TW201903091A - Semiconductor processing tape - Google Patents

Abstract

This tape for semiconductor processing includes a substrate layer, an adhesive layer, and a thermosetting adhesive layer, layered in this order. After being subjected to a curing treatment for 1 hour at 130 DEG C, the shrinkage rate of the adhesive layer is less than 2% and the elastic modulus of the adhesive layer under a heated environment is less than 5 MPa. The tape for semiconductor processing can be used as a dicing/die-bonding tape, and also can be used as a tape for temporary anchoring during semiconductor device production, for instance.

Description

Semiconductor processing tape

The present invention relates to a tape for semiconductor processing.

In recent years, demands for miniaturization, weight reduction, and high functionality of electronic devices have increased. In accordance with these requirements, there is a demand for miniaturization, thickness reduction, and high-density mounting of semiconductor devices constituting electronic devices. A semiconductor device is manufactured through the following steps: a sealing step of sealing a semiconductor wafer fixed on a substrate, glass, or a temporary fixing material with a resin; and a dicing step of dicing the sealed semiconductor wafer as necessary . In the manufacturing process, there are cases where the step of polishing the wafer is performed. These steps are performed in a state where a wafer, a substrate, or the like is covered with a protective tape. The protective tape is usually attached to a surface to be protected before a specific processing step, and is peeled off after the processing step.

Patent Document 1 discloses a heat-resistant adhesive sheet for semiconductor manufacturing used in the manufacture of a substrateless semiconductor package without using a lead frame made of metal, an adhesive used in the sheet, and the use of the sheet Method of manufacturing a semiconductor device. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2011-129649

[Problems to be Solved by the Invention] The present inventors have studied a case in which a dicing die bonding tape previously used is used in various steps in the manufacturing process of a semiconductor device. Strap for temporary fixing. If one kind of tape can be used for both the die-cutting die-bonding tape and the temporarily fixing tape, the versatility of the tape can be improved, and a semiconductor device can be efficiently manufactured.

As one of the characteristics that a tape (hereinafter, referred to as a "semiconductor processing tape") that can be applied in various steps in the manufacturing process of a semiconductor device should include heat resistance. According to research by the present inventors, since the adhesive layer in the adhesive sheet described in Patent Document 1 contains a rubber component as a main component, heat resistance is not sufficient, and there is room for improvement in this respect.

Examples of other characteristics that the semiconductor processing tape should have include excellent releasability. Conventionally, the tape used for temporary fixation is designed so that an adhesive layer may have moderate flexibility from a viewpoint of ensuring moderate peelability. However, merely providing flexibility to the adhesive layer may not necessarily achieve excellent peelability. Specifically, there is a problem that a residue is generated during the peeling step.

The present invention has been made in view of the above problems, and an object thereof is to provide a semiconductor processing tape having excellent versatility in a semiconductor manufacturing process. [Means for solving problems]

The tape for semiconductor processing of the present invention is sequentially laminated with a base material layer, an adhesive layer, and a thermosetting adhesive layer, and after being cured at 130 ° C for 1 hour, the shrinkage of the adhesive layer is less than 2%, and The thermoelastic coefficient of the subsequent layer is less than 5 MPa. Since the adhesive layer that has been hardened at 130 ° C for 1 hour satisfies these conditions, the semiconductor processing tape can be applied to various processing steps in the manufacturing process of a semiconductor device. Specifically, heat resistance and peelability required in the various processing steps can be imparted to the adhesive layer.

After performing the hardening treatment at 130 ° C. for 1 hour, the peeling and peeling force of the adhesive layer from the wafer is preferably 15 N / m or more. When the adhesion layer satisfies this requirement, the adhesion to the wafer can be sufficiently ensured.

Examples of applications other than the die-bonding tape of the semiconductor processing tape of the present invention include temporary fixing of a substrate and a wafer. That is, the semiconductor processing tape of the present invention can be used for temporarily fixing a substrate to one surface of an adhesive layer in a manufacturing process of a semiconductor device, and for temporarily removing a wafer after peeling a substrate layer and an adhesive layer. It is fixed on the other side of the adhesive layer. For example, as described above, when a semiconductor processing tape is used for temporary fixed use, none of the base material layer, the adhesive layer, and the adhesive layer remain on the semiconductor device to be finally manufactured.

