TW201707959A - 基材的處理方法、暫時固定用組成物及半導體裝置 - Google Patents

基材的處理方法、暫時固定用組成物及半導體裝置 Download PDF

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Publication number
TW201707959A
TW201707959A TW105122572A TW105122572A TW201707959A TW 201707959 A TW201707959 A TW 201707959A TW 105122572 A TW105122572 A TW 105122572A TW 105122572 A TW105122572 A TW 105122572A TW 201707959 A TW201707959 A TW 201707959A
Authority
TW
Taiwan
Prior art keywords
substrate
temporary fixing
fixing material
layer
material layer
Prior art date
Application number
TW105122572A
Other languages
English (en)
Chinese (zh)
Inventor
Youichirou Maruyama
Takashi Mori
Hikaru Mizuno
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of TW201707959A publication Critical patent/TW201707959A/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Laminated Bodies (AREA)
TW105122572A 2015-08-21 2016-07-18 基材的處理方法、暫時固定用組成物及半導體裝置 TW201707959A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015163628 2015-08-21

Publications (1)

Publication Number Publication Date
TW201707959A true TW201707959A (zh) 2017-03-01

Family

ID=58099963

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105122572A TW201707959A (zh) 2015-08-21 2016-07-18 基材的處理方法、暫時固定用組成物及半導體裝置

Country Status (5)

Country Link
JP (1) JP6683203B2 (ja)
KR (1) KR102560043B1 (ja)
CN (1) CN107851551B (ja)
TW (1) TW201707959A (ja)
WO (1) WO2017033639A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111415949B (zh) 2020-04-27 2022-07-29 武汉华星光电半导体显示技术有限公司 柔性显示面板及其制造方法
WO2021235406A1 (ja) * 2020-05-21 2021-11-25 デンカ株式会社 組成物
WO2023243487A1 (ja) * 2022-06-13 2023-12-21 日東電工株式会社 電子部品仮固定用粘着シート
WO2023243488A1 (ja) * 2022-06-13 2023-12-21 日東電工株式会社 電子部品仮固定用粘接着シート

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3178417B2 (ja) * 1998-06-10 2001-06-18 日本電気株式会社 半導体キャリアおよびその製造方法
DE10137375A1 (de) * 2001-07-31 2003-02-27 Infineon Technologies Ag Verwendung von Polybenzoxazolen (PBO) zum Kleben
CN1703773B (zh) * 2002-06-03 2011-11-16 3M创新有限公司 层压体以及用该层压体制造超薄基片的方法和设备
JP4613709B2 (ja) * 2005-06-24 2011-01-19 セイコーエプソン株式会社 半導体装置の製造方法
US8222116B2 (en) * 2006-03-03 2012-07-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101383540B1 (ko) 2007-01-03 2014-04-09 삼성전자주식회사 복수의 움직임 벡터 프리딕터들을 사용하여 움직임 벡터를추정하는 방법, 장치, 인코더, 디코더 및 복호화 방법
CN102625952A (zh) * 2009-09-16 2012-08-01 住友电木株式会社 隔片形成用膜、半导体晶片接合体的制造方法、半导体晶片接合体和半导体装置
JP2011066167A (ja) * 2009-09-16 2011-03-31 Sumitomo Bakelite Co Ltd スペーサ形成用フィルム、半導体ウエハー接合体の製造方法、半導体ウエハー接合体および半導体装置
JP2013098305A (ja) * 2011-10-31 2013-05-20 Jsr Corp 基材の処理方法、半導体装置および仮固定用組成物
US9029238B2 (en) * 2012-10-11 2015-05-12 International Business Machines Corporation Advanced handler wafer bonding and debonding
WO2014137801A1 (en) * 2013-03-03 2014-09-12 John Moore Temporary adhesive with tunable adhesion force sufficient for processing thin solid materials
JP6188495B2 (ja) * 2013-08-30 2017-08-30 富士フイルム株式会社 積層体及びその応用

Also Published As

Publication number Publication date
KR20180036988A (ko) 2018-04-10
CN107851551B (zh) 2022-04-05
JP6683203B2 (ja) 2020-04-15
WO2017033639A1 (ja) 2017-03-02
CN107851551A (zh) 2018-03-27
KR102560043B1 (ko) 2023-07-25
JPWO2017033639A1 (ja) 2018-06-07

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