TW201601858A - 將經乾燥之金屬燒結製品施加至用於電子組件之基材的預定導電表面部分之方法 - Google Patents

將經乾燥之金屬燒結製品施加至用於電子組件之基材的預定導電表面部分之方法 Download PDF

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TW201601858A
TW201601858A TW104112755A TW104112755A TW201601858A TW 201601858 A TW201601858 A TW 201601858A TW 104112755 A TW104112755 A TW 104112755A TW 104112755 A TW104112755 A TW 104112755A TW 201601858 A TW201601858 A TW 201601858A
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Taiwan
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substrate
electronic component
conductive surface
metal sintered
transfer substrate
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TW104112755A
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English (en)
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麥克 沙佛
蘇珊妮 克勞迪亞 達奇
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賀利氏德國有限責任兩合公司
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Publication of TW201601858A publication Critical patent/TW201601858A/zh

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    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
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    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
    • H05K3/207—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using a prefabricated paste pattern, ink pattern or powder pattern

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Geometry (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Die Bonding (AREA)

Abstract

本發明係關於用於將由經乾燥之金屬燒結製品製成之多個離散層片段施加至用於電子組件之基材之預定導電表面部分的方法，其包括以下步驟：(1)以與該等預定導電表面部分鏡像對稱之配置將由金屬燒結製品製成之多個離散層片段施加至平面轉移基材之一側；(2)乾燥由此施加之該金屬燒結製品，同時防止燒結；(3)配置並接觸具有由經乾燥之金屬燒結製品製成之該等層片段之該轉移基材，以例如面向用於電子組件之該基材之該表面，且同時確保該轉移基材之具備該經乾燥之金屬燒結製品之表面部分及用於電子組件之該基材之該等預定導電表面部分的一致定位；(4)將壓縮力施加至步驟(3)中所產生之接觸配置；及(5)自該接觸配置移除該轉移基材；其中在完成步驟(4)後該經乾燥之金屬燒結製品相對於用於電子組件之該基材之該等預定導電表面部分的黏著力係大於相對於該轉移 基材之該表面的黏著力；其中該平面轉移基材係不可燒結的，且若適用，為經塗覆的金屬箔或熱塑性膜；其中用於電子組件之該基材係具有包括一或多個10μm至500μm之凹陷之平面表面的基材，且另外，其係選自由引線框架、陶瓷基材、DCB基材及金屬複合材料組成之群，且其中至少一個預定導電表面部分係位於凹陷中。

Description

將經乾燥之金屬燒結製品施加至用於電子組件之基材的預定導電表面部分之方法
在電子行業中，已知使用金屬燒結製品用於電子組件(例如半導體晶片)之附接及電接觸以及自其之熱耗散。該等金屬燒結製品係揭示於(例如)WO2011/026623A1、EP2425920A1、EP2428293A2及EP2572814A1中。通常，該等金屬燒結製品係藉由印刷(例如網版或模版印刷)施加至支撐基材，若需要經乾燥，與電子組件一起經構形，且然後經受燒結過程。在不過渡經過液態之情況下，在燒結過程期間金屬顆粒藉由擴散連接在一起，同時在基材與電子組件之間形成固體之導電流及導熱金屬連接。
已知藉由配給施加為藉由印刷施加金屬燒結製品之替代方案。
本發明之目標係設計如下方法：使能夠將金屬燒結製品之多層片段並行施加(在一個製程步驟中施加)至基材，該等並非完全平面且若適用則已與電子組件一起經部分構形，並使基材及/或可能位於其上之電子組件上之溫度應力保持儘可能低。
本發明係關於用於將由經乾燥之金屬燒結製品製成之多個離散層片段施加至用於電子組件之基材之預定導電表面部分的方法。在本發明方法中適用具備經乾燥之金屬燒結製品之平面轉移基材。該方法 包括以下步驟：(1)以與預定導電表面部分鏡像對稱之配置將由金屬燒結製品製成之多個離散層片段施加至平面轉移基材之一側；(2)乾燥由此施加之金屬燒結製品，同時防止燒結；(3)配置並接觸具有由經乾燥之金屬燒結製品製成之層片段之轉移基材，以(例如)面向用於電子組件之基材之表面，且同時確保轉移基材之具備經乾燥之金屬燒結製品之表面部分及用於電子組件之基材之預定導電表面部分的一致定位；(4)將壓縮力施加至步驟(3)中所產生之接觸配置；及(5)自接觸配置移除轉移基材；其中在完成步驟(4)後經乾燥之金屬燒結製品相對於用於電子組件之基材之預定導電表面部分之黏著力係大於相對於轉移基材之表面之黏著力；其中平面轉移基材係不可燒結的，且若適用，為經塗覆的金屬箔或熱塑性膜；其中用於電子組件之基材係具有包括一或多個10μm至500μm之凹陷之平面表面的基材，且另外，其係選自由引線框架、陶瓷基材、DCB基材及金屬複合材料組成之群，且其中至少一個預定導電表面部分係位於凹陷中。
本發明亦係關於根據本發明方法產生並具備經乾燥之金屬燒結製品之用於電子組件之基材。
電子組件之實例包含主動組件(例如半導體晶片，例如LED、二極體、IGBT、閘流體、MOSFET、電晶體)及/或被動組件(例如電阻器、電容器、電感器及憶阻器)及/或壓電陶瓷及/或帕耳貼(Peltier)元件。
術語「經乾燥之金屬燒結製品」應理解為意指完全或基本上不 含揮發性成份之不再濕潤、未經燒結之金屬燒結製品。例如，「經乾燥之金屬燒結製品」意指已移除最初存在於金屬燒結製品中之98重量%至100重量%之揮發性成份且甚至在重複施加步驟(2)中所施加之乾燥條件後在經乾燥之金屬燒結製品證明為在重量測定中質量恆定或質量基本恆定。經乾燥之金屬燒結製品係經凝固、仍可燒結之金屬燒結製品，其在<70℃之溫度下形狀穩定。本發明方法之步驟(1)中所用之金屬燒結製品應在下文中更詳細地闡釋。
