TW201520295A - Adhesive tape for cutting and manufacturing method of semiconductor chips - Google Patents
Adhesive tape for cutting and manufacturing method of semiconductor chips Download PDFInfo
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- TW201520295A TW201520295A TW103124750A TW103124750A TW201520295A TW 201520295 A TW201520295 A TW 201520295A TW 103124750 A TW103124750 A TW 103124750A TW 103124750 A TW103124750 A TW 103124750A TW 201520295 A TW201520295 A TW 201520295A
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/04—Polysiloxanes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- Engineering & Computer Science (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Dicing (AREA)
Abstract
Description
本發明，係有關於使用於元件基板的切割之切割用黏著帶、及使用了切割用黏著帶的半導體晶片之製造方法。 The present invention relates to a dicing adhesive tape for use in dicing a component substrate, and a method of manufacturing a semiconductor wafer using a dicing adhesive tape.
歷來，在為了製作具有LED(light emitting diode)等之半導體晶片而使用的切割用黏著帶方面，已知悉具有由丙烯酸系樹脂所成之接著劑層的黏著帶(參照專利文獻1)。 In the past, an adhesive tape having an adhesive layer made of an acrylic resin has been known for the production of an adhesive tape for a semiconductor wafer having a light-emitting diode or the like (see Patent Document 1).
此外，在使用切割用黏著帶而製作半導體晶片之方法方面，已知悉如下方法：在形成有複數個半導體元件之半導體元件基板的基板側黏貼黏著帶，藉切割機而切斷半導體元件基板(參照專利文獻2)。 Further, in the method of producing a semiconductor wafer by using an adhesive tape for dicing, a method is known in which an adhesive tape is adhered to a substrate side of a semiconductor element substrate on which a plurality of semiconductor elements are formed, and a semiconductor element substrate is cut by a cutter (refer to Patent Document 2).
〔專利文獻1〕日本發明專利公開2013-38408號公報 [Patent Document 1] Japanese Patent Publication No. 2013-38408
〔專利文獻2〕日本發明專利公開2005-93503號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2005-93503
然而，近年來，在切斷半導體元件基板以製作半導體晶片之情況下，已有提議如下技術：並非在半導體元件基板的基板側而是在密封樹脂側黏貼黏著帶而進行切割。 However, in recent years, in the case of cutting a semiconductor element substrate to produce a semiconductor wafer, there has been proposed a technique in which an adhesive tape is adhered to the sealing resin side instead of the substrate side of the semiconductor element substrate.
如此，對於半導體元件基板從密封樹脂側黏貼黏著帶之情況下，存在如下情況：黏著力不足，發生半導體晶片之飛散等。 As described above, in the case where the semiconductor element substrate is adhered to the adhesive tape from the side of the sealing resin, there is a case where the adhesive force is insufficient, and scattering of the semiconductor wafer or the like occurs.
本發明，係目的在於提供：對於形成有被藉密封樹脂而密封的複數個半導體元件之元件基板而言具有良好的黏著性之切割用黏著帶、及使用了此的半導體晶片之製造方法。 An object of the present invention is to provide a dicing adhesive tape which has good adhesion to an element substrate in which a plurality of semiconductor elements sealed by a sealing resin is formed, and a method of manufacturing a semiconductor wafer using the same.
在相關目的之下，本發明的切割用黏著帶，係在將形成有被藉密封樹脂而密封的複數個半導體元件之元件基板分割成複數個半導體晶片時所使用之切割用黏著帶，特徵在於：具備：基材；及積層於前述基材上，包含固化型的聚矽氧系黏著劑及固化劑之黏著劑層。 The adhesive tape for dicing of the present invention is a dicing adhesive tape used for dividing an element substrate on which a plurality of semiconductor elements sealed by a sealing resin is formed into a plurality of semiconductor wafers. And comprising: a substrate; and an adhesive layer laminated on the substrate and comprising a curable polyoxygen-based adhesive and a curing agent.
於此，可採取：對於前述元件基板，從由聚矽氧樹脂所成之前述密封樹脂側作黏貼而使用。此外，可採取：前述黏著劑層係包含過氧化物固化型聚矽氧黏著劑、及由過 氧化物所成之起始劑。再者，可採取：前述起始劑的含有量，相對於前述過氧化物固化型聚矽氧黏著劑100重量份，為0.01重量份~15重量份的範圍。再且，可採取：前述黏著劑層係包含加成反應型聚矽氧黏著劑、交聯劑、及觸媒。此外，可採取：前述交聯劑的含有量，相對於前述加成反應型聚矽氧黏著劑100重量份，為0.05重量份~10重量份的範圍。 Here, the element substrate may be used by being adhered to the side of the sealing resin made of a polyoxyxylene resin. In addition, it can be adopted that the adhesive layer comprises a peroxide-curable polyoxygen adhesive, and The initiator of the oxide. In addition, the content of the above-mentioned initiator may be in the range of 0.01 part by weight to 15 parts by weight based on 100 parts by weight of the peroxide-curable polyadhesive pressure-sensitive adhesive. Further, the adhesive layer may include an addition reaction type polyoxyxylene adhesive, a crosslinking agent, and a catalyst. In addition, the content of the crosslinking agent may be in the range of 0.05 part by weight to 10 parts by weight based on 100 parts by weight of the addition reaction type polyoxyxylene adhesive.
再者將本發明作為半導體晶片之製造方法而掌握時，本發明的半導體晶片之製造方法，係包含：將複數個半導體元件被形成於基板上之元件基板的該複數個半導體元件以由聚矽氧樹脂所成之密封樹脂作密封的密封程序；將具備基材與包含固化型的聚矽氧系黏著劑及固化劑之黏著劑層的黏著帶，對於前述元件基板，從前述密封樹脂側作黏貼之黏貼程序；將黏貼了前述黏著帶之前述元件基板，切斷成複數個半導體晶片之切斷程序；及從前述複數個半導體晶片，剝下前述黏著帶之剝離程序。 Further, when the present invention is grasped as a method of manufacturing a semiconductor wafer, the method for fabricating a semiconductor wafer of the present invention includes: a plurality of semiconductor elements in which a plurality of semiconductor elements are formed on an element substrate on a substrate a sealing process for sealing a sealing resin made of an oxyresin; and an adhesive tape comprising a substrate and an adhesive layer containing a curable polyoxygen-based adhesive and a curing agent, and the element substrate is made from the side of the sealing resin a pasting process for adhering; a cutting process of cutting the plurality of semiconductor wafers by bonding the element substrate of the adhesive tape; and peeling off the adhesive tape from the plurality of semiconductor wafers.
依本發明，即可提供：對於形成有被藉密封樹脂而密封的複數個半導體元件之元件基板而言具有良好的黏著性之切割用黏著帶、及使用了此的半導體晶片之製造方法。 According to the present invention, it is possible to provide an adhesive tape for dicing which has good adhesion to an element substrate on which a plurality of semiconductor elements sealed by a sealing resin is formed, and a method of manufacturing a semiconductor wafer using the same.
1‧‧‧黏著帶 1‧‧‧Adhesive tape
2‧‧‧基材 2‧‧‧Substrate
3‧‧‧黏著劑層 3‧‧‧Adhesive layer
〔圖1〕繪示了適用本實施形態之黏著帶的構成之一例的圖。 Fig. 1 is a view showing an example of a configuration of an adhesive tape to which the embodiment is applied.
〔圖2〕(a)~(d)，係繪示了使用了適用本實施形態之黏著帶的半導體晶片之製造方法的圖。 (Fig. 2) (a) to (d) are views showing a method of manufacturing a semiconductor wafer to which the adhesive tape of the present embodiment is applied.
以下，說明有關於本發明的實施形態。 Hereinafter, embodiments of the present invention will be described.
圖1，係繪示了適用本實施形態之黏著帶1的構成之一例的圖。本實施形態之黏著帶1，係使用於如下用途：形成有被以密封樹脂而密封的複數個半導體元件之半導體元件基板的切割。具體而言，本實施形態之黏著帶1，係對於半導體元件基板，從由聚矽氧系樹脂所成之密封樹脂側作黏貼，從而使用於切割。另外，關於黏著帶1之使用方法，係在後段詳細作說明。 Fig. 1 is a view showing an example of a configuration of an adhesive tape 1 to which the embodiment is applied. The adhesive tape 1 of the present embodiment is used for cutting a semiconductor element substrate in which a plurality of semiconductor elements sealed by a sealing resin are formed. Specifically, the adhesive tape 1 of the present embodiment is used for the dicing of the semiconductor element substrate from the side of the sealing resin made of the polyoxymethylene resin. Further, the method of using the adhesive tape 1 will be described in detail later.
