JP5016510B2 - Semiconductor support equipment - Google Patents

Description

  The present invention relates to a bonding agent for bonding a susceptor for a semiconductor manufacturing apparatus such as an electrostatic chuck or an electrostatic chuck with a heater to a cooling plate, and a semiconductor support device including the susceptor for a semiconductor manufacturing apparatus and a cooling plate bonded by the bonding agent. .

Conventionally, a susceptor for a semiconductor manufacturing apparatus and a cooling plate for controlling the temperature of a Si wafer substrate held on the susceptor for a semiconductor manufacturing apparatus are a liquid silicone rubber, a metal layer containing indium (In), or an acrylic or epoxy resin. It was joined by a system organic adhesive (see Patent Documents 1, 2, and 3).
JP-A-4-287344 JP-A-3-3249 Japanese Patent Laid-Open No. 2002-231797

  However, when a susceptor for a semiconductor manufacturing apparatus and a cooling plate are bonded using liquid silicone rubber, warpage occurs after bonding due to volume shrinkage when the liquid silicone rubber is cured, and the flatness of the susceptor for semiconductor manufacturing apparatus decreases. There is. In addition, when a metal layer containing In is used, In may become a contamination source in the manufacturing process. In addition, when an organic adhesive is used, the heat resistance temperature of the organic adhesive is as low as about 100 [° C.], so that there is a problem in terms of heat resistance.

  The present invention has been made in order to solve the above-described problems, and an object of the present invention is to maintain a high flatness of a susceptor for a semiconductor manufacturing apparatus and to prevent contamination from occurring in the manufacturing process. Is to provide. Another object of the present invention is to maintain a high degree of flatness of a susceptor for a semiconductor manufacturing apparatus and to prevent a bonding layer between a susceptor for a semiconductor manufacturing apparatus and a cooling plate from becoming a contamination source in the manufacturing process. To provide an apparatus.

In order to solve the above problems, a semiconductor support device according to the present invention includes a susceptor for a semiconductor manufacturing apparatus, a cooling plate, and a bonding agent that joins the susceptor for the semiconductor manufacturing device and the cooling plate. The bonding agent is formed of a cured sheet made of an addition-curable silicone pressure-sensitive adhesive, and is composed of an organopolysiloxane containing two or more vinyl groups per molecule and R ₃ SiO _1/2 (R is an aliphatic unsaturated bond). A unit represented by a monovalent hydrocarbon group having 1 to 6 carbon atoms) (hereinafter referred to as M) and a unit represented by SiO _4/2 (hereinafter referred to as Q) as R ₃ SiO _1/2 units. / SiO _4/2 unit organopolysiloxane resin containing a molar ratio (M / Q ratio) in the range of 0.6 or more and 1.6 or less, and organohydrogen poly containing silicon-bonded hydrogen atoms It contains siloxane, a platinum catalyst, and a thermally conductive filler having a content of 20 [vol%] or more and 50 [vol%] or less.

  When the M / Q ratio is less than 0.6, the heat resistance is improved, but the adhesiveness tends to be lowered. Also, when the M / Q ratio exceeds 1.6, the adhesiveness tends to be lowered. Moreover, when the content rate of a heat conductive filler is less than 20 [vol%] with respect to the whole system, heat conductivity becomes inadequate, and when it exceeds 50 [vol%] conversely, adhesiveness falls. .

  According to the present invention, it is possible to provide a highly heat-resistant bonding agent that maintains high flatness of a susceptor for a semiconductor manufacturing apparatus and does not become a contamination source in the manufacturing process. Further, according to the present invention, there is provided a highly heat-resistant semiconductor support device that keeps the flatness of a susceptor for a semiconductor manufacturing apparatus high and does not cause a bonding source between a susceptor for a semiconductor manufacturing apparatus and a cooling plate in a manufacturing process. Can be provided.

