TW201539695A - 半導體裝置及其製造方法 - Google Patents

半導體裝置及其製造方法 Download PDF

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TW201539695A
TW201539695A TW104105327A TW104105327A TW201539695A TW 201539695 A TW201539695 A TW 201539695A TW 104105327 A TW104105327 A TW 104105327A TW 104105327 A TW104105327 A TW 104105327A TW 201539695 A TW201539695 A TW 201539695A
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wire
island
lead
semiconductor device
sealing resin
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Yasuhiro Taguchi
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Seiko Instr Inc
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Abstract

本發明的課題是在於提供一種與基板的接合牢固的半導體裝置。 其解決手段是在外部導線(5)經由內部導線來與內部導線吊導線(3)電性連接之下，在外部導線切斷面(11)也形成有電鍍皮膜，在從密封樹脂(10)延伸出的外部導線全表面容易形成焊錫層。

Description

半導體裝置及其製造方法
本發明是有關使用導線架(lead frame)的半導體裝置及其製造方法。
近年來隨著攜帶型電子機器的小型化，使用在半導體裝置的半導體封裝也需要小型、薄型且確保安裝強度。作為使半導體封裝小型化的手段，有使外部端子對於基板安裝面平行拉出之表面安裝型封裝為人所知。此型的封裝是有SON(Small Outline Non-Lead Package)、QFN(Quad Flat Non-Lead Package)等。
該等的封裝若與DIP(Dual Inline Package)或SOP(Small Outline Package)作比較，則由於安裝於基板時所必要的外部電極小，因此基板安裝後的填錫形成少，有安裝強度弱的特徵。並且，該等的封裝的製造大多是使用以沖模或蝕刻之加工所作成的導線架。導線架的材料一般是使用194alloy材或銅合金。
使用導線架之半導體裝置的製造是在導線架上搭載半 導體晶片，以接線電性連接半導體晶片與導線架，進行樹脂密封加工，進行毛邊去除處理之後，對於銅面進行外裝電鍍處理。外裝電鍍處理後，以預定的尺寸從導線架切離半導體裝置。
如此因為在外裝電鍍處理後從導線架切離半導體裝置，所以在外部導線切斷面是未形成有外裝電鍍皮膜。因此，將半導體裝置安裝於基板時，會有焊錫浸潤性差的問題。為了使在該等的條件下作成的半導體封裝的安裝強度提升，而變更外部導線(outer lead)前端部之平面形狀或斷面形狀，使基板安裝後的焊錫浸潤性提升，因此容易形成填錫(solder fillet)提高安裝強度之形狀被提案(例如參照專利文獻1、2)。
〔先行技術文獻〕 〔專利文獻〕
[專利文獻1]日本特開2006-19465號公報
[專利文獻2]日本特開平7-45769號公報
然而，在半導體裝置的小型化、薄型化進展中，被要求半導體裝置的基板安裝強度的更提升。本發明是在於提供一種提高對基板的焊錫接著強度之半導體裝置及其製造方法。
為了解決上述課題，而使用以下的手段。
首先，一種半導體裝置，係由：覆蓋被載置於導線架的島上的半導體晶片之密封樹脂、及從前述密封樹脂延伸至側面的外部導線所構成，其特徵係由：與前述外部導線連接的內部導線、及連接至前述內部導線，從前述密封樹脂延伸出的內部導線吊導線、及設在前述外部導線全表面的電鍍皮膜所構成。
又，前述內部導線吊導線係從前述密封樹脂露出。
又，前述導線架係島及內部導線對於外部導線高設。
又，前述導線架係將島及外部導線設為同一高度，只將內部導線高設。
而且，使用一種半導體裝置的製造方法，該半導體裝置係由：覆蓋被載置於導線架的島上的半導體晶片之密封樹脂、及從前述密封樹脂延伸至側面的外部導線所構成，其特徵係包含：準備導線架之工程，該導線架係具備：前述島、與前述島接近的內部導線、被連接至前述內部導線的內部導線吊導線及前述外部導線、及被連接至前述島的島吊導線；將前述半導體晶片黏晶、打線接合及樹脂密封之工程；切斷前述外部導線的前端之工程；以電解電鍍在前述外部導線的切斷面形成電鍍皮膜之工程；及 切斷前述內部導線吊導線及前述島吊導線之工程。
又，在前述內部導線吊導線的切斷與切斷島吊導線之間具有電氣特性檢查工程。
若根據本發明，則在將半導體裝置安裝於基板時，在從密封樹脂露出的外部導線的全面形成厚膜焊錫層，因此在與基板之間可成為牢固的接合。
1‧‧‧導線架
2‧‧‧內部導線
3‧‧‧內部導線吊導線
4‧‧‧島吊導線
5‧‧‧外部導線
5a‧‧‧電鍍皮膜
6‧‧‧島
7‧‧‧接線
8‧‧‧糊劑
9‧‧‧半導體晶片
10‧‧‧密封樹脂
11‧‧‧外部導線切斷面
