JP4943959B2 - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device capable of obtaining the predetermined electrical characteristic in the semiconductor packaged under a satisfactory junction. <P>SOLUTION: A substrate 2 and the semiconductor 1 are press-contacted and electrically jointed through a substrate electrode 2A and a semiconductor electrode 3, and the semiconductor device is manufactured by adhering and sealing between the substrate 2 and the semiconductor 1 by an adhesive-sealing material 4. At least one assembly of the substrate electrode 2A and the semiconductor electrode 3 are jointed while one or the both of the substrate electrode 2A and the semiconductor electrode 3 have a press-contacting surface 2A-1 slanted orthogonally to the direction of the press-contact. <P>COPYRIGHT: (C)2009,JPO&amp;INPIT

Description

  The present invention relates to a printed circuit board for electronic circuits (referred to as a “substrate” as a representative example in the claims and the present specification, and other components on which an interposer or an electronic component is mounted, etc.) A semiconductor device in which an electronic component such as a semiconductor represented by an IC chip or a surface acoustic wave (SAW) device is mounted on a substrate in a single state (a bare IC in the case of an IC). It is.

  Nowadays, electronic circuit boards are used in various products, their performance is improved day by day, and the frequencies used on the circuit boards are also increasing. Corresponding to this, flip chip mounting, in which impedance is lowered by mounting an IC as a bare flip chip without a package, is a mounting method suitable for recent electronic devices using high frequencies. In addition, the flip chip mounting is strongly demanded from the trend of thinning and miniaturization, which is steadily advancing as the number of portable devices increases. However, with such a bare mounting method, an IC mounted on a circuit board, an IC mounted on an electronic device or a flat panel display is easily damaged, and defective products are mixed in the mounted IC.

  For this reason, CSP (Chip Size Package), which has been provided in a thinner and smaller size, and BGA (Ball Grid Array), which has become thinner, smaller, and more densely integrated, replace flip-chips. It has come to be used.

  FIG. 17 shows a conventional example 1, which employs a method of using an anisotropic conductive adhesive layer 81 (see, for example, Patent Document 1) to join the semiconductor 86 to a liquid crystal display 84 as a substrate. . The anisotropic conductive adhesive layer 81 is obtained by adding a conductive fine piece 82 to an insulating resin 83 to provide conductivity only in the thickness direction. As shown in FIG. 17 (A), the mounting method using this is such that the anisotropic conductive adhesive layer 81 bonded to the separator 85 is peeled off from the separator 85, and the liquid crystal display as shown in FIG. 17 (B). Then, the semiconductor 86 is pressed while being heated, and the anisotropic conductive adhesive layer 81 is made to conform to both surfaces of the semiconductor 86 and the liquid crystal display 84 and is cured. As a result, the semiconductor 86 is bonded and fixed on the liquid crystal display 84 via the anisotropic conductive adhesive layer 81 and is sealed between the liquid crystal display 84 and has a protruding shape made of facing Au or the like. The semiconductor electrode 87 and the substrate electrode 88 are electrically connected by the conductivity in the thickness direction of the anisotropic conductive adhesive layer 81, and in the region where the semiconductor electrode 87 and the substrate electrode 88 do not face each other, the semiconductor 86. The side and the liquid crystal display 84 side are not electrically connected.

  In addition, as a conventional example 2, mounting is mainly performed using a UV curable resin that does not include conductive fine particles. In such mounting, a UV curable resin is applied onto a substrate, and a semiconductor is pressurized while being heated, so that the UV curable resin is once softened or melted so as to fit between the semiconductor and the substrate. The process is performed by curing the UV curable resin by UV irradiation while keeping the projecting semiconductor electrodes facing each other in an electrical contact state in pressure contact with the substrate electrode. As a result, the bonding state between the semiconductor electrode and the substrate electrode is further strengthened by the attraction due to the shrinkage when the UV resin is cured, and the semiconductor and the substrate are bonded together, and the both are sealed.

Further, as Conventional Example 3, mounting is also performed using an adhesive film that does not include conductive fine pieces. Such mounting is performed by applying pressure while heating a semiconductor on which a protruding electrode is not leveled after an adhesive film is attached to a substrate. As a result, the semiconductor is leveled by protruding semiconductor electrodes that are not leveled through the adhesive film and press-contacting the substrate electrode, and the semiconductor electrode is brought into an electrically bonded state. In this leveled bonded state, the semiconductor film is bonded to the substrate. At the same time, the gap between the two is sealed.
Japanese Examined Patent Publication No. 62-6652

  However, the present inventor has experienced that bonding failure occurs by any of the above mounting methods, and in particular, the semiconductor 86 may not obtain predetermined electrical characteristics. As schematically shown in FIG. 16, the semiconductor 101 and the semiconductor electrode 103 of the substrate 102 and the substrate electrode 105 are mounted on the semiconductor 101 while being pressed against the substrate 102 on the bonding stage 112 by the pressure head 111. This is because a pressing force F (shown in a state of acting on the semiconductor 101) perpendicular to the semiconductor 101 and the substrate 102 is exerted on the semiconductor 101 and the substrate 102 at the pressing position. Such a pressure contact force F causes a residual stress σ at one or both of the semiconductor electrode 87 and the junction between the substrate electrodes 88 and at one or both of the semiconductor 101 and the substrate 102 and causes a bonding failure.

