JP2015038956A - Ｐｚｔ系強誘電体薄膜及びその形成方法 - Google Patents

Ｐｚｔ系強誘電体薄膜及びその形成方法 Download PDF

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Publication number
JP2015038956A
JP2015038956A JP2014050215A JP2014050215A JP2015038956A JP 2015038956 A JP2015038956 A JP 2015038956A JP 2014050215 A JP2014050215 A JP 2014050215A JP 2014050215 A JP2014050215 A JP 2014050215A JP 2015038956 A JP2015038956 A JP 2015038956A
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Japan
Prior art keywords
thin film
pzt
ferroelectric thin
composition
based ferroelectric
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Pending
Application number
JP2014050215A
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English (en)
Japanese (ja)
Inventor
土井　利浩
Toshihiro Doi
利浩 土井
桜井　英章
Hideaki Sakurai
英章 桜井
曽山　信幸
Nobuyuki Soyama
信幸 曽山
野口　毅
Takeshi Noguchi
毅 野口
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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Priority to JP2014050215A priority Critical patent/JP2015038956A/ja
Publication of JP2015038956A publication Critical patent/JP2015038956A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/36—Successively applying liquids or other fluent materials, e.g. without intermediate treatment
    • B05D1/38—Successively applying liquids or other fluent materials, e.g. without intermediate treatment with intermediate treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
    • B05D3/0254—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
    • H10N30/078—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H10N30/8554—Lead-zirconium titanate [PZT] based
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6544—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials to change the morphology of the insulating materials, e.g. transformation of an amorphous layer into a crystalline layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/69398—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides the material having a perovskite structure, e.g. BaTiO3

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
  • Ceramic Capacitors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP2014050215A 2013-03-29 2014-03-13 Ｐｚｔ系強誘電体薄膜及びその形成方法 Pending JP2015038956A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014050215A JP2015038956A (ja) 2013-03-29 2014-03-13 Ｐｚｔ系強誘電体薄膜及びその形成方法

Applications Claiming Priority (3)

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JP2013073150 2013-03-29
JP2013073150 2013-03-29
JP2014050215A JP2015038956A (ja) 2013-03-29 2014-03-13 Ｐｚｔ系強誘電体薄膜及びその形成方法

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JP2015038956A true JP2015038956A (ja) 2015-02-26

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JP2014050215A Pending JP2015038956A (ja) 2013-03-29 2014-03-13 Ｐｚｔ系強誘電体薄膜及びその形成方法

Country Status (7)

Country Link
US (1) US9251955B2 (OSRAM)
EP (1) EP2784804A1 (OSRAM)
JP (1) JP2015038956A (OSRAM)
KR (1) KR20140118724A (OSRAM)
CN (1) CN104072133A (OSRAM)
IN (1) IN2014DE00468A (OSRAM)
TW (1) TW201442309A (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102691313B1 (ko) * 2016-09-06 2024-08-05 삼성전기주식회사 박막 커패시터
KR102482896B1 (ko) 2017-12-28 2022-12-30 삼성전자주식회사 이종 휘발성 메모리 칩들을 포함하는 메모리 장치 및 이를 포함하는 전자 장치
US11818955B2 (en) 2021-08-26 2023-11-14 City University Of Hong Kong Method for forming piezoelectric films on surfaces of arbitrary morphologies

Citations (6)

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Publication number Priority date Publication date Assignee Title
JPH06148704A (ja) * 1992-11-06 1994-05-27 Tdk Corp 非線形光学素子およびその製造方法
JPH10270772A (ja) * 1997-03-28 1998-10-09 Citizen Watch Co Ltd 強誘電体薄膜素子
JPH11307834A (ja) * 1998-04-24 1999-11-05 Seiko Epson Corp 圧電体素子、インクジェット式記録ヘッドおよびそれらの製造方法
JP2007019554A (ja) * 2006-10-13 2007-01-25 Seiko Epson Corp 圧電体素子の製造方法、及びインクジェット式記録ヘッドの製造方法
JP2011238708A (ja) * 2010-05-07 2011-11-24 Seiko Epson Corp 液体噴射ヘッドの製造方法、液体噴射装置、及び圧電素子の製造方法
WO2012165110A1 (ja) * 2011-05-31 2012-12-06 コニカミノルタホールディングス株式会社 強誘電体膜およびそれを備えた圧電素子

