TWI778070B - Use of tape for semiconductor processing and method for manufacturing semiconductor device - Google Patents

Abstract

The tape for semiconductor processing of the present invention has a base material layer, an adhesive layer, and an adhesive layer having thermosetting properties laminated in this order, and after curing treatment at 130° C. for 1 hour, the shrinkage rate of the adhesive layer is less than 2% and then The thermoelastic coefficient of the layer is less than 5 MPa. The tape for semiconductor processing can be used as a dicing tape and a tape for temporary fixation in the manufacturing process of a semiconductor device, for example.

Description

Use of tape for semiconductor processing and manufacturing method of semiconductor device Law

The present invention relates to a belt for semiconductor processing.

In recent years, demands for miniaturization, weight reduction, and high functionality of electronic devices have increased. In response to these demands, miniaturization, thinning, and high-density packaging are required for semiconductor devices constituting electronic equipment.

The semiconductor device is manufactured through the following steps: a sealing step of sealing a semiconductor wafer fixed to a substrate, glass, or a temporary fixing material with a resin; a dicing step of singulating the sealed semiconductor wafer if necessary . In the manufacturing process, there is also a case where the step of grinding the wafer is performed.

These steps are performed more often than in a state where a wafer, a substrate, or the like is covered with a protective tape. The protective tape is usually attached to the surface to be protected before a specific processing step and peeled off after the processing step.

Patent Document 1 discloses a heat-resistant adhesive sheet for semiconductor manufacturing used in the manufacture of a substrateless semiconductor package that does not use a metal lead frame, an adhesive used for the sheet, and the use of the sheet A method of manufacturing a semiconductor device of a material.

[Prior Art Literature]

[Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2011-129649

The inventors of the present invention conducted research on a case where a dicing die tape bonding, which has been used previously, is used as a temporary fixing tape required in various steps in the manufacturing process of a semiconductor device. If a single tape can be used for both the dicing and bonding tapes and the tapes for temporary fixing, the versatility of the tapes is improved, and semiconductor devices can be efficiently manufactured.

Heat resistance is mentioned as one of the properties that a tape (hereinafter, referred to as "tape for semiconductor processing") applicable to various steps in the manufacturing process of a semiconductor device should have. According to the study by the present inventors, the adhesive layer in the adhesive sheet described in Patent Document 1 contains a rubber component as a main component, and therefore has insufficient heat resistance, and there is room for improvement in this respect.

Excellent peelability is mentioned as another characteristic which the tape for semiconductor processing should have. Conventionally, the tape used for temporary fixation has been designed so that the adhesive layer has moderate flexibility from the viewpoint of ensuring moderate releasability.

However, merely imparting flexibility to the adhesive layer may not necessarily achieve excellent releasability. Specifically, in the peeling step, there are problems such as generation of sticking.

This invention is made in view of the said subject, and an object is to provide the tape for semiconductor processing which has excellent versatility in a semiconductor manufacturing process.

The tape for semiconductor processing of the present invention has a base material layer, an adhesive layer, and an adhesive layer having thermosetting properties laminated in sequence, and the shrinkage rate of the adhesive layer is less than 2% after being cured at 130° C. for 1 hour, and The thermoelastic coefficient of the subsequent layer is less than 5 MPa. Since the adhesive layer after the hardening treatment at 130° C. for 1 hour satisfies these conditions, the tape for semiconductor processing can be applied to various processing steps in the manufacturing process of a semiconductor device. Specifically, heat resistance and peelability required in the above-mentioned various processing steps can be imparted to the adhesive layer.

After the hardening treatment is performed at 130° C. for 1 hour, the peeling force of the adhesive layer with respect to the wafer is preferably 15 N/m or more. When the adhesive layer satisfies this requirement, the adhesiveness to the wafer can be sufficiently ensured.

Applications other than the dicing tape of the semiconductor processing tape of the present invention include temporary fixing of substrates and wafers. That is, the tape for semiconductor processing of the present invention can be used for temporarily fixing a substrate to one surface of an adhesive layer and for temporarily detaching a wafer after peeling off the base material layer and the adhesive layer in the manufacturing process of a semiconductor device. fixed on the other side of the adhesive layer. For example, as described above, when the tape for semiconductor processing is used for temporary fixation, none of the base material layer, the adhesive layer, and the adhesive layer remains on the semiconductor device to be finally produced.

The adhesive layer preferably contains a thermoplastic resin, a thermosetting resin, a hardening accelerator, and a filler. In this case, when the content of the thermoplastic resin in the adhesive layer is set to 100 parts by mass, the content of the thermosetting resin in the adhesive layer is preferably 1 part by mass to 40 parts by mass. In addition, when the content of the thermoplastic resin in the adhesive layer is set to 100 parts by mass, the content of the filler in the adhesive layer is preferably 1 part by mass to 330 parts by mass amount.

The adhesive layer satisfying these requirements can further stably improve heat resistance and peelability in various processing steps in the manufacturing process of the semiconductor device.

The adhesive layer can be an ultraviolet (Ultra Violet, UV) type or a non-UV type.

According to the present invention, a tape for semiconductor processing having excellent versatility in a semiconductor manufacturing process is provided.

1: substrate layer

2: Adhesive layer

3, 3a: Next layer

10: Tape for semiconductor processing

20, 30, 40: Laminate

42: Thimble

44: Suction chuck

50. Wa: Semiconductor components

60: Support substrate

60a: The surface of the supporting substrate

70: Bonding wire

80: Resin sealant

90: Solder Ball

100: Semiconductor Devices

F1: One of the faces of the next layer

F2: The other side of the next layer

S: substrate

W: semiconductor wafer

Wc: circuit surface

Ws: face

FIG. 1 is a cross-sectional view schematically showing an embodiment of the tape for semiconductor processing of the present invention.

FIGS. 2( a ) to 2 ( f ) are cross-sectional views schematically showing steps of manufacturing a semiconductor device using the tape for semiconductor processing shown in FIG. 1 as a dicing tape.

3 is a cross-sectional view schematically showing an example of a semiconductor device manufactured using the tape for semiconductor processing shown in FIG. 1 .

FIGS. 4( a ) to 4( f ) are cross-sectional views schematically showing the steps of manufacturing a semiconductor device using the tape for semiconductor processing shown in FIG. 1 as a tape for temporary fixing.

Hereinafter, embodiments of the present invention will be described with reference to the drawings as appropriate. In addition, this invention is not limited to the following embodiment. In this specification, a (meth)acrylic group means an acrylic group or a methacrylic group.