The bonding agent according to the present invention is formed by a cured sheet made of an addition-curable silicone pressure-sensitive adhesive, and the addition-curable silicone pressure-sensitive adhesive includes an organopolysiloxane containing two or more vinyl groups per molecule, and R ₃ SiO. A unit represented by _1/2 (R is a monovalent hydrocarbon group having 1 to 6 carbon atoms not having an aliphatic unsaturated bond) and a unit represented by SiO _4/2 (hereinafter Q And an organopolysiloxane resin containing a molar ratio of R ₃ SiO _1/2 units / SiO _4/2 units (M / Q ratio) in the range of 0.6 to 1.6, An organohydrogenpolysiloxane containing silicon-bonded hydrogen atoms, a platinum catalyst, and a thermally conductive filler having a content of 20 [vol%] or more and 50 [vol%] or less are contained.

The addition reaction curable silicone pressure-sensitive adhesive composition is preferably
(A) a diorganopolysiloxane having two or more vinyl groups in one molecule;
(B) R ₃ SiO _1/2 unit (R is a monovalent hydrocarbon group having 1 to 6 carbon atoms having no aliphatic unsaturated bond) and SiO _4/2 unit, and R ₃ SiO _1/2 unit Organopolysiloxane resin having a molar ratio of / SiO _4/2 units of 0.6 to 1.6,
(C) An organohydrogenpolysiloxane containing three or more SiH groups in one molecule (D) a platinum-based catalyst, and (E) a composition containing a thermally conductive filler.

  (A) Vinyl group content in a component becomes like this. Preferably it is 0.02-0.40 [mol%], More preferably, it is 0.04-0.25 [mol%]. If it is 0.02 [mol%] or less, the adhesive strength and holding power decrease, and if it is 0.40 [mol%] or higher, the adhesive strength and tack decrease.

  The component (A) is preferably a chain organopolysiloxane containing a vinyl group at the molecular chain terminal and / or side chain, and may be in the form of oil or raw rubber, and its viscosity is 1000 [at 25 [° C.]. mPa · s] or more, particularly preferably 10,000 [mPa · s] or more. The upper limit is not particularly limited, but is preferably selected so that the degree of polymerization is 20,000 or less. (A) A component can be used individually by 1 type or in combination of 2 or more types.

The component (B) contains R ₃ SiO _1/2 units (R is a C 1-6 monovalent hydrocarbon group having no aliphatic unsaturated bond) and SiO _4/2 units, and R ₃ SiO Organopolysiloxane having a molar ratio of _1/2 unit / SiO _4/2 unit of 0.6 to 1.6, preferably 0.8 to 1.5, and more preferably 1.0 to 1.5. If the molar ratio of R ₃ SiO _1/2 unit / SiO _4/2 unit is less than 0.6, the adhesive force and tack may be reduced, and if it exceeds 1.6, the adhesive force and holding force may be reduced. . The component (B) may contain SiOH groups, and the OH group content may be 0 to 4.0 [wt%]. Moreover, 2 or more types of (B) component may be used together. Examples of R include an alkyl group such as a methyl group, an ethyl group, a propyl group, and a butyl group, a cycloalkyl group such as a cyclohexyl group, a phenyl group, and the like, and a methyl group is preferable.

  The mass ratio of the component (A) to the component (B) is 80/20 to 20/80, preferably 60/40 to 30/70. When the blending ratio of the component (A) is too small, there is an inconvenience that the tack force is lowered. On the other hand, when the blending ratio of the component (A) is too large, there is a disadvantage that the adhesive force is lowered.

From the viewpoint of adhesiveness and peelability, the molar ratio of R ₃ SiO _1/2 unit / SiO _4/2 unit of component (B) is 1.0 to 1.5, and (A) component and ( It is more preferable that mass ratio with B) component is 50 / 50-40 / 60.

  Component (C) is a cross-linking agent, which is an organohydropolysiloxane having at least 3, preferably 4, SiH groups in one molecule, and linear, branched, cyclic, etc. can be used.

  Component (C) is preferably used in such an amount that the molar ratio of SiH groups in component (C) to vinyl groups in component (A) is in the range of 1 to 25, particularly 5 to 20. If it is less than 1, the crosslink density is lowered, and the holding power may be lowered accordingly. If it exceeds 25, the adhesive strength and tack are lowered, or the pressure-sensitive adhesive composition at the time of coating in the production of the pressure-sensitive adhesive sheet is reduced. The usable time may be shortened.