The adhesive layer preferably contains a thermoplastic resin, a thermosetting resin, a hardening accelerator, and a filler. In this case, when the content of the thermoplastic resin in the adhesive layer is 100 parts by mass, the content of the thermosetting resin in the adhesive layer is preferably 1 to 40 parts by mass. When the content of the thermoplastic resin in the adhesive layer is 100 parts by mass, the content of the filler in the adhesive layer is preferably 1 to 330 parts by mass. Adhesive layers satisfying these requirements are applied to various processing steps in the manufacturing process of a semiconductor device, and the heat resistance and peelability can be further improved stably.

The adhesive layer may be an Ultra Violet (UV) type or a non-UV type. [Effect of the invention]

According to the present invention, there is provided a semiconductor processing tape having excellent versatility in a semiconductor manufacturing process.

Hereinafter, embodiments of the present invention will be described with reference to drawings as appropriate. The present invention is not limited to the following embodiments. In this specification, a (meth) acryl group means an acryl group or a methacryl group.

<Semiconductor Processing Tape> FIG. 1 is a cross-sectional view schematically showing a semiconductor processing tape according to this embodiment. The semiconductor processing tape 10 shown in FIG. 1 is sequentially laminated with a base material layer 1, an adhesive layer 2, and a thermosetting adhesive layer 3. The semiconductor processing tape 10 can be applied to the use of both a dicing die-bonding tape and a temporary fixing tape in the manufacturing process of a semiconductor device. In order to achieve this, after the semiconductor processing tape 10 is hardened at 130 ° C. for 1 hour, the shrinkage of the layer 3 is less than 2%, and then the coefficient of thermal elasticity of the layer 3 is less than 5 MPa. Since the adhesive layer 3 which has been hardened at 130 ° C. for 1 hour satisfies these conditions, the semiconductor processing tape 10 can provide the adhesive layer 3 with heat resistance and peeling required in various processing steps in the manufacturing process of the semiconductor device. Sex.

As described above, after the hardening treatment was performed at 130 ° C. for 1 hour, the shrinkage ratio of the subsequent layer 3 was less than 2%. The value is preferably 1.8% or less, and more preferably 1.6% or less. With this value being less than 2%, in the manufacturing process of the semiconductor device, even if heat is applied to the adhesive layer 3 in a state where the wafer or substrate is temporarily fixed to the adhesive layer 3, positional displacement can be sufficiently suppressed.

The shrinkage of the layer 3 can be determined as follows. The semiconductor processing tape 10 is cut into a predetermined size (for example, 100 mm × 100 mm), and the base material layer 1 and the adhesive layer 2 are peeled off therefrom to prepare a sample including only the adhesive layer 3. This was heated at 130 ° C for 1 hour and hardened, and the size of the sample after the hardening treatment was measured. The area of the sample before thermal curing and the area of the sample after thermal curing are substituted into the following equations to calculate the shrinkage. Shrinkage (%) = (sample area after hardening) / (sample area before hardening) × 100

As described above, after performing the hardening treatment at 130 ° C. for 1 hour, the thermoelastic coefficient of the subsequent layer 3 is less than 5 MPa. The value is preferably 4.5 MPa or less, and more preferably 4 MPa or less. When the value is less than 5 MPa, even in a state where a wafer or a substrate is temporarily fixed to the bonding layer 3 during the manufacturing process of the semiconductor device, the bonding layer 3 has moderate flexibility, Thereby, excellent peelability can be achieved. The lower limit value of the thermoelastic coefficient of the layer 3 is, for example, 1 MPa.

The thermoelastic coefficient of the layer 3 can be determined as follows. The semiconductor processing tape 10 is cut to a predetermined size, and the base material layer 1 and the adhesive layer 2 are peeled off therefrom, thereby preparing a sample including only the adhesive layer 3. It was heated at 130 ° C for 1 hour and hardened. The thus obtained hardened adhesive layer 3 is cut into a predetermined size (for example, 4 mm × 30 mm), thereby obtaining a sample. The measurement was performed using a dynamic viscoelasticity measuring device of this sample. That is, a tensile load is applied to the sample, and the measurement is performed at a frequency of 10 Hz and a temperature increase rate of 10 ° C / min within a range of -50 ° C to 300 ° C. The coefficient of elasticity at a temperature of 100 ° C was set as the coefficient of thermal elasticity.

