TW200847322A - Bonding material and semiconductor supporting device - Google Patents

Abstract

The bonding material is formed of a cured sheet composed of an addition curable silicone adhesive agent, and the addition curable silicone adhesive agent contains an organopolysiloxane containing two or more vinyl groups per molecule; an organopolysiloxane resin containing a unit (hereinafter, "M") represented by R3SiO1/2 (R is a monovalent hydrocarbon group having 1 to 6 carbon atoms and containing no aliphatic unsaturated bond) and a unit (hereinafter, "Q" ) represented by Si04/2 in molar ratio (M/Q ratio) equal to or more than 0.6 to equal to or less than 0.6 to 1.6; an organohydrogenpolysiloxane containing a silicon atom-bonding hydrogen atom; a platinum catalyst; and a heat conductive filler whose content falls within the range equal to or more than 20 vo1% to equal to or less than to 50 vol%.

Description

200847322 IX. EMBODIMENT OF THE INVENTION: TECHNICAL FIELD The present invention relates to a susceptor and a cooling plate for a semiconductor manufacturing device for bonding an electrostatic chuck or an electrostatic chuck with a heater. The bonding agent and the semiconductor supporting device having the crystal holder and the cooling plate for the semiconductor manufacturing device joined by the bonding agent. [Prior Art] Conventionally, a crystal holder for a semiconductor manufacturing device and a cooling plate for controlling the temperature of a germanium wafer substrate supported on a crystal holder for a semiconductor manufacturing device have used liquid polyoxyalkylene rubber and indium ( In) The metal layer or the acryl-based and epoxy-based organic adhesive is bonded (see Patent Documents 1, 2, and 3). [Patent Document 2] Japanese Laid-Open Patent Publication No. Hei No. Hei. No. Hei. No. Hei. No. 2002-231 797. Problem] When liquid crystal polysiloxane rubber is used to join a semiconductor wafer holder and a cooling plate, the volume of the liquid yarn rubber is reduced and the film is bent after bonding, so that the semiconductor manufacturing device is used. The flatness of the seat is reduced. And when using an indium-containing metal layer, indium itself will be made in it.

2081-9388-PF 6 200847322 I have been filthy in private, when... Furthermore, when the organic adhesive agent is used, "the heat resistance temperature of the organic adhesive is lower than that of the i heat. Therefore, there is a resistance - J: the main purpose is to solve the above problem for T" The plane of the crystal holder for the semiconductor manufacturing device can be maintained in a satisfactory manner. The agent which can be used as a source of contamination and has high heat resistance during the manufacturing process. Further, another object of the present invention is to provide a highly high-performance The flatness of the crystal holder for the semiconductor manufacturing device is maintained, and at the same time, the bonding layer between the crystal holder and the cooling plate for the two-body manufacturing device is prevented from becoming a semiconductor supporting device for polluting the thermal enthalpy during the manufacturing process. In order to solve the above problems, the semiconductor supporting device of the present invention includes: a crystal holder for a semiconductor manufacturing device, a cooling plate, and a bonding agent for a crystal holder and a cooling plate for a semiconductor manufacturing device. , the addition of a hardened sheet composed of an addition-hardening polyoxyalkylene adhesive, and the addition-hardening polyoxyalkylene adhesive includes: polyorgano-oxygen 1 molecule contains two or more vinyl groups; polyorganooxazepine tree 曰 ' contains LSiOw (R is a monovalent hydrocarbon group having 1 to 6 carbon atoms without an aliphatic unsaturated bond) unit (hereinafter referred to as M) And a ratio of (1)/2 units (hereinafter referred to as Q) and a molar ratio of RdiOw units/Si〇4/2 units in a range of 0.6 or more and 1.6 or less; polyorganooxyalkylene hydrogenated diene containing The ruthenium atom-bonded hydrogen atom; the platinum catalyst; and the thermal conductive filler have a content ratio of 20% by volume (vο1%) or more and 5% by volume or less. 2081-9388-PF 7 200847322 § M/Q ratio Dissatisfied with 〇β g 生 I,. υ· b, although the heat resistance is improved, the branability will become very easy _ ^ ..... # #1 1牛低, again, when the M/Q ratio exceeds h At 6 o'clock, the sex will become very easy to reduce. In addition, when the thermal conductive filler; ^ is less than 2 with respect to the whole body, the thermal conductivity will become; more than enough; Volume material, adhesion will reduce the text. Pay no [invention effect] Low according to the invention, can be used to maintain the semiconductor At the same time, at the same time, it can not become pollution 2 in the manufacturing process: high bonding agent. Furthermore, according to the invention, it is also possible to: maintain the plane of the crystal holder for the semiconductor manufacturing device In the same period of the same month, in the manufacturing process, the semi-conductor is not allowed to be integrated into the shop. (4) The connection between the sun and the sun and the cooling plate is used as the semiconductor support device with high heat resistance. 】 The bonding agent of the present invention is a hardened sheet formed by addition hardening. The ^ ^ /lacane adhesive composition is composed of: polyorganic-type poly-stone-oxygen burning adhesive, including polyorganisms Containing more than 2 kinds of ethyl fluorenyl groups; , 鸵 鸵 resin, containing R3Si〇] / bond furnace # τ e horse does not have aliphatic unsaturated bond number 1~6 of i-valent hydrocarbon group) The ratio of the molar ratio (M/Q ratio) of the K3bl0i/2 early ^/Si〇4/2 unit in the unit 2 (the following table is not shown), the ratio of the M/Q ratio of the K3bl0i/2 early ^/Si〇4/2 unit is above 6 & _ p person · 6 from the following range; decane weathering monoolefin, containing cesium atom bond media, · and hot filler wire, with. The muon, platinum ratio is below the content of %. , 2% by volume or more, and 5. volume