如圖1所示，本實施形態之黏著帶1，係具有：積層了基材2與黏著劑層3之構造。 As shown in Fig. 1, the adhesive tape 1 of the present embodiment has a structure in which a base material 2 and an adhesive layer 3 are laminated.
另外，圖示雖省略，黏著帶1係亦可在基材2與黏著劑層3之間依所需而具備錨固塗(anchor coat)層。此外，亦可在基材2的表面(對向於黏著劑層3之面的相反側之面)，實施了表面處理。再者，亦可在黏著劑層3的表面(對向於基材2之面的相反側之面)，具備了剝離膜 (liner)。 Further, although the illustration is omitted, the adhesive tape 1 may be provided with an anchor coat layer between the base material 2 and the adhesive layer 3 as needed. Further, a surface treatment may be applied to the surface of the substrate 2 (the surface opposite to the surface facing the adhesive layer 3). Further, a release film may be provided on the surface of the adhesive layer 3 (the surface opposite to the surface facing the substrate 2). (liner).
使用於本實施形態之黏著帶1的基材2之材料，係非特別限定者，例如可採用金屬製、塑膠製等。具體而言，在基材2方面，例如可採用：不鏽鋼、軟質鋁等之金屬箔、和聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯、聚萘二甲酸乙二酯、聚苯硫醚、雙軸拉伸聚丙烯、聚醯亞胺、芳香族聚醯胺、環烯烴、氟系樹脂等之樹脂膜。此外，依用途在基材2方面，係例如亦可採用：積層了鋁箔與樹脂膜之複合膜、礬土、將二氧化矽等之金屬氧化物薄膜形成於樹脂膜的表面之複合膜、及將此等之複合膜進一步與樹脂膜作了積層的複合膜等。 The material of the base material 2 used in the adhesive tape 1 of the present embodiment is not particularly limited, and may be, for example, metal or plastic. Specifically, as the substrate 2, for example, a metal foil such as stainless steel or soft aluminum, and polyethylene terephthalate, polybutylene terephthalate or polyethylene naphthalate may be used. A resin film of polyphenylene sulfide, biaxially oriented polypropylene, polyimine, aromatic polyamine, cycloolefin, or fluorine-based resin. Further, in the case of the substrate 2, for example, a composite film in which an aluminum foil and a resin film are laminated, alumina, a metal oxide film such as cerium oxide, or a composite film formed on the surface of the resin film, and A composite film or the like in which the composite film is further laminated with a resin film.
此等之中，在基材2方面，係採用以聚對苯二甲酸乙二酯作為主成分之材料較佳。 Among these, in the case of the substrate 2, a material containing polyethylene terephthalate as a main component is preferably used.
本實施形態之黏著劑層3，係包含以下而構成：固化型的聚矽氧系黏著劑、及供以將此聚矽氧系黏著劑予以固化用的固化劑。此外，黏著劑層3，係亦可依所需而包含著色劑等。 The adhesive layer 3 of the present embodiment comprises a curable polyoxynoxy adhesive and a curing agent for curing the polyoxygen adhesive. Further, the adhesive layer 3 may contain a coloring agent or the like as needed.
黏著劑層3的厚度，係5μm~50μm的範圍較佳，20μm~40μm的範圍更佳。在黏著劑層3的厚度不足5μm之情況下，係含於黏著劑層3之聚矽氧系黏著劑會變薄， 故黏著帶1之黏著力容易降低。另一方面，在黏著劑層3的厚度厚於50μm之情況下，係容易發生黏著劑層3的聚力失效，在採用了如此之黏著帶1的情況下，係在剝下黏著帶1時，容易產生黏著劑仍附著於被黏物而殘留之黏劑殘物。 The thickness of the adhesive layer 3 is preferably in the range of 5 μm to 50 μm, and more preferably in the range of 20 μm to 40 μm. In the case where the thickness of the adhesive layer 3 is less than 5 μm, the polyoxygen-based adhesive contained in the adhesive layer 3 is thinned. Therefore, the adhesive force of the adhesive tape 1 is easily lowered. On the other hand, in the case where the thickness of the adhesive layer 3 is thicker than 50 μm, the aggregation failure of the adhesive layer 3 is liable to occur, and in the case where such an adhesive tape 1 is used, the adhesive tape 1 is peeled off. It is easy to produce an adhesive residue that remains adhered to the adherend by the adhesive.
於此，在本實施形態之黏著劑層3方面，係在固化型的聚矽氧系黏著劑方面，可採用過氧化物固化型聚矽氧系黏著劑或加成反應型聚矽氧系黏著劑。 Here, in the adhesive layer 3 of the present embodiment, a peroxide-curable polyfluorene-based adhesive or an addition-reactive polyoxygen-based adhesive may be used for the curable polyadoxic adhesive. Agent.
以下，以採用過氧化物固化型聚矽氧系黏著劑之情況作為黏著劑層3的第1形態、以採用加成反應型聚矽氧系黏著劑之情況作為黏著劑層3的第2形態，而依序作說明。 In the following, the case where the peroxide-curable polyadhesive-based adhesive is used is the first embodiment of the adhesive layer 3, and the case where the addition-reaction type polyoxynoxy adhesive is used as the second form of the adhesive layer 3 And in order to explain.
第1形態的黏著劑層3，係包含以下而構成：過氧化物固化型聚矽氧系黏著劑、及由過氧化物所構成之起始劑(固化劑)。 The pressure-sensitive adhesive layer 3 of the first embodiment comprises a peroxide-curable polyoxygen-based pressure-sensitive adhesive and a starter (curing agent) composed of a peroxide.
過氧化物固化型聚矽氧系黏著劑，係例如聚二甲基矽氧烷等之有機聚矽氧烷與有機聚矽氧烷共聚合樹脂的有機聚矽氧烷混合物作為主劑之黏著劑。 The peroxide-curable polyoxynoxy adhesive is an adhesive of a mixture of an organic polyoxane of a polyorganosiloxane such as polydimethyl siloxane and an organic polyoxyalkylene copolymer resin as a main component. .
在過氧化物固化型聚矽氧系黏著劑方面，係非特別限定者，例如可採用：信越化學工業股份有限公司製的 KR100、KR101-10、Momentive Performance Materials公司製的YR3340、YR3286、PSA610-SM、XR37-B6722、東麗道康寧股份有限公司製的SH4280等。 The peroxide-curable polyadoxic adhesive is not particularly limited, and for example, it can be used by Shin-Etsu Chemical Co., Ltd. KR100, KR101-10, YR3340, YR3286, PSA610-SM, XR37-B6722, manufactured by Momentive Performance Materials, SH4280 manufactured by Toray Dow Corning Co., Ltd., etc.
在由過氧化物所成之起始劑方面，係採用有機過氧化物。在作為起始劑而使用之有機過氧化物方面，係非特別限定者，舉例如：過氧化苯甲醯、過氧化二異丙苯、2,5-二甲基-2,5-二(t-過氧化)己烷、1,1'-二-t-過氧化-3,3,5-三亞甲基環己烷、1,3-二-(t-過氧化)-二異丙苯等，在市售品方面，係舉例如：日油股份有限公司製的NYPERK40等。 In the case of an initiator derived from a peroxide, an organic peroxide is used. The organic peroxide used as the initiator is not particularly limited, and examples thereof include benzamidine peroxide, dicumyl peroxide, and 2,5-dimethyl-2,5-di ( T-peroxide) hexane, 1,1 ' -di-t-peroxide-3,3,5-trimethylenecyclohexane, 1,3-di-(t-peroxide)-diisopropylbenzene For example, in the case of commercial products, for example, NYPERK40 manufactured by Nippon Oil Co., Ltd., and the like.
於此，第1形態的黏著劑層3中之起始劑(有機過氧化物)的含有量，係相對於過氧化物固化型聚矽氧系黏著劑100重量份，0.01重量份~15重量份的範圍較佳，0.05重量份~10重量份的範圍更佳，0.05重量份~3.5重量份的範圍再更佳。 Here, the content of the initiator (organic peroxide) in the pressure-sensitive adhesive layer 3 of the first embodiment is 0.01 parts by weight to 15 parts by weight based on 100 parts by weight of the peroxide-curable polyfluorene-based pressure-sensitive adhesive. The range of parts is preferably from 0.05 parts by weight to 10 parts by weight, more preferably from 0.05 parts by weight to 3.5 parts by weight.
相對於過氧化物固化型聚矽氧系黏著劑之起始劑的含有量採取上述之範圍，使得可使黏著劑層3的黏著力及保持力為作為切割用的黏著帶1較佳之範圍。 The content of the initiator of the peroxide-curable polyadoxic adhesive is in the above range, so that the adhesive force and the holding force of the adhesive layer 3 can be made into a preferable range as the adhesive tape 1 for cutting.