在本發明方法中施加經乾燥之金屬燒結製品之用於電子組件之基材係電子行業中之普通支撐基材且係選自由引線框架、陶瓷基材、DCB基材及金屬複合材料組成之群，其中用於電子組件之基材同時係具有平面表面之基材，該平面表面自身包括一或多個10μm至500μm之凹陷(其稱為腔)。該基材可為平坦基材。用於電子組件之基材包括用於向電子組件供應電壓/電流之導電表面部分。在此上下文中，術語「導電表面部分」係指基材之導電表面部分及/或其電絕緣表面上之導電表面部分之佈局，即其係指(例如)印刷導體之圖案。相比之下，術語「預定導電表面部分」係指導電錶面部分之欲施加經乾燥之金屬燒結製品及/或欲固定電子組件並藉助經乾燥之金屬燒結製品進行電接觸之彼等部分。在此上下文中至少一個預定導電表面部分係位於10μm至500μm之凹陷中。換言之，一個以上方案可行：
- 該基材具有一個10μm至500μm之凹陷且一個預定導電表面部分係位於該凹陷中，其中一或多個其他預定導電表面部分係位於凹陷外。
- 該基材具有一個10μm至500μm之凹陷且多個預定導電表面部分係位於該凹陷中，其中一或多個其他預定導電表面部分係位於凹陷外。
- 該基材具有一個10μm至500μm之凹陷且所有預定導電表面部 分皆係位於該凹陷中。
- 該基材具有多個10μm至500μm之凹陷且預定導電表面部分中之一者係位於該等凹陷中之一者中，而一或多個其他預定導電表面部分係位於該等凹陷外。
- 該基材具有多個10μm至500μm之凹陷且多個預定導電表面部分係位於該等凹陷中之一者中，而一或多個其他預定導電表面部分係位於該等凹陷外。
- 該基材具有多個10μm至500μm之凹陷且所有預定導電表面部分皆係位於該等凹陷中之一者中。
- 該基材具有多個10μm至500μm之凹陷且一個預定導電表面部分各自位於該等凹陷中之每一者中，而無任何、一或多個其他預定導電表面部分係位於該等凹陷外。
- 該基材具有多個10μm至500μm之凹陷且一個預定導電表面部分各自位於該等凹陷中之一些中，而無任何、一或多個其他預定導電表面部分係位於該等凹陷外。
- 該基材具有多個10μm至500μm之凹陷且多個預定導電表面部分各自位於該等凹陷中之每一者中，而無任何、一或多個其他預定導電表面部分係位於該等凹陷外。
- 該基材具有多個10μm至500μm之凹陷且多個預定導電表面部分各自位於該等凹陷中之一些中，而無任何、一或多個其他預定導電表面部分係位於該等凹陷外。
- 該基材具有多個10μm至500μm之凹陷，且在一些凹陷中一個、且在一些凹陷中多個預定導電表面部分係位於該等凹陷中之兩者或更多者中，而無任何、一或多個其他預定導電表面部分係位於該等凹陷外。
- 該基材具有多個10μm至500μm之凹陷，且在一些凹陷中一 個、且在一些凹陷中多個預定導電表面部分係位於該等凹陷中，其中不存在不具有任何預定導電表面部分之凹陷，且其中無任何、一或多個其他預定導電表面部分係位於該等凹陷外。
此外，在本發明方法中在向用於電子組件之基材提供由經乾燥之金屬燒結製品製成之層片段之前，該基材可已與一或多個電子組件一起經構形。視組件高度而定，可為例如10μm至200μm之深度或總深度，或在具有相對大組件高度之組件之情形下，在該等鄰近組件之間甚至為(例如)200μm至1,000μm之深度或總深度。總深度可為(例如)該等10μm至500μm之凹陷中之一者之深度加上毗鄰或緊接該凹陷定位之電子組件之組件高度及/或最大組件高度的和。
特定而言，用於電子組件之基材之導電表面部分係金屬的。在後一情形下，此係關於常用於電接觸之薄金屬層或熔敷金屬，例如由銅、銀、金、鈀、鎳、鋁及該等金屬之適宜合金製成。此可亦係關於塗覆有其他金屬層之金屬，例如塗覆有金層之鎳、塗覆有外部金及鈀層之鎳、塗覆有金層之銀/鈀合金。
