WO2014061767A1 - Resin composition, adhesive sheet, dicing tape-integrated type adhesive sheet, back grind tape-integrated type adhesive sheet, back grind tape/dicing tape-integrated type adhesive sheet, and electronic device - Google Patents

Resin composition, adhesive sheet, dicing tape-integrated type adhesive sheet, back grind tape-integrated type adhesive sheet, back grind tape/dicing tape-integrated type adhesive sheet, and electronic device Download PDF

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Publication number
WO2014061767A1
WO2014061767A1 PCT/JP2013/078268 JP2013078268W WO2014061767A1 WO 2014061767 A1 WO2014061767 A1 WO 2014061767A1 JP 2013078268 W JP2013078268 W JP 2013078268W WO 2014061767 A1 WO2014061767 A1 WO 2014061767A1
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Prior art keywords
resin composition
mass
film
adhesive sheet
component
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PCT/JP2013/078268
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French (fr)
Japanese (ja)
Inventor
研三 前島
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住友ベークライト株式会社
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Publication of WO2014061767A1 publication Critical patent/WO2014061767A1/en

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/22—Di-epoxy compounds
    • C08G59/24—Di-epoxy compounds carbocyclic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/32—Epoxy compounds containing three or more epoxy groups
    • C08G59/3218—Carbocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62—Alcohols or phenols
    • C08G59/621—Phenols
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
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Definitions

  • the present invention relates to a resin composition, an adhesive sheet, a dicing tape integrated adhesive sheet, a back grind tape integrated adhesive sheet, a back grind tape and dicing tape integrated adhesive sheet, and an electronic device.
  • This application claims priority based on Japanese Patent Application No. 2012-230737 for which it applied to Japan on October 18, 2012, and uses the content here.
  • the electronic device performs, for example, a process of joining the electrode of the semiconductor element and the electrode of another semiconductor element, the electrode of the semiconductor element and the electrode of the substrate, or the electrode of the substrate and the electrode of another substrate using solder. Manufactured by.
  • thermosetting resin composition is poured into this gap, and then the thermosetting resin is cured to fill gaps between semiconductor elements and the like.
  • Patent Document 1 discloses a solder paste containing an epoxy resin as a main component and containing an organic acid or an organic acid salt and solder particles.
  • Patent Document 2 discloses at least one thermosetting resin selected from an epoxy resin, a phenol resin, a diallyl phthalate resin, and a benzocyclobutene resin, and a flux component.
  • a thermosetting resin sheet characterized by molding a composition containing the above into a sheet shape is disclosed.
  • the present invention relates to a resin composition, an adhesive sheet, a dicing tape integrated adhesive sheet, a back grind tape integrated adhesive sheet, a back grind tape and dicing tape integrated type, which can obtain an electronic device having high bonding reliability between electrodes and high insulation reliability.
  • An electronic device having an adhesive sheet and a cured product of the resin composition is provided.
  • the resin composition of the present invention is a film-like electrode connecting resin composition that is interposed between electrodes facing each other and electrically connects the electrodes facing each other,
  • the resin composition is (A) a polyfunctional epoxy resin having a naphthalene skeleton; (B) a compound having a phenolic hydroxyl group and a carboxyl group in one molecule; (C) a film-forming resin; It is characterized by containing.
  • the component (B) can be a compound having two or more phenolic hydroxyl groups and one or more carboxyl groups in one molecule.
  • the component (B) can be a compound having two or more phenolic hydroxyl groups in one molecule and one or more carboxyl groups directly bonded to an aromatic ring.
  • the content of the component (A) can be 1% by mass or more and 20% by mass or less with respect to the entire resin composition.
  • the content of the component (B) can be 3% by mass or more and 25% by mass or less with respect to the entire resin composition.
  • the content mass ratio [(B) / (A)] between the component (A) and the component (B) may be 0.2 or more and 16 or less.
  • the resin composition of the present invention can further contain (D) a phenol resin.
  • the adhesive sheet of the present invention has the above resin composition and a base film.
  • the dicing tape-integrated adhesive sheet of the present invention is characterized by having the above resin composition and a dicing tape.
  • the back grind tape integrated adhesive sheet of the present invention is characterized by having the above resin composition and a back grind tape.
  • the back grind tape / dicing tape-integrated adhesive sheet of the present invention is characterized by having the above resin composition and a back grind tape / dicing tape serving as both a dicing tape and a back grind tape.
  • the electronic device of this invention has the hardened
  • the resin composition (A) a polyfunctional epoxy resin having a naphthalene skeleton, (B) a compound having a phenolic hydroxyl group and a carboxyl group in one molecule; (C) a film-forming resin;
  • a resin composition adhesive sheet, a dicing tape integrated adhesive sheet, a back grind tape integrated adhesive sheet, and a back grind tape that can provide an electronic device having high connectivity between opposing electrodes and high insulation reliability.
  • An electronic device having a dicing tape-integrated adhesive sheet and a cured product of this resin composition and having high connectivity and insulation reliability is provided.
  • [Electronic device] 1 to 3 show a process in which the first substrate 110 having the electrode 111 and the second substrate 120 having the electrode 121 are bonded via the resin composition 130 to form the electronic device 100.
  • FIG. 3 in the electronic device 100, the electrode 111 formed on one surface of the first substrate 110 and the electrode 121 formed on one surface of the second substrate 120 are individually joined to each other, and the first substrate 110.
  • a resin layer 130 is filled between the first substrate 120 and the second substrate 120.
  • the resin composition used for the resin layer 130 is formed on one surface of the second substrate 120 and the electrode 111 (gold 111a / nickel 111b / copper pillar 111c) formed on one surface of the first substrate 110 as an example of the embodiment. It is a resin composition that is introduced between the electrodes 121 (solder bumps 121a / copper pillars 121b) and thermally cured after the solder bumps 111a of the electrodes 111 and the gold 121a of the electrodes 121 are joined. In other words, in the electronic device 100 finally obtained, the resin layer 130 may be formed so as to fill the gap between the first substrate 110 and the second substrate 120.
  • the second substrate 120 is a semiconductor chip.
  • the resin composition in the present invention is A film-like electrode connecting resin composition that is interposed between opposing electrodes and electrically connects the opposing electrodes, (A) a polyfunctional epoxy resin having a naphthalene skeleton; (B) a compound having a phenolic hydroxyl group and a carboxyl group in one molecule; (C) a film-forming resin; It is characterized by containing.
  • (A) a polyfunctional epoxy resin having a naphthalene skeleton is used.
  • Tg glass transition point
  • the component (A) used in the resin composition of the present invention has a naphthalene structure in the molecular structure and has a structure in which two or more glycidyl ether groups are bonded to the naphthalene ring, or these A mixture is mentioned.
  • the epoxy resin having a naphthalene skeleton is not particularly limited, and examples thereof include those represented by the following general formula (1), general formula (2), general formula (3), or general formula (4). Specific examples include those represented by structural formula (5), structural formula (6), structural formula (7), structural formula (8), and the like. Furthermore, among these, structural formula (7) and structural formula (8) are particularly preferable. Since the naphthalene ring is particularly excellent in heat resistance, the connection reliability of the semiconductor device in a high temperature atmosphere can be improved.
  • the content of the component (A) with respect to the entire resin composition is not particularly limited, but is preferably 1% by mass or more and 20% by mass or less. More preferably, it is 1 mass% or more and 17 mass% or less.
  • thermosetting resins in addition to the component (A), other thermosetting resins can be used together.
  • the thermosetting resin used here is not particularly limited, and examples thereof include epoxy resins, oxetane resins, phenol resins, (meth) acrylate resins, unsaturated polyester resins, diallyl phthalate resins, and maleimide resins.
  • an epoxy resin is preferable.
  • Epoxy resins are excellent in curability and storage stability, heat resistance of cured products, moisture resistance, chemical resistance, and the like.
  • the epoxy resin that can be contained in the resin composition of the present invention may be an epoxy resin that is solid at room temperature or an epoxy resin that is liquid at room temperature, or both of them.
  • the resin composition according to the present invention contains an epoxy resin, the degree of freedom in designing the melting behavior of the resin layer can be further increased.
  • the epoxy resin that is solid at room temperature is not particularly limited, and examples thereof include bisphenol A type epoxy resins, bisphenol S type epoxy resins, and phenol novolac type epoxy resins. Cresol novolac type epoxy resin, glycidylamine type epoxy resin, glycidyl ester type epoxy resin, trifunctional epoxy resin, tetrafunctional epoxy resin and the like. These may be used alone or in combination of two or more.
  • the epoxy resin that is liquid at room temperature is not particularly limited, and examples thereof include bisphenol A type epoxy resins, bisphenol F type epoxy resins, and phenol novolac type epoxy resins. Allylated bisphenol A type epoxy resin, modified epoxy resin, cyclohexanedimethanol diglycidyl ether and the like. These may be used alone or in combination of two or more.
  • the epoxy equivalent of the epoxy resin that is liquid at room temperature is preferably 120 to 400, more preferably 140 to 360, and still more preferably 160 to 320. Thereby, it can prevent that the shrinkage
  • (B) a compound having a phenolic hydroxyl group and a carboxyl group in one molecule is used.
  • the flux function can be imparted to the resin composition, the connectivity between the electrodes and the insulation reliability can be improved, and the resin can react with the component (A). Since it can be taken into the skeleton, it can have stable insulating properties.
  • the resin composition of this invention what has one phenolic hydroxyl group and one carboxyl group in 1 molecule can be used as said (B) component.
  • component (B) examples include 2-hydroxybenzoic acid, 3-hydroxybenzoic acid, 4-hydroxybenzoic acid, 1-hydroxy-2-naphthoic acid, 2-hydroxy-1-naphthoic acid, 3-hydroxy- Hydroxynaphthoic acids such as 2-naphthoic acid, 6-hydroxy-1-naphthoic acid, 6-hydroxy-2-naphthoic acid, 2-hydroxycinnamic acid, 3-hydroxycinnamic acid, 4-hydroxycinnamic acid, etc. Examples thereof include hydroxycinnamic acids.
  • Such a component (B) can impart a flux action to the resin composition, and even when an epoxy resin other than the component (A) or the component (A) is used in combination, an addition reaction with these epoxy resins. can do.
  • the resin composition of this invention what has two or more phenolic hydroxyl groups and one or more carboxyl groups in 1 molecule can be used as said (B) component.
  • component (B) include diphenolic acid, 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), 2,6-dihydroxybenzoic acid, Benzoic acid derivatives such as 3,4-dihydroxybenzoic acid and gallic acid (3,4,5-trihydroxybenzoic acid); 1,4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2-naphthoic acid, Examples include naphthoic acid derivatives such as 3,7-dihydroxy-2-naphthoic acid; phenolphthaline; and pamoic acid.
  • Such a component (B) can impart a flux action to the resin composition, and even when an epoxy resin other than the component (A) or the component (A) is used in combination with these epoxy resins.
  • the reaction can act as the curing agent.
  • the component (B) a compound having two or more phenolic hydroxyl groups and one or more carboxyl groups directly bonded to an aromatic ring in one molecule is used. Can do.
  • examples of such component (B) include 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), 2,6-dihydroxybenzoic acid, 3, Benzoic acid derivatives such as 4-dihydroxybenzoic acid and gallic acid (3,4,5-trihydroxybenzoic acid), 1,4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2-naphthoic acid, 3, Examples thereof include naphthoic acid derivatives such as 7-dihydroxy-2-naphthoic acid, phenolphthaline, pamoic acid and the like, and these may be used alone or in combination of two or more.
  • Such a component (B) can impart a flux action to the resin composition
  • the resin composition of the present invention can obtain a resin composition having high insulating properties and solder connectivity resulting from a flux action by using the component (A) and the component (B) in combination.
  • the content of the component (B) with respect to the entire resin composition is not particularly limited, but is preferably 3% by mass or more and 25% by mass or less. More preferably, it is 3.5 mass% or more and 20 mass% or less.
  • the mass ratio [(B) / (A)] of the component (A) and the component (B) in the resin composition is 0.2 or more and 16 or less. Preferably there is. More preferably, it is 0.5 or more and 13 or less, and particularly preferably 0.7 or more and 10 or less.
  • action of a resin composition, film formability, and a flexibility can be ensured.
  • the insulation of the resin composition after hardening, film-forming property, and a flexibility can be ensured.
  • a film-forming resin is used in the resin composition of the present invention. Thereby, a resin composition can be easily made into a film form and the electronic device excellent in connectivity and insulation reliability can be produced efficiently.
  • the film-forming resin examples include (meth) acrylic resin, phenoxy resin, polyester resin, polyurethane resin, polyimide resin, siloxane-modified polyimide resin, polybutadiene, polypropylene, styrene-butadiene-styrene copolymer, styrene-ethylene- Butylene-styrene copolymer, polyacetal resin, polyvinyl butyral resin, polyvinyl acetal resin, butyl rubber, chloroprene rubber, polyamide resin, acrylonitrile-butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer Examples include coalescence, polyvinyl acetate, and nylon.
  • (meth) acrylic resins and phenoxy resins are preferable.
  • a (meth) acrylic resin or a phenoxy resin it is possible to achieve both film formability and adhesion to a support and an adherend.
  • the film-forming resin may be used alone or in combination of two or more.
  • the (meth) acrylic resin is a polymer of (meth) acrylic acid and derivatives thereof, or a copolymer of (meth) acrylic acid and derivatives thereof with other monomers. means.
  • (meth) acrylic acid etc. it means acrylic acid or methacrylic acid.
  • acrylic resin used as the film-forming resin examples include polyacrylic acid, polymethacrylic acid, polymethyl acrylate, polyethyl acrylate, polybutyl acrylate, and poly-2-ethylhexyl acrylate.
  • Polyacrylic acid ester such as polymethyl methacrylate, polyethyl methacrylate, polybutyl methacrylate; polyacrylonitrile, polymethacrylonitrile, polyacrylamide, butyl acrylate-ethyl acrylate-acrylonitrile copolymer, Acrylonitrile-butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer, acrylonitrile-styrene copolymer, methyl methacrylate-styrene copolymer , Methyl methacrylate-acrylonitrile copolymer, methyl methacrylate- ⁇ -methylstyrene copolymer, butyl acrylate-ethyl acrylate-acrylonitrile-2-hydroxyethyl methacrylate-methacrylic acid copolymer, buty
  • an acrylic resin used as a film-forming resin by using a (meth) acrylic resin obtained by copolymerizing a monomer having a functional group such as a nitrile group, an epoxy group, a hydroxyl group, or a carboxyl group, the adhesion of the film-like resin composition to the support and adherend, and compatibility with the thermosetting resin and the like can be improved.
  • the weight average molecular weight of the acrylic resin is, for example, 1,000 or more and 1,000,000 or less, and preferably 3000 or more and 900,000 or less. When the weight average molecular weight of the acrylic resin is within the above range, the film-forming property of the resin composition can be further improved and the fluidity at the time of curing can be ensured.
  • a phenoxy resin having a number average molecular weight of 5000 to 20000 is preferable.
  • a phenoxy resin having a number average molecular weight of 5000 to 20000 is preferable.
  • the skeleton of the phenoxy resin is not particularly limited, and examples thereof include bisphenol A type, bisphenol F type, biphenyl skeleton type, and biphenol skeleton type.
  • the content of the component (C) with respect to the entire resin composition is not particularly limited, but is preferably 0.1% by mass or more and 20% by mass or less, more preferably 0. It is 2 mass% or more and 10 mass% or less.
  • the resin composition of the present invention is not particularly limited, but in addition to the above components (A) to (C), when an epoxy resin is used together with the component (A) as a thermosetting resin, it contains a curing agent. It is preferable to do.
  • curing agent should just act as a hardening
  • polyamines including aliphatic polyamines such as diethylenetriamine, triethylenetetramine, and metaxylylenediamine, aromatic polyamines such as diaminodiphenylmethane, m-phenylenediamine, and diaminodiphenylsulfone, dicyandiamide, and organic acid dihydrazide
  • Amine-based curing agents such as compounds, aliphatic acid anhydrides such as hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, aromatic acid anhydrides such as tritometic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic acid, etc.
  • Acid anhydride curing agent phenol novolac resin, cresol novolac resin, phenol aralkyl (including phenylene and biphenylene skeleton) resin, naphthol aralkyl (including phenylene and biphenylene skeleton) resin
  • Triphenol methane resin dicyclopentadiene type phenol resin, bis (mono or di t-butylphenol) propane, methylene bis (2-propenyl) phenol, propylene bis (2-propenyl) phenol, bis [(2-propenyloxy) phenyl] Methane, bis [(2-propenyloxy) phenyl] propane, 4,4 ′-(1-methylethylidene) bis [2- (2-propenyl) phenol], 4,4 ′-(1-methylethylidene) bis [ 2- (1-phenylethyl) phenol], 4,4 ′-(1-methylethylidene) bis [2-methyl-6-hydroxymethyl
  • curing agent calculates
  • the equivalent ratio (Ep / OH) of the epoxy group (Ep) of the epoxy resin to the phenolic hydroxyl group (OH) of the curing agent is preferably 0.5 to 1.5, 0.7 Is particularly preferred. By setting it as the said range, heat resistance and preservability of a film-form resin composition can be made compatible.
  • the resin composition of the present invention is not particularly limited, but in addition to the above components (A) to (C), when an epoxy resin is used together with the component (A) as a thermosetting resin, curing acceleration An agent can be contained.
  • a curing accelerator may be selected as long as it accelerates the curing reaction between the epoxy resin and the curing agent.
  • Specific examples include amine compounds such as imidazoles and 1,8-diazabicyclo (5,4,0) undecene, and phosphorus compounds such as salts of triphenylphosphine and tetra-substituted phosphonium with polyfunctional phenol compounds.
  • imidazoles and phosphorus compounds that achieve both fast curability of the film-like resin layer, storage stability, and corrosivity of the aluminum pad on the semiconductor element are preferable.
  • the content of the curing accelerator is preferably 0.001 to 10% by mass, more preferably 0.003 to 7% by mass, and 0.01 to 5% by mass with respect to the entire resin composition. % Is more preferable. By setting it as the said range, it becomes possible to maintain the balance of sclerosis
  • the resin composition of the present invention is not particularly limited, but may contain an inorganic filler in addition to the components (A) to (C).
  • an inorganic filler in addition to the components (A) to (C).
  • cured material of a film-form resin composition can be made small, and the connectivity and insulation reliability of an electronic device using this can be improved.
  • the tack force of the film-like resin composition can be more easily adjusted.
  • the peelability from the support is more suitable.
  • the adhesion to a substrate having an electrode, a semiconductor chip or the like can be made particularly excellent.
  • the inorganic filler examples include silver, titanium oxide, silica, mica and the like. Among these, silica is preferable. Moreover, although there exist crushing silica and spherical silica as a shape of a silica, spherical silica is preferable. From the viewpoint of thermal conductivity, aluminum oxide, aluminum nitride, titanium oxide, silicon nitride, boron nitride, or the like can also be used.
  • the average particle size of the inorganic filler is not particularly limited, but is preferably 0.01 ⁇ m or more and 20 ⁇ m or less, and more preferably 0.03 ⁇ m or more and 5 ⁇ m or less. By setting it as the said range, aggregation of the inorganic filler in a film-form resin composition can be suppressed, and the homogeneous resin composition without the aggregate of an inorganic filler can be obtained.
  • the content of the inorganic filler is not particularly limited, but is preferably 1 to 80% by mass, more preferably 20 to 75% by mass, and more preferably 30 to 70% by mass with respect to the entire resin composition. More preferably.
  • the resin composition of the present invention includes a coupling agent, a flux activator for enhancing the activity of a compound having a flux action, a low stress agent, an antioxidant, a leveling agent, and other resins.
  • a coupling agent for enhancing the activity of a compound having a flux action
  • a low stress agent for enhancing the activity of a compound having a flux action
  • a low stress agent for enhancing the activity of a compound having a flux action
  • a low stress agent such as antioxidant
  • a leveling agent such as antioxidant
  • a leveling agent such as compatibility, stability, workability
  • operativity such as compatibility, stability, workability
  • an inorganic filler is added to the resin composition. It can be obtained by preparing a product varnish, applying it to a support having been subjected to a peeling treatment such as a polyester sheet, removing the solvent at a predetermined temperature and drying it.
  • Examples of the solvent used for preparing the resin composition varnish include ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, DIBK (diisobutyl ketone), cyclohexanone, DAA (diacetone alcohol), benzene, xylene, and toluene.
  • ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, DIBK (diisobutyl ketone), cyclohexanone, DAA (diacetone alcohol), benzene, xylene, and toluene.
  • Aromatic hydrocarbons such as methyl alcohol, ethyl alcohol, isopropyl alcohol, n-butyl alcohol, methyl cellosolve, ethyl cellosolve, butyl cellosolve, methyl cellosolve acetate, ethyl cellosolve a
  • NMP N-methyl-2-pyrrolidone
  • THF tetrahydrofuran
  • DMF dimethylformamide
  • DBE dibasic acid ester
  • EEP - ethyl ethoxypropionate
  • DMC dimethyl carbonate
  • the thickness (average) of the film-like resin composition is not particularly limited, but is preferably about 3 to 100 ⁇ m, and more preferably about 5 to 50 ⁇ m.
  • the electronic device of the present invention is characterized by having a cured product of the above-described resin composition of the present invention.
  • An example of a method for manufacturing the electronic device 100 of the present invention will be described below.
  • the electrode 111 (gold 111a / nickel 111b / copper pillar 111c) is formed on one surface of the first substrate 110, and the electrode 121 (solder bump 121a / copper pillar 121b) is similarly formed on the second substrate. 120 is formed on one surface.
  • the solder used for joining the electrode 111 and the electrode 121 is not particularly limited and is selected from the group consisting of tin, silver, lead, zinc, bismuth, indium and copper. And alloys containing at least two or more of them.
  • the melting point of the solder is 100 to 350 ° C.
  • a film-like resin composition 130 is introduced between the electrode 111 of the first substrate 110 and the electrode 121 of the second substrate 120, and as shown in FIG.
  • the resin layer 130 is filled between the first substrate 110 and the second substrate 120 while being melt-bonded to the electrode 121 of the second substrate 120.
  • the resin composition 130 is laminated by sandwiching the resin composition 130 between the electrode 111 of the first substrate 110 and the electrode 121 of the second substrate 120, and melt-bonding the electrode 111 and the electrode 121.
  • the material 130 melts and spreads, and the space between the first substrate 110 and the second substrate 120 can be filled with the resin composition 130 while soldering.
  • Solder bonding may be performed at a temperature equal to or higher than the melting point of the solder, for example, 130 to 380 ° C.
  • the resin composition 130 is thermoset. Thereby, the electronic device 100 can be obtained.
  • the heating temperature may be any temperature as long as it is equal to or higher than the curing temperature of the resin composition 130, and is appropriately selected, but is usually 100 to 250 ° C, preferably 150 to 200 ° C.
  • the heating time is appropriately selected depending on the type of the resin composition 130, but is usually 0.5 to 8 hours, preferably 1 to 3 hours.
  • the resin composition 130 when it is cured, it may be pressurized.
  • the pressurization is preferably 0.1 MPa or more and 10 MPa or less, more preferably 0.5 MPa or more and 5 MPa or less. Thereby, generation
  • the pressurization is preferably performed using a fluid, and examples thereof include gases such as nitrogen gas, argon gas, and air. Air is preferable in terms of inexpensiveness, but nitrogen is preferable from the viewpoint of suppressing oxidation of the resin composition.
  • a processing object to be heated is placed in a pressure vessel, and then the pressurized fluid is introduced into the pressure vessel and added.
  • a method of heating an object to be processed while pressing more specifically, the object to be processed is placed in a pressure oven, and processing is performed in a pressure oven while introducing a gas for pressurization into the pressure oven. The method of heating a target object is mentioned.
  • the adhesive sheet of the present invention is characterized by having the above-described resin composition for electrode connection of the present invention (hereinafter also referred to as a resin composition) and a base film.
  • FIG. 4 shows an embodiment of the adhesive sheet of the present invention.
  • an adhesive sheet 200 has a structure in which a resin composition 201 is formed on a base film 202.
  • the form of the adhesive sheet of the present invention is not limited to that shown in FIG. 4.
  • the surface of the resin composition on the surface of the adhesive film opposite to the base film is laminated.
  • the base film 202 functions as a base layer (support layer) of the adhesive film when the adhesive sheet 200 (adhesive film) is laminated on the wafer surface provided with a plurality of individual electrodes and individual circuits, for example. .
  • the material of the base film is not particularly limited.
  • the adhesive sheet of the present invention is obtained by coating the resin composition varnish on the base film, and then drying the resin composition varnish at a predetermined temperature to an extent that does not substantially contain a solvent. Can do. And it can also be set as the form which laminated
  • the dicing tape-integrated adhesive sheet of the present invention includes the adhesive sheet of the present invention and a dicing tape.
  • FIG. 5 shows an embodiment of the dicing tape-integrated adhesive sheet of the present invention.
  • a dicing tape integrated adhesive sheet 210 has a structure in which an adhesive sheet 211 is formed on a dicing tape 213. In the form shown in FIG.
  • the dicing tape 213 is composed of two layers, a base layer 213 a of the dicing tape and an adhesive layer 213 b of the dicing tape, and the adhesive layer 213 b of the dicing tape and the adhesive sheet 211 are in contact with each other. Are stacked.
  • the form of the dicing tape-integrated adhesive sheet of the present invention is not limited to that shown in FIG. 5, for example, a form having an intervening layer between the adhesive layer 213 b of the dicing tape and the adhesive sheet 211.
  • the adhesive layer of the dicing tape is preferably higher in adhesiveness than the intervening layer.
  • the adhesive force of the adhesion layer of the dicing tape with respect to an intervening layer and a base material layer becomes larger than the adhesive force of the intervening layer with respect to the adhesive sheet 211. Therefore, in an electronic component manufacturing process, for example, in an electronic component manufacturing process such as a semiconductor chip pickup process, peeling occurs at a desired interface (that is, an interface between an intervening layer and an adhesive sheet) that should cause peeling. Can do.
  • the dicing tape used for the dicing tape-integrated adhesive sheet of the present invention can be any dicing tape that is generally used.
  • the constituent material of the base material layer 213a of the dicing tape is not particularly limited.
  • polyethylene, polypropylene, polybutene, polybutadiene, polymethylpentene, polyvinyl chloride, vinyl chloride copolymer, polyethylene terephthalate, polybutylene terephthalate, polyurethane examples include ethylene vinyl acetate copolymer, ionomer, ethylene / (meth) acrylic acid copolymer, ethylene / (meth) acrylic acid ester copolymer, polystyrene, vinyl polyisoprene, polycarbonate, polyolefin, etc.
  • One kind or a mixture of two or more kinds can be used.
  • the average thickness of the substrate layer 213a of the dicing tape is not particularly limited, but is preferably 5 to 200 ⁇ m, more preferably about 30 to 150 ⁇ m.
  • the adhesive sheet is securely supported, and the handling of the dicing tape integrated adhesive sheet is facilitated, and the dicing tape integrated adhesive sheet is appropriately By curving, it is possible to improve the adhesion between the adhesive sheet and the adherend having the electrode.
  • a manufacturing method of the base material layer 213a of a dicing tape Common molding methods, such as a calendar method and an extrusion molding method, can be used.
  • a functional group that reacts with the material constituting the adhesive layer 213b such as a hydroxyl group or an amino group, is exposed on the surface of the base material layer 213a.
  • the surface of the base material layer 213a is preferably surface-treated with a corona treatment or an anchor coat.
  • the constituent material of the adhesive layer 213b of the dicing tape is not particularly limited, but for example, a material composed of a resin composition containing an acrylic adhesive, a rubber adhesive, or the like can be used.
  • the acrylic pressure-sensitive adhesive include resins composed of (meth) acrylic acid and esters thereof, (meth) acrylic acid and esters thereof, and unsaturated monomers copolymerizable therewith (for example, vinyl acetate, Copolymers with styrene, acrylonitrile, etc.) are used. Two or more kinds of these copolymers may be mixed.
  • the copolymer with 1 or more types chosen from is preferable. Thereby, it becomes easy to control the adhesiveness and adhesiveness with a partner (for example, the above-described intervening layer, base material layer, etc.) to which the adhesive layer of the dicing tape adheres.
  • the average thickness of the pressure-sensitive adhesive layer 213b of the dicing tape is not particularly limited, but is preferably about 1 ⁇ m to 100 ⁇ m, and more preferably about 3 to 20 ⁇ m.
  • the average thickness of the pressure-sensitive adhesive layer 213b of the dicing tape is within the above range, the shape following property of the pressure-sensitive adhesive layer 213b of the dicing tape is ensured, and the adhesiveness of the adhesive film such as a semiconductor wafer to the contacted object can be further increased. it can.
  • the said dicing tape can manufacture by apply
  • the adhesive layer 213b may be separately manufactured by coating the adhesive layer 213b on the base material for the adhesive layer 213b and then transferring the adhesive layer 213b on the base material layer 213a of the dicing tape.
  • the intervening layer may be further coated on the adhesive layer 213b, or the intervening layer is separately produced by laminating a material coated on the intervening layer base material.
  • the dicing tape-integrated adhesive sheet of the present invention includes, for example, a dicing tape having a base material layer 213a, an adhesive layer 213b, and an intervening layer, and an adhesive sheet (resin composition + base film) of the present invention. It can also be obtained by laminating such that the intervening layer and the adhesive sheet are in contact with each other.
  • the back grind tape-integrated adhesive sheet of the present invention includes the adhesive sheet of the present invention and a background tape.
  • the said back grind tape is not specifically limited, What has the adhesive layer formed in the single side
  • PET polyethylene terephthalate
  • PE polyethylene
  • PP polypropylene
  • EVA ethylene-vinyl acetate copolymer
  • the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer is not particularly limited, but is preferably composed of a pressure-sensitive adhesive containing a polymerizable oligomer and having a pressure-sensitive adhesive force lowered by polymerization crosslinking.
  • a pressure-sensitive adhesive for example, an acrylic acid alkyl ester-based and / or methacrylic acid alkyl ester-based polymerizable polymer having a radiation-polymerizable unsaturated bond in the molecule, and a radiation-polymerizable polyfunctional Examples thereof include a photocurable pressure-sensitive adhesive comprising an oligomer or a monomer as a main component.
  • the polymerizable polymer is, for example, a compound having a functional group that reacts with the functional group in the molecule and a radiation-polymerizable unsaturated bond, in advance, by synthesizing a (meth) acrylic polymer having a functional group in the molecule. It can obtain by making it react.
  • the (meth) acrylic polymer means an acrylic polymer and a methacrylic polymer.
  • the photocurable pressure-sensitive adhesive preferably contains a photopolymerization initiator in addition to the polymerizable polymer and the polyfunctional oligomer or monomer.
  • the manufacturing method of the said back grind tape manufactures by apply
  • the pressure-sensitive adhesive layer can be separately produced by coating on a base material for forming a pressure-sensitive adhesive layer and then transferring it by a method such as laminating on the base material layer of the back grind tape. By laminating the film-like resin composition on the back grind tape thus produced, a back grind tape integrated adhesive sheet can be produced.
  • the back grind tape / dicing tape-integrated adhesive sheet 300 of the present invention comprises a back grind tape / dicing tape 301 and a film-like resin composition 302 as shown in FIG.
  • a release film may be provided between the back grind tape / dicing tape / dicing tape 301 and the film-like resin composition 302.
  • the back grind tape / dicing tape 301 for example, heat resistance and resistance produced by polyolefin such as polyethylene and polypropylene, ethylene vinyl acetate copolymer, polyester, polyimide, polyethylene terephthalate, polyvinyl chloride, polyamide, polyurethane and the like. Any film having excellent chemical properties can be used.
  • the thickness of the back grind tape / dicing tape 1 is not particularly limited, but is usually preferably 30 to 500 ⁇ m.
  • the film-like resin composition 302 is obtained by mixing a crosslinkable resin, a compound having a flux activity, and the like, applying the mixture on a release substrate 321 such as a polyester sheet, and drying at a predetermined temperature. This was half cut to obtain a circular film-shaped resin composition 302. Then, by laminating a back grind tape / dicing tape 301 thereon, a back grind tape function and a dicing tape function constituted by the back grind tape / dicing tape 301, the film-like resin composition 302, and the peeling substrate 321 are provided.
  • a glue sheet 300 can be obtained (FIG. 7).
  • the thickness of the film-like resin composition 302 of the back-grind tape / dicing tape-integrated adhesive sheet 300 formed in this way is not particularly limited, but is preferably 3 ⁇ m or more and 100 ⁇ m or less, particularly 5 ⁇ m or more and 50 ⁇ m or less. More preferably it is. If the thickness is less than the lower limit value, the effect as the back grind tape / dicing tape-integrated adhesive sheet 300 may be reduced. If the thickness exceeds the upper limit value, it may be difficult to manufacture the product and the thickness accuracy may be reduced. is there.