From the viewpoint of sufficiently securing the adhesiveness of the adhesive layer 3 to the wafer, the peeling and peeling force of the adhesive layer 3 to the wafer is preferably 15 N / m or more after curing at 130 ° C for 1 hour. , More preferably 20 N / m to 200 N / m, and even more preferably 25 N / m to 150 N / m.

The adhesive layer 3 preferably contains a thermoplastic resin, a thermosetting resin, a hardening accelerator, and a filler. When the content of the thermoplastic resin in the adhesive layer 3 is 100 parts by mass, the content of the thermosetting resin in the adhesive layer 3 is preferably 1 to 40 parts by mass, and more preferably 5 to 39 parts by mass. It is more preferably 10 parts by mass to 38 parts by mass. The content of the hardening accelerator in the next layer 3 is preferably 0.01 to 3 parts by mass, more preferably 0.02 to 2 parts by mass, and even more preferably 0.03 to 1 part by mass. The content of the filler in the next layer 3 is preferably 1 part by mass to 330 parts by mass, more preferably 1 part by mass to 300 parts by mass, still more preferably 5 parts by mass to 200 parts by mass, and particularly preferably 10 parts by mass to 100 parts by mass. Serving. The adhesive layer 3 that satisfies these requirements can further stably improve the heat resistance and peelability required in various processing steps in the manufacturing process of the semiconductor device.

The next layer 3 and the adhesive layer 2 are preferably sufficiently tightly adhered in such a manner that no peeling occurs during the processing step. Next, the adhesion between the layer 3 and the adhesive layer 2 can be evaluated by the T-peel strength of the two. The T-shaped peel strength (peeling speed: 50 mm / min) of the subsequent layer 3 and the adhesive layer 2 is preferably 15 N / m or more, and more preferably 16 N / m to 100 N / m. The T-shaped peeling strength can be performed by the following method. After bonding the adhesive layer 3 and the adhesive layer 2 with a laminator, a 25 mm wide incision was cut into the sample to prepare a measurement sample. In this case, when a UV-irradiation-type adhesive is used, UV irradiation is suitably performed. The peeling speed was measured at 50 mm / minute.

Hereinafter, the adhesive layer 3, the adhesive layer 2, and the base material layer 1 constituting the semiconductor processing tape 10 will be described.

[Adhesive Layer] As described above, the adhesive layer 3 preferably contains a thermoplastic resin, a thermosetting resin, a hardening accelerator, and a filler.

(Thermoplastic resin) As the thermoplastic resin, a resin having a thermoplastic property or a resin having a thermoplastic property at least in an uncured state and forming a crosslinked structure after heating can be used. As the thermoplastic resin, a (meth) acrylic copolymer having a reactive group (hereinafter, also referred to as a "containing reaction") is preferred from the viewpoint of excellent shrinkage, heat resistance, and peelability as a tape for semiconductor processing. (Meth) acrylic copolymer ". When the thermoplastic resin contains a (meth) acrylic copolymer containing a reactive group, the adhesive layer 3 may be in a state not containing a thermosetting resin. That is, it may be the aspect including a (meth) acrylic copolymer containing a reactive group, a hardening accelerator, and a filler. The thermoplastic resin may be used singly or in combination of two or more kinds.

Examples of the (meth) acrylic copolymer include (meth) acrylate copolymers such as acrylic glass and acrylic rubber, and acrylic rubber is preferred. The acrylic rubber is preferably formed by copolymerizing a monomer selected from (meth) acrylate and acrylonitrile with acrylate as a main component.

Examples of the (meth) acrylate include methyl acrylate, ethyl acrylate, propyl acrylate, isopropyl acrylate, butyl acrylate, isobutyl acrylate, hexyl acrylate, cyclohexyl acrylate, and 2-ethyl acrylate Hexyl ester, lauryl acrylate, methyl methacrylate, ethyl methacrylate, propyl methacrylate, isopropyl acrylate, butyl methacrylate, isobutyl methacrylate, hexyl methacrylate, Cyclohexyl methacrylate, 2-ethylhexyl methacrylate, lauryl methacrylate, and the like. The (meth) acrylate copolymer is preferably a copolymer containing butyl acrylate and acrylonitrile as copolymerization components, and a copolymer containing ethyl acrylate and acrylonitrile as copolymerization components.

