TW201614226A - X-ray thin film inspection apparatus - Google Patents

X-ray thin film inspection apparatus

Info

Publication number
TW201614226A
TW201614226A TW104120714A TW104120714A TW201614226A TW 201614226 A TW201614226 A TW 201614226A TW 104120714 A TW104120714 A TW 104120714A TW 104120714 A TW104120714 A TW 104120714A TW 201614226 A TW201614226 A TW 201614226A
Authority
TW
Taiwan
Prior art keywords
ray
rays
convergent
thin film
inspection apparatus
Prior art date
Application number
TW104120714A
Other languages
English (en)
Other versions
TWI630384B (zh
Inventor
Kiyoshi Ogata
Sei YOSHIHARA
Takao Kinefuchi
Shiro Umegaki
Shigematsu Asano
Katsutaka HORADA
Muneo Yoshida
Hiroshi Motono
Hideaki Takahashi
Akifusa HIGUCHI
Kazuhiko Omote
Yoshiyasu Ito
Naoki Kawahara
Asao Nakano
Original Assignee
Rigaku Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rigaku Denki Co Ltd filed Critical Rigaku Denki Co Ltd
Publication of TW201614226A publication Critical patent/TW201614226A/zh
Application granted granted Critical
Publication of TWI630384B publication Critical patent/TWI630384B/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/203—Measuring back scattering
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/2204—Specimen supports therefor; Sample conveying means therefore
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/2206—Combination of two or more measurements, at least one measurement being that of secondary emission, e.g. combination of secondary electron [SE] measurement and back-scattered electron [BSE] measurement
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/223—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/07—Investigating materials by wave or particle radiation secondary emission
    • G01N2223/076—X-ray fluorescence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/30—Accessories, mechanical or electrical features
    • G01N2223/315—Accessories, mechanical or electrical features monochromators
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/61—Specific applications or type of materials thin films, coatings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
TW104120714A 2014-10-14 2015-06-26 Ｘ射線薄膜檢查裝置 TWI630384B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
??PCT/JP2014/077335 2014-10-14
PCT/JP2014/077335 WO2016059672A1 (ja) 2014-10-14 2014-10-14 Ｘ線薄膜検査装置

Publications (2)

Publication Number Publication Date
TW201614226A true TW201614226A (en) 2016-04-16
TWI630384B TWI630384B (zh) 2018-07-21

Family

ID=55746243

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104120714A TWI630384B (zh) 2014-10-14 2015-06-26 Ｘ射線薄膜檢查裝置

Country Status (5)

Country Link
US (1) US10473598B2 (zh)
JP (1) JP6351740B2 (zh)
KR (1) KR102144281B1 (zh)
TW (1) TWI630384B (zh)
WO (1) WO2016059672A1 (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109416330A (zh) * 2016-07-16 2019-03-01 株式会社理学 混合检查系统
TWI755409B (zh) * 2016-07-15 2022-02-21 日商理學股份有限公司 Ｘ射線檢查裝置、ｘ射線薄膜檢查方法及搖擺曲線測定方法
TWI758201B (zh) * 2016-10-21 2022-03-11 美商克萊譚克公司 基於小角度x射線散射量測之計量系統之校準
TWI805631B (zh) * 2017-10-26 2023-06-21 中國大陸商深圳幀觀德芯科技有限公司 用於x射線螢光的檢測器

