KR20200014292A - Semiconductor Processing Tape - Google Patents

Abstract

In the tape for semiconductor processing which concerns on this invention, the base material layer, the adhesion layer, and the adhesive layer which has thermosetting are laminated | stacked in this order, and after 1-hour hardening process is carried out at 130 degreeC, the shrinkage rate of an adhesive layer is It is less than 2% and the hot time elastic modulus of an adhesive layer is less than 5 Mpa. This semiconductor processing tape can be used as a dicing die-bonding tape, for example, can also be used as a temporary fixing tape in the manufacturing process of a semiconductor device.

Description

Semiconductor Processing Tape

The present invention relates to a tape for semiconductor processing.

In recent years, the demand for miniaturization, light weight, and high functionality of electronic devices is increasing. In response to these demands, miniaturization, thinning, and high-density packaging are required for semiconductor devices constituting electronic devices.

A semiconductor device is manufactured through the sealing process which seals the semiconductor chip fixed to the board | substrate, glass, or a temporary fixing material with resin, the dicing process which separates the sealed semiconductor chip as needed, etc. In the manufacturing process, a step of polishing the wafer may be performed.

These processes are often performed in the state which covered the chip | tip, board | substrate, etc. with the protective tape. The protective tape is usually attached to the surface to be protected before the specific processing step and peeled off after the processing step.

Patent document 1 discloses the heat-resistant adhesive sheet for semiconductor manufacture used for manufacture of the substrateless semiconductor package which does not use a metal lead frame, the adhesive used for the said sheet, and the manufacturing method of the semiconductor device using the said sheet | seat.

Patent Document 1: Japanese Patent Application Laid-Open No. 2011-129649

MEANS TO SOLVE THE PROBLEM In the manufacturing process of a semiconductor device, this inventor examined conventionally using the dicing die bonding tape used as a temporary fixing tape required by various processes. When one kind of tape is applicable to both the dicing die-bonding tape and the temporary fixing tape, the versatility of a tape becomes high and it becomes possible to manufacture a semiconductor device efficiently.

Heat resistance is mentioned as one of the characteristics which the tape (henceforth "the semiconductor processing tape") applicable to the various process in the manufacturing process of a semiconductor device should have. According to the examination of the present inventors, since the adhesive layer in the adhesive sheet of patent document 1 contains a rubber component as a main component, there existed room for improvement by the point that heat resistance is not enough.

As another characteristic which the tape for semiconductor processing should provide, the outstanding peelability is mentioned. Conventionally, the tape used for temporary fixing is designed so that an adhesive layer may have moderate flexibility from a viewpoint of ensuring moderate peelability.

However, simply providing flexibility to the pressure-sensitive adhesive layer could not necessarily achieve excellent peelability. Specifically, there was a problem that a pool residue was generated during the peeling step.

This invention is made | formed in view of the said subject, and an object of this invention is to provide the tape for a semiconductor process which has the outstanding versatility in a semiconductor manufacturing process.

In the tape for semiconductor processing which concerns on this invention, the base material layer, the adhesion layer, and the adhesive layer which has thermosetting are laminated | stacked in this order, and after 1-hour hardening process is carried out at 130 degreeC, the shrinkage rate of an adhesive layer is It is less than 2%, and the hot visual elasticity modulus of an adhesive layer is less than 5 Mpa. Since the adhesive layer after 1-hour hardening process at 130 degreeC satisfy | fills these conditions, the tape for a semiconductor process can be applied to the various processing process in the manufacturing process of a semiconductor device. Specifically, heat resistance and peelability required in the above various processing steps can be imparted to the adhesive layer.

After 1 hour of curing treatment at 130 ° C, the peeling force of the adhesive layer on the wafer is preferably 15 N / m or more. When the adhesive layer satisfies this requirement, the adhesion to the wafer can be sufficiently secured.

Temporary fixation of a board | substrate and a wafer is mentioned as a use other than the dicing die-bonding tape of the tape for a semiconductor processing which concerns on this invention. That is, the tape for semiconductor processing which concerns on this invention WHEREIN: In a manufacturing process of a semiconductor device, a board | substrate is temporarily fixed to one surface of an adhesive layer, and after peeling a base material layer and an adhesive layer, a wafer is temporarily fixed to the other surface of an adhesive layer. Can be used to For example, as mentioned above, when using the tape for a semiconductor process for the purpose of temporary fixation, a base material layer, an adhesion layer, and an adhesive layer do not remain in the semiconductor device finally manufactured.

It is preferable that the said contact bonding layer contains a thermoplastic resin, a thermosetting resin, a hardening accelerator, and a filler. In this case, 1-40 mass parts is preferable for content of the thermosetting resin in an adhesive layer when content of the thermoplastic resin in an adhesive layer is 100 mass parts. Moreover, as for content of the filler in an adhesive layer, when content of the thermoplastic resin in an adhesive layer is 100 mass parts, 1-330 mass parts is preferable.

The adhesive layer which satisfies these requirements can be more stably improved in heat resistance and peelability in various processing steps in the manufacturing process of the semiconductor device.

The adhesive layer may be UV type or non-UV type.

According to the present invention, a tape for semiconductor processing having excellent versatility in a semiconductor manufacturing process is provided.

BRIEF DESCRIPTION OF THE DRAWINGS It is sectional drawing which shows typically one Embodiment of the tape for a semiconductor process of this invention.
2 (a) to 2 (f) are cross-sectional views schematically showing a process of manufacturing a semiconductor device using the semiconductor processing tape shown in FIG. 1 as a dicing die bonding tape.
FIG. 3 is a cross-sectional view schematically showing an example of a semiconductor device manufactured using the semiconductor processing tape shown in FIG. 1.
4 (a) to 4 (f) are cross-sectional views schematically showing a process of manufacturing a semiconductor device using the semiconductor processing tape shown in FIG. 1 as a temporary fixing tape.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described, referring drawings suitably. In addition, this invention is not limited to the following embodiment. In this specification, (meth) acryl means an acryl or methacryl.