2081-9388-PF 200847322 Addition reaction hardening type polysulfide adhesive composition, which is preferably composed of the following components, and has (A) polyorganosiloxane, 7 s has more than 2 vinyl; () I organic decane resin, containing Luo U into fine two K3Sl0l / 2 (R is not the fat is not saturated bond carbon number 1 ~ 6 j ... We base) as well as Si〇4/2 unit, 1/2 early 兀/heart 04, 2 unit molar ratio is 0.6~1 6 · S (1HC): organic electrochlorinated dilute in 1 molecule Containing more than .3 (D) platinum-based catalysts; and (E) thermally conductive fillers. The vinyl content of the (2) component of the ear is 0.02~0.40 mol/best, 0.04~〇25 mol% ^ ^, the Zheng Zheng soldiers are better deaf. Right in the 〇.〇2 Mo The % of the ear is focused on and the maintenance power is reduced; if it is above G·μmol, the adhesion and adhesion are reduced. (Α ) $ is contained at the end of the molecular bond and/or the side chain. ♦ Organic Shixia Oxygen Burning is preferred. It can be oily or raw rubber. Its viscosity is LooohPa under 9R γ * * α 1 隹 25 c. 〇〇〇 [mpa. s]su ±m„ , , ” above is better, to limit, ^# red. In addition, the upper limit is not particularly limited. The use of & can be used to make the degree of polymerization 2 〇, and the following are more soil. The component (A) may be used singly or in combination of two or more.

For the _11 component, it is a polyorganic dream oxygen (tetra) grease, containing _ a unit U

Si〇4/2 unit ^The number of slopes of the key is 6! The price of the hydrocarbon group) and 16, the gas early carrier / unit of Mohbi. .6~ is better. 8~U is better, U~1.5 is better. If 嶋/2

2〇8l-9388-PF 200847322 Unit/Si0〇2 unit Moer than dissatisfied 〇·6, the adhesion and adhesion will be reduced; if it exceeds 1.6, the adhesion and maintenance will also decrease. (Β) The component may also contain a SiOH group, and the content of the oxime group may be 〇4 to 4% by weight. Further, the component (B) may be used in combination of two or more kinds. Further, as the R, for example, an alkyl group such as a methyl group, an ethyl group, a propyl group or a butyl group, a ring such as a ruthenium group or the like: a k group, a styl group or the like can be exemplified, and a methyl group is preferable. The mass of the CA) component and the (B) component is such that the ratio of the composition of the component of the component of the component (B) is 6 0 / 4 0 to 3 0 / 7 0 / 1 / earth, and if the ratio of the components of λ, 丄, and (Α) is too small, the adhesion force is lowered. Not applicable; on the other hand, if the proportion of the (1) component is too large, the adhesion will be lowered and not suitable, which is not preferable. From the viewpoint of dryness and releasability, in particular, the molar ratio of the R3Si〇1/2 unit/Si〇4/2 unit of the component (4) is 1〇15, and the composition and the component (B) are The mass ratio is preferably 5〇/5〇~4〇/6〇.

人 ^人成古分系 Crosslinking agent, which contains at least three S1H2 in one molecule: a preferred poly-hydrogenated diene is used, and a linear, branched or cyclic compound can be used. The amount of use of the component (C) is such that the component (c) is in the range of the ethylene group in the component (1): the phase is in the range of 5 to 25, and the specific band is such that the maintenance force is also lowered. When the point = her, even lower, at the same time in the production process of the adhesive sheet, the attachment force will shorten the usable time of the composition. When the coating is applied, the component (7) is a platinum-based catalyst, and examples thereof include an alcohol solution, a hydrazine platinic acid, and a chloroplatinic acid. Reactant, chloroplatinic acid and olefin compound

2081-9388-PF 10 200847322 A reactant, a reaction product of chloroplatinic acid with a vinyl group-containing decane, and the like. Among them, a reaction product of chloroperic acid and a vinyl group-containing decane is preferable, and is, for example, commercially available under the trade name CAT-PL-50T (manufactured by Shin-Etsu Chemical Co., Ltd.). The amount of the (Ε») component is preferably from 5 to 5 ppm by weight, and from 1 to 20 ppm, based on 100 parts by mass of the total of the components (A) and (B). Very good. If it is less than 5 ppm, the hardenability will be lowered, and the density of the crucible will be lowered, and the maintenance power will be lowered. If it exceeds 5 〇 〇 ppm, the usable time of the adhesive composition will be shortened.

