TWI502679B - Bonding material and semiconductor supporting device - Google Patents

Description

Bonding agent and semiconductor support device

The present invention relates to a bonding device for a semiconductor manufacturing device susceptor and a cooling plate for bonding an electrostatic chuck or a heater-attached electrostatic chuck, and having the bonding agent bonded thereto A semiconductor support device for a semiconductor manufacturing device for a crystal holder and a cooling plate.

Conventionally, a crystal holder for a semiconductor manufacturing apparatus and a cooling plate for controlling the temperature of a germanium wafer substrate supported on a crystal holder for a semiconductor manufacturing apparatus are mostly made of a liquid polyoxyalkylene rubber or an indium (In) metal layer. Or the propylene-based and epoxy-based organic adhesives are joined (see Patent Documents 1, 2, and 3).

[Patent Document 1] JP-A-4-287344

[Patent Document 2] Japanese Patent Publication No. 3-3249

[Patent Document 3] JP-A-2002-231797

However, when a liquid polysiloxane rubber is used to bond a crystal holder and a cooling plate for a semiconductor manufacturing apparatus, it is bent after bonding due to volume shrinkage at the time of hardening of the liquid ruthenium rubber, and the plane of the crystal holder for the semiconductor manufacturing apparatus is made. Degree is reduced. Also, when using an indium-containing metal layer, indium itself may be made in its The problem of becoming a source of pollution during the manufacturing process. Further, when an organic adhesive is used, since the heat resistance temperature of the organic adhesive is lower than 100 ° C, there is a problem in heat resistance.

In order to solve the above problems, the main object of the present invention is to provide a bonding agent which can maintain the flatness of a crystal holder for a semiconductor manufacturing apparatus while maintaining a high degree of heat resistance without causing a source of contamination during the manufacturing process. Furthermore, another object of the present invention is to provide a flatness for highly maintaining a crystal holder for a semiconductor manufacturing apparatus, and at the same time, to prevent a bonding layer of a wafer holder and a cooling plate for a semiconductor manufacturing apparatus from becoming a source of contamination during a manufacturing process. A semiconductor support device with high heat resistance.

In order to solve the above problems, the semiconductor supporting device of the present invention comprises: a crystal holder for a semiconductor manufacturing device, a cooling plate, and a bonding agent for bonding a crystal holder and a cooling plate for a semiconductor manufacturing device. The bonding agent is formed of a cured sheet composed of an addition-curable polyoxyalkylene adhesive, and the addition-curable polyoxyalkylene adhesive includes polyorganosiloxane, which is contained in one molecule. Two or more vinyl; polyorganosiloxane products containing R ₃ SiO _1/2 (R is a monovalent hydrocarbon group having 1 to 6 carbon atoms without an aliphatic unsaturated bond) (hereinafter referred to as M) and SiO _4/2 unit (hereinafter referred to as Q), and the molar ratio (M/Q ratio) of the R ₃ SiO _1/2 unit/SiO _4/2 unit is in the range of 0.6 or more and 1.6 or less; The oxyalkylene hydrogenated diene contains a halogen atom-bonded hydrogen atom; the platinum catalyst; and the thermally conductive filler have a content ratio of 20% by volume or more and 5% by volume or less.

When the M/Q ratio is less than 0.6, the heat resistance is increased upwards, but the adhesion is easily lowered. Also, when the M/Q ratio exceeds 1.6, the adhesion is also easily lowered. In addition, when the content ratio of the thermally conductive filler is less than 20% by volume with respect to the whole, the thermal conductivity may become insufficient, and if it exceeds 50% by volume, the adhesiveness may be lowered.

According to the present invention, it is possible to provide a bonding agent which can maintain the flatness of the crystal holder for a semiconductor manufacturing apparatus while maintaining a high degree of heat resistance without causing a source of contamination during the manufacturing process. Furthermore, according to the present invention, it is possible to provide a flatness for highly maintaining the crystal holder for a semiconductor manufacturing apparatus, and at the same time, it is possible to prevent the bonding layer of the crystal holder and the cooling plate for the semiconductor manufacturing apparatus from becoming a source of pollution and heat resistance during the manufacturing process. High-performance semiconductor support device.

