TW201439269A - Adhesive film, dicing-sheet-integrated adhesive film, back-grind-tape-integrated adhesive film, back-grind-tape and dicing-sheet integrated adhesive film, laminate and cured article thereof - Google Patents

Adhesive film, dicing-sheet-integrated adhesive film, back-grind-tape-integrated adhesive film, back-grind-tape and dicing-sheet integrated adhesive film, laminate and cured article thereof Download PDF

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Publication number
TW201439269A
TW201439269A TW103107944A TW103107944A TW201439269A TW 201439269 A TW201439269 A TW 201439269A TW 103107944 A TW103107944 A TW 103107944A TW 103107944 A TW103107944 A TW 103107944A TW 201439269 A TW201439269 A TW 201439269A
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Taiwan
Prior art keywords
film
terminal
adhesive film
resin
less
Prior art date
Application number
TW103107944A
Other languages
Chinese (zh)
Other versions
TWI583766B (en
Inventor
Kenzo Maejima
Original Assignee
Sumitomo Bakelite Co
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Publication date
Application filed by Sumitomo Bakelite Co filed Critical Sumitomo Bakelite Co
Publication of TW201439269A publication Critical patent/TW201439269A/en
Application granted granted Critical
Publication of TWI583766B publication Critical patent/TWI583766B/en

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62—Alcohols or phenols
    • C08G59/621—Phenols
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector

Abstract

The present invention provides an adhesive film (10) which achieves both sufficient transparency and reliability on a solder bonding portion. The adhesive film electrically connects first terminals (21) and second terminals (31) by interposing itself between an electronic component (20) having the first terminals (21) and a circuit component (30) having the second terminals (31) which corresponds to the first terminals (21), wherein a width of the first terminals (21) is 3 to 100 μ m; the first terminals (21) has a low-melting-point metal composition covering at least a portion of the surface of the terminals, and when the width of the first terminals (21) is set to A and a width of the metal composition is set to B, 0.6 < A /B < 1.4 is satisfied; B is 2 to 170 μ m; a distance between two adjacent metal compositions which are on two first terminals (21) is 3 to 60 μ m; the adhesive film (10) is made of resin composition including 70 to 10 wt % filler; and a surface roughness Ra is 0.03 to 1.0 μ m.

Description

接著膜、切割片一體型接著膜、背面研磨膠帶一體型接著膜、背面研磨膠帶兼切割片一體型接著膜、疊層體、疊層體之硬化物、半導體裝置及半導體裝置之製造方法 Film, dicing sheet-integrated film, back-sand-adhesive tape-integrated film, back-grinding tape and dicing sheet-integrated film, laminate, cured product, semiconductor device, and semiconductor device manufacturing method

本發明係關於接著膜、切割片一體型接著膜、背面研磨膠帶一體型接著膜、背面研磨膠帶兼切割片一體型接著膜、疊層體、疊層體之硬化物、及半導體裝置、及半導體裝置之製造方法。 The present invention relates to an adhesive film, a dicing sheet-integrated adhesive film, a back-grinding tape integrated adhesive film, a back-grinding tape and a dicing die-integrated adhesive film, a laminate, a cured product of a laminate, a semiconductor device, and a semiconductor. The manufacturing method of the device.

本願基於2013年3月7日向日本提申的日本特願2013-045020號主張優先權，其內容在此援用。 The priority is based on Japanese Patent Application No. 2013-045020, which was filed on March 7, 2013, and the contents of which are hereby incorporated by reference.

伴隨近年來電子設備之高機能化及輕薄短小化的要求，該等電子設備所使用之半導體裝置也較以往增加，變得更小型化及多針角化。為了獲得此等半導 體裝置中的電子零件彼此、及電子零件與電路零件間等之電性連接，廣泛使用焊接。此焊接，例如半導體晶片彼此之導通接合部、以覆晶晶片裝載之如封裝體的半導體晶片與電路基板間之導通接合部、半導體晶片與已作有電子電路之半導體晶圓之導通接合部、電路基板彼此之導通接合部等。此焊接部，為了確保電性連接強度及機械性連接強度，一般係使用樹脂材料予以密封。例如：半導體晶片與電路基板間，一般係注入了稱為底層填充材(underfill)的密封樹脂(底層填充密封)。 With the recent demand for high functionality and lightness and thinness of electronic devices, the semiconductor devices used in these electronic devices have also increased in size, and have become smaller and more pleated. In order to obtain such semi-guides The electronic components in the device are electrically connected to each other and between the electronic components and the circuit components, and soldering is widely used. The soldering, for example, a conductive joint between the semiconductor wafers, a conductive joint between the semiconductor wafer and the circuit substrate, such as a package, and a conductive joint between the semiconductor wafer and the semiconductor wafer having the electronic circuit, The circuit substrates are electrically connected to each other and the like. In order to ensure electrical connection strength and mechanical connection strength, the welded portion is generally sealed with a resin material. For example, between a semiconductor wafer and a circuit board, a sealing resin (underfill sealing) called an underfill is generally injected.

將以液狀密封樹脂(底層填充材)補強由於焊接部而產生之空隙(間隙)時，係於焊接後供給液狀密封樹脂(底層填充材)，並將其硬化以補強焊接部。但是伴隨半導體裝置之薄化、小型化，焊接部變得窄節距化/窄間隙化，故於焊接後即使供給液狀密封樹脂(底層填充材)，液狀密封樹脂(底層填充材)仍不會跨進間隙間，發生難以完全填充的問題。針對如此之問題，已知有利用稱為NCF(Non-Conductive-Film)之接著膜來密封焊接部的方法(例如：參照專利文獻1)。 When the liquid sealing resin (underfill material) is used to reinforce the void (gap) generated by the welded portion, the liquid sealing resin (underfill material) is supplied after the welding, and is hardened to reinforce the welded portion. However, with the thinning and miniaturization of the semiconductor device, the welded portion has a narrow pitch and a narrow gap. Therefore, even after the liquid sealing resin (underfill material) is supplied, the liquid sealing resin (underfill material) remains. It does not step into the gap, and it is difficult to completely fill. In order to solve such a problem, a method of sealing a welded portion by using an adhesive film called NCF (Non-Conductive-Film) is known (for example, refer to Patent Document 1).

【先前技術文獻】 [Previous Technical Literature]

【專利文獻】 [Patent Literature]

【專利文獻1】日本特開2009-277818號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2009-277818

但是習知之稱為NCF的接著膜，難以兼顧充分透明性、及焊接部之可靠性，會有難以提高更窄節距化/窄間隙化之焊接部中之接合性、及於半導體裝置之製造之產量的問題。 However, it is known that the adhesive film of NCF is difficult to achieve both sufficient transparency and reliability of the welded portion, and it is difficult to improve the bonding property in the welded portion having a narrower pitch and a narrower gap, and in the manufacture of a semiconductor device. The problem of production.

本發明之目的在於供給兼顧充分透明性、及焊接部之可靠性，提高了更窄節距化/窄間隙化之焊接部中之接合性、及半導體裝置之製造之產量的接著膜，及提供焊接部之可靠性提高的半導體裝置。 An object of the present invention is to provide an adhesive film which has sufficient transparency and reliability of a welded portion, improves the bonding property in a welded portion having a narrower pitch and a narrower gap, and the yield of a semiconductor device, and provides an adhesive film. A semiconductor device in which the reliability of the solder portion is improved.

如此之目的可由下列(1)~(23)之本發明達成。 Such an object can be achieved by the present invention of the following (1) to (23).

(1)一種接著膜，其係插入於表面具有多數第1端子之電子零件、與具有對應於該端子之多數第2端子之電路零件之間，將該第1端子與第2端子予以電性地連接之端子間連接用接著膜；其特徵為：該第1端子之寬為3μm以上100μm以下，該第1端子具有被覆端子表面之至少一部分之低熔點之金屬組成物，令該第1端子之寬為A、該金屬組成物之寬為B時，滿足0.6<A/B<1.4，且B滿足2μm以上170μm以下，相鄰的第1端子彼此擁有之金屬組成物間之距離為3μm以上60μm以下，該接著膜由含有10重量%以上70重量%以下之填充材的樹脂組成物構成，表面粗糙度Ra為0.03μm以上1.0μm以下，該表面粗糙度Ra係依據日本工業規格JIS-B0601測定之算術平均粗糙度。 (1) An adhesive film which is inserted between an electronic component having a plurality of first terminals on a surface thereof and a circuit component having a plurality of second terminals corresponding to the terminal, and electrically connects the first terminal and the second terminal a bonding film for connection between terminals for connection between grounds, characterized in that the width of the first terminal is 3 μm or more and 100 μm or less, and the first terminal has a metal composition having a low melting point covering at least a part of the surface of the terminal, and the first terminal is provided When the width is A and the width of the metal composition is B, 0.6<A/B<1.4 is satisfied, and B satisfies 2 μm or more and 170 μm or less, and the distance between the metal compositions possessed by the adjacent first terminals is 3 μm or more. 60 μm or less, the adhesive film is composed of a resin composition containing 10% by weight or more and 70% by weight or less of a filler, and has a surface roughness Ra of 0.03 μm or more and 1.0 μm or less. The surface roughness Ra is based on Japanese Industrial Standard JIS-B0601. The arithmetic mean roughness of the measurement.

(2)如(1)之接著膜，其中，該接著膜於700nm之透光率為15%以上100%以下。 (2) The adhesive film according to (1), wherein the adhesive film has a light transmittance of from 100% to 100% at 700 nm.

(3)如(1)或(2)之接著膜，其中，令該表面粗糙度Ra為C、該接著膜於700nm之透光率為D時，該表面粗糙度Ra與該透光率之比[C/D]為1.8×10-2μm/%以下。 (3) The adhesive film according to (1) or (2), wherein the surface roughness Ra is C, and the light transmittance of the adhesive film at 700 nm is D, the surface roughness Ra and the light transmittance are The ratio [C/D] is 1.8 × 10 -2 μm /% or less.

(4)如(1)至(3)中任一項之接著膜，其中，該填充材之平均粒徑為0.01μm以上、0.5μm以下。 (4) The adhesive film according to any one of (1) to (3), wherein the filler has an average particle diameter of 0.01 μm or more and 0.5 μm or less.

(5)如(1)至(4)中任一項之接著膜，其中，該填充材為無機填充材。 (5) The adhesive film according to any one of (1) to (4) wherein the filler is an inorganic filler.

(6)如(1)至(5)中任一項之接著膜，其中，該樹脂組成物包含環氧樹脂、硬化劑、及成膜性樹脂。 The adhesive film according to any one of (1) to (5), wherein the resin composition contains an epoxy resin, a hardener, and a film-forming resin.

(7)如(1)至(6)中任一項之接著膜，其中，該樹脂組成物含有具有苯酚性羥基及/或具有羧基之化合物。 (7) The adhesive film according to any one of (1) to (6), wherein the resin composition contains a compound having a phenolic hydroxyl group and/or having a carboxyl group.

(8)如(7)之接著膜，其中，該化合物在樹脂組成物內的含量為3%以上20%以下。 (8) The adhesive film according to (7), wherein the content of the compound in the resin composition is 3% or more and 20% or less.

(9)如(7)或(8)之接著膜，其中，該化合物在1分子中具有2個以上之苯酚性羥基及1個以上之羧基。 (9) The adhesive film according to (7) or (8), wherein the compound has two or more phenolic hydroxyl groups and one or more carboxyl groups in one molecule.

(10)如(7)或(8)之接著膜，其中，該化合物於1分子中含有1個以上的苯醚基。 (10) The adhesive film according to (7) or (8), wherein the compound contains one or more phenylene ether groups in one molecule.

(11)如(1)至(10)中任一項之接著膜，其中，該第1端子具有柱形狀。 The adhesive film according to any one of (1) to (10), wherein the first terminal has a column shape.

(12)一種切割片一體型接著膜，係將切割片與如(1)至(11)中任一項之接著膜予以疊層。 (12) A dicing sheet-integrated film in which a dicing sheet is laminated with an adhesive film according to any one of (1) to (11).

(13)一種背面研磨膠帶一體型接著膜，係將背面研磨膠帶、與如(1)至(11)中任一項之接著膜予以疊層。 (13) A back-grinding tape-integrated film in which a back-grinding tape and a film of any one of (1) to (11) are laminated.

(14)一種背面研磨膠帶兼切割片一體型接著膜，係將背面研磨膠帶兼切割片、與如(1)至(11)中任一項之接著膜予以疊層。 (14) A back-grinding tape and a dicing sheet-integrated film, wherein a back-grinding tape and a dicing sheet are laminated with an adhesive film according to any one of (1) to (11).

(15)一種疊層體，具有：表面具有多數第1端子之電子零件、及設於該電子零件之第1端子側之如(1)至(11)中任一項之接著膜；其特徵為：該第1端子之寬為3μm以上100μm以下，該第1端子具有被覆端子表面之至少一部分之低熔點之金屬組成物，令該第1端子之寬為A、該金屬組成物之寬為B時，滿足0.6<A/B<1.4，B滿足2μm以上170μm以下，相鄰之第1端子彼此擁有之金屬組成物間之距離為3μm以上60μm以下。 (15) A laminate comprising: an electronic component having a plurality of first terminals on a surface thereof; and an adhesive film according to any one of (1) to (11) provided on a first terminal side of the electronic component; The width of the first terminal is 3 μm or more and 100 μm or less. The first terminal has a metal composition having a low melting point covering at least a part of the surface of the terminal, and the width of the first terminal is A, and the width of the metal composition is In the case of B, 0.6<A/B<1.4 is satisfied, B is 2 μm or more and 170 μm or less, and the distance between the metal compositions possessed by the adjacent first terminals is 3 μm or more and 60 μm or less.

(16)如(15)之疊層體，具有多數該電子零件、及多數如(1)至(11)中任一項之接著膜。 (16) The laminate according to (15), comprising a plurality of the electronic components, and a plurality of the adhesive films according to any one of (1) to (11).

(17)一種疊層體之硬化物，具有：表面具有多數第1端子之電子零件、具有對應於該第1端子之多數第2端子之電路零件、與插入於該電子零件與該電路零件之間之如(1)至(11)中任一項之接著膜之硬化物層；其特徵為： 該第1端子之寬為3μm以上100μm以下，該第1端子具有被覆端子表面之至少一部分之低熔點之金屬組成物，令該第1端子之寬為A、該金屬組成物之寬為B時，滿足0.6<A/B<1.4，B滿足2μm以上170μm以下，相鄰之第1端子彼此擁有之金屬組成物間之距離為3μm以上60μm以下。 (17) A cured product of a laminate comprising: an electronic component having a plurality of first terminals on its surface; a circuit component having a plurality of second terminals corresponding to the first terminal; and a component inserted in the electronic component and the circuit component A cured layer of an adhesive film according to any one of (1) to (11); characterized in that: The width of the first terminal is 3 μm or more and 100 μm or less. The first terminal has a metal composition having a low melting point covering at least a part of the surface of the terminal, and the width of the first terminal is A, and the width of the metal composition is B. It satisfies 0.6<A/B<1.4, B satisfies 2 μm or more and 170 μm or less, and the distance between the metal compositions possessed by the adjacent first terminals is 3 μm or more and 60 μm or less.

(18)如(17)之疊層體之硬化物，具有：多數該電子零件、與插入於多數該電子零件與該電路零件之間之多數如(1)至(11)中任一項之接著膜之硬化物層。 (18) The cured product of the laminate of (17), comprising: a plurality of the electronic components, and a plurality of the plurality of electronic components and the circuit component interposed between the plurality of electronic components and the circuit component, as in any one of (1) to (11) The cured layer of the film is then applied.

(19)如(17)或(18)之疊層體之硬化物，其中，該電路零件為中介片。 (19) The cured product of the laminate of (17) or (18), wherein the circuit component is an interposer.

(20)如(17)或(18)之疊層體之硬化物，其中，該電路零件為半導體晶圓。 (20) The cured product of the laminate of (17) or (18), wherein the circuit component is a semiconductor wafer.

(21)一種疊層體之硬化物，係將如(20)之疊層體之硬化物予以分切而得。 (21) A cured product of a laminate obtained by cutting a cured product of the laminate of (20).

(22)一種半導體裝置，包含如(17)至(19)、(21)中任一項之疊層體之硬化物。 (22) A semiconductor device comprising the cured product of the laminate according to any one of (17) to (19), (21).

(23)一種半導體裝置之製造方法，係在表面具有多數第1端子之電子零件與具有對應於該端子之多數第2端子之電路零件之間插入如(1)至(11)中任一項之該接著膜，並將該第1端子與第2端子予以電性地連接；其特徵為：該第1端子之寬為3μm以上100μm以下，該第1端子具有被覆端子表面之至少一部分之低熔點之金屬組成物，令該第1端子之寬為A、該金屬組成物之寬為B時，滿足0.6<A/B<1.4，B滿足2μm以上170μm以下，相鄰之第1端子彼此擁有之金屬組成物間之距離為3μm以上60μm以下。 (23) A method of manufacturing a semiconductor device, wherein any one of (1) to (11) is inserted between an electronic component having a plurality of first terminals on a surface thereof and a circuit component having a plurality of second terminals corresponding to the terminal. The bonding film is electrically connected to the first terminal and the second terminal. The first terminal has a width of 3 μm or more and 100 μm or less, and the first terminal has a low portion of at least a portion of the surface of the covered terminal. In the metal composition of the melting point, when the width of the first terminal is A and the width of the metal composition is B, 0.6 < A/B < 1.4 is satisfied, and B satisfies 2 μm or more and 170 μm or less, and the adjacent first terminals have each other. The distance between the metal compositions is 3 μm or more and 60 μm or less.

依照本發明，能提供兼顧充分透明性、及焊接部之可靠性，更窄節距化/窄間隙化之焊接部之接合性、及於電子零件之製造之產量提高的接著膜，及提供焊接部之可靠性提高的半導體裝置。 According to the present invention, it is possible to provide a bonding film which has sufficient transparency and reliability of a welded portion, and has a narrower pitch/narrow gap, a bonding property of a welded portion, and an increase in yield of an electronic component, and provides soldering. A semiconductor device with improved reliability.

10‧‧‧接著膜 10‧‧‧Next film

20‧‧‧半導體晶片(電子零件) 20‧‧‧Semiconductor wafers (electronic parts)

21‧‧‧第1端子 21‧‧‧1st terminal

22‧‧‧對準記號 22‧‧‧ alignment marks

30‧‧‧中介片(電路零件) 30‧‧‧Intermediary film (circuit parts)

31‧‧‧第2端子 31‧‧‧2nd terminal

32‧‧‧基板 32‧‧‧Substrate

33‧‧‧配線電路 33‧‧‧Wiring circuit

34‧‧‧電極墊 34‧‧‧electrode pads

35‧‧‧絕緣部 35‧‧‧Insulation

36‧‧‧對準記號 36‧‧‧ alignment marks

37‧‧‧疊層體 37‧‧‧Laminated body

38‧‧‧疊層體之硬化物 38‧‧‧ hardened body of laminate

40‧‧‧半導體晶圓(多電子零件20之集合體) 40‧‧‧Semiconductor wafers (collection of multi-electronic parts 20)

50‧‧‧切割片 50‧‧‧ cutting piece

51‧‧‧晶圓環 51‧‧‧ wafer ring

52‧‧‧切割刀片 52‧‧‧Cutting blades

53‧‧‧切口部 53‧‧‧cutting section

70‧‧‧凸塊 70‧‧‧Bumps

80‧‧‧密封層(接著膜之硬化物層) 80‧‧‧ Sealing layer (following the hardened layer of the film)

81‧‧‧連接部 81‧‧‧Connecting Department

100‧‧‧半導體裝置 100‧‧‧Semiconductor device

210‧‧‧切割膠帶一體型接著膜 210‧‧‧Cut Tape Integrated Film

211‧‧‧接著膜 211‧‧‧Next film

213‧‧‧切割膠帶 213‧‧‧Cut Tape

213a‧‧‧切割膠帶之基材層 213a‧‧‧The base layer of the cutting tape

213b‧‧‧切割膠帶之黏著層 213b‧‧‧Adhesive tape for cutting tape

300‧‧‧半導體用膜 300‧‧‧Semiconductor film

301‧‧‧背面研磨膠帶兼切割膠帶一體型接著膜 301‧‧‧Back grinding tape and cutting tape integrated film

302‧‧‧接著膜 302‧‧‧Next film

321‧‧‧剝離基材 321‧‧‧ peeling substrate

303‧‧‧半導體晶圓 303‧‧‧Semiconductor wafer

331‧‧‧機能面 331‧‧‧ functional surface

304‧‧‧研磨台座 304‧‧‧ grinding pedestal

305‧‧‧切割台 305‧‧‧ cutting table

306‧‧‧晶圓環 306‧‧‧ wafer ring

307‧‧‧刀片 307‧‧‧blade

圖1顯示使用本發明之接著膜製造之半導體裝置100之一例之示意圖(圖1(a)為俯視圖、圖1(b)為圖1(a)中之X-X線剖面圖)。 Fig. 1 is a view showing an example of a semiconductor device 100 manufactured using the adhesive film of the present invention (Fig. 1(a) is a plan view, and Fig. 1(b) is a cross-sectional view taken along line X-X in Fig. 1(a)).

圖2顯示本發明之半導體裝置100使用之電子零件20之一例之示意圖(圖2(a)為俯視圖、圖2(b)為圖2(a)中之Y-Y線剖面圖)。 2 is a schematic view showing an example of the electronic component 20 used in the semiconductor device 100 of the present invention (FIG. 2(a) is a plan view and FIG. 2(b) is a Y-Y cross-sectional view of FIG. 2(a)).

圖3(a)、(b)、(c)顯示本發明之半導體裝置100之製造方法之一例之示意圖。 3(a), (b) and (c) are schematic views showing an example of a method of manufacturing the semiconductor device 100 of the present invention.

圖4(d)、(e)、(f)顯示本發明之半導體裝置100之製造方法之一例之示意圖。 4(d), (e), and (f) are views showing an example of a method of manufacturing the semiconductor device 100 of the present invention.

圖5(a)、(b)、(c)、(d)、(e)顯示本發明之半導體裝置100之製造方法之一例之示意圖。 5(a), (b), (c), (d), and (e) are views showing an example of a method of manufacturing the semiconductor device 100 of the present invention.

圖6顯示本發明之切割膠帶一體型接著膜之一形態之剖面圖。 Fig. 6 is a cross-sectional view showing one embodiment of the dicing tape-integrated film of the present invention.

圖7顯示本發明之背面研磨膠帶兼切割膠帶一體型接著膜之一形態之剖面圖。 Fig. 7 is a cross-sectional view showing one embodiment of the back-grinding tape and the dicing tape-integrated film of the present invention.

圖8顯示本發明之背面研磨膠帶兼切割膠帶一體型接著膜之一形態之剖面圖。 Fig. 8 is a cross-sectional view showing one embodiment of the back-grinding tape and the dicing tape-integrated film of the present invention.

圖9顯示針對本發明之半導體裝置，其製造步驟之剖面圖。 Fig. 9 is a cross-sectional view showing the manufacturing steps of the semiconductor device of the present invention.

圖10顯示針對本發明之半導體裝置，其製造步驟之剖面圖。 Figure 10 is a cross-sectional view showing the manufacturing steps of the semiconductor device of the present invention.

圖11顯示針對本發明之半導體裝置，其製造步驟之剖面圖。 Figure 11 is a cross-sectional view showing the manufacturing steps of the semiconductor device of the present invention.

本發明之接著膜，係插入於表面具多數第1端子21之電子零件20、與具有對應於前述端子21之多數第2端子31的電路零件30之間，將前述第1端子與第2端子予以電性地連接之端子間連接用接著膜10，其特徵為：前述第1端子之寬為3μm以上100μm以下，前述第1端子具有覆蓋端子表面之至少一部分的低熔點之金屬組成物，且令前述第1端子之寬為A、前述金屬組成物之寬為B時，滿足0.6<A/B<1.4，且B滿足2μm以上170μm以下，相鄰之第1端子彼此擁有 之金屬組成物間之距離為3μm以上60μm以下，前述接著膜係由含有10重量%以上70重量%以下之填充材的樹脂組成物構成，表面粗糙度Ra為0.03μm以上1.0μm以下。 The adhesive film of the present invention is inserted between the electronic component 20 having a plurality of first terminals 21 on the surface and the circuit component 30 having a plurality of second terminals 31 corresponding to the terminal 21, and the first terminal and the second terminal are inserted. The connection film 10 for inter-terminal connection electrically connected is characterized in that the width of the first terminal is 3 μm or more and 100 μm or less, and the first terminal has a metal composition having a low melting point covering at least a part of the surface of the terminal, and When the width of the first terminal is A and the width of the metal composition is B, 0.6<A/B<1.4 is satisfied, and B satisfies 2 μm or more and 170 μm or less, and the adjacent first terminals have each other. The distance between the metal compositions is 3 μm or more and 60 μm or less, and the adhesive film is composed of a resin composition containing 10% by weight or more and 70% by weight or less of the filler, and the surface roughness Ra is 0.03 μm or more and 1.0 μm or less.

本發明之切割片一體型接著膜，係將切割片與前述接著膜疊層而得。 The dicing sheet-integrated film of the present invention is obtained by laminating a dicing sheet and the above-mentioned adhesive film.

本發明之疊層體37，具有：表面具有多數第1端子之電子零件20、及設於前述電子零件之第1端子側的前述接著膜10。 The laminate 37 of the present invention has an electronic component 20 having a plurality of first terminals on its surface, and the adhesive film 10 provided on the first terminal side of the electronic component.

本發明之疊層體之硬化物38，具有：前述電子零件20、具有對應於前述第1端子21之多數第2端子31的前述電路零件30、及插入於前述電子零件與前述電路零件之間的前述接著膜之硬化物層80。 The cured product 38 of the laminate of the present invention includes the electronic component 20, the circuit component 30 having a plurality of second terminals 31 corresponding to the first terminal 21, and inserted between the electronic component and the circuit component. The cured layer 80 of the aforementioned film is attached.

又，本發明之半導體裝置100包括前述疊層體之硬化物。 Moreover, the semiconductor device 100 of the present invention includes a cured product of the above laminate.

以下依據附圖詳細說明本發明之接著膜10、疊層體37、疊層體之硬化物38、半導體裝置100。 Hereinafter, the adhesive film 10, the laminate 37, the cured product 38 of the laminate, and the semiconductor device 100 of the present invention will be described in detail with reference to the accompanying drawings.

<半導體裝置> <semiconductor device>

圖1顯示使用本發明之接著膜10製造之半導體裝置100之一例之示意圖(圖1(a)為俯視圖、圖1(b)為圖1(a)中之X-X線剖面圖)。又，以下說明中，圖1中之上側稱為「上」、下側稱為「下」。 Fig. 1 is a view showing an example of a semiconductor device 100 manufactured using the bonding film 10 of the present invention (Fig. 1(a) is a plan view, and Fig. 1(b) is a cross-sectional view taken along line X-X in Fig. 1(a)). In the following description, the upper side in FIG. 1 is referred to as "upper" and the lower side is referred to as "lower".

圖1所示之半導體裝置100，具有：半導體晶片(符合本發明之電子零件之一例。)20、支持半導體晶片20之中介片(相當於本發明之電路零件之一例。)30、及多數具有導電性之凸塊70。 The semiconductor device 100 shown in FIG. 1 includes a semiconductor wafer (an example of an electronic component according to the present invention) 20, an interposer supporting the semiconductor wafer 20 (corresponding to an example of a circuit component of the present invention) 30, and a majority of Conductive bump 70.

半導體晶片20之平面視形狀，如圖1(a)所示，為正方形。又，半導體晶片20在其底面，具有用以與中介片30電性地接合的多數端子21(符合本發明之第1端子之一例)。該端子21形成於半導體晶片20之底面，不特別限定，例如由銅等導電性金屬材料構成。 The planar view shape of the semiconductor wafer 20 is square as shown in Fig. 1(a). Further, the semiconductor wafer 20 has a plurality of terminals 21 (an example of a first terminal in accordance with the present invention) for electrically bonding to the interposer 30 on the bottom surface thereof. The terminal 21 is formed on the bottom surface of the semiconductor wafer 20, and is not particularly limited, and is made of, for example, a conductive metal material such as copper.

又，中介片30為絕緣基板，例如以聚醯亞胺．環氧．氰酸酯．雙馬來醯亞胺三(BT樹脂)等各種樹脂材料構成。此中介片30之平面視形狀，如圖1(a)所示，為正方形。再者，中介片30於其頂面(其中一面)，具有例如由銅等導電性金屬材料構成之多數端子(符合本發明之第2端子。)31。 Moreover, the interposer 30 is an insulating substrate, for example, polyimine. Epoxy. Cyanate ester. Bismaleimide III Various resin materials such as (BT resin) are used. The planar shape of this interposer 30 is square as shown in Fig. 1(a). Further, the interposer 30 has a plurality of terminals (corresponding to the second terminal of the present invention) 31 made of, for example, a conductive metal material such as copper on the top surface (one surface thereof).

端子31，在半導體裝置100中，係以對應於設於半導體晶片20之端子21的方式，設置在中介片30頂面。並且，各對應的端子21與端子31，介隔連接部81而電性地連接。連接部81由導電性金屬構成。構成連接部81之導電性金屬，例如係將設置於半導體晶片20之端子21表面的至少一部分覆蓋的低熔點之金屬組成物變形而構成者。端子21之形狀不特別限定，可使用為柱形之金屬樁。金屬樁只要是以導電性金屬形成即可，不特別限定，可使用銅、鎳、鈦、鉭、鎢、金等。 The terminal 31 is provided on the top surface of the interposer 30 in the semiconductor device 100 so as to correspond to the terminal 21 provided on the semiconductor wafer 20. Further, each of the corresponding terminals 21 and 31 is electrically connected to each other via the connection portion 81. The connecting portion 81 is made of a conductive metal. The conductive metal constituting the connecting portion 81 is formed by, for example, deforming a metal composition having a low melting point covered by at least a part of the surface of the terminal 21 of the semiconductor wafer 20. The shape of the terminal 21 is not particularly limited, and a cylindrical metal post can be used. The metal post is not particularly limited as long as it is formed of a conductive metal, and copper, nickel, titanium, tantalum, tungsten, gold, or the like can be used.