  • the initial melt viscosity is reduced to the minimum melt viscosity.
  • the minimum melt viscosity in the case of having a property of further increasing after reaching is not particularly limited, but is preferably 50,000 Pa ⁇ s or less, more preferably 20,000 Pa ⁇ s or less, and 10,000 Pa ⁇ s or less. More preferably. Further, it is preferably 0.1 Pa ⁇ s or more, more preferably 1 Pa ⁇ s or more, and even more preferably 10 Pa ⁇ s or more.
  • melt viscosity By setting the melt viscosity to the lower limit value or more, it is possible to suppress a decrease in adhesion reliability due to the film-like resin composition 302 protruding from the adherend during heating, and it is possible to suppress contamination of peripheral members due to the protrusion. . Furthermore, defects such as generation of bubbles and unfilling of the upper and lower circuit boards can be prevented. Furthermore, it is possible to prevent a problem that the solder is wet and spreads too much and short-circuits between adjacent electrodes. Further, by setting the value to the upper limit value or less, since the resin between the solder bump and the circuit board electrode is eliminated when the solder bump and the circuit board electrode are metal-bonded, it is possible to suppress the bonding failure.
  • the melt viscosity of the film-like resin composition 302 is obtained by, for example, the following measurement method. Using a viscoelasticity measuring device (manufactured by RheoStressRS-10HAAKE) viscoelasticity measuring device (manufactured by Thermo Fisher Scientific “MARS”), a film-shaped resin composition having a thickness of 100 ⁇ m is parallel plate 20 mm ⁇ , gap 0.05 mm, The value at which the melt viscosity measured at a rate of temperature increase of 10 ° C./min and a frequency of 0.1 Hz was minimized was taken as the measured value.
  • a viscoelasticity measuring device manufactured by RheoStressRS-10HAAKE
  • MMARS Thermo Fisher Scientific
  • the film-like resin composition 302 is not particularly limited, but preferably has transparency to the extent that the surface of the semiconductor element can be recognized. Thereby, the position alignment when joining a chip
  • the peeling substrate 321 of the back grind tape and dicing tape integrated adhesive sheet 300 obtained by the above-described method is peeled off and bonded so that the film-like resin composition 302 and the functional surface 331 of the semiconductor wafer 303 come into contact with each other ( FIG. 8).
  • the upper surface (upper side in FIG. 9) of the back grind tape / dicing tape 301 is fixed to the polishing stage 304 of the polishing apparatus.
  • the polishing apparatus is not particularly limited, and a commercially available apparatus can be used.
  • the thickness of the semiconductor wafer 303 after back grinding is not particularly limited, but is preferably about 10 ⁇ m to 300 ⁇ m, more preferably 10 ⁇ m to 100 ⁇ m.
  • the back grind tape / dicing tape integrated adhesive sheet 300 of the present invention can be directly laminated on the functional surface 331 of the semiconductor wafer 303 because the film-like resin composition 302 is a resin composition containing a compound having flux activity. It is.
  • the semiconductor wafer 303 after the back grinding is placed on the dicer table 305 so that the back grinding tape / dicing tape 301 is in contact with the upper surface (the upper side in FIG. 10) of the dicer table 305 (FIG. 10).
  • a wafer ring 306 is installed around the semiconductor wafer 303 to fix the semiconductor wafer 303.
  • the semiconductor wafer 303 is cut with the blade 307 to divide the semiconductor wafer 303 into individual pieces to obtain a semiconductor element having the film-like resin composition 302.
  • the back grind tape / dicing tape-integrated adhesive sheet 300 has a buffering action, and prevents the semiconductor element from being cracked or chipped when the semiconductor wafer 303 is cut.
  • the semiconductor wafer 303 and the wafer ring 306 may be attached in advance to the back grind tape / dicing tape integrated adhesive sheet 300 and then placed on the dicer table 305.
  • the back grind tape / dicing tape-integrated adhesive sheet 300 is stretched with an expanding device, and the semiconductor elements having the film-shaped resin composition 302 separated into pieces are opened at regular intervals, and then picked up to obtain a substrate.
  • the back grind tape and dicing tape integrated adhesive sheet of the present invention has a back grind tape function and a dicing tape function, and the adhesive layer has a flux activity, so the function of omitting the flux application process and the like can be omitted. Etc. Therefore, the flux cleaning process is unnecessary, the productivity is excellent, and the workability of the semiconductor wafer can be improved.
  • A Polyfunctional epoxy resin having a naphthalene skeleton (a1) Bifunctional naphthalene type epoxy resin (manufactured by DIC Corporation / “EPICLON HP-4770”), epoxy equivalent 204 (A2) Trifunctional naphthalene type epoxy resin (manufactured by DIC Corporation / “EPICLON HP-4750”), epoxy equivalent 188 (A3) Tetrafunctional naphthalene type epoxy resin (DIC Corporation / “EPICLON HP-4700”), epoxy equivalent 165
  • the obtained resin composition varnish was applied to a polyester film substrate (base film, manufactured by Teijin DuPont Films, trade name: Purex A53) to a thickness of 50 ⁇ m, and then dried at 100 ° C. for 5 minutes. Then, the solvent was removed by evaporation to obtain a film-shaped resin composition having a thickness of 25 ⁇ m.
  • base film manufactured by Teijin DuPont Films, trade name: Purex A53
  • a semiconductor wafer having a film-like resin composition obtained above and a soldered copper electrode made of an alloy containing tin and silver as a low melting point conductive metal (size: 200 mm ⁇ , size of individual circuit) 10 mm ⁇ 10 mm, thickness 100 ⁇ m, electrode height 15 ⁇ m, electrode width 30 ⁇ m, distance between electrodes 30 ⁇ m, and 100 mm using a vacuum laminator (MVLP, manufactured by Meiki Co., Ltd.) Lamination was performed at 0 ° C. and 0.8 MPa for 30 seconds to obtain a semiconductor wafer with a film-like resin composition.
  • MVLP vacuum laminator
  • a dicing tape was bonded to the surface of the semiconductor wafer opposite to the surface on which the film-shaped resin composition was bonded with a laminator.
  • the bonding conditions at this time were 25 ° C., a pressure of 0.8 MPa, and 2 mm / s, and the semiconductor wafer with the film-like resin composition and the dicing tape were bonded together.
  • the dicing tape was fixed to the wafer ring and set on a dicing table of a dicing saw (DFD6360, manufactured by DISCO Corporation). Furthermore, it diced (cut
  • a flip chip bonder manufactured by Panasonic, FCB3
  • a silicon circuit board size 200 mm ⁇ , thickness 200 ⁇ m, individual circuit size
  • a protruding electrode made of copper coated with gold and nickel at the tip. 12 mm ⁇ 12 mm, electrode height 15 ⁇ m, electrode width 30 ⁇ m, distance between electrodes 30 ⁇ m
  • a predetermined alignment mark of the semiconductor chip with a film-like resin composition so that the soldered copper electrode comes into contact with Alignment is performed by automatically recognizing a predetermined alignment mark on the silicon circuit board with a flip chip bonder, and the semiconductor chip is heated to 235 ° C. for 5 seconds to melt the solder of the soldered copper electrode. Solder connection was made.
  • the film-shaped resin composition was cured by heating in an atmosphere of fluid pressure (air pressure) of 0.8 MPa at 180 ° C. for 60 minutes.
  • a dicing tape was bonded to the surface of the silicon circuit board opposite to the surface on which the semiconductor chip was mounted with a laminator. At this time, the bonding conditions were 25 ° C., pressure 0.8 MPa, and 2 mm / s.
  • the dicing tape was fixed to the wafer ring and set on a dicing table of a dicing saw (DFD6360, manufactured by DISCO Corporation). Further, dicing (cutting) was performed between the mounted semiconductor chip and the semiconductor chip using a dicing saw under the following conditions. As a result, a silicon circuit board on which a semiconductor chip is mounted is separated into pieces, and the following dicing size electronic device in which the semiconductor chip and the silicon circuit board are bonded via a cured product of a film-like resin composition ( Semiconductor device) was obtained.
  • a dicing saw D6360, manufactured by DISCO Corporation
  • Example 2 In preparing the resin composition, (E) 6 parts by mass of “EPICLON HP-4750” as component (A), 6 parts by mass of “phenolphthaline” as component (B), 2 parts by mass of “YX6954” as component (C), and 24 parts by mass of “jER806” , 11.7 parts by mass of “PR-55617”, 0.1 part by mass of “2P4MZ”, 0.2 part by mass of “KBE403”, and 50 parts by mass of “SC1050-LC” are mixed and mixed. A resin composition varnish having a fraction of 50% by mass was prepared. Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
  • Example 3> In preparing the resin composition, (E) 6 parts by mass of “EPICLON HP-4700” as component (A), 6 parts by mass of “phenolphthaline” as component (B), 2 parts by mass of “YX6954” as component (C), and 24 parts by mass of “jER806” , 11.7 parts by mass of “PR-55617”, 0.1 part by mass of “2P4MZ”, 0.2 part by mass of “KBE403”, and 50 parts by mass of “SC1050-LC” are mixed and mixed. A resin composition varnish having a fraction of 50% by mass was prepared. Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
  • Example 4 In preparing the resin composition, (E) 1 part by weight of “EPICLON HP-4700” as component (A), 6 parts by weight of “phenolphthaline” as component (B), 2 parts by weight of “YX6954” as component (C), and 21.7 of “jER806” Part by weight, 19 parts by weight of “PR-55617”, 0.1 part by weight of “2P4MZ”, 0.2 part by weight of “KBE403”, and 50 parts by weight of “SC1050-LC” are mixed and dissolved. A resin composition varnish having a fraction of 50% by mass was prepared. Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
  • Example 5 In preparing the resin composition, In addition to 1 part by weight of “EPICLON HP-4700” as component (A), 25 parts by weight of “phenolphthaline” as component (B), 2 parts by weight of “YX6954” as component (C), 21.7 “jER806” Part by mass, 0.1 part by mass of “2P4MZ” and 0.2 part by mass of “KBE403” are dissolved in methyl ethyl ketone, and further 50 parts by mass of “SC1050-LC” are mixed to obtain a resin composition having a solid content ratio of 50% by mass. A product varnish was prepared. Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
  • Example 6> In preparing the resin composition, (A) 20 parts by weight of “EPICLON HP-4700” as component, 3 parts by weight of “phenolphthaline” as component (B), 2 parts by weight of “YX6954” as component (C), 13 parts by weight of “jER806” , 11.7 parts by mass of “PR-55617”, 0.1 part by mass of “2P4MZ”, 0.2 part by mass of “KBE403”, and 50 parts by mass of “SC1050-LC” are mixed and mixed. A resin composition varnish having a fraction of 50% by mass was prepared. Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
  • Example 7 In preparing the resin composition, (E) 15 parts by weight of “EPICLON HP-4700” as component (A), 15 parts by weight of “phenolphthaline” as component (B), 2 parts by weight of “YX6954” as component (C), and 6 parts by weight of “jER806” , 11.7 parts by mass of “PR-55617”, 0.1 part by mass of “2P4MZ”, 0.2 part by mass of “KBE403”, and 50 parts by mass of “SC1050-LC” are mixed and mixed. A resin composition varnish having a fraction of 50% by mass was prepared. Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
  • Example 8> In preparing the resin composition, In addition to 0.5 parts by weight of “EPICLON HP-4700” as component (A), 6 parts by weight of “phenolphthaline” as component (B), 2 parts by weight of “YX6954” as component (C), “jER806” 29 .5 parts by mass, 11.7 parts by mass of “PR-55617”, 0.1 part by mass of “2P4MZ”, 0.2 part by mass of “KBE403”, and 50 parts by mass of “SC1050-LC” were dissolved in methyl ethyl ketone. By mixing, a resin composition varnish with a solid content ratio of 50 mass% was prepared. Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
  • Example 9 In preparing the resin composition, (A) 21 parts by weight of “EPICLON HP-4700” as component, 6 parts by weight of “phenolphthaline” as component (B), 2 parts by weight of “YX6954” as component (C), 9 parts by weight of “jER806” , 11.7 parts by mass of “PR-55617”, 0.1 part by mass of “2P4MZ”, 0.2 part by mass of “KBE403”, and 50 parts by mass of “SC1050-LC” are mixed and mixed. A resin composition varnish having a fraction of 50% by mass was prepared. Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
  • Example 10 In preparing the resin composition, (E) 6 parts by weight of “EPICLON HP-4700” as component (A), 2 parts by weight of “phenolphthaline” as component (B), 2 parts by weight of “YX6954” as component (C), and 24 parts by weight of “jER806” , 15.7 parts by mass of “PR-55617”, 0.1 part by mass of “2P4MZ”, 0.2 part by mass of “KBE403” are dissolved in methyl ethyl ketone, and 50 parts by mass of “SC1050-LC” are mixed, A resin composition varnish having a solid content ratio of 50% by mass was prepared. Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
  • Example 11 In preparing the resin composition, (E) 2 parts by weight of “EPICLON HP-4700” as component (A), 26 parts by weight of “phenolphthaline” as component (B), 2 parts by weight of “YX6954” as component (C), 19.7 of “jER806” Part by mass, 0.1 part by mass of “2P4MZ” and 0.2 part by mass of “KBE403” are dissolved in methyl ethyl ketone, and further 50 parts by mass of “SC1050-LC” are mixed to obtain a resin composition having a solid content ratio of 50% by mass. A product varnish was prepared. Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
  • Example 12 In preparing the resin composition, (A) 6 parts by mass of “EPICLON HP-4700” as component, 6 parts by mass of “diphenolic acid” as component (B), 2 parts by mass of “YX6954” as component (C), and 24 parts by mass of “jER806” , 11.7 parts by mass of “PR-55617”, 0.1 part by mass of “2P4MZ” and 0.2 part by mass of “KBE403” are dissolved in methyl ethyl ketone, and 50 parts by mass of “SC1050-LC” are mixed, A resin composition varnish having a solid content ratio of 50% by mass was prepared. Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
  • Example 13> In preparing the resin composition, (E) 6 parts by weight of “EPICLON HP-4700” as component (A), 6 parts by weight of “2-hydroxybenzoic acid” as component (B), 2 parts by weight of “YX6954” as component (C), “jER806” 24 Part by mass, 11.7 parts by mass of “PR-55617”, 0.1 part by mass of “2P4MZ” and 0.2 part by mass of “KBE403” are dissolved in methyl ethyl ketone, and further, 50 parts by mass of “SC1050-LC” are mixed. Then, a resin composition varnish having a solid content ratio of 50% by mass was prepared. Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
  • Example 14 In preparing the resin composition, (E) 6 parts by mass of “EPICLON HP-4700” as component (A), 4 parts by mass of “phenol phthaline” as component (B), 2 parts by mass of “YX6954” as component (C), and 24 parts by mass of “jER806” , 13.7 parts by mass of “PR-55617”, 0.1 part by mass of “2P4MZ”, 0.2 part by mass of “KBE403” are dissolved in methyl ethyl ketone, and further 50 parts by mass of “SC1050-LC” are mixed, A resin composition varnish having a solid content ratio of 50% by mass was prepared. Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
  • Example 15 In preparing the resin composition, (A) 6 parts by mass of “EPICLON HP-4700” as component, 5 parts by mass of “phenolphthaline” as component (B), 2 parts by mass of “YX6954” as component (C), and 24 parts by mass of “jER806” , 12.7 parts by mass of “PR-55617”, 0.1 part by mass of “2P4MZ”, 0.2 part by mass of “KBE403” are dissolved in methyl ethyl ketone, and further, 50 parts by mass of “SC1050-LC” are mixed, A resin composition varnish having a solid content ratio of 50% by mass was prepared. Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
  • Example 16> In preparing the resin composition, (A) 1 part by weight of “EPICLON HP-4700” as component, 17 parts by weight of “phenolphthaline” as component (B), 2 parts by weight of “YX6954” as component (C), and 24 parts by weight of “jER806” , 5.7 parts by weight of “PR-55617”, 0.1 part by weight of “2P4MZ” and 0.2 part by weight of “KBE403” are dissolved in methyl ethyl ketone, and further, 50 parts by weight of “SC1050-LC” are mixed, A resin composition varnish having a solid content ratio of 50% by mass was prepared. Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
  • Example 17 In preparing the resin composition, In addition to 1 part by weight of “EPICLON HP-4700” as component (A), 13.5 parts by weight of “phenolphthaline” as component (B), 2 parts by weight of “YX6954” as component (C), “jER806” 24 Part by mass, 9.2 parts by mass of “PR-55617”, 0.1 part by mass of “2P4MZ” and 0.2 parts by mass of “KBE403” are dissolved in methyl ethyl ketone, and further, 50 parts by mass of “SC1050-LC” are mixed. Then, a resin composition varnish having a solid content ratio of 50% by mass was prepared. Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
  • Example 18 In preparing the resin composition, In addition to 1 part by weight of “EPICLON HP-4700” as component (A), 11.5 parts by weight of “phenolphthaline” as component (B), 2 parts by weight of “YX6954” as component (C), “jER806” 24 Part by mass, 11.2 parts by mass of “PR-55617”, 0.1 part by mass of “2P4MZ” and 0.2 part by mass of “KBE403” are dissolved in methyl ethyl ketone, and further, 50 parts by mass of “SC1050-LC” are mixed. Then, a resin composition varnish having a solid content ratio of 50% by mass was prepared. Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
  • Example 19 In preparing the resin composition, (A) 1 part by weight of “EPICLON HP-4700” as component, 9 parts by weight of “phenolphthaline” as component (B), 2 parts by weight of “YX6954” as component (C), and 24 parts by weight of “jER806” , 13.7 parts by mass of “PR-55617”, 0.1 part by mass of “2P4MZ”, 0.2 part by mass of “KBE403” are dissolved in methyl ethyl ketone, and further 50 parts by mass of “SC1050-LC” are mixed, A resin composition varnish having a solid content ratio of 50% by mass was prepared. Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
  • Example 20> In preparing the resin composition, (A) 3 parts by weight of “EPICLON HP-4700” as component, 12 parts by weight of “phenolphthaline” as component (B), 2 parts by weight of “YX6954” as component (C), and 24 parts by weight of “jER806” , 8.7 parts by mass of “PR-55617”, 0.1 part by mass of “2P4MZ”, 0.2 part by mass of “KBE403” are dissolved in methyl ethyl ketone, and 50 parts by mass of “SC1050-LC” are mixed, A resin composition varnish having a solid content ratio of 50% by mass was prepared. Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
  • Example 21 In preparing the resin composition, (E) 6 parts by mass of “EPICLON HP-4700” as component (A), 12 parts by mass of “phenolphthaline” as component (B), 2 parts by mass of “YX6954” as component (C), and 24 parts by mass of “jER806” , 5.7 parts by weight of “PR-55617”, 0.1 part by weight of “2P4MZ” and 0.2 part by weight of “KBE403” are dissolved in methyl ethyl ketone, and further, 50 parts by weight of “SC1050-LC” are mixed, A resin composition varnish having a solid content ratio of 50% by mass was prepared. Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
  • connection resistance value between the semiconductor chip and the silicon circuit board is measured with a digital multimeter, and the evaluation result based on the connection resistance value is based on the following criteria. Judged. [ ⁇ ]: The connection resistance value of all 10 electronic devices was 10 ⁇ or less. [ ⁇ ]: Connection resistance values of all 10 electronic devices were higher than 10 ⁇ and 30 ⁇ or lower. [ ⁇ ]: One or more electronic devices having a connection resistance value higher than 30 ⁇ .
  • dicing property evaluation was performed by evaluating whether or not the alignment marks of 10 semiconductor chips with a film-like resin composition can be automatically recognized. The evaluation results were determined according to the following criteria. [ ⁇ ]: Of the 10 semiconductor chips with a film-like resin composition, all 10 were automatically recognized. [ ⁇ ]: Among 10 semiconductor chips with a film-like resin composition, 6 or more and 9 or less could be automatically recognized. [X]: Of the 10 semiconductor chips with a film-like resin composition, 5 or less could be automatically recognized.
  • the film-like resin compositions of the Examples and Comparative Examples obtained by the preparation of the resin compositions described above were prepared at 100 ° C., 0 ° C. using a vacuum laminator (MVLP, manufactured by Meiki Co., Ltd.) on the wafer on which the SiN film was formed.
  • the laminate was laminated at 8 MPa for 30 seconds, and a 2 mm square chip with a film-shaped resin composition was produced by dicing. Further, a 6 mm square chip is manufactured by dicing a separate wafer on which the SiN film is formed, and the chip with the 2 mm square film-shaped resin composition is placed on the surface of the chip on which the SiN film is formed.
  • Tables 1 to 3 show the composition of the resin compositions and the evaluation results of the electronic devices in the above Examples and Comparative Examples.
  • each of Examples 1 to 21 is a resin composition containing the component (A), the component (B), and the component (C), and any electronic device using this is a resin composition. Excellent connectivity and insulation reliability.
  • the component (A) is a trifunctional epoxy resin and / or a tetrafunctional epoxy resin, and the component (B) is in one molecule.
  • the comparative example 1 uses adipic acid without using the component (B), adipic acid that does not participate in the reaction with the epoxy resin is present in the resin composition although the flux function can be provided. Therefore, the insulation reliability has been greatly reduced.
  • the component (B) was not used, but the flux function could not be expressed and the connectivity was greatly reduced.
  • the comparative example 3 was a thing which did not use the (A) component, since the heat resistance was insufficient, the insulation reliability fell significantly.
  • Example 22 ⁇ Manufacture of adhesive sheet> Using the resin composition varnish having a solid content ratio of 50% by mass in Example 1, a base polyester film (base film, manufactured by Teijin DuPont Films, trade name “Purex A53”, a dicing tape integrated adhesive sheet later) It corresponds to a cover film.) And was dried at 100 ° C. for 5 minutes to obtain an adhesive sheet on which a film-shaped resin composition having a thickness of 25 ⁇ m was formed.
  • base polyester film base film, manufactured by Teijin DuPont Films, trade name “Purex A53”, a dicing tape integrated adhesive sheet later
  • ⁇ Dicing tape integrated adhesive sheet> Formation of Intervening Layer of Dicing Tape 100 parts by mass of a copolymer having a weight average molecular weight of about 300,000 obtained by copolymerizing 30% by mass of 2-ethylhexyl acrylate and 70% by mass of vinyl acetate, and a molecular weight Is about 700 parts of a pentafunctional acrylate monomer, 5 parts by weight of 2,2-dimethoxy-2-phenylacetophenone, and 3 parts by weight of tolylene diisocyanate (trade name “Coronate T-100” manufactured by Nippon Polyurethane Industry Co., Ltd.) was applied to a surface of a polyester film having a thickness of 38 ⁇ m that had been subjected to a release treatment in advance so that the thickness after drying was 10 ⁇ m, and then dried at 80 ° C. for 5 minutes. And the ultraviolet-ray 500mJ / cm ⁇ 2 > was irradiated with respect to the obtained coating film, and
  • the adhesion layer of the dicing tape was formed into a film on the polyester film. Thereafter, a polyethylene sheet having a thickness of 100 ⁇ m was laminated (laminated) on the side of the pressure-sensitive adhesive layer opposite to the polyester film as a base layer of the dicing tape to obtain a dicing tape.
  • an electronic device was produced by the following procedure.
  • Semiconductor wafer having a soldered copper electrode made of an alloy containing tin and silver as a low melting point conductive metal on the surface size 200 mm ⁇ , individual circuit size 10 mm ⁇ 10 mm, thickness 100 ⁇ m, electrode height 15 ⁇ m, electrode width 30 ⁇ m, and the distance between the electrodes was 30 ⁇ m).
  • the cover film was peeled from the dicing tape-integrated adhesive sheet, and the dicing tape-integrated adhesive sheet and the semiconductor wafer were laminated so that the peeled surface was in contact with the surface having the soldered copper electrode of the semiconductor wafer.
  • This was laminated with a laminator at a bonding temperature of 80 ° C. and a pressure applied to the dicing tape integrated adhesive sheet of 0.8 MPa for 30 seconds to obtain a semiconductor wafer with a dicing tape integrated adhesive sheet.
  • the semiconductor wafer with the dicing tape-integrated adhesive sheet was diced (cut) under the following conditions from the semiconductor wafer side using a dicing saw (DFD 6360, manufactured by Disco Corporation). As a result, the semiconductor wafer was separated into individual pieces, and semiconductor chips having the following dicing size were obtained. In addition, the notch formed by this dicing had the front-end
  • one of the semiconductor chips was pushed up with a needle from the support film side (the substrate layer side of the dicing tape) of the dicing tape-integrated adhesive sheet, and the pushed-up surface of the semiconductor chip was pulled up while adsorbing with the collet of the die bonder . This picked up the semiconductor chip with an adhesive sheet.
  • a silicon circuit (size 200 mm ⁇ , individual circuit size 12 mm ⁇ 12 mm, thickness, having a protruding electrode made of copper coated with gold and nickel at the tip) 200 ⁇ m, electrode height 15 ⁇ m, electrode width 30 ⁇ m, distance between electrodes 30 ⁇ m), a predetermined alignment mark of the semiconductor chip with the adhesive sheet and a predetermined alignment mark of the silicon circuit board are connected with a flip chip bonder. Positioning was performed by automatic recognition, and the semiconductor chip was heated on a silicon circuit board at 235 ° C. for 5 seconds to melt the solder of the solder bumps, thereby performing solder connection.
  • the film-shaped resin composition is cured by heating in an atmosphere of fluid pressure (air pressure) of 0.8 MPa at 180 ° C. for 60 minutes, and the semiconductor chip and the silicon circuit board are cured adhesive films.
  • a bonded electronic device was obtained.
  • a dicing tape was bonded to the surface of the silicon circuit board opposite to the surface on which the semiconductor chip was mounted with a laminator. At this time, the bonding conditions were 25 ° C., pressure 0.8 MPa, and 2 mm / s.
  • the dicing tape was fixed to the wafer ring and set on a dicing table of a dicing saw (DFD6360, manufactured by DISCO Corporation). Further, dicing (cutting) was performed between the mounted semiconductor chip and the semiconductor chip using a dicing saw under the following conditions. As a result, a silicon circuit board on which a semiconductor chip is mounted is separated into pieces, and the following dicing size electronic device in which the semiconductor chip and the silicon circuit board are bonded via a cured product of a film-like resin composition ( Semiconductor device) was obtained.
  • a dicing saw D6360, manufactured by DISCO Corporation
  • Example 23 ⁇ Manufacture of adhesive sheet> Using the resin composition varnish with a solid content ratio of 50% by mass in Example 1, a base polyester film (base film, manufactured by Teijin DuPont Films, trade name “Purex A53”, later back grind tape integrated adhesive sheet The film was applied to a thickness of 50 ⁇ m and dried at 100 ° C. for 5 minutes to obtain an adhesive sheet on which a film-shaped resin composition having a thickness of 25 ⁇ m was formed.
  • base polyester film base film, manufactured by Teijin DuPont Films, trade name “Purex A53”, later back grind tape integrated adhesive sheet
  • the film was applied to a thickness of 50 ⁇ m and dried at 100 ° C. for 5 minutes to obtain an adhesive sheet on which a film-shaped resin composition having a thickness of 25 ⁇ m was formed.
  • ⁇ Back grind tape integrated adhesive sheet> (1) Manufacture of back grind tape integrated adhesive sheet 44 parts by mass of alkyl acrylate copolymer Nissetsu KP-2254E (Nippon Carbide Industries), urethane acrylate HC-15 (Daiichi Seika Kogyo) 45 Mass parts, 8 parts by mass of isocyanate-based cross-linking agent Coronate L (manufactured by Nippon Polyurethane Industry), 3 parts by mass of photopolymerization initiator Irgacure 651 (manufactured by BASF Japan) are dissolved in ethyl acetate, and the varnish for the adhesive layer of the back grind tape was prepared.
  • the pressure-sensitive adhesive layer varnish of the back grind tape was applied to a 38 ⁇ m-thick polyester film surface that had been subjected to release treatment in advance so that the thickness after drying was 10 ⁇ m, and then dried at 80 ° C. for 5 minutes. And the adhesive layer of the back grind tape was formed into a film on the polyester film. Then, a film made of polyethylene and ethylene / vinyl acetate copolymer (EVA) having a thickness of 120 ⁇ m is laminated (laminated) on the side of the pressure-sensitive adhesive layer opposite to the polyester film as a base layer of the back grind tape. Was transferred to a film made of polyethylene and an ethylene / vinyl acetate copolymer (EVA) to obtain a back grind tape.
  • EVA ethylene / vinyl acetate copolymer
  • the adhesive sheet is punched out to the same size as that of the semiconductor wafer, and after removing unnecessary portions, the adhesive layer and the film-like resin of the back grind tape obtained above
  • a back grind tape integrated adhesive sheet in which the substrate of the back grind tape, the adhesive layer of the back grind tape, the film-like resin composition, and the cover film are laminated in this order is obtained. Obtained.
  • an electronic device was produced by the following procedure using the back grind tape integrated adhesive sheet obtained above.
  • Semiconductor wafer having a soldered copper electrode made of an alloy containing tin and silver as a low melting point conductive metal on the surface (size 200 mm ⁇ , individual circuit size 10 mm ⁇ 10 mm, thickness 725 ⁇ m, electrode height 15 ⁇ m, electrode width 30 ⁇ m and a distance between electrodes of 30 ⁇ m) were prepared.
  • the cover film is peeled from the back grind tape integrated adhesive sheet, and the background tape integrated adhesive sheet and the semiconductor wafer are laminated so that the peeled surface is in contact with the surface having the soldered copper electrode of the semiconductor wafer.
  • a semiconductor wafer with a background tape integrated adhesive sheet was obtained.
  • the surface of the semiconductor wafer with the background tape integrated adhesive sheet is ground on the opposite side of the surface of the semiconductor wafer with the back grind tape integrated adhesive sheet.
  • the background tape integrated adhesive was peeled from the interface between the pressure-sensitive adhesive layer of the sheet and the film-like resin composition.
  • the semiconductor wafer was diced to obtain a semiconductor chip with a film-like resin composition. Using the obtained semiconductor chip with a film-like resin composition, an electronic device was produced in the same manner as in Example 22, and the same evaluation was performed.
  • Example 24 Production of Back Grinding Tape / Dicing Tape-Integrated Adhesive Sheet Using the resin composition varnish with a solid content ratio of 50% by mass of Example 1, a polyester film substrate (base film, manufactured by Teijin DuPont Films, Inc., trade name: Pew Rex A53, which corresponds to a cover film of a back grind tape and dicing tape integrated adhesive sheet later.) To a thickness of 50 ⁇ m, and then dried at 100 ° C. for 5 minutes to evaporate and remove the solvent. A film-shaped resin composition having a thickness of 25 ⁇ m was obtained.
  • base film manufactured by Teijin DuPont Films, Inc., trade name: Pew Rex A53, which corresponds to a cover film of a back grind tape and dicing tape integrated adhesive sheet later.
  • a film having a thickness of 100 ⁇ m was formed with an extruder, and the surface was subjected to corona treatment to obtain a base film.
  • a copolymer having a weight average molecular weight of 500,000 obtained by copolymerizing 50 parts by mass of 2-ethylhexyl acrylate, 10 parts by mass of butyl acrylate, 37 parts by mass of vinyl acetate, and 3 parts by mass of 2-hydroxyethyl methacrylate.
  • the polymer was release-treated on a polyester film having a thickness of 38 ⁇ m so that the thickness after drying was 10 ⁇ m, and dried at 80 ° C.
  • an electronic device was manufactured by the following procedure using the back grind tape-integrated adhesive sheet obtained above.
  • Semiconductor wafer having a soldered copper electrode made of an alloy containing tin and silver as a low melting point conductive metal on the surface (size 200 mm ⁇ , individual circuit size 10 mm ⁇ 10 mm, thickness 725 ⁇ m, electrode height 15 ⁇ m, electrode width 30 ⁇ m, and the distance between the electrodes was 30 ⁇ m).
  • the cover film of the back grind tape / dicing tape integrated adhesive sheet is peeled off, and the film-like resin composition is attached to the surface of the semiconductor wafer with the soldered copper electrode at a temperature of 90 ° C. and a pressure of 0.3 MPa.
  • a semiconductor wafer with a grind tape and dicing tape integrated adhesive sheet was obtained.
  • the upper surface (upper side in FIG. 9) of the back grind tape / dicing tape-integrated adhesive sheet 1 is fixed to the polishing stage 304 of the polishing apparatus, and is ground until the thickness of the semiconductor wafer 303 becomes 725 ⁇ m to 200 ⁇ m. Went.