  Further, in today's miniaturized IC chips, the crystal structure is distorted by the residual stress σ, so that the current for operating the transistors in the IC chip fluctuates, which causes transistor characteristic fluctuations and a predetermined electric current. The characteristics may not be obtained.

  An object of the present invention is to provide a highly reliable semiconductor device in which predetermined electrical characteristics can be obtained in a semiconductor mounted on the basis of sufficient electrical bonding.

To achieve the above object, a semiconductor device of the present invention includes a semiconductor, a substrate, a semi-conductor electrode formed on the semiconductor, and the board electrode on the substrate that has been engaged against the semiconductor electrode, An adhesive / sealing material located between the semiconductor and the substrate, and a seal layer located on a surface different from the surface where the semiconductor is located on the substrate, wherein the portion of the substrate without the seal layer is inclined is allowed at the inclined surface is inclined, and that it has bonding the semiconductor electrode and the substrate electrode and feature.

In such a configuration, semi-conductor electrode and the substrate electrode of the semiconductor and the substrate, at the inclined surface that is the tilt of the substrate, by each other are joined, a semi-conductor and the substrate with an adhesive-sealant while undergoing bonding and sealing in the joining process, the work rather force to the semiconductor electrode and the substrate electrodeposition machining gap, the welding direction component force, is decomposed into parallel tilt direction component force on the inclined surface of the substrate a predetermined In this case, the component force in the tilt direction does not act to cause internal stress in the bonding direction in the semiconductor and the substrate, so that the internal residual stress due to the bonding between the semiconductor and the substrate is reduced accordingly.

In the above, the semiconductor may be further bent at the inclined surface.

  In such a configuration, the semiconductor electrode and the substrate electrode, which are held in pressure contact between the semiconductor and the substrate and are electrically connected to each other, have one or both of the pressure contact surfaces facing each other. By being inclined with respect to the direction perpendicular to the direction of press contact in the mating direction, the semiconductor electrode while the semiconductor and the substrate in the press contact state are bonded / sealed in a bonded state by an adhesive / sealing material The pressure force acting perpendicularly to the pressure contact surface of the substrate electrode is decomposed into a force component in the pressure direction perpendicular to the semiconductor and the substrate and a force component perpendicular to the pressure direction parallel to the semiconductor and the substrate, but perpendicular to the pressure direction. A pair of semiconductor electrodes and substrate electrodes that are opposed to each other, in which the perpendicular force components in the pressing direction opposite to each other in the opposing direction are generated to balance the semiconductor and the substrate via the semiconductor and the substrate Since not moved, even without special measures to prevent the movement of the semiconductor and the substrate, keeping well the predetermined bonding condition, it will not loosen. In addition, although the perpendicular component force in the pressure direction contributes to maintaining the bonding state of the semiconductor electrode and the substrate electrode, it does not work to cause internal stress in the pressure direction in the semiconductor and the substrate. Stress is reduced.

In the above, the inclined surface may be a part of one side which is an end of the substrate.

In the above, an external electrode may be provided on the one side.

In the above, the seal layer may be a resist.

In the above, the semiconductor may be a memory chip, and a control chip may be bonded to the substrate at a portion where the sealing layer of the substrate is not provided.

In the above, the semiconductor device may be an SD memory card.

According to the semiconductor device of the present invention, the semiconductor and the substrate are bonded and sealed in the bonding process at the bonding position of the set of the semiconductor electrode and the substrate electrode bonded on the inclined inclined surface of the substrate. during are, the pressure contact force acting between the bonding surfaces to each other, the bonding direction component force, is decomposed into parallel tilt direction component force on the inclined surface of the substrate maintaining a predetermined bonding condition, the inclination direction component force semiconductor and Since it does not work to generate internal stress in the bonding direction on the substrate, it reduces the internal residual stress due to the bonding of the semiconductor and the substrate. It is possible to prevent the predetermined electrical characteristics from being obtained in the semiconductor, and to realize highly reliable mounting.

  Hereinafter, a semiconductor device according to an embodiment of the present invention will be described in detail with reference to the drawings for understanding of the present invention. The following embodiments are specific examples of the present invention and do not limit the items described in the technical scope of the present invention.

