TW201618263A - 連接體、及連接體之製造方法 - Google Patents

連接體、及連接體之製造方法 Download PDF

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Publication number
TW201618263A
TW201618263A TW104123628A TW104123628A TW201618263A TW 201618263 A TW201618263 A TW 201618263A TW 104123628 A TW104123628 A TW 104123628A TW 104123628 A TW104123628 A TW 104123628A TW 201618263 A TW201618263 A TW 201618263A
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Taiwan
Prior art keywords
output
bump
row
terminal
bumps
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TW104123628A
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English (en)
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TWI663697B (zh
Inventor
Reiji Tsukao
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Dexerials Corp
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Publication of TW201618263A publication Critical patent/TW201618263A/zh
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Publication of TWI663697B publication Critical patent/TWI663697B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
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    • G02F2202/00—Materials and properties
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Abstract

本發明係可容易地判定在凸塊與電極之間導電性粒子是否被適度地壓扁。 一種連接體1，具備：電路基板12，排列有複數個端子21之端子排22在與端子21之排列方向正交之寬度方向並列複數排；以及電子零件18，對應複數排端子排22，排列有複數個凸塊25之凸塊排26在與凸塊25之排列方向正交之寬度方向並列複數排；該連接體1透過排列有導電性粒子4之異向性導電接著劑1於電路基板12上連接有電子零件18；其中，排列於電路基板12及電子零件18之各外側之相對向的端子21與凸塊25的距離，較排列於各內側之相對向的端子21與凸塊25的距離大。

Description

連接體、及連接體之製造方法
本發明係關於一種由電子零件與電路基板連接而成之連接體，尤其係關於一種將電子零件經由含有導電性粒子之接著劑而連接於電路基板之連接體、及連接體之製造方法。
本申請案是以2014年7月22日於日本申請之日本專利申請案特願2014-14928、及2014年11月28日於日本申請之日本專利申請案特願2014-242270為基礎並主張優先權，參照該等申請，藉此援用於本發明中。
自先前，作為電視或PC監視器、行動電話或智慧型手機、攜帶型遊戲機、平板終端或可配戴終端、或車載用監視器等各種顯示手段，使用有液晶顯示裝置或有機EL面板。近年來，於此種顯示裝置中，自微間距化、輕量薄型化等之觀點而言，採用如下之施工方法：使用異向性導電膜(ACF：Anisotropic Conductive Film)，將驅動用IC直接構裝於顯示面板之玻璃基板上、或將形成有驅動電路等之可撓性基板直接構裝於玻璃基板上。
於IC或可撓性基板經構裝之玻璃基板上，形成有複數個由ITO(氧化銦錫)等構成之透明電極，且IC或可撓性基板等電子零件被連接於該透明電極上。連接於玻璃基板之電子零件於構裝面上，與透明電極對應而形成有複數個電極端子，經由異向性導電膜而熱壓接於玻璃基板上，藉此將電極端子與透明電極連接。
異向性導電膜係使導電性粒子混入至黏合劑樹脂中並形成膜狀者，於2個導體間藉由加熱壓接而由導電性粒子取得導體間之電導通，且由黏合劑樹脂保持導體間之機械連接。作為構成異向性導電膜之接著劑，通常，使用可靠性高之熱硬化性之黏合劑樹脂，但亦可為光硬化性之黏合劑樹脂或光熱併用型之黏合劑樹脂。
在經由此種異向性導電膜將電子零件連接於透明電極之情形時，首先，將異向性導電膜藉由暫壓接手段而暫貼於玻璃基板之透明電極上。繼而，經由異向性導電膜將電子零件搭載於玻璃基板上而形成暫連接體之後，藉由熱壓接頭等熱壓接手段將電子零件與異向性導電膜一同朝透明電極側加熱擠壓。藉由該熱壓接頭之加熱，引起異向性導電膜熱硬化反應，藉此將電子零件接著於透明電極上。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本專利第4789738號公報
[專利文獻2]日本特開2004-214374號公報
[專利文獻3]日本特開2005-203758號公報
用於此種OCG連接之IC晶片50，例如如圖10(A)所示，係於對玻璃基板56之構裝面，形成沿著一側緣50a而將輸入凸塊51以一排排列之輸入凸塊區域52，且設有沿著與一側緣50a對向之另一側緣50b排列 有兩排交錯格子狀之輸出凸塊53之輸出凸塊區域54。凸塊排列雖會依IC晶片種類而有各式各樣，但一般而言，具有凸塊之IC晶片，輸出凸塊53數目較輸入凸塊51之數目多，輸出凸塊區域54面積較輸入凸塊區域52面積大，且輸入凸塊51之形狀形成為較輸出凸塊53形狀大。
又，具有凸塊之IC晶片50，藉由於對向之一對側緣之一側形成有輸入凸塊51、於另一側形成有輸出凸塊53而分離，於中央部有未形成有凸塊之區域。
又，IC晶片50中，輸入凸塊51與輸出凸塊53之各凸塊排列及大小不同，而在構裝面配置成非對稱。又，在例如智慧型手機等之各種液晶顯示面板所使用之驅動用IC等之IC晶片中，係有隨著像素越來越高，對應各像素之輸出訊號亦增加，而輸出凸塊亦增加的傾向，相較於形成於一側緣之輸入凸塊51以一排排列，亦提出了一種形成於另一側緣之輸出凸塊53排列成兩排或三排以上的設計。
再者，隨著近年之智慧型手機或平板終端、可配戴終端等攜帶型機器之小型化、薄型化不停進展，IC晶片50亦被設計成寬度寬且薄型，輸入輸出凸塊間之區域變大，使得凸塊間區域相對於面方向之按壓容易變形。
因此，如圖10(B)所示，IC晶片50，在連接於玻璃基板56時被熱壓接頭58加熱擠壓後，在未形成有輸入凸塊51或輸出凸塊53之中央之凸塊間區域中會不停排除異向性導電膜55之黏合劑樹脂，而產生彎曲(圖11)。其結果，IC晶片50中，形成於基板外側緣之輸出凸塊53b相較於形成於基板內側之輸出凸塊53a成為從玻璃基板56之透明電極57浮起之狀 態，對導電性粒子60之擠壓力變弱，而有接觸不良之虞。
因此，從提升生產性之觀點來看，亦有藉由連接後之檢查步驟確認已藉由IC晶片50之輸入輸出凸塊51,53與玻璃基板56之透明電極57壓扁導電性粒子60而據以確保導通性。此處，作為連接後之檢查，有藉由從玻璃基板56之背面觀察出現在透明電極57之導電性粒子60之壓痕之外觀檢查來進行。
然而，壓痕之好壞係透過人類目視之感官評估，除了有作為判斷基準之模糊性以外，由於係藉由與不存在導電性粒子60之周邊部位比較來進行，因此若凸塊與透明電極57之間導電性粒子60重疊，或於透明電極57之面內方向導電性粒子60連續地接觸或過度接近，則會影響壓痕與周邊部位之識別，即影響對比度或色調且使辨識性降低，從而亦有無法進行迅速且準確之外觀檢查之虞。
因此，本發明之目的在於提供一種連接體、及連接體之製造方法，其能在形成於IC晶片內側之凸塊與電路基板之電極中之壓入的對比中，容易地判定形成於IC晶片外緣側之凸塊與構裝有IC晶片之電路基板之電極之間導電性粒子是否被適度地壓潰而確保良好之導通性。
為解決上述課題，本發明之連接體，其具備：電路基板，排列有複數個端子之端子排在與上述端子之排列方向正交之寬度方向並列複數排；以及電子零件，對應上述複數排端子排，排列有複數個凸塊之凸塊排在與上述凸塊之排列方向正交之寬度方向並列複數排；其透過排列有導電性粒子之異向性導電接著劑於上述電路基板上連接有上述電子零件；其 特徵在於：排列於上述電路基板及上述電子零件之各外側之相對向的端子與凸塊的距離，較排列於上述電路基板及上述電子零件之各內側之相對向的端子與凸塊的距離大。
又，本發明之連接體之製造方法，該連接體具備：電路基板，排列有複數個端子之端子排在寬度方向並列複數排；以及電子零件，對應上述複數排端子排，排列有複數個凸塊之凸塊排在寬度方向並列複數排；其經由排列有導電性粒子之異向性導電接著劑而於上述電路基板上搭載上述電子零件；按壓上述電子零件且使上述異向性導電接著劑硬化而成，其特徵在於：排列於上述電路基板及上述電子零件之各外側之相對向的端子與凸塊的距離，較排列於上述電路基板及上述電子零件之各內側之相對向的端子與凸塊的距離大。
根據本發明，由於經由排列有導電性粒子之異向性導電接著劑而於電路基板上連接有電子零件，因此即使在排列於電路基板及電子零件之各外側之相對向的端子與凸塊的距離，較排列於電路基板及電子零件之各內側之相對向的端子與凸塊的距離大，亦可相對排列於各內側之端子與凸塊之距離抑制在既定範圍內。是以，根據本發明，即使在排列於外側之端子與凸塊之間，亦能與排列於內側之端子與凸塊之間同樣地確保良好之導通性。
1‧‧‧異向性導電膜
2‧‧‧剝離膜
3‧‧‧黏合劑樹脂層
4‧‧‧導電性粒子
6‧‧‧捲繞盤
10‧‧‧液晶顯示面板
11、12‧‧‧透明基板
12a‧‧‧緣部
13‧‧‧封條
14‧‧‧液晶
15‧‧‧面板顯示部
16、17‧‧‧透明電極
18‧‧‧液晶驅動用IC
18a‧‧‧構裝面
19‧‧‧輸入端子
20‧‧‧輸入端子排
21‧‧‧輸出端子
22‧‧‧輸出端子排
23‧‧‧輸入凸塊
25‧‧‧輸出凸塊
24‧‧‧輸入凸塊排
26‧‧‧輸出凸塊排
27‧‧‧構裝部
31‧‧‧基板側對準標記
32‧‧‧IC側對準標記
33‧‧‧熱壓接頭
35‧‧‧端子間之間隙
圖1係作為連接體之一例而表示之液晶顯示面板之剖面圖。
圖2係表示自電路基板之背面觀察之輸入輸出端子上出現的壓痕之狀 態之仰視圖。
圖3係表示液晶驅動用IC與電路基板之連接步驟之剖面圖。
圖4係表示液晶驅動用IC之電極端子(凸塊)及端子間之間隙之俯視圖。
圖5係表示異向性導電膜之剖面圖。
圖6係表示導電性粒子以晶格狀規則排列之異向性導電膜之俯視圖。
圖7係表示實施例之評估用IC之凸塊與端子之距離之測定位置之俯視圖。
圖8係表示實施例之評估用IC之凸塊與端子之距離之測定位置之剖面圖。
圖9(A)~(C)係僅拔出形成有凹凸部之凸塊而表示的剖面圖。
圖10(A)係液晶驅動用IC之俯視圖，圖10(B)係表示連接步驟之剖面圖。
圖11係表示於液晶驅動用IC產生翹曲之狀態之剖面圖。