The bonding agent of the present invention is formed of a hardened sheet composed of an addition-curable polyoxyalkylene adhesive, and the addition-hardening polyoxyalkylene adhesive includes; polyorganosiloxane, in one molecule Containing two or more vinyl groups; polyorganosiloxane products containing R ₃ SiO _1/2 (R is a monovalent hydrocarbon group having 1 to 6 carbon atoms without an aliphatic unsaturated bond) (hereinafter referred to as M) And a SiO _4/2 unit (hereinafter referred to as Q), and the ratio of the molar ratio (M/Q ratio) of the R ₃ SiO _1/2 unit/SiO _4/2 unit is in the range of 0.6 or more and 1.6 or less. The hydrazine-hydrogenated diene contains a hydrogen atom bonded to a ruthenium atom; a platinum catalyst; and a thermally conductive filler having a content ratio of 20% by volume or more and 50% by volume or less.

The addition reaction-curing type polyoxane adhesive composition is preferably composed of the following components: (A) polyorganosiloxane, which contains two or more vinyl groups in one molecule, and (B) polyorganic a decane resin containing R ₃ SiO _1/2 (R is a monovalent hydrocarbon group having 1 to 6 carbon atoms without an aliphatic unsaturated bond) and a SiO _4/2 unit, and R ₃ SiO _1/2 unit / The SiO _4/2 unit has a molar ratio of 0.6 to 1.6; (C) a polyorganooxyalkylene hydrogenated diene having three or more SiH groups in one molecule; (D) a platinum catalyst; and (E) Thermally conductive filler.

The vinyl content in the component (A) is preferably 0.02 to 0.40 mol%, more preferably 0.04 to 0.25 mol%. If it is below 0.02 mol%, the adhesion and maintenance force will decrease; if it is above 0.40 mol%, the adhesion and adhesion will decrease.

The component (A) is preferably a chain polyorganosiloxane containing a vinyl group at the end of the molecular chain and/or a side chain, and may be in the form of an oil or a raw rubber, and the viscosity is at 25 ° C. More preferably 1,000 [mPa ‧ s] or more, and 10,000 [mPa ‧ s] or more. Further, although the upper limit is not particularly limited, it is preferable to use a polymerization degree of 20,000 or less. The component (A) may be used singly or in combination of two or more.

The component (B) is a polyorganosiloxane which contains R ₃ SiO _1/2 unit (R is a monovalent hydrocarbon group having 1 to 6 carbon atoms which does not have an aliphatic unsaturated bond) and SiO _4/2 unit, and R _{3 The} SiO _1/2 unit / SiO _4/2 unit has a molar ratio of 0.6 to 1.6, and is preferably 0.8 to 1.5, more preferably 1.0 to 1.5. If the molar ratio of the R ₃ SiO _1/2 unit/SiO _4/2 unit is less than 0.6, the adhesion and the adhesion force are lowered; if it exceeds 1.6, the adhesion and the maintenance force are also lowered. The component (B) may also contain a SiOH group, and the OH group content may be 0 to 4.0% by weight. Further, the component (B) may be used in combination of two or more kinds. Further, examples of R include, for example, an alkyl group such as a methyl group, an ethyl group, a propyl group or a butyl group; a cycloalkyl group such as a cyclohexyl group; a phenyl group; and the like.

The mass ratio of the component (A) to the component (B) is 80/20 to 20/80, and it is preferably 60/40 to 30/70. If the proportion of the component (A) is too small, the adhesion force will be lowered and it will not be applicable. Conversely, if the proportion of the component (A) is too large, the adhesion will be lowered and not suitable, which is not preferable.

From the viewpoint of adhesion and releasability, in particular, the molar ratio of the R ₃ SiO _1/2 unit/SiO _4/2 unit of the component (B) is 1.0 to 1.5, and the component (A) and B) The mass ratio of the components is preferably 50/50 to 40/60.