  Component (D) is a platinum catalyst, containing chloroplatinic acid, an alcohol solution of chloroplatinic acid, a reaction product of chloroplatinic acid and alcohol, a reaction product of chloroplatinic acid and an olefin compound, and containing chloroplatinic acid and a vinyl group Examples include a reaction product with siloxane. Among them, a reaction product of chloroplatinic acid and vinyl group-containing siloxane is preferable, and is commercially available as trade name CAT-PL-50T (manufactured by Shin-Etsu Chemical Co., Ltd.).

  The amount of component (D) added is preferably such that the platinum content is 5 to 500 [ppm], particularly 10 to 200 [ppm] based on 100 parts by mass of the total of components (A) and (B). If it is less than 5 [ppm], the curability is lowered, the crosslinking density is lowered, and the holding power may be lowered. If it exceeds 500 [ppm], the usable time of the pressure-sensitive adhesive composition at the time of coating is shortened. There is a case.

The thermally conductive filler of component (E) is preferably formed of any one of aluminum oxide (Al ₂ O ₃ ), aluminum nitride (AlN), and silicon carbide (SiC).

  The heat conductive filler has a weight ratio of 3: 7 or more to fine particles having an average particle diameter of 1 [μm] or less and coarse particles having an average particle diameter of 10 [μm] to 30 [μm]. It is desirable to be formed of particles mixed so as to be in a range of 1: 9 or less. Thereby, the fine particles are filled between the coarse particles, and the thermal conductivity is stabilized. Further, by achieving close packing, adhesion between the susceptor for a semiconductor manufacturing apparatus and the cooling plate can be improved while maintaining low elasticity of the bonding agent. In addition, when the average particle diameter of a heat conductive filler will be 30 [micrometers] or more, adhesiveness will fall easily by the smoothness of the bonding agent surface falling.

  It is desirable to apply a silane coupling primer in advance to the bonding surfaces of the bonding agent, the susceptor for the semiconductor manufacturing apparatus, and the cooling plate. The susceptor for semiconductor manufacturing apparatus may be formed of any one of aluminum nitride, aluminum oxide, boron nitride (BN), and yttria, and the cooling plate may be formed of any of aluminum alloy and brass. desirable.

  If necessary, an addition reaction control agent can be added as the component (F). The component (F) is added to prevent the pressure-sensitive adhesive composition from thickening or gelling before heat curing when preparing or coating the silicone pressure-sensitive adhesive composition.

  Specific examples of the component (F) include 3-methyl-1-butyn-3-ol, 3-methyl-1-pentyn-3-ol, 3,5-dimethyl-1-hexyn-3-ol, 1- Ethynylcyclohexanol, 3-methyl-3-trimethylsiloxy-1-butyne, 3-methyl-3-trimethylsiloxy-1-pentyne, 3,5-dimethyl-3-trimethylsiloxy-1-hexyne, 1-ethynyl-1 -Trimethylsiloxycyclohexane, bis (2,2-dimethyl-3-butynoxy) dimethylsilane, 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetrasiloxane, 1,1,3 , 3-tetramethyl-1,3-divinyldisiloxane and the like.

  The blending amount of the component (F) is preferably in the range of 0 to 8.0 parts by mass, particularly 0.05 to 2.0 parts by mass with respect to 100 parts by mass in total of the components (A) and (B). Is preferred. If it exceeds 8.0 parts by mass, the curability may be lowered.

  In addition to the above components, optional components can be added to the silicone pressure-sensitive adhesive composition according to the present invention. For example, non-reactive organopolysiloxanes such as dimethylpolysiloxane and dimethyldiphenylpolysiloxane, aromatic solvents such as toluene and xylene for reducing the viscosity during coating, and aliphatic systems such as hexane, octane and isoparaffin Solvents, ketone solvents such as methyl ethyl ketone and methyl isobutyl ketone, ester solvents such as ethyl acetate and isobutyl acetate, ether solvents such as diisopropyl ether and 1,4-dioxane, or mixed solvents thereof, antioxidants, dyes, And pigments. Usually, a solvent is used to lower the viscosity of the composition and facilitate coating.

