JP5548077B2 - Resin-sealing adhesive tape and method for manufacturing resin-sealed semiconductor device - Google Patents

Resin-sealing adhesive tape and method for manufacturing resin-sealed semiconductor device Download PDF

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JP5548077B2
JP5548077B2 JP2010206921A JP2010206921A JP5548077B2 JP 5548077 B2 JP5548077 B2 JP 5548077B2 JP 2010206921 A JP2010206921 A JP 2010206921A JP 2010206921 A JP2010206921 A JP 2010206921A JP 5548077 B2 JP5548077 B2 JP 5548077B2
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lead frame
resin
adhesive tape
pressure
sealing
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幸生 有満
広行 近藤
晋史 星野
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Nitto Denko Corp
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Description

本発明は、樹脂封止用粘着テープ及び樹脂封止型半導体装置の製造方法に関する。   The present invention relates to a resin-sealing adhesive tape and a method for manufacturing a resin-sealed semiconductor device.

近年、ＬＳＩの実装技術において、ＣＳＰ（Ｃｈｉｐ Ｓｉｚｅ／Ｓｃａｌｅ Ｐａｃｋａｇｅ）技術が注目されている。この技術のうち、ＱＦＮ（Ｑｕａｄ Ｆｌａｔ Ｎｏｎ−ｌｅａｄｅｄ ｐａｃｋａｇｅ）に代表されるような、リード端子がパッケージ内部に取り込まれた形態のパッケージが、小型化及び高集積化の面で特に注目されている。
このようなＱＦＮでは、リードフレーム面積あたりの生産性を飛躍的に向上させることができる製造方法が、特に注目されている。そのような方法として、複数のＱＦＮ用チップをリードフレームのダイパッド上に整列させ、金型のキャビティ内で封止樹脂にて一括封止し、その後、切断によって個別のＱＦＮ構造物に分割することを含む製造方法が挙げられる。 In recent years, CSP (Chip Size / Scale Package) technology has attracted attention in LSI mounting technology. Among these technologies, a package in which lead terminals are taken into the package, as represented by QFN (Quad Flat Non-leaded package), has been particularly noted in terms of miniaturization and high integration.
In such QFN, a manufacturing method that can dramatically improve the productivity per lead frame area has attracted particular attention. As such a method, a plurality of QFN chips are aligned on a die pad of a lead frame, collectively sealed with a sealing resin in a mold cavity, and then divided into individual QFN structures by cutting. The manufacturing method containing is mentioned.

このような、複数の半導体チップを一括封止するＱＦＮの製造方法では、樹脂封止時のモールド金型によってクランプされるリードフレームの領域は、パッケージパターン領域を完全に被覆する樹脂封止領域の外側の一部のみである。従って、パッケージパターン領域、特にその中央部では、リードフレーム裏面をモールド金型に十分な圧力で押さえつけることができず、封止樹脂がリードフレーム裏面側に漏れ出すことを防止することが非常に難しく、ＱＦＮの端子等が樹脂で被覆されるという問題が生じ易い。   In such a QFN manufacturing method that collectively seals a plurality of semiconductor chips, a lead frame region clamped by a mold during resin sealing is a resin sealing region that completely covers the package pattern region. Only part of the outside. Therefore, in the package pattern region, particularly in the central portion thereof, it is very difficult to prevent the sealing resin from leaking to the back side of the lead frame because the back side of the lead frame cannot be pressed against the mold with sufficient pressure. The problem of QFN terminals and the like being covered with resin is likely to occur.

このため、このようなＱＦＮの製造方法に対して、リードフレームの裏面側に粘着テープを貼り付け、この粘着テープの自着力（マスキング）を利用したシール効果により、樹脂封止時のリードフレーム裏面側への樹脂漏れを防ぐ製造方法が有効である。
つまり、リードフレームへの半導体チップの搭載後又はワイヤボンディングの実施後に耐熱性粘着テープをリードフレーム裏面に貼り合せることは、ハンドリングの面で実質的に困難であることから、まず、耐熱性粘着テープをリードフレームの裏面側に貼り合わせ、その後、半導体チップの搭載及びワイヤボンディングを経て、封止樹脂による封止を行い、耐熱性粘着テープを剥離することが望ましい。このような方法として、厚み１０μｍ以下の粘着剤層を有する耐熱性粘着テープを用いて、樹脂漏れを防止しつつワイヤボンディングなどの一連工程を実施する方法が提案されている（例えば、特許文献１）。 For this reason, an adhesive tape is affixed to the back side of the lead frame for such a QFN manufacturing method, and the sealing effect using the self-adhesive force (masking) of the adhesive tape allows the back side of the lead frame during resin sealing. A manufacturing method that prevents resin leakage to the side is effective.
In other words, after mounting the semiconductor chip on the lead frame or after wire bonding, it is substantially difficult to handle the heat-resistant adhesive tape on the back surface of the lead frame. Is bonded to the back side of the lead frame, and then, after mounting of the semiconductor chip and wire bonding, sealing with a sealing resin is performed, and the heat-resistant adhesive tape is peeled off. As such a method, a method of performing a series of steps such as wire bonding while preventing resin leakage using a heat-resistant adhesive tape having an adhesive layer having a thickness of 10 μm or less has been proposed (for example, Patent Document 1). ).

特開２００２−１８４８０１号公報JP 2002-184801 A

一般に、半導体装置の製造において、上述したような耐熱性粘着テープのリードフレームへの貼り合わせは、リードフレームメーカーにて行われる場合が多く、輸送を伴って半導体装置製造会社に納入される。この時、耐熱性粘着テープが貼り付けられたリードフレームは、輸送及び半導体装置製造会社でのハンドリングによって、振動又は衝撃が加えられ、リードフレームから耐熱性粘着テープが剥れる現象が発生し、後の封止工程での樹脂漏れの要因を招く。
従って、半導体装置の製造工程中のみならず、リードフレームに貼り付けられた状態での低温での保持（例えば、輸送等）の間においても、剥がれが生じにくい耐熱性粘着テープが求められている。 Generally, in manufacturing a semiconductor device, the heat-resistant adhesive tape as described above is often attached to a lead frame by a lead frame manufacturer, and is delivered to a semiconductor device manufacturing company with transportation. At this time, the lead frame to which the heat-resistant adhesive tape is attached is subjected to vibration or impact by transportation and handling at the semiconductor device manufacturing company, causing the phenomenon that the heat-resistant adhesive tape is peeled off from the lead frame. Cause a resin leak in the sealing process.
Accordingly, there is a need for a heat resistant adhesive tape that is less prone to peeling not only during the manufacturing process of a semiconductor device, but also during holding at a low temperature (for example, transportation) while being attached to a lead frame. .

本発明は、上記課題に鑑みなされたものであり、リードフレームへの貼り付け及びリードフレームからの剥離を確実に制御することができる粘着テープを提供することを一目的とする。
また、上述した粘着テープを用いた樹脂封止型半導体装置の製造方法を提供することを一目的とする。 The present invention has been made in view of the above problems, and an object thereof is to provide an adhesive tape capable of reliably controlling attachment to a lead frame and separation from the lead frame.
Another object is to provide a method for manufacturing a resin-encapsulated semiconductor device using the above-described adhesive tape.

本発明の樹脂封止型半導体装置の製造に使用するための樹脂封止用粘着テープは、
基材層と該基材層上に積層された粘着剤層とを備え、０℃雰囲気下の１８０°剥離でのリードフレームへの粘着力０．０１〜１０．０Ｎ／１９ｍｍ幅を有することを特徴とする。 The adhesive tape for resin sealing for use in the production of the resin-encapsulated semiconductor device of the present invention is
It has a base material layer and a pressure-sensitive adhesive layer laminated on the base material layer, and has an adhesive force to a lead frame of 0.01 to 10.0 N / 19 mm width at 180 ° peeling under an atmosphere of 0 ° C. Features.