The component (C) is a cross-linking agent, and is a linear, branched or cyclic compound which contains at least three SiH groups in one molecule and hydrogenated with four preferred polyorganosiloxanes. .

The amount of the component (C) is preferably such that the molar ratio of the SiH group in the component (C) to the vinyl group in the component (A) is preferably from 1 to 25, particularly preferably from 5 to 20. If it is less than 1, the density of cross-linking will become lower, and the maintenance force will decrease. If it exceeds 25, the adhesion and adhesion will be reduced. At the same time, during the process of making the adhesive sheet, it will adhere. The usable time of the composition of the agent is also shortened.

The component (D) is a platinum-based catalyst, and examples thereof include chloroplatinic acid, an alcohol solution of chloroplatinic acid, a reaction product of chloroplatinic acid and an alcohol, and a chloroplatinic acid and an olefin compound. The reactant, the reaction product of chloroplatinic acid and a vinyl group-containing decane, and the like. Among them, a reaction product of chloroplatinic acid and a vinyl group-containing decane is preferred, and is, for example, commercially available under the trade name CAT-PL-50T (manufactured by Shin-Etsu Chemical Co., Ltd.).

The amount of the component (D) is preferably from 5 to 500 ppm, and preferably from 10 to 200 ppm, based on 100 parts by mass of the total of the components (A) and (B). If it is less than 5 ppm, the hardenability will be lowered, the cross-linking density will be lowered, and the maintaining power will be lowered. If it exceeds 500 ppm, the usable time of the adhesive composition will be shortened at the time of coating.

The thermally conductive filler of the component (E) is preferably formed of any of alumina (Al ₂ O ₃ ), aluminum nitride (AlN) or tantalum carbide (SiC).

The thermally conductive filler is composed of fine particles having an average particle diameter of 1 μm or less and coarse particles having an average particle diameter of 10 μm or more and 30 μm or less in a numerical range such that the weight ratio thereof is 3:7 or more and 1:9 or less. The internally mixed particles are preferably formed. Thereby, the fine particles are filled between the coarse particles to stabilize the thermal conductivity. Further, by achieving the densest filling, the low elasticity of the bonding agent can be maintained, and the adhesion between the crystal holder and the cooling plate for the semiconductor manufacturing apparatus can be improved. Further, when the average particle diameter of the thermally conductive filler is 30 μm or more, the smoothness of the surface of the bonding agent is lowered, and the adhesion is also likely to be lowered.

It is preferable to apply a decane coupling primer layer in advance to the bonding surface of the bonding agent and the crystal holder and the cooling plate for the semiconductor manufacturing apparatus. Further, the crystal holder for the semiconductor manufacturing apparatus is preferably formed of any one of aluminum nitride, aluminum oxide, boron nitride (BN) or antimony trioxide; and the cooling plate is made of either aluminum alloy or brass. The formation is better.

If necessary, an addition reaction control agent may be added as the component (F). The component (F) is a substance which is added in order to prevent the adhesive composition from being viscous or gelled before being prepared by heating and curing from the preparation of the polyoxyalkylene adhesive composition.

Specific examples of the component (F) include 3-methyl-1-butyn-3-ol, 3-methyl-1-pentyn-3-ol, and 3, 5-dimethyl 1-hexyl-3-ol, 1-ethynylcyclohexanol, 3-methyl-3-trimethylformamidinyl-1-butyne, 3-methyl-3-trimethylformamidine Oxyalkyl-1-pentyne, 3,5-dimethyl-3-trimethylformamido-1-hexyne, 1-ethynyl-1-trimethylformamidinylcyclohexane Alkane, bis(2,2-dimethyl-3-butynyl) dimethyl decane, 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetraindole Oxylkane, 1,1,3,3-tetramethyl-1,3-divinyldioxane, and the like.

The amount of the component (F) is preferably in the range of 0 to 8.0 parts by mass, and preferably 0.05 to 2.0 parts by mass, based on 100 parts by mass of the total of the components (A) and (B). When it exceeds 8.0 parts by mass, the hardenability will be lowered.

