TW201606959A - 半導體結構及其製造方法 - Google Patents

半導體結構及其製造方法 Download PDF

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TW201606959A
TW201606959A TW104125543A TW104125543A TW201606959A TW 201606959 A TW201606959 A TW 201606959A TW 104125543 A TW104125543 A TW 104125543A TW 104125543 A TW104125543 A TW 104125543A TW 201606959 A TW201606959 A TW 201606959A
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substrate
support
bumps
elongated
semiconductor
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TW104125543A
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TWI616991B (zh
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林彥良
李明機
郭庭豪
陳承先
陳玉芬
吳勝郁
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台灣積體電路製造股份有限公司
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Abstract

本揭露提供一種半導體封裝件，其包括半導體晶粒和基板，該基板具有電耦合至該半導體晶粒的第一表面以及與該第一表面相對的第二表面。該第一表面包括具有複數個支撐墊的中心區以及圍繞該中心區並具有複數個支撐跡線的周邊區。該支撐墊的間距為約55μm至約280μm。該半導體晶粒包括朝向該基板的該第一表面的第三表面以及與該第三表面相對的第四表面。該第三表面包括複數個伸長凸塊，其放置在對應於該基板的該支撐墊和該支撐跡線的位置，並且該伸長凸塊包括長軸以及在其剖面垂直於該長軸的短軸。

Description

半導體結構及其製造方法
本揭露涉及半導體結構及其製造方法。
隨著設備尺寸持續下降，在積體電路的端子之間的間距也降低。例如：相鄰凸塊的橋接可能造成電氣短路。並且，焊料凸塊由機械變形引起，因此裝配完成的覆晶基板中凸塊高度可能是非一致的，經過重熔和回焊處理後，最終凸塊之間的距離也可能不相等。而且，在某些細間距器件中使用具有焊料凸塊的底部填充膠(underfills，UF)可能在UF材料中留下空隙，產生諸如開裂和熱點等另外的問題。
更細間距器件的方案是利用帶焊料(特別是無鉛焊料)帽的銅柱或者其他導電柱代替焊料凸塊。除了銅(Cu)以外，可以採用諸如鎳(Ni)、金(Au)、鈀(Pd)等其他導電材料，還可以使用這些金屬的合金等。這些的導電柱形成一種名為“銅柱凸塊”的連接器類型。銅柱凸塊也可以包括銅合金和其他含銅導體，或者柱凸塊可以由其他導電材料組成。這些柱凸塊的優點為在回焊期間柱體完全不變形。當焊料帽形成在熱回焊期間熔化的球狀頂端時，圓柱形柱體趨於維持自身的形狀。銅柱比先前使用的焊料凸塊的熱導性更好，加強熱傳遞。窄柱體可在比先前用焊料凸塊可能達到的細間距陣列更加細小的細間距陣列中使用，而不會引起橋接短路和其他諸如非一致凸塊高 度的問題。隨著積體電路設備尺寸持續縮小，端子之間的間距和相應的柱凸塊間的間距也將持續減小。隨著端子之間間距的持續減小，預期在使用柱凸塊中觀察到的熱應力相關的問題可能增加。
