TW201701302A - 供交聯或硫化細長元件用的方法及設備 - Google Patents
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Abstract
本發明涉及一種用於交聯或硫化細長元件的方法和裝置,該方法包括擠出步驟(2)和交聯步驟(3),在擠出步驟中,導體元件由可交聯的合成材料的層塗覆,在交聯步驟(3)中,在擠出步驟之後進行交聯反應。首先透過以550攝氏度或更高的溫度、在第一加熱區(3a)加熱已塗覆的導體元件而進行交聯反應。第一加熱區(3a)位於該擠出步驟(2)的下游。在第一加熱區(3a)之後,透過以200-300攝氏度的溫度、在第二加熱區(3b)中加熱已塗覆的導體元件而進一步進行交聯反應。
Description
本發明涉及一種用於交聯或硫化細長元件的方法,該方法包括擠出步驟和交聯步驟,在擠出步驟中,導體元件由可交聯的合成材料的層塗覆,在交聯步驟中,在擠出步驟之後進行交聯反應。本發明還涉及一種用於交聯或硫化細長元件的裝置。
本發明涉及用於製造電力電纜(尤其是高壓和超高壓電纜(MV、HV和EHV電纜))的過程中使用的方法和裝置。這些電纜主要在連續硫化生產線(CV生產線)中進行塑膠絕緣和交聯。上面討論的連續硫化生產線可以是乾燥固化接觸網CV生產線(CCV生產線)或垂直連續硫化生產線(VCV生產線)。
電纜的芯由導體元件(鋁或銅,35至3500平方毫米)和三個絕緣層(內部半導體0.5至2毫米、絕緣體3.5至35毫米和外部半導體0.5至2毫米)。
電纜的固化是在加壓管(CV管)在約10巴的壓力下實現的,該加壓管具有200至300毫米的內徑和100至200米的長度。在氮氣氛中、在CV管的第一部分中發生層的交聯。為了啟動交聯化學反應,絕緣層被加熱到升高的溫度(200至300℃)。該升高的溫度還產生熱膨脹。
上面所討論的事項對於本領域技術人員而言是公知的,並且因此在此沒有詳細描述連續硫化生產線的操作或/和構造。作為涉及連續硫化生產線技術的現有技術文獻的一個示例,可提及EP 2 574 439 A1。
現有技術的問題涉及芯圓度或實際上缺乏芯圓度。換言之,使用現有技術的技術時的結果即電纜的橫截面並不總是完全圓形的而是例如為卵形的或一些其它形式。
缺乏芯圓度可以大致分類為以下類別,即:
-絕緣層接縫附近扁平
-大致卵形
-下垂(在CCV生產線中)
-由於流量分配器而導致的不規則形狀
前三個類別是最重要的類別。在垂直硫化生產線中下垂顯然不是問題。絕緣層的流動分佈足夠好而不會造成任何可測量的圓度誤差。因此,在交聯階段期間形成扁平和卵形兩者。
本發明的目的是消除現有技術的問題。這透過本發明
來獲得。本發明的方法的特徵在於,首先透過以550攝氏度或更高的溫度、在第一加熱區中加熱已塗覆的導體元件而進行交聯反應,第一加熱區位於該擠出步驟的下游,在第一加熱區之後,透過以200-300攝氏度的溫度、在第二加熱區中加熱已塗覆的導體元件而進一步進行交聯反應。本發明的裝置的特徵在於,首先透過以550攝氏度或更高的溫度、在第一加熱區中加熱已塗覆的導體元件而進行交聯反應,第一加熱區位於該擠出步驟的下游,在第一加熱區之後,透過以200-300攝氏度的溫度、在第二加熱區中加熱已塗覆的導體元件而進一步進行交聯反應。
本發明的一個優點在於,它解決了上面討論的現有技術的問題。
1‧‧‧供給部
2‧‧‧擠出頭裝置
3‧‧‧硫化管
3a‧‧‧第一加熱區
3b‧‧‧第二加熱區
4‧‧‧冷卻管
5‧‧‧收取部
6‧‧‧芯
6‧‧‧導體
7‧‧‧半導體絕緣材料
8‧‧‧電纜套管
a‧‧‧碰撞
b‧‧‧拉伸
c‧‧‧變薄
下面將參照附圖來更加詳細地描述本發明,其中圖1示出一種垂直連續硫化生產線的原理佈局圖,圖2顯示了相較於現有技術的固化,本發明的固化對扁平(接縫深度)的影響,圖3顯示了相較於現有技術的固化,本發明的固化對卵形的影響,圖4示出了由本發明和現有技術獲得的交聯滲透深度,圖5示出了本發明和現有技術的加熱區輪廓,以及圖6示出了在電纜的橫截面中看到的交聯過程中的膨
