JP2003086614A - Method of manufacturing semiconductor device, semiconductor bonding/peeling film, lead frame using the same semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a lead frame using a semiconductor bonding/peeling film whose workability at the time of wire bonding is satisfactory, which sufficiently prevents the leakage of a sealing material at the time of sealing and which can be peeled off without the remainder of paste after sealing, and to provide a semiconductor device. SOLUTION: The manufacturing method of the semiconductor device includes a process for bonding the semiconductor bonding/peeling film 2 where an acrylic adhesive layer is formed on a support film to one face of the lead frame 1 where multiple patterns having die pads and inner leads are formed; a process for bonding a semiconductor element 5 to a die pad 6 on the exposure face of the lead frame; a process for connecting the semiconductor element and the inner lead by wire bonding; a process for collectively sealing the exposure face of the lead frame, the multiple semiconductor elements, and multiple wires by the sealing material 4; a process for peeling the semiconductor bonding/ peeling film 2 from the lead frame 1 and the sealing material 4; and a process for dividing the sealed lead frame.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention has good workability during wire bonding and sufficiently prevents leakage of a sealing material during sealing.
Further, there is provided a semiconductor device manufacturing method capable of manufacturing a semiconductor device with high workability by using a semiconductor adhesive / separation film that can be peeled off after sealing without leaving an adhesive residue. For adhesion
The present invention relates to a lead frame with an adhesive / peel film using a release film and a semiconductor device.

[0002]

2. Description of the Related Art Conventionally, in a semiconductor package, a semiconductor element is bonded onto a die pad with an adhesive such as silver paste.
A package having a structure in which this and a lead frame are joined with a wire and then the whole is sealed while leaving an outer lead for external connection has been used. Among them, for example, QFP
(Quad flat package) structure, but with smaller area,
There is still room for improvement in terms of thinning.

On the other hand, in order to solve these problems, a package having a structure in which only one side (semiconductor element side) of the package is sealed and the exposed lead frame on the back side is used for external connection has been developed. Among them, for example, QF
N (Quad Flat Non-leaded Package) and SON (Small)
Outline Non-leaded Package). Since the lead frame does not protrude from the encapsulation resin in the package having this structure, the area and the thickness can be reduced, but problems such as the encapsulation resin wrapping around the back surface of the lead frame during the encapsulation are likely to occur. Therefore, in order to prevent this, a method has been proposed in which an adhesive / release film is first attached to the back surface of the lead frame to protect it, die-bonding, wire-bonding, sealing, and then peeling off (JP-A-10-1277).
3 gazette).

Further, in Japanese Patent Laid-Open No. 2000-294580, an adhesive tape having a heat shrinkage rate of 3% or less at the time of resin sealing is attached to a lead frame, die bonding, wire bonding,
A method of peeling after sealing is proposed.

However, both of the above two methods are methods of individually sealing semiconductor elements, and are more productive than the method of encapsulating the semiconductor elements proposed in the present invention and then dividing. Easy to fall. Further, when the above-mentioned tape is used, defective bonding of the wire is likely to occur during wire bonding, and leakage of the sealing material during sealing is likely to occur. In this way, the adhesive / release film for semiconductors is adhered to the lead frame, the semiconductor elements and the wires are collectively sealed with the sealing material, and then the adhesive / release film for semiconductors is removed from the lead frame and the sealing material. In a method of obtaining a plurality of semiconductor devices each having one semiconductor element by separating a lead frame that has been peeled off and further sealed, a bonding failure is unlikely to occur during wire bonding, and a sealing material during sealing There has been no method of manufacturing a semiconductor device that does not leak.

[0006]

SUMMARY OF THE INVENTION The present invention provides a semiconductor adhesive which has good workability during wire bonding, can sufficiently prevent leakage of a sealing material during sealing, and can be peeled off without adhesive residue after sealing. A method for manufacturing a semiconductor device, which is capable of manufacturing a semiconductor device with high workability by using a release film, including a semiconductor adhesive / release film, a lead frame and a semiconductor device using the semiconductor adhesive / release film. Is provided.

[0007]

That is, according to the present invention, an adhesive / semiconductor for semiconductor comprising an acrylic pressure-sensitive adhesive layer formed on a support film on one surface of a lead frame having a plurality of patterns having a die pad and inner leads formed thereon. Step of adhering release film, step of adhering semiconductor element to die pad on exposed surface of lead frame, step of connecting semiconductor element and inner lead with wire by wire bonding, exposed surface of lead frame, plural semiconductor elements And a step of collectively sealing a plurality of wires with a sealing material, a step of peeling the adhesive / peeling film for a semiconductor from the lead frame and the sealing material, and dividing the sealed lead frame into one piece each. The present invention relates to a method of manufacturing a semiconductor device including a step of obtaining a plurality of semiconductor devices each having a semiconductor element.

