CN110546747A - 借助金属浆料来连接器件的方法 - Google Patents

借助金属浆料来连接器件的方法 Download PDF

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Publication number
CN110546747A
CN110546747A CN201880026965.4A CN201880026965A CN110546747A CN 110546747 A CN110546747 A CN 110546747A CN 201880026965 A CN201880026965 A CN 201880026965A CN 110546747 A CN110546747 A CN 110546747A
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China
Prior art keywords
metal paste
devices
radiation
drying
metal
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CN201880026965.4A
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English (en)
Inventor
W·施米特
M·沙福尔
S·K·杜赫
J·纳赫赖纳
周莉美
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Heraeus Deutschland GmbH and Co KG
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Heraeus Precious Metals GmbH and Co KG
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Publication of CN110546747A publication Critical patent/CN110546747A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B22F1/107—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • B23K1/203—Fluxing, i.e. applying flux onto surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
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    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps
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    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
    • B22F7/064—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts using an intermediate powder layer
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    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Abstract

一种连接器件的方法，包括以下步骤：(1)将含有有机溶剂的金属浆料施覆至第一器件的接触面，(2)视情况将所述金属浆料施覆至需要与所述第一器件连接在一起的第二器件的接触面，(3)用所述两个器件及位于其间的金属浆料层制造夹层配置，(4)对位于所述两个器件之间的金属浆料层进行干燥，以及(5)对包括由经干燥的金属浆料构成的层的夹层配置进行无压烧结，其中通过用具有波长范围为750至1500nm的峰值波长的IR辐射进行照射来实施所述干燥和所述无压烧结。所述器件可以选自由衬底、有源器件和无源器件组成的群组。所述器件中的一个或两个针对所述IR辐射具有可透性。可以在含氧或无氧气氛中实施步骤(4)和/或步骤(5)，其中在两种情形下，所述器件中的一个或两个可以具有易氧化接触面。

Description

借助金属浆料来连接器件的方法
本发明涉及一种借助金属浆料来连接器件的方法。
在功率电子与消费电子领域，对具有较高压力敏感性及温度敏感性的器件的连接工作提出极高要求。有鉴于此，通常通过粘合来将这些压力敏感及温度敏感的器件连接在一起。但粘合技术的缺点是，在器件之间会产生导热性或导电性接触点有所不足的接触点。
现有技术中解决这项难题的解决方案是，无压力地通过烧结来将待连接器件连接在一起。无压烧结是一项将器件牢固连接在一起的非常简单的工艺。这项工艺通常是将含有有机溶剂的金属浆料施覆至待连接器件中的一或两个的待连接接触面，并使得待连接接触面彼此朝向地以位于其间的金属浆料层发生接触，从而形成夹层配置。这些器件的这两个彼此朝向的接触面形成共同重叠面。随后在高温下实施干燥步骤，而后在更高的温度条件下无压力地(不进行压制地)实施烧结步骤，在这个过程中在器件之间产生固态的机械连接。通常在对流炉中实施干燥和烧结。视待连接器件的连接面或接触面以及重叠面的具体大小(如1至25mm2)而定地，现有技术中的这个干燥过程在100至160℃的炉温条件下需要30至180分钟的时间。所选干燥时间过短时，通常会在尚需烧结的层中形成有害的缺陷，如缩孔。这类孔隙或缺陷不仅可能削弱将来实施为烧结层的连接的机械强度，而且会影响其导电性以及导热性。
本发明的目的是，不是通过对流，而是借助IR辐射(红外辐射)来实施干燥和无压烧结。
本发明的方法是一种连接器件的方法，包括以下步骤：
(1)将含有有机溶剂的金属浆料施覆至第一器件的接触面，
(2)视情况将所述金属浆料施覆至需要与所述第一器件连接在一起的第二器件的接触面，
(3)用所述两个器件及位于其间的金属浆料层制造夹层配置，
(4)对位于所述两个器件之间的金属浆料层进行干燥，以及
(5)对包括由经干燥的金属浆料构成的层的夹层配置进行无压烧结，
其特征在于，通过用具有波长范围为750至1500nm的峰值波长的IR辐射(红外辐射)进行照射来实施所述干燥和所述无压烧结。
本发明的方法包括步骤(1)至(5)。这些步骤尤指前后相继的步骤，特别是不含中间步骤的紧密相连的步骤。
本发明中的器件这一概念优选包括单个部件。这些单个部件优选无法进一步分解。
这些器件分别具有一个，视情况多个接触面。这些接触面通常是金属的，例如形式为金属化层。这些器件或接触面的金属可以是纯金属或金属合金。该金属例如为铝、铜、银、金、镍、钯、铁和铂。
本发明的方法所用器件的接触面积为1至150mm2，特别是>20至150mm2，尤其是40至150mm2。有利地，本发明的方法也能应用于具有较大接触面的器件且仍能缩短实施干燥和无压烧结的时间，而不必付出形成前述类型的缺陷的代价。
第一器件和需要与其连接的第二器件可以是同一类型的，即二者例如可以均为衬底，也可以均为有源或无源器件，或者一个有源和一个无源器件。或者一个器件是衬底，另一器件是有源或无源器件，反之亦然。衬底、有源器件和无源器件尤指应用于电子设备中的部件。
例如可以将以下实施方式区别开来：
第一器件： 第二器件：
衬底 衬底
有源器件 无源器件
无源器件 有源器件
有源器件 有源器件
无源器件 无源器件
衬底 有源器件
衬底 无源器件
无源器件 衬底
有源器件 衬底
衬底例如指IMS衬底(绝缘金属衬底)、DCB衬底(直接铜接合衬底)、AMB衬底(活性金属焊接衬底)、陶瓷衬底、PCB(印制电路板)和引线框。