<Semiconductor processing tape>

1: is sectional drawing which shows typically the tape for a semiconductor processing which concerns on this embodiment. In the tape 10 for semiconductor processing shown in the figure, the base material layer 1, the adhesion layer 2, and the adhesive layer 3 which has thermosetting are laminated | stacked in this order. The tape 10 for semiconductor processing is applicable to both uses of a dicing die-bonding tape and a temporary fixing tape in the manufacturing process of a semiconductor device. In order to realize this, the tape 10 for semiconductor processing has a shrinkage of the adhesive layer 3 of less than 2% after being cured at 130 ° C. for 1 hour, and a thermal elastic modulus of the adhesive layer 3 of 5 MPa. Is less than. The adhesive layer 3 after having been cured for 1 hour at 130 ° C satisfies these conditions, so that the tape 10 for semiconductor processing requires heat resistance and peelability required in various processing steps in the manufacturing process of the semiconductor device. Can be given to the adhesive layer 3.

As mentioned above, after 1-hour hardening process is performed at 130 degreeC, the shrinkage rate of the contact bonding layer 3 is less than 2%. This value is preferably 1.8% or less, and more preferably 1.6% or less. When this value is less than 2%, in the manufacturing process of the semiconductor device, even if heat is applied to the adhesive layer 3 in a state where the wafer or substrate is temporarily fixed with respect to the adhesive layer 3, the position shift can be sufficiently suppressed.

Shrinkage rate of the contact bonding layer 3 can be calculated | required as follows. The sample 10 which consists only of the contact bonding layer 3 is prepared by cutting the tape 10 for semiconductor processing to predetermined size (for example, 100 mm x 100 mm), and peeling the base material layer 1 and the adhesion layer 2 from this. It heats and hardens this at 130 degreeC for 1 hour, and measures the size of the sample after hardening process. The shrinkage rate is calculated by substituting the sample area before thermosetting and the sample area after thermosetting in the following equation.

Shrinkage (%) = (sample area after curing) / (sample area before curing) x 100

As mentioned above, after 1-hour hardening process is performed at 130 degreeC, the thermal elasticity modulus of the contact bonding layer 3 is less than 5 Mpa. 4.5 MPa or less is preferable and 4 MPa or less of this value is more preferable. Since the value is less than 5 MPa, in the manufacturing process of the semiconductor device, even if heat is applied to the adhesive layer 3 in a state where the wafer or substrate is temporarily fixed to the adhesive layer 3, the adhesive layer 3 provides adequate flexibility. In this way, excellent peelability can be realized. On the other hand, the lower limit of the thermal modulus of elasticity of the adhesive layer 3 is 1 MPa, for example.

The thermal elastic modulus of the adhesive layer 3 can be calculated | required as follows. The sample which consists only of the contact bonding layer 3 is prepared by cutting the tape 10 for semiconductor processing to predetermined size, and peeling the base material layer 1 and the adhesion layer 2 from this. This is hardened by heating at 130 degreeC for 1 hour. The sample is obtained by cutting the contact bonding layer 3 after the hardening process obtained in this way to predetermined size (for example, 4 mm x 30 mm). This sample is measured using a dynamic viscoelasticity measuring device. That is, a tensile load is applied to the sample and measured from -50 ° C to 300 ° C under conditions of a frequency of 10 Hz and a temperature increase rate of 10 ° C / min. The elasticity modulus of temperature 100 degreeC is made into thermal elasticity modulus.

From the viewpoint of sufficiently securing the adhesion of the adhesive layer 3 to the wafer, after the curing treatment at 130 ° C. for 1 hour, the peeling force of the adhesive layer 3 to the wafer is preferably 15 N / m or more. , 20-200 N / m is more preferable, and 25-150 N / m is still more preferable.

It is preferable that the contact bonding layer 3 contains a thermoplastic resin, a thermosetting resin, a hardening accelerator, and a filler. When content of the thermoplastic resin in the contact bonding layer 3 is 100 mass parts, 1-40 mass parts is preferable, as for content of the thermosetting resin in the contact bonding layer 3, 5-39 mass parts is more preferable, 10-38 The mass part is more preferable. 0.01-3 mass parts is preferable, as for content of the hardening accelerator in the contact bonding layer 3, 0.02-2 mass parts is more preferable, 0.03-1 mass part is more preferable. 1-330 mass parts is preferable, as for content of the filler in the contact bonding layer 3, 1-300 mass parts is more preferable, 5-200 mass parts is more preferable, 10-100 mass parts is especially preferable. The adhesive layer 3 which satisfies these requirements can more stably improve the heat resistance and peelability required in various processing steps in the manufacturing process of the semiconductor device.

It is preferable that the contact bonding layer 3 and the adhesion layer 2 are fully in contact so that peeling does not generate | occur | produce at the time of a process process. The adhesive force of the contact bonding layer 3 and the adhesion layer 2 can be evaluated by both T-shaped peeling strength. 15 N / m or more is preferable and, as for T-shaped peeling strength (peel rate: 50 mm / min) of the contact bonding layer 3 and the adhesion layer 2, 16-100 N / m is more preferable. T-shaped peeling strength is performed by the following method. After bonding the adhesive layer 3 and the adhesive layer 2 with a laminator, a sample for measurement is prepared by inserting a 25 mm wide cut. At this time, when using a UV irradiation type adhesive, UV irradiation is performed suitably. Peeling rate is measured at 50 mm / min.

Hereinafter, the adhesive layer 3, the adhesion layer 2, and the base material layer 1 which comprise the tape 10 for a semiconductor process are demonstrated.

[Adhesive layer]

As mentioned above, it is preferable that the contact bonding layer 3 contains a thermoplastic resin, a thermosetting resin, a hardening accelerator, and a filler.

(Thermoplastic)

As the thermoplastic resin, a resin having thermoplasticity or a resin having a thermoplastic in at least an uncured state and forming a crosslinked structure after heating can be used. As the thermoplastic resin, a (meth) acrylic copolymer (hereinafter sometimes referred to as a "reactive group-containing (meth) acryl copolymer") having a reactive group is a viewpoint of excellent shrinkage, heat resistance and peelability as a tape for semiconductor processing. desirable.

As a thermoplastic resin, when the reactive group containing (meth) acryl copolymer is included, the adhesive layer 3 may be an aspect which does not contain a thermosetting resin. That is, the aspect containing a reactive group containing (meth) acryl copolymer, a hardening accelerator, and a filler may be sufficient.

A thermoplastic resin can be used individually by 1 type or in combination of 2 or more types.

As a (meth) acryl copolymer, (meth) acrylic acid ester copolymers, such as an acrylic glass and an acrylic rubber, etc. are mentioned, An acrylic rubber is preferable. It is preferable that acrylic rubber has acrylic ester as a main component and is formed by copolymerization of the monomer chosen from (meth) acrylic acid ester and acrylonitrile.

