CN103305138A - Pressure-sensitive adhesive tape for resin sealing and production method for resin sealing type semiconductor device - Google Patents

Pressure-sensitive adhesive tape for resin sealing and production method for resin sealing type semiconductor device Download PDF

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Publication number
CN103305138A
CN103305138A CN2012100600923A CN201210060092A CN103305138A CN 103305138 A CN103305138 A CN 103305138A CN 2012100600923 A CN2012100600923 A CN 2012100600923A CN 201210060092 A CN201210060092 A CN 201210060092A CN 103305138 A CN103305138 A CN 103305138A
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China
Prior art keywords
sensitive adhesive
pressure
adhesive tape
resin
pressure sensitive
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CN2012100600923A
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Inventor
近藤广行
星野晋史
有满幸生
西尾昭德
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Nitto Denko Corp
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Nitto Denko Corp
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Priority to CN2012100600923A priority Critical patent/CN103305138A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
    • H01L2224/83005—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus being a temporary or sacrificial substrate
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
    • H01L2224/85005—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate being a temporary or sacrificial substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Adhesive Tapes (AREA)

Abstract

The invention relates to a pressure-sensitive adhesive tape for resin sealing and a production method for a resin sealing type semiconductor device. The invention provides the pressure-sensitive adhesive tape for resin sealing during production of the resin sealing type semiconductor device and the production method for the resin sealing type semiconductor device by using the pressure-sensitive adhesive tape. The pressure-sensitive adhesive tape comprises a substrate layer which does not have a glass transition temperature below 260 DEG C and a pressure sensitive adhesive layer laminated on the substrate layer. According to the invention, even under strict conditions, e.g., in the production process of MAP-QFN, the pressure-sensitive adhesive tape can highly prevent leakage of a resin without bad influence on determinacy of lead bonding and has excellent peeling performance after resin sealing.

Description

Resin-sealed production method with pressure-sensitive adhesive tape and resin-encapsulated semiconductor device
Technical field
The present invention relates to resin-sealed production method with pressure-sensitive adhesive tape and resin-encapsulated semiconductor device.
Background technology
In recent years, CSP (die size/size encapsulation) technology receives publicity in the field engineering of LSI.In this technology, as by QFN (Quad Flat Non-leaded Package) expression with lead terminal be contained in form in the package be encapsulated in miniaturization and highly integrated aspect is subject to special concern.
In this QFN, the productive production method that can improve significantly every lead frame area is subject to special concern.Such method comprises following production method, and the method is included in that the matrix pad (die pad) of lead frame is upper arranges a plurality of QFN chips, in the cavity of mould with sealing resin with its integral sealing, then it is cut off to be divided into independent QFN structure.
In the production method of the QFN of a plurality of semi-conductor chips of integral sealing, the lead frame zone by the forming mould clamping when resin-sealed only is a part that covers the outside, resin-sealed district of encapsulation area of the pattern (package pattern area) fully.Therefore, in the encapsulation area of the pattern, heart section therein particularly, the back side of lead frame can not be pressed onto forming mould by enough pressure, and is difficult to prevent that sealing resin from leaking to the back side of lead frame.As a result, the problem that the terminal etc. of QFN is covered by resin easily appears.
For this reason, pressure-sensitive adhesive tape is adhered to the lead frame back side, and prevents that by the sealing effectiveness that utilizes the pressure-sensitive adhesive tape self-adhesion resin leakage from being effective to the production method at the lead frame back side for the production method of QFN.
, after being installed to semi-conductor chip on the lead frame or after the wire-bonded, consider treatability herein, it is in fact difficult that the thermotolerance pressure-sensitive adhesive tape is adhered to the lead frame back side.Therefore, expectation at first is adhered to the thermotolerance pressure-sensitive adhesive tape back side of lead frame, and through after semi-conductor chip installation and the wire-bonded, uses the sealing of sealing resin, and peel off subsequently the thermotolerance pressure-sensitive adhesive tape.Example as these methods, proposed to use and had the thermotolerance pressure-sensitive adhesive tape that thickness is the following pressure sensitive adhesive layer of 10 μ m, when preventing resin leakage, carry out the method for the steps such as a series of wire-bonded (for example, JP-A-2002-184801).
Summary of the invention
In the aforementioned production method, except the performance that prevents the sealing resin leakage, pressure-sensitive adhesive tape also requires to have is enough to heat-resisting high heat resistance in the semi-conductor chip installation steps, adversely do not affect the accurate operation performance in the wire-bonding step, and after resin-sealed, have excellent separability.
Be difficult to satisfy all these requirements.Especially, in recent years in production (particularly the MAP type of the many packagies of the integral sealing is produced) process of various QFN, exist pressure-sensitive adhesive tape to be subject to the determinacy reduction that thermal history affects and prevent by pressure-sensitive adhesive tape the resin leakage of sealing resin, and pressure-sensitive adhesive tape adversely affect the deterministic situation of wire-bonded.
According to above-mentioned, for example also prevent to heavens resin leakage and adversely do not affect wire-bonded in the MAP-QFN manufacturing processed under stringent condition even exist, and the demand that also has the thermotolerance pressure-sensitive adhesive tape of excellent separability after resin-sealed.
Consideration the problems referred to above have been finished the present invention.
Therefore, the purpose of this invention is to provide the thermotolerance pressure-sensitive adhesive tape, even it for example prevents to heavens that also resin leakage from adversely not affecting the determinacy of wire-bonded in the MAP-QFN manufacturing processed under stringent condition, and after resin-sealed, also has excellent separability.
Another object of the present invention provides the method for using pressure-sensitive adhesive tape to produce semiconducter device.
As in order to achieve the above object and to the result of the various researchs such as performance, material and thickness of thermotolerance pressure-sensitive adhesive tape, the inventor finds by using the substrate layer that does not observe second-order transition temperature (Tg) in the specified temp zone to achieve the above object, and reaches and finish the present invention.
Namely, the invention provides and in producing resin-encapsulated semiconductor device, be used for resin-sealed pressure-sensitive adhesive tape, described pressure-sensitive adhesive tape comprises: do not have the substrate layer of the second-order transition temperature in 260 ℃ of following temperature ranges, and be laminated to the pressure sensitive adhesive layer on the described substrate layer.
Preferred described substrate layer does not have the second-order transition temperature in the temperature range below 300 ℃.
Preferred described substrate layer has the thickness of 5 to 100 μ m.
Preferred described substrate layer is when the degree of heat-shrinkage that has in the time of 3 hours 180 ℃ of lower heating below 0.40%.
Preferred described pressure sensitive adhesive layer only is laminated on the face of described substrate layer.
Preferred described pressure sensitive adhesive layer has the thickness of 2 μ m to 50 μ m.
The thickness of preferred described pressure sensitive adhesive layer (B) is below 3 with the ratio (B/A) of the thickness (A) of described substrate layer.
5% weightless temperature when the preferred pressure sensitive adhesive that consists of described pressure sensitive adhesive layer has according to the thermogravimetric analysis under the following condition determination is more than 250 ℃, and described condition determination is: temperature rise rate is that 10 ℃/minute, atmosphere gas are that atmosphere and gas flow are 200ml/ minute.
Preferably when the pressure sensitive adhesive that consists of described pressure-sensitive adhesive tape be below the 1.0mg/g gas generated in the time of 1 hour of 200 ℃ of lower heating.
The bounding force that preferred described pressure-sensitive adhesive tape has when being 180 ° of peel angles for lead frame is 0.05 to 6.0N/19mm width.
The bounding force that preferred described pressure-sensitive adhesive tape has when being 180 ° of degree of peeling off for lead frame when then heating was cooled to normal temperature in 1 hour under 200 ℃ is 0.1 to 6.0N/19mm width.
The bounding force that preferred described pressure-sensitive adhesive tape has when being 180 ° of peel angles for sealing resin is below the 10.0N/19mm width.
The storage modulus that preferred described pressure sensitive adhesive layer has under 200 ℃ is 0.50 * 10 5More than the Pa.
The preferred pressure sensitive adhesive that consists of described pressure sensitive adhesive layer is silicone pressure sensitive adhesive, acrylic psa or rubber-like pressure sensitive adhesive.
The preferred pressure sensitive adhesive that consists of described pressure sensitive adhesive layer has the gel fraction more than 60%.
Preferred described pressure-sensitive adhesive tape further comprises the stripping film that contacts with described pressure sensitive adhesive layer, described stripping film satisfy following require in (a) to (d) one of at least:
(a) stripping strength during 90 ° ± 15 ° of peel angles is below the 1.5N/50mm width,
(b) stripping strength during 120 ° ± 15 ° of peel angles is below the 1.2N/50mm width,
(c) stripping strength during 150 ° ± 15 ° of peel angles is below the 1.0N/50mm width, and
(d) stripping strength during 180 °+0 ° to 180 °-15 ° of peel angles is below the 1.0N/50mm width.
Preferably with in the method for described pressure-sensitive adhesive tape for the production of resin-encapsulated semiconductor device, described method comprises:
Described pressure-sensitive adhesive tape is adhered to the face of the die-attach area with portion of terminal and matrix pad, described the face that the matrix pad is set with die-attach area is opposite;
The semi-conductor chip matrix that will have electronic pads joins on the matrix pad of die-attach area;
Be electrically connected the joint of die-attach area portion of terminal and the electronic pads on semi-conductor chip with bonding wire; With
The face that semi-conductor chip is set with sealing resin sealing metal lead frame.