  The coating amount of the silicone pressure-sensitive adhesive composition can be selected so that the thickness of the pressure-sensitive adhesive layer after curing is 50 to 300 [μm], preferably 100 to 200 [μm].

  As the curing conditions, those of addition reaction curing type can be set to 90 to 120 [° C.] and 5 to 20 [min], but are not limited thereto.

  The bonding agent according to the present invention cools the susceptor 2 for a semiconductor manufacturing apparatus with a susceptor 2 for supporting a semiconductor wafer 1 and a cooling medium supplied to a cooling medium supply path 3a as shown in FIG. By doing so, it can be applied to the bonding agent 4 for bonding the susceptor 2 for the semiconductor manufacturing apparatus and the cooling plate 3 in the semiconductor support device including the cooling plate 3 for controlling the temperature of the semiconductor wafer 1. In the semiconductor support device shown in FIG. 1, a gas channel for supplying a gas between the semiconductor wafer 1 and the susceptor 2 for the semiconductor manufacturing apparatus to the susceptor 2 for the semiconductor manufacturing apparatus, the cooling plate 3 and the bonding agent 4. 5 and a lift pin hole 6 for inserting the lift pin and removing the semiconductor wafer 1 from the susceptor 2 for semiconductor manufacturing apparatus.

  Hereinafter, the best mode for carrying out the present invention will be described.

[Example 1]
In Example 1, first, 100 parts by mass of an organopolysiloxane containing vinyl groups at both ends of the molecular chain, R ₃ SiO _1/2 (R is 1 to 6 carbon atoms having no aliphatic unsaturated bond). Unit represented by (valent hydrocarbon group) (hereinafter referred to as M) and a unit represented by SiO _4/2 (hereinafter referred to as Q) in a molar ratio of R ₃ SiO _1/2 unit / SiO _4/2 unit. 180 parts by mass of an organopolysiloxane resin containing a ratio (M / Q ratio) of 1.1, and an organohydrogenpolysiloxane containing silicon-bonded hydrogen atoms with respect to the vinyl groups of the organopolysiloxane containing vinyl groups Aluminum oxide (fine particles) having an average particle size of 0.7 [μm] and an average particle size having an amount of SiH group in the component in an amount of 15, a platinum catalyst, and a content of 20 [vol%] 20 [μm] An addition-curable silicone pressure-sensitive adhesive prepared by dissolving a mixture of thermally conductive fillers in which aluminum oxide (coarse particles) in a weight ratio of 10:90 was dissolved in toluene was applied to a PET release film. C.] in a hot air circulating dryer for 10 minutes, and then the cured product was peeled from the PET release film to obtain a bonding agent of Example 1 having a thickness of 120 [μm]. Next, the present bonding agent is heated and pressure-bonded to aluminum (Al) square plates and aluminum nitride (AlN) square plates of various shapes at 100 [° C.] and 1.4 [MPa] for 10 minutes to obtain Example 1. A zygote was obtained.

[Example 2]
In Example 2, the joined body of Example 2 was obtained by manufacturing under the same conditions as in Example 1 except that a silane coupling primer was previously applied to the joining surface of Al and AlN.

Example 3
In Example 3, the joined body of Example 3 was obtained by manufacturing under the same conditions as in Example 1 except that the weight ratio of fine particles to coarse particles was 30:70.

Example 4
In Example 4, the joined body of Example 4 was obtained by producing under the same conditions as in Example 1 except that the weight ratio of fine particles to coarse particles was 20:80.

Example 5
In Example 5, the joined body of Example 5 was obtained by manufacturing on the same conditions as Example 1 except having set the content rate of the heat conductive filler to 33 [vol%].

Example 6
In Example 6, the joined body of Example 6 was obtained by manufacturing under the same conditions as in Example 5 except that the weight ratio of fine particles to coarse particles was 20:80.

Example 7
In Example 7, the joined body of Example 7 was obtained by manufacturing under the same conditions as in Example 6 except that a silane coupling primer was previously applied to the joining surface of Al and AlN.