又，在前述端子21與前述金屬組成物之間，可設置金屬製成的薄膜。例如：藉由具有由金等構成之薄膜，具有促進前述金屬組成物之透濕性的效果，藉由具有鎳等的阻隔金屬層，能有防止金屬組成物擴散到端子21內的效果。如此的薄膜可為單層也可以有多層。又，具有多層的情形，可以有多層由相同金屬構成之層，也可有多層由不同金屬構成之層。又，如此的薄膜為0.01μm以上、2μm以下較佳，0.05μm以上、1μm以下更理想。藉由為前述下限值以上，能於與前述金屬組成物之密合性具有充分效果，且藉由為前述下限值以下，從成本之觀點為有利。再者，也可於端子31預先設置低熔點之金屬組成物，或者端子31本身由構成連接部81之低熔點之金屬組成物構成，也可組合此等。 Further, a film made of metal may be provided between the terminal 21 and the metal composition. For example, by having a film made of gold or the like, it has an effect of promoting the moisture permeability of the metal composition, and by having a barrier metal layer such as nickel, it is possible to prevent the metal composition from diffusing into the terminal 21. Such a film may be a single layer or a plurality of layers. Further, in the case of having a plurality of layers, there may be a plurality of layers composed of the same metal, or a plurality of layers composed of different metals. Further, such a film is preferably 0.01 μm or more and 2 μm or less, more preferably 0.05 μm or more and 1 μm or less. When it is at least the above lower limit value, it can have a sufficient effect on the adhesion to the metal composition, and it is advantageous from the viewpoint of cost from the lower limit value. Further, a metal composition having a low melting point may be provided in advance at the terminal 31, or the terminal 31 itself may be composed of a metal composition having a low melting point constituting the connecting portion 81, or may be combined.

如此之低熔點之金屬組成物，只要是具有導電性且為低熔點者即可，不特別限定，例如含有選自於由錫、銀、鉛、鋅、鉍、銦及銅構成之群組中之至少2種以上之合金等。又，金屬之熔點為280℃以下較佳，更佳為240℃以下。藉由為前述理想範圍，連接部形成之加熱能於較低溫度實施，藉此能抑制後述密封層起泡。藉此能使本發明之半導體裝置之可靠性更提高。 The metal composition having such a low melting point is not particularly limited as long as it has conductivity and a low melting point, and is, for example, selected from the group consisting of tin, silver, lead, zinc, antimony, indium, and copper. At least two or more alloys. Further, the melting point of the metal is preferably 280 ° C or lower, more preferably 240 ° C or lower. By the above-described ideal range, the heating of the connection portion can be performed at a lower temperature, whereby the sealing layer foaming described later can be suppressed. Thereby, the reliability of the semiconductor device of the present invention can be further improved.

又，本實施形態中，如圖1所示，端子31設置在形成於中介片30之凹部內。又，端子21係從半導體晶片20突出之柱狀。在此，端子21為金屬樁，為圓柱形狀，但不限圓柱形狀，也可為直方體形狀、圓錐形狀等。 Further, in the present embodiment, as shown in FIG. 1, the terminal 31 is provided in the recess formed in the interposer 30. Further, the terminal 21 is formed in a columnar shape protruding from the semiconductor wafer 20. Here, the terminal 21 is a metal post and has a cylindrical shape, but is not limited to a cylindrical shape, and may have a rectangular shape, a conical shape, or the like.

又，於中介片30，貫穿其厚度方向形成有未圖示之多數通路孔(through hole：貫通孔)。 Further, in the interposer 30, a plurality of through holes (through holes) (not shown) are formed in the thickness direction.

各凸塊70各藉由各通路孔而一端(上端)連接於端子31之一部分，另一端(下端)從中介片30之底面(另一面)突出。 Each of the bumps 70 is connected to one of the terminals 31 by one end (upper end) by each of the via holes, and the other end (lower end) protrudes from the bottom surface (the other surface) of the interposer 30.

凸塊70之從中介片30突出之部分，大致成球形(Ball shape)。 The portion of the bump 70 that protrudes from the interposer 30 is substantially a ball shape.

此凸塊70，主要以例如錫焊料、銀焊料、銅焊料、磷銅之類的焊材作為主材料。 This bump 70 mainly uses a solder material such as tin solder, silver solder, copper solder, or phosphor bronze as a main material.

又，半導體晶片20與中介片30之間之間隙，填充以各種樹脂材料構成之密封材，藉此密封材之硬化物，形成密封層80。此密封層80具有提高半導體晶片20與中介片30之接合強度的機能、或防止異物、水分等侵入前述間隙之機能。 Further, a gap between the semiconductor wafer 20 and the interposer 30 is filled with a sealing material made of various resin materials, whereby the cured material of the sealing material forms the sealing layer 80. The sealing layer 80 has a function of improving the bonding strength between the semiconductor wafer 20 and the interposer 30, or a function of preventing foreign matter, moisture, or the like from entering the gap.

該構成之半導體裝置100中，密封層80之形成可使用本發明之接著膜10。 In the semiconductor device 100 of this configuration, the adhesive film 80 of the present invention can be used for the formation of the sealing layer 80.

如上述，已針對本發明之半導體裝置100中，以圖1記載之實施形態為中心說明，但不限於該實施形態。例如：電子零件20，除了半導體晶片以外，也可使用已作好電子電路之半導體晶圓及矽基板、或中介片、剛性基板、可撓性基板、剛性可撓性基板等印刷電路板，電路零件30除了使用中介片以外，也可使用半導體晶片、已作好電子電路之半導體晶圓及矽基板、或剛性基板、可撓性基板、剛性可撓性基板等印刷電路板。又，針對電子零件及電路零件，已針對正方形的態樣說明，但也可使用長方形者。又，本發明之半導體裝置100，也包括以下構成的電子零件：於中介片上於其厚度方向有多個疊層之多數半導體晶片，且有將多數半導體晶片間、及半導體晶片與中介片間有電性地接合之接合部，且具有將該接合部密封之多數密封層，該等密封層使用了本發明之接著膜的電子零件。如此之電子零件，半導體晶片可理想地使用TSV晶片(Through Silicon Vear Chip)。 As described above, the semiconductor device 100 of the present invention has been described with reference to the embodiment shown in FIG. 1, but is not limited to the embodiment. For example, in the electronic component 20, in addition to the semiconductor wafer, a semiconductor wafer and a germanium substrate on which an electronic circuit is formed, or a printed circuit board such as an interposer, a rigid substrate, a flexible substrate, or a rigid flexible substrate may be used. In addition to the interposer, the component 30 may be a semiconductor wafer, a semiconductor wafer and a germanium substrate on which an electronic circuit is formed, or a printed circuit board such as a rigid substrate, a flexible substrate, or a rigid flexible substrate. Further, for electronic parts and circuit parts, the description of the square has been made, but a rectangular shape may be used. Further, the semiconductor device 100 of the present invention includes an electronic component having a plurality of semiconductor wafers stacked on the interposer in the thickness direction thereof, and between the plurality of semiconductor wafers and between the semiconductor wafer and the interposer. The joint portion is electrically joined, and has a plurality of sealing layers that seal the joint portion, and the seal layer uses the electronic component of the adhesive film of the present invention. For such electronic parts, a semiconductor wafer can desirably use a TSV wafer (Through Silicon Vear Chip).

圖2顯示使用本發明之接著膜10製造之半導體裝置100所含之電子零件20之一例之示意圖(圖2(a)為俯視圖、圖2(b)為圖1(a)中之Y-Y線剖面圖)。又，以下說明中，圖2中之上側稱為「上」、下側稱為「下」。 2 is a schematic view showing an example of an electronic component 20 included in the semiconductor device 100 manufactured using the bonding film 10 of the present invention (FIG. 2(a) is a plan view, and FIG. 2(b) is a YY line profile in FIG. 1(a). Figure). In the following description, the upper side in FIG. 2 is referred to as "upper" and the lower side is referred to as "lower".

圖1所示之電子零件20為半導體晶片，具有多數第1端子21。該多數端子之下側具有覆蓋端子表面之至少一部分的低熔點之金屬組成物22。第1端子為 圓柱狀之柱狀，但不限於如此的形狀，也可使用有直方體形狀、圓錐形狀等者。又，第1端子不限於具有由電子零件為凸出狀之形狀，也可與前述中介片30同樣，設於設置在電子零件的凹部內。如此的情形，前述金屬組成物形成凸狀較佳。 The electronic component 20 shown in FIG. 1 is a semiconductor wafer and has a plurality of first terminals 21. The lower side of the majority of the terminals has a low melting metal composition 22 that covers at least a portion of the surface of the terminal. The first terminal is The columnar column shape is not limited to such a shape, and a rectangular parallelepiped shape, a conical shape, or the like may be used. Further, the first terminal is not limited to have a shape in which the electronic component is convex, and may be provided in a recess provided in the electronic component, similarly to the interposer 30. In such a case, it is preferable that the metal composition is formed into a convex shape.

本發明之電子零件20，當令前述第1端子之寬為A、前述金屬組成物之寬為B時，滿足0.6<A/B<1.4。更佳為0.8<A/B<1.2。藉由具有如此的結構，能防止相鄰的端子間發生漏電流，能提高焊接部之可靠性。又，當與電路零件接合時，能防止由於位置偏離之影響所致連接不良。又，B為2μm以上170μm以下，較佳為4μm以上150μm以下，更佳為10μm以上100μm以下。藉由為前述下限值以上，端子間之接合面積充足，能提高焊接部之可靠性。又，藉由為前述上限值以下，能防止相鄰端子間發生漏電流，可以提高焊接部之可靠性。又，本發明藉由使前述第1端子之寬度與前述金屬組成物之寬度為上述構成，利用接著膜之充分透明性，當將電子零件與電路零件接合時，電子零件之前述第1端子之形狀、排列可透過本發明之接著膜而充分地辨識，故能防止接合時之位置偏離。藉此能更提高本發明之半導體裝置之接合部之可靠性。又，由於防止位置偏離，可防止生產性下降，一併提高半導體裝置之製造產量。在此第1端子之寬度，係指垂直於端子之高度方向所形成之剖面當中，帶有最大面積之剖面中的最長距離(參照圖2)。例如：端子有圓柱形狀時，其剖面帶有最大面積之剖面之直徑成為寬度，若端子為橢圓形狀，其剖面帶有最大面積之剖面之長徑成為寬度，若端子具有直方體形狀時，其剖面帶有最大面積之剖面之對角線成為寬度。又，針對金屬組成物之寬度，也和第1端子同樣，代表剖面中之最長距離(參照圖2)。 In the electronic component 20 of the present invention, when the width of the first terminal is A and the width of the metal composition is B, 0.6 < A / B < 1.4 is satisfied. More preferably, it is 0.8 < A / B < 1.2. With such a configuration, it is possible to prevent leakage current from occurring between adjacent terminals, and it is possible to improve the reliability of the welded portion. Moreover, when it is joined to the circuit component, it is possible to prevent connection failure due to the influence of the positional deviation. Further, B is 2 μm or more and 170 μm or less, preferably 4 μm or more and 150 μm or less, and more preferably 10 μm or more and 100 μm or less. By the above lower limit value or more, the joint area between the terminals is sufficient, and the reliability of the welded portion can be improved. Moreover, by being equal to or less than the above upper limit value, leakage current between adjacent terminals can be prevented, and the reliability of the welded portion can be improved. Moreover, in the present invention, the width of the first terminal and the width of the metal composition are the above-described configuration, and when the electronic component is bonded to the circuit component by the sufficient transparency of the adhesive film, the first terminal of the electronic component is The shape and arrangement can be sufficiently recognized by the adhesive film of the present invention, so that the positional deviation at the time of joining can be prevented. Thereby, the reliability of the joint portion of the semiconductor device of the present invention can be further improved. Further, since the positional deviation is prevented, productivity can be prevented from being lowered, and the manufacturing yield of the semiconductor device can be improved. The width of the first terminal means the longest distance among the sections having the largest area among the sections formed perpendicular to the height direction of the terminal (see Fig. 2). For example, when the terminal has a cylindrical shape, the diameter of the section having the largest area in the cross section becomes the width. If the terminal is elliptical, the length of the section having the largest area in the section becomes the width, and if the terminal has a rectangular shape, The diagonal of the section with the largest area of the profile becomes the width. Further, the width of the metal composition also represents the longest distance in the cross section as in the first terminal (see FIG. 2).

又，本發明之電子零件20，前述金屬組成物間之距離為3μm以上60μm以下，較佳為5μm以上50μm以下，更佳為7μm以上30μm以下。藉由為前述下限值以上、及接著膜之充分透明性之組合，能透過接著膜而充分辨識電子零件中之第1端子之形狀、排列，故與電路零件接合時，能充分防止位置偏離(符合圖2中之W)。藉此，能防止位置偏離之影響引起的連接不良。又，端子間之接合面積充足，能使焊接部之可靠性提高。又，由於防止位置偏離，可防止生產 性下降，一併提高半導體裝置之製造產量。藉由為前述下限值以上，可防止相鄰之端子間發生漏電流，能使焊接部之可靠性提高。又，藉由為前述上限值以下，能於每單位面積配置多數端子，能達成高密度之端子連接。 Further, in the electronic component 20 of the present invention, the distance between the metal compositions is 3 μm or more and 60 μm or less, preferably 5 μm or more and 50 μm or less, and more preferably 7 μm or more and 30 μm or less. By combining the above lower limit value and the sufficient transparency of the adhesive film, the shape and arrangement of the first terminal in the electronic component can be sufficiently recognized by the adhesive film, so that the positional deviation can be sufficiently prevented when the circuit component is joined to the circuit component. (conforms to W in Figure 2). Thereby, it is possible to prevent connection failure caused by the influence of the positional deviation. Moreover, the joint area between the terminals is sufficient, and the reliability of the welded portion can be improved. Also, prevent production by preventing positional deviation The decline in performance will increase the manufacturing yield of semiconductor devices. By being equal to or higher than the lower limit value, it is possible to prevent leakage current from occurring between adjacent terminals, and it is possible to improve the reliability of the welded portion. Further, by being equal to or less than the above upper limit value, a large number of terminals can be arranged per unit area, and a high-density terminal connection can be achieved.

又，本發明之電子零件20，前述第1端子間之距離為5μm以上62μm以下較佳，更佳為7μm以上52μm以下，更佳為9μm以上32μm以下。藉由為前述下限值以上、及接著膜之充分透明性之組合，可透過接著膜充分辨識電子零件之第1端子之形狀、排列，故於與電路零件接合時，能充分防止位置偏離。藉此能防止由於位置偏離影響所致連接不良。又，端子間之接合面積充足，能使焊接部之可靠性提高。又，由於防止位置偏離，可防止生產性下降，一併提高半導體裝置之製造產量。藉由為前述上限值以下，能防止相鄰端子間發生漏電流並且可提高焊接部之可靠性。 Further, in the electronic component 20 of the present invention, the distance between the first terminals is preferably 5 μm or more and 62 μm or less, more preferably 7 μm or more and 52 μm or less, and still more preferably 9 μm or more and 32 μm or less. By combining the above lower limit value and the sufficient transparency of the adhesive film, the shape and arrangement of the first terminal of the electronic component can be sufficiently recognized by the adhesive film, so that the positional deviation can be sufficiently prevented when the circuit component is joined. Thereby, it is possible to prevent connection failure due to the influence of the positional deviation. Moreover, the joint area between the terminals is sufficient, and the reliability of the welded portion can be improved. Further, since the positional deviation is prevented, productivity can be prevented from being lowered, and the manufacturing yield of the semiconductor device can be improved. By being equal to or less than the above upper limit value, it is possible to prevent leakage current from occurring between adjacent terminals and to improve the reliability of the welded portion.

<接著膜> <Next film>

本發明之接著膜10，係插入於表面具多數第1端子21之電子零件20、與具有對應於前述端子21之多數第2端子31的電路零件30之間，將前述第1端子與第2端子予以電性地連接之端子間連接用接著膜10，其特徵為：前述接著膜由含有10重量%以上70重量%以下之填充材的樹脂組成物構成，且表面粗糙度Ra為0.03μm以上1.0μm以下。 The adhesive film 10 of the present invention is inserted between the electronic component 20 having a plurality of first terminals 21 and a circuit component 30 having a plurality of second terminals 31 corresponding to the terminal 21, and the first terminal and the second terminal are inserted. The adhesive film 10 for connecting the terminals to which the terminals are electrically connected is characterized in that the adhesive film is composed of a resin composition containing 10% by weight or more and 70% by weight or less of a filler, and has a surface roughness Ra of 0.03 μm or more. 1.0 μm or less.

前述接著膜10藉由具有如上述構成，能供給於兼顧充分透明性及焊接部之可靠性，較窄節距化/窄間隙化之焊接部之接合性、及於電子零件之製造之產量提高之接著膜、及提供焊接部之可靠性提高之半導體裝置。 By having the above-described configuration, the adhesive film 10 can be supplied with sufficient transparency and reliability of the welded portion, and the weldability of the welded portion having a narrow pitch and a narrow gap can be improved, and the yield of the electronic component can be improved. The film is followed by a semiconductor device that provides improved reliability of the soldered portion.

前述接著膜10，藉由係由含填充材之樹脂組成物構成，在接合之前述電子零件與前述電路零件之間，能構成均勻厚度的密封層，藉此能提高接合部之可靠性。 The adhesive film 10 is composed of a resin composition containing a filler, and a sealing layer having a uniform thickness can be formed between the bonded electronic component and the circuit component, whereby the reliability of the bonded portion can be improved.

又，前述接著膜，關於表面粗糙度具有上述構成，藉此當前述電子零件與前述電路零件接合時，具有充分透明性，能夠防止位置偏離。亦即，前述接著膜於將前述電子零件與前述電路零件接合時，係假定預先貼附在前述電子零件表面之狀態接合，但此時係以被覆前述第1端子的方式貼附。在此，前述電子 零件藉由組合有前述構成，能通過接著膜而充分地辨識電子零件之第1端子之形狀、排列，故與電路零件接合時，能充分防止位置偏離。藉此能防止位置偏離之影響所致連接不良。又，端子間之接合面積充足，能使焊接部之可靠性提高。又，由於防止位置偏離，可防止生產性下降，一併提高半導體裝置之製造產量。亦即，藉由使表面粗糙度Ra小於前述第1端子之寬度、及前述金屬組成物之寬度，能通過接著膜而充分辨識電子零件擁有的多數前述第1端子之形狀、排列，能防止位置偏離。 Further, the above-mentioned adhesive film has the above-described configuration with respect to the surface roughness, whereby when the electronic component is bonded to the circuit component, sufficient transparency is provided, and positional deviation can be prevented. In other words, when the electronic component is bonded to the circuit component, the bonding film is preliminarily attached to the surface of the electronic component, but is attached so as to cover the first terminal. Here, the aforementioned electrons By combining the above-described configurations, the shape and arrangement of the first terminals of the electronic components can be sufficiently recognized by the adhesive film, so that the positional deviation can be sufficiently prevented when the components are joined to the circuit components. Thereby, it is possible to prevent connection failure due to the influence of the positional deviation. Moreover, the joint area between the terminals is sufficient, and the reliability of the welded portion can be improved. Further, since the positional deviation is prevented, productivity can be prevented from being lowered, and the manufacturing yield of the semiconductor device can be improved. In other words, by making the surface roughness Ra smaller than the width of the first terminal and the width of the metal composition, it is possible to sufficiently recognize the shape and arrangement of the plurality of first terminals possessed by the electronic component by the bonding film, thereby preventing the position. Deviation.

前述接著膜係以含填充材之樹脂組成物構成。此樹脂組成物不特別限定，宜為硬化性樹脂組成物較佳。作為硬化性樹脂組成物，可列舉因加熱而硬化的熱硬化性樹脂組成物、或因化學線照射而硬化之硬化性樹脂組成物等，該等之中，宜使用因加熱而硬化之熱硬化性樹脂組成物較佳。因加熱而硬化之熱硬化性樹脂組成物，硬化後之機械特性優異、保存安定性優異。 The above-mentioned adhesive film is composed of a resin composition containing a filler. The resin composition is not particularly limited, and is preferably a curable resin composition. Examples of the curable resin composition include a thermosetting resin composition which is cured by heating, a curable resin composition which is cured by chemical line irradiation, and the like, and among these, heat hardening which is hardened by heating is preferably used. The resin composition is preferred. The thermosetting resin composition which is hardened by heating is excellent in mechanical properties after hardening and excellent in storage stability.

因加熱而硬化之熱硬化性樹脂組成物，含有熱硬化性樹脂成分，且於熱硬化性樹脂成分以外，也可視需要含有具助焊劑機能之化合物、成膜性樹脂、硬化劑、硬化促進劑、矽烷偶聯劑等。 The thermosetting resin composition which is cured by heating contains a thermosetting resin component, and may contain a compound having a flux function, a film-forming resin, a curing agent, and a hardening accelerator, in addition to the thermosetting resin component. , decane coupling agent, and the like.

(i)熱硬化性樹脂成分 (i) thermosetting resin component

熱硬化性樹脂成分只要是因加熱而熔融並硬化者即可，不特別限定，通常能使用可作為半導體裝置製造用之黏著劑成分者。 The thermosetting resin component is not particularly limited as long as it is melted and cured by heating, and generally, an adhesive component which can be used as a semiconductor device can be used.

作為如此之熱硬化性樹脂成分不特別限定，例如：環氧樹脂、苯氧基樹脂、矽酮樹脂、氧雜環丁烷樹脂、苯酚樹脂、(甲基)丙烯酸酯樹脂、聚酯樹脂(不飽和聚酯樹脂)、鄰苯二甲酸二烯丙酯樹脂、馬來醯亞胺樹脂、聚醯亞胺樹脂(聚醯亞胺前驅體樹脂)、雙馬來醯亞胺-三樹脂等。尤其，使用含有選自於環氧樹脂、(甲基)丙烯酸酯樹脂、苯氧基樹脂、聚酯樹脂、聚醯亞胺樹脂、矽酮樹脂、馬來醯亞胺樹脂、雙馬來醯亞胺-三樹脂構成之群組中之至少1種的熱硬化性樹脂較佳。尤其，該等之中，考慮硬化性與保存性、硬化物之耐熱性、耐濕性、耐藥品性優異之觀點，環氧樹脂為較佳。藉由使用環氧樹脂，能使前述電子零件與前述電路零件之密合更強，藉此，能提高本發明之半導體裝置之第1端子與 第2端子間之連接部之可靠性。又，由於硬化所致體積收縮小，故密封層形成時之厚度均勻性更良好。又，該等硬化性樹脂成分可以單獨使用1種也可併用2種以上。 The thermosetting resin component is not particularly limited, and examples thereof include an epoxy resin, a phenoxy resin, an anthrone resin, an oxetane resin, a phenol resin, a (meth) acrylate resin, and a polyester resin (not Saturated polyester resin), diallyl phthalate resin, maleic imine resin, polyimine resin (polyimine precursor resin), bismaleimide-three Resin, etc. In particular, the use contains an epoxy resin, a (meth) acrylate resin, a phenoxy resin, a polyester resin, a polyimide resin, an anthrone resin, a maleimide resin, and a double horse. Amine-three It is preferable that at least one of the thermosetting resins in the group of the resin is a group. In particular, among these, an epoxy resin is preferable from the viewpoint of excellent curability and preservability, heat resistance of a cured product, moisture resistance, and chemical resistance. By using an epoxy resin, the adhesion between the electronic component and the circuit component can be made stronger, whereby the reliability of the connection portion between the first terminal and the second terminal of the semiconductor device of the present invention can be improved. Further, since the volume shrinkage due to hardening is small, the thickness uniformity at the time of formation of the sealing layer is further improved. In addition, one type of these curable resin components may be used alone or two or more types may be used in combination.

前述環氧樹脂不特別限定，於室溫為液狀及於室溫為固體狀的任一環氧樹脂均可使用。又，也可以併用於室溫為液狀之環氧樹脂及於室溫為固體狀之環氧樹脂。使用液狀之環氧樹脂時，特別是單獨使用液狀之環氧樹脂時，宜為成膜性樹脂成分含有硬化性樹脂組成物之構成較佳。 The epoxy resin is not particularly limited, and any epoxy resin which is liquid at room temperature and solid at room temperature can be used. Further, it can also be used for an epoxy resin which is liquid at room temperature and an epoxy resin which is solid at room temperature. When a liquid epoxy resin is used, in particular, when a liquid epoxy resin is used alone, it is preferred that the film-forming resin component contains a curable resin composition.

於室溫(25℃)為液狀之環氧樹脂不特別限定，可列舉雙酚A型環氧樹脂、雙酚F型環氧樹脂等，可使用該等中之1種或組合2種。 The epoxy resin which is liquid at room temperature (25 ° C) is not particularly limited, and examples thereof include a bisphenol A type epoxy resin and a bisphenol F type epoxy resin. One type or a combination of two types may be used.

於室溫為液狀之環氧樹脂之環氧當量宜為150~300g/eq較佳，160~250g/eq更佳，170~220g/eq尤佳。前述環氧當量若未達前述下限，取決於使用之環氧樹脂之種類，會有硬化物之收縮率增大的傾向，含前述接著膜之半導體裝置或具備此半導體裝置之電子設備會有出現翹曲之虞。又，若超過前述上限，當硬化性樹脂組成物中併用成膜性樹脂成分時，與成膜性樹脂成分，尤其與聚醯亞胺樹脂之反應性會有呈現下降的傾向。 The epoxy equivalent of the epoxy resin at room temperature is preferably 150 to 300 g/eq, more preferably 160 to 250 g/eq, and particularly preferably 170 to 220 g/eq. If the epoxy equivalent is less than the lower limit, the shrinkage ratio of the cured product tends to increase depending on the type of the epoxy resin to be used, and the semiconductor device including the adhesive film or the electronic device including the semiconductor device may appear. Warped. In addition, when the film-forming resin component is used in combination in the curable resin composition, the reactivity of the film-forming resin component, particularly the polyimide resin, tends to decrease.

再者，於室溫(25℃)為固體狀之環氧樹脂不特別限定，可列舉雙酚A型環氧樹脂、雙酚S型環氧樹脂、苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、環氧丙胺型環氧樹脂、環氧丙酯型環氧樹脂、3官能環氧樹脂、4官能環氧樹脂等，可使用其中1種或組合使用2種以上。該等之中，使用固體3官能環氧樹脂、甲酚酚醛清漆型環氧樹脂等較佳。 Further, the epoxy resin which is solid at room temperature (25 ° C) is not particularly limited, and examples thereof include bisphenol A type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, and cresol novolac One type or two or more types may be used alone or in combination of a varnish-type epoxy resin, a acryl-acrylic epoxy resin, a glycidyl acrylate epoxy resin, a trifunctional epoxy resin, and a tetrafunctional epoxy resin. Among these, a solid trifunctional epoxy resin, a cresol novolak type epoxy resin, or the like is preferably used.

又，於室溫為固體狀之環氧樹脂之環氧當量為150~3000g/eq較佳、160~2500g/eq更佳，170~2000g/eq尤佳。 Further, the epoxy resin having a solid content at room temperature is preferably 150 to 3000 g/eq, more preferably 160 to 2500 g/eq, and particularly preferably 170 to 2000 g/eq.

於室溫為固體狀之環氧樹脂之軟化點宜為約40~120℃較佳，約50~110℃更佳，約60~100℃尤佳。若前述軟化點落於前述範圍內，能抑制前述樹脂組成物之黏性，接著膜容易操作。 The softening point of the epoxy resin which is solid at room temperature is preferably about 40 to 120 ° C, more preferably about 50 to 110 ° C, and particularly preferably about 60 to 100 ° C. When the softening point falls within the above range, the viscosity of the resin composition can be suppressed, and then the film can be easily handled.

又，前述樹脂組成物中，前述硬化性樹脂成分之摻合量可因應使用之硬化性樹脂組成物之形態適當設定。 Moreover, in the resin composition, the blending amount of the curable resin component can be appropriately set depending on the form of the curable resin composition to be used.

例如：硬化性樹脂成分之摻合量，在前述樹脂組成物中，為5重量%以上較佳，10重量%以上更佳，15重量%以上更理想、20重量%以上尤佳。又，90重量%以下較佳，85重量%以下更佳，80重量%以下更理想，75重量%以下又更理想、65重量%以下又更理想，60重量%以下尤佳。 For example, the amount of the curable resin component to be blended is preferably 5% by weight or more, more preferably 10% by weight or more, more preferably 15% by weight or more, and still more preferably 20% by weight or more. Further, 90% by weight or less is preferable, and 85% by weight or less is more preferably 80% by weight or less, more preferably 75% by weight or less, still more preferably 65% by weight or less, and still more preferably 60% by weight or less.

前述樹脂組成物中之硬化性樹脂成分之摻合量若為前述範圍內，前述電子零件與前述電路零件之黏著強度能充分確保。 When the blending amount of the curable resin component in the resin composition is within the above range, the adhesion strength between the electronic component and the circuit component can be sufficiently ensured.

(ii)成膜性樹脂成分 (ii) Film-forming resin component

如前述，前述樹脂組成物中，除了前述硬化性樹脂成分以外，宜更含有成膜性樹脂成分較佳。藉由含有成膜性樹脂成分，前述接著膜之成膜性提高且生產性提高。且一併地，前述接著膜之厚度均勻性提高，形成密封層時之厚度均勻性也提高。 As described above, in addition to the curable resin component, the resin composition preferably contains a film-forming resin component. By containing a film-forming resin component, the film formation property of the adhesive film is improved and productivity is improved. Further, the uniformity of the thickness of the adhesive film is improved, and the uniformity of thickness when the sealing layer is formed is also improved.

作為如此之成膜性樹脂成分，只要單獨具有成膜性即可，不特別限定，可使用熱塑性樹脂或熱硬化性樹脂中之任一者，也可組合此等使用。 The film-forming resin component is not particularly limited as long as it has film formability alone, and any of a thermoplastic resin and a thermosetting resin may be used, or may be used in combination.