このような樹脂封止用粘着テープは、リードフレーム表面に搭載された半導体チップを樹脂封止する際に前記リードフレームの少なくとも一面に貼着され、封止後に剥離するために用いられることが好ましい。
また、粘着剤層は、０℃での貯蔵弾性率５×１０６Ｐａ以下を有することが好ましい。
さらに、粘着剤層は、ガラス転移温度−５℃以下を有することが好ましい。
基材層は、３００℃以下にガラス転移温度を有さないことが好ましい。 Such a resin sealing pressure-sensitive adhesive tape is preferably used to be adhered to at least one surface of the lead frame when the semiconductor chip mounted on the surface of the lead frame is resin-sealed, and peeled off after sealing. .
The pressure-sensitive adhesive layer preferably has a storage elastic modulus at 0 ° C. of 5 × 10 6 Pa or less.
Furthermore, the pressure-sensitive adhesive layer preferably has a glass transition temperature of −5 ° C. or lower.
The base material layer preferably does not have a glass transition temperature at 300 ° C. or lower.

本発明の樹脂封止型半導体装置の製造方法は、リードフレームの少なくとも一面に、上述した粘着テープを貼着し、
前記リードフレーム上に半導体チップを搭載し、
該半導体チップ側を封止樹脂により封止し、
封止後に前記粘着テープを剥離する工程を含むことを特徴とする。 In the method for producing a resin-encapsulated semiconductor device of the present invention, the above-mentioned adhesive tape is attached to at least one surface of a lead frame,
A semiconductor chip is mounted on the lead frame,
Sealing the semiconductor chip side with a sealing resin;
It includes a step of peeling the adhesive tape after sealing.

本発明の樹脂封止用粘着テープによれば、リードフレームへの貼り付け及びリードフレームからの剥離を確実に制御することができる。
また、本発明の樹脂封止用粘着テープを用いて半導体装置を製造することにより、封止樹脂の樹脂漏れの発生等を確実に防止することができ、歩留まりを向上させることができる。 According to the resin sealing pressure-sensitive adhesive tape of the present invention, it is possible to reliably control the attachment to the lead frame and the peeling from the lead frame.
In addition, by manufacturing a semiconductor device using the resin-sealing adhesive tape of the present invention, it is possible to reliably prevent the occurrence of resin leakage of the sealing resin and improve the yield.

本発明の半導体装置の製造方法の一例を示す工程図である。It is process drawing which shows an example of the manufacturing method of the semiconductor device of this invention. 本発明の半導体装置の製造方法に用いるリードフレームの一例を示す平面図（ａ）、要部拡大図（ｂ）である。1A is a plan view showing an example of a lead frame used in the method for manufacturing a semiconductor device of the present invention, and FIG.

本発明の樹脂封止用粘着テープは、少なくとも、基材層と、その上に積層された粘着剤層とを備え、これらの層は、半導体製造プロセスにおける樹脂封止の際に使用される。   The pressure-sensitive adhesive tape for resin sealing of the present invention includes at least a base material layer and a pressure-sensitive adhesive layer laminated thereon, and these layers are used for resin sealing in a semiconductor manufacturing process.

基材層としては、特に限定されるものではなく、当該分野で使用される粘着テープの基材として用いられる材料からなるものであればどのようなものでも用いることができる。
特に、基材層は、通常の半導体製造プロセスで使用される加熱、特に樹脂封止時の加熱に対して耐性を有するものが適している。例えば、１７０℃以上、２００℃以上、２５０℃以上、３００℃以上の耐熱性を有しているものが挙げられる。封止樹脂は、一般に１７５℃前後の温度が付与されることから、このような温度条件下での著しい基材層の収縮又は基材そのものの破壊等が生じないものが好ましい。 The base material layer is not particularly limited, and any material can be used as long as it is made of a material used as a base material for a pressure-sensitive adhesive tape used in this field.
In particular, the base material layer is suitable to have resistance to heating used in a normal semiconductor manufacturing process, particularly heating during resin sealing. For example, what has heat resistance of 170 degreeC or more, 200 degreeC or more, 250 degreeC or more, and 300 degreeC or more is mentioned. Since the sealing resin is generally given a temperature of around 175 ° C., a resin that does not cause significant shrinkage of the base material layer or destruction of the base material itself under such temperature conditions is preferable.

また、別の観点から、基材層は、３００℃以下にガラス転移温度（Ｔｇ）を有さないことが好ましい。このような基材層を用いることにより、半導体装置の製造工程において、粘着テープが基材層のＴｇを超えて加熱された場合でも、粘着テープの変形等の防止、リードフレームの反り等の防止をすることができる。これによって、樹脂封止時のマスキングという機能を確実に果たして、ワイヤボンディングの成功率を向上させることができる。
本明細書中、「ガラス転移点（Ｔｇ）」とは、ＤＭＡ法（引っ張り法）において、昇温速度５℃／ｍｉｎ、サンプル幅５ｍｍ、チャック間距離２０ｍｍ、周波数１０Ｈｚの条件において確認される損失正接（ｔａｎδ）のピークを示す温度を意味する。このようなガラス転移点は、市販の装置（例、レトメトリック サイエンティフィック ＦＥ社製 ＲＳＡ-II）によって測定することができる。従って、ガラス転移温度を有さないとは、例えば、２６０℃以下の温度領域に前記損失正接（ｔａｎδ）のピークが認められないことを意味する。 Moreover, it is preferable that a base material layer does not have a glass transition temperature (Tg) below 300 degreeC from another viewpoint. By using such a base material layer, even when the adhesive tape is heated exceeding the Tg of the base material layer in the manufacturing process of the semiconductor device, the adhesive tape is prevented from being deformed and the lead frame is not warped. Can do. Thus, the function of masking at the time of resin sealing can be surely performed, and the success rate of wire bonding can be improved.
In the present specification, the “glass transition point (Tg)” is a loss confirmed in the DMA method (tensile method) under the conditions of a heating rate of 5 ° C./min, a sample width of 5 mm, a distance between chucks of 20 mm, and a frequency of 10 Hz. It means the temperature showing the peak of tangent (tan δ). Such a glass transition point can be measured by a commercially available apparatus (eg, RSA-II manufactured by Retometric Scientific FE). Therefore, having no glass transition temperature means, for example, that the loss tangent (tan δ) peak is not observed in a temperature region of 260 ° C. or lower.

基材層は、例えば、ポリエーテルイミド（ＰＥＩ）、ポリサルフォン（ＰＳＦ）、ポリフェニレンサルファイド（ＰＰＳ）、ポリエーテルエーテルケトン（ＰＥＥＫ）、ポリアリレート（ＰＡＲ）、アラミド、ポリイミド等の樹脂、液晶ポリマー（ＬＣＰ）、アルミ等の金属箔等によって形成することができる。なかでも、ポリイミド樹脂からなることが好ましい。特に、線熱膨張係数１.０×１０-5〜３.０×１０-5／Ｋ程度のポリイミド材料は、加工性及びハンドリング性が高く、もっとも好ましい材料のひとつである。 The substrate layer may be, for example, a resin such as polyetherimide (PEI), polysulfone (PSF), polyphenylene sulfide (PPS), polyetheretherketone (PEEK), polyarylate (PAR), aramid, polyimide, or liquid crystal polymer (LCP). ), A metal foil such as aluminum. Especially, it is preferable to consist of a polyimide resin. In particular, a polyimide material having a linear thermal expansion coefficient of about 1.0 × 10 −5 to 3.0 × 10 −5 / K is one of the most preferable materials because of its high workability and handling properties.