以下，一面參照圖式，一面對應用本發明之連接體、及連接體之製造方法詳細地進行說明。再者，本發明並非僅限定於以下之實施形態，當然於不脫離本發明之要旨之範圍內可進行種種變更。又，圖式為示意性圖式，有時各尺寸之比率等與實際情形不同。具體之尺寸等應參考以下之說明而判斷。又，當然圖式彼此間亦包含相互之尺寸之關係或比率不同之部分。
[液晶顯示面板]
以下，作為應用本發明之連接體，以將液晶驅動用之IC晶片作為電子 零件而構裝於玻璃基板之液晶顯示面板為例進行說明。如圖1所示，該液晶顯示面板10中，將由玻璃基板等構成之二片透明基板11、12對向配置，且將該等透明基板11、12藉由框狀之封條13而相互貼合。繼而，液晶顯示面板10藉由將液晶14封入至由透明基板11、12圍繞之空間內而形成面板顯示部15。
透明基板11、12於相互對向之兩內側表面，以相互交叉之方式形成有由ITO(氧化銦錫)等構成之條紋狀之一對透明電極16、17。而且，兩透明電極16、17藉由該等兩透明電極16、17之該交叉部位而構成作為液晶顯示之最小單位之像素。
於兩透明基板11、12中，一透明基板12形成得較另一透明基板11之平面尺寸大，於該較大地形成之透明基板12之緣部12a，設置有供作為電子零件之液晶驅動用IC 18構裝之構裝部27。此外，如圖2、圖3所示，於構裝部27，形成有由透明電極17之複數個輸入端子19排列而成之輸入端子排20及由複數個輸出端子21排列而成之輸出端子排22、以及與設置於液晶驅動用IC 18上之IC側對準標記32重疊之基板側對準標記31。
構裝部27例如具有形成有一個輸入端子排20之第1端子區域27a、以及形成有在與輸出端子21之排列方向正交之寬度方向並列之兩個輸出端子排22a,22b之第2端子區域27b。輸出端子21及輸出端子排22具有於內側亦即輸入端子排20側排列有第1輸出端子21a之第1輸出端子排22a、以及於外側亦即構裝部27之外緣側排列有第2輸出端子21b之第2輸出端子排22b。
液晶驅動用IC 18可藉由對像素選擇性地施加液晶驅動電壓 而使液晶之配向局部地變化來進行既定之液晶顯示。又，如圖3、圖4所示，液晶驅動用IC 18於面向透明基板12之構裝面18a，形成有由與透明電極17之輸入端子19導通連接之複數個輸入凸塊23排列而成之輸入凸塊排24、及由與透明電極17之輸出端子21導通連接之複數個輸出凸塊25排列而成之輸出凸塊排26。輸入凸塊23及輸出凸塊25可適當地使用例如銅凸塊或金凸塊、或已對銅凸塊實施鍍金者等。
液晶驅動用IC 18例如具有輸入凸塊23沿著構裝面18a之一側緣以一排排列之第1凸塊區域18b、以及形成有在與輸出凸塊25之排列方向正交之寬度方向並列之兩個輸出凸塊排26a,26b之第2凸塊區域18c。輸出凸塊25及輸出凸塊排26具有於內側亦即輸入凸塊排24側排列有第1輸出凸塊25a之第1輸出凸塊排26a、以及於外側亦即構裝面18a之外緣側排列有第2輸出凸塊25b之第2輸出凸塊排26b。
第1、第2輸出凸塊25a,25b沿與一側緣對向之另一側緣以複數排而排列成交錯格子狀。輸入輸出凸塊23、25與設置於透明基板12之構裝部27之輸入輸出端子19、21係以分別相同數量且相同間距而形成，且其等之連接係藉由使透明基板12與液晶驅動用IC 18位置對準並連接而進行。
此外，第1、第2凸塊區域18b,18c中之輸入輸出凸塊排24、26之排列除圖4所示之情形之外，亦可為於一側緣以一排或複數排而排列，且於另一側緣以一排或複數排而排列之任意之構成。又，輸入輸出凸塊排24、26中，以一排排列之輸入輸出凸塊23,25一部分可成為複數排，且複數排輸入輸出凸塊23,25之一部分亦可成為一排。進而，輸入輸出凸塊排 23,25以使複數排之各輸入輸出凸塊23,25之排列平行且鄰接之凸塊彼此並排之直線排列而形成，或亦可以使複數排之各輸入輸出凸塊23,25之排列平行且鄰接之凸塊彼此均勻地錯開之交錯格子排列而形成。
又，液晶驅動用IC 18亦可使輸入輸出凸塊23,25沿IC基板之長邊而排列，並且沿IC基板之短邊形成側凸塊。再者，輸入輸出凸塊23,25可以相同尺寸來形成，亦可以不同尺寸來形成。又，輸入輸出凸塊排24,26中，可由以相同尺寸形成之輸入輸出凸塊23,25對稱或非對稱地排列，亦可由以不同尺寸形成之輸入輸出凸塊23,25非對稱地排列。
此外，伴隨近年來之液晶顯示裝置等其他電子機器之小型化、高功能化，對於液晶驅動用IC 18等電子零件亦要求小型化、低背化，且輸入輸出凸塊23,25之高度亦變低(例如6~15μm)。
又，液晶驅動用IC 18中，於構裝面18a，藉由與基板側對準標記31重疊而形成有進行對透明基板12之對準之IC側對準標記32。此外，由於正在發展透明基板12之透明電極17之配線間距或液晶驅動用IC 18之輸入輸出凸塊23,25之微間距化，故而亦要求對液晶驅動用IC 18與透明基板12進行高精度之對準調整。
基板側對準標記31及IC側對準標記32可藉由組合而使用取得透明基板12與液晶驅動用IC 18之對準之各種標記。
在形成於構裝部27之透明電極17之輸入輸出端子19,21上，使用異向性導電膜1作為電路連接用接著劑而連接液晶驅動用IC 18。異向性導電膜1係含有導電性粒子4，且使液晶驅動用IC 18之輸入輸出凸塊23,25與透明基板12之形成於構裝部27之透明電極17之輸入輸出端子 19,21經由導電性粒子4而電性連接者。該異向性導電膜1藉由以熱壓接頭33熱壓接而使黏合劑樹脂流動化，使導電性粒子4於輸入輸出端子19,21與液晶驅動用IC 18之輸入輸出凸塊23,25之間被壓扁，於該狀態下黏合劑樹脂硬化。藉此，異向性導電膜1將透明基板12與液晶驅動用IC 18電性且機械連接。
又，於兩透明電極16、17上，形成有實施既定之摩擦處理後之配向膜28，藉由該配向膜28而限制液晶分子之初始配向。進而，於兩透明基板11、12之外側，配設有一對偏光板29a,29b，藉由該等兩偏光板29a,29b而限制來自背光源等光源(未圖示)之透射光之振動方向。
[異向性導電膜]
其次，對異向性導電膜1進行說明。如圖5所示，異向性導電膜(ACF：Anisotropic Conductive Film)1通常係於成為基材之剝離膜2上形成有含有導電性粒子4之黏合劑樹脂層(接著劑層)3者。異向性導電膜1係熱硬化型或紫外線等光硬化型之接著劑，其貼附於液晶顯示面板10之透明基板12之形成有輸入輸出端子19,21的構裝部27並且搭載液晶驅動用IC 18，藉由以熱壓接頭33進行熱加壓而流動化，使導電性粒子4於相對向之透明電極17之輸入輸出端子19,21與液晶驅動用IC 18之輸入輸出凸塊23,25之間被壓扁，且於導電性粒子被壓扁之狀態下藉由加熱或紫外線照射而硬化。藉此，異向性導電膜1可將透明基板12與液晶驅動用IC 18連接且使其等導通。
又，異向性導電膜1中，導電性粒子4以既定之圖案規則地排列於含有膜形成樹脂、熱硬化性樹脂、潛伏性硬化劑、及矽烷偶合劑等 通常之黏合劑樹脂層3中。
支持黏合劑樹脂層3之剝離膜2係將矽酮等剝離劑塗佈於例如PET(Poly Ethylene Terephthalate，聚對苯二甲酸乙二酯)、OPP(Oriented Polypropylene，延伸聚丙烯)、PMP(Poly-4-methylpentene-1，聚4-甲基戊烯-1)、PTFE(Polytetrafluoroethylene，聚四氟乙烯)等而成，防止異向性導電膜1之乾燥，並且維持異向性導電膜1之形狀。
作為黏合劑樹脂層3中含有之膜形成樹脂，較佳為平均分子量為10000~80000左右之樹脂。作為膜形成樹脂，可列舉環氧樹脂、改質環氧樹脂、胺酯樹脂(urethane resin)、苯氧基樹脂等各種樹脂。其中，自膜形成狀態、連接可靠性等之觀點而言，尤佳為苯氧基樹脂。
作為熱硬化性樹脂，並無特別限定，可列舉例如市售之環氧樹脂、丙烯酸樹脂等。
作為環氧樹脂，並無特別限定，可列舉例如萘型環氧樹脂、聯苯型環氧樹脂、酚系酚醛清漆型環氧樹脂、雙酚型環氧樹脂、茋型環氧樹脂、三苯酚甲烷型環氧樹脂、苯酚芳烷基型環氧樹脂、萘酚型環氧樹脂、二環戊二烯型環氧樹脂、及三苯甲烷型環氧樹脂等。該等可單獨使用，亦可為2種以上之組合。
作為丙烯酸樹脂，並無特別限制，可根據目的而適當選擇丙烯酸化合物、液狀丙烯酸酯等。可列舉例如丙烯酸甲酯、丙烯酸乙酯、丙烯酸異丙酯、丙烯酸異丁酯、丙烯酸環氧酯、二丙烯酸乙二醇酯、二丙烯酸二乙二醇酯、三羥甲基丙烷三丙烯酸酯、二羥甲基三環癸烷二丙烯酸酯、四丙烯酸四亞甲基乙二醇酯、2-羥基-1,3-二丙烯醯氧基丙烷、2,2-雙[4 -(丙烯醯氧基甲氧基)苯基]丙烷、2,2-雙[4-(丙烯醯氧基乙氧基)苯基]丙烷、二環戊烯基丙烯酸酯、丙烯酸三環癸酯、三(丙烯醯氧基乙基)異氰尿酸酯、丙烯酸胺基甲酸酯、環氧丙烯酸酯等。此外，亦可使用將丙烯酸酯換為甲基丙烯酸酯者。該等中，可單獨使用1種，亦可將2種以上併用。
作為潛伏性硬化劑，並無特別限定，可列舉例如加熱硬化型、UV硬化型等各種硬化劑。潛伏性硬化劑通常不會反應，藉由根據熱、光、加壓等用途所選擇之各種觸發而活性化，且開始反應。熱活性型潛伏性硬化劑之活性化方法中，存在如下之方法：藉由因加熱引起之解離反應等而生成活性種(陽離子或陰離子、自由基)；於室溫附近穩定地分散於環氧樹脂中，且於高溫下與環氧樹脂相溶-熔解，開始硬化反應；使分子篩(molecular sieve)封入類型之硬化劑於高溫下溶出而開始硬化反應；及利用微膠囊之溶出-硬化等。作為熱活性型潛伏性硬化劑，有咪唑系、醯肼系、三氟化硼-胺錯合物、鋶鹽、胺醯亞胺、聚胺鹽、雙氰胺等、或該等之改質物，該等既可單獨，亦可為2種以上之混合體。其中，較佳為微膠囊型咪唑系潛伏性硬化劑。
作為矽烷偶合劑，並無特別限定，可列舉例如環氧系、胺系、巰基-硫基系、醯脲系等。藉由添加矽烷偶合劑而使有機材料與無機材料之界面之接著性提高。
[導電性粒子]
作為導電性粒子4，可列舉於異向性導電膜1中使用之公知之任意之導電性粒子。作為導電性粒子4，可列舉例如鎳、鐵、銅、鋁、錫、鉛、鉻、鈷、銀、金等各種金屬或於金屬合金之粒子、金屬氧化物、碳、石墨、玻 璃、陶瓷、塑膠等粒子之表面塗佈有金屬者、或於該等粒子之表面進而塗佈有絕緣薄膜者等。於為樹脂粒子之表面塗佈有金屬者之情形時，作為樹脂粒子，可列舉例如環氧樹脂、酚系樹脂、丙烯酸樹脂、丙烯腈-苯乙烯(AS)樹脂、苯胍樹脂、二乙烯苯系樹脂、苯乙烯系樹脂等之粒子。導電性粒子4之大小較佳為1~10μm，但本發明並不限定於此。
[導電性粒子之規則排列]
異向性導電膜1中，導電性粒子4於俯視時以既定之排列圖案規則地排列，例如圖6所示，以晶格狀排列。如後述般，藉由使用導電性粒子4於俯視時以既定之排列圖案規則地排列之異向性導電膜1，排列於透明基板12之構裝部27及液晶驅動用IC 18之構裝面18a之各外側之相對向之第2輸出端子21b與第2輸出凸塊25b之距離，相較於排列於內側之相對向之第1輸出端子21a與第1輸出凸塊25a之距離會成為在130%以內，與使用使導電性粒子4隨機地分散之異向性導電膜的情形相比，排列於外側之第2輸出端子21b與第2輸出凸塊25b之距離較狹窄，具有良好之導通性。
又，異向性導電膜1，與使導電性粒子4隨機地分散之情形相比，藉由俯視時規則地排列而使液晶驅動用IC 18之鄰接之輸入輸出凸塊23,25間之間隙35微間距化，且使端子間面積狹小化，並且即便高密度地填充導電性粒子4，亦可於液晶驅動用IC 18之連接步驟中，防止因導電性粒子4之凝集體而導致輸入輸出凸塊23,25間之間隙35之凸塊間短路。
又，異向性導電膜1中，藉由使導電性粒子4規則地排列，即便於黏合劑樹脂層3中高密度地填充有導電性粒子4之情形時，亦可防止由導電性粒子4之凝集而產生疏密。由此，根據異向性導電膜1，於微間 距化之輸入輸出端子19,21或輸入輸出凸塊23,25中亦可捕捉導電性粒子4。導電性粒子4之均勻排列圖案可任意設定。