In the polyoxyalkylene adhesive composition of the present invention, any component may be added in addition to the above components. For example, a non-reactive polyorganosiloxane such as dimethyl polysiloxane or dimethyl diphenyl polysiloxane; an aromatic system such as toluene or xylene for reducing the viscosity at the time of coating; Solvent; aliphatic solvent such as hexane, octane or isoparaffin; ketone solvent such as methyl ethyl ketone or methyl isobutyl ketone; ester solvent such as ethyl acetate or isobutyl acetate; An ether solvent such as diisopropyl ether or 1,4-dioxane; and a mixed solvent of the above substances, an antioxidant, a dye, a pigment, and the like. In addition, also It is possible to use a solvent which is generally used to lower the viscosity of the composition and to facilitate application of the coating.

The coating amount of the polyoxyalkylene adhesive composition is selected so that the thickness of the adhesive layer after hardening becomes 50 to 300 μm, and it is preferably 100 to 200 μm.

In the case of hardening conditions, the addition reaction hardening type can be hardened by 5 to 20 minutes at 90 to 120 ° C, but it is not limited thereto.

The bonding agent of the present invention can be applied to a semiconductor supporting device including an element to be described later as the bonding agent 4 for bonding the wafer holder 2 and the cooling plate 3 for a semiconductor manufacturing device, as exemplified in Fig. 1 . The semiconductor supporting device includes: a semiconductor manufacturing device crystal holder 2 for supporting the semiconductor wafer 1, and a cooling medium supplied from the cooling medium supply path 3a to cool the semiconductor manufacturing device crystal holder 2 to control the semiconductor wafer 1 temperature of the cooling plate 3. In addition, the semiconductor supporting device shown in FIG. 1 is formed by a more detailed structure: a crystal holder 2 for a semiconductor manufacturing device; a cooling plate 3; a bonding agent 4; and a gas passage 5 for supplying a gas to the semiconductor wafer. 1 and a wafer holder 2 for a semiconductor manufacturing apparatus; and a top pin hole 6 for inserting the top pin to remove the semiconductor wafer 1 from the wafer holder 2 for a semiconductor manufacturing apparatus.

Hereinafter, the best mode for carrying out the invention will be described.

[Example 1]

In the first embodiment, first, 100 parts by mass of a polyorganosiloxane having a vinyl group at both ends of the molecular chain, and R ₃ SiO _1/2 (R is a carbon number having no aliphatic unsaturated bond) ~6 of a monovalent hydrocarbon group) (hereinafter referred to as M) and a SiO _4/2 unit (hereinafter referred to as Q), and a molar ratio (M/Q ratio of R ₃ SiO _1/2 unit / SiO _4/2 unit) 180 parts by mass of a polyorganosiloxane compound having a ratio of 1.1, which is a polyorganooxyalkylene hydrogenated diene containing a hydrogen atom bonded to a halogen atom, relative to a vinyl group in a polyorganosiloxane containing a vinyl group. The MoH ratio of the SiH group in the composition is 15, the platinum catalyst, and the content of 20% by volume, and the oxidation of alumina (fine particles) having an average particle diameter of 0.7 μm and an average particle diameter of 20 μm. A mixture of aluminum (coarse particles) and a thermally conductive filler which are mixed at a weight ratio of 10:90, dissolved in toluene to form an addition-curable polyoxyalkylene adhesive, and applied to After peeling off the PET release film and placing it in a hot air circulating dryer at 100 ° C for 10 minutes, the cured product is peeled off from the PET release film. Example 1 of the adhesive to a thickness of 120μm embodiment. Next, the present bonding agent was placed on an aluminum (Al) square plate and an aluminum nitride (AlN) square plate of various shapes, and subjected to heat and pressure bonding at 100 ° C and 1.4 MPa for 10 minutes to obtain an example. 1 joint body.

[Embodiment 2]

In the second embodiment, the bonded body of Example 2 was obtained in the same manner as in Example 1 except that the decane coupling primer layer was applied to the joint surface of Al and AlN in advance.