As the (meth) acrylic acid ester, methyl acrylate, ethyl acrylate, propyl acrylate, isopropyl acrylate, butyl acrylate, isobutyl acrylate, hexyl acrylate, cyclohexyl acrylate, 2-ethylhexyl acrylate, Uryl acrylate, methyl methacrylate, ethyl methacrylate, propyl methacrylate, isopropyl acrylate, butyl methacrylate, isobutyl methacrylate, hexyl methacrylate, cyclohexyl methacrylate, 2-ethylhexyl Methacrylate, lauryl methacrylate, and the like.

As a (meth) acrylic acid ester copolymer, the copolymer containing butyl acrylate and acrylonitrile as a copolymerization component, and the copolymer containing ethyl acrylate and acrylonitrile as a copolymerization component are preferable.

It is preferable that a reactive group containing (meth) acryl copolymer is a reactive group containing (meth) acryl copolymer which contains the (meth) acryl monomer which has a reactive group as a copolymerization component. Such a reactive group containing (meth) acryl copolymer can be obtained by copolymerizing the (meth) acryl monomer which has a reactive group, and the monomer composition containing said monomer.

As a reactive group, an epoxy group, a carboxyl group, an acryloyl group, a methacryloyl group, a hydroxyl group, an episulfide group is preferable from a viewpoint of heat resistance improvement, Especially, an epoxy group and a carboxyl group are more preferable at a crosslinking point.

In this embodiment, it is preferable that a reactive group containing (meth) acryl copolymer is an epoxy group containing (meth) acryl copolymer which contains the (meth) acryl monomer which has an epoxy group as a copolymerization component. In this case, as a (meth) acryl monomer which has an epoxy group, glycidyl acrylate, 4-hydroxybutyl acrylate glycidyl ether, 3, 4- epoxycyclohexyl methyl acrylate, glycidyl methacrylate, 4 -Hydroxybutyl methacrylate glycidyl ether, 3,4-epoxycyclohexylmethyl methacrylate, and the like. As for the (meth) acryl monomer which has a reactive group, glycidyl acrylate and glycidyl methacrylate are preferable from a heat resistant viewpoint.

It is preferable that Tg of a thermoplastic resin is -50 degreeC-50 degreeC. When Tg of a thermoplastic resin is 50 degrees C or less, the softness of the contact bonding layer 3 is easy to be ensured. Moreover, when an unevenness | corrugation exists at the time of adhering to a to-be-adhered body, it becomes easy to follow and has moderate adhesiveness. On the other hand, when Tg of a thermoplastic resin is -50 degreeC or more, it is easy to suppress that the flexibility of the contact bonding layer 3 becomes too high, and the outstanding handleability, adhesiveness, and peelability can be achieved.

Tg of a thermoplastic resin is a midpoint glass transition temperature value obtained by differential scanning calorimetry (DSC). Specifically, Tg of the thermoplastic resin specifically measures the calorie change under conditions of a temperature increase rate of 10 ° C./min and a measurement temperature of −80 to 80 ° C., and the intermediate point glass calculated by the method according to JIS K 7121: 1987. Transition temperature.

It is preferable that the weight average molecular weights of a thermoplastic resin are 100,000 or more and 2 million or less. When the weight average molecular weight is 100,000 or more, it is easy to ensure heat resistance when used for the purpose of temporary fixing. On the other hand, when the weight average molecular weight is 2 million or less, it is easy to suppress the fall of flow and the fall of adhesiveness when using it for the use of temporary fixation. From the above point of view, the weight average molecular weight of the thermoplastic resin is more preferably 500,000 or more and 2 million or less, and further preferably 1 million or more and 2 million or less. In addition, a weight average molecular weight is a polystyrene conversion value using the analytical curve by standard polystyrene by gel permeation chromatography method (GPC).

When the (meth) acrylic copolymer having a reactive group contains glycidyl acrylate or glycidyl methacrylate as a copolymerization component, their content is 0.1 to 20% by mass based on the total copolymerization component total. It is preferable that it is, It is more preferable that it is 0.5-15 mass%, It is further more preferable that it is 1.0-10 mass%. If content is in the said range, the softness | flexibility, adhesiveness, and peelability of the contact bonding layer 3 can be made compatible at a higher level.

As a (meth) acryl copolymer which has a reactive group as mentioned above, you may use what is obtained by superposition | polymerization methods, such as pearl polymerization and solution polymerization. Alternatively, commercially available products such as HTR-860P-3CSP (trade name, manufactured by Nagase Chemtex Co., Ltd.) may be used.

(Thermosetting resin)

As thermosetting resin, if it is resin hardened | cured by heat, it can use without a restriction | limiting in particular. As a thermosetting resin, an epoxy resin, an acrylic resin, a silicone resin, a phenol resin, a thermosetting polyimide resin, a polyurethane resin, a melamine resin, a urea resin, etc. are mentioned. These can be used individually by 1 type or in combination of 2 or more types.

An epoxy resin will not be specifically limited if it hardens | cures and has a heat-resistant effect. As an epoxy resin, novolak-type epoxy resins, such as bifunctional epoxy resins, such as a bisphenol-A epoxy, a phenol novolak-type epoxy resin, and a cresol novolak-type epoxy resin, etc. can be used. The epoxy resin can also use conventionally well-known things, such as a polyfunctional epoxy resin, a glycidyl amine type epoxy resin, a heterocyclic containing epoxy resin, and an alicyclic epoxy resin.

As bisphenol A type epoxy resin, Epicoat 807, Epicoat 815, Epicoat 825, Epicoat 827, Epicoat 828, Epicoat 834, Epicoat 1001, Epicoat 1004, Epicoat 1007, Epicoat 1009 (all Mitsubishi Chemical Co., Ltd., DER-330, DER-301, DER-361 (all are the Dow Chemical Company make), YD8125, YDF8170 (all are the Toto Kasei Co., Ltd. product), etc. are mentioned.

As a phenol novolak-type epoxy resin, Epicoat 152, Epicoat 154 (all are manufactured by Mitsubishi Chemical Corporation), EPPN-201 (made by Nippon Kayaku Co., Ltd.), DEN-438 (made by Dow Chemical Co., Ltd.), etc. are mentioned. Can be.