In addition, the invention provides the method for producing resin-encapsulated semiconductor device, described method comprises:
Above-mentioned pressure-sensitive adhesive tape of the present invention is adhered to the face of the die-attach area with portion of terminal and matrix pad, described the face that the matrix pad is set with die-attach area is opposite;
The semi-conductor chip matrix that will have electronic pads joins on the matrix pad of die-attach area;
Be electrically connected the joint of die-attach area portion of terminal and the electronic pads on semi-conductor chip with bonding wire; With
The face that semi-conductor chip is set with sealing resin sealing metal lead frame.
In this specification sheets, except as otherwise noted, the statement of expression numerical range " by X to Y (X and Y respectively do for oneself numerical value) " is for meaning the numerical value (that is, comprising X and Y) that numerical range comprises described statement two ends.
Even pressure-sensitive adhesive tape according to the present invention for example in the MAP-QFN production process, also prevents to heavens resin leakage and does not adversely affect the determinacy of wire-bonded, and have excellent stripping performance after resin-sealed under stringent condition.
In addition, according to the method for production semiconductor device according to the invention, even the method is used for the MAP-QFN production process, also be difficult to occur resin leakage, the determinacy of wire-bonded is also high, and it is also easy to be used for peeling off of resin-sealed pressure-sensitive adhesive tape after resin-sealed.
Description of drawings
Figure 1A to 1F represents to illustrate the process flow sheet of an example of the production method of semiconductor device according to the invention.
Fig. 2 A is the orthographic plan that is illustrated in an example of the lead frame that uses in the production method of semiconductor device according to the invention, and Fig. 2 B is the enlarged view of lead frame major portion.
Description of reference numerals
10: the encapsulation area of the pattern
11: lead frame
11a: opening
11b: lead terminal
11c: matrix pad
11d: one or more matrix bars (Die bar (s))
15: semi-conductor chip
16: bonding wire
17: sealing resin
19: conductive paste
20: pressure-sensitive adhesive tape
21: semiconducter device
Embodiment
Substrate layer
Pressure-sensitive adhesive tape of the present invention comprises the substrate layer with the second-order transition temperature in 260 ℃ of following temperature ranges.
To in producing resin-encapsulated semiconductor device, be used for resin-sealed pressure-sensitive adhesive tape and be exposed in use high temperature.Especially, in wire-bonding step, pressure-sensitive adhesive tape is exposed to usually approximately 200 ℃ high temperature.
Pressure-sensitive adhesive tape of the present invention comprises the substrate layer with the second-order transition temperature in 260 ℃ of following temperature ranges.Therefore, though pressure-sensitive adhesive tape under stringent condition for example in the MAP-QFN production process, also prevent to heavens resin leakage and adversely do not affect the determinacy of wire-bonded, and after resin-sealed, have excellent stripping performance.
Research according to the inventor, unexpectedly, even do not have in the situation of the approximately 200 ℃ second-order transition temperatures under (it is above-mentioned wire-bonded temperature) at substrate layer, also there is the deterministic certain situation that occurs resin leakage in the resin-sealed step and be subject to affecting by the pressure sensitive adhesion sheet of thermal history impact wire-bonded.
More preferably, substrate layer does not have the second-order transition temperature in 300 ℃ of following temperature ranges.
Substrate layer is not particularly limited, as long as it does not have second-order transition temperature in the said temperature scope, and can use any substrate layer, as long as its material by the substrate layer of the pressure-sensitive adhesive tape that is used for using in this technical field consists of.
The example of this material comprises the tinsels such as polyethersulfone (PES) resin, polyimide (PEI) resin, polysulfones (PSF) resin, polyether-ether-ketone (PEEK) resin, polyarylester (PAR) resin, aromatic polyamide resin, polyimide resin, liquid crystalline polymers (LCP) and aluminium foil.
Wherein, from the viewpoint of thermotolerance and substrate intensity, preferably use polyimide resin.
In this specification sheets, term " second-order transition temperature " refers in DMA method (drawing process), at temperature rise rate: the temperature at demonstration loss tangent (tan δ) peak of confirming under the condition of 5 ℃/minute, sample width: 5mm, chuck distance: 20mm and frequency: 10Hz.Second-order transition temperature is measured with being purchased device (for example, RSA-II is made by Rheometric Scientific FE Ltd.).Therefore, for example, statement " not having the second-order transition temperature in 260 ℃ of following temperature ranges " refers to not observe the peak of loss tangent (tan δ) in the temperature range below 260 ℃.
From the treatability of pressure-sensitive adhesive tape (for example, be difficult to crooked or tear) viewpoint, substrate layer has more than the preferred 5 μ m, and the more preferably above thickness of 10 μ m.On the other hand, from the viewpoint of the separability of pressure-sensitive adhesive tape, substrate layer has below the preferred 100 μ m, and the more preferably following thickness of 75 μ m.
Because substrate layer shrinks the viewpoint of the lead frame warpage that causes, substrate layer preferably has the degree of heat-shrinkage below 0.40% after heating 3 hours under 180 ℃ from preventing.
In this specification sheets, term " degree of heat-shrinkage " is measured as follows.That is, heated the square film of 5cm 3 hours under 180 ℃, the ratio (%) of the dimensional change of size (5cm is square) (100%) that will be front with respect to heating is as " degree of heat-shrinkage ".Measure shrink grading by being purchased projector's (PJ-H3000F is made by Mitsutoyo Corporation).
Pressure sensitive adhesive
Pressure-sensitive adhesive tape has the pressure sensitive adhesive layer that is laminated on the substrate layer.Herein, pressure sensitive adhesive layer can only be arranged on the one side of substrate layer, and can be arranged on the two sides of substrate layer.
Pressure sensitive adhesive layer preferably only is laminated on the one side of substrate layer.
The pressure sensitive adhesive that consists of pressure sensitive adhesive layer is not particularly limited, as long as it has thermotolerance, and can be any type of pressure sensitive, thermosensitive type and Photosensitive.
The example of pressure sensitive adhesive comprises various pressure sensitive adhesives, for example acrylic psa, silicone pressure sensitive adhesive, rubber-like pressure sensitive adhesive and epoxies pressure sensitive adhesive.Wherein, from stable on heating viewpoint, preferably use silicone pressure sensitive adhesive and acrylic psa, and more preferably use the silicone pressure sensitive adhesive.
The example of silicone pressure sensitive adhesive comprises the pressure sensitive adhesive that contains polydimethylsiloxane.
The example of acrylic psa comprises and contains the pressure sensitive adhesive that contains at least the acrylic copolymer that the monomer of (methyl) alkyl acrylate obtains by copolymerization.In this specification sheets, term " (methyl) alkyl acrylate " refers to alkyl acrylate and/or alkyl methacrylate.
The example of (methyl) alkyl acrylate comprises (methyl) methyl acrylate, (methyl) ethyl propenoate, (methyl) butyl acrylate, (methyl) vinylformic acid isopentyl ester, the just own ester of (methyl) vinylformic acid, (methyl) 2-EHA, (methyl) Isooctyl acrylate monomer, (methyl) vinylformic acid ester in the different ninth of the ten Heavenly Stems, (methyl) decyl acrylate and (methyl) dodecylacrylate.At first, preferred acrylic monomer and the multipolymer of (methyl) 2-EHA monomer and the multipolymer of (methyl) methyl acrylate and/or (methyl) ethyl propenoate, Acrylic Acid Monomer and (methyl) 2-EHA monomer.
If necessary, pressure sensitive adhesive layer can comprise linking agent.
The example of linking agent comprises isocyanate crosslinking, epoxy crosslinking agent, aziridines compound and inner complex class linking agent.
The addition of linking agent is not particularly limited.For example, in using the situation of acrylic psa, preferred 0.1 to 15 weight part of the addition of linking agent, and more preferably 0.5 to 10 weight part are with respect to the acrylic psa of per 100 weight parts.When using linking agent in this scope, the visco-elasticity of pressure sensitive adhesive layer can suitably be set, and can obtain the suitable bounding force to lead frame or sealing resin of pressure sensitive adhesive layer.As a result, even when releasing pressure sensitive adhesive tapes, prevent also that sealing resin is stripped from or destruction and part pressure sensitive adhesive layer are adhered to the phenomenon of lead frame or sealing resin (that is, adhesive residue).The over-curing that can suppress in addition, pressure sensitive adhesive layer.
From preventing the viewpoint of adhesive residue when peeling off Pressure Sensitive Tape of the present invention, the pressure sensitive adhesive of formation pressure sensitive adhesive layer preferably has the gel fraction more than 60%.
Prevent that adhesive residue from can make it omit the cleaning of semi-conductor chip.
The gel fraction of pressure sensitive adhesive can be regulated by for example regulating degree of crosslinking.
In this specification sheets, the ratio of the solvent insoluble component in term " gel fraction " the finger pressure sensitive adhesive, and by the following method measurements and calculations.
(measuring method of gel fraction)
Pressure sensitive adhesive is applied over surface, subsequent drying and the curing of stripping film etc.Cover thus obtained approximately 0.1g pressure sensitive adhesive films with the tetrafluoroethylene sheet material, and at room temperature impregnated in 1 week in the excessive solvent (toluene).Measure the weight of pressure sensitive adhesive layer dipping front and back, and will be than (weight behind the weight behind the dipping/dipping) * 100 as gel fraction.
Pressure sensitive adhesive layer can further comprise usually at the various additives that use in the art, for example softening agent, pigment, dyestuff, ageing inhibitor, static inhibitor and the filler that adds for the performance (for example, Young's modulus) of improving pressure sensitive adhesive layer.The addition of additive is not particularly limited, as long as described amount is not damaged the suitable binding property of pressure sensitive adhesive layer.The addition of additive is generally 0.5 to 20 weight part, and preferred 1.0 to 15 weight parts, with respect to the whole pressure sensitive adhesive layer of per 100 weight parts.