In the present invention, a lead frame and
90 degree peel strength at 5 ° C is 5 N / m or more, 150
It is preferable to use a semiconductor adhesive / release film having a N / m or less. In the present invention, it is 1 at 180 ° C.
It is preferable to use an adhesive / peeling film for a semiconductor, which has a 90 degree peel strength at 180 ° C. with a lead frame of 5 N / m or more and 50 N / m or less after heating for a time.

Further, in the present invention, the elastic modulus at 180 ° C. after heating at 180 ° C. for 1 hour is 0.1 MPa or more 5
It is preferable to use an adhesive / release film for semiconductors in which an acrylic adhesive having a pressure of 0 MPa or less is formed on a support film. Further, in the present invention, it is preferable to use an adhesive / peel film for semiconductors in which the material of the support film is aromatic polyimide.

Further, in the present invention, it is preferable to use an adhesive / peeling film for a semiconductor, which has a temperature of 5% weight reduction of 250 ° C. or higher. In the present invention, an acrylic pressure-sensitive adhesive layer is formed on one surface of the support film, and a semiconductor adhesive / release film provided with a release cover film thereon is used, and the cover film is removed at the time of adhesion. Preference is given to using.

The present invention also relates to an adhesive / peel film for semiconductors, which is used in the above-mentioned method for manufacturing a semiconductor device and has an acrylic pressure-sensitive adhesive layer formed on one surface of a support film. The present invention also relates to a lead frame with an adhesive / peelable film, comprising a plurality of patterns having a die pad and inner leads formed by adhering the adhesive / peelable film for semiconductors. The present invention also relates to a semiconductor device obtained by using the method for manufacturing a semiconductor device described above.

[0012]

BEST MODE FOR CARRYING OUT THE INVENTION (Manufacturing Method of Semiconductor Device) According to the manufacturing method of a semiconductor device of the present invention, an acrylic pressure-sensitive adhesive layer is supported on one surface of a lead frame formed with a plurality of patterns having a die pad and inner leads. The process of adhering the adhesive / release film for semiconductors formed on the film,
A step of bonding a semiconductor element to a die pad on the exposed surface of the lead frame, a step of connecting the semiconductor element and an inner lead with a wire by wire bonding, an exposed surface of the lead frame, a plurality of semiconductor elements and a plurality of wires are sealed. A plurality of semiconductors each having one semiconductor element by a step of collectively sealing with a material, a step of peeling the adhesive / peel film for semiconductor from the lead frame and the sealing material, and dividing the sealed lead frame. The step of obtaining a device is included.

As a concrete example of the manufacturing method of the present invention,
For example, a method including the following steps may be mentioned. (1) As the lead frame, a lead frame in which a plurality of patterns having a die pad and an inner lead is formed is used, and an acrylic adhesive layer is formed on a support film on one surface of the lead frame. (2) Then, using a bonding agent such as silver paste on the die pad on the exposed surface of the lead frame (the surface opposite to the surface on which the adhesive / release film is bonded), a semiconductor element Glued, 140-200
A step of curing an adhesive such as a silver paste by heating at 30 ° C. for 30 minutes to 2 hours, (3) then 150 to
A step of connecting the inner lead of the lead frame and the semiconductor element by wire bonding such as a gold wire by heating at 250 ° C., (4) at 150 to 200 ° C., the exposed surface of the lead frame, the plurality of semiconductor elements, and A step of collectively sealing a plurality of wires with a sealing material, (5) a step of curing the sealing material resin by heating at 150 to 200 ° C. for 4 to 6 hours,
(6) A step of peeling the adhesive / peel film for semiconductor from the lead frame and the encapsulant at 0 to 50 ° C., (7) Dividing the encapsulated lead frame into a plurality of semiconductor elements each having one semiconductor element. It is a method including the steps of obtaining a semiconductor device. The step (6) can be performed before the step (5).

The adhesive / peel film for semiconductors used in the production method of the present invention is an adhesive / peel film in which an acrylic pressure-sensitive adhesive layer is formed on a support film. When an acrylic pressure-sensitive adhesive is used, since the elastic modulus at high temperature is high, the pressure-sensitive adhesive layer is less likely to be softened by the heat in the wire bonding process, and a wire bonding failure is less likely to occur. Further, since the adhesive strength to the lead frame is good, the sealing material is unlikely to leak at the time of sealing. Furthermore, since it has excellent heat resistance, it is not easily deteriorated by heat during wire bonding or sealing, and adhesive residue is less likely to occur when peeling.

In the above case, when a rubber adhesive such as butyl rubber is used instead of the acrylic adhesive, the adhesive is apt to be left behind when it is peeled off because it is deteriorated by heat during wire bonding and sealing. Further, when a silicone-based adhesive is used, the elastic modulus at high temperature is low, and therefore the adhesive layer is likely to be softened by the heat in the wire bonding step, resulting in poor wire bonding.

