TW201442309A - Ｐｚｔ系強介電體薄膜及其形成方法 - Google Patents

Ｐｚｔ系強介電體薄膜及其形成方法 Download PDF

Info

Publication number
TW201442309A
TW201442309A TW103105473A TW103105473A TW201442309A TW 201442309 A TW201442309 A TW 201442309A TW 103105473 A TW103105473 A TW 103105473A TW 103105473 A TW103105473 A TW 103105473A TW 201442309 A TW201442309 A TW 201442309A
Authority
TW
Taiwan
Prior art keywords
pzt
film
thin film
ferroelectric thin
based ferroelectric
Prior art date
Application number
TW103105473A
Other languages
English (en)
Chinese (zh)
Inventor
土井利浩
桜井英章
曽山信幸
野口毅
Original Assignee
三菱綜合材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三菱綜合材料股份有限公司 filed Critical 三菱綜合材料股份有限公司
Publication of TW201442309A publication Critical patent/TW201442309A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/36—Successively applying liquids or other fluent materials, e.g. without intermediate treatment
    • B05D1/38—Successively applying liquids or other fluent materials, e.g. without intermediate treatment with intermediate treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
    • B05D3/0254—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
    • H10N30/078—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H10N30/8554—Lead-zirconium titanate [PZT] based
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6544—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials to change the morphology of the insulating materials, e.g. transformation of an amorphous layer into a crystalline layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/69398—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides the material having a perovskite structure, e.g. BaTiO3

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
  • Ceramic Capacitors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Crystallography & Structural Chemistry (AREA)
TW103105473A 2013-03-29 2014-02-19 Ｐｚｔ系強介電體薄膜及其形成方法 TW201442309A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013073150 2013-03-29

Publications (1)

Publication Number Publication Date
TW201442309A true TW201442309A (zh) 2014-11-01

Family

ID=50112827

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103105473A TW201442309A (zh) 2013-03-29 2014-02-19 Ｐｚｔ系強介電體薄膜及其形成方法

Country Status (7)

Country Link
US (1) US9251955B2 (OSRAM)
EP (1) EP2784804A1 (OSRAM)
JP (1) JP2015038956A (OSRAM)
KR (1) KR20140118724A (OSRAM)
CN (1) CN104072133A (OSRAM)
IN (1) IN2014DE00468A (OSRAM)
TW (1) TW201442309A (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102691313B1 (ko) * 2016-09-06 2024-08-05 삼성전기주식회사 박막 커패시터
KR102482896B1 (ko) 2017-12-28 2022-12-30 삼성전자주식회사 이종 휘발성 메모리 칩들을 포함하는 메모리 장치 및 이를 포함하는 전자 장치
US11818955B2 (en) 2021-08-26 2023-11-14 City University Of Hong Kong Method for forming piezoelectric films on surfaces of arbitrary morphologies

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3243307B2 (ja) 1992-11-06 2002-01-07 ティーディーケイ株式会社 非線形光学素子およびその製造方法
US6126743A (en) * 1993-03-12 2000-10-03 Sumitomo Chemical Company, Limited Process for producing dielectrics and fine single crystal powders and thin film capacitor
JPH0799252A (ja) * 1993-06-22 1995-04-11 Sharp Corp 強誘電体膜の製造方法及びそれを用いた半導体装置
US6066581A (en) * 1995-07-27 2000-05-23 Nortel Networks Corporation Sol-gel precursor and method for formation of ferroelectric materials for integrated circuits
JPH10270772A (ja) 1997-03-28 1998-10-09 Citizen Watch Co Ltd 強誘電体薄膜素子
JPH11307834A (ja) 1998-04-24 1999-11-05 Seiko Epson Corp 圧電体素子、インクジェット式記録ヘッドおよびそれらの製造方法
US6809052B2 (en) * 2002-01-15 2004-10-26 Tdk Corporation Dielectric ceramic composition and electronic device
CN101147216B (zh) * 2005-03-25 2010-06-16 京瓷株式会社 层叠陶瓷电容器及其制造方法
TW200712243A (en) * 2005-09-13 2007-04-01 Energenius Inc Ferroelectric thin film composites with improved top contact adhesion and devices containing the same
JP4737027B2 (ja) 2006-10-13 2011-07-27 セイコーエプソン株式会社 圧電体素子の製造方法、及びインクジェット式記録ヘッドの製造方法
CN100432018C (zh) * 2007-05-23 2008-11-12 哈尔滨工业大学 一种高度(111)取向的锆钛酸铅薄膜的制备方法
JP5414433B2 (ja) * 2008-09-30 2014-02-12 キヤノン株式会社 強誘電セラミック材料
JP2011238708A (ja) 2010-05-07 2011-11-24 Seiko Epson Corp 液体噴射ヘッドの製造方法、液体噴射装置、及び圧電素子の製造方法
JP5521957B2 (ja) 2010-05-24 2014-06-18 三菱マテリアル株式会社 強誘電体薄膜及び該強誘電体薄膜を用いた薄膜キャパシタ
US8889472B2 (en) * 2011-04-13 2014-11-18 Empire Technology Development Llc Dielectric nanocomposites and methods of making the same
WO2012165110A1 (ja) 2011-05-31 2012-12-06 コニカミノルタホールディングス株式会社 強誘電体膜およびそれを備えた圧電素子

Also Published As

Publication number Publication date
KR20140118724A (ko) 2014-10-08
US20140293505A1 (en) 2014-10-02
JP2015038956A (ja) 2015-02-26
CN104072133A (zh) 2014-10-01
EP2784804A1 (en) 2014-10-01
IN2014DE00468A (OSRAM) 2015-06-19
US9251955B2 (en) 2016-02-02

Similar Documents

Publication Publication Date Title
KR102330630B1 (ko) Mn 및 Nb 도프의 PZT 계 압전체막 형성용 조성물
CN103130504A (zh) 铁电薄膜形成用组合物、铁电薄膜及其形成法和复合电子部件
CN104072135B (zh) PNbZT铁电薄膜的制造方法和复合电子部件
TWI650774B (zh) 摻雜Ｍｎ之ＰＺＴ系壓電體膜形成用組成物及摻雜Ｍｎ之ＰＺＴ系壓電體膜
KR102334850B1 (ko) Mn 및 Nb 도프의 PZT 계 압전체막
KR102019522B1 (ko) Pzt계 강유전체 박막 형성용 조성물 및 그 제조 방법 그리고 그 조성물을 사용한 pzt계 강유전체 박막의 형성 방법
KR102111825B1 (ko) 강유전체막이 부착된 실리콘 기판
TWI601705B (zh) Ｐｚｔ系強介電體薄膜形成用組成物及其製造方法以及使用該組成物之ｐｚｔ系強介電體薄膜的形成方法
US9251955B2 (en) PZT-based ferroelectric thin film and method of forming the same
KR102176808B1 (ko) Ce 도프의 PZT 계 압전체막 형성용 조성물
KR102385773B1 (ko) Ce 도프의 PZT 계 압전체막