From the viewpoint that prevents that the wire-bonded that causes owing to the secondary deposition of gaseous fraction on leadframe surfaces that produces moisture-proof reliability bad and resin-sealed rear package from reducing, expect that the generations when heating pressure sensitive adhesive layers gas in the time of 1 hour under 200 ℃ are below the 1.0mg/g.
The generation of gas can be by such as the degree of crosslinking that increases pressure sensitive adhesive and remove lower-molecular-weight component etc. and reduce in pressure sensitive adhesive.
In this specification sheets, term " generation of gas " refers to by collecting the 10mg pressure sensitive adhesive layer, be sealed in gas-chromatography with in the bottle, capture is by adding thermogenetic gas, and the generation of the gas that obtains with the generation of vapor-phase chromatography measurement gas (total discharge quantity, μ g (gas)/g (pressure sensitive adhesive layer)).
Can be by come the generation of measurement gas with lower device and condition etc.
＜measuring apparatus 〉
The head space automatic sampler: " 7694 ", made by Aglilent Tchnologies
GC: " 6890 Plus ", made by Agilent Technologies
MS: " 5973N ", made by Agilent Technologies
＜measuring condition 〉
(head space automatic sampler)
Clamping time: 0.12 minute
The loop emphasis time (Loop priority time): 0.12 minute
Loop starting time: 0.05 minute
Injection length: 3.00 minutes
Sample loop temperature (Sample loop temperature): 200 ℃
Line of pipes temperature: 220 ℃
(GC)
Post: HP-5MS (0.25 μ m), 0.25mm diameter * 30m
Carrier gas: He, 1.0ml/ minute (constant current mode)
Column head pressure: 48.7kPa (40 ℃)
Inlet: shunting (split) (splitting ratio 46: 1)
Inlet temperature: 250 ℃
Column temperature: 40 ℃ of (keeping 5 minutes)-(+10 ℃/minute) → 300 ℃ (keeping 9 minutes)
(MS)
Ionization method: EI
Transmitter current: 35 μ A
Electron energy: 70eV
E.M. voltage: 1141V
Source temperature: 230 ℃
The Q-utmost point: 150 ℃
Interface: 280 ℃
From preventing since pressure sensitive adhesive adheres to by mould or the semiconductor production step process such as wire-bonded the deteriorated band that causes of heating steps peel off the viewpoint of rear adhesive residue, pressure sensitive adhesive desirably has 5% weightless temperature more than 250 ℃.
Can increase by 5% weightless temperature by the degree of crosslinking that for example increases pressure sensitive adhesive and the lower-molecular-weight component of removing in the pressure sensitive adhesive.
At temperature rise rate: 10 ℃/minute, atmosphere gas: measure 5% weightless temperature under atmosphere and gas flow: 200ml/ minute the condition.
Particularly, measure 5% weightless temperature by following measuring method.
(measuring method)
Measure item: TG (thermogravimetric)
Measuring apparatus: " TG/DTA6200 ", made by SII NanoTechnology Inc.
Measure operation: sample is put into the platinum container, carry out under the following conditions TG and measure, and measure 5% value when weightless.
Measuring condition:
Measure temperature range: room temperature to 850 ℃
Temperature rise rate: 10 ℃/minute
Atmosphere gas: atmosphere
Gas flow: 200ml/ minute
Before the wire-bonding step of the joint that passes through bonding wire electric connecting wire frame portion of terminal and the electronic pads on the semi-conductor chip, pressure-sensitive adhesive tape is adhered to lead frame sometimes.In pressure sensitive adhesive layer is flexible situation, do not obtain sufficient wire-bonded.Therefore, from the viewpoint of sufficient wire-bonded, the storage modulus that pressure sensitive adhesive layer preferably has under 200 ℃ is 5.0 * 10 4More than the Pa.
On the other hand, from obtaining the viewpoint of suitable bounding force, storage modulus is 1.0 * 10 7Below the Pa.
In this specification sheets, term " storage modulus " is by preparing sample layer with 1.5mm to 2mm thickness, with diameter be the drift punching press sample layer of 7.9mm obtaining sample, and the visco-elasticity spectrograph (ARES) made from Rheometric Scientific is at chuck pressure: measure sample under the condition of 100g weight and frequency: 1Hz and the value that obtains.
To the viewpoint of the bounding force of lead frame, pressure sensitive adhesive layer has more than the preferred 2 μ m from fully, more preferably more than the 3 μ m, and the further above thickness of preferred 4 μ m.On the other hand, from the viewpoint of sufficient wire-bonded, thickness is preferably below the 50 μ m, more preferably below the 40 μ m, and further below the preferred 30 μ m.
From suppress to peel off with the time adhesive residue viewpoint, the thickness of pressure sensitive adhesive layer (B) is preferably below 3 with the ratio (B/A) of the thickness (A) of substrate layer in pressure-sensitive adhesive tape.
The production method of pressure-sensitive adhesive tape
Pressure-sensitive adhesive tape of the present invention can prepare by conventional in the art production method.For example, prepare above-mentioned pressure sensitive adhesive layer component, and the one side of paint substrate layer, subsequent drying.Therefore, can form pressure sensitive adhesive layer.As the coating process of pressure sensitive adhesive layer component, can adopt that rod is coated with that machine coating, airblade coating, intaglio plate coating, intaglio plate oppositely are coated with, the whole bag of tricks such as contrary roller coat cloth, lip coating, mold pressing coating, dip-coating, offset printing, flexible printing and silk screen printing.Also can use individually at release liner and form pressure sensitive adhesive layer and pressure sensitive adhesive layer is adhered to the method for base material film.
Pressure-sensitive adhesive tape
In resin-encapsulated semiconductor device production, thus obtained pressure-sensitive adhesive tape of the present invention is adhered to lead frame, therefore, requires to have the suitable pressure-sensitive-adhesive to lead frame.
From fully to the bounding force of lead frame (for example, do not occur with the bounding force of peeling off in the course of processing) viewpoint, pressure-sensitive adhesive tape is being preferably more than the 0.05N/19mm width for the bounding force of lead frame (lead frame that is particularly formed by following metal sheet) when being 180 ° of peel angles, more preferably more than the 0.10N/19mm width, and more than the further preferred 0.15N/19mm width.On the other hand, from prevent when band be adhered to lead frame when failure peel off this with the time contingent adhesive residue and the distortion of matrix pad section etc. viewpoint, pressure-sensitive adhesive tape has below the preferred 6.0N/19mm width, more preferably below the 5.0N/19mm width, and the following bounding force of further preferred 4.0N/19mm.
Measure stripping strength by being purchased measuring apparatus (for example, Autograph AG-X is made by Shimadzu Corporation).
Similarly, from preventing when the peeling off adhesive residue viewpoint to the sealing resin, the bounding force that pressure-sensitive adhesive tape has when the peel angle that for sealing resin (particularly following sealing resin) is 180 ° is below the 10.0N/19mm width, below the preferred 8.0N/19mm width, and more preferably below the 6.0N/19mm.
Optional phase after resin-sealed step is peeled off pressure-sensitive adhesive tape of the present invention from lead frame.Therefore, from preventing the viewpoint of resin leakage, require pressure-sensitive adhesive tape even after being exposed to high temperature, also have bounding force to lead frame.Yet the pressure-sensitive adhesive tape with strong bounding force easily causes adhesive residue, and is difficult to be stripped from.In addition, according to circumstances, the misgivings of peeling off and destroying that exist such pressure-sensitive adhesive tape to cause molded resin to cause owing to the stress that is used for releasing pressure sensitive adhesive tapes.From these viewpoints, than suppressing stronger bonding not preferred on the contrary of bounding force that sealing resin protrudes.For this reason, pressure-sensitive adhesive tape 200 ℃ of lower heating after 1 hour for lead frame (especially, stripping strength (bounding force) when being 180 ° peel angle the lead frame that forms by described metal sheet hereinafter) is preferably more than the 0.1N/19mm width, more preferably more than the 0.2N/19mm width, and more than the further preferred 0.3N/19mm width, and on the other hand, below the preferred 6.0N/19mm width, more preferably below the 5.0N/19mm width, and below the further preferred 4.0N/19mm width.
In this specification sheets, " stripping strength (bounding force) " measured according to JIS Z0237:1999.
On the other hand, at first pressure-sensitive adhesive tape is adhered to lead frame, then peels off from lead frame in optional phase.When pressure-sensitive adhesive tape had strong bounding force, be difficult to releasing pressure sensitive adhesive tapes, and according to circumstances, cause peeling off and destroying of the molded resin that causes owing to the stress that is used for releasing pressure sensitive adhesive tapes.Therefore, than suppressing stronger bonding not preferred on the contrary of bounding force that sealing resin protrudes.For example, in the production process of semiconducter device, be that approximately 0.05 to 6.0N/19mm width is suitable according to the bounding force of JIS Z0237 under 25 ℃.In addition, 200 ℃ of lower heating pressure-sensitive adhesive tapes after 1 hour the bounding force to lead frame be preferably approximately 0.1 to 6.0N/19mm width, and 0.1 to 4.0N/19mm width more preferably from about.
Preferred pressure-sensitive adhesive tape of the present invention further comprises stripping film.Stripping film is the sheet material that contacts formation in order to protect pressure sensitive adhesive layer with pressure sensitive adhesive layer.Depend on the type of the pressure sensitive adhesive that comprises in pressure sensitive adhesive layer etc., stripping film preferably has the stripping strength of particular value.Stripping strength can suitably be regulated by the angle when releasing pressure sensitive adhesive tapes.For example, preferred satisfy the following stripping strength one of at least that requires (a) to (d), and more preferably satisfy the stripping strength of more requirements.