在本發明方法之步驟(1)中，以相對於用於電子組件之基材之預定導電表面部分之鏡像對稱配置(即以與用於電子組件之基材之預定導電表面部分相對應、但鏡像對稱之配置)，將呈多個離散層片段之形式之金屬燒結製品施加至平面轉移基材之一側。自實踐之觀點看，在此上下文中，在一個步驟中或並行地施加離散層片段。術語「離散層片段」應理解為意指此並非係關於連續層，而係關於彼此隔離且自金屬燒結製品施加之個別層形狀之元件。自上文所提供之解釋易知，預定導電表面部分亦為彼此隔離之個別表面部分。
該金屬燒結製品係基本上已知為在電子行業中用於電子組件之附接及電接觸及自其之熱耗散的金屬燒結製品。除由一或多種金屬或金屬合金及/或在燒結過程期間形成金屬之金屬化合物製成之顆粒以 外，特定而言，金屬燒結製品亦含有除可能添加物以外之揮發性有機溶劑。金屬顆粒係(例如)由銅、鎳、鋁或特定而言銀製成之金屬顆粒，各自具有(例如)在1μm至10μm範圍內之平均粒徑(d50，藉由雷射繞射測定)。添加物之實例包含金屬顆粒之塗層，例如C8-C28脂肪酸、C8-C28脂肪酸鹽、C8-C28脂肪酸酯、常見燒結助劑及聚合結合劑。WO2011/026623A1、EP2425920A1、EP2428293A1及EP2572814A1代表揭示可使用之金屬燒結製品、特定而言金屬燒結糊之文件之實例。
平面轉移基材係不可燒結的，且若適用則係(例如)由聚酯、氟聚合物(例如)聚四氟乙烯、聚醯亞胺、聚矽氧或聚烯烴製成之經塗覆金屬箔或熱塑性膜。塑料膜之整塊或欲配備金屬燒結製品之側可提供(例如塗覆)有附著減少材料。黏著減少材料之實例包括基於聚矽氧或氟聚合物之物質。平面轉移基材較佳為透明塑料膜。
在完成步驟(4)後經乾燥之金屬燒結製品相對於用於電子組件之基材之預定導電表面部分之黏著力必須大於相對於轉移基材之表面之黏著力。例如若根據DIN EN 14099(2002年10月)使用黏著強度為220g/cm之黏著膠帶測定黏著力大0.4N/cm或更多，則其係足夠的。
在一實施例中，轉移基材係甚至在暴露至熱應力後在很大程度上尺寸穩定之非剛性熱塑性膜。非剛性熱塑性膜較佳顯示在120℃物體溫度下暴露至熱應力30分鐘後其長度及寬度尺寸之變化1.5%(ASTM D 1204)，即較佳地，在暴露至該條件後長度及寬度尺寸無尺寸變化或存在小於最大1.5%之變化(ASTM D 1204)。
可用作本發明方法中之轉移基材之熱塑性膜之實例包含市售塑料膜來自Mitsubishi之Hostaphan® RN75、來自DuPont之Mylar® A 50μm及/或75μm及來自Toray之Lumirror® 40.01。
通常藉由印刷(例如網版印刷或模版印刷)以(例如)至多200μm之 乾層厚度將金屬燒結製品施加至轉移基材。在足夠非黏性之金屬燒結製品之情形下，該施加亦可藉由噴霧實施，其中可方便地採取措施來保護不欲暴露至金屬燒結製品之區域。該等措施之實例包含施加膠帶或利用模版覆蓋。
在本發明方法之步驟(2)中，乾燥步驟(1)中所施加濕潤金屬燒結製品，同時防止燒結，即移除揮發性成份(例如有機溶劑)。較佳，金屬燒結製品之乾燥過程在適於自金屬燒結製品移除揮發性成份之條件(特定而言溫度條件)下進行，且在乾燥過程後在金屬燒結製品中不繼續完成燒結過程。對於此目的，可在烘箱中(例如在對流烘箱中)將具備金屬燒結製品之轉移基材加熱至(例如)80℃至150℃並持續10分鐘至30分鐘。在此上下文中，若適用，該烘箱可(例如)藉助氮氣氛圍而變得惰性。
如上文所提及，經乾燥之金屬燒結製品至少基本上不含揮發性成份(例如溶劑)，且除金屬顆粒及/或在稍後燒結過程中形成金屬之金屬化合物以外，其仍含有(例如)非揮發性添加物。使經乾燥之金屬燒結製品凝固，但並不燒結或僅部分燒結，即凝固之金屬燒結製品仍可燒結。
因此，其上定位有經乾燥之金屬燒結製品之轉移基材形成預製件，可將該預製件作為中間產物引導至包括步驟(3)至(5)之其他產生製程。包括步驟(3)至(5)之其他產生製程可在實施步驟(1)及(2)之製造商或另一製造商之處所進行。總而言之，中間產物穩定且處置得良好以至於其可經運輸用於進一步加工。此由凝固且尺寸穩定之經乾燥之金屬燒結製品造成。