<Semiconductor processing tape>

FIG. 1 is a cross-sectional view schematically showing a tape for semiconductor processing according to the present embodiment. The tape 10 for semiconductor processing shown in FIG. 1 is laminated|stacked in this order with the base material layer 1, the adhesive layer 2, and the adhesive layer 3 which has thermosetting property. The tape 10 for semiconductor processing can be applied to both the dicing tape and the tape for temporary fixation in the manufacturing process of a semiconductor device. In order to achieve this, after the semiconductor processing tape 10 is cured at 130° C. for 1 hour, the shrinkage of the adhesive layer 3 is less than 2%, and the thermoelastic coefficient of the adhesive layer 3 is less than 5 MPa. Since the adhesive layer 3 after the curing treatment at 130° C. for 1 hour satisfies these conditions, the tape 10 for semiconductor processing can impart the adhesive layer 3 with heat resistance and peeling required in various processing steps in the manufacturing process of the semiconductor device. sex.

As mentioned, the shrinkage of the adhesive layer 3 was less than 2% after curing at 130° C. for 1 hour. This value is preferably 1.8% or less, more preferably 1.6% or less. When the value is less than 2%, even when heat is applied to the adhesive layer 3 in a state where a wafer or a substrate is temporarily fixed to the adhesive layer 3 during the manufacturing process of the semiconductor device, positional displacement can be sufficiently suppressed.

The shrinkage rate of the next layer 3 can be obtained as follows. The tape 10 for semiconductor processing is cut to a predetermined size (for example, 100 mm×100 mm), and the base material layer 1 and the adhesive layer 2 are peeled off therefrom, thereby preparing a sample including only the adhesive layer 3 . This was heated and hardened at 130 degreeC for 1 hour, and the dimension of the sample after hardening treatment was measured. The shrinkage ratio was calculated by substituting the sample area before thermosetting and the sample area after thermosetting into the following formula.

Shrinkage rate (%)=(Sample area after hardening)/(Sample area before hardening)×100

As described, the thermoelastic coefficient of the adhesive layer 3 was less than 5 MPa after the curing treatment at 130° C. for 1 hour. This value is preferably 4.5 MPa or less, more preferably 4 MPa or less. Since this value is less than 5 MPa, even if heat is applied to the adhesive layer 3 in a state where a wafer or a substrate is temporarily fixed to the adhesive layer 3 during the manufacturing process of the semiconductor device, the adhesive layer 3 has a moderate flexibility, whereby the adhesive layer 3 has moderate flexibility. This enables excellent peelability. In addition, the lower limit value of the said thermoelasticity coefficient of the adhesive layer 3 is, for example, 1 MPa.

The thermoelastic coefficient of the next layer 3 can be obtained as follows. The tape 10 for semiconductor processing is cut into predetermined dimensions, and the base material layer 1 and the adhesive layer 2 are peeled off therefrom, thereby preparing a sample including only the adhesive layer 3 . It was heated at 130°C for 1 hour and hardened. The thus obtained adhesive layer 3 after the hardening treatment is cut into a predetermined size (for example, 4 mm×30 mm) to obtain a sample. The measurement was performed using the dynamic viscoelasticity measuring apparatus of this sample. That is, a tensile load was applied to the sample, and the measurement was performed at -50°C to 300°C under the conditions of a frequency of 10 Hz and a temperature increase rate of 10°C/min. Let the elastic coefficient at a temperature of 100°C be the thermoelastic coefficient.

From the viewpoint of sufficiently securing the adhesiveness of the adhesive layer 3 to the wafer, the peeling force of the adhesive layer 3 to the wafer is preferably 15 N/m or more after curing treatment at 130° C. for 1 hour. More preferably, it is 20N/m-200N/m, More preferably, it is 25N/m-150N/m.

The next layer 3 preferably contains a thermoplastic resin, a thermosetting resin, a hardened accelerators, and fillers. Assuming that the content of the thermoplastic resin in the adhesive layer 3 is 100 parts by mass, the content of the thermosetting resin in the adhesive layer 3 is preferably 1 to 40 parts by mass, more preferably 5 to 39 parts by mass , and more preferably 10 parts by mass to 38 parts by mass. The content of the hardening accelerator in the subsequent layer 3 is preferably 0.01 to 3 parts by mass, more preferably 0.02 to 2 parts by mass, still more preferably 0.03 to 1 part by mass. The content of the filler in the next layer 3 is preferably 1 part by mass to 330 parts by mass, more preferably 1 part by mass to 300 parts by mass, further preferably 5 parts by mass to 200 parts by mass, and particularly preferably 10 parts by mass to 100 parts by mass share. The adhesive layer 3 that satisfies these requirements can further stably improve the heat resistance and peeling resistance required in various processing steps in the manufacturing process of the semiconductor device.

The next layer 3 and the adhesive layer 2 are preferably sufficiently adhered so as not to peel off during the processing step. The adhesion strength of the next layer 3 and the adhesive layer 2 can be evaluated by the T-peel strength of both. The T-shaped peel strength (peeling speed: 50 mm/min) of the subsequent layer 3 and the adhesive layer 2 is preferably 15 N/m or more, more preferably 16 N/m to 100 N/m. The T-peel strength can be obtained by the following method. After bonding the adhesive layer 3 and the adhesive layer 2 with a laminator, a 25 mm wide incision was cut to prepare a sample for measurement. At this time, when a UV irradiation type adhesive is used, UV irradiation is preferably performed. The peeling speed was measured at 50 mm/min.

Hereinafter, the adhesive layer 3 , the adhesive layer 2 , and the base material layer 1 constituting the tape 10 for semiconductor processing will be described.

[the next layer]

As described above, the adhesive layer 3 preferably contains thermoplastic resin, thermosetting resin, Hardening accelerators, and fillers.

(thermoplastic resin)

As the thermoplastic resin, a resin having thermoplasticity, or a resin having thermoplasticity in an uncured state at least and forming a cross-linked structure after heating can be used. The thermoplastic resin is preferably a (meth)acrylic copolymer having a reactive group (hereinafter, also referred to as "reaction containing (meth)acrylic copolymer”).

As a thermoplastic resin, when a reactive group-containing (meth)acrylic copolymer is contained, the adhesive layer 3 may be in a state not containing a thermosetting resin. That is, it may be an aspect containing a reactive group-containing (meth)acrylic copolymer, a hardening accelerator, and a filler.

The thermoplastic resins may be used alone or in combination of two or more.

Examples of the (meth)acrylic copolymer include (meth)acrylic acid ester copolymers such as acrylic glass and acrylic rubber, and acrylic rubber is preferred. The acrylic rubber is preferably formed by the copolymerization of monomers selected from (meth)acrylates and acrylonitrile, mainly composed of acrylates.