  The semiconductor device of this embodiment is representatively exemplified in each case, the example shown in FIG. 1, the example shown in FIG. 2, the example shown in FIG. 3, the example shown in FIG. 4, the example shown in FIG. Example shown in FIG. 7, example shown in FIG. 8, example shown in FIG. 9, example shown in FIG. 10, example shown in FIG. 11, example shown in FIG. 12, example shown in FIG. 13, example shown in FIG. 15, the semiconductor 1, 1B, 1C, 1D, the substrate 2, the plurality of semiconductor electrodes 3 formed on the semiconductor 1, and the semiconductor electrode 3 as shown in FIG. A plurality of substrate electrodes 2A on the substrate 2 that are electrically joined together with pressure contact in the V direction by a pressure applied by an actuator 13 or the like between the stage 11 and the pressure head 12 as shown in the schematic diagram of FIG. And an adhesive / sealing material 4 positioned between the semiconductor 1 and the substrate 2. The semiconductor 1 can be any of the bare IC, CSP, and BGA described above. However, the present invention is not limited to this, and includes a case where a surface acoustic wave device or the like is handled alone and is a mounting target. Moreover, although the board | substrate 2 is a printed circuit board for electronic circuits, as above-mentioned, it means to-be-mounted bodies, such as other components with which an interposer and various electronic components are mounted | worn. The adhesive / sealant 4 may be an adhesive film that does not include the previously described anisotropic conductive adhesive, UV curable resin, and conductive fine pieces, but is not limited thereto. In many cases, the semiconductor electrode 3 is a one-step or two-step protruding electrode formed by wire bonding or the like, or a so-called bump, and the substrate electrode 4 is formed flat as a part of the printed wiring.

  However, according to the present embodiment, in each of the semiconductor devices illustrated above, at least one set of the substrate electrode 2A and the semiconductor electrode 3 is perpendicular to the direction V in which one or both of the substrate electrode 2A and the semiconductor electrode 3 are pressed. A pressure contact surface 2A-1 (FIGS. 1 to 5, FIG. 7 to FIG. 15) or a pressure contact surface 3-A (FIGS. 3 and 6) inclined at an angle θ with respect to a specific direction H. It is characterized by. Therefore, for example, in order to form the inclined pressure contact surface 3-A on the semiconductor electrode 3 as in the example shown in FIGS. 3 and 6, the bump-shaped semiconductor electrode 3 called bump formed by wire bonding is used. The pressure contact surface 3-A may be inclined by cutting or pressing of the inclined surface. However, when the inclined pressure contact surface 3-A is not used, the protruding electrode is not particularly required. In addition, as in each example shown in FIGS. 1 to 5, it is preferable to process as a protruding electrode in order to form the press contact surface 2A-1 inclined from the surface of the substrate 2 on the substrate electrode 2A. In some cases, it is difficult to form the projection electrode, and after forming the protruding electrode on the flat printed wiring and the electrode by wire bonding or the like, the inclined pressure contact surface 2A-1 is formed by processing.

  As described above, one or both of the pressure contact surfaces are pressed against the direction H perpendicular to the pressure direction V as shown by the substrate electrode 2A in FIG. Or 3A), the semiconductor electrode 3 and the substrate electrode 2A, which are held in pressure contact between the semiconductor 1 and the substrate 2 and are electrically connected to each other, have their pressure contact surfaces 2A-1 (or 3A) is inclined with respect to the direction H perpendicular to the press-contact direction V, so that the semiconductor 1 and the substrate 2 in the press-contact state are bonded and sealed in the bonded state by the bond and sealing material 4. In the meantime, the pressure contact force F acting perpendicular to the inclined pressure contact surface 2A-1 (or 3A) of the semiconductor electrode 3 and the substrate electrode 2A, the pressure component F1 perpendicular to the semiconductor 1 and the substrate 2, and the semiconductor 1 and the substrate Pressure parallel to 2 and perpendicular to the pressure direction V It is decomposed into a direction perpendicular component force F2 and kept in a predetermined bonded state, and the pressure direction perpendicular component force F2 does not act to generate internal stress in the direction of pressure contact on the semiconductor 1 and the substrate 2, and accordingly, the semiconductor 1 and substrate The internal residual stress due to the pressure contact of 2 is reduced.

  As a result, the set of the semiconductor electrode 3 and the substrate electrode 2A in which the pressure contact surface 2A-1 (or both 3A) is electrically bonded with an inclination with respect to the direction H perpendicular to the direction V of the pressure contact at the time of bonding. At a certain bonding position, while the semiconductor 1 and the substrate 2 are bonded and sealed in the pressure contact state, the pressure contact force F acting perpendicularly to the pressure contact surfaces 2A-1 (or 3A) is applied to the semiconductor 1 and the substrate. 2 and a pressure direction perpendicular component force F2 parallel to the semiconductor 1 and the substrate 2 and perpendicular to the pressure direction V to be kept in a predetermined joined state. Since the internal residual stress due to the pressure welding of the semiconductor 1 and the substrate 2 is reduced by the amount that does not cause the internal stress in the pressure welding direction to occur in the semiconductor 1 and the substrate 2, it is applied to a portion that is weak to the internal residual stress of the semiconductor 1 and the substrate 2. Caused poor bonding. , It is possible to prevent such as predetermined electric characteristics can not be obtained in a semiconductor 1, realizes a highly reliable mounting. Further, by applying only to a portion that is weak against the residual internal stress of the semiconductor 1 or the substrate 2, unnecessary labor for forming the pressure contact surface 2A-1 (or 3A) can be saved, and the component force F2 perpendicular to the pressure direction is unnecessary. As a result, the semiconductor 1 that is only held by being sucked and held by the pressure head 12 moves and is displaced, specifically, an electrode displacement in which the position of the semiconductor electrode 3 is displaced with respect to the substrate electrode 2A. It is easy to prevent. The substrate 2 is easy to fix the position and does not cause a problem.