The composition of the acrylic pressure-sensitive adhesive is not particularly limited, but is preferably a copolymer of an acrylic acid alkyl ester having an alkyl group containing 1 to 4 carbon atoms and another monomer. The monomer to be copolymerized is not particularly limited, but acrylic acid, methacrylic acid, itaconic acid, mesaconic acid, citraconic acid, fumaric acid, maleic acid, itaconic acid monoalkyl ester, mesaconic acid monoalkyl ester, citraconic acid monoalkyl ester, fumaric acid. Carboxyl group-containing monomers such as acid monoalkyl ester and maleic acid monoalkyl ester, acrylic acid 2-hydroxyethyl ester, methacrylic acid 2
-Hydroxyl group-containing monomer such as hydroxyethyl ester,
Vinyl monomers such as vinyl acetate, methyl methacrylate,
Alkyl methacrylates such as ethyl methacrylate and 2-ethylhexyl methacrylate, glycidyl group-containing monomers such as glycidyl acrylate and glycidyl methacrylate, polyethylene glycol acrylate, polyethylene glycol ester methacrylic acid, polypropylene glycol ester acrylate, methacrylic Acid polypropylene glycol ester, acrylic acid cellulose ester, ether group-containing monomer such as methacrylic acid cellulose ester, isocyanate ethyl acrylate, isocyanate ethyl methacrylate, acrylamide, methacrylamide, tertiary butylaminoethyl acrylate, tertiary butylaminoethyl methacrylate, acrylonitrile, Preference is given to styrene, divinylbenzene, etc. There.

It is preferable to add a cross-linking agent to the acrylic pressure-sensitive adhesive in order to increase the elastic modulus at high temperature and prevent defective wire bonding in the wire bonding step. The type of cross-linking agent is not particularly limited, sorbitol polyglycidyl ether, polyglycerol polyglycidyl ether, pentaerythritol polyglycidyl ether, diglycerol polyglycidyl ether, glycerol polyglycidyl ether, neopentyl glycol diglycidyl ether, resorcin diglycidyl ether. Epoxy compounds such as tetramethylene diisocyanate, hexamethylene diisocyanate, toluene diisocyanate 3 adduct of trimethylolpropane, isocyanate compounds such as polyisocyanate, trimethylolpropane 4-tri-β-aziridinyl propionate, tetramethylol Methane-tri-β-aziridinyl propionate, N, N′-diphenylmethane-4,4′-bis (1
-Aziridinecarboxamide), N, N'-hexamethylene-1,6-bis (1-aziridinecarboxyl), N, N'-toluene-2,4-bis (1-aziridinecarboxamide), trimethylolpropane-
Aziridine compounds such as tri-β- (2-methylaziridine) propionate and melamine compounds such as hexamethoxymethylolmelamine are preferable. The amount of the cross-linking agent added is 100 parts by weight of the acrylic resin,
The amount of 0.1 to 20 parts by weight is preferable from the viewpoint of sufficiently increasing the elastic modulus at high temperature.

In the method for manufacturing a semiconductor device of the present invention, a 90 ° peel strength at 25 ° C. with a lead frame is 5 N / m or more and 150 N / m or less. Preferably. The material of the lead frame is not particularly limited, but an iron-based alloy such as 42 alloy, or copper or a copper-based alloy can be used. The surface of the lead frame made of copper or a copper-based alloy can be coated with nickel, palladium, gold, silver, or the like. When measuring the 90 degree peel strength at 25 ° C. between the adhesive / peel film for a semiconductor and the lead frame, a copper surface coated with nickel, palladium, gold, etc. in order is used. If the 90-degree peel strength is less than 5 N / m, problems such as peeling of the film from the lead frame and leakage of the encapsulant during the encapsulation during the carrying process are likely to occur. Further, when it exceeds 150 N / m, it is difficult to peel off when peeling after sealing. For this reason, 90 degree peel strength is 10 N / m or more, 100 N / m
The following is preferable, and 15 N / m or more and 50 N / m or less are particularly preferable.

In the present invention, the 90 ° peel strength at 25 ° C. is measured by peeling off the adhesive / peel film for semiconductor in the 90 ° direction from the lead frame according to the 90 ° peeling method of JIS Z 0237. . In particular,
At 25 ° C., the 90 ° peel strength when the adhesive / peel film for semiconductor is peeled from the lead frame at a speed of 270 to 330 mm / min can be measured by a 90 ° peel tester (manufactured by Testa Sangyo Co., Ltd.).

In the present invention, the adhesive conditions for the adhesive / release film for semiconductors are not particularly limited, but the adhesive temperature is 0-2.
It is preferably between 00 ° C, more preferably between 0 and 150 ° C, particularly preferably between 0 and 100 ° C. If the temperature is lower than 0 ° C, the 90-degree peel strength with the lead frame tends to decrease. Again 2
If it exceeds 00 ° C, workability tends to decrease. In the present invention, the method for adhering the adhesive / release film for semiconductors is not particularly limited, but a press or roll can be used.

