JP6407305B2 - 転写基板を用いて乾燥金属焼結化合物を電子部品用キャリア上へ適用する方法および対応するキャリアおよび電子部品との焼結結合のためのその使用 - Google Patents
転写基板を用いて乾燥金属焼結化合物を電子部品用キャリア上へ適用する方法および対応するキャリアおよび電子部品との焼結結合のためのその使用 Download PDFInfo
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- JP6407305B2 JP6407305B2 JP2016565289A JP2016565289A JP6407305B2 JP 6407305 B2 JP6407305 B2 JP 6407305B2 JP 2016565289 A JP2016565289 A JP 2016565289A JP 2016565289 A JP2016565289 A JP 2016565289A JP 6407305 B2 JP6407305 B2 JP 6407305B2
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1131—Sintering, i.e. fusing of metal particles to achieve or improve electrical conductivity
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- Engineering & Computer Science (AREA)
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- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Mechanical Engineering (AREA)
- Geometry (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Die Bonding (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
Description
(1)金属焼結調製物から作製された複数の分離層断片を、所定の導電性表面部分に対して鏡面対称である配置において平面転写基板の一面に適用する工程と、
(2)焼結を防ぎながら、このようにして適用された金属焼結調製物を乾燥させる工程と、
(3)電子部品用基板の表面に面するように乾燥金属焼結調製物から作製された層断片を有する転写基板を配置し、接触させ、乾燥金属焼結調製物が提供された転写基板の表面部分と電子部品用基板の所定の導電性表面部分との一致した配置を確実にする工程と、
(4)工程(3)で生成された接触構成に圧縮力を適用する工程と、
(5)接触構成から転写基板を除去する工程と、
を含み、工程(4)の完了後に、電子部品用基板の所定の導電性表面部分に対する乾燥金属焼結調製物の接着力は、転写基板の表面に対する接着力より大きく、
平面転写基板は非焼結性であり、適用できる場合、被覆金属箔または熱可塑性フィルムであり、
電子部品用基板は10〜500μmの1つ以上のくぼみを含む平面状表面を有する基板であり、さらにリードフレーム、セラミック基板、DCB基板、および金属複合材からなる群から選択され、少なくとも1つの所定の導電性表面部分はくぼみの中に位置する。
ヘレウス(ドイツ、ハナウ)製の焼結ペーストASP 043−04を、Koenen製の75μmの厚さのスチールステンシルを用いたDEK Horizon 03iXステンシルプリンタを用いて、転写基板としての三菱製のPETフィルム、タイプHostaphan(登録商標)RN7525JK上に印刷した(印刷速度20mm/秒、ドクターブレード圧力2kg)。印刷された焼結ペーストのレイアウトは、銀ペースト中のキャビティのレイアウトに鏡面対称になるように配置した。
Claims (12)
- 乾燥金属焼結調製物から作製された複数の分離層断片の、電子部品用基板の複数の所定の導電性表面部分への適用方法であって、
(1)金属焼結調製物から作製された複数の分離層断片を、前記複数の所定の導電性表面部分に対して鏡面対称である配置において平面転写基板の一面に適用する工程と、
(2)焼結を防ぎながら、このようにして適用された前記金属焼結調製物を乾燥させる工程と、
(3)前記電子部品用基板の表面に面するように乾燥金属焼結調製物から作製された前記複数の分離層断片を有する前記平面転写基板を配置し、前記乾燥金属焼結調製物の表面部分と前記電子部品用基板の複数の所定の導電性表面部分とを接触させる工程と、
(4)工程(3)で生成された接触構成に圧縮力を適用する工程と、
(5)前記接触構成から前記平面転写基板を除去する工程と、
を含み、
工程(4)の完了後に、前記電子部品用基板の複数の所定の導電性表面部分に対する前記乾燥金属焼結調製物の接着力が前記平面転写基板の表面に対する接着力より大きく、
前記平面転写基板が非焼結性であり、
前記電子部品用基板は10μm以上500μm以下の1つ以上のくぼみを含む平面状表面を有する基板であり、さらにリードフレーム、セラミック基板、DCB基板、および金属複合材からなる群から選択され、少なくとも1つの所定の導電性表面部分はくぼみの中に位置する、適用方法。 - 前記平面転写基板が、120℃の対象温度で30分間熱応力にさらされた後、前記平面転写基板の長さと幅の寸法の変化が、ASTM D 1204に準拠した方法によって測定された値で、1.5%以下を示す軟質熱可塑性フィルムである、請求項1に記載の方法。
- 前記工程(3)の前に、前記電子部品用基板が1つ以上の電子部品とともに構成されている、請求項1または2に記載の方法。
- 前記平面転写基板が、前記電子部品用基板上に既に存在する電子部品用の凹部を含む、請求項3に記載の方法。
- 前記平面転写基板は、透明な熱可塑性フィルムである、請求項1〜4のいずれか一項に記載の方法。
- 前記金属焼結調製物が工程(1)で印刷または噴霧によって適用される請求項1〜5のいずれか一項に記載の方法。