有源器件例如指二极管、LED(light emitting diodes，发光二极管)、Die(半导体芯片)、IGBR(insulated-gate bipolar transistors，绝缘栅双极晶体管)、IC(integratedcircuits，集成电路)和MOSFET(metal-oxide-semiconductor field-effecttransistors，金属氧化物半导体场效应晶体管)。
无源器件例如指传感器、底板、冷却体、电阻器、电容器和线圈。
在本发明的方法的步骤(1)中，将含有有机溶剂的金属浆料施覆至第一器件的接触面。
含有有机溶剂的金属浆料指的是本领域技术人员所通常了解的用来在器件或其接触面之间建立烧结连接的金属浆料，也称金属烧结浆料。这类金属浆料例如含有25至90wt％的可烧结金属粒子，特别是银粒子、银合金粒子、铜粒子和/或铜合金粒子；5至30wt％的有机溶剂；0至65wt％的金属前驱体化合物(金属前体)，特别是氧化银、碳酸银；0至5wt％的烧结助剂，如过氧化物、甲酸盐；和0至5wt％的其他添加剂，如饱和脂肪酸和/或聚合物(如乙基纤维素或聚酰亚胺)。
例如在WO 2016/071005 A1、EP 3 009 211 A1、WO 2016/028221 A1、WO 2015/193014 A1、WO 2014/177645 A1、WO 2014/170050 A1、WO 2011/026624 A1、WO 2011/026623 A1、EP 2 572 814 A1、EP 2 425 920 A1和EP 2 158 997 A2中揭示过这类金属浆料的多种实施方式。
可以借助传统方法，例如借助丝网印刷、孔版印刷或喷射等印刷法来将金属浆料施覆至第一器件的接触面。此外也可以借助放液技术、借助针转移或通过浸渍来施覆金属浆料。
本发明的方法包括可选步骤(2)：如果实施步骤(2)，则将前述金属浆料同样施覆至第二器件的接触面。施覆方法如前所述。
在本发明的方法的步骤(3)中，用所述两个器件及位于所述两个器件间的金属浆料制造夹层配置。为此，要么将第一器件以其配设有金属浆料的接触面放置在第二器件的视情况同样配设有该金属浆料的接触面上，要么将第二器件以其视情况配设有金属浆料的接触面放置在第一器件的配设有该金属浆料的接触面上。最终，在这些待连接器件之间存在金属浆料的层。
所述器件之间的金属浆料的层的湿层厚度优选为20至200pm。本文中的湿层厚度指的是这些器件的彼此朝向或相对的接触面间在干燥前的距离。湿层厚度例如可以与所选的金属浆料施覆法相关。在借助丝网印刷法而施覆的金属浆料上，湿层厚度例如可以是20至50μm，孔版印刷时例如是50至200μm，放液施覆时例如是20至100μm，喷射施覆时例如是20至70μm。
在本发明的方法的步骤(4)中，对位于所述两个器件的接触面之间的金属浆料层进行干燥，在干燥过程中移除金属浆料中的有机溶剂。根据一种优选实施方式，相对有机溶剂在该金属浆料(即待施覆金属浆料)中的初始比例而言，有机溶剂在经干燥的金属浆料中的比例例如为0至5wt％或0至<1wt％。换言之，根据这个优选实施方式，在所述干燥过程中例如将该金属浆料中最初所含的有机溶剂的95至100wt％或者>99至100wt％移除。
通过用具有波长范围为750至1500nm，优选750至1200nm的峰值波长的IR辐射进行照射来实施所述干燥。视需要也可以采用对流加以辅助，但此举既非必要又非优选方案。换言之，单凭用具有波长范围为750至1500nm，优选750至1200nm的峰值波长的IR辐射进行照射来实施所述干燥，不仅是可行的，而且是优选的。
可应用于这种IR辐射的辐射源例如包括常见的NIR辐射器(近红外辐射器)。这类NIR辐射器例如可以从Heraeus公司获得。这些NIR辐射器例如可以是高效短波辐射器。这个或这些NIR辐射器的工作功率例如可以是15至100W/cm(每厘米辐射器长度的瓦特数)，优选20至50W/cm。NIR辐射器的辐射器表面温度(螺旋灯丝温度)例如为1800至3000℃，优选为1850至2500℃。适宜的NIR辐射器的最大发射光谱范围例如为750至1500nm，优选为750至1200nm，特别是750至1500nm或者750至1200nm。