具體而言，成膜性樹脂成分不特別限定，例如：(甲基)丙烯酸系樹脂、苯氧基樹脂、聚酯樹脂、聚胺甲酸酯樹脂、聚醯亞胺樹脂、聚醯胺醯亞胺樹脂、矽氧烷改性聚醯亞胺樹脂、聚丁二烯樹脂、聚丙烯樹脂、苯乙烯-丁二烯-苯乙烯共聚物、苯乙烯-乙烯-丁烯-苯乙烯共聚物、聚縮醛樹脂、聚乙烯基丁縮醛樹脂、聚乙烯基縮醛樹脂、丁基橡膠、氯丁二烯橡膠、聚醯胺樹脂、丙烯腈-丁二烯共聚物、丙烯腈-丁二烯-丙烯酸共聚物、丙烯腈-丁二烯-苯乙烯共聚物、聚乙酸乙烯酯、尼龍等，可使用其中1種或組合使用2種以上。其中，(甲基)丙烯酸系樹脂、苯氧基樹脂、聚酯樹脂、聚醯胺樹脂及聚醯亞胺樹脂為較佳。 Specifically, the film-forming resin component is not particularly limited, and examples thereof include a (meth)acrylic resin, a phenoxy resin, a polyester resin, a polyurethane resin, a polyimine resin, and a polyamidamine. Amine resin, decane modified polyimide resin, polybutadiene resin, polypropylene resin, styrene-butadiene-styrene copolymer, styrene-ethylene-butylene-styrene copolymer, poly Acetal resin, polyvinyl butyral resin, polyvinyl acetal resin, butyl rubber, chloroprene rubber, polyamide resin, acrylonitrile-butadiene copolymer, acrylonitrile-butadiene- The acrylic copolymer, the acrylonitrile-butadiene-styrene copolymer, the polyvinyl acetate, the nylon, and the like may be used alone or in combination of two or more. Among them, a (meth)acrylic resin, a phenoxy resin, a polyester resin, a polyamide resin, and a polyimide resin are preferable.

又，本說明書中，「(甲基)丙烯酸系樹脂」，係指(甲基)丙烯酸及其衍生物之聚合物、或(甲基)丙烯酸及其衍生物與其他單體之共聚物。在此，記載「(甲基)丙烯酸」等時，係指「丙烯酸或甲基丙烯酸」等。 In the present specification, the term "(meth)acrylic resin" refers to a polymer of (meth)acrylic acid and a derivative thereof, or a copolymer of (meth)acrylic acid and a derivative thereof and another monomer. Here, when "(meth)acrylic acid" or the like is described, it means "acrylic acid or methacrylic acid".

(甲基)丙烯酸系樹脂不特別限定，例如：聚丙烯酸、聚甲基丙烯酸、聚丙烯酸甲酯、聚丙烯酸乙酯、聚丙烯酸丁酯、聚丙烯酸-2-乙基己酯等聚丙烯酸酯、聚甲基丙烯酸甲酯、聚甲基丙烯酸乙酯、聚甲基丙烯酸丁酯等聚甲基丙烯酸酯、 聚丙烯腈、聚甲基丙烯腈、聚丙烯醯胺、丙烯酸丁酯-丙烯酸乙酯-丙烯腈共聚物、丙烯腈-丁二烯共聚物、丙烯腈-丁二烯-丙烯酸共聚物、丙烯腈-丁二烯-苯乙烯共聚物、丙烯腈-苯乙烯共聚物、甲基丙烯酸甲酯-苯乙烯共聚物、甲基丙烯酸甲酯-丙烯腈共聚物、甲基丙烯酸甲酯-α-甲基苯乙烯共聚物、丙烯酸丁酯-丙烯酸乙酯-丙烯腈-甲基丙烯酸2-羥基乙酯-甲基丙烯酸共聚物、丙烯酸丁酯-丙烯酸乙酯-丙烯腈-甲基丙烯酸2-羥基乙酯-丙烯酸共聚物、丙烯酸丁酯-丙烯腈-甲基丙烯酸2-羥基乙酯共聚物、丙烯酸丁酯-丙烯腈-丙烯酸共聚物、丙烯酸乙酯-丙烯腈-N,N-二甲基丙烯醯胺共聚物等，可使用其中1種或組合使用2種以上。其中，丙烯酸丁酯-丙烯酸乙酯-丙烯腈共聚物、丙烯酸乙酯-丙烯腈-N,N-二甲基丙烯醯胺共聚物為較佳。 The (meth)acrylic resin is not particularly limited, and examples thereof include polyacrylates such as polyacrylic acid, polymethacrylic acid, polymethyl acrylate, polyethyl acrylate, polybutyl acrylate, and polyethyl-2-ethylhexyl acrylate. Polymethacrylate, polymethyl methacrylate, polybutyl methacrylate, etc. Polyacrylonitrile, polymethacrylonitrile, polyacrylamide, butyl acrylate-ethyl acrylate-acrylonitrile copolymer, acrylonitrile-butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile -butadiene-styrene copolymer, acrylonitrile-styrene copolymer, methyl methacrylate-styrene copolymer, methyl methacrylate-acrylonitrile copolymer, methyl methacrylate-α-methyl Styrene copolymer, butyl acrylate-ethyl acrylate-acrylonitrile-2-hydroxyethyl methacrylate-methacrylic acid copolymer, butyl acrylate-ethyl acrylate-acrylonitrile-2-hydroxyethyl methacrylate -Acrylic copolymer, butyl acrylate-acrylonitrile-2-hydroxyethyl methacrylate copolymer, butyl acrylate-acrylonitrile-acrylic acid copolymer, ethyl acrylate-acrylonitrile-N,N-dimethyl propylene oxime One type of the amine copolymer or the like may be used alone or two or more types may be used in combination. Among them, a butyl acrylate-ethyl acrylate-acrylonitrile copolymer, an ethyl acrylate-acrylonitrile-N,N-dimethyl acrylamide copolymer is preferred.

又，苯氧基樹脂之骨架不特別限定，例如：雙酚A類型、雙酚F類型、聯苯酚類型及聯苯類型等。又，苯氧基樹脂宜為吸水率低者較佳，吸水率2%以下者較佳，1%以下更佳。又，針對苯氧基樹脂之環氧當量不特別限定，環氧當量愈大，不作用為熱硬化性樹脂成分，在控制接著膜之硬化性方面不生弊害，故較理想，具體而言，環氧當量為3000g/eq以上較佳、5000g/eq以上更理想。 Further, the skeleton of the phenoxy resin is not particularly limited, and examples thereof include a bisphenol A type, a bisphenol F type, a biphenol type, and a biphenyl type. Further, the phenoxy resin is preferably one having a low water absorption rate, preferably having a water absorption ratio of 2% or less, more preferably 1% or less. In addition, the epoxy equivalent of the phenoxy resin is not particularly limited, and the larger the epoxy equivalent is, the less the thermosetting resin component does not act, and it is preferable to control the curability of the adhesive film. The epoxy equivalent is preferably 3,000 g/eq or more, more preferably 5,000 g/eq or more.

又，聚醯亞胺樹脂只要是在重複單元中帶有醯亞胺鍵之樹脂即可，不特別限定，例如：使二胺與酸二酐反應，將獲得之聚醯胺酸加熱、脫水閉環而得者。 Further, the polyimine resin is not particularly limited as long as it is a resin having a quinone bond in a repeating unit, and for example, a reaction between a diamine and an acid dianhydride is carried out, and the obtained polyglycine is heated and dehydrated. And the winner.

二胺不特別限定，例如：3,3’-二甲基-4,4’-二胺基聯苯、4,6-二甲基-間苯二胺、2,5-二甲基-對苯二胺等芳香族二胺、1,3-雙(3-胺基丙基)-1,1,3,3-四甲基二矽氧烷等矽氧烷二胺，可使用其中1種或組合使用2種以上。 The diamine is not particularly limited, and examples thereof include 3,3'-dimethyl-4,4'-diaminobiphenyl, 4,6-dimethyl-m-phenylenediamine, and 2,5-dimethyl-pair. An alkanediamine such as an aromatic diamine such as phenylenediamine or a 1,3-bis(3-aminopropyl)-1,1,3,3-tetramethyldioxane may be used. Or two or more types can be used together.

又，酸二酐，例如：3,3’，4,4’-聯苯四羧酸、苯均四酸二酐、4,4’-氧基二鄰苯二甲酸二酐等，可使用其中1種或組合使用2種以上。 Further, the acid dianhydride may be, for example, 3,3',4,4'-biphenyltetracarboxylic acid, pyromellitic dianhydride or 4,4'-oxydiphthalic dianhydride. One type or two or more types can be used in combination.

聚醯亞胺樹脂可為能溶於溶劑者也可為不溶於溶劑者，從與其他成分(硬化性樹脂成分)混合時之清漆化容易進行、操作性優異之觀點，溶於溶劑者較佳。特別是，從能溶於各種有機溶劑之觀點，使用矽氧烷改性聚醯亞胺樹脂較佳。 The polyimine resin may be one which is soluble in a solvent or insoluble in a solvent. From the viewpoint of easy varnishing when mixed with other components (curable resin component) and excellent workability, it is preferably dissolved in a solvent. . In particular, it is preferred to use a decane-modified polyimine resin from the viewpoint of being soluble in various organic solvents.

成膜性樹脂之重量平均分子量不特別限定，約8,000~1,000,000較佳，約8,500~950,000更佳，約9,000~900,000又更佳。若成膜性樹脂之重量平均分子量為前述範圍，能使成膜性提高，且能抑制硬化前之前述接著膜之流動性。 The weight average molecular weight of the film-forming resin is not particularly limited, and is preferably about 8,000 to 1,000,000, more preferably about 8,500 to 950,000, and still more preferably about 9,000 to 900,000. When the weight average molecular weight of the film-forming resin is within the above range, the film formability can be improved, and the fluidity of the adhesive film before curing can be suppressed.

又，成膜性樹脂之重量平均分子量可利用例如：GPC(凝膠滲透層析)測定。 Further, the weight average molecular weight of the film-forming resin can be measured, for example, by GPC (gel permeation chromatography).

又，成膜性樹脂成分可使用其本身的市售品，再者於不損及本發明之效果之範圍內，也可使用摻合了塑化劑、安定劑、無機填料、抗靜電劑、低應力劑、抗氧化劑、塗平劑或顏料等各種添加劑者。 Further, the film-forming resin component may be a commercially available product of its own, and may be blended with a plasticizer, a stabilizer, an inorganic filler, an antistatic agent, or the like without damaging the effects of the present invention. Various additives such as low stress agents, antioxidants, coating agents or pigments.

又，前述樹脂組成物中，前述成膜性樹脂成分之摻合量可因應使用之硬化性樹脂組成物之形態適當設定。 In the resin composition, the blending amount of the film-forming resin component can be appropriately set depending on the form of the curable resin composition to be used.

例如：成膜性樹脂成分之摻合量，前述樹脂組成物中為0.1重量%以上較佳，3重量%以上更佳，5重量%以上又更佳。又，50重量%以下較佳，35重量%以下更佳，20重量%以下又更佳。成膜性樹脂成分之摻合量若為前述範圍內，能夠抑制熔融前之樹脂組成物之流動性，接著膜容易操作。 For example, the amount of the film-forming resin component to be blended is preferably 0.1% by weight or more, more preferably 3% by weight or more, and still more preferably 5% by weight or more. Further, it is preferably 50% by weight or less, more preferably 35% by weight or less, and still more preferably 20% by weight or less. When the blending amount of the film-forming resin component is within the above range, the fluidity of the resin composition before melting can be suppressed, and the film can be easily handled.

(iii)具有助焊劑(flux)機能之化合物 (iii) compounds with flux function

前述樹脂組成物，除了前述硬化性樹脂成分以外宜更含有具有助焊劑機能之化合物較佳。具有助焊劑機能之化合物，具有將形成在端子等的表面的金屬氧化膜去除的作用。所以，若樹脂組成物中含有此化合物，如後述半導體裝置之製造方法所詳述，即便在端子等的表面的低熔點之金屬的表面形成了氧化膜，仍能利用此化合物的作用確實地去除氧化膜。其結果，於前述電子零件與前述電路零件電性地連接的接合步驟中，低熔點之金屬組成物之透濕性提高，藉此，前述第1端子與前述第2端子之間以廣範圍擴大透濕，於廣範圍接合，藉此能使前述第1端子與前述第2端子確實地電性地連接。藉此，於接合部之可靠性提高，於溫度週期試驗等也呈現足夠好的結果，能使半導體裝置製造之產量提高。 It is preferable that the resin composition further contains a compound having a flux function in addition to the curable resin component. A compound having a flux function has a function of removing a metal oxide film formed on a surface of a terminal or the like. Therefore, when the resin composition contains such a compound, as described in detail in the method for producing a semiconductor device to be described later, even if an oxide film is formed on the surface of the metal having a low melting point on the surface of the terminal or the like, the effect of the compound can be surely removed. Oxide film. As a result, in the bonding step in which the electronic component and the circuit component are electrically connected, the moisture permeability of the metal composition having a low melting point is improved, whereby the first terminal and the second terminal are widely expanded. The first terminal and the second terminal are reliably electrically connected to each other by moisture permeability and bonding over a wide range. As a result, the reliability of the joint portion is improved, and the temperature cycle test and the like are also sufficiently good, and the yield of the semiconductor device manufacturing can be improved.

如此之具有助焊劑機能之化合物不特別限定，例如：具有苯酚性羥基及/或羧基之化合物較佳。 The compound having such a flux function is not particularly limited, and for example, a compound having a phenolic hydroxyl group and/or a carboxyl group is preferred.

具有苯酚性羥基之化合物，例如：苯酚、鄰甲酚、2,6-二甲酚、對甲酚、間甲酚、鄰乙基苯酚、2,4-二甲酚、2,5-二甲酚、間乙基苯酚、2,3-二甲酚、2,4,6-三甲酚(mesitol)、3,5-二甲酚、對第三丁基苯酚、兒茶酚、對第三戊苯酚、間苯二酚、對辛基苯酚、對苯基苯酚、雙酚F、雙酚A、聯苯酚、二烯丙基雙酚F、二烯丙基雙酚A、參苯酚、肆苯酚等含有苯酚性羥基之單體類、苯酚酚醛清漆樹脂、鄰甲酚酚醛清漆樹脂、雙酚F酚醛清漆樹脂、雙酚A酚醛清漆樹脂等含有苯酚性羥基之樹脂等，可使用其中1種或組合使用2種以上。 a compound having a phenolic hydroxyl group such as phenol, o-cresol, 2,6-xylenol, p-cresol, m-cresol, o-ethylphenol, 2,4-xylenol, 2,5-dimethyl Phenol, m-ethylphenol, 2,3-xylenol, 2,4,6-trimethylol (mesitol), 3,5-xylenol, p-tert-butylphenol, catechol, p-tertene Phenol, resorcinol, p-octylphenol, p-phenylphenol, bisphenol F, bisphenol A, biphenol, diallyl bisphenol F, diallyl bisphenol A, phenol, phenol, etc. a phenolic hydroxyl group-containing monomer, a phenol novolak resin, an o-cresol novolak resin, a bisphenol F novolak resin, a bisphenol A novolac resin, or the like, and a phenolic hydroxyl group-containing resin, etc., one or a combination of which may be used. Use two or more types.

又，具有羧基之化合物，例如：脂肪族酸酐、脂環族酸酐、芳香族酸酐、脂肪族羧酸、芳香族羧酸等。作為前述脂肪族酸酐，可列舉琥珀酸酐、聚己二酸酐、聚壬二酸酐、聚癸二酸酐等。前述脂環族酸酐可列舉甲基四氫鄰苯二甲酸酐、甲基六氫鄰苯二甲酸酐、甲基希米酸(methyl himic acid)酐、六氫鄰苯二甲酸酐、四氫鄰苯二甲酸酐、三烷基四氫鄰苯二甲酸酐、甲基環己烯二羧酸酐等。作為前述芳香族酸酐，可列舉鄰苯二甲酸酐、偏苯三甲酸酐、苯均四酸酐、二苯基酮四羧酸酐、雙偏苯三甲酸乙二醇酯、參偏苯三甲酸甘油酯等，可使用其中1種或組合使用2種以上。 Further, a compound having a carboxyl group is, for example, an aliphatic acid anhydride, an alicyclic acid anhydride, an aromatic acid anhydride, an aliphatic carboxylic acid or an aromatic carboxylic acid. Examples of the aliphatic acid anhydride include succinic anhydride, polyadipate anhydride, polysebacic anhydride, and polysebacic anhydride. Examples of the alicyclic acid anhydride include methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methyl himic acid anhydride, hexahydrophthalic anhydride, and tetrahydrogen Phthalic anhydride, trialkyltetrahydrophthalic anhydride, methylcyclohexene dicarboxylic anhydride, and the like. Examples of the aromatic acid anhydride include phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, diphenylketone tetracarboxylic anhydride, ethylene terephthalate, and glyceryl trimellitate. One type or two or more types may be used in combination.

作為脂肪族羧酸不特別限定，例如：甲酸、乙酸、丙酸、丁酸、戊酸、三甲基乙酸、己酸、辛酸、月桂酸、肉豆蔻酸、棕櫚酸、硬脂酸、丙烯酸、甲基丙烯酸、巴豆酸、油酸、富馬酸、馬來酸、草酸、丙二酸、琥珀酸、戊二酸、己二酸、癸二酸、十二烷二酸、庚二酸等，可使用其中1種或組合使用2種以上。該等之中，宜使用下式(1)表示之脂肪族羧酸較佳：HOOC-(CH2)n-COOH (1) The aliphatic carboxylic acid is not particularly limited, and examples thereof include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, trimethylacetic acid, caproic acid, octanoic acid, lauric acid, myristic acid, palmitic acid, stearic acid, and acrylic acid. Methacrylic acid, crotonic acid, oleic acid, fumaric acid, maleic acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, sebacic acid, dodecanedioic acid, pimelic acid, etc. One type or two or more types may be used in combination. Among these, it is preferred to use an aliphatic carboxylic acid represented by the following formula (1): HOOC-(CH 2 ) n -COOH (1)

(式(1)中，n為1~20之整數。) (In the formula (1), n is an integer from 1 to 20.)

，其中己二酸、癸二酸、十二烷二酸更佳。 Among them, adipic acid, sebacic acid and dodecanedioic acid are more preferable.

芳香族羧酸之結構不特別限定，下式(2)或下式(3)表示之化合物為較佳。 The structure of the aromatic carboxylic acid is not particularly limited, and a compound represented by the following formula (2) or the following formula (3) is preferred.

[式中，R1~R5各自獨立地為1價之有機基，R1~R5中至少其中之一為羥基。] [wherein, R 1 to R 5 are each independently a monovalent organic group, and at least one of R 1 to R 5 is a hydroxyl group. ]

[式中，R6~R20各自獨立地為1價之有機基，R6~R20中至少其中之一為羥基或羧基。] [wherein, R 6 to R 20 are each independently a monovalent organic group, and at least one of R 6 to R 20 is a hydroxyl group or a carboxyl group. ]

如此之芳香族羧酸，例如：苯甲酸、鄰苯二甲酸、間苯二甲酸、對苯二甲酸、半蜜蠟酸(Hemimellitic acid)、偏苯三甲酸、對稱苯三甲酸、1,2,3,5-苯四甲酸(Mellophanic acid)、1,2,3,4-苯四甲酸(Prehnitic acid)、苯均四酸、蜜蠟酸、茬甲酸、2,3-二甲基苯甲酸(hemellitic acid)、均三甲酸、2,3,4-三甲苯甲酸(Prehnitylic acid)、甲苯甲酸、桂皮酸、2-羥基苯甲酸、3-羥基苯甲酸、4-羥基苯甲酸、2，3-二羥基苯甲酸、2,4-二羥基苯甲酸、龍膽酸(gentisinic acid)(2,5-二羥基苯甲酸)、2,6-二羥基苯甲酸、3,5-二羥基苯甲酸、没食子酸(3,4,5-三羥基苯甲酸)等苯甲酸衍生物、 1,4-二羥基-2-萘甲酸、3,5-二羥基-2-萘甲酸、3,5-二羥基-2-萘甲酸等萘甲酸衍生物、還原酚酞、二苯酚酸等，可使用其中1種或組合使用2種以上。 Such aromatic carboxylic acids, such as: benzoic acid, phthalic acid, isophthalic acid, terephthalic acid, Hemimellitic acid, trimellitic acid, symmetrical trimellitic acid, 1, 2, 3,5-benzenetetracarboxylic acid (Mellophanic acid), 1,2,3,4-benzenetetracarboxylic acid (Prehnitic acid), pyromellitic acid, beeswavic acid, indolecarboxylic acid, 2,3-dimethylbenzoic acid ( Hemellitic acid), meta-tricarboxylic acid, 2,3,4-trimethylglycolic acid (Prehnitylic acid), toluic acid, cinnamic acid, 2-hydroxybenzoic acid, 3-hydroxybenzoic acid, 4-hydroxybenzoic acid, 2,3- Dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisinic acid (2,5-dihydroxybenzoic acid), 2,6-dihydroxybenzoic acid, 3,5-dihydroxybenzoic acid, a benzoic acid derivative such as gallic acid (3,4,5-trihydroxybenzoic acid), a naphthoic acid derivative such as 1,4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2-naphthoic acid or 3,5-dihydroxy-2-naphthoic acid, or a reduced phenolphthalein or diphenolic acid, etc. One type or two or more types may be used in combination.

如此之具有助焊劑機能之化合物，宜使用具有苯酚性羥基及/或羧基且更含有苯醚基之化合物更佳。含有苯酚性羥基及/或羧基、及苯醚基之化合物，例如：2-苯氧基苯酚、3-苯氧基苯酚、4-苯氧基苯酚、2-(4-羥基苯氧基)苯酚、3-(4-羥基苯氧基)苯酚、4-(4-羥基苯氧基)苯酚、3-羥基呫噸-9-酮、5-硝基螢光素、6-硝基螢光素、9-苯基呫噸-9-醇、2,6,7-三羥基-9-苯基-3-異呫噸酮、1,3-雙(4-羥基苯氧基)苯、1,4-雙(3-羥基苯氧基)苯、4,4’-二羥基二苯醚、2,2’-二羥基二苯醚、螢光素等含有苯酚性羥基與苯醚基之化合物；2-苯氧基苯甲酸、3-苯氧基苯甲酸、4-苯氧基苯甲酸、2-(4-羧基苯氧基)苯甲酸、3-(4-羧基苯氧基)苯甲酸、4-(4-羧基苯氧基)苯甲酸、2-(9-側氧基呫噸-2-基)丙酸、呫噸-9-羧酸、3,5-雙(4-胺基苯氧基)苯甲酸、4,4’-氧基雙苯甲酸等含有羧基與苯醚基之化合物；2-(4-羥基苯氧基)苯甲酸、3-(4-羥基苯氧基)苯甲酸、4-(4-羥基苯氧基)苯甲酸、螢光素、DL-酪胺酸等含有苯酚性羥基與羧基與苯醚基之化合物，可使用其中1種或組合使用2種以上。含有羧基與苯醚基之化合物較佳，含有苯酚性羥基與羧基與苯醚基之化合物更理想。 As such a compound having a flux function, it is preferred to use a compound having a phenolic hydroxyl group and/or a carboxyl group and further containing a phenyl ether group. a compound containing a phenolic hydroxyl group and/or a carboxyl group and a phenyl ether group, for example, 2-phenoxyphenol, 3-phenoxyphenol, 4-phenoxyphenol, 2-(4-hydroxyphenoxy)phenol , 3-(4-hydroxyphenoxy)phenol, 4-(4-hydroxyphenoxy)phenol, 3-hydroxyxanthene-9-one, 5-nitrofluorescein, 6-nitrofluorescein , 9-phenylxanthene-9-ol, 2,6,7-trihydroxy-9-phenyl-3-isoxanthone, 1,3-bis(4-hydroxyphenoxy)benzene, 1, a compound containing a phenolic hydroxyl group and a phenyl ether group, such as 4-bis(3-hydroxyphenoxy)benzene, 4,4'-dihydroxydiphenyl ether, 2,2'-dihydroxydiphenyl ether, or fluorescein; 2-phenoxybenzoic acid, 3-phenoxybenzoic acid, 4-phenoxybenzoic acid, 2-(4-carboxyphenoxy)benzoic acid, 3-(4-carboxyphenoxy)benzoic acid, 4-(4-carboxyphenoxy)benzoic acid, 2-(9-sideoxyxan-2-yl)propionic acid, xanthene-9-carboxylic acid, 3,5-bis(4-aminobenzene) a compound containing a carboxyl group and a phenyl ether group such as oxy)benzoic acid or 4,4'-oxybisbenzoic acid; 2-(4-hydroxyphenoxy)benzoic acid, 3-(4-hydroxyphenoxy)benzene Formic acid, 4-(4-hydroxyphenoxy)benzoic acid, luciferin, DL-tyramine, etc. contain phenolic properties The phenyl group and the carboxyl group of an ether, which may be used alone or in combination of two or more thereof. A compound having a carboxyl group and an phenyl ether group is preferred, and a compound having a phenolic hydroxyl group and a carboxyl group and a phenyl ether group is more preferable.

如此之具有助焊劑機能之化合物，宜為顯示助焊劑作用，且同時具有作為使硬化性樹脂成分硬化之硬化劑的機能，亦即，具有能與硬化性樹脂成分反應之官能基較佳。 The compound having such a flux function is preferably a function of exhibiting a flux and having a function as a curing agent for curing the curable resin component, that is, a functional group capable of reacting with the curable resin component.

如此之官能基可因應硬化性樹脂成分之種類適當選擇，例如：硬化性樹脂成分為環氧樹脂之情形，可列舉如羧基、羥基、胺基之類之能與環氧基反應之官能基。如此之具有助焊劑機能之化合物，於硬化性樹脂組成物熔融時將在低熔 點之金屬組成物表面形成之氧化膜除去而提高該等表面之透濕性，容易成形連接部81，能使前述第1端子與前述第2端子電性地連接。再者，將利用連接部完成端子間電性連接後，此化合物作為硬化劑，附加於硬化性樹脂成分而發揮提高樹脂之彈性係數或Tg之機能。因此若使用如此之具有助焊劑機能之化合物作為助焊劑，不須助焊劑洗滌，能夠確實地抑制或防止因為助焊劑殘存引起的離子遷移發生等。 Such a functional group can be appropriately selected depending on the type of the curable resin component. For example, when the curable resin component is an epoxy resin, a functional group capable of reacting with an epoxy group such as a carboxyl group, a hydroxyl group or an amine group can be mentioned. Such a compound having a flux function will be in a low melting state when the curable resin composition is melted. The oxide film formed on the surface of the metal composition of the dot is removed to improve the moisture permeability of the surfaces, and the connection portion 81 is easily molded, and the first terminal and the second terminal can be electrically connected. In addition, after the terminal is electrically connected to each other by the connection portion, the compound acts as a curing agent and is added to the curable resin component to exhibit a function of increasing the elastic modulus or Tg of the resin. Therefore, if such a compound having a flux function is used as a flux, it is possible to surely suppress or prevent ion migration due to the residual of the flux, without the need for flux cleaning.

作為具有如此作用之助焊劑(flux)機能之化合物，可列舉具有至少1個羧基之化合物。例如：硬化性樹脂成分為環氧樹脂之情形，可列舉脂肪族二羧酸、及具有羧基與苯酚性羥基之化合物等。 Examples of the compound having a flux function as described above include a compound having at least one carboxyl group. For example, when the curable resin component is an epoxy resin, an aliphatic dicarboxylic acid, a compound having a carboxyl group and a phenolic hydroxyl group, and the like can be given.

作為前述脂肪族二羧酸不特別限定，可列舉於脂肪族烴基鍵結了2個羧基的化合物。前述脂肪族烴基可為飽和或不飽和非環族，也可為飽和或不飽和之環族。又，脂肪族烴基為非環族的情形，可為直鏈狀也可為分支狀。 The aliphatic dicarboxylic acid is not particularly limited, and examples thereof include a compound in which two carboxyl groups are bonded to an aliphatic hydrocarbon group. The aforementioned aliphatic hydrocarbon group may be a saturated or unsaturated acyclic group, and may also be a saturated or unsaturated ring group. Further, in the case where the aliphatic hydrocarbon group is acyclic, it may be linear or branched.

如此之脂肪族二羧酸，例如：前述式(1)中之n為1~20之整數的化合物。前述式(1)中之n若為前述範圍內，則助焊劑活性、黏著時之散逸氣體及硬化性樹脂組成物之硬化後之彈性係數及玻璃轉移溫度之均衡性良好。尤其，考慮抑制硬化性樹脂組成物之硬化後彈性係數增加並且使與中介片30等被黏著物之黏著性提高之觀點，n為3以上較佳，考慮抑制彈性係數下降，且更提高連接可靠性之觀點，n為10以下較佳。 Such an aliphatic dicarboxylic acid is, for example, a compound in which n in the above formula (1) is an integer of from 1 to 20. When n in the above formula (1) is within the above range, the balance between the flux activity, the fugitive gas at the time of adhesion, and the elastic modulus of the curable resin composition after curing and the glass transition temperature are good. In particular, in view of suppressing an increase in the elastic modulus after curing of the curable resin composition and improving the adhesion to the adherend such as the interposer 30, n is preferably 3 or more, and it is considered to suppress the decrease in the elastic modulus and to improve the connection reliability. From the viewpoint of sex, n is preferably 10 or less.

又，前述式(1)表示之脂肪族二羧酸，可列舉戊二酸、己二酸、庚二酸、辛二酸、壬二酸、癸二酸、十一烷二酸、十二烷二酸、十三烷二酸、十四烷二酸、十五烷二酸、十八烷二酸、十九烷二酸、二十烷二酸等。其中，己二酸、辛二酸、癸二酸、十二烷二酸較佳，癸二酸更理想。 Further, examples of the aliphatic dicarboxylic acid represented by the above formula (1) include glutaric acid, adipic acid, pimelic acid, suberic acid, sebacic acid, sebacic acid, undecanedioic acid, and dodecane. Diacid, tridecanedioic acid, tetradecanedioic acid, pentadecanedioic acid, octadecanedioic acid, nonadecanedioic acid, eicosanedioic acid and the like. Among them, adipic acid, suberic acid, sebacic acid, and dodecanedioic acid are preferred, and sebacic acid is more desirable.