  • this semiconductor wafer is placed so that the back grind tape and dicing tape integrated adhesive sheet 1 and the upper surface of the dicer table 305 are in contact with each other, and a spindle rotating speed of 30 is used using a dicing saw.
  • the wafer was diced (cut) into a 10 mm ⁇ 10 mm square semiconductor chip at 1,000 rpm and a cutting speed of 50 mm / sec.
  • Comparative Example 4 An electronic device was produced and evaluated in the same manner as in Example 22 except that the resin composition of Example 22 was changed to the resin composition of Comparative Example 1. As in Comparative Example 1, the result of inferior insulation reliability was “x”.
  • Comparative Example 5 An electronic device was produced and evaluated in the same manner as in Example 23 except that the resin composition of Example 23 was changed to the resin composition of Comparative Example 1. As in Comparative Example 1, the result of inferior insulation reliability was “x”.
  • Comparative Example 6 An electronic device was produced and evaluated in the same manner as in Example 24 except that the resin composition of Example 24 was changed to the resin composition of Comparative Example 1. As in Comparative Example 1, the result of inferior insulation reliability was “x”.
  • the present invention comprises a resin composition required to provide an electronic device having high connectivity between opposing electrodes and high insulation reliability, and a cured product of the resin composition. It can be applied to electronic devices that require insulation reliability.
  • Electrode 111a Formed on First Substrate Gold 111b Nickel 111c Copper Pillar 120 Second Substrate 121 Electrode 121a Formed on First Substrate Solder Bump 121b Copper Pillar 130 Resin Composition 301 Back Grinding Tape Combined dicing tape adhesive sheet 302 Adhesive layer 321 Release substrate 303 Semiconductor wafer 331 Functional surface 304 Polishing stage 305 Dicer table 306 Wafer ring 307 Blade 300 Film for semiconductor

Abstract

Provided is a resin composition from which an electronic device having a high adhesion between electrodes and a high insulation reliability can be obtained, and an electronic device equipped with a cured product of the resin composition. The aforesaid resin composition, said resin composition being a film-type resin composition for connecting electrodes which is to be disposed between electrodes facing each other to electrically connect the electrodes facing each other, is characterized by comprising: (A) a polyfunctional epoxy resin having a naphthalene skeleton; (B) a compound having a phenolic hydroxyl group and a carboxyl group per molecule; and (C) a film-forming resin.

Description

樹脂組成物、接着シート、ダイシングテープ一体型接着シート、バックグラインドテープ一体型接着シート、バックグラインドテープ兼ダイシングテープ一体型接着シート、及び電子装置Resin composition, adhesive sheet, dicing tape integrated adhesive sheet, back grind tape integrated adhesive sheet, back grind tape / dicing tape integrated adhesive sheet, and electronic device
　本発明は、樹脂組成物、接着シート、ダイシングテープ一体型接着シート、バックグラインドテープ一体型接着シート、バックグラインドテープ兼ダイシングテープ一体型接着シート、及び電子装置に関する。
　本願は、２０１２年１０月１８日に日本に出願された特願２０１２－２３０７３７号に基づき優先権を主張し、その内容をここに援用する。 The present invention relates to a resin composition, an adhesive sheet, a dicing tape integrated adhesive sheet, a back grind tape integrated adhesive sheet, a back grind tape and dicing tape integrated adhesive sheet, and an electronic device.
This application claims priority based on Japanese Patent Application No. 2012-230737 for which it applied to Japan on October 18, 2012, and uses the content here.
　電子装置は、例えば、半導体素子の電極と他の半導体素子の電極、半導体素子の電極と基板の電極、又は基板の電極と他の基板の電極とを、半田を用いて接合する工程を行うことにより製造される。 The electronic device performs, for example, a process of joining the electrode of the semiconductor element and the electrode of another semiconductor element, the electrode of the semiconductor element and the electrode of the substrate, or the electrode of the substrate and the electrode of another substrate using solder. Manufactured by.
　半田を用いて接合を行った後の半導体素子間、半導体素子と基板との間、あるいは基板間には、隙間ができるので、樹脂の硬化物で隙間を充填する必要がある。従来は、半田を用いて接合した後に、この隙間に流動性の熱硬化性樹脂組成物を流し込み、次いで、熱硬化樹脂を硬化させることにより、半導体素子間等の隙間を充填していた。 Since there are gaps between the semiconductor elements after bonding using solder, between the semiconductor elements and the substrate, or between the substrates, it is necessary to fill the gaps with a cured resin. Conventionally, after joining using solder, a fluid thermosetting resin composition is poured into this gap, and then the thermosetting resin is cured to fill gaps between semiconductor elements and the like.
　ところが、近年は、半田を用いて接合する前に、半導体素子間等にフラックス機能を有する化合物を含有する樹脂層を配置し、次いで、半田の融点以上の温度で加熱して、半田接合を行い、次いで、樹脂層の硬化を行う方法が検討されている。 However, in recent years, before bonding using solder, a resin layer containing a compound having a flux function is disposed between semiconductor elements and the like, and then heated at a temperature equal to or higher than the melting point of the solder to perform solder bonding. Subsequently, a method for curing the resin layer has been studied.
　例えば、特開平３－１８４６９５号公報（特許文献１）には、エポキシ樹脂を主成分として含有し、有機酸又は有機酸塩及びはんだ粒子を含有する半田ペーストが開示されている。また、特開２００１－３１１００５号公報（特許文献２）には、エポキシ系樹脂、フェノール系樹脂、ジアリルフタレート系樹脂、およびベンゾシクロブテン系樹脂から選ばれる少なくとも一種の熱硬化性樹脂、及びフラックス成分を含む組成物を、シート状に成形したことを特徴とする熱硬化性樹脂シートが開示されている。 For example, Japanese Patent Laid-Open No. 3-184695 (Patent Document 1) discloses a solder paste containing an epoxy resin as a main component and containing an organic acid or an organic acid salt and solder particles. Japanese Patent Laid-Open No. 2001-311005 (Patent Document 2) discloses at least one thermosetting resin selected from an epoxy resin, a phenol resin, a diallyl phthalate resin, and a benzocyclobutene resin, and a flux component. A thermosetting resin sheet characterized by molding a composition containing the above into a sheet shape is disclosed.
特開平３－１８４６９５号公報Japanese Patent Laid-Open No. 3-184695 特開２００１－３１１００５号公報JP 2001-311005 A
　しかしながら、上記特許文献１～２に示すような従来技術を使用しても電極同士を接合する際に、接合不良が発生したり、絶縁信頼性が低下してしまったりすることがあった。従って、より信頼性の高い電子装置を製造することができる樹脂組成物が望まれていた。 However, even when the conventional techniques as shown in the above-mentioned Patent Documents 1 and 2 are used, when the electrodes are joined together, joint failure may occur or insulation reliability may be lowered. Therefore, a resin composition capable of producing a more reliable electronic device has been desired.
　本発明は、電極間の接合性、絶縁信頼性が高い電子装置を得られる樹脂組成物、接着シート、ダイシングテープ一体型接着シート、バックグラインドテープ一体型接着シート、バックグラインドテープ兼ダイシングテープ一体型接着シート、及び、この樹脂組成物の硬化物を有する電子装置を提供するものである。 The present invention relates to a resin composition, an adhesive sheet, a dicing tape integrated adhesive sheet, a back grind tape integrated adhesive sheet, a back grind tape and dicing tape integrated type, which can obtain an electronic device having high bonding reliability between electrodes and high insulation reliability. An electronic device having an adhesive sheet and a cured product of the resin composition is provided.
　本発明の樹脂組成物は、相対向する電極間に介在され、相対向する電極を電気的に接続するフィルム状の電極接続用樹脂組成物であって、
　上記樹脂組成物は、
（Ａ）ナフタレン骨格を有する多官能エポキシ樹脂と、
（Ｂ）１分子中に、フェノール性水酸基と、カルボキシル基とを有する化合物と、
（Ｃ）フィルム形成性樹脂と、
を含有することを特徴とする。 The resin composition of the present invention is a film-like electrode connecting resin composition that is interposed between electrodes facing each other and electrically connects the electrodes facing each other,
The resin composition is
(A) a polyfunctional epoxy resin having a naphthalene skeleton;
(B) a compound having a phenolic hydroxyl group and a carboxyl group in one molecule;
(C) a film-forming resin;
It is characterized by containing.
　本発明の樹脂組成物は、上記（Ｂ）成分を、１分子中に２つ以上のフェノール性水酸基と、１つ以上のカルボキシル基とを備える化合物とすることができる。 In the resin composition of the present invention, the component (B) can be a compound having two or more phenolic hydroxyl groups and one or more carboxyl groups in one molecule.
　本発明の樹脂組成物は、上記（Ｂ）成分を、１分子中に２つ以上のフェノール性水酸基と、芳香環に直接結合した１つ以上のカルボキシル基とを備える化合物とすることができる。 In the resin composition of the present invention, the component (B) can be a compound having two or more phenolic hydroxyl groups in one molecule and one or more carboxyl groups directly bonded to an aromatic ring.
　本発明の樹脂組成物は、上記樹脂組成物全体に対して、上記（Ａ）成分の含有量が１質量％以上、２０質量％以下とすることができる。 In the resin composition of the present invention, the content of the component (A) can be 1% by mass or more and 20% by mass or less with respect to the entire resin composition.
　本発明の樹脂組成物は、上記樹脂組成物全体に対して、上記（Ｂ）成分の含有量を３質量％以上、２５質量％以下とすることができる。 In the resin composition of the present invention, the content of the component (B) can be 3% by mass or more and 25% by mass or less with respect to the entire resin composition.
　本発明の樹脂組成物は、上記（Ａ）成分と、上記（Ｂ）成分との含有質量比率［（Ｂ）／（Ａ）］が０．２以上、１６以下とすることができる。 In the resin composition of the present invention, the content mass ratio [(B) / (A)] between the component (A) and the component (B) may be 0.2 or more and 16 or less.
　本発明の樹脂組成物は、さらに、（Ｄ）フェノール樹脂、を含有することができる。 The resin composition of the present invention can further contain (D) a phenol resin.
　本発明の接着シートは、上記樹脂組成物と、ベースフィルムとを有することを特徴とする。 The adhesive sheet of the present invention has the above resin composition and a base film.
　本発明のダイシングテープ一体型接着シートは、上記樹脂組成物と、ダイシングテープとを有することを特徴とする。 The dicing tape-integrated adhesive sheet of the present invention is characterized by having the above resin composition and a dicing tape.
　本発明のバックグラインドテープ一体型接着シートは、上記樹脂組成物と、バックグラインドテープとを有することを特徴とする。 The back grind tape integrated adhesive sheet of the present invention is characterized by having the above resin composition and a back grind tape.
　本発明のバックグラインドテープ兼ダイシングテープ一体型接着シートは、上記樹脂組成物と、ダイシングテープとバックグラインドテープとを兼ねたバックグラインドテープ兼ダイシングテープとを有することを特徴とする。 The back grind tape / dicing tape-integrated adhesive sheet of the present invention is characterized by having the above resin composition and a back grind tape / dicing tape serving as both a dicing tape and a back grind tape.
　そして、本発明の電子装置は、上記本発明の樹脂組成物の硬化物を有することを特徴とするものである。 And the electronic device of this invention has the hardened | cured material of the said resin composition of this invention, It is characterized by the above-mentioned.
　本発明においては、樹脂組成物が
（Ａ）ナフタレン骨格を有する多官能エポキシ樹脂と、
（Ｂ）１分子中に、フェノール性水酸基と、カルボキシル基とを有する化合物と、
（Ｃ）フィルム形成性樹脂と、
を含有することにより、相対向する電極間の接続性、絶縁信頼性に優れた電子装置を得ることができる。 In the present invention, the resin composition (A) a polyfunctional epoxy resin having a naphthalene skeleton,
(B) a compound having a phenolic hydroxyl group and a carboxyl group in one molecule;
(C) a film-forming resin;
By containing, it is possible to obtain an electronic device that is excellent in connectivity and insulation reliability between opposing electrodes.
　本発明によれば、相対向する電極間の接続性、絶縁信頼性が高い電子装置を提供できる樹脂組成物接着シート、ダイシングテープ一体型接着シート、バックグラインドテープ一体型接着シート、バックグラインドテープ兼ダイシングテープ一体型接着シート、及びこの樹脂組成物の硬化物を有し、接続性、絶縁信頼性が高い電子装置が提供される。 According to the present invention, a resin composition adhesive sheet, a dicing tape integrated adhesive sheet, a back grind tape integrated adhesive sheet, and a back grind tape that can provide an electronic device having high connectivity between opposing electrodes and high insulation reliability. An electronic device having a dicing tape-integrated adhesive sheet and a cured product of this resin composition and having high connectivity and insulation reliability is provided.
本発明の電子装置について、その製造一工程を示す工程図である。It is process drawing which shows the one manufacturing process about the electronic device of this invention. 本発明の電子装置について、その製造一工程を示す工程図である。It is process drawing which shows the one manufacturing process about the electronic device of this invention. 本発明の電子装置について、その製造一工程を示す工程図である。It is process drawing which shows the one manufacturing process about the electronic device of this invention. 本発明の接着シートの一形態を示した断面図である。It is sectional drawing which showed one form of the adhesive sheet of this invention. 本発明のダイシングテープ一体型接着シートの一形態を示した断面図である。It is sectional drawing which showed one form of the dicing tape integrated adhesive sheet of this invention. 本発明のバックグラインドテープ兼ダイシングテープ一体型接着シートの一形態を示した断面図である。It is sectional drawing which showed one form of the back grinding tape and dicing tape integrated adhesive sheet of this invention. 本発明のバックグラインドテープ兼ダイシングテープ一体型接着シートの一形態を示した断面図である。It is sectional drawing which showed one form of the back grinding tape and dicing tape integrated adhesive sheet of this invention. 本発明の電子装置について、その製造工程を示す断面図である。It is sectional drawing which shows the manufacturing process about the electronic device of this invention. 本発明の電子装置について、その製造工程を示す断面図である。It is sectional drawing which shows the manufacturing process about the electronic device of this invention. 本発明の電子装置について、その製造工程を示す断面図である。It is sectional drawing which shows the manufacturing process about the electronic device of this invention.
　以下、本実施形態について説明する。 Hereinafter, this embodiment will be described.
［電子装置］
　図１～図３は、電極１１１を有する第一基板１１０と、電極１２１を有する第二基板１２０とが、樹脂組成物１３０を介して接合されて電子装置１００となる工程を示している。
　図３に示すように、電子装置１００は、第一基板１１０の一面に形成されている電極１１１と第二基板１２０の一面に形成されている電極１２１とが個々に接合され、第一基板１１０と第二基板１２０との間に樹脂層１３０が充填されている。 [Electronic device]
1 to 3 show a process in which the first substrate 110 having the electrode 111 and the second substrate 120 having the electrode 121 are bonded via the resin composition 130 to form the electronic device 100. FIG.
As shown in FIG. 3, in the electronic device 100, the electrode 111 formed on one surface of the first substrate 110 and the electrode 121 formed on one surface of the second substrate 120 are individually joined to each other, and the first substrate 110. A resin layer 130 is filled between the first substrate 120 and the second substrate 120.
［樹脂組成物］
　まず、樹脂層１３０に用いられる樹脂組成物について説明する。
　本発明における樹脂組成物は、実施の形態の一例として、第一基板１１０の一面に形成されている電極１１１（金１１１ａ／ニッケル１１１ｂ／銅ピラー１１１ｃ）と、第二基板１２０の一面に形成されている電極１２１（半田バンプ１２１ａ／銅ピラー１２１ｂ）との間に導入され、電極１１１の半田バンプ１１１ａと電極１２１の金１２１ａとが接合した後に熱硬化する樹脂組成物である。すなわち、最終的に得られる電子装置１００において、第一基板１１０と第二基板１２０との間のすき間を埋めるように樹脂層１３０が形成されればよい。なお、本実施形態において、第二基板１２０は半導体チップである。 [Resin composition]
First, the resin composition used for the resin layer 130 will be described.
The resin composition in the present invention is formed on one surface of the second substrate 120 and the electrode 111 (gold 111a / nickel 111b / copper pillar 111c) formed on one surface of the first substrate 110 as an example of the embodiment. It is a resin composition that is introduced between the electrodes 121 (solder bumps 121a / copper pillars 121b) and thermally cured after the solder bumps 111a of the electrodes 111 and the gold 121a of the electrodes 121 are joined. In other words, in the electronic device 100 finally obtained, the resin layer 130 may be formed so as to fill the gap between the first substrate 110 and the second substrate 120. In the present embodiment, the second substrate 120 is a semiconductor chip.
　本発明における樹脂組成物は、
　相対向する電極間に介在され、相対向する電極を電気的に接続するフィルム状の電極接続用樹脂組成物であって、
（Ａ）ナフタレン骨格を有する多官能エポキシ樹脂と、
（Ｂ）１分子中に、フェノール性水酸基と、カルボキシル基とを有する化合物と、
（Ｃ）フィルム形成性樹脂と、
を含有することを特徴とするものである。 The resin composition in the present invention is
A film-like electrode connecting resin composition that is interposed between opposing electrodes and electrically connects the opposing electrodes,
(A) a polyfunctional epoxy resin having a naphthalene skeleton;
(B) a compound having a phenolic hydroxyl group and a carboxyl group in one molecule;
(C) a film-forming resin;
It is characterized by containing.
　本発明の樹脂組成物においては、（Ａ）ナフタレン骨格を有する多官能エポキシ樹脂を用いる。これにより、本発明の樹脂組成物の硬化物のＴｇ（ガラス転移点）を向上させることができるとともに、絶縁信頼性を向上させることができる。
　本発明の樹脂組成物において用いられる上記（Ａ）成分とは、分子構造中にナフタレン構造を有し、該ナフタレン環に２つ以上のグリシジルエーテル基が結合した構造を有するもの、あるいは、これらの混合物が挙げられる。 In the resin composition of the present invention, (A) a polyfunctional epoxy resin having a naphthalene skeleton is used. Thereby, Tg (glass transition point) of the cured product of the resin composition of the present invention can be improved, and insulation reliability can be improved.
The component (A) used in the resin composition of the present invention has a naphthalene structure in the molecular structure and has a structure in which two or more glycidyl ether groups are bonded to the naphthalene ring, or these A mixture is mentioned.
　前記ナフタレン骨格を有するエポキシ樹脂としては特に限定されないが、例えば、下記一般式（１）または一般式（２）または一般式（３）または一般式（４）等で表されるものが挙げられる。具体的には、構造式（５）、構造式（６）、構造式（７）、構造式（８）等で表わされるものが挙げられる。更に、これらの中でも構造式（７）、構造式（８）が特に好ましい。
　ナフタレン環は特に耐熱性に優れるため、半導体装置の高温雰囲気下での接続信頼性を向上することができる。 The epoxy resin having a naphthalene skeleton is not particularly limited, and examples thereof include those represented by the following general formula (1), general formula (2), general formula (3), or general formula (4). Specific examples include those represented by structural formula (5), structural formula (6), structural formula (7), structural formula (8), and the like. Furthermore, among these, structural formula (7) and structural formula (8) are particularly preferable.
Since the naphthalene ring is particularly excellent in heat resistance, the connection reliability of the semiconductor device in a high temperature atmosphere can be improved.
Figure JPOXMLDOC01-appb-C000001
Figure JPOXMLDOC01-appb-C000001
Figure JPOXMLDOC01-appb-C000002
Figure JPOXMLDOC01-appb-C000002
Figure JPOXMLDOC01-appb-C000003
Figure JPOXMLDOC01-appb-C000003
Figure JPOXMLDOC01-appb-C000004
Figure JPOXMLDOC01-appb-C000004
Figure JPOXMLDOC01-appb-C000005
Figure JPOXMLDOC01-appb-C000005
Figure JPOXMLDOC01-appb-C000006
Figure JPOXMLDOC01-appb-C000006
Figure JPOXMLDOC01-appb-C000007
Figure JPOXMLDOC01-appb-C000007
Figure JPOXMLDOC01-appb-C000008
Figure JPOXMLDOC01-appb-C000008
　本発明の樹脂組成物において、該樹脂組成物全体に対する上記（Ａ）成分の含有量としては特に限定されないが、１質量％以上、２０質量％以下であることが好ましい。さらに好ましくは１質量％以上、１７質量％以下である。
　樹脂組成物中の（Ａ）成分の含有量を上記下限値以上とすることにより、Ｔｇ（ガラス転移点）の向上に効果を発揮することができる。また、上記上限値以下とすることにより、硬化前の樹脂組成物の可とう性を確保することができる。 In the resin composition of the present invention, the content of the component (A) with respect to the entire resin composition is not particularly limited, but is preferably 1% by mass or more and 20% by mass or less. More preferably, it is 1 mass% or more and 17 mass% or less.
By making content of (A) component in a resin composition more than the said lower limit, an effect can be exhibited in the improvement of Tg (glass transition point). Moreover, the flexibility of the resin composition before hardening can be ensured by setting it as the said upper limit or less.
　なお、本発明の樹脂組成物においては、上記（Ａ）成分のほか、他の熱硬化性樹脂を併せて用いることができる。
　ここで用いられる熱硬化性樹脂としては、特に限定されず、例えば、エポキシ樹脂、オキセタン樹脂、フェノール樹脂、（メタ）アクリレート樹脂、不飽和ポリエステル樹脂、ジアリルフタレート樹脂、マレイミド樹脂等が挙げられる。
　これらの中でも、エポキシ樹脂が好ましい。エポキシ樹脂は、硬化性と保存性、硬化物の耐熱性、耐湿性、耐薬品性等に優れる。 In the resin composition of the present invention, in addition to the component (A), other thermosetting resins can be used together.
The thermosetting resin used here is not particularly limited, and examples thereof include epoxy resins, oxetane resins, phenol resins, (meth) acrylate resins, unsaturated polyester resins, diallyl phthalate resins, and maleimide resins.
Among these, an epoxy resin is preferable. Epoxy resins are excellent in curability and storage stability, heat resistance of cured products, moisture resistance, chemical resistance, and the like.
　本発明の樹脂組成物が含有することができるエポキシ樹脂は、室温で固形のエポキシ樹脂と、室温で液状のエポキシ樹脂のうち、いずれでもよいし、これらの両方でもよい。本発明に係る樹脂組成物が、エポキシ樹脂を含有することにより、樹脂層の溶融挙動の設計の自由度をさらに高めることができる。 The epoxy resin that can be contained in the resin composition of the present invention may be an epoxy resin that is solid at room temperature or an epoxy resin that is liquid at room temperature, or both of them. When the resin composition according to the present invention contains an epoxy resin, the degree of freedom in designing the melting behavior of the resin layer can be further increased.
　本発明の樹脂組成物が含有することができるエポキシ樹脂のうち、室温で固形のエポキシ樹脂としては、特に限定されないが、例えば、ビスフェノールＡ型エポキシ樹脂、ビスフェノールＳ型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、グリシジルアミン型エポキシ樹脂、グリシジルエステル型エポキシ樹脂、３官能エポキシ樹脂、４官能エポキシ樹脂等が挙げられる。これらは１種単独又は２種以上の組み合わせであってもよい。 Among the epoxy resins that can be contained in the resin composition of the present invention, the epoxy resin that is solid at room temperature is not particularly limited, and examples thereof include bisphenol A type epoxy resins, bisphenol S type epoxy resins, and phenol novolac type epoxy resins. Cresol novolac type epoxy resin, glycidylamine type epoxy resin, glycidyl ester type epoxy resin, trifunctional epoxy resin, tetrafunctional epoxy resin and the like. These may be used alone or in combination of two or more.
　本発明の樹脂組成物が含有することができるエポキシ樹脂のうち、室温で液状のエポキシ樹脂としては、特に限定されないが、例えば、ビスフェノールＡ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、アリル化ビスフェノールＡ型エポキシ樹脂、変性エポキシ樹脂、シクロヘキサンジメタノールジグリシジルエーテル等が挙げられる。これらは１種単独又は２種以上の組み合わせでもよい。室温で液状のエポキシ樹脂のエポキシ当量は、好ましくは１２０～４００であり、より好ましくは１４０～３６０であり、更に好ましくは１６０～３２０である。これにより、樹脂層の硬化物における収縮率が大きくなるのを防止して、電子装置に反りが生じるのを確実に防止することができる。 Of the epoxy resins that can be contained in the resin composition of the present invention, the epoxy resin that is liquid at room temperature is not particularly limited, and examples thereof include bisphenol A type epoxy resins, bisphenol F type epoxy resins, and phenol novolac type epoxy resins. Allylated bisphenol A type epoxy resin, modified epoxy resin, cyclohexanedimethanol diglycidyl ether and the like. These may be used alone or in combination of two or more. The epoxy equivalent of the epoxy resin that is liquid at room temperature is preferably 120 to 400, more preferably 140 to 360, and still more preferably 160 to 320. Thereby, it can prevent that the shrinkage | contraction rate in the hardened | cured material of a resin layer becomes large, and can prevent that curvature generate | occur | produces in an electronic device.
　本発明の樹脂組成物においては、（Ｂ）１分子中に、フェノール性水酸基と、カルボキシル基とを有する化合物を用いる。これにより、樹脂組成物にフラックス機能を付与することができ、電極間の接続性、絶縁信頼性を向上させることができるとともに、上記（Ａ）成分と反応することができるので、硬化物の分子骨格中に取り込むことができるため、安定した絶縁性を有することができる。 In the resin composition of the present invention, (B) a compound having a phenolic hydroxyl group and a carboxyl group in one molecule is used. Thereby, the flux function can be imparted to the resin composition, the connectivity between the electrodes and the insulation reliability can be improved, and the resin can react with the component (A). Since it can be taken into the skeleton, it can have stable insulating properties.
　本発明の樹脂組成物においては、上記（Ｂ）成分として、１分子中に１つのフェノール性水酸基と１つのカルボキシル基を有するものを用いることができる。
　このような（Ｂ）成分としては、２－ヒドロキシ安息香酸、３－ヒドロキシ安息香酸、４－ヒドロキシ安息香酸、１－ヒドロキシ－２－ナフトエ酸、２－ヒドロキシ－１－ナフトエ酸、３－ヒドロキシ－２－ナフトエ酸、６－ヒドロキシ－１－ナフトエ酸、６－ヒドロキシ－２－ナフトエ酸などのヒドロキシナフトエ酸類、２－ヒドロキシケイ皮酸、３－ヒドロキシケイ皮酸、４－ヒドロキシケイ皮酸などのヒドロキシケイ皮酸類などを例示することができる。
　このような（Ｂ）成分は、樹脂組成物にフラックス作用を付与することができるとともに、（Ａ）成分あるいは（Ａ）成分以外のエポキシ樹脂を併用した場合においても、これらのエポキシ樹脂と付加反応することができる。 In the resin composition of this invention, what has one phenolic hydroxyl group and one carboxyl group in 1 molecule can be used as said (B) component.
Examples of such component (B) include 2-hydroxybenzoic acid, 3-hydroxybenzoic acid, 4-hydroxybenzoic acid, 1-hydroxy-2-naphthoic acid, 2-hydroxy-1-naphthoic acid, 3-hydroxy- Hydroxynaphthoic acids such as 2-naphthoic acid, 6-hydroxy-1-naphthoic acid, 6-hydroxy-2-naphthoic acid, 2-hydroxycinnamic acid, 3-hydroxycinnamic acid, 4-hydroxycinnamic acid, etc. Examples thereof include hydroxycinnamic acids.
Such a component (B) can impart a flux action to the resin composition, and even when an epoxy resin other than the component (A) or the component (A) is used in combination, an addition reaction with these epoxy resins. can do.
　また、本発明の樹脂組成物においては、上記（Ｂ）成分として、１分子中に２つ以上のフェノール性水酸基と１つ以上のカルボキシル基を有するものを用いることができる。このような（Ｂ）成分としては、ジフェノール酸、２，３－ジヒドロキシ安息香酸、２，４－ジヒドロキシ安息香酸、ゲンチジン酸（２，５－ジヒドロキシ安息香酸）、２，６－ジヒドロキシ安息香酸、３，４－ジヒドロキシ安息香酸、没食子酸（３，４，５－トリヒドロキシ安息香酸）等の安息香酸誘導体；１，４－ジヒドロキシ－２－ナフトエ酸、３，５－ジヒドロキシ－２－ナフトエ酸、３，７－ジヒドロキシ－２－ナフトエ酸等のナフトエ酸誘導体；フェノールフタリン；およびパモ酸などが挙げられ、これらは１種単独又は２種以上の組み合わせでもよい。
　このような（Ｂ）成分は、樹脂組成物にフラックス作用を付与することができるとともに、（Ａ）成分あるいは（Ａ）成分以外のエポキシ樹脂を併用した場合においても、これらのエポキシ樹脂との付加反応により、その硬化剤として作用することができる。 Moreover, in the resin composition of this invention, what has two or more phenolic hydroxyl groups and one or more carboxyl groups in 1 molecule can be used as said (B) component. Examples of such component (B) include diphenolic acid, 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), 2,6-dihydroxybenzoic acid, Benzoic acid derivatives such as 3,4-dihydroxybenzoic acid and gallic acid (3,4,5-trihydroxybenzoic acid); 1,4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2-naphthoic acid, Examples include naphthoic acid derivatives such as 3,7-dihydroxy-2-naphthoic acid; phenolphthaline; and pamoic acid. These may be used alone or in combination of two or more.
Such a component (B) can impart a flux action to the resin composition, and even when an epoxy resin other than the component (A) or the component (A) is used in combination with these epoxy resins. The reaction can act as the curing agent.
　また、本発明の樹脂組成物においては、上記（Ｂ）成分として、１分子中に２つ以上のフェノール性水酸基と、芳香環に直接結合した１つ以上のカルボキシル基とを備える化合物を用いることができる。
　このような（Ｂ）成分としては、例えば、２，３－ジヒドロキシ安息香酸、２，４－ジヒドロキシ安息香酸、ゲンチジン酸（２，５－ジヒドロキシ安息香酸）、２，６－ジヒドロキシ安息香酸、３，４－ジヒドロキシ安息香酸、没食子酸（３，４，５－トリヒドロキシ安息香酸）等の安息香酸誘導体、１，４－ジヒドロキシ－２－ナフトエ酸、３，５－ジヒドロキシ－２－ナフトエ酸、３，７－ジヒドロキシ－２－ナフトエ酸等のナフトエ酸誘導体、及び、フェノールフタリン、パモ酸等が挙げられ、これらは１種単独又は２種以上の組み合わせでもよい。
　このような（Ｂ）成分は、樹脂組成物にフラックス作用を付与することができるとともに、（Ａ）成分あるいは（Ａ）成分以外のエポキシ樹脂を併用した場合においても、これらのエポキシ樹脂との付加反応により、その硬化剤として作用することができる。 Further, in the resin composition of the present invention, as the component (B), a compound having two or more phenolic hydroxyl groups and one or more carboxyl groups directly bonded to an aromatic ring in one molecule is used. Can do.
Examples of such component (B) include 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), 2,6-dihydroxybenzoic acid, 3, Benzoic acid derivatives such as 4-dihydroxybenzoic acid and gallic acid (3,4,5-trihydroxybenzoic acid), 1,4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2-naphthoic acid, 3, Examples thereof include naphthoic acid derivatives such as 7-dihydroxy-2-naphthoic acid, phenolphthaline, pamoic acid and the like, and these may be used alone or in combination of two or more.
Such a component (B) can impart a flux action to the resin composition, and even when an epoxy resin other than the component (A) or the component (A) is used in combination with these epoxy resins. The reaction can act as the curing agent.
　本発明の樹脂組成物は、上記（Ａ）成分と（Ｂ）成分とを併用することにより、高い絶縁性とフラックス作用に起因した半田接続性を有する樹脂組成物を得ることができる。 The resin composition of the present invention can obtain a resin composition having high insulating properties and solder connectivity resulting from a flux action by using the component (A) and the component (B) in combination.
　本発明の樹脂組成物において、該樹脂組成物全体に対する上記（Ｂ）成分の含有量としては特に限定されないが、３質量％以上、２５質量％以下であることが好ましい。さらに好ましくは３．５質量％以上、２０質量％以下である。
　樹脂組成物中の（Ｂ）成分の含有量を上記下限値以上とすることにより、硬化後の樹脂組成物の絶縁性を確保することができる。また、上記上限値以下とすることにより、効果的なフラックス作用の発現による半田接続性を確保することができる。 In the resin composition of the present invention, the content of the component (B) with respect to the entire resin composition is not particularly limited, but is preferably 3% by mass or more and 25% by mass or less. More preferably, it is 3.5 mass% or more and 20 mass% or less.