另一方面，在相對於過氧化物固化型聚矽氧系黏著劑之起始劑的含有量過小之情況下，係於黏著劑層 3過氧化物固化型聚矽氧系黏著劑未充分固化，而存在無法獲得期望的黏著力之情形。此外，在過氧化物固化型聚矽氧系黏著劑未充分固化之情況下，係於黏著劑層3變得容易發生聚力失效。此結果，將黏著帶1使用於半導體元件基板的切割之後，在從所獲得之半導體晶片剝下黏著帶1時，變得容易產生黏劑殘物。 On the other hand, in the case where the content of the initiator of the peroxide-curable polyoxygen-based adhesive is too small, it is attached to the adhesive layer. 3 The peroxide-curable polyoxynoxy adhesive is not sufficiently cured, and there is a case where a desired adhesive force cannot be obtained. Further, in the case where the peroxide-curable polyadhesive-based adhesive is not sufficiently cured, the adhesive layer 3 is liable to cause aggregation failure. As a result, after the adhesive tape 1 is used for dicing the semiconductor element substrate, when the adhesive tape 1 is peeled off from the obtained semiconductor wafer, the adhesive residue is likely to be generated.
在相對於過氧化物固化型聚矽氧系黏著劑之起始劑的含有量過大之情況下，係過氧化物固化型聚矽氧系黏著劑的固化反應過度進行，故黏著劑層3變硬，變成黏著帶1之黏著力容易降低。然後，在將此黏著帶1使用於切割之情況下，係變成在切斷半導體元件基板時，是切斷片的半導體晶片容易從黏著帶1剝離而飛散。 When the content of the initiator of the peroxide-curable polyadhesive-based adhesive is excessively large, the curing reaction of the peroxide-curable polyadhesive-based adhesive is excessively performed, so that the adhesive layer 3 is changed. Hard, the adhesive force of the adhesive tape 1 is easily lowered. When the adhesive tape 1 is used for dicing, the semiconductor wafer which is a cut piece is easily peeled off from the adhesive tape 1 and scattered when the semiconductor element substrate is cut.
接著，第2形態的黏著劑層3，係在聚矽氧系黏著劑方面包含加成反應型聚矽氧系黏著劑，同時在固化劑方面，包含交聯劑及觸媒而構成。此外，在第2形態的黏著劑層3方面，亦可包含供以抑制加成反應型聚矽氧系黏著劑之急劇的加成反應之進行用的反應控制材而構成。 Next, the adhesive layer 3 of the second embodiment includes an addition reaction type polyoxynoxy adhesive in terms of a polyoxygen-based adhesive, and a crosslinking agent and a catalyst are included in the curing agent. In addition, the pressure-sensitive adhesive layer 3 of the second embodiment may be configured to contain a reaction control material for suppressing the rapid addition reaction of the addition reaction type polyoxynoxy adhesive.
加成反應型聚矽氧系黏著劑，係以在1分子中含有至少2個矽鍵結烯基的聚二甲基矽氧烷等之有機聚矽氧烷作為主劑的黏著劑。另外，在含於加成反應型聚矽氧系黏著 劑之有機聚矽氧烷的分子構造方面，係例示：直鏈狀、一部分具有支鏈之直鏈狀、支鏈狀、網狀。 The addition-reaction type polyoxo-based adhesive is an adhesive containing a polyorganosiloxane such as polydimethyl siloxane having at least two fluorenyl alkenyl groups in one molecule as a main component. In addition, it is contained in an addition reaction type polyoxo system. The molecular structure of the organopolyoxane of the agent is exemplified by a linear chain, a part of a linear chain having a branch, a branched chain, and a network.
此外，在含於加成反應型聚矽氧系黏著劑之有機聚矽氧烷所含有的烯基方面，係例示乙烯基、丙烯基、丁烯基、戊烯基、己烯基，尤其較佳為乙烯基。 Further, in the case of the alkenyl group contained in the organopolyoxane contained in the addition-reactive polyoxo-based adhesive, a vinyl group, a propenyl group, a butenyl group, a pentenyl group, a hexenyl group, and the like are exemplified. Good for vinyl.
在加成反應型聚矽氧系黏著劑方面，係非特別限定者，舉例如：信越化學工業股份有限公司製的KR3700、KR3701、X-40-3237-1、X-40-3240、X-40-3291-1、X-40-3229、X-40-3270、X-40-3306、Momentive Performance Materials公司製的TSR1512、TSR1516、XR37-B9204、東麗道康寧股份有限公司製的SD4580、SD4584、SD4585、SD4586、SD4587、SD4560、SD4570、SD4600PFC、SD4593、DC7651ADHESIVE等。 In addition, the addition reaction type poly-oxygen-based adhesive is not particularly limited, and for example, KR3700, KR3701, X-40-3237-1, X-40-3240, X- manufactured by Shin-Etsu Chemical Co., Ltd. 40-3291-1, X-40-3229, X-40-3270, X-40-3306, TSR1512, TSR1516, XR37-B9204 manufactured by Momentive Performance Materials, SD4580 and SD4584 manufactured by Toray Dow Corning Co., Ltd. SD4585, SD4586, SD4587, SD4560, SD4570, SD4600PFC, SD4593, DC7651ADHESIVE, etc.
於加成反應型聚矽氧系黏著劑的反應，係在交聯劑方面，使用在1分子中具有至少2個矽鍵結氫原子之有機聚矽氧烷。 In the reaction of the addition reaction type polyoxo-based adhesive, an organopolysiloxane having at least two hydrazine-bonded hydrogen atoms in one molecule is used as the crosslinking agent.
在作為交聯劑而使用之有機聚矽氧烷的分子構造方面，係例示：直鏈狀、一部分具有支鏈之直鏈狀、支鏈狀、環狀、網狀。 The molecular structure of the organopolyoxane used as the crosslinking agent is, for example, a linear chain, a part of a linear chain having a branch, a branch, a ring, or a mesh.
在使用於加成反應型聚矽氧系黏著劑的反應之交聯劑方面，係非特別限定者，舉例如：信越化學股份有限公司製的X-92-122、東麗道康寧股份有限公司製的BY24-741 等。 The cross-linking agent for the reaction of the addition-reaction-type polyoxo-based adhesive is not particularly limited, and examples thereof include X-92-122 manufactured by Shin-Etsu Chemical Co., Ltd. and manufactured by Toray Dow Corning Co., Ltd. BY24-741 Wait.
於加成反應型聚矽氧系黏著劑的反應，係使用供以將加成反應型聚矽氧系黏著劑與交聯劑之加成反應(矽氫化)所引起之固化予以促進用的觸媒。 The reaction of the addition-reaction type polyoxo-based adhesive is carried out by using a curing reaction by an addition reaction (hydrogenation) of an addition reaction-type polyoxygen-based adhesive and a crosslinking agent. Media.
在觸媒方面，係使用：鉑系觸媒、銠系觸媒、鈀系觸媒等之周知的矽氫化反應用觸媒。此等之觸媒之中，尤其鉑細粉末、鉑黑、鉑支撐二氧化矽細粉末、鉑支撐活性碳、氯鉑酸、氯鉑酸的酒精溶液、鉑的烯烴錯合物、鉑的烯基矽氧烷錯合物等之鉑系觸媒由於反應速度為良好因而較佳。 In the case of a catalyst, a known catalyst for hydrogenation reaction such as a platinum-based catalyst, a ruthenium-based catalyst, or a palladium-based catalyst is used. Among these catalysts, especially platinum fine powder, platinum black, platinum supported ruthenium dioxide fine powder, platinum supported activated carbon, chloroplatinic acid, chloroplatinic acid alcohol solution, platinum olefin complex, platinum alkene The platinum-based catalyst such as a sulfoxane complex or the like is preferred because the reaction rate is good.
在使用於加成反應型聚矽氧系黏著劑的反應之觸媒方面，係非特別限定者，舉例如：信越化學工業股份有限公司製的CAT-PL-50T、東麗道康寧股份有限公司製的SRX-212Cat、NC-25等。 The catalyst used for the reaction of the addition-reaction type polyoxo-based adhesive is not particularly limited, and is, for example, CAT-PL-50T manufactured by Shin-Etsu Chemical Co., Ltd., manufactured by Toray Dow Corning Co., Ltd. SRX-212Cat, NC-25, etc.
作為在第2形態的黏著劑層3方面依所需而使用之反應控制劑，係非特別限定者，舉例如：信越化學工業股份有限公司製的CAT-PLR-2、和東麗道康寧股份有限公司製的BY24-808等。 The reaction control agent to be used as needed in the adhesive layer 3 of the second embodiment is not particularly limited, and examples thereof include CAT-PLR-2 manufactured by Shin-Etsu Chemical Co., Ltd., and Toray Dow Corning Co., Ltd. Company-made BY24-808 and so on.
