TW201503227A - 基板液體處理裝置及基板液體處理方法 - Google Patents

基板液體處理裝置及基板液體處理方法 Download PDF

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Publication number
TW201503227A
TW201503227A TW102144808A TW102144808A TW201503227A TW 201503227 A TW201503227 A TW 201503227A TW 102144808 A TW102144808 A TW 102144808A TW 102144808 A TW102144808 A TW 102144808A TW 201503227 A TW201503227 A TW 201503227A
Authority
TW
Taiwan
Prior art keywords
substrate
back surface
wafer
nozzle
gas
Prior art date
Application number
TW102144808A
Other languages
English (en)
Chinese (zh)
Other versions
TWI560743B (https=
Inventor
福田昌弘
久保明広
山本太郎
矢田健二
大河內厚
Original Assignee
東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京威力科創股份有限公司 filed Critical 東京威力科創股份有限公司
Publication of TW201503227A publication Critical patent/TW201503227A/zh
Application granted granted Critical
Publication of TWI560743B publication Critical patent/TWI560743B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • B08B5/023—Cleaning travelling work
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW102144808A 2012-12-13 2013-12-06 基板液體處理裝置及基板液體處理方法 TW201503227A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012271880A JP5973901B2 (ja) 2012-12-13 2012-12-13 基板液処理装置及び基板液処理方法

Publications (2)

Publication Number Publication Date
TW201503227A true TW201503227A (zh) 2015-01-16
TWI560743B TWI560743B (https=) 2016-12-01

Family

ID=50934443

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102144808A TW201503227A (zh) 2012-12-13 2013-12-06 基板液體處理裝置及基板液體處理方法

Country Status (6)

Country Link
US (1) US9570327B2 (https=)
JP (1) JP5973901B2 (https=)
KR (1) KR101892796B1 (https=)
CN (1) CN104854681B (https=)
TW (1) TW201503227A (https=)
WO (1) WO2014092160A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI747062B (zh) * 2018-11-07 2021-11-21 日商斯庫林集團股份有限公司 處理杯單元及基板處理裝置

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102000017B1 (ko) * 2017-07-21 2019-07-18 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102162188B1 (ko) * 2018-07-18 2020-10-07 세메스 주식회사 기판 처리 장치 및 방법
CN110459493B (zh) * 2019-08-21 2022-03-22 北京北方华创微电子装备有限公司 抽真空腔室及抽真空方法
CN112750719B (zh) * 2019-10-31 2023-12-12 上海微电子装备（集团）股份有限公司 一种硅片表面清洁装置和方法
KR102945628B1 (ko) * 2020-02-11 2026-03-27 삼성전자주식회사 웨이퍼 검사 장치 및 이를 이용한 반도체 소자 제조 방법
JP7797882B2 (ja) * 2022-01-11 2026-01-14 東京エレクトロン株式会社 塗布膜形成方法、塗布膜形成装置及びプログラム
US12420313B2 (en) * 2022-08-09 2025-09-23 Taiwan Semiconductor Manufacturing Company, Ltd. Onsite cleaning system and method
CN115547812A (zh) * 2022-09-26 2022-12-30 华虹半导体(无锡)有限公司 防止接触孔内粘附层沉积前预清洗时形成水痕的方法
EP4404248A3 (en) * 2022-12-23 2024-08-21 SCREEN Holdings Co., Ltd. Substrate processing device and substrate processing method
CN119334119A (zh) * 2023-07-20 2025-01-21 成都辰显光电有限公司 风干装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3171965B2 (ja) * 1992-10-19 2001-06-04 島田理化工業株式会社 スピン洗浄乾燥装置
JPH10172944A (ja) 1996-12-10 1998-06-26 Nittetsu Semiconductor Kk 半導体装置のフォトリソグラフィー工程におけるウエーハ裏面洗浄方法
JP2002359220A (ja) * 2001-05-31 2002-12-13 Tokyo Electron Ltd 基板の処理装置
JP4040270B2 (ja) * 2001-06-25 2008-01-30 東京エレクトロン株式会社 基板の処理装置
JP4734063B2 (ja) * 2005-08-30 2011-07-27 東京エレクトロン株式会社 基板洗浄装置及び基板洗浄方法。
JP4607755B2 (ja) * 2005-12-19 2011-01-05 東京エレクトロン株式会社 基板洗浄方法、基板洗浄装置、制御プログラム、およびコンピュータ読取可能な記憶媒体
JP4983565B2 (ja) * 2006-12-20 2012-07-25 東京エレクトロン株式会社 基板洗浄装置、基板洗浄方法及び記憶媒体
JP5016351B2 (ja) * 2007-03-29 2012-09-05 東京エレクトロン株式会社 基板処理システム及び基板洗浄装置
JP5467583B2 (ja) * 2011-02-17 2014-04-09 東京エレクトロン株式会社 基板洗浄装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI747062B (zh) * 2018-11-07 2021-11-21 日商斯庫林集團股份有限公司 處理杯單元及基板處理裝置

Also Published As

Publication number Publication date
US20150318193A1 (en) 2015-11-05
CN104854681A (zh) 2015-08-19
KR20150093699A (ko) 2015-08-18
KR101892796B1 (ko) 2018-08-28
CN104854681B (zh) 2017-04-19
US9570327B2 (en) 2017-02-14
TWI560743B (https=) 2016-12-01
JP5973901B2 (ja) 2016-08-23
WO2014092160A1 (ja) 2014-06-19
JP2014120489A (ja) 2014-06-30

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