此種異向性導電膜1可藉由例如以下之方法等而製造：於可延伸之片材上塗佈黏著劑，且將導電性粒子4單層排列於其上之後，使該片材以所欲之延伸倍率延伸；將導電性粒子4於基板上以既定之排列圖案整齊排列之後，將導電性粒子4轉印至由剝離膜2支持之黏合劑樹脂層3；或向由剝離膜2支持之黏合劑樹脂層3上，經由設置有與排列圖案對應之開口部之排列板而供給導電性粒子4。
此外，異向性導電膜1之形狀並無特別限定，例如圖5所示，可設為可捲繞於捲繞盤6之長條捲帶形狀，且僅切斷既定之長度而使用。
又，於上述實施形態中，作為異向性導電膜1，以將於黏合劑樹脂層3中規則排列有導電性粒子4之熱硬化性樹脂組成物成形為膜狀之接著膜為例予以說明，但本發明之接著劑並不限定於此，例如可形成為將僅由黏合劑樹脂3所構成之絕緣性接著劑層、與由規則排列有導電性粒子4之黏合劑樹脂3所構成之導電性粒子含有層積層而成之構成。又，對異向性導電膜1而言，只要導電性粒子4於俯視時規則排列，則除如圖5所示單層排列之外，亦可為將導電性粒子4遍及複數個黏合劑樹脂層3而排列並且於俯視時規則排列者。又，異向性導電膜1亦可於多層構成之至少一層內，以既定距離單一地分散。
[導電性粒子含有層之高黏度]
又，異向性導電膜1，在積層有僅由黏合劑樹脂層3構成之絕緣性接著劑層與規則排列有導電性粒子4之黏合劑樹脂層3構成之導電性粒子含有 層的構成中，導電性粒子含有層黏度較絕緣性接著劑層高。
藉由於黏度高之黏合劑樹脂層3規則排列導電性粒子4，即使在藉由熱壓接頭33加熱按壓時，亦可抑制導電性粒子含有層中之黏合劑樹脂之流動，藉此抑制導電性粒子4之凝集或疏密產生。是以，液晶驅動用IC 18及透明基板12不僅內側之端子排及凸塊排，於外側之端子排及凸塊排亦為良好之端子與凸塊的距離。
[連接步驟]
其次，對將液晶驅動用IC 18連接於透明基板12之連接步驟進行說明。首先，將異向性導電膜1暫貼於透明基板12之形成有輸入輸出端子19,21之構裝部27上。其次，將該透明基板12載置於連接裝置之載置台上，將液晶驅動用IC 18經由異向性導電膜1配置於透明基板12之構裝部27上。
其次，藉由被加熱至使黏合劑樹脂層3硬化之既定之溫度之熱壓接頭33，以既定之壓力、時間而自液晶驅動用IC 18上進行熱加壓。藉此，異向性導電膜1之黏合劑樹脂層3顯示流動性，自液晶驅動用IC 18之構裝面18a與透明基板12之構裝部27之間流出，並且黏合劑樹脂層3中之導電性粒子4夾持於液晶驅動用IC 18之輸入輸出凸塊23,25與透明基板12之輸入輸出端子19,21之間而被壓扁。
其結果，輸入輸出凸塊23,25與輸入輸出端子19,21之間藉由夾持導電性粒子4而電性連接，於該狀態下經熱壓接頭33加熱之黏合劑樹脂硬化。藉此，可製造確保液晶驅動用IC 18之輸入輸出凸塊23,25與形成於透明基板12上之輸入輸出端子19,21之間導通性之液晶顯示面板10。此外，在輸入輸出凸塊23,25與輸入輸出端子19,21之間被夾持之導電性粒 子4之擠壓痕，會於輸入輸出端子19,21內成為壓痕出現，而如圖2所示可從透明基板12背面觀察。
不存在於輸入輸出凸塊23,25與輸入輸出端子19,21之間之導電性粒子4分散於鄰接之輸入輸出凸塊23,25間之間隙35中之黏合劑樹脂中，維持電性絕緣之狀態。因此，液晶顯示面板10謀求僅液晶驅動用IC 18之輸入輸出凸塊23,25與透明基板12之輸入輸出端子19,21之間之電導通。又，作為異向性導電膜1，並不限於熱硬化型，只要係進行加壓連接者，則亦可使用光硬化型或光熱併用型之接著劑。
[端子與凸塊之距離]
此處，液晶顯示面板1中，排列於透明基板12之構裝部27及液晶驅動用IC18之構裝面18a之各外側之第2輸出端子21b與第2輸出凸塊25b之距離，較排列於各內側之第1輸出端子21a與第1輸出凸塊25a之距離大。其原因在於，液晶驅動用IC18，藉由連接於透明基板12時被熱壓接頭33加熱擠壓，在未形成有輸入輸出凸塊23,25之中央區域中會不停排除異向性導電膜1之黏合劑樹脂，而以輸入凸塊23及相對地排列於構裝面18a內側之第1輸出凸塊25a為支點產生彎曲之故。又，此時，在使用導電性粒子4為隨機地分散之異向性導電膜之情形，亦有因導電性粒子4偏在、凝集而局部地展開端子與凸塊之距離的情形。因此，在排列於外側之第2輸出端子21b與第2輸出凸塊25b之間導電性粒子4不會被充分地壓縮，而有導通不良之虞。
關於此點，液晶顯示面板1中，如上所述，由於係使用導電性粒子4於俯視時以既定之排列圖案規則地排列之異向性導電膜1來連 接，因此排列於透明基板12之構裝部27及液晶驅動用IC18之構裝面18a之各外側之第2輸出端子21b與第2輸出凸塊25b之距離，不會較排列於各內側之第1輸出端子21a與第1輸出凸塊25a之距離大，被抑制於至多130%以內。是以，液晶顯示面板1中，即使在排列於外側之第2輸出端子21b與第2輸出凸塊25b之間，亦能確保與排列於內側之第1輸出端子21a與第1輸出凸塊25a之間同樣良好之導通性。
此外，第1、第2輸出端子21a,21b與第1、第2輸出凸塊25a,25b之距離，可在連接液晶驅動用IC18後，切斷第1、第2輸出凸塊25a,25b之連接位置，藉由測量從其切斷面露出之第1輸出端子21a與第1輸出凸塊25a之間、及第2輸出端子21b與第2輸出凸塊25b之間而得知。
又，可確認到，各輸入輸出端子19,21與輸入輸出凸塊23,25之間之距離，可藉由以相對於異向性導電膜1所含有之導電性粒子4之平均粒子徑之比例加以對比，而可在不論所使用之導電性粒子4之粒子徑為何，均具備藉由壓縮導電性粒子4而具備良好導通性所必需的距離。因此，本說明書中，輸入輸出端子19,21與輸入輸出凸塊23,25之間之距離係以相對於導電性粒子之平均粒子徑之比例(%)予以說明。
[寬度方向之中心]
液晶顯示面板1中，較佳為在液晶驅動用IC18之排列有輸出凸塊25之輸出凸塊排26之中心部中，排列於外側之相對向之第2輸出端子21b與第2輸出凸塊25b之距離，在排列於內側之相對向之第1輸出端子21a與第1輸出凸塊25a之距離之130%以內。液晶驅動用IC18之輸出凸塊排26之中心部，從熱壓接頭33之熱加壓面之各角部起距離最遠，成為在第2輸出 凸塊排26b中彎曲相對最大之位置。
是以，可想見在該輸出凸塊排26之中心部中，排列於外側之相對向之第2輸出端子21b與第2輸出凸塊25b之距離在排列於內側之相對向之第1輸出端子21a與第1輸出凸塊25a之距離之130%以內，藉此所有輸入輸出端子19,21與輸入輸出凸塊23,25之間之距離係在此以下，壓縮導電性粒子4而具備良好導通性。
[與排列方向之兩端之對比]
又，液晶顯示面板1，在將排列於透明基板12與液晶驅動用IC18之各外側之第2輸出端子21b與第2輸出凸塊25b之距離DO與排列於透明基板12與液晶驅動用IC18之各內側之第1輸出端子21a與第1輸出凸塊25a之距離Di之比例設為D(=DO/Di)時，較佳為在液晶驅動用IC18之輸出凸塊25之排列方向兩端中排列於透明基板12及液晶驅動用IC18之各外側之相對向之第2輸出端子21b與第2輸出凸塊25b之平均距離dO與排列於各內側之相對向之第1輸出端子21a與第1輸出凸塊25a之平均距離di的比例d(=dO/di)之130%以內。
液晶驅動用IC18之輸出凸塊25之排列方向之兩端部彎曲較少，排列於透明基板12及液晶驅動用IC18之各外側之相對向之第2輸出端子21b與第2輸出凸塊25b之平均距離dO與排列於各內側之相對向之第1輸出端子21a與第1輸出凸塊25a之平均距離di的比例d(=dO/di)大致相等，於內外均具備良好導通性。是以，可想見藉由使分別排列於外側與內側之第1、第2輸出端子21a,21b與第1、第2輸出凸塊25a,25b之距離之比例D在輸出凸塊25之排列方向之兩端部中之上述比例d之130%以內， 該第1、第2輸出端子21a,21b與第1、第2輸出凸塊25a,25b，係與在輸出凸塊25之排列方向之兩端部中之第1輸出端子21a及第1輸出凸塊25a以及第2輸出端子21b及第2輸出凸塊25b同樣地均具備良好之導通性。
[寬度方向之中心]
液晶顯示面板1，較佳為在液晶驅動用IC18之排列有輸出凸塊25之輸出凸塊排26之中心部中，第2輸出端子21b與第2輸出凸塊25b之距離DO與排列於透明基板12與液晶驅動用IC18之各內側之第1輸出端子21a與第1輸出凸塊25a之距離Di的比例D(=DO/Di)在輸出凸塊25之排列方向之兩端部中之上述比例d之130%以內。如上所述，液晶驅動用IC18之排列有輸出凸塊25之輸出凸塊排26之中心部，從熱壓接頭33之熱加壓面之各角部起距離最遠，成為在第2輸出凸塊排26b中彎曲相對最大之位置。
是以，可想見在該輸出凸塊排26之中心部中，第2輸出端子21b與第2輸出凸塊25b之距離DO與排列於透明基板12與液晶驅動用IC18之各內側之第1輸出端子21a與第1輸出凸塊25a之距離Di的比例D(=DO/Di)在輸出凸塊25之排列方向之兩端部中之上述比例d之130%以內，藉此所有第1、第2輸出端子21a,21b與第1、第2輸出凸塊25a,25b，係與在輸出凸塊25之排列方向之兩端部中之第1輸出端子21a及第1輸出凸塊25a以及第2輸出端子21b及第2輸出凸塊25b同樣地均具備良好之導通性。
[在輸入輸出凸塊排之兩端部中之平均距離]
又，液晶顯示面板1，較佳為在透明基板12之第2端子區域27b及液晶驅動用IC18之第2凸塊區域18c中排列於各外側之相對向之第2輸出端 子21b與第2輸出凸塊25b之距離DO，係在透明基板12之第2端子區域27b及液晶驅動用IC18之第2凸塊區域18c中排列於各外側之第2輸出端子排22b與第2輸出凸塊排26b兩端部之相對向之第2輸出端子21b與第2輸出凸塊25b之距離與在透明基板12之第1端子區域27a及液晶驅動用IC18之第1凸塊區域18b中輸入端子排20與輸入凸塊排24兩端部之相對向之輸入端子19與輸入凸塊23之距離的平均距離dAVE之110%以內。
此外，所謂輸入端子排20與輸入凸塊排24之兩端部，係指輸入端子排20與輸入凸塊排24在與輸入端子19及輸入凸塊23之排列方向正交之寬度方向並列複數排時排列於各外側之輸入端子排20與輸入凸塊排24之兩端部。
液晶驅動用IC18之輸入輸出凸塊23,25之排列方向之兩端部，由於承受來自熱壓接頭33之壓力故彎曲較少，在排列於透明基板12及液晶驅動用IC18之各外側之輸入端子排20之兩端部中相對向之輸入端子19與輸入凸塊23之各距離、及在第2輸出端子排22b之兩端部中相對向之第2輸出端子21b與第2輸出凸塊25b之各距離之合計4點的距離大致相等，而具備良好導通性。
是以，在透明基板12之第2端子區域27b及液晶驅動用IC18之第2凸塊區域18c中排列於各外側之相對向之第2輸出端子21b與第2輸出凸塊25b之距離DO，係在輸入端子排20及輸入凸塊排24之兩端部中相對向之輸入端子19與輸入凸塊23之各距離、以及在第2輸出端子排22b及第2輸出凸塊排26b之兩端部中之第2輸出端子21b與第2輸出凸塊25b之各距離之合計4點的平均距離dAVE之110%以內，藉此該第2輸出端子21b 與第2輸出凸塊25b，係與在輸入端子排20及輸入凸塊排24以及第2輸出端子排22b及第2輸出凸塊排26b之各兩端部中之輸入端子19及輸入凸塊23以及第2輸出端子21b及第2輸出凸塊25b同樣地，具備良好導通性。
[寬度方向之中心]
液晶顯示面板1中，較佳為液晶驅動用IC18之排列有輸出凸塊25之輸出凸塊排26之中心部中之第2輸出端子21b與第2輸出凸塊25b之距離DO，係在輸入端子排20及輸入凸塊排24之兩端部中相對向之輸入端子19與輸入凸塊23之各距離、以及在第2輸出端子排22b及第2輸出凸塊排26b之兩端部中之第2輸出端子21b與第2輸出凸塊25b之各距離之合計4點之平均距離dAVE之110%以內。如上所述，液晶驅動用IC18之排列有輸出凸塊25之輸出凸塊排26之中心部，從熱壓接頭33之熱加壓面之各角部起距離最遠，成為在第2輸出凸塊排26b中彎曲相對最大之位置。