[Example 3]

In Example 3, the weight ratio of the fine particles and the coarse particles was changed to The bonded body of Example 3 was obtained in the same manner as in Example 1 except for 30:70.

[Example 4]

In the embodiment 4, the bonded body of the example 4 was obtained except that the weight ratio of the fine particles and the coarse particles was changed to 20:80, and the other conditions were the same as in the first embodiment.

[Example 5]

In the fifth embodiment, the bonded body of Example 5 was obtained in the same manner as in Example 1 except that the content of the thermally conductive filler was changed to 33% by volume.

[Embodiment 6]

In the same manner as in Example 5 except that the weight ratio of the fine particles and the coarse particles was changed to 20:80, the joined body of Example 6 was obtained.

[Embodiment 7]

In the seventh embodiment, the bonded body of the seventh embodiment was obtained except that the decane coupling primer layer was applied to the joint surface of Al and AlN in advance, and the same conditions as in the sixth embodiment were carried out.

[Embodiment 8]

In the eighth embodiment, except for the M/Q ratio being changed to 1.5, the other conditions The bonded body of Example 8 was obtained in the same manner as in Example 6.

[Embodiment 9]

In the ninth embodiment, the bonded body of Example 9 was obtained except that the decane coupling primer layer was applied to the joint surface of Al and AlN in advance, and the same conditions as in Example 8 were carried out.

[Embodiment 10]

In Example 10, except that the M/Q ratio was changed to 0.6, the same conditions as in Example 7 were carried out, and the joined body of Example 10 was obtained.

[Example 11]

In the eleventh embodiment, the joined body of Example 11 was obtained except that the average particle diameter of the coarse particles was changed to 10 μm, and the same conditions as in Example 7 were carried out.

[Embodiment 12]

In the Example 12, except that the average particle diameter of the coarse particles was changed to 30 μm, the same conditions as in Example 7 were carried out, and the joined body of Example 12 was obtained.

[Example 13]

In the same manner as in Example 7, except that the content of the thermally conductive filler was changed to 50% by volume, the joined body of Example 13 was obtained.

[Embodiment 14]

In the fourteenth embodiment, the bonded body of the example 14 was obtained except that the material of the thermally conductive filler was changed to aluminum nitride (AlN), and the same conditions as in the case of the seventh embodiment were carried out.

[Example 15]

In the fifteenth embodiment, the bonded body of the fifteenth embodiment was obtained except that the material of the thermally conductive filler was changed to tantalum carbide (SiC), and the other conditions were the same as in the seventh embodiment.

[Comparative Example 1]

In Comparative Example 1, a propylene resin containing 30% by volume of a thermally conductive filler having an average particle diameter of 10 μm was prepared, and the propylene resin was used to bond Al and AlN to obtain a joined body of Comparative Example 1.

[Comparative Example 2]

In Comparative Example 2, except that the M/Q ratio was changed to 0.4, the same conditions as in Example 6 were carried out, and the joined body of Comparative Example 2 was obtained.

[Comparative Example 3]

In Comparative Example 3, except that the M/Q ratio was changed to 1.7, the same conditions as in Example 6 were carried out, and the joined body of Comparative Example 3 was obtained.

[Comparative Example 4]

In Comparative Example 4, the bonded body of Comparative Example 4 was obtained in the same manner as in Example 6 except that the content of the thermally conductive filler was changed to 60% by volume.

[Comparative Example 5]

In Comparative Example 5, except that the weight ratio of the fine particles and the coarse particles was changed to 5:95, the same conditions as in Example 7 were carried out, and the joined body of Comparative Example 5 was obtained.

[Comparative Example 6]

In Comparative Example 6, except that the average particle diameter of the coarse particles was changed to 40 μm, the same conditions as in Example 7 were carried out, and the joined body of Comparative Example 6 was obtained.

[Comparative Example 7]

In Comparative Example 7, except that the material of the thermally conductive filler was changed to aluminum nitride (AlN), the same conditions as in Comparative Example 4 were carried out, and the joined body of Comparative Example 7 was obtained.