By making content of (B) component in a resin composition more than the said lower limit, the insulation of the resin composition after hardening can be ensured. Moreover, by setting it as the said upper limit or less, the solder connectivity by expression of an effective flux effect | action can be ensured.
　また、本発明の樹脂組成物においては、樹脂組成物中における上記（Ａ）成分と上記（Ｂ）成分との含有質量比率［（Ｂ）／（Ａ）］が０．２以上、１６以下であることが好ましい。さらに好ましくは０．５以上、１３以下、特に好ましくは０．７以上、１０以下である。
　上記質量比率を上記下限値以上とすることにより、樹脂組成物の効果的なフラックス作用と成膜性や可とう性を確保することができる。また、上記上限値以下とすることにより、硬化後の樹脂組成物の絶縁性と成膜性や可とう性を確保することができる。 In the resin composition of the present invention, the mass ratio [(B) / (A)] of the component (A) and the component (B) in the resin composition is 0.2 or more and 16 or less. Preferably there is. More preferably, it is 0.5 or more and 13 or less, and particularly preferably 0.7 or more and 10 or less.
By making the said mass ratio more than the said lower limit, the effective flux effect | action of a resin composition, film formability, and a flexibility can be ensured. Moreover, by setting it as the said upper limit or less, the insulation of the resin composition after hardening, film-forming property, and a flexibility can be ensured.
　本発明の樹脂組成物においては、（Ｃ）フィルム形成性樹脂を用いる。これにより、樹脂組成物を容易にフィルム状とすることができ、効率的に接続性および絶縁信頼性に優れた電子装置を作製することができる。 (C) A film-forming resin is used in the resin composition of the present invention. Thereby, a resin composition can be easily made into a film form and the electronic device excellent in connectivity and insulation reliability can be produced efficiently.
　フィルム形成性樹脂としては、例えば、（メタ）アクリル系樹脂、フェノキシ樹脂、ポリエステル樹脂、ポリウレタン樹脂、ポリイミド樹脂、シロキサン変性ポリイミド樹脂、ポリブタジエン、ポリプロピレン、スチレン－ブタジエン－スチレン共重合体、スチレン－エチレン－ブチレン－スチレン共重合体、ポリアセタール樹脂、ポリビニルブチラール樹脂、ポリビニルアセタール樹脂、ブチルゴム、クロロプレンゴム、ポリアミド樹脂、アクリロニトリル－ブタジエン共重合体、アクリロニトリル－ブタジエン－アクリル酸共重合体、アクリロニトリル－ブタジエン－スチレン共重合体、ポリ酢酸ビニル、ナイロン等が挙げられる。
　これらの中でも、（メタ）アクリル系樹脂、フェノキシ樹脂が好ましい。（メタ）アクリル系樹脂またはフェノキシ樹脂を適用することにより、フィルム形成性と支持体および被着体に対する密着性を両立することができる。フィルム形成性樹脂は、１種単独又は２種以上を組み合わせて用いてもよい。 Examples of the film-forming resin include (meth) acrylic resin, phenoxy resin, polyester resin, polyurethane resin, polyimide resin, siloxane-modified polyimide resin, polybutadiene, polypropylene, styrene-butadiene-styrene copolymer, styrene-ethylene- Butylene-styrene copolymer, polyacetal resin, polyvinyl butyral resin, polyvinyl acetal resin, butyl rubber, chloroprene rubber, polyamide resin, acrylonitrile-butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer Examples include coalescence, polyvinyl acetate, and nylon.
Among these, (meth) acrylic resins and phenoxy resins are preferable. By applying a (meth) acrylic resin or a phenoxy resin, it is possible to achieve both film formability and adhesion to a support and an adherend. The film-forming resin may be used alone or in combination of two or more.
　なお、フィルム形成性樹脂において、（メタ）アクリル系樹脂とは、（メタ）アクリル酸及びその誘導体の重合体、あるいは（メタ）アクリル酸及びその誘導体と他の単量体との共重合体を意味する。ここで、（メタ）アクリル酸などと表記するときは、アクリル酸又はメタクリル酸を意味する。 In the film-forming resin, the (meth) acrylic resin is a polymer of (meth) acrylic acid and derivatives thereof, or a copolymer of (meth) acrylic acid and derivatives thereof with other monomers. means. Here, when it describes with (meth) acrylic acid etc., it means acrylic acid or methacrylic acid.
　フィルム形成性樹脂として用いられるアクリル系樹脂としては、具体的には、ポリアクリル酸、ポリメタクリル酸、ポリアクリル酸メチル、ポリアクリル酸エチル、ポリアクリル酸ブチル、ポリアクリル酸－２－エチルヘキシル等のポリアクリル酸エステル；ポリメタクリル酸メチル、ポリメタクリル酸エチル、ポリメタクリル酸ブチル等のポリメタクリル酸エステル；ポリアクリロニトリル、ポリメタクリロニトリル、ポリアクリルアミド、アクリル酸ブチル－アクリル酸エチル－アクリロニトリル共重合体、アクリロニトリル－ブタジエン共重合体、アクリロニトリル－ブタジエン－アクリル酸共重合体、アクリロニトリル－ブタジエン－スチレン共重合体、アクリロニトリル－スチレン共重合体、メタクリル酸メチル－スチレン共重合体、メタクリル酸メチル－アクリロニトリル共重合体、メタクリル酸メチル－α－メチルスチレン共重合体、アクリル酸ブチル－アクリル酸エチル－アクリロニトリル－２－ヒドロキシエチルメタクリレート－メタクリル酸共重合体、アクリル酸ブチル－アクリル酸エチル－アクリロニトリル－２－ヒドロキシエチルメタクリレート－アクリル酸共重合体、アクリル酸ブチル－アクリロニトリル－２－ヒドロキシエチルメタクリレート共重合体、アクリル酸ブチル－アクリロニトリル－アクリル酸共重合体、アクリル酸ブチル－アクリル酸エチル－アクリロニトリル共重合体、アクリル酸エチル－アクリロニトリル－Ｎ，Ｎジメチルアクリルアミド共重合体等が挙げられる。
　これらの中でも、アクリル酸ブチル－アクリル酸エチル－アクリロニトリル共重合体、アクリル酸エチル－アクリロニトリル－Ｎ，Ｎジメチルアクリルアミド共重合体が好ましい。 Specific examples of the acrylic resin used as the film-forming resin include polyacrylic acid, polymethacrylic acid, polymethyl acrylate, polyethyl acrylate, polybutyl acrylate, and poly-2-ethylhexyl acrylate. Polyacrylic acid ester; polymethacrylic acid ester such as polymethyl methacrylate, polyethyl methacrylate, polybutyl methacrylate; polyacrylonitrile, polymethacrylonitrile, polyacrylamide, butyl acrylate-ethyl acrylate-acrylonitrile copolymer, Acrylonitrile-butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene-styrene copolymer, acrylonitrile-styrene copolymer, methyl methacrylate-styrene copolymer , Methyl methacrylate-acrylonitrile copolymer, methyl methacrylate-α-methylstyrene copolymer, butyl acrylate-ethyl acrylate-acrylonitrile-2-hydroxyethyl methacrylate-methacrylic acid copolymer, butyl acrylate-acrylic acid Ethyl-acrylonitrile-2-hydroxyethyl methacrylate-acrylic acid copolymer, butyl acrylate-acrylonitrile-2-hydroxyethyl methacrylate copolymer, butyl acrylate-acrylonitrile-acrylic acid copolymer, butyl acrylate-ethyl acrylate -Acrylonitrile copolymer, ethyl acrylate-acrylonitrile-N, N dimethylacrylamide copolymer, and the like.
Among these, butyl acrylate-ethyl acrylate-acrylonitrile copolymer and ethyl acrylate-acrylonitrile-N, N dimethylacrylamide copolymer are preferable.
　なお、フィルム形成性樹脂として用いられるアクリル系樹脂として、ニトリル基、エポキシ基、水酸基、カルボキシル基等の官能基を有する単量体を共重合させてなる（メタ）アクリル系樹脂を用いることにより、フィルム状の樹脂組成物の支持体および被着体への密着性、および熱硬化性樹脂等との相溶性を向上させることができる。 In addition, as an acrylic resin used as a film-forming resin, by using a (meth) acrylic resin obtained by copolymerizing a monomer having a functional group such as a nitrile group, an epoxy group, a hydroxyl group, or a carboxyl group, The adhesion of the film-like resin composition to the support and adherend, and compatibility with the thermosetting resin and the like can be improved.
　上記アクリル系樹脂の重量平均分子量は、例えば１０００以上１００万以下であり、３０００以上９０万以下が好ましい。
　上記アクリル系樹脂の重量平均分子量が上記範囲にあることにより、樹脂組成物の成膜性をさらに向上させることができるとともに硬化時の流動性を確保することができる。 The weight average molecular weight of the acrylic resin is, for example, 1,000 or more and 1,000,000 or less, and preferably 3000 or more and 900,000 or less.
When the weight average molecular weight of the acrylic resin is within the above range, the film-forming property of the resin composition can be further improved and the fluidity at the time of curing can be ensured.
　また、フィルム形成性樹脂として、フェノキシ樹脂を用いる場合、その数平均分子量は５０００～２００００のフェノキシ樹脂が好ましい。
　かかる数平均分子量のフェノキシ樹脂を用いることにより、フィルム状の樹脂組成物の流動性を抑制し、フィルム状の樹脂組成物の厚みを均一なものとすることができる。 When a phenoxy resin is used as the film-forming resin, a phenoxy resin having a number average molecular weight of 5000 to 20000 is preferable.
By using such a phenoxy resin having a number average molecular weight, the fluidity of the film-like resin composition can be suppressed, and the thickness of the film-like resin composition can be made uniform.
　フェノキシ樹脂の骨格は、特に限定されるものではないが、例えば、ビスフェノールＡタイプ、ビスフェノールＦタイプ、ビフェニル骨格タイプ、ビフェノール骨格タイプ等が挙げられる。 The skeleton of the phenoxy resin is not particularly limited, and examples thereof include bisphenol A type, bisphenol F type, biphenyl skeleton type, and biphenol skeleton type.
　本発明の樹脂組成物において、該樹脂組成物全体に対する上記（Ｃ）成分の含有量としては特に限定されないが、０．１質量％以上、２０質量％以下であることが好ましく、さらに好ましくは０．２質量％以上、１０質量％以下である。
　樹脂組成物中の（Ｃ）成分の含有量を上記範囲内とすることにより、フィルム状の樹脂組成物の成膜性低下を抑制しつつ、硬化後のフィルム状の樹脂組成物における弾性率の増加を抑制することができる。その結果、フィルム状の樹脂組成物と支持体および被着体の密着性をさらに向上させることができる。更に、フィルム状の樹脂組成物の溶融粘度の増加を抑制することができる。 In the resin composition of the present invention, the content of the component (C) with respect to the entire resin composition is not particularly limited, but is preferably 0.1% by mass or more and 20% by mass or less, more preferably 0. It is 2 mass% or more and 10 mass% or less.
By controlling the content of the component (C) in the resin composition within the above range, the elasticity of the film-shaped resin composition after curing is suppressed while suppressing a decrease in film formability of the film-shaped resin composition. Increase can be suppressed. As a result, the adhesion between the film-shaped resin composition, the support and the adherend can be further improved. Furthermore, an increase in the melt viscosity of the film-like resin composition can be suppressed.
　本発明の樹脂組成物は、特に限定されるものではないが、上記（Ａ）～（Ｃ）成分のほか、熱硬化樹脂としてエポキシ樹脂を（Ａ）成分とともに併用する場合は、硬化剤を含有することが好ましい。このような硬化剤は、エポキシ樹脂の硬化剤として作用するものであればよく、適宜選択されている。 The resin composition of the present invention is not particularly limited, but in addition to the above components (A) to (C), when an epoxy resin is used together with the component (A) as a thermosetting resin, it contains a curing agent. It is preferable to do. Such a hardening | curing agent should just act as a hardening | curing agent of an epoxy resin, and is selected suitably.
　具体的には、ジエチレントリアミン、トリエチレンテトラミン、メタキシレリレンジアミン、などの脂肪族ポリアミン、ジアミノジフェニルメタン、ｍ－フェニレンジアミン、ジアミノジフェニルスルフォン、などの芳香族ポリアミン、ジシアンジアミド、有機酸ジヒドラジドなどを含むポリアミン化合物等のアミン系硬化剤、ヘキサヒドロ無水フタル酸、メチルテトラヒドロ無水フタル酸、などの脂肪族酸無水物、無水トリトメット酸、無水ピロメリット酸、ベンゾフェノンテトラカルボン酸、などの芳香族酸無水物等の酸無水物系硬化剤、フェノールノボラック樹脂、クレゾールノボラック樹脂、フェノールアラルキル（フェニレン、ビフェニレン骨格を含む）樹脂、ナフトールアラルキル（フェニレン、ビフェニレン骨格を含む）樹脂、トリフェノールメタン樹脂、ジシクロペンタジエン型フェノール樹脂、ビス（モノまたはジｔ－ブチルフェノール）プロパン、メチレンビス（２－プロペニル）フェノール、プロピレンビス（２－プロペニル）フェノール、ビス［（２－プロペニルオキシ）フェニル］メタン、ビス［（２－プロペニルオキシ）フェニル］プロパン、４，４’－（１－メチルエチリデン）ビス［２－（２－プロペニル）フェノール］、４，４’－（１－メチルエチリデン）ビス［２－（１－フェニルエチル）フェノール］、４，４’－（１－メチルエチリデン）ビス［２－メチル－６－ヒドロキシメチルフェノール］、４，４’－（１－メチルエチリデン）ビス［２－メチル－６－（２－プロペニル）フェノール］、４，４’－（１－メチルテトラデシリデン）ビスフェノールなどのフェノール系硬化剤等が挙げられる。
　これらの中でも、フェノール樹脂（上記フェノール系硬化剤）を用いると、樹脂組成物の硬化物のガラス転移温度を効果的に高めることができ、また、アウトガスとなる成分を低減することができる。 Specifically, polyamines including aliphatic polyamines such as diethylenetriamine, triethylenetetramine, and metaxylylenediamine, aromatic polyamines such as diaminodiphenylmethane, m-phenylenediamine, and diaminodiphenylsulfone, dicyandiamide, and organic acid dihydrazide Amine-based curing agents such as compounds, aliphatic acid anhydrides such as hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, aromatic acid anhydrides such as tritometic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic acid, etc. Acid anhydride curing agent, phenol novolac resin, cresol novolac resin, phenol aralkyl (including phenylene and biphenylene skeleton) resin, naphthol aralkyl (including phenylene and biphenylene skeleton) resin Triphenol methane resin, dicyclopentadiene type phenol resin, bis (mono or di t-butylphenol) propane, methylene bis (2-propenyl) phenol, propylene bis (2-propenyl) phenol, bis [(2-propenyloxy) phenyl] Methane, bis [(2-propenyloxy) phenyl] propane, 4,4 ′-(1-methylethylidene) bis [2- (2-propenyl) phenol], 4,4 ′-(1-methylethylidene) bis [ 2- (1-phenylethyl) phenol], 4,4 ′-(1-methylethylidene) bis [2-methyl-6-hydroxymethylphenol], 4,4 ′-(1-methylethylidene) bis [2- Methyl-6- (2-propenyl) phenol], 4,4 '-(1-methyltetradecylidene) bis Examples thereof include phenolic curing agents such as phenol.
Among these, when a phenol resin (the above-described phenol-based curing agent) is used, the glass transition temperature of the cured product of the resin composition can be effectively increased, and components that become outgas can be reduced.
　上記硬化剤を用いる場合、硬化剤の使用量は、エポキシ樹脂のエポキシ当量と硬化剤の当量との比から計算して求められる。硬化剤がフェノール樹脂の場合、エポキシ樹脂のエポキシ基（Ｅｐ）と硬化剤のフェノール性水酸基（ＯＨ）との当量比（Ｅｐ／ＯＨ）は、０．５～１．５が好ましく、０．７～１．３が特に好ましい。上記範囲とすることで、フィルム状の樹脂組成物の耐熱性と保存性とを両立することができる。
　なお、上記フェノール性水酸基（ＯＨ）の量を算出する際には、硬化剤のフェノール性水酸基と、（Ｂ）成分が有するフェノール性水酸基とカルボキシル基を加えて算出することが好ましい。 When using the said hardening | curing agent, the usage-amount of a hardening | curing agent calculates | requires from the ratio of the epoxy equivalent of an epoxy resin, and the equivalent of a hardening | curing agent. When the curing agent is a phenol resin, the equivalent ratio (Ep / OH) of the epoxy group (Ep) of the epoxy resin to the phenolic hydroxyl group (OH) of the curing agent is preferably 0.5 to 1.5, 0.7 Is particularly preferred. By setting it as the said range, heat resistance and preservability of a film-form resin composition can be made compatible.
In addition, when calculating the quantity of the said phenolic hydroxyl group (OH), it is preferable to calculate by adding the phenolic hydroxyl group of a hardening | curing agent and the phenolic hydroxyl group and carboxyl group which (B) component has.
　また、本発明の樹脂組成物は、特に限定されるものではないが、上記（Ａ）～（Ｃ）成分のほか、熱硬化樹脂としてエポキシ樹脂を（Ａ）成分とともに併用する場合は、硬化促進剤を含有することができる。このような硬化促進剤は、エポキシ樹脂と硬化剤との硬化反応を促進させるものであればよく、適宜選択される。具体的には、イミダゾール類、１，８－ジアザビシクロ（５，４，０）ウンデセン等のアミン系触媒、トリフェニルホスフィンやテトラ置換ホスホニウムと多官能フェノール化合物との塩等のリン化合物が挙げられる。これらの中でも、フィルム状の樹脂層の速硬化性、保存性、半導体素子上のアルミパッド腐食性を両立するイミダゾール類、リン化合物が好ましい。 The resin composition of the present invention is not particularly limited, but in addition to the above components (A) to (C), when an epoxy resin is used together with the component (A) as a thermosetting resin, curing acceleration An agent can be contained. Such a curing accelerator may be selected as long as it accelerates the curing reaction between the epoxy resin and the curing agent. Specific examples include amine compounds such as imidazoles and 1,8-diazabicyclo (5,4,0) undecene, and phosphorus compounds such as salts of triphenylphosphine and tetra-substituted phosphonium with polyfunctional phenol compounds. Among these, imidazoles and phosphorus compounds that achieve both fast curability of the film-like resin layer, storage stability, and corrosivity of the aluminum pad on the semiconductor element are preferable.
　上記効果促進剤を用いる場合、硬化促進剤の含有量は、樹脂組成物全体に対して０．００１～１０質量％が好ましく、０．００３～７質量％がさらに好ましく、０．０１～５質量％がより好ましい。
　上記範囲とすることで、フィルム状の樹脂組成物の硬化性および保存性、硬化後の物性のバランスを保つことが可能となる。 When the above effect accelerator is used, the content of the curing accelerator is preferably 0.001 to 10% by mass, more preferably 0.003 to 7% by mass, and 0.01 to 5% by mass with respect to the entire resin composition. % Is more preferable.
By setting it as the said range, it becomes possible to maintain the balance of sclerosis | hardenability and preservability of a film-form resin composition, and the physical property after hardening.
　また、本発明の樹脂組成物は、特に限定されるものではないが、上記（Ａ）～（Ｃ）成分のほか、無機充填材を含有することができる。これにより、フィルム状樹脂組成物の硬化物における線膨張係数を小さくすることができ、これを用いた電子装置の接続性、絶縁信頼性を向上させることができる。また、フィルム状の樹脂組成物のタック力をより容易に調節することが可能となり、例えば、フィルム状の樹脂組成物とともに支持体を用いる場合は、支持体との剥離性をより好適なものとすることができるとともに、電極を有した基板や半導体チップ等に対する接着性を特に優れたものとすることができる。 The resin composition of the present invention is not particularly limited, but may contain an inorganic filler in addition to the components (A) to (C). Thereby, the linear expansion coefficient in the hardened | cured material of a film-form resin composition can be made small, and the connectivity and insulation reliability of an electronic device using this can be improved. Further, the tack force of the film-like resin composition can be more easily adjusted. For example, when a support is used together with the film-like resin composition, the peelability from the support is more suitable. In addition, the adhesion to a substrate having an electrode, a semiconductor chip or the like can be made particularly excellent.
　無機充填材としては、例えば、銀、酸化チタン、シリカ、マイカ等を挙げることができるが、これらの中でもシリカが好ましい。また、シリカの形状としては、破砕シリカと球状シリカがあるが、球状シリカが好ましい。また、熱伝導性等の観点からは、酸化アルミニウム、窒化アルミニウム、酸化チタン、窒化珪素、窒化ホウ素等を用いることもできる。 Examples of the inorganic filler include silver, titanium oxide, silica, mica and the like. Among these, silica is preferable. Moreover, although there exist crushing silica and spherical silica as a shape of a silica, spherical silica is preferable. From the viewpoint of thermal conductivity, aluminum oxide, aluminum nitride, titanium oxide, silicon nitride, boron nitride, or the like can also be used.
　また、無機充填材の平均粒径は、特に限定されないが、０．０１μｍ以上、２０μｍ以下であるのが好ましく、０．０３μｍ以上、５μｍ以下であるのがより好ましい。
　上記範囲とすることで、フィルム状の樹脂組成物内での無機充填材の凝集を抑制し、無機充填材の凝集物のない均質な樹脂組成物を得ることができる。 The average particle size of the inorganic filler is not particularly limited, but is preferably 0.01 μm or more and 20 μm or less, and more preferably 0.03 μm or more and 5 μm or less.
By setting it as the said range, aggregation of the inorganic filler in a film-form resin composition can be suppressed, and the homogeneous resin composition without the aggregate of an inorganic filler can be obtained.
　上記無機充填材の含有量は、特に限定されないが、樹脂組成物全体に対して１～８０質量％であるのが好ましく、２０～７５質量％であるのが更に好ましく、３０～７０質量％であるのがより好ましい。
　上記範囲とすることで、硬化後の樹脂組成物と電極を有する基板や半導体チップとの線膨張係数差が小さくなり、温度サイクル試験の際に発生する応力を低減させることができるとともに、硬化後の樹脂組成物の弾性率が高くなりすぎるのを抑制することができるため、電子装置における接続性、絶縁信頼性を向上させることができる。 The content of the inorganic filler is not particularly limited, but is preferably 1 to 80% by mass, more preferably 20 to 75% by mass, and more preferably 30 to 70% by mass with respect to the entire resin composition. More preferably.
By setting the above range, the difference in linear expansion coefficient between the cured resin composition and the substrate or semiconductor chip having the electrode is reduced, and the stress generated during the temperature cycle test can be reduced, and after the curing Since it can suppress that the elasticity modulus of this resin composition becomes high too much, the connectivity and insulation reliability in an electronic device can be improved.
　本発明の樹脂組成物は、上述した成分のほか、カップリング剤や、フラックス作用を有する化合物の活性を高めるためのフラックス活性剤や、低応力剤、酸化防止剤、レベリング剤、その他の樹脂の相溶性、安定性、作業性等の各種特性を向上させるための各種添加剤を適宜含有してもよい。 In addition to the components described above, the resin composition of the present invention includes a coupling agent, a flux activator for enhancing the activity of a compound having a flux action, a low stress agent, an antioxidant, a leveling agent, and other resins. You may contain suitably the various additives for improving various characteristics, such as compatibility, stability, workability | operativity.
　本発明の樹脂組成物をフィルム状に成形するには、例えば、上記（Ａ）～（Ｃ）成分を含めた溶剤可溶性の成分を溶剤中に溶解させた後、無機充填材を加えて樹脂組成物ワニスを調製し、これを、ポリエステルシート等の剥離処理が施された支持体上に塗布し、所定の温度で、溶剤を除去し、乾燥させることにより得ることができる。 In order to form the resin composition of the present invention into a film, for example, after dissolving solvent-soluble components including the components (A) to (C) in the solvent, an inorganic filler is added to the resin composition. It can be obtained by preparing a product varnish, applying it to a support having been subjected to a peeling treatment such as a polyester sheet, removing the solvent at a predetermined temperature and drying it.
　なお、上記樹脂組成物ワニスの調製に用いられる溶剤としては、例えば、アセトン、メチルエチルケトン、メチルイソブチルケトン、ＤＩＢＫ（ジイソブチルケトン）、シクロヘキサノン、ＤＡＡ（ジアセトンアルコール）等のケトン類、ベンゼン、キシレン、トルエン等の芳香族炭化水素類、メチルアルコール、エチルアルコール、イソプロピルアルコール、ｎ－ブチルアルコール等のアルコール類、メチルセロソルブ、エチルセロソルブ、ブチルセロソルブ、メチルセロソルブアセテート、エチルセロソルブアセテート、ＢＣＳＡ（ブチロセルソルブアセテート）等のセロソルブ系、ＮＭＰ（Ｎ－メチル－２－ピロリドン）、ＴＨＦ（テトラヒドロフラン）、ＤＭＦ（ジメチルホルムアミド）、ＤＢＥ（二塩基酸エステル）、ＥＥＰ（３－エトキシプロピオン酸エチル）、ＤＭＣ（ジメチルカーボネート）等が挙げられる。 Examples of the solvent used for preparing the resin composition varnish include ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, DIBK (diisobutyl ketone), cyclohexanone, DAA (diacetone alcohol), benzene, xylene, and toluene. Aromatic hydrocarbons such as methyl alcohol, ethyl alcohol, isopropyl alcohol, n-butyl alcohol, methyl cellosolve, ethyl cellosolve, butyl cellosolve, methyl cellosolve acetate, ethyl cellosolve acetate, BCSA (butyrocellsolve acetate), etc. Cellosolve, NMP (N-methyl-2-pyrrolidone), THF (tetrahydrofuran), DMF (dimethylformamide), DBE (dibasic acid ester), EEP ( - ethyl ethoxypropionate), DMC (dimethyl carbonate) and the like.
　また、フィルム状の樹脂組成物の厚さ（平均）は、特に限定されないが、３～１００μｍ程度であるのが好ましく、５～５０μｍ程度であるのがより好ましい。 The thickness (average) of the film-like resin composition is not particularly limited, but is preferably about 3 to 100 μm, and more preferably about 5 to 50 μm.
［電子装置］
　次に、本発明の電子装置について説明する。本発明の電子装置は、上述した本発明の樹脂組成物の硬化物を有することを特徴とするものである。
　本発明の電子装置１００の製造方法の一例を以下に説明する。 [Electronic device]
Next, the electronic device of the present invention will be described. The electronic device of the present invention is characterized by having a cured product of the above-described resin composition of the present invention.
An example of a method for manufacturing the electronic device 100 of the present invention will be described below.
　まず、図１に示すように、電極１１１（金１１１ａ／ニッケル１１１ｂ／銅ピラー１１１ｃ）を第一基板１１０の一面に形成し、同様に電極１２１（半田バンプ１２１ａ／銅ピラー１２１ｂ）を第二基板１２０の一面に形成する。 First, as shown in FIG. 1, the electrode 111 (gold 111a / nickel 111b / copper pillar 111c) is formed on one surface of the first substrate 110, and the electrode 121 (solder bump 121a / copper pillar 121b) is similarly formed on the second substrate. 120 is formed on one surface.
　電極１１１と電極１２１との接合（半田バンプ１２１ａと金１１１ａとの接合）に用いられる半田としては、特に制限されず、錫、銀、鉛、亜鉛、ビスマス、インジウム及び銅からなる群から選択される少なくとも２種以上を含む合金等が挙げられる。半田の融点は、１００～３５０℃である。 The solder used for joining the electrode 111 and the electrode 121 (joining of the solder bump 121a and the gold 111a) is not particularly limited and is selected from the group consisting of tin, silver, lead, zinc, bismuth, indium and copper. And alloys containing at least two or more of them. The melting point of the solder is 100 to 350 ° C.
　次に、第一基板１１０の電極１１１と第二基板１２０の電極１２１との間にフィルム状の樹脂組成物１３０を導入し、図２に示すようにして、第一基板１１０の電極１１１と、第二基板１２０の電極１２１とを溶融接合しつつ、樹脂層１３０を第一基板１１０と第二基板１２０との間に充填する。 Next, a film-like resin composition 130 is introduced between the electrode 111 of the first substrate 110 and the electrode 121 of the second substrate 120, and as shown in FIG. The resin layer 130 is filled between the first substrate 110 and the second substrate 120 while being melt-bonded to the electrode 121 of the second substrate 120.
　すなわち、本実施形態において、第一基板１１０の電極１１１と第二基板１２０の電極１２１とで樹脂組成物１３０を挟むようにして積層するとともに、電極１１１と電極１２１とを溶融接合することで、樹脂組成物１３０が溶融して広がり、半田接合しつつ第一基板１１０と第二基板１２０との間を樹脂組成物１３０によって充填できる。 That is, in this embodiment, the resin composition 130 is laminated by sandwiching the resin composition 130 between the electrode 111 of the first substrate 110 and the electrode 121 of the second substrate 120, and melt-bonding the electrode 111 and the electrode 121. The material 130 melts and spreads, and the space between the first substrate 110 and the second substrate 120 can be filled with the resin composition 130 while soldering.
　半田接合は、半田の融点以上の温度であればよく、例えば１３０～３８０℃である。 Solder bonding may be performed at a temperature equal to or higher than the melting point of the solder, for example, 130 to 380 ° C.
　図３に示したように、第一基板１１０の電極１１１と、第二基板１２０の電極１２１とが溶融接合された後、樹脂組成物１３０を熱硬化する。これにより、電子装置１００とすることができる。 As shown in FIG. 3, after the electrode 111 of the first substrate 110 and the electrode 121 of the second substrate 120 are melt-bonded, the resin composition 130 is thermoset. Thereby, the electronic device 100 can be obtained.
　加熱温度は、樹脂組成物１３０の硬化温度以上の温度であればよく、適宜選択されるが、通常１００～２５０℃、好ましくは１５０～２００℃である。加熱時間は、樹脂組成物１３０の種類により、適宜選択されるが、通常、０．５～８時間、好ましくは１～３時間である。 The heating temperature may be any temperature as long as it is equal to or higher than the curing temperature of the resin composition 130, and is appropriately selected, but is usually 100 to 250 ° C, preferably 150 to 200 ° C. The heating time is appropriately selected depending on the type of the resin composition 130, but is usually 0.5 to 8 hours, preferably 1 to 3 hours.
　また、樹脂組成物１３０を硬化させるとき、加圧してもよい。加圧は、好ましくは０．１ＭＰａ以上、１０ＭＰａ以下が好ましく、０．５ＭＰａ以上、５ＭＰａ以下がより好ましい。
　これにより、樹脂組成物の硬化物中における空隙（ボイド）の発生を抑制することができる。加圧は、流体を用いて行われることが好ましく、例えば、窒素ガス、アルゴンガス、空気等のガスが挙げられる。安価な点では、空気が好ましいが、樹脂組成物の酸化を抑制するという観点では、窒素が好ましい。 Further, when the resin composition 130 is cured, it may be pressurized. The pressurization is preferably 0.1 MPa or more and 10 MPa or less, more preferably 0.5 MPa or more and 5 MPa or less.
Thereby, generation | occurrence | production of the space | gap (void) in the hardened | cured material of a resin composition can be suppressed. The pressurization is preferably performed using a fluid, and examples thereof include gases such as nitrogen gas, argon gas, and air. Air is preferable in terms of inexpensiveness, but nitrogen is preferable from the viewpoint of suppressing oxidation of the resin composition.
　加圧流体により加圧しながら、樹脂組成物１３０を硬化させる方法としては、例えば、圧力容器内に、加熱する処理対象物を設置し、次いで、圧力容器内に、加圧流体を導入して加圧しつつ、処理対象物を加熱する方法、更に、具体的には、加圧オーブン中に、処理対象物を設置し、加圧オーブン内に加圧用のガスを導入しつつ、加圧オーブンで処理対象物を加熱する方法が挙げられる。 As a method of curing the resin composition 130 while being pressurized with a pressurized fluid, for example, a processing object to be heated is placed in a pressure vessel, and then the pressurized fluid is introduced into the pressure vessel and added. A method of heating an object to be processed while pressing, more specifically, the object to be processed is placed in a pressure oven, and processing is performed in a pressure oven while introducing a gas for pressurization into the pressure oven. The method of heating a target object is mentioned.
　なお、本発明は上述の実施の形態に限定されるものではなく、その要旨を逸脱しない範囲で各種の変形を許容する。 In addition, this invention is not limited to the above-mentioned embodiment, A various deformation | transformation is accept | permitted in the range which does not deviate from the summary.