Example 8
In Example 8, the joined body of Example 8 was obtained by manufacturing under the same conditions as Example 6 except that the M / Q ratio was 1.5.

Example 9
In Example 9, a joined body of Example 9 was obtained by manufacturing under the same conditions as in Example 8 except that a silane coupling primer was previously applied to the joining surface of Al and AlN.

Example 10
In Example 10, the joined body of Example 10 was obtained by manufacturing under the same conditions as Example 7 except that the M / Q ratio was 0.6.

Example 11
In Example 11, the joined body of Example 11 was obtained by manufacturing under the same conditions as Example 7 except that the average particle diameter of the coarse particles was 10 [μm].

Example 12
In Example 12, the joined body of Example 12 was obtained by manufacturing under the same conditions as in Example 7 except that the average particle diameter of the coarse particles was set to 30 [μm].

Example 13
In Example 13, the joined body of Example 13 was obtained by manufacturing on the same conditions as Example 7 except having set the content rate of the heat conductive filler to 50 [vol%].

Example 14
In Example 14, the joined body of Example 14 was obtained by manufacturing under the same conditions as Example 7 except that the material of the thermally conductive filler was aluminum nitride (AlN).

Example 15
In Example 15, the joined body of Example 15 was obtained by manufacturing under the same conditions as Example 7 except that the material of the thermally conductive filler was silicon carbide (SiC).

[Comparative Example 1]
In Comparative Example 1, an acrylic resin containing 30 [vol%] of a heat conductive filler having an average particle size of 10 [μm] is prepared, and the bonded body of Comparative Example 1 is bonded to Al and AlN using this acrylic resin. Obtained.

[Comparative Example 2]
In Comparative Example 2, a joined body of Comparative Example 2 was obtained by manufacturing under the same conditions as in Example 6 except that the M / Q ratio was 0.4.

[Comparative Example 3]
In Comparative Example 3, a joined body of Comparative Example 3 was obtained by manufacturing under the same conditions as in Example 6 except that the M / Q ratio was 1.7.

[Comparative Example 4]
In the comparative example 4, the joined body of the comparative example 4 was obtained by manufacturing on the same conditions as Example 6 except having set the content rate of the heat conductive filler to 60 [vol%].

[Comparative Example 5]
In Comparative Example 5, a joined body of Comparative Example 5 was obtained by producing under the same conditions as in Example 7 except that the weight ratio of fine particles to coarse particles was 5:95.

[Comparative Example 6]
In Comparative Example 6, a joined body of Comparative Example 6 was obtained by producing under the same conditions as in Example 7 except that the average particle diameter of the coarse particles was 40 [μm].

[Comparative Example 7]
In Comparative Example 7, a joined body of Comparative Example 7 was obtained by manufacturing under the same conditions as Comparative Example 4 except that the material of the thermally conductive filler was aluminum nitride (AlN).

[Comparative Example 8]
In Comparative Example 8, a joined body of Comparative Example 8 was obtained by manufacturing under the same conditions as Comparative Example 4 except that the material of the thermally conductive filler was silicon carbide (SiC).

[Comparative Example 9]
In Comparative Example 9, a joined body of Comparative Example 9 was obtained by manufacturing under the same conditions as in Example 7 except that the content of the heat conductive filler was set to 15 [vol%].

[Comparative Example 10]
In Comparative Example 10, a joined body of Comparative Example 10 was obtained by manufacturing under the same conditions as Comparative Example 9 except that the material of the thermally conductive filler was aluminum nitride (AlN).

[Comparative Example 11]
In Comparative Example 11, a joined body of Comparative Example 11 was obtained by manufacturing under the same conditions as Comparative Example 9 except that the material of the thermally conductive filler was silicon carbide (SiC).

[Shear peeling test]
Between the AlN square plate 11 and the Al square plate 12 having a width of 25 [mm] × length of 35 [mm] × thickness of 10 [mm], each of the above Examples 1 to 15 and Comparative Examples 1 to 8 was joined. A product obtained by cutting the agent into a size of 25 × 25 [mm] was sandwiched, and heated and pressed at 100 [° C.] and 14 [atm] to prepare a joined body. Then, using a shear peeling test apparatus as shown in FIG. 2, the shear peeling strength and shear elongation of each joined body at room temperature and 150 [° C.] were measured. The measurement results are shown in Table 1 below. In the solid joined body of φ300 mm size, the shear peel strength is 0.5 [MPa] or more at room temperature, 0.2 [MPa] or more at 150 [° C.] in order to maintain the airtightness of the joining interface, It is empirically known that the target value for shear elongation is 0.04 or more for both room temperature and 150 [° C.].