12‧‧‧電鍍皮膜
13‧‧‧焊錫層
圖1是將外部導線設為上面圖示之本發明的半導體裝置的實施例的鳥瞰圖。
圖2是沿著圖1的A-A線的斷面圖(將外部導線設為下面圖示)。
圖3是沿著圖1的B-B線的斷面圖(將外部導線設為下面圖示)。
圖4是對本發明的半導體裝置的外部導線錫焊時的斷面圖。
圖5是表示本發明的半導體裝置的實施例的製造方法的鳥瞰圖。
以下，根據圖面來說明本發明。
圖1是表示實施本發明的半導體裝置的實施例的鳥瞰 圖。在此，將外部導線5設為上側來圖示。外部導線5是具有其上面(安裝面)、端面(外部導線切斷面11)、與上面(安裝面)相向的相反面、以及分別與安裝面、相反面及外部導線切斷面11一般成直角的側面，從密封樹脂10延伸出。並且，在大致長方體的半導體裝置的側面是被切斷的內部導線吊導線3及島吊導線4的斷面會從密封樹脂10露出。
圖2是沿著圖1的A-A線的斷面圖。在此是將外部導線5設為下側來圖示，被安裝於基板時的安裝面是形成本圖的下面。在外部導線5的周圍是設有電鍍皮膜5a，基板安裝側下面、相反側的上面、側面及切斷面的端面全部是以電鍍皮膜5a所覆蓋。
圖3是沿著圖1的B-B線的斷面圖。在此是將外部導線5設為下面來圖示，被安裝於基板時的安裝面是本圖的下面。外部導線5的基板安裝面側下面、相反側的上面及外部導線切斷面11會從密封樹脂露出，外部導線的露出面全部是以電鍍皮膜5a所覆蓋。
圖4是本發明的半導體裝置錫焊於外部導線時的斷面圖。外部導線5從密封樹脂10露出的全部的面會隔著電鍍皮膜5a來以焊錫層13所覆蓋，半導體裝置與基板的連接會成為牢固者。這是因為在從密封樹脂10露出的外部導線5的全表面施以電鍍皮膜5a所致，即使露出的外部導線小，還是可成為與基板牢固的連接。
其次，說明有關本發明的半導體裝置的製造方法。
圖5是表示本發明的第1實施例的半導體裝置的製造方法的鳥瞰圖。
圖5(a)是表示本實施例的導線架1的鳥瞰圖。導線架1是包含：之後搭載半導體晶片的島6、及與島6分離配置的內部導線(inner lead)2、及與內部導線2連接的外部導線5。而且，內部導線2是藉由內部導線吊導線3來連接至導線架框，島6是藉由島吊導線4來連接至導線架框。內部導線吊導線3與內部導線2是以1對1對應，因此兩者的數量是相等。內部導線吊導線3的數量與外部導線5的數量也當然是相等。
在內部導線2與外部導線5之間是有階差部，外部導線下面會形成比內部導線下面更低。內部導線下面是形成與島下面同高度。在內部導線吊導線3及島吊導線4有折彎部，相對於與內部導線2連接的部分的內部導線吊導線3的下面，與周圍的導線架框連接的部分的內部導線吊導線3的下面是相對低。有關島吊導線4也同樣，相對於與島6連接的部分的島吊導線4的下面，與周圍的導線架框連接的部分的島吊導線4的下面是相對低。
亦即，本實施例的導線架是將島及內部導線予以高設的導線架。如此的導線架1是可藉由預定厚度的194alloy材或銅合金所構成的板材之沖模及壓模所形成。亦即，為了決定島6、內部導線2、外部導線5、內部導線吊導線3、島吊導線4的平面形狀，而進行板材的沖切。
其次，以島6、內部導線3、內部導線吊導線3及島 吊導線4的一部分對於其他的部分能夠相對地變高的方式，由下往上方進行壓模。此時，在內部導線2與外部導線5之間形成階差。同時，在內部導線吊導線3及島吊導線4也形成折彎部。
圖5(b)是打線接合(Wire Bonding)工程後的鳥瞰圖。在被成形的導線架1的島6上經由糊劑8來將半導體晶片9黏晶(Die Bonding)，其次，經由接線7來電性連接半導體晶片表面的電極焊墊與內部導線2。
圖5(c)是樹脂密封工程後的鳥瞰圖。以能夠覆蓋半導體晶片9，接線7，內部導線2、及島的露出部分之方式，用密封樹脂10密封。雖未圖示，但實際島6的下面也藉由密封樹脂10所覆蓋。外部導線5、內部導線吊導線3及島吊導線4的一部分會從密封樹脂10露出，與導線架框連接。此時，內部導線吊導線3及島吊導線4的折彎部也突出至密封樹脂10之外。
圖5(d)是外部導線切斷工程後的鳥瞰圖。從密封樹脂10的側面露出的外部導線5的前端部會被切斷，與導線架框切離，形成切斷面11。此時，在密封樹脂10的不同的側面是內部導線吊導線3及島吊導線4的一部分會從密封樹脂10露出，但為與導線架框連接的狀態。因此，導線架框與外部導線切斷面11是保持電性的連接之狀態，若在此形態下施以外裝電解電鍍，則不僅外部導線5的上面、底面、側面，連切斷面11也形成電鍍皮膜。
圖5(e)是經由外裝電鍍工程來切斷內部導線吊導 線3後的鳥瞰圖。在外部導線5的表面是形成有電鍍皮膜5a，不要的內部導線吊導線3是被切斷而與導線架框切離，但依然島吊導線4是與導線架框連接，因此複數個的半導體裝置是搭載於1片的導線架之狀態。藉由在此狀態下進行電氣特性檢查(strip test)，可成為有效率的檢查。之後，切離島吊導線4來使半導體裝置小片化而取得圖5(f)所示的形狀。
經由以上那樣的製造方法，可取得一種電鍍皮膜被形成於外部導線的全面，與基板的連接牢固之半導體裝置。
以上是舉將島及內部導線予以高設的導線架為例進行說明，但即使是使用無階差部或折彎部，其島、內部導線、外部導線及導線架框為同一高度的導線架來製造之半導體裝置也無妨。又，即使是使用將島、外部導線及導線架框設為同一高度，只將內部導線予以高設的導線架來製造之半導體裝置也無妨。
3‧‧‧內部導線吊導線
4‧‧‧島吊導線
5‧‧‧外部導線
10‧‧‧密封樹脂
11‧‧‧外部導線切斷面