Examples of (meth)acrylates include methyl acrylate, ethyl acrylate, propyl acrylate, isopropyl acrylate, butyl acrylate, isobutyl acrylate, hexyl acrylate, cyclohexyl acrylate, 2-ethyl acrylate Hexyl methacrylate, lauryl acrylate, methyl methacrylate, ethyl methacrylate, propyl methacrylate, isopropyl methacrylate, butyl methacrylate, isobutyl methacrylate, hexyl methacrylate ester, cyclohexyl methacrylate, 2-ethylhexyl methacrylate, methacrylate Cinnamomum et al.

As a (meth)acrylate copolymer, the copolymer containing butyl acrylate and acrylonitrile as a copolymerization component, and the copolymer containing ethyl acrylate and acrylonitrile as a copolymerization component are preferable.

The reactive group-containing (meth)acrylic copolymer is preferably a reactive group-containing (meth)acrylic copolymer containing a (meth)acrylic monomer having a reactive group as a copolymerization component. Such a reactive group-containing (meth)acrylic copolymer can be obtained by copolymerizing a monomer composition containing a reactive group-containing (meth)acrylic monomer and the monomer.

From the viewpoint of improving heat resistance, the reactive group is preferably an epoxy group, a carboxyl group, an acryl group, a methacryloyl group, a hydroxyl group, and an epithio group, and among them, in terms of crosslinkability, more preferred For epoxy and carboxyl.

In the present embodiment, the reactive group-containing (meth)acrylic copolymer is preferably an epoxy group-containing (meth)acrylic copolymer containing a (meth)acrylic monomer having an epoxy group as a copolymerization component . In this case, examples of the (meth)acrylic monomer having an epoxy group include glycidyl acrylate, 4-hydroxybutyl acrylate glycidyl ether, 3,4-epoxycyclohexyl acrylate, methyl acrylate, and methyl acrylate. Glycidyl acrylate, 4-hydroxybutyl methacrylate glycidyl ether, 3,4-epoxycyclohexyl methyl methacrylate, etc. From the viewpoint of heat resistance, the (meth)acrylic monomer having a reactive group is preferably glycidyl acrylate and glycidyl methacrylate.

The Tg of the thermoplastic resin is preferably -50°C to 50°C. When the Tg of the thermoplastic resin is 50° C. or lower, the flexibility of the adhesive layer 3 can be easily secured. In addition, when attached to When there are irregularities in the to-be-adhered body, it is easy to follow and has moderate adhesiveness. On the other hand, when the Tg of the thermoplastic resin is -50°C or higher, the flexibility of the adhesive layer 3 can be easily suppressed from becoming too high, and excellent handleability, adhesiveness, and releasability can be achieved.

The Tg of the thermoplastic resin is an intermediate point glass transition temperature value obtained by differential scanning calorimetry (DSC (Differential Scanning Calorimetry)). Specifically, the Tg of the thermoplastic resin is determined by measuring the calorific change under the conditions of a temperature increase rate of 10°C/min and a measurement temperature of -80°C to 80°C, and is determined by a method based on Japanese Industrial Standards (JIS) K 7121:1987. Method calculated midpoint glass transition temperature.

The weight average molecular weight of the thermoplastic resin is preferably 100,000 or more and 2,000,000 or less. When the weight average molecular weight is 100,000 or more, it is easy to ensure heat resistance when used for temporary fixation. On the other hand, when the weight average molecular weight is 2,000,000 or less, when it is used for temporary fixation, it is easy to suppress the fall of the flow and the fall of the adhesiveness. From this viewpoint, the weight average molecular weight of the thermoplastic resin is more preferably 500,000 or more and 2,000,000 or less, and still more preferably 1,000,000 or more and 2,000,000 or less. In addition, the weight average molecular weight is a polystyrene conversion value obtained by gel permeation chromatography (Gel Permeation Chromatography, GPC) and using the calibration curve using standard polystyrene.

When the (meth)acrylic copolymer having a reactive group contains glycidyl acrylate or glycidyl methacrylate as a copolymer component, the total content of these components is preferably 0.1 based on the total amount of the copolymer component. mass%~20 mass %, more preferably 0.5% by mass to 15% by mass, still more preferably 1.0% by mass to 10% by mass. When the content is within the above range, the flexibility of the adhesive layer 3 and the adhesiveness and releasability can be achieved at a higher level.

As the above-mentioned general reactive group-containing (meth)acrylic copolymer, those obtained by polymerization methods such as bead polymerization and solution polymerization can be used. In addition, commercially available products such as HTR-860P-3CSP (trade name, manufactured by Nagase Chemtex Co., Ltd.) can also be used.

(thermosetting resin)

As a thermosetting resin, if it is a resin hardened by heat, it can be used without a restriction|limiting in particular. As a thermosetting resin, an epoxy resin, an acrylic resin, a silicone resin, a phenol resin, a thermosetting polyimide resin, a polyurethane resin, a melamine resin, a urea resin, etc. are mentioned. These can be used alone or in combination of two or more.

The epoxy resin is not particularly limited as long as it is cured and has a heat-resistant effect. As the epoxy resin, bifunctional epoxy resins such as bisphenol A-type epoxy resins, and novolak-type epoxy resins such as phenol novolak-type epoxy resins and cresol novolak-type epoxy resins can be used. As the epoxy resin, conventionally known ones such as a polyfunctional epoxy resin, a glycidylamine-type epoxy resin, a heterocyclic ring-containing epoxy resin, and an alicyclic epoxy resin can be used.

Examples of bisphenol A epoxy resins include Epikote 807, Epikote 815, Epikote 825, Epikote 827, Epikote 827 Epikote 828, Epikote 834, Epikote 1001, Epikote 1004, Epikote 1007, Epikote 1009 (all manufactured by mitsubishi chemical (stock) ); DER-330, DER-301, DER-361 (all manufactured by Dow Chemical); YD8125, YDF8170 (all manufactured by Todo Chemical Co., Ltd.), etc.

Examples of phenol novolac epoxy resins include: Epikote 152, Epikote 154 (both are manufactured by Mitsubishi Chemical Co., Ltd.); EPPN-201 (Japan Chemical Co., Ltd.) Medicine (stock) manufacture); DEN-438 (Dow Chemical (Dow Chemical) company manufacture) and so on.

Examples of o-cresol novolak epoxy resins include: YDCN-700-10 (manufactured by Nippon Steel & Sumitomo Metal Chemical Co., Ltd.); EOCN-102S, EOCN-103S, EOCN-104S, EOCN-1012, EOCN-1025 , EOCN-1027 (all manufactured by Nippon Chemical Co., Ltd.); YDCN701, YDCN702, YDCN703, YDCN704 (all manufactured by Todo Chemical Co., Ltd.), etc.