是以，可想見在該輸出凸塊排26之中心部中，第2輸出端子21b與第2輸出凸塊25b之距離DO在上述平均距離dAVE之110%以內，藉此所有第2輸出端子21b與第2輸出凸塊25b，係與在輸入端子排20及輸入凸塊排24之兩端部中相對向之輸入端子19與輸入凸塊23、以及在第2輸出端子排22b及第2輸出凸塊排26b之兩端部中之第2輸出端子21b與第2輸出凸塊25b同樣地均具備良好之導通性。
此處，IC之凸塊有於凸塊面形成有凹凸形状者。例如有凸塊面為中央凹入之形状(圖9(A))、凹凸連續之形状(圖9(B))、中央隆起之形状(圖9(C))等各種形状。又，形成於凸塊面之凹凸形状，有在凸塊之寬度方向形成者、在長度方向形成者等各式各種形狀。其他凹凸形状， 亦有形成於凸塊面之一部分之情形。又，凹凸之高低差或凹部區域與凸部區域之面積比例亦為各式各樣。
本發明即使係此種凸塊表面非平滑之凸塊亦可使輸入輸出凸塊中之粒子捕捉性為一定程度以上，具備良好之導通性。具體而言，只要凹凸之最大高低差在導電粒子徑之50%以內，即使有如上述之彎曲，亦能得到充分之粒子捕捉性。
[實施例]
[第1實施例]
其次，對本發明之實施例進行說明。於第1實施例中，使用規則排列有導電性粒子之異向性導電膜、及隨機地分散有導電性粒子之異向性導電膜，製作將評價用IC連接於評價用玻璃基板之連接體樣本，藉由剖面觀察將端子與凸塊之距離以導電性粒子之平均粒子徑之比例求出，且求出在評價用IC內側之端子排中之端子與凸塊之距離與在外側端子排中之端子與凸塊之距離的比例。又，測定各連接體樣本之初期導通電阻、可靠性實驗後之導通電阻、以及鄰接之IC凸塊間之短路發生率。
[異向性導電膜]
用於評價用IC之連接之異向性導電膜之黏合劑樹脂層係藉由調整於溶劑中添加有苯氧基樹脂(商品名：YP50，新日鐵化學公司製)60質量份、環氧樹脂(商品名：jER828，三菱化學公司製)40質量份、及陽離子系硬化劑(商品名：SI-60L，三新化學工業公司製)2質量份之黏合劑樹脂組成物，並將該黏合劑樹脂組成物塗佈於剝離膜上並加以乾燥而形成。
[剖面觀察及導通電阻測定用之評價用IC]
作為剖面觀察及導通電阻測定用之評價元件，係準備了外形1.0mm×20mm、1.5mm×20mm、2.0mm×20mm之3種。所有評價元件，均形成有厚度0.2mm、寬度15μ×長度100μm、高度12μm之凸塊(鍍銅)。
[IC凸塊間短路測定用之評價用IC]
作為IC凸塊間短路測定用之評價元件，使用外形0.7mm×20mm、厚度0.2mm、凸塊(鍍銅)寬度15μm×長度100μm、高度12μm、凸塊間之間隙寬度7.5μm之評價用IC。
[凸塊排列]
如圖7、圖8所示，各評價用IC18形成為大致矩形状，且設有沿著長度方向排列有複數個輸入輸出凸塊23,25之輸入輸出凸塊排24,26。輸入凸塊排24，係於評價用IC之一側緣以1排形成。輸出凸塊排26，係於評價用IC之另一側緣以3排形成。亦即，評價用IC18中，沿著評價用IC之長度方向排列有複數個輸出凸塊25之3個輸出凸塊排26-1、26-2、26-3係並列於寬度方向。此處，係將評價用IC18之排列於最內側之輸出凸塊排26-1設為第1排，將排列於最外側之輸出凸塊排26-3設為第3排，將排列於正中央之輸出凸塊排26-2設為第2排。
[評價用玻璃基板]
作為將剖面觀察及導通電阻測定用之評價用IC及IC凸塊間短路測定用之評價用IC加以連接之評價用玻璃基板12，使用形成有將複數個與外形30mm×50mm、厚度0.5mm、剖面觀察及導通電阻測定用之評價用IC18之凸塊相同尺寸且相同間距之由ITO配線構成之輸入輸出端子19,21並排複數排而成之端子排。
將異向性導電膜暫貼於該評價用玻璃基板12之後，一面取得IC凸塊與基板電極之對準一面搭載評價用IC18，利用熱壓接頭以180℃、80MPa、5sec之條件進行熱壓接，藉此製作連接體樣本。對各連接體樣本，測定初期導通電阻、可靠性實驗後之導通電阻、及鄰接之IC凸塊間之短路發生率。可靠性實驗，係將連接體樣本置於溫度85℃、濕度85%RH之恆溫槽中五百個小時。
又，IC凸塊間之短路發生率，將3000ppm未滿評價為最佳(A)，將300ppm以上1000ppm未滿評價為良好(B)，將1000ppm以上評價為不良(C)。
[實施例1]
於實施例1中，使用黏合劑樹脂層中規則排列有導電性粒子之異向性導電膜。實施例1中使用之異向性導電膜係藉由以下方法而製造：將黏著劑塗佈於可延伸之片材上，且於其上將導電性粒子以晶格狀且均勻地單層排列之後，使該片材以既定延伸倍率延伸，於該狀態下對黏合劑樹脂層進行層壓。所使用之導電性粒子(商品名：AUL704，積水化學工業公司製)之粒子徑為4μm，粒子數量密度為28000個/mm2。
實施例1之連接體樣本，初期導通電阻為0.2Ω，在可靠性試驗後之導通電阻為2.4Ω。又，IC凸塊間短路發生率亦為300ppm未滿(A)。
[實施例2]
於實施例2中，使用粒子數量密度為5200個/mm2之異向性導電膜，除此之外，設為與實施例1相同之條件。
實施例2之連接體樣本，初期導通電阻為0.4Ω，在可靠性 試驗後之導通電阻為3.4Ω。又，IC凸塊間短路之發生率亦為300ppm未滿(A)。
[實施例3]
於實施例3中，使用粒子徑3μm之導電性粒子(商品名：AUL703，積水化學工業公司製)，並使用粒子數量密度以50000個/mm2規則排列之異向性導電膜，除此以外，設為與實施例1相同之條件。
實施例3之連接體樣本，初期導通電阻為0.2Ω，在可靠性試驗後之導通電阻為2.5Ω。又，IC凸塊間短路之發生率亦為300ppm未滿(A)。
[實施例4]
於實施例4中，使用粒子徑5μm之導電性粒子(商品名：AUL705，積水化學工業公司製)，並使用粒子數量密度以18000個/mm2規則排列之異向性導電膜，除此之外，設為與實施例1相同之條件。
實施例4之連接體樣本，初期導通電阻為0.2Ω，在可靠性試驗後之導通電阻為3.0Ω。又，IC凸塊間短路之發生率為300ppm以上1000ppm未滿(B)。
[比較例1]
於比較例1中，使用藉由向黏合劑樹脂組成物中添加導電性粒子並調整、且於剝離膜上塗佈、煅燒而使導電性粒子隨機地分散於黏合劑樹脂層中之異向性導電膜。所使用之導電性粒子(商品名：AUL704，積水化學工業公司製)之粒子徑為4μm，粒子數量密度為60000個/mm2。
比較例1之連接體樣本，初期導通電阻為0.2Ω，在可靠性 試驗後之導通電阻為2.8Ω。又，IC凸塊間短路之發生率為1000ppm以上(C)。
於第1實施例中，針對實施例1~4及比較例1之各連接體樣本，如圖7中A-A’所示，將輸入輸出凸塊排24,26之中央部於評價用IC18之寬度方向切斷，進行了剖面觀察。接著，如圖8所示，將在第1,3排之輸出凸塊排26-1、26-3中央部之輸出端子21與輸出凸塊25之距離D1,D3以相對於導電性粒子之粒子徑之比例加以求出，且算出了相對於第1排輸出凸塊排26-1中央部之距離D1之第3排輸出凸塊排26-3中央部之距離D3 的比例D(=D3/D1)。又，計算了在第1,3排之輸出凸塊排26-1、26-3中央部之輸出端子21與輸出凸塊25之導電性粒子之捕捉數。
[實施例1之結果]
於使用評價用IC(1×20mm)之實施例1中，在第1排輸出凸塊排26-1中央部之輸出端子21與輸出凸塊25之距離D1，為導電性粒子徑(4μm)之62%且粒子捕捉數為37個，在第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3，為導電性粒子徑(4μm)之64%且粒子捕捉數為35個。相對於第1排輸出端子21與輸出凸塊25之距離D1之第3排輸出端子21與輸出凸塊25之距離D3的比例D(=D3/D1)為1.03。
於使用評價用IC(1.5×20mm)之實施例1中，在第1排輸出凸塊排26-1中央部之輸出端子21與輸出凸塊25之距離D1，為導電性粒子徑(4μm)之61%且粒子捕捉數為36個，在第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3，為導電性粒子徑(4μm)之65%且粒子捕捉數為34個。相對於第1排輸出端子21與輸出凸塊25之距離D1之第3排輸出端子21與輸出凸塊25之距離D3的比例D(=D3/D1)為1.07。
於使用評價用IC(2×20mm)之實施例1中，在第1排輸出凸塊排26-1中央部之輸出端子21與輸出凸塊25之距離D1，為導電性粒子徑(4μm)之60%且粒子捕捉數為36個，在第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3，為導電性粒子徑(4μm)之67%且粒子捕捉數為32個。相對於第1排輸出端子21與輸出凸塊25之距離D1之第3排輸出端子21與輸出凸塊25之距離D3的比例D(=D3/D1) 為1.12。
[實施例2之結果]
於使用評價用IC(1×20mm)之實施例2中，在第1排輸出凸塊排26-1中央部之輸出端子21與輸出凸塊25之距離D1，為導電性粒子徑(4μm)之57%且粒子捕捉數為6個，在第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3，為導電性粒子徑(4μm)之62%且粒子捕捉數為6個。相對於第1排輸出端子21與輸出凸塊25之距離D1之第3排輸出端子21與輸出凸塊25之距離D3的比例D(=D3/D1)為1.09。
於使用評價用IC(1.5×20mm)之實施例2中，在第1排輸出凸塊排26-1中央部之輸出端子21與輸出凸塊25之距離D1，為導電性粒子徑(4μm)之56%且粒子捕捉數為7個，在第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3，為導電性粒子徑(4μm)之64%且粒子捕捉數為6個。相對於第1排輸出端子21與輸出凸塊25之距離D1之第3排輸出端子21與輸出凸塊25之距離D3的比例D(=D3/D1)為1.14。
於使用評價用IC(2×20mm)之實施例2中，在第1排輸出凸塊排26-1中央部之輸出端子21與輸出凸塊25之距離D1，為導電性粒子徑(4μm)之55%且粒子捕捉數為6個，在第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3，為導電性粒子徑(4μm)之69%且粒子捕捉數為5個。相對於第1排輸出端子21與輸出凸塊25之距離D1之第3排輸出端子21與輸出凸塊25之距離D3的比例D(=D3/D1)為1.25。
[實施例3之結果]
於使用評價用IC(1×20mm)之實施例3中，在第1排輸出凸塊排26-1中央部之輸出端子21與輸出凸塊25之距離D1，為導電性粒子徑(3μm)之69%且粒子捕捉數為61個，在第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3，為導電性粒子徑(3μm)之70%且粒子捕捉數為58個。相對於第1排輸出端子21與輸出凸塊25之距離D1之第3排輸出端子21與輸出凸塊25之距離D3的比例D(=D3/D1)為1.01。
於使用評價用IC(1.5×20mm)之實施例3中，在第1排輸出凸塊排26-1中央部之輸出端子21與輸出凸塊25之距離D1，為導電性粒子徑(3μm)之68%且粒子捕捉數為60個，在第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3，為導電性粒子徑(3μm)之74%且粒子捕捉數為55個。相對於第1排輸出端子21與輸出凸塊25之距離D1之第3排輸出端子21與輸出凸塊25之距離D3的比例D(=D3/D1)為1.09。