再者，作為具有羧基與苯酚性羥基之化合物，可列舉2-羥基苯甲酸、3-羥基苯甲酸、4-羥基苯甲酸、2,3-二羥基苯甲酸、2,4-二羥基苯甲酸、龍膽酸(2,5-二羥基苯甲酸)、2,6-二羥基苯甲酸、3,4-二羥基苯甲酸、没食子酸(3,4,5-三羥基苯甲酸)等苯甲酸衍生物、1,4-二羥基-2-萘甲酸、3,5-二羥基-2-萘甲酸等萘甲酸衍生物、還原酚酞、二苯酚酸等。其中，還原酚酞、龍膽酸、2,4-二羥基苯甲酸、2,6-二羥基苯甲酸較佳，還原酚酞、龍膽酸更理想。 Further, examples of the compound having a carboxyl group and a phenolic hydroxyl group include 2-hydroxybenzoic acid, 3-hydroxybenzoic acid, 4-hydroxybenzoic acid, 2,3-dihydroxybenzoic acid, and 2,4-dihydroxybenzoic acid. , benzoic acid (2,5-dihydroxybenzoic acid), 2,6-dihydroxybenzoic acid, 3,4-dihydroxybenzoic acid, gallic acid (3,4,5-trihydroxybenzoic acid), etc. a derivative, a naphthoic acid derivative such as 1,4-dihydroxy-2-naphthoic acid or 3,5-dihydroxy-2-naphthoic acid, or a reduced phenolphthalein or diphenolic acid. Among them, phenolphthalein, gentisic acid, 2,4-dihydroxybenzoic acid, 2,6-dihydroxybenzoic acid are preferred, and phenolphthalein and gentisic acid are more preferred.

如前述具有助焊劑機能之化合物，可單獨使用1種也可併用2種以上。 The compound having a flux function as described above may be used alone or in combination of two or more.

又，任一化合物均易吸濕，成為空隙(void)發生的原因，故本發明宜於使用前預先使其乾燥較佳。 Further, any of the compounds is easily hygroscopic and causes voids to occur, so that the present invention is preferably dried before use.

具有助焊劑機能之化合物之含量，可因應使用之樹脂組成物之形態適當設定。 The content of the compound having the flux function can be appropriately set depending on the form of the resin composition to be used.

如此之具有助焊劑機能之化合物之含量，相對於前述樹脂組成物之全部重量宜為1重量%以上較佳，3重量%以上更佳，5重量%以上尤佳。又，50重量%以下較佳，40重量%以下更佳，30重量%以下又更佳，25重量%以下尤佳。 The content of the compound having such a flux function is preferably 1% by weight or more, more preferably 3% by weight or more, and particularly preferably 5% by weight or more based on the total weight of the resin composition. Further, it is preferably 50% by weight or less, more preferably 40% by weight or less, still more preferably 30% by weight or less, and still more preferably 25% by weight or less.

具有助焊劑機能之化合物之含量若為前述範圍內，能將在低熔點之金屬組成物等的表面等形成的氧化膜確實除去，藉此能使前述電子零件與前述電路零件確實地電性地接合。再者，具有助焊劑機能之化合物為能與硬化性樹脂成分反應之化合物之情形，硬化時能以良好效率附加於硬化性樹脂成分而提高硬化性樹脂組成物之彈性係數或Tg。又，還能抑制未反應之具有助焊劑機能之化合物引起的離子遷移發生。藉此，接合部之可靠性提高，且於溫度周期試驗等也可達成高可靠性，能使半導體裝置製造之產量提高。 When the content of the compound having a flux function is within the above range, the oxide film formed on the surface of the metal composition having a low melting point or the like can be surely removed, whereby the electronic component and the circuit component can be electrically electrically Engage. Further, in the case where the compound having the flux function is a compound capable of reacting with the curable resin component, the curing factor can be added to the curable resin component with good efficiency, and the elastic modulus or Tg of the curable resin composition can be improved. Further, it is possible to suppress the occurrence of ion migration caused by the unreacted compound having a flux function. As a result, the reliability of the joint portion is improved, and high reliability can be achieved in a temperature cycle test or the like, and the yield of the semiconductor device can be improved.

(iv)硬化劑 (iv) hardener

硬化劑不特別限定，例如：苯酚類、胺類、硫醇類等。如此之硬化劑可以因應硬化性樹脂成分之種類等適當選擇。例如：硬化性樹脂成分使用環氧樹脂時，考慮可獲得與環氧樹脂之良好反應性、硬化時之低尺寸變化及硬化後之適當物性(例如：耐熱性、耐濕性等)之觀點，硬化劑宜使用苯酚類較佳，考慮硬化性樹脂成分之硬化後之物性優良的觀點，宜使用2官能以上之苯酚類更佳。又，如此之硬化劑可以單獨使用1種也可併用2種以上。 The curing agent is not particularly limited, and examples thereof include phenols, amines, and mercaptans. Such a curing agent can be appropriately selected depending on the type of the curable resin component and the like. For example, when an epoxy resin is used as the curable resin component, it is considered that good reactivity with the epoxy resin, low dimensional change during curing, and appropriate physical properties after curing (for example, heat resistance, moisture resistance, etc.) can be obtained. The phenol is preferably used as the curing agent, and from the viewpoint of excellent physical properties after curing of the curable resin component, it is preferred to use a phenol having two or more functional groups. Further, such a curing agent may be used alone or in combination of two or more.

苯酚類，例如：雙酚A、四甲基雙酚A、二烯丙基雙酚A、聯苯酚、雙酚F、二烯丙基雙酚F、參苯酚、肆苯酚、苯酚酚醛清漆樹脂、甲酚酚醛清漆樹脂等，可使用其中1種或組合使用2種以上。該等之中，考慮熔融黏度、與環氧樹脂之反應性良好、硬化後之物性優良的觀點，苯酚酚醛清漆樹脂及甲酚酚醛清漆樹脂為較佳。 Phenols, for example: bisphenol A, tetramethyl bisphenol A, diallyl bisphenol A, biphenol, bisphenol F, diallyl bisphenol F, phenol, phenol, phenol novolac resin, One type of the cresol novolac resin or the like may be used alone or two or more types may be used in combination. Among these, a phenol novolac resin and a cresol novolak resin are preferable from the viewpoints of good melt viscosity, good reactivity with an epoxy resin, and excellent physical properties after curing.

又，硬化性樹脂組成物中，前述硬化劑之摻合量，於使用之硬化性樹脂成分或硬化劑之種類、及具有助焊劑機能之化合物具有作為硬化劑作用的官能基時，因應其官能基種類或使用量適當設定。 Further, in the curable resin composition, when the amount of the curing agent to be blended is such that the type of the curable resin component or the curing agent to be used and the compound having the flux function have a functional group acting as a curing agent, The base type or usage amount is set as appropriate.

例如：硬化性樹脂使用環氧樹脂的情形，硬化劑之含量相對於前述樹脂組成物之全部重量宜為約0.1~50重量%較佳，約2~40重量%更佳，約4~40重量%更理想，8~30重量%尤佳。硬化劑之含量若為前述範圍內，在端子間形成之連接部之電連接強度及機械性黏著強度能夠充分確保。 For example, in the case where an epoxy resin is used as the curable resin, the content of the hardener is preferably about 0.1 to 50% by weight, more preferably about 2 to 40% by weight, and preferably about 4 to 40% by weight based on the total weight of the resin composition. % is more ideal, especially 8 to 30% by weight. When the content of the curing agent is within the above range, the electrical connection strength and the mechanical adhesive strength of the connecting portion formed between the terminals can be sufficiently ensured.

(v)硬化促進劑 (v) hardening accelerator

又，如前述，前述樹脂組成物可進一步添加硬化促進劑。藉此能使前述樹脂組成物確實且容易硬化。 Further, as described above, the resin composition may further contain a curing accelerator. Thereby, the aforementioned resin composition can be surely and easily cured.

硬化促進劑不特別限定，例如：咪唑、2-甲基咪唑、2-十一基咪唑、2-十五基咪唑、1,2-二甲基咪唑、2-乙基-4-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、1-苄基-2-苯基咪唑、1-苄基-2-甲基咪唑、1-氰基乙基-2-甲基咪唑、1-氰基乙基-2-乙基-4-甲基咪唑、1-氰基乙基-2-十一基咪唑、1-氰基乙基-2-苯基咪唑、2-苯基-4,5-二羥基二甲基咪唑、2-苯基-4-甲基-5-羥基甲基咪唑等咪唑化合物、1-氰基乙基-2-十一基咪唑啉偏苯三甲酸鹽、1-氰基乙基-2-苯基咪唑啉偏苯三甲酸鹽、2,4-二胺基-6-[2’-甲基咪唑基(1’)]-乙基-s-三、2,4-二胺基-6-[2’-十一基咪唑基(1’)]-乙基-s-三、2,4-二胺基-6-[2’-乙基-4-甲基咪唑基(1’)]-乙基-s-三、2,4-二胺基-6-[2’-甲基咪唑基(1’)]-乙基-s-三之異三聚氰酸加成物、2-苯基咪唑之異三聚氰酸加成物、2-甲基咪唑之異三聚氰酸加成物、1,8-二氮雜雙環(5,4,0)十一烯等胺系硬化劑、三苯基膦或四取代鏻與多官能苯酚化合物之鹽等磷系硬化促進劑，可使用其中1種或組合使用2種以上。該等之中，宜為能兼具膜狀之樹脂層之硬化性、保存性、對於半導體元件上之金屬電極之耐腐蝕性的咪唑化合物、磷系硬化促進劑為較佳。 The hardening accelerator is not particularly limited, and examples thereof include imidazole, 2-methylimidazole, 2-undecylimidazole, 2-pentadecylimidazole, 1,2-dimethylimidazole, and 2-ethyl-4-methylimidazole. , 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-phenylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-methyl Imidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole, 2- Imidazole compound such as phenyl-4,5-dihydroxydimethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 1-cyanoethyl-2-undecylimidazoline benzene Triformate, 1-cyanoethyl-2-phenylimidazoline trimellitate, 2,4-diamino-6-[2'-methylimidazolyl(1')]-ethyl- S-three 2,4-Diamino-6-[2'-undecylimidazolyl (1')]-ethyl-s-three 2,4-Diamino-6-[2'-ethyl-4-methylimidazolyl(1')]-ethyl-s-three 2,4-Diamino-6-[2'-methylimidazolyl(1')]-ethyl-s-three An isomeric cyanuric acid addition product, an isomeric cyanuric acid addition product of 2-phenylimidazole, an isomeric cyanuric acid addition product of 2-methylimidazole, 1,8-diazabicyclo ring (5) A phosphorus-based hardening accelerator such as an amine-based curing agent such as an amine-based curing agent such as tetradecene or a triphenylphosphine or a tetra-substituted fluorene compound or a salt of a polyfunctional phenol compound may be used alone or in combination of two or more. Among these, an imidazole compound or a phosphorus-based hardening accelerator which is capable of having both the curable property and the storage property of the film-like resin layer and the corrosion resistance to the metal electrode on the semiconductor element is preferable.

又，樹脂組成物中，前述硬化促進劑之摻合量，可因應使用之硬化促進劑之種類適當設定。 Further, in the resin composition, the blending amount of the curing accelerator may be appropriately set depending on the type of the curing accelerator to be used.

例如：使用咪唑化合物之情形，咪唑化合物之摻合量，於前述樹脂組成物中宜為0.001重量%以上較佳，0.003重量%以上更佳，0.005重量%以上又更佳。又，1.0重量%以下較佳，0.7重量%以下更佳，0.5重量%以下又更佳。咪唑化合物之摻合量若未達前述下限，取決於使用之硬化促進劑之種類，會有無法充分發揮 作為硬化促進劑之作用，硬化性樹脂組成物無法充分硬化的傾向。又，咪唑化合物之摻合量若超過前述上限，熔融狀態之低熔點之金屬組成物無法在硬化性樹脂組成物之硬化完成前發揮充分透濕性，電性連接有不足之虞。 For example, in the case of using an imidazole compound, the amount of the imidazole compound to be blended is preferably 0.001% by weight or more, more preferably 0.003% by weight or more, and still more preferably 0.005% by weight or more. Further, it is preferably 1.0% by weight or less, more preferably 0.7% by weight or less, and still more preferably 0.5% by weight or less. If the blending amount of the imidazole compound does not reach the above lower limit, depending on the type of the hardening accelerator to be used, the amount of the hardening accelerator may not be sufficiently exerted. As a function of the hardening accelerator, the curable resin composition tends to be insufficiently cured. When the blending amount of the imidazole compound exceeds the above upper limit, the metal composition having a low melting point in a molten state cannot exhibit sufficient moisture permeability before the curing of the curable resin composition is completed, and electrical connection may be insufficient.

(vi)矽烷偶聯劑 (vi) decane coupling agent

又，如前述，前述樹脂組成物可更添加矽烷偶聯劑。 Further, as described above, the resin composition may further contain a decane coupling agent.

矽烷偶聯劑不特別限定，例如：環氧矽烷偶聯劑、含有芳香族之胺基矽烷偶聯劑等。藉由添加如此之矽烷偶聯劑，接著膜與被黏附體間之密合性，尤其與中介片等之密合性能提高。 The decane coupling agent is not particularly limited, and examples thereof include an epoxy decane coupling agent, an aromatic amino decane coupling agent, and the like. By adding such a decane coupling agent, the adhesion between the film and the adherend is improved, and especially the adhesion property to the interposer or the like is improved.

又，如此之矽烷偶聯劑可以單獨使用1種也可併用2種以上。 In addition, one type of the decane coupling agent may be used alone or two or more types may be used in combination.

又，硬化性樹脂組成物中，前述矽烷偶聯劑之摻合量可因應前述被黏附體或硬化性樹脂成分等種類適當設定。例如：前述樹脂組成物中之0.01重量%以上較佳，0.05重量%以上更佳，0.1重量%以上又更佳。又，2重量%以下較佳，1.5重量%以下更佳，1重量%以下又更佳。 In the curable resin composition, the blending amount of the decane coupling agent can be appropriately set depending on the type of the adherend or the curable resin component. For example, 0.01% by weight or more of the resin composition is more preferably 0.05% by weight or more, more preferably 0.1% by weight or more. Further, it is preferably 2% by weight or less, more preferably 1.5% by weight or less, and still more preferably 1% by weight or less.

(vii)填充材 (vii) filler

又，前述樹脂組成物含有填充材。藉此可對於接著膜附加各種物性、或達成可靠性提高。填充材可列舉橡膠粒子等由有機材料製得之填充材、或二氧化矽等無機填充材，但考慮可靠性提高之觀點，無機填充材為較佳。藉由含有無機填充材，能降低密封層之線膨脹係數，藉此可提高可靠性。 Further, the resin composition contains a filler. Thereby, various physical properties can be added to the adhesive film, or reliability can be improved. Examples of the filler include a filler obtained from an organic material such as rubber particles or an inorganic filler such as ruthenium dioxide. However, from the viewpoint of improving reliability, an inorganic filler is preferred. By containing an inorganic filler, the linear expansion coefficient of the sealing layer can be lowered, whereby reliability can be improved.

無機填充材不特別限定，例如：銀、氧化鈦、二氧化矽、雲母、氧化鋁等，也可含有此等中之多種。如上，無機填充材可從多種中選擇，但從成本等觀點，使用二氧化矽較理想。又，考慮熱傳導性等觀點，也可以使用氧化鋁、氮化鋁、 氧化鈦、氮化矽、氮化硼等。二氧化矽之形狀有破碎二氧化矽與球狀二氧化矽，但球狀二氧化矽為較佳。 The inorganic filler is not particularly limited, and examples thereof include silver, titanium oxide, cerium oxide, mica, and alumina, and a plurality of these may be contained. As described above, the inorganic filler can be selected from a variety of types, but from the viewpoint of cost and the like, it is preferred to use cerium oxide. Further, in view of thermal conductivity and the like, alumina, aluminum nitride, or the like may be used. Titanium oxide, tantalum nitride, boron nitride, and the like. The shape of cerium oxide is broken cerium oxide and spherical cerium oxide, but spherical cerium oxide is preferred.

前述無機填充材之平均粒徑不特別限定，宜為0.01μm以上、0.5μm以下較佳，0.05μm以上、0.3μm以下更理想。藉由為上述範圍，並進一步調整填充材種類、填充材之含量、樹脂清漆之調整條件、膜之樹脂組成物、成膜條件、及膜之膜厚等，能使接著膜之表面粗糙度成為理想範圍，能使接著膜之透明性更提高。又，能抑制接著膜之凝聚，使外觀性提高。 The average particle diameter of the inorganic filler is not particularly limited, but is preferably 0.01 μm or more and 0.5 μm or less, more preferably 0.05 μm or more and 0.3 μm or less. By setting the range of the filler, the content of the filler, the adjustment conditions of the resin varnish, the resin composition of the film, the film formation conditions, and the film thickness of the film, the surface roughness of the adhesive film can be adjusted to the above range. The ideal range can improve the transparency of the adhesive film. Moreover, aggregation of the adhesive film can be suppressed, and the appearance property can be improved.

前述填充材之含量，相對於前述樹脂組成物為10重量%以上70重量%以下，較佳為20重量%以上65重量%以下，更佳為30重量%以上60重量%以下，又更佳為30重量%以上50重量%以下。藉由為上述範圍，並進一步調整填充材之種類、填充材之平均粒徑、樹脂清漆之調整條件、膜之樹脂組成物、成膜條件、及膜之膜厚等，能使接著膜之表面粗糙度成為理想範圍，使接著膜之透明性更提高。又，能抑制接著膜之凝聚，使外觀性提高。又，藉由為上述範圍，硬化後之密封層與被黏附體之間之線膨脹係數差減小，能使熱衝擊時產生之應力減小，故能使與被黏附體間的密合更提高。再者，能抑制硬化後之密封層之彈性係數變得太高，防止填充材被一併捲入接合部，故能使半導體裝置之可靠性更提高。 The content of the filler is from 10% by weight to 70% by weight, preferably from 20% by weight to 65% by weight, more preferably from 30% by weight to 60% by weight, even more preferably from the resin composition. 30% by weight or more and 50% by weight or less. By the above range, the type of the filler, the average particle diameter of the filler, the adjustment conditions of the resin varnish, the resin composition of the film, the film formation conditions, and the film thickness of the film can be further adjusted to enable the surface of the film. The roughness is in a desired range, and the transparency of the adhesive film is further improved. Moreover, aggregation of the adhesive film can be suppressed, and the appearance property can be improved. Further, by being in the above range, the difference in linear expansion coefficient between the cured sealing layer and the adherend is reduced, so that the stress generated during thermal shock can be reduced, so that the adhesion to the adherend can be made more improve. Further, it is possible to suppress the elastic modulus of the sealing layer after curing from becoming too high, and to prevent the filler from being entangled in the joint portion together, so that the reliability of the semiconductor device can be further improved.

又，前述樹脂組成物中，除了前述各成分以外，也可以更摻合塑化劑、安定劑、黏著賦予劑、潤滑劑、抗氧化劑、抗靜電劑、低應力劑、塗平劑及顏料等。又，也可同時摻合熱硬化成分和潛在性硬化劑。作為潛在性硬化劑，可列舉二氰二醯胺型潛在性硬化劑、胺加成物型潛在性硬化劑、有機酸醯肼型潛在性硬化劑、芳香族鋶鹽型潛在性硬化劑、微膠囊型潛在性硬化劑、光硬化型潛 在性硬化劑，其中藉由含有胺加成物型潛在性硬化劑等，能取得前述接著膜之保存安定性與速硬化性之均衡性。 Further, in the resin composition, in addition to the above components, a plasticizer, a stabilizer, an adhesion-imparting agent, a lubricant, an antioxidant, an antistatic agent, a low-stress agent, a coating agent, a pigment, etc. may be further blended. . Further, it is also possible to blend a thermosetting component and a latent curing agent at the same time. Examples of the latent curing agent include a dicyandiamide type latent curing agent, an amine addition type latent curing agent, an organic acid type latent curing agent, an aromatic sulfonium type latent curing agent, and micro Capsule-type latent hardener, photo-curing potential In the curing agent, the balance between the storage stability and the quick-curing property of the adhesive film can be obtained by containing an amine-additive latent curing agent or the like.

前述接著膜例如可依以下製造方法製造。 The foregoing adhesive film can be produced, for example, by the following production method.

將構成前述接著膜之樹脂組成物溶於有機溶劑而得之清漆塗佈在基材等後，於既定溫度使其乾燥，能獲得基材層與接著膜之疊層體。前述基材只要可支持接著膜且於接著膜使用時能剝離者即可，不特別限定，例如可以使用聚酯片、或聚乙烯片、聚丙烯片、聚醯亞胺片、聚苯乙烯片、聚碳酸酯片等。又，為了使接著膜從基材理想地剝離，也可對於表面實施剝離處理。剝離處理可列舉於表面形成矽脫模劑之方法、或形成醇酸樹脂脫模劑之方法等，但不限於此等。 The varnish obtained by dissolving the resin composition constituting the adhesive film in an organic solvent is applied to a substrate or the like, and then dried at a predetermined temperature to obtain a laminate of the substrate layer and the adhesive film. The base material is not particularly limited as long as it can support the adhesive film and can be peeled off when the film is used. For example, a polyester sheet, a polyethylene sheet, a polypropylene sheet, a polyimide sheet, or a polystyrene sheet can be used. , polycarbonate sheets, etc. Further, in order to peel the adhesive film from the substrate ideally, the surface may be subjected to a peeling treatment. The release treatment may be, for example, a method of forming a ruthenium release agent on the surface or a method of forming an alkyd resin release agent, but is not limited thereto.

在此，基材之斷裂強度不特別限定，160MPa以上、300MPa以下較佳，180MPa以上、280MPa以下更理想。藉由為前述下限值以上，能防止接著膜之製造中或使用時非故意地斷裂，藉由為前述下限值以下，於製造中、使用時能理想地饋料，易操作、生產性提高。 Here, the breaking strength of the substrate is not particularly limited, and is preferably 160 MPa or more and 300 MPa or less, and more preferably 180 MPa or more and 280 MPa or less. When it is at least the above lower limit value, it is possible to prevent unintentional fracture during the production or use of the adhesive film, and it is possible to feed the material at the time of production or use, which is easy to handle and productivity. improve.

前述接著膜之表面粗糙度Ra為0.03μm以上1.0μm以下，更佳為0.05μm以上0.8μm以下，又更佳為0.1μm以上0.5μm以下。藉由為前述上限值以下，前述黏著劑具有充分透明性，藉由為前述下限值以上，當辨識電子零件之表面時，防止不規則反射，藉此，電子零件之第1端子之形狀、排列等的可見性提高。又，提高滑動性，前述接著膜之作業性提高。 The surface roughness Ra of the adhesive film is 0.03 μm or more and 1.0 μm or less, more preferably 0.05 μm or more and 0.8 μm or less, and still more preferably 0.1 μm or more and 0.5 μm or less. When the adhesive is sufficiently low in transparency, the adhesive is sufficiently transparent, and when the surface of the electronic component is recognized, irregular reflection is prevented, whereby the shape of the first terminal of the electronic component is obtained. The visibility of the arrangement, etc. is improved. Further, the slidability is improved, and the workability of the adhesive film is improved.

如此之接著膜之表面粗糙度Ra為算術平均粗糙度，不特別限定，可依據JISB0601測定。亦即，可針對測定距離1，設定X軸為測定方向，設定Y軸為高度方向，依市售表面粗糙度計測得之表面粗糙度曲線y=f(x)，使用以下數式1測定。 The surface roughness Ra of the film thus obtained is an arithmetic mean roughness, and is not particularly limited and can be measured in accordance with JIS B0601. In other words, for the measurement distance 1, the X-axis is set as the measurement direction, the Y-axis is set as the height direction, and the surface roughness curve y=f(x) measured by a commercially available surface roughness meter is measured using the following formula 1.

市售表面粗糙度計，可使用東京精密製表面粗糙度計SURFCOM1400D。 For the commercially available surface roughness meter, Tokyo Precision Surface Durometer SURFCOM1400D can be used.

前述接著膜於700nm之透光率為15%以上100%以下較佳，20%以上100%以下更佳，25%以上100%以下更理想。藉由為前述下限值以上，前述黏著劑有充分透明性，藉由為前述上限值以下，辨識電子零件之表面時防止亂反射，藉此，電子零件之第1端子之形狀、排列等的可見性提高。 The light transmittance of the adhesive film at 700 nm is preferably 15% or more and 100% or less, more preferably 20% or more and 100% or less, and still more preferably 25% or more and 100% or less. When the adhesive is sufficiently transparent, the adhesive is sufficiently transparent, and when the surface of the electronic component is identified as the upper limit or less, the reflection of the surface of the electronic component is prevented, thereby preventing the shape and arrangement of the first terminal of the electronic component. The visibility is improved.

如此之接著膜之透光率不特別限定，例如可依JISK7375等記載之透過率測定，使用市售分光透光率測定機測定。市售分光透光率測定機，可使用例如島津製作所製分光光度計UV-160等。在此，將於波長400nm~900nm使入射光入射測定之接著膜，從透過之平行光線之比例測定透光率，將其中於700nm之測定值定義為透光率。 The light transmittance of the film is not particularly limited. For example, it can be measured by a transmittance measured by JIS K7375 or the like using a commercially available spectroscopic transmittance measuring machine. For the commercially available spectrophotometer, for example, a spectrophotometer UV-160 manufactured by Shimadzu Corporation can be used. Here, the incident film is incident on the film to be measured at a wavelength of 400 nm to 900 nm, and the transmittance is measured from the ratio of the transmitted parallel rays, and the measured value at 700 nm is defined as the light transmittance.

令前述接著膜之表面粗糙度Ra為C、前述接著膜於700nm之透光率為D時，前述表面粗糙度Ra與前述透光率之比[C/D]為1.8×10-2μm/%以下較佳，1.1×10-2μm/%以下更佳，5.0×10-4μm/%以上1.0×10-2μm/%以下又更佳。藉由為前述上限值以下、或前述下限值以上，當辨識電子零件之表面時，防止膜表面之 亂反射及膜中之散射，藉此電子零件之第1端子之形狀、排列等的可見性提高。又，滑動性提高，前述接著膜之作業性提高。 When the surface roughness Ra of the adhesive film is C and the light transmittance of the adhesive film at 700 nm is D, the ratio [C/D] of the surface roughness Ra to the light transmittance is 1.8 × 10 -2 μm / % or less is more preferable, and 1.1 × 10 -2 μm / % or less is more preferable, and 5.0 × 10 -4 μm / % or more and 1.0 × 10 -2 μm / % or less is more preferable. When the surface of the electronic component is recognized below the upper limit value or the lower limit value, the surface of the electronic component is prevented from being scattered and scattered in the film, whereby the shape, arrangement, and the like of the first terminal of the electronic component are Visibility is improved. Further, the slidability is improved, and the workability of the adhesive film is improved.

前述接著膜之最低熔融黏度為50,000Pa．s以下較佳，20,000Pa．s以下更佳，10,000Pa．s以下則更理想。又，0.01Pa．s以上較佳，0.05Pa．s以上更佳，0.1Pa．s以上則更理想。藉由為前述上限值以下，接著膜之透濕性提高，可防止在密封材內部殘留空隙。又，藉由為前述下限值以上，可防止由於前述接著膜過於流動、接著膜從電子零件突出而造成污染工具等不良情形。 The minimum melt viscosity of the foregoing film is 50,000 Pa. s is better, 20,000Pa. s is better below, 10,000Pa. The following is more desirable. Also, 0.01Pa. More preferably s, 0.05Pa. More preferably s, 0.1Pa. More than s is more desirable. When the moisture permeability of the film is increased by the above upper limit value, it is possible to prevent voids from remaining inside the sealing material. Further, by being equal to or greater than the lower limit value, it is possible to prevent problems such as contamination of the tool due to excessive flow of the adhesive film and subsequent protrusion of the film from the electronic component.

如此之最低熔融黏度不特別限定，可使用市售之黏彈性測定裝置、流變儀等測定。其中，宜使用將接著膜夾於平行設置之圓形板之間，以一定條件施加轉矩以測定之旋轉式流變儀測定較佳。藉由使用如此之測定方法，可依據實際黏著電子零件與電路零件之步驟的條件來測定熔融黏度。本發明中，係將使用黏彈性測定裝置(Thermo Fisher Scientific Inc.製「MARS」)，平行板20mmφ、間隙0.05mm、頻率0.1Hz、升溫速度為10℃/分之條件測得之熔融黏度成最小之值定義為測定值。 Such a minimum melt viscosity is not particularly limited, and can be measured using a commercially available viscoelasticity measuring device, rheometer or the like. Among them, it is preferable to use a rotary rheometer which is preferably used by sandwiching a film between parallel circular plates and applying torque under certain conditions. By using such a measurement method, the melt viscosity can be measured in accordance with the conditions of the steps of actually adhering the electronic component to the circuit component. In the present invention, a viscoelasticity measuring device ("MARS" manufactured by Thermo Fisher Scientific Inc.) is used, and the melt viscosity measured by a condition of a parallel plate of 20 mmφ, a gap of 0.05 mm, a frequency of 0.1 Hz, and a temperature increase rate of 10 ° C /min is used. The minimum value is defined as the measured value.

前述樹脂組成物之Tg為80℃以上較佳，100℃以上更理想。藉由為前述理想範圍內，能使本發明之半導體裝置之可靠性更提高。又，就前述接著膜之平均線膨脹率而言，α1為100ppm以下較佳，75ppm以下更佳，50ppm以下則更理想。藉由為前述理想範圍內，能使本發明之半導體裝置之可靠性更提高。 The Tg of the resin composition is preferably 80 ° C or higher, more preferably 100 ° C or higher. The reliability of the semiconductor device of the present invention can be further improved by the above-described ideal range. Further, in the average linear expansion ratio of the film, α1 is preferably 100 ppm or less, more preferably 75 ppm or less, and still more preferably 50 ppm or less. The reliability of the semiconductor device of the present invention can be further improved by the above-described ideal range.

如此之Tg、α1，可將接著膜以假定的硬化條件，於例如180℃、2小時等硬化條件處理，並使用一般使用之TMA等測定。 Such Tg and α1 can be treated under a predetermined hardening condition, for example, at 180 ° C for 2 hours, and the like, and measured using TMA or the like which is generally used.