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US6126743A (en) * 1993-03-12 2000-10-03 Sumitomo Chemical Company, Limited Process for producing dielectrics and fine single crystal powders and thin film capacitor
JPH0799252A (ja) * 1993-06-22 1995-04-11 Sharp Corp 強誘電体膜の製造方法及びそれを用いた半導体装置
US6066581A (en) * 1995-07-27 2000-05-23 Nortel Networks Corporation Sol-gel precursor and method for formation of ferroelectric materials for integrated circuits
US6809052B2 (en) * 2002-01-15 2004-10-26 Tdk Corporation Dielectric ceramic composition and electronic device
CN101147216B (zh) * 2005-03-25 2010-06-16 京瓷株式会社 层叠陶瓷电容器及其制造方法
TW200712243A (en) * 2005-09-13 2007-04-01 Energenius Inc Ferroelectric thin film composites with improved top contact adhesion and devices containing the same
CN100432018C (zh) * 2007-05-23 2008-11-12 哈尔滨工业大学 一种高度(111)取向的锆钛酸铅薄膜的制备方法
JP5414433B2 (ja) * 2008-09-30 2014-02-12 キヤノン株式会社 強誘電セラミック材料
JP5521957B2 (ja) 2010-05-24 2014-06-18 三菱マテリアル株式会社 強誘電体薄膜及び該強誘電体薄膜を用いた薄膜キャパシタ
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Patent Citations (6)

* Cited by examiner, † Cited by third party
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JPH06148704A (ja) * 1992-11-06 1994-05-27 Tdk Corp 非線形光学素子およびその製造方法
JPH10270772A (ja) * 1997-03-28 1998-10-09 Citizen Watch Co Ltd 強誘電体薄膜素子
JPH11307834A (ja) * 1998-04-24 1999-11-05 Seiko Epson Corp 圧電体素子、インクジェット式記録ヘッドおよびそれらの製造方法
JP2007019554A (ja) * 2006-10-13 2007-01-25 Seiko Epson Corp 圧電体素子の製造方法、及びインクジェット式記録ヘッドの製造方法
JP2011238708A (ja) * 2010-05-07 2011-11-24 Seiko Epson Corp 液体噴射ヘッドの製造方法、液体噴射装置、及び圧電素子の製造方法
WO2012165110A1 (ja) * 2011-05-31 2012-12-06 コニカミノルタホールディングス株式会社 強誘電体膜およびそれを備えた圧電素子

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CSNC200758110316; 青木克裕、外３名: 'Ｓｏｌ-Ｇｅｌ法により形成した膜厚１２５ｎｍのＰＺＴ薄膜のＰ-Ｅ特性' 応用物理学関係連合講演会講演予稿集１９９４春２ , 19940328, ｐ．４５７（３０ｐ-ＭＥ-５）, （社）応用物理学会 *
JPN6014018904; 青木克裕、外３名: 'Ｓｏｌ-Ｇｅｌ法により形成した膜厚１２５ｎｍのＰＺＴ薄膜のＰ-Ｅ特性' 応用物理学関係連合講演会講演予稿集１９９４春２ , 19940328, ｐ．４５７（３０ｐ-ＭＥ-５）, （社）応用物理学会 *

Also Published As

Publication number Publication date
KR20140118724A (ko) 2014-10-08
US20140293505A1 (en) 2014-10-02
CN104072133A (zh) 2014-10-01
TW201442309A (zh) 2014-11-01
EP2784804A1 (en) 2014-10-01
IN2014DE00468A (OSRAM) 2015-06-19
US9251955B2 (en) 2016-02-02

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