於使用評價用IC(2×20mm)之實施例3中，在第1排輸出凸塊排26-1中央部之輸出端子21與輸出凸塊25之距離D1，為導電性粒子徑(3μm)之68%且粒子捕捉數為63個，在第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3，為導電性粒子徑(3μm)之80%且粒子捕捉數為52個。相對於第1排輸出端子21與輸出凸塊25之距離D1之第3排輸出端子21與輸出凸塊25之距離D3的比例D(=D3/D1)為1.18。
[實施例4之結果]
於使用評價用IC(1×20mm)之實施例4中，在第1排輸出凸塊排26-1中央部之輸出端子21與輸出凸塊25之距離D1，為導電性粒子徑(5μm)之55%且粒子捕捉數為24個，在第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3，為導電性粒子徑(5μm)之57%且粒子捕捉數為23個。相對於第1排輸出端子21與輸出凸塊25之距離D1之第3排輸出端子21與輸出凸塊25之距離D3的比例D(=D3/D1)為1.04。
於使用評價用IC(1.5×20mm)之實施例4中，在第1排輸出凸塊排26-1中央部之輸出端子21與輸出凸塊25之距離D1，為導電性粒子徑(5μm)之54%且粒子捕捉數為23個，在第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3，為導電性粒子徑(5μm)之57%且粒子捕捉數為22個。相對於第1排輸出端子21與輸出凸塊25之距離D1之第3排輸出端子21與輸出凸塊25之距離D3的比例D(=D3/D1)為1.06。
於使用評價用IC(2×20mm)之實施例4中，在第1排輸出凸塊排26-1中央部之輸出端子21與輸出凸塊25之距離D1，為導電性粒子徑(5μm)之55%且粒子捕捉數為23個，在第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3，為導電性粒子徑(5μm)之59%且粒子捕捉數為21個。相對於第1排輸出端子21與輸出凸塊25之距離D1之第3排輸出端子21與輸出凸塊25之距離D3的比例D(=D3/D1)為1.07。
[比較例1之結果]
於使用評價用IC(1×20mm)之比較例1中，在第1排輸出凸塊排26-1 中央部之輸出端子21與輸出凸塊25之距離D1，為導電性粒子徑(4μm)之58%且粒子捕捉數為27個，在第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3，為導電性粒子徑(4μm)之84%且粒子捕捉數為7個。相對於第1排輸出端子21與輸出凸塊25之距離D1之第3排輸出端子21與輸出凸塊25之距離D3的比例D(=D3/D1)為1.45。
於使用評價用IC(1.5×20mm)之比較例1中，在第1排輸出凸塊排26-1中央部之輸出端子21與輸出凸塊25之距離D1，為導電性粒子徑(4μm)之54%且粒子捕捉數為29個，在第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3，為導電性粒子徑(4μm)之95%且粒子捕捉數為4個。相對於第1排輸出端子21與輸出凸塊25之距離D1之第3排輸出端子21與輸出凸塊25之距離D3的比例D(=D3/D1)為1.76。
於使用評價用IC(2×20mm)之比較例1中，在第1排輸出凸塊排26-1中央部之輸出端子21與輸出凸塊25之距離D1，為導電性粒子徑(4μm)之51%且粒子捕捉數為25個，在第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3，為導電性粒子徑(4μm)之108%且粒子捕捉數為2個。相對於第1排輸出端子21與輸出凸塊25之距離D1之第3排輸出端子21與輸出凸塊25之距離D3的比例D(=D3/D1)為2.12。
[第1實施例之考察]
如表1所示，根據使用導電性粒子規則排列之異向性導電膜所作成之實施例1~4之連接體樣本之任一者，排列於最外側之第3排輸出凸塊排26 -3中央部之輸出端子21與輸出凸塊25之距離D3，為在第1排輸出凸塊排26-1中央部之輸出端子21與輸出凸塊25之距離D1之130%以下而在第1排與第3排幾乎無差異，藉由導電性粒子之壓縮而具備良好導通性。
是以，於實施例1~4中，在輸出端子21與輸出凸塊25之距離最容易拉開之第3排輸出凸塊排26-3中央部中，由於具有與第1排無大差異之距離，因此第2排或第3排之其他輸出端子21與輸出凸塊25之距離亦與第1排同樣地狹窄，可想見可藉由導電性粒子之壓縮而具有良好之導電性。又，根據實施例1~4之連接體樣本，由於在第3排輸出凸塊排26-3中央亦被壓入導電性粒子，因此亦能清楚地確認出現於評價用玻璃基板12背面之導電性粒子之壓痕(參照圖2)，而亦能以良好精度透過壓痕進行導通性之確認。
另一方面，於比較例1中，排列於最外側之第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3，較在第1排輸出凸塊排26-1中央部之輸出端子21與輸出凸塊25之距離D1之130%大，而損害導通性。又，於比較例1中，導電性粒子之壓入不足，而亦難以透過壓痕觀察確認導通性。
[第2實施例]
其次，說明第2實施例。於第2實施例中，如圖7中B-B’及C-C’所示，將實施例1~4、比較例1之各連接體樣本之輸入輸出凸塊排24,26之兩端部於評價用IC18之寬度方向切斷，進行了剖面觀察。接著，將第1,3排之輸出凸塊排26-1、26-3兩端部之輸出端子21與輸出凸塊25之平均距離d1,d3以相對於導電性粒子之粒子徑之比例求出，且算出相對於第1排輸出 凸塊排26-1兩端部之平均距離d1之第3排輸出凸塊排26-3兩端部之平均距離的比例d(=d3/d1)。此外，在第1,3排之輸出凸塊排26兩端部之端子與凸塊之距離差為30%以內。
其次，算出在第1實施例中算出之相對於第1排輸出凸塊排26-1中央部之距離D1之第3排輸出凸塊排26-3之中央部之距離D3的比例D(=D3/D1)、以及相對於第1排輸出凸塊排26-1兩端部之平均距離d1之第3排輸出凸塊排26-3兩端部之平均距離的比例d(=d3/d1)之比例(D/d)。其原因在於，輸出凸塊排26之兩端，較易受到熱壓接頭之擠壓力，在第1,3排中輸出端子21與輸出凸塊25之距離均為狹窄而容易被壓入導電性粒子，因此將輸出端子21與輸出凸塊25之距離最容易拉開之第3排輸出凸塊排26-3中央部之相對於第1排輸出凸塊排26-1中央部的比例D，透過與第3排輸出凸塊排26-3兩端部之相對於第1排輸出凸塊排26-1兩端部的比例d的對比來進行評價。在輸出端子21與輸出凸塊25之距離最容易拉開之輸出凸塊排26之中央部之比例D與在輸出凸塊排26兩端部之比例d無大差異時，其他所有輸出端子21與輸出凸塊25，係與第1,3排之輸出凸塊排26-1、26-3之兩端部同樣地，距離狹窄而被壓入導電性粒子。此外，第2實施例亦同樣地，計算了在第1,3排之輸出凸塊排26-1、26-3兩端部之輸出端子21與輸出凸塊25之導電性粒子之平均捕捉數。
[實施例1之結果]
如表2所示，於使用評價用IC(1×20mm)之實施例1中，在第1排輸出凸塊排26-1兩端部之輸出端子21與輸出凸塊25之平均距離d1，為導電性粒子徑(4μm)之58%且平均粒子捕捉數為34個，在第3排輸出凸塊排26-3兩端部之輸出端子21與輸出凸塊25之距離d3，為導電性粒子徑(4μm)之59%且平均粒子捕捉數為33個。
相對於第1排輸出凸塊排26-1兩端部之平均距離d1之第3排輸出凸塊排26-3兩端部之平均距離d3的比例d(=d3/d1)為1.02，其與在第1實施例中求出之相對於輸出凸塊排26之中央部之第1排輸出端子 21與輸出凸塊25之距離D1之第3排輸出端子21與輸出凸塊25之距離D3的比例D(=D3/D1=1.03)之比例(D/d)為1.01。
於使用評價用IC(1.5×20mm)之實施例1中，在第1排輸出凸塊排26-1兩端部之輸出端子21與輸出凸塊25之平均距離d1，為導電性粒子徑(4μm)之59%且平均粒子捕捉數為34個，在第3排輸出凸塊排26-3兩端部之輸出端子21與輸出凸塊25之平均距離d3，為導電性粒子徑(4μm)之60%且平均粒子捕捉數為32個。
相對於第1排輸出凸塊排26-1兩端部之平均距離d1之第3排輸出凸塊排26-3兩端部之平均距離d3的比例d(=d3/d1)為1.02，其與在第1實施例中求出之相對於輸出凸塊排26中央部之第1排輸出端子21與輸出凸塊25之距離D1之第3排輸出端子21與輸出凸塊25之距離D3的比例D(=D3/D1=1.07)之比例(D/d)為1.05。
於使用評價用IC(2×20mm)之實施例1中，在第1排輸出凸塊排26-1兩端部之輸出端子21與輸出凸塊25之平均距離d1，為導電性粒子徑(4μm)之60%且平均粒子捕捉數為35個，在第3排輸出凸塊排26-3兩端部之輸出端子21與輸出凸塊25之距離d3，為導電性粒子徑(4μm)之62%且平均粒子捕捉數為33個。
相對於第1排輸出凸塊排26-1兩端部之平均距離d1之第3排輸出凸塊排26-3兩端部之平均距離d3的比例d(=d3/d1)為1.03，其與在第1實施例中求出之相對於輸出凸塊排26中央部之第1排輸出端子21與輸出凸塊25之距離D1之第3排輸出端子21與輸出凸塊25之距離D3的比例D(=D3/D1=1.12)之比例(D/d)為1.09。
[實施例2之結果]
於使用評價用IC(1×20mm)之實施例2中，在第1排輸出凸塊排26-1兩端部之輸出端子21與輸出凸塊25之平均距離d1，為導電性粒子徑(4μm)之57%且平均粒子捕捉數為5個，在第3排輸出凸塊排26-3兩端部之輸出端子21與輸出凸塊25之平均距離d3，為導電性粒子徑(4μm)之59%且平均粒子捕捉數為6個。
相對於第1排輸出凸塊排26-1兩端部之平均距離d1之第3排輸出凸塊排26-3兩端部之平均距離d3的比例d(=d3/d1)為1.04，其與在第1實施例中求出之相對於輸出凸塊排26中央部之第1排輸出端子21與輸出凸塊25之距離D1之第3排輸出端子21與輸出凸塊25之距離D3的比例D(=D3/D1=1.09)之比例(D/d)為1.05。
於使用評價用IC(1.5×20mm)之實施例2中，在第1排輸出凸塊排26-1兩端部之輸出端子21與輸出凸塊25之平均距離d1，為導電性粒子徑(4μm)之56%且平均粒子捕捉數為6個，在第3排輸出凸塊排26-3兩端部之輸出端子21與輸出凸塊25之平均距離d3，為導電性粒子徑(4μm)之58%且平均粒子捕捉數為6個。
相對於第1排輸出凸塊排26-1兩端部之平均距離d1之第3排輸出凸塊排26-3兩端部之平均距離d3的比例d(=d3/d1)為1.04，其與在第1實施例中求出之相對於輸出凸塊排26中央部之第1排輸出端子21與輸出凸塊25之距離D1之第3排輸出端子21與輸出凸塊25之距離D3的比例D(=D3/D1=1.14)之比例(D/d)為1.10。
於使用評價用IC(2×20mm)之實施例2中，在第1排輸出 凸塊排26-1兩端部之輸出端子21與輸出凸塊25之平均距離d1，為導電性粒子徑(4μm)之57%且平均粒子捕捉數為6個，在第3排輸出凸塊排26-3兩端部之輸出端子21與輸出凸塊25之平均距離d3，為導電性粒子徑(4μm)之59%且平均粒子捕捉數為5個。
相對於第1排輸出凸塊排26-1兩端部之平均距離d1之第3排輸出凸塊排26-3兩端部之平均距離d3的比例d(=d3/d1)為1.04，其與在第1實施例中求出之相對於輸出凸塊排26中央部之第1排輸出端子21與輸出凸塊25之距離D1之第3排輸出端子21與輸出凸塊25之距離D3的比例D(=D3/D1=1.25)之比例(D/d)為1.20。
[實施例3之結果]
於使用評價用IC(1×20mm)之實施例3中，在第1排輸出凸塊排26-1兩端部之輸出端子21與輸出凸塊25之平均距離d1，為導電性粒子徑(3μm)之67%且平均粒子捕捉數為59個，在第3排輸出凸塊排26-3兩端部之輸出端子21與輸出凸塊25之平均距離d3，為導電性粒子徑(3μm)之68%且平均粒子捕捉數為57個。
