TW201443256A - 熱敏電阻用金屬氮化物材料及其製造方法以及薄膜型熱敏電阻感測器 - Google Patents

熱敏電阻用金屬氮化物材料及其製造方法以及薄膜型熱敏電阻感測器 Download PDF

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Publication number
TW201443256A
TW201443256A TW102145124A TW102145124A TW201443256A TW 201443256 A TW201443256 A TW 201443256A TW 102145124 A TW102145124 A TW 102145124A TW 102145124 A TW102145124 A TW 102145124A TW 201443256 A TW201443256 A TW 201443256A
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TW
Taiwan
Prior art keywords
film
thermistor
metal nitride
nitride material
type
Prior art date
Application number
TW102145124A
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English (en)
Chinese (zh)
Inventor
Toshiaki Fujita
Hiroshi Tanaka
Noriaki Nagatomo
Original Assignee
Mitsubishi Materials Corp
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Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of TW201443256A publication Critical patent/TW201443256A/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/008—Thermistors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Thermistors And Varistors (AREA)
  • Physical Vapour Deposition (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
TW102145124A 2012-12-21 2013-12-09 熱敏電阻用金屬氮化物材料及其製造方法以及薄膜型熱敏電阻感測器 TW201443256A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012279146A JP6015423B2 (ja) 2012-12-21 2012-12-21 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ

Publications (1)

Publication Number Publication Date
TW201443256A true TW201443256A (zh) 2014-11-16

Family

ID=50978226

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102145124A TW201443256A (zh) 2012-12-21 2013-12-09 熱敏電阻用金屬氮化物材料及其製造方法以及薄膜型熱敏電阻感測器

Country Status (7)

Country Link
US (1) US9905342B2 (ja)
EP (1) EP2937874A1 (ja)
JP (1) JP6015423B2 (ja)
KR (1) KR20150097537A (ja)
CN (1) CN104838453B (ja)
TW (1) TW201443256A (ja)
WO (1) WO2014097891A1 (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6680995B2 (ja) * 2015-03-26 2020-04-15 三菱マテリアル株式会社 窒化物熱電変換材料及びその製造方法並びに熱電変換素子
DE102017108582A1 (de) * 2017-04-21 2018-10-25 Epcos Ag Schichtwiderstand und Dünnfilmsensor
DE102017113401A1 (de) * 2017-06-19 2018-12-20 Epcos Ag Schichtwiderstand und Dünnfilmsensor
WO2019131570A1 (ja) 2017-12-25 2019-07-04 三菱マテリアル株式会社 サーミスタ及びその製造方法並びにサーミスタセンサ
JP7234573B2 (ja) 2017-12-25 2023-03-08 三菱マテリアル株式会社 サーミスタ及びその製造方法並びにサーミスタセンサ
JP2019129185A (ja) 2018-01-22 2019-08-01 三菱マテリアル株式会社 サーミスタ及びその製造方法並びにサーミスタセンサ
CN111826621A (zh) * 2019-04-17 2020-10-27 中国兵器工业第五九研究所 玻璃模压模具涂层及其制备方法和应用
JP2022157019A (ja) * 2021-03-31 2022-10-14 Tdk株式会社 歪抵抗膜および圧力センサ
CN114381690B (zh) * 2022-01-11 2024-03-01 厦门钨业股份有限公司 一种CrAlMeN-CrAlN纳米多层结构涂层及其制备方法与用途

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JPH0590011A (ja) 1991-09-26 1993-04-09 Anritsu Corp 感温抵抗体及びその製造方法
JPH06158272A (ja) 1992-11-17 1994-06-07 Ulvac Japan Ltd 抵抗膜および抵抗膜の製造方法
WO1996038278A1 (en) * 1995-06-02 1996-12-05 A.H. Casting Services Limited Ceramic material with high density and thermal shock resistance, and method of preparation
JP3642449B2 (ja) 1997-03-21 2005-04-27 財団法人電気磁気材料研究所 Ｃｒ−Ｎ基歪抵抗膜およびその製造法ならびに歪センサ
US20040224459A1 (en) * 1999-07-07 2004-11-11 Matsushita Electric Industrial Co., Ltd. Layered structure, method for manufacturing the same, and semiconductor element
US6989574B2 (en) * 2000-08-24 2006-01-24 Heetronix High temperature circuit structures with thin film layer
JP2003226573A (ja) 2002-02-01 2003-08-12 Mitsubishi Materials Corp 複合磁器材料およびｌｃ複合部品
JP3862080B2 (ja) * 2002-11-01 2006-12-27 防衛庁技術研究本部長 熱型赤外線検出器の製造方法
DE60312110T2 (de) * 2002-11-19 2007-10-11 Hitachi Tool Engineering Ltd. Hartstoffschicht und damit beschichtetes Werkzeug
JP4436064B2 (ja) * 2003-04-16 2010-03-24 大阪府 サーミスタ用材料及びその製造方法
JP2006324520A (ja) 2005-05-19 2006-11-30 Mitsubishi Materials Corp サーミスタ薄膜及びその製造方法
JP2006219739A (ja) * 2005-02-14 2006-08-24 Hitachi Cable Ltd 金属酸化膜形成方法
US20100104495A1 (en) * 2006-10-16 2010-04-29 Mitsubishi Chemical Corporation Method for producing nitride semiconductor, crystal growth rate increasing agent, single crystal nitride, wafer and device
JP5160583B2 (ja) * 2009-06-16 2013-03-13 日本電波工業株式会社 感知装置及び感知方法
JP5703842B2 (ja) 2011-02-28 2015-04-22 三菱マテリアル株式会社 温度センサ付き非接触給電装置
CN102522172A (zh) * 2011-12-31 2012-06-27 上海长园维安电子线路保护有限公司 电阻正温度效应导电复合材料及热敏电阻元件
JP5477670B2 (ja) * 2012-02-28 2014-04-23 三菱マテリアル株式会社 サーミスタ用金属窒化物材料及びその製造方法並びにフィルム型サーミスタセンサ
CN103717332B (zh) * 2012-06-29 2016-02-24 住友电工硬质合金株式会社 表面被覆切削工具

Also Published As

Publication number Publication date
US20150325345A1 (en) 2015-11-12
JP6015423B2 (ja) 2016-10-26
KR20150097537A (ko) 2015-08-26
WO2014097891A1 (ja) 2014-06-26
US9905342B2 (en) 2018-02-27
JP2014123646A (ja) 2014-07-03
CN104838453A (zh) 2015-08-12
CN104838453B (zh) 2017-07-04
EP2937874A1 (en) 2015-10-28

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