於此，第2形態的黏著劑層3中之交聯劑的含有量，係相對於加成反應型聚矽氧系黏著劑100重量份，0.05重量份~10重量份的範圍較佳，0.1重量份~7重量份的範圍更佳，0.1重量份~2重量份的範圍再更佳。 Here, the content of the crosslinking agent in the pressure-sensitive adhesive layer 3 of the second embodiment is preferably in the range of 0.05 part by weight to 10 parts by weight, based on 100 parts by weight of the addition reaction type polyfluorene-based pressure-sensitive adhesive. The range of parts by weight to 7 parts by weight is more preferably, and the range of from 0.1 part by weight to 2 parts by weight is more preferably.
相對於加成反應型聚矽氧系黏著劑之交聯劑的含有量採取上述之範圍，使得可使黏著劑層3的黏著力及保持力為作為切割用的黏著帶1較佳之範圍。 The content of the crosslinking agent with respect to the addition reaction-type polyoxo-based adhesive is in the above range, so that the adhesive force and the holding force of the adhesive layer 3 can be made into a preferable range as the adhesive tape 1 for cutting.
另一方面，在相對於加成反應型聚矽氧系黏著劑之交聯劑的含有量過小之情況下，係於黏著劑層3方面交聯反應未充分進行，而存在無法獲得期望的黏著力之情形。此外，在加成反應型聚矽氧系黏著劑的交聯反應未充分進行之情況下，係於黏著劑層3變得容易發生聚力失效。此結果，將黏著帶1使用於半導體元件基板的切割之後，在從所獲得之半導體晶片剝下黏著帶1時，變得容易產生黏劑殘物。 On the other hand, when the content of the crosslinking agent with respect to the addition reaction type polyoxo-based adhesive is too small, the crosslinking reaction is not sufficiently performed in the adhesive layer 3, and the desired adhesion cannot be obtained. The situation of force. Further, when the crosslinking reaction of the addition reaction type polyoxo-based adhesive is not sufficiently performed, the adhesion layer 3 is liable to cause aggregation failure. As a result, after the adhesive tape 1 is used for dicing the semiconductor element substrate, when the adhesive tape 1 is peeled off from the obtained semiconductor wafer, the adhesive residue is likely to be generated.
再者，在相對於加成反應型聚矽氧系黏著劑之交聯劑的含有量過大之情況下，係加成反應型聚矽氧系黏著劑的交聯反應過度進行，故黏著劑層3變硬，變成黏著帶1之黏著力容易降低。然後，在將此黏著帶1使用於切割之情況下，係變成在切斷半導體元件基板時，是切斷片的半導體晶片容易從黏著帶1剝離而飛散。 In addition, when the content of the crosslinking agent with respect to the addition reaction-type polyoxo-based adhesive is too large, the crosslinking reaction of the addition-reaction type polyoxo-based adhesive is excessive, so the adhesive layer 3 becomes hard, and the adhesion to the adhesive tape 1 is easily lowered. When the adhesive tape 1 is used for dicing, the semiconductor wafer which is a cut piece is easily peeled off from the adhesive tape 1 and scattered when the semiconductor element substrate is cut.
此外，第2形態的黏著劑層3中之觸媒的含有量，係非特別限定者，例如可採取：相對於加成反應型聚矽氧系黏著劑100重量份，0.01重量份~5重量份程 度。 In addition, the content of the catalyst in the adhesive layer 3 of the second embodiment is not particularly limited, and may be, for example, 0.01 parts by weight to 5 parts by weight based on 100 parts by weight of the addition reaction type polyoxynoxy adhesive. Part degree.
如上所述，在本實施形態之黏著帶1，係亦可依黏著帶1之製造條件和製造後之黏著帶1的使用條件等，而在基材2與黏著劑層3之間，設置配合了基材的種類之錨固塗層，或實施電暈處理等之表面處理。藉此，變得可使基材2與黏著劑層3之密著力改善。 As described above, in the adhesive tape 1 of the present embodiment, it is possible to provide a fit between the substrate 2 and the adhesive layer 3 depending on the manufacturing conditions of the adhesive tape 1 and the use conditions of the adhesive tape 1 after the production. An anchor coating of the type of the substrate or a surface treatment such as corona treatment. Thereby, the adhesion between the substrate 2 and the adhesive layer 3 can be improved.
在基材2的表面(對向於黏著劑層3之面的相反側之面)，係亦可實施了剝離性改良處理等之表面處理。在使用於基材2的表面處理之處理劑方面，係非特別限定者，例如可採用：長鏈烷基乙烯基單體聚合物、氟化烷基乙烯基單體聚合物、聚乙烯醇氨基甲酸酯、胺基醇酸系樹脂等之非聚矽氧系的剝離處理劑等。在如此之非聚矽氧系的剝離處理劑方面，係舉例如：IPPOSHA OIL INDUSTRIES股份有限公司製的PEELOIL1050、PEELOIL1200等。 On the surface of the substrate 2 (the surface opposite to the surface facing the adhesive layer 3), a surface treatment such as a peeling-improving treatment may be performed. The treatment agent for the surface treatment of the substrate 2 is not particularly limited, and for example, a long-chain alkyl vinyl monomer polymer, a fluorinated alkyl vinyl monomer polymer, or a polyvinyl alcohol amino group can be used. A non-polyoxyl-based release treatment agent such as a formate or an amino alkyd resin. For example, PEELOIL 1050, PEELOIL 1200, and the like manufactured by IPPOSHA OIL INDUSTRIES Co., Ltd. are used in the non-polyoxyl-based release treatment agent.
此外，在黏著劑層3的表面(對向於基材2之面的相反側之面)，係亦可依所需而設置剝離膜。在剝離膜方面，係可採用如下者：對於紙、聚乙烯、聚丙烯、聚對苯二甲酸乙二酯等之膜，實施了供以提高與含於黏著劑層3 之聚矽氧系黏著劑的離型性用之剝離處理。在使用於剝離膜的剝離處理之材料方面，係不特別作限定，可採用例如：氟矽、長鏈烷基乙烯基單體聚合物、胺基醇酸系樹脂等之材料。 Further, on the surface of the adhesive layer 3 (the surface opposite to the surface facing the substrate 2), a release film may be provided as needed. In the case of the release film, a film, a polyethylene, a polypropylene, a polyethylene terephthalate or the like may be provided for improvement and inclusion in the adhesive layer 3 The release property of the polyoxygenated adhesive is used for the release treatment. The material used for the release treatment of the release film is not particularly limited, and examples thereof include materials such as fluoroindene, a long-chain alkyl vinyl monomer polymer, and an amino alkyd resin.
具有如以上所說明之構成的黏著帶1之整體上的厚度，係20μm~200μm的範圍較佳。 The thickness of the entire adhesive tape 1 having the above-described configuration is preferably in the range of 20 μm to 200 μm.
在黏著帶1之厚度薄於20μm之情況下，係在將黏著帶1使用於半導體元件基板的切割時，存在變得難以將所形成之半導體晶片從黏著帶1剝除的情形。 When the thickness of the adhesive tape 1 is thinner than 20 μm, it is difficult to remove the formed semiconductor wafer from the adhesive tape 1 when the adhesive tape 1 is used for dicing the semiconductor element substrate.
此外，在黏著帶1之厚度厚於200μm之情況下，係在將黏著帶1從半導體元件基板的密封樹脂側作黏貼時，變得黏著帶1難以追隨密封樹脂的凹凸。此結果，黏著帶1與密封樹脂之接著面積變小，在切割時存在半導體晶片變得容易飛散之虞。 In addition, when the thickness of the adhesive tape 1 is thicker than 200 μm, when the adhesive tape 1 is pasted from the sealing resin side of the semiconductor element substrate, it becomes difficult for the adhesive tape 1 to follow the unevenness of the sealing resin. As a result, the adhesion area of the adhesive tape 1 and the sealing resin becomes small, and there is a possibility that the semiconductor wafer becomes easy to scatter at the time of cutting.
接著，說明有關於本實施形態之黏著帶1的製造方法。 Next, a method of manufacturing the adhesive tape 1 of the present embodiment will be described.
另外，在具有含有上述之第1形態的過氧化物固化型聚矽氧系黏著劑之黏著劑層3的黏著帶1、及具有含有上述之第2形態的加成反應型聚矽氧系黏著劑之黏著劑層3的黏著帶1方面，係可藉同樣的製造方法而製造。 Further, the adhesive tape 1 having the adhesive layer 3 containing the peroxide-curable polyoxygen-based adhesive of the first embodiment described above and the addition-reactive polyoxygen-based adhesive having the second embodiment described above The adhesive tape 1 of the adhesive layer 3 of the agent can be produced by the same manufacturing method.