本揭露的一些實施例提供一種半導體封裝件，其包括半導體晶粒和基板，該基板具有電耦合至該半導體晶粒的第一表面以及與該第一表面相對的第二表面。該第一表面包括具有複數個支撐墊的中心區以及圍繞該中心區並具有複數個支撐跡線的周邊區。該支撐墊的間距為約55μm至約280μm。
在一些實施例中，該半導體晶粒包括朝向該基板的該第一表面的第三表面以及與該第三表面相對的第四表面。該第三表面包括複數個伸長凸塊，其放置在對應於該基板的該支撐墊和該支撐跡線的位置，並且該伸長凸塊包括長軸以及在其剖面垂直於該長軸的短軸。
在一些實施例中，對應地放置在該第一表面的該中心區的該伸長凸塊的間距為約55μm至約280μm。
在一些實施例中，該第一表面的該周邊區具有約6倍于該中心區的該支撐墊的最小間距的寬度。
在一些實施例中，對應地放置在該中心區的該支撐墊的該伸長凸塊包括約4000ea/9*9mm2至約4500ea/9*9mm2的I/O計數密度。
在一些實施例中，該伸長凸塊的該長軸指向不同方向。
在一些實施例中，該半導體晶粒的該第三表面是有源表面。
在一些實施例中，該第二表面包括外部端子。
本揭露的一些實施例提供一種半導體覆晶封裝件，其包括具有複數個伸長凸塊的半導體晶粒以及基板，其具有對應於該複數個伸長凸塊放置的複數個支撐墊和支撐跡線。該基板包括中心區，其上具有 該支撐墊，以及周邊區，其上具有該支撐跡線。該支撐墊大體為圓形。
在一些實施例中，該支撐墊的間距為約55μm至約280μm。
在一些實施例中，該基板是半加成工藝基板、嵌入式圖案電鍍基板或其組合。
在一些實施例中，該半導體封裝件還包括該半加成工藝基板、該嵌入式圖案電鍍基板或其組合的支撐墊或支援跡線上的金屬墊。
在一些實施例中，該周邊區包括約6倍于該中心區的該支撐墊的最小間距的寬度。
在一些實施例中，該半導體封裝件還包括該支撐墊和該伸長凸塊之間的焊料。
在一些實施例中，位於對應於該伸長凸塊放置的支撐墊或支撐跡線下的該基板中的導電佈線包括通路結構。
本揭露的一些實施例提供一種製造半導體封裝件的方法，其包括：(i)在基板的中心區形成複數個支撐墊，該支撐墊的間距為約55μm至約280μm；(ii)在半導體晶粒的有源表面上形成複數個伸長凸塊，該伸長凸塊的形成對應於該基板的該中心區上的該複數個支撐墊；以及(iii)將該支撐墊和該伸長凸塊電耦合。
在一些實施例中，形成該複數個支撐墊包括在該基板的該中心區形成直徑小於120μm的複數個圓形支撐墊。
在一些實施例中，形成該複數個伸長凸塊包括形成複數個具有長軸以及在其剖面與該長軸垂直的短軸的伸長凸塊，其中，該長軸之佈置為具有不同方向。
在一些實施例中，製造半導體封裝件的方法還包括形成複數個金屬墊，其對應地放置在該基板的該中心區的該支撐墊上。
在一些實施例中，將該支撐墊和該伸長凸塊電耦合包括在該半 導體晶粒的該伸長凸塊上施用焊接材料並回焊該焊接材料。
10‧‧‧半導體封裝件
101‧‧‧半導體晶粒
1011‧‧‧導電凸塊
1011A‧‧‧長軸
1011B‧‧‧短軸
1013‧‧‧第三表面
1014‧‧‧第四表面
103‧‧‧基板
1031‧‧‧第一表面
1032‧‧‧第二表面
1033‧‧‧支撐墊
1033’‧‧‧金屬墊
1035‧‧‧支撐跡線
1036‧‧‧金屬化層
1037‧‧‧中心層
1038‧‧‧介電層
1039‧‧‧抗焊劑層
1039’‧‧‧抗焊劑開口
103A‧‧‧中心區
103B‧‧‧周邊區
105‧‧‧金屬化層
105’‧‧‧球支撐
