
請參考第1圖,在本實施例中,提出了一種磊晶層的形成方法,包括步驟:S100:提供矽基板;S200:在所述矽基板表面形成一層磊晶層,所述磊晶層採用氣相沉積法形成,其中載氣包括氘氣。
具體的,所述矽基板的形成方法包括:形成矽鑄塊(ingot);打磨所述矽鑄塊至所需的尺寸,例如晶圓大小的尺寸;接著,對所述矽鑄塊依次進行切薄(slicing)、表面磨削(surface grinding)、拋光(polishing)、邊緣處理(edge profiling)及清洗處理(cleaning)等製
程,從而形成矽基板。在本實施例中,所述矽基板為單晶矽,採用直拉法(CZ)形成。
提供所述矽基板之後,在形成磊晶層之前,還包括步驟:去除所述矽基板表面的自然氧化層,所述自然氧化層可以採用濕式或者乾式蝕刻去除;通常情況下,矽基板在長期暴露在空氣之中會被空氣中的氧氣氧化,形成一層較薄的自然氧化層,去除所述自然氧化層能夠使後續形成的磊晶層與矽基板之間具有良好的接觸,並且可以提高矽基板的品質;接著,對所述矽基板進行清洗。
在步驟S200中,採用氣相沉積法形成磊晶層,其中,氣相沉積法所使用的載氣包括氘氣。
具體的,所述氣相沉積法的溫度範圍為800℃~1100℃,例如是1000℃。
在本實施例中,所述氣相沉積法使用的載氣為氘氣和氫氣的混合氣體,其中,所述氘氣占的比例範圍為1%~100%,具體的比例可以根據不同的製程需求來決定。
除此之外,所述氣相沉積法使用的載氣也可以是單純的氘氣。
使用氘氣作為載氣,在形成磊晶層時,由於氘原子體積小,能夠暫時貯存在磊晶層的間隙中,在後續形成閘氧化層或裝置時,可以與閘氧化層等的懸鍵進行結合,形成穩定的化學鍵,消除多餘的懸鍵,從而可以提高閘氧化層的性能。此外,氘原子不僅僅與閘氧化層的懸鍵進行結
合,還能夠與半導體裝置的中其他層的懸鍵進行結合,而且形成的化學鍵較其他元素(例如氫原子)形成的化學鍵更為穩定。
在本實施例中,所述磊晶層為單晶矽。所述氣相沉積法使用的反應氣體為包含矽元素的氣體,例如是SiH4、Si2H6、SiH2Cl2、SiHCl3、SiCl4或Si(CH3)4等氣體均可。磊晶層的厚度等均由不同製程決定,在此不作限定。
綜上,在本發明實施例提供的磊晶層的形成方法中,在採用氣相沉積法形成磊晶層時,使用包括氘氣的載氣,由於處於氘氣的環境中,能夠使形成的磊晶層內部存有氘原子,在後續閘氧化層或裝置的形成時,氘原子能夠擴散出,並與介面處等懸鍵進行結合,形成較為穩定的結構,從而避免載子的穿透,提高裝置的性能。
上述僅為本發明之較佳實施例,其內容係為了詳細說明本發明,但並非意欲限制本發明。熟習本領域之技藝者可理解,在不悖離後附申請專利範圍所界定之範疇下針對本發明所進行之各種變化或修改係落入本發明之一部分。
S100‧‧‧提供矽基板
S200‧‧‧在所述矽基板表面形成一層磊晶層,所述磊晶層採用氣相沉積法形成,其中載氣包括氘氣
Claims (10)
- 一種磊晶層的形成方法,其特徵在於,包括步驟:提供矽基板;在所述矽基板表面形成一層磊晶層,所述磊晶層採用氣相沉積法形成,其中載氣包括氘氣。
- 如申請專利範圍第1項所述的磊晶層的形成方法,其特徵在於,所述氣相沉積法的溫度範圍為800℃~1100℃。
- 如申請專利範圍第1項所述的磊晶層的形成方法,其特徵在於,所述氣相沉積法使用的載氣為氘氣和氫氣的混合氣體。
- 如申請專利範圍第3項所述的磊晶層的形成方法,其特徵在於,所述氘氣佔的比例範圍為1%~100%。
- 如申請專利範圍第1項所述的磊晶層的形成方法,其特徵在於,所述氣相沉積法使用的載氣為氘氣。
- 如申請專利範圍第1項所述的磊晶層的形成方法,其特徵在於,所述磊晶層為單晶矽。
- 如申請專利範圍第6項所述的磊晶層的形成方法,其特徵在於,所述氣相沉積法使用的反應氣體為包含矽元素的氣體。
- 如申請專利範圍第7項所述的磊晶層的形成方法,其特徵在於,所述氣相沉積法使用的反應氣體為SiH4、Si2H6、SiH2Cl2、SiHCl3、SiCl4或Si(CH3)4。
- 如申請專利範圍第1項所述的磊晶層的形成方法,其特徵在於,提供所述矽基板之後,在形成磊晶層之前,還包括步驟:去除所述矽基板表面的自然氧化層;對所述矽基板進行清洗。
- 如權利要求9所述的磊晶層的形成方法,其特徵在於,採用濕式蝕刻或乾式蝕刻去除所述矽基板表面的自然氧化層。
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