[Comparative Example 8]

In Comparative Example 8, the bonded body of Comparative Example 8 was obtained in the same manner as in Comparative Example 4 except that the material of the thermally conductive filler was changed to lanthanum carbide (SiC).

[Comparative Example 9]

In Comparative Example 9, the bonded body of Comparative Example 9 was obtained in the same manner as in Example 7 except that the content of the thermally conductive filler was changed to 15% by volume.

[Comparative Example 10]

In Comparative Example 10, except that the material of the thermally conductive filler was changed to aluminum nitride (AlN), the same conditions as in Comparative Example 9 were carried out, and the joined body of Comparative Example 10 was obtained.

[Comparative Example 11]

In Comparative Example 11, except that the material of the thermally conductive filler was changed to lanthanum carbide (SiC), the same conditions as in Comparative Example 9 were carried out, and the joined body of Comparative Example 11 was obtained.

[Shear peel test]

Between the square plate 11 of AlN having a width of 25 mm, a length of 35 mm and a thickness of 10 mm, and the square plate 12 made of Al, the respective bonding agents of the above Examples 1 to 15 and Comparative Examples 1 to 8 were sandwiched in accordance with the size of 25 × 25 mm. The cut piece cut out in size was subjected to a pressure heating step at 100 ° C and 14 atm (atm) to prepare a joined body. Then, the shear peel strength and the shear elongation of each joined body were measured at room temperature and 150 ° C using a shear peel tester as shown in Fig. 2 . The test results are shown in Table 1 below. In addition, in the physical joint of ψ300mm size, in order to maintain the airtightness of the joint interface, the objective value that can be inferred empirically should be: shear peel strength is It is 0.5 MPa or more at room temperature and 0.2 MPa or more at 150 ° C. Further, the shear elongation is 0.04 or more at room temperature and 150 ° C.

As is apparent from Table 1, the bonded bodies of Examples 1 to 15 were superior in shear peel strength and shear elongation as compared with the bonded bodies of Comparative Examples 1 to 8. On the other hand, in the joined body of Comparative Example 1, since the bonding agent is formed of a propylene resin having low heat resistance, the deterioration of the shear peel strength is more serious as the temperature rises. In the joined body of Comparative Example 2, since the M/Q ratio of the bonding agent was low and the adhesiveness was weak, the shear peel strength was lowered. In the joined body of Comparative Example 3, since the M/Q ratio of the bonding agent was high and the adhesiveness was strong, it was too soft, so the shear peel strength was lowered. In the joined body of Comparative Example 4, since the content of the thermally conductive filler of the bonding agent was too large, the adhesiveness was weak, and the shear peel strength was lowered. In the joined body of Comparative Example 5, since the fine particles of the thermally conductive filler were too small, the adhesiveness was weak, and the shear peel strength was lowered. In the joined body of the comparative example, since the average particle diameter of the coarse particles of the thermally conductive filler is too large, the adhesiveness is weak and the shear peel strength is lowered. In the bonded body of Comparative Example 7 and Comparative Example 8, since the content of the thermally conductive filler was too large, the adhesiveness was weak, and the shear peel strength was lowered.

[Thermal deterioration test of thermal conductivity]

Between the 10×t1 mm AlN round plate and the ×10×t2 mm Al round plate, each of the bonding agents of Examples 1, 5 to 9 and Comparative Examples 1, 4, and 7 to 11 was sandwiched in accordance with 25 The cut piece cut out of the size of 25 mm was subjected to a pressure heating step at 100 ° C and 14 atm (atm) to prepare a joined body. Then, after the endurance test was carried out for 500 hours in a state of 150 ° C, the thermal conductivity of each bonded body was measured by a laser flash method, and thermal deterioration of thermal conductivity was measured. Then, by subtracting the known thermal conductivity of AlN (90 W/mK) and Al (160 W/mK) from the measured thermal conductivity of the entire bonded body, the addition of the bonding agent monomer and the bonding interface was calculated. Thermal conductivity of the bonding layer of thermal impedance. The measurement results are shown in Table 2 below. The target value of the thermal conductivity is 0.30 W/mK or less.