Examples of polyfunctional epoxy resins include: Epon 1031S (manufactured by Mitsubishi Chemical Co., Ltd.); Araldite 0163 (manufactured by BASF Japan); Danakaur (Denacol) EX-611, EX-614, EX-614B, EX-622, EX-512, EX-521, EX-421, EX-411, EX-321 (all are Nagase chemtex (stock) ) manufacture) etc.

Examples of amine-type epoxy resins include Epikote 604 (manufactured by Mitsubishi Chemical Co., Ltd.); YH-434 (Toto Chemical Co., Ltd.) Manufacturing); Tetrad (TETRAD)-X, Tetrad (TETRAD)-C (both are manufactured by Mitsubishi Gas Chemical (stock)); ELM-120 (Sumitomo Chemical (stock) Manufacturing) and so on.

Examples of the epoxy resin containing a heterocycle include: Araldite PT810 (manufactured by BASF Japan); ERL4234, ERL4299, ERL4221, and ERL4206 (all manufactured by Union Carbide) Wait. These epoxy resins may be used alone or in combination of two or more.

As the epoxy resin hardener as a part of the thermosetting resin component, commonly used known resins can be used. Specifically, amines; polyamides; acid anhydrides; polysulfides; boron trifluoride; bisphenol A, bisphenol F, bisphenol S and the like having two or more phenolic hydroxyl groups in one molecule phenolic resins such as phenol novolac resin, bisphenol A novolac resin, cresol novolac resin, etc. As an epoxy resin hardener, phenol resins, such as a phenol novolak resin, a bisphenol A novolak resin, and a cresol novolak resin, are especially preferable from the viewpoint of being excellent in galvanic corrosion resistance at the time of moisture absorption.

Furthermore, the epoxy hardener may be used together with the epoxy resin, or may be used alone.

Among the phenol resin hardeners, it is preferable to use: Phenolite LF2882, Phenolite LF2822, Phenolite TD-2090, Phenolite TD -2149, Phenolite VH-4150, Phenolite VH4170 (all manufactured by DIC (stock), trade name); H-1 (manufactured by Minghe Chemicals (stock), brand name); Epi-Cure MP402FPY, Epi-Cure YL6065, Epi-Cure YLH129B65, Milex XL, Milex XLC, Milex XLC-LL, Milex RN, Milex RS, American Milex VR (both are manufactured by Mitsubishi Chemical (stock), trade name).

(hardening accelerator)

Examples of curing accelerators include imidazoles, dicyandiamide derivatives, dihydrazine dicarboxylate, triphenylphosphine, tetraphenylphosphonium tetraphenyl borate, 2-ethyl-4-methylimidazole- Tetraphenylborate, 1,8-diazabicyclo[5.4.0]undecene-7-tetraphenylborate, etc. These can be used alone or in combination of two or more.

When the adhesive layer 3 contains the (meth)acrylic copolymer which has an epoxy group, it is preferable to contain the hardening accelerator which accelerates hardening of the epoxy group contained in the said acrylic copolymer. Examples of curing accelerators that promote curing of epoxy groups include phenol-based curing agents, acid anhydride-based curing agents, amine-based curing agents, imidazole-based curing agents, imidazoline-based curing agents, triazine-based curing agents, and phosphine-based curing agents agent. Among these, from the viewpoint of rapid hardening property, heat resistance, and peelability, an imidazole-based hardener which can be expected to shorten the process time and improve workability is preferred. These compounds may be used alone or in combination of two or more.

With respect to 100 parts by mass of the thermoplastic resin, the content of the hardening accelerator in the adhesive layer 3 is preferably 0.02 parts by mass to 20 parts by mass, more preferably 0.025 parts by mass to 10 parts by mass, and still more preferably 0.025 parts by mass to 3 parts by mass , 0.025 parts by mass to 0.05 parts by mass are particularly preferred. When the content of the hardening accelerator is within the above range, there is a tendency that the reduction in storage stability can be sufficiently suppressed while improving the hardenability of the adhesive layer 3 . Towards.

(inorganic filler)

In the adhesive layer 3, inorganic fillers can be prepared. Examples of inorganic fillers include metal fillers such as silver powder, gold powder, and copper powder; inorganic fillers such as silica, alumina, boron nitride, titania, glass, iron oxide, and ceramics. Metal inorganic fillers, etc. Inorganic fillers can be selected according to the desired function.

The inorganic filler preferably has an organic group on the surface. By modifying the surface of the inorganic filler with an organic group, it is easy to improve the dispersibility in an organic solvent when preparing a varnish for forming the adhesive layer 3, and it is easy to suppress the shrinkage of the adhesive layer 3, improve the elastic modulus, and improve the peelability .

The inorganic filler having an organic group on the surface can be obtained, for example, by mixing the silane coupling agent represented by the following formula (B-1) with the inorganic filler, and stirring at a temperature of 30° C. or higher. The surface modification of the inorganic filler with organic groups can be confirmed by UV measurement, infrared (Infrared Radiation, IR) measurement, X-ray photoelectron spectroscopy (X-ray photoelectron spectroscopy, XPS) measurement and the like.

In formula (B-1), X represents a group selected from the group consisting of phenyl, glycidyloxy, acryloxy, methacryloyl, mercapto, amine, vinyl, isocyanate and methacryloyloxy In the organic group in the group, s represents 0 or an integer of 1 to 10, and R ¹¹ , R ¹² and R ¹³ each independently represent an alkyl group having 1 to 10 carbon atoms.

Examples of the alkyl group having 1 to 10 carbon atoms include methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, isopropyl, isobutyl and the like .

From the viewpoint of easy availability, the alkyl group having 1 to 10 carbon atoms is preferably a methyl group, an ethyl group, and a pentyl group. From the viewpoint of heat resistance, X is preferably an amine group, a glycidyloxy group, a mercapto group and an isocyanate group, and more preferably a glycidyloxy group and a mercapto group. From the viewpoint of suppressing film fluidity at high heat and improving heat resistance, s in formula (B-1) is preferably 0 to 5, more preferably 0 to 4.

Examples of the silane coupling agent include trimethoxyphenylsilane, dimethyldimethoxyphenylsilane, triethoxyphenylsilane, dimethoxymethylphenylsilane, vinyltrimethoxysilane , vinyltriethoxysilane, vinyltris(2-methoxyethoxy)silane, N-(2-aminoethyl)-3-aminopropylmethyldimethoxysilane, N -(2-aminoethyl)-3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3-glycidoxy Propyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-isocyanatopropyltriethyl Oxysilane, 3-Methacryloyloxypropyltrimethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, N-(1,3-dimethyl butylene)-3-(triethoxysilyl)-1-propylamine, N,N'-bis(3-(trimethoxysilyl)propyl)ethylenediamine, polyoxyethylenepropyltrioxane Oxysilane, polyethoxydimethylsiloxane, etc.