Stripping strength is below the 1.5N/50mm width during (a) 90 ° ± 15 ° peel angle, below the preferred 1.0N/50mm width, more preferably below the 0.5N/50mm width, below the further preferred 0.3N/50mm width, also is more preferably below the 0.2N/50mm width.
Stripping strength is below the 1.2N/50mm width during (b) 120 ° ± 15 ° peel angle, below the preferred 1.0N/50mm width, more preferably below the 0.8N/50mm width, below the further preferred 0.6N/50mm width, also is more preferably below the 0.3N/50mm width.
Stripping strength is below the 1.0N/50mm width during (c) 150 ° ± 15 ° peel angle, below the preferred 0.8N/50mm width, more preferably below the 0.6N/50mm width, below the further preferred 0.5N/50mm width, also be more preferably below the 0.3N/50mm width, and particularly preferably below the 0.2N/50mm width.
Stripping strength is below the 1.0N/50mm width during (d) 180 ° ± 0 ° to 180 °-15 ° peel angle, below the preferred 0.8N/50mm width, more preferably below the 0.6N/50mm width, below the further preferred 0.5N/50mm width, also be more preferably below the 0.3N/50mm width, and particularly preferably below the 0.2N/50mm width.
When stripping strength falls into above-mentioned scope, even in using the situation of normally used tape lamination device etc., do not require be used to the excessive stripping strength of peeling off stripping film yet, the skew of the wrinkling and bond locations of Pressure Sensitive Tape does not occur, and can prevent that unrelieved stress is applied to pressure-sensitive adhesive tape.Therefore, can suppress the generation of lead frame warpage and the resin leakage of sealing resin etc.
Stripping film comprise with single layer structure or multilayered structure and adopt normally used following material in the art and their formation such as crosslinked peel off base material, described material for example, polymkeric substance such as polyvinyl chloride, polyvinylidene dichloride, polyester (such as polyethylene terephthalate), polyimide, polyether-ether-ketone, polyolefine is (such as Low Density Polyethylene, linear polyethylene, medium-density polyethylene, high density polyethylene(HDPE), ultra-low density polyethylene, the polypropylene of random copolymerization, the polypropylene of block copolymerization, homo-polypropylene, polybutene and polymethylpentene), urethane, vinyl-vinyl acetate copolymer, ionomer resin, ethene-(methyl) acrylate copolymer, ethene-(methyl) acrylate (random or alternately) multipolymer), ethylene-butene copolymer, ethene-hexene copolymer, fluoro-resin, celluosic resin.
As stripping film, lift-off processing is carried out in suitable use wherein its at least one side that contacts with pressure sensitive adhesive layer, thereby makes stripping film basically not be adhered to the stripping film of pressure sensitive adhesive layer.Lift-off processing can be used ordinary method and material and carrying out in the art.The example of lift-off processing comprises with the lift-off processing of silicon resin with the lift-off processing of fluoro-resin.Particularly, exemplify CERAPEEL series (Toray Advanced Film Co., Ltd.) gently peel off the level and the medium level of peeling off.
The production method of resin-encapsulated semiconductor device
Pressure-sensitive adhesive tape of the present invention is for producing semiconducter device, particularly when the pressure-sensitive adhesive tape that carries out using when resin-sealed.Namely, during the semi-conductor chip on being installed on the lead frame front resin-sealed, pressure-sensitive adhesive tape is used at least one side, the normally back side (face opposite with the face of mounting semiconductor chip of bonding lead frame, hereinafter like this), and be used for after sealing, peeling off.
For example, in the method for pressure-sensitive adhesive tape of the present invention for the production of semiconducter device, described method comprises at least one side that pressure-sensitive adhesive tape is adhered to lead frame, the back side normally, mounting semiconductor chip on the surface of matrix pad, with the resin-encapsulated semiconductor chip side and after sealing the step of releasing pressure sensitive adhesive tapes.
The method of using pressure-sensitive adhesive tape of the present invention to produce the resin molded type semiconductor chip is below described.
The method of producing the resin molded type semiconductor chip generally includes following steps.
Step 1: pressure-sensitive adhesive tape (thermotolerance pressure-sensitive adhesive tape) is adhered to the face of the die-attach area with portion of terminal and matrix pad, described the face that the matrix pad is set with die-attach area is opposite.
Step 2: the semi-conductor chip matrix that will have electronic pads joins on the matrix pad of die-attach area.
Step 3: be electrically connected the joint of die-attach area portion of terminal and the electronic pads on semi-conductor chip with bonding wire.
Step 4: with the face that semi-conductor chip is set of sealing resin sealing metal lead frame.
Carrying out successively step 2 to 4, is sufficient but carried out step 1 before step 4.That is, step 1 can be before or after step 2 (that is, before step 3), or carries out after step 3.
Preferably carry out successively step 1 to 4.
As previously mentioned, the optional phase of pressure-sensitive adhesive tape of the present invention after step 4 that is adhered to lead frame in step 1 peeled off from lead frame.
Particularly, shown in Figure 1A, pressure-sensitive adhesive tape 20 of the present invention is adhered to the one side of lead frame 11, the i.e. back side.
Lead frame 11 is formed by the metal sheet of Cu based material (such as Cu-Fe-P) or Fe based material (such as Fe-Ni) etc. usually.Especially, preferred electrical contacts (with the connection section of semi-conductor chip, the below will describe) covers the lead frame of (plating) with silver, nickel, palladium or gold etc.Lead frame 11 has the approximately thickness of 100 to 300 μ m usually.
Lead frame 11 is preferably the lead frame of arranging a plurality of given configuration patterns (configuration pattern) (for example, the configuration pattern of single QFN), thereby can when cut-out step subsequently it easily be separated.Particularly, shown in Fig. 2 A and 2B, encapsulation area of the pattern 10 is called QFN or MAP-QFN etc. with the configuration that matrix shape is arranged on the lead frame 11, and is one of most preferred configuration.
Lead frame 11 has matrix pad 11c and lead terminal 11b usually.Matrix pad 11c and lead terminal 11b can arrange separately.Yet, shown in Fig. 2 B, the preferred lead frame 11 that is provided with integratedly by a plurality of lead terminal 11b of a plurality of adjacent openings 11a defineds, the matrix pad 11c that arranges in the center of opening 11a and randomly locates to support the matrix bar 11d of matrix pad 11c at four angles of opening 11a.Matrix pad 11c and lead terminal 11b can for other function for example heat release purpose and form.
Pressure-sensitive adhesive tape 20 and lead frame 11 bonding preferred encapsulates area of the pattern 10, than the zone of encapsulation area of the pattern 10 more laterals of lead frame (namely at least in lead frame 11, the zone that comprises the whole periphery in the resin-sealed district that wants resin-sealed), perhaps encapsulating area of the pattern 10 carries out with the zone that comprises the whole periphery of encapsulation area of the pattern.
Be adhered in the situation in zone of the whole periphery that comprises resin-sealed zone at pressure-sensitive adhesive tape of the present invention, pressure-sensitive adhesive tape not only can be adhered to the back side of lead frame, but also can be adhered to its front.Be adhered in the situation that encapsulates area of the pattern 10 and the zone of the whole periphery that comprises the resin-sealed district that wants resin-sealed at pressure-sensitive adhesive tape, pressure-sensitive adhesive tape preferably only is adhered to the back side of lead frame.
Lead frame 11 has pilot pin usually with hole (for example, 13 among Fig. 2 A) near its edge side, position being used for when resin-sealed.Therefore, pressure-sensitive adhesive tape preferably is adhered to the zone of not blocking described hole.A plurality of encapsulation area of the pattern 10 are along the longitudinal arrangement of lead frame 11.Therefore, thus preferred continuously bonding those a plurality of zones of crossing over of pressure-sensitive adhesive tape 20.
As shown in Figure 1B, semi-conductor chip 15 is installed on the surface of lead frame 11 (face that pressure-sensitive adhesive tape 20 is not bonding).
Usually, as mentioned above, lead frame 11 is provided with the fixed area that is called matrix pad 11c and is used for fixedly semi-conductor chip 15.Therefore, semi-conductor chip is installed on the matrix pad 11c.
The whole bag of tricks of example such as conductive paste 19, self adhesive tape or pressure sensitive adhesive (for example, thermoset pressure sensitive adhesive) etc. is used to semi-conductor chip 15 is installed on the matrix pad 11c.In the situation of using conductive paste or pressure sensitive adhesive etc. to install, usually approximately carrying out thermofixation approximately 30 to 90 minutes under 150 to 200 ℃ the temperature.
Shown in Fig. 1 C, in semi-conductor chip 15 lip-deep electronic pads (not shown) and lead frame 11 wire-bonded randomly.
For example gold thread or aluminum steel carry out wire-bonded with bonding wire 16.Usually by by means of hyperacoustic vibrational energy and by means of the engage pressure of exerting pressure can be combined in 150 to 250 ℃ the heated condition and carry out wire-bonded.
Then, lead frame 11 is held between the upper and lower mould (not shown), and injects sealing resin 17 with sealing semiconductor chips 15.Be adhered in the zone of the whole periphery in resin-sealed district within pressure-sensitive adhesive tape is comprising lead frame in the situation of front and back of lead frame, the sealing of this moment can be one of single face sealing and dual face seals.Be adhered in the situation in encapsulation area of the pattern 10 and the zone that comprises the whole periphery that encapsulates area of the pattern 10 at pressure-sensitive adhesive tape, preferably carry out the single face sealing.At first, in the situation of carrying out the single face sealing, can preferably use pressure-sensitive adhesive tape of the present invention.