In the bonded bodies of Comparative Examples 1, 4, and 7 to 11, the thermal conductivity of the bonding agent was lowered after the endurance test, and in the bonded bodies of Example 1, 5 to 9, 11 to 15, There was no case where the thermal conductivity of the bonding agent was lowered before and after the endurance test. Regarding the bonded bodies of Example 1, 5 to 9, 11 to 15, the reason why the thermal conductivity of the bonding agent was not lowered before and after the endurance test was because of the bonding in Example 1, 5 to 9, 11 to 15. In the body, the binder contains a base resin having substantially heat resistance, and the content of the M/Q ratio and the heat conductive filler is moderate, so that the adhesiveness of the binder can be sufficiently exhibited. On the other hand, in the bonded bodies of Comparative Examples 1, 4, and 7 to 11, the reason why the thermal conductivity of the bonding agent was lowered after the endurance test was because the bonded body of Comparative Example 1 had a low heat resistance. The propylene resin; the bonded body of Comparative Example 2, the M/Q ratio of the bonding agent was low, and the adhesiveness was weak; the bonded body of Comparative Example 3 had a high M/Q ratio of the bonding agent, and the adhesiveness was weak; Comparative Example 4, 7, 8 In the bonded body, the content of the thermally conductive filler was too large, so that the adhesiveness of the bonding agent was weak. In the bonded bodies of Comparative Examples 9 to 11, the content of the thermally conductive filler was too small.

[thermal cycle test]

Example 1 of the representative example extracted from the shear peeling test, 5 to 9, 13 to 15 and Comparative Examples 1 to 4 were sandwiched between a crystal holder for a semiconductor manufacturing apparatus made of AlN and a cooling plate made of Al. The bonding agent was subjected to pressure heating at 100 ° C and 14 atm (atm) to bond it, and the post-bonding and endurance test was carried out (after the temperature was raised from 30 ° C to 150 ° C, and then the temperature was lowered to 30 ° C. After the flatness, the flatness and the gas leak at the joint interface. Further, the dimensions of the crystal holder and the cooling plate for the semiconductor manufacturing apparatus are ψ300×t10 mm and ψ300×t30 mm, respectively. In addition, the gas leakage is evaluated by plugging the gas passage of the crystal holder for the semiconductor manufacturing apparatus, and exhausting the helium gas from the gas passage located in the cooling plate to the joint portion, and detecting the leak by helium gas (He). A leak detector is used to determine the amount of helium leak. The results are shown in Table 3 below. When the bonding agent for the semiconductor manufacturing apparatus and the cooling plate were bonded using the bonding agents of Examples 1, 5 to 9, and 13 to 15, no gas leakage was observed after the bonding and after the endurance test; When the bonding was carried out using the bonding agents of Comparative Examples 1 to 4, gas leakage occurred after 30 endurance tests. For the flatness, the examples 1, 5 to 9, 13 to 15 and the comparative examples 1 to 4 are all 30 μm or less, which are all in the range of practical use.

The embodiments of the present invention have been described above, but the above-described embodiments are merely illustrative of the technical content and drawings of the present invention, and are not intended to limit the present invention. That is, any refinements and modifications made by those skilled in the art based on the above-described embodiments, examples, and techniques employed are of course included in the scope of the present invention.

1‧‧‧Semiconductor wafer

2‧‧‧Crystal for semiconductor manufacturing equipment

3‧‧‧Cooling plate

3a‧‧‧Cooling medium supply channel

4‧‧‧Adhesive

5‧‧‧ gas passage

6‧‧‧Top pin hole

11‧‧‧AlN square plate

12‧‧‧Al square plate

13a, 13b‧‧‧ shear test fixture

Fig. 1 is a view showing the structure of a semiconductor supporting device according to an embodiment of the present invention.

Fig. 2 is a view showing the structure of a shear peeling test apparatus according to an embodiment of the present invention.

