TW201604993A - 高深寬比結構的蝕刻方法及mems裝置的製作方法 - Google Patents
高深寬比結構的蝕刻方法及mems裝置的製作方法 Download PDFInfo
- Publication number
- TW201604993A TW201604993A TW104122756A TW104122756A TW201604993A TW 201604993 A TW201604993 A TW 201604993A TW 104122756 A TW104122756 A TW 104122756A TW 104122756 A TW104122756 A TW 104122756A TW 201604993 A TW201604993 A TW 201604993A
- Authority
- TW
- Taiwan
- Prior art keywords
- etching
- etch
- etching process
- high aspect
- semiconductor substrate
- Prior art date
Links
- 238000005530 etching Methods 0.000 title claims abstract description 278
- 238000000034 method Methods 0.000 title claims abstract description 188
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 101
- 239000004065 semiconductor Substances 0.000 claims abstract description 83
- 230000007704 transition Effects 0.000 claims abstract description 23
- 238000000151 deposition Methods 0.000 claims description 82
- 230000008021 deposition Effects 0.000 claims description 78
- 230000001052 transient effect Effects 0.000 claims description 16
- 239000011159 matrix material Substances 0.000 claims description 13
- 238000004026 adhesive bonding Methods 0.000 claims description 8
- 230000037237 body shape Effects 0.000 claims description 6
- 238000001514 detection method Methods 0.000 claims description 3
- 238000004891 communication Methods 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 40
- 238000005516 engineering process Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 6
- 238000000708 deep reactive-ion etching Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000036470 plasma concentration Effects 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Landscapes
- Micromachines (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410345037.8A CN105448697B (zh) | 2014-07-18 | 2014-07-18 | 高深宽比结构的刻蚀方法及mems器件的制作方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201604993A true TW201604993A (zh) | 2016-02-01 |
| TWI560807B TWI560807B (https=) | 2016-12-01 |
Family
ID=55558755
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104122756A TW201604993A (zh) | 2014-07-18 | 2015-07-14 | 高深寬比結構的蝕刻方法及mems裝置的製作方法 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN105448697B (https=) |
| TW (1) | TW201604993A (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110890277B (zh) * | 2018-09-07 | 2022-05-10 | 无锡华润上华科技有限公司 | 沟槽式金属氧化物半导体肖特基势垒晶体管制备方法 |
| CN111252730A (zh) * | 2020-01-22 | 2020-06-09 | 成都工业学院 | 一种非对称半导体结构的制备方法 |
| CN113745101A (zh) * | 2020-05-29 | 2021-12-03 | 江苏鲁汶仪器有限公司 | 一种用于高深宽比器件刻蚀的方法及机台 |
| CN113200511B (zh) * | 2021-04-06 | 2024-08-16 | 杭州士兰集昕微电子有限公司 | 一种微机电传感器的背腔的制造方法 |
| CN114300413B (zh) * | 2021-12-02 | 2025-05-23 | 北京北方华创微电子装备有限公司 | 半导体封装结构的加工方法和半导体封装结构 |
| CN120767256B (zh) * | 2025-09-09 | 2025-11-07 | 上海邦芯半导体科技有限公司 | 一种改善高深宽比刻蚀结构填充性能的方法及半导体结构 |
| CN121096940B (zh) * | 2025-11-11 | 2026-02-17 | 徐州美兴光电科技有限公司 | 一种基于等离子体协同调控的半导体刻蚀方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6127278A (en) * | 1997-06-02 | 2000-10-03 | Applied Materials, Inc. | Etch process for forming high aspect ratio trenched in silicon |
| US6071822A (en) * | 1998-06-08 | 2000-06-06 | Plasma-Therm, Inc. | Etching process for producing substantially undercut free silicon on insulator structures |
| TW531833B (en) * | 2002-02-22 | 2003-05-11 | Nanya Technology Corp | Manufacturing method for shallow trench isolation with high aspect ratio |
| TWI313040B (en) * | 2003-02-20 | 2009-08-01 | Taiwan Semiconductor Mfg | Etching method for forming deep trench. |
| TWI255502B (en) * | 2005-01-19 | 2006-05-21 | Promos Technologies Inc | Method for preparing structure with high aspect ratio |
| US20100062606A1 (en) * | 2007-04-11 | 2010-03-11 | Ulvac, Inc. | Dry etching method |
| EP2399863A1 (en) * | 2010-06-22 | 2011-12-28 | Valtion Teknillinen Tutkimuskeskus | Multi-layer substrate structure and manufacturing method for the same |
| CN103594361A (zh) * | 2012-08-13 | 2014-02-19 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的形成方法 |
| CN103811408B (zh) * | 2012-11-08 | 2016-08-17 | 中微半导体设备(上海)有限公司 | 一种深硅通孔刻蚀方法 |
| CN103456620B (zh) * | 2013-09-11 | 2016-03-02 | 中微半导体设备(上海)有限公司 | 半导体结构的形成方法 |
-
2014
- 2014-07-18 CN CN201410345037.8A patent/CN105448697B/zh active Active
-
2015
- 2015-07-14 TW TW104122756A patent/TW201604993A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TWI560807B (https=) | 2016-12-01 |
| CN105448697A (zh) | 2016-03-30 |
| CN105448697B (zh) | 2018-05-01 |
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