脹情況。
透過使用垂直連續硫化生產線作為一個示例來描述本發明。圖1示出了硫化生產線的原理佈局圖,特別是垂直連續硫化生產線(VCV生產線)的原理佈局圖。所示出的生產線包括供給部1、擠出頭裝置2、硫化管3、冷卻管4和收取部5。導體透過生產線從供給部1引導到收取部5。圖1僅示出生產線的最基本的元件。在看圖1時,本領域技術人員立即意識到該生產線還可以包括另外的元件,即,用於導體元件的預加熱器、後加熱器和計量絞盤(capstans)或計量履帶(caterpillars)等。由於之前所述的操作和圖1中所示的生產線的結構對於本領域的技術人員而言是公知,因此,在此沒有詳細描述所述事項。這些事項在現有技術中已有廣泛描述,例如在之前涉及的EP 2 574 439中有描述。
在VCV生產線中,包圍電纜的結構是徑向對稱的,因此,在各層本身中(尤其是在絕緣層中)找到了導致圓度誤差的不對稱現象。不對稱效應是下述的組合
-不對稱溫度
-接縫的機械性弱點
-分子取向
-機械應力
-不均勻性
這些效應沒有一個足夠強以在電纜僅僅被冷卻而未經交聯的情況下引起圓度誤差。圓度誤差源自在交聯期間芯熱膨脹時引發的內力和位移(徑向和切向)。熱膨脹增大導致圓度誤差增大。接縫區的機械性弱點(相比於塑膠層的其餘部分,分子纏結少)引起扁平區(即,厚度減小)。卵形和其它的不對稱效應之間的關係不太明顯。
本發明的想法是使用短固化第一加熱區3a以異常高的溫度使得表面層交聯達到芯的某一滲透深度。可以使用術語“脈衝固化”很好地描述本發明。在一個全尺寸的CV生產線中,該特定的第一加熱區3a將位於十字頭或擠出裝置2的右側下游(例如十字頭或擠出裝置2的恰好後面),該第一加熱區具有0.5-4米的長度,設定溫度為550攝氏度或更高。在該第一加熱區3a之後,透過以200-300攝氏度的較低溫度在第二加熱區3b中加熱該芯來繼續進行固化過程。
根據現有技術工藝裝置的狀態,電纜表面溫度不應該超過300攝氏度。這一限制不適用於脈衝固化,因為表面的熱降解是暴露時間和溫度兩者的函數;對於EEA(乙烯丙烯酸乙酯)和EBA(乙烯丙烯酸丁酯)基的半導體材料,高得多的溫度是可接受的。
由脈衝固化早期誘導的交聯使得接縫區的表面加強,在該處,熱膨脹的影響最強(圖2)。它還固定了原始的圓形(圖3)。在熱膨脹之前、在恰好交聯階段開始時施加脈衝固化是至關重要的。
滲透深度定義為從外表面在交聯程度超過80%情況下的距離。圖4針對標準的現有技術方法d(n)的滲透深度和脈衝固化d(s)的滲透深度將所計算的沿CV管的滲透深度進行比較。
對圖2和圖3所示的相同的電纜進行計算。(鋁導體Dc=50.0毫米,外徑Do=98.0毫米)。顯然脈衝固化導致交聯材料的大部分層早期對絕緣外側賦予強度,以承受與熱膨脹相關的應力。作為一個示例,在開始形成顯著膨脹的7毫米的長度處,滲透深度幾乎是雙倍。
總層厚度(所有三個層)的計算的熱膨脹量對於脈衝固化為2.2%,對於正常固化為2.6%。在圖5示出了相應的加熱輪廓,其示出了脈衝加熱的加熱區輪廓Tz(s)和正常固化的加熱區輪廓Tz(n)。
圖5還示出如何在第一加熱區3a之後在第二加熱區3b中以較低的溫度進行加熱。在這個示例中,使用用於將擠出頭連接到CV管的短的無源中性“電纜套管”(splice box)8。電纜套管的長度可以例如是2.5米。
在垂直連續硫化生產線中,第一加熱區3a可以位於電纜套管8的上游或下游。圖1示出了第一加熱區的上游位置,即第一加熱區3a在從芯6的移動方向上看時位於電纜套管8之前。在下游位置中,第一加熱區3a在從芯6的移動方向上看時位於電纜套管之後。在該位置處,在熱膨脹變得顯著之前交聯所擠出的表面層。在接觸網硫化生產線中,情況因下垂而不同。由於所述原因,在接觸網