　なお、上述した実施の形態および複数の変形例は、その内容が相反しない範囲で組み合わせることができる。また、上述した実施の形態および変形例では、各部の構造などを具体的に説明したが、その構造などは本願発明を満足する範囲で各種に変更することができる。 It should be noted that the above-described embodiment and a plurality of modifications can be combined within a range in which the contents do not conflict. Further, in the above-described embodiments and modifications, the structure of each part has been specifically described, but the structure and the like can be changed in various ways within a range that satisfies the present invention.
＜接着シート＞
　次に、本発明の接着シートについて説明する。
　本発明の接着シートは、上記本発明のフィルム状の電極接続用樹脂組成物（以下、樹脂組成物ともいう。）と、ベースフィルムとを有することを特徴とするものである。
　図４に、本発明の接着シートの一形態を示す。図４において、接着シート２００は、ベースフィルム２０２上に樹脂組成物２０１が形成された構造を有するものである。 <Adhesive sheet>
Next, the adhesive sheet of the present invention will be described.
The adhesive sheet of the present invention is characterized by having the above-described resin composition for electrode connection of the present invention (hereinafter also referred to as a resin composition) and a base film.
FIG. 4 shows an embodiment of the adhesive sheet of the present invention. In FIG. 4, an adhesive sheet 200 has a structure in which a resin composition 201 is formed on a base film 202.
　本発明の接着シートの形態は図４に示したものに限定されるものではなく、例えば、図４において、ベースフィルムが積層されているのと反対側の接着フィルム側表面に、樹脂組成物表面を保護するためのカバーフィルムを有するものであってもよい。
　ベースフィルム２０２は、例えば、複数の個別電極、個別回路が設けられたウエハ表面に、接着シート２００（接着フィルム）をラミネートする際に、接着フィルムの下地層（支持層）として機能するものである。 The form of the adhesive sheet of the present invention is not limited to that shown in FIG. 4. For example, in FIG. 4, the surface of the resin composition on the surface of the adhesive film opposite to the base film is laminated. You may have a cover film for protecting.
The base film 202 functions as a base layer (support layer) of the adhesive film when the adhesive sheet 200 (adhesive film) is laminated on the wafer surface provided with a plurality of individual electrodes and individual circuits, for example. .
　ここで、ベースフィルムの材料としては特に限定されないが、例えば、ポリ塩化ビニル、ポリ塩化ビニリデン、ポリスチレン、スチレン・アクリロニトリル共重合体、スチレン・ブタジエン・アクリロニトリル共重合体、ポリエチレン、高密度ポリエチレン、ポリプロピレン、ポリアセタール、ポリビニルアルコール、ポリメチルメタクリレート、メタクリル・スチレン共重合体、酢酸セルロース、ポリカーボネート、ポリエステル、ナイロン、エチレン・ビニルアルコール共重合体、エチレン・酢酸ビニル共重合体、ポリブチレンテレフタレート、等の樹脂材料等が挙げられ、これらのうちの１種または２種以上の混合物を用いることができる。
　本発明の接着シートは、上述したように、樹脂組成物ワニスを、ベースフィルム上に塗工して、その後、所定の温度で、実質的に溶媒を含まない程度にまで乾燥させることにより得ることができる。そして、必要に応じて、さらに、樹脂組成物上にカバーテープを積層した形態とすることもできる。 Here, the material of the base film is not particularly limited. For example, polyvinyl chloride, polyvinylidene chloride, polystyrene, styrene / acrylonitrile copolymer, styrene / butadiene / acrylonitrile copolymer, polyethylene, high density polyethylene, polypropylene, Resin materials such as polyacetal, polyvinyl alcohol, polymethyl methacrylate, methacryl / styrene copolymer, cellulose acetate, polycarbonate, polyester, nylon, ethylene / vinyl alcohol copolymer, ethylene / vinyl acetate copolymer, polybutylene terephthalate, etc. And a mixture of one or more of these can be used.
As described above, the adhesive sheet of the present invention is obtained by coating the resin composition varnish on the base film, and then drying the resin composition varnish at a predetermined temperature to an extent that does not substantially contain a solvent. Can do. And it can also be set as the form which laminated | stacked the cover tape on the resin composition as needed.
＜ダイシングテープ一体型接着シート＞
　次に、本発明のダイシングテープ一体型接着シートについて説明する。
　本発明のダイシングテープ一体型接着シートは、上記本発明の接着シートと、ダイシングテープとを有することを特徴とする。
　図５に、本発明のダイシングテープ一体型接着シートの一形態を示す。図５において、ダイシングテープ一体型接着シート２１０は、ダイシングテープ２１３上に接着シート２１１が形成された構造を有するものである。図５に示した形態では、ダイシングテープ２１３は、ダイシングテープの基材層２１３ａと、ダイシングテープの粘着層２１３ｂの２層からなるものであり、ダイシングテープの粘着層２１３ｂと接着シート２１１とが接するように積層されている。 <Dicing tape integrated adhesive sheet>
Next, the dicing tape integrated adhesive sheet of the present invention will be described.
The dicing tape-integrated adhesive sheet of the present invention includes the adhesive sheet of the present invention and a dicing tape.
FIG. 5 shows an embodiment of the dicing tape-integrated adhesive sheet of the present invention. In FIG. 5, a dicing tape integrated adhesive sheet 210 has a structure in which an adhesive sheet 211 is formed on a dicing tape 213. In the form shown in FIG. 5, the dicing tape 213 is composed of two layers, a base layer 213 a of the dicing tape and an adhesive layer 213 b of the dicing tape, and the adhesive layer 213 b of the dicing tape and the adhesive sheet 211 are in contact with each other. Are stacked.
　本発明のダイシングテープ一体型接着シートの形態は図５に示したものに限定されるものではなく、例えば、ダイシングテープの粘着層２１３ｂと接着シート２１１との間に、介在層を有した形態とすることもできる。この場合、ダイシングテープの粘着層は、介在層よりも粘着性が高いものが好ましい。これにより、接着シート２１１に対する介在層の密着力よりも、介在層および基材層に対するダイシングテープの粘着層の密着力が大きくなる。そのため、電子部品の製造工程において、例えば、半導体チップピックアップ工程のような電子部品の製造工程において、剥離を生じさせるべき所望の界面（すなわち介在層と接着シートとの界面）で剥離を生じさせることができる。 The form of the dicing tape-integrated adhesive sheet of the present invention is not limited to that shown in FIG. 5, for example, a form having an intervening layer between the adhesive layer 213 b of the dicing tape and the adhesive sheet 211. You can also In this case, the adhesive layer of the dicing tape is preferably higher in adhesiveness than the intervening layer. Thereby, the adhesive force of the adhesion layer of the dicing tape with respect to an intervening layer and a base material layer becomes larger than the adhesive force of the intervening layer with respect to the adhesive sheet 211. Therefore, in an electronic component manufacturing process, for example, in an electronic component manufacturing process such as a semiconductor chip pickup process, peeling occurs at a desired interface (that is, an interface between an intervening layer and an adhesive sheet) that should cause peeling. Can do.
＜ダイシングテープ＞
　本発明のダイシングテープ一体型接着シートに用いられるダイシングテープは、一般的に用いられるどのようなダイシングテープでも用いることができる。
　ダイシングテープの基材層２１３ａの構成材料としては特に限定されないが、例えば、ポリエチレン、ポリプロピレン、ポリブテン、ポリブタジエン、ポリメチルペンテン、ポリ塩化ビニル、塩化ビニル共重合体、ポリエチレンテレフタレート、ポリブチレンテレフタレート、ポリウレタン、エチレン酢酸ビニル共重合体、アイオノマー、エチレン・（メタ）アクリル酸共重合体、エチレン・（メタ）アクリル酸エステル共重合体、ポリスチレン、ビニルポリイソプレン、ポリカーボネート、ポリオレフィン等が挙げられ、これらのうちの１種または２種以上の混合物を用いることができる。 <Dicing tape>
The dicing tape used for the dicing tape-integrated adhesive sheet of the present invention can be any dicing tape that is generally used.
The constituent material of the base material layer 213a of the dicing tape is not particularly limited. For example, polyethylene, polypropylene, polybutene, polybutadiene, polymethylpentene, polyvinyl chloride, vinyl chloride copolymer, polyethylene terephthalate, polybutylene terephthalate, polyurethane, Examples include ethylene vinyl acetate copolymer, ionomer, ethylene / (meth) acrylic acid copolymer, ethylene / (meth) acrylic acid ester copolymer, polystyrene, vinyl polyisoprene, polycarbonate, polyolefin, etc. One kind or a mixture of two or more kinds can be used.
　ダイシングテープの基材層２１３ａの平均厚さは、特に限定されないが、５～２００μｍであるのが好ましく、３０～１５０μｍ程度であるのがより好ましい。これにより、基材層は、適度な剛性を有するものとなるため、接着シートを確実に支持して、ダイシングテープ一体型接着シートの取扱いを容易にするとともに、ダイシングテープ一体型接着シートが適度に湾曲することで、接着シートと電極を有する被接体との密着性を高めることができる。
　ダイシングテープの基材層２１３ａの製法としては特に限定されないが、カレンダー法、押出成形法などの一般的な成形方法を用いることができる。基材層２１３ａの表面には、粘着層２１３ｂを構成する材料と反応する官能基、例えば、ヒドロキシル基またはアミノ基などが露出していることが好ましい。また、基材層２１３ａと粘着層２１３ｂとの密着性を向上するために、基材層２１３ａの表面をコロナ処理またはアンカーコート等で表面処理しておくのが好ましい。 The average thickness of the substrate layer 213a of the dicing tape is not particularly limited, but is preferably 5 to 200 μm, more preferably about 30 to 150 μm. As a result, since the base material layer has appropriate rigidity, the adhesive sheet is securely supported, and the handling of the dicing tape integrated adhesive sheet is facilitated, and the dicing tape integrated adhesive sheet is appropriately By curving, it is possible to improve the adhesion between the adhesive sheet and the adherend having the electrode.
Although it does not specifically limit as a manufacturing method of the base material layer 213a of a dicing tape, Common molding methods, such as a calendar method and an extrusion molding method, can be used. It is preferable that a functional group that reacts with the material constituting the adhesive layer 213b, such as a hydroxyl group or an amino group, is exposed on the surface of the base material layer 213a. In order to improve the adhesion between the base material layer 213a and the adhesive layer 213b, the surface of the base material layer 213a is preferably surface-treated with a corona treatment or an anchor coat.
　また、ダイシングテープの粘着層２１３ｂの構成材料としては特に限定されないが、例えば、アクリル系粘着剤、ゴム系粘着剤等を含む樹脂組成物で構成されているものを用いることができる。
　アクリル系粘着剤としては、例えば（メタ）アクリル酸およびそれらのエステルで構成される樹脂、（メタ）アクリル酸およびそれらのエステルと、それらと共重合可能な不飽和単量体（例えば酢酸ビニル、スチレン、アクリロニトリル等）との共重合体等が用いられる。また、これらの共重合体を２種類以上混合してもよい。 In addition, the constituent material of the adhesive layer 213b of the dicing tape is not particularly limited, but for example, a material composed of a resin composition containing an acrylic adhesive, a rubber adhesive, or the like can be used.
Examples of the acrylic pressure-sensitive adhesive include resins composed of (meth) acrylic acid and esters thereof, (meth) acrylic acid and esters thereof, and unsaturated monomers copolymerizable therewith (for example, vinyl acetate, Copolymers with styrene, acrylonitrile, etc.) are used. Two or more kinds of these copolymers may be mixed.
　これらの中でも（メタ）アクリル酸メチル、（メタ）アクリル酸エチルヘキシル、及び、（メタ）アクリル酸ブチルからなる群から選ばれる１種以上と、（メタ）アクリル酸ヒドロキシエチル、及び、酢酸ビニルの中から選ばれる１種以上との共重合体が好ましい。これにより、ダイシングテープの粘着層が粘着する相手（例えば、上述した介在層、基材層等）との密着性や粘着性の制御が容易になる。
　上記ダイシングテープの粘着層２１３ｂの平均厚さは、特に限定されないが、１μｍ～１００μｍ程度であるのが好ましく、特に３～２０μｍ程度であるのがより好ましい。ダイシングテープの粘着層２１３ｂの平均厚さが上記範囲内であれば、ダイシングテープの粘着層２１３ｂの形状追従性が確保され、半導体ウエハなどの接着フィルムの被接物に対する密着性をより高めることができる。 Among these, at least one selected from the group consisting of methyl (meth) acrylate, ethylhexyl (meth) acrylate, and butyl (meth) acrylate, and hydroxyethyl (meth) acrylate and vinyl acetate The copolymer with 1 or more types chosen from is preferable. Thereby, it becomes easy to control the adhesiveness and adhesiveness with a partner (for example, the above-described intervening layer, base material layer, etc.) to which the adhesive layer of the dicing tape adheres.
The average thickness of the pressure-sensitive adhesive layer 213b of the dicing tape is not particularly limited, but is preferably about 1 μm to 100 μm, and more preferably about 3 to 20 μm. If the average thickness of the pressure-sensitive adhesive layer 213b of the dicing tape is within the above range, the shape following property of the pressure-sensitive adhesive layer 213b of the dicing tape is ensured, and the adhesiveness of the adhesive film such as a semiconductor wafer to the contacted object can be further increased. it can.
　上記ダイシングテープの製造方法としては特に限定されないが、例えば、バーコート法、ダイコート法、グラビアコート法等により、ダイシングテープの基材層２１３ａ上に粘着層２１３ｂを塗工することにより製造することができる。また、粘着層２１３ｂは別途粘着層２１３ｂ用基材上に塗工した後に、ダイシングテープの基材層２１３ａ上にラミネートするなどの方法により転写して製造することもできる。 Although it does not specifically limit as a manufacturing method of the said dicing tape, For example, it can manufacture by apply | coating the adhesion layer 213b on the base material layer 213a of a dicing tape by the bar-coat method, the die-coating method, the gravure coating method etc. it can. Alternatively, the adhesive layer 213b may be separately manufactured by coating the adhesive layer 213b on the base material for the adhesive layer 213b and then transferring the adhesive layer 213b on the base material layer 213a of the dicing tape.
　介在層を設ける場合は、上記粘着層２１３ｂ上にさらに介在層を塗工してもよいし、介在層を別途、介在層用基材上に塗工したものをラミネートするなどの方法により製造することもできる。
　また、本発明のダイシングテープ一体型接着シートは、例えば、基材層２１３ａ、粘着層２１３ｂ、及び、介在層を有するダイシングテープと、本発明の接着シート（樹脂組成物＋ベースフィルム）とを、上記介在層と接着シートとが接するようにラミネートすることにより得ることもできる。 In the case of providing an intervening layer, the intervening layer may be further coated on the adhesive layer 213b, or the intervening layer is separately produced by laminating a material coated on the intervening layer base material. You can also
The dicing tape-integrated adhesive sheet of the present invention includes, for example, a dicing tape having a base material layer 213a, an adhesive layer 213b, and an intervening layer, and an adhesive sheet (resin composition + base film) of the present invention. It can also be obtained by laminating such that the intervening layer and the adhesive sheet are in contact with each other.
<バックグラインドテープ一体型接着シート>
　次に、本発明のバックグラインドテープ一体型接着シートについて説明する。本発明のバックグラインドテープ一体型接着シートは、上記本発明の接着シートと、バックグランドテープとを有することを特徴とする。 <Back grind tape integrated adhesive sheet>
Next, the back grind tape integrated adhesive sheet of the present invention will be described. The back grind tape-integrated adhesive sheet of the present invention includes the adhesive sheet of the present invention and a background tape.
上記バックグラインドテープは、特に限定されるものではないが、基材の片面に粘着剤層が形成されているものを挙げることができる。前記基材としては特に限定されるものではないが、例えば、ポリエチレンテレフタレート（ＰＥＴ）、ポリエチレン（ＰＥ）、ポリプロピレン（ＰＰ）、エチレン・酢酸ビニル共重合体（ＥＶＡ）等の樹脂からなるものが挙げられる。 Although the said back grind tape is not specifically limited, What has the adhesive layer formed in the single side | surface of a base material can be mentioned. Although it does not specifically limit as said base material, For example, what consists of resin, such as a polyethylene terephthalate (PET), polyethylene (PE), a polypropylene (PP), an ethylene-vinyl acetate copolymer (EVA), is mentioned. It is done.
　前記粘着剤層を形成する粘着剤としては、特に限定されるものではないが、重合性オリゴマーを含有し、これが重合架橋することにより粘着力が低下する粘着剤からなることが好ましい。このような粘着剤としては、例えば、分子内に放射線重合性の不飽和結合を有してなるアクリル酸アルキルエステル系及び／又はメタクリル酸アルキルエステル系の重合性ポリマーと、放射線重合性の多官能オリゴマー又はモノマーとを主成分として含んでなる光硬化型粘着剤等が挙げられる。 The pressure-sensitive adhesive forming the pressure-sensitive adhesive layer is not particularly limited, but is preferably composed of a pressure-sensitive adhesive containing a polymerizable oligomer and having a pressure-sensitive adhesive force lowered by polymerization crosslinking. As such an adhesive, for example, an acrylic acid alkyl ester-based and / or methacrylic acid alkyl ester-based polymerizable polymer having a radiation-polymerizable unsaturated bond in the molecule, and a radiation-polymerizable polyfunctional Examples thereof include a photocurable pressure-sensitive adhesive comprising an oligomer or a monomer as a main component.
前記重合性ポリマーは、例えば、分子内に官能基を持った（メタ）アクリル系ポリマーをあらかじめ合成し、分子内に前記官能基と反応する官能基と放射線重合性の不飽和結合とを有する化合物と反応させることにより得ることができる。なお、本明細書において（メタ）アクリル系ポリマーとは、アクリル系ポリマー及びメタクリル系ポリマーを意味するものとする。 The polymerizable polymer is, for example, a compound having a functional group that reacts with the functional group in the molecule and a radiation-polymerizable unsaturated bond, in advance, by synthesizing a (meth) acrylic polymer having a functional group in the molecule. It can obtain by making it react. In the present specification, the (meth) acrylic polymer means an acrylic polymer and a methacrylic polymer.
前記光硬化型粘着剤は、前記重合性ポリマー及び前記多官能オリゴマー又はモノマー以外に、光重合開始剤を配合することが好ましい。これにより、紫外線等の活性光線を照射することにより、粘着剤層とフィルム状樹脂組成物層との界面の密着力を確実に低下させることができるため、粘着剤層の残渣がフィルム状樹脂組成物層に残ることなく、バックグラインドテープを確実に剥離することができきる。 The photocurable pressure-sensitive adhesive preferably contains a photopolymerization initiator in addition to the polymerizable polymer and the polyfunctional oligomer or monomer. Thereby, since the adhesive force of the interface of an adhesive layer and a film-form resin composition layer can be reduced reliably by irradiating actinic rays, such as an ultraviolet-ray, the residue of an adhesive layer is a film-form resin composition The back grind tape can be reliably peeled off without remaining in the material layer.
　上記バックグラインドテープの製造方法としては特に限定されないが、例えば、バーコート法、ダイコート法、グラビアコート法等により、バックグラインドテープの基材層上に粘着剤層を塗工することにより製造することができる。また、粘着剤層は別途粘着剤層形成用の基材上に塗工した後に、バックグラインドテープの基材層上にラミネートするなどの方法により転写して製造することもできる。
　このようにして作製されたバックグラインドテープに上記フィルム状樹脂組成物をラミネートすることで、バックグラインドテープ一体型接着シートを作製することが可能となる。 Although it does not specifically limit as the manufacturing method of the said back grind tape, For example, it manufactures by apply | coating an adhesive layer on the base material layer of a back grind tape by the bar-coat method, the die-coating method, the gravure coating method etc. Can do. Further, the pressure-sensitive adhesive layer can be separately produced by coating on a base material for forming a pressure-sensitive adhesive layer and then transferring it by a method such as laminating on the base material layer of the back grind tape.
By laminating the film-like resin composition on the back grind tape thus produced, a back grind tape integrated adhesive sheet can be produced.
<バックグラインドテープ兼ダイシングテープ一体型接着シート>
　次に、本発明のバックグラインドテープ兼ダイシングテープ一体型接着シートについて説明する。
　本発明のバックグラインドテープ兼ダイシングテープ一体型接着シート３００は、図６に示すようにバックグラインドテープ兼ダイシングテープ３０１と、フィルム状樹脂組成物３０２とで構成されている。図示しないが、バックグラインドテープ兼ダイシングテープ兼ダイシングテープ３０１とフィルム状樹脂組成物３０２との間には、離型フィルムが設けられていても良い。これにより、バックグラインドテープ兼ダイシングテープ３０１とフィルム状樹脂組成物３０２との間の剥離が容易となり、半導体ウエハをダイシング後の半導体素子のピックアップ性を向上することができる。 <Back grinding tape and dicing tape integrated adhesive sheet>
Next, the back grind tape and dicing tape integrated adhesive sheet of the present invention will be described.
The back grind tape / dicing tape-integrated adhesive sheet 300 of the present invention comprises a back grind tape / dicing tape 301 and a film-like resin composition 302 as shown in FIG. Although not shown, a release film may be provided between the back grind tape / dicing tape / dicing tape 301 and the film-like resin composition 302. Thereby, peeling between the back grind tape / dicing tape 301 and the film-shaped resin composition 302 is facilitated, and the pick-up property of the semiconductor element after dicing the semiconductor wafer can be improved.
　また、バックグラインドテープ兼ダイシングテープ３０１としては、例えばポリエチレン、ポリプロピレン等のポリオレフィン、エチレン酢酸ビニル共重合体、ポリエステル、ポリイミド、ポリエチレンテレフタレート、ポリ塩化ビニル、ポリアミド、ポリウレタン等により作製された耐熱性や耐薬品性の優れたフィルムであれば使用できる。バックグラインドテープ兼ダイシングテープ１の厚さは、特に限定されないが、通常３０～５００μｍが好ましい。 Further, as the back grind tape / dicing tape 301, for example, heat resistance and resistance produced by polyolefin such as polyethylene and polypropylene, ethylene vinyl acetate copolymer, polyester, polyimide, polyethylene terephthalate, polyvinyl chloride, polyamide, polyurethane and the like. Any film having excellent chemical properties can be used. The thickness of the back grind tape / dicing tape 1 is not particularly limited, but is usually preferably 30 to 500 μm.
　次に、本発明のバックグラインドテープ兼ダイシングテープ一体型接着シート３００の製造方法について簡単に説明する。
　フィルム状樹脂組成物３０２は、架橋反応可能な樹脂およびフラックス活性を有する化合物等を混合し、ポリエステルシート等の剥離基材３２１上に塗布し、所定の温度で乾燥することにより得られる。これをハーフカットすることにより円形状のフィルム状樹脂組成物３０２を得た。
　そして、その上にバックグラインドテープ兼ダイシングテープ３０１を積層することで、バックグラインドテープ兼ダイシングテープ３０１、フィルム状樹脂組成物３０２、剥離基材３２１で構成されるバックグラインドテープ機能付きおよびダイシングテープ機能つき接着シート３００を得ることができる（図７）。 Next, a method for manufacturing the back grind tape and dicing tape integrated adhesive sheet 300 of the present invention will be briefly described.
The film-like resin composition 302 is obtained by mixing a crosslinkable resin, a compound having a flux activity, and the like, applying the mixture on a release substrate 321 such as a polyester sheet, and drying at a predetermined temperature. This was half cut to obtain a circular film-shaped resin composition 302.
Then, by laminating a back grind tape / dicing tape 301 thereon, a back grind tape function and a dicing tape function constituted by the back grind tape / dicing tape 301, the film-like resin composition 302, and the peeling substrate 321 are provided. A glue sheet 300 can be obtained (FIG. 7).
　このようにして形成されるバックグラインドテープ兼ダイシングテープ一体型接着シート３００のフィルム状樹脂組成物３０２の厚さは、特に限定されないが、３μｍ以上、１００μｍ以下が好ましく、特に５μｍ以上、５０μｍ以下であることがさらに好ましい。厚さが、前記下限値未満であるとバックグラインドテープ兼ダイシングテープ一体型接着シート３００としての効果が低下する場合があり、前記上限値を超えると製品の製造が難しく厚み精度が低下する場合がある。 The thickness of the film-like resin composition 302 of the back-grind tape / dicing tape-integrated adhesive sheet 300 formed in this way is not particularly limited, but is preferably 3 μm or more and 100 μm or less, particularly 5 μm or more and 50 μm or less. More preferably it is. If the thickness is less than the lower limit value, the effect as the back grind tape / dicing tape-integrated adhesive sheet 300 may be reduced. If the thickness exceeds the upper limit value, it may be difficult to manufacture the product and the thickness accuracy may be reduced. is there.
　バックグラインドテープ兼ダイシングテープ一体型接着シート３００のフィルム状樹脂組成物３０２を常温から１０℃／分の昇温速度で溶融状態まで昇温したときに初期は溶融粘度が減少し、最低溶融粘度に到達した後、さらに上昇するような特性を有する場合の前記最低溶融粘度は、特に限定されないが、５０，０００Ｐａ・ｓ以下が好ましく、２０，０００Ｐａ・ｓ以下がより好ましく、１０，０００Ｐａ・ｓ以下であればさらに好ましい。また、０．１Ｐａ・ｓ以上が好ましく、１Ｐａ・ｓ以上がより好ましく、１０Ｐａ・ｓ以上であればさらに好ましい。
　溶融粘度を前記下限値以上とすることにより、加熱時にフィルム状樹脂組成物３０２が被接着物からはみ出すことによる接着信頼性の低下を抑制でき、かつはみ出しによる周辺部材の汚染も抑制することができる。さらに、気泡の発生、上下回路基板の未充填等の不良も防止することができる。さらに、半田が濡れ拡がりすぎてしまい、隣接電極間でショートするといった問題も防止することが可能となる。また、前記上限値以下とすることで、半田バンプと回路基板電極が金属接合する際に、半田バンプと回路基板電極間の樹脂が排除されるため接合不良を抑制することが可能となる。 When the film-like resin composition 302 of the back-grind tape / dicing tape-integrated adhesive sheet 300 is heated from room temperature to a molten state at a temperature rising rate of 10 ° C./min, the initial melt viscosity is reduced to the minimum melt viscosity. The minimum melt viscosity in the case of having a property of further increasing after reaching is not particularly limited, but is preferably 50,000 Pa · s or less, more preferably 20,000 Pa · s or less, and 10,000 Pa · s or less. More preferably. Further, it is preferably 0.1 Pa · s or more, more preferably 1 Pa · s or more, and even more preferably 10 Pa · s or more.
By setting the melt viscosity to the lower limit value or more, it is possible to suppress a decrease in adhesion reliability due to the film-like resin composition 302 protruding from the adherend during heating, and it is possible to suppress contamination of peripheral members due to the protrusion. . Furthermore, defects such as generation of bubbles and unfilling of the upper and lower circuit boards can be prevented. Furthermore, it is possible to prevent a problem that the solder is wet and spreads too much and short-circuits between adjacent electrodes. Further, by setting the value to the upper limit value or less, since the resin between the solder bump and the circuit board electrode is eliminated when the solder bump and the circuit board electrode are metal-bonded, it is possible to suppress the bonding failure.
　フィルム状樹脂組成物３０２の溶融粘度は、例えば以下の測定方法により求められる。
　厚み１００μｍのフィルム状樹脂組成物を、粘弾性測定装置（ＲｈｅｏＳｔｒｅｓｓＲＳ－１０ＨＡＡＫＥ社製）粘弾性測定装置（サーモフィッシャーサイエンティフィック社製「ＭＡＲＳ」）を用いて、パラレルプレート２０ｍｍφ、ギャップ０．０５ｍｍ、昇温速度１０℃／ｍｉｎ、周波数０．１Ｈｚで測定した溶融粘度が最小となる値を測定値とした。 The melt viscosity of the film-like resin composition 302 is obtained by, for example, the following measurement method.
Using a viscoelasticity measuring device (manufactured by RheoStressRS-10HAAKE) viscoelasticity measuring device (manufactured by Thermo Fisher Scientific “MARS”), a film-shaped resin composition having a thickness of 100 μm is parallel plate 20 mmφ, gap 0.05 mm, The value at which the melt viscosity measured at a rate of temperature increase of 10 ° C./min and a frequency of 0.1 Hz was minimized was taken as the measured value.
　フィルム状樹脂組成物３０２は、特に限定されないが、半導体素子の表面が認識可能な程度の透明性を有することが好ましい。これにより、チップと基板を接合する時の位置合わせを容易にすることができる。
　より具体的に、フィルム状樹脂組成物３０２は、６３０ｎｍでの透過率が１５％以上であることが好ましく、特に２５～１００％であることがより好ましい。透過率が前記範囲内であると、特に半導体素子の認識性に優れ、接続率を向上することができる。 The film-like resin composition 302 is not particularly limited, but preferably has transparency to the extent that the surface of the semiconductor element can be recognized. Thereby, the position alignment when joining a chip | tip and a board | substrate can be made easy.
More specifically, the film-like resin composition 302 preferably has a transmittance at 630 nm of 15% or more, more preferably 25 to 100%. When the transmittance is within the above range, the recognizability of the semiconductor element is particularly excellent, and the connection rate can be improved.
（電子装置の製造方法および電子装置）
　次に、電子装置の製造方法について説明する。
　上述の方法で得られたバックグラインドテープ兼ダイシングテープ一体型接着シート３００の剥離基材３２１を剥離し、フィルム状樹脂組成物３０２と半導体ウエハ３０３の機能面３３１とが当接するように接着する（図８）。 (Electronic device manufacturing method and electronic device)
Next, a method for manufacturing an electronic device will be described.
The peeling substrate 321 of the back grind tape and dicing tape integrated adhesive sheet 300 obtained by the above-described method is peeled off and bonded so that the film-like resin composition 302 and the functional surface 331 of the semiconductor wafer 303 come into contact with each other ( FIG. 8).
　次に、バックグラインドテープ兼ダイシングテープ３０１の上側の面（図９中の上側）を、研磨装置の研磨ステージ３０４に固定する。研磨装置は、特に限定されることは無く市販されているものを用いることができる。ここで、バックグラインドした後の半導体ウエハ３０３の厚さは、特に限定されないが、１０μｍ～３００μｍ程度とすることが好ましく、より好ましくは１０μｍ以上１００μｍ以下である。
　本発明のバックグラインドテープ兼ダイシングテープ一体型接着シート３００は、フィルム状樹脂組成物３０２がフラックス活性を有する化合物を含む樹脂組成物のため、半導体ウエハ３０３の機能面３３１に直接ラミネートすることが可能である。 Next, the upper surface (upper side in FIG. 9) of the back grind tape / dicing tape 301 is fixed to the polishing stage 304 of the polishing apparatus. The polishing apparatus is not particularly limited, and a commercially available apparatus can be used. Here, the thickness of the semiconductor wafer 303 after back grinding is not particularly limited, but is preferably about 10 μm to 300 μm, more preferably 10 μm to 100 μm.
The back grind tape / dicing tape integrated adhesive sheet 300 of the present invention can be directly laminated on the functional surface 331 of the semiconductor wafer 303 because the film-like resin composition 302 is a resin composition containing a compound having flux activity. It is.
　次に、バックグラインド後の半導体用ウエハ３０３を、バックグラインドテープ兼ダイシングテープ３０１がダイサーテーブル３０５の上面（図１０中の上側）と接するようにダイサーテーブル３０５に設置する（図１０）。次に、半導体ウエハ３０３の周囲にウエハリング３０６を設置して、半導体ウエハ３０３を固定する。そして、ブレード３０７で半導体ウエハ３０３を切断して、半導体ウエハ３０３を個片化してフィルム状樹脂組成物３０２を有する半導体素子を得る。この際、バックグラインドテープ兼ダイシングテープ一体型接着シート３００は、緩衝作用を有しており、半導体ウエハ３０３を切断する際の半導体素子の割れ、欠け等を防止している。なお、バックグラインドテープ兼ダイシングテープ一体型接着シート３００に、半導体ウエハ３０３およびウエハリング３０６を予め貼着した後に、ダイサーテーブル３０５に設置しても良い。 Next, the semiconductor wafer 303 after the back grinding is placed on the dicer table 305 so that the back grinding tape / dicing tape 301 is in contact with the upper surface (the upper side in FIG. 10) of the dicer table 305 (FIG. 10). Next, a wafer ring 306 is installed around the semiconductor wafer 303 to fix the semiconductor wafer 303. Then, the semiconductor wafer 303 is cut with the blade 307 to divide the semiconductor wafer 303 into individual pieces to obtain a semiconductor element having the film-like resin composition 302. At this time, the back grind tape / dicing tape-integrated adhesive sheet 300 has a buffering action, and prevents the semiconductor element from being cracked or chipped when the semiconductor wafer 303 is cut. Alternatively, the semiconductor wafer 303 and the wafer ring 306 may be attached in advance to the back grind tape / dicing tape integrated adhesive sheet 300 and then placed on the dicer table 305.