本發明方法之步驟(3)涉及將具有由經乾燥之金屬燒結製品製成之層片段之轉移基材朝向用於電子組件之基材之表面定向且配置並接觸其，同時確保轉移基材之具備經乾燥之金屬燒結製品之表面部分及 用於電子組件之基材之預定導電表面部分的一致定位。此確保轉移基材上承載經乾燥之金屬燒結製品之位置由用於電子組件之基材之欲施加經乾燥之金屬燒結製品及/或稍後欲藉助經乾燥之金屬燒結製品附接並電接觸電子組件之該等預定導電表面部分覆蓋。步驟(3)中之配置可在任何位置中，例如在垂直或水平位置中。在水平位置中，例如，可將轉移基材配置在用於電子組件之基材下方，或反之亦然。
在本發明方法之為實際轉移步驟之步驟(4)中，將壓縮力施加至步驟(3)中所產生之接觸配置上，施加至整個表面或至少完全施加至其中定位經乾燥之金屬燒結製品之彼等位置中。例如，可施加0.5MPa至10MPa之接觸壓力並持續(例如)1秒至30秒之持續時間。在此上下文中，可方便地使用高達150℃之升高之物體溫度；可藉由(例如)加熱不期望及/或壓製工具之上側進行加熱。可使用常見器件來執行製程步驟(4)，例如層壓壓機，特定而言可加熱層壓壓機。另外，例如，可在沖孔機與具備經乾燥之金屬燒結製品之轉移基材之間使用具有經調適硬度(例如50至70之蕭氏硬度(Shore A hardness))之聚矽氧板。具體而言，若未將壓縮力施加至整個表面，則可在其中定位經乾燥之金屬燒結製品之位置處使用以沖孔機之方式起作用之輔助設備。特定而言，當基材已與電子組件、尤其與組裝高度相對大之電子組件一起經構形時，如所闡述繼續進行係有利的。此外，可方便地，轉移基材包括適於已存在之該等電子組件之凹槽，以使得轉移基材可完全接觸用於電子組件之基材之表面。
在完成步驟(4)後，在本發明方法之步驟(5)中移除轉移基材，其中經乾燥之金屬燒結製品保留在用於電子組件之基材之預定導電表面部分上。最初附著至轉移基材且然後藉助轉移來移除之經乾燥之金屬燒結製品之表面現意欲容納及/或連接至電子組件，此係其他產生製程之目的。
步驟(3)至(5)可以批式過程或連續地(例如以滾層壓過程之方式)進行。自時間觀點來看，以步驟(3)至(5)之順序在一個步驟中或同時地，將離散層片段自轉移基材轉移至用於電子組件之基材。
在一實施例中，本發明方法可適當地進行，以使得將用於電子組件之基材提供於具有經乾燥之金屬燒結製品之兩側上。基本上，在此上下文中相同製程步驟(1)至(5)繼續進行，惟將用於步驟(3)至(4)中之電子組件之基材配置於適當地具備經乾燥之金屬燒結製品之兩個轉移基材之間且然後在步驟(5)中自用於電子組件之基材之兩側移除轉移基材。
實施以用於容納並連接至電子組件之步驟屬於亦可在(例如)另一製造商之處所處實施之其他產生製程。該其他產生製程包括實際燒結步驟。在此上下文中，首先，自承載根據本發明方法轉移至其之經乾燥之金屬燒結製品及電子組件的用於電子組件之基材產生常見夾心式(sandwich)配置。然後使其夾心式配置經受燒結過程，在此過程中自經乾燥之金屬燒結製品產生經燒結之金屬燒結製品並在基材與電子組件之間形成機械、電及導熱連接。
包括步驟(1)至(5)之本發明方法之產物呈具備經乾燥之金屬燒結製品之用於電子組件之基材之形式，其係可作為中間產物傳遞至前一部分中所解釋之其他產生製程之預製件。
總而言之，中間產物穩定且處置得如此好，以至於其可經運輸用於進一步加工。此由凝固且尺寸穩定之所轉移之經乾燥金屬燒結製品造成。
本發明方法使能夠在一個步驟中將呈層片段之形式之經乾燥之金屬燒結製品施加至用於電子組件之基材且不會使基材或電子組件暴露於在金屬燒結製品之乾燥過程期間普遍存在之溫度應力中。在此上下文中，本發明方法使能夠將經乾燥之金屬燒結製品施加於基材表面 上之凹陷中，且若適用施加於基材上已存在之電子組件之間，此藉助習用網版或模版印刷不可行。
在下文中藉助一實例性實施例闡釋本發明，但此不能理解為(例如)以任何方式或形式限制本發明。