As is clear from Table 1, the bonded bodies of Examples 1 to 15 were superior in shear peel strength and shear elongation as compared to the bonded bodies of Comparative Examples 1 to 8. On the other hand, in the bonded body of Comparative Example 1, since the bonding agent was formed of an acrylic resin having low heat resistance, the deterioration of the shear peel strength accompanying the temperature increase was severe. The bonded body of Comparative Example 2 had a low shear peel strength because the bonding agent had a low M / Q ratio and low tackiness. The joined body of Comparative Example 3 had a high M / Q ratio of the joining agent and strong tackiness, but was too soft, so that the shear peel strength was low. The bonded body of Comparative Example 4 had a low adhesiveness and a low shear peel strength because the content of the heat conductive filler in the bonding agent was too high. Since the joined body of Comparative Example 5 had too few fine particles of the heat conductive filler, the adhesiveness was weak and the shear peel strength was low. Since the average particle diameter of the coarse particles of the heat conductive filler was too large, the bonded body of the comparative example had low adhesiveness and low shear peel strength. In the joined bodies of Comparative Example 7 and Comparative Example 8, the adhesiveness was weak and the shear peel strength was low because the heat conductive filler content was too large.

[Thermal degradation test of thermal conductivity]
Between each of the φ10 × t1 [mm] AlN disc and the φ10 × t2 [mm] Al disc, the bonding agents of Examples 1, 5 to 9 and Comparative Examples 1, 4, 7 to 11 are 25 × 25 [ mm] was sandwiched and heated and pressed at 100 [° C.] and 14 [atm] to prepare a joined body. And the thermal conductivity of each joined body after performing the durability test which hold | maintains in the state of 150 [degreeC] for 500 hours was measured by the laser flash method, and the thermal deterioration of thermal conductivity was measured. Then, by removing the known thermal conductivity of AlN (90 [W / mK]) and Al (160 [W / mK]) from the measured thermal conductivity of the entire bonded body, the bonding agent alone and the bonding interface The thermal conductivity of the bonding layer in consideration of thermal resistance was calculated. The measurement results are shown in Table 2 below. The target value of thermal conductivity is 0.30 [W / mK] or less.

In the joined bodies of Comparative Examples 1, 4, 7 to 11, the thermal conductivity of the bonding agent decreases after the durability test, whereas in the joined bodies of Examples 1, 5 to 9, and 11 to 15, the before and after the durability test. No decrease in the thermal conductivity of the bonding agent was observed. The reason why no decrease in the thermal conductivity of the bonding agent was observed before and after the durability test in the bonded bodies of Examples 1, 5 to 9, and 11 to 15 was as follows. Then, since the bonding agent is basically a silicone resin having heat resistance, and the M / Q ratio and the content of the heat conductive filler are appropriate, it is considered that the adhesive has sufficiently developed the adhesiveness. It is done. On the other hand, in the joined bodies of Comparative Examples 1, 4, and 7 to 11, the reason why the thermal conductivity of the joining agent decreased after the durability test is that the joining agent of Comparative Example 1 is an acrylic resin having low heat resistance. In the joined body of Comparative Example 2, since the M / Q ratio of the bonding agent is low and the tackiness is weak, in the joined body of Comparative Example 3, the M / Q ratio of the joining agent is high and the tackiness is weak. In the joined bodies of Nos. 7 and 8, since the content of the heat conductive filler is large, the adhesiveness of the bonding agent is weak. Therefore, in the joined bodies of Comparative Examples 9 to 11, the content of the thermally conductive filler is too small. .