また、別の観点から、本発明の粘着テープを貼り付けるリードフレームは、後述するように、金属素材であることから、線熱膨張係数として１．８〜１．９×１０-5／Ｋ程度であることが一般的である。したがって、粘着テープの線熱膨張係数がリードフレームのそれとあまりに大きく違っていると、両者が貼り合わせられた状態で加熱されたとき、両者の熱膨張の差異からひずみを生じる。その結果、粘着テープにしわ、剥がれが生じる。そのため、粘着テープを構成する基材層の線熱膨張係数は、リードフレーム素材に近い１.０×１０-5〜３.０×１０-5／Ｋ程度であるものが適しており、１．５×１０-5〜２．５×１０-5／Ｋ以下であることが好ましい。
ここで、線熱膨張係数は、ＡＳＴＭ Ｄ６９６に準拠して、ＴＭＡ（サーモ・メカニカル・アナリシス）により測定される値である。 From another point of view, the lead frame to which the pressure-sensitive adhesive tape of the present invention is applied is a metal material, as will be described later, so that the linear thermal expansion coefficient is about 1.8 to 1.9 × 10 −5 / K. It is general that it is. Accordingly, if the linear thermal expansion coefficient of the adhesive tape is significantly different from that of the lead frame, distortion occurs due to the difference in thermal expansion between the two when they are heated together. As a result, the adhesive tape is wrinkled and peeled off. Therefore, it is suitable that the linear thermal expansion coefficient of the base material layer constituting the adhesive tape is about 1.0 × 10 −5 to 3.0 × 10 −5 / K which is close to the lead frame material. It is preferably 5 × 10 −5 to 2.5 × 10 −5 / K or less.
Here, the linear thermal expansion coefficient is a value measured by TMA (thermo-mechanical analysis) in accordance with ASTM D696.

基材層の厚さは、粘着テープの取扱性（例えば、テープの折れ又は裂けが生じ難いこと）の観点からは、好ましくは５μｍ以上、より好ましくは１０μｍ以上であり、一方、粘着テープの剥離性の観点からは、好ましくは１００μｍ以下、より好ましくは７５μｍ以下である。   The thickness of the base material layer is preferably 5 μm or more, more preferably 10 μm or more from the viewpoint of the handling property of the adhesive tape (for example, the tape is not easily broken or torn), while the adhesive tape is peeled off. From the viewpoint of property, it is preferably 100 μm or less, more preferably 75 μm or less.

粘着剤層は、耐熱性を有するものであれば、当該分野で通常用いられている粘着剤によって形成することができる。この粘着剤は、感圧型、感熱型、感光型のいずれの型でもよいが、エネルギー線の照射によって硬化するタイプの粘着剤であることが適している。これにより、使用後、被加工物からの剥離を容易に行うことができる。   If an adhesive layer has heat resistance, it can be formed with the adhesive normally used in the said field | area. This pressure-sensitive adhesive may be any of a pressure-sensitive type, a heat-sensitive type, and a photosensitive type, but is preferably a type of pressure-sensitive adhesive that is cured by irradiation with energy rays. Thereby, after use, peeling from the workpiece can be easily performed.

粘着剤層は、粘着テープの０℃雰囲気下での粘着力が０．０１〜１０．０Ｎ／１９ｍｍ幅となるような材料で形成されていることが適しており、０．０５〜８．００Ｎ／１９ｍｍ幅、さらに０．１０〜６．００Ｎ／１９ｍｍ幅となるような材料で形成されていることが好ましい。ここで、粘着力はＪＩＳ Ｚ０２３７：１９９９に準拠した方法によってリードフレームからの剥離（１８０°剥離）によって測定した場合の値である。   The pressure-sensitive adhesive layer is suitably formed of a material whose pressure-sensitive adhesive strength of the pressure-sensitive adhesive tape in an atmosphere of 0 ° C. is 0.01 to 10.0 N / 19 mm width, and 0.05 to 8.00 N / 19 mm width, and preferably 0.10 to 6.00 N / 19 mm width. Here, the adhesive strength is a value when measured by peeling from the lead frame (180 ° peeling) by a method according to JIS Z0237: 1999.

粘着テープの粘着力は、剥離温度及び剥離速度と相関性があることはよく知られている。つまり、剥離温度を下げて粘着力を測定することは、剥離速度を速くして測定することと同じである。一方、剥離温度を上げて測定することは、剥離速度を遅くして測定することと同じである。また、粘着テープの剥離速度を速くすると、その剥離形態が徐々に変化することもよく知られている。つまり、剥離速度が遅い場合、剥離過程は、粘着剤層が延ばされながら凝集破壊することが支配的である。剥離速度が速くなるにつれ、粘着層の延びが少なくなり、接着界面からの剥離へと移行し、さらに剥離速度が速くなると、粘着剤の変形はなく、脆性破壊的に被着体界面から剥離する。   It is well known that the adhesive strength of an adhesive tape has a correlation with the peeling temperature and the peeling speed. That is, lowering the peeling temperature and measuring the adhesive strength is the same as measuring with a higher peeling speed. On the other hand, increasing the peeling temperature and measuring is the same as measuring with a slow peeling speed. It is also well known that when the peeling speed of the adhesive tape is increased, the peeling form gradually changes. That is, when the peeling speed is slow, the peeling process is dominantly caused by cohesive failure while the pressure-sensitive adhesive layer is extended. As the peeling speed increases, the pressure-sensitive adhesive layer extends less and shifts to peeling from the adhesive interface. When the peeling speed increases further, there is no deformation of the pressure-sensitive adhesive, and the brittle fracture breaks away from the adherend interface. .

粘着テープ貼り付け済みのリードフレームから粘着テープが剥離する現象は、輸送中及び半導体装置製造会社でのハンドリング時の衝撃又は振動をきっかけとして粘着テープとリードフレームとの接着部分に応力を発生させ、その応力によって高速で粘着テープを剥離する場合と同様であると考えられる。従って、剥離速度及び剥離温度の相関性より、高速での剥離強度を、低温での粘着力と関連付けて、低温での粘着力を確保することにより、上述した衝撃及び振動による粘着テープの剥離を有効に防止することができる。その結果、貼り付け及び剥離を確実に制御することが可能となる。   The phenomenon that the adhesive tape peels off from the lead frame with the adhesive tape affixed is caused by the stress or vibration at the time of transportation and handling at the semiconductor device manufacturer, causing stress to the adhesive tape and the lead frame. This is considered to be the same as when the adhesive tape is peeled off at a high speed due to the stress. Therefore, from the correlation between the peeling speed and the peeling temperature, the peeling strength of the adhesive tape at the low temperature can be secured by associating the peeling strength at high speed with the adhesive strength at low temperature, thereby ensuring the peeling strength at low temperature. It can be effectively prevented. As a result, it is possible to reliably control sticking and peeling.

