TW201522676A - 濺鍍成膜裝置及濺鍍成膜方法 - Google Patents

濺鍍成膜裝置及濺鍍成膜方法 Download PDF

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Publication number
TW201522676A
TW201522676A TW103128541A TW103128541A TW201522676A TW 201522676 A TW201522676 A TW 201522676A TW 103128541 A TW103128541 A TW 103128541A TW 103128541 A TW103128541 A TW 103128541A TW 201522676 A TW201522676 A TW 201522676A
Authority
TW
Taiwan
Prior art keywords
voltage
cover
film
substrate
film formation
Prior art date
Application number
TW103128541A
Other languages
English (en)
Chinese (zh)
Inventor
Michinobu Mizumura
Original Assignee
V Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by V Technology Co Ltd filed Critical V Technology Co Ltd
Publication of TW201522676A publication Critical patent/TW201522676A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3467—Pulsed operation, e.g. HIPIMS

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
TW103128541A 2013-08-22 2014-08-20 濺鍍成膜裝置及濺鍍成膜方法 TW201522676A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013172107A JP2015040330A (ja) 2013-08-22 2013-08-22 スパッタリング成膜装置及びスパッタリング成膜方法

Publications (1)

Publication Number Publication Date
TW201522676A true TW201522676A (zh) 2015-06-16

Family

ID=52483598

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103128541A TW201522676A (zh) 2013-08-22 2014-08-20 濺鍍成膜裝置及濺鍍成膜方法

Country Status (5)

Country Link
JP (1) JP2015040330A (ja)
KR (1) KR20160045667A (ja)
CN (1) CN105492650A (ja)
TW (1) TW201522676A (ja)
WO (1) WO2015025823A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6656720B2 (ja) * 2016-01-07 2020-03-04 株式会社ジャパンディスプレイ 電極の作製方法、および電極を備える表示装置の作製方法
KR102355296B1 (ko) 2017-08-08 2022-01-25 삼성전자주식회사 반도체 메모리 장치 및 이의 제조를 위한 반도체 메모리 제조 장치
CN109652761B (zh) * 2019-01-30 2021-01-26 惠科股份有限公司 镀膜方法及镀膜装置
KR102341593B1 (ko) * 2019-11-28 2021-12-21 가부시키가이샤 알박 성막 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09310167A (ja) * 1996-05-21 1997-12-02 Toshiba Corp 枚葉式マグネトロンスパッタリング装置
JP2005240081A (ja) * 2004-02-25 2005-09-08 Matsushita Electric Ind Co Ltd プラスチックフィルム成膜装置
CN101271869B (zh) 2007-03-22 2015-11-25 株式会社半导体能源研究所 发光器件的制造方法
CN102202992A (zh) * 2008-11-14 2011-09-28 东京毅力科创株式会社 基板处理系统
JP5424972B2 (ja) * 2010-04-23 2014-02-26 株式会社アルバック 真空蒸着装置
JP2012132053A (ja) * 2010-12-21 2012-07-12 Panasonic Corp スパッタリング装置およびスパッタリング方法

Also Published As

Publication number Publication date
KR20160045667A (ko) 2016-04-27
JP2015040330A (ja) 2015-03-02
CN105492650A (zh) 2016-04-13
WO2015025823A1 (ja) 2015-02-26

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