107‧‧‧焊球
109‧‧‧焊料
120‧‧‧通路結構
140‧‧‧掩膜層
141‧‧‧開口
500‧‧‧原點
501‧‧‧區域
502‧‧‧區域
503‧‧‧區域
504‧‧‧區域
AA‧‧‧線
BB‧‧‧線
D‧‧‧直徑
P‧‧‧間隔
P’‧‧‧間距
W‧‧‧寬度
當閱讀隨附的附圖時，從以下詳細的描述可以最清楚地理解本發明的各個方面。需要強調的是，根據本行業的標準做法，不是按比例繪製各個特徵。事實上，各個特徵的尺寸可以任意增大或減小以便進行清楚的討論。
圖1示出了根據本揭露一些實施例的半導體封裝件的剖面圖。
圖2示出了根據本揭露一些實施例的半導體封裝件的俯視圖。
圖3示出了根據本揭露一些實施例的半導體封裝件基板的俯視圖。
圖4示出了根據本揭露一些實施例的半導體封裝件中半導體晶粒的有源表面。
圖5示出了根據本揭露一些實施例的基板上支撐墊、凸塊跡線以及半導體晶粒上延長凸塊的相應位置的俯視圖。
圖6A示出了根據本揭露一些實施例的支撐墊以及支撐墊上伸長凸塊蹤跡的俯視圖。
圖6B示出了根據本揭露一些實施例的支撐墊以及支撐墊上伸長凸塊的透視圖。
圖7A示出了根據本揭露一些實施例的支撐墊以及支撐墊上伸長凸塊蹤跡的俯視圖。
圖7B示出了根據本揭露一些實施例的支撐墊以及支撐墊上伸長凸塊的透視圖。
圖8示出了根據本揭露一些實施例的半導體覆晶封裝件的剖面圖。
圖9示出了根據本揭露一些實施例的半導體覆晶封裝件的剖面 圖。
圖10示出了根據本揭露一些實施例的半導體覆晶封裝件的剖面圖。
圖11示出了根據本揭露一些實施例的半導體覆晶封裝件的剖面圖。
圖12至圖16是根據本揭露一些實施例的製造半導體封裝件方法的片段示圖。
如下公開提供了很多不同的實施例或示例，用於實施所提供的主題的不同特徵。如下描述了元件和佈置的具體示例，以簡化本發明。當然，它們僅僅是示例，並不是旨在限制本發明。例如，以下描述中在第二特徵之上或在第二特徵上形成第一特徵可以包括形成直接接觸的第一特徵和第二特徵的實施例，還可以包括在第一特徵和第二特徵之間可以形成附加特徵從而使得第一特徵和第二特徵可以不直接接觸的實施例。此外，本公開可以在各個示例中重複使用符號和/或字母。這種重複使用用於簡化和清楚的目的，其本身並不表明所述的各個實施例和/或配置之間的關係。
而且，空間關係術語，例如“之下”、“下方”、“下面”、“之上”、“上方”等，在此用於簡化描述附圖所示的一個單元或特徵對另一個單元或特徵的關係。除了附圖中描寫的方向，空間關係術語旨在包含使用或操作的裝置的不同方向。設備可以以其他方式定向(旋轉90度或者在其他方向)，並可以據此同樣地解釋本文所使用的空間關係描述語。
隨著高級設器件裝對更細間距的需求，傳統的墊佈局上的凸塊由於基礎佈局的限制不能達到理想細的間距。例如，半導體晶粒上的 銅凸塊或任何導電凸塊被設計為圓形，而在半導體晶粒基板的周邊區域導電跡線為條帶圖案，其中每一條帶的寬度窄於圓形凸塊的直徑。為了適應圓形導電凸塊和避免橋接的發生，在不考慮圓形凸塊尺寸時，相鄰導電跡線之間的分離不能減少。又如，在半導體晶粒基板中心區的導電佈局被設計為包括導電跡線和導電墊。導電跡線與導電墊(通常具有比導電跡線更寬的圓形幾何接收面)佈線混合模式固有地限制半導體晶粒上的佈局和導電凸塊的密度。
半導體晶粒基板中心區的導電佈局傳統上被設計為包括導電跡線和導電墊，或者包括不同寬度的導電跡線(以下稱為“混合模式佈局”)。較寬的導電跡線可作為支撐跡線(landing trace)，用於接納半導體晶粒的導電凸塊。較窄的導電跡線可作為通行跡線，不用接納導電凸塊。不論導電凸塊的幾何形狀如何，對應於半基板中心區的半導體晶粒上導電凸塊的I/O計數密度約為1100ea/9*9mm2，這不滿足高級器件封裝件對細間距的需求。而且，在混合模式佈局方案下，從導電凸塊支撐點到(從晶粒側到電路板側延伸的)貫穿孔連接的距離標稱為250μm。混合模式佈局方案中的擴展佈線路徑可能是造成高級器件封裝件中RC延遲問題的原因之一。