As o-cresol novolak-type epoxy resin, YDCN-700-10 (made by Shinnitetsu Sumin Chemical Co., Ltd.), EOCN-102S, EOCN-103S, EOCN-104S, EOCN-1012, EOCN-1025, EOCN- 1027 (all are manufactured by Nippon Kayaku Co., Ltd.), YDCN701, YDCN702, YDCN703, YDCN704 (all are manufactured by Toto Kasei Co., Ltd.), etc. are mentioned.

As a polyfunctional epoxy resin, Epon 1031S (made by Mitsubishi Chemical Co., Ltd.), Araldite 0163 (made by BASF Japan), Denacol EX-611, EX-614, EX-614B, EX-622, EX-512, EX-521, EX-421, EX-411, EX-321 (all are manufactured by Nagase Chemtex Co., Ltd.), etc. are mentioned.

As an amine type epoxy resin, Epicoat 604 (made by Mitsubishi Chemical Corporation), YH-434 (made by Toto Kasei Co., Ltd.), TETRAD-X, TETRAD-C (all manufactured by Mitsubishi Gas Chemical Co., Ltd.), ELM -120 (made by Sumitomo Kagaku Co., Ltd.) etc. are mentioned.

Examples of the heterocyclic-containing epoxy resin include araldite PT810 (manufactured by BASF Japan), ERL4234, ERL4299, ERL4221, and ERL4206 (all manufactured by Union Carbide). These epoxy resins can be used individually by 1 type or in combination of 2 or more types.

As an epoxy resin hardening | curing agent which is a part of thermosetting resin component, well-known resin normally used can be used. Specifically, bisphenols, phenol novolac resins, bisphenols having two or more phenolic hydroxyl groups in one molecule such as amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, bisphenol A, bisphenol F, and bisphenol S A phenol resin, such as A novolak resin and a cresol novolak resin, etc. are mentioned. Especially as an epoxy resin hardening | curing agent, phenol resins, such as a phenol novolak resin, bisphenol A novolak resin, and a cresol novolak resin, are preferable from a viewpoint of being excellent in corrosion resistance at the time of moisture absorption.

In addition, an epoxy hardening | curing agent may be used simultaneously with an epoxy resin, and may be used independently.

Among the said phenol resin hardeners, phenolite LF2882, phenolite LF2822, phenolite TD-2090, phenolite TD-2149, phenolite VH-4150, phenolite VH4170 (all DIC Corporation make, brand name), H-1 ( Meiwa Kasei Co., Ltd. product, brand name), Epicure MP402FPY, Epicure YL6065, Epicure YLH129B65, Mirex XL, Mirex XLC, Mirex XLC-LL, Mirex RN, Mirex RS, Mirex It is preferable to use VR (all Mitsubishi Chemical Corporation make, brand name).

(Hardening accelerator)

Examples of the curing accelerator include imidazoles, dicyandiamide derivatives, dicarboxylic acid dihydrazides, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, 1, 8-diazabicyclo [5,4,0] undecene-7-tetraphenylborate and the like. These can be used individually by 1 type or in combination of 2 or more types.

When the adhesive layer 3 contains the (meth) acryl copolymer which has an epoxy group, it is preferable to contain the hardening accelerator which accelerates hardening of the epoxy group contained in such an acrylic copolymer. As a hardening accelerator which accelerates hardening of an epoxy group, a phenol type hardening | curing agent, an acid anhydride type hardening | curing agent, an amine type hardening | curing agent, an imidazole type hardening | curing agent, an imidazoline type hardening | curing agent, a triazine type hardening | curing agent, and a phosphine type hardening | curing agent are mentioned. Among these, it is preferable that it is an imidazole series hardening | curing agent which can expect shortening of process time and improvement of workability from a viewpoint of fast hardening property, heat resistance, and peelability. These compounds can be used individually by 1 type or in combination of 2 or more type.

As for content of the hardening accelerator in the contact bonding layer 3, 0.02-20 mass parts is preferable with respect to 100 mass parts of thermoplastic resins, 0.025-10 mass parts is more preferable, 0.025-3 mass parts is more preferable, 0.025-0.05 Is particularly preferred. When content of a hardening accelerator exists in the said range, there exists a tendency which can fully suppress the fall of storage stability, improving the hardenability of the contact bonding layer 3.

(Weapon filler)

An inorganic filler can be mix | blended with the contact bonding layer 3. Examples of the inorganic fillers include metal fillers such as silver powder, gold powder and copper powder, and nonmetal inorganic fillers such as silica, alumina, boron nitride, titania, glass, iron oxide, and ceramics. The inorganic filler can be selected according to the desired function.

It is preferable that the said inorganic filler has organic group on the surface. By modifying the surface of the inorganic filler with an organic group, the dispersibility in the organic solvent when preparing the varnish for forming the adhesive layer 3 and the shrinkage of the adhesive layer 3 can be suppressed, thereby improving the elastic modulus. It becomes easy to improve peelability.

The inorganic filler which has an organic group on a surface can be obtained by mixing the silane coupling agent and inorganic filler represented by following formula (B-1), for example, and stirring at the temperature of 30 degreeC or more. It is possible to confirm that the surface of the inorganic filler was modified with an organic group by UV measurement, IR measurement, XPS measurement, or the like.

In the formula (B-1), X represents an organic group selected from the group consisting of a phenyl group, glycidoxy group, acryloyl group, methacryloyl group, mercapto group, amino group, vinyl group, isocyanate group and methacryloxy group. and s represent an integer of 0 or 1 to 10, and R ¹¹ , R ¹² and R ¹³ each independently represent an alkyl group having 1 to 10 carbon atoms.

Examples of the alkyl group having 1 to 10 carbon atoms include methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, heptyl group, octyl group, nonyl group, decyl group, isopropyl group and isobutyl group.

The alkyl group having 1 to 10 carbon atoms is preferably a methyl group, an ethyl group and a pentyl group from the viewpoint of availability. From the viewpoint of heat resistance, X is preferably an amino group, a glycidoxy group, a mercapto group and an isocyanate group, and more preferably a glycidoxy group and a mercapto group. 0-5 are preferable and 0-4 are more preferable from the viewpoint of suppressing the film fluidity at the time of high heat, and improving heat resistance in s in Formula (B-1).