一方、粘着テープは、まず、リードフレームに貼着され、任意の段階でリードフレームから剥離されるが、あまりに強粘着力を有する場合は、引き剥がしが困難となるだけでなく、場合によっては引き剥がしのための応力によって、モールドした樹脂の剥離、破損を招く。従って、封止樹脂のはみ出しを抑える粘着力以上に強粘着であることはむしろ好ましくない。例えば、半導体装置の製造工程において、ＪＩＳ Ｚ０２３７：１９９９に準拠した粘着力が０．０１〜１０．０Ｎ／１９ｍｍ程度であることが適している。さらに、２００℃にて１時間加熱した後のリードフレームへの粘着力が、０．０５〜４．０Ｎ／１９ｍｍ幅程度であることが好ましく、０．１〜２．０Ｎ／１９ｍｍ幅程度であることがより好ましい。   On the other hand, the adhesive tape is first affixed to the lead frame and peeled off from the lead frame at an arbitrary stage. However, if the adhesive tape has an excessively strong adhesive strength, it is not only difficult to peel off, but also depending on the case. The stress for peeling causes peeling and breakage of the molded resin. Therefore, it is rather unfavorable that the adhesive strength is higher than the adhesive strength that suppresses the protrusion of the sealing resin. For example, in the semiconductor device manufacturing process, it is suitable that the adhesive strength based on JIS Z0237: 1999 is about 0.01 to 10.0 N / 19 mm. Further, the adhesive strength to the lead frame after heating at 200 ° C. for 1 hour is preferably about 0.05 to 4.0 N / 19 mm width, and about 0.1 to 2.0 N / 19 mm width. It is more preferable.

また、粘着剤層は、０℃での貯蔵弾性率が５×１０６Ｐａ以下であることが適しており、３×１０６Ｐａ以下が好ましい。貯蔵弾性率をこの範囲とすることにより、粘着剤の濡れ性を低下させることなく、適当な粘着力を得ることができる。ここで、貯蔵弾性率とは、せん断での貯蔵弾性率であり、Ｒｈｅｏｍｅｔｒｉｃ Ｓｃｉｅｎｔｉｆｉｃ 社製の粘弾性スペクトロメーター（ＡＲＥＳ）を用いて、チャック圧１００ｇ重、周波数１Ｈｚに設定して測定することによって、０℃における貯蔵弾性率として求めた値である。 The pressure-sensitive adhesive layer preferably has a storage elastic modulus at 0 ° C. of 5 × 10 6 Pa or less, and preferably 3 × 10 6 Pa or less. By setting the storage elastic modulus within this range, an appropriate adhesive force can be obtained without reducing the wettability of the adhesive. Here, the storage elastic modulus is a storage elastic modulus in shear, and by using a viscoelastic spectrometer (ARES) manufactured by Rheometric Scientific, setting the chuck pressure to 100 g weight and the frequency to 1 Hz, This is a value obtained as a storage elastic modulus at 0 ° C.

さらに、粘着剤層は、ガラス転移温度が−５℃以下であることが適しており、−１０℃以下であることが好ましい。Ｔｇをこの範囲とすることにより、低温での貼り付け性を向上させ、衝撃応力での脆性破壊を防止することができる。   Further, the pressure-sensitive adhesive layer suitably has a glass transition temperature of −5 ° C. or lower, and preferably −10 ° C. or lower. By setting Tg within this range, it is possible to improve sticking properties at low temperatures and prevent brittle fracture due to impact stress.

粘着剤層を構成する粘着剤としては、例えば、アクリル系粘着剤、シリコーン系粘着剤、ゴム系粘着剤、エポキシ系粘着剤等の各種粘着剤が挙げられる。
アクリル系粘着剤は、例えば、アルキル（メタ）アクリレートを少なくとも含むモノマーの共重合から得られたアクリル系共重合体からなるものが挙げられる。なお、本明細書において、アルキル（メタ）アクリレートとは、アルキルアクリレート及び／又はアルキルメタクリレートを意味する。
アルキル（メタ）アクリレートとしては、メチル（メタ）アクリレート、エチル（メタ）アクリレート、ブチル（メタ）アクリレート、イソアミル（メタ）アクリレート、ｎ−ヘキシル（メタ）アクリレート、２−エチルヘキシル（メタ）アクリレート、イソオクチル（メタ）アクリレート、イソノニル（メタ）アクリレート、デシシル（メタ）アクリレート、ドデシル（メタ）アクリレート等が挙げられる。なかでも、アクリル酸モノマーと、２−エチルヘキシル（メタ）アクリレートモノマーとの共重合、メチル及び／又はエチル（メタ）アクリレートと、アクリル酸モノマーと、２−エチルヘキシル（メタ）アクリレートモノマーとの共重合が好ましい。 As an adhesive which comprises an adhesive layer, various adhesives, such as an acrylic adhesive, a silicone adhesive, a rubber adhesive, an epoxy adhesive, are mentioned, for example.
Examples of the acrylic pressure-sensitive adhesive include those made of an acrylic copolymer obtained by copolymerization of a monomer containing at least an alkyl (meth) acrylate. In addition, in this specification, alkyl (meth) acrylate means alkyl acrylate and / or alkyl methacrylate.
Examples of the alkyl (meth) acrylate include methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, isoamyl (meth) acrylate, n-hexyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, isooctyl ( Examples include meth) acrylate, isononyl (meth) acrylate, decyl (meth) acrylate, and dodecyl (meth) acrylate. Among them, copolymerization of acrylic acid monomer and 2-ethylhexyl (meth) acrylate monomer, copolymerization of methyl and / or ethyl (meth) acrylate, acrylic acid monomer and 2-ethylhexyl (meth) acrylate monomer preferable.

粘着剤層、特に、アクリル系粘着剤を含有する粘着剤層には、架橋剤を含有していてもよい。
架橋剤としては、例えば、イソシアネート架橋剤、エポキシ架橋剤、アジリジン系化合物、キレート系架橋剤等が挙げられる。
架橋剤の含有量は特に限定されないが、例えば、アクリル系粘着剤を用いる場合には、アクリル系ポリマー１００重量部に対して０．１〜１５重量部が適しており、０．５〜１０重量部が好ましい。架橋剤をこの範囲で用いることにより、粘着剤層の粘弾性を適度に設定することができ、導電性パターン又は封止樹脂に対する粘着剤層の適度の粘着力を確保することができる。よって、粘着テープの剥離時においても、封止樹脂を剥離又は破損したり、粘着剤層の一部が導電性パターン又は封止樹脂に付着することはない。さらに、粘着剤層の過度の硬化を抑制することができる。 The pressure-sensitive adhesive layer, particularly the pressure-sensitive adhesive layer containing an acrylic pressure-sensitive adhesive, may contain a crosslinking agent.
Examples of the crosslinking agent include an isocyanate crosslinking agent, an epoxy crosslinking agent, an aziridine compound, a chelate crosslinking agent, and the like.
Although content of a crosslinking agent is not specifically limited, For example, when using an acrylic adhesive, 0.1-15 weight part is suitable with respect to 100 weight part of acrylic polymers, 0.5-10 weight Part is preferred. By using a crosslinking agent in this range, the viscoelasticity of the pressure-sensitive adhesive layer can be appropriately set, and an appropriate pressure-sensitive adhesive force of the pressure-sensitive adhesive layer with respect to the conductive pattern or the sealing resin can be ensured. Therefore, even when the pressure-sensitive adhesive tape is peeled off, the sealing resin is not peeled or damaged, or a part of the pressure-sensitive adhesive layer does not adhere to the conductive pattern or the sealing resin. Furthermore, excessive curing of the pressure-sensitive adhesive layer can be suppressed.