The sealing of carrying out semi-conductor chip is installed on semi-conductor chip 15 and bonding wire 16 on the lead frame 11 with protection.For example, using the method for the moulding such as Resins, epoxy in mould is exemplary process.In the case, the preferred use comprises that the mould of the upper die and lower die with a plurality of cavitys seals a plurality of semi-conductor chips simultaneously.Usually, the Heating temperature when resin-sealed is approximately 170 to 180 ℃, and is cured several minutes under this temperature, then carries out the curing (post-mold curing) several hours after the moulding.
Afterwards, shown in Fig. 1 D, will comprise that the lead frame 11 of sealing resin 17 takes out from mould.
Shown in Fig. 1 E, release adhesive is to the pressure-sensitive adhesive tape at lead frame 11 back sides.
Peeling off preferably of pressure-sensitive adhesive tape 20 carried out before the curing after the above-mentioned moulding after the sealing.
Afterwards, shown in Fig. 1 F, cut apart the lead frame 11 that comprises sealing resin 17 based on each semi-conductor chip 15, thereby can obtain semiconducter device 21.
Rotary cutter that can use slicing machine (dicer) etc. is cut apart lead frame based on each semi-conductor chip 15.
In addition, be the resin-sealed middle one side that pressure-sensitive adhesive tape of the present invention is adhered to lead frame at semi-conductor chip fully, the preferred back side.In the step shown in Figure 1A to Fig. 1 C, pressure-sensitive adhesive tape can be bonding behind mounting semiconductor chip, and can be bonding behind the wire-bonded semi-conductor chip.At first, this step is preferably carried out with the order shown in above-mentioned Figure 1A to Fig. 1 C.In addition, the structure that depends on semi-conductor chip can not carried out wire-bonded.
Embodiment
The description the present invention in more detail such as reference example, but the present invention and be not interpreted as and be subject to these embodiment.
Embodiment 1
(KAPTON 100H (trade(brand)name), by Du pont-Toray Co., Ltd. makes, thermal linear expansion coefficient: 2.7 * 10 to use the thick polyimide film of 25 μ m -5/ K, Tg:402 ℃) as substrate layer.Add 100 weight part silicone pressure sensitive adhesives " SD-4586 " (by Dow Corning Toray Silicone Co., Ltd. makes) and 2.5 weight part platinum catalysts to toluene, and be scattered in the toluene equably.The gained dispersion liquid is applied over the one side of substrate layer, subsequent drying.Therefore, preparation has the approximately thermotolerance pressure-sensitive adhesive tape of the pressure sensitive adhesive layer of 6 μ m thickness.The storage modulus that pressure sensitive adhesive has under 200 ℃ is 4.0 * 10 5Pa.The bounding force that described band has when being 180 ° of peel angles for the copper lead frame is the 1.0N/19mm width, and to have 180 ° of peel angles of bounding force when being to(for) the copper lead frame after 1 hour 200 ℃ of lower heating be about 2.7N/19mm width.In addition, the bounding force that has when being 180 ° of peel angles for sealing resin at resin-sealed rear described band is 3.0N/19mm.
The copper lead frame that uses has the approximately surfaceness of 80nm.Surfaceness is by measuring with the contact process of following measuring apparatus and measuring condition.
(measuring apparatus)
KLA-Tencor?Corporation″P-15″
(measuring condition)
Measure width: 2mm
Measuring speed: 50 μ m/ seconds
Pressure sensitive adhesive has 5% weightless temperature under 330 ℃, and the generations of heating pressure sensitive adhesives gas after 1 hour are 0.03mg/g under 200 ℃.In addition, substrate layer is 0.35% in the degree of heat-shrinkage of 180 ℃ of lower heating after 3 hours.
Embodiment 2
(trade(brand)name: APICAL25NPI (trade(brand)name) is made thermal linear expansion coefficient: 1.7 * 10 by Kaneka Corporation except the polyimide film that uses 25 μ m thickness -5/ K, Tg:421 ℃) as beyond the substrate layer, obtain pressure-sensitive adhesive tape in the mode identical with embodiment 1.The bounding force that described band has when being 180 ° of peel angles for the copper lead frame is the 1.1N/19mm width, and to have 180 ° of peel angles of bounding force when being to(for) the copper lead frame after 1 hour 200 ℃ of lower heating be about 2.8N/19mm width.In addition, the bounding force that has when being 180 ° of peel angles for sealing resin after resin-sealed of described band is 3.2N/19mm.
Pressure sensitive adhesive has 5% weightless temperature under 330 ℃, and the generations of heating pressure sensitive adhesives gas after 1 hour are 0.03mg/g under 200 ℃.In addition, substrate layer is 0.11% in the degree of heat-shrinkage of 180 ℃ of lower heating after 3 hours.
Embodiment 3
(KAPTON 200H (trade(brand)name), by Du pont-Toray Co., Ltd. makes, thermal linear expansion coefficient: 2.7 * 10 except the polyimide film that uses 50 μ m thickness -5/ K, Tg:402 ℃) as beyond the substrate layer, obtain pressure-sensitive adhesive tape in the mode identical with embodiment 1.The bounding force that described band has when being 180 ° of peel angles for the copper lead frame is the 1.3N/19mm width, and to have 180 ° of peel angles of bounding force when being to(for) the copper lead frame after 1 hour 200 ℃ of lower heating be about 3.5N/19mm width.In addition, the bounding force that has when being 180 ° of peel angles for sealing resin after resin-sealed of described band is 3.7N/19mm.
Pressure sensitive adhesive has 5% weightless temperature under 330 ℃, and the generations of heating pressure sensitive adhesives gas after 1 hour are 0.03mg/g under 200 ℃.In addition, substrate layer is 0.36% in the degree of heat-shrinkage of 180 ℃ of lower heating after 3 hours.
Embodiment 4
Except the thickness with pressure sensitive adhesive layer becomes 15 μ m, obtain pressure-sensitive adhesive tape in the mode identical with embodiment 1.The bounding force that described band has when being 180 ° of peel angles for the copper lead frame is the 1.8N/19mm width, and to have 180 ° of peel angles of bounding force when being to(for) the copper lead frame after 1 hour 200 ℃ of lower heating be about 4.2N/19mm width.In addition, the bounding force that has when being 180 ° of peel angles for sealing resin after resin-sealed of described band is 4.5N/19mm.
Pressure sensitive adhesive has 5% weightless temperature under 330 ℃, and the generations of heating pressure sensitive adhesives gas after 1 hour are 0.08mg/g under 200 ℃.In addition, substrate layer is 0.35% in the degree of heat-shrinkage of 180 ℃ of lower heating after 3 hours.
Embodiment 5
Except using by 5 weight part isocyanate crosslinkings as linking agent being added to material that the polymkeric substance that obtains by copolymer-1 00 parts by weight of acrylic acid butyl ester and 10 parts by weight of acrylic acid obtains as the pressure sensitive adhesive, prepare the thermotolerance pressure-sensitive adhesive tape in the mode identical with embodiment 1.The storage modulus that described band has under 200 ℃ is 1.0 * 10 6Pa.The bounding force that described band has when being 180 ° of peel angles for the copper cash frame is the 0.5N/19mm width, and to have 180 ° of peel angles of bounding force when being to(for) the copper cash frame after 1 hour 200 ℃ of lower heating be about 1.5N/19mm width.In addition, the bounding force that has when being 180 ° of peel angles for sealing resin after resin-sealed of described band is 4.0N/19mm.
Pressure sensitive adhesive has 5% weightless temperature under 270 ℃, and the generations of heating pressure sensitive adhesives gas after 1 hour are 0.5mg/g under 200 ℃.In addition, substrate layer is 0.35% in the degree of heat-shrinkage of 180 ℃ of lower heating after 3 hours.
Comparative example 1
(TEONX Q81 (trade(brand)name) is made thermal linear expansion coefficient: 1.0 * 10 by Teijin DuPont-Teijin Japan Limited except the polyethylene terephthalate film of using 25 μ m thickness -5/ K, Tg:156 ℃) as beyond the substrate layer, obtain pressure-sensitive adhesive tape in the mode identical with embodiment 1.The bounding force that described band has when being 180 ° of peel angles for the copper cash frame is the 0.9N/19mm width, and to have 180 ° of peel angles of bounding force when being to(for) the copper cash frame after 1 hour at 200 ℃ of lower heating pressure sensitive adhesives be about 2.5N/19mm width.In addition, the bounding force that has when being 180 ° of peel angles for sealing resin after resin-sealed of described band is 2.8N/19mm.
Pressure sensitive adhesive has 5% weightless temperature under 270 ℃, and the generations of heating pressure sensitive adhesives gas after 1 hour are 0.03mg/g under 200 ℃.In addition, substrate layer is 0.42% in the degree of heat-shrinkage of 180 ℃ of lower heating after 3 hours.
Comparative example 2
(TORELINA 3030 (trade(brand)name), by Toray Industries, Inc. makes, thermal linear expansion coefficient: 3.2 * 10 except the polyphenylene sulfide film that uses 25 μ m thickness -5/ K, Tg:127 ℃) as outside the substrate layer, obtain pressure-sensitive adhesive tape in the mode identical with embodiment 1.The bounding force that described band has when being 180 ° of peel angles for the copper cash frame is the 0.9N/19mm width, and to have 180 ° of peel angles of bounding force when being to(for) the copper cash frame after 1 hour 200 ℃ of lower heating be about 2.5N/19mm width.In addition, the bounding force that has when being 180 ° of peel angles for sealing resin after resin-sealed of described band is 2.9N/19mm.