　次に、バックグラインドテープ兼ダイシングテープ一体型接着シート３００をエキスパンド装置で伸ばして、個片化したフィルム状樹脂組成物３０２を有する半導体素子同士を一定の間隔に開き、その後にピックアップして、基板に搭載して電子装置を得る。
　このように、本発明のバックグラインドテープ兼ダイシングテープ一体型接着シートは、バックグラインドテープ機能と、ダイシングテープ機能と有し、かつ接着剤層がフラックス活性を有するのでフラックス塗布工程等を省略できる機能等を有している。そのため、フラックス洗浄工程が不要で生産性に優れ、かつ半導体ウエハの作業性を向上させることができる。 Next, the back grind tape / dicing tape-integrated adhesive sheet 300 is stretched with an expanding device, and the semiconductor elements having the film-shaped resin composition 302 separated into pieces are opened at regular intervals, and then picked up to obtain a substrate. To get an electronic device.
Thus, the back grind tape and dicing tape integrated adhesive sheet of the present invention has a back grind tape function and a dicing tape function, and the adhesive layer has a flux activity, so the function of omitting the flux application process and the like can be omitted. Etc. Therefore, the flux cleaning process is unnecessary, the productivity is excellent, and the workability of the semiconductor wafer can be improved.
　次に、本発明の実施例について説明する。 Next, examples of the present invention will be described.
　実施例、比較例において樹脂組成物を調製するのに使用した原材料は以下の通りである。 The raw materials used to prepare the resin compositions in Examples and Comparative Examples are as follows.
（Ａ）ナフタレン骨格を有する多官能エポキシ樹脂
（ａ１）２官能ナフタレン型エポキシ樹脂（ＤＩＣ株式会社製／「ＥＰＩＣＬＯＮ　ＨＰ－４７７０」）、エポキシ当量２０４
（ａ２）３官能ナフタレン型エポキシ樹脂（ＤＩＣ株式会社製／「ＥＰＩＣＬＯＮ　ＨＰ－４７５０」）、エポキシ当量１８８
（ａ３）４官能ナフタレン型エポキシ樹脂（ＤＩＣ株式会社製／「ＥＰＩＣＬＯＮ　ＨＰ－４７００」）、エポキシ当量１６５ (A) Polyfunctional epoxy resin having a naphthalene skeleton (a1) Bifunctional naphthalene type epoxy resin (manufactured by DIC Corporation / “EPICLON HP-4770”), epoxy equivalent 204
(A2) Trifunctional naphthalene type epoxy resin (manufactured by DIC Corporation / “EPICLON HP-4750”), epoxy equivalent 188
(A3) Tetrafunctional naphthalene type epoxy resin (DIC Corporation / “EPICLON HP-4700”), epoxy equivalent 165
（Ｂ）１分子中に、フェノール性水酸基と、カルボキシル基とを有する化合物
（ｂ１）フェノールフタリン（東京化成工業株式会社製）
（ｂ２）ジフェノール酸（東京化成工業株式会社製）
（ｂ３）２－ヒドロキシ安息香酸（東京化成工業株式会社製） (B) Compound having phenolic hydroxyl group and carboxyl group in one molecule (b1) Phenolphthaline (manufactured by Tokyo Chemical Industry Co., Ltd.)
(B2) Diphenolic acid (manufactured by Tokyo Chemical Industry Co., Ltd.)
(B3) 2-hydroxybenzoic acid (manufactured by Tokyo Chemical Industry Co., Ltd.)
（Ｃ）フィルム形成性樹脂
（ｃ１）フェノキシ樹脂（三菱化学株式会社製／「ＹＸ６９５４」）、数平均分子量１４０００ (C) Film-forming resin (c1) Phenoxy resin (Mitsubishi Chemical Corporation / “YX6954”), number average molecular weight 14000
その他
（ｄ）ビスフェノールＦ型エポキシ樹脂（三菱化学株式会社製／「ｊＥＲ８０６」）、エポキシ当量１６５
（ｆ）シリカ（株式会社アドマテックス製／「ＳＣ１０５０－ＬＣ」）、平均粒径０．２５μｍ
（ｇ）ノボラック型フェノール樹脂（住友ベークライト株式会社製／「ＰＲ－５５６１７」）、水酸基当量１０３
（ｈ）２－フェニル－４－メチルイミダゾール（四国化成工業株式会社製／「２Ｐ４ＭＺ」）
（ｉ）カップリング剤（信越化学工業株式会社製／「ＫＢＥ４０３」）
（ｊ）アジピン酸（関東化学株式会社製） Other (d) Bisphenol F type epoxy resin (Mitsubishi Chemical Corporation / “jER806”), epoxy equivalent 165
(F) Silica (manufactured by Admatechs / “SC1050-LC”), average particle size 0.25 μm
(G) Novolac type phenolic resin (manufactured by Sumitomo Bakelite Co., Ltd./“PR-55617 ”), hydroxyl group equivalent 103
(H) 2-Phenyl-4-methylimidazole (manufactured by Shikoku Kasei Kogyo Co., Ltd./“2P4MZ ”)
(I) Coupling agent (Shin-Etsu Chemical Co., Ltd./"KBE403 ")
(J) Adipic acid (manufactured by Kanto Chemical Co., Inc.)
＜実施例１＞
・樹脂組成物の調製
　（Ａ）成分として「ＥＰＩＣＬＯＮ　ＨＰ－４７７０」６質量部、（Ｂ）成分として「フェノールフタリン」６質量部、（Ｃ）成分として「ＹＸ６９５４」２質量部、のほか、「ｊＥＲ８０６」２４質量部、「ＰＲ－５５６１７」１１．７質量部、「２Ｐ４ＭＺ」０．１質量部、「ＫＢＥ４０３」０．２質量部、メチルエチルケトンに溶解し、さらに、「ＳＣ１０５０－ＬＣ」５０質量部を混合し、固形分比率５０質量％の樹脂組成物ワニスを調製した。
　得られた樹脂組成物ワニスを、ポリエステルフィルム基材（ベースフィルム、帝人デュポンフィルム株式会社製、商品名：ピューレックスＡ５３）に厚さ５０μｍとなるように塗布した後、１００℃で５分間乾燥して溶剤を蒸発除去して、厚さ２５μｍのフィルム状樹脂組成物を得た。 <Example 1>
-Preparation of resin composition In addition to 6 parts by weight of "EPICLON HP-4770" as component (A), 6 parts by weight of "phenolphthaline" as component (B), 2 parts by weight of "YX6954" as component (C), “JER806” 24 parts by mass, “PR-55617” 11.7 parts by mass, “2P4MZ” 0.1 part by mass, “KBE403” 0.2 part by mass, dissolved in methyl ethyl ketone, and “SC1050-LC” 50 parts by mass The resin composition varnish with a solid content ratio of 50 mass% was prepared.
The obtained resin composition varnish was applied to a polyester film substrate (base film, manufactured by Teijin DuPont Films, trade name: Purex A53) to a thickness of 50 μm, and then dried at 100 ° C. for 5 minutes. Then, the solvent was removed by evaporation to obtain a film-shaped resin composition having a thickness of 25 μm.
・電子装置の作製
　上記で得られたフィルム状樹脂組成物と、表面に低融点の導電性金属として錫、銀を含む合金からなる半田付き銅電極を有する半導体ウエハ（サイズ２００ｍｍφ、個別回路のサイズ１０ｍｍ×１０ｍｍ、厚さ１００μｍ、電極の高さ１５μｍ、電極の幅３０μｍ、電極間の距離３０μｍ、）を用意し、半導体ウエハに、真空ラミネーター（名機株式会社製、ＭＶＬＰ）を用いて、１００℃、０．８ＭＰａ、３０秒間でラミネートし、フィルム状樹脂組成物付き半導体ウエハを得た。 -Manufacture of electronic device A semiconductor wafer having a film-like resin composition obtained above and a soldered copper electrode made of an alloy containing tin and silver as a low melting point conductive metal (size: 200 mmφ, size of individual circuit) 10 mm × 10 mm, thickness 100 μm, electrode height 15 μm, electrode width 30 μm, distance between electrodes 30 μm, and 100 mm using a vacuum laminator (MVLP, manufactured by Meiki Co., Ltd.) Lamination was performed at 0 ° C. and 0.8 MPa for 30 seconds to obtain a semiconductor wafer with a film-like resin composition.
　次に、半導体ウエハのフィルム状樹脂組成物を貼り合せた面と逆の面に、ダイシングテープをラミネーターで貼り合せた。このときの貼り合せ条件は２５℃、圧力０．８ＭＰａ、２ｍｍ／ｓで、フィルム状樹脂組成物付き半導体ウエハとダイシングテープを貼り合せた。 Next, a dicing tape was bonded to the surface of the semiconductor wafer opposite to the surface on which the film-shaped resin composition was bonded with a laminator. The bonding conditions at this time were 25 ° C., a pressure of 0.8 MPa, and 2 mm / s, and the semiconductor wafer with the film-like resin composition and the dicing tape were bonded together.
　次いで、ダイシングテープをウエハリングに固定して、ダイシングソー（ＤＦＤ６３６０、（株）ディスコ製）のダイシングテーブルにセットした。さらに、フィルム状樹脂組成物付き半導体ウエハ側からダイシングソーを用いて以下の条件でダイシング（切断）した。これにより、フィルム状樹脂組成物付き半導体ウエハが個片化され、以下のダイシングサイズのフィルム状樹脂組成物付き半導体チップを得た。 Next, the dicing tape was fixed to the wafer ring and set on a dicing table of a dicing saw (DFD6360, manufactured by DISCO Corporation). Furthermore, it diced (cut | disconnected) on the following conditions using the dicing saw from the semiconductor wafer side with a film-form resin composition. Thereby, the semiconductor wafer with a film-shaped resin composition was separated into pieces, and semiconductor chips with a film-shaped resin composition having the following dicing sizes were obtained.
≪ダイシング条件≫
　　ダイシングサイズ　　　　：１０ｍｍ×１０ｍｍ角
　　ダイシング速度　　　　　：５０ｍｍ／ｓｅｃ
　　スピンドル回転数　　　　：４０，０００ｒｐｍ
　　ダイシング最大深さ　　　：０．１３ｍｍ（シリコンウエハの表面からの切り込み量）
　　ダイシングブレードの厚さ：１５μｍ ≪Dicing condition≫
Dicing size: 10 mm x 10 mm square Dicing speed: 50 mm / sec
Spindle speed: 40,000 rpm
Maximum dicing depth: 0.13 mm (cutting amount from the surface of the silicon wafer)
Dicing blade thickness: 15 μm
　これを、フリップチップボンダー（Ｐａｎａｓｏｎｉｃ株式会社製、ＦＣＢ３）を用いて、先端に金とニッケルがコーティングされた銅からなる突起電極を有するシリコン製回路基板（サイズ２００ｍｍφ、厚さ２００μｍ、個別回路のサイズ１２ｍｍ×１２ｍｍ、電極の高さ１５μｍ、電極の幅３０μｍ、電極間の距離３０μｍ）の突起電極と、半田付き銅電極とが当接するようにフィルム状樹脂組成物付き半導体チップの所定のアライメントマークとシリコン製回路基板の所定のアライメントマークをフリップチップボンダーで自動認識させることによって位置合わせを行い、シリコン製回路基板に半導体チップを２３５℃、５秒間加熱して、半田付き銅電極の半田を溶融させて半田接続を行った。 Using a flip chip bonder (manufactured by Panasonic, FCB3), a silicon circuit board (size 200 mmφ, thickness 200 μm, individual circuit size) having a protruding electrode made of copper coated with gold and nickel at the tip. 12 mm × 12 mm, electrode height 15 μm, electrode width 30 μm, distance between electrodes 30 μm) and a predetermined alignment mark of the semiconductor chip with a film-like resin composition so that the soldered copper electrode comes into contact with Alignment is performed by automatically recognizing a predetermined alignment mark on the silicon circuit board with a flip chip bonder, and the semiconductor chip is heated to 235 ° C. for 5 seconds to melt the solder of the soldered copper electrode. Solder connection was made.
　そして、１８０℃、６０分間、０．８ＭＰａの流体圧（空気圧）の雰囲気下で加熱して、フィルム状樹脂組成物を硬化させた。
　次に、シリコン製回路基板の半導体チップを搭載した面と反対側の面に、ダイシングテープをラミネーターで貼り合せた。このとき、貼り合せ条件は２５℃、圧力０．８ＭＰａ、２ｍｍ／ｓであった。 Then, the film-shaped resin composition was cured by heating in an atmosphere of fluid pressure (air pressure) of 0.8 MPa at 180 ° C. for 60 minutes.
Next, a dicing tape was bonded to the surface of the silicon circuit board opposite to the surface on which the semiconductor chip was mounted with a laminator. At this time, the bonding conditions were 25 ° C., pressure 0.8 MPa, and 2 mm / s.
　次いで、ダイシングテープをウエハリングに固定して、ダイシングソー（ＤＦＤ６３６０、（株）ディスコ製）のダイシングテーブルにセットした。さらに、搭載した半導体チップと半導体チップの間をダイシングソーを用いて以下の条件でダイシング（切断）した。これにより、半導体チップを搭載したシリコン製回路基板が個片化され、半導体チップと、シリコン製回路基板とがフィルム状樹脂組成物の硬化物を介して接着された以下のダイシングサイズの電子装置（半導体装置）を得た。 Next, the dicing tape was fixed to the wafer ring and set on a dicing table of a dicing saw (DFD6360, manufactured by DISCO Corporation). Further, dicing (cutting) was performed between the mounted semiconductor chip and the semiconductor chip using a dicing saw under the following conditions. As a result, a silicon circuit board on which a semiconductor chip is mounted is separated into pieces, and the following dicing size electronic device in which the semiconductor chip and the silicon circuit board are bonded via a cured product of a film-like resin composition ( Semiconductor device) was obtained.
≪ダイシング条件≫
　　ダイシングサイズ　　　　：１２ｍｍ×１２ｍｍ角
　　ダイシング速度　　　　　：５０ｍｍ／ｓｅｃ
　　スピンドル回転数　　　　：４０，０００ｒｐｍ
　　ダイシング最大深さ　　　：０．２３ｍｍ（シリコンウエハの表面からの切り込み量）
　　ダイシングブレードの厚さ：１５μｍ ≪Dicing condition≫
Dicing size: 12mm x 12mm square Dicing speed: 50mm / sec
Spindle speed: 40,000 rpm
Dicing maximum depth: 0.23 mm (cut amount from the surface of the silicon wafer)
Dicing blade thickness: 15 μm
＜実施例２＞
　樹脂組成物の調製において、
（Ａ）成分として「ＥＰＩＣＬＯＮ　ＨＰ－４７５０」６質量部、（Ｂ）成分として「フェノールフタリン」６質量部、（Ｃ）成分として「ＹＸ６９５４」２質量部、のほか、「ｊＥＲ８０６」２４質量部、「ＰＲ－５５６１７」１１．７質量部、「２Ｐ４ＭＺ」０．１質量部、「ＫＢＥ４０３」０．２質量部、メチルエチルケトンに溶解し、さらに、「ＳＣ１０５０－ＬＣ」５０質量部を混合し、固形分比率５０質量％の樹脂組成物ワニスを調製した。
　これ以降は実施例１と同様にしてフィルム状樹脂組成物および電子装置を得た。 <Example 2>
In preparing the resin composition,
(E) 6 parts by mass of “EPICLON HP-4750” as component (A), 6 parts by mass of “phenolphthaline” as component (B), 2 parts by mass of “YX6954” as component (C), and 24 parts by mass of “jER806” , 11.7 parts by mass of “PR-55617”, 0.1 part by mass of “2P4MZ”, 0.2 part by mass of “KBE403”, and 50 parts by mass of “SC1050-LC” are mixed and mixed. A resin composition varnish having a fraction of 50% by mass was prepared.
Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
＜実施例３＞
　樹脂組成物の調製において、
（Ａ）成分として「ＥＰＩＣＬＯＮ　ＨＰ－４７００」６質量部、（Ｂ）成分として「フェノールフタリン」６質量部、（Ｃ）成分として「ＹＸ６９５４」２質量部、のほか、「ｊＥＲ８０６」２４質量部、「ＰＲ－５５６１７」１１．７質量部、「２Ｐ４ＭＺ」０．１質量部、「ＫＢＥ４０３」０．２質量部、メチルエチルケトンに溶解し、さらに、「ＳＣ１０５０－ＬＣ」５０質量部を混合し、固形分比率５０質量％の樹脂組成物ワニスを調製した。
　これ以降は実施例１と同様にしてフィルム状樹脂組成物および電子装置を得た。 <Example 3>
In preparing the resin composition,
(E) 6 parts by mass of “EPICLON HP-4700” as component (A), 6 parts by mass of “phenolphthaline” as component (B), 2 parts by mass of “YX6954” as component (C), and 24 parts by mass of “jER806” , 11.7 parts by mass of “PR-55617”, 0.1 part by mass of “2P4MZ”, 0.2 part by mass of “KBE403”, and 50 parts by mass of “SC1050-LC” are mixed and mixed. A resin composition varnish having a fraction of 50% by mass was prepared.
Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
＜実施例４＞
　樹脂組成物の調製において、
（Ａ）成分として「ＥＰＩＣＬＯＮ　ＨＰ－４７００」１質量部、（Ｂ）成分として「フェノールフタリン」６質量部、（Ｃ）成分として「ＹＸ６９５４」２質量部、のほか、「ｊＥＲ８０６」２１．７質量部、「ＰＲ－５５６１７」１９質量部、「２Ｐ４ＭＺ」０．１質量部、「ＫＢＥ４０３」０．２質量部、メチルエチルケトンに溶解し、さらに、「ＳＣ１０５０－ＬＣ」５０質量部を混合し、固形分比率５０質量％の樹脂組成物ワニスを調製した。
　これ以降は実施例１と同様にしてフィルム状樹脂組成物および電子装置を得た。 <Example 4>
In preparing the resin composition,
(E) 1 part by weight of “EPICLON HP-4700” as component (A), 6 parts by weight of “phenolphthaline” as component (B), 2 parts by weight of “YX6954” as component (C), and 21.7 of “jER806” Part by weight, 19 parts by weight of “PR-55617”, 0.1 part by weight of “2P4MZ”, 0.2 part by weight of “KBE403”, and 50 parts by weight of “SC1050-LC” are mixed and dissolved. A resin composition varnish having a fraction of 50% by mass was prepared.
Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
＜実施例５＞
　樹脂組成物の調製において、
（Ａ）成分として「ＥＰＩＣＬＯＮ　ＨＰ－４７００」１質量部、（Ｂ）成分として「フェノールフタリン」２５質量部、（Ｃ）成分として「ＹＸ６９５４」２質量部、のほか、「ｊＥＲ８０６」２１．７質量部、「２Ｐ４ＭＺ」０．１質量部、「ＫＢＥ４０３」０．２質量部、をメチルエチルケトンに溶解し、さらに、「ＳＣ１０５０－ＬＣ」５０質量部を混合し、固形分比率５０質量％の樹脂組成物ワニスを調製した。
　これ以降は実施例１と同様にしてフィルム状樹脂組成物および電子装置を得た。 <Example 5>
In preparing the resin composition,
In addition to 1 part by weight of “EPICLON HP-4700” as component (A), 25 parts by weight of “phenolphthaline” as component (B), 2 parts by weight of “YX6954” as component (C), 21.7 “jER806” Part by mass, 0.1 part by mass of “2P4MZ” and 0.2 part by mass of “KBE403” are dissolved in methyl ethyl ketone, and further 50 parts by mass of “SC1050-LC” are mixed to obtain a resin composition having a solid content ratio of 50% by mass. A product varnish was prepared.
Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
＜実施例６＞
　樹脂組成物の調製において、
（Ａ）成分として「ＥＰＩＣＬＯＮ　ＨＰ－４７００」２０質量部、（Ｂ）成分として「フェノールフタリン」３質量部、（Ｃ）成分として「ＹＸ６９５４」２質量部、のほか、「ｊＥＲ８０６」１３質量部、「ＰＲ－５５６１７」１１．７質量部、「２Ｐ４ＭＺ」０．１質量部、「ＫＢＥ４０３」０．２質量部、メチルエチルケトンに溶解し、さらに、「ＳＣ１０５０－ＬＣ」５０質量部を混合し、固形分比率５０質量％の樹脂組成物ワニスを調製した。
　これ以降は実施例１と同様にしてフィルム状樹脂組成物および電子装置を得た。 <Example 6>
In preparing the resin composition,
(A) 20 parts by weight of “EPICLON HP-4700” as component, 3 parts by weight of “phenolphthaline” as component (B), 2 parts by weight of “YX6954” as component (C), 13 parts by weight of “jER806” , 11.7 parts by mass of “PR-55617”, 0.1 part by mass of “2P4MZ”, 0.2 part by mass of “KBE403”, and 50 parts by mass of “SC1050-LC” are mixed and mixed. A resin composition varnish having a fraction of 50% by mass was prepared.
Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
＜実施例７＞
　樹脂組成物の調製において、
（Ａ）成分として「ＥＰＩＣＬＯＮ　ＨＰ－４７００」１５質量部、（Ｂ）成分として「フェノールフタリン」１５質量部、（Ｃ）成分として「ＹＸ６９５４」２質量部、のほか、「ｊＥＲ８０６」６質量部、「ＰＲ－５５６１７」１１．７質量部、「２Ｐ４ＭＺ」０．１質量部、「ＫＢＥ４０３」０．２質量部、メチルエチルケトンに溶解し、さらに、「ＳＣ１０５０－ＬＣ」５０質量部を混合し、固形分比率５０質量％の樹脂組成物ワニスを調製した。
　これ以降は実施例１と同様にしてフィルム状樹脂組成物および電子装置を得た。 <Example 7>
In preparing the resin composition,
(E) 15 parts by weight of “EPICLON HP-4700” as component (A), 15 parts by weight of “phenolphthaline” as component (B), 2 parts by weight of “YX6954” as component (C), and 6 parts by weight of “jER806” , 11.7 parts by mass of “PR-55617”, 0.1 part by mass of “2P4MZ”, 0.2 part by mass of “KBE403”, and 50 parts by mass of “SC1050-LC” are mixed and mixed. A resin composition varnish having a fraction of 50% by mass was prepared.
Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
＜実施例８＞
　樹脂組成物の調製において、
（Ａ）成分として「ＥＰＩＣＬＯＮ　ＨＰ－４７００」０．５質量部、（Ｂ）成分として「フェノールフタリン」６質量部、（Ｃ）成分として「ＹＸ６９５４」２質量部、のほか、「ｊＥＲ８０６」２９．５質量部、「ＰＲ－５５６１７」１１．７質量部、「２Ｐ４ＭＺ」０．１質量部、「ＫＢＥ４０３」０．２質量部、メチルエチルケトンに溶解し、さらに、「ＳＣ１０５０－ＬＣ」５０質量部を混合し、固形分比率５０質量％の樹脂組成物ワニスを調製した。
　これ以降は実施例１と同様にしてフィルム状樹脂組成物および電子装置を得た。 <Example 8>
In preparing the resin composition,
In addition to 0.5 parts by weight of “EPICLON HP-4700” as component (A), 6 parts by weight of “phenolphthaline” as component (B), 2 parts by weight of “YX6954” as component (C), “jER806” 29 .5 parts by mass, 11.7 parts by mass of “PR-55617”, 0.1 part by mass of “2P4MZ”, 0.2 part by mass of “KBE403”, and 50 parts by mass of “SC1050-LC” were dissolved in methyl ethyl ketone. By mixing, a resin composition varnish with a solid content ratio of 50 mass% was prepared.
Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
＜実施例９＞
　樹脂組成物の調製において、
（Ａ）成分として「ＥＰＩＣＬＯＮ　ＨＰ－４７００」２１質量部、（Ｂ）成分として「フェノールフタリン」６質量部、（Ｃ）成分として「ＹＸ６９５４」２質量部、のほか、「ｊＥＲ８０６」９質量部、「ＰＲ－５５６１７」１１．７質量部、「２Ｐ４ＭＺ」０．１質量部、「ＫＢＥ４０３」０．２質量部、メチルエチルケトンに溶解し、さらに、「ＳＣ１０５０－ＬＣ」５０質量部を混合し、固形分比率５０質量％の樹脂組成物ワニスを調製した。
　これ以降は実施例１と同様にしてフィルム状樹脂組成物および電子装置を得た。 <Example 9>
In preparing the resin composition,
(A) 21 parts by weight of “EPICLON HP-4700” as component, 6 parts by weight of “phenolphthaline” as component (B), 2 parts by weight of “YX6954” as component (C), 9 parts by weight of “jER806” , 11.7 parts by mass of “PR-55617”, 0.1 part by mass of “2P4MZ”, 0.2 part by mass of “KBE403”, and 50 parts by mass of “SC1050-LC” are mixed and mixed. A resin composition varnish having a fraction of 50% by mass was prepared.
Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
＜実施例１０＞
　樹脂組成物の調製において、
（Ａ）成分として「ＥＰＩＣＬＯＮ　ＨＰ－４７００」６質量部、（Ｂ）成分として「フェノールフタリン」２質量部、（Ｃ）成分として「ＹＸ６９５４」２質量部、のほか、「ｊＥＲ８０６」２４質量部、「ＰＲ－５５６１７」１５．７質量部、「２Ｐ４ＭＺ」０．１質量部、「ＫＢＥ４０３」０．２質量部、をメチルエチルケトンに溶解し、さらに、「ＳＣ１０５０－ＬＣ」５０質量部を混合し、固形分比率５０質量％の樹脂組成物ワニスを調製した。
　これ以降は実施例１と同様にしてフィルム状樹脂組成物および電子装置を得た。 <Example 10>
In preparing the resin composition,
(E) 6 parts by weight of “EPICLON HP-4700” as component (A), 2 parts by weight of “phenolphthaline” as component (B), 2 parts by weight of “YX6954” as component (C), and 24 parts by weight of “jER806” , 15.7 parts by mass of “PR-55617”, 0.1 part by mass of “2P4MZ”, 0.2 part by mass of “KBE403” are dissolved in methyl ethyl ketone, and 50 parts by mass of “SC1050-LC” are mixed, A resin composition varnish having a solid content ratio of 50% by mass was prepared.
Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
＜実施例１１＞
　樹脂組成物の調製において、
（Ａ）成分として「ＥＰＩＣＬＯＮ　ＨＰ－４７００」２質量部、（Ｂ）成分として「フェノールフタリン」２６質量部、（Ｃ）成分として「ＹＸ６９５４」２質量部、のほか、「ｊＥＲ８０６」１９．７質量部、「２Ｐ４ＭＺ」０．１質量部、「ＫＢＥ４０３」０．２質量部、をメチルエチルケトンに溶解し、さらに、「ＳＣ１０５０－ＬＣ」５０質量部を混合し、固形分比率５０質量％の樹脂組成物ワニスを調製した。
　これ以降は実施例１と同様にしてフィルム状樹脂組成物および電子装置を得た。 <Example 11>
In preparing the resin composition,
(E) 2 parts by weight of “EPICLON HP-4700” as component (A), 26 parts by weight of “phenolphthaline” as component (B), 2 parts by weight of “YX6954” as component (C), 19.7 of “jER806” Part by mass, 0.1 part by mass of “2P4MZ” and 0.2 part by mass of “KBE403” are dissolved in methyl ethyl ketone, and further 50 parts by mass of “SC1050-LC” are mixed to obtain a resin composition having a solid content ratio of 50% by mass. A product varnish was prepared.
Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
＜実施例１２＞
　樹脂組成物の調製において、
（Ａ）成分として「ＥＰＩＣＬＯＮ　ＨＰ－４７００」６質量部、（Ｂ）成分として「ジフェノール酸」６質量部、（Ｃ）成分として「ＹＸ６９５４」２質量部、のほか、「ｊＥＲ８０６」２４質量部、「ＰＲ－５５６１７」１１．７質量部、「２Ｐ４ＭＺ」０．１質量部、「ＫＢＥ４０３」０．２質量部、をメチルエチルケトンに溶解し、さらに、「ＳＣ１０５０－ＬＣ」５０質量部を混合し、固形分比率５０質量％の樹脂組成物ワニスを調製した。
　これ以降は実施例１と同様にしてフィルム状樹脂組成物および電子装置を得た。 <Example 12>
In preparing the resin composition,
(A) 6 parts by mass of “EPICLON HP-4700” as component, 6 parts by mass of “diphenolic acid” as component (B), 2 parts by mass of “YX6954” as component (C), and 24 parts by mass of “jER806” , 11.7 parts by mass of “PR-55617”, 0.1 part by mass of “2P4MZ” and 0.2 part by mass of “KBE403” are dissolved in methyl ethyl ketone, and 50 parts by mass of “SC1050-LC” are mixed, A resin composition varnish having a solid content ratio of 50% by mass was prepared.
Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
＜実施例１３＞
　樹脂組成物の調製において、
（Ａ）成分として「ＥＰＩＣＬＯＮ　ＨＰ－４７００」６質量部、（Ｂ）成分として「２－ヒドロキシ安息香酸」６質量部、（Ｃ）成分として「ＹＸ６９５４」２質量部、のほか、「ｊＥＲ８０６」２４質量部、「ＰＲ－５５６１７」１１．７質量部、「２Ｐ４ＭＺ」０．１質量部、「ＫＢＥ４０３」０．２質量部、をメチルエチルケトンに溶解し、さらに、「ＳＣ１０５０－ＬＣ」５０質量部を混合し、固形分比率５０質量％の樹脂組成物ワニスを調製した。
　これ以降は実施例１と同様にしてフィルム状樹脂組成物および電子装置を得た。 <Example 13>
In preparing the resin composition,
(E) 6 parts by weight of “EPICLON HP-4700” as component (A), 6 parts by weight of “2-hydroxybenzoic acid” as component (B), 2 parts by weight of “YX6954” as component (C), “jER806” 24 Part by mass, 11.7 parts by mass of “PR-55617”, 0.1 part by mass of “2P4MZ” and 0.2 part by mass of “KBE403” are dissolved in methyl ethyl ketone, and further, 50 parts by mass of “SC1050-LC” are mixed. Then, a resin composition varnish having a solid content ratio of 50% by mass was prepared.
Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
＜実施例１４＞
　樹脂組成物の調製において、
（Ａ）成分として「ＥＰＩＣＬＯＮ　ＨＰ－４７００」６質量部、（Ｂ）成分として「フェノールフタリン」４質量部、（Ｃ）成分として「ＹＸ６９５４」２質量部、のほか、「ｊＥＲ８０６」２４質量部、「ＰＲ－５５６１７」１３．７質量部、「２Ｐ４ＭＺ」０．１質量部、「ＫＢＥ４０３」０．２質量部、をメチルエチルケトンに溶解し、さらに、「ＳＣ１０５０－ＬＣ」５０質量部を混合し、固形分比率５０質量％の樹脂組成物ワニスを調製した。
　これ以降は実施例１と同様にしてフィルム状樹脂組成物および電子装置を得た。 <Example 14>
In preparing the resin composition,
(E) 6 parts by mass of “EPICLON HP-4700” as component (A), 4 parts by mass of “phenol phthaline” as component (B), 2 parts by mass of “YX6954” as component (C), and 24 parts by mass of “jER806” , 13.7 parts by mass of “PR-55617”, 0.1 part by mass of “2P4MZ”, 0.2 part by mass of “KBE403” are dissolved in methyl ethyl ketone, and further 50 parts by mass of “SC1050-LC” are mixed, A resin composition varnish having a solid content ratio of 50% by mass was prepared.
Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
＜実施例１５＞
　樹脂組成物の調製において、
（Ａ）成分として「ＥＰＩＣＬＯＮ　ＨＰ－４７００」６質量部、（Ｂ）成分として「フェノールフタリン」５質量部、（Ｃ）成分として「ＹＸ６９５４」２質量部、のほか、「ｊＥＲ８０６」２４質量部、「ＰＲ－５５６１７」１２．７質量部、「２Ｐ４ＭＺ」０．１質量部、「ＫＢＥ４０３」０．２質量部、をメチルエチルケトンに溶解し、さらに、「ＳＣ１０５０－ＬＣ」５０質量部を混合し、固形分比率５０質量％の樹脂組成物ワニスを調製した。
　これ以降は実施例１と同様にしてフィルム状樹脂組成物および電子装置を得た。 <Example 15>
In preparing the resin composition,
(A) 6 parts by mass of “EPICLON HP-4700” as component, 5 parts by mass of “phenolphthaline” as component (B), 2 parts by mass of “YX6954” as component (C), and 24 parts by mass of “jER806” , 12.7 parts by mass of “PR-55617”, 0.1 part by mass of “2P4MZ”, 0.2 part by mass of “KBE403” are dissolved in methyl ethyl ketone, and further, 50 parts by mass of “SC1050-LC” are mixed, A resin composition varnish having a solid content ratio of 50% by mass was prepared.
Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
＜実施例１６＞
　樹脂組成物の調製において、
（Ａ）成分として「ＥＰＩＣＬＯＮ　ＨＰ－４７００」１質量部、（Ｂ）成分として「フェノールフタリン」１７質量部、（Ｃ）成分として「ＹＸ６９５４」２質量部、のほか、「ｊＥＲ８０６」２４質量部、「ＰＲ－５５６１７」５．７質量部、「２Ｐ４ＭＺ」０．１質量部、「ＫＢＥ４０３」０．２質量部、をメチルエチルケトンに溶解し、さらに、「ＳＣ１０５０－ＬＣ」５０質量部を混合し、固形分比率５０質量％の樹脂組成物ワニスを調製した。
　これ以降は実施例１と同様にしてフィルム状樹脂組成物および電子装置を得た。 <Example 16>
In preparing the resin composition,
(A) 1 part by weight of “EPICLON HP-4700” as component, 17 parts by weight of “phenolphthaline” as component (B), 2 parts by weight of “YX6954” as component (C), and 24 parts by weight of “jER806” , 5.7 parts by weight of “PR-55617”, 0.1 part by weight of “2P4MZ” and 0.2 part by weight of “KBE403” are dissolved in methyl ethyl ketone, and further, 50 parts by weight of “SC1050-LC” are mixed, A resin composition varnish having a solid content ratio of 50% by mass was prepared.
Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
＜実施例１７＞
　樹脂組成物の調製において、
（Ａ）成分として「ＥＰＩＣＬＯＮ　ＨＰ－４７００」１質量部、（Ｂ）成分として「フェノールフタリン」１３．５質量部、（Ｃ）成分として「ＹＸ６９５４」２質量部、のほか、「ｊＥＲ８０６」２４質量部、「ＰＲ－５５６１７」９．２質量部、「２Ｐ４ＭＺ」０．１質量部、「ＫＢＥ４０３」０．２質量部、をメチルエチルケトンに溶解し、さらに、「ＳＣ１０５０－ＬＣ」５０質量部を混合し、固形分比率５０質量％の樹脂組成物ワニスを調製した。
　これ以降は実施例１と同様にしてフィルム状樹脂組成物および電子装置を得た。 <Example 17>
In preparing the resin composition,
In addition to 1 part by weight of “EPICLON HP-4700” as component (A), 13.5 parts by weight of “phenolphthaline” as component (B), 2 parts by weight of “YX6954” as component (C), “jER806” 24 Part by mass, 9.2 parts by mass of “PR-55617”, 0.1 part by mass of “2P4MZ” and 0.2 parts by mass of “KBE403” are dissolved in methyl ethyl ketone, and further, 50 parts by mass of “SC1050-LC” are mixed. Then, a resin composition varnish having a solid content ratio of 50% by mass was prepared.
Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
＜実施例１８＞
　樹脂組成物の調製において、
（Ａ）成分として「ＥＰＩＣＬＯＮ　ＨＰ－４７００」１質量部、（Ｂ）成分として「フェノールフタリン」１１．５質量部、（Ｃ）成分として「ＹＸ６９５４」２質量部、のほか、「ｊＥＲ８０６」２４質量部、「ＰＲ－５５６１７」１１．２質量部、「２Ｐ４ＭＺ」０．１質量部、「ＫＢＥ４０３」０．２質量部、をメチルエチルケトンに溶解し、さらに、「ＳＣ１０５０－ＬＣ」５０質量部を混合し、固形分比率５０質量％の樹脂組成物ワニスを調製した。
　これ以降は実施例１と同様にしてフィルム状樹脂組成物および電子装置を得た。 <Example 18>
In preparing the resin composition,
In addition to 1 part by weight of “EPICLON HP-4700” as component (A), 11.5 parts by weight of “phenolphthaline” as component (B), 2 parts by weight of “YX6954” as component (C), “jER806” 24 Part by mass, 11.2 parts by mass of “PR-55617”, 0.1 part by mass of “2P4MZ” and 0.2 part by mass of “KBE403” are dissolved in methyl ethyl ketone, and further, 50 parts by mass of “SC1050-LC” are mixed. Then, a resin composition varnish having a solid content ratio of 50% by mass was prepared.
Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
＜実施例１９＞
　樹脂組成物の調製において、
（Ａ）成分として「ＥＰＩＣＬＯＮ　ＨＰ－４７００」１質量部、（Ｂ）成分として「フェノールフタリン」９質量部、（Ｃ）成分として「ＹＸ６９５４」２質量部、のほか、「ｊＥＲ８０６」２４質量部、「ＰＲ－５５６１７」１３．７質量部、「２Ｐ４ＭＺ」０．１質量部、「ＫＢＥ４０３」０．２質量部、をメチルエチルケトンに溶解し、さらに、「ＳＣ１０５０－ＬＣ」５０質量部を混合し、固形分比率５０質量％の樹脂組成物ワニスを調製した。
　これ以降は実施例１と同様にしてフィルム状樹脂組成物および電子装置を得た。 <Example 19>
In preparing the resin composition,
(A) 1 part by weight of “EPICLON HP-4700” as component, 9 parts by weight of “phenolphthaline” as component (B), 2 parts by weight of “YX6954” as component (C), and 24 parts by weight of “jER806” , 13.7 parts by mass of “PR-55617”, 0.1 part by mass of “2P4MZ”, 0.2 part by mass of “KBE403” are dissolved in methyl ethyl ketone, and further 50 parts by mass of “SC1050-LC” are mixed, A resin composition varnish having a solid content ratio of 50% by mass was prepared.
Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
＜実施例２０＞
　樹脂組成物の調製において、
（Ａ）成分として「ＥＰＩＣＬＯＮ　ＨＰ－４７００」３質量部、（Ｂ）成分として「フェノールフタリン」１２質量部、（Ｃ）成分として「ＹＸ６９５４」２質量部、のほか、「ｊＥＲ８０６」２４質量部、「ＰＲ－５５６１７」８．７質量部、「２Ｐ４ＭＺ」０．１質量部、「ＫＢＥ４０３」０．２質量部、をメチルエチルケトンに溶解し、さらに、「ＳＣ１０５０－ＬＣ」５０質量部を混合し、固形分比率５０質量％の樹脂組成物ワニスを調製した。
　これ以降は実施例１と同様にしてフィルム状樹脂組成物および電子装置を得た。 <Example 20>
In preparing the resin composition,
(A) 3 parts by weight of “EPICLON HP-4700” as component, 12 parts by weight of “phenolphthaline” as component (B), 2 parts by weight of “YX6954” as component (C), and 24 parts by weight of “jER806” , 8.7 parts by mass of “PR-55617”, 0.1 part by mass of “2P4MZ”, 0.2 part by mass of “KBE403” are dissolved in methyl ethyl ketone, and 50 parts by mass of “SC1050-LC” are mixed, A resin composition varnish having a solid content ratio of 50% by mass was prepared.
Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
＜実施例２１＞
　樹脂組成物の調製において、
（Ａ）成分として「ＥＰＩＣＬＯＮ　ＨＰ－４７００」６質量部、（Ｂ）成分として「フェノールフタリン」１２質量部、（Ｃ）成分として「ＹＸ６９５４」２質量部、のほか、「ｊＥＲ８０６」２４質量部、「ＰＲ－５５６１７」５．７質量部、「２Ｐ４ＭＺ」０．１質量部、「ＫＢＥ４０３」０．２質量部、をメチルエチルケトンに溶解し、さらに、「ＳＣ１０５０－ＬＣ」５０質量部を混合し、固形分比率５０質量％の樹脂組成物ワニスを調製した。
　これ以降は実施例１と同様にしてフィルム状樹脂組成物および電子装置を得た。 <Example 21>
In preparing the resin composition,
(E) 6 parts by mass of “EPICLON HP-4700” as component (A), 12 parts by mass of “phenolphthaline” as component (B), 2 parts by mass of “YX6954” as component (C), and 24 parts by mass of “jER806” , 5.7 parts by weight of “PR-55617”, 0.1 part by weight of “2P4MZ” and 0.2 part by weight of “KBE403” are dissolved in methyl ethyl ketone, and further, 50 parts by weight of “SC1050-LC” are mixed, A resin composition varnish having a solid content ratio of 50% by mass was prepared.
Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
＜比較例１＞
　樹脂組成物の調製において、
（Ａ）成分として「ＥＰＩＣＬＯＮ　ＨＰ－４７７０」１５質量部、（Ｂ）成分を用いず、（Ｃ）成分として「ＹＸ６９５４」２質量部、のほか、「ｊＥＲ８０６」６質量部、「ＰＲ－５５６１７」１１．７質量部、「アジピン酸」１５質量部、「２Ｐ４ＭＺ」０．１質量部、「ＫＢＥ４０３」０．２質量部、をメチルエチルケトンに溶解し、さらに、「ＳＣ１０５０－ＬＣ」５０質量部を混合し、固形分比率５０質量％の樹脂組成物ワニスを調製した。
　これ以降は実施例１と同様にしてフィルム状樹脂組成物および電子装置を得た。 <Comparative Example 1>
In preparing the resin composition,
(E) 15 parts by mass of “EPICLON HP-4770” as component (A), 2 parts by mass of “YX6954” as component (C) without using component (B), 6 parts by mass of “jER806”, “PR-55617” 11.7 parts by mass, 15 parts by mass of “Adipic acid”, 0.1 part by mass of “2P4MZ”, 0.2 part by mass of “KBE403” are dissolved in methyl ethyl ketone, and further 50 parts by mass of “SC1050-LC” are mixed. Then, a resin composition varnish having a solid content ratio of 50% by mass was prepared.
Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
＜比較例２＞
　樹脂組成物の調製において、
（Ａ）成分として「ＥＰＩＣＬＯＮ　ＨＰ－４７７０」１５質量部、（Ｂ）成分を用いず、（Ｃ）成分として「ＹＸ６９５４」２質量部、のほか、「ｊＥＲ８０６」６質量部、「ＰＲ－５５６１７」２６．７質量部、「２Ｐ４ＭＺ」０．１質量部、「ＫＢＥ４０３」０．２質量部、をメチルエチルケトンに溶解し、さらに、「ＳＣ１０５０－ＬＣ」５０質量部を混合し、固形分比率５０質量％の樹脂組成物ワニスを調製した。
　これ以降は実施例１と同様にしてフィルム状樹脂組成物および電子装置を得た。 <Comparative Example 2>
In preparing the resin composition,
(E) 15 parts by mass of “EPICLON HP-4770” as component (A), 2 parts by mass of “YX6954” as component (C) without using component (B), 6 parts by mass of “jER806”, “PR-55617” 26.7 parts by mass, 0.1 part by mass of “2P4MZ”, 0.2 part by mass of “KBE403” are dissolved in methyl ethyl ketone, and further 50 parts by mass of “SC1050-LC” are mixed, and the solid content ratio is 50% by mass. A resin composition varnish was prepared.
Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
＜比較例３＞
　樹脂組成物の調製において、
（Ａ）成分を用いず、（Ｂ）成分として「フェノールフタリン」１７．７質量部、（Ｃ）成分として「ＹＸ６９５４」２質量部、のほか、「ｊＥＲ８０６」３０質量部、「２Ｐ４ＭＺ」０．１質量部、「ＫＢＥ４０３」０．２質量部、をメチルエチルケトンに溶解し、さらに、「ＳＣ１０５０－ＬＣ」５０質量部を混合し、固形分比率５０質量％の樹脂組成物ワニスを調製した。
　これ以降は実施例１と同様にしてフィルム状樹脂組成物および電子装置を得た。 <Comparative Example 3>
In preparing the resin composition,
(A) Component is not used, 17.7 parts by weight of “phenolphthaline” as component (B), 2 parts by weight of “YX6954” as component (C), 30 parts by weight of “jER806”, “2P4MZ” 0 0.1 part by mass and 0.2 part by mass of “KBE403” were dissolved in methyl ethyl ketone, and further, 50 parts by mass of “SC1050-LC” were mixed to prepare a resin composition varnish having a solid content ratio of 50% by mass.
Thereafter, a film-like resin composition and an electronic device were obtained in the same manner as in Example 1.
・特性評価
＜接続性評価＞
　上記各実施例および比較例で得られた電子装置１０個それぞれについて、半導体チップとシリコン製回路基板の接続抵抗値をデジタルマルチメーターで測定し、接続抵抗値を基に評価結果を下記の基準で判定した。
［◎］：１０個全ての電子装置の接続抵抗値が１０Ω以下であったもの。
［○］：１０個全ての電子装置の接続抵抗値が１０Ωより高く、３０Ω以下であったもの。
［×］：１個以上の電子装置の接続抵抗値が３０Ωより高かったもの。 ・ Characteristics evaluation <Connectivity evaluation>
For each of the 10 electronic devices obtained in the above examples and comparative examples, the connection resistance value between the semiconductor chip and the silicon circuit board is measured with a digital multimeter, and the evaluation result based on the connection resistance value is based on the following criteria. Judged.
[◎]: The connection resistance value of all 10 electronic devices was 10Ω or less.
[◯]: Connection resistance values of all 10 electronic devices were higher than 10Ω and 30Ω or lower.
[×]: One or more electronic devices having a connection resistance value higher than 30Ω.
＜絶縁信頼性評価＞
　上記各実施例および比較例で得られた電子装置１０個それぞれについて、１３０℃、８５％ＲＨの環境下で３Ｖの電圧を印加しながら２００時間処理し、隣接バンプ間の絶縁抵抗値を連続測定することによって評価した。
　評価結果を下記の基準で判定した。
［◎］：２００時間の処理で、１０個すべての電子装置の絶縁抵抗値が常に１．０×１０７Ω以上であったもの。
［○］：２００時間の処理で、１個以上の電子装置の絶縁抵抗値が１．０×１０４Ω以上、１．０×１０７Ω未満であったもの。
［×］：２００時間の処理で、１個以上の電子装置の絶縁抵抗値が１．０×１０４Ωを下回ったもの。 <Insulation reliability evaluation>
Each of the 10 electronic devices obtained in each of the above examples and comparative examples was processed for 200 hours while applying a voltage of 3 V in an environment of 130 ° C. and 85% RH, and the insulation resistance value between adjacent bumps was continuously measured. Was evaluated by
The evaluation results were determined according to the following criteria.
[◎]: The insulation resistance values of all 10 electronic devices were always 1.0 × 10 7 Ω or more after 200 hours of treatment.
[O]: The insulation resistance value of one or more electronic devices was 1.0 × 10 4 Ω or more and less than 1.0 × 10 7 Ω after 200 hours of treatment.
[×]: The insulation resistance value of one or more electronic devices was less than 1.0 × 10 4 Ω after 200 hours of treatment.
＜ダイシング性評価＞
　上記電子装置の作製によって得られた各実施例および比較例のフィルム状樹脂組成物付き半導体チップをフリップチップボンダー（Ｐａｎａｓｏｎｉｃ株式会社製、ＦＣＢ３）を用いて、半導体チップのコーナーにあるアライメントマークを自動認識可能であるか否かを評価した。詳細について述べると、同一の条件でダイシングを行った際に、ダイシング性の良好なフィルム状樹脂組成物であればエッジ部がダレることがないため、フィルム状樹脂組成物に生じる傾斜や歪みによって光が乱反射することなく半導体チップのコーナーにあるアライメントマークを自動認識することができる。 <Dicing evaluation>
Using the flip chip bonder (manufactured by Panasonic, FCB3), the alignment marks at the corners of the semiconductor chip are automatically used for the semiconductor chips with the film-like resin compositions of the respective examples and comparative examples obtained by manufacturing the electronic device. It was evaluated whether it was recognizable. To describe in detail, when dicing under the same conditions, if the film-like resin composition has good dicing properties, the edge portion will not sag. It is possible to automatically recognize the alignment mark at the corner of the semiconductor chip without irregular reflection of light.
　一方、ダイシング性が悪いフィルム状樹脂組成物の場合、ダイシング時のブレードの圧力やブレードとの摩擦熱によってフィルム状樹脂組成物のエッジ部がダレてしまう。このためフィルム状樹脂組成物に生じる傾斜や歪みによって光が乱反射するため、半導体チップのコーナーにあるアライメントマークを自動認識することができなくなる。このことを利用して、フィルム状樹脂組成物付き半導体チップ１０個のアライメントマークを自動認識可能であるか否か評価することによって、ダイシング性評価を行った。評価結果は下記の基準で判定した。
[○]：フィルム状樹脂組成物付き半導体チップ１０個のうち、１０個全てが自動認識可能であった。
[△]：フィルム状樹脂組成物付き半導体チップ１０個のうち、６個以上9個以下が自動認識可能であった。
[×]：フィルム状樹脂組成物付き半導体チップ１０個のうち、５個以下が自動認識可能であった。 On the other hand, in the case of a film-shaped resin composition having poor dicing properties, the edge portion of the film-shaped resin composition is sag due to the pressure of the blade during dicing or the frictional heat with the blade. For this reason, since light is irregularly reflected by the inclination and distortion generated in the film-like resin composition, it becomes impossible to automatically recognize the alignment mark at the corner of the semiconductor chip. Utilizing this fact, dicing property evaluation was performed by evaluating whether or not the alignment marks of 10 semiconductor chips with a film-like resin composition can be automatically recognized. The evaluation results were determined according to the following criteria.
[◯]: Of the 10 semiconductor chips with a film-like resin composition, all 10 were automatically recognized.
[Δ]: Among 10 semiconductor chips with a film-like resin composition, 6 or more and 9 or less could be automatically recognized.
[X]: Of the 10 semiconductor chips with a film-like resin composition, 5 or less could be automatically recognized.
　＜フィルム性評価＞
　上記樹脂組成物の調製によって得られた各実施例および比較例のフィルム状樹脂組成物を用いて、２５℃の雰囲気下で直径４ｍｍφの円柱に巻きつけ、フィルム状樹脂組成物の割れ、欠けを評価した。評価結果を下記の基準で判定した。
[○]：フィルム状樹脂組成物に割れ、欠けが全く発生しない。
[×]：フィルム状樹脂組成物の一部に割れ、欠けが発生した。 <Film evaluation>
Using the film-like resin compositions of Examples and Comparative Examples obtained by the preparation of the resin composition, the film-like resin composition was cracked and chipped by being wound around a cylinder with a diameter of 4 mmφ under an atmosphere of 25 ° C. evaluated. The evaluation results were determined according to the following criteria.
[◯]: No cracking or chipping occurs in the film-like resin composition.
[×]: A part of the film-shaped resin composition was cracked or chipped.
＜吸湿密着性評価＞
　上記樹脂組成物の調製によって得られた各実施例および比較例のフィルム状樹脂組成物を、ＳｉＮ膜が形成されたウエハに真空ラミネーター（名機株式会社製、ＭＶＬＰ）を用いて１００℃、０．８ＭＰａ、３０秒間でラミネートし、ダイシングにて２ｍｍ角のフィルム状樹脂組成物付きチップを作製した。また、ＳｉＮ膜が形成された別個のウエハをダイシングにて６ｍｍ角のチップを作製し、このチップのＳｉＮ膜が形成された面に前述の２ｍｍ角のフィルム状樹脂組成物付きチップをフィルム状樹脂組成物が接するように１２０℃で接着し、その後１８０℃、６０分間加熱しフィルム状樹脂組成物を硬化することによって評価用サンプルを５個ずつ作製した。これらを、６０℃、６０％、１２０時間処理した後に、２６０℃の雰囲気下でダイシェア強度を１水準当たり５個測定し、その平均値を得た。評価結果を下記の基準で判定した。
[○]：評価用サンプル５個のダイシェア強度の平均値が５ＭＰａ以上であった。
[△]：評価用サンプル５個のダイシェア強度の平均値が２ＭＰａ以上、５ＭＰａ未満であった。
[×]：評価用サンプル５個のダイシェア強度の平均値が２ＭＰａ未満であった。 <Hygroscopic adhesion evaluation>
The film-like resin compositions of the Examples and Comparative Examples obtained by the preparation of the resin compositions described above were prepared at 100 ° C., 0 ° C. using a vacuum laminator (MVLP, manufactured by Meiki Co., Ltd.) on the wafer on which the SiN film was formed. The laminate was laminated at 8 MPa for 30 seconds, and a 2 mm square chip with a film-shaped resin composition was produced by dicing. Further, a 6 mm square chip is manufactured by dicing a separate wafer on which the SiN film is formed, and the chip with the 2 mm square film-shaped resin composition is placed on the surface of the chip on which the SiN film is formed. Five samples for evaluation were prepared by bonding at 120 ° C. so that the composition was in contact, and then heating the film-shaped resin composition by heating at 180 ° C. for 60 minutes. After these were treated at 60 ° C., 60% for 120 hours, five die shear strengths were measured per level under an atmosphere of 260 ° C., and the average value was obtained. The evaluation results were determined according to the following criteria.
[◯]: The average value of the die shear strength of five samples for evaluation was 5 MPa or more.
[Δ]: The average value of die shear strength of five samples for evaluation was 2 MPa or more and less than 5 MPa.
[×]: The average value of die shear strength of five samples for evaluation was less than 2 MPa.
＜温度サイクル試験後のクラック評価＞
　上記電子装置の作製によって得られた各実施例および比較例の電子装置（半導体装置）を－５５℃／３０分⇔１２５℃／３０分、５００サイクルの温度サイクル処理を行った後、断面研磨により半田接続部が現れる面が観察できるように加工し、フィルム状樹脂組成物部のクラック発生の有無を観察した。評価結果を下記の基準で判定した。
[○]：フィルム状樹脂組成物部にクラックが発生しない。
[×]：フィルム状樹脂組成物部の一部にクラックが発生した。 <Crack evaluation after temperature cycle test>
Each electronic device (semiconductor device) of each example and comparative example obtained by manufacturing the electronic device was subjected to a temperature cycle treatment of −55 ° C./30 minutes to 125 ° C./30 minutes for 500 cycles, and then subjected to cross-sectional polishing. It processed so that the surface where a solder connection part appeared could be observed, and the presence or absence of the crack generation | occurrence | production of a film-form resin composition part was observed. The evaluation results were determined according to the following criteria.
[◯]: Cracks do not occur in the film-shaped resin composition part.
[X]: A crack occurred in a part of the film-shaped resin composition part.
　上記実施例および比較例における樹脂組成物の配合ならびに電子装置の評価結果を表１～表３に示す。 Tables 1 to 3 show the composition of the resin compositions and the evaluation results of the electronic devices in the above Examples and Comparative Examples.
Figure JPOXMLDOC01-appb-T000009
Figure JPOXMLDOC01-appb-T000009
Figure JPOXMLDOC01-appb-T000010
  
Figure JPOXMLDOC01-appb-T000010
  
Figure JPOXMLDOC01-appb-T000011
Figure JPOXMLDOC01-appb-T000011
　表１～３の結果より、実施例１～２１はいずれも、（Ａ）成分、（Ｂ）成分、及び（Ｃ）成分を含有する樹脂組成物であり、これを用いた電子装置はいずれも接続性、絶縁信頼性に優れたものであった。
　特に、実施例２～４、７、１２、１４、１５、１７～２１は、（Ａ）成分が、３官能エポキシ樹脂及び／又は４官能エポキシ樹脂であり、（Ｂ）成分が、１分子中に２つ以上のフェノール性水酸基と、１つ以上のカルボキシル基とを備える化合物であるとともに、樹脂組成物中における（Ａ）成分の含有量、（Ｂ）成分の含有量、ならびに、（Ａ）成分と（Ｂ）成分との含有質量比率［（Ｂ）／（Ａ）］が好適な範囲であったため、特に上記特性に優れたものとなった。 From the results of Tables 1 to 3, each of Examples 1 to 21 is a resin composition containing the component (A), the component (B), and the component (C), and any electronic device using this is a resin composition. Excellent connectivity and insulation reliability.
In particular, in Examples 2 to 4, 7, 12, 14, 15, 17 to 21, the component (A) is a trifunctional epoxy resin and / or a tetrafunctional epoxy resin, and the component (B) is in one molecule. In addition to the compound having two or more phenolic hydroxyl groups and one or more carboxyl groups, the content of the component (A), the content of the component (B) in the resin composition, and (A) Since the mass ratio [(B) / (A)] of the component and the component (B) was within a suitable range, the above characteristics were particularly excellent.
　一方、比較例１は、（Ｂ）成分を用いずアジピン酸を用いたものであるが、フラックス機能は付与できたものの、エポキシ樹脂との反応に関与しないアジピン酸が樹脂組成物内に存在するため、絶縁信頼性が大きく低下した。比較例２は、（Ｂ）成分を用いなかったものであるが、フラックス機能を発現させることができず、接続性が大きく低下した。そして、比較例３は（Ａ）成分を用いなかったものであるが、耐熱性が不足しているため、絶縁信頼性が大きく低下した。 On the other hand, although the comparative example 1 uses adipic acid without using the component (B), adipic acid that does not participate in the reaction with the epoxy resin is present in the resin composition although the flux function can be provided. Therefore, the insulation reliability has been greatly reduced. In Comparative Example 2, the component (B) was not used, but the flux function could not be expressed and the connectivity was greatly reduced. And although the comparative example 3 was a thing which did not use the (A) component, since the heat resistance was insufficient, the insulation reliability fell significantly.
（実施例２２）
＜接着シートの製造＞
　実施例１の固形分比率５０質量％の樹脂組成物ワニスを用いて、基材ポリエステルフィルム（ベースフィルム、帝人デュポンフィルム社製、商品名「ピューレックスＡ５３」、後のダイシングテープ一体型接着シートのカバーフィルムに相当する。）に厚さ５０μｍとなるように塗布して、１００℃で５分間乾燥して、厚さ２５μｍのフィルム状樹脂組成物が形成された接着シートを得た。 (Example 22)
<Manufacture of adhesive sheet>
Using the resin composition varnish having a solid content ratio of 50% by mass in Example 1, a base polyester film (base film, manufactured by Teijin DuPont Films, trade name “Purex A53”, a dicing tape integrated adhesive sheet later) It corresponds to a cover film.) And was dried at 100 ° C. for 5 minutes to obtain an adhesive sheet on which a film-shaped resin composition having a thickness of 25 μm was formed.
＜ダイシングテープ一体型接着シート＞
（１）ダイシングテープの介在層の形成
　アクリル酸２－エチルヘキシル３０質量％と酢酸ビニル７０質量％とを共重合して得られた重量平均分子量約３００，０００の共重合体１００質量部と、分子量が約７００の５官能アクリレートモノマー４５質量部と、２，２－ジメトキシ－２－フェニルアセトフェノン５質量部と、トリレンジイソシアネート（日本ポリウレタン工業社製、商品名「コロネートＴ－１００」）３質量部との混合物を、予め離型処理した厚さ３８μｍのポリエステルフィルム表面に、乾燥後の厚さが１０μｍになるように塗布し、その後、８０℃で５分間乾燥した。そして、得られた塗布膜に対して紫外線５００ｍＪ／ｃｍ２を照射し、ポリエステルフィルム上に介在層を成膜した。 <Dicing tape integrated adhesive sheet>
(1) Formation of Intervening Layer of Dicing Tape 100 parts by mass of a copolymer having a weight average molecular weight of about 300,000 obtained by copolymerizing 30% by mass of 2-ethylhexyl acrylate and 70% by mass of vinyl acetate, and a molecular weight Is about 700 parts of a pentafunctional acrylate monomer, 5 parts by weight of 2,2-dimethoxy-2-phenylacetophenone, and 3 parts by weight of tolylene diisocyanate (trade name “Coronate T-100” manufactured by Nippon Polyurethane Industry Co., Ltd.) Was applied to a surface of a polyester film having a thickness of 38 μm that had been subjected to a release treatment in advance so that the thickness after drying was 10 μm, and then dried at 80 ° C. for 5 minutes. And the ultraviolet-ray 500mJ / cm < 2 > was irradiated with respect to the obtained coating film, and the intervening layer was formed into a film on the polyester film.
（２）ダイシングテープの粘着剤層の形成
　アクリル酸ブチル７０質量％とアクリル酸２－エチルヘキシル３０質量％とを共重合して得られた重量平均分子量約５００，０００の共重合体１００質量部と、トリレンジイソシアネート（日本ポリウレタン工業社製、商品名「コロネートＴ－１００」）３質量部とを混合したダイシングテープの粘着剤層用ワニスを調製した。上記ダイシングテープの粘着層用ワニスを予め離型処理した厚さ３８μｍのポリエステルフィルム表面に、乾燥後の厚さが１０μｍになるように塗布し、その後、８０℃で５分間乾燥した。そして、ポリエステルフィルム上にダイシングテープの粘着層を成膜した。その後、ダイシングテープの基材層として厚さ１００μｍのポリエチレンシートを上記ポリエステルフィルムと反対側面の粘着剤層側にラミネート（積層）して、ダイシングテープを得た。 (2) Formation of pressure-sensitive adhesive layer of dicing tape 100 parts by mass of a copolymer having a weight average molecular weight of about 500,000 obtained by copolymerizing 70% by mass of butyl acrylate and 30% by mass of 2-ethylhexyl acrylate Then, a varnish for an adhesive layer of a dicing tape was prepared by mixing 3 parts by mass of tolylene diisocyanate (trade name “Coronate T-100” manufactured by Nippon Polyurethane Industry Co., Ltd.). The adhesive layer varnish of the dicing tape was applied to a surface of a 38 μm thick polyester film that had been subjected to a release treatment in advance so that the thickness after drying was 10 μm, and then dried at 80 ° C. for 5 minutes. And the adhesion layer of the dicing tape was formed into a film on the polyester film. Thereafter, a polyethylene sheet having a thickness of 100 μm was laminated (laminated) on the side of the pressure-sensitive adhesive layer opposite to the polyester film as a base layer of the dicing tape to obtain a dicing tape.
（３）ダイシングテープ一体型接着シートの製造
　介在層を成膜したフィルムと、上記で得られた接着シートとを、介在層とフィルム状樹脂組成物とが接するようにラミネートし、第１積層体を得た。
　次に、ロール状の金型を用いて、上記第１積層体を半導体ウエハの外径よりも大きく、かつウエハリングの内径よりも小さく打ち抜き、その後、不要部分を除去して、第２積層体を得た。
　さらに、ダイシングテープの粘着層の一方の面側にあるポリエステルフィルムと、上記第２積層体の介在層側にあるポリエステルフィルムとを剥離した。そして、上記第２積層体の介在層とダイシングテープの粘着剤層とが接するように、これらをラミネートした。これにより、ダイシングテープの基材層、ダイシングテープの粘着剤層、介在層、フィルム状樹脂組成物、カバーフィルムがこの順でラミネートされたダイシングテープ一体型接着シートを得た。 (3) Production of Dicing Tape-Integrated Adhesive Sheet The film having the intervening layer formed thereon and the adhesive sheet obtained above are laminated so that the intervening layer and the film-like resin composition are in contact with each other, and the first laminate Got.
Next, using a roll-shaped mold, the first laminated body is punched larger than the outer diameter of the semiconductor wafer and smaller than the inner diameter of the wafer ring, and then unnecessary portions are removed, and the second laminated body is removed. Got.
Further, the polyester film on one side of the adhesive layer of the dicing tape and the polyester film on the intervening layer side of the second laminate were peeled off. Then, these were laminated so that the intervening layer of the second laminate was in contact with the adhesive layer of the dicing tape. Thereby, the base material layer of the dicing tape, the adhesive layer of the dicing tape, the intervening layer, the film-like resin composition, and the cover film were laminated in this order to obtain a dicing tape integrated adhesive sheet.
