TW201711171A - 半導體裝置及其製造方法 - Google Patents

半導體裝置及其製造方法 Download PDF

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Publication number
TW201711171A
TW201711171A TW105106188A TW105106188A TW201711171A TW 201711171 A TW201711171 A TW 201711171A TW 105106188 A TW105106188 A TW 105106188A TW 105106188 A TW105106188 A TW 105106188A TW 201711171 A TW201711171 A TW 201711171A
Authority
TW
Taiwan
Prior art keywords
wafer
dram
nand
layer
semiconductor
Prior art date
Application number
TW105106188A
Other languages
English (en)
Chinese (zh)
Inventor
松浦永悟
Original Assignee
東芝股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東芝股份有限公司 filed Critical 東芝股份有限公司
Publication of TW201711171A publication Critical patent/TW201711171A/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
TW105106188A 2015-09-11 2016-03-01 半導體裝置及其製造方法 TW201711171A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015179645A JP2017055052A (ja) 2015-09-11 2015-09-11 半導体装置および半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW201711171A true TW201711171A (zh) 2017-03-16

Family

ID=58317370

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105106188A TW201711171A (zh) 2015-09-11 2016-03-01 半導體裝置及其製造方法

Country Status (3)

Country Link
JP (1) JP2017055052A (ja)
CN (1) CN106531729A (ja)
TW (1) TW201711171A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI777603B (zh) * 2021-01-25 2022-09-11 日商鎧俠股份有限公司 半導體裝置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107768313A (zh) * 2017-10-24 2018-03-06 南京矽邦半导体有限公司 一种半导体装置及其制作方法
JP2020035957A (ja) * 2018-08-31 2020-03-05 キオクシア株式会社 半導体装置
JP2020053655A (ja) * 2018-09-28 2020-04-02 キオクシア株式会社 半導体装置及び半導体装置の製造方法
JP7242366B2 (ja) * 2019-03-22 2023-03-20 キオクシア株式会社 半導体装置
CN110731012B (zh) * 2019-04-15 2021-01-29 长江存储科技有限责任公司 具有处理器和异构存储器的一体化半导体器件及其形成方法
US11195820B2 (en) * 2020-03-03 2021-12-07 Sandisk Technologies Llc Semiconductor device including fractured semiconductor dies

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI777603B (zh) * 2021-01-25 2022-09-11 日商鎧俠股份有限公司 半導體裝置
US11935872B2 (en) 2021-01-25 2024-03-19 Kioxia Corporation Semiconductor device and method of manufacturing semiconductor device

Also Published As

Publication number Publication date
JP2017055052A (ja) 2017-03-16
CN106531729A (zh) 2017-03-22

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