  In the example shown in FIGS. 1A and 2, in particular, there are a plurality of sets of the substrate electrode 2 </ b> A and the semiconductor electrode 3 having the inclined pressure contact surface 2 </ b> A- 1 (or 3 </ b> A) and bonded to each other, In the pairs facing each other, the pressure contact surfaces 2A-1 (or 3A) are inclined toward the same side in the facing direction, that is, toward the right side in the drawing. For this reason, the pressure component perpendicular to the welding direction F2 is generated toward the same side, and it is easy to move the semiconductor 1 to the right side of the figure, but the movement can be prevented by adjusting the inclination angle θ with respect to the direction H to a small value. it can. However, if the angle θ is too small, the pressure direction perpendicular component force F2 becomes small and the pressure direction component force F1 becomes too large, so that the bonding failure due to the residual internal stress at the time of pressure welding of the semiconductor 1 and the substrate 2 and predetermined electrical characteristics are caused. It becomes a cause that cannot be obtained.

  Therefore, the present inventor conducted an experiment on the relationship between the tilt angle θ and the misalignment at the junction pitch of 80 μm and the semiconductor (IC) characteristic failure. The results are shown in Table 1 below.

  Table 1 shows the positions at which 100 semiconductors 1 are mounted at each angle with the inclination angle θ set to seven types of 1 °, 5 °, 10 °, 30 °, 45 °, 60 °, and 80 °. The number corresponding to the deviation or characteristic failure is shown. One misalignment occurs from 10 °, 5 at 30 °, 7 at 45 °, and 10 at 60 °, which are somewhat more profitable. On the other hand, at 80 °, 30 pieces were not practically used. Further, ten characteristic defects occurred at 1 ° and could not withstand practical use, but at 5 °, one defect was sufficient and could be practically used, and did not occur at 10 ° or more. When this is comprehensively evaluated, the effective range of the embodiment of the present invention is 5 ° to 60 °. However, from the standpoint that an internal defect that cannot be seen and difficult to inspect is an important defect, the effective range is 10 ° to 60 °. Well, considering the profitability sufficiently, it is more preferable that the angle is 10 ° to 30 °. However, it is not limited to this. In other examples, the same result as above can be obtained.

  The example shown in FIG. 2 employs, in particular, an adhesive / sealing material 4 of the example shown in FIG. 1 containing 30 to 70% of an inorganic filler 9. Thereby, the adhesive / sealing material 4 reduces the stress caused by the temperature change and reduces the influence of the stress on the semiconductor 1. Therefore, the characteristic change due to the internal stress of the semiconductor 1 can be suppressed and the life can be increased.

  In the example shown in FIG. 3, the substrate electrode 2 </ b> A and the semiconductor electrode 3 are joined together with pressure contact surfaces 2 </ b> A- 1 and 3 </ b> A inclined from the beginning. As a result, a sufficiently large joining area can be obtained without deformation on the semiconductor electrode 3 side or the like as shown in FIG. 1B due to pressure welding, so that even if the pressure welding force F is reduced, bonding failure hardly occurs. Even the angle of 5 ° can be the more preferable range.

  In the example shown in FIG. 3, electrical bonding is further performed by interposing the conductive fine pieces 5 between the press contact surfaces 2A-1 and 3A inclined from the beginning of the substrate electrode 2A and the semiconductor electrode 3. Accordingly, even if the pressure F is further reduced, the inclination angle θ of the inclined pressure contact surfaces 2A-1 and 3A can be further reduced as much as the electrical joining efficiency can be increased. This is suitable for preventing misalignment of the semiconductor 1 without impairing the high reliability of bonding. Therefore, the angle θ smaller than 5 ° can fall within the more preferable range.

  In the example shown in FIG. 4, the example shown in FIG. 5, and the example shown in FIG. 6, the pair of the semiconductor electrode 3 and the substrate electrode 2 </ b> A joined with the inclined pressure contact surfaces 2 </ b> A- 1 and 3 </ b> A are connected to each other. In the space between the opposing groups, in the space between the semiconductor 1 and the substrate 2, the inward or outward directions opposite to each other in the opposing direction are generated, and the pressure direction perpendicular component force F <b> 2 perpendicular to the pressure direction V and opposite to each other is generated. It is inclined in the direction to make it. As a result, in the pair of the semiconductor electrode 3 and the substrate electrode 2A that are joined to each other, the pressure direction perpendicular component force F2 generated in the opposite directions is balanced via the semiconductor 1 and the substrate 2 to the semiconductor 1 and the substrate 2 2 is not moved. Therefore, even without special measures for preventing the movement of the semiconductor 1 and the substrate 2, the predetermined bonding state is maintained well, and this does not loosen during the bonding / sealing. The displacement 1 of the semiconductor 1 with respect to the substrate 2 is reliably prevented by increasing the inclination angle θ of the pressure contact surface 2A-1 or 3A and reliably preventing poor bonding due to the residual stress during pressure welding and inability to obtain predetermined electrical characteristics. This can also prevent the manufacturing yield of semiconductor devices. Therefore, the position shift hardly occurs, and even the angle θ of 60 ° or more can fall within the more preferable range. However, it is necessary to remove a large angle θ that causes deformation of one or both of the substrate electrode 2A and the semiconductor electrode 3 to be pressed in a direction perpendicular to the pressing direction V to cause escape joint failure.