粘着剤層には、さらに、可塑剤、顔料、染料、老化防止剤、帯電防止剤、弾性率等の粘着剤層の物性改善のために加えられる充填剤等、当該分野で通常使用される各種添加剤を添加してもよい。
粘着剤層は、接着剤成分を調製し、これを基材層に塗布／乾燥することにより形成することができる。接着剤成分の塗布方法としては、バーコーター塗工、エアナイフ塗工、グラビア塗工、グラビアリバース塗工、リバースロール塗工、リップ塗工、ダイ塗工、ディップ塗工、オフセット印刷、フレキソ印刷、スクリーン印刷など種々の方法を採用することができる。また、別途、剥離ライナーに粘着剤層を形成した後、それを基材フィルムに貼り合せる方法等を採用してもよい。
粘着剤層の厚みは、リードフレームとの十分な粘着力の観点からは、好ましくは、２μｍ以上、より好ましくは３μｍ以上、更に好ましくは４μｍ以上であり、一方、十分なワイヤーボンディング性の観点からは、好ましくは５０μｍ以下、より好ましくは４０μｍ以下、更に好ましくは３０μｍ以下である。 The pressure-sensitive adhesive layer further includes plasticizers, pigments, dyes, anti-aging agents, antistatic agents, fillers added to improve the physical properties of the pressure-sensitive adhesive layer such as elastic modulus, and the like, which are usually used in the field. Additives may be added.
The pressure-sensitive adhesive layer can be formed by preparing an adhesive component and applying / drying it to the base material layer. Application methods for adhesive components include bar coater coating, air knife coating, gravure coating, gravure reverse coating, reverse roll coating, lip coating, die coating, dip coating, offset printing, flexographic printing, Various methods such as screen printing can be employed. Moreover, after forming an adhesive layer in a release liner separately, you may employ | adopt the method of bonding it to a base film.
The thickness of the pressure-sensitive adhesive layer is preferably 2 μm or more, more preferably 3 μm or more, and further preferably 4 μm or more from the viewpoint of sufficient adhesive strength with the lead frame, while from the viewpoint of sufficient wire bonding properties. Is preferably 50 μm or less, more preferably 40 μm or less, and still more preferably 30 μm or less.

本発明の粘着テープは、さらに、剥離シートを備えていることが好ましい。剥離シートは、粘着剤層を保護するために粘着剤層に接触して形成されているシートである。
剥離シートは、当該分野で一般的に用いられている材料、例えば、ポリ塩化ビニル、ポリ塩化ビニリデン、ポリエチレンテレフタレートなどのポリエステル、ポリイミド、ポリエーテルエーテルケトン；低密度ポリエチレン、直鎖状ポリエチレン、中密度ポリエチレン、高密度ポリエチレン、超低密度ポリエチレン、ランダム共重合ポリプロピレン、ブロック共重合ポリプロピレン、ホモポリプロレン、ポリブテン、ポリメチルペンテン等のポリオレフィン；ポリウレタン、エチレン−酢酸ビニル共重合体、アイオノマー樹脂、エチレン−（メタ）アクリル酸共重合体、エチレン−（メタ）アクリル酸エステル（ランダム、交互）共重合体、エチレン−ブテン共重合体、エチレン−ヘキセン共重合体、フッ素樹脂、セルロース系樹脂及びこれらの架橋体などのポリマー等を用いて、単層又は多層構造で形成された剥離基材を含む。 The pressure-sensitive adhesive tape of the present invention preferably further comprises a release sheet. The release sheet is a sheet formed in contact with the pressure-sensitive adhesive layer in order to protect the pressure-sensitive adhesive layer.
The release sheet is made of a material generally used in the art, for example, polyester such as polyvinyl chloride, polyvinylidene chloride, polyethylene terephthalate, polyimide, polyether ether ketone; low density polyethylene, linear polyethylene, medium density. Polyolefins such as polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolyprolene, polybutene, polymethylpentene; polyurethane, ethylene-vinyl acetate copolymer, ionomer resin, ethylene- ( (Meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, fluororesin, cellulose resin and the like Using a cross-linked polymer such as such, including single layer or a release substrate, which is formed in a multilayer structure.

また、剥離シートは、剥離基材の少なくとも粘着剤層と接触する面に、粘着剤層と実質的に接着しないように、離型処理が施されているものが適している。離型処理は、当該分野で公知の方法及び材料を用いて行うことができる。例えば、シリコン樹脂による処理、フッ素樹脂による離型処理等が挙げられる。具体的には、セラピール・シリーズ（東レフィルム加工株式会社）の軽剥離グレード及び中剥離グレード等が例示される。   In addition, the release sheet is suitably subjected to a release treatment so that at least the surface of the release substrate that comes into contact with the adhesive layer is not substantially bonded to the adhesive layer. The mold release treatment can be performed using methods and materials known in the art. For example, the process by a silicon resin, the mold release process by a fluororesin, etc. are mentioned. Specifically, the light release grade and medium release grade of Therapy Series (Toray Film Processing Co., Ltd.) are exemplified.

本発明の粘着テープは、半導体装置の製造に、特に、樹脂封止する際に使用される粘着テープである。つまり、リードフレーム表面に搭載された半導体チップを樹脂封止する際にリードフレームの裏面（半導体チップが搭載された面と反対側の面、以下同じ）に貼着され、封止後に剥離するために用いられる。
例えば、リードフレームの裏面に本発明の粘着テープを貼り合わせ、このダイパッド表面に半導体チップを搭載し、半導体チップ側を封止樹脂により封止し、封止後に粘着テープを剥離する工程を含む半導体装置の製造方法において使用するためのものである。 The pressure-sensitive adhesive tape of the present invention is a pressure-sensitive adhesive tape used for manufacturing a semiconductor device, particularly when resin-sealing. That is, when the semiconductor chip mounted on the surface of the lead frame is resin-sealed, it is attached to the back surface of the lead frame (the surface opposite to the surface on which the semiconductor chip is mounted, hereinafter the same), and peels off after sealing Used for.
For example, a semiconductor including a step of attaching the adhesive tape of the present invention to the back surface of a lead frame, mounting a semiconductor chip on the die pad surface, sealing the semiconductor chip side with a sealing resin, and peeling the adhesive tape after sealing It is for use in a method of manufacturing a device.

具体的には、まず、図１（ａ）に示すように、本発明の粘着テープ２０を、リードフレーム１１の一面、つまり、裏面に貼り付ける。
リードフレーム１１は、通常、Ｃｕ系素材（Ｃｕ−Ｆｅ−Ｐなど）、Ｆｅ系素材(Ｆｅ−Ｎｉなど)等の金属板によって形成されている。特に、リードフレーム内の電気接点部分（後述する半導体チップとの接続部分）に、銀、ニッケル、パラジウム、金等で被覆（めっき）されているものが好ましい。リードフレーム１１の厚みは、通常、１００〜３００μｍ程度が挙げられる。 Specifically, first, as shown in FIG. 1A, the adhesive tape 20 of the present invention is attached to one surface of the lead frame 11, that is, the back surface.
The lead frame 11 is usually formed of a metal plate such as a Cu-based material (such as Cu—Fe—P) or an Fe-based material (such as Fe—Ni). In particular, it is preferable that an electrical contact portion (connection portion with a semiconductor chip described later) in the lead frame is coated (plated) with silver, nickel, palladium, gold or the like. As for the thickness of the lead frame 11, about 100-300 micrometers is mentioned normally.

リードフレーム１１は、後の切断工程にて切り分けやすいよう、所定の配置パターン（例えば、個々のＱＦＮの配置パターン）が複数並べられているものが好ましい。具体的には、図２（ａ）及び（ｂ）に示すように、リードフレーム１１上に、マトリックス状にパッケージパターン領域１０が配列されたものが、マトリックスＱＦＮ、ＭＡＰ−ＱＦＮ等と呼ばれ、もっとも好ましいもののひとつである。   The lead frame 11 is preferably one in which a plurality of predetermined arrangement patterns (for example, individual QFN arrangement patterns) are arranged so as to be easily separated in a subsequent cutting step. Specifically, as shown in FIGS. 2A and 2B, a package pattern region 10 arranged in a matrix on the lead frame 11 is called a matrix QFN, MAP-QFN, or the like. One of the most preferred.