在製造黏著帶1時，係首先，於甲苯或乙酸乙酯等之通用的有機溶劑，將固化型的聚矽氧系黏著劑及固化劑予以溶解，獲得黏著劑溶液。接著，將此黏著劑溶液，在依所需而進行了表面處理或錨固塗層的形成之基材2的表面，使用逗點形刮刀塗布機等而以成為既定的厚度之方式作塗布。 When the pressure-sensitive adhesive tape 1 is produced, first, a curable polyoxynoxy-based adhesive and a curing agent are dissolved in a common organic solvent such as toluene or ethyl acetate to obtain an adhesive solution. Next, the adhesive solution is applied to the surface of the substrate 2 which is subjected to surface treatment or formation of an anchor coating layer as needed, and is applied to have a predetermined thickness using a comma-shaped blade coater or the like.
然後，將塗布了黏著劑溶液之基材2，在60℃~160℃之溫度下，加熱數分鐘~數十分鐘程度，從而將黏著劑溶液予以固化，形成黏著劑層3。 Then, the substrate 2 coated with the adhesive solution is heated at a temperature of 60 ° C to 160 ° C for several minutes to several tens of minutes to cure the adhesive solution to form the adhesive layer 3 .
藉以上的程序，如圖1所示，可獲得在基材2之上積層了黏著劑層3之黏著帶1。 By the above procedure, as shown in FIG. 1, the adhesive tape 1 in which the adhesive layer 3 is laminated on the substrate 2 can be obtained.
如上所述，本實施形態之黏著帶1，係使用於半導體元件基板的切割。於此，半導體元件基板，係指如下者：在樹脂等之基板上，形成複數個LED(Light emitting diode)等之半導體元件。另外，在如此之半導體元件基板方面，係通常，為了保護半導體元件受到溫度或濕度等之外部環境的變化之影響，而以覆蓋半導體元件的方式設有密封樹脂。 As described above, the adhesive tape 1 of the present embodiment is used for cutting a semiconductor element substrate. Here, the semiconductor element substrate refers to a semiconductor element such as a plurality of LEDs (Light Emitting Diodes) formed on a substrate such as a resin. Further, in such a semiconductor element substrate, in general, in order to protect the semiconductor element from changes in the external environment such as temperature or humidity, a sealing resin is provided so as to cover the semiconductor element.
在供以切斷半導體元件基板以獲得複數個半導體晶片用之方法方面，係例如以下的方法自歷來，已被知悉。 In the method for cutting a semiconductor element substrate to obtain a plurality of semiconductor wafers, for example, the following methods have been known from the past.
首先，從半導體元件基板的基板側黏貼切割用的黏著 帶，同時藉切割機等而將半導體元件基板從形成有半導體元件之側作切斷。然後，將藉切斷而形成之各半導體晶片從黏著帶作剝除，從而獲得複數個半導體晶片。 First, the adhesion for cutting is adhered from the substrate side of the semiconductor element substrate. At the same time, the semiconductor element substrate is cut from the side on which the semiconductor element is formed by a cutter or the like. Then, each of the semiconductor wafers formed by cutting is stripped from the adhesive tape to obtain a plurality of semiconductor wafers.
然而，如此從半導體元件基板的基板側黏貼切割用的黏著帶，而進行半導體元件基板的切斷之情況下，具有在切斷面(半導體晶片之基板側面)發生所謂塌邊(發生脫落)、或切斷面變粗等之課題。 However, when the adhesive tape for dicing is adhered from the substrate side of the semiconductor element substrate, and the semiconductor element substrate is cut, the so-called sag (disappearance) occurs on the cut surface (the side surface of the substrate of the semiconductor wafer). Or the problem that the cut surface becomes thicker.
所以，近年來，為了解決如此之課題，而已有提議如下方法：對於半導體元件基板，並非從基板側，而是從形成有半導體元件之側，亦即從將半導體元件作密封之密封樹脂側黏貼切割用的黏著帶，而切斷半導體元件基板。 Therefore, in recent years, in order to solve such a problem, there has been proposed a method in which a semiconductor element substrate is pasted from the side of the substrate, not from the side on which the semiconductor element is formed, that is, from the side of the sealing resin on which the semiconductor element is sealed. The adhesive tape for cutting is cut, and the semiconductor element substrate is cut.
於此，歷來，在為了切斷半導體元件基板而使用之切割用的黏著帶方面，係使用具有由例如丙烯酸樹脂所構成之黏著劑層者。 Here, in the past, an adhesive layer made of, for example, an acrylic resin is used for the adhesive tape for cutting used for cutting a semiconductor element substrate.
然而，將如此之歷來的黏著帶，從半導體元件基板的形成有半導體元件之側(密封樹脂側)作黏貼而進行半導體元件基板的切割時，例如，在密封樹脂與黏著帶之黏著力為不充分之情況下，係具有在切割時半導體晶片會飛散等的問題之虞。 However, when the adhesive tape of the conventional element is pasted on the side of the semiconductor element substrate on which the semiconductor element is formed (the sealing resin side), and the semiconductor element substrate is cut, for example, the adhesive force between the sealing resin and the adhesive tape is not In the case of sufficient, there is a problem that the semiconductor wafer may scatter during cutting.
然而，在LED等之半導體元件用的密封樹脂方面，係近年來，採用聚矽氧樹脂之情況多。亦即，歷來，在半導體元件用的密封樹脂方面，係利用在電氣特性和耐熱性方面優異之環氧樹脂，惟環氧樹脂係在使用於短波長的LED或高輸出之LED之情況下存在容易變色等的 問題。對此，原因在於：聚矽氧樹脂係與環氧樹脂比較下難以引起熱或光所造成之變色。 However, in the case of a sealing resin for a semiconductor element such as an LED, in recent years, a polyfluorene resin has been used. In other words, in the case of a sealing resin for a semiconductor element, an epoxy resin excellent in electrical properties and heat resistance is used, but the epoxy resin is used in the case of a short-wavelength LED or a high-output LED. Easy to change color, etc. problem. The reason for this is that the polyoxyxene resin is less likely to cause discoloration caused by heat or light than epoxy resin.
然而，聚矽氧樹脂，係與例如環氧樹脂等比較下具有離型性為高之性質。因此，對於在密封樹脂方面使用了聚矽氧樹脂之半導體元件基板，將例如丙烯酸樹脂系的黏著帶從密封樹脂側黏貼之情況下，是密封樹脂之聚矽氧樹脂與黏著帶的接著力容易變小。此結果，在半導體元件基板的切斷時，更容易發生上述的半導體晶片之飛散等的問題。 However, the polyoxyxene resin has a property of being high in release property as compared with, for example, an epoxy resin. Therefore, in the case of a semiconductor element substrate using a polyoxyxylene resin for sealing a resin, for example, an adhesive tape of an acrylic resin is adhered from the side of the sealing resin, the adhesion force of the polyoxyl resin of the sealing resin and the adhesive tape is easy. Become smaller. As a result, when the semiconductor element substrate is cut, problems such as scattering of the semiconductor wafer described above are more likely to occur.
對此，本實施形態之黏著帶1，係如上所述，黏著劑層3含有固化型的聚矽氧系黏著劑及固化劑而構成，使得即使在進行半導體元件基板的切割之情況下從密封樹脂側作黏貼而使用的情況下，仍可良好地保持與半導體元件基板的密封樹脂之接著力。然後，比起歷來的黏著帶，在進行半導體元件基板的切割之情況下，可抑制半導體晶片之飛散等的發生。 On the other hand, in the adhesive tape 1 of the present embodiment, as described above, the adhesive layer 3 is composed of a curable polyoxygen-based adhesive and a curing agent, so that the sealing is performed even when the semiconductor element substrate is cut. When the resin side is used for adhesion, the adhesion to the sealing resin of the semiconductor element substrate can be favorably maintained. Then, when the semiconductor element substrate is diced, the occurrence of scattering or the like of the semiconductor wafer can be suppressed compared to the conventional adhesive tape.
以下，針對本實施形態之黏著帶1的使用方法、及使用了本實施形態之黏著帶1的半導體晶片之製造方法，詳細作說明。圖2(a)~(d)，係繪示了使用了本實施形態之黏著帶的半導體晶片之製造方法的圖。 Hereinafter, a method of using the adhesive tape 1 of the present embodiment and a method of manufacturing a semiconductor wafer using the adhesive tape 1 of the present embodiment will be described in detail. 2(a) to 2(d) are views showing a method of manufacturing a semiconductor wafer using the adhesive tape of the embodiment.