本揭露提供一種由設計規則設計的半導體封裝結構，該規則能夠將對應基板中心區的導電凸塊的I/O計數密度從約1100ea/9*9mm2增加至約4400ea/9*9mm2。在一些實施例中，線路路徑被有效減少，因此可以期待更好的RC延遲性能。更大的導電凸塊的I/O計數密度能夠減小半導體晶粒和基板之間CTE錯配的影響。更大的I/O計數密度可以減小施加於每個導電凸塊上的CTE錯配應力。
參照圖1，圖1為根據本揭露一些實施例的半導體封裝件10的剖面圖。為簡單起見，圖1中僅示出該半導體封裝件10的一部分。半導體封裝件10包括半導體晶粒101、基板103，基板103具有朝向半導體 晶粒101的第一表面1031和背向半導體晶粒101的第二表面1032。第一表面1031包括中心區103A和周邊區103B。如圖1所示，第一表面1031在中心區103A擁有複數個支撐墊1033(僅示出兩個)，第一表面1031在周邊區103B擁有複數個支撐跡線1035(僅示出一個)。中心區103A中兩個相鄰的支撐墊1033之間的間隔P為約55μm至約280μm。這裡所述的支撐墊是指諸如圓形墊或多邊形墊等離散幾何形狀的導電墊。這裡所述的支撐跡線是指為導電路徑佈線和導電凸塊接納而設計的帶狀圖案。在一些實施例中，周邊區103B可包括支撐墊和支撐跡線。此外，半導體晶粒101包括朝向基板103的第三表面1013和背向基板103的第四表面1014。複數個導電凸塊1011位於第三表面1013上，並與基板103的第一表面1031上的支撐墊1033和支撐跡線1035電連接。在一些實施例中，第三表面1013是半導體晶粒101的有源表面。
在一些實施例中，依據設計需求，半導體晶粒101可以包括各種現有技術中已知的摻雜區(例如：p-型阱或n-型阱)。摻雜區使用諸如硼或BF2的p-型摻雜劑、諸如磷或砷的n-型摻雜物或者它們的組合進行摻雜。摻雜區可以是P-阱結構、N-阱結構、雙-阱結構、或凸起結構。半導體晶粒101還可包括各種有源區，例如，為N-型金屬氧化物半導體(N-type metal-oxide-semiconductor，NMOS)電晶體器件配置的區域，以及為P-型金屬氧化物半導體(P-type metal-oxide-semiconductor，PMOS)電晶體器件配置的區域。半導體晶粒101還可包括複數個隔離特徵(未示出)，例如淺溝隔離(shallow trench isolation,STI)特徵或矽局部氧化(local oxidation of silicon,LOCOS)特徵。隔離特徵可以限定和隔離各種微電子元件。可以在半導體晶粒101上形成的各種微電子元件的例子包括電晶體(例如，金屬氧化物半導體場效應電晶體(metal oxide semiconductor field effect transistors,MOSFET)、互補金屬氧化物半導體 (complementary metal oxide semiconductor,CMOS)電晶體、雙極接面電晶體(bipolar junction transistors,BJT)、高壓電晶體、高頻電晶體、p-溝道和/或n-溝道場效應電晶體(p-channel and/or n-channel field effect transistors，PFET/NFET)等)、電阻、二極體、電容、電感、熔線以及其他合適的元件。執行各種處理以形成各種微電子元件，這些處理包括沉積、蝕刻、植入、光刻、退火和其他合適的處理。將微電子元件互連以形成積體電路器件，例如，邏輯器件、存儲器件(例如，SRAM)、RF器件、輸入/輸出(I/O)器件、系統晶片(system-on-chip,SoC)器件、它們的組合以及其他合適的器件類型。