リードフレーム１１は、通常、ダイパッド１１ｃ及びリード端子１１ｂを備える。これらは分離して備えられていてもよいが、図２（ｂ）に示すように、隣接した複数の開口１１ａによって規定された複数リード端子１１ｂと、開口１１ａの中央に配列されたダイパッド１１ｃと、任意に、ダイパッド１１ｃを開口１１ａの４角に支持するダイバー１１ｄとによって、一体的に備えられているものが好ましい。なお、ダイパッド１１ｃ及びリード端子１１ｂ等は、放熱等の別の機能が意図されたものとして形成されていてもよい。   The lead frame 11 usually includes a die pad 11c and lead terminals 11b. Although these may be provided separately, as shown in FIG. 2B, a plurality of lead terminals 11b defined by a plurality of adjacent openings 11a, and a die pad 11c arranged in the center of the openings 11a, Optionally, it is preferable that the die pad 11c is integrally provided by a diver 11d that supports the four corners of the opening 11a. Note that the die pad 11c, the lead terminal 11b, and the like may be formed as those intended for other functions such as heat dissipation.

粘着テープ２０のリードフレーム１１への貼り付けは、少なくとも、リードフレーム１１におけるパッケージパターン領域１０に、リードフレーム１１のパッケージパターン領域１０より外側の領域、つまり、樹脂封止される樹脂封止領域の外側の全周を含む領域に又はパッケージパターン領域１０及びパッケージパターン領域１０の外側の全周を含む領域に行われることが適している。   The adhesive tape 20 is attached to the lead frame 11 at least in the package pattern region 10 of the lead frame 11 in the region outside the package pattern region 10 of the lead frame 11, that is, the resin-sealed region to be resin-sealed. It is suitable to be performed in a region including the entire outer periphery or a region including the entire outer periphery of the package pattern region 10 and the package pattern region 10.

リードフレーム１０は、通常、樹脂封止時の位置決めを行うためのガイドピン用孔（例えば、図２（ａ）の１３）を端辺近傍に有しているため、それを塞がない領域に粘着テープを貼着するのが好ましい。また、パッケージパターン領域１０はリードフレーム１１の長手方向に複数配置されるため、それらの複数領域におよぶように連続して粘着テープ２０を貼着するのが好ましい。   The lead frame 10 usually has a guide pin hole (for example, 13 in FIG. 2A) for positioning at the time of resin sealing in the vicinity of the end side. It is preferable to stick an adhesive tape. In addition, since a plurality of package pattern regions 10 are arranged in the longitudinal direction of the lead frame 11, it is preferable to stick the adhesive tape 20 continuously over the plurality of regions.

次いで、図１（ｂ）に示すように、リードフレーム１１表面（粘着テープ２０が貼り付けられていない面）に、半導体チップ１５を搭載する。
通常、上述したように、リードフレーム１１は、半導体チップ１５を固定するためダイパッド１１ｃと呼ばれる固定エリアが設けられていることから、半導体チップ１５は、ダイパッド１１ｃ上に搭載される。
ダイパッド１１ｃヘの半導体チップ１５の搭載は、例えば、導電性ペースト１９、接着テープ、接着剤（例えば、熱硬化性接着剤）等を用いる各種の方法が利用される。導電性ペースト、接着剤等を用いて搭載する場合、通常、１５０〜２００℃程度の温度で３０分〜９０分間程度、加熱キュアされる。 Next, as shown in FIG. 1B, the semiconductor chip 15 is mounted on the surface of the lead frame 11 (the surface where the adhesive tape 20 is not attached).
Normally, as described above, the lead frame 11 is provided with a fixing area called a die pad 11c for fixing the semiconductor chip 15, so that the semiconductor chip 15 is mounted on the die pad 11c.
For mounting the semiconductor chip 15 on the die pad 11c, for example, various methods using a conductive paste 19, an adhesive tape, an adhesive (for example, a thermosetting adhesive), and the like are used. When mounting using a conductive paste, an adhesive, or the like, it is usually heated and cured at a temperature of about 150 to 200 ° C. for about 30 to 90 minutes.

続いて、任意に、図１（ｃ）に示すように、半導体チップ１５表面の電極パッド（図示せず）と、リードフレーム１１とをワイヤボンドする。
ワイヤボンドは、ボンディングワイヤ１６、例えば、金線又はアルミ線などによって行われる。通常、１５０〜２５０℃に加熱した状態で、超音波による振動エネルギーと印加加圧による圧着エネルギーとの併用により行われる。 Subsequently, as shown in FIG. 1C, an electrode pad (not shown) on the surface of the semiconductor chip 15 and the lead frame 11 are optionally wire-bonded.
Wire bonding is performed by the bonding wire 16, for example, a gold wire or an aluminum wire. Usually, the heating is performed at 150 to 250 ° C. by using the vibration energy by ultrasonic waves and the pressure energy by applying pressure.

半導体チップの封止は、リードフレーム１０に搭載された半導体チップ１５及びボンディングワイヤ１６を保護するために行われる。例えば、エポキシ系樹脂等を用いて、金型中で成型されるのが代表的な方法である。この場合、複数のキャビティを有する上金型と下金型とからなる金型を用いて、複数の半導体チップを同時に封止することが好ましい。通常、樹脂封止時の加熱温度は１７０〜１８０℃程度であり、この温度で数分間キュアした後、さらに、ポストモールドキュアを数時間行う。
その後、図１（ｄ）に示すように、封止樹脂１７を含むリードフレーム１０を金型から取り出す。 The sealing of the semiconductor chip is performed to protect the semiconductor chip 15 and the bonding wire 16 mounted on the lead frame 10. For example, a typical method is to mold in a mold using an epoxy resin or the like. In this case, it is preferable to simultaneously seal a plurality of semiconductor chips using a mold including an upper mold and a lower mold having a plurality of cavities. Usually, the heating temperature at the time of resin sealing is about 170 to 180 ° C. After curing at this temperature for several minutes, post mold curing is further performed for several hours.
Thereafter, as shown in FIG. 1D, the lead frame 10 including the sealing resin 17 is taken out from the mold.

図１（ｅ）に示すように、リードフレーム１１裏面に貼り付けられた粘着テープを剥離する。
封止後の粘着テープ２０の剥離は、上述したポストモールドキュアの前に行うことが好ましい。 As shown in FIG.1 (e), the adhesive tape affixed on the back surface of the lead frame 11 is peeled.
Peeling of the adhesive tape 20 after sealing is preferably performed before the post mold cure described above.

その後、図１（ｆ）に示すように、封止樹脂１７を含むリードフレーム１１を、半導体チップ１５ごとに分割し、半導体装置２１を得ることができる。
半導体チップ１５ごとの分割は、ダイサー等の回転切断刃等を用いて行うことができる。 Thereafter, as shown in FIG. 1 (f), the lead frame 11 including the sealing resin 17 can be divided for each semiconductor chip 15 to obtain the semiconductor device 21.
The division for each semiconductor chip 15 can be performed using a rotary cutting blade such as a dicer.