Among these, 3-aminopropyltriethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-isocyanatopropyltriethoxysilane, 3-mercaptopropyl Trimethoxysilane, more preferably trimethoxyphenylsilane, 3-glycidoxypropyltrimethoxysilane, 3-mercaptopropyltrimethoxysilane. A silane coupling agent may be used individually by 1 type, or may be used in combination of 2 or more types.

The content of the coupling agent is preferably 0.01 parts by mass to 50 parts by mass, more preferably 0.05 parts by mass to 20 parts by mass, relative to 100 parts by mass of the inorganic filler, from the viewpoint of achieving a balance between heat resistance and storage stability. From the viewpoint of improving heat resistance, the mass part is more preferably 0.5 to 10 parts by mass.

The content of the inorganic filler in the adhesive layer 3 is preferably 330 parts by mass or less, more preferably 180 parts by mass or less, and still more preferably 100 parts by mass or less, relative to 100 parts by mass of the thermoplastic resin. The lower limit of the content of the inorganic filler is not particularly limited, but is preferably 1 part by mass or more, more preferably 5 parts by mass or more, and still more preferably 8 parts by mass or more with respect to 100 parts by mass of the thermoplastic resin. By making content of an inorganic filler into the said range, it becomes easy to suppress the shrinkage of the adhesive layer 3, to improve the elastic modulus, and to improve the peelability.

(organic filler)

Organic fillers can be adjusted in the adhesive layer 3 . Examples of the organic filler include carbon, rubber-based fillers, silicone-based fine particles, polyimide fine particles, polyimide fine particles, and the like. The content of the organic filler is preferably 300 parts by mass or less, more preferably 200 parts by mass or less, and still more preferably 100 parts by mass or less, relative to 100 parts by mass of the thermoplastic resin. The lower limit of the content of the organic filler is not particularly limited, and relative to 100 mass of the thermoplastic resin parts by weight, preferably 5 parts by mass or more.

(Organic solvents)

Next, the layer 3 may be further diluted with an organic solvent if necessary. The organic solvent is not particularly limited, and can be determined from the boiling point in consideration of volatility at the time of film formation and the like. Specifically, methanol, ethanol, 2-methoxyethanol, 2-ethoxyethanol, 2-butoxyethanol, and methyl ethyl alcohol are preferred from the viewpoint of difficulty in curing the film during film formation. Base ketone, acetone, methyl isobutyl ketone, toluene, xylene and other solvents with relatively low boiling points. In addition, for the purpose of improving film formability and the like, it is preferable to use a solvent having a relatively high boiling point, such as dimethylacetamide, dimethylformamide, N-methylpyrrolidone, and cyclohexanone. These solvents may be used alone or in combination of two or more.

[adhesive layer]

The adhesive layer 2 is preferably one that has adhesive force at room temperature and that has adhesive force to the adhesive layer 3 . The adhesive layer 2 may be a UV type (hardened by high-energy rays such as ultraviolet rays or radiation) or a non-UV type (eg, hardened by heat).

In the case of using a UV-type adhesive, it is preferable that the adhesive for forming the adhesive layer 2 contains an acrylic copolymer, a crosslinking agent, and a photopolymerization initiator.

In the case of using a non-UV type adhesive, in order to adjust the adhesive force, as a cross-linking agent that reacts with the functional group of the base resin by a cross-linking reaction, it is preferable to have an epoxy group, an isocyanate group, an aziridine group. At least one functional group in the pyridyl group and the melamine group. These crosslinking agents may be used alone or in combination of two or more.

Examples of the matrix resin include acrylic resins, various synthetic rubbers, natural rubbers, polyimide resins, and the like. From the viewpoint that adhesives are difficult to produce residues, the base The bulk resin preferably has functional groups that can react with other additives, such as hydroxyl groups, carboxyl groups, and the like.

In addition, when the reaction rate is slow, a catalyst such as amine or tin can be suitably used. Arbitrary components such as tackifiers such as rosin-based and terpene-based resins, and various surfactants may be appropriately contained in order to adjust the adhesive properties to such an extent that the effects of the present invention are not affected.

The thickness of the adhesive layer 2 is preferably 1 μm to 100 μm, more preferably 2 μm to 50 μm, and still more preferably 5 μm to 40 μm. When the thickness of the adhesive layer 2 is thinner than 1 μm, it is difficult to secure sufficient adhesive force with the adhesive layer, and there is a possibility that processing is difficult.

[Substrate layer]

As the base material layer 1, a known polymer sheet or tape can be used. Specific examples include: crystalline polypropylene, amorphous polypropylene, high-density polyethylene, medium-density polyethylene, low-density polyethylene, ultra-low-density polyethylene, low-density linear polyethylene, polybutene , polyolefins such as polymethylpentene, ethylene-vinyl acetate copolymers, ionomer resins, ethylene-(meth)acrylic acid copolymers, ethylene-(meth)acrylate (random, alternating) copolymers, Polyester such as ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, Polyetheretherketone, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylene sulfide, aramid (paper), glass, glass cloth, fluororesin, polychlorine Ethylene, polyvinylidene chloride, cellulose resin, silicone resin. You can also use these mixed plasticizers, silica, anti-adhesion materials, slip agents, A mixture of antistatic agents, etc.

Among the above, preferably selected from polypropylene, polyethylene-polypropylene random copolymer, polyethylene-polypropylene block copolymer, ethylene-vinyl acetate copolymer, ionomer resin, ethylene-(methyl) ) The layer containing at least one of the acrylic copolymers as a main component is in contact with the adhesive layer. These resins are also preferable from the viewpoints of Young's coefficient, stress relaxation properties, melting point and other properties, as well as from the viewpoint of price, recycling of waste materials after use, etc., and from the viewpoint of easily obtaining the effect of surface modification by ultraviolet rays. good.

The base material layer 1 may be a single layer, and may have a multi-layer structure in which layers including different materials are stacked, if necessary. As a method for producing such a base material, a base material layer having different layers can be produced at one time by a multi-layer extrusion method, and can also be obtained by the following method. The tape produced by the single-layer extrusion method is bonded using an adhesive, or bonded by thermal fusion. In addition, in order to control the adhesiveness with the adhesive layer 2, a surface roughening process, such as a matte process and a corona process, may also be performed to the base material layer 1 as needed.