在一些實施例中，可以使用具有貫穿孔的中心層1037形成基板103，該貫穿孔鍍有諸如銅及其合金的導體或者鍍有其他導電金屬及其合金。然後，貫穿孔填充導電栓(conductive plug)或其他填充材料。顯示介電層1038(其可以是加成增層膜、含環氧基的介電質或其他絕緣體)覆蓋中心層1037的兩側。多級金屬化層105在豎直方向上形成導電路徑。在一些實施例中，焊料掩膜1039位於第二表面1032和第一表面1031上，第二表面1032包圍球支撐105’，其被配置為接納諸如焊球107的外部端子以製造封裝積體電路的外部連接器，第一表面1031包圍支撐墊1033(圖1未示出)。
圖2示出了根據本揭露一些實施例的半導體封裝件的俯視圖。圖2示出了半導體覆晶封裝件，其中導電凸塊和包含鉛或無鉛焊料成分的焊料與半導體晶粒101中的積體電路一起安裝，晶粒101向下朝向基板103，並且採用熱回焊工藝完成焊接。半導體晶粒101中的這些積體電路器件可以具有數十或數百個輸入和輸出端，用於接收以及發送信號和/或用於耦合至電源連接。在本揭露一些實施例所描述的覆晶封裝件中，基板103可以有或可以沒有圖1所示的中心層1037。基板103 結構的細節描述在本揭露的圖8至圖11中。基板103中的介電層可以由包括聚醯亞胺、有機物、無機物、樹脂、環氧樹脂等絕緣材料形成。
參照圖2和圖3，圖2僅示出位於基板103上半導體晶粒101的背面。基板103周邊區中第一表面1031的周圍部分沒有被半導體晶粒101覆蓋，可以看到第一表面1031上支撐跡線1035的部分。在圖3中，為了顯示基板103的第一表面1031上支撐墊1033和支撐跡線1035的佈局，將半導體晶粒101移除。參照圖1和圖3，中心區103A被周邊區103B包圍。在一些實施例中，周邊區103B被定義具有寬度W，其約為中心區103A的支撐墊1033的最小間距P的6倍。例如，如圖3所示，相鄰支撐墊1033之間的間距P的範圍從約55μm至約280μm，而周邊區103B的寬闊W的寬度範圍從約600μm至約900μm。
參照圖4，圖4示出了根據本揭露一些實施例的半導體封裝件中半導體晶粒的有源表面。在圖4中，虛線所示的複數個導電凸塊1011位於半導體晶粒101的第三表面1013或有源表面上。在一些實施例中，將半導體晶粒101的中心部分處的導電凸塊1011放置在對應於基板103的第一表面1031上的支撐墊1033的位置；將半導體晶粒101的周邊部分的導電凸塊1011放置在對應於基板103的第一表面1031上的支撐跡線1035的位置。注意，導電凸塊1011具有伸長的形狀，而不是傳統的圓形形狀。導電凸塊的伸長形狀進一步描述在圖6A和圖7A中。在本揭露中，導電凸塊1011被命名為伸長凸塊1011。伸長凸塊1011具有比對應圓形凸塊更窄的短軸，因此支撐跡線1035和支撐墊1033的佈局能夠被設計成具有更大的圖案密度。如圖4所示，對應於第一表面1031的中心區(此後稱為“對應中心區”)的伸長凸塊1011的間距P’的範圍從約55μm至約280μm，並且在一些實施例中，在對應中心區的伸長凸塊1011顯示約4000ea/9*9mm2至約4500ea/9*9mm2的I/O計數密度。由於在第一表面1031的中心區103A上僅僅形成離散圖案而不是 混合圖案(即，包括離散圖案和佈線圖案)，伸長凸塊1011的凸塊密度可以增加4倍。