The thermally conductive filler of the component (E) is preferably formed of any of alumina (Ah〇3), aluminum nitride (A1N) or ruthenium carbide (s丨c). The thermally conductive filler is composed of fine particles having an average particle diameter of $ i # m or less and coarse particles having an average particle size of # 4 1 GA m or more and 3Q # m or less, so that the weight ratio thereof is 3:7 or more. Particles mixed in a range of 1:9 or less are preferably formed. Thereby, the fine particles are filled between the coarse particles, so that the thermal conductivity is stabilized by m, and the lowest density can be maintained to maintain the low elasticity of the bonding agent, and the adhesion between the crystal holder and the cooling plate can be simultaneously provided. . In addition, when the average particle diameter of the thermally conductive filler is on the right side of 2 3°, the smoothness of the surface of the bonding agent is lowered, and the adhesion is also easily lowered. It is preferable that the joint surface of the bonding agent and the crystal holder and the cooling plate for the semiconductor manufacturing apparatus is coated with a pre-coating primer layer. Second, ^ - 糸乂 is preferably made of bismuth aluminum, aluminum oxide, boron nitride or germanium; the cooling plate is preferably formed of either aluminum alloy or K copper.

2081-9388-PF 11 200847322 If necessary, add an addition reaction control agent as (f) into a knife. The component (F) is used to prevent the sticking agent composition from sticking or coagulating in the heat-hardening arrow, τϋ°, and gradual change from the time of coating to the coating. The substance to be added by the gelation phenomenon is exemplified by a specific example of the alkyn-3-ol (F) component: 3-methyl-hydrazine-buty-3 methyl]-pentyne-3-alcohol, 3 , 5 —二曱基—卜己美^ — Alcohol, 1-ethynylcyclohexanol, methyl 9_ 旰 3 methyl-3 dimethyl oxime, its q ^ alkyne, 3-methyl- 3- dimethyl 其 r r / 7 / - soil 1 丁一 ^ d - 曱 甲 甲 甲 氧 氧 氧 卜 卜 卜 卜 卜 卜 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 Earth-based cyclohexane, bis(2,2-dimethyl A 3 butyl bis[methylformoxime, a T-volume-butynol, a 1,3,5, a tetramethyl-m? - tetraethylene and its broad soil) - methyl money, m ^ ethyl bentonyl tetraoxane, 1 1 3 q tetradecyl-1,3-divinyldioxane, and the like. , the ratio of the components of the components (3) to (7) is 范围 8 8 (β) 成为 U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U good. If the rut is ruined, it will decrease. ^Over 8" mass material, hardenability i.... The polyoxyxane adhesive composition of the present invention is additionally added to any component. For example, the composition of each component is a non-reactive polydimethyl phthalate, such as toluene, xylene, etc., which is used for reducing the fat of the burned, isomeric chain hydrocarbons, etc. Family solvent's agent, ketone solvent such as calcined, octyl butyl ketone; ethyl acetate, ethyl ethyl hydrazine, methyl iso 9 acetic acid isobutyl phthalate; diisopropyl ether, 1,4-dioxane Ester μ, J s day, etc. Ester is a solvent, a special solvent for the pit; a mixed solvent of the shell, an antioxidant, a Bismuth, a pigment, and the like. In addition, also

2081-9388-PF 12 200847322 A commonly used solvent which allows the adhesion of the composition can be used. The low amount of money makes it easy to apply the coating amount of the polyoxyalkylene adhesive composition, preferably 100 ^ 2 0 0 / m which is hardened. . In the case of hardening conditions, the addition reaction hardening type material can be hardened by 5 to 2 minutes at 9 〇 to 2 〇 c, but is not limited thereto. The bonding agent of the present invention is applicable to a semiconductor supporting device (4) provided with an element to be described later, as exemplified in Fig. i, and is a bonding agent 4 for bonding the semiconductor "m" and the cooling plate 3. The semiconductor support includes: a crystal holder for supporting the semiconductor wafer 1; 2: and a cooling medium supplied by the cooling medium supply port 3a for cooling: the semiconductor manufacturing device uses the crystal a 2 to control the semiconductor crystal The temperature of the round work is 3. The semiconductor support device shown in Fig. is formed by the following finer structure: a crystal holder 2 for a semiconductor manufacturing device; a cooling plate 3; a bonding agent 4; a gas passage 5' For supplying gas between the semiconductor wafer i and the wafer holder 2 for the semiconductor manufacturing device; and a top material locking hole 6 for inserting the top material lock to remove the semiconductor wafer 1 from the semiconductor manufacturing device wafer holder 2 Hereinafter, the best mode for carrying out the invention will be described. [Example 1] • B is contained at both ends of the molecular chain and contains R 3 Si 〇 /2 ( R is not in Example 1, first, an alkenyl group Polyorganotoxime 100 Parts of mass,