＜電子装置の製造＞
　本発明の電子装置として、上記で得られた本発明のダイシングテープ一体型接着シートを用いて、下記の手順で電子装置を作製した。
　表面に低融点の導電性金属として錫、銀を含む合金からなる半田付き銅電極を有する半導体ウエハ（サイズ２００ｍｍφ、個別回路のサイズ１０ｍｍ×１０ｍｍ、厚さ１００μｍ、電極の高さ１５μｍ、電極の幅３０μｍ、電極間の距離３０μｍ）を用意した。
ダイシングテープ一体型接着シートからカバーフィルムを剥離し、その剥離面と、半導体ウエハの半田付き銅電極を有する面とが接するように、ダイシングテープ一体型接着シートと半導体ウエハとを積層した。これをラミネーターで、貼り合わせ温度８０℃、ダイシングテープ一体型接着シートにかける圧力０．８ＭＰａ、３０秒間の条件でラミネートして、ダイシングテープ一体型接着シート付きの半導体ウエハを得た。
　次いで、このダイシングテープ一体型接着シート付きの半導体ウエハを、半導体ウエハ側から、ダイシングソー（ディスコ社製、ＤＦＤ６３６０）を用いて下記の条件でダイシング（切断）した。これにより、半導体ウエハが個片化され、下記のダイシングサイズの半導体チップを得た。なお、このダイシングにより形成された切り込みは、その先端が介在層内に達していた。 <Manufacture of electronic devices>
As the electronic device of the present invention, using the dicing tape-integrated adhesive sheet of the present invention obtained above, an electronic device was produced by the following procedure.
Semiconductor wafer having a soldered copper electrode made of an alloy containing tin and silver as a low melting point conductive metal on the surface (size 200 mmφ, individual circuit size 10 mm × 10 mm, thickness 100 μm, electrode height 15 μm, electrode width 30 μm, and the distance between the electrodes was 30 μm).
The cover film was peeled from the dicing tape-integrated adhesive sheet, and the dicing tape-integrated adhesive sheet and the semiconductor wafer were laminated so that the peeled surface was in contact with the surface having the soldered copper electrode of the semiconductor wafer. This was laminated with a laminator at a bonding temperature of 80 ° C. and a pressure applied to the dicing tape integrated adhesive sheet of 0.8 MPa for 30 seconds to obtain a semiconductor wafer with a dicing tape integrated adhesive sheet.
Next, the semiconductor wafer with the dicing tape-integrated adhesive sheet was diced (cut) under the following conditions from the semiconductor wafer side using a dicing saw (DFD 6360, manufactured by Disco Corporation). As a result, the semiconductor wafer was separated into individual pieces, and semiconductor chips having the following dicing size were obtained. In addition, the notch formed by this dicing had the front-end | tip reached in the intervening layer.
＜ダイシング条件＞
　　ダイシングサイズ　　　　　：１０ｍｍ×１０ｍｍ角
　　ダイシング速度　　　　　　：５０ｍｍ／ｓｅｃ
　　スピンドル回転数　　　　　：４０，０００ｒｐｍ
　　ダイシング最大深さ　　　　：０．１３０ｍｍ（シリコンウエハの表面からの切り込み量）
　　ダイシングブレードの厚さ　：１５μｍ <Dicing conditions>
Dicing size: 10 mm x 10 mm square Dicing speed: 50 mm / sec
Spindle speed: 40,000 rpm
Maximum dicing depth: 0.130 mm (cutting amount from the surface of the silicon wafer)
Dicing blade thickness: 15 μm
　次いで、半導体チップの１つをダイシングテープ一体型接着シートの支持フィルム側（ダイシングテープの基材層側）からニードルで突き上げ、突き上げた半導体チップの表面をダイボンダーのコレットで吸着しつつ上方に引き上げた。これにより、接着シート付き半導体チップをピックアップした。
　次に、フリップチップボンダー（Ｐａｎａｓｏｎｉｃ株式会社製、ＦＣＢ３）を用いて、先端に金とニッケルがコーティングされた銅からなる突起電極を有するシリコン製回路（サイズ２００ｍｍφ、個別回路のサイズ１２ｍｍ×１２ｍｍ、厚さ２００μｍ、電極の高さ１５μｍ、電極の幅３０μｍ、電極間の距離３０μｍ）の突起電極と、接着シート付き半導体チップの所定のアライメントマークとシリコン製回路基板の所定のアライメントマークをフリップチップボンダーで自動認識させることによって位置合わせを行い、シリコン製回路基板に半導体チップを２３５℃、５秒間加熱して、半田バンプの半田を溶融させて半田接続を行った。そして、１８０℃、６０分間、０．８ＭＰａの流体圧（空気圧）の雰囲気下で加熱して、フィルム状樹脂組成物を硬化させて、半導体チップとシリコン製回路基板とが接着フィルムの硬化物で接着された電子装置を得た。
　次に、シリコン製回路基板の半導体チップを搭載した面と反対側の面に、ダイシングテープをラミネーターで貼り合せた。このとき、貼り合せ条件は２５℃、圧力０．８ＭＰａ、２ｍｍ／ｓであった。 Next, one of the semiconductor chips was pushed up with a needle from the support film side (the substrate layer side of the dicing tape) of the dicing tape-integrated adhesive sheet, and the pushed-up surface of the semiconductor chip was pulled up while adsorbing with the collet of the die bonder . This picked up the semiconductor chip with an adhesive sheet.
Next, using a flip-chip bonder (manufactured by Panasonic, FCB3), a silicon circuit (size 200 mmφ, individual circuit size 12 mm × 12 mm, thickness, having a protruding electrode made of copper coated with gold and nickel at the tip) 200 μm, electrode height 15 μm, electrode width 30 μm, distance between electrodes 30 μm), a predetermined alignment mark of the semiconductor chip with the adhesive sheet and a predetermined alignment mark of the silicon circuit board are connected with a flip chip bonder. Positioning was performed by automatic recognition, and the semiconductor chip was heated on a silicon circuit board at 235 ° C. for 5 seconds to melt the solder of the solder bumps, thereby performing solder connection. Then, the film-shaped resin composition is cured by heating in an atmosphere of fluid pressure (air pressure) of 0.8 MPa at 180 ° C. for 60 minutes, and the semiconductor chip and the silicon circuit board are cured adhesive films. A bonded electronic device was obtained.
Next, a dicing tape was bonded to the surface of the silicon circuit board opposite to the surface on which the semiconductor chip was mounted with a laminator. At this time, the bonding conditions were 25 ° C., pressure 0.8 MPa, and 2 mm / s.
　次いで、ダイシングテープをウエハリングに固定して、ダイシングソー（ＤＦＤ６３６０、（株）ディスコ製）のダイシングテーブルにセットした。さらに、搭載した半導体チップと半導体チップの間をダイシングソーを用いて以下の条件でダイシング（切断）した。これにより、半導体チップを搭載したシリコン製回路基板が個片化され、半導体チップと、シリコン製回路基板とがフィルム状樹脂組成物の硬化物を介して接着された以下のダイシングサイズの電子装置（半導体装置）を得た。 Next, the dicing tape was fixed to the wafer ring and set on a dicing table of a dicing saw (DFD6360, manufactured by DISCO Corporation). Further, dicing (cutting) was performed between the mounted semiconductor chip and the semiconductor chip using a dicing saw under the following conditions. As a result, a silicon circuit board on which a semiconductor chip is mounted is separated into pieces, and the following dicing size electronic device in which the semiconductor chip and the silicon circuit board are bonded via a cured product of a film-like resin composition ( Semiconductor device) was obtained.
≪ダイシング条件≫
　　ダイシングサイズ　　　　：１２ｍｍ×１２ｍｍ角
　　ダイシング速度　　　　　：５０ｍｍ／ｓｅｃ
　　スピンドル回転数　　　　：４０，０００ｒｐｍ
　　ダイシング最大深さ　　　：０．２３ｍｍ（シリコンウエハの表面からの切り込み量）
  ダイシングブレードの厚さ：１５μｍ
　ダイシングテープ一体型接着シートを用いて、電子装置を作製し、問題なくダイシングができた。また、作製した電子装置も問題なく作動した。また、絶縁信頼性の評価を実施し、「○」となる良好な結果であった。 ≪Dicing condition≫
Dicing size: 12mm x 12mm square Dicing speed: 50mm / sec
Spindle speed: 40,000 rpm
Dicing maximum depth: 0.23 mm (cut amount from the surface of the silicon wafer)
Dicing blade thickness: 15 μm
An electronic device was manufactured using the dicing tape integrated adhesive sheet, and dicing was possible without problems. Also, the fabricated electronic device worked without any problems. In addition, the insulation reliability was evaluated, and the result was “good”.
（実施例２３）
＜接着シートの製造＞
　実施例１の固形分比率５０質量％の樹脂組成物ワニスを用いて、基材ポリエステルフィルム（ベースフィルム、帝人デュポンフィルム社製、商品名「ピューレックスＡ５３」、後のバックグラインドテープ一体型接着シートのカバーフィルムに相当する。）に厚さ５０μｍとなるように塗布して、１００℃で５分間乾燥して、厚さ２５μｍのフィルム状樹脂組成物が形成された接着シートを得た。 (Example 23)
<Manufacture of adhesive sheet>
Using the resin composition varnish with a solid content ratio of 50% by mass in Example 1, a base polyester film (base film, manufactured by Teijin DuPont Films, trade name “Purex A53”, later back grind tape integrated adhesive sheet The film was applied to a thickness of 50 μm and dried at 100 ° C. for 5 minutes to obtain an adhesive sheet on which a film-shaped resin composition having a thickness of 25 μm was formed.
＜バックグラインドテープ一体型接着シート＞
（１）バックグラインドテープ一体型接着シートの製造
ベース樹脂としてアクリル酸アルキルエステル系共重合物ニッセツＫＰ－２２５４Ｅ（日本カーバイド工業製）４４質量部、ウレタンアクリレートＨＣ－１５（大日精化工業製）４５質量部、イソシアネート系架橋剤コロネートＬ（日本ポリウレタン工業製）８質量部、光重合開始剤イルガキュア６５１（ＢＡＳＦジャパン製）３質量部を酢酸エチルに溶解させて、バックグラインドテープの粘着剤層用ワニスを調製した。 <Back grind tape integrated adhesive sheet>
(1) Manufacture of back grind tape integrated adhesive sheet 44 parts by mass of alkyl acrylate copolymer Nissetsu KP-2254E (Nippon Carbide Industries), urethane acrylate HC-15 (Daiichi Seika Kogyo) 45 Mass parts, 8 parts by mass of isocyanate-based cross-linking agent Coronate L (manufactured by Nippon Polyurethane Industry), 3 parts by mass of photopolymerization initiator Irgacure 651 (manufactured by BASF Japan) are dissolved in ethyl acetate, and the varnish for the adhesive layer of the back grind tape Was prepared.
上記バックグラインドテープの粘着剤層用ワニスを予め離型処理した厚さ３８μｍのポリエステルフィルム表面に、乾燥後の厚さが１０μｍになるように塗布し、その後、８０℃で５分間乾燥した。そして、ポリエステルフィルム上にバックグラインドテープの粘着剤層を成膜した。その後、バックグラインドテープの基材層として厚さ１２０μｍのポリエチレンとエチレン・酢酸ビニル共重合体（ＥＶＡ）からなるフィルムを上記ポリエステルフィルムと反対側面の粘着剤層側にラミネート（積層）し粘着剤層をポリエチレンとエチレン・酢酸ビニル共重合体（ＥＶＡ）からなるフィルムに転写させることによって、バックグラインドテープを得た。 The pressure-sensitive adhesive layer varnish of the back grind tape was applied to a 38 μm-thick polyester film surface that had been subjected to release treatment in advance so that the thickness after drying was 10 μm, and then dried at 80 ° C. for 5 minutes. And the adhesive layer of the back grind tape was formed into a film on the polyester film. Then, a film made of polyethylene and ethylene / vinyl acetate copolymer (EVA) having a thickness of 120 μm is laminated (laminated) on the side of the pressure-sensitive adhesive layer opposite to the polyester film as a base layer of the back grind tape. Was transferred to a film made of polyethylene and an ethylene / vinyl acetate copolymer (EVA) to obtain a back grind tape.
　次に、ロール状の金型を用いて、上記接着シートを半導体ウエハと同等の大きさに打ち抜き、その後不要部分を除去した後に、上記で得られたバックグラインドテープの粘着剤層とフィルム状樹脂組成物とが接するようにラミネートすることによって、バックグラインドテープの基材、バックグラインドテープの粘着剤層、フィルム状樹脂組成物、カバーフィルムがこの順でラミネートされたバックグラインドテープ一体型接着シートを得た。 Next, using a roll-shaped mold, the adhesive sheet is punched out to the same size as that of the semiconductor wafer, and after removing unnecessary portions, the adhesive layer and the film-like resin of the back grind tape obtained above By laminating the composition so that it comes into contact with the composition, a back grind tape integrated adhesive sheet in which the substrate of the back grind tape, the adhesive layer of the back grind tape, the film-like resin composition, and the cover film are laminated in this order is obtained. Obtained.
（２）電子装置の作製
　本発明の電子装置として、上記で得られたバックグラインドテープ一体型接着シートを用いて、下記の手順で電子装置を作製した。
表面に低融点の導電性金属として錫、銀を含む合金からなる半田付き銅電極を有する半導体ウエハ（サイズ２００ｍｍφ、個別回路のサイズ１０ｍｍ×１０ｍｍ、厚さ７２５μｍ、電極の高さ１５μｍ、電極の幅３０μｍ、電極間の距離３０μｍ、）を用意した。
バックグラインドテープ一体型接着シートからカバーフィルムを剥離し、その剥離面と、半導体ウエハの半田付き銅電極を有する面とが接するように、バックグランドテープ一体型接着シートと半導体ウエハとをラミネートし、バックグランドテープ一体型接着シート付き半導体ウエハを得た。 (2) Production of Electronic Device As the electronic device of the present invention, an electronic device was produced by the following procedure using the back grind tape integrated adhesive sheet obtained above.
Semiconductor wafer having a soldered copper electrode made of an alloy containing tin and silver as a low melting point conductive metal on the surface (size 200 mmφ, individual circuit size 10 mm × 10 mm, thickness 725 μm, electrode height 15 μm, electrode width 30 μm and a distance between electrodes of 30 μm) were prepared.
The cover film is peeled from the back grind tape integrated adhesive sheet, and the background tape integrated adhesive sheet and the semiconductor wafer are laminated so that the peeled surface is in contact with the surface having the soldered copper electrode of the semiconductor wafer. A semiconductor wafer with a background tape integrated adhesive sheet was obtained.
次いで、このバックグランドテープ一体型接着シート付き半導体ウエハのバックグラインドテープ一体型接着シートが貼り付けられた面とは反対側の面を研削し、バックグランドテープ一体型接着シート付き半導体ウエハの厚さが２００μｍとなるように研削した。その後、バックグランドテープ一体型接着シート付き半導体ウエハのバックグラインドテープ一体型接着シートが貼り付けられた面とは反対側の面（研削面）にダイシングテープをラミネートした後に、バックグランドテープ一体型接着シートの粘着剤層とフィルム状樹脂組成物の界面からバックグラインドテープを剥離した。
その後、半導体ウエハをダイシングして、フィルム状樹脂組成物付き半導体チップを得た。得られたフィルム状樹脂組成物付き半導体チップを用いて、実施例２２と同様に電子装置を作製し、同様の評価を実施した。 Then, the surface of the semiconductor wafer with the background tape integrated adhesive sheet is ground on the opposite side of the surface of the semiconductor wafer with the back grind tape integrated adhesive sheet. Was ground to 200 μm. Then, after laminating the dicing tape on the surface (grind surface) opposite to the surface where the back grind tape integrated adhesive sheet of the semiconductor wafer with the background tape integrated adhesive sheet is affixed, the background tape integrated adhesive The back grind tape was peeled from the interface between the pressure-sensitive adhesive layer of the sheet and the film-like resin composition.
Thereafter, the semiconductor wafer was diced to obtain a semiconductor chip with a film-like resin composition. Using the obtained semiconductor chip with a film-like resin composition, an electronic device was produced in the same manner as in Example 22, and the same evaluation was performed.
（評価結果）
　バックグラインドテープ一体型接着シートを用いて、電子装置を作製し、問題なく、ウエハ裏面の研削およびダイシングができた。また、作製した電子装置も問題なく作動した。また、絶縁信頼性の評価を実施し、「○」となる良好な結果であった。 (Evaluation results)
An electronic device was fabricated using a back grind tape-integrated adhesive sheet, and the wafer back surface could be ground and diced without problems. Also, the fabricated electronic device worked without any problems. In addition, the insulation reliability was evaluated, and the result was “good”.
（実施例２４）
１．バックグラインドテープ兼ダイシングテープ一体型接着シートの製造
　実施例１の固形分比率５０質量％の樹脂組成物ワニスを用いて、ポリエステルフィルム基材（ベースフィルム、帝人デュポンフィルム株式会社製、商品名：ピューレックスＡ５３、後のバックグラインドテープ兼ダイシングテープ一体型接着シートのカバーフィルムに相当する。）に厚さ５０μｍとなるように塗布した後、１００℃で５分間乾燥して溶剤を蒸発除去して、厚さ２５μｍのフィルム状樹脂組成物を得た。 (Example 24)
1. Production of Back Grinding Tape / Dicing Tape-Integrated Adhesive Sheet Using the resin composition varnish with a solid content ratio of 50% by mass of Example 1, a polyester film substrate (base film, manufactured by Teijin DuPont Films, Inc., trade name: Pew Rex A53, which corresponds to a cover film of a back grind tape and dicing tape integrated adhesive sheet later.) To a thickness of 50 μm, and then dried at 100 ° C. for 5 minutes to evaporate and remove the solvent. A film-shaped resin composition having a thickness of 25 μm was obtained.
　クリアテックＣＴ－Ｈ７１７（クラレ社製）を、押出機で、厚み１００μｍのフィルムを形成し、表面をコロナ処理して、基材フィルムを得た。次に、アクリル酸２－エチルヘキシル５０質量部、アクリル酸ブチル１０質量部、酢酸ビニル３７質量部、メタクリル酸２－ヒドロキシエチル３質量部を共重合して得られた重量平均分子量５００，０００の共重合体を離型処理した厚さ３８μｍのポリエステルフィルムに乾燥後の厚さが１０μｍになるように塗工し、８０℃で５分間乾燥し、粘着剤層を得た。その後、この粘着剤層を上述した基材フィルムのコロナ処理面にラミネートすることによって粘着剤層を転写した後にポリエステルフィルム基材を剥離した。次に上記のフィルム状樹脂組成物のみ（ウエハと接合される部分のみ残す）をハーフカットし、フィルム状樹脂組成物と、粘着剤層とが接するように貼り付けた。これにより、基材フィルム、粘着剤層、フィルム状樹脂組成物、カバーフィルムが、この順に構成されてなるバックグラインドテープ兼ダイシングテープ一体型接着シートを得た。 Using Cleartech CT-H717 (manufactured by Kuraray Co., Ltd.), a film having a thickness of 100 μm was formed with an extruder, and the surface was subjected to corona treatment to obtain a base film. Next, a copolymer having a weight average molecular weight of 500,000 obtained by copolymerizing 50 parts by mass of 2-ethylhexyl acrylate, 10 parts by mass of butyl acrylate, 37 parts by mass of vinyl acetate, and 3 parts by mass of 2-hydroxyethyl methacrylate. The polymer was release-treated on a polyester film having a thickness of 38 μm so that the thickness after drying was 10 μm, and dried at 80 ° C. for 5 minutes to obtain an adhesive layer. Thereafter, the pressure-sensitive adhesive layer was laminated on the corona-treated surface of the substrate film described above to transfer the pressure-sensitive adhesive layer, and then the polyester film substrate was peeled off. Next, only the above-mentioned film-shaped resin composition (leaving only the portion bonded to the wafer) was half-cut and pasted so that the film-shaped resin composition and the pressure-sensitive adhesive layer were in contact with each other. Thus, a back grind tape and dicing tape integrated adhesive sheet in which the base film, the pressure-sensitive adhesive layer, the film-like resin composition, and the cover film were configured in this order was obtained.
（電子装置の製造）
　本発明の電子装置として、上記で得られたバックグラインドテープ一体型接着シートを用いて、下記の手順で電子装置を作製した。
　表面に低融点の導電性金属として錫、銀を含む合金からなる半田付き銅電極を有する半導体ウエハ（サイズ２００ｍｍφ、個別回路のサイズ１０ｍｍ×１０ｍｍ、厚さ７２５μｍ、電極の高さ１５μｍ、電極の幅３０μｍ、電極間の距離３０μｍ）を用意した。
　バックグラインドテープ兼ダイシングテープ一体型接着シートのカバーフィルムを剥離して、フィルム状樹脂組成物を半導体ウエハの半田付き銅電極がついている面に温度９０℃、圧力０．３ＭＰａで貼り付けし、バックグラインドテープ兼ダイシングテープ一体型接着シートが付いた半導体ウエハを得た。 (Manufacture of electronic devices)
As the electronic device of the present invention, an electronic device was manufactured by the following procedure using the back grind tape-integrated adhesive sheet obtained above.
Semiconductor wafer having a soldered copper electrode made of an alloy containing tin and silver as a low melting point conductive metal on the surface (size 200 mmφ, individual circuit size 10 mm × 10 mm, thickness 725 μm, electrode height 15 μm, electrode width 30 μm, and the distance between the electrodes was 30 μm).
The cover film of the back grind tape / dicing tape integrated adhesive sheet is peeled off, and the film-like resin composition is attached to the surface of the semiconductor wafer with the soldered copper electrode at a temperature of 90 ° C. and a pressure of 0.3 MPa. A semiconductor wafer with a grind tape and dicing tape integrated adhesive sheet was obtained.
　そして、バックグラインドテープ兼ダイシングテープ一体型接着シート１の上側の面（図９中の上側）を、研磨装置の研磨ステージ３０４に固定し、半導体ウエハ３０３の厚さが７２５μｍから２００μｍとなるまで研削を行った。次に、この半導体ウエハを、図１０に示すようにバックグラインドテープ兼ダイシングテープ一体型接着シート１とダイサーテーブル３０５の上面とが接するように設置して、ダイシングソーを用いて、スピンドル回転数３０，０００ｒｐｍ、切断速度５０ｍｍ／ｓｅｃで１０ｍｍ×１０ｍｍ角の半導体チップにダイシング（切断）した。次に、バックグラインドテープ兼ダイシングテープ一体型接着シート１の裏面から突上げ、粘着剤層とフィルム状樹脂組成物の界面で剥離しフィルム状樹脂組成物付き半導体チップを得た。
その後、得られたフィルム状樹脂組成物付き半導体チップを用いて、実施例２２と同様に電子装置を作製し、同様の評価を実施した。 Then, the upper surface (upper side in FIG. 9) of the back grind tape / dicing tape-integrated adhesive sheet 1 is fixed to the polishing stage 304 of the polishing apparatus, and is ground until the thickness of the semiconductor wafer 303 becomes 725 μm to 200 μm. Went. Next, as shown in FIG. 10, this semiconductor wafer is placed so that the back grind tape and dicing tape integrated adhesive sheet 1 and the upper surface of the dicer table 305 are in contact with each other, and a spindle rotating speed of 30 is used using a dicing saw. The wafer was diced (cut) into a 10 mm × 10 mm square semiconductor chip at 1,000 rpm and a cutting speed of 50 mm / sec. Next, it was pushed up from the back surface of the back grind tape / dicing tape integrated adhesive sheet 1 and peeled off at the interface between the pressure-sensitive adhesive layer and the film-like resin composition to obtain a semiconductor chip with a film-like resin composition.
Then, using the obtained semiconductor chip with a film-shaped resin composition, an electronic device was produced in the same manner as in Example 22, and the same evaluation was performed.
（評価結果）
　バックグラインドテープ兼ダイシングテープ一体型接着シートを用いて、電子装置を作製し、問題なく、ウエハ裏面の研削と、ダイシングができた。また、作製した電子装置も問題なく作動した。また、絶縁信頼性の評価を実施し、「○」となる良好な結果であった。 (Evaluation results)
Using an adhesive sheet with integrated back grind tape and dicing tape, an electronic device was fabricated, and the backside of the wafer could be ground and diced without problems. Also, the fabricated electronic device worked without any problems. In addition, the insulation reliability was evaluated, and the result was “good”.
（比較例４）
　実施例２２の樹脂組成物を比較例１の樹脂組成物に変更した以外は、実施例２２と同様に電子装置を作製し、評価した。比較例１のように絶縁信頼性が劣る結果「×」となった。
（比較例５）
　実施例２３の樹脂組成物を比較例１の樹脂組成物に変更した以外は、実施例２３と同様に電子装置を作製し、評価した。比較例１のように絶縁信頼性が劣る結果「×」となった。
（比較例６）
　実施例２４の樹脂組成物を比較例１の樹脂組成物に変更した以外は、実施例２４と同様に電子装置を作製し、評価した。比較例１のように絶縁信頼性が劣る結果「×」となった。 (Comparative Example 4)
An electronic device was produced and evaluated in the same manner as in Example 22 except that the resin composition of Example 22 was changed to the resin composition of Comparative Example 1. As in Comparative Example 1, the result of inferior insulation reliability was “x”.
(Comparative Example 5)
An electronic device was produced and evaluated in the same manner as in Example 23 except that the resin composition of Example 23 was changed to the resin composition of Comparative Example 1. As in Comparative Example 1, the result of inferior insulation reliability was “x”.
(Comparative Example 6)
An electronic device was produced and evaluated in the same manner as in Example 24 except that the resin composition of Example 24 was changed to the resin composition of Comparative Example 1. As in Comparative Example 1, the result of inferior insulation reliability was “x”.
　本発明は、相対向する電極間の接続性、および絶縁信頼性が高い電子装置を提供することが求められる樹脂組成物、並びに、当該樹脂組成物の硬化物を含んでなり、高い接続性および絶縁信頼性が必要な電子装置に適用できる。 The present invention comprises a resin composition required to provide an electronic device having high connectivity between opposing electrodes and high insulation reliability, and a cured product of the resin composition. It can be applied to electronic devices that require insulation reliability.
１００　　　電子装置
１１０　　　第一基板
１１１　　　第一基板に形成された電極
１１１ａ　　金
１１１ｂ　　ニッケル
１１１ｃ　　銅ピラー
１２０　　　第二基板
１２１　　　第一基板に形成された電極
１２１ａ　　半田バンプ
１２１ｂ　　銅ピラー
１３０　　　樹脂組成物
３０１　　　バックグラインドテープ兼ダイシングテープ一体型接着シート
３０２　　　接着剤層
３２１　　　剥離基材
３０３　　　半導体ウエハ
３３１　　　機能面
３０４　　　研磨ステージ
３０５　　　ダイサーテーブル
３０６　　　ウエハリング
３０７　　　ブレード
３００　　　半導体用フィルム 100 Electronic Device 110 First Substrate 111 Electrode 111a Formed on First Substrate Gold 111b Nickel 111c Copper Pillar 120 Second Substrate 121 Electrode 121a Formed on First Substrate Solder Bump 121b Copper Pillar 130 Resin Composition 301 Back Grinding Tape Combined dicing tape adhesive sheet 302 Adhesive layer 321 Release substrate 303 Semiconductor wafer 331 Functional surface 304 Polishing stage 305 Dicer table 306 Wafer ring 307 Blade 300 Film for semiconductor

Claims (13)

  1. 　相対向する電極間に介在され、相対向する電極を電気的に接続するフィルム状の電極接続用樹脂組成物であって、
    　前記樹脂組成物は、
    （Ａ）ナフタレン骨格を有する多官能エポキシ樹脂と、
    （Ｂ）１分子中に、フェノール性水酸基と、カルボキシル基とを有する化合物と、
    （Ｃ）フィルム形成性樹脂と、
    を含有することを特徴とする樹脂組成物。     A film-like electrode connecting resin composition that is interposed between opposing electrodes and electrically connects the opposing electrodes,
    The resin composition is
    (A) a polyfunctional epoxy resin having a naphthalene skeleton;
    (B) a compound having a phenolic hydroxyl group and a carboxyl group in one molecule;
    (C) a film-forming resin;
    A resin composition comprising:
  2. 　前記請求項１に記載の樹脂組成物において、
    　前記（Ｂ）成分が、１分子中に２つ以上のフェノール性水酸基と、１つ以上のカルボキシル基とを備える化合物であることを特徴とする樹脂組成物。     In the resin composition according to claim 1,
    The resin composition, wherein the component (B) is a compound having two or more phenolic hydroxyl groups and one or more carboxyl groups in one molecule.
  3. 　前記請求項１又は２に記載の樹脂組成物において、
    　前記（Ｂ）成分が、１分子中に２つ以上のフェノール性水酸基と、芳香環に直接結合した１つ以上のカルボキシル基とを備える化合物であることを特徴とする樹脂組成物。     In the resin composition according to claim 1 or 2,
    The resin composition, wherein the component (B) is a compound having two or more phenolic hydroxyl groups in one molecule and one or more carboxyl groups directly bonded to an aromatic ring.
  4. 　前記請求項１ないし３のいずれか一項に記載の樹脂組成物において、
    　前記（Ａ）成分が、３官能エポキシ樹脂及び／又は４官能エポキシ樹脂であることを特徴とする樹脂組成物。     In the resin composition according to any one of claims 1 to 3,
    The component (A) is a trifunctional epoxy resin and / or a tetrafunctional epoxy resin.
  5. 　前記請求項１ないし４のいずれか一項に記載の樹脂組成物において、
    　前記樹脂組成物全体に対して、前記（Ａ）成分の含有量が１質量％以上、２０質量％以下であることを特徴とする樹脂組成物。     In the resin composition according to any one of claims 1 to 4,
    Content of the said (A) component is 1 mass% or more and 20 mass% or less with respect to the said whole resin composition, The resin composition characterized by the above-mentioned.
  6. 　前記請求項１ないし５のいずれか一項に記載の樹脂組成物において、
    　前記（Ｂ）成分の含有量が３質量％以上、２５質量％以下であることを特徴とする樹脂組成物。     In the resin composition according to any one of claims 1 to 5,
    Content of the said (B) component is 3 mass% or more and 25 mass% or less, The resin composition characterized by the above-mentioned.
  7. 　前記請求項１ないし６のいずれか一項に記載の樹脂組成物において、
    　前記（Ａ）成分と、前記（Ｂ）成分との含有質量比率［（Ｂ）／（Ａ）］が０．２以上、１６以下であることを特徴とする樹脂組成物。     In the resin composition according to any one of claims 1 to 6,
    The resin composition, wherein a content mass ratio [(B) / (A)] of the component (A) and the component (B) is 0.2 or more and 16 or less.
  8. 　前記請求項１ないし７のいずれか一項に記載の樹脂組成物において、
    　さらに、（Ｄ）フェノール樹脂、を含有することを特徴とする樹脂組成物。     In the resin composition according to any one of claims 1 to 7,
    Furthermore, (D) phenol resin, The resin composition characterized by the above-mentioned.
  9. 　前記請求項１ないし８のいずれか一項に記載の樹脂組成物と、ベースフィルムとを有することを特徴とする、接着シート。 An adhesive sheet comprising the resin composition according to any one of claims 1 to 8 and a base film.
  10. 　前記請求項１ないし８のいずれか一項に記載の樹脂組成物と、ダイシングテープとを有することを特徴とする、ダイシングテープ一体型接着シート。 A dicing tape-integrated adhesive sheet comprising the resin composition according to any one of claims 1 to 8 and a dicing tape.
  11. 　前記請求項１ないし８のいずれか一項に記載の樹脂組成物と、バックグラインドテープとを有することを特徴とする、バックグラインドテープ一体型接着シート。 A back grind tape-integrated adhesive sheet comprising the resin composition according to any one of claims 1 to 8 and a back grind tape.
  12. 　前記請求項１ないし８のいずれか一項に記載の樹脂組成物と、ダイシングテープとバックグラインドテープとを兼ねたバックグラインドテープ兼ダイシングテープとを有することを特徴とする、バックグラインドテープ兼ダイシングテープ一体型接着シート。 A back grind tape and dicing tape, comprising: the resin composition according to any one of claims 1 to 8; and a back grind tape and dicing tape that serves as both a dicing tape and a back grind tape. Integrated adhesive sheet.
  13. 　請求項１ないし８のいずれか一項に記載の樹脂組成物の硬化物を有することを特徴とする電子装置。 An electronic device comprising a cured product of the resin composition according to any one of claims 1 to 8.
PCT/JP2013/078268 2012-10-18 2013-10-18 Resin composition, adhesive sheet, dicing tape-integrated type adhesive sheet, back grind tape-integrated type adhesive sheet, back grind tape/dicing tape-integrated type adhesive sheet, and electronic device WO2014061767A1 (en)

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TWI664229B (en) * 2015-09-16 2019-07-01 日商琳得科股份有限公司 Film for forming protective film
JP7031141B2 (en) * 2017-06-01 2022-03-08 昭和電工マテリアルズ株式会社 Semiconductor processing tape
JP7285209B2 (en) * 2019-12-26 2023-06-01 信越化学工業株式会社 Underlayer film forming material, underlayer film forming method, and pattern forming method

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