Further, in the method for manufacturing a semiconductor device of the present invention, a semiconductor having a 90 degree peel strength at 180 ° C. with a lead frame of 5 N / m or more and 50 N / m or less after heating at 180 ° C. for 1 hour. It is preferable to use an adhesive / peel film. That is, in the method for manufacturing a semiconductor device of the present invention, usually, a semiconductor element is bonded to a die pad of a lead frame by using an adhesive such as a silver paste, and the temperature is set at 140 to 200 ° C (preferably 180 ° C) at
A step of curing the adhesive such as a silver paste is performed by heating for minutes to 2 hours (preferably 1 hour). Then, a step of heating at 150 to 250 ° C. (preferably 180 ° C.) to perform wire bonding of a gold wire or the like to the inner lead of the lead frame and the semiconductor element is performed. At this time, adhesion at 180 ° C after heating at 180 ° C for 1 hour
When the adhesive force between the release film and the lead frame is 5 N / m or more, leakage of the sealing material during sealing is significantly reduced.

After heating at 180 ° C. for 1 hour, the 90 ° peel strength at 180 ° C. with the lead frame is 5 N /
When the thickness is less than m, the sealing material easily enters the interface between the lead frame and the adhesive / peel film during sealing and leaks easily. Further, when it exceeds 50 N / m, it is difficult to peel off when peeling after sealing. For this reason, the 90 ° peel strength at 180 ° C. with the lead frame after heating at 180 ° C. for 1 hour is preferably 10 N / m or more and 30 N / m or less.

In the present invention, the 90 degree peel strength with a lead frame at 180 ° C. is 1 at 180 ° C. in an oven after bonding the lead frame and the adhesive / peel film.
After heating for a period of time, place it on a hot plate and peel off the adhesive / peel film in 90 ° direction from the lead frame according to JIS Z 0237 90 ° peeling method while keeping the surface temperature at 180 ° C. To measure. Specifically, at 180 ° C., the 90 ° peel strength when peeling off the adhesive / peeling film for a semiconductor at a speed of 270 to 330 mm / min can be measured by a 90 ° peel tester.

In the method for manufacturing a semiconductor device of the present invention, for a semiconductor, an acrylic adhesive having an elastic modulus at 180 ° C. of 0.1 MPa or more and 50 MPa or less after being heated at 180 ° C. for 1 hour is formed on a support film. It is preferable to use an adhesive / release film. That is, in the manufacturing method of the present invention, normally, a semiconductor element is bonded to a die pad of a lead frame using an adhesive such as silver paste,
A step of curing the adhesive such as a silver paste is performed by heating at 200 ° C. (preferably 180 ° C.) for 30 minutes to 2 hours (preferably 1 hour). Then 15
A step of heating at 0 to 250 ° C. (preferably 180 ° C.) and performing wire bonding of a gold wire or the like to the inner lead of the lead frame and the semiconductor element is performed. At this time, 180 ℃
Elasticity at 180 ℃ after heating for 1 hour at 0.1MP
When it is a or more, the bonding failure at the time of wire bonding is significantly reduced. The elastic modulus is measured by a dynamic viscoelasticity measuring device, DVE RHE.
It can be measured by using an OSPECTOLER (manufactured by Rheology Co., Ltd.) in a tensile mode with a temperature rising rate of 2 ° C./min and a measurement frequency of 10 Hz.

If the elastic modulus of the acrylic pressure-sensitive adhesive at 180 ° C. is less than 0.1 MPa, the stress is not sufficiently transmitted, and defective wire bonding is likely to occur. If it exceeds 50 MPa, the adhesive strength between the adhesive / peel film for semiconductors and the lead frame tends to decrease, so the elastic modulus at 180 ° C. is 0.1 MPa.
It is more preferable to be 10 MPa or less and 0.3
It is particularly preferable that the pressure is not less than MPa and not more than 5 MPa.

In the semiconductor device manufacturing method of the present invention, it is preferable to use aromatic polyimide as the material of the supporting film. By using aromatic polyimide,
It is possible to prevent defective wire bonding due to softening of the support film during wire bonding and leakage of the sealing material due to softening and dimensional change during sealing.

The type of the above polyimide film is not particularly limited, but the linear thermal expansion coefficient at 20 to 200 ° C. is 3 in order to reduce the warp of the lead frame after the semiconductor adhesive / peeling film is attached to the lead frame. × 1
It is preferably 0 ⁻⁵ / ° C. or lower, and 2.5 × 10 ⁻⁵ /
More preferably below ℃, 2.0 × 10 ^-5 / ℃
The following is particularly preferable. The linear thermal expansion coefficient can be measured by using a thermomechanical analyzer TMA-120 (manufactured by Seiko Denshi) in a tensile mode with a temperature rising rate of 10 ° C./min and a load of 10 g. Further, in order to reduce the warp of the lead frame after the adhesive / peel film for a semiconductor is attached to the lead frame, the heat shrinkage rate when heated at 200 ° C. for 2 hours is preferably 0.15% or less, It is more preferably 0.1% or less, and 0.0
It is particularly preferably 5 or less.