2081-9388-PF 13 200847322 A monovalent hydrocarbon group having 1 to 6 carbon atoms of an aliphatic unsaturated bond (hereinafter referred to as Μ) and a Si〇4/2 unit (hereinafter referred to as q), and (4) a unit/ The ratio of molar ratio (m/q ratio) of the SiOm unit is 180 parts by mass of the polyorganoboxane resin of hl, so that the polyorganodecane hydrogenated diene containing a hydrogen atom bonded to a halogen atom is relative to the vinyl group-containing The vinyl group in the polyorganosiloxane is such that the molar ratio of the SiH group in the composition is 15, the platinum catalyst, and the content of 20% by volume, and the average particle diameter is 〇. 7 # m a mixture of alumina (fine particles) and a thermally conductive filler having an average particle diameter of 2 Å "aluminum (crude particles) mixed at a weight ratio of iG: 9 G, and dissolved in toluene It becomes an addition-hardening type oxy-alloy adhesive and is applied to a PET release film, and then hardened by a hot air circulation dryer at (10) °C for 1 minute, and then hardened from the PET release film. Peeling off, a thickness of 12. "Example of the bonding agent." The receiver's placed the bonding agent on the square plate of various shapes (A1N square plate), and subjected to heat and pressure bonding for 10 minutes under conditions of 1 〇〇t and 14 hearts. The bonded body of Example i. [Example 2] In Example 2, except that the joints of A1 and A1N were previously coated with Shi Xiyuan and the primer layer, the other conditions were the same as those of the implementers. The bonded body of Example 2 was obtained. [Example 3] In Example 3, the weight ratio of the fine particles and the coarse particles was changed to

2081-9388- PF 14 200847322 30 : 70, except that the remaining chromium was the same as in Example 1, and the joined body of Example 3 was obtained. [Example 4] In Example 4, except that the weight ratio of the fine particles and the coarse particles was changed to 20:80, the other pieces of the last name t-1 were the same as those of Example 1, and the preparation was carried out. The joined body of Example 4. [Example 5] In the fifth embodiment, except for the volume %, the bonded body of the other condition 5 was used. The content of the thermally conductive filler was changed to 3 3 and the same as in Example 1 to prepare an example [Example 6] In Example 6, except for the weight of the fine particles and the coarse particles. The bonded body of Example 6 was prepared except that the ratio was changed to 20:80, and the other conditions were the same for each of the white shells. [Example 7] In Example 7, except that the pre-formed dome was not coated with a decane coupling primer layer on the joint faces of A1 and A1Ν, the beans and the Γ Γ Γ Γ In the same manner as in Example 6, the joined body of Example 7 was obtained. In addition to [Example 8], the remaining conditions are in Example 8, except that the M/Q ratio is changed to j.

2081-9388-PF 15 200847322 The same as in Example 6, the joined body of Example 8 was obtained. [Example 9] A bonded body of Example 9 was obtained in the same manner as in Example 8 except that the decane coupling primer layer was applied to the joint faces of A1 and A1N in advance. [Example 10] In Example 10, except that the M/Q ratio was changed to 〇·6, the same conditions as in Example 7 were carried out, and the joined body of Example 制 was obtained. [Example 11] In the shell example 1, the joint of the example i i was obtained except that the average particle diameter of the coarse particles was changed to 1 〇 # claw except that the conditions were the same as those of the above Example 7. [Example 12] r and also in Example 12, except that the average particle diameter of the coarse particles was changed to 30 μm, and the conditions were the same as in Example 7, and Example 12 was obtained. [Example 13] Example 5 In the joint n of Example 13 except for 0% by volume, the content of the thermally conductive filler was changed to /, and the remaining conditions were the same as in Example 7, and the preparation was carried out.

2081-9388-PF 16 200847322 [Example 1 4] In the same manner as in Example 7, except that the material of the thermally conductive filler was changed to the nitrided chain (A1N) in the same manner as in Example 7, The joined body of Example 14. [Example 1 5] In the same manner as in Example 7 except that the material of the heat conductive filler was changed to the carbonization race, S1C, in the same manner as in Example 7, the joint of Example 15 was obtained. body. [Comparative Example 1] In Comparative Example 1, a propylene resin containing a heat conductive filler containing 30% by volume of the average granules 1 〇β m was prepared, and the propylene resin was used to join A1 and A1N. Comparative Example} of the joined body. [Comparative Example 2] C Reference In Comparative Example 2, except that the M/Q ratio was changed to 0 4, the same conditions as in Example 6 were carried out, and the joined body of Comparative Example 2 was obtained. [Comparative Example 3] In Comparative Example 3, except that the m/Q ratio was changed to L7, the same conditions as in Example 6 were carried out, and the joined body of Comparative Example 3 was obtained.