  The effect of preventing misalignment due to the balance of the mutually perpendicular bonding direction perpendicular component forces F2 is such that the pair of substrate electrode 2A and semiconductor electrode 3 in which the opposite direction perpendicular component forces F2 are opposite to each other are generated. In addition, even if there is a set of the substrate electrode 2A and the semiconductor electrode 3 joined with a pressure contact surface parallel to the direction H, this is exhibited.

  In particular, in the example shown in FIG. 4, the opposite pressure direction perpendicular component forces F <b> 2 opposite to each other are in a direction to apply compression to the semiconductor 1, that is, inward in a space formed between the semiconductor 1 and the substrate 2. Therefore, it is suitable for the semiconductor 1 having high compression resistance in the direction perpendicular to the pressure contact direction V, and a tensile force acts on the substrate 2. Therefore, the substrate having high tensile resistance in the direction perpendicular to the pressure direction V. 2 is suitable.

  On the other hand, in the example shown in FIG. 5 and the example shown in FIG. 6, the pressure direction perpendicular component forces F <b> 2 that are opposite to each other are formed in the direction in which the semiconductor 1 is pulled due to its balance, that is, between the semiconductor 1 and the substrate 2. Is suitable for the semiconductor 1 having a high tensile resistance in a direction perpendicular to the pressure direction V, and a compressive force is applied to the substrate 2. It is suitable for the substrate 2 having a high compression resistance.

  The selection of the compression and tension balance method of these mutually perpendicular joining direction perpendicular component forces F2 is selected when the compression resistance and the tensile resistance are different depending on the position and orientation of the semiconductor 1 and the substrate 2, respectively. Partially different selections can be made to suit the compressibility and tensile resistance.

  In the example shown in FIG. 7, the substrate electrode 2 </ b> A is formed between the semiconductor 1 and the substrate 2 with respect to the direction perpendicular to the pressure contact direction V due to the warped shape of the concave surface on the other surface side of the substrate 2. Positioned so as to face each other with an inclined pressure contact surface 2A-1 due to an inclination with respect to a direction perpendicular to the pressure contact direction V, which is outward or inward in space, and convex outward in the illustrated example. The semiconductor electrode 3 is joined. As a result, the plurality of substrate electrodes 2 </ b> A positioned opposite to each other on the substrate 2 face outward (in a space formed between the semiconductor 1 and the substrate 2 in a convex (or concave) warped shape of the substrate 2 ( In addition, the semiconductor electrode 3 is bonded to the semiconductor electrode 3 with the inclined pressure contact surface 2A-1 by the inclination with respect to the direction perpendicular to the pressure contact direction V which is inward), and the semiconductor 1 and the substrate 2 are bonded in a pressure contact state. The pressure F acting perpendicularly to the pressure contact surface 2A-1 during the adhesion / sealing by the sealing material 4 is applied to the pressure direction component F1 perpendicular to the semiconductor 1 and the space parallel to the semiconductor 1 Are separated into pressure contact direction perpendicular component forces F2 that face each other outward (and inward) and balance each other in opposite directions, and are kept in a predetermined bonding state with the semiconductor electrode 3, which does not loosen. . In addition, since the perpendicular component F2 in the pressure direction does not act to cause internal stress in the pressure direction V on the semiconductor 1 and the substrate 2, the internal residual stress due to pressure contact between the semiconductor 1 and the substrate 2 is reduced accordingly. In particular, the inclination of the pressure contact surface 2A-1 of the substrate electrode 2A is due to the warped shape of the substrate 2, and the semiconductor electrode 3 or the substrate electrode 2A has a special form with an inclination with respect to the surface of the semiconductor 1 or the substrate 2. It is not necessary to form the substrate 2 and the substrate 2 is warped in advance. However, the warped shape of the substrate 2 is also supported when the semiconductor 2 is pressed by supporting the substrate 2 with the convex support surface 11a as shown in the figure. By using the warp deformation, the trouble of warping the substrate 2 in advance can be omitted. The warped shape of the substrate 2 is fixed by adhesion / sealing by the adhesion / sealing material 4.

  In the example shown in FIG. 8, the semiconductors 1 and 1B are mounted on both the convex surface side and the concave surface side of the warped substrate 2, and the substrate electrodes 2A facing each other on the convex surface are formed between the semiconductor 1 and the substrate 2. In this space, the substrate electrode 2A is inclined outward and joined to the semiconductor electrode 3 to generate a perpendicular force F2 in the press-contact direction that pulls the semiconductor 1 at the time of joining. 2 is inclined inwardly in the space formed between the semiconductor electrode 3B and the semiconductor electrode 3B and joined to the semiconductor electrode 3B to generate a pressure component perpendicular to the pressure direction F2 that compresses the semiconductor 1 at the time of bonding. Therefore, the semiconductor 1 is suitable for those having high tensile resistance, and the semiconductor 1B is suitable for those having high compression resistance. This case is also realized by using the substrate 2 warped in advance, but the warped shape of the substrate 2 is also when the semiconductor 1 is pressed against the support surface substrate 2 that is convex upward as in the example shown in FIG. By being caused by warping deformation, it is possible to omit the trouble of warping the substrate 2 in advance, and the semiconductor 1B may be mounted after the semiconductor 1 is mounted.