In the method of manufacturing a semiconductor device of the present invention, it is preferable to use an adhesive / peel film for a semiconductor having a support film having a thickness of 10 to 100 μm. If the thickness of the support film is less than 10 μm, the film is likely to tear when peeled off. If it exceeds 100 μm,
During the assembly process, the lead frame with the semiconductor adhesive / release film attached tends to warp. For this reason, the thickness of the support film is preferably 15 to 50 μm, and 20 to 30 μm.
m is particularly preferred.

In the method for manufacturing a semiconductor device of the present invention, it is preferable to use an adhesive / peel film for semiconductors having a pressure-sensitive adhesive layer having a thickness of 2 to 50 μm. If the thickness of the pressure-sensitive adhesive layer is less than 2 μm, the sealing property at the time of sealing is deteriorated and the sealing material is liable to leak, and if it exceeds 50 μm, a wire bonding failure is likely to occur during wire bonding. For this reason, the thickness of the pressure-sensitive adhesive layer is more preferably 3 to 30 μm, particularly preferably 4 to 25 μm.

In the method of manufacturing a semiconductor device of the present invention, it is preferable to use an adhesive / peel film for a semiconductor, the temperature of which is reduced by 5% by weight is 250 ° C. or higher. If the temperature at which the resin is reduced by 5% by weight is less than 250 ° C., heat in the wire bonding process causes outgas, which tends to contaminate the lead frame and the wires. For this reason, it is more preferable that the temperature for reducing by 5% by weight is 300 ° C. or higher. The temperature at which the resin decreases by 5% by weight is the differential thermal balance (TG / DTA-220 manufactured by Seiko Denshi Kogyo KK).
Thus, it can be determined by measuring at a temperature rising rate of 10 ° C./min.

In the method for manufacturing a semiconductor device of the present invention, an acrylic adhesive layer is formed on one side of a support film, and a semiconductor adhesive / release film provided with a release cover film thereon is used. It is preferable to peel off the cover film before use. By using the release cover film, it is possible to prevent the tapes from sticking to each other and being prevented from peeling off when the tapes are wound and stored. Further, by using the release cover film, the tape can be easily pulled out from the wound tape and used. The material of the cover film is not particularly limited, but polyethylene, polyethylene terephthalate, or the like can be used.

In the present invention, the material of the encapsulant is not particularly limited, and examples thereof include cresol novolac epoxy resin, phenol novolac epoxy resin, biphenyl diepoxy resin, naphthol novolac epoxy resin, and other epoxy resins. An additive such as a filler or a flame-retardant substance such as a bromine compound may be added to the sealing material. The sealing condition with the sealing material is not particularly limited, but usually,
It is carried out by heating at 150 to 200 ° C. and a pressure of 10 to 15 MPa for 2 to 5 minutes.

In the present invention, it is preferable that the resin does not remain on the lead frame and the sealing material when the adhesive / peeling film for semiconductor is peeled off after sealing with the sealing material. When the amount of residual resin is large, not only the appearance is inferior, but also when the lead frame is used for external connection, it is likely to cause poor contact.

In the above, after sealing with the sealing material,
After peeling off the adhesive / peel film for semiconductors, it is preferable to remove the resin remaining on the lead frame and the sealing material by mechanical brushing, solvent, water, acid, alkali or the like. The solvent is not particularly limited, but N-methyl-2-pyrrolidone, dimethylacetamide, diethylene glycol dimethyl ether, tetrahydrofuran, cyclohexanone, methyl ethyl ketone, dimethylformamide and the like are preferable.

(Adhesive / Peeling Film for Semiconductor) The adhesive / peeling film for semiconductor of the present invention is the adhesive / peeling film for semiconductor used in the production method of the present invention, and is specifically as described above.

(Leadframe with Adhesive / Peeling Film) The leadframe with adhesive / peelable film of the present invention is a leadframe having a plurality of patterns having a die pad and inner leads formed with the adhesive / peelable film for semiconductor of the present invention. It can be manufactured by bonding. In the present invention, the material of the lead frame is not particularly limited, but for example, an iron-based alloy such as 42 alloy, or copper or a copper-based alloy can be used. Further, the surface of the lead frame made of copper or a copper-based alloy may be coated with palladium, gold, silver or the like.