接著膜之厚度可依使用之電子零件之種類、電路零件之種類適當設定。尤其，依前述電子零件擁有之第1端子及連接部之設計適當設定較佳。例如：接著膜之厚度為100μm以下較佳，80μm以下更理想。又，3μm以上較佳，5μm以上更理想。 The thickness of the film can be appropriately set depending on the type of electronic component to be used and the type of circuit component. In particular, it is preferable to appropriately design the first terminal and the connection portion of the electronic component. For example, the thickness of the film is preferably 100 μm or less, more preferably 80 μm or less. Further, it is preferably 3 μm or more, and more preferably 5 μm or more.

<半導體裝置之製造方法> <Method of Manufacturing Semiconductor Device>

其次，說明使用本發明之接著膜10之半導體裝置100之製造方法。 Next, a method of manufacturing the semiconductor device 100 using the bonding film 10 of the present invention will be described.

[1]疊層步驟 [1] Lamination step

[1-1]貼附步驟 [1-1] Attachment steps

如圖3(a)所示，使接著膜10與半導體晶圓40密合，且同時將接著膜10與半導體晶圓40(多數電子零件20之集合體)予以疊層。在此，接著膜10係預先製成與半導體晶圓40為大約同尺寸。又，半導體晶圓40中，和接著膜10黏著的面具有凸狀的多數第1端子(未圖示)。以覆蓋半導體晶圓40之第1端子的方式，將接著膜10貼附於半導體晶圓40(圖3(a))。 As shown in FIG. 3(a), the adhesive film 10 is adhered to the semiconductor wafer 40, and the adhesive film 10 and the semiconductor wafer 40 (an assembly of a plurality of electronic components 20) are laminated. Here, the film 10 is formed in advance to be approximately the same size as the semiconductor wafer 40. Further, in the semiconductor wafer 40, a plurality of first terminals (not shown) having a convex shape are provided on the surface to which the adhesive film 10 is adhered. The adhesive film 10 is attached to the semiconductor wafer 40 so as to cover the first terminal of the semiconductor wafer 40 (Fig. 3(a)).

將接著膜10貼附於半導體晶圓40之方法，例如利用輥層合機、平板壓製機、晶圓層合機、彈性體壓製機等將接著膜10層合於半導體晶圓40之方法。該等之中，為了使層合時空氣不致捲入，宜為在真空下層合之方法(真空層合機)為較佳。 A method of attaching the adhesive film 10 to the semiconductor wafer 40, for example, a method of laminating the adhesive film 10 to the semiconductor wafer 40 by a roll laminator, a flat press, a wafer laminator, an elastomer press, or the like. Among these, in order to prevent air from being entangled during lamination, it is preferred to use a method of laminating under vacuum (vacuum laminator).

又，層合條件不特別限定，只要能無空隙地層合即可，具體而言於50~150℃加熱1秒~120秒之條件較佳，尤其於60~120℃加熱5~60秒之條件為較佳。層合條件若為前述範圍內，貼附性、及抑制樹脂突出之效果、及樹脂之硬化度之均衡性優異。又，加壓條件亦不特別限定，0.2~2.0MPa較佳，尤其0.5~1.5MPa為較佳。 Further, the lamination conditions are not particularly limited as long as they can be laminated without voids, specifically, heating at 50 to 150 ° C for 1 second to 120 seconds, particularly at 60 to 120 ° C for 5 to 60 seconds. It is better. When the lamination conditions are within the above range, the adhesion, the effect of suppressing the protrusion of the resin, and the balance of the degree of hardening of the resin are excellent. Further, the pressurization condition is not particularly limited, and is preferably 0.2 to 2.0 MPa, particularly preferably 0.5 to 1.5 MPa.

上述疊層之結果，如圖3(b)所示，可獲得接著膜10與半導體晶圓40疊層成的疊層體37。 As a result of the lamination, as shown in FIG. 3(b), a laminate 37 in which the bonding film 10 and the semiconductor wafer 40 are laminated can be obtained.

其次，如圖3(c)所示，在與半導體晶圓40之已黏著接著膜之面為相反側之面貼附切割片50。切割片50不特別限定，可以用包括支持膜與黏著劑層之一般使用者。在此，前述黏著劑層可以使用丙烯酸系黏著劑、橡膠系黏著劑等的樹脂組成物構成者，該等之中，丙烯酸系黏著劑為較佳。又，為了控制黏著性，也可以添加胺甲酸酯丙烯酸酯、丙烯酸酯單體等光反應性單體及寡聚物、及光聚合起始劑。又，前述支持膜不特別限定，於黏著劑層含有光反應性單體等的情形，宜具有放射線透射性較佳。支持膜，可使用例如聚乙烯、聚丙烯、乙烯．丙烯共聚物等。切割片50之貼附可以使用晶圓層合機等。此時，宜同時貼附晶圓環51，將半導體晶圓固定較佳。晶圓環51一般由不銹鋼鋼、鋁等各種金屬材料等構成，故剛性高，能確實防止疊層體變形。 Next, as shown in FIG. 3(c), the dicing sheet 50 is attached to the surface opposite to the surface of the semiconductor wafer 40 to which the adhesive film is adhered. The dicing sheet 50 is not particularly limited, and a general user including a support film and an adhesive layer can be used. Here, as the pressure-sensitive adhesive layer, a resin composition such as an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive can be used. Among them, an acrylic pressure-sensitive adhesive is preferable. Further, in order to control the adhesion, a photoreactive monomer such as a urethane acrylate or an acrylate monomer, an oligomer, and a photopolymerization initiator may be added. In addition, the support film is not particularly limited, and when the adhesive layer contains a photoreactive monomer or the like, it is preferred to have radiation transmittance. Support film, such as polyethylene, polypropylene, ethylene. Propylene copolymer and the like. A wafer laminator or the like can be used for attaching the dicing sheet 50. At this time, it is preferable to attach the wafer ring 51 at the same time, and it is preferable to fix the semiconductor wafer. The wafer ring 51 is generally made of various metal materials such as stainless steel or aluminum, and therefore has high rigidity and can reliably prevent deformation of the laminate.

[2]切割步驟 [2] Cutting step

然後，準備未圖示之切割台，在切割台上載置疊層體以使得切割台與切割片50接觸。 Then, a cutting table (not shown) is prepared, and the laminate is placed on the cutting table so that the cutting table comes into contact with the dicing sheet 50.

之後，如圖4(d)所示，使用切割刀片52在疊層體形成多數切口53(切割)。切割刀片52以圓盤狀之鑽石刀片等構成，藉由將其邊旋轉邊抵接於疊層體之半導體晶圓40側之面，可形成切口53。並且，沿著於半導體晶圓40形成之電路圖案彼此之間隙，使切割刀片52相對地移動，將半導體晶圓40分切為已分切之多數半導體晶片20。此時被分切之半導體晶片20各於外部具有用以電性地連接的端子21。又，接著膜10也同樣分切成多數黏著層。如此之切割進行時，對於半導體晶圓40施加振動或衝擊，但因為半導體晶圓40之底面由切割膠帶50支持，能夠緩和上述振動或衝擊。其結果能確實防止半導體晶圓40及半導體晶片20的裂痕或缺損等不良情形。 Thereafter, as shown in FIG. 4(d), a plurality of slits 53 (cut) are formed in the laminate using the dicing blade 52. The dicing blade 52 is formed of a disk-shaped diamond blade or the like, and a slit 53 can be formed by abutting against the surface of the semiconductor wafer 40 on the side of the laminate. Further, the dicing blades 52 are relatively moved along the gaps between the circuit patterns formed by the semiconductor wafer 40, and the semiconductor wafer 40 is slit into a plurality of semiconductor wafers 20 that have been slit. The semiconductor wafers 20 which are slit at this time each have terminals 21 for electrically connecting to the outside. Further, the film 10 is also cut into a plurality of adhesive layers in the same manner. When such cutting is performed, vibration or impact is applied to the semiconductor wafer 40, but since the bottom surface of the semiconductor wafer 40 is supported by the dicing tape 50, the above vibration or impact can be alleviated. As a result, it is possible to surely prevent problems such as cracks or defects of the semiconductor wafer 40 and the semiconductor wafer 20.

[3]拾取步驟 [3] Pickup step

[3-1]擴展步驟 [3-1] Extension steps

然後將已形成多數切口53之疊層體37利用未圖示之擴展裝置向放射狀延伸(擴展)。藉此，如圖4(e)所示，於疊層體形成之切口53之寬度擴大，伴隨著，分切的半導體晶片20彼此的間隔也擴大。其結果，被分切的半導體晶片20彼此無干擾之虞，容易拾取已分切的各半導體晶片20。又，擴展裝置之構成為在後述步驟仍能維持如此之擴展狀態。 Then, the laminate 37 in which the plurality of slits 53 are formed is radially extended (expanded) by an expansion device (not shown). As a result, as shown in FIG. 4(e), the width of the slit 53 formed in the laminate is enlarged, and the interval between the slit semiconductor wafers 20 is also enlarged. As a result, the divided semiconductor wafers 20 are easily interfered with each other, and the semiconductor wafers 20 that have been slit are easily picked up. Further, the expansion device is configured to maintain such an extended state in the steps described later.

[3-2]拾取步驟 [3-2] Picking step

然後使用未圖示之黏晶機、或晶粒選包器(die sorter)，將半導體晶片20中的1個以套爪(collet)(晶片吸附部)吸附且同時向上方拉起，可獲得附有接著膜10之半導體晶片20(拾取)。此時可使用將切割膠帶50從下方往上突的針狀體(needle)等(未圖示)。又，切割膠帶50會由於紫外線照射、加熱而使黏著性下降，故為提高拾取性時，也可以於拾取前實施紫外線之照射、加熱處理。 Then, one of the semiconductor wafers 20 is sucked by a collet (wafer adsorption portion) and pulled up at the same time by using a die bonder or a die sorter (not shown). A semiconductor wafer 20 (pick-up) attached to the film 10 is attached. In this case, a needle or the like (not shown) that protrudes from the lower side of the dicing tape 50 can be used. Further, since the dicing tape 50 is lowered in adhesion by ultraviolet irradiation or heating, it is also possible to perform ultraviolet ray irradiation and heat treatment before picking up in order to improve pick-up property.

[4]接合步驟 [4] Joining step

[4-1]黏著步驟 [4-1] Adhesive step

然後準備用以裝載(mount)已分切之半導體晶片(電子零件)20的中介片(電路零件)30。 Then, an interposer (circuit part) 30 for mounting the cut semiconductor wafer (electronic part) 20 is prepared.

此中介片30在與前述接著膜黏著之面具有端子(未圖示)。 The interposer 30 has terminals (not shown) on the surface to which the bonding film is adhered.

其次，如圖4(f)所示，將已拾取之半導體晶片20介隔接著膜而載置於中介片30上。此時，係將已分切之半導體晶片(電子零件)20之第1端子21與中介片(電路零件)30之第2端子31進行位置對準並同時介隔接著膜10予以暫時壓接。 Next, as shown in FIG. 4(f), the picked semiconductor wafer 20 is placed on the interposer 30 via the adhesive film. At this time, the first terminal 21 of the semiconductor wafer (electronic component) 20 that has been slit is aligned with the second terminal 31 of the interposer (circuit component) 30, and the film 10 is temporarily pressure-bonded via the adhesive film 10.

中介片30，如圖5(a)所示，係於基材32上設有配線電路33，且具有電極墊34作為端子。配線電路33，在電極墊34以外處設有絕緣部35。又，於絕緣部35，設有多數對準記號36作為位置對準用的圖案。 As shown in FIG. 5(a), the interposer 30 is provided with a wiring circuit 33 on the substrate 32 and an electrode pad 34 as a terminal. In the wiring circuit 33, an insulating portion 35 is provided outside the electrode pad 34. Further, a plurality of alignment marks 36 are provided in the insulating portion 35 as patterns for alignment.

又，中介片30，可將此對準記號36替換為使用例如如圖5(a)所示之電極墊34(凹部)等的中介片30之既定部位作為對準記號。 Further, in the interposer 30, the alignment mark 36 can be replaced with a predetermined portion of the interposer 30 using, for example, the electrode pad 34 (recessed portion) as shown in Fig. 5 (a) as an alignment mark.

圖5(b)例示已分切之半導體晶片(電子零件)20與接著膜10疊層而得之疊層體37之細節。已分切之半導體晶片20之第1端子21係於表面具有低熔點導電性金屬之金屬凸塊。又，已分切之半導體晶片20，設有多數對準記號22作為位置對準用的圖案。 Fig. 5(b) illustrates the details of the laminated body 37 obtained by laminating the semiconductor wafer (electronic component) 20 which has been slit and the film 10. The first terminal 21 of the semiconductor wafer 20 that has been slit is a metal bump having a low melting conductive metal on its surface. Further, the semiconductor wafer 20 which has been slit is provided with a plurality of alignment marks 22 as patterns for alignment.

又，已分切之半導體晶片20，也可將對準記號22替換為使用例如：圖5(b)所示之第1端子21(突起)等之已分切之半導體晶片20之既定部位作為對準記號。 Further, in the semiconductor wafer 20 which has been slit, the alignment mark 22 may be replaced with a predetermined portion of the semiconductor wafer 20 which has been slit, for example, the first terminal 21 (protrusion) shown in FIG. 5(b). Align the mark.

亦即，作為用於中介片(電路零件)30及已分切之半導體晶片(電子零件)20之位置對準之圖案，不限於此位置對準專用之對準記號36、22，其他也可列舉例如：端子、電極、凸塊、配線圖案(配線)、墊部(例如：接合墊、電極墊)、切割線等。 That is, the pattern for aligning the interposer (circuit component) 30 and the sliced semiconductor wafer (electronic component) 20 is not limited to the alignment marks 36 and 22 for which the alignment is dedicated, and others may be used. For example, a terminal, an electrode, a bump, a wiring pattern (wiring), a pad (for example, a bonding pad, an electrode pad), a cutting line, etc. are mentioned.

藉由使中介片30之對準記號36與已分切之半導體晶片20之對準記號22，從中介片30或已分切之半導體晶片20之厚度方向看去為一致，以進行已分切之半導體晶片20對於中介片30之位置對準。並且，將中介片30與已分切之半導體晶片20介隔接著膜10而暫時壓接，在中介片30上固定已分切之半導體晶片20(圖5(c))。暫時壓接之方法不特別限定，可以使用壓接機、覆晶晶片黏晶機等實施。暫時壓接之條件特別限定，溫度為40℃~200℃較佳，60℃~180℃尤佳。又，時間為0.1秒~60秒較佳，1~60秒尤佳。又，壓力為0.1MPa~2.0MPa較佳， 0.3MPa~1.5MPa尤佳。暫時壓接之條件若為前述範圍內，能將已分切之半導體晶片20確實地暫時壓接在中介片30上。 By aligning the alignment mark 36 of the interposer 30 with the aligned mark 22 of the sliced semiconductor wafer 20, it is uniform from the thickness direction of the interposer 30 or the sliced semiconductor wafer 20 to perform the slitting. The semiconductor wafer 20 is aligned with respect to the interposer 30. Then, the interposer 30 and the slit semiconductor wafer 20 are temporarily pressure-bonded to the film 10, and the semiconductor wafer 20 which has been slit is fixed to the interposer 30 (Fig. 5(c)). The method of temporarily crimping is not particularly limited, and it can be carried out using a crimping machine, a flip chip die bonder or the like. The conditions for the temporary crimping are particularly limited, and the temperature is preferably from 40 ° C to 200 ° C, and particularly preferably from 60 ° C to 180 ° C. Also, the time is preferably from 0.1 second to 60 seconds, and particularly preferably from 1 to 60 seconds. Moreover, the pressure is preferably 0.1 MPa to 2.0 MPa, 0.3MPa~1.5MPa is especially preferred. If the condition of the temporary crimping is within the above range, the slit semiconductor wafer 20 can be surely temporarily bonded to the interposer 30.

[4-2]接合步驟 [4-2] Joining step

然後將中介片30與半導體晶片20予以電性地接合。 The interposer 30 is then electrically bonded to the semiconductor wafer 20.

中介片30與半導體晶片20之電性接合，可藉由將第1端子21表面之低熔點之金屬組成物予以熔融而與電極墊34進行焊接，以形成電性地連接之連接部81以進行(圖5(d))。 The interposer 30 is electrically bonded to the semiconductor wafer 20, and is melted by the metal composition having a low melting point on the surface of the first terminal 21 to be soldered to the electrode pad 34 to form an electrically connected connecting portion 81 for performing. (Fig. 5(d)).

焊接條件依使用之低熔點之金屬組成物之種類不同，例如Sn-Ag之情形，於220~260℃加熱5~500秒而焊接較佳，尤其於230~240℃加熱10~100秒較佳。 The welding conditions vary depending on the type of metal composition having a low melting point. For example, in the case of Sn-Ag, it is preferably heated at 220 to 260 ° C for 5 to 500 seconds, preferably at 230 to 240 ° C for 10 to 100 seconds. .

此焊接係將低熔點之金屬組成物熔解後以接著膜10會硬化之條件實施較佳。亦即，焊接宜於使低熔點之金屬組成物熔解但接著膜10之硬化反應不大會進行之條件實施較佳。藉此，能使連接時之連接部81之形狀成為連接可靠性優異之安定形狀。 This soldering is preferably carried out by melting the metal composition having a low melting point and then adhering the film 10 to harden. That is, the welding is preferably carried out by melting the metal composition having a low melting point, but the conditions in which the hardening reaction of the film 10 is not performed are preferably carried out. Thereby, the shape of the connection portion 81 at the time of connection can be made into a stable shape excellent in connection reliability.

[4-3]硬化步驟 [4-3] Hardening step

然後使接著膜10加熱並硬化，形成密封層80。硬化條件不特別限定，溫度為130~220℃較佳，150~200℃尤佳。又，時間為30~500分鐘較佳，60~180分鐘尤佳。再者，也可以於加壓氣體環境下使接著膜10硬化。加壓方法不特別限定，可於烘箱中導入空氣、氮、氬氣等加壓流體以進行。前述壓力為0.1MPa10MPa較佳，0.5MPa~5MPa尤佳。若硬化條件為前述範圍內，能減小接著膜10中之空隙。 The adhesive film 10 is then heated and hardened to form a sealing layer 80. The curing conditions are not particularly limited, and the temperature is preferably 130 to 220 ° C, and particularly preferably 150 to 200 ° C. Also, the time is preferably 30 to 500 minutes, and preferably 60 to 180 minutes. Further, the adhesive film 10 may be cured in a pressurized gas atmosphere. The pressurization method is not particularly limited, and it can be carried out by introducing a pressurized fluid such as air, nitrogen or argon into the oven. The pressure is preferably 0.1 MPa and 10 MPa, and more preferably 0.5 MPa to 5 MPa. If the hardening conditions are within the above range, the voids in the adhesive film 10 can be reduced.

以此方式，可獲得中介片30與已分切之半導體晶片20利用接著膜之硬化物製得之密封層80黏著成的疊層體之硬化物38。 In this manner, the cured product 38 of the laminate in which the interposer 30 and the slitted semiconductor wafer 20 are adhered by the sealing layer 80 made of the cured film of the film can be obtained.

[5]凸塊形成步驟 [5] Bump forming step

然後於母板形成用以安裝半導體裝置100之凸塊70(圖5(e))。凸塊70只要是有導電性之金屬材料即可，不特別限定，宜為導電性與應力緩和性優異之焊料為較佳。又，凸塊70之形成方法不特別限定，可藉由利用助焊劑將焊球連接的方式形成。 A bump 70 for mounting the semiconductor device 100 is then formed on the mother board (Fig. 5(e)). The bump 70 is not particularly limited as long as it is a conductive metal material, and is preferably a solder having excellent conductivity and stress relaxation properties. Further, the method of forming the bumps 70 is not particularly limited, and it can be formed by connecting solder balls with a flux.

以此方式，可獲得本實施形態中如圖5(e)所示之半導體裝置100，其包含：將中介片30與已分切之半導體晶片20利用接著膜之硬化物製得之密封層80予以黏著成的疊層體之硬化物38；及凸塊70。 In this manner, the semiconductor device 100 shown in FIG. 5(e) in the present embodiment can be obtained, which includes the sealing layer 80 obtained by using the interposer 30 and the cut semiconductor wafer 20 with the cured film of the adhesive film. a cured product 38 of a laminate to be adhered; and a bump 70.

依以上方法，不須要另外準備底層填充劑或助焊劑等，能更提升製造半導體晶片20與中介片30予以電性地連接而成之半導體裝置100之效率。 According to the above method, it is not necessary to separately prepare an underfill or a flux, and the efficiency of manufacturing the semiconductor device 100 in which the semiconductor wafer 20 and the interposer 30 are electrically connected can be further improved.

又，本實施形態中，已依序說明了於半導體晶圓40貼附接著膜10並進一步貼附切割片50，但也可以使用預先使切割片50與接著膜10一體化成的切割片一體型接著膜，於此接著膜貼附半導體晶圓40之實施形態進行。又，切割片以外，也可以使用在矽晶圓之背面研磨步驟使用之背面研磨膠帶或背面研磨膠帶兼切割膠帶等半導體製造步驟使用之步驟用片疊層了接著膜10而得的一體型接著膜。 Further, in the present embodiment, the dicing sheet 10 is attached to the semiconductor wafer 40 and the dicing sheet 50 is further attached. However, a dicing sheet-integrated type in which the dicing sheet 50 and the adhesive film 10 are integrated in advance may be used. Next, the film is subjected to an embodiment in which the film is attached to the semiconductor wafer 40. Further, in addition to the dicing sheet, an integral type obtained by laminating the film 10 with a step of a semiconductor manufacturing step such as a back surface polishing tape or a back surface polishing tape and a dicing tape used in the back surface polishing step of the enamel wafer may be used. membrane.

又，本實施形態係將接著膜10貼附於半導體晶圓40，但不限於如此之製造方法，也可使用將接著膜10分切，並貼附在預先分切之半導體晶片，再將和接著膜10之貼有半導體晶片之面為相反側之面暫時壓接在中介片30，之後使其電性地連接的製造方法。 Further, in the present embodiment, the adhesive film 10 is attached to the semiconductor wafer 40. However, the bonding film 10 is not limited to such a manufacturing method, and the bonding film 10 may be slit and attached to a semiconductor wafer which is previously slit, and then combined. Next, a method in which the surface of the film 10 on which the surface of the semiconductor wafer is bonded is temporarily pressed against the interposer 30, and then electrically connected.

又，本實施形態中，係將已分切之半導體晶片20接合於中介片30，但不限於如此之製造方法，也可使用將已分切之多數半導體晶片接合在多個其他的半導體晶圓，製成在半導體晶圓上具有多數半導體晶片與多數接著膜之疊層體，將此半導體晶圓切割並分切，將已分切之疊層體進一步連接於中介片等而製造半導體裝置的製造方法。 Further, in the present embodiment, the semiconductor wafer 20 which has been slit is bonded to the interposer 30, but it is not limited to such a manufacturing method, and a plurality of semiconductor wafers which have been slit may be bonded to a plurality of other semiconductor wafers. A laminate having a plurality of semiconductor wafers and a plurality of bonding films on a semiconductor wafer is formed, and the semiconductor wafer is cut and slit, and the slit laminate is further connected to an interposer or the like to fabricate a semiconductor device. Production method.

<切割膠帶一體型接著膜> <Cutting tape integrated type film>

然後針對本發明之切割膠帶一體型接著膜說明。 The dicing tape-integrated film of the present invention is then described.

本發明之切割膠帶一體型接著膜，特徵為具有上述本發明之接著膜及切割膠帶。 The dicing tape-integrated film of the present invention is characterized by having the above-described adhesive film and dicing tape of the present invention.

圖6顯示本發明之切割膠帶一體型接著膜之一形態。圖6中，切割膠帶一體型接著膜210具有在切割膠帶213上形成了接著膜211的結構。圖6所示之形態中，切割膠帶213係由切割膠帶之基材層213a、與切割膠帶之黏著層213b之2層構成，以切割膠帶之黏著層213b與接著膜211接觸的方式疊層。 Fig. 6 shows a form of the dicing tape-integrated film of the present invention. In FIG. 6, the dicing tape-integrated film 210 has a structure in which a film 211 is formed on the dicing tape 213. In the embodiment shown in Fig. 6, the dicing tape 213 is composed of two layers of a base material layer 213a of a dicing tape and an adhesive layer 213b of a dicing tape, and is laminated so that the adhesive layer 213b of the dicing tape comes into contact with the adhesive film 211.

本發明之切割膠帶一體型接著膜之形態不限於圖6所示者，例如也可為於切割膠帶之黏著層213b與接著膜211之間具有插入層的形態。於此情形，切割膠帶之黏著層宜具有比插入層更高黏著性較佳。藉此，相較於插入層對於接著膜211之密合力，切割膠帶之黏著層對於插入層及基材層之密合力更大。故於電子零件之製造步驟中，例如：如半導體晶片拾取步驟之電子零件之製造步驟中，能於應使其剝離之所望界面(亦即插入層與接著膜之界面)發生剝離。 The form of the dicing tape-integrated film of the present invention is not limited to those shown in Fig. 6. For example, the dicing tape may have an insertion layer between the adhesive layer 213b and the adhesive film 211. In this case, the adhesive layer of the dicing tape preferably has a higher adhesiveness than the insert layer. Thereby, the adhesion of the adhesive layer of the dicing tape to the insertion layer and the substrate layer is greater than the adhesion of the insertion layer to the adhesive film 211. Therefore, in the manufacturing step of the electronic component, for example, in the manufacturing step of the electronic component in the semiconductor wafer picking step, the desired interface (that is, the interface between the interposer and the adhesive film) which is to be peeled off can be peeled off.

<切割膠帶> <cutting tape>

本發明之切割膠帶一體型接著膜使用之切割膠帶，也可使用一般使用的任意切割膠帶。 The dicing tape used in the dicing tape-integrated film of the present invention may be any dicing tape which is generally used.

作為切割膠帶之基材層213a之構成材料不特別限定，例如：聚乙烯、聚丙烯、聚丁烯、聚丁二烯、聚甲基戊烯、聚氯乙烯、氯乙烯共聚物、聚對苯二甲酸乙二醇酯、聚對苯二甲酸丁二醇酯、聚胺甲酸酯、乙烯乙酸乙烯酯共聚物、離子聚合物、乙烯．(甲基)丙烯酸共聚物、乙烯．(甲基)丙烯酸酯共聚物、聚苯乙烯、乙烯基聚異戊二烯、聚碳酸酯、聚烯烴等，可使用該等中之1種或2種以上之混合物。 The constituent material of the base material layer 213a as the dicing tape is not particularly limited, and examples thereof include polyethylene, polypropylene, polybutene, polybutadiene, polymethylpentene, polyvinyl chloride, vinyl chloride copolymer, and polyparaphenylene. Ethylene glycol dicarboxylate, polybutylene terephthalate, polyurethane, ethylene vinyl acetate copolymer, ionic polymer, ethylene. (Meth)acrylic copolymer, ethylene. A (meth) acrylate copolymer, a polystyrene, a vinyl polyisoprene, a polycarbonate, a polyolefin, etc. can use one or a mixture of two or more of these.

切割膠帶之基材層213a之平均厚度不特別限定，5μm~200μm較佳，約30μm~150μm更理想。藉此：基材層具有適度剛性，故能將接著膜確實地支持，容易操作割膠帶一體型接著膜，且藉由將切割膠帶一體型接著膜適度彎曲，能提高接著膜與具電極之被黏附體間之密合性。 The average thickness of the base material layer 213a of the dicing tape is not particularly limited, and is preferably 5 μm to 200 μm, more preferably about 30 μm to 150 μm. Thereby, the base material layer has moderate rigidity, so that the adhesive film can be reliably supported, the tape-cut-integrated adhesive film can be easily handled, and the adhesive film and the electrode can be improved by appropriately bending the dicing tape-integrated film. Adhesion between the adherends.

切割膠帶之基材層213a之製法不特別限定，可使用輪壓法、擠製成形法等一般的成形方法。基材層213a之表面，宜有與構成黏著層213b之材料反應之官能基，例如：羥基或胺基等露出較佳。又，為了提高基材層213a與黏著層213b之密合性，宜對於基材層213a之表面事先進行電暈處理或增黏塗佈等表面處理較佳。 The method for producing the base material layer 213a of the dicing tape is not particularly limited, and a general molding method such as a wheel pressing method or a extrusion forming method can be used. The surface of the base material layer 213a preferably has a functional group reactive with a material constituting the adhesive layer 213b, and for example, a hydroxyl group or an amine group is preferably exposed. Further, in order to improve the adhesion between the base material layer 213a and the adhesive layer 213b, it is preferred that the surface of the base material layer 213a is subjected to surface treatment such as corona treatment or tackifying coating in advance.

又，切割膠帶之黏著層213b之構成材料不特別限定，例如可使用包括丙烯酸系黏著劑、橡膠系黏著劑等之樹脂組成物構成者。 Further, the constituent material of the adhesive layer 213b of the dicing tape is not particularly limited, and for example, a resin composition including an acrylic adhesive or a rubber-based adhesive can be used.

丙烯酸系黏著劑，可使用例如(甲基)丙烯酸及此等之酯所構成之樹脂、(甲基)丙烯酸及此等之酯、及能與此等共聚合之不飽和單體(例如乙酸乙烯基、苯乙烯、丙烯腈等)之共聚物等。又，該等共聚物也可混合2種以上。 As the acrylic adhesive, for example, a resin composed of (meth)acrylic acid and such an ester, (meth)acrylic acid and such an ester, and an unsaturated monomer copolymerizable therewith (for example, vinyl acetate) can be used. a copolymer of a base, styrene, acrylonitrile, or the like. Further, these copolymers may be mixed in two or more kinds.