[Comparative Example 4] 2081-9388-PF 17 200847322 In Comparative Example 4, except that the content of the thermally conductive filler was changed to 60% by volume, the other conditions were the same as in Example 6, and Comparative Example 4 was obtained. Joint body. [Comparative Example 5] In Comparative Example 5, except that the weight ratio of the fine particles and the coarse particles was changed to 5 · 95, the same conditions as in Example 7 were carried out, and the joined body of Comparative Example 5 was obtained. [Comparative Example 6] In Comparative Example 6, except that the average particle diameter of the coarse particles was changed to 40 // m, the other conditions were the same as in the case of Example 7, and the bonded body of Comparative Example 6 was obtained. Example 7] The bonded body of Comparative Example 7 was obtained in the same manner as in Comparative Example * except that the material of the thermally conductive filler was changed to Nitrile (A1N). [Comparative Example 8] In Comparative Example 8, except that τ% of the material of the thermally conductive filler was changed to cerium carbide (S i C ), the other conditions were the same as those of Comparative Example 4, and the joint of Comparative Example 8 was obtained. body.

[Comparative Example 9] 2081-9388-PF 18 200847322 In the case of Example 9, except that the content of the thermally conductive filler was changed to 15% by volume, the rest of the conditions were the same as in Example 7, and a comparative example was prepared.接合 接合 接合. [Comparative Example 10] In Comparative Example 10, except that the material of the thermally conductive filler was changed to aluminum nitride (A1N), the same conditions as in Comparative Example 9 were carried out, and a joined body of Comparative Example 10 was obtained. [Comparative Example 11] In Comparative Example 11, except that the material of the thermally conductive filler was changed to carbonization (SiC), the other conditions were the same as those of tb, and the joined body of Comparative Example 11 was obtained. [Shear peeling test] 1 2, a square plate u made of A1N having a thickness of 10 mm by the above-described embodiment i X was sandwiched, respectively.

2081-9388-PF See 25mm X length 35mni and A1 square plate 12, each of the cements of Comparative Examples 1 to 8 is cut, and is in loot:, 14 ^

The joint was produced. However, the test device is at room temperature and 1 C 19 200847322 at room temperature of o. 5 MPa or more, at 15 (rc is above ostrich; and about shear elongation) at room temperature, 15 皆It is _〇4 or more. ' It is apparent from Table 1 that the bonded body of Example 15 has better shear peel strength and shear elongation than the bonded body of Examples 1 to 8. On the other hand, in the bonded body of Comparative Example}, since the bonding agent is formed of a heat-sensitive acrylic resin, the deterioration of the peeling strength of the female cut becomes more serious as the temperature rises. In the joint of the ", the M/Q of the bonding agent is pure, and the adhesiveness is weak, so the shear peel strength is lowered. In the bonded body of Comparative Example 3, since the M/Q ratio of the bonding agent is high and the adhesion is strong, Therefore, the shear peel strength was lowered, and the shear peel strength was lowered. In the joined body of Comparative Example 4, since the content of the heat conductive filler of the contact agent was too large, the wetness was weak and the shear peel strength was lowered. In the bonded body, since the fine particles of the thermally conductive filler are too small, the adhesiveness is weak and shear peeling is performed. In the bonded body of the comparative example, since the average particle diameter of the coarse particles of the thermally conductive filler is too large, the adhesiveness is weak, and the shear peel strength is lowered. In the joined bodies of Comparative Example 7 and Comparative Example 8, Since the content of the thermally conductive filler is too large, the adhesiveness is weakened, and the shear peel strength is thus lowered. Further 2081-9388 - PF 20 200847322 20OO1-9388-PF 21