<Production method of tape for semiconductor processing>

The tape 10 for semiconductor processing can be produced by the method described below, for example. That is, first, on the release film, the adhesive layer 3 is coated by a blade coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, a curtain coating method, or the like. The raw resin composition is dissolved in a solvent such as an organic solvent and varnished, and the solvent is removed to form the adhesive layer 3 . Then, the laminated body containing the base material layer 1 and the adhesive layer 2 produced separately is laminated|stacked at normal temperature - 60 degreeC. Thereby, the tape 10 for semiconductor processing in which the adhesive layer 2 and the adhesive layer 3 are laminated|stacked in this order on the base material layer 1 can be obtained.

<Application of tape for semiconductor processing>

The tape 10 for semiconductor processing can be used, for example, as a dicing tape and a tape for temporarily fixing a substrate and a wafer. Hereinafter, each application will be described.

[Cut crystal sticky tape]

FIGS. 2( a ) to 2 ( f ) and FIG. 3 are cross-sectional views for explaining one embodiment of a method of manufacturing a semiconductor device (semiconductor package) using the tape 10 for semiconductor processing. The manufacturing method of the semiconductor device of the present embodiment includes an attaching step (wafer lamination step) of attaching the adhesive layer 3 of the tape 10 for semiconductor processing to a semiconductor wafer, and a step of attaching the adhesive layer 3 to the semiconductor wafer W and the adhesive layer 3 The dicing step of singulation, the ultraviolet irradiation step of irradiating the adhesive layer 2 with ultraviolet rays, the pickup step of picking up the semiconductor element 50 attached to the adhesive layer 3 from the base material layer 1 , and the bonding layer 3 The semiconductor element 50 is bonded to the semiconductor element Next step on the support substrate 60 for mounting. Hereinafter, each step will be described with reference to the drawings.

(Attach step)

First, the tape 10 for semiconductor processing is arranged on a predetermined apparatus. Next, as shown in FIGS. 2( a ) and 2 ( b ), the semiconductor processing tape 10 is attached to the semiconductor wafer W so that the adhesive layer 3 is in contact with one surface Ws of the semiconductor wafer W. The circuit surface Wc of the semiconductor wafer W is preferably a surface on the opposite side of the surface Ws.

(cutting step)

Next, as shown in FIG. 2( c ), the semiconductor wafer W, the adhesive layer 2 and the adhesive layer 3 are diced. At this time, the base material layer 1 may be cut in the middle. In this way, the tape 10 for semiconductor processing can also function as a dicing sheet.

(Ultraviolet irradiation step)

Next, as shown in FIG. 2( d ), when the adhesive layer 2 is of UV type, ultraviolet rays are irradiated to the adhesive layer 2 to harden the adhesive layer 2 , so that the adhesive layer 2 and the adhesive layer 3 are bonded together. force is reduced. The wavelength of the ultraviolet rays to be irradiated is preferably 200 nm to 400 nm, and as the irradiation conditions, it is preferable to irradiate with an irradiation amount of 200 mJ to 500 mJ at an illuminance of 30 mW/cm ² to 240 mW/cm ² .

(picking step)

After irradiation with ultraviolet rays, as shown in FIG. 2( e ), the base material layer 1 is expanded, whereby the respective semiconductor elements 50 obtained by cutting are separated from each other, and the suction chuck 44 is used for suction. Then, the semiconductor element 50 with the bonding layer pushed up by the ejector pins 42 from the bonding layer 3 side is picked up. In addition, the semiconductor element 50 with an adhesive layer has the semiconductor element Wa and the adhesive layer 3a. In addition, the semiconductor element Wa is obtained by dividing the semiconductor wafer W, and the adhesive layer 3 a is obtained by dividing the adhesive layer 3 . In the pick-up step, the expansion may not necessarily be performed, but the pick-up performance can be further improved by expanding.

In addition, the lifting amount of the ejector pin 42 can be selected as required. Furthermore, from the viewpoint of ensuring sufficient pick-up properties also for ultra-thin wafers, for example, a two-stage or three-stage pick-up method may be performed. In addition, the pickup of the semiconductor element 50 may be performed by a method other than the suction chuck 44 .

(Next step)

After picking up the semiconductor element 50 with the adhesive layer, as shown in FIG. 2( f ), the semiconductor element 50 with the adhesive layer is attached to the semi-conductor through the adhesive layer 3 a by thermocompression bonding. On the support substrate 60 for mounting the conductor element. After the semiconductor element 50 with an adhesive layer is mounted on the support substrate 60 via the adhesive layer 3a, the semiconductor element 50 with an adhesive layer may be bonded to the semiconductor element Wa via the adhesive layer 3a again by thermocompression bonding. Thereby, the plurality of semiconductor elements Wa can be mounted on the support substrate 60 more reliably.

Then, as shown in FIG. 3 , it is preferable to electrically connect the semiconductor element Wa and the support substrate 60 by using wire bonding wires 70 as necessary. At this time, the semiconductor element Wa, the adhesive layer 3a, and the support substrate 60 are heated, for example, at 170° C. for about 15 minutes to 60 minutes. Furthermore, after connecting by wire bonding, the semiconductor element Wa may be resin-sealed as necessary. The resin sealing material 80 may be formed on the surface 60a of the support substrate 60, and on the other hand, the solder balls 90 may be formed on the surface on the opposite side of the surface 60a of the support substrate 60 as a connection with the external substrate (mother board). )) for electrical connection purposes.

Furthermore, when resin sealing is performed, the adhesive layer 3a is preferably in a semi-hardened state. Thereby, when resin sealing, the adhesive layer 3a can be filled in the uneven|corrugated recessed part formed in the surface 60a of the support substrate 60 more favorably. The semi-hardened state refers to a state in which the adhesive layer 3a is not completely hardened. The adhesive layer 3a in the semi-hardened state can be finally heat-hardened by one or more heat treatments in the manufacturing process of the semiconductor device.

By going through the above steps, the semiconductor device 100 can be manufactured using the tape 10 for semiconductor processing.

[Temporary fixing belt]

The tape 10 for semiconductor processing can be used to temporarily fix the substrate S on one surface of the adhesive layer 3 during the manufacturing process of the semiconductor device, and to peel off the semiconductor wafer after the base material layer 1 and the adhesive layer 2 are peeled off. W is temporarily fixed to the other surface of the adhesive layer 3 .

FIGS. 4( a ) to 4 ( f ) are cross-sectional views showing steps of manufacturing a semiconductor device using the tape 10 for semiconductor processing as the tape for temporary fixing. When the tape 10 for semiconductor processing is used as the tape for temporary fixing, none of the base material layer 1 , the adhesive layer 2 , and the adhesive layer 3 remains on the semiconductor device finally produced (see FIG. 4( f )).