實例性實施例(燒結作為用於電子組件之基材之500μm厚銀箔(來自GoodFellow，Typ AG000465)中之150μm深之腔中之2個二極體(IFX IDC73D120T6H))：
藉助DEK Horizon 03iX模版印刷機使用來自Koenen之75μm厚鋼模版將來自Heraeus(Hanau,Germany)之燒結糊ASP 043-04印刷至作為轉移基材之PET膜(來自Mitsubishi，Hostaphan® RN7525JK型)上(印刷速度20mm/s，刮刀壓力2kg)，其中所印刷燒結糊之佈局經配置以與銀板中之腔之佈局鏡像對稱。
在對流烘箱(Binder)中在100℃下將經印刷之轉移膜乾燥15min。
為將燒結糊轉移至銀箔之腔中，將已經印刷並具備經乾燥燒結糊之轉移膜經由印刷側以燒結糊及腔之一致配向置於銀箔上
為分配壓力，將聚矽氧膜(Alpha Tectrade，型號「Silikon 60 rot Basic」)配置於轉移膜之不承載印刷之側上。
將燒結糊轉移至層壓壓機(Laufer)中之銀箔中之腔中(在銀箔之側面上在5MPa之接觸壓力下在100℃之溫度下10sec，轉移膜之側面上不進行加熱)。在完成轉移後，移除轉移膜且將銀箔在具備乾燥燒結糊之腔中與二極體一起構形且然後經受壓力燒結過程。

Claims (11)

  1. 一種用於將由經乾燥之金屬燒結製品製成之多個離散層片段施加至用於電子組件之基材之預定導電表面部分的方法，其包括以下步驟：(1)以與該等預定導電表面部分鏡像對稱之配置將由金屬燒結製品製成之多個離散層片段施加至平面轉移基材之一側；(2)乾燥由此施加之該金屬燒結製品，同時防止燒結；(3)配置並接觸具有由經乾燥之金屬燒結製品製成之該等層片段之該轉移基材，以例如面向用於電子組件之該基材之該表面，且同時確保該轉移基材之具備該經乾燥之金屬燒結製品之表面部分及用於電子組件之該基材之該等預定導電表面部分的一致定位；(4)將壓縮力施加至步驟(3)中所產生之接觸配置；及(5)自該接觸配置移除該轉移基材；其中在完成步驟(4)後該經乾燥之金屬燒結製品相對於用於電子組件之該基材之該等預定導電表面部分的黏著力係大於相對於該轉移基材之該表面的黏著力；其中該平面轉移基材係不可燒結的，且若適用，為經塗覆的金屬箔或熱塑性膜；其中用於電子組件之該基材係具有包括一或多個10μm至500μm之凹陷之平面表面的基材，且另外，其係選自由引線框架、陶瓷基材、DCB基材及金屬複合材料組成之群，且其中至少一個預定導電表面部分係位於凹陷中。
  2. 如請求項1之方法，其中該轉移基材係顯示在120℃物體溫度下暴露至熱應力30分 鐘後其長度及寬度尺寸之變化1.5%(ASTM D 1204)的非剛性熱塑性膜。
  3. 如請求項1或2之方法，其中用於電子組件之該基材係與一或多個電子組件一起經預構形。
  4. 如請求項3之方法，其中該轉移基材包括用於電子組件之凹槽，該等凹槽已存在於用於電子組件之該基材上。
  5. 如請求項1之方法，其中該熱塑性膜係透明的。
  6. 如請求項1之方法，其中在步驟(1)中藉由印刷或噴霧施加該金屬燒結製品。
  7. 如請求項1之方法，其中步驟(2)中之該乾燥過程藉由加熱至80℃至150℃之物體溫度來進行10分鐘至30分鐘。
  8. 如請求項1之方法，其中在步驟(4)中施加0.5MPa至10MPa之接觸壓力並持續1秒至30秒之持續時間。
  9. 如請求項1之方法，其中在步驟(4)中使用高達150℃之升高之物體溫度。
  10. 一種用於電子組件之基材，其根據如請求項1至9中任一項之方法配備經乾燥之金屬燒結製品。
  11. 一種如請求項10之在一方法中具備經乾燥之金屬燒結製品之用於電子組件之基材之用途，其中首先，自具備經乾燥之金屬燒結製品之用於電子組件之該基材及電子組件產生常見夾心式(sandwich)配置，且然後使該夾心式配置經受燒結過程。
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