另外，在以下作說明之方法，係採用了黏著帶1的半導體晶片之製造方法的一例，黏著帶1之使用方法，係不限定於以下的方法。亦即，本實施形態之黏著帶1，係只要為在切割時黏貼於具有以密封樹脂作密封之複數個半導 體元件的半導體元件基板者，則可不限定於以下的方法而使用。 Further, the method described below is an example of a method of manufacturing a semiconductor wafer using the adhesive tape 1, and the method of using the adhesive tape 1 is not limited to the following method. That is, the adhesive tape 1 of the present embodiment is affixed to a plurality of semiconductors having a sealing resin seal as it is cut. The semiconductor element substrate of the bulk element can be used without being limited to the following method.
在本實施形態中，係首先，在由例如樹脂材料等所成之基板101上，積載複數個半導體元件102，作成半導體元件基板100。另外，半導體元件102，係例如LED元件，圖示雖省略，例如被積層包含因通電而發光之發光層等的複數個半導體層而構成，於上部係形成有電極。 In the present embodiment, first, a plurality of semiconductor elements 102 are stacked on a substrate 101 made of, for example, a resin material to form a semiconductor element substrate 100. In addition, the semiconductor element 102 is, for example, an LED element, and is formed by, for example, a plurality of semiconductor layers including a light-emitting layer that emits light by being energized, and an electrode is formed on the upper portion.
接著，將形成於半導體元件基板100的基板101上之複數個半導體元件102，以由聚矽氧系樹脂所成之密封樹脂103作密封(密封程序)。另外，在此例中，係將複數個半導體元件102藉密封樹脂103統一作密封，惟亦可將個別的半導體元件102藉密封樹脂103而個別密封。 Next, the plurality of semiconductor elements 102 formed on the substrate 101 of the semiconductor element substrate 100 are sealed by a sealing resin 103 made of a polyoxyn resin (sealing procedure). Further, in this example, a plurality of semiconductor elements 102 are collectively sealed by the sealing resin 103, but the individual semiconductor elements 102 may be individually sealed by the sealing resin 103.
接著，如圖2(a)所示，以黏著帶1之黏著劑層3對向於半導體元件基板100的密封樹脂103之方式，使黏著帶1與半導體元件基板100貼合(黏貼程序)。 Then, as shown in FIG. 2(a), the adhesive tape 1 of the adhesive tape 1 is applied to the sealing resin 103 of the semiconductor element substrate 100, and the adhesive tape 1 is bonded to the semiconductor element substrate 100 (adhesion procedure).
接著，如圖2(b)(c)所示，在使黏著帶1與半導體元件基板100貼合之狀態下，沿著切斷預定線X，而將半導體元件基板100藉切割機等而切斷(切斷程序)。在此例中，係將黏貼了黏著帶1之半導體元件基板100，從基板101側切斷。此外，如圖2(c)所示，在此例中，係進行將半導體元件基板100全部切入之所謂全切割。 Then, as shown in Fig. 2 (b) and (c), the semiconductor element substrate 100 is cut by a cutting machine or the like along the line to cut X in a state where the adhesive tape 1 is bonded to the semiconductor element substrate 100. Broken (cut off the program). In this example, the semiconductor element substrate 100 to which the adhesive tape 1 is adhered is cut off from the substrate 101 side. Further, as shown in FIG. 2(c), in this example, a so-called full cut in which the semiconductor element substrate 100 is entirely cut is performed.
接著，將切斷半導體元件基板100從而形成 之半導體晶片200從黏著帶1剝除(拾取)，使得如圖2(d)所示，可獲得單片化之半導體晶片200(剝離程序)。 Next, the semiconductor element substrate 100 is cut to form The semiconductor wafer 200 is stripped (picked) from the adhesive tape 1 so that a singulated semiconductor wafer 200 (peeling process) can be obtained as shown in Fig. 2(d).
如上所述，在本實施形態之黏著帶1，係黏著劑層3含有固化型的聚矽氧系黏著劑與固化劑而構成。藉此，在將黏著帶1使用於切割之情況下，即使在從半導體元件基板100的密封樹脂103側作黏貼之情況下，仍變得可良好地保持半導體元件基板100與黏著帶1之接著力。 As described above, in the adhesive tape 1 of the present embodiment, the adhesive layer 3 is composed of a curable polyoxynoxy adhesive and a curing agent. By the way, in the case where the adhesive tape 1 is used for the dicing, even when the adhesive resin 103 of the semiconductor element substrate 100 is pasted, the semiconductor element substrate 100 and the adhesive tape 1 can be favorably maintained. force.
尤其，近年來，在將半導體元件102密封之密封樹脂103方面多半使用離型性高的聚矽氧樹脂，而本實施形態之黏著帶1，係由於具有上述之構成，因而對於由聚矽氧樹脂所成之密封樹脂103亦具有良好的接著力。 In particular, in recent years, a polyfluorene resin having a high release property is often used for the sealing resin 103 that seals the semiconductor element 102, and the adhesive tape 1 of the present embodiment has the above-described configuration, and thus The sealing resin 103 made of a resin also has a good adhesion.
此結果，本實施形態之黏著帶1，係在使用於半導體元件基板100的切割之情況下，可抑制半導體晶片200的飛散。 As a result, in the case where the adhesive tape 1 of the present embodiment is used for dicing the semiconductor element substrate 100, scattering of the semiconductor wafer 200 can be suppressed.
再者，含於本實施形態之黏著帶1的黏著劑層3之固化型的聚矽氧系黏著劑，係如上所述一方面具有與密封樹脂103良好的黏著力，另一方面具有離型性高之性質。藉此，在本實施形態中，係在將藉半導體元件基板100的切割而獲得之半導體晶片200從黏著帶1剝除時，可抑制在半導體晶片200附著了黏著劑之所謂黏劑殘物的發生。 Further, the curable polyoxynoxy adhesive contained in the adhesive layer 3 of the adhesive tape 1 of the present embodiment has a good adhesion to the sealing resin 103 as described above, and has a release property on the other hand. The nature of sexuality. Therefore, in the present embodiment, when the semiconductor wafer 200 obtained by the dicing of the semiconductor element substrate 100 is peeled off from the adhesive tape 1, it is possible to suppress the so-called adhesive residue adhering to the adhesive on the semiconductor wafer 200. occur.
另外，通常，例如將黏著劑層被以丙烯酸系的黏著劑而構成之黏著帶使用於半導體元件基板的切割之 情況下，在將切斷後的半導體晶片從黏著帶剝除時，係需要預先對於黏著帶照射紫外線，而使黏著劑層的黏著性消失。另一方面，在本實施形態之黏著帶1的情況下，係可在不需要進行照射紫外線之程序之情況下，將半導體晶片200從黏著帶1剝除。 Further, in general, for example, an adhesive tape in which an adhesive layer is formed of an acrylic adhesive is used for cutting of a semiconductor element substrate. In this case, when the cut semiconductor wafer is peeled off from the adhesive tape, it is necessary to irradiate the adhesive tape with ultraviolet rays in advance, and the adhesiveness of the adhesive layer is eliminated. On the other hand, in the case of the adhesive tape 1 of the present embodiment, the semiconductor wafer 200 can be peeled off from the adhesive tape 1 without requiring a procedure for irradiating ultraviolet rays.
因此，將本實施形態之黏著帶1使用於半導體元件基板100的切割，使得可簡易化半導體晶片200的製程。 Therefore, the adhesive tape 1 of the present embodiment is used for dicing the semiconductor element substrate 100, so that the process of the semiconductor wafer 200 can be simplified.
接著，利用實施例及比較例而對於本發明進一步具體作說明。另外，本發明，係非限定於以下的實施例者。 Next, the present invention will be further specifically described by way of examples and comparative examples. Further, the present invention is not limited to the following examples.
本發明人等，係針對在黏著劑層3方面採用了過氧化物固化型聚矽氧系黏著劑之第1形態、及在黏著劑層3方面採用了加成反應型聚矽氧系黏著劑之第2形態的各者，改變固化劑(起始劑、交聯劑)之添加量而進行黏著帶1之製作，進行所製作的黏著帶1之評估。 The inventors of the present invention have adopted the first embodiment of the peroxide-curable polyfluorene-based pressure-sensitive adhesive for the pressure-sensitive adhesive layer 3 and the addition-reaction type polyoxygen-based adhesive for the pressure-sensitive adhesive layer 3. In each of the second aspects, the amount of the curing agent (starting agent, crosslinking agent) was changed to prepare the adhesive tape 1, and the adhesive tape 1 thus produced was evaluated.
以下，詳細說明有關於各實施例及各比較例。 Hereinafter, each embodiment and each comparative example will be described in detail.