相對於第1排輸出凸塊排26-1兩端部之平均距離d1之第3排輸出凸塊排26-3兩端部之平均距離d3的比例d(=d3/d1)為1.01，其與在第1實施例中求出之相對於輸出凸塊排26中央部之第1排輸出端子21與輸出凸塊25之距離D1之第3排輸出端子21與輸出凸塊25之距離D3的比例D(=D3/D1=1.01)之比例(D/d)為1.00。
於使用評價用IC(1.5×20mm)之實施例3中，在第1排輸出凸塊排26-1兩端部之輸出端子21與輸出凸塊25之平均距離d1，為導電 性粒子徑(3μm)之67%且平均粒子捕捉數為58個，在第3排輸出凸塊排26-3兩端部之輸出端子21與輸出凸塊25之平均距離d3，為導電性粒子徑(3μm)之69%且平均粒子捕捉數為56個。
相對於第1排輸出凸塊排26-1兩端部之平均距離d1之第3排輸出凸塊排26-3兩端部之平均距離d3的比例d(=d3/d1)為1.03，其與在第1實施例中求出之相對於輸出凸塊排26中央部之第1排輸出端子21與輸出凸塊25之距離D1之第3排輸出端子21與輸出凸塊25之距離D3的比例D(=D3/D1=1.09)之比例(D/d)為1.06。
於使用評價用IC(2×20mm)之實施例3中，在第1排輸出凸塊排26-1兩端部之輸出端子21與輸出凸塊25之平均距離d1，為導電性粒子徑(3μm)之66%且平均粒子捕捉數為57個，在第3排輸出凸塊排26-3兩端部之輸出端子21與輸出凸塊25之平均距離d3，為導電性粒子徑(3μm)之69%且平均粒子捕捉數為54個。
相對於第1排輸出凸塊排26-1兩端部之平均距離d1之第3排輸出凸塊排26-3兩端部之平均距離d3的比例d(=d3/d1)為1.05，其與在第1實施例中求出之相對於輸出凸塊排26中央部之第1排輸出端子21與輸出凸塊25之距離D1之第3排輸出端子21與輸出凸塊25之距離D3的比例D(=D3/D1=1.18)之比例(D/d)為1.12。
[實施例4之結果]
於使用評價用IC(1×20mm)之實施例4中，在第1排輸出凸塊排26-1兩端部之輸出端子21與輸出凸塊25之平均距離d1，為導電性粒子徑(5μm)之55%且平均粒子捕捉數為24個，在第3排輸出凸塊排26-3兩端部之 輸出端子21與輸出凸塊25之平均距離d3，為導電性粒子徑(5μm)之57%且平均粒子捕捉數為26個。
相對於第1排輸出凸塊排26-1兩端部之平均距離d1之第3排輸出凸塊排26-3兩端部之平均距離d3的比例d(=d3/d1)為1.04，其與在第1實施例中求出之相對於輸出凸塊排26中央部之第1排輸出端子21與輸出凸塊25之距離D1之第3排輸出端子21與輸出凸塊25之距離D3的比例D(=D3/D1=1.04)之比例(D/d)為1.00。
於使用評價用IC(1.5×20mm)之實施例4中，在第1排輸出凸塊排26-1兩端部之輸出端子21與輸出凸塊25之平均距離d1，為導電性粒子徑(5μm)之54%且平均粒子捕捉數為22個，在第3排輸出凸塊排26-3兩端部之輸出端子21與輸出凸塊25之平均距離d3，為導電性粒子徑(5μm)之55%且平均粒子捕捉數為23個。
相對於第1排輸出凸塊排26-1兩端部之平均距離d1之第3排輸出凸塊排26-3兩端部之平均距離d3的比例d(=d3/d1)為1.02，其與在第1實施例中求出之相對於輸出凸塊排26中央部之第1排輸出端子21與輸出凸塊25之距離D1之第3排輸出端子21與輸出凸塊25之距離D3的比例D(=D3/D1=1.06)之比例(D/d)為1.04。
於使用評價用IC(2×20mm)之實施例4中，在第1排輸出凸塊排26-1兩端部之輸出端子21與輸出凸塊25之平均距離d1，為導電性粒子徑(5μm)之54%且平均粒子捕捉數為22個，在第3排輸出凸塊排26-3兩端部之輸出端子21與輸出凸塊25之平均距離d3，為導電性粒子徑(5μm)之57%且平均粒子捕捉數為24個。
相對於第1排輸出凸塊排26-1兩端部之平均距離d1之第3排輸出凸塊排26-3兩端部之平均距離d3的比例d(=d3/d1)為1.06，其與在第1實施例中求出之相對於輸出凸塊排26中央部之第1排輸出端子21與輸出凸塊25之距離D1之第3排輸出端子21與輸出凸塊25之距離D3的比例D(=D3/D1=1.07)之比例(D/d)為1.01。
[比較例1之結果]
於使用評價用IC(1×20mm)之比較例1中，在第1排輸出凸塊排26-1兩端部之輸出端子21與輸出凸塊25之平均距離d1，為導電性粒子徑(4μm)之55%且平均粒子捕捉數為27個，在第3排輸出凸塊排26-3兩端部之輸出端子21與輸出凸塊25之平均距離d3，為導電性粒子徑(4μm)之59%且平均粒子捕捉數為23個。
相對於第1排輸出凸塊排26-1兩端部之平均距離d1之第3排輸出凸塊排26-3兩端部之平均距離d3的比例d(=d3/d1)為1.07，其與在第1實施例中求出之相對於輸出凸塊排26中央部之第1排輸出端子21與輸出凸塊25之距離D1之第3排輸出端子21與輸出凸塊25之距離D3的比例D(=D3/D1=1.45)之比例(D/d)為1.36。
於使用評價用IC(1.5×20mm)之比較例1中，在第1排輸出凸塊排26-1兩端部之輸出端子21與輸出凸塊25之平均距離d1，為導電性粒子徑(4μm)之54%且平均粒子捕捉數為29個，在第3排輸出凸塊排26-3兩端部之輸出端子21與輸出凸塊25之平均距離d3，為導電性粒子徑(4μm)之60%且平均粒子捕捉數為25個。
相對於第1排輸出凸塊排26-1兩端部之平均距離d1之第3 排輸出凸塊排26-3兩端部之平均距離d3的比例d(=d3/d1)為1.11，其與在第1實施例中求出之相對於輸出凸塊排26中央部之第1排輸出端子21與輸出凸塊25之距離D1之第3排輸出端子21與輸出凸塊25之距離D3的比例D(=D3/D1=1.76)之比例(D/d)為1.59。
於使用評價用IC(2×20mm)之比較例1中，在第1排輸出凸塊排26-1兩端部之輸出端子21與輸出凸塊25之平均距離d1，為導電性粒子徑(4μm)之51%且平均粒子捕捉數為27個，在第3排輸出凸塊排26-3兩端部之輸出端子21與輸出凸塊25之平均距離d3，為導電性粒子徑(4μm)之59%且平均粒子捕捉數為22個。
相對於第1排輸出凸塊排26-1兩端部之平均距離d1之第3排輸出凸塊排26-3兩端部之平均距離d3的比例d(=d3/d1)為1.16，其與在第1實施例中求出之相對於輸出凸塊排26中央部之第1排輸出端子21與輸出凸塊25之距離D1之第3排輸出端子21與輸出凸塊25之距離D3的比例D(=D3/D1=2.12)之比例(D/d)為1.83。
[第2實施例之考察]
如表2所示，根據使用導電性粒子規則排列之異向性導電膜所作成之實施例1~4之連接體樣本之任一者，輸出端子21與輸出凸塊25之距離最容易展開之輸出凸塊排26中央部之相對於第1排之第3排輸出端子21與輸出凸塊25之距離之比例D，與輸出端子21與輸出凸塊25較接近之輸出凸塊排26兩端部之相對於第1排之第3排輸出端子21與輸出凸塊25之距離之比例d的130%以下幾乎無差異，導電性粒子被壓入而具備良好導通性。
是以，於實施例1~4中，在輸出端子21與輸出凸塊25之 距離最容易展開之輸出凸塊排26中央部中，由於具有與兩端部無大差異之距離比例，因此第2排或第3排之其他輸出端子21與輸出凸塊25之距離比例亦與第1,3排之兩端部同樣地狹窄，可想見可藉由導電性粒子之壓縮而具有良好之導電性。又，根據實施例1~4之連接體樣本，由於在輸出凸塊排26之中央部亦被壓入導電性粒子，因此亦能清楚地確認出現於評價用玻璃基板12背面之導電性粒子之壓痕，而亦能以良好精度透過壓痕進行導通性之確認。
另一方面，於比較例1中，輸出凸塊排26之中央部之相對於第1排之第3排輸出端子21與輸出凸塊25之距離比例D，相對於在兩端部之比例d較130%大，而成為損害導電性的結果。又，於比較例1中，導電性粒子之壓入不足，而亦難以透過壓痕觀察確認導通性。
[第3實施例]
其次，說明第3實施例。第3實施例中，針對實施例1~4及比較例1之各連接體樣本，算出圖7中所示之排列於輸入凸塊排24之各兩端及最外側之第3排輸出凸塊排26-3兩端之輸出端子21與輸出凸塊25之平均距離dAVE，與第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3之比例(=D3/dAVE)。其原因在於，排列於最外側之輸入輸出凸塊排24,26之各兩端，較易受到熱壓接頭之擠壓力，輸出端子21與輸出凸塊25之距離均為狹窄而容易被壓入導電性粒子，因此將輸出端子21與輸出凸塊25之距離最容易展開之第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3，透過與在排列於最外側之輸入輸出凸塊排24,26各兩端之輸出端子21與輸出凸塊25之平均距離dAVE的對比來進行評價。在第3 排輸出凸塊排26-3中央部之距離D3與排列於最外側之輸入輸出凸塊排24,26之各兩端部之平均距離dAVE無大差異時，其他所有輸出端子21與輸出凸塊25，係與排列於最外側之輸入輸出凸塊排24,26各兩端部同樣地，距離狹窄而被壓入導電性粒子。
此外，本實施例中，由於輸入凸塊排24係以1排排列，因此測定對象雖為設於該輸入凸塊排24兩端之輸入凸塊23L,23R，但在並列有複數排輸入凸塊排24時，係將排列於最外側之輸入凸塊排24兩端所設之輸入凸塊23，設為輸出端子21與輸出凸塊25之平均距離dAVE之測定對象。同樣地，本實施例中，由於輸出凸塊排26係以3排排列，因此排列於最外側之第3排輸出凸塊排26-3兩端所設之輸出凸塊25L,25R，為輸出端子21與輸出凸塊25之平均距離dAVE之測定對象。
[實施例1之結果]
如表3所示，於使用評價用IC(1×20mm)之實施例1中，第3排輸出凸塊排26-3左端之輸出凸塊25L與輸出端子21之距離d-26L，為導電性粒子徑(4μm)之59%，同右端之輸出凸塊25R與輸出端子21之距離d-26R同樣為60%，輸入凸塊排24左端之輸入凸塊23L與輸入端子19之距離d-24L同樣為58%，同右端之輸入凸塊23R與輸入端子19之距離d-24R同樣為61%，且在兩輸出凸塊25L,25R及兩輸入凸塊23L,23R之輸入輸出端子之平均距離dAVE為59.5%。此平均距離dAVE與在第3排輸出凸塊排26-3中央部 之輸出端子21與輸出凸塊25之距離D3(=64%)之比例(=D3/dAVE)為1.08。
於使用評價用IC(1.5×20mm)之實施例1中，第3排輸出凸塊排26-3左端之輸出凸塊25L與輸出端子21之距離d-26L，為導電性粒子徑(4μm)之60%，同右端之輸出凸塊25R與輸出端子21之距離d-26R同樣為62%，輸入凸塊排24左端之輸入凸塊23L與輸入端子19之距離d-24L同樣為62%，同右端之輸入凸塊23R與輸入端子19之距離d-24R同樣為61%，且在兩輸出凸塊25L,25R及兩輸入凸塊23L,23R之輸入輸出端子之平均距離dAVE為61.25%。此平均距離dAVE與第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3(=65%)之比例(=D3/dAVE)為1.04。
於使用評價用IC(2×20mm)之實施例1中，第3排輸出凸塊排26-3左端之輸出凸塊25L與輸出端子21之距離d-26L，為導電性粒子徑(4μm)之62%，同右端之輸出凸塊25R與輸出端子21之距離d-26R同樣為61%，輸入凸塊排24左端之輸入凸塊23L與輸入端子19之距離d-24L同樣為59%，同右端之輸入凸塊23R與輸入端子19之距離d-24R同樣為60%，且在兩輸出凸塊25L,25R及兩輸入凸塊23L,23R之輸入輸出端子之平均距離dAVE為60.5%。此平均距離dAVE與在第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3(=67%)之比例(=D3/dAVE)為1.06。