  In the example shown in FIG. 9, the first and second semiconductors 1C and 1 are mounted on both surfaces of the warped substrate 2 as in the example shown in FIG. The semiconductor electrodes 3 and 3 and the substrate electrodes 2A and 2A that are joined to each other have the same first opposing distance L1, and the semiconductor electrodes 3 and 3 and the substrate electrodes 2A and 2A that are joined to each other are the same as each other. The first opposing distance L1 region is located within the second opposing distance L2 region on the substrate 2 and has a first opposing distance L1 that faces each other. The substrate electrodes 2A, 2A that face each other and the substrate electrodes 2A, 2A that face each other with a second facing distance L2 are warped so as to be concave on the semiconductor 1C side of the substrate 2 and convex on the semiconductor 1 side. On the concave side, it is A contact face 2A-1 which is inclined such that the inwardly facing direction each other in the space between the opposite semiconductor 1C and the substrate 2 to each other is joined to the semiconductor electrode C. On the convex side, a semiconductor electrode having a semiconductor contact electrode 2A-1 inclined so as to face outward in the space between the semiconductor 1C and the substrate 2 opposite to each other in a direction opposite to the direction perpendicular to the pressure contact direction V. 3 is joined. As in the case of the example of FIG. 8, this is realized by the substrate 2 having a warp shape in advance, but when either the first or second semiconductor 1 or 1C of the substrate 2 is mounted, or those By using the warp deformation utilizing the difference in size between the first and second opposing distances L1 and L2 when they are simultaneously pressed, it is possible to omit the time and effort of previously giving the warp shape of the substrate 2.

  In the example shown in FIG. 10, the substrate 2 is a substrate in which the side portions 2 a and 2 b facing each other having the substrate electrode 2 </ b> A have less bending resistance than the central portion between them, and are located on both sides 2 a and 2 b. The electrodes 2A are opposite to each other with respect to the direction perpendicular to the pressure contact direction V, which faces outward in the opposite direction in the space formed between the semiconductor 1 and the substrate 2 of each side 2a, 2b of the substrate 2. Due to the inclination, the semiconductor electrode 3 is joined with the inclined pressure contact surface 2A-1. Thus, the inclination of the pressure contact surface 2A-1 of the substrate electrode 2A is due to the inclination of both sides 2a and 2b of the substrate 2, and the semiconductor electrode 3 and the substrate electrode 2A are inclined with respect to the surfaces of the semiconductor 1 and the substrate 2. It is not necessary to form in a special shape, and the inclination of both sides 2a and 2b of the substrate 2 is also realized by a pre-deformation utilizing the fact that the bending resistance is smaller and easier to bend than the central part, By performing the deformation due to the pressure contact of the semiconductor 1, it is possible to omit the labor of inclining both sides 2 a and 2 b of the substrate 2 in advance. In the illustrated example, both side portions 2a and 2b of the substrate 2 have a step 14 whose thickness is smaller than that of the central portion, so that the bending resistance is smaller than that of the central portion. Further, the step 14 also makes it easy to incline the two sides 2 a and 2 b by pressing the semiconductor 1 when the substrate 2 is supported by a flat support surface. However, the present invention is not limited to this, and the difference in other factors such as the material and the internal structure may be used. Further, the step 14 is provided on the support surface side so that both sides 2a and 2b are floated and can be easily inclined during pressure welding. It has become.

  In the example shown in FIG. 11, the substrate 2 has less bending resistance than the other side 2b side, the one side 2a having the substrate electrode 2A joined to the semiconductor electrode 3 on the one side 1a of the semiconductor 1; The substrate electrode 2A on the one side 2a of the substrate 2 is inclined due to the inclination with respect to the direction perpendicular to the pressure contact direction V that is outward in the space formed between the semiconductor 1 and the substrate 2 on the one side 2a of the substrate 2. It has the press-contact surface 2A-1 and is joined to the semiconductor electrode 3. Also in this case, the inclination of the pressure contact surface 2A-1 of the substrate electrode 2A is due to the inclination of the one side 2a of the substrate 2, and the semiconductor electrode 3 and the substrate electrode 2A are inclined with respect to the surface of the semiconductor 1 and the substrate 2. It is not necessary to form in a special form, and the inclination of the one side 2a of the substrate 2 can be realized by pre-molding, but it has a lower bending resistance than the other side 2b and is easy to bend. By making the deformation by the pressure contact on the side 1a side of the semiconductor 1 used, it is possible to omit the labor of inclining the one side portion 2a of the substrate 2 in advance. In the illustrated example, one side 2a of the substrate 2 has a step 14 that decreases in thickness by the thickness of the photoresist layer 6 formed on the back surface on the other side 2b side, and the photoresist layer 6 By not having, the bending resistance becomes smaller than the other side 2b side. Further, the step 14 also makes it easy to incline the two sides 2 a and 2 b by pressing the semiconductor 1 when the substrate 2 is supported by a flat support surface. However, the present invention is not limited to this, and the difference in other factors such as the material and the internal structure may be used. Further, the step 14 is provided on the support surface side, and the one side 2a can be floated. In this example, another semiconductor 1D is also mounted in combination to form a memory card, particularly a small SD memory card (Secure Digital memory card), and a smaller mini SD memory card. On the other hand, the residual internal stress due to the inclined pressure contact surface 2A-1 is reduced at the bonding position between the semiconductor electrode 3 and the substrate electrode 2A on the weak side 1a side. Incidentally, an SD memory card usually has a length in the horizontal direction of the figure of 14.9 mm to 15.1 mm, a width of the depth dimension of the figure of 10.9 mm to 11.1 mm, and the vertical dimension of the figure. The thickness is 0.9 mm or more and 1.1 mm or less. In the case of a glass epoxy resin substrate equivalent to FR-4, the thickness of the substrate 2 is 0.1 mm, the semiconductor 1 is a memory chip, and the semiconductor 1D is a control chip, both of which have a thickness of 0.05 mm to 0.3 mm. is there. However, these dimension data also correspond to the respective substrates 2 and semiconductors 1 to 1D shown in the present embodiment.