- 工程(2)での乾燥プロセスが80℃以上150℃以下の対象温度に加熱することにより10分以上30分以下行われる、請求項1〜6のいずれか一項に記載の方法。
- 0.5MPa以上10MPa以下の接触圧力が工程(4)で1秒以上30秒以下適用される、請求項1〜7のいずれか一項に記載の方法。
- 最高150℃の対象温度の上昇が工程(4)で使用される、請求項1〜8のいずれか一項に記載の方法。
- 前記工程(1)では、前記複数の分離層断片を一度に適用する請求項1〜9のいずれか一項に記載の方法。
- 前記複数の分離層断片は、前記工程(3)〜(5)の順序で、前記平面転写基板から前記電子部品用基板に一度に転写される請求項1〜10のいずれか一項に記載の方法。
- 請求項1〜11のいずれか一項に記載の方法によって乾燥金属焼結調製物が提供された電子部品用基板の製造方法。
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EP14167010 | 2014-05-05 | ||
PCT/EP2014/068739 WO2015169401A1 (de) | 2014-05-05 | 2014-09-03 | Verfahren zum aufbringen getrockneter metallsinterzubereitung mittels eines transfersubstrats auf einen träger für elektronikbauteile, entsprechender träger und seine verwendung zum sinterverbinden mit elektronikbauteilen |
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CN107845627B (zh) * | 2017-09-29 | 2020-02-18 | 深圳奥比中光科技有限公司 | 多接近度检测光传感器 |
US11373976B2 (en) * | 2019-08-02 | 2022-06-28 | Rockwell Collins, Inc. | System and method for extreme performance die attach |
JP7023302B2 (ja) * | 2020-02-04 | 2022-02-21 | 田中貴金属工業株式会社 | 導電性接合材料を備える接合部材及び接合方法 |
JP7536528B2 (ja) | 2020-06-29 | 2024-08-20 | 日東電工株式会社 | 積層体 |
TW202335556A (zh) * | 2022-01-20 | 2023-09-01 | 美商阿爾發金屬化工公司 | 使用層壓模組化預製件接合電組件及機械組件之方法 |
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US6029882A (en) * | 1998-04-27 | 2000-02-29 | International Business Machines Corporation | Plastic solder array using injection molded solder |
US7059512B2 (en) * | 2002-11-06 | 2006-06-13 | Ricoh Company, Ltd. | Solder alloy material layer composition, electroconductive and adhesive composition, flux material layer composition, solder ball transferring sheet, bump and bump forming process, and semiconductor device |
JP2004172612A (ja) * | 2002-11-06 | 2004-06-17 | Ricoh Co Ltd | 微小径バンプを有する半導体素子、インクジェット方式によるバンプ形成およびそれに用いるインク組成物 |
US7005325B2 (en) * | 2004-02-05 | 2006-02-28 | St Assembly Test Services Ltd. | Semiconductor package with passive device integration |
US7847375B2 (en) * | 2008-08-05 | 2010-12-07 | Infineon Technologies Ag | Electronic device and method of manufacturing same |
DE102009040076A1 (de) | 2009-09-04 | 2011-03-10 | W.C. Heraeus Gmbh | Metallpaste mit Oxidationsmittel |
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US8598694B2 (en) * | 2011-11-22 | 2013-12-03 | Infineon Technologies Ag | Chip-package having a cavity and a manufacturing method thereof |
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US20170194169A1 (en) | 2017-07-06 |
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JP2017520907A (ja) | 2017-07-27 |
MX2016012036A (es) | 2017-01-19 |
WO2015169401A1 (de) | 2015-11-12 |
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