Examples of the silane coupling agent include trimethoxyphenylsilane, dimethyldimethoxyphenylsilane, triethoxyphenylsilane, dimethoxymethylphenylsilane, vinyltrimethoxysilane, vinyltriethoxysilane, and vinyltris (2-methoxyethoxy). Silane, N- (2-aminoethyl) -3-aminopropylmethyldimethoxysilane, N- (2-aminoethyl) -3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-amino Propyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-isocyanatepropyltri Ethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, N- (1,3-dimethylbutylidene) -3- (Triethoxysilyl) -1-propanamine, N, N'-bis (3- (trimethoxysilyl) propyl) ethylenediamine, polyoxyethyl A propyl trialkoxy silane, polyester and the like ethoxy dimethylsiloxane.

Among these, 3-aminopropyltriethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-isocyanatepropyltriethoxysilane, and 3-mercaptopropyltrimethoxysilane are preferable, and trimethoxyphenylsilane , 3-glycidoxypropyltrimethoxysilane and 3-mercaptopropyltrimethoxysilane are more preferable. A silane coupling agent can be used individually by 1 type or in combination of 2 or more types.

As for content of the said coupling agent, 0.01-50 mass parts is preferable with respect to 100 mass parts of inorganic fillers from a viewpoint of achieving the balance of heat resistance and storage stability, 0.05 mass part-20 mass parts are more preferable, and a viewpoint of heat resistance improvement , 0.5 to 10 parts by mass is more preferable.

330 mass parts or less are preferable with respect to 100 mass parts of thermoplastic resins, as for content of the inorganic filler in the contact bonding layer 3, 180 mass parts or less are more preferable, and its 100 mass parts or less are more preferable. Although there is no restriction | limiting in particular in the minimum of content of an inorganic filler, It is preferable that it is 1 mass part or more with respect to 100 mass parts of thermoplastic resins, It is more preferable that it is 5 mass parts or more, It is further more preferable that it is 8 mass parts or more. By making content of an inorganic filler into the said range, shrinkage | contraction property of the contact bonding layer 3 can be suppressed, an elasticity modulus can be improved, and peelability becomes easy.

(Organic filler)

The organic filler can be mix | blended with the contact bonding layer 3. Examples of the organic filler include carbon, rubber fillers, silicon fine particles, polyamide fine particles, polyimide fine particles, and the like. 300 mass parts or less are preferable with respect to 100 mass parts of thermoplastic resins, as for content of an organic filler, 200 mass parts or less are more preferable, and its 100 mass parts or less are still more preferable. Although the minimum in particular of content of an organic filler does not have a restriction | limiting, It is preferable that it is 5 mass parts or more with respect to 100 mass parts of thermoplastic resins.

(Organic solvent)

You may dilute the contact bonding layer 3 using the organic solvent further as needed. The organic solvent is not particularly limited, but can be determined in consideration of volatility and the like at the time of film forming. Specifically, relatively low boiling point solvents such as methanol, ethanol, 2-methoxyethanol, 2-ethoxyethanol, 2-butoxyethanol, methyl ethyl ketone, acetone, methyl isobutyl ketone, toluene, and xylene are used for film formation. It is preferable from the viewpoint that the curing of the film is unlikely to proceed. Moreover, for the purpose of improving film forming property, it is preferable to use a relatively high boiling point solvent such as dimethylacetamide, dimethylformamide, N-methylpyrrolidone, cyclohexanone, and the like. These solvents can be used individually by 1 type or in combination of 2 or more type.

[Adhesive layer]

As the adhesion layer 2, it is desirable to have adhesive force at room temperature, and to have adhesive force with respect to the adhesion layer 3. The adhesive layer 2 may be a UV type (hardened by high energy rays such as ultraviolet rays or radiation) or a non-UV type (hardened by heat).

When using a UV adhesive, it is preferable that an adhesive which forms the adhesion layer 2 contains an acryl-type copolymer, a crosslinking agent, and a photoinitiator.

In the case of using a non-UV adhesive, at least one functional group selected from an epoxy group, an isocyanate group, an aziridine group and a melanin group is used as a crosslinking agent to react with the base resin and a functional group of the base resin by a crosslinking reaction for adjusting the adhesive force. It is preferred to have These crosslinking agents may be used independently and may use 2 or more types together.

Examples of the base resin include acrylic resins, various synthetic rubbers, natural rubbers, and polyimide resins. From the viewpoint that the pressure-sensitive adhesive is hard to remain, the base resin preferably has a functional group capable of reacting with other additives such as a hydroxyl group, a carboxyl group and the like.

In addition, when the reaction rate is slow, a catalyst such as amine or tin can be appropriately used. In order to adjust adhesive characteristics, you may contain arbitrary components, such as a tackifier, such as rosin system and terpene resin system, and various surfactant, so that it may not affect the effect of this invention.

1-100 micrometers is preferable, as for the thickness of the adhesion layer 2, 2-50 micrometers is more preferable, and its 5-40 micrometers are more preferable. When the thickness of the adhesive layer 2 is thinner than 1 micrometer, it becomes difficult to ensure sufficient adhesive force with an adhesive layer, and there exists a possibility that processing may be difficult, while thicker than 100 micrometers is uneconomical and there is no characteristic advantage.

[Base layer]

As the base material layer 1, a known polymer sheet or tape can be used. As specific examples, polyolefins such as crystalline polypropylene, amorphous polypropylene, high density polyethylene, medium density polyethylene, low density polyethylene, ultra low density polyethylene, low density linear polyethylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymers, Ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyethylene Polyester such as naphthalate, polycarbonate, polyimide, polyether ether ketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylsulfide, aramid (paper), glass, glass cloth, fluorine resin Polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin Can be. You may use the mixture which mixed these with a plasticizer, a silica, an anti blocking material, a slip agent, an antistatic agent.

Among the above, at least 1 sort (s) selected from a polypropylene, a polyethylene- polypropylene random copolymer, a polyethylene- polypropylene block copolymer, an ethylene-vinyl acetate copolymer, an ionomer resin, and an ethylene- (meth) acrylic acid copolymer is a main component. It is preferable that the phosphorus layer is in contact with the adhesive layer. These resins are also preferable from the viewpoints of properties such as Young's modulus, stress relaxation property, melting point, and so on, and in terms of price, recycling of waste materials after use, and also from the viewpoint of surface modification effect by ultraviolet rays.