なお、本発明の粘着テープは、半導体チップの樹脂封止の際に、リードフレームの一面、好ましくは裏面に貼着されていればよく、上述した図１（ａ）〜図１（ｃ）の工程について、半導体チップを搭載した後粘着テープを貼り付けてもよく、半導体チップをワイヤボンドした後粘着テープを貼り付けてもよい。特に、上述した図１（ａ）〜図１（ｃ）の順序で行うことが好ましい。また、半導体チップの構造によっては、ワイヤボンドを行わなくてもよい。   In addition, the adhesive tape of this invention should just be affixed on the one surface of the lead frame, Preferably the back surface at the time of resin sealing of a semiconductor chip, and the above-mentioned FIG. 1 (a)-FIG.1 (c). About a process, an adhesive tape may be affixed after mounting a semiconductor chip, and an adhesive tape may be affixed after wire-bonding a semiconductor chip. In particular, it is preferable to carry out in the order shown in FIGS. 1 (a) to 1 (c). Further, depending on the structure of the semiconductor chip, wire bonding may not be performed.

本発明の粘着テープは、リードフレームの少なくとも一面への貼着の後、粘着テープの剥離の前において、粘着テープ貼着リードフレームを室温以下、２０℃以下、１０℃以下、０℃程度の雰囲気下に保持する工程を含むことが好ましい。つまり、粘着テープが貼着された状態のリードフレームの、粘着テープ貼り付けラインから、半導体装置の封止ラインへ、あるいは、リードフレームメーカから半導体装置メーカへの搬送等を含み、このような搬送によって、粘着テープ貼着リードフレームが室温等より低い温度にさらされる工程を含む場合に、特に本発明の粘着テープは有効である。低温での粘着力を確保することができ、輸送等の間の振動又は衝撃等によって粘着テープの剥がれ及びずれ等を確実に防止することができる。   The pressure-sensitive adhesive tape of the present invention has an atmosphere in which the pressure-sensitive adhesive tape-bonded lead frame is at room temperature or lower, 20 ° C. or lower, 10 ° C. or lower, and about 0 ° C. It is preferred to include a step of holding it down. In other words, including the transportation of the lead frame with the adhesive tape attached from the adhesive tape application line to the semiconductor device sealing line or from the lead frame manufacturer to the semiconductor device manufacturer. Therefore, the adhesive tape of the present invention is particularly effective when the adhesive tape-attached lead frame includes a step of being exposed to a temperature lower than room temperature. Adhesive strength at low temperatures can be ensured, and peeling or shifting of the adhesive tape can be reliably prevented by vibration or impact during transportation or the like.

実施例１
２５μｍ厚のポリイミドフィルム（東レデュポン製：カプトン１００Ｈ）を基材層として用いた。この基材層の上に、シリコーン系粘着剤（東レダウコーニングシリコーン社製：ＳＤ４５８７Ｌ）１００重量部に白金触媒３重量部を均一に混ぜ合わせ、塗布して乾燥し、厚さ約１０μｍの粘着剤層を有する粘着テープを作製した。
粘着剤の０℃での貯蔵弾性率を測定したところ、２．８×１０５Ｐａ以下であり、ガラス転移温度は−７０℃以下であった。
また、この基材のＴｇをＴＭＡ法にて測定したところ、３００℃以下で明確なＴｇは確認されなかった。
この粘着テープを、銅製のリードフレームの裏面側に、ハンドローラーを用いて０℃にて貼り合わせた。リードフレームは、リード端子に銀めっきが施された一辺１６ＰｉｎタイプのＱＦＮが４個×４個配列したものを用いた。
また、同様にしてリードフレームと同一素材の銅板を用いて、粘着力測定用サンプルを作製した。 Example 1
A polyimide film having a thickness of 25 μm (manufactured by Toray DuPont: Kapton 100H) was used as the base material layer. On this base material layer, 100 parts by weight of a silicone-based adhesive (manufactured by Toray Dow Corning Silicone Co., Ltd .: SD4587L) is mixed with 3 parts by weight of a platinum catalyst, coated and dried, and an adhesive having a thickness of about 10 μm. An adhesive tape having a layer was prepared.
When the storage elastic modulus at 0 ° C. of the pressure-sensitive adhesive was measured, it was 2.8 × 10 5 Pa or less, and the glass transition temperature was −70 ° C. or less.
Moreover, when Tg of this base material was measured by TMA method, clear Tg was not confirmed below 300 degreeC.
This adhesive tape was bonded to the back side of a copper lead frame at 0 ° C. using a hand roller. The lead frame used was a 4 × 4 array of 16pin side QFNs with silver plating on the lead terminals.
Similarly, a sample for measuring adhesive strength was prepared using a copper plate made of the same material as the lead frame.

次に、テープ貼り付け済みリードフレームに応力を与えるため、高さ１ｍから、地面（コンクリート）に１０回落下させた。
その後、リードフレームを２００℃にて約１時間キュアした。
続いて、ワイヤボンダ（日本アビオニックス製：ＭＢ−２２００）を用いて、ダイパッドへのボンド荷重３０ｇｆ、ダイパッドへのボンド時間１００ｍ秒、リードパッドへのボンド荷重２００ｇｆ、リードパッドへのボンド時間１００ｍ秒、ボンド温度２２５℃にて、ワイヤボンディングを行った。 Next, in order to apply stress to the tape-attached lead frame, it was dropped 10 times from the height of 1 m onto the ground (concrete).
Thereafter, the lead frame was cured at 200 ° C. for about 1 hour.
Subsequently, using a wire bonder (manufactured by Nippon Avionics: MB-2200), the bond load to the die pad is 30 gf, the bond time to the die pad is 100 ms, the bond load to the lead pad is 200 gf, the bond time to the lead pad is 100 ms, Wire bonding was performed at a bond temperature of 225 ° C.

さらに、エポキシ系封止樹脂（日東電工製：ＨＣ−３００Ｂ６）をモールドマシン（ＴＯＷＡ製Ｍｏｄｅｌ−Ｙ−ｓｅｒｉｓｅ）を用いて、１７５℃で、プレヒート設定３秒、インジェクション時間１２秒、キュア時間９０秒にてモールドした。
その後、リードルフレームから粘着テープを剥離してＱＦＮパッケージを作製し、樹脂漏れを確認した。 Furthermore, epoxy type sealing resin (manufactured by Nitto Denko: HC-300B6) is used at 175 ° C. with a molding machine (Model-Y-series manufactured by TOWA), preheating setting is 3 seconds, injection time is 12 seconds, and curing time is 90 seconds. Molded with
Thereafter, the adhesive tape was peeled from the lead frame to produce a QFN package, and resin leakage was confirmed.

実施例２
２５μｍ厚のポリイミドフィルム（東レデュポン製：カプトン１００Ｈ）を基材層として用いた。
２−エチルヘキシルアクリレートモノマー１００重量部に対して、構成モノマーとしてのアクリル酸モノマーを５重量部配合して、アクリル系共重合体を得た。このアクリル系共重合体１００重量部に対して、エポキシ系架橋剤（三菱ガス化学製：Ｔｅｔｒａｄ‐Ｃ）を０．６重量部、イソシアネート系架橋剤（日本ポリウレタン製：コロネート−Ｌ）２重量部を添加して、粘着剤組成物を調製した。
粘着剤の０℃での貯蔵弾性率を測定したところ、２．１×１０５Ｐａ以下であり、ガラス転移温度は、実質的に２−エチルヘキシルアクリレートモノマーと同程度であり、−３７℃以下であった。
以後、実施例１と同様の方法でＱＦＮパッケージ及び粘着力測定用サンプルを作製した。 Example 2
A polyimide film having a thickness of 25 μm (manufactured by Toray DuPont: Kapton 100H) was used as the base material layer.
An acrylic copolymer was obtained by blending 5 parts by weight of an acrylic acid monomer as a constituent monomer with respect to 100 parts by weight of 2-ethylhexyl acrylate monomer. 0.6 parts by weight of an epoxy crosslinking agent (Mitsubishi Gas Chemical: Tetrad-C) and 2 parts by weight of an isocyanate crosslinking agent (Nihon Polyurethane: Coronate-L) per 100 parts by weight of this acrylic copolymer Was added to prepare a pressure-sensitive adhesive composition.
The storage elastic modulus at 0 ° C. of the pressure-sensitive adhesive was measured to be 2.1 × 10 5 Pa or less, the glass transition temperature was substantially the same as that of 2-ethylhexyl acrylate monomer, and −37 ° C. or less. there were.
Thereafter, a QFN package and an adhesive force measurement sample were produced in the same manner as in Example 1.