該等之中，宜為選自於由(甲基)丙烯酸甲酯、(甲基)丙烯酸乙基己酯、及、(甲基)丙烯酸丁酯構成之群組中之1種以上、與選自於由(甲基)丙烯酸羥基乙酯、及乙酸乙烯酯中之1種以上之共聚物為較佳。藉此，容易控制與切割膠帶之黏著層所黏著之對象(例如：上述插入層、基材層等)之密合性或黏著性。 Among these, it is preferably one or more selected from the group consisting of methyl (meth)acrylate, ethylhexyl (meth)acrylate, and butyl (meth)acrylate. It is preferred to use one or more copolymers of hydroxyethyl (meth)acrylate and vinyl acetate. Thereby, it is easy to control the adhesion or adhesiveness with the object adhered to the adhesive layer of the dicing tape (for example, the above-mentioned insertion layer, base material layer, etc.).

上述切割膠帶之黏著層213b之平均厚度不特別限定，約1μm~100μm較佳，尤其約3μm~20μm更理想。切割膠帶之黏著層213b之平均厚度若為上述範圍內，能確保切割膠帶之黏著層213b之形狀追隨性，能更提高對於半導體晶圓等接著膜之被接物之密合性。 The average thickness of the adhesive layer 213b of the dicing tape is not particularly limited, and is preferably from about 1 μm to 100 μm, more preferably from about 3 μm to 20 μm. When the average thickness of the adhesive layer 213b of the dicing tape is within the above range, the shape followability of the adhesive layer 213b of the dicing tape can be ensured, and the adhesion to the adherend of the film such as a semiconductor wafer can be further improved.

上述切割膠帶之製造方法不特別限定，例如可利用桿塗法、模塗法、照相凹版塗佈法等在切割膠帶之基材層213a上塗佈黏著層213b以製造。又，也可將黏著層213b另外塗佈在黏著層213b用基材上後，利用層合在切割膠帶之基材層213a上等方法予以轉印而製造。 The method for producing the above-mentioned dicing tape is not particularly limited, and for example, it can be produced by applying an adhesive layer 213b to the base material layer 213a of the dicing tape by a bar coating method, a die coating method, a gravure coating method, or the like. Further, the adhesive layer 213b may be separately applied onto the substrate for the adhesive layer 213b, and then transferred by lamination on the base material layer 213a of the dicing tape or the like.

設置插入層時，可於上述黏著層213b上進一步塗佈插入層，也可層合插入層另外塗佈在插入層用基材上者等方法製造。 When the intercalation layer is provided, the intercalation layer may be further applied to the adhesion layer 213b, or the intercalation insertion layer may be separately applied to the substrate for intercalation layers.

又，本發明之切割膠帶一體型接著膜，例如可藉由將基材層213a、黏著層213b、及具有插入層之切割膠帶、及本發明之接著膜，以上述插入層與接著膜接觸的方式層合以獲得。 Further, the dicing tape-integrated film of the present invention can be contacted with the adhesive film by, for example, the base material layer 213a, the adhesive layer 213b, the dicing tape having the insertion layer, and the adhesive film of the present invention. Ways to laminate to obtain.

<背面研磨膠帶一體型接著膜> <Back grinding tape integrated type film>

然後針對本發明之背面研磨膠帶一體型接著膜說明。本發明之背面研磨膠帶一體型接著膜之特徵為：具有上述本發明之接著膜及背面研磨膠帶。 Next, the back grinding tape integrated type film of the present invention will be described. The back-grinding tape-integrated film of the present invention is characterized by comprising the above-described adhesive film and back-grinding tape of the present invention.

上述背面研磨膠帶不特別限定，可列舉於基材之單面形成黏著劑層者。前述基材不特別限定，例如：聚對苯二甲酸乙二醇酯(PET)、聚乙烯(PE)、聚丙烯(PP)、乙烯．乙酸乙烯酯共聚物(EVA)等樹脂構成者。 The back surface polishing tape is not particularly limited, and examples thereof include those in which an adhesive layer is formed on one surface of a substrate. The aforementioned substrate is not particularly limited, for example, polyethylene terephthalate (PET), polyethylene (PE), polypropylene (PP), ethylene. A resin composition such as a vinyl acetate copolymer (EVA).

形成前述黏著劑層之黏著劑不特別限定，宜為包括含有聚合性寡聚物且藉由將其聚合交聯會使黏著力下降之黏著劑較佳。如此之黏著劑，例如：含有分子內具有放射線聚合性不飽和鍵而成之丙烯酸烷酯系及/或甲基丙烯酸烷酯系之聚合性聚合物、與放射線聚合性之多官能寡聚物或單體作為主成分而成之光硬化型黏著劑等。 The adhesive for forming the above-mentioned pressure-sensitive adhesive layer is not particularly limited, and it is preferred to include an adhesive which contains a polymerizable oligomer and which is polymerized and crosslinked to lower the adhesive force. Such an adhesive agent is, for example, an alkyl acrylate-based and/or alkyl methacrylate-based polymerizable polymer having a radiation-polymerizable unsaturated bond in the molecule, and a radiation-polymerizable polyfunctional oligomer or A photocurable adhesive obtained by using a monomer as a main component.

前述聚合性聚合物，可藉由例如預先合成於分子內帶有官能基之(甲基)丙烯酸系聚合物，與分子內具有會與前述官能基反應之官能基及放射線聚合性不飽和鍵之化合物反應而得。又，本說明書中，(甲基)丙烯酸系聚合物係指丙烯酸系聚合物及甲基丙烯酸系聚合物。 The polymerizable polymer can be synthesized, for example, by a (meth)acrylic polymer having a functional group in the molecule, and having a functional group reactive with the above functional group and a radiation polymerizable unsaturated bond in the molecule. The compound is obtained by reaction. In the present specification, the (meth)acrylic polymer means an acrylic polymer and a methacrylic polymer.

前述光硬化型黏著劑，除了前述聚合性聚合物及前述多官能寡聚物或單體以外宜更摻合光聚合起始劑較佳。藉此，利用照射紫外線等活性光線能確實地使黏著劑層與接著膜層之界面之密合力下降，故能使接著膜層不殘留黏著劑層之殘渣，而確實地剝離背面研磨膠帶。 It is preferable that the photocurable adhesive is further blended with a photopolymerization initiator in addition to the above polymerizable polymer and the above polyfunctional oligomer or monomer. Thereby, the active light of the ultraviolet ray or the like can surely reduce the adhesion between the adhesive layer and the interface of the adhesive layer, so that the adhesive layer can be reliably peeled off without leaving the residue of the adhesive layer.

上述背面研磨膠帶之製造方法不特別限定，例如可利用桿塗法、模塗法、照相凹版塗佈法等在背面研磨膠帶之基材層上塗佈黏著劑層以製造。又，也可利用將黏著劑層另外塗佈在黏著劑層形成用基材上後，層合於背面研磨膠帶之基材層上等方法予以轉印而製造。 The method for producing the back-grinding tape is not particularly limited, and for example, it can be produced by applying an adhesive layer to a base material layer of a back-grinding tape by a bar coating method, a die coating method, a gravure coating method, or the like. Further, it may be produced by separately applying an adhesive layer to a base material for forming an adhesive layer, and then transferring it to a base material layer of a back grinding tape.

藉由以此方式在製作之背面研磨膠帶層合上述接著膜，能製作背面研磨膠帶一體型接著膜。 By laminating the above-mentioned adhesive film on the back surface of the produced backing tape in this manner, a back-grinding tape-integrated film can be produced.

<背面研磨膠帶兼切割膠帶一體型接著膜> <Back grinding tape and cutting tape integrated type film>

然後針對本發明之背面研磨膠帶兼切割膠帶一體型接著膜說明。 Then, the back grinding tape and the dicing tape integrated type film of the present invention will be described.

本發明之背面研磨膠帶兼切割膠帶一體型接著膜300，如圖7所示，由背面研磨膠帶兼切割膠帶301、及接著膜302構成。未圖示但在背面研磨膠帶兼切割膠帶301與接著膜302之間也可設置脫模膜。藉此，容易將背面研磨膠帶兼切割膠帶301與接著膜302之間剝離，能提高切割半導體晶圓後之半導體元件之拾取性。 The back-grinding tape and dicing tape-integrated film 300 of the present invention is composed of a back-grinding tape-cut tape 301 and an adhesive film 302 as shown in FIG. Although not shown, a release film may be provided between the back grinding tape and the dicing tape 301 and the adhesive film 302. Thereby, it is easy to peel off between the back-grinding tape and the dicing tape 301 and the adhesive film 302, and the pick-up property of the semiconductor element after cutting a semiconductor wafer can be improved.

又，背面研磨膠帶兼切割膠帶301，只要是利用例如聚乙烯、聚丙烯等聚烯烴、乙烯乙酸乙烯酯共聚物、聚酯、聚醯亞胺、聚對苯二甲酸乙二醇酯、聚氯化乙烯、聚醯胺、聚胺甲酸酯等製得之耐熱性或耐藥品性優良之膜則可使用。背面研磨膠帶兼切割膠帶1之厚度不特別限定，通常30μm~500μm為較佳。 Further, the back-grinding tape and the dicing tape 301 are made of, for example, polyolefin such as polyethylene or polypropylene, ethylene vinyl acetate copolymer, polyester, polyimide, polyethylene terephthalate, or polychloroethylene. A film excellent in heat resistance or chemical resistance prepared by using ethylene, polyamide, or a polyurethane can be used. The thickness of the back grinding tape and the dicing tape 1 is not particularly limited, and is usually preferably 30 μm to 500 μm.

然後簡單說明本發明之背面研磨膠帶兼切割膠帶一體型接著膜300之製造方法。 Next, a method of manufacturing the back-grinding tape and dicing tape-integrated film 300 of the present invention will be briefly described.

接著膜302係依前述<接著膜>所述方法製作。將其切半，獲得圓形之接著膜302。 Next, the film 302 was produced in the same manner as described in the above <Adhesion Film>. This was cut in half to obtain a circular film 302.

然後，於其上疊層背面研磨膠帶兼切割膠帶301，可獲得以背面研磨膠帶兼切割膠帶301、接著膜302、剝離基材321構成之附有背面研磨膠帶機能及附有切割膠帶機能之接著膜300(圖8)。 Then, the back-grinding tape and the dicing tape 301 are laminated thereon, and the back-grinding tape and the dicing tape 301, the film 302, and the release substrate 321 are provided with the function of the back-grinding tape and the function of the dicing tape. Film 300 (Fig. 8).

依此方式形成之背面研磨膠帶兼切割膠帶一體型接著膜300之接著膜302之厚度不特別限定，為3μm以上、100μm以下較佳，尤其5μm以上、50μm以下又更佳。厚度若未達前述下限值，作為背面研磨膠帶兼切割膠帶一體型接著膜300之效果有時會下降，若超過前述上限值，製品之製造有時困難、厚度精度下降。 The thickness of the backing film 302 of the back surface polishing tape and the dicing tape integrated film 300 formed in this manner is not particularly limited, and is preferably 3 μm or more and 100 μm or less, and more preferably 5 μm or more and 50 μm or less. When the thickness is less than the above lower limit, the effect of the back-grinding tape and the dicing tape-integrated film 300 may be lowered. When the thickness exceeds the above upper limit, the production of the product may be difficult and the thickness accuracy may be lowered.

(半導體裝置之製造方法及半導體裝置) (Method of Manufacturing Semiconductor Device and Semiconductor Device)

然後針對半導體裝置之製造方法說明。 Then, the manufacturing method of the semiconductor device will be described.

將上述方法獲得之背面研磨膠帶兼切割膠帶一體型接著膜300之剝離基材321予以剝離，以接著膜302與半導體晶圓303之機能面331抵接的方式黏著(圖9)。 The backing polishing tape and the dicing tape-integrated film obtained from the above-described method are peeled off from the release substrate 321 of the film 300, and the film 302 is adhered to the surface 331 of the semiconductor wafer 303 (FIG. 9).

然後將背面研磨膠帶兼切割膠帶301之上側之面(圖10中之上側)固定在研磨裝置之研磨台座304。研磨裝置不特別限定，可以使用市售品。在此，背面研磨後之半導體晶圓303之厚度不特別限定，為約10μm~300μm較佳，更佳為10μm以上100μm以下。 Then, the back surface of the back grinding tape and the dicing tape 301 (the upper side in FIG. 10) is fixed to the polishing pedestal 304 of the polishing apparatus. The polishing apparatus is not particularly limited, and a commercially available product can be used. Here, the thickness of the semiconductor wafer 303 after the back surface polishing is not particularly limited, but is preferably about 10 μm to 300 μm, more preferably 10 μm or more and 100 μm or less.

然後將背面研磨後之半導體用晶圓303以背面研磨膠帶兼切割膠帶301接觸切割台305之頂面(圖11中之上側)的方式設置在切割台305(圖11)。然後，在半導體晶圓303之周圍設置晶圓環306，將半導體晶圓303固定。並且，以刀片307切斷半導體晶圓303，將半導體晶圓303分切而獲得具有接著膜302之半導體元件。此時，背面研磨膠帶兼切割膠帶一體型接著膜300具有緩衝作用，防止切斷半導體晶圓303時發生半導體元件裂痕、缺損等。又，也可在背面研磨膠帶兼切割膠帶一體型接著膜300預先黏貼半導體晶圓303及晶圓環306後再設置於切割台305。 Then, the semiconductor wafer 303 after the back surface polishing is placed on the cutting table 305 (FIG. 11) so that the back surface polishing tape and the dicing tape 301 contact the top surface (the upper side in FIG. 11) of the cutting table 305. Then, a wafer ring 306 is provided around the semiconductor wafer 303 to fix the semiconductor wafer 303. Then, the semiconductor wafer 303 is cut by the blade 307, and the semiconductor wafer 303 is slit to obtain a semiconductor element having the bonding film 302. At this time, the back-grinding tape and the dicing tape-integrated film 300 have a buffering function to prevent cracks, defects, and the like of the semiconductor element from occurring when the semiconductor wafer 303 is cut. Further, the back surface polishing tape and the dicing tape-integrated film 300 may be attached to the dicing table 305 after the semiconductor wafer 303 and the wafer ring 306 are pasted.

然後，將背面研磨膠帶兼切割膠帶一體型接著膜300以擴展裝置伸展，使具有分切之接著膜302的半導體元件彼此隔開一定間隔，之後拾取並裝載於基板，獲得半導體裝置。 Then, the back grinding tape and the dicing tape-integrated film 300 are stretched by the expanding device, and the semiconductor elements having the slit film 302 are spaced apart from each other with a certain interval, and then picked up and loaded on the substrate to obtain a semiconductor device.

如上，本發明之背面研磨膠帶兼切割膠帶一體型接著膜具有背面研磨膠帶機能、切割膠帶機能而且接著膜具有助焊劑活性，故有能省去助焊劑塗佈步驟等的作用。所以，無須助焊劑洗滌步驟，能使生產性優異且提高半導體晶圓之作業性。 As described above, the back-grinding tape and dicing tape-integrated film of the present invention has the functions of a back-grinding tape function and a dicing tape function, and the film has flux activity, so that the flux coating step and the like can be omitted. Therefore, the flux washing step is not required, and the productivity is excellent and the workability of the semiconductor wafer is improved.

【實施例】 [Examples]

以下依據實施例及比較例詳細說明本發明，但本發明不限於此。 Hereinafter, the present invention will be described in detail based on examples and comparative examples, but the present invention is not limited thereto.

[接著膜之製作] [Next film production]

(實施例1) (Example 1)

<接著膜之製作> <Next film production>

將甲酚酚醛清漆樹脂(DIC公司製KA-1160)14.26重量份、雙酚F型環氧樹脂(DIC公司製EXA-830LVP)39.73重量份、具有助焊劑活性之化合物即偏苯三甲酸(東京化成工業公司製)10.50重量份、作為成膜性樹脂之苯氧基樹脂(三菱化學公司製YX-6954)5.07重量份、作為硬化促進劑之2-苯基-4-甲基咪唑(四國化成工業公司製2P4MZ)0.09重量份、作為矽烷偶聯劑之3-環氧丙氧基丙基三甲氧基矽烷(信越化學工業公司製KBM-403)0.35重量份、二氧化矽填料(Admatechs公司製SC1050平均粒徑0.25μm)30.00重量份，溶解、分散於甲乙酮，製成樹脂濃度50%之樹脂清漆。 14.26 parts by weight of cresol novolak resin (KA-1160, manufactured by DIC Corporation), 39.73 parts by weight of bisphenol F-type epoxy resin (EXA-830LVP manufactured by DIC Corporation), and trimellitic acid (Tokyobenzene) which is a compound having flux activity (Tokyo) 10.50 parts by weight of phenoxy resin (YX-6954, manufactured by Mitsubishi Chemical Corporation) as a film-forming resin, and 5.07 parts by weight of 2-phenyl-4-methylimidazole as a hardening accelerator (four countries) 0.05 parts by weight of 2P4MZ) manufactured by Chemical Industry Co., Ltd., 3-glycidoxypropyltrimethoxydecane (KBM-403, manufactured by Shin-Etsu Chemical Co., Ltd.) as a decane coupling agent, 0.35 parts by weight, ruthenium dioxide filler (Admatechs Co., Ltd.) The SC1050 average particle diameter of 0.25 μm was 30.00 parts by weight, dissolved and dispersed in methyl ethyl ketone to prepare a resin varnish having a resin concentration of 50%.

將獲得之接著膜用清漆塗佈於基材聚酯膜(基體膜、帝人杜邦薄膜(股)公司製商品名：Purex A53)使厚度成為50μm，於100℃進行5分鐘乾燥，獲得厚度25μm之接著膜(以下稱為膜A)。 The obtained film was applied to a base polyester film (base film, manufactured by Teijin DuPont Film Co., Ltd., trade name: Purex A53) to a thickness of 50 μm, and dried at 100 ° C for 5 minutes to obtain a thickness of 25 μm. Next, a film (hereinafter referred to as film A).

(實施例2) (Example 2)

<接著膜之製作> <Next film production>

將聯苯芳烷基型苯酚樹脂(明和化成(股)公司製MEH-7851)25.15重量份、雙酚F型環氧樹脂(DIC公司製EXA-830LVP)32.10重量份、具有助焊劑活性之化合物即偏苯三甲酸(東京化成工業公司製)8.60重量份、作為成膜性樹脂之苯氧基樹脂(三菱化學公司製YX-6954)3.90重量份、作為硬化促進劑之2-苯基-4-甲基咪唑(四國化成工業公司製2P4MZ)0.05重量份、作為矽烷偶聯劑之3-環氧丙氧基丙基三甲氧基矽烷(信越化學工業公司製KBM-403)0.20重量份、二氧化矽填料(日本AEROSIL(股)公司製AEROSIL 200)5.00重量份及二氧化矽填料((股)公司Admatechs製YA050C平均粒徑0.05μm)25.00重量份，溶解、分散於甲乙酮，製成樹脂濃度50%之樹脂清漆。 25.15 parts by weight of a biphenyl aralkyl type phenol resin (MEH-7851 manufactured by Mingwa Kasei Co., Ltd.), 32.10 parts by weight of a bisphenol F type epoxy resin (EXA-830LVP manufactured by DIC Corporation), and a compound having flux activity 3,0 parts by weight of trimellitic acid (manufactured by Tokyo Chemical Industry Co., Ltd.), 3.00 parts by weight of a phenoxy resin (YX-6954, manufactured by Mitsubishi Chemical Corporation) as a film-forming resin, and 2-phenyl-4 as a curing accelerator. 0.05 parts by weight of methylimidazole (2P4MZ manufactured by Shikoku Chemicals Co., Ltd.), 0.20 parts by weight of 3-glycidoxypropyltrimethoxydecane (KBM-403, manufactured by Shin-Etsu Chemical Co., Ltd.) as a decane coupling agent, 5.00 parts by weight of cerium oxide filler (AEROSIL 200 manufactured by AEROSIL Co., Ltd.) and 25.00 parts by weight of cerium oxide filler (average particle size of YA050C manufactured by Admatechs Co., Ltd.), dissolved and dispersed in methyl ethyl ketone to form a resin Resin varnish at a concentration of 50%.

將獲得之接著膜用清漆塗佈於基材聚酯膜(基體膜、帝人杜邦薄膜(股)公司製商品名：Purex A53)使厚度成為50μm，於100℃乾燥5分鐘，獲得厚度25μm之接著膜(以下稱為膜B)。 The obtained film was applied to a base polyester film (base film, manufactured by Teijin DuPont Film Co., Ltd., trade name: Purex A53) to a thickness of 50 μm, and dried at 100 ° C for 5 minutes to obtain a thickness of 25 μm. Membrane (hereinafter referred to as film B).

(實施例3) (Example 3)

<接著膜之製作> <Next film production>

將苯酚芳烷基樹脂(三井化學公司製XLC-4L)10.20重量份、雙酚A型環氧樹脂(DIC公司製EPICLON 840-S)22.00重量份、具有助焊劑活性之化合物即還原酚酞(東京化成工業公司製)8.20重量份、作為成膜性樹脂之含環氧基之丙烯酸酯共聚物(NagaseChemtex公司製SG-P3)9.30重量份、作為硬化促進劑之2-甲基咪唑(四國化成工業公司製2MZ-H)0.05重量份、作為矽烷偶聯劑之3-甲基丙烯醯氧丙基三乙氧基矽烷(信越化學工業公司製KBE-503)0.25重量份、及二氧化矽填料 (Admatechs公司製SC1050平均粒徑0.25μm)50.00重量份，溶解、分散於甲乙酮，製成樹脂濃度50%之樹脂清漆。 10.20 parts by weight of phenol aralkyl resin (XLC-4L manufactured by Mitsui Chemicals Co., Ltd.), 22.00 parts by weight of bisphenol A type epoxy resin (EPICLON 840-S manufactured by DIC Corporation), and a compound having flux activity, that is, reduced phenolphthalein (Tokyo) 8.20 parts by weight of an epoxy group-containing acrylate copolymer (SG-P3 manufactured by Nagase Chemtex Co., Ltd.) as a film-forming resin, and 9.00 parts by weight of a 2-methylimidazole as a curing accelerator. Industrial Co., Ltd. 2MZ-H) 0.05 parts by weight, 0.25 parts by weight of 3-methylpropenyloxypropyltriethoxydecane (KBE-503 manufactured by Shin-Etsu Chemical Co., Ltd.) as a decane coupling agent, and ruthenium dioxide filler 50.00 parts by weight (average particle diameter: 0.25 μm, manufactured by Admatech Co., Ltd.) was dissolved and dispersed in methyl ethyl ketone to obtain a resin varnish having a resin concentration of 50%.

將獲得之接著膜用清漆塗佈於基材聚酯膜(基體膜、帝人杜邦薄膜(股)公司製商品名：Purex A53)使厚度成為50μm，於100℃乾燥5分鐘，獲得厚度25μm之接著膜(以下稱為膜C)。 The obtained film was applied to a base polyester film (base film, manufactured by Teijin DuPont Film Co., Ltd., trade name: Purex A53) to a thickness of 50 μm, and dried at 100 ° C for 5 minutes to obtain a thickness of 25 μm. Membrane (hereinafter referred to as film C).

(實施例4) (Example 4)

<接著膜之製作> <Next film production>

將雙酚F型環氧樹脂(DIC公司製EXA-830LVP)19.90重量份、參(羥基苯基)甲烷型環氧樹脂(三菱化學公司製jER1032H60)19.00重量份、具有助焊劑活性之化合物即偏苯三甲酸(東京化成工業公司製)16.30重量份、作為成膜性樹脂之苯氧基樹脂(新日鐵化學公司製FX-280S)27.80重量份、作為硬化促進劑之微膠囊型硬化劑(旭化成E-materials公司製Novacure HX-3941HP)6.50重量份、作為矽烷偶聯劑之3-甲基丙烯醯氧丙基三乙氧基矽烷(信越化學工業公司製KBE-503)0.50重量份、及二氧化矽填料(Admatechs公司製SC1050平均粒徑0.25μm)10.00重量份，解、分散於甲乙酮，製成樹脂濃度50%之樹脂清漆。 19.90 parts by weight of bisphenol F type epoxy resin (EXA-830LVP manufactured by DIC Corporation), 19.00 parts by weight of hydroxyphenyl)methane epoxy resin (jER1032H60 manufactured by Mitsubishi Chemical Corporation), and a compound having flux activity 16.30 parts by weight of benzoic acid (manufactured by Tokyo Chemical Industry Co., Ltd.), 27.80 parts by weight of a phenoxy resin (FX-280S manufactured by Nippon Steel Chemical Co., Ltd.) as a film-forming resin, and a microcapsule-type hardener as a curing accelerator ( 6.50 parts by weight of 3-methyl propylene oxypropyl triethoxy decane (KBE-503 manufactured by Shin-Etsu Chemical Co., Ltd.) as a decane coupling agent, 6.50 parts by weight of Novoure HX-3941HP, manufactured by Asahi Kasei Co., Ltd., and 10.00 parts by weight of a cerium oxide filler (average particle diameter: 0.25 μm, manufactured by Admatech Co., Ltd.) was dissolved and dispersed in methyl ethyl ketone to obtain a resin varnish having a resin concentration of 50%.

將獲得之接著膜用清漆塗佈於基材聚酯膜(基體膜、帝人杜邦薄膜(股)公司製商品名：Purex A53)使厚度成為50μm，100℃乾燥5分鐘，獲得度25μm之接著膜(以下稱為膜D)。 The obtained film was applied to a base polyester film (base film, manufactured by Teijin DuPont Film Co., Ltd., trade name: Purex A53) to a thickness of 50 μm, and dried at 100 ° C for 5 minutes to obtain a film having a degree of 25 μm. (hereinafter referred to as film D).

(實施例5) (Example 5)

<接著膜之製作> <Next film production>

將苯酚酚醛清漆樹脂(住友電木公司製PR-55617)5.40重量份、雙酚A型環氧樹脂(DIC公司製EPICLON 840-S)6.10重量份、參(羥基苯基)甲烷型環氧樹脂(三 菱化學公司製jER1032H60)6.10重量份、作為成膜性樹脂之含環氧基之丙烯酸酯共聚物(NagaseChemtex公司製SG-P3)12.40重量份、作為硬化促進劑之微膠囊型硬化劑(旭化成E-materials公司製Novacure HX-3941HP)4.50重量份、作為矽烷偶聯劑之3-甲基丙烯醯氧丙基三乙氧基矽烷(信越化學工業公司製KBE-503)0.50重量份、及二氧化矽填料(Admatechs公司製SE3050平均粒徑1.0μm)65.00重量份，溶解、分散於甲乙酮，製成樹脂濃度50%之樹脂清漆。 5.10 parts by weight of phenol novolak resin (PR-55617 manufactured by Sumitomo Bakelite Co., Ltd.), 6.10 parts by weight of bisphenol A type epoxy resin (EPICLON 840-S manufactured by DIC Corporation), and phenol (hydroxyphenyl)methane type epoxy resin (three 6.10 parts by weight of an epoxy group-containing acrylate copolymer (SG-P3 manufactured by Nagase Chemtex Co., Ltd.) as a film-forming resin, and a microcapsule-type hardener as a curing accelerator (Asahi Kasei E), which is 6.10 parts by weight of jER1032H60. -0 parts by weight of Novacure HX-3941HP, manufactured by Materials Co., Ltd., 0.50 parts by weight of 3-methylpropenyloxypropyltriethoxydecane (KBE-503 manufactured by Shin-Etsu Chemical Co., Ltd.) as a decane coupling agent, and dioxide 65.00 parts by weight of a ruthenium filler (SE3050 average particle diameter: 1.0 μm manufactured by Admatech Co., Ltd.) was dissolved and dispersed in methyl ethyl ketone to obtain a resin varnish having a resin concentration of 50%.

將獲得之接著膜用清漆塗佈於基材聚酯膜(基體膜、帝人杜邦薄膜(股)公司製商品名：Purex A53)使厚度成為50μm，於100℃乾燥5分鐘，獲得厚度25μm之接著膜(以下稱為膜E)。 The obtained film was applied to a base polyester film (base film, manufactured by Teijin DuPont Film Co., Ltd., trade name: Purex A53) to a thickness of 50 μm, and dried at 100 ° C for 5 minutes to obtain a thickness of 25 μm. Membrane (hereinafter referred to as film E).

(實施例6) (Example 6)

<接著膜之製作> <Next film production>

將聯苯芳烷基型苯酚樹脂(明和化成公司製MEH-7851)12.40重量份、參(羥基苯基)甲烷型環氧樹脂(三菱化學公司製jER1032H60)8.60重量份、具有助焊劑活性之化合物即4-(4-羥基苯氧基)苯甲酸(東京化成工業公司製)7.20重量份、作為成膜性樹脂之含環氧基之丙烯酸酯共聚物(NagaseChemtex公司製SG-P3)21.10重量份、作為硬化促進劑之三苯基膦(北興化學工業公司製TPP)0.20重量份、作為矽烷偶聯劑之3-環氧丙氧基丙基三甲氧基矽烷(信越化學工業公司製KBM-403)0.50重量份、及二氧化矽填料(Admatechs公司製YC100C平均粒徑0.1μm)50.00重量份，溶解、分散於甲乙酮，製成樹脂濃度50%之樹脂清漆。 12.40 parts by weight of a biphenyl aralkyl type phenol resin (MEH-7851 manufactured by Mingwa Kasei Co., Ltd.) and a hexamethylene hydroxymethane type epoxy resin (jER1032H60 manufactured by Mitsubishi Chemical Corporation), 8.60 parts by weight of a compound having flux activity 4,0 parts by weight of 4-(4-hydroxyphenoxy)benzoic acid (manufactured by Tokyo Chemical Industry Co., Ltd.), an epoxy group-containing acrylate copolymer (SG-P3 manufactured by Nagase Chemtex Co., Ltd.) as a film-forming resin, 21.10 parts by weight. 0.20 parts by weight of triphenylphosphine (TPP manufactured by Kitagawa Chemical Co., Ltd.) as a hardening accelerator, and 3-glycidoxypropyltrimethoxydecane as a decane coupling agent (KBM-403, manufactured by Shin-Etsu Chemical Co., Ltd.) 0.50 parts by weight and 50.00 parts by weight of a cerium oxide filler (YC100C average particle diameter 0.1 μm manufactured by Admatech Co., Ltd.) were dissolved and dispersed in methyl ethyl ketone to obtain a resin varnish having a resin concentration of 50%.