可以静态地或者在连续式设备中实施IR照射，其中由器件与位于其间的待干燥金属浆料构成的需要照射的夹层配置和/或IR辐射源相对彼此地进行运动。
这两个器件中的一个或两个针对IR辐射具有可透性，亦即，部分或完全可透，并且在任何情况下针对本发明的方法的用途而言具有足够的可透性。换言之，所述器件中的至少一个并不完全吸收IR辐射。穿过该一个或者两个针对IR辐射具有可透性的器件实施IR照射。根据优选方案，仅穿过一个或者该一个针对IR辐射具有可透性的器件实施IR照射。优选地，从上而下地穿过该位于上方的器件实施IR照射。针对IR辐射具有可透性的器件例如指衬底(如陶瓷衬底)、有源器件(如二极管、LED、Die、IGBT、IC、MOSFET)，和无源器件(如传感器、陶瓷冷却体、电阻器、电容器和线圈)。
IR辐射源或者确切言之IR辐射源的辐射出射面与金属浆料的待干燥层间的距离例如为1至50cm，优选为5至20cm。
这两个器件的彼此朝向的接触面形成共同重叠面。一般而言，具有较小接触面的器件的接触面得到充分利用，亦即，该重叠面的大小一般而言相当于具有较小接触面的器件的全部接触面。
视这两个器件的彼此朝向的接触面所形成的共同重叠面的具体大小(如1至150mm2)而定地，特别是单凭该IR照射所引起的干燥过程例如仅需1至60分钟的时间段，因而远少于现有技术中实施前述炉内干燥的情形。与实施炉内干燥相比不会造成任何品质上的劣势。当在上述范围的下限上的重叠面较小时，采用较短的干燥时间即可，而在重叠面较大时，干燥时间延长至上述范围的上限。
本领域技术人员可以选择步骤(4)中的IR照射参数和/或干燥时间，从而避免干燥中或经干燥的金属浆料的烧结或预烧结。
在本发明的方法的步骤(5)中，对包括所述经干燥的金属浆料的层的夹层配置进行无压烧结。
与步骤(4)中的干燥一样，同样通过用前述IR辐射进行照射来实施该无压烧结。优选可以将步骤(4)与(5)紧挨着实施，具体方式例如在于：步骤(4)中的干燥结束后，将IR照射不间断地继续应用于步骤(5)。这样一来，步骤(4)与(5)就能实际上融为一体。但也可以在步骤(4)与(5)之间实施间断并在其间实施冷却。
通过用具有波长范围为750至1500nm，优选750至1200nm的峰值波长的IR辐射进行照射来实施所述无压烧结。视需要也可以采用对流加以辅助，但此举既非必要又非优选方案。换言之，与实施干燥一样单凭用具有波长范围为750至1500nm，优选750至1200nm的峰值波长的IR辐射进行照射来实施所述无压烧结，不仅是可行的，而且是优选的。
进行IR辐射的辐射源及其工作状态参阅此前就干燥步骤(4)所作的阐述。
可以与该干燥步骤(4)一样静态地或者在连续式设备中实施IR照射，其中由器件与位于其间的需要无压烧结的金属浆料构成的需要照射的夹层配置和/或IR辐射源相对彼此地进行运动。
与该干燥步骤(4)一样穿过该一个或者两个针对IR辐射具有可透性的器件实施IR照射。根据优选方案，仅穿过一个或者该一个针对IR辐射具有可透性的器件实施IR照射。优选地，从上而下地穿过该位于上方的器件实施IR照射。
IR辐射源或者确切言之IR辐射源的辐射出射面与金属浆料的需要无压烧结的层间的距离例如为1至50cm，优选为5至20cm。
视这两个器件的彼此朝向的接触面所形成的共同重叠面的具体大小(如1至150mm2)而定地，该IR照射所引起的无压烧结例如仅需15至90分钟的时间段。与在炉内实施无压烧结相比不会造成任何品质上的劣势。当在上述范围的下限上的重叠面较小时，采用较短的无压烧结时间即可，而在重叠面较大时，该时间段延长至上述范围的上限。