Pressure sensitive adhesive has 5% weightless temperature under 270 ℃, and the generations of heating pressure sensitive adhesives gas after 1 hour are 0.03mg/g under 200 ℃.In addition, substrate layer is 1.9% in the degree of heat-shrinkage of 180 ℃ of lower heating after 3 hours.
Embodiment 6
(KAPTON 50H (trade(brand)name), by Du pont-Toray Co., Ltd. makes, thermal linear expansion coefficient: 2.7 * 10 except the polyimide film that uses 12.5 μ m thickness -5/ K, Tg:404 ℃) as substrate layer, and the thickness of pressure sensitive adhesive layer changed into beyond the 40 μ m, obtain pressure-sensitive adhesive tape in the mode identical with embodiment 1.The bounding force that described band has when being 180 ° of peel angles for the copper lead frame is the 3.8N/19mm width, and to have 180 ° of peel angles of bounding force when being to(for) the copper lead frame after 1 hour 200 ℃ of lower heating be about 5.5N/19mm width.In addition, the bounding force that has when being 180 ° of peel angles for sealing resin after resin-sealed of described band is 6.5N/19mm.
Pressure sensitive adhesive has 5% weightless temperature under 330 ℃, and the generations of heating pressure sensitive adhesives gas after 1 hour are 0.32mg/g under 200 ℃.In addition, substrate layer is 0.35% in the degree of heat-shrinkage of 180 ℃ of lower heating after 3 hours.
Embodiment 7
Except using by 2 weight part platinum catalysts being added to 100 weight part silicone pressure sensitive adhesives " SD-4560 " (by Dow Corning Toray Silicone Co., Ltd. make) material that obtains is as beyond the pressure sensitive adhesive, obtains pressure-sensitive adhesive tape in the mode identical with embodiment 1.The storage modulus that pressure sensitive adhesive has under 200 ℃ is 8.0 * 10 3Pa.The bounding force that described band has to 180 ° of peel angles of copper lead frame the time is the 1.2N/19mm width, and to have 180 ° of peel angles of bounding force when being to(for) the copper lead frame after 1 hour 200 ℃ of lower heating be about 3.4N/19mm width.In addition, the bounding force that has when being 180 ° of peel angles for sealing resin after resin-sealed of described band is 4.1N/19mm.
Pressure sensitive adhesive has 5% weightless temperature under 320 ℃, and the generations of heating pressure sensitive adhesives gas after 1 hour are 0.12mg/g under 200 ℃.In addition, substrate layer is 0.35% in the degree of heat-shrinkage of 180 ℃ of lower heating after 3 hours.
Embodiment 8
Except using by adding 0.6 weight part benzoyl peroxide to 100 weight part silicone pressure sensitive adhesives " SD-4284 " (by Dow Corning Toray Silicone Co. as linking agent, Ltd. make) material that obtains is as beyond the pressure sensitive adhesive, obtains pressure-sensitive adhesive tape in the mode identical with embodiment 1.The bounding force that described band has the copper lead frame is the 7.0N/19mm width, and the storage modulus that pressure sensitive adhesive has under 200 ℃ is 6.0 * 10 4Pa.Described band has 180 ° of peel angles of bounding force when being to(for) the copper lead frame 200 ℃ of lower heating after 1 hour be about 10.5N/19mm width.In addition, the bounding force that has when being 180 ° of peel angles for sealing resin after resin-sealed of described band is 12.3N/19mm.
Pressure sensitive adhesive has 5% weightless temperature under 310 ℃, and the generations of heating pressure sensitive adhesives gas after 1 hour are 0.21mg/g under 200 ℃.In addition, substrate layer is 0.35% in the degree of heat-shrinkage of 180 ℃ of lower heating after 3 hours.
Embodiment 9
Except using by 2 weight part isocyanate crosslinkings as linking agent being added to material that polymkeric substance (wherein 3 parts by weight of acrylic acid are copolymerized to 100 parts by weight of acrylic acid 2-ethylhexyls) obtains as the pressure sensitive adhesive, prepare the thermotolerance pressure-sensitive adhesive tape in the mode identical with embodiment 1.The storage modulus that pressure sensitive adhesive has under 200 ℃ is 7.0 * 10 5Pa, and 5% weightless temperature is 230 ℃.
The bounding force that described band has when being 180 ° of peel angles for the copper lead frame is the 1.2N/19mm width, and to have 180 ° of peel angles of bounding force when being to(for) the copper lead frame after 1 hour 200 ℃ of lower heating be about 2.5N/19mm width.In addition, the bounding force that has when being 180 ° of peel angles for sealing resin after resin-sealed of described band is 5.5N/19mm.
Generation at 200 ℃ of lower heating pressure sensitive adhesives gas after 1 hour is 0.65mg/g.In addition, substrate layer is 0.35% in the degree of heat-shrinkage of 180 ℃ of lower heating after 3 hours.
Embodiment 10
Except using by 2 weight part platinum catalysts being added to 100 weight part silicone pressure sensitive adhesives " SD-4585 " (by Dow Corning Toray Silicone Co., Ltd. make) material that obtains is as beyond the pressure sensitive adhesive, obtains pressure-sensitive adhesive tape in the mode identical with embodiment 1.Generation at 200 ℃ of lower heating pressure sensitive adhesives gas after 1 hour is 1.2mg/g.In addition, to have the storage modulus under 200 ℃ be 1.0 * 10 to pressure sensitive adhesive 5Pa.The bounding force that described band has when being 180 ° of peel angles for the copper lead frame is the 1.3N/19mm width, and to have 180 ° of peel angles of bounding force when being to(for) the copper lead frame after 1 hour 200 ℃ of lower heating be about 2.0N/19mm width.In addition, the bounding force that has when being 180 ° of peel angles for sealing resin after resin-sealed of described band is 4.0N/19mm.
It is 310 ℃ that pressure sensitive adhesive has 5% weightless temperature, and substrate layer is 0.35% in the degree of heat-shrinkage of 180 ℃ of lower heating after 3 hours.
Test example 1
Confirm by the following method the sample, wire-bonded degree of above-mentioned preparation, the separability of covering (masking) property and band when resin-sealed.The results are shown in the following table 1 of each test.
The evaluation of＜wire-bonded 〉
Use at normal temperatures tape lamination device " PL-55 TRM " (being made by Nitto Denko Corporation), the thermotolerance pressure-sensitive adhesive tape is adhered to outside fritter (outer pat) side of copper lead frame (arranging 4 * 4 one side 16 pin type QFN with portion of terminal (terminal areas) of silver-colored plating in the above).Use epoxy-phenol type silver to stick with paste the matrix pad area that semi-conductor chip is adhered to lead frame, and by being fixed in 1 hour 180 ℃ of lower curing.
From thermotolerance pressure-sensitive adhesive tape side in the vacuum attraction mode with lead frame attachment to the heat block that is heated to 200 ℃, then by keep the peripheral part of lead frame to fix with clockwork spring clamper (wind clamper).Use 115KHz wire bonder (UTC-300B1 is made by Shinkawa Ltd.) to use under the following conditions the gold thread of 25 μ m diameters (GMG-25, by Tanaka Holdings Co., Ltd. makes) with they wire-bonded.
The first activating pressure: 100g
First engages application time: 10 milliseconds
The second activating pressure: 150g
Second engages application time: 15 milliseconds
Tensile strength (Pull Strength) by the lead-in wire for preparing with the aforesaid method wire-bonded is measured with tensile testing machine (Bonding Tester PTR-30 is made by Rhesca Corporation).When satisfying following two kinds of conditions, it is evaluated as " success ", when the lead frame to each sample carries out the wire-bonded of 100 lead-in wires, the successful quantity that goes between/leaded quantity is appointed as " success ratio ".
(condition)
Condition 1: the fracture of tension test is not that the first joint (1st bond) and second engages the interfacial fracture of (2nd bond).
Condition 2: tensile strength shows the value that 4gf is above.
＜cover the evaluation of performance 〉
The thermotolerance pressure-sensitive adhesive tape is adhered to the outside fritter side of the copper lead frame of one side 16 pin type QFN that are arranged with 4 * 4 portion of terminal with silver-colored plating on it.
Lead frame wire-bonded under above-mentioned wire-bonded condition with pressure-sensitive adhesive tape, then use epoxy sealing resin (HC-300, made by Nitto Denko Corporation) in the time of 175 ℃ in preheating: 40 seconds, injection length: 11.5 seconds and set time: use forming machine (Model-Y-series is made by TOWA) moulding under 120 seconds the condition.Peel off the thermotolerance band, and confirm resin leakage.This test is applied to 30 lead frames, and confirms to occur the ratio of resin leakage.
The evaluation of＜adhesive residue 〉
Visual observation is used for estimating sealing resin face and the lead frame face with release surface of the sample of covering performance.In table 1, when observing adhesive residue, be assigned therein as "+", and when not observing adhesive residue, be assigned therein as "-".In addition, in the time can not measuring, be assigned therein as " ND ".
＜cycling processability 〉
The thermotolerance pressure-sensitive adhesive tape is adhered to the outside fritter side of the copper lead frame of one side 16 pin type QFN that are arranged with 4 * 4 portion of terminal with silver-colored plating on it, and under 180 ° of peel angles, peels off.Confirm to peel off the shape of rear lead frame.In the table 1, when not observing the distortion of lead frame shape, be assigned therein as " can ".
Performance and the evaluation result of the band of preparation have been shown in the following table 1.The sample of embodiment 1 to 5 satisfies all properties.Yet, in comparative example 1 and 2, because the contraction of substrate layer occurs in wire bonding process, so do not obtain sufficient wire-bonded and cover performance.