Comparative Example 8 Comparative Example 7 Comparative Example 6 | Comparative Example 5 I Comparative Example 4 | Comparative Example 3 1 Comparative Example 2 Comparative Example 1 Example 15 1 Example 14 1 Example 13 | Example 12 Example 11 Example 10 Implementation Example 9 Example 8 Example 7 Example 6 Example 5 Example 4 Example 3 Example 2 Example 1 | 1 s standard value j Acryl resin adhesive material 00 I· Alumina alumina Alumina oxide oxidation Aluminium Aluminium Oxide CO 1—·· o > »—· Oxidation Ming I Alumina Alumina Alumina Alumina Alumina Alumina Alumina Alumina Alumina Alumina Alumina 1 Alumina 1 \ Filler Material g CO oo GO CO g CO oo CO CO CaD GO CO OO g CO oo CO Ού OO oo CO CO CO GO CJ oo CO GO CO CO sg ) Record 〇 &•<1 〇CD -<1 ◦ Ο) ooo -«J CD -<1 CD -<lo cz> ◦ ◦ -o CZ) ◦ -<I o -o Q -<1 ο ◦ 〇-<I -<l \ Average particle size of fine filler Gs DO CD gg ►~ι sg dad ggggggs \ coarse gg ΟΊ CO CJ1 ggg CD gg IND CD sggggggg 1—as » -A ο »—A CD \ Λ· t and 谗 谗 gg oo 〇gggggggggggggg OO gg tearing and tearing · 澌» tearing · tearing private · oblique tearing » private · \ primer coating Η-* I-* H-* ►—* HA H-* H—4 >—a H-* -<] CD )—* h—1 h—4 HA C5 7 CJl CJl μ—i »—1 ►—a H —1 »~» Ι—ι Η—* »—* H—i \ M/Q ratio ο IND a o oo O CO DO o CZ) go DO CJ1 o 00 01 O CJD CO CD oo oo CD oo CO ◦ CD OO CT^ CD oo ΟΊ o oo CD oo CD o OO CJl 〇g CD OO DO 〇cz> oo GO CZ) >0.5 丨Shear shear strength at room temperature (MPa) ο 3 CD gc=> »-—a CD H-4 <=> § og Q CJ1 c=> ►-» C=) CD oo Private CD CO CO 〇> IND OO CD CO oo ◦ oo CD OO to CD oo tsD CD IND CJl o CO CJl C> IND ◦ CO CD IND σ> ◦ IND Ού CD CO CO CD IND CO >0.2 150°C ί_ CD CO CD g »—a OO CD C3 Private CO CD s <=><=> CO an 〇g an ◦ s CD C3 CD CJ1 0.062 CD 2 CP <=> CD CX) CJl 0. 064 0.065 0.065 0.068 0.062 0.058 0.049 0.050 ◦ CD CD s CT) 0.048 > 0.04 room temperature elongation os on CD S cn os CJl o CD OO CJ1 CD s Ol CD ◦ to o CD V-1 CJ1 o CD EsD OO ◦ ◦ an I 0.049 II 0.044 I o ◦ I 0.047 I 0.052 | | 0.052 | 0.047 0. 048 | 0.045 | 0.045 | 0.048 | ◦ ◦ CD CZD cn | 0.044 | 丨>0.04 | 150°C 200847322 [Thermal Deterioration Test of Thermal Conductivity] A1N of Yubi 1〇X tlmm Between the round plate and the A1 round plate of 0 10 X t2 mm, the respective joints of Examples 1, 5 to 9 and Comparative Examples 1 4 7 to 11 were cut in accordance with the size of 25 x 25 mm. The mixture was subjected to a pressure heating step at 1 00 C and 14 atm (atm) to prepare a joined body. Then, after the endurance test was carried out for 5 hours in a state of 150 ° C, the thermal conductivity of each bonded body was measured by a laser flash method, and the thermal deterioration of the thermal conductivity was measured. Then, by subtracting the known thermal conductivity of AIN (90 W/mK) and A1 (160 W/mK) from the measured thermal conductivity of the entire bonded body, the addition of the bonding agent monomer and the bonding interface was calculated. Thermal conductivity of the bonding layer of thermal impedance. The measurement results are shown in Table 2 below. The target value of thermal conductivity is 〇·30W/mK or less. In the bonded body of Comparative Examples 1, 4, and 7 to 11, the thermal conductivity of the bonding agent was lowered after the endurance test, and in Examples 丨, 5 to 9, in the joined body of the workman-15, There was no decrease in the thermal conductivity of the bonding agent before and after the endurance test. Regarding the first embodiment, the access bodies of 5 to 9, 11 to 15 did not cause a decrease in the thermal conductivity of the bonding agent before and after the endurance test because it was in Examples 1, 5 to 9, 11 to 15 In the joined body, the bonding agent contains a base resin having substantially heat resistance, and the content of the M/Q ratio and the heat conductive filler is moderate, so that the adhesiveness of the bonding agent can be sufficiently exhibited. On the other hand, in the bonded bodies of Comparative Examples 1, 4, and 7 to 11, the reason why the thermal conductivity of the bonding agent was lowered after the long-term test was because the bonded body of Comparative Example 1 had a low heat resistance. The propylene resin; the joint of Comparative Example 2, 2081-9388-PF 22 200847322 The binder has a low M/Q ratio and weak adhesion; the joint agent of Comparative Example 3 has a high M/Q ratio and weak adhesion; In Examples 4, 7, the content of the bonded filler of the bonded body was too large, so that the adhesiveness of the bonding agent was weak. In the bonded bodies of Examples 9 to 11, the content of the thermally conductive filler was too small. Joint heat transfer comparison 2081-9388-PF 23 200847322 20818丨PF 24 Comparative Example 11 Comparative Example 10 Comparative Example 9 Comparative Example 8 Comparative Example 7 Comparative Example 4 Comparative Example 3 Comparative Example 2 Comparative Example 1 Example 15 | Example 14 | Example 13 Example 12 I Example 11 Example 9 Example 8 1 Example 7 1 Example 6 1 Example 5 Example 1 