CN104854681B - 基板液体处理装置和基板液体处理方法 - Google Patents

基板液体处理装置和基板液体处理方法 Download PDF

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Publication number
CN104854681B
CN104854681B CN201380065321.3A CN201380065321A CN104854681B CN 104854681 B CN104854681 B CN 104854681B CN 201380065321 A CN201380065321 A CN 201380065321A CN 104854681 B CN104854681 B CN 104854681B
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China
Prior art keywords
substrate
purge
slit
back surface
peripheral
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CN201380065321.3A
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English (en)
Chinese (zh)
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CN104854681A (zh
Inventor
福田昌弘
久保明广
山本太郎
矢田健二
大河内厚
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0418Apparatus for fluid treatment for etching
    • H10P72/0422Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0406Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00Cleaning by methods involving the use of air flow or gas flow
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02Cleaning by the force of jets, e.g. blowing-out cavities
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02Cleaning by the force of jets, e.g. blowing-out cavities
    • B08B5/023Cleaning travelling work
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0406Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0406Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201380065321.3A 2012-12-13 2013-12-12 基板液体处理装置和基板液体处理方法 Active CN104854681B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012271880A JP5973901B2 (ja) 2012-12-13 2012-12-13 基板液処理装置及び基板液処理方法
JP2012-271880 2012-12-13
PCT/JP2013/083367 WO2014092160A1 (ja) 2012-12-13 2013-12-12 基板液処理装置及び基板液処理方法

Publications (2)

Publication Number Publication Date
CN104854681A CN104854681A (zh) 2015-08-19
CN104854681B true CN104854681B (zh) 2017-04-19

Family

ID=50934443

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380065321.3A Active CN104854681B (zh) 2012-12-13 2013-12-12 基板液体处理装置和基板液体处理方法

Country Status (6)

Country Link
US (1) US9570327B2 (https=)
JP (1) JP5973901B2 (https=)
KR (1) KR101892796B1 (https=)
CN (1) CN104854681B (https=)
TW (1) TW201503227A (https=)
WO (1) WO2014092160A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102000017B1 (ko) * 2017-07-21 2019-07-18 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102162188B1 (ko) * 2018-07-18 2020-10-07 세메스 주식회사 기판 처리 장치 및 방법
JP2020077755A (ja) * 2018-11-07 2020-05-21 株式会社Screenホールディングス 処理カップユニットおよび基板処理装置
CN110459493B (zh) * 2019-08-21 2022-03-22 北京北方华创微电子装备有限公司 抽真空腔室及抽真空方法
CN112750719B (zh) * 2019-10-31 2023-12-12 上海微电子装备(集团)股份有限公司 一种硅片表面清洁装置和方法
KR102945628B1 (ko) * 2020-02-11 2026-03-27 삼성전자주식회사 웨이퍼 검사 장치 및 이를 이용한 반도체 소자 제조 방법
JP7797882B2 (ja) * 2022-01-11 2026-01-14 東京エレクトロン株式会社 塗布膜形成方法、塗布膜形成装置及びプログラム
US12420313B2 (en) * 2022-08-09 2025-09-23 Taiwan Semiconductor Manufacturing Company, Ltd. Onsite cleaning system and method
CN115547812A (zh) * 2022-09-26 2022-12-30 华虹半导体(无锡)有限公司 防止接触孔内粘附层沉积前预清洗时形成水痕的方法
EP4404248A3 (en) * 2022-12-23 2024-08-21 SCREEN Holdings Co., Ltd. Substrate processing device and substrate processing method
CN119334119A (zh) * 2023-07-20 2025-01-21 成都辰显光电有限公司 风干装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002359220A (ja) * 2001-05-31 2002-12-13 Tokyo Electron Ltd 基板の処理装置
CN101207007A (zh) * 2006-12-20 2008-06-25 东京毅力科创株式会社 基板清洗装置、基板清洗方法及存储介质
CN101276739A (zh) * 2007-03-29 2008-10-01 东京毅力科创株式会社 基板处理系统和基板清洗装置
JP2012169572A (ja) * 2011-02-17 2012-09-06 Tokyo Electron Ltd 基板洗浄装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3171965B2 (ja) * 1992-10-19 2001-06-04 島田理化工業株式会社 スピン洗浄乾燥装置
JPH10172944A (ja) 1996-12-10 1998-06-26 Nittetsu Semiconductor Kk 半導体装置のフォトリソグラフィー工程におけるウエーハ裏面洗浄方法
JP4040270B2 (ja) * 2001-06-25 2008-01-30 東京エレクトロン株式会社 基板の処理装置
JP4734063B2 (ja) * 2005-08-30 2011-07-27 東京エレクトロン株式会社 基板洗浄装置及び基板洗浄方法。
JP4607755B2 (ja) * 2005-12-19 2011-01-05 東京エレクトロン株式会社 基板洗浄方法、基板洗浄装置、制御プログラム、およびコンピュータ読取可能な記憶媒体

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002359220A (ja) * 2001-05-31 2002-12-13 Tokyo Electron Ltd 基板の処理装置
CN101207007A (zh) * 2006-12-20 2008-06-25 东京毅力科创株式会社 基板清洗装置、基板清洗方法及存储介质
CN101276739A (zh) * 2007-03-29 2008-10-01 东京毅力科创株式会社 基板处理系统和基板清洗装置
JP2012169572A (ja) * 2011-02-17 2012-09-06 Tokyo Electron Ltd 基板洗浄装置

Also Published As

Publication number Publication date
US20150318193A1 (en) 2015-11-05
CN104854681A (zh) 2015-08-19
TW201503227A (zh) 2015-01-16
KR20150093699A (ko) 2015-08-18
KR101892796B1 (ko) 2018-08-28
US9570327B2 (en) 2017-02-14
TWI560743B (https=) 2016-12-01
JP5973901B2 (ja) 2016-08-23
WO2014092160A1 (ja) 2014-06-19
JP2014120489A (ja) 2014-06-30

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