1‧‧‧Semiconductor wafer

2‧‧‧Crystal for semiconductor manufacturing equipment

3‧‧‧Cooling plate

3a‧‧‧Cooling medium supply channel

4‧‧‧Adhesive

5‧‧‧ gas passage

6‧‧‧Top pin hole

Claims (6)

A bonding agent for bonding a crystal holder for a semiconductor manufacturing apparatus and a cooling plate, characterized in that the bonding agent is formed of a hardened sheet body composed of an addition-hardening polyoxyalkylene adhesive, and the addition hardening The polyoxymethane adhesive comprises: polyorganosiloxane, containing more than 2 vinyl groups in one molecule; polyorganosiloxane resin containing R ₃ SiO _1/2 (R is not aliphatically unsaturated) a monovalent hydrocarbon group having 1 to 6 carbon atoms bonded to a bond (hereinafter referred to as M) and a SiO _4/2 unit (hereinafter referred to as Q), and a molar ratio of R ₃ SiO _1/2 unit/SiO _4/2 unit The (M/Q ratio) ratio is in the range of 0.6 or more and 1.6 or less; the polyorganooxyalkylene hydrogenated diene contains a hydrogen atom bonded to a ruthenium atom; the platinum catalyst; and the thermally conductive filler have a volume of 20% by volume or more. a content ratio of 50% by volume or less, wherein the thermally conductive filler is composed of fine particles having an average particle diameter of 1 μm or less and coarse particles having an average particle diameter of 10 μm or more and 30 μm or less in a numerical range such that the weight ratio thereof is 3: Particles formed by mixing in a range of 7 or more and 1:9 or less; The mixture is provided with a decane coupling primer layer at the bonding interface between the wafer holder for the semiconductor manufacturing apparatus and the cooling plate. The bonding agent according to claim 1, wherein the thermally conductive filler is formed of any of alumina, aluminum nitride or cerium carbide. A semiconductor supporting device comprising: a crystal holder for a semiconductor manufacturing device; a cooling plate; and a bonding agent for bonding the wafer holder for the semiconductor manufacturing device and the cooling plate, wherein the bonding agent is added Formed by a hardened sheet composed of a curable polyoxyalkylene adhesive, the addition-hardening polyoxyalkylene adhesive comprising: polyorganosiloxane, containing two or more vinyl groups in one molecule; polyorganoquinone An oxyalkylene resin containing R ₃ SiO _1/2 (R is a monovalent hydrocarbon group having 1 to 6 carbon atoms which does not have an aliphatic unsaturated bond) (hereinafter referred to as M) and a SiO _4/2 unit (hereinafter referred to as Q) And the ratio of the molar ratio (M/Q ratio) of the R ₃ SiO _1/2 unit/SiO _4/2 unit is in the range of 0.6 or more and 1.6 or less; the polyorganosiloxane is hydrogenated with a diene containing a ruthenium atom bond; a hydrogen atom; a platinum catalyst; and a thermally conductive filler having a content of 20% by volume or more and 50% by volume or less, wherein the thermally conductive filler has fine particles having an average particle diameter of 1 μm or less and an average particle diameter of Coarse particles in a numerical range of 10 μm or more and 30 μm or less, in order to The amount ratio is formed by mixing particles in a range of 3:7 or more and 1:9 or less; wherein a decane coupling system is provided at a joint interface between the bonding agent and the crystal holder for the semiconductor manufacturing apparatus and the cooling plate. Paint layer. A semiconductor supporting device according to claim 3, wherein The above thermally conductive filler is formed of any of alumina, aluminum nitride or tantalum carbide. The semiconductor supporting device according to claim 3, wherein the semiconductor manufacturing device has a crystal holder formed of any one of aluminum nitride, aluminum oxide, boron nitride or antimony trioxide, and the cooling plate is It is formed by either aluminum alloy or brass. The semiconductor supporting device according to claim 4, wherein the semiconductor manufacturing device has a crystal holder formed of any one of aluminum nitride, aluminum oxide, boron nitride or antimony trioxide, and the cooling plate is It is formed by either aluminum alloy or brass.