Although the base material layer 1 may be a single | mono layer, you may have a multilayered structure which laminated | stacked the layer which consists of different materials as needed. As a manufacturing method of such a base material, the base material layer which has a different layer may be made at once by the multilayer extrusion method, the tape made by the inflation method, the single-layer extrusion method is bonded together using an adhesive agent, or is bonded by heat welding, etc. It may be obtained by the technique of. Moreover, in order to control adhesiveness with the adhesion layer 2, you may perform surface roughening processes, such as a mat process and a corona treatment, to the base material layer 1 as needed.

<Method of manufacturing semiconductor processing tape>

The tape 10 for semiconductor processing can be produced by the method described below, for example. That is, first, the varnish-ized thing which melt | dissolved the raw material resin composition of the contact bonding layer 3 in solvents, such as an organic solvent, on the mold release film, the knife coat method, the roll coat method, the spray coat method, the gravure coat method Coating by a bar coating method, a curtain coating method, or the like, and the solvent is removed to form the adhesive layer 3. Then, the laminated body which consists of the base material layer 1 and the adhesion layer 2 produced separately is laminated | stacked at normal temperature-60 degreeC. Thereby, the tape 10 for a semiconductor process by which the adhesion layer 2 and the contact bonding layer 3 were laminated | stacked in this order on the base material layer 1 can be obtained.

<Use of semiconductor processing tape>

The tape 10 for semiconductor processing can be used as a dicing die-bonding tape, for example, and can also be used as a temporary fixing tape of a board | substrate and a wafer. Hereinafter, each use is demonstrated.

[Dicing Die Bonding Tape]

2 (a) to 2 (f) and FIG. 3 are cross-sectional views for explaining an embodiment of a method for manufacturing a semiconductor device (semiconductor package) using the tape 10 for semiconductor processing. In the manufacturing method of the semiconductor device which concerns on this embodiment, the adhesion process (wafer lamination process) which adheres the adhesive layer 3 of the tape 10 for a semiconductor processing to a semiconductor wafer, and the semiconductor wafer W and the adhesion layer 3 are reorganized. A dicing step for converting, an ultraviolet irradiation step for irradiating the ultraviolet ray to the adhesive layer 2, a pickup step for picking up the semiconductor element 50 with the adhesive layer 3 from the base layer layer 1, and an adhesive layer 3 And a bonding step of adhering the semiconductor element 50 to the support substrate 60 for mounting the semiconductor element through the? Hereinafter, each process is demonstrated, referring drawings.

(Attachment process)

First, the semiconductor processing tape 10 is arrange | positioned at a predetermined apparatus. Subsequently, as shown in FIGS. 2A and 2B, the semiconductor processing tape 10 is attached to the semiconductor wafer W such that the adhesive layer 3 is in contact with one surface Ws of the semiconductor wafer W. Attach to. It is preferable that the circuit surface Wc of the semiconductor wafer W is a surface on the opposite side to the surface Ws.

Dicing Process

Next, as illustrated in FIG. 2C, the semiconductor wafer W, the adhesive layer 2, and the adhesive layer 3 are diced. At this time, you may dicing the base material layer 1 to the middle. Thus, the tape 10 for a semiconductor process also functions as a dicing sheet.

(Ultraviolet rays irradiation process)

Next, as shown in FIG. 2 (d), when the adhesive layer 2 is UV type, the adhesive layer 2 is cured by irradiating ultraviolet rays to the adhesive layer 2, and the adhesive layer 2 and The adhesive force between the contact bonding layers 3 is reduced. It is preferable that the wavelength of the ultraviolet-ray to irradiate is 200-400 nm, and as irradiation conditions, it is preferable to irradiate so that it may be illumination intensity: 30-240 mW / cm <2> and irradiation amount 200-500 mJ.

(Pickup process)

After irradiating the ultraviolet rays, as shown in Fig. 2E, by expanding the base layer 1, the needles 42 from the adhesive layer 3 side are separated from each other while the semiconductor elements 50 obtained by cutting are spaced from each other. The semiconductor element 50 with the adhesive layer lifted up by) is sucked by the suction collet 44 and picked up. On the other hand, the semiconductor element 50 with an adhesive layer has a semiconductor element Wa and an adhesive layer 3a. In addition, the semiconductor element Wa is obtained by dividing the semiconductor wafer W, and the adhesive layer 3a is obtained by dividing the adhesive layer 3. Although it is not necessary to necessarily expand in a pick-up process, pick-up property can be improved more by expanding.

In addition, the lifting amount by the needle 42 can be selected as needed. In addition, a two-stage or three-stage pick-up method may be performed, for example, from the viewpoint of securing sufficient pick-up property for the ultra-thin wafer. In addition, the semiconductor element 50 may be picked up by a method other than the suction collet 44.

(Adhesion step)

After picking up the semiconductor element 50 with an adhesive layer, as shown in FIG.2 (f), the support substrate for semiconductor element mounting through the adhesive layer 3a by thermocompression bonding the semiconductor element 50 with an adhesive layer by thermo-compression | bonding. To 60. After mounting the semiconductor element 50 with an adhesive layer on the support substrate 60 via the adhesive layer 3a, the semiconductor element 50 with an adhesive layer was again bonded to the semiconductor element 50 through the adhesive layer 3a by thermocompression bonding. Wa) may be adhered to. Thereby, the some semiconductor element Wa can be mounted more reliably on the support substrate 60.

3, it is preferable to electrically connect the semiconductor element Wa and the support substrate 60 by the wire bond 70 as needed. Under the present circumstances, the semiconductor element Wa, the contact bonding layer 3a, and the support substrate 60 are heated at 170 degreeC for about 15 to 60 minutes, for example. In addition, after connecting by wire bonding, you may resin-seale the semiconductor element Wa as needed. The resin encapsulant 80 is formed on the surface 60a of the support substrate 60, and on the other side of the support substrate 60 for the electrical connection with an external substrate (motherboard). As the solder ball 90 may be formed.

On the other hand, it is preferable that the adhesive layer 3a is in the state of semi-hardening at the time of resin sealing. Thereby, the adhesive layer 3a can be filled more favorably in the recessed part of the unevenness | corrugation formed in the surface 60a of the support substrate 60 at the time of resin sealing. The semi-cured state means a state in which the adhesive layer 3a is not completely cured. The adhesive layer 3a in the semi-cured state may be finally heat-cured using one or a plurality of heat treatments in the manufacturing process of the semiconductor device.

By passing through the above process, the semiconductor device 100 can be manufactured using the tape 10 for a semiconductor process.