可以在不受特别限制的气氛中实施步骤(4)和(5)。例如可以在含氧气氛(如空气)中实施干燥和无压烧结。本发明的方法能够实现相对较短的干燥时间和同样较短的无压烧结时间，这样一来，即使就具有易氧化接触面(如铜接触面或镍接触面)的器件而言，也能在含氧气氛(如空气)中工作。
视需要当然也可以在无氧气氛中实施干燥和无压烧结。本发明中的无氧气氛指的是氧含量不高于100Vol.-ppm(体积ppm)，优选不高于10Vol.-ppm，进一步优选不高于1Vol.-ppm的气氛。
综上所述，本发明的连接器件的方法与对流式现有技术相比具备优势，如缩短干燥时间和无压烧结时间而不影响品质、将无压烧结连接技术的用途扩展至具有较大接触面的器件，并且即使就加工具有易氧化接触面(如铜接触面或镍接触面)的器件而言，也无需进行惰性化处理。
实例：
比较实例1，制造金属浆料：将85wt％的银粒子(含有0.6wt％月桂酸/硬脂酸，重量比为25:75，经涂布的银片)、7.4wt％的α-松油醇、7.4wt％的异十三醇和0.2wt％的乙基纤维素混合成金属浆料。
比较实例2，施覆实例1中的金属浆料并形成夹层配置：借助孔版印刷将实例1中的金属浆料以75μm的湿层厚度及4mm·4mm的面积整面施覆至DCB衬底。将硅芯片以其4mm·4mm的银接触面积放置在施覆的浆料上，从而形成一个夹层配置，其中DCB衬底与芯片形成4mm·4mm的共同重叠面积。
比较实例3a，在炉内对实例2中的夹层配置进行干燥：在氮气氛中在150℃炉温下对实例2中所提供的夹层配置进行干燥，直至相对金属浆料中最初所含的有机溶剂而言，剩余溶剂含量达到<0.5wt％(重量测量法测定)。干燥过程需要60分钟。
比较实例3b，通过IR照射对实例2中的夹层配置进行干燥：用长度为30cm，功率为30W/cm，灯丝温度为2009℃且峰值波长为1100nm的NIR辐射器以10cm的距离从硅芯片的上方在空气中照射实例2中所提供的夹层配置，从而去除有机溶剂，直至相对金属浆料中最初所含的有机溶剂而言，剩余溶剂含量达到<0.5wt％(重量测量法测定)。单凭IR照射所引起的干燥过程需要10分钟。
比较实例4a，在炉内对实例3a中经干燥的夹层配置进行无压烧结：在对流炉中，在氮气氛中在230℃炉温下对实例3a中经干燥的夹层配置进行无压烧结60分钟。冷却后通过抗剪强度来测定附着度。在此过程中，在260℃条件下用剪凿以0.3mm/s的速度剪切硅芯片。借助测力计(DAGE，Deutschland公司的仪器DAGE 2000)来记录作用力。超过20N/mm2的抗剪强度是满意的结果。所测抗剪强度：23N/mm2。
比较实例4b，在炉内对实例3b中经干燥的夹层配置进行无压烧结：在对流炉中，在氮气氛中在230℃炉温下对实例3b中经干燥的夹层配置进行无压烧结60分钟。随后通过抗剪强度来以与实例4a相同的方式测定附着度。所测抗剪强度：24N/mm2。
本发明的实例4c，通过IR照射对实例3b中经干燥的夹层配置进行无压烧结：用长度为30cm，功率为30W/cm，灯丝温度为2009℃且峰值波长为1100nm的NIR辐射器以10cm的距离从硅芯片的上方照射实例3b中经干燥的夹层配置20分钟，从而进行无压烧结，其中实例3b中的IR照射过程不间断地继续进行。随后通过抗剪强度来以与实例4a相同的方式测定附着度。所测抗剪强度：21N/mm2。
比较实例5，施覆实例1中的金属浆料并形成夹层配置：借助孔版印刷将实例1中的金属浆料以75μm的湿层厚度及5mm·8mm的面积整面施覆至DCB衬底。将硅芯片以其5mm·8mm的银接触面积放置在施覆的浆料上，从而形成一个夹层配置，其中DCB衬底与芯片形成5mm·8mm的共同重叠面积。
比较实例6a，在炉内对实例5中的夹层配置进行干燥：在氮气氛中在150℃炉温下对实例5中所提供的夹层配置进行干燥，直至相对金属浆料中最初所含的有机溶剂而言，剩余溶剂含量达到<0.5wt％(重量测量法测定)。干燥过程需要90分钟。