Among the embodiment 6, the thickness of pressure sensitive adhesive layer is large, and in embodiment 7, the Young's modulus of pressure sensitive adhesive is low.Therefore, although unconfirmed to problem is arranged covering in the performance of sealing resin, do not obtain sufficient wire-bonded.
Among the embodiment 8, too high to the bounding force of lead frame.Therefore, when band is stripped from, confirm the distortion of lead frame.In addition, because heat rear bounding force to lead frame and high to the bounding force of sealing resin, when band is stripped from, confirm adhesive residue at lead frame and sealing resin.
Among the embodiment 9, the decomposition temperature of pressure sensitive adhesive is low.Therefore, when resin-sealed rear band is stripped from, confirm adhesive residue at lead frame and sealing resin.
Among the embodiment 10, discharge quantity is large.Therefore, can not wire-bonded.
The above results of gained is shown in the following table 1.
From the above results, obtain the thermotolerance pressure-sensitive adhesive tape, it can suitably prevent from sealing the resin leakage in the step, and is difficult to have problems in the series of steps of producing the MAP type that wherein seals simultaneously a large amount of packagies.
Table 1
Figure BDA0000141712950000291
Table 1 (continuing)
Figure BDA0000141712950000301
Embodiment 11
Use the polyimide film (KAPTON 100H (trade(brand)name), by Du pont-Toray Co., Ltd. makes, by Tg:402 ℃ of DMA method) of 25 μ m thickness as substrate layer.Add 100 weight part silicone pressure sensitive adhesives " SD-4586 " (by Dow Corning Toray Silicone Co., Ltd. makes) and 2.5 weight part platinum catalysts to toluene, and be scattered in the toluene equably.The gained dispersion liquid is applied over substrate layer, subsequent drying.Therefore, preparation has the approximately thermotolerance pressure-sensitive adhesive tape of the pressure sensitive adhesive layer of 10 μ m thickness.Cover pressure sensitive adhesive with Teflon (registered trademark), and at room temperature impregnated in 1 week of toluene.Gel fraction before and after the dipping is measured by changes in weight.As a result, gel fraction is 72.1%.
Use at normal temperatures the hand roller, the thermotolerance pressure-sensitive adhesive tape is adhered on it outside fritter side (on the face of the lead frame opposite with having matrix pad face) of the copper lead frame of one side 16 pin type QFN that arrange 4 * 4 portion of terminal with silver-colored plating.
In order in the semi-conductor chip installation process, to repeat heat treated purpose, under 200 ℃, solidified lead frames 1 hour.
From thermotolerance pressure-sensitive adhesive tape side in the vacuum attraction mode with lead frame attachment to the heat block that is heated under 225 ℃, then assign to by the periphery that keeps lead frame with the clockwork spring clamper further fixing.Use 115KHz wire bonder (UTC-300B1 is made by Shinkawa Ltd.) uses the gold thread (GMG-25, by Tanaka Holdings Co., Ltd. makes) with 25 μ m diameters with those wire-bonded under the following conditions.
The first activating pressure: 100g
First engages application time: 10 milliseconds
The second activating pressure: 150g
Second engages application time: 15 milliseconds
With epoxy sealing resin (HC-300 B6, made by Nitto Denko Corporation) in the time of 175 ℃ in the preheating setting: 3 seconds, injection length: 12 seconds and set time: use forming machine (Model-Y series is made by TOWA) with those moulding under 90 seconds the condition.Peel off the thermotolerance pressure-sensitive adhesive tape.Therefore, preparation QFN package.
Embodiment 12
With 100 parts by weight of acrylic acid butyl ester monomers and 5 parts by weight of acrylic acid monomers as consisting of monomer copolymerization to obtain acrylic copolymer.With 1.0 weight part epoxy crosslinking agent (Tetrad-C, by Mitsubishi Gas Chemical Company, Inc. make) and 1.5 weight part isocyanate crosslinking (CORONATE-L, by Nippon Polyurethane Industry Co., Ltd. makes) add 100 parts by weight of acrylic acid analog copolymers to the preparation pressure sensitive adhesive.Measure the gel fraction of pressure sensitive adhesive in the mode identical with embodiment 11.Gel fraction is 97.8%.Afterwards, prepare the QFN package in the mode identical with embodiment 11.
Comparative example 3
Except using polyetherimde films (the SUPERIO UT of 25 μ m thickness, by Mitsubishi Resin Co., Ltd. makes, Tg:239 ℃ (according to the DMA method)) as beyond the substrate layer, prepare the QFN package in the mode identical with embodiment 11.
Comparative example 4
Except use as the same polyether imide film of use in the comparative example 3 as the substrate layer, prepare the QFN package in the mode identical with embodiment 12.
Embodiment 13
Except not adding epoxy crosslinking agent in the pressure sensitive adhesive layer, prepare the QFN package in the mode identical with embodiment 12.As the result who measures the gel fraction of pressure sensitive adhesive in the mode identical with embodiment 11, gel fraction is 46.2%.
Comparative example 5
Except use as the same polyether imines film of use in the comparative example 3 as the substrate layer, prepare the QFN package in the mode identical with embodiment 13.
Test example 2
The success ratio (being expressed as " W/B " in the table 2) that measuring lead wire engages in the QFN of above-mentioned preparation package and after machining, peel off with the time adhesive residue generation.
By 64 pins on all limits of 16 pin type QFN are on one side carried out the success ratio that wire-bonded obtains wire-bonded, and calculated by the quantity of the pin that can configure exactly lead-in wire to it.QFN package after peeling off by the visual observation band is confirmed the generation of adhesive residue.
Acquired results is shown in the following table 2.
Table 2
Figure BDA0000141712950000331
Among the embodiment 11, the success ratio great majority of wire-bonded are good, and peelable band and do not have adhesive residue.
In embodiment 12, similar to Example 11, the success ratio great majority of wire-bonded are good, and peelable band and do not have adhesive residue.
In the comparative example 3 and 4, peelable band and do not have adhesive residue.Yet because the glass transition point (Tg) of base material close to the temperature in the wire-bonded, is therefore compared with 12 with embodiment 11, the success ratio of wire-bonded reduces.
In embodiment 13 and the comparative example 5, because the gel fraction of pressure sensitive adhesive is low and its elasticity is low, therefore can not carry out wire-bonded at all, and when band is peeled off, on whole surface adhesive residue occur.
From the above results, can be provided for producing the thermotolerance pressure-sensitive adhesive tape of semiconducter device, it suppresses because the substrate performance noticeable change of using the heat in the step process to cause, and peelable and do not have an adhesive residue after use.
Embodiment 14
Use the polyimide film (KAPTON 100H (trade(brand)name), by Du pont-Toray Co., Ltd. makes) of 25 μ m thickness as substrate layer.Add silicone pressure sensitive adhesive (SD-4560, by Dow Coring Toray Silicone Co., Ltd. makes) and the 2.5 weight part platinum catalysts of 100 weight parts to toluene, and be scattered in equably wherein with the preparation dispersion liquid.Dispersion liquid is applied over the one side of substrate layer, and dry has thickness as the about thermotolerance pressure-sensitive adhesive tape of the pressure sensitive adhesive layer of 15 μ m take preparation.Be that the PET barrier film (MRS-50S, by Mitsubishi Chemical Polyester Film Co., Ltd. makes) of approximately 50 μ m is adhered to the thermotolerance pressure-sensitive adhesive tape with thickness.Therefore, preparation thermotolerance pressure-sensitive adhesive tape.The barrier film peeling force (stripping strength) that described band has when 180 ° of peel angles is 0.20N/50mm, and the barrier film peeling force that has when 90 ° of peel angles is 0.30/50mm (detachment rate: 300mm/ minute).
Embodiment 15
Use the polyimide film (KAPTON 100H (trade(brand)name), by Du pont-Toray Co., Ltd. makes) of 25 μ m thickness as substrate layer.The multipolymer and the 0.4 weight part epoxy crosslinking agent that 100 weight parts are comprised butyl acrylate and vinylformic acid (100 weight parts and 5 weight parts) add toluene to, and are scattered in equably wherein with the preparation dispersion liquid.Dispersion liquid is applied over the one side of substrate layer, and dry has thickness as the about thermotolerance pressure-sensitive adhesive tape of the pressure sensitive adhesive layer of 15 μ m take preparation.Be that the PET barrier film (#38 CERAPEEL, by Toray Advanced Film Co., Ltd. makes) of approximately 38 μ m is adhered to the thermotolerance pressure-sensitive adhesive tape with thickness.Therefore, preparation thermotolerance pressure-sensitive adhesive tape.The barrier film peeling force that described band has when 120 ° of peel angles is 0.10N/50mm, and the barrier film peeling force that has when 150 ° of peel angles is 0.05/50mm (detachment rate: 300mm/ minute).
Embodiment 16
Be PET barrier film (the #38 CERAPEEL of approximately 38 μ m except used thickness, by Toray Advanced Film Co., Ltd. make) as barrier film and be adhered to beyond the thermotolerance pressure-sensitive adhesive tape, obtain the thermotolerance pressure-sensitive adhesive tape in the mode identical with embodiment 1.The barrier film peeling force that described band has when 180 ° of peel angles is 1.80N/50mm, and the barrier film peeling force that has when 90 ° of peel angles is 2.40N/50mm (detachment rate: 300mm/ minute).