[Thermal cycle test]
100, sandwiching the bonding agents of Examples 1, 5 to 9, 13 to 15 and Comparative Examples 1 to 4, which are representative examples of an AlN semiconductor susceptor for semiconductor manufacturing equipment and an Al cooling plate extracted from a shear peeling test. After heat and pressure bonding at [° C.] and 14 [atm], after bonding and after a durability test (30 cycles of a process of raising the temperature from 30 [° C.] to 150 [° C.] and then lowering the temperature to 30 [° C.]) The flatness and gas leakage at the bonding interface were evaluated. The dimensions of the susceptor for semiconductor manufacturing apparatus and the cooling plate were set to φ300 × t10 [mm] and φ300 × t30 [mm], respectively. Further, the gas leak was evaluated by closing the gas channel of the susceptor for the semiconductor manufacturing apparatus, blowing He to the joint while evacuating the gas channel on the cooling plate with the He leak detector, and measuring the amount of He leak. . The results are shown in Table 3 below. When the susceptor for a semiconductor manufacturing apparatus and the cooling plate were joined with the joining agents of Examples 1, 5 to 9, and 13 to 15, no gas leak was observed after joining and after the durability test, whereas Comparative Examples 1 to In the case of bonding with the bonding agent of No. 4, gas leak was observed after the endurance test of 30 cycles. The flatness was 30 [um] or less in each of Examples 1, 5 to 9, 13 to 15 and Comparative Examples 1 to 4, and was a level with no problem in actual use.

  As mentioned above, although the embodiment to which the invention made by the present inventors was applied has been described, the present invention is not limited by the description and the drawings that form part of the disclosure of the present invention according to this embodiment. That is, it should be added that other embodiments, examples, operation techniques, and the like made by those skilled in the art based on the above embodiments are all included in the scope of the present invention.

It is a schematic diagram which shows the structure of the semiconductor support apparatus used as embodiment of this invention. It is a schematic diagram which shows the structure of the shear peeling test apparatus used as embodiment of this invention.

Explanation of symbols

1: Semiconductor wafer 2: Susceptor for semiconductor manufacturing device 3: Cooling plate 3a: Cooling medium supply path 4: Bonding agent 5: Gas channel 6: Lift pin hole 11: Square plate made of AlN 12: Square plate made of Al 13a, 13b: Shear Test jig

Claims (5)

A semiconductor manufacturing device susceptor for supporting a semiconductor wafer ;
A cooling plate,
A bonding agent for bonding the susceptor for the semiconductor manufacturing apparatus and the cooling plate;
The bonding agent is formed by a cured sheet made of an addition-curable silicone adhesive,
The addition-curable silicone adhesive is
An organopolysiloxane containing two or more vinyl groups per molecule;
A unit represented by R ₃ SiO _1/2 (where R is a monovalent hydrocarbon group having 1 to 6 carbon atoms not having an aliphatic unsaturated bond) and a unit represented by SiO _4/2 (Hereinafter referred to as Q) in a ratio in which the molar ratio of R ₃ SiO _1/2 unit / SiO _4/2 unit (M / Q ratio) is in the range of 0.6 to 1.5 Resin,
An organohydrogenpolysiloxane containing silicon-bonded hydrogen atoms;
Platinum catalyst,
Contains a thermally conductive filler having a 20 [vo l%] or more 50 [vol%] following content,
A semiconductor support device comprising a silane coupling primer layer at a bonding interface between the bonding agent, the susceptor for the semiconductor manufacturing apparatus, and the cooling plate .   The semiconductor support device according to claim 1, wherein the semiconductor device susceptor and the cooling plate have a diameter of 300 mm or more.   3. The semiconductor support device according to claim 1, wherein the layer of the addition-curable silicone pressure-sensitive adhesive has a thickness of 50 to 300 [μm]. 4. The semiconductor support device according to claim 1 , wherein the thermally conductive filler is formed of any one of aluminum oxide, aluminum nitride, and silicon carbide. 5. A semiconductor support device. Of claims 1 to 4, a semiconductor support device according to any one, the susceptor for semiconductor manufacturing apparatus, is formed of aluminum nitride, aluminum oxide, boron nitride, by any of yttria The cooling plate is formed of any one of an aluminum alloy and brass.

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