(Semiconductor Device) The structure of the semiconductor device manufactured by using the adhesive / peeling film for a semiconductor according to the present invention is not particularly limited, but for example, only one side (semiconductor element side) of the package is sealed and the back side is sealed. A package with a structure that uses a bare lead frame for external connection (Non Lead T
ype Package). Specific examples of the above packages include QFN (Quad Flat Non-leaded Package),
SON (Small Outline Non-leaded Package), LGA
(Land Grid Array) and the like. The semiconductor device of the present invention, for example, a step of adhering a semiconductor adhesive / release film having an acrylic pressure-sensitive adhesive layer formed on a support film on one surface of a lead frame composed of a plurality of patterns having a plurality of die pads and inner leads, Step of adhering the semiconductor element to the die pad on the exposed surface of the lead frame, step of connecting the semiconductor element and the inner lead by wire by wire bonding, exposed surface of the lead frame, sealing the plurality of semiconductor elements and the plurality of wires A step of collectively sealing with a material, a step of peeling the adhesive / peeling film for semiconductor from the lead frame and the sealing material, and a plurality of semiconductor devices each having one semiconductor element by dividing the sealed lead frame. Manufactured from the process of obtaining.
A semiconductor device manufactured by using the adhesive / peel film for a semiconductor of the present invention is excellent in high density, small area, and thin, and is incorporated in, for example, an information device such as a mobile phone.

[0038]

EXAMPLES The present invention will be described in detail with reference to examples. Example 1 A solution of an acrylic pressure-sensitive adhesive (toluene, solid content concentration 30%) was applied to one side of a 25 μm thick polyimide film (Kapton H manufactured by Toray-Dupont Co., Ltd.), and 130
After drying at 5 ° C. for 5 minutes, an adhesive / peel film for semiconductor having a 5 μm pressure-sensitive adhesive layer formed on one surface of the support film was obtained.
After the acrylic pressure-sensitive adhesive was heated at 180 ° C. for 1 hour, the elastic modulus at 180 ° C. was 0.3 MPa. The temperature at which the resulting adhesive / peel film for semiconductors decreased in weight by 5% was 327 ° C.

The obtained adhesive / peel film for semiconductor was adhered to a copper lead frame coated with palladium at 25 ° C. When the 90 ° peel strength at 25 ° C. between the adhesive / peel film for semiconductor and the lead frame after adhesion was measured, it was 15 N / m. The 90 ° peel strength at 180 ° C. of the adhesive / peel film for semiconductor and the lead frame after heating at 180 ° C. for 1 hour was 5 N / m.

Further, using this lead frame with an adhesive / peel film for a semiconductor, the steps of adhering a semiconductor element and wire bonding were performed. The wire bonding process was performed at 180 ° C., but when 80 joints were inspected, the average value of the wire pull strength was 7.0 g, and no joint failure occurred. Further, a sealing step was performed to manufacture the package shown in FIG. 1, but the sealing material did not leak. When the adhesion / release film was peeled off from the lead frame and the sealing resin at 25 ° C., the adhesive hardly adhered to the lead frame and the sealing resin and remained. After heating the encapsulant at 180 ° C. for 5 hours to cure it, the package was divided into the packages shown in FIG. 2, but no problems occurred during the process.

Example 2 A solution of an acrylic pressure-sensitive adhesive (toluene, solid content concentration 30%) was applied to one side of a 25 μm-thick polyimide film (Kapton H manufactured by Toray-Dupont Co., Ltd.),
After drying at 5 ° C. for 5 minutes, an adhesive / peel film for semiconductor having a pressure-sensitive adhesive layer of 15 μm formed on one surface of the support film was obtained. A 25 μm polyethylene terephthalate cover film was provided on the adhesive layer. After the acrylic pressure-sensitive adhesive was heated at 180 ° C. for 1 hour, the elastic modulus at 180 ° C. was 1.0 MPa. The temperature at which the resulting adhesive / peeling film for semiconductors loses 5% by weight was 330 ° C. In addition, the obtained adhesive / release film for semiconductors
It was bonded at 25 ° C. to a copper lead frame coated with palladium. At this time, the tape can be easily pulled out by providing the cover film. When the 90 degree peel strength at 25 ° C. of the adhesive / peel film for semiconductors and the lead frame after adhesion was measured, it was 20 N / m. The 90 ° peel strength at 180 ° C. of the adhesive / peel film for semiconductors and the lead frame after heating at 180 ° C. for 1 hour was 10 N / m.

Further, using this lead frame with an adhesive / peel film for a semiconductor, a semiconductor element adhering and wire bonding process was performed. The wire bonding process was carried out at 180 ° C., but when 80 joints were inspected, the average value of the wire pull strength was 7.5 g, and no joint failure occurred. Further, a sealing step was performed to manufacture the package shown in FIG. 1, but the sealing material did not leak. When the adhesion / release film was peeled off from the lead frame and the sealing resin at 25 ° C., the adhesive hardly adhered to the lead frame and the sealing resin and remained. After heating the encapsulant at 180 ° C. for 5 hours to cure it, the package was divided into the packages shown in FIG. 2, but no problems occurred during the process.