於甲苯，將由有機聚矽氧烷所成之過氧化物固化型聚矽氧系黏著劑(信越化學工業股份有限公司製KR101-1)、及由甲基過氧化苯甲醯所成之起始劑(日油股份有 限公司製NYPERK40)予以溶解，對於黏著劑溶液作了調整。另外，過氧化物固化型聚矽氧系黏著劑及起始劑的含有量，係以如表1所示的方式而作了調整。 A peroxide-curable polyoxynoxy adhesive (KR101-1 manufactured by Shin-Etsu Chemical Co., Ltd.) made of an organic polyoxane, and a starting from methyl benzamidine Agent (Japanese oil shares have Limited to the company's NYPERK40) to dissolve, adjust the adhesive solution. Further, the contents of the peroxide-curable polyoxygen-based adhesive and the initiator were adjusted as shown in Table 1.
接著，將此黏著劑溶液，塗布於由厚度75μm之聚對苯二甲酸乙二酯(PET)膜所成之基材2上後，在160度之溫度下加熱3分鐘，從而形成厚度30μm之黏著劑層3，獲得總厚105μm之黏著帶1。 Next, this adhesive solution was applied onto a substrate 2 made of a polyethylene terephthalate (PET) film having a thickness of 75 μm, and then heated at a temperature of 160 ° C for 3 minutes to form a thickness of 30 μm. Adhesive layer 3, an adhesive tape 1 having a total thickness of 105 μm was obtained.
於甲苯，將由在分子內具有乙烯矽烷(Vinylsilyl)基的有機聚矽氧烷所成之加成反應型聚矽氧系黏著劑(信越化學工業股份有限公司製X-40-3237-1)、鉑族金屬系觸媒(信越化學工業股份有限公司製CAT-PL-50T)、及由在分子內具有氫矽烷(Hydrosilyl)基的有機聚矽氧烷所成之交聯劑(信越化學工業股份有限公司製X-92-122)予以溶解，對於黏著劑溶液作了調整。另外，加成反應型聚矽氧系黏著劑、觸媒及交聯劑的含有量，係以如表1所示的方式而作了調整。 An addition reaction type polyoxo-based adhesive (X-40-3237-1, manufactured by Shin-Etsu Chemical Co., Ltd.) made of an organic polyoxane having a vinyl silane (Minylsilyl) group in the molecule, A platinum group metal catalyst (CAT-PL-50T manufactured by Shin-Etsu Chemical Co., Ltd.) and a crosslinking agent composed of an organopolyoxane having a hydrosilyl group in the molecule (Shin-Etsu Chemical Industry Co., Ltd.) Co., Ltd. X-92-122) was dissolved and adjusted for the adhesive solution. Further, the contents of the addition reaction type polyoxo-based adhesive, catalyst, and crosslinking agent were adjusted as shown in Table 1.
接著，將此黏著劑溶液，塗布於由厚度75μm之PET膜所成的基材2之上後，在120度之溫度下加熱3分鐘，從而形成厚度30μm之黏著劑層3，獲得總厚105μm之黏著帶1。 Next, this adhesive solution was applied onto the substrate 2 made of a PET film having a thickness of 75 μm, and then heated at a temperature of 120 °C for 3 minutes to form an adhesive layer 3 having a thickness of 30 μm to obtain a total thickness of 105 μm. Adhesive tape 1.
除了在黏著劑層3中使起始劑的含有量為0以外，係採取與實施例1~實施例4相同，而獲得了黏著帶1。 The adhesive tape 1 was obtained in the same manner as in Examples 1 to 4 except that the content of the initiator was 0 in the adhesive layer 3.
除了在黏著劑層3中使交聯劑的含有量為0以外，係採取與實施例5~實施例8相同，而獲得了黏著帶1。 The adhesive tape 1 was obtained in the same manner as in Example 5 to Example 8 except that the content of the crosslinking agent was 0 in the adhesive layer 3.
除了在黏著劑層3方面採用了丙烯酸系的黏著劑之以外，係採取與實施例1~8相同，而獲得了黏著帶1。 The adhesive tape 1 was obtained in the same manner as in Examples 1 to 8, except that an acrylic adhesive was used for the adhesive layer 3.
接著，說明有關於黏著帶1之評估方法。 Next, an evaluation method regarding the adhesive tape 1 will be described.
針對以上述之方法而製作之黏著帶1，準據於記載在JIS Z 0237(2000)之方法，而進行了對研磨SUS黏著力試驗(剝離黏著力試驗)。 The adhesive tape 1 produced by the above method was subjected to a polishing SUS adhesion test (peel adhesion test) in accordance with the method described in JIS Z 0237 (2000).
具體而言，將黏著帶1黏貼於以耐水砂紙作了研磨之不鏽鋼板(SUS304)，使質量2000g之輥子以5mm/s之速度往返一次，而作了壓接。接著，放置20~40分鐘後，使用拉伸試驗機，而相對於不鏽鋼板往180°方向以5mm/s之速度作剝離，測定了對於研磨SUS板之黏著力。 Specifically, the adhesive tape 1 was adhered to a stainless steel plate (SUS304) polished with water-resistant sandpaper, and a roller having a mass of 2000 g was reciprocated at a speed of 5 mm/s, and crimped. Subsequently, after standing for 20 to 40 minutes, the tensile tester was used, and peeling was performed at a speed of 5 mm/s in the 180° direction with respect to the stainless steel plate, and the adhesion to the ground SUS plate was measured.
針對所製作之黏著帶1，而進行了保持力試驗。 A holding force test was performed on the adhesive tape 1 produced.
具體而言，將黏著帶1，黏貼於以耐水砂紙作了研磨之不鏽鋼板(SUS304)，對於在安裝了既定的重量之狀態且40℃之條件下保持24小時的情況下之偏離量(mm)作了測定。於此，在切割用黏著帶方面，係以保持力試驗而測定之偏離量為25mm以下較佳。 Specifically, the adhesive tape 1 is adhered to a stainless steel plate (SUS304) polished with water-resistant sandpaper, and the amount of deviation (mm) is maintained for 24 hours under the condition of being mounted at a predetermined weight and 40 ° C. ) was measured. Here, in terms of the adhesive tape for dicing, the amount of deviation measured by the holding force test is preferably 25 mm or less.
此外，在黏著帶1於經過24小時之前從不鏽鋼板剝離而落下之情況下，係測定了從測定開始至黏著帶1剝離為止的經過時間(分鐘)。另外，在表1中保持力試驗之↓的顯示，係表示黏著帶1在經過24小時前從不鏽鋼板偏離而落下。 Further, in the case where the adhesive tape 1 was peeled off from the stainless steel sheet 24 hours before the passage, the elapsed time (minutes) from the start of the measurement to the peeling of the adhesive tape 1 was measured. In addition, the display of the enthalpy of the holding force test in Table 1 indicates that the adhesive tape 1 was dropped from the stainless steel plate 24 hours before the lapse of 24 hours.
針對所製作之黏著帶1，準據於上述之黏著力試驗的方法，而進行了對聚矽氧黏著力試驗。 For the adhesive tape 1 produced, the adhesion test of the polyoxygenated oxygen was carried out in accordance with the above-mentioned adhesion test method.
具體而言，將黏著帶1，黏貼於塗布了聚矽氧樹脂之板，使質量2000g之輥子以5mm/s之速度往返一次，而作了壓接。隨後，放置20~40分鐘後，使用拉伸試驗機，而相對於塗布了聚矽氧樹脂之板往180°方向以5mm/s之速度作剝離，測定了對於聚矽氧樹脂之黏著力。 Specifically, the adhesive tape 1 was adhered to a plate coated with a polyoxyl resin, and a roller having a mass of 2000 g was reciprocated once at a speed of 5 mm/s to be crimped. Subsequently, after standing for 20 to 40 minutes, the adhesion to the polyoxyxylene resin was measured by using a tensile tester and peeling off at a speed of 5 mm/s in the 180° direction with respect to the plate coated with the polyoxynoxy resin.
另外，在本試驗中作為在黏貼黏著帶1之板所塗布的聚矽氧樹脂，係採用了LED密封劑用之聚矽氧樹脂。 Further, in the present test, as the polyoxyxene resin applied to the sheet to which the adhesive tape 1 was applied, a polyoxymethylene resin for an LED sealant was used.
關於與實施例1~實施例8及比較例1~比較例3之黏著帶1相關的評估結果，示於表1。 The evaluation results relating to the adhesive tapes 1 of Examples 1 to 8 and Comparative Examples 1 to 3 are shown in Table 1.