比较实例6b，通过IR照射对实例5中的夹层配置进行干燥：用长度为30cm，功率为30W/cm，灯丝温度为2009℃且峰值波长为1100nm的NIR辐射器以10cm的距离从硅芯片的上方在空气中照射实例5中所提供的夹层配置，从而去除有机溶剂，直至相对金属浆料中最初所含的有机溶剂而言，剩余溶剂含量达到<0.5wt％(重量测量法测定)。单凭IR照射所引起的干燥过程需要20分钟。
比较实例7a，在炉内对实例6a中经干燥的夹层配置进行无压烧结：在对流炉中，在氮气氛中在230℃炉温下对实例6a中经干燥的夹层配置进行无压烧结60分钟。冷却后通过抗剪强度来测定附着度。在此过程中，在260℃条件下用剪凿以0.3mm/s的速度剪切硅芯片。借助测力计(DAGE，Deutschland公司的仪器DAGE 2000)来记录作用力。所测抗剪强度：22N/mm2。
比较实例7b，在炉内对实例6b中经干燥的夹层配置进行无压烧结：在对流炉中，在氮气氛中在230℃炉温下对实例6b中经干燥的夹层配置进行无压烧结60分钟。随后通过抗剪强度来以与实例7a相同的方式测定附着度。所测抗剪强度：22N/mm2。
本发明的实例7c，通过IR照射对实例6b中经干燥的夹层配置进行无压烧结：用长度为30cm，功率为30W/cm，灯丝温度为2009℃且峰值波长为1100nm的NIR辐射器以10cm的距离从硅芯片的上方照射实例6b中经干燥的夹层配置20分钟，从而进行无压烧结，其中实例6b中的IR照射过程不间断地继续进行。随后通过抗剪强度来以与实例7a相同的方式测定附着度。所测抗剪强度：23N/mm2。

Claims (14)

1.一种连接器件的方法，包括以下步骤：
(1)将含有有机溶剂的金属浆料施覆至第一器件的接触面，
(2)视情况将所述金属浆料施覆至需要与所述第一器件连接在一起的第二器件的接触面，
(3)用所述两个器件及位于其间的金属浆料层制造夹层配置，
(4)对位于所述两个器件之间的金属浆料层进行干燥，以及
(5)对包括由经干燥的金属浆料构成的层的夹层配置进行无压烧结，
其特征在于，通过用具有波长范围为750至1500nm的峰值波长的IR辐射进行照射来实施所述干燥和所述无压烧结。
2.根据权利要求1所述的方法，其中所述器件的接触面积为1至150mm2。
3.根据权利要求1或2所述的方法，其中所述器件选自由衬底、有源器件和无源器件组成的群组。
4.根据上述权利要求中任一项所述的方法，其中在步骤(1)中和视情况步骤(2)中所施覆的金属浆料含有25至90wt％的可烧结金属粒子，5至30wt％的有机溶剂，0至65wt％的金属前驱体化合物，0至5wt％的烧结助剂和0至5wt％的其他添加剂。
5.根据上述权利要求中任一项所述的方法，其中在步骤(4)期间，将所述金属浆料中最初所含的有机溶剂的95至100wt％移除。
6.根据上述权利要求中任一项所述的方法，其中所述峰值波长在750至1200nm的波长范围内。
7.根据上述权利要求中任一项所述的方法，其中单凭用所述IR辐射进行照射来引起所述干燥和所述无压烧结。
8.根据上述权利要求中任一项所述的方法，其中将一或多个工作功率为15至100W/cm的NIR辐射器用作进行所述IR辐射的辐射源。
9.根据权利要求8所述的方法，其中所述NIR辐射器的辐射器表面温度为1800至3000℃。
10.根据上述权利要求中任一项所述的方法，其中所述器件中的一个或两个针对所述IR辐射具有可透性。
11.根据权利要求10所述的方法，其中从上而下地穿过所述位于上方的针对所述IR辐射具有可透性的器件实施所述IR照射。
12.根据上述权利要求中任一项所述的方法，其中所述IR辐射源的辐射出射面与所述金属浆料的层间的距离为1至50cm。
13.根据上述权利要求中任一项所述的方法，其中在含氧或无氧气氛中实施步骤(4)和步骤(5)，其中在两种情形下，所述器件中的一个或两个具有易氧化接触面。
14.根据上述权利要求中任一项所述的方法，其中所述步骤(4)与(5)紧挨着实施。
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Application publication date: 20191206