  The example shown in FIG. 12 is different in that a seal layer 8 is provided on the back surface of the substrate 2 in place of the photoresist layer 6 shown in FIG.

  10, 11, and 12, the external electrode 7 is provided on the back surface of the one side portion 2 a using the dead space generated in the substrate 2 due to the step 14 as represented in the example shown in FIG. 13. As a result, the memory card can be made thinner.

  In the example shown in FIG. 14, a recess 15 that allows deformation of the substrate 2 is formed at a position corresponding to the substrate electrode 2 </ b> A having the inclined pressure contact surface 2 </ b> A- 1 on the support surface 11 a that supports the substrate 2. When the semiconductor electrode 3 is electrically joined with the pressure contact of the semiconductor 1 and the substrate 2 is deformed so as to be recessed along the recess 15 via the substrate electrode 2A, the substrate electrode 2A is inclined together with a part of the substrate 2 The inclined pressure contact surface 2A-1 is joined and the residual internal stress at the joining position between the substrate electrode 2A and the semiconductor electrode 3 of the semiconductor 1 is reduced. In this case as well, it can be deformed in advance, but by deforming at the time of pressure contact of the semiconductor 1, it is possible to omit the time and effort of deforming in advance.

  Also in the example shown in FIG. 15, one side 2 a of the substrate 2 is inclined at the time of bonding accompanied by the pressure contact of the semiconductor 1 using the step 14 by the photoresist layer 6 or the sealing layer 8 of the substrate 2, and is inclined to the substrate electrode 2 </ b> A. Unlike the other cases, in this example, the pressure head 10 for the pressure contact is connected to the one side 1a of the semiconductor 1 while the pressure contact surface 2A-1 is provided and bonded to the semiconductor electrode 3 on one side of the semiconductor 1. An inclined convex portion 10a is provided to incline the side, and the inclined convex portion 10a inclines one side of the semiconductor 1 as shown in the process in which the semiconductor 1 is pressed by the pressure head 10 and pressed against the substrate 2 side. By bending and deforming in this way, the amount of pressing to the substrate 2 is increased more than other portions of the semiconductor 1, and one side 2a of the substrate 2 is pushed and inclined through the substrate electrode 2A. Such bending deformation of the semiconductor 1 is made possible by recent thinning. For example, the internal stress due to bending deformation of the silicon material to an inclination of about 5 ° is a residual internal stress that becomes a problem due to the pressure contact of the semiconductor 1. Compared to Therefore, bending part of the semiconductor 1 causes the substrate 2 to bend and deform, and the electrode surface parallel to the substrate 2 of the substrate electrode 2A is used as the pressure contact surface 2A-1 in the pressure direction F1 of the pressure force F. Disassembling the pressure component in the pressure direction perpendicular component F2 is effective in reducing the residual internal stress of the semiconductor 1 by pressure welding.

  The present invention. It can be put into practical use in the technology of bonding the semiconductor to the substrate with pressure contact, bonding and sealing with adhesive / sealing material, and guaranteeing the predetermined electrical characteristics to the semiconductor mounted on the basis of sufficient bonding, It will be highly reliable.