Claims (7)

  1. 一種半導體裝置，係由：覆蓋被載置於導線架的島上的半導體晶片之密封樹脂、及從前述密封樹脂延伸至側面的外部導線所構成，其特徵係具備：內部導線，其係與前述外部導線連接；內部導線吊導線，其係連接至前述內部導線，從前述密封樹脂露出斷面；及島吊導線，其係連接至前述島，從前述密封樹脂露出斷面，又，前述外部導線係具有切斷面的端面，前述外部導線的安裝面、與前述安裝面相向的相反面、前述安裝面與前述相反面之間的兩側面、及前述端面係全部具有設在表面的電鍍皮膜。
  2. 如申請專利範圍第1項之半導體裝置，其中，前述內部導線吊導線的前述斷面及島吊導線的前述斷面係未具前述電鍍皮膜。
  3. 如申請專利範圍第1項之半導體裝置，其中，從前述密封樹脂露出的前述內部導線吊導線的斷面的數量與前述外部導線的數量係相等。
  4. 如申請專利範圍第1~3項中的任一項所記載之半導體裝置，其中，前述導線架係島及內部導線對於外部導線高設。
  5. 如申請專利範圍第1~3項中的任一項所記載之半導體裝置，其中，前述導線架係將島及外部導線設為同一高 度，只將內部導線高設。
  6. 一種半導體裝置的製造方法，該半導體裝置係由：覆蓋被載置於導線架的島上的半導體晶片之密封樹脂、及從前述密封樹脂延伸至側面的外部導線所構成，其特徵係包含：準備導線架之工程，該導線架係具備：前述島、與前述島接近的內部導線、被連接至前述內部導線的內部導線吊導線及前述外部導線、及被連接至前述島的島吊導線；將前述半導體晶片黏晶於前述島之工程；藉由接線來打線接合前述半導體晶片上的電極焊墊與前述內部導線之工程；以能夠覆蓋前述半導體晶片、前述接線、前述內部導線及前述島的露出部分之方式，藉由密封樹脂來樹脂密封之工程；切斷從前述密封樹脂露出的前述外部導線的前端，形成切斷面之工程；以電解電鍍在包含前述切斷面的前述外部導線形成電鍍皮膜之工程；及切斷前述內部導線吊導線及前述島吊導線之工程。
  7. 如申請專利範圍第6項之半導體裝置的製造方法，其中，具有：在前述內部導線吊導線的切斷與切斷島吊導線之間檢查電氣特性之工程。
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