將獲得之接著膜用清漆塗佈於基材聚酯膜(基體膜、帝人杜邦薄膜(股)公司製商品名：Purex A53)使厚度成為50μm，於100℃乾燥5分鐘，獲得厚度25μm之接著膜(以下稱為膜F)。 The obtained film was applied to a base polyester film (base film, manufactured by Teijin DuPont Film Co., Ltd., trade name: Purex A53) to a thickness of 50 μm, and dried at 100 ° C for 5 minutes to obtain a thickness of 25 μm. Membrane (hereinafter referred to as film F).

(實施例7) (Example 7)

<接著膜之製作> <Next film production>

將甲酚酚醛清漆樹脂(DIC公司製KA-1160)7.05重量份、雙酚F型環氧樹脂(DIC公司製EXA-830LVP)16.10重量份、作為具有助焊劑活性之化合物之二苯酚酸(東京化成工業公司製)3.00重量份、作為成膜性樹脂之含環氧基之丙烯酸酯共聚物(NagaseChemtex公司製SG-80H)3.20重量份、作為硬化促進劑之2-苯基-4-甲基咪唑(四國化成工業公司製「2P4MZ」)0.15重量份、作為矽烷偶聯劑之3-甲基丙烯醯氧丙基三乙氧基矽烷(信越化學工業公司製KBE-503)0.50重量份、及YA050C平均粒徑0.05μm)70重量份，溶解、分散於甲乙酮，製成樹脂濃度50%之樹脂清漆。 7.05 parts by weight of a cresol novolak resin (KA-1160, manufactured by DIC Corporation) and 16.10 parts by weight of a bisphenol F-type epoxy resin (EXA-830LVP manufactured by DIC Corporation) as a diphenolic acid having a flux-active compound (Tokyo) 3.20 parts by weight of an epoxy group-containing acrylate copolymer (SG-80H manufactured by Nagase Chemtex Co., Ltd.) as a film-forming resin, and a 2-phenyl-4-methyl group as a curing accelerator 0.15 parts by weight of 0.14 parts by weight of 3-methylpropenyloxypropyltriethoxydecane (KBE-503, manufactured by Shin-Etsu Chemical Co., Ltd.) as a decane coupling agent, 0.15 parts by weight of imidazole ("2P4MZ" manufactured by Shikoku Chemicals Co., Ltd.) And 70 parts by weight of YA050C average particle diameter 0.05 μm), dissolved and dispersed in methyl ethyl ketone to obtain a resin varnish having a resin concentration of 50%.

將獲得之接著膜用清漆塗佈於基材聚酯膜(基體膜、帝人杜邦薄膜(股)公司製商品名：Purex A53)使厚度成為50μm，於100℃乾燥5分鐘，獲得厚度25μm之接著膜(以下稱為膜G)。 The obtained film was applied to a base polyester film (base film, manufactured by Teijin DuPont Film Co., Ltd., trade name: Purex A53) to a thickness of 50 μm, and dried at 100 ° C for 5 minutes to obtain a thickness of 25 μm. Membrane (hereinafter referred to as film G).

(實施例8) (Example 8)

<接著膜之製作> <Next film production>

將苯酚芳烷基樹脂(三井化學公司製XLC-4L)9.40重量份、苯酚酚醛清漆樹脂(住友電木公司製PR-55617)9.00重量份、參(羥基苯基)甲烷型環氧樹脂(三菱化學公司製jER1032H60)9.80重量份、作為成膜性樹脂之含環氧基之丙烯酸酯共聚物(NagaseChemtex公司製SG-P3)21.10重量份、作為硬化促進劑之三苯基膦(北興化學工業公司製TPP)0.20重量份、作為矽烷偶聯劑之3-環氧丙氧基丙基三甲氧基矽烷(信越化學工業公司製KBM-403)0.50重量份、及二氧化矽填料((股)公司Admatechs製SC2050平均粒徑0.5μm)50.00重量份，溶解、分散於甲乙酮，製成樹脂濃度50%之樹脂清漆。 9.00 parts by weight of phenol aralkyl resin (XLC-4L manufactured by Mitsui Chemicals Co., Ltd.), 9.00 parts by weight of phenol novolak resin (PR-55617 manufactured by Sumitomo Bakelite Co., Ltd.), ginseng (hydroxyphenyl)methane type epoxy resin (Mitsubishi Chemicals company jER1032H60) 9.80 parts by weight, an epoxy group-containing acrylate copolymer (SG-P3 manufactured by Nagase Chemtex Co., Ltd.) as a film-forming resin, 21.10 parts by weight, and a triphenylphosphine as a hardening accelerator (Beixing Chemical Industry Co., Ltd.) TPO) 0.20 parts by weight of 3-glycidoxypropyltrimethoxydecane (KBM-403, manufactured by Shin-Etsu Chemical Co., Ltd.) as a decane coupling agent, 0.50 parts by weight, and cerium oxide filler (() Admatechs SC2050 average particle diameter 0.5 μm) 50.00 parts by weight, dissolved and dispersed in methyl ethyl ketone to obtain a resin varnish having a resin concentration of 50%.

將獲得之接著膜用清漆塗佈於基材聚酯膜(基體膜、帝人杜邦薄膜(股)公司製商品名：Purex A53)使厚度成為50μm，於100℃乾燥5分鐘，製成厚度25μm之接著膜(以下稱為膜H)。 The obtained film was applied to a base polyester film (base film, manufactured by Teijin DuPont Film Co., Ltd., trade name: Purex A53) to a thickness of 50 μm, and dried at 100 ° C for 5 minutes to have a thickness of 25 μm. Next, a film (hereinafter referred to as film H).

(實施例9) (Example 9)

<接著膜之製作> <Next film production>

將甲酚酚醛清漆樹脂(DIC公司製、KA-1160)7.55重量份、酸酐(三菱化學公司製jER cureYH307)3.75重量份、二環戊二烯型環氧樹脂(DIC公司製EPICLON HP-7200H)13.30重量份、萘型環氧樹脂(DIC公司製EPICLON HP-4770)9.95重量份、作為成膜性樹脂之含環氧基之丙烯酸酯共聚物(NagaseChemtex製SG-80H)9.95重量份、作為硬化促進劑之2-甲基咪唑(四國化成工業公司製2MZ-H)0.10重量份、作為矽烷偶聯劑之3-甲基丙烯醯氧丙基三乙氧基矽烷(信越化學工業公司製KBE-503)1.00重量份、二氧化矽填料(Admatechs公司製SC1050平均粒徑0.25μm)50.00重量份、及丙烯酸系橡膠粒子(三菱嫘縈公司製Metablen W-450A平均粒徑0.2μm)4.40重量份，溶解、分散於甲乙酮，製成樹脂濃度50%之樹脂清漆。 7.75 parts by weight of cresol novolak resin (KA-1160, manufactured by DIC Corporation), 3.75 parts by weight of an acid anhydride (jER cureYH307 manufactured by Mitsubishi Chemical Corporation), and dicyclopentadiene type epoxy resin (EPICLON HP-7200H manufactured by DIC Corporation) 9.30 parts by weight, a naphthalene type epoxy resin (EPICLON HP-4770, manufactured by DIC Corporation), 9.95 parts by weight, and an epoxy group-containing acrylate copolymer (SG-80H manufactured by Nagase Chemtex) as a film-forming resin, 9.95 parts by weight, as hardening 0.10 parts by weight of 2-methylimidazole (2MZ-H, manufactured by Shikoku Chemicals Co., Ltd.) as a promoter, 3-methylpropenyloxypropyltriethoxydecane as a decane coupling agent (KBE manufactured by Shin-Etsu Chemical Co., Ltd.) - 503 parts by weight of 1.00 parts by weight of cerium oxide filler (SC1050 average particle diameter: 0.25 μm, manufactured by Admatech Co., Ltd.), and acrylic rubber particles (Metablen W-450A average particle diameter: 0.2 μm, manufactured by Mitsubishi Corporation), 4.40 parts by weight. It is dissolved and dispersed in methyl ethyl ketone to prepare a resin varnish having a resin concentration of 50%.

將獲得之接著膜用清漆塗佈於基材聚酯膜(基體膜、帝人杜邦薄膜(股)公司製商品名：Purex A53)使厚度成為50μm，於100℃乾燥5分鐘，獲得厚度25μm之接著膜(以下稱為膜I)。 The obtained film was applied to a base polyester film (base film, manufactured by Teijin DuPont Film Co., Ltd., trade name: Purex A53) to a thickness of 50 μm, and dried at 100 ° C for 5 minutes to obtain a thickness of 25 μm. Membrane (hereinafter referred to as membrane I).

(實施例10) (Embodiment 10)

<接著膜之製作> <Next film production>

將聯苯芳烷基型苯酚樹脂(明和化成(股)公司製MEH-7851)14.20重量份、雙酚A型環氧樹脂(DIC公司製EPICLON840-S)36.40重量份、二環戊二烯型環氧樹 脂(DIC公司製EPICLON HP-7200H)12.50重量份、作為具有助焊劑活性之化合物之4-(4-羥基苯氧基)苯甲酸(東京化成工業公司製)10.30重量份、作為成膜性樹脂之苯氧基樹脂(新日鐵住金公司製FX-280S)15.30重量份、作為硬化促進劑之三苯基膦(北興化學工業公司製TPP)0.30重量份、作為矽烷偶聯劑之3-甲基丙烯醯氧丙基三乙氧基矽烷(信越化學工業公司製KBE-503)1.00重量份、及二氧化矽填料(Admatechs公司製SE3050平均粒徑1.0μm)10.00重量份，溶解、分散於甲乙酮，製成樹脂濃度50%之樹脂清漆。 14.20 parts by weight of a biphenyl aralkyl type phenol resin (MEH-7851 manufactured by Mingwa Kasei Co., Ltd.), 36.40 parts by weight of a bisphenol A type epoxy resin (EPICLON 840-S manufactured by DIC Corporation), and a dicyclopentadiene type. Epoxy tree 12.10 parts by weight of a lipid (manufactured by DIC Corporation, EPICLON HP-7200H), 10.30 parts by weight of 4-(4-hydroxyphenoxy)benzoic acid (manufactured by Tokyo Chemical Industry Co., Ltd.) as a flux-active compound, as a film-forming resin 15.30 parts by weight of phenoxy resin (FX-280S manufactured by Nippon Steel & Sumitomo Metal Co., Ltd.), 0.30 part by weight of triphenylphosphine (TPP manufactured by Kitagawa Chemical Industries Co., Ltd.) as a curing accelerator, and 3-methyl as a decane coupling agent 1.00 parts by weight of propylene propylene oxide triethoxy decane (KBE-503 manufactured by Shin-Etsu Chemical Co., Ltd.) and 10.00 parts by weight of cerium oxide filler (SE3050 average particle diameter: 1.0 μm manufactured by Admatech Co., Ltd.), dissolved and dispersed in methyl ethyl ketone A resin varnish having a resin concentration of 50% was prepared.

將獲得之接著膜用清漆塗佈於基材聚酯膜(基體膜、帝人杜邦薄膜(股)公司製商品名：Purex A53)使厚度成為50μm，於100℃乾燥5分鐘，獲得厚度25μm之接著膜(以下稱為膜J)。 The obtained film was applied to a base polyester film (base film, manufactured by Teijin DuPont Film Co., Ltd., trade name: Purex A53) to a thickness of 50 μm, and dried at 100 ° C for 5 minutes to obtain a thickness of 25 μm. Membrane (hereinafter referred to as film J).

(實施例11) (Example 11)

<接著膜之製作> <Next film production>

將苯酚芳烷基樹脂(三井化學公司製Milex XLC-4L)7.10重量份、雙酚A型環氧樹脂(DIC公司製EPICLON840-S)18.25重量份、作為具有助焊劑活性之化合物之還原酚酞(東京化成工業公司製)5.10重量份、作為成膜性樹脂之苯氧基樹脂(三菱化學公司製YX-6954)3.90重量份、作為硬化促進劑之2-甲基咪唑(四國化成工業公司製2MZ-H)0.15重量份、作為矽烷偶聯劑之3-甲基丙烯醯氧丙基三乙氧基矽烷(信越化學工業公司製KBE-503)0.50重量份、二氧化矽填料(Admatechs公司製SC2050平均粒徑0.5μm)65.00重量份，溶解、分散於甲乙酮，製成樹脂濃度50%之樹脂清漆。 7.10 parts by weight of phenol aralkyl resin (Milex XLC-4L manufactured by Mitsui Chemicals Co., Ltd.) and 18.25 parts by weight of bisphenol A type epoxy resin (EPICLON 840-S manufactured by DIC Corporation) as reduced phenolphthalein as a compound having flux activity ( 5.10 parts by weight of a phenoxy resin (YX-6954, manufactured by Mitsubishi Chemical Corporation) as a film-forming resin, and 2-methylimidazole as a curing accelerator (manufactured by Shikoku Chemicals Co., Ltd.) 2MZ-H) 0.15 parts by weight of 3-methyl propylene oxypropyl triethoxy decane (KBE-503, manufactured by Shin-Etsu Chemical Co., Ltd.) as a decane coupling agent, 0.50 parts by weight, cerium oxide filler (manufactured by Admatech Co., Ltd.) SC2050 average particle diameter 0.5 μm) 65.00 parts by weight, dissolved and dispersed in methyl ethyl ketone to obtain a resin varnish having a resin concentration of 50%.

將獲得之接著膜用清漆塗佈於基材聚酯膜(基體膜、帝人杜邦薄膜(股)公司製商品名：Purex A53)使厚度成為50μm，於100℃乾燥5分鐘，獲得厚度25μm之接著膜(以下稱為膜K)。 The obtained film was applied to a base polyester film (base film, manufactured by Teijin DuPont Film Co., Ltd., trade name: Purex A53) to a thickness of 50 μm, and dried at 100 ° C for 5 minutes to obtain a thickness of 25 μm. Membrane (hereinafter referred to as film K).

(實施例12) (Embodiment 12)

<接著膜之製作> <Next film production>

將苯酚酚醛清漆樹脂(住友電木公司製PR-55617)11.20重量份、雙酚F型環氧樹脂(DIC公司製EXA-830LVP)27.70重量份、萘型環氧樹脂(DIC公司製EPICLON HP-4770)8.20重量份、具有助焊劑活性之化合物二苯酚酸(東京化成工業公司製)7.30重量份、作為成膜性樹脂之含環氧基之丙烯酸酯共聚物(NagaseChemtex製SG-80H)14.60重量份、作為硬化促進劑之微膠囊型硬化劑(旭化成E-materials公司製Novacure HX-3941HP)5.00重量份、作為矽烷偶聯劑之3-環氧丙氧基丙基三甲氧基矽烷(信越化學工業公司製KBM-403)1.00重量份、與二氧化矽填料(Tokuyama公司製SS-07平均粒徑0.7μm25.00重量份，溶解、分散於甲乙酮，製成樹脂濃度50%之樹脂清漆。 11.70 parts by weight of phenol novolak resin (PR-55617 manufactured by Sumitomo Bakelite Co., Ltd.), 27.70 parts by weight of bisphenol F type epoxy resin (EXA-830LVP manufactured by DIC Corporation), and naphthalene type epoxy resin (EPICLON HP-made by DIC Corporation) 4770) 8.20 parts by weight of a chemically active compound diphenolic acid (manufactured by Tokyo Chemical Industry Co., Ltd.) 7.30 parts by weight, and an epoxy group-containing acrylate copolymer (Nagase Chemtex SG-80H) as a film-forming resin 14.60 weight 5.00 parts by weight of a microcapsule-type hardener (Novacure HX-3941HP, manufactured by Asahi Kasei E-materials Co., Ltd.) as a hardening accelerator, 3-glycidoxypropyltrimethoxydecane as a decane coupling agent (Shin-Etsu Chemical) 1.00 parts by weight of KBM-403, manufactured by Toray Industries, and a resin varnish having a resin concentration of 50% by dissolving and dispersing in methyl ethyl ketone as a resin varnish having a SS-07 average particle diameter of 0.7 μm and 25.00 parts by weight.

將獲得之接著膜用清漆塗佈在基材聚酯膜(基體膜、帝人杜邦薄膜(股)公司製商品名：Purex A53)使厚度成為50μm，於100℃乾燥5分鐘，獲得厚度25μm之接著膜(以下稱為膜L)。 The obtained film was coated with a varnish on a base polyester film (base film, manufactured by Teijin DuPont Film Co., Ltd., Purex A53) to a thickness of 50 μm, and dried at 100 ° C for 5 minutes to obtain a thickness of 25 μm. Membrane (hereinafter referred to as film L).

(實施例13) (Example 13)

<接著膜之製作> <Next film production>

將甲酚酚醛清漆樹脂(DIC公司製KA-1160)7.13重量份、雙酚F型環氧樹脂(DIC公司製EXA-830LVP)19.86重量份、作為具有助焊劑活性之化合物之偏苯三甲酸(東京化成工業公司製)5.25重量份、作為成膜性樹脂之苯氧基樹脂(三菱化學公司製YX-6954)2.54重量份、作為硬化促進劑之2-苯基-4-甲基咪唑(四國化成工業公司製2P4MZ)0.04重量份、作為矽烷偶聯劑之3-環氧丙氧基丙基三甲氧基矽烷(信越化學工業公司製KBM-403)0.18重量份、及二氧化矽填料(Admatechs公 司製SC1050平均粒徑0.25μm)65.00重量份，溶解、分散於甲乙酮，製成樹脂濃度50%之樹脂清漆。 7.13 parts by weight of cresol novolak resin (KA-1160, manufactured by DIC Corporation) and 19.86 parts by weight of bisphenol F-type epoxy resin (EXA-830LVP manufactured by DIC Corporation), and trimellitic acid as a compound having flux activity ( 5.25 parts by weight of a phenoxy resin (YX-6954, manufactured by Mitsubishi Chemical Corporation) as a film-forming resin, and 2-phenyl-4-methylimidazole as a hardening accelerator (4,5 parts by weight) 0.04 parts by weight of 2P4MZ) manufactured by Kokusai Kasei Co., Ltd., 0.18 parts by weight of 3-glycidoxypropyltrimethoxydecane (KBM-403, manufactured by Shin-Etsu Chemical Co., Ltd.) as a decane coupling agent, and ruthenium dioxide filler ( Admatechs The system has a SC1050 average particle diameter of 0.25 μm and 65.00 parts by weight, and is dissolved and dispersed in methyl ethyl ketone to obtain a resin varnish having a resin concentration of 50%.

將獲得之接著膜用清漆塗佈於基材聚酯膜(基體膜、帝人杜邦薄膜(股)公司製商品名：Purex A53)使厚度成為50μm，於100℃乾燥5分鐘，獲得厚度25μm之接著膜(以下稱為膜M)。 The obtained film was applied to a base polyester film (base film, manufactured by Teijin DuPont Film Co., Ltd., trade name: Purex A53) to a thickness of 50 μm, and dried at 100 ° C for 5 minutes to obtain a thickness of 25 μm. Membrane (hereinafter referred to as membrane M).

(比較例1) (Comparative Example 1)

<接著膜之製作> <Next film production>

將甲酚酚醛清漆樹脂(DIC公司製KA-1160)5.09重量份、雙酚F型環氧樹脂(DIC公司製EXA-830LVP)14.19重量份、具有助焊劑活性之化合物即偏苯三甲酸(東京化成工業公司製)3.75重量份、作為成膜性樹脂之苯氧基樹脂(三菱化學公司製YX-6954)1.81重量份、作為硬化促進劑之2-苯基-4-甲基咪唑(四國化成工業公司製2P4MZ)0.03重量份、作為矽烷偶聯劑之3-環氧丙氧基丙基三甲氧基矽烷(信越化學工業公司製KBM-403)0.13重量份、及二氧化矽填料(Admatechs公司製SC1050)75.00重量份，溶解、分散於甲乙酮，製成樹脂濃度50%之樹脂清漆。 5.09 parts by weight of a cresol novolak resin (KA-1160, manufactured by DIC Corporation), 14.19 parts by weight of a bisphenol F type epoxy resin (EXA-830LVP manufactured by DIC Corporation), and a compound having flux activity, that is, trimellitic acid (Tokyo) 3.75 parts by weight of phenoxy resin (YX-6954, manufactured by Mitsubishi Chemical Corporation) as a film-forming resin, and 2-phenyl-4-methylimidazole (four countries) as a hardening accelerator 0.03 parts by weight of 2P4MZ) manufactured by Chemical Industry Co., Ltd., 3-glycidoxypropyltrimethoxydecane (KBM-403, manufactured by Shin-Etsu Chemical Co., Ltd.) as a decane coupling agent, 0.13 parts by weight, and cerium oxide filler (Admatechs) 75.00 parts by weight of the company's SC1050) was dissolved and dispersed in methyl ethyl ketone to obtain a resin varnish having a resin concentration of 50%.

將獲得之接著膜用清漆塗佈於基材聚酯膜(基體膜、帝人杜邦薄膜(股)公司製商品名：Purex A53)使厚度成為50μm，於100℃乾燥5分鐘，獲得厚度25μm之接著膜(以下稱為膜N)。 The obtained film was applied to a base polyester film (base film, manufactured by Teijin DuPont Film Co., Ltd., trade name: Purex A53) to a thickness of 50 μm, and dried at 100 ° C for 5 minutes to obtain a thickness of 25 μm. Membrane (hereinafter referred to as film N).

(比較例2) (Comparative Example 2)

<接著膜之製作> <Next film production>

將甲酚酚醛清漆樹脂(DIC公司製KA-1160)20.37重量份、雙酚F型環氧樹脂(DIC公司製EXA-830LVP)56.76重量份、具有助焊劑活性之化合物即偏苯三甲酸(東京化成工業公司製)15.00重量份、作為成膜性樹脂之苯氧基樹脂(三菱化學公 司製YX-6954)7.24重量份、作為硬化促進劑之2-苯基-4-甲基咪唑(四國化成工業公司製2P4MZ)0.13重量份、作為矽烷偶聯劑之3-環氧丙氧基丙基三甲氧基矽烷(信越化學工業公司製KBM-403)0.50重量份，溶解、分散於甲乙酮，製成樹脂濃度50%之樹脂清漆。 20.37 parts by weight of cresol novolak resin (KA-1160, manufactured by DIC Corporation), 56.76 parts by weight of bisphenol F-type epoxy resin (EXA-830LVP manufactured by DIC Corporation), and a compound having flux activity, trimellitic acid (Tokyo) 15.00 parts by weight of a phenoxy resin as a film-forming resin (Mitsubishi Chemical Corporation) 7.2 parts by weight of 2-phenyl-4-methylimidazole (2P4MZ manufactured by Shikoku Kasei Kogyo Co., Ltd.) as a hardening accelerator, 0.13 parts by weight, and 3-glycoloxypropoxide as a decane coupling agent 0.50 parts by weight of propyltrimethoxydecane (KBM-403, manufactured by Shin-Etsu Chemical Co., Ltd.) was dissolved and dispersed in methyl ethyl ketone to prepare a resin varnish having a resin concentration of 50%.

將獲得之接著膜用清漆塗佈於基材聚酯膜(基體膜、帝人杜邦薄膜(股)公司製商品名：Purex A53)使厚度成為50μm，於100℃乾燥5分鐘，獲得厚度25μm之接著膜(以下稱為膜O)。 The obtained film was applied to a base polyester film (base film, manufactured by Teijin DuPont Film Co., Ltd., trade name: Purex A53) to a thickness of 50 μm, and dried at 100 ° C for 5 minutes to obtain a thickness of 25 μm. Membrane (hereinafter referred to as membrane O).

(比較例3) (Comparative Example 3)

<接著膜之製作> <Next film production>

將苯酚芳烷基樹脂(三井化學(股)公司製Milex XLC-4L)22.90重量份、雙酚A型環氧樹脂(DIC(股)公司製EPICLON 840-S)43.00重量份、具有助焊劑活性之化合物二苯酚酸(東京化成工業(股)公司製)11.80重量份、作為成膜性樹脂之含環氧基之丙烯酸酯共聚物(NagaseChemtex(股)公司製SG-P3)10.70重量份、作為硬化促進劑之三苯基膦(北興化學工業(股)公司製TPP)0.60重量份、作為矽烷偶聯劑之3-甲基丙烯醯氧丙基三乙氧基矽烷(信越化學工業(股)公司製KBE-503)1.00重量份、及二氧化矽填料(日本AEROSIL公司製AEROSIL200平均粒徑0.012μm)10.00重量份，溶解、分散於甲乙酮，製成樹脂濃度50%之樹脂清漆。 22.90 parts by weight of phenol aralkyl resin (Milex XLC-4L manufactured by Mitsui Chemicals Co., Ltd.) and 43.00 parts by weight of bisphenol A type epoxy resin (EPICLON 840-S manufactured by DIC Co., Ltd.), having flux activity 11.70 parts by weight of a compound bisphenolic acid (manufactured by Tokyo Chemical Industry Co., Ltd.), 10.70 parts by weight of an epoxy group-containing acrylate copolymer (SG-P3 manufactured by Nagase Chemtex Co., Ltd.) as a film-forming resin, 0.60 parts by weight of triphenylphosphine (TPP manufactured by Behind Chemical Industry Co., Ltd.) as a hardening accelerator, 3-methylpropenyloxypropyltriethoxydecane as a decane coupling agent (Shin-Etsu Chemical Industry Co., Ltd.) 1.00 parts by weight of KBE-503) and 10.00 parts by weight of cerium oxide filler (average particle diameter of AEROSIL 200 manufactured by AEROSIL Co., Ltd., Japan) were dissolved and dispersed in methyl ethyl ketone to obtain a resin varnish having a resin concentration of 50%.

將獲得之接著膜用清漆塗佈於基材聚酯膜(基體膜、帝人杜邦薄膜(股)公司製商品名：Purex A53)使厚度成為50μm，於100℃乾燥5分鐘，獲得厚度25μm之接著膜(以下稱為膜P)。 The obtained film was applied to a base polyester film (base film, manufactured by Teijin DuPont Film Co., Ltd., trade name: Purex A53) to a thickness of 50 μm, and dried at 100 ° C for 5 minutes to obtain a thickness of 25 μm. Membrane (hereinafter referred to as film P).

(比較例4) (Comparative Example 4)

<接著膜之製作> <Next film production>

將甲酚酚醛清漆樹脂(DIC公司製KA-1160)5.90重量份、雙酚F型環氧樹脂(DIC公司製EXA-830LVP)17.50重量份、作為成膜性樹脂之含環氧基之丙烯酸酯共聚物(NagaseChemtex製SG-80H)5.30重量份、作為硬化促進劑之2-甲基咪唑(四國化成工業公司製2MZ-H)0.30重量份、作為矽烷偶聯劑之3-甲基丙烯醯氧丙基三乙氧基矽烷(信越化學工業公司製KBE-503)1.00重量份、及二氧化矽填料(Admatechs公司製SE3050平均粒徑1.0μm)70.00重量份，溶解、分散於甲乙酮，製成樹脂濃度50%之樹脂清漆。 5.90 parts by weight of a cresol novolac resin (KA-1160, manufactured by DIC Corporation) and 17.50 parts by weight of a bisphenol F-type epoxy resin (EXA-830LVP manufactured by DIC Corporation), and an epoxy group-containing acrylate as a film-forming resin. Copolymer (SG-80H, manufactured by Nagase Chemtex), 0.30 parts by weight of 2-methylimidazole (2MZ-H, manufactured by Shikoku Chemicals Co., Ltd.) as a curing accelerator, and 0.30 parts by weight of 3-methylpropene oxime as a decane coupling agent. 1.00 parts by weight of oxypropyltriethoxydecane (KBE-503 manufactured by Shin-Etsu Chemical Co., Ltd.) and 70.00 parts by weight of cerium oxide filler (SE3050 average particle diameter: 1.0 μm manufactured by Admatech Co., Ltd.) were dissolved and dispersed in methyl ethyl ketone. Resin varnish with a resin concentration of 50%.

將獲得之接著膜用清漆塗佈於基材聚酯膜(基體膜、帝人杜邦薄膜(股)公司製商品名：Purex A53)使厚度成為50μm，於100℃乾燥5分鐘，獲得厚度25μm之接著膜(以下稱為膜Q)。 The obtained film was applied to a base polyester film (base film, manufactured by Teijin DuPont Film Co., Ltd., trade name: Purex A53) to a thickness of 50 μm, and dried at 100 ° C for 5 minutes to obtain a thickness of 25 μm. Membrane (hereinafter referred to as film Q).

(比較例5) (Comparative Example 5)

<接著膜之製作> <Next film production>

將甲酚酚醛清漆樹脂(DIC公司製KA-1160)20.37重量份、雙酚F型環氧樹脂(DIC公司製EXA-830LVP)56.76重量份、具有助焊劑活性之化合物即偏苯三甲酸(東京化成工業公司製)15.00重量份、作為成膜性樹脂之苯氧基樹脂(三菱化學公司製YX-6954)7.24重量份、作為硬化促進劑之2-苯基-4-甲基咪唑(四國化成工業公司製2P4MZ)0.13重量份、作為矽烷偶聯劑之3-環氧丙氧基丙基三甲氧基矽烷(信越化學工業公司製KBM-403)0.50重量份，溶解、分散於甲乙酮，製成樹脂濃度50%之樹脂清漆。 20.37 parts by weight of cresol novolak resin (KA-1160, manufactured by DIC Corporation), 56.76 parts by weight of bisphenol F-type epoxy resin (EXA-830LVP manufactured by DIC Corporation), and a compound having flux activity, trimellitic acid (Tokyo) 15.00 parts by weight of phenoxy resin (YX-6954, manufactured by Mitsubishi Chemical Corporation) as a film-forming resin, and 7.24 parts by weight of 2-phenyl-4-methylimidazole as a hardening accelerator (four countries) 0.13 parts by weight of 2P4MZ) manufactured by Chemical Industry Co., Ltd., 0.50 parts by weight of 3-glycidoxypropyltrimethoxydecane (KBM-403, manufactured by Shin-Etsu Chemical Co., Ltd.) as a decane coupling agent, dissolved and dispersed in methyl ethyl ketone. A resin varnish having a resin concentration of 50%.