Target value propylene resin adhesive material CO 1 — · ο > »—» Alumina GO 〇> Alumina alumina alumina alumina GO I-» * o > Η-1 Alumina alumina Alumina alumina Alumina alumina Alumina alumina Alumina\ Filler material»—* αι &gt ;—A ΟΊ »—ι CJ1 CD 〇CD CD CT5 CD GO CO CO Ού CO CO CO CO ΟΊ OO OO CO OO CO CO CO CO CO GO OO CO CO CO CO g W pr d gt ◦ 〇 CD CD Q —a ◦ -<1 <=> ◦ CD o ◦ CD -<1 CZ) -<1 CD -<1 c=) o ο \ Fine particle filler average particle size gsggggg »—A ◦ IND CD gg an ogggggg \ coarse ggg CO ogg IND ◦ g CD Η—ι cz> CD IND CD DO ◦ g IN D CZ) ggg INO CD gt-1 CZ5 o \鲰f· c^· 谗蓥 dog rggggg § gggggg (X gggg CD CD CD Shenzhen - oblique tearing tearing 埘 tearing tearing tearing · 澌 底 底 底 底 底 底 底—«* H—i »—A ί_1 i—* H—AH—l H—i H-* 1—i —<I <〇»—<* H—* Η-* »—l H— ^ »—A Η-1 I—^ CJl ►—* CJl 1—A η-a 1—^ t—i »—A \ M/Q ratio<3> to ◦ g C5 CO cn 〇CO CD CD IND CO ◦ CO CsD CZ) Private cn ◦ CD ◦ g ◦ CD CJl CD σ> to ◦ CJl ο cn cn O an cn cn cn OO ◦ cn CO C3 CJl o CJl C71 0.32 > 0.30 Thermal conductivity of the bonding layer before endurance test ;1 (W/mK) ◦ to to ◦ OO ◦ to GO ◦ CO CO CD IND CO CD tsD Q CD CO cn 〇g CD 1 to ◦ 1 CD 7 o CJl cn ◦ CJl cn o CJl Q CJl CD ai CD CJl OO <=> cn ai O GO H—* >0.30 After the endurance test 200847322 » [Thermal cycle test] Between the crystal holder of the A1N semiconductor manufacturing device and the cooling plate made of A1 Example 1, 5 to 9, 13 to 15 of the representative example extracted by the peeling test and The bonding agents of Examples 1 to 4 were subjected to pressurization heating at 1 ° C and 14 atm (atm) to bond them, and the post-bonding and endurance test (applied from 30 ° C to 150 ° C) was evaluated. After that, the flatness after cooling to 30 c for 3Q times) and the gas leakage at the joint interface (gas 1 eak ). In addition, the size of the crystal holder and the cooling plate for the semiconductor manufacturing device is < 0 30 0 X tl0_, Φ 300 X t30 mm. In addition, the evaluation of the gas leakage is to plug the gas passage of the crystal holder for the semiconductor manufacturing apparatus, and to exhaust the helium gas from the gas passage located in the cooling plate to the joint portion, and then check the helium gas (He). A leak detector is used to determine the amount of gas bubble leakage. The results are shown in Table 3 below. When the bonding agent of the embodiment 丨, 5 to 9, 13 -15 was used to bond the crystal holder and the cooling plate for the semiconductor manufacturing apparatus, no gas leakage was observed after the bonding and after the endurance test; When the bonding was carried out using the bonding agents of Comparative Examples 1 to 4, gas leakage occurred after 30 endurance tests. For the flatness, the examples 1, 5 to 9, 13 to 15 and the comparative examples 1 to 4 to 0 Λ and the white horses 30 / m or less are all in the range of practical use. 2081-9388-PF 25 200847322 2081-9388-PF 26 1 Comparative Example 4 Comparative Example 3 Comparative Example 2 | Comparative Example 1 | Example 15 Example 14 | Example 13 Example 9 | Example 8 Example 7 | Example 6 Example 5 Example 1 Target value Binder resin \ Adhesive material Alumina alumina Alumina oxide GO H-*· o >Η-< Alumina oxide oxidation Ming alumina oxidation i Lu oxidation i Lu Alumina\Filling Material CO CO GO CO CO GO GO CO GO GO GO CO CO GO CO CO CO CO Ού g \ * Pr ί ◦ CD CD i CD Ο CD CD cz> CD CD ο —α CD \ Average grain size of grain filler ggg »—* gsgggsg \ coarse grain ggg CD I—i ◦ CD sggggsg Η—* ►—* CD \ \ 釉 * 决 ^ tgggggggggggg P 澌埘 斩澌澌 斩澌澌 底 底 底 底 底 底 底i ►—a I—^ 1 1—^ H-* >—* l—i ►—4 CJ1 Η-1 CJ1 H- H-1 ►—1 Η-a »—X 1—* »—* \ M/Q ratio 7. 0E-06 6. 4E-07 2. 5E-07 3.4E-10 3. 9E-10 3.8E-10 3.IE-10 3. IE-10 2.8E-10 4. 2E- 10 2.5E-10 3. 5Ε-10 CO o »—A CD | C1E-09合H® ^ Q >Sr 1 1 3. 0E-08 1.5E-07 4.2E-10 3.4E-10 3.3E-10 3.5E-10 2.2E-10 3.2E-10 4.6E-10 3.3 Ε-10 CO 1—^ W ◦ <1E_09 After the endurance test 200847322 or more, although it has been applied to the implementers of the present invention, the above-exemplified embodiments are only used to illustrate the description of the present invention. Some of the technical content and drawings are not intended to be limited to a month, that is, those who are concerned with the technical field, based on the above-mentioned embodiments, examples and applications (4), are all included in the text. The scope of protection of the invention is hereby attached. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing the structure of a semiconductor supporting device according to an embodiment of the present invention. Fig. 2 is a view showing the structure of a shear peeling test apparatus according to an embodiment of the present invention. [Description of main component symbols] 1 to semiconductor wafer 2 to semiconductor manufacturing device crystal holder 3 to cooling plate 3a to cooling medium supply path 4 to bonding agent 5 to gas passage 6 to top material pin hole 11 to A1N square plate 1 2~A1 square plate 13a, 13b~ shear test fixture