Example 3 Polyethylene naphthalate having a thickness of 25 μm (Teijin Ltd.)
A semiconductor with a 15 μm pressure-sensitive adhesive layer formed on one side of a support film by applying an acrylic pressure-sensitive adhesive solution (toluene, solid content concentration 30%) on one side of Teonex Co., Ltd., and drying at 130 ° C. for 5 minutes. An adhesive / peel film for use was obtained. A 25 μm polyethylene terephthalate cover film was provided on the adhesive layer. After the acrylic pressure-sensitive adhesive was heated at 180 ° C. for 1 hour, the elastic modulus at 180 ° C. was 1.0 MPa. The temperature at which the resulting adhesive / peel film for semiconductors decreased in weight by 5% was 311 ° C. The obtained adhesive / peel film for semiconductor was adhered to a copper lead frame coated with palladium at 25 ° C. At this time, the tape can be easily pulled out by providing the cover film. When the 90 degree peel strength at 25 ° C. of the adhesive / peel film for semiconductors and the lead frame after adhesion was measured, it was 20 N / m. Adhesion for semiconductors after heating at 180 ° C for 1 hour
9 at 180 ° C between release film and lead frame
When the 0 degree peel strength was measured, it was 10 N / m.

Further, using this lead frame with an adhesive / peel film for semiconductor, a semiconductor element adhering and wire bonding process was performed. The wire bonding process was performed at 180 ° C., but when 80 joints were inspected, the average value of the wire pull strength was 6.3 g, and no joint failure occurred. Further, a sealing step was performed to manufacture the package shown in FIG. 1. The workability was slightly low, but the sealing material did not leak. When the adhesion / release film was peeled off from the lead frame and the sealing resin at 25 ° C., the adhesive hardly adhered to the lead frame and the sealing resin and remained. After heating the encapsulant at 180 ° C. for 5 hours to cure it, the package was divided into the packages shown in FIG. 2, but no problems occurred during the process.

Example 4 A lead frame with an adhesive / peel film for a semiconductor was produced in the same manner as in Example 1 except that an uncoated copper lead frame was used as the lead frame. 25 ° C between the adhesive / release film for semiconductors and the lead frame after adhesion
90 degree peel strength at 40 N /
It was m. Moreover, when the 90 degree peel strength at 180 ° C. of the adhesive / peel film for semiconductors and the lead frame after heating at 180 ° C. for 1 hour was measured, it was 20 N / m.
Met.

Further, using this lead frame with an adhesive / peel film for a semiconductor, the steps of adhering a semiconductor element and wire bonding were performed. The wire bonding process was carried out at 180 ° C., but when 80 joints were inspected, the average value of the wire pull strength was 8.0 g, and no joint failure occurred. Further, a sealing step was performed to manufacture the package shown in FIG. 1, but the sealing material did not leak. When the adhesion / release film was peeled off from the lead frame and the sealing resin at 25 ° C., the adhesive hardly adhered to the lead frame and the sealing resin and remained. After heating the encapsulant at 180 ° C. for 5 hours to cure it, the package was divided into the packages shown in FIG. 2, but no problems occurred during the process.

Example 5 A solution of an acrylic pressure-sensitive adhesive (toluene, solid content concentration 30%) was applied to one side of a 25 μm thick polyimide film (Kapton H manufactured by Toray DuPont Co., Ltd.),
After drying at 5 ° C. for 5 minutes, an adhesive / peel film for semiconductor having a pressure-sensitive adhesive layer of 15 μm formed on one surface of the support film was obtained. After the acrylic pressure-sensitive adhesive was heated at 180 ° C. for 1 hour, the elastic modulus at 180 ° C. was 1.0 MPa. The temperature at which the resulting adhesive / peeling film for semiconductors reduced in weight by 5% was 325 ° C. The obtained adhesive / peel film for semiconductor was adhered to a copper lead frame coated with palladium at 25 ° C. When the 90 ° peel strength at 25 ° C. between the adhesive / peel film for semiconductor and the lead frame after adhesion was measured, it was 15 N / m. Further, the 90 ° peel strength at 180 ° C. of the adhesive / peel film for semiconductor and the lead frame after heating at 180 ° C. for 1 hour was measured and found to be less than 5 N / m.

Further, using this lead frame with an adhesive / peel film for a semiconductor, the steps of adhering a semiconductor element and wire bonding were performed. The wire bonding process was performed at 180 ° C., but when 80 joints were inspected, the average value of the wire pull strength was 7.0 g, and no joint failure occurred. Further, a sealing step was performed to manufacture the package shown in FIG. 1. The workability was slightly low, but the sealing material did not leak. When the adhesion / release film was peeled off from the lead frame and the sealing resin at 25 ° C., the adhesive hardly adhered to the lead frame and the sealing resin and remained. After heating the encapsulant at 180 ° C. for 5 hours to cure it, the package was divided into the packages shown in FIG. 2, but no problems occurred during the process.