In the first example of the semiconductor device according to the embodiment of the present invention, there are a cross-sectional view and a schematic explanatory diagram of a part of the case where the pressure contact surfaces for joining a plurality of substrate electrodes are inclined to the same side. It is sectional drawing which shows the 2nd example equivalent to the modification which changed the adhesion | attachment and sealing material of the 1st example of the same semiconductor device. In the third example of the semiconductor device, it is a partial cross-sectional view showing a case where both the substrate electrode and the semiconductor electrode are inclined and bonded via conductive fine pieces. It is sectional drawing which shows the case where the press-contact surface for joining of the several board | substrate electrode which opposes is inclined to the said opposing side in the 4th example of the same semiconductor device. In the fifth example of the semiconductor device, a cross-sectional view showing a case where the press contact surfaces of a plurality of opposing substrate electrodes are inclined in the direction opposite to the opposing side, as opposed to the fourth example. . It is sectional drawing which showed the case where the pressure-contact surface for joining of several semiconductor electrodes which oppose was inclined in the 6th example of the same semiconductor device, and the inclination was made to face the said opposing side. It is sectional drawing which shows the case where the press-contact surface for joining of several opposing board | substrate electrodes is inclined in the direction opposite to the said opposing side by the curvature shape of a board | substrate in the 7th example of the same semiconductor device. In an eighth example of the semiconductor device, semiconductors are mounted on the front and back of the substrate, and the pressure contact surfaces for bonding a plurality of opposing substrate electrodes are opposed to each other on the convex side of the substrate due to the warped shape of the substrate. FIG. 6 is a cross-sectional view showing a case in which a pressure contact surface for joining a plurality of opposing substrate electrodes is inclined in a direction opposite to the opposing side when the substrate surface is inclined on the concave side. is there. In the ninth example of the semiconductor device, pressure contact surfaces for joining a plurality of opposing substrate electrodes on the convex side of the substrate surface due to the warped shape of the substrate when semiconductors of different sizes are mounted on the front and back of the substrate Is inclined in the direction opposite to the opposing side, and the pressure contact surface for bonding a plurality of opposing substrate electrodes is inclined in the opposite direction to the opposing side on the concave substrate side. It is sectional drawing shown. In the tenth example of the semiconductor device, the central part is formed on both sides by bending deformation such as in semiconductor joining using the fact that both sides of the substrate to be bonded to the semiconductor have lower bending resistance than the central part. It is sectional drawing which shows the case where the press-contact surface for joining of several board | substrate electrodes which oppose on both sides is inclined in the direction opposite to the said opposing side. In the eleventh example of the semiconductor device, a semiconductor memory chip and a semiconductor control chip are mounted on a substrate to form a memory card, and one side of the memory chip and one side of the substrate to be joined are stepped higher than that. The pressure contact surface for bonding substrate electrodes on one side is formed by bending deformation at the time of memory chip bonding utilizing the fact that the resistance to bending is smaller than that of the other side having a photoresist layer and having a photoresist layer. It is sectional drawing which shows the case where it inclines outward in the space between board | substrates. It is sectional drawing which shows the case where it is set as the modification which provided the sealing layer instead of the photoresist layer of the 11th example in the 12th example of the same semiconductor device. It is sectional drawing which shows the case where it is set as the modification which provided the external electrode using the dead space formed by the level | step difference of the 11th, 12th example in the 13th example of the same semiconductor device. In the fourteenth example of the semiconductor device, the pressure contact surface for bonding the substrate electrode at each bonding position is obtained by local deformation occurring at each bonding position between the plurality of opposing substrate electrodes and the semiconductor electrode when the substrate is mounted on the semiconductor. It is sectional drawing which shows the case where it makes it incline to the opposite side of the side which opposes. The fifteenth example of the semiconductor device is a modification example of the bending deformation of one side of the substrate of the first to thirteenth examples, and the one side corresponding to the one side of the substrate is pressed when the semiconductor is pressed against the substrate. It is sectional drawing which shows the case where it bends and deform | transforms by positively pressing the one side part of a board | substrate via a semiconductor electrode and a board | substrate electrode. A conventional semiconductor device in which a semiconductor is press-contacted to a substrate, the substrate electrode and the semiconductor electrode are electrically bonded and held, and the substrate and the semiconductor are bonded / sealed with an adhesive / sealing material, and the pressure contact force at the time of the press-contact It is sectional drawing which shows typically the generation | occurrence | production state of the residual internal stress which arises in a semiconductor by. It is sectional drawing of the film explaining the conventional system using the adhesion | attachment and sealing film of a semiconductor device, and sectional drawing which shows the middle process of the mounting using it.

Explanation of symbols

1, 1B, 1C, 1D Semiconductor 1a One side 2 Substrate 2a One side 2b Other side 2A Substrate electrode 2A-1 Inclined pressure contact surface 3 Semiconductor electrode 3A Inclined pressure contact surface 4 Adhesive / sealing material L1 First opposing distance L2 Second facing distance

Claims (7)

Semiconductors,
A substrate,
A semiconductor electrode formed on the semiconductor;
A substrate electrode on the substrate engaged against the semiconductor electrode,
An adhesive / sealing material positioned between the semiconductor and the substrate;
A seal layer located on a different surface from the surface on which the semiconductor of the substrate is located
A semiconductor device , wherein a portion of the substrate without a sealing layer is inclined, and the substrate electrode and the semiconductor electrode are bonded to each other at the inclined inclined surface . The semiconductor device according to claim 1, wherein the semiconductor is bent at the inclined surface . The inclined surface is a semiconductor device according to claim 1 or 2, wherein a portion of one side is an end of the substrate. The semiconductor device according to claim 3 , wherein an external electrode is provided on the one side portion . The semiconductor device according to claim 1, wherein the seal layer is a resist . The semiconductor device according to claim 1, wherein the semiconductor is a memory chip, and a control chip is bonded to the substrate at a portion where the sealing layer of the substrate is not present . The semiconductor device according to claim 1, wherein the semiconductor device is an SD memory card .

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