2081-9388-PF 27

Claims (1)

200847322 X. Patent Application Range: 1. A bonding agent for bonding a crystal holder for a semiconductor manufacturing device and a cooling plate, characterized in that the bonding agent is composed of an addition hardening type polyoxo solder adhesive. Formed by the sclerosing sheet, the addition-hardening polyoxyalkylene adhesive comprises: polyorgano oxy- sulphur' contains 2 or more ethylene groups in one molecule; polyorgano siloxane resin containing RsSiO^ ( R is a monovalent hydrocarbon group having 1 to 6 carbon atoms which does not have an aliphatic unsaturated bond (hereinafter referred to as M) and a Si〇4/2 unit (hereinafter referred to as q), and R3Si〇i/2 unit/Si莫4/2 Early elemental molar ratio (M/Q ratio) is in the range of 〇·6 or more and 1.6% or less; polyorganooxy hydride hydrogenated diene containing ruthenium atom-bonded hydrogen atom; The medium and the thermally conductive filler have a content ratio of 20% by volume or more and 50% by volume or less. 2. The bonding agent according to claim 1, further comprising a k: coupling primer layer disposed on a bonding interface between the bonding agent and the crystal holder for the semiconductor manufacturing device and the cooling plate. 3. The bonding agent according to claim 1 or 2, wherein the thermally conductive filler is formed of alumina, aluminum nitride or tantalum carbide. 4. The bonding agent according to Item 2 or 3, wherein the thermally conductive filler is coarse in a numerical range of the following numerical ranges of the fine particles 2081-9388-PF 28 200847322 having an average particle diameter of "(4)" or less; In the range of 1:9 or less, the average particle diameter is 丨〇# m or more, and the 3 〇vm particles are formed by mixing particles having a weight ratio of 3:7 or more. A semiconductor supporting device comprising: a crystal holder for a semiconductor manufacturing device; a cooling plate; and a bonding agent for bonding the wafer holder for the semiconductor manufacturing device and the cooling plate, The bonding agent is formed of a cured sheet composed of an addition-curable polyoxyalkylene adhesive, and the addition-curable polyoxyalkylene adhesive comprises: polyorganosiloxane, in one molecule Containing two or more vinyl·, polyorganosiloxane products, containing R3Si〇i/2 (R is a monovalent hydrocarbon group having 1 to 6 carbon atoms without an aliphatic unsaturated bond) (hereinafter referred to as M) And the Si〇4/2 unit (hereinafter referred to as Q), and the ratio of the molar ratio (M/Q ratio) of the R3Si〇"2 unit/Si〇w unit is in the range of 〇·6 or more and 丨·6 or less. A polyorganosecond oxyalkylene hydrogenated diene containing a ruthenium atom-bonded hydrogen atom; a platinum catalyst; and a thermally conductive filler having a content ratio of 20% by volume or more and 50% by volume or less. The semiconductor supporting device according to claim 5, further comprising a smelting coupling primer layer disposed on the bonding interface between the bonding agent and the crystal holder for the semiconductor manufacturing device and the cooling plate. 29 2081-9388-PF 200847322 The semiconductor support package of claim 6 is made of alumina, aluminum nitride or tantalum carbon. 7. The method of claim 5, wherein any of the above thermally conductive filler compounds are formed. In the semiconductor supporting device according to Item 5, 6, or 7, wherein the thermally conductive filler is composed of fine particles having an average particle diameter of not more than m# m or more, 30//^ The coarse particles in the following numerical ranges are formed by mixing particles of Cao & D, and 垔 比 ratio in a range of 3:7 or more and i:9 or less. 9 · The semiconductor supporting device according to the patent application No. 5g, 7 ★ ^ b 6 7 or 8 wherein the above-mentioned semiconductor manufacturing method is based on the use of a crystal system by aluminum nitride, oxidized, and nitrided. It is formed by any one of boron or antimony trioxide, and the above cooling plate is formed by any of Shao alloy and brass. 2081-9388-PF 30