參照圖5，圖5示出了圖3中第一表面1031上的支撐墊1033和支撐跡線1035的疊加，以及圖4，伸長凸塊1011位於對應於第一表面1031的導電圖案的位置。在圖5中，對應中心區的伸長凸塊1011被佈置為其長軸對準不同的方向。換句話說，伸長凸塊1011的長軸朝向不同的方向。在圖5所示的一些實施例中，伸長凸塊1011的長軸被佈置為指向相對於伸長凸塊1011圖案的原點500的徑向。為了簡便起見，區域501和503可以擁有相同方向的伸長凸塊1011；而區域502和504可以擁有相同方向的伸長凸塊1011。但是，伸長凸塊1011的佈置並不限於圖5所示的實施例，其他能夠促進施加在半導體晶粒上的接合應力的均勻分佈的佈置也在本揭露的考慮範圍。
圖6A示出了支撐墊1033以及支撐墊1033上伸長凸塊1011的蹤跡的俯視圖。伸長凸塊1011的蹤跡以虛線示出，表示伸長凸塊1011底部剖面的形狀。從伸長凸塊1011的蹤跡，可以識別長軸1011A和短軸1011B。在一些實施例中，長軸1011A和短軸1011B是相互正交的。伸長凸塊1011可以是卵形、橢圓形，或能夠識別長軸和短軸的其他幾何形狀。
圖6B示出了支撐墊1033和支撐墊1033上的伸長凸塊1011的透視圖。支撐墊1033和伸長凸塊1011通過焊料109電連接。需要注意的是，伸長凸塊1011可以是具有伸長蹤跡的圓錐體形狀。然而，伸長凸塊1011可以是在整個高度具有相同剖面的伸長圓柱體。在一些實施例中，支撐墊1033是在頂層層間介電層中形成的頂部金屬化層，其是導電路徑的一部分並具有必要時採用平坦化工藝(例如，化學機械拋光(chemical mechanical polishing,CMP))處理的暴露表面。支撐墊1033的合適材料包括但不限於，例如銅、鋁、銅合金或其他移動導電 材料，儘管它還可以由諸如銅、銀、金、鎳、鎢、它們的合金和/或多層的其他材料形成或包括這些材料。支撐墊1033的輪廓可以具有任何合適的階梯高度，從而獲得足夠的接合性能。
圖7A和圖7B中與圖6A和圖6B相同的數位標記指代相同物件或其等同物，為了簡單起見在此不再重複。比較圖6A、6B和圖7A、7B，額外的金屬墊1033’位於支撐墊1033和伸長凸塊1011之間。額外的金屬墊1033’可以具有合適的厚度以更好連接支撐墊1033和伸長凸塊1011。隨著工藝節點不斷縮小，以及隨著薄化晶圓以能夠(例如)使用貫穿矽通路(through silicon via,TSV)，晶粒彎曲的其他問題已經引起注意。額外的金屬墊1033’能夠用於防止冷焊(cold joint)，冷焊被認為是由晶粒彎曲衍生的製造問題。在一些實施例中，金屬墊1033’能夠具有依照伸長凸塊1011的伸長形狀。然而，金屬墊1033’的形狀並不限於此，其他能夠提供足夠高度和區域以接納焊料109和伸長凸塊1011的幾何形狀也在本揭露考慮的範圍內。
圖8至圖11示出了能夠在本揭露的半導體覆晶封裝件中實現的不同基板。圖8至圖11中與圖1相同的數位標記指代相同物件或其等同物，為了簡單起見在此不再重複。在圖8中，半加成工藝基板用作基板103，其中支撐墊1033位於第一表面1031上，與半導體晶粒101的有源表面上的伸長凸塊1011電耦合。在一些實施例中，複數個多級金屬化層1036水準地在介電層1038之間並側向地在兩個相鄰支撐墊1033和每個支撐墊1033下面的通路結構120之間形成。這裡所述的基板103的通路結構120指的是支撐架1033下的豎直導電路徑。支撐架1033下的金屬化佈局被設計形成連接支撐墊1033和外部端子107的最短導電路徑，因此能夠減少RC延遲問題。然而，鑒於其他設計限制，設計規則是為了減少連接支撐墊1033的導電路徑的總長度。在一些實施例中，通路結構120可以包括介電層的一者中的水準佈線跡線。