[實施例2之結果]
於使用評價用IC(1×20mm)之實施例2中，第3排輸出凸塊排26-3左端之輸出凸塊25L與輸出端子21之距離d-26L，為導電性粒子徑(4μm)之 59%，同右端之輸出凸塊25R與輸出端子21之距離d-26R同樣為57%，輸入凸塊排24左端之輸入凸塊23L與輸入端子19之距離d-24L同樣為60%，同右端之輸入凸塊23R與輸入端子19之距離d-24R同樣為58%，且在兩輸出凸塊25L,25R及兩輸入凸塊23L,23R之輸入輸出端子之平均距離dAVE為58.5%。此平均距離dAVE與在第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3(=62%)之比例(=D3/dAVE)為1.06。
於使用評價用IC(1.5×20mm)之實施例2中，第3排輸出凸塊排26-3左端之輸出凸塊25L與輸出端子21之距離d-26L，為導電性粒子徑(4μm)之58%，同右端之輸出凸塊25R與輸出端子21之距離d-26R同樣為58%，輸入凸塊排24左端之輸入凸塊23L與輸入端子之距離d-24L同樣為56%，同右端之輸入凸塊23R與輸入端子19之距離d-24R同樣為55%，且在兩輸出凸塊25L,25R及兩輸入凸塊23L,23R之輸入輸出端子之平均距離dAVE為56.75%。此平均距離dAVE與在第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3(=64%)之比例(=D3/dAVE)為1.09。
於使用評價用IC(2×20mm)之實施例2中，第3排輸出凸塊排26-3左端之輸出凸塊25L與輸出端子21之距離d-26L，為導電性粒子徑(4μm)之59%，同右端之輸出凸塊25R與輸出端子21之距離d-26R同樣為57%，輸入凸塊排24左端之輸入凸塊23L與輸入端子19之距離d-24L同樣為56%，同右端之輸入凸塊23R與輸入端子19之距離d-24R同樣為58%，且在兩輸出凸塊25L,25R及兩輸入凸塊23L,23R之輸入輸出端子之平均距離dAVE為57.5%。此平均距離dAVE與在第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3(=69%)之比例(=D3/dAVE)為1.08。
[實施例3之結果]
於使用評價用IC(1×20mm)之實施例3中，第3排輸出凸塊排26-3左端之輸出凸塊25L與輸出端子21之距離d-26L，為導電性粒子徑(3μm)之68%，同右端之輸出凸塊25R與輸出端子21之距離d-26R同樣為67%，輸入凸塊排24左端之輸入凸塊23L與輸入端子19之距離d-24L同樣為65%，同右端之輸入凸塊23R與輸入端子19之距離d-24R同樣為66%，且在兩輸出凸塊25L,25R及兩輸入凸塊23L,23R之輸入輸出端子之平均距離dAVE為66.5%。此平均距離dAVE與在第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3(=70%)之比例(=D3/dAVE)為1.05。
於使用評價用IC(1.5×20mm)之實施例3中，第3排輸出凸塊排26-3左端之輸出凸塊25L與輸出端子21之距離d-26L，為導電性粒子徑(3μm)之69%，同右端之輸出凸塊25R與輸出端子21之距離d-26R同樣為67%，輸入凸塊排24左端之輸入凸塊23L與輸入端子19之距離d-24L同樣為64%，同右端之輸入凸塊23R與輸入端子19之距離d-24R同樣為65%，且在兩輸出凸塊25L,25R及兩輸入凸塊23L,23R之輸入輸出端子之平均距離dAVE為66.25%。此平均距離dAVE與在第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3(=74%)之比例(=D3/dAVE)為1.06。
於使用評價用IC(2×20mm)之實施例3中，第3排輸出凸塊排26-3左端之輸出凸塊25L與輸出端子21之距離d-26L，為導電性粒子徑(3μm)之69%，同右端之輸出凸塊25R與輸出端子21之距離d-26R同樣為67%，輸入凸塊排24左端之輸入凸塊23L與輸入端子19之距離d-24L同 樣為64%，同右端之輸入凸塊23R與輸入端子19之距離d-24R同樣為66%，且在兩輸出凸塊25L,25R及兩輸入凸塊23L,23R之輸入輸出端子之平均距離dAVE為66.5%。此平均距離dAVE與在第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3(=80%)之比例(=D3/dAVE)為1.05。
[實施例4之結果]
於使用評價用IC(1×20mm)之實施例4中，第3排輸出凸塊排26-3左端之輸出凸塊25L與輸出端子21之距離d-26L，為導電性粒子徑(5μm)之57%，同右端之輸出凸塊25R與輸出端子21之距離d-26R同樣為58%，輸入凸塊排24左端之輸入凸塊23L與輸入端子19之距離d-24L同樣為54%，同右端之輸入凸塊23R與輸入端子19之距離d-24R同樣為56%，且在兩輸出凸塊25L,25R及兩輸入凸塊23L,23R之輸入輸出端子之平均距離dAVE為56.25%。此平均距離dAVE與在第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3(=57%)之比例(=D3/dAVE)為1.01。
於使用評價用IC(1.5×20mm)之實施例4中，第3排輸出凸塊排26-3左端之輸出凸塊25L與輸出端子21之距離d-26L，為導電性粒子徑(5μm)之55%，同右端之輸出凸塊25R與輸出端子21之距離d-26R同樣為57%，輸入凸塊排24左端之輸入凸塊23L與輸入端子19之距離d-24L同樣為55%，同右端之輸入凸塊23R與輸入端子19之距離d-24R同樣為56%，且在兩輸出凸塊25L,25R及兩輸入凸塊23L,23R之輸入輸出端子之平均距離dAVE為55.75%。此平均距離dAVE與在第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3(=57%)之比例(=D3/dAVE)為1.02。
於使用評價用IC(2×20mm)之實施例4中，第3排輸出凸塊排26-3左端之輸出凸塊25L與輸出端子21之距離d-26L，為導電性粒子徑(5μm)之57%，同右端之輸出凸塊25R與輸出端子21之距離d-26R同樣為56%，輸入凸塊排24左端之輸入凸塊23L與輸入端子19之距離d-24L同樣為58%，同右端之輸入凸塊23R與輸入端子19之距離d-24R同樣為55%，且在兩輸出凸塊25L,25R及兩輸入凸塊23L,23R之輸入輸出端子之平均距離dAVE為56.5%。此平均距離dAVE與在第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3(=59%)之比例(=D3/dAVE)為1.01。
[比較例1之結果]
於使用評價用IC(1×20mm)之比較例1中，第3排輸出凸塊排26-3左端之輸出凸塊25L與輸出端子21之距離d-26L，為導電性粒子徑(4μm)之59%，同右端之輸出凸塊25R與輸出端子21之距離d-26R同樣為61%，輸入凸塊排24左端之輸入凸塊23L與輸入端子19之距離d-24L同樣為57%，同右端之輸入凸塊23R與輸入端子19之距離d-24R同樣為58%，且在兩輸出凸塊25L,25R及兩輸入凸塊23L,23R之輸入輸出端子之平均距離dAVE為58.75%。此平均距離dAVE與在第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3(=84%)之比例(=D3/dAVE)為1.43。
於使用評價用IC(1.5×20mm)之比較例1中，第3排輸出凸塊排26-3左端之輸出凸塊25L與輸出端子21之距離d-26L，為導電性粒子徑(4μm)之60%，同右端之輸出凸塊25R與輸出端子21之距離d-26R同樣為61%，輸入凸塊排24左端之輸入凸塊23L與輸入端子19之距離d-24L同樣為56%，同右端之輸入凸塊23R與輸入端子19之距離d-24R同樣為57 %，且在兩輸出凸塊25L,25R及兩輸入凸塊23L,23R之輸入輸出端子之平均距離dAVE為58.5%。此平均距離dAVE與在第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3(=95%)之比例(=D3/dAVE)為1.44。
於使用評價用IC(2×20mm)之比較例1中，第3排輸出凸塊排26-3左端之輸出凸塊25L與輸出端子21之距離d-26L，為導電性粒子徑(4μm)之59%，同右端之輸出凸塊25R與輸出端子21之距離d-26R同樣為58%，輸入凸塊排24左端之輸入凸塊23L與輸入端子19之距離d-24L同樣為56%，同右端之輸入凸塊23R與輸入端子19之距離d-24R同樣為54%，且在兩輸出凸塊25L,25R及兩輸入凸塊23L,23R之輸入輸出端子之平均距離dAVE為56.75%。此平均距離dAVE與在第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3(=108%)之比例(=D3/dAVE)為1.48。
[第3實施例之考察]
如表3所示，根據使用導電性粒子規則排列之異向性導電膜所作成之實施例1~4之連接體樣本之任一者，端子與凸塊之距離最容易展開之第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3，與排列於最外側之輸入輸出凸塊排24,26各兩端部之輸出端子21與輸出凸塊25之平均距離dAVE之110%以下幾乎無差異，導電性粒子被壓入而具備良好導通性。
是以，於實施例1~4中，在輸出端子21與輸出凸塊25之距離最容易展開之第3排輸出凸塊排26-3中央部中，由於具有與排列於最外側之輸入輸出凸塊排24,26各兩端部無大差異之距離，第2排或第3排之 其他輸出端子21與輸出凸塊25之距離亦與輸入輸出凸塊排24,26之兩端部同樣地狹窄，可想見可藉由導電性粒子之壓縮而具有良好之導電性。又，根據實施例1~4之連接體樣本，由於在第3排輸出凸塊排26-3之中央部亦被壓入導電性粒子，因此亦能清楚地確認出現於評價用玻璃基板12背面之導電性粒子之壓痕，而亦能以良好精度透過壓痕進行導通性之確認。
另一方面，於比較例1中，第3排輸出凸塊排26-3中央部之輸出端子21與輸出凸塊25之距離D3，相對於排列於最外側之輸入輸出凸塊排24,26兩端部之輸出端子21與輸出凸塊25之平均距離dAVE較110%大，而成為損害導電性的結果。又，比較例1中，導電性粒子之壓入不足，而亦難以透過壓痕觀察確認導通性。
[第4實施例]
其次，說明第4實施例。於第4實施例中，作為評價元件，係使用於捕捉導電性粒子之凸塊面具有凹凸部之IC而形成連接體樣本。將此凹凸部之最大高低差在導電性粒子之粒子徑之50%以內者用於評價。其係以高精度形状測定系統(KS-1100，基恩斯(KEYENCE)股份有限公司)測定連接前之凸塊表面，進一步從剖面觀察之結果所求出。所評價之凸塊面之凹凸最大高低差，在實施例1、2及比較例1中為2μm，在實施例3中為1.5μm，在實施例4中為2.5μm。
針對上述各連接體樣本，計算在凹部區域與凸部區域之粒子捕捉數。此外，在凸塊面之凹部區域與凸部區域之面積比例，係以分別成為50%之方式設定凹部區域與凸部區域。凹部區域與凸部區域之面積，分別存在凸塊全面之35%以上。