如示於表1，在將黏著劑層3包含固化型的聚矽氧系黏著劑與固化劑而構成之情況(實施例1~實施例8)下，係確認了：黏著帶1之黏著力、保持力及對聚矽氧黏著力皆為較佳的範圍。 As shown in Table 1, in the case where the adhesive layer 3 was composed of a curable polyoxygen-based adhesive and a curing agent (Examples 1 to 8), the adhesion of the adhesive tape 1 was confirmed. The retention force and adhesion to polyoxymethylene are both preferred.
藉此，確認了：將黏著劑層3包含固化型的聚矽氧系黏著劑與固化劑而構成之黏著帶1，係在從半導體元件基板的密封樹脂側作黏貼而使用於切割之切割用黏著帶方面為有用。 In this way, it was confirmed that the adhesive tape 1 including the curable polyoxynoxy adhesive and the curing agent in the adhesive layer 3 is attached to the sealing resin side of the semiconductor element substrate and used for cutting. Adhesive tape is useful.
接著，實施例1~實施例8之中，比較在聚矽氧系黏著劑方面採用了過氧化物固化型聚矽氧系黏著劑之情況(實施例1~實施例4)時，確認了：由過氧化物所成之起始劑的含有量，相對於過氧化物固化型聚矽氧系黏著劑100重量份，在0.05重量份~10重量份的情況(實施例1~實施例3)下，黏著帶1之保持力更為良好。 Next, in the examples 1 to 8, in the case where a peroxide-curable polyfluorene-based pressure-sensitive adhesive was used in the case of a polyoxynitride-based adhesive (Examples 1 to 4), it was confirmed that: The content of the initiator to be formed from the peroxide is 0.05 parts by weight to 10 parts by weight based on 100 parts by weight of the peroxide-curable polyfluorene-based pressure-sensitive adhesive (Examples 1 to 3). Next, the adhesion of the adhesive tape 1 is better.
再者，確認了：起始劑的含有量，相對於過氧化物固化型聚矽氧系黏著劑100重量份，在0.05重量份~3.5重量份的情況(實施例1、實施例2)下，黏著帶1之對聚矽氧黏著力更為良好。 In addition, it was confirmed that the content of the initiator is from 0.05 part by weight to 3.5 parts by weight based on 100 parts by weight of the peroxide-curable polyadoxic adhesive (Example 1, Example 2). Adhesive tape 1 has better adhesion to polyoxymethylene.
因此，在聚矽氧系黏著劑方面採用了過氧化物固化型聚矽氧系黏著劑之情況下，係確認了：由過氧化物所成之起始劑的含有量，相對於過氧化物固化型聚矽氧系黏著劑100重量份，0.05重量份~10重量份的範圍更佳，0.05重量份~3.5重量份的範圍再更佳。 Therefore, when a peroxide-curable polyadoxic adhesive is used for the polyoxygen-based adhesive, it is confirmed that the content of the initiator which is formed by the peroxide is relative to the peroxide. The curable polyoxygen-based adhesive is preferably 100 parts by weight, more preferably 0.05 parts by weight to 10 parts by weight, even more preferably 0.05 parts by weight to 3.5 parts by weight.
再者，實施例1~實施例8之中，比較在聚矽 氧系黏著劑方面採用了加成反應型聚矽氧系黏著劑之情況(實施例5~實施例8)時，確認了：交聯劑的含有量，相對於加成反應型聚矽氧系黏著劑100重量份，在0.1重量份~7重量份的情況(實施例5~實施例7)下，黏著帶1之黏著力及對聚矽氧黏著力更高，在0.1重量份~2重量份的情況(實施例5、實施例6)下，黏著帶1之黏著力及對聚矽氧黏著力更高。 Furthermore, in the first to eighth embodiments, the comparison is in the poly In the case of using an addition reaction type polyoxo-based adhesive for the oxygen-based adhesive (Examples 5 to 8), it was confirmed that the content of the crosslinking agent was increased with respect to the addition reaction type polyoxo system. 100 parts by weight of the adhesive, in the case of 0.1 parts by weight to 7 parts by weight (Examples 5 to 7), the adhesive force of the adhesive tape 1 and the adhesion to the polyoxygenated oxygen are higher, and the weight is 0.1 to 2 parts by weight. In the case of Example (Example 5, Example 6), the adhesive force of the adhesive tape 1 and the adhesion to the polyoxymethylene were higher.
因此，確認了：在聚矽氧系黏著劑方面採用了加成反應型聚矽氧系黏著劑之情況下，係交聯劑的含有量，相對於加成反應型聚矽氧系黏著劑100重量份，0.1重量份~7重量份的範圍更佳，0.1重量份~2重量份的範圍再更佳。 Therefore, when the addition reaction type polyoxynoxy adhesive is used for the polyoxygen-based adhesive, the content of the crosslinking agent is determined with respect to the addition reaction type polyoxygen-based adhesive 100. The range of 0.1 part by weight to 7 parts by weight is more preferably in the range of 0.1 part by weight to 2 parts by weight.
對此，確認了：在黏著劑層3不含固化劑(起始劑或交聯劑)之情況(比較例1、比較例2)下，係黏著帶1之保持力明顯低。此係可想作：在黏著劑層3不含固化劑之情況下，係聚矽氧系黏著劑未固化之故。 On the other hand, it was confirmed that the adhesive strength of the adhesive tape 1 was remarkably low in the case where the adhesive layer 3 did not contain a curing agent (starting agent or crosslinking agent) (Comparative Example 1 and Comparative Example 2). This system is thought to be: in the case where the adhesive layer 3 does not contain a curing agent, the polyoxygenated adhesive is not cured.
然後，在採用如此之黏著帶1作為切割用黏著帶之情況下，係預料：將黏著帶1使用於半導體元件基板的切割之後，在從所獲得之半導體晶片剝下黏著帶1時，容易產生黏劑殘物。 Then, in the case where such an adhesive tape 1 is used as the adhesive tape for dicing, it is expected that the adhesive tape 1 is used for the dicing of the semiconductor element substrate, and the adhesive tape 1 is easily peeled off when the adhesive tape 1 is peeled off from the obtained semiconductor wafer. Sticky residue.
此外，在黏著劑層3方面採用了丙烯酸系的黏著劑之情況(比較例3)下，係確認了：儘管黏著帶1之黏著力及保持力為良好，對於在半導體元件的密封樹脂方面所使用之聚矽氧樹脂的黏著力明顯低。 Further, in the case where an acrylic adhesive was used for the adhesive layer 3 (Comparative Example 3), it was confirmed that although the adhesive force and the holding force of the adhesive tape 1 were good, the sealing resin for the semiconductor element was used. The polyoxymethylene resin used has a significantly lower adhesion.
在將如此之黏著帶1作為切割用黏著帶而從半導體元件基板的密封樹脂側作黏貼而使用之情況下，係預料：在進行切割時，半導體元件基板或半導體晶片變得容易從黏著帶1剝離，容易發生半導體晶片之飛散。 When such an adhesive tape 1 is used as a dicing adhesive tape for adhesion from the sealing resin side of a semiconductor element substrate, it is expected that the semiconductor element substrate or the semiconductor wafer becomes easy to be detached from the adhesive tape 1 at the time of dicing. Peeling is easy to cause scattering of the semiconductor wafer.
1‧‧‧黏著帶 1‧‧‧Adhesive tape
2‧‧‧基材 2‧‧‧Substrate
3‧‧‧黏著劑層 3‧‧‧Adhesive layer
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| JP2013179008A JP6168553B2 (en) | 2013-08-30 | 2013-08-30 | Dicing adhesive tape and semiconductor chip manufacturing method |
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| KR20190013128A (en) * | 2017-07-31 | 2019-02-11 | 다우 실리콘즈 코포레이션 | Silicone composition for temporary bonding adhesive, electronic article comprising cured body of the same, and manufacturing method thereof |
| EP3730567A4 (en) | 2017-12-20 | 2021-08-25 | Dow Toray Co., Ltd. | Silicone-based adhesive sheet, multilayer structure including same, and method for producing semiconductor device |
| KR20220116184A (en) | 2019-12-19 | 2022-08-22 | 맥셀 주식회사 | Manufacturing method of adhesive tape for dicing and semiconductor chip |
| KR20220117234A (en) | 2019-12-20 | 2022-08-23 | 맥셀 주식회사 | Manufacturing method of adhesive tape for dicing and semiconductor chip |
| CN113429930B (en) * | 2021-07-13 | 2022-09-09 | 深圳市新泰盈电子材料有限公司 | Addition type bi-component organic silicon pouring sealant and preparation method thereof |
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| JP2007100064A (en) * | 2005-09-07 | 2007-04-19 | Furukawa Electric Co Ltd:The | Pressure-sensitive adhesive tape for dicing |
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