Comparative Example 1 A polyimide film having a thickness of 25 μm (Kapton H manufactured by Toray-Dupont Co., Ltd.) was coated with a solution of a silicone adhesive on one side and dried at 130 ° C. for 5 minutes to prepare one side of the support film. An adhesive / peel film for semiconductor having a 5 μm pressure-sensitive adhesive layer formed thereon was obtained. 18 of the above silicone adhesive
After heating at 0 ° C. for 1 hour, the elastic modulus at 180 ° C. is 0.
It was less than 1 MPa. The temperature at which the resulting adhesive / peel film for semiconductors decreased in weight by 5% was 397 ° C. The obtained adhesive / peel film for semiconductor was adhered to a copper lead frame coated with palladium at 25 ° C. When the 90 ° peel strength at 25 ° C. of the adhesive / peel film for semiconductor and the lead frame after adhesion was measured, it was 25 N / m. Further, the 90 ° peel strength at 180 ° C. of the adhesive / peel film for semiconductor and the lead frame after heating at 180 ° C. for 1 hour was measured and found to be less than 5 N / m.

Further, using this lead frame with an adhesive / peel film for a semiconductor, the steps of adhering a semiconductor element and wire bonding were performed. The wire bonding process was performed at 180 ° C., but when 80 joints were inspected, the average value of the wire pull strength was 5.5 g, and 6 joints were defective. Further, a sealing step was performed to manufacture the package shown in FIG. 1, but the sealing material leaked. When the adhesion / release film was peeled off from the lead frame and the sealing resin at 25 ° C., the adhesive remained on the lead frame and the sealing resin. After heating the encapsulant at 180 ° C. for 5 hours to cure it, the package was divided into the packages shown in FIG. 2, but no problems occurred during the process.

The results of Examples 1 to 5 and Comparative Example 1 show that the semiconductor package can be manufactured with high workability and productivity by using the method for manufacturing a semiconductor device of the present invention.

[0052]

According to the method for manufacturing a semiconductor device of the present invention, the workability during wire bonding is good, leakage of the sealing material during sealing is sufficiently prevented, and the adhesive / peel film for semiconductor is sealed. After stopping, it can be peeled off without adhesive residue,
A semiconductor device can be manufactured with high workability.

[Brief description of drawings]

FIG. 1 is an example of a semiconductor device using the adhesive / peel film for a semiconductor of the present invention.

FIG. 2 is an example of a semiconductor device using the adhesive / peel film for semiconductor of the present invention.

[Explanation of symbols]

1. Lead frame 2. Adhesive tape 3. Wire 4. Sealing material 5. Semiconductor element 6. Die pad

   ─────────────────────────────────────────────────── ─── Continued front page    F term (reference) 5F061 AA01 BA01 CA21 CB12 DD14                       EA03

Claims (10)

[Claims] 1. A step of adhering a semiconductor adhesive / peel film having an acrylic pressure-sensitive adhesive layer formed on a support film to one surface of a lead frame formed with a plurality of patterns having a die pad and inner leads. The step of adhering the semiconductor element to the die pad on the exposed surface, the step of connecting the semiconductor element and the inner lead with a wire by wire bonding, the exposed surface of the lead frame, the plurality of semiconductor elements and the plurality of wires with a sealing material A step of sealing, a step of peeling the adhesive / peel film for semiconductor from the lead frame and the sealing material, and a step of dividing the sealed lead frame to obtain a plurality of semiconductor devices each having one semiconductor element. A method of manufacturing a semiconductor device including a step. 2. 90 at 25 ° C. with a lead frame
The method for manufacturing a semiconductor device according to claim 1, wherein an adhesive / peel film for semiconductor having a peel strength of 5 N / m or more and 150 N / m or less is used. 3. The 90 ° peel strength at 180 ° C. with a lead frame is 5 N after heating at 180 ° C. for 1 hour.
The method for manufacturing a semiconductor device according to claim 1, wherein an adhesive / peel film for semiconductor having a thickness of at least 50 m / m is used. 4. 180 after heating at 180 ° C. for 1 hour
The method for manufacturing a semiconductor device according to claim 1, wherein an adhesive / peel film for a semiconductor is used, in which an acrylic pressure-sensitive adhesive having an elastic modulus at 0 ° C. of not less than 0.1 MPa and not more than 50 MPa is formed on a support film. 5. An adhesive / release film for semiconductors, wherein the material of the support film is aromatic polyimide.
5. The method for manufacturing a semiconductor device according to any one of 4 above. 6. An adhesive / peeling film for semiconductors, which has a temperature of 5% weight loss of 250 ° C. or higher.
A method for manufacturing a semiconductor device according to any one of 1. 7. A semiconductor adhesive / peeling film comprising an acrylic pressure-sensitive adhesive layer formed on one surface of a supporting film, and a release cover film provided on the acrylic adhesive layer.
The method of manufacturing a semiconductor device according to claim 1, wherein a peeling film is used, and the cover film is peeled off at the time of bonding. 8. An adhesive / peeling film for a semiconductor, which is used in the method for manufacturing a semiconductor device according to claim 1, wherein an acrylic pressure-sensitive adhesive layer is formed on one surface of a support film. 9. A lead frame with an adhesive / peel film, comprising a plurality of patterns having a die pad and inner leads formed by adhering the adhesive / peel film for semiconductors according to claim 8. 10. A semiconductor device obtained by using the method for manufacturing a semiconductor device according to claim 1.