[Temporary Fixing Tape]

The tape 10 for semiconductor processing temporarily fixes the board | substrate S to one surface of the contact bonding layer 3 in the manufacturing process of a semiconductor device, and after peeling off the base material layer 1 and the adhesion layer 2, the contact bonding layer ( It can be used to temporarily fix the semiconductor wafer W on the other side of 3).

4A to 4F are cross-sectional views illustrating a process of manufacturing a semiconductor device using the semiconductor processing tape 10 as a temporary fixing tape. When using the semiconductor processing tape 10 as a temporary fixing tape, the base material layer 1, the adhesion layer 2, and the contact bonding layer 3 do not remain in the semiconductor device finally manufactured (FIG. 4 (f). ) Reference).

As shown in FIG. 4A, the semiconductor processing tape 10 is attached to the substrate S such that the adhesive layer 3 is in contact with the surface of the substrate S. As shown in FIG. The temperature at this time may be about 50-90 degreeC. By bonding the substrate S and the semiconductor processing tape 10 under these temperature conditions, the adhesive force between the adhesive layer 3 and the substrate S can be made larger than the adhesive force between the adhesive layer 3 and the adhesive layer 2. Can be.

That is, the board | substrate S is for controlling the adhesiveness of the contact bonding layer 3 in the state in which the contact bonding layer 3 was bonded. On the other hand, the adhesive layer 3 in the state bonded to the board | substrate S is controlled by adhesiveness, and becomes a layer which has predetermined heat resistance.

By peeling the base material layer 1 and the adhesion layer 2 from the state shown in FIG. 4A, as shown in FIG. 4B, the laminated body which consists of the board | substrate S and the contact bonding layer 3 ( 20) is obtained. Subsequently, the semiconductor wafer W is attached to the adhesive layer 3 so that the surface Ws of the semiconductor wafer W is in contact with the adhesive layer 3. On the other hand, the surface opposite to the surface Ws of the semiconductor wafer W is the circuit surface Wc. Thereby, as shown in FIG.4 (c), the base material S is bonded by the one surface F1 of the contact bonding layer 3, and the semiconductor wafer (the other side F2) of the contact bonding layer 3 is carried out. The laminated body 30 to which W) was bonded is obtained. The temperature at the time of bonding the adhesive layer 3 and the semiconductor wafer W may be about 50-90 degreeC. By bonding the adhesive layer 3 and the semiconductor wafer W under this temperature condition, the adhesive force between the adhesive layer 3 and the semiconductor wafer W can be made larger than the adhesive force between the adhesive layer 3 and the substrate S. FIG. have.

After performing necessary processing (for example, dicing) with respect to the semiconductor wafer W in the laminated body 30 shown in FIG.4 (c), the board | substrate S is peeled off by pick-up. Thereby, the laminated body 40 which consists of the contact bonding layer 3a and semiconductor element Wa shown in FIG.4 (d) is obtained. Subsequently, the semiconductor element Wa is mounted on the support substrate 60 with the circuit surface Wc of the semiconductor element Wa facing the support substrate 60 (see FIG. 4E). What is necessary is just to interpose an adhesive agent (not shown) between the semiconductor element Wa and the support substrate 60. Thereafter, the adhesive layer 3a is peeled off (see FIG. 4 (f)). From the state shown in FIG.4 (f), a semiconductor device is manufactured by electrically connecting the semiconductor element Wa and the support substrate 60, for example by wire bond, as needed.

Example

This invention is demonstrated based on an Example. The present invention is not limited to the following examples.

(Production of adhesive film)

As an adhesive, the acrylic copolymer was obtained by the solution polymerization method using the following main monomers and a functional monomer. In other words, 2-ethylhexyl acrylate and methyl methacrylate were used as the main monomer, and hydroxyethyl acrylate and acrylic acid were used as the functional monomer. The weight average molecular weight of the said acrylic copolymer was 400,000, and the glass transition point was -38 degreeC. The adhesive solution which mix | blended 10 mass parts of polyfunctional isocyanate crosslinking agents (Mitsubishi Chemical Corporation make, brand name Mytec NY730A-T) with respect to 100 mass parts of this acryl copolymer was prepared. The pressure-sensitive adhesive solution was coated and dried on the surface release treatment polyethylene terephthalate (thickness 25 μm) so that the pressure-sensitive adhesive thickness at the time of drying was 10 μm. Moreover, the polyolefin base material (100 micrometers in thickness) which consists of polypropylene / vinyl acetate / polypropylene was laminated on the adhesive surface. This obtained the adhesion layer and the adhesion film which consists of a polyolefin base material (base material layer). This adhesive film was left to stand at room temperature for 2 weeks to sufficiently age.

<Example 1>

(Preparation of Adhesive Varnish)

The adhesive varnish was obtained by mixing the following materials and vacuum degassing.

Thermoplastic resin: 100 parts by mass of HTR-860P-3 (trade name, manufactured by Nagase Chemtex Co., Ltd., glycidyl group-containing acrylic rubber, molecular weight: 1 million, Tg -7 ° C)

Thermosetting component: 20 parts by mass of YDCN-700-10 (trade name, manufactured by Shinnitetsu Sumikin Chemical Co., Ltd., o-cresol novolac type epoxy resin, epoxy equivalent 210)

Thermosetting component: 17 parts by mass of Mirex XLC-LL (trade name, Mitsui Chemicals, Phenol Aralkyl Resin)

Curing accelerator: 0.04 parts by mass of 2PZ-CN (trade name, Shikoku Kasei Kogyo Co., Ltd., imidazole compound)

Inorganic filler: 12 parts by mass of aerosil R972 (trade name, manufactured by Nippon Aerosil Co., Ltd., silicon oxide)

Silane coupling agent: 0.6 parts by mass of A-189 (trade name, manufactured by Nippon Unicar Co., Ltd., γ-mercaptopropyltrimethoxysilane)

Silane coupling agent: 1.7 parts by mass of A-1170 (trade name, manufactured by Nippon Unicar Co., Ltd., γ-ureidopropyltriethoxysilane)

(Production of tape for semiconductor processing)

The said adhesive varnish was apply | coated on the surface release process polyethylene terephthalate (The Teijin Dupont Film Co., Ltd. make, Teisin Tetron film: A-31) of thickness 75micrometer. This obtained the adhesive sheet in which the adhesive layer was formed in one surface of the resin film. The tape for a semiconductor process was obtained by bonding this adhesive sheet and the said adhesive film. On the other hand, the adhesive sheet and the adhesive film were bonded together so that the adhesive layer of the adhesive sheet and the adhesive layer of the adhesive film were in direct contact. By adhering the adhesive layer to the adhesive layer, the adhesive layer formed on the polyethylene terephthalate can be inverted reliably on the adhesive layer side.