比較例１
基材層として、厚み２５μｍのポリエチレンテレフタレート（東レ社製「ルミラーＳ１０」、Ｔｇ＝６９℃）を用いた。
実施例１と同様の方法でＱＦＮパッケージ及び粘着力測定用サンプルを作製した。 Comparative Example 1
As the base material layer, polyethylene terephthalate having a thickness of 25 μm (“Lumirror S10” manufactured by Toray Industries, Inc., Tg = 69 ° C.) was used.
A QFN package and an adhesive force measurement sample were produced in the same manner as in Example 1.

比較例２
粘着剤として、熱圧着型可塑性粘着剤（熱可塑性ＳＥＢＳ系樹脂、０℃の貯蔵弾性率：３．６×１０７Ｐａ、Ｔｇ＝８０℃）を用いる以外は実施例１と同様の方法でＱＦＮパッケージ及び粘着力測定用サンプルを作製した。
なお、常温では貼り付かないため、リードフレームへは、１００℃×０．３ＭＰａにて貼り付けたもので樹脂漏れ性とＷ/Ｂの試験を行った。 Comparative Example 2
QFN was used in the same manner as in Example 1 except that a thermocompression-bonding type plastic pressure-sensitive adhesive (thermoplastic SEBS resin, storage elastic modulus at 0 ° C .: 3.6 × 10 7 Pa, Tg = 80 ° C.) was used as the pressure-sensitive adhesive. A package and a sample for measuring adhesive strength were prepared.
In addition, since it did not stick at normal temperature, the resin leakage property and W / B test were performed on the lead frame pasted at 100 ° C. × 0.3 MPa.

実施例及び比較例の粘着テープ及びテープ付きリードフレームサンプルにおいて、０℃雰囲気下での粘着力及び樹脂漏れ性を評価した。
粘着力は、ＪＩＳ Ｚ０２３７：１９９９に則って測定した。つまり、１８０°引き剥がし法（１９ｍｍ幅）、０℃±３℃（５０±５％ＲＨ）、剥離速度３００ｍｍ／分、被着体：リードフレームの条件下で測定した。
樹脂漏れは、まずは目視で確認し、樹脂漏れが確認できなかったものは、さらに顕微鏡で１００倍に拡大して確認した。
これらの結果を表１に示す。

Figure 0005548077
表１から、実施例では、目視による剥がれは認められず、封止後において、樹脂漏れは発生していなかった。
一方、比較例１では、落下衝撃後の剥れは、目視及び顕微鏡観察のいずれにおいても認められなかったが、２００℃加熱時にＰＥＴの収縮の影響により、リードフレームの剥れが生じ、樹脂漏れが発生した。 In the pressure-sensitive adhesive tapes and the lead frame samples with tapes of Examples and Comparative Examples, the adhesive strength and the resin leakage property under an atmosphere of 0 ° C. were evaluated.
The adhesive strength was measured according to JIS Z0237: 1999. That is, the measurement was performed under the conditions of 180 ° peeling method (19 mm width), 0 ° C. ± 3 ° C. (50 ± 5% RH), peeling speed of 300 mm / min, adherend: lead frame.
First, the resin leakage was visually confirmed, and those in which the resin leakage could not be confirmed were further magnified 100 times with a microscope.
These results are shown in Table 1.
Figure 0005548077
 From Table 1, in the Example, peeling by visual observation was not recognized and the resin leak did not generate | occur | produce after sealing.
On the other hand, in Comparative Example 1, peeling after the drop impact was not observed either visually or under a microscope. However, the lead frame peeled off due to the shrinkage of PET when heated at 200 ° C., resulting in resin leakage. There has occurred.

本発明の粘着テープは、半導体装置の製造方法において広範に用いることができる。   The pressure-sensitive adhesive tape of the present invention can be widely used in a method for manufacturing a semiconductor device.

１０ パッケージパターン領域
１１ リードフレーム
１１ａ 開口
１１ｂ リード端子
１１ｃ ダイパッド
１５ 半導体チップ
１６ ボンディングワイヤ
１７ 封止樹脂
２０ 粘着テープ
２１ 半導体装置 DESCRIPTION OF SYMBOLS 10 Package pattern area | region 11 Lead frame 11a Opening 11b Lead terminal 11c Die pad 15 Semiconductor chip 16 Bonding wire 17 Sealing resin 20 Adhesive tape 21 Semiconductor device

Claims (4)

基材層と該基材層上に積層された粘着剤層とを備え、
前記粘着剤層は、０℃雰囲気下の１８０°剥離でのリードフレームへの粘着力０．０１〜１０．０Ｎ／１９ｍｍ幅を有し、かつガラス転移温度−５℃以下を有し、
前記基材層は、３００℃以下にガラス転移温度を有さないことを特徴とする樹脂封止型半導体装置の製造における樹脂封止用粘着テープ。 Comprising a base material layer and an adhesive layer laminated on the base material layer,
The pressure-sensitive adhesive layer, have a adhesion 0.01~10.0N / 19mm width to the lead frame at 180 ° peel under 0 ℃ atmosphere, and has a glass transition temperature of -5 ° C. or less,
The said base material layer does not have a glass transition temperature below 300 degreeC, The adhesive tape for resin sealing in manufacture of the resin sealing type semiconductor device characterized by the above-mentioned . リードフレーム表面に搭載された半導体チップを樹脂封止する際に前記リードフレームの少なくとも一面に貼着され、封止後に剥離するために用いられる請求項１に記載の粘着テープ。   The pressure-sensitive adhesive tape according to claim 1, wherein the adhesive tape is attached to at least one surface of the lead frame when the semiconductor chip mounted on the surface of the lead frame is resin-sealed, and is used for peeling after sealing. 粘着剤層は、０℃での貯蔵弾性率５×１０６Ｐａ以下を有する請求項１又は２に記載の粘着テープ。 The pressure-sensitive adhesive layer according to claim 1, wherein the pressure-sensitive adhesive layer has a storage elastic modulus at 0 ° C. of 5 × 10 6 Pa or less. リードフレームの少なくとも一面に、請求項１〜３のいずれか１つに記載の粘着テープを貼着し、
前記リードフレーム上に半導体チップを搭載し、
該半導体チップ側を封止樹脂により封止し、
封止後に前記粘着テープを剥離する工程を含むことを特徴とする樹脂封止型半導体装置の製造方法。 The adhesive tape according to any one of claims 1 to 3 is attached to at least one surface of the lead frame,
A semiconductor chip is mounted on the lead frame,
Sealing the semiconductor chip side with a sealing resin;
A method for manufacturing a resin-encapsulated semiconductor device, comprising a step of peeling the adhesive tape after sealing.
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