參照圖9，額外的金屬墊1033’位於半加成工藝基板的支撐墊1033上。在圖10中，嵌入式圖案電鍍基板用作基板103，其中支撐墊1033和支撐跡線1035嵌入第一表面1031下，但暴露支撐墊1033和支撐跡線1035的頂表面以接納半導體晶粒101的有源表面上的伸長凸塊1011。在圖10中，並列顯示基板的周邊區103B和中心區103A。通路結構120連接中心區103A中的支撐墊1033，而導電跡線佈線連接周邊區103B中的支撐跡線1035。在圖11中，額外的金屬墊1033’位於嵌入式圖案電鍍基板的支撐墊1033上。需要注意的是，圖8和圖9所示的半加成工藝基板中的中心層1037可以集成到圖10和圖11的嵌入式圖案電鍍基板。
圖12至圖16是根據本揭露一些實施例的製造半導體封裝件(例如，具有嵌入式圖案電鍍基板)方法的片段示圖。圖12是沿圖3的線AA剖開的剖面圖。在圖12中，形成複數個支撐墊1033並且從基板103的第一表面1031暴露。在一些實施例中，支撐墊1033形成為圓形表面，其直徑約為120μm和以下。所形成的支撐墊1033的最小間隔P的範圍從約55μm至約280μm。需要注意的是，先前討論的通路結構120在複數個介電層中形成，將支撐墊1033連接至外部端子(圖12未示出)。抗焊劑層1039在基板103的第二表面1032上形成，其具有複數個開口120以接納諸如焊球的外部端子。
圖13是沿圖4的線BB剖開的剖面圖。在圖13中，在半導體晶粒101的第三表面1013或有源表面上形成複數個伸長凸塊1011。在一些實施例中，使用合適的光刻和電鍍操作形成伸長凸塊1011。伸長凸塊1011可以包括任何合適的材料。在一些實施例中，伸長凸塊1011是金屬柱，可以由具有焊料濕潤度的導電材料形成。例如，如果伸長凸塊1011由銅形成，其指的是銅柱(或銅凸塊)。如圖13所示，伸長凸塊1011的蹤跡可以包括卵形或橢圓形。伸長凸塊1011的蹤跡具有圖6A 和圖7A所述的短軸1011B和長軸1011A。因為伸長凸塊1011在半導體晶粒101上的位置是根據支撐墊1033在基板1033的位置而佈置的，所以相鄰伸長凸塊1011之間的間距P’的範圍從約55μm至約280μm。如圖13所示，每一伸長凸塊1011的長軸1011A可以指向不同的方向。
參照圖14和圖15，在支撐墊1033的頂部形成額外的金屬墊1033’。在圖14中，在基板103的第一表面1031上形成掩膜層140，並在掩膜層140中形成複數個開口141，以暴露支撐墊1033的一部分。可以執行合適的電鍍或無電式電鍍操作，接著為平坦化操作以及剝離(lift off)操作來填充開口141。在圖15中，可以在支撐墊1033和金屬墊1033’上形成抗焊劑1039。抗焊劑開口1039’形成在接近待連接的半導體晶粒(未示出)的第一表面1031上。在一些實施例中，在抗焊劑1039上執行雷射鑽孔操作以形成抗焊開口1039’。在該非限制實施例中，可以在將預焊材料(未示出)佈置在金屬墊1033’上之前執行該雷射鑽孔操作。通過可選的中心層從金屬墊1033’至接近基板103的外部端子的電路板側形成連接。這些連接可以(例如)使用填充導電栓的電鍍通孔而形成。可以使用銅鍍技術形成基板的金屬化層，而可以在加成增層膜或另一介電質的層上無電式電鍍晶種層。