As shown in FIG.4(a), the tape 10 for semiconductor processing is stuck on the board|substrate S so that the adhesive layer 3 may contact the surface of the board|substrate S. The temperature at this time should just be about 50 degreeC - 90 degreeC. By bonding the substrate S and the tape 10 for semiconductor processing under this temperature condition, the adhesive force between the adhesive layer 3 and the substrate S can be made larger than the adhesive force between the adhesive layer 3 and the adhesive layer 2 .

That is, the substrate S is used to control the adhesiveness of the adhesive layer 3 in a state where the adhesive layer 3 is bonded. In addition, the adhesive layer 3 in the state stuck to the board|substrate S is a layer which controls adhesiveness by applying heat, and has predetermined heat resistance.

From the state shown in FIG.4(a), the base material layer 1 and the adhesive layer 2 are peeled, and the laminated body 20 containing the board|substrate S and the adhesive layer 3 can be obtained as shown to FIG.4(b). Next, the semiconductor wafer W is attached on the adhesive layer 3 so that the surface Ws of the semiconductor wafer W is in contact with the adhesive layer 3 . In addition, the surface on the opposite side to the surface Ws of the semiconductor wafer W is the circuit surface Wc. Thereby, as shown in FIG. 4( c ), the adhesive layer 3 can be obtained The laminated body 30 of the semiconductor wafer W is bonded to one surface F1 of the substrate S, and is bonded to the other surface F2 of the adhesive layer 3 . The temperature at the time of bonding the adhesive layer 3 and the semiconductor wafer W may be about 50°C to 90°C. By bonding the adhesive layer 3 and the semiconductor wafer W under this temperature condition, the adhesive force between the adhesive layer 3 and the semiconductor wafer W can be made larger than the adhesive force between the adhesive layer 3 and the substrate S .

After necessary processing (eg, dicing) is applied to the semiconductor wafer W in the laminate 30 shown in FIG. 4( c ), the substrate S is peeled off by pick-up. Thereby, the laminated body 40 which consists of the adhesive layer 3a and the semiconductor element Wa shown in FIG.4(d) can be obtained. Next, the semiconductor element Wa is mounted on the support substrate 60 in a state where the circuit surface Wc of the semiconductor element Wa faces the support substrate 60 (see FIG. 4( e )). An adhesive (not shown) may be interposed between the semiconductor element Wa and the support substrate 60 . Then, the adhesive layer 3a is peeled off (refer FIG.4(f)). From the state shown in FIG. 4( f ), the semiconductor element Wa and the support substrate 60 are electrically connected by, for example, a wire bonding wire as necessary, thereby manufacturing a semiconductor device.

[Example]

This invention is demonstrated based on an Example. The present invention is not limited to the following examples.

(production of adhesive film)

As the adhesive, an acrylic copolymer was obtained by a solution polymerization method using the following main monomers and functional group monomers. That is, 2-ethylhexyl acrylate and methyl methacrylate were used as main monomers, and hydroxyethyl acrylate and acrylate were used as functional group monomers. The weight-average molecular weight of the acrylic copolymer is 400,000, glass The glass transition point is -38°C. An adhesive solution prepared by blending 10 parts by mass of a polyfunctional isocyanate crosslinking agent (manufactured by Mitsubishi Chemical Co., Ltd., trade name MITEC NY730A-T) to 100 parts by mass of the acrylic copolymer was prepared. The adhesive agent solution was apply|coated to the surface release process polyethylene terephthalate (thickness 25 micrometers) so that the adhesive agent thickness at the time of drying might be 10 micrometers, and it dried. Furthermore, the polyolefin base material (thickness 100 micrometers) containing polypropylene/vinyl acetate/polypropylene was laminated on the adhesive surface. Thereby, the adhesive film containing an adhesive layer and a polyolefin base material (base material layer) was obtained. The adhesive film was left at room temperature for 2 weeks to fully age.

<Example 1>

(Preparation of Adhesive Varnish)

The following materials were mixed and vacuum degassed, whereby an adhesive varnish was obtained.

Thermoplastic resin: HTR-860P-3 (trade name, manufactured by Nagase Chemtex Co., Ltd., glycidyl group-containing acrylic rubber, molecular weight 1 million, Tg-7°C) 100 parts by mass

． Thermosetting component: YDCN-700-10 (trade name, manufactured by Nippon Steel & Sumitomo Metal Chemical Co., Ltd., o-cresol novolac epoxy resin, epoxy equivalent 210) 20 parts by mass

． Thermosetting component: 80 g of Milex (Milex) XLC-LL (trade name, manufactured by Mitsui Chemicals Co., Ltd., phenol aralkyl resin) 17 parts by mass

. Hardening accelerator: 2PZ-CN (trade name, manufactured by Shikoku Chemical Industry Co., Ltd., imidazole compound) 0.04 parts by mass

. Inorganic filler: 12 parts by mass of Aerosil R972 (trade name, manufactured by Aerosil Co., Ltd., Japan, silicon oxide)

. Silane coupling agent: A-189 (trade name, manufactured by Nippon Unicar Co., Ltd., γ-mercaptopropyltrimethoxysilane) 0.6 parts by mass

. Silane coupling agent: A-1170 (trade name, manufactured by Nippon Unicar Co., Ltd., γ-ureidopropyltriethoxysilane) 1.7 parts by mass

(Production of tape for semiconductor processing)

The adhesive varnish was applied to a surface of 75 μm in thickness. Release-treated polyethylene terephthalate (manufactured by Teijin DuPont Film Co., Ltd., Teijin tetoron film: A) -31) on. Thereby, the adhesive sheet in which the adhesive layer was formed on one surface of the resin film was obtained. By bonding this adhesive sheet to the above-mentioned adhesive film, a tape for semiconductor processing is obtained. Furthermore, the adhesive sheet and the adhesive film are bonded together so that the adhesive layer of the adhesive sheet and the adhesive layer of the adhesive film are in direct contact with each other. By adhering the adhesive layer to the adhesive layer, the adhesive layer formed on the polyethylene terephthalate can be surely reversed to the adhesive layer side.

(Example 2)

A tape for semiconductor processing was obtained in the same manner as in Example 1, except that each material used for the preparation of the adhesive varnish was the formulation shown in Example 2 of Table 1.

(Comparative Example 1)

A tape for semiconductor processing was obtained in the same manner as in Example 1, except that each material used for the preparation of the adhesive varnish was set to the formulation shown in Comparative Example 1 of Table 1. In addition, "EXA-830CRP" in Table 1 is the trade name of the thermosetting resin (bisphenol F-type epoxy resin, epoxy equivalent 170) manufactured by DIC Corporation.