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190071111A (ko) * 2017-12-14 2019-06-24 삼성전자주식회사 엑스선 검사 장비 및 이를 이용하는 반도체 장치 제조 방법
WO2019130663A1 (ja) * 2017-12-28 2019-07-04 株式会社リガク Ｘ線検査装置
US11592407B2 (en) * 2018-05-18 2023-02-28 Enersoft Inc. Systems, devices, and methods for x-ray fluorescence analysis of geological samples
JP7394464B2 (ja) * 2018-07-04 2023-12-08 株式会社リガク 蛍光ｘ線分析装置
CN112823280A (zh) 2018-09-07 2021-05-18 斯格瑞公司 用于深度可选x射线分析的系统和方法
CN109839396B (zh) * 2019-01-23 2021-03-19 中国科学院上海应用物理研究所 一种基于kb镜聚焦的同步辐射共聚焦荧光实验方法
JP7210065B2 (ja) * 2019-03-28 2023-01-23 株式会社リガク 透過型小角散乱装置
KR102621750B1 (ko) * 2019-06-24 2024-01-05 에스엠에스 그룹 게엠베하 다결정 제품의 소재 특성 측정 장치 및 방법
US11143605B2 (en) * 2019-09-03 2021-10-12 Sigray, Inc. System and method for computed laminography x-ray fluorescence imaging
BR112022004337A2 (pt) * 2019-09-09 2022-08-23 Univ La Frontera Sistema integral de fontes de ortovoltagem que induzem radiação ionizante
US11175243B1 (en) 2020-02-06 2021-11-16 Sigray, Inc. X-ray dark-field in-line inspection for semiconductor samples
CN115427802A (zh) * 2020-05-14 2022-12-02 株式会社岛津制作所 质量分析方法及质量分析装置
CN115667896B (zh) 2020-05-18 2024-06-21 斯格瑞公司 使用晶体分析器和多个检测元件的x射线吸收光谱的系统和方法
CN114166874A (zh) * 2020-09-11 2022-03-11 同方威视技术股份有限公司 背散射检查系统和方法
WO2022061347A1 (en) 2020-09-17 2022-03-24 Sigray, Inc. System and method using x-rays for depth-resolving metrology and analysis
CN112268914B (zh) * 2020-12-07 2021-04-30 西安稀有金属材料研究院有限公司 一种全尺寸核燃料包壳管元件耐事故涂层的无损检测方法
KR20230109735A (ko) 2020-12-07 2023-07-20 시그레이, 아이엔씨. 투과 x-선 소스를 이용한 고처리량 3D x-선 이미징 시스템
EP4019951A1 (en) 2020-12-24 2022-06-29 Inel S.A.S Apparatuses and methods for combined simultaneous analyses of materials
US11992350B2 (en) 2022-03-15 2024-05-28 Sigray, Inc. System and method for compact laminography utilizing microfocus transmission x-ray source and variable magnification x-ray detector
WO2023215204A1 (en) 2022-05-02 2023-11-09 Sigray, Inc. X-ray sequential array wavelength dispersive spectrometer

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0915392A (ja) * 1995-06-28 1997-01-17 Hitachi Ltd Ｘ線解析装置
JPH09218170A (ja) 1996-02-14 1997-08-19 Rigaku Corp Ｘ線回折測定方法
JPH102998A (ja) * 1996-06-18 1998-01-06 Rigaku Corp Ｘ線回折装置のスリット装置
JP3912606B2 (ja) 2004-10-26 2007-05-09 株式会社リガク Ｘ線薄膜検査装置と、プロダクトウエーハの薄膜検査装置およびその方法
WO2007072906A1 (ja) * 2005-12-21 2007-06-28 Kyoto University 曲率分布結晶レンズの製造方法、偏光制御装置、ｘ線反射率測定装置およびｘ線反射率測定方法
JP5695589B2 (ja) * 2012-03-02 2015-04-08 株式会社リガク Ｘ線強度補正方法およびｘ線回折装置
JP6026936B2 (ja) * 2013-03-28 2016-11-16 株式会社日立ハイテクサイエンス 異物検出装置
JP6351741B2 (ja) * 2014-10-14 2018-07-04 株式会社リガク Ｘ線薄膜検査装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI755409B (zh) * 2016-07-15 2022-02-21 日商理學股份有限公司 Ｘ射線檢查裝置、ｘ射線薄膜檢查方法及搖擺曲線測定方法
CN109416330A (zh) * 2016-07-16 2019-03-01 株式会社理学 混合检查系统
CN109416330B (zh) * 2016-07-16 2022-09-27 株式会社理学 混合检查系统
TWI758201B (zh) * 2016-10-21 2022-03-11 美商克萊譚克公司 基於小角度x射線散射量測之計量系統之校準
TWI805631B (zh) * 2017-10-26 2023-06-21 中國大陸商深圳幀觀德芯科技有限公司 用於x射線螢光的檢測器
US11714204B2 (en) 2017-10-26 2023-08-01 Shenzhen Xpectvision Technology Co., Ltd. Detector for X-ray fluorescence

Also Published As

Publication number Publication date
KR20170070163A (ko) 2017-06-21
US10473598B2 (en) 2019-11-12
TWI630384B (zh) 2018-07-21
JP6351740B2 (ja) 2018-07-04
WO2016059672A1 (ja) 2016-04-21
JPWO2016059672A1 (ja) 2017-08-17
KR102144281B1 (ko) 2020-08-13
US20170234814A1 (en) 2017-08-17

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