(Example 2)

Except having made each material used for preparation of an adhesive varnish into the compound shown in Example 2 of Table 1, it carried out similarly to Example 1, and obtained the tape for a semiconductor process.

(Comparative Example 1)

A tape for semiconductor processing was obtained in the same manner as in Example 1 except that each material used for preparation of the adhesive varnish was used in the formulation shown in Comparative Example 1 of Table 1. In addition, "EXA-830CRP" in Table 1 is a brand name of the thermosetting resin (bisphenol F-type epoxy resin, epoxy equivalent 170) of DIC Corporation.

(Comparative Example 2)

A tape for semiconductor processing was obtained in the same manner as in Example 1 except that each material used for preparation of the adhesive varnish was used as the formulation shown in Comparative Example 2 of Table 1. In addition, "LF-4871" in Table 1 is a brand name of the thermosetting resin (bisphenol-A epoxy resin, epoxy equivalent 118) by DIC Corporation, and "YDF-8170C" is Shinnitetsu Sumikin Chemical Co., Ltd. It is a brand name of the thermosetting resin (bisphenol F-type epoxy resin, epoxy equivalent 157) of manufacture, and "SC-2050-HLG" is a brand name of the filler of the admatex company make.

(Comparative Example 3)

A tape for semiconductor processing was obtained in the same manner as in Example 1 except that each material used for preparation of the adhesive varnish was used as the formulation shown in Comparative Example 3 of Table 1.

(Comparative Example 4)

A tape for semiconductor processing was obtained in the same manner as in Example 1 except that each material used for preparation of the adhesive varnish was used in the formulation shown in Comparative Example 4 of Table 1.

The tape for semiconductor processing which concerns on an Example and a comparative example was evaluated by the following method.

(1) shrinkage of adhesive layer

The tape for semiconductor processing which concerns on an Example and a comparative example was cut | judged to the size of 100 mm x 100 mm, respectively. The adhesive film (adhesive layer and base material layer) and the surface release process polyethylene terephthalate were peeled from each sample, and only the adhesive layer was used, and this was made into the sample for a measurement. The measurement sample according to Examples and Comparative Examples was cured by heating at 130 ° C. for 1 hour. The size of the sample after this curing treatment was measured, and the shrinkage ratio was calculated by the following formula. In Table 1, the sample whose shrinkage value was less than 2% was called "A", and the sample which was 2% or more was called "B".

Shrinkage (%) = (sample area after curing) / (sample area before curing) x 100

(2) the thermal modulus of elasticity of the adhesive layer after curing treatment

The sample after hardening used for the said shrinkage evaluation was cut into the size of 4 mm x 30 mm as a sample for a measurement. The sample was subjected to a tensile load using a dynamic viscoelasticity measuring device DVE-V4 (trade name, manufactured by Rheology Co., Ltd.) and measured from -50 ° C to 300 ° C under conditions of a frequency of 10 Hz and a heating rate of 10 ° C / min. It was. The elasticity modulus of temperature 100 degreeC was made into thermal elasticity modulus. In Table 1, the sample whose thermal elasticity modulus was less than 5 Mpa was called "A", and the sample which was 5 Mpa or more was called "B".

(3) 90 ° peeling force of the adhesive layer to the wafer (evaluation of adhesion to the wafer)

What cut | disconnected the sample after hardening used for the said shrinkage property to 10 mm width was made into the sample for a measurement. The sample for measurement was attached to the surface of the wafer of silicon. Then, the adhesive tape (auxiliary tape) was affixed on the sample for a measurement, and the sample for a measurement was removed from the wafer at an angle of 90 degrees at 50 mm / min. In Table 1, the sample whose value of 90 degree peeling force was 15 N / m or more was called "A", and the sample which was less than 15 N / m was called "B".

(4) Surface roughness of the adhesive layer after peeling

The surface roughness Tp of the contact bonding layer after evaluation (after peeling) of the said "adhesion force of the contact bonding layer to a wafer" was measured using the laser microscope (made by Gience Co., Ltd.). In Table 1, the sample whose surface roughness (Tp30 value was 30 or less was called "A", and the sample larger than 30 was called "B".

According to the present invention, a tape for semiconductor processing having excellent versatility in a semiconductor manufacturing process is provided.

1: base material layer 2: adhesive layer
3: adhesive layer 10: tape for semiconductor processing
F1: One side of the adhesive layer F2: The other side of the adhesive layer
S: substrate W: semiconductor wafer

Claims (7)

As a tape for semiconductor processing in which a base material layer, an adhesion layer, and the adhesive layer which has a thermosetting property are laminated | stacked in this order,
The tape for semiconductor processing after the 1-hour hardening process at 130 degreeC, the shrinkage rate of the said contact bonding layer is less than 2%, and the hot time elasticity rate of the said contact bonding layer is less than 5 Mpa. The tape for semiconductor processing of Claim 1 whose peeling force of the said adhesive layer with respect to a wafer is 15 N / m or more after 1-hour hardening process at 130 degreeC. The substrate according to claim 1 or 2, wherein in the manufacturing process of the semiconductor device, the substrate is temporarily fixed to one surface of the adhesive layer,
The semiconductor processing tape used for temporarily fixing a wafer to the other surface of the said contact bonding layer after peeling the said base material layer and the said contact bonding layer. The tape for semiconductor processing according to any one of claims 1 to 3, wherein all of the base material layer, the adhesive layer, and the adhesive layer do not remain in the finally produced semiconductor device. The said contact bonding layer is a thermoplastic resin, a thermosetting resin, a hardening accelerator, and a filler, The filler of any one of Claims 1-4,
The tape for semiconductor processing whose content of the said thermosetting resin in the said contact bonding layer when content of the said thermoplastic resin in the said contact bonding layer is 100 mass parts is 1-40 mass parts. The tape for semiconductor processing of Claim 5 whose content of the said filler in the said contact bonding layer is 1-330 mass parts when content of the said thermoplastic resin in the said contact bonding layer is 100 mass parts. The tape for semiconductor processing according to any one of claims 1 to 6, wherein the adhesive layer is formed of a non-UV adhesive.

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