Embodiment 17
Be PET film (the LUMIRROR #38 S-10 of approximately 38 μ m except used thickness, by Toray Polyester Film Co., Ltd. make) as barrier film and be adhered to beyond the thermotolerance pressure-sensitive adhesive tape, obtain the thermotolerance pressure-sensitive adhesive tape in the mode identical with embodiment 2.The barrier film peeling force that described band has when 120 ° of peel angles is 3.50N/50mm, and the barrier film peeling force that has when 150 ° of peel angles is 3.0N/50mm (detachment rate: 300mm/ minute).
Test example 3
Use the lead frame burr to prevent that moulding from covering tape lamination device (PL-55TRM, by Nitto Seiki Co., Ltd. make), each thermotolerance pressure-sensitive adhesive tape of producing among the embodiment 14 to 17 is adhered to the outside fritter side that one side 16 pin type QFN are arranged in the copper lead frame of Unit 4 * Unit 4.Afterwards, carry out following operation to obtain single QFN N-type semiconductorN device:
(a) bond semiconductor chip, and curing (180 ℃, 1 hour)
(b) wire-bonded
(c) moulding (175 ℃, preheating: 40 seconds, injection length: 11.5 seconds, set time: 120 seconds)
(d) peel off the thermotolerance pressure-sensitive adhesive tape
(e) moulding after fixing (175 ℃, 3 hours)
(f) cut off (cutting apart separately) with dicer
Observations about the resin leakage of thus obtained QFN is shown in following table 3.
Table 3
Figure BDA0000141712950000361
In the thermotolerance pressure-sensitive adhesive tape of embodiment 14 and 15, not with the departing from and wrinkling with after bonding of position, and the resin leakage when moulding not occuring.
On the other hand, in the thermotolerance pressure-sensitive adhesive tape of embodiment 16 and 17, when peeling off barrier film owing to large barrier film peeling force produces the band position of departing from and wrinkling.In addition, warpage occurs in the unrelieved stress by band in lead frame.As a result, clamping lead frame suitably not during moulding, and resin leakage occurs in major part.
Even pressure-sensitive adhesive tape of the present invention also suitably prevents from sealing the resin leakage in the step, and is difficult to produce the problem in the series of steps in MAP-QFN uses, and the separability after resin-sealed is also excellent.Therefore, described band can be widely used in the method for producing semiconducter device.
Although describe the present invention in detail with reference to its specific embodiments, it will be apparent for a person skilled in the art that under the prerequisite that does not break away from scope and can carry out various changes and improvements to it.
The Japanese patent application 2010-201905 that the application submitted to based on September 9th, 2010 incorporates its full content into this paper for your guidance.

Claims (18)

1. pressure-sensitive adhesive tape, described pressure-sensitive adhesive tape is used for resin-sealed in producing resin-encapsulated semiconductor device, and described pressure-sensitive adhesive tape comprises:
Substrate layer, described substrate layer do not have the second-order transition temperature in 260 ℃ of following temperature ranges, and
Pressure sensitive adhesive layer, described pressure sensitive adhesive layer is laminated on the described substrate layer.
2. pressure-sensitive adhesive tape according to claim 1, wherein said substrate layer does not have the second-order transition temperature in 300 ℃ of following temperature ranges.
3. pressure-sensitive adhesive tape according to claim 1 and 2, wherein said substrate layer has the thickness of 5 to 100 μ m.
4. according to claim 1 to 3 each described pressure-sensitive adhesive tapes, wherein said substrate layer is when the degree of heat-shrinkage that has in the time of 3 hours 180 ℃ of lower heating below 0.40%.
5. according to claim 1 to 4 each described pressure-sensitive adhesive tapes, wherein said pressure sensitive adhesive layer only is laminated on the one side of described substrate layer.
6. according to claim 1 to 5 each described pressure-sensitive adhesive tapes, wherein said pressure sensitive adhesive layer has the thickness of 2 μ m to 50 μ m.
7. according to claim 1 to 6 each described pressure-sensitive adhesive tapes, the thickness of wherein said pressure sensitive adhesive layer (B) is below 3 with the ratio (B/A) of the thickness (A) of described substrate layer.
8. according to claim 1 to 7 each described pressure-sensitive adhesive tapes, 5% weightless temperature the when pressure sensitive adhesive that wherein consists of described pressure sensitive adhesive layer has according to the thermogravimetric analysis under the following measuring condition is more than 250 ℃, and described measuring condition is: temperature rise rate is that 10 ℃/minute, atmosphere gas are that atmosphere and gas flow are 200ml/ minute.
9. according to claim 1 to 8 each described pressure-sensitive adhesive tapes, wherein when the pressure sensitive adhesive that consists of described pressure-sensitive adhesive tape be below the 1.0mg/g gas generated in the time of 1 hour of 200 ℃ of lower heating.
10. according to claim 1 to 9 each described pressure-sensitive adhesive tapes, its bounding force that has when being 180 ° of peel angles for lead frame is 0.05 to 6.0N/19mm width.
11. according to claim 1 to 10 each described pressure-sensitive adhesive tapes, described pressure-sensitive adhesive tape is when when then 200 ℃ of lower heating were cooled to normal temperature in 1 hour, the bounding force that has when being 180 ° of peel angles for lead frame is 0.1 to 6.0N/19mm width.
12. according to claim 1 to 11 each described pressure-sensitive adhesive tapes, the bounding force that described pressure-sensitive adhesive tape has when being 180 ° of peel angles for sealing resin is below the 10.0N/19mm width.
13. according to claim 1 to 12 each described pressure-sensitive adhesive tapes, the storage modulus that wherein said pressure sensitive adhesive layer has under 200 ℃ is 0.50 * 10 5More than the Pa.
14. according to claim 1 to 13 each described pressure-sensitive adhesive tapes, the pressure sensitive adhesive that wherein consists of described pressure sensitive adhesive layer is silicone pressure sensitive adhesive, acrylic psa or rubber-like pressure sensitive adhesive.
15. according to claim 1 to 14 each described pressure-sensitive adhesive tapes, the pressure sensitive adhesive that wherein consists of described pressure sensitive adhesive layer has the gel fraction more than 60%.
16. to 15 each described pressure-sensitive adhesive tapes, it further comprises the stripping film that contacts with described pressure sensitive adhesive layer according to claim 1, described stripping film satisfy following require in (a) to (d) one of at least:
(a) stripping strength when 90 °+15 ° of peel angles is below the 1.5N/50mm width,
(b) stripping strength when 120 ° ± 15 ° of peel angles is below the 1.2N/50mm width,
(c) stripping strength when 150 ° ± 15 ° of peel angles is below the 1.0N/50mm width, and
(d) stripping strength when 180 °+0 ° to 180 °-15 ° of peel angles is below the 1.0N/50mm width.
17. to 16 each described pressure-sensitive adhesive tapes, in its method for the production of resin-encapsulated semiconductor device, described method comprises according to claim 1:
Described pressure-sensitive adhesive tape is adhered to the face of the die-attach area with portion of terminal and matrix pad, described the face with the described matrix pad of arranging of described die-attach area is opposite;
The semi-conductor chip matrix that will have electronic pads joins on the described matrix pad of described die-attach area;
Be electrically connected the joint of described die-attach area portion of terminal and the described electronic pads on described semi-conductor chip with bonding wire; With
Seal the face that described semi-conductor chip is set of described die-attach area with sealing resin.
18. a method of producing resin-encapsulated semiconductor device, described method comprises:
To be adhered to according to claim 1 the face of the die-attach area with portion of terminal and matrix pad to 16 each described pressure-sensitive adhesive tapes, described the face with the described matrix pad of arranging of described die-attach area is opposite;
The semi-conductor chip matrix that will have electronic pads joins on the described matrix pad of described die-attach area;
Be electrically connected joint and the electronic pads on described semi-conductor chip of described die-attach area portion of terminal with bonding wire; With
Seal the face that described semi-conductor chip is set of described die-attach area with sealing resin.
CN2012100600923A 2012-03-08 2012-03-08 Pressure-sensitive adhesive tape for resin sealing and production method for resin sealing type semiconductor device Pending CN103305138A (en)

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CN106244034A (en) * 2015-06-03 2016-12-21 日东电工株式会社 Mask pressure-sensitive adhesive tape
CN110828319A (en) * 2019-12-10 2020-02-21 石家庄恒融世通电子科技有限公司 Method for preparing sealing ring of integrated circuit packaging shell
TWI712667B (en) * 2015-09-01 2020-12-11 日商琳得科股份有限公司 Adhesive sheet
TWI738716B (en) * 2016-05-16 2021-09-11 日商寺岡製作所股份有限公司 Adhesive composition and adhesive tape

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CN1645580A (en) * 2004-01-23 2005-07-27 日东电工株式会社 Manufacture of semiconductor device and heat resistant adhesive tape used therefor
CN102061136A (en) * 2009-11-12 2011-05-18 日东电工株式会社 Adhesive tape for resin-encapsulating and method of manufacture of resin-encapsulated semiconductor device

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TW464991B (en) * 1999-04-12 2001-11-21 Nitto Denko Corp Semiconductor chip resin-sealing method and adhesive tape for pasting lead frames
CN1469445A (en) * 2002-06-10 2004-01-21 日东电工株式会社 Method for producing semiconductor and heat-resisting pressure-sensitive adhesive tape
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CN106244034A (en) * 2015-06-03 2016-12-21 日东电工株式会社 Mask pressure-sensitive adhesive tape
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CN110828319A (en) * 2019-12-10 2020-02-21 石家庄恒融世通电子科技有限公司 Method for preparing sealing ring of integrated circuit packaging shell
CN110828319B (en) * 2019-12-10 2021-08-31 石家庄恒融世通电子科技有限公司 Method for preparing sealing ring of integrated circuit packaging shell

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