將獲得之接著膜用清漆塗佈於基材聚酯膜(基體膜、帝人杜邦薄膜(股)公司製商品名：Purex A53)使厚度成為50μm，於100℃乾燥5分鐘，獲得厚度25μm之接著膜(以下稱為膜R)後，對於獲得之膜之表面施以電暈處理。 The obtained film was applied to a base polyester film (base film, manufactured by Teijin DuPont Film Co., Ltd., trade name: Purex A53) to a thickness of 50 μm, and dried at 100 ° C for 5 minutes to obtain a thickness of 25 μm. After the film (hereinafter referred to as film R), the surface of the obtained film was subjected to corona treatment.

[接著膜之評價] [Subsequent evaluation of the film]

<表面粗糙度Ra測定> <Measurement of Surface Roughness Ra>

針對各實施例及比較例獲得之接著膜，將接著膜固定在載玻片上使接著膜之基體膜面密合於載玻片，以東京精密製表面粗糙度計SURFCOM1400D之探針掃描接著膜表面以測定表面粗糙度Ra。前述表面粗糙度Ra係依日本工業規格JIS-B0601測定之算術平均粗糙度。結果示於表1、2。 For the adhesive film obtained in each of the examples and the comparative examples, the adhesive film was fixed on a glass slide so that the base film surface of the adhesive film was adhered to the glass slide, and the surface of the film was scanned with a probe of a Tokyo precision surface roughness meter SURFCOM 1400D. To determine the surface roughness Ra. The surface roughness Ra is an arithmetic mean roughness measured according to Japanese Industrial Standard JIS-B0601. The results are shown in Tables 1 and 2.

<透光率測定> <Light transmittance measurement>

針對各實施例及比較例獲得之接著膜，使用島津製作所製分光光度計UV-160測定於700nm之透光率。結果示於表1、2。 With respect to the adhesive film obtained in each of the examples and the comparative examples, the light transmittance at 700 nm was measured using a spectrophotometer UV-160 manufactured by Shimadzu Corporation. The results are shown in Tables 1 and 2.

<表面粗糙度Ra與透光率之比> <The ratio of surface roughness Ra to light transmittance>

針對各實施例及比較例獲得之接著膜，求取令使用東京精密製表面粗糙度計SURFCOM1400D測得之表面粗糙度Ra為C，使用島津製作所製分光光度計UV-160測得之於700nm之透光率為D時，表面粗糙度Ra與透光率之比C/D(μm/%)。結果示於表1、2。 For the adhesive film obtained in each of the examples and the comparative examples, the surface roughness Ra measured by the Tokyo Precision Surface Durometer SURFCOM1400D was determined to be C, and it was measured at 700 nm using a spectrophotometer UV-160 manufactured by Shimadzu Corporation. When the light transmittance is D, the ratio of the surface roughness Ra to the light transmittance is C/D (μm/%). The results are shown in Tables 1 and 2.

<熔融黏度測定> <Melt viscosity measurement>

將各實施例及比較例獲得之接著膜予以疊層以製成厚度100μm之測定用樣本，使用黏彈性測定裝置(Thermo fisher scientific公司製「MARS」)以平行板20mmφ、間隙0.05mm、頻率0.1Hz、升溫速度為10℃/分之條件測定熔融黏度，將成為最低之熔融黏度定義為測定值。結果示於表1、2。 The film obtained by each of the examples and the comparative examples was laminated to prepare a sample for measurement having a thickness of 100 μm, and a viscoelasticity measuring device ("MARS" manufactured by Thermo Fisher Scientific Co., Ltd.) was used to have a parallel plate of 20 mmφ, a gap of 0.05 mm, and a frequency of 0.1. The melt viscosity was measured under the conditions of Hz and a temperature increase rate of 10 ° C /min, and the lowest melt viscosity was defined as a measured value. The results are shown in Tables 1 and 2.

<平均線膨脹係數測定> <Measurement of average linear expansion coefficient>

將各實施例及比較例獲得之接著膜於180℃處理2小時，使用寬4mm、厚度100μm之條狀樣本測定線膨脹係數。測定條件係以拉伸模式、升溫速度10℃/分、 負荷30mN、夾頭間距離10mm測定，作為α1之於25~75℃之平均線膨脹係數之結果示於表1、2。 The film obtained in each of the examples and the comparative examples was treated at 180 ° C for 2 hours, and a linear expansion coefficient was measured using a strip sample having a width of 4 mm and a thickness of 100 μm. The measurement conditions were in the tensile mode and the temperature increase rate of 10 ° C / min. The load was measured at 30 mN and the distance between the chucks was 10 mm, and the results of the average linear expansion coefficient of α1 at 25 to 75 ° C are shown in Tables 1 and 2.

<半導體裝置之製造> <Manufacture of semiconductor device>

針對各實施例及比較例獲得之各接著膜10依以下方法製造半導體裝置100。首先準備單面具有多數表面含有作為低熔點導電性金屬之由錫、銀之合金構成之焊料的第1端子的多種矽晶圓A~C(直徑8吋、厚度100μm、半導體晶片尺寸10mm×10mm、第1端子之高度、第1端子之寬度、被覆第1端子表面之低熔點之金屬組成物之組成、金屬組成物之寬度、金屬組成物間之距離、第1端子間之距離、每第1端子之1半導體晶片之數目等示於表3。)。將預先切成與矽晶圓同尺寸之接著膜，以接觸各矽晶圓之具第1端子之面之方式，將接著膜與矽晶圓疊層。將其以層合機於貼合溫度80℃、壓力0.8MPa、2mm/s層合，獲得接著膜與矽晶圓之疊層體37。 The semiconductor device 100 was produced in the following manner for each of the bonding films 10 obtained in the respective examples and comparative examples. First, a plurality of tantalum wafers A to C (having a diameter of 8 Å, a thickness of 100 μm, and a semiconductor wafer size of 10 mm × 10 mm) having a first terminal having a solder composed of a tin or a silver alloy as a low-melting-conductive metal on a single surface are prepared. The height of the first terminal, the width of the first terminal, the composition of the metal composition covering the low melting point of the surface of the first terminal, the width of the metal composition, the distance between the metal compositions, the distance between the first terminals, and the distance between the first terminals The number of semiconductor wafers of one terminal 1 and the like are shown in Table 3.). The adhesive film of the same size as the tantalum wafer is cut in advance, and the adhesive film and the tantalum wafer are laminated so as to contact the surface of each of the tantalum wafers having the first terminal. This was laminated at a bonding temperature of 80 ° C, a pressure of 0.8 MPa, and 2 mm/s in a laminator to obtain a laminate 37 of a bonding film and a tantalum wafer.

然後，以層合機將切割膠帶貼合在和各矽晶圓之與貼合接著膜之面為相反的面。此時以貼合溫度為25℃、壓力0.8MPa、2mm/s，將接著膜與矽晶圓之疊層體貼合切割膠帶。 Then, the dicing tape is bonded to the opposite side of the surface of each of the wafers and the bonding film by a laminator. At this time, the dicing tape was bonded to the laminate of the adhesive film and the ruthenium wafer at a bonding temperature of 25 ° C, a pressure of 0.8 MPa, and 2 mm/s.

其次，將切割膠帶固定在晶圓環，疊層在切割機(DFD6360、Disco(股)製)之切割台，並固定矽晶圓，將基材層剝離。再者，從矽晶圓側使用切割機依以下條件切割(切斷)。藉此將矽晶圓分切，獲得以下切割尺寸之半導體晶片20。 Next, the dicing tape was fixed to the wafer ring, laminated on a cutting table of a cutting machine (DFD6360, Disco), and the enamel wafer was fixed to peel off the substrate layer. Further, the cutter was cut (cut) by the following conditions from the side of the crucible wafer. Thereby, the germanium wafer is slit to obtain the semiconductor wafer 20 of the following cut size.

《切割條件》 Cutting conditions

切割尺寸：10mm×10mm四方 Cutting size: 10mm × 10mm square

切割速度：50mm/sec Cutting speed: 50mm/sec

心軸轉速：40,000rpm Mandrel speed: 40,000 rpm

切割最大深度：0.130mm(從矽晶圓之表面算起之切口量) Maximum cutting depth: 0.130mm (the amount of cut from the surface of the wafer)

切割刀片之厚度：15μm Cutting blade thickness: 15μm

其次，以針從切割膠帶一體型接著膜之支持膜側(背面)將1個半導體晶片往上戳，被向上戳的半導體晶片的表面以黏晶機之套爪吸附的狀態被往上拉起。藉此拾取附有接著膜之半導體晶片。 Next, one semiconductor wafer is topped up from the support film side (back surface) of the dicing tape-integrated film, and the surface of the upwardly-punched semiconductor wafer is pulled up in a state in which the die of the die bonder is sucked up. . Thereby, the semiconductor wafer with the adhesive film attached thereto is picked up.

然後使拾取之半導體晶片反轉，並使銅凸塊及接著膜位在下側。再者，準備具有多種對應於半導體晶片之第1端子之排列的墊的多種中介片，以使中介片之墊與各半導體晶片之多數第1端子抵接的方式進行位置對準，於此同時將半導體晶片以150℃、1秒、1kgf(=9.8N)的條件貼附於中介片。 The picked semiconductor wafer is then inverted and the copper bumps and the film are placed on the underside. Further, a plurality of interposers having a plurality of pads corresponding to the arrangement of the first terminals of the semiconductor wafer are prepared so as to position the pads of the interposer in contact with the plurality of first terminals of the semiconductor wafers. The semiconductor wafer was attached to the interposer under the conditions of 150 ° C, 1 second, and 1 kgf (= 9.8 N).

再者，以覆晶晶片黏晶機的頭將半導體晶片於235℃、5秒、30N進行熱壓接，使凸塊表面之合金熔融而實施半導體晶片與中介片之焊接。 Further, the semiconductor wafer was thermocompression bonded at 235 ° C, 5 seconds, and 30 N by the head of the flip chip die bonder, and the alloy of the bump surface was melted to perform soldering of the semiconductor wafer and the interposer.

然後，於180℃、60分鐘、0.8MPa之流體壓力(空氣壓力)之氣體環境下加熱使接著膜硬化，獲得疊層體之硬化物38，其具有半導體晶片20、中介片30、插入於前述半導體晶片20與前述中介片30之間之接著膜10之硬化物層(密封層)80。獲得半導體裝置100，其含有前述疊層體之硬化物38，係將前述半導體晶片20與前述中介片30以前述接著膜10之硬化物密封而得。 Then, the bonding film is cured by heating in a gas atmosphere of a fluid pressure (air pressure) of 180 ° C, 60 minutes, and 0.8 MPa to obtain a cured product 38 having a semiconductor wafer 20, an interposer 30, and inserted in the foregoing. A cured layer (sealing layer) 80 of the film 10 between the semiconductor wafer 20 and the interposer 30 is formed. The semiconductor device 100 is obtained, and the cured product 38 of the laminate is obtained by sealing the semiconductor wafer 20 and the intermediate sheet 30 with the cured material of the adhesive film 10.

<連接可靠性> <Connection reliability>

針對各實施例及比較例之接著膜、及使用各矽晶圓獲得之半導體裝置100各20個，交替各暴露於-55℃之條件下30分鐘、125℃之條件下30分鐘作為1個周期，溫度周期試驗進行100次周期，針對試驗後之半導體裝置，以數位多功能測定儀測定半導體晶片與電路基板之連接電阻值，並評價連接可靠性。結果如表4。各符號如下。 The adhesive film of each of the examples and the comparative examples and each of the semiconductor devices 100 obtained by using each of the germanium wafers were alternately exposed to -55 ° C for 30 minutes and 125 ° C for 30 minutes as one cycle. The temperature cycle test was carried out for 100 cycles. For the semiconductor device after the test, the connection resistance value of the semiconductor wafer and the circuit substrate was measured by a digital multi-function measuring instrument, and the connection reliability was evaluated. The results are shown in Table 4. The symbols are as follows.

◎：全部20個半導體裝置的連接電阻值未達10Ω。 ◎: The connection resistance value of all 20 semiconductor devices was less than 10 Ω.

○：1個以上之半導體裝置之連接電阻值為10Ω以上、未達20Ω。 ○: The connection resistance value of one or more semiconductor devices is 10 Ω or more and less than 20 Ω.

×：1個以上之半導體裝置之連接電阻值為20Ω以上。 ×: The connection resistance value of one or more semiconductor devices is 20 Ω or more.

<連接部之位置偏離> <The position of the connection is deviated>

針對使用各實施例及比較例之接著膜獲得之半導體裝置100，切斷並以SEM確認連接部20處，觀察連接部之位置偏離並評價。結果如表4。各符號如下。 With respect to the semiconductor device 100 obtained by using the adhesive films of the respective Examples and Comparative Examples, the connection portion 20 was cut and confirmed by SEM, and the positional deviation of the connection portion was observed and evaluated. The results are shown in Table 4. The symbols are as follows.

◎：全部20個連接部無位置偏離。 ◎: All 20 joints have no positional deviation.

○：有1個以上3個以下之連接部確認有位置偏離。 ○: One or more connection units of three or less were confirmed to have a positional deviation.

×：有4個以上之連接部確認有位置偏離。 ×: Four or more connection portions were confirmed to have a positional deviation.

由實施例、比較例可知：依照本發明可提供接著膜10，其兼顧充分透明性與焊接部之可靠性，且提高更窄節距化/窄間隙化之焊接部之接合性、及半導體裝置製造之產量，並可提供焊接部之可靠性提高之半導體裝置100。 According to the present invention and the comparative example, it is possible to provide the adhesive film 10 which has sufficient transparency and reliability of the welded portion, and improves the bonding property of the welded portion having a narrower pitch and a narrower gap, and the semiconductor device. The manufacturing cost and the semiconductor device 100 with improved reliability of the soldering portion can be provided.

20‧‧‧半導體晶片(電子零件) 20‧‧‧Semiconductor wafers (electronic parts)

21‧‧‧第1端子 21‧‧‧1st terminal

30‧‧‧中介片(電路零件) 30‧‧‧Intermediary film (circuit parts)

31‧‧‧第2端子 31‧‧‧2nd terminal

38‧‧‧疊層體之硬化物 38‧‧‧ hardened body of laminate

70‧‧‧凸塊 70‧‧‧Bumps

80‧‧‧密封層(接著膜之硬化物層) 80‧‧‧ Sealing layer (following the hardened layer of the film)

81‧‧‧連接部 81‧‧‧Connecting Department

100‧‧‧半導體裝置 100‧‧‧Semiconductor device

Claims (23)

一種接著膜，其係插入於表面具有多數第1端子之電子零件、與具有對應於該端子之多數第2端子之電路零件之間，將該第1端子與第2端子予以電性地連接之端子間連接用接著膜；其特徵為：該第1端子之寬為3μm以上100μm以下，該第1端子具有被覆端子表面之至少一部分之低熔點之金屬組成物，令該第1端子之寬為A、該金屬組成物之寬為B時，滿足0.6<A/B<1.4，且B滿足2μm以上170μm以下，相鄰的第1端子彼此擁有之金屬組成物間之距離為3μm以上60μm以下，該接著膜由含有10重量%以上70重量%以下之填充材的樹脂組成物構成，表面粗糙度Ra為0.03μm以上1.0μm以下，該表面粗糙度Ra係依據日本工業規格JIS-B0601測定之算術平均粗糙度。 An adhesive film is inserted between an electronic component having a plurality of first terminals on a surface thereof and a circuit component having a plurality of second terminals corresponding to the terminal, and electrically connecting the first terminal and the second terminal An adhesive film for connecting between terminals; the first terminal has a width of 3 μm or more and 100 μm or less, and the first terminal has a low melting point metal composition covering at least a part of the surface of the terminal, and the width of the first terminal is A. When the width of the metal composition is B, 0.6<A/B<1.4 is satisfied, and B satisfies 2 μm or more and 170 μm or less, and the distance between the metal compositions possessed by the adjacent first terminals is 3 μm or more and 60 μm or less. The adhesive film is composed of a resin composition containing 10% by weight or more and 70% by weight or less of a filler, and has a surface roughness Ra of 0.03 μm or more and 1.0 μm or less. The surface roughness Ra is an arithmetic measured according to Japanese Industrial Standard JIS-B0601. Average roughness. 如申請專利範圍第1項之接著膜，其中，該接著膜於700nm之透光率為15%以上100%以下。 The adhesive film according to claim 1, wherein the adhesive film has a light transmittance of from 100% to 100% at 700 nm. 如申請專利範圍第1或2項之接著膜，其中，令該表面粗糙度Ra為C、該接著膜於700nm之透光率為D時，該表面粗糙度Ra與該透光率之比[C/D]為1.8×10-2μm/%以下。 An adhesive film according to claim 1 or 2, wherein the surface roughness Ra is C, and the light transmittance of the adhesive film at 700 nm is D, the ratio of the surface roughness Ra to the light transmittance [ C/D] is 1.8 × 10 -2 μm / % or less. 如申請專利範圍第1至3項中任一項之接著膜，其中，該填充材之平均粒徑為0.01μm以上、0.5μm以下。 The adhesive film according to any one of claims 1 to 3, wherein the filler has an average particle diameter of 0.01 μm or more and 0.5 μm or less. 如申請專利範圍第1至4項中任一項之接著膜，其中，該填充材為無機填充材。 The adhesive film according to any one of claims 1 to 4, wherein the filler is an inorganic filler. 如申請專利範圍第1至5項中任一項之接著膜，其中，該樹脂組成物包含環氧樹脂、硬化劑、及成膜性樹脂。 The adhesive film according to any one of claims 1 to 5, wherein the resin composition comprises an epoxy resin, a hardener, and a film-forming resin. 如申請專利範圍第1至6項中任一項之接著膜，其中，該樹脂組成物含有具有苯酚性羥基及/或具有羧基之化合物。 The adhesive film according to any one of claims 1 to 6, wherein the resin composition contains a compound having a phenolic hydroxyl group and/or a carboxyl group. 如申請專利範圍第7項之接著膜，其中，該化合物在樹脂組成物內的含量為3%以上20%以下。 The film of the seventh aspect of the invention, wherein the content of the compound in the resin composition is 3% or more and 20% or less. 如申請專利範圍第7或8項之接著膜，其中，該化合物在1分子中具有2個以上之苯酚性羥基及1個以上之羧基。 The film according to claim 7 or 8, wherein the compound has two or more phenolic hydroxyl groups and one or more carboxyl groups in one molecule. 如申請專利範圍第7或8項之接著膜，其中，該化合物於1分子中含有1個以上的苯醚基。 An adhesive film according to claim 7 or 8, wherein the compound contains one or more phenylene ether groups in one molecule. 如申請專利範圍第1至10項中任一項之接著膜，其中，該第1端子具有柱形狀。 The adhesive film according to any one of claims 1 to 10, wherein the first terminal has a column shape. 一種切割片一體型接著膜，係將切割片與如申請專利範圍第1至11項中任一項之接著膜予以疊層。 A dicing sheet-integrated film in which a dicing sheet is laminated with an adhesive film according to any one of claims 1 to 11. 一種背面研磨膠帶一體型接著膜，係將背面研磨膠帶、與如申請專利範圍第1至11項中任一項之接著膜予以疊層。 A back-grinding tape-integrated film in which a back-grinding tape is laminated with an adhesive film according to any one of claims 1 to 11. 一種背面研磨膠帶兼切割片一體型接著膜，係將背面研磨膠帶兼切割片、與如申請專利範圍第1至11項中任一項之接著膜予以疊層。 A back-grinding tape and a dicing sheet-integrated film are laminated with a back-grinding tape and a dicing sheet, and an adhesive film according to any one of claims 1 to 11. 一種疊層體，具有：表面具有多數第1端子之電子零件、及設於該電子零件之第1端子側之如申請專利範圍第1至11項中任一項之接著膜；其特徵為：該第1端子之寬為3μm以上100μm以下，該第1端子具有被覆端子表面之至少一部分之低熔點之金屬組成物，令該第1端子之寬為A、該金屬組成物之寬為B時，滿足0.6<A/B<1.4，B滿足2μm以上170μm以下，相鄰之第1端子彼此擁有之金屬組成物間之距離為3μm以上60μm以下。 A laminate comprising: an electronic component having a plurality of first terminals on a surface thereof; and an adhesive film according to any one of claims 1 to 11 provided on a first terminal side of the electronic component; The width of the first terminal is 3 μm or more and 100 μm or less. The first terminal has a metal composition having a low melting point covering at least a part of the surface of the terminal, and the width of the first terminal is A, and the width of the metal composition is B. It satisfies 0.6<A/B<1.4, B satisfies 2 μm or more and 170 μm or less, and the distance between the metal compositions possessed by the adjacent first terminals is 3 μm or more and 60 μm or less. 如申請專利範圍第15項之疊層體，具有多數該電子零件、及多數如申請專利範圍第1至11項中任一項之接著膜。 The laminate of claim 15 has a plurality of the electronic parts, and a plurality of the adhesive films of any one of the first to eleventh aspects of the patent application. 一種疊層體之硬化物，具有：表面具有多數第1端子之電子零件、具有對應於該第1端子之多數第2端子之電路零件、及插入於該電子零件與該電路零件之間之如申請專利範圍第1至11項中任一項之接著膜之硬化物層； 其特徵為：該第1端子之寬為3μm以上100μm以下，該第1端子具有被覆端子表面之至少一部分之低熔點之金屬組成物，令該第1端子之寬為A、該金屬組成物之寬為B時，滿足0.6<A/B<1.4，B滿足2μm以上170μm以下，相鄰之第1端子彼此擁有之金屬組成物間之距離為3μm以上60μm以下。 A cured product of a laminate comprising: an electronic component having a plurality of first terminals on a surface; a circuit component having a plurality of second terminals corresponding to the first terminal; and a state of being interposed between the electronic component and the circuit component The hardened layer of the adhesive film of any one of the first to eleventh patents; The first terminal has a width of 3 μm or more and 100 μm or less, and the first terminal has a low melting point metal composition covering at least a part of the surface of the terminal, and the width of the first terminal is A, and the metal composition is When the width is B, 0.6<A/B<1.4 is satisfied, B is 2 μm or more and 170 μm or less, and the distance between the adjacent metal compositions of the first terminals is 3 μm or more and 60 μm or less. 如申請專利範圍第17項之疊層體之硬化物，具有：多數該電子零件、及插入於多數該電子零件與該電路零件之間之多數如申請專利範圍第1至11項中任一項之接著膜之硬化物層。 The cured product of the laminate of claim 17 having: a plurality of the electronic components, and a majority interposed between the plurality of electronic components and the circuit component, as in any one of claims 1 to 11 of the patent application. This is followed by a hardened layer of the film. 如申請專利範圍第17或18項之疊層體之硬化物，其中，該電路零件為中介片。 The cured product of the laminate of claim 17 or 18, wherein the circuit component is an interposer. 如申請專利範圍第17或18項之疊層體之硬化物，其中，該電路零件為半導體晶圓。 The cured product of the laminate of claim 17 or 18, wherein the circuit component is a semiconductor wafer. 一種疊層體之硬化物，係將如申請專利範圍第20項之疊層體之硬化物予以分切而得。 A cured product of a laminate obtained by cutting a cured product of the laminate of claim 20 of the patent application. 一種半導體裝置，包含如申請專利範圍第17至19、21項中任一項之疊層體之硬化物。 A semiconductor device comprising a cured product of a laminate according to any one of claims 17 to 19 and 21. 一種半導體裝置之製造方法，係在表面具有多數第1端子之電子零件與具有對應於該端子之多數第2端子之電路零件之間插入如申請專利範圍第1至11項中任一項之該接著膜，並將該第1端子與第2端子予以電性地連接；其特徵為：該第1端子之寬為3μm以上100μm以下，該第1端子具有被覆端子表面之至少一部分之低熔點之金屬組成物，令該第1端子之寬為A、該金屬組成物之寬為B時，滿足0.6<A/B<1.4，B滿足2μm以上170μm以下，相鄰之第1端子彼此擁有之金屬組成物間之距離為3μm以上60μm以下。 A method of manufacturing a semiconductor device in which an electronic component having a plurality of first terminals on a surface and a circuit component having a plurality of second terminals corresponding to the terminal are inserted as in any one of claims 1 to 11 Next, the film is electrically connected to the first terminal and the second terminal. The width of the first terminal is 3 μm or more and 100 μm or less. The first terminal has a low melting point of at least a part of the surface of the covered terminal. In the metal composition, when the width of the first terminal is A and the width of the metal composition is B, 0.6<A/B<1.4 is satisfied, and B satisfies 2 μm or more and 170 μm or less, and the metal adjacent to the first terminal is owned by each other. The distance between the compositions is 3 μm or more and 60 μm or less.
TW103107944A 2013-03-07 2014-03-07 Adhesive film, dicing-sheet-integrated adhesive film, back-grind-tape-integrated adhesive film, back-grind-tape and dicing-sheet integrated adhesive film, laminate and cured article thereof, semiconductor device, and method of producing semiconductor dev TWI583766B (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
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TWI771376B (en) * 2017-04-11 2022-07-21 日商琳得科股份有限公司 Separation device and separation method
TWI778070B (en) * 2017-06-01 2022-09-21 日商昭和電工材料股份有限公司 Use of tape for semiconductor processing and method for manufacturing semiconductor device
TWI803157B (en) * 2021-12-03 2023-05-21 南亞科技股份有限公司 Semiconductor device with alignment marks and method for fabricating the same

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* Cited by examiner, † Cited by third party
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JP6174292B1 (en) * 2016-04-05 2017-08-02 リンテック株式会社 Sheet for manufacturing three-dimensional integrated multilayer circuit and method for manufacturing three-dimensional integrated multilayer circuit
KR102571295B1 (en) * 2016-04-05 2023-08-25 린텍 가부시키가이샤 Sheet for manufacturing a three-dimensional integrated laminated circuit and method for manufacturing a three-dimensional integrated laminated circuit
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JP6670177B2 (en) * 2016-05-30 2020-03-18 日東電工株式会社 Die bond film, dicing die bond film, and method of manufacturing semiconductor device
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US10517958B2 (en) 2016-10-04 2019-12-31 Zymeworks Inc. Compositions and methods for the treatment of platinum-drug resistant cancer
JP7077529B2 (en) * 2017-04-12 2022-05-31 大日本印刷株式会社 How to manufacture adhesive sheet sets and articles
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JP7282076B2 (en) * 2018-03-23 2023-05-26 リンテック株式会社 Film adhesives and sheets for semiconductor processing
KR102204964B1 (en) 2018-04-17 2021-01-19 주식회사 엘지화학 Adhesive composition for semiconductor circuit connection and adhesive film containing the same
JP7214364B2 (en) * 2018-05-01 2023-01-30 株式会社ディスコ Wafer processing method
JP2022506877A (en) * 2018-11-09 2022-01-17 ピーアイ・アドバンスド・マテリアルズ・カンパニー・リミテッド Polyimide composite film with improved adhesive strength to metal layer and method for manufacturing it
KR102303632B1 (en) * 2018-11-09 2021-09-23 피아이첨단소재 주식회사 Polyimide Composite Film Having Improved Surface Adhesive Strength with Metal layer and Method for Preparing the Same
CN109500873B (en) * 2018-12-26 2024-02-20 广东沃德精密科技股份有限公司 Cutting and shaping machine for diaphragm
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JP6885521B1 (en) * 2019-07-10 2021-06-16 大日本印刷株式会社 Adhesive film for metal terminals, metal terminals with adhesive film for metal terminals, power storage devices using the adhesive film for metal terminals, and methods for manufacturing power storage devices
JPWO2021075207A1 (en) * 2019-10-16 2021-04-22

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69728022T2 (en) * 1996-12-18 2004-08-12 Canon K.K. A method of manufacturing a semiconductor article using a substrate with a porous semiconductor layer
JPH10189608A (en) * 1996-12-27 1998-07-21 New Japan Radio Co Ltd Formation of solder bump
JPH10209210A (en) * 1997-01-20 1998-08-07 Sharp Corp Semiconductor device, its manufacture, and its inspection method
MY144479A (en) * 2000-01-19 2011-09-30 Hitachi Chemical Co Ltd Adhesive film for semiconductor, lead frame attached with adhesive film for semiconductor and semiconductor device using the same
CN100509984C (en) * 2001-11-16 2009-07-08 日立化成工业株式会社 Film-shaped adhesive for circuit connection
JP2006253185A (en) * 2005-03-08 2006-09-21 Toray Ind Inc Polyimide film, heat-resistant resin laminated film using the same, and laminated film with metallic layer
JP2008024900A (en) * 2006-07-25 2008-02-07 Sumitomo Bakelite Co Ltd Benzoxazole precursor, resin composition and coating varnish, resin film, and semiconductor device using the same
JP4943959B2 (en) * 2007-07-04 2012-05-30 パナソニック株式会社 Semiconductor device
JP4801127B2 (en) * 2008-09-01 2011-10-26 日東電工株式会社 Manufacturing method of dicing die-bonding film
JP2011066167A (en) * 2009-09-16 2011-03-31 Sumitomo Bakelite Co Ltd Film for forming spacer, method for manufacturing semiconductor wafer bonded body, semiconductor wafer bonded body, and semiconductor device
JP5515811B2 (en) * 2010-02-05 2014-06-11 日立化成株式会社 Manufacturing method of semiconductor device and adhesive sheet for connecting circuit member
JP5367656B2 (en) * 2010-07-29 2013-12-11 日東電工株式会社 Flip chip type film for semiconductor back surface and use thereof
JP2012109481A (en) * 2010-11-19 2012-06-07 Toray Ind Inc Method of manufacturing semiconductor device and semiconductor device
TWI609917B (en) * 2011-05-31 2018-01-01 Ajinomoto Co., Inc. Resin composition
JP5573896B2 (en) * 2012-08-01 2014-08-20 住友ベークライト株式会社 Film for semiconductor, method for manufacturing semiconductor device, and semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI771376B (en) * 2017-04-11 2022-07-21 日商琳得科股份有限公司 Separation device and separation method
TWI778070B (en) * 2017-06-01 2022-09-21 日商昭和電工材料股份有限公司 Use of tape for semiconductor processing and method for manufacturing semiconductor device
TWI803157B (en) * 2021-12-03 2023-05-21 南亞科技股份有限公司 Semiconductor device with alignment marks and method for fabricating the same
US11756893B2 (en) 2021-12-03 2023-09-12 Nanya Technology Corporation Semiconductor device with alignment marks and method for fabricating the same

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JP2016054304A (en) 2016-04-14

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