第4實施例之IC之外形或凸塊之尺寸及凸塊間間隙寬度係與上述之評價用IC相同。又，連接第4實施例之IC之評價用基板，係與上述第1~3之實施例之評價用玻璃基板相同。
於第4實施例中，針對實施例1~4及比較例1之連接體樣本，從評價用玻璃基板之背面觀察出現於輸出端子之壓痕，計算圖7中A-A’所示之在第1,3排輸出凸塊排26-1、26-3中央部之輸出凸塊25之凹部區域與凸部區域中之導電性粒子之捕捉數。
[實施例1之結果]
於使用評價用IC(1×20mm)之實施例1中，在第1排輸出凸塊排26-1中央部之輸出凸塊25之凹部區域上之粒子捕捉數為2個，凸部區域上之粒子捕捉數為17個，在第3排輸出凸塊排26-3中央部之輸出凸塊25之凹部區域上之粒子捕捉數為1個，凸部區域上之粒子捕捉數為16個。
於使用評價用IC(1.5×20mm)之實施例1中，在第1排輸出凸塊排26-1中央部之輸出凸塊25之凹部區域上之粒子捕捉數為3個，凸部區域上之粒子捕捉數為19個，在第3排輸出凸塊排26-3中央部之輸出凸塊25之凹部區域上之粒子捕捉數為1個，凸部區域上之粒子捕捉數為15 個。
於使用評價用IC(2×20mm)之實施例1中，在第1排輸出凸塊排26-1中央部之輸出凸塊25之凹部區域上之粒子捕捉數為3個，凸部區域上之粒子捕捉數為18個，在第3排輸出凸塊排26-3中央部之輸出凸塊25之凹部區域上之粒子捕捉數為2個，凸部區域上之粒子捕捉數為14個。
[實施例2之結果]
於使用評價用IC(1×20mm)之實施例2中，在第1排輸出凸塊排26-1中央部之輸出凸塊25之凹部區域上之粒子捕捉數為0個，凸部區域上之粒子捕捉數為4個，在第3排輸出凸塊排26-3中央部之輸出凸塊25之凹部區域上之粒子捕捉數為0個，凸部區域上之粒子捕捉數為3個。
於使用評價用IC(1.5×20mm)之實施例2中，在第1排輸出凸塊排26-1中央部之輸出凸塊25之凹部區域上之粒子捕捉數為0個，凸部區域上之粒子捕捉數為5個，在第3排輸出凸塊排26-3中央部之輸出凸塊25之凹部區域上之粒子捕捉數為1個，凸部區域上之粒子捕捉數為3個。
於使用評價用IC(2×20mm)之實施例2中，在第1排輸出凸塊排26-1中央部之輸出凸塊25之凹部區域上之粒子捕捉數為1個，凸部區域上之粒子捕捉數為4個，在第3排輸出凸塊排26-3中央部之輸出凸塊25之凹部區域上之粒子捕捉數為0個，凸部區域上之粒子捕捉數為3個。
[實施例3之結果]
於使用評價用IC(1×20mm)之實施例3中，在第1排輸出凸塊排26-1中央部之輸出凸塊25之凹部區域上之粒子捕捉數為4個，凸部區域上之粒子捕捉數為37個，在第3排輸出凸塊排26-3中央部之輸出凸塊25之凹部 區域上之粒子捕捉數為2個，凸部區域上之粒子捕捉數為36個。
於使用評價用IC(1.5×20mm)之實施例3中，在第1排輸出凸塊排26-1中央部之輸出凸塊25之凹部區域上之粒子捕捉數為3個，凸部區域上之粒子捕捉數為34個，在第3排輸出凸塊排26-3中央部之輸出凸塊25之凹部區域上之粒子捕捉數為3個，凸部區域上之粒子捕捉數為31個。
於使用評價用IC(2×20mm)之實施例3中，在第1排輸出凸塊排26-1中央部之輸出凸塊25之凹部區域上之粒子捕捉數為3個，凸部區域上之粒子捕捉數為35個，在第3排輸出凸塊排26-3中央部之輸出凸塊25之凹部區域上之粒子捕捉數為2個，凸部區域上之粒子捕捉數為30個。
[實施例4之結果]
於使用評價用IC(1×20mm)之實施例4中，在第1排輸出凸塊排26-1中央部之輸出凸塊25之凹部區域上之粒子捕捉數為2個，凸部區域上之粒子捕捉數為14個，在第3排輸出凸塊排26-3中央部之輸出凸塊25之凹部區域上之粒子捕捉數為1個，凸部區域上之粒子捕捉數為13個。
於使用評價用IC(1.5×20mm)之實施例4中，在第1排輸出凸塊排26-1中央部之輸出凸塊25之凹部區域上之粒子捕捉數為3個，凸部區域上之粒子捕捉數為15個，在第3排輸出凸塊排26-3中央部之輸出凸塊25之凹部區域上之粒子捕捉數為1個，凸部區域上之粒子捕捉數為11個。
於使用評價用IC(2×20mm)之實施例4中，在第1排輸出凸塊排26-1中央部之輸出凸塊25之凹部區域上之粒子捕捉數為2個，凸部 區域上之粒子捕捉數為15個，在第3排輸出凸塊排26-3中央部之輸出凸塊25之凹部區域上之粒子捕捉數為2個，凸部區域上之粒子捕捉數為10個。
[比較例1之結果]
於使用評價用IC(1×20mm)之比較例1中，在第1排輸出凸塊排26-1中央部之輸出凸塊25之凹部區域上之粒子捕捉數為2個，凸部區域上之粒子捕捉數為10個，在第3排輸出凸塊排26-3中央部之輸出凸塊25之凹部區域上之粒子捕捉數為1個，凸部區域上之粒子捕捉數為3個。
於使用評價用IC(1.5×20mm)之比較例1中，在第1排輸出凸塊排26-1中央部之輸出凸塊25之凹部區域上之粒子捕捉數為1個，凸部區域上之粒子捕捉數為11個，在第3排輸出凸塊排26-3中央部之輸出凸塊25之凹部區域上之粒子捕捉數為1個，凸部區域上之粒子捕捉數為1個。
於使用評價用IC(2×20mm)之比較例1中，在第1排輸出凸塊排26-1中央部之輸出凸塊25之凹部區域上之粒子捕捉數為2個，凸部區域上之粒子捕捉數為12個，在第3排輸出凸塊排26-3中央部之輸出凸塊25之凹部區域上之粒子捕捉數為0個，凸部區域上之粒子捕捉數為0個。
[第4實施例之考察]
如表4所示，根據使用導電性粒子規則排列之異向性導電膜所作成之實施例1~4之連接體樣本之任一者，在第1,3排輸出凸塊排26-1、26-3中央部之輸出凸塊25之凸部區域中均觀察到3個以上之壓痕，在第1排與第3排幾乎無差異，藉由導電性粒子之壓縮而具備良好導通性。其原因在於，在捕捉導電性粒子之凸塊面所形成之凹部區域中無法將導電性粒子充分地壓入時，由於藉由導電性粒子規則排列而亦被凸部區域所捕捉，因此在該 凸部區域係被充分地壓入所致。
是以，於實施例1~4中，在輸出端子21與輸出凸塊25之距離最容易展開之第3排輸出凸塊排26-3之中央部中，由於具有與第1排無大差異之壓痕及粒子捕捉數，因此在第2排或第3排之其他輸出凸塊25亦同樣地觀察到壓痕及粒子捕捉數，可想見可藉由導電性粒子之壓縮而具有良好之導電性。又，根據實施例1~4之連接體樣本，由於在第3排輸出凸塊排26-3中央亦被壓入導電性粒子，因此亦能清楚地確認出現於評價用玻璃基板12背面之導電性粒子之壓痕，而亦能以良好精度透過壓痕進行導通性之確認。
另一方面，於比較例1中，亦存在在第1,3排之輸出凸塊排26-1、26-3中央部之輸出凸塊25之凸部區域中壓痕未被觀察到之凸塊，而會擔心因導電性粒子之壓入不足導致導通性降低。此係因導電性粒子係隨機地分散，因此會使被凸部區域捕捉之粒子數產生不均所致。是以，比較例1中，導電性粒子不會在凸部區域上，而在機率上無法避免導通性或導通可靠性低之凸塊之產生。
12‧‧‧透明基板
18‧‧‧液晶驅動用IC
19‧‧‧輸入端子
21‧‧‧輸出端子
23‧‧‧輸入凸塊
25‧‧‧輸出凸塊
26-1~26-3‧‧‧輸出凸塊排

Claims (15)

  1. 一種連接體，其具備：電路基板，排列有複數個端子之端子排在與上述端子之排列方向正交之寬度方向並列複數排；以及電子零件，對應上述複數排端子排，排列有複數個凸塊之凸塊排在與上述凸塊之排列方向正交之寬度方向並列複數排；透過排列有導電性粒子之異向性導電接著劑於上述電路基板上連接有上述電子零件；其特徵在於：排列於上述電路基板及上述電子零件之各外側之相對向的端子與凸塊的距離，較排列於上述電路基板及上述電子零件之各內側之相對向的端子與凸塊的距離大。
  2. 如申請專利範圍第1項之連接體，其中，排列於上述電路基板及上述電子零件之各外側之相對向的端子與凸塊的距離，在排列於上述電路基板及上述電子零件之各內側之相對向的端子與凸塊的距離之130%以內。
  3. 如申請專利範圍第2項之連接體，其中，於上述電子零件之上述凸塊排之中心部，排列於上述電路基板及上述電子零件之各外側之相對向的端子與凸塊的距離，在排列於上述電路基板及上述電子零件之各內側之相對向的端子與凸塊的距離之130%以內。
  4. 如申請專利範圍第1至3項中任一項之連接體，其中， 排列於上述電路基板及上述電子零件之各外側之相對向的端子與凸塊的距離Do，與排列於上述電路基板及上述電子零件之各內側之相對向的端子與凸塊的距離Di之比例D(=Do/Di)，係在上述電子零件之上述凸塊之排列方向兩端之排列於上述電路基板及上述電子零件之各外側之相對向的端子與凸塊的平均距離do，與排列於上述電路基板及上述電子零件之各內側之相對向的端子與凸塊的平均距離di之比例d(=dO/di)的130%以內。
  5. 如申請專利範圍第4項之連接體，其中，在上述電子零件之上述凸塊排之中心部之上述比例D係上述比例d之130%以內。
  6. 如申請專利範圍第1至5項中任一項之連接體，其中，上述電路基板，具有形成有一上述端子排之第1端子區域、與在寬度方向並列複數排上述端子排之第2端子區域；上述電子零件，具有形成有一上述凸塊排之第1凸塊區域、與在寬度方向並列複數排上述凸塊排之第2凸塊區域；於上述電路基板及上述電子零件之上述第2端子區域及上述第2凸塊區域，排列於各外側之相對向之端子與凸塊之距離Do，係在排列於上述電路基板及上述電子零件之上述第2端子區域及上述第2凸塊區域中之各外側之端子排與凸塊排兩端部中相對向之端子與凸塊的距離、與排列於上述電路基板及上述電子零件之上述第1端子區域及上述第1凸塊區域中之上述端子排與凸塊排兩端部中相對向之端子與凸塊的距離之平均距離dAVE的110%以內。
  7. 如申請專利範圍第6項之連接體，其中，在上述第1端子區域及上述第1凸塊區域中之上述端子排與凸塊排，在於上述第1端子區域在與上述端子之排列方向正交之寬度方向並列有複數排上述端子排、且於上述第1凸塊區域在與上述凸塊排之排列方向正交之寬度方向並列有複數排上述凸塊排時，係排列於上述第1端子區域及上述第1凸塊區域中之各外側的端子排及凸塊排。
  8. 如申請專利範圍第6項之連接體，其中，在上述電子零件之上述凸塊排之中心部之上述比例Do係上述平均距離dAVE之110%以內。
  9. 如申請專利範圍第1至3項中任一項之連接體，其係使用排列有上述導電性粒子之上述異向性導電接著劑形成。
  10. 如申請專利範圍第1至3項中任一項之連接體，其中，上述導電性粒子之平均粒子徑為5μm以下。
  11. 如申請專利範圍第1至3項中任一項之連接體，其中，上述凸塊於捕捉上述導電性粒子之凸塊面，形成有具有上述導電性粒子之粒子徑之50%以內之高低差的凹凸部。
  12. 如申請專利範圍第4或5項之連接體，其中，上述凸塊於捕捉上述導電性粒子之凸塊面，形成有具有上述導電性粒子之粒子徑之50%以內之高低差的凹凸部。
  13. 如申請專利範圍第6至8項中任一項之連接體，其中，上述凸塊於捕捉上述導電性粒子之凸塊面，形成有具有上述導電性粒子之粒子徑之50%以內之高低差的凹凸部。
  14. 一種連接體之製造方法，該連接體具備：電路基板，排列有複數個端子之端子排在寬度方向並列複數排；以及電子零件，對應上述複數排端子排，排列有複數個凸塊之凸塊排在寬度方向並列複數排；其經由排列有導電性粒子之異向性導電接著劑而於上述電路基板上搭載上述電子零件；按壓上述電子零件且使上述異向性導電接著劑硬化而成，其特徵在於：排列於上述電路基板及上述電子零件之各外側之相對向的端子與凸塊的距離，較排列於上述電路基板及上述電子零件之各內側之相對向的端子與凸塊的距離大。
  15. 如申請專利範圍第14項之連接體之製造方法，其中，上述異向性導電接著劑，具備含有上述導電性粒子之導電性粒子含有層與不含有上述導電性粒子之絕緣性接著劑層，上述導電性粒子含有層黏度較上述絕緣性接著劑層高。
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