硫化生產線中,第一加熱區3a必須放成盡可能靠近擠出頭2,即,在電纜套管8的上游。
本發明(即,脈衝固化)提高圓度且降低扁平性的原因隨後可透過觀察圖6所示的電纜的橫截面而描述如下。在圖6中,導體用附圖標記6示出,半導體絕緣材料用附圖標記7示出。
扁平的起源是外部的半導體絕緣材料的切向位移。接縫(焊接線)相比於絕緣/半導體的其餘部分熔化強度弱。正常地,當內部部件正在膨脹(參照圖6,碰撞a)時,周長增大。因為接縫區較弱,它沿著切向(圖6,拉伸b)延伸並且變得更薄(圖5,變薄c)。所描述的機理首先發生在表面附近,然後滲透並且朝向導體減弱。
在脈衝固化的情況下,在顯著熱膨脹之前的圓周快速交聯加強了接縫區而且顯著降低了扁平度。
已經透過使用附圖中所示的實施例來描述本發明。但是,所示出的實施例決不用於限制本發明,而是本發明可以在申請專利範圍的範圍內完全自由地改變。所示的實施例涉及一種垂直連續硫化生產線(VCV生產線)。然而,本發明並不局限於VCV生產線,而是本發明還能夠很好地與連續接觸網CV生產線(CCV生產線)等聯合使用。
1‧‧‧供給部
2‧‧‧擠出頭裝置
3‧‧‧硫化管
3a‧‧‧第一加熱區
3b‧‧‧第二加熱區
4‧‧‧冷卻管
5‧‧‧收取部
6‧‧‧芯
8‧‧‧電纜套管
Claims (12)
- 一種用於交聯或硫化細長元件的方法,該方法包括擠出步驟(2)和交聯步驟(3),在擠出步驟中,導體元件由可交聯的合成材料的層塗覆,在交聯步驟中,在擠出步驟之後進行交聯反應,其特徵在於,首先透過以550攝氏度或更高的溫度、在第一加熱區(3a)中加熱已塗覆的導體元件而進行交聯反應,第一加熱區(3a)位於該擠出步驟(2)的下游,且在第一加熱區(3a)之後,透過以200-300攝氏度的溫度、在第二加熱區(3b)中加熱已塗覆的導體元件而進一步進行交聯反應。
- 如請求項1的方法,其中,在將擠出步驟(2)連接到第二加熱區(3b)的無源電纜套管(passive splice box)(8)的上游進行在第一加熱區(3a)中的加熱。
- 如請求項1的方法,其中,在將擠出步驟(2)連接到第二加熱區(3b)的無源電纜套管(8)的下游進行在第一加熱區(3a)中的加熱。
- 如請求項1或2所述的方法,其中,第一加熱區(3a)的長度為0.5-4米。
- 如請求項1-3中任一項所述的方法,其中,在垂直連續硫化生產線(VCV生產線)中進行該方法。
- 如請求項1或2所述的方法,其中,在接觸網連續硫化生產線(CCV生產線)中進行該方法。
- 一種用於交聯或硫化細長元件的裝置,在該裝置 中,裝置導體元件透過使用擠出頭(2)而由可交聯的合成材料的層塗覆,且在擠出頭之後、在硫化管(3)中進行交聯反應,其特徵在於,首先透過以550攝氏度或更高的溫度、在第一加熱區(3a)中加熱已塗覆的導體元件進行交聯反應,第一加熱區(3a)位於擠出頭(2)的下游,且在第一加熱區(3a)之後,透過以200-300攝氏度的溫度、在第二加熱區(3b)中加熱已塗覆的導體元件而進一步進行交聯反應。
- 如請求項7所述的裝置,其中,第一加熱區(3a)位於擠出頭(2)與無源電纜套管(2)之間,該無源電纜套管將擠出頭(2)連接到硫化管(3)。
- 如請求項7所述的裝置,其中,第一加熱區(3a)位於無源電纜套管(8)與硫化管(3)的第二硫化區(3b)之間,該無源電纜套管將擠出頭(2)連接到硫化管(3)。
- 如請求項7-9中任一項所述的裝置,其中,第一加熱區(3a)的長度為0.5-4米。
- 如請求項7-9中任一項所述的裝置,其中,該裝置是垂直連續硫化生產線(VCV生產線)的一部分。
- 如請求項7或8所述的裝置,其中,該裝置是接觸網連續硫化生產線(CCV生產線)的一部分。
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