(Comparative Example 2)

A tape for semiconductor processing was obtained in the same manner as in Example 1, except that each material used for the preparation of the adhesive varnish was set to the formulation shown in Comparative Example 2 of Table 1. In addition, "LF-4871" in Table 1 is the trade name of the thermosetting resin (bisphenol F type epoxy resin, epoxy equivalent 118) manufactured by DIC Corporation, "YDF-8170C" It is the trade name of the thermosetting resin (bisphenol F-type epoxy resin, epoxy equivalent 157) manufactured by Nippon Steel & Sumitomo Metal Chemical Co., Ltd. "SC-2050-HLG" is Admatechs (Co., Ltd.) ) is the trade name of the filler manufactured by .

(Comparative Example 3)

A tape for semiconductor processing was obtained in the same manner as in Example 1, except that each material used for the preparation of the adhesive varnish was set to the formulation shown in Comparative Example 3 of Table 1.

(Comparative Example 4)

A tape for semiconductor processing was obtained in the same manner as in Example 1, except that each material used in the preparation of the adhesive varnish was set to the formulation shown in Comparative Example 4 of Table 1.

The tapes for semiconductor processing of Examples and Comparative Examples were evaluated by the following methods.

(1) Shrinkage of adhesive layer

The tapes for semiconductor processing of the examples and the comparative examples were each cut to a size of 100 mm×100 mm. The adhesive film (the adhesive layer and the base material layer) was peeled off from each sample, and polyethylene terephthalate was subjected to surface mold release treatment to make it only the adhesive layer, and this was used as a sample for measurement. The measurement samples of Examples and Comparative Examples were heated and hardened at 130° C. for 1 hour. The size of the sample after the hardening treatment was measured, and the shrinkage rate was calculated by the following formula. In Table 1, the value of shrinkage ratio is less than 2% of the sample as "A" will be set to "B" for samples with 2% or more.

Shrinkage rate (%)=(Sample area after hardening)/(Sample area before hardening)×100

(2) Thermoelastic coefficient of adhesive layer after hardening treatment

The sample after hardening used for the evaluation of the said shrinkage was cut|disconnected by the size of 4 mm x 30 mm, and it was set as the sample for measurement. To this sample, a tensile load was applied using a dynamic viscoelasticity measuring device DVE-V4 (trade name, manufactured by Rheology Co., Ltd.), and the temperature was adjusted to − The measurement is carried out at 50°C to 300°C. Let the elastic coefficient at a temperature of 100°C be the thermoelastic coefficient. In Table 1, the sample whose value of the thermoelastic coefficient is less than 5 MPa is referred to as "A", and the sample whose value is 5 MPa or more is referred to as "B".

(3) 90° peeling force of the adhesive layer with respect to the wafer (evaluation of the adhesion force with respect to the wafer)

The sample after hardening used for the evaluation of the said shrinkage was cut|disconnected by 10 mm width|variety, and it was set as the sample for measurement. The sample for measurement is attached to the surface of the silicon wafer. Then, an adhesive tape (auxiliary tape) was attached to the sample for measurement, and the sample for measurement was torn off from the wafer at an angle of 90° at 50 mm/min. In Table 1, the value of the 90° peeling peeling force was set to "A" for a sample having a value of 15 N/m or more, and a sample of less than 15 N/m was set to "B".

(4) Surface roughness of adhesive layer after peeling

The surface roughness (Tp) of the adhesive layer after the evaluation of the "adhesion force of the adhesive layer with respect to the wafer" (after peeling) was measured using a laser microscope (manufactured by Keyence Corporation). In Table 1, the sample whose surface roughness (Tp) value is 30 or less is designated as "A", and the sample whose surface roughness (Tp) is more than 30 is designated as "B".

[Industrial Availability]

According to the present invention, a tape for semiconductor processing having excellent versatility in a semiconductor manufacturing process is provided.

1: substrate layer

2: Adhesive layer

3: Next layer

10: Tape for semiconductor processing

Claims (7)

A use of a tape for semiconductor processing, which is a tape for temporary fixing, wherein the tape for semiconductor processing is a tape for semiconductor processing in which a base material layer, an adhesive layer, and a thermosetting adhesive layer are laminated in this order, and After curing treatment at 130° C. for 1 hour, the shrinkage rate of the adhesive layer is less than 2%, and the thermoelastic coefficient of the adhesive layer is less than 5MPa, the base material layer, the adhesive layer and the adhesive layer Neither will remain on the final manufactured semiconductor device. The use of the tape for semiconductor processing according to claim 1, wherein the peeling force of the adhesive layer with respect to the wafer after curing at 130° C. for 1 hour is 15 N/m or more. The use of the tape for semiconductor processing according to claim 1 or claim 2 of the scope of the application for temporarily fixing a substrate to one surface of the adhesive layer in a manufacturing process of a semiconductor device, and for use in After peeling off the base material layer and the adhesive layer, the wafer is temporarily fixed on the other side of the adhesive layer. The use of the tape for semiconductor processing according to claim 1 or claim 2, wherein the adhesive layer contains a thermoplastic resin, a thermosetting resin, a hardening accelerator, and a filler, and the adhesive layer in the adhesive layer is When the content of the thermoplastic resin is 100 parts by mass, the content of the thermosetting resin in the adhesive layer is 1 part by mass to 40 parts by mass. The use of the tape for semiconductor processing according to claim 4, wherein the content of the filler in the adhesive layer when the content of the thermoplastic resin in the adhesive layer is 100 parts by mass It is 1 mass part - 330 mass parts. The use of the tape for semiconductor processing according to claim 1 or claim 2, wherein the adhesive layer is formed of a non-ultraviolet type adhesive. A method of manufacturing a semiconductor device, which is a method of manufacturing a semiconductor device using a tape for semiconductor processing as a tape for temporary fixing, the tape for semiconductor processing having a substrate layer, an adhesive layer, and a thermosetting tape laminated in this order. A tape for semiconductor processing of an adhesive layer, the shrinkage of the adhesive layer is less than 2% and the thermoelastic coefficient of the adhesive layer is less than 5MPa after curing treatment at 130° C. for 1 hour, and the manufacturing of the semiconductor device The method includes the steps of attaching the semiconductor processing tape to the substrate in such a manner that the adhesive layer is in contact with the surface of the substrate, peeling off the base material layer and the adhesive layer, and attaching the semiconductor wafer to the substrate. The step of attaching the semiconductor wafer to the adhesive layer in such a way that one side of the circle is in contact with the adhesive layer, the step of applying processing to the semiconductor wafer, and the step of peeling off the substrate by picking up, in The step of mounting on the support substrate in a state where the circuit surface, which is the surface opposite to one surface of the semiconductor wafer, faces the support substrate, and the step of peeling off the adhesive layer.

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