參照圖16，圖13所示的半導體晶粒(例如)通過焊接操作和回焊操作電耦合至圖15所示的處理的嵌入式圖案電鍍基板。焊接材料可以包括Sn、SnAg、SnPb、SnAgZn、SnZn、SnBiIn、SnIn、SnAu、SnPb、SnCu、SnZnIn或SnAgSb等。在一些實施例中，通過將積體電路晶粒101上的伸長凸塊1011與對應的支撐墊1033和金屬跡線1035對準而面朝下安裝覆晶積體電路晶粒101，從而使得焊料和預焊材料接觸。使用熱回焊執行晶片附接操作，焊接以及預焊材料融化然後冷卻，在回焊中它們在積體電路晶粒101和基板103之間形成電連接和機械連接。
前面所述概括了複數個實施例的特徵，使得本領域技術人員可更好地理解本發明的各個方面。本領域技術人員應該明白他們可以將本發明當作基礎，用來設計或修改用於執行相同目的和/或獲得在此介紹的實施例的相同好處的其他過程和結構。本領域技術人員也可意識到這樣等同的構造並不脫離本發明的精神和保護範圍，並且在不脫離本發明的精神和保護範圍的情況下，他們可以在此做各種改變、替換和修改。
10‧‧‧半導體封裝件
101‧‧‧半導體晶粒
1011‧‧‧導電凸塊
1013‧‧‧第三表面
1014‧‧‧第四表面
103‧‧‧基板
1031‧‧‧第一表面
1032‧‧‧第二表面
1033‧‧‧支撐墊
1035‧‧‧支撐跡線
1037‧‧‧中心層
1038‧‧‧介電層
1039‧‧‧抗焊劑層
103A‧‧‧中心區
103B‧‧‧周邊區
105‧‧‧金屬化層
105’‧‧‧球支撐
107‧‧‧焊球
P‧‧‧間隔

Claims (10)

  1. 一種半導體封裝件，其包括：半導體晶粒；以及基板，其具有電耦合至該半導體晶粒的第一表面以及與該第一表面相對的第二表面；其中，該第一表面包括：中心區，其具有複數個支撐墊；以及周邊區，其圍繞該中心區並具有複數個支撐跡線；以及其中，該支撐墊的間距為約55μm至約280μm。
  2. 如請求項1所述的半導體封裝件，其中，該半導體晶粒包括朝向該基板的該第一表面的第三表面以及與該第三表面相對的第四表面，該第三表面包括複數個伸長凸塊，其放置在對應於該基板的該支撐墊和該支撐跡線的位置，該伸長凸塊包括長軸以及在其剖面垂直於該長軸的短軸。
  3. 如請求項2所述的半導體封裝件，對應地放置在該第一表面的該中心區的該伸長凸塊的間距為約55μm至約280μm。
  4. 如請求項1所述的半導體封裝件，其中，該第一表面的該周邊區具有約6倍于該中心區的該支撐墊的最小間距的寬度。
  5. 如請求項2所述的半導體封裝件，其中，該伸長凸塊的該長軸指向不同方向。
  6. 一種半導體覆晶封裝件，其包括：半導體晶粒，其具有複數個伸長凸塊；以及基板，其具有對應於該複數個伸長凸塊放置的複數個支撐墊和支撐跡線，其包括：中心區，其上具有該支撐墊；以及周邊區，其上具有該支撐跡線；以及其中，該支撐墊大體為圓形。
  7. 如請求項6所述的半導體覆晶封裝件，其中，該基板是半加成工藝基板、嵌入式圖案電鍍基板或其組合。
  8. 一種製造半導體封裝件的方法，其包括：在基板的中心區形成複數個支撐墊，該支撐墊的間距為約55μm至約280μm；在半導體晶粒的有源表面上形成複數個伸長凸塊，該伸長凸塊的形成對應於該基板的該中心區上的該複數個支撐墊；以及將該支撐墊和該伸長凸塊電耦合。
  9. 如請求項8所述的方法，其中，形成該複數個支撐墊包括在該基板的該中心區形成直徑小於120μm的複數個圓形支撐墊。
  10. 如請求項8所述的方法，其中，形成該複數個伸長凸塊包括形成複數個具有長軸以及在其剖面與該長軸垂直的短軸的伸長凸塊，其中，該長軸之佈置具有不同方向。
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US9935073B2 (en) 2018-04-03
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