The (meth) acrylic copolymer containing a reactive group is preferably a (meth) acrylic copolymer containing a reactive group containing a (meth) acrylic monomer having a reactive group as a copolymerization component. Such a (meth) acrylic copolymer containing a reactive group can be obtained by copolymerizing a monomer composition containing a (meth) acrylic monomer having a reactive group and the monomer.

From the standpoint of improving heat resistance, the reactive group is preferably an epoxy group, a carboxyl group, an acrylfluorenyl group, a methacrylfluorenyl group, a hydroxyl group, or an epithio group. Among these, the crosslinkability is more preferable. For epoxy and carboxyl.

In this embodiment, the (meth) acrylic copolymer containing a reactive group is preferably an epoxy-containing (meth) acrylic copolymer containing a (meth) acrylic monomer having an epoxy group as a copolymerization component. . In this case, examples of the (meth) acrylic monomer having an epoxy group include glycidyl acrylate, 4-hydroxybutyl acrylate glycidyl ether, 3,4-epoxycyclohexyl methyl acrylate, and methyl Glycidyl acrylate, 4-hydroxybutyl methacrylate glycidyl ether, 3,4-epoxycyclohexyl methyl methacrylate, and the like. From the viewpoint of heat resistance, the (meth) acrylic monomer having a reactive group is preferably glycidyl acrylate or glycidyl methacrylate.

The Tg of the thermoplastic resin is preferably -50 ° C to 50 ° C. When the Tg of the thermoplastic resin is 50 ° C. or lower, it is easy to ensure the flexibility of the adhesive layer 3. In addition, when unevenness is present when adhered to an adherend, it is easy to follow and has moderate adhesiveness. On the other hand, when the Tg of the thermoplastic resin is −50 ° C. or higher, it is easy to suppress the flexibility of the adhesive layer 3 from becoming too high, and excellent handleability, adhesiveness, and peelability can be achieved.

The Tg of the thermoplastic resin is a midpoint glass transition temperature value obtained by differential scanning calorimetry (DSC (Differential Scanning Calorimetry)). The Tg of the thermoplastic resin is specifically measured under the conditions of a heating rate of 10 ° C / min and a measurement temperature of -80 ° C to 80 ° C. The Tg of the thermoplastic resin is measured in accordance with Japanese Industrial Standards (JIS) K 7121: 1987. The intermediate point glass transition temperature calculated by the method.

The weight average molecular weight of the thermoplastic resin is preferably from 100,000 to 2 million. When the weight average molecular weight is 100,000 or more, when it is used for temporary fixed use, it is easy to ensure heat resistance. On the other hand, when the weight average molecular weight is 2 million or less, when it is used for a temporary fixed use, it is easy to suppress the fall of a flow and the fall of adhesiveness. From this viewpoint, the weight average molecular weight of the thermoplastic resin is more preferably 500,000 or more and 2 million or less, and even more preferably 1 million or more and 2 million or less. The weight average molecular weight is a polystyrene conversion value obtained by gel permeation chromatography (GPC) using a calibration curve using standard polystyrene.

In the case where the (meth) acrylic copolymer having a reactive group contains glycidyl acrylate or glycidyl methacrylate as a copolymerization component, based on the total amount of the copolymerization component, the content thereof is preferably 0.1 in total. Mass% to 20% by mass, more preferably 0.5% to 15% by mass, and even more preferably 1.0% to 10% by mass. When the content is within the above range, a higher level of flexibility, adhesiveness, and peelability of the adhesive layer 3 can be achieved at a higher level.

As the (meth) acrylic copolymer having a reactive group as described above, one obtained by a polymerization method such as bead polymerization and solution polymerization can be used. Alternatively, a commercially available product such as HTR-860P-3CSP (trade name, manufactured by Nagase Chemtex) can also be used.

(Thermosetting resin) The thermosetting resin can be used without particular limitation as long as it is a resin that is cured by heat. Examples of the thermosetting resin include epoxy resin, acrylic resin, silicone resin, phenol resin, thermosetting polyimide resin, polyurethane resin, melamine resin, and urea resin. These can be used alone or in combination of two or more.

The epoxy resin is not particularly limited as long as it has a heat-resistant effect for curing. As the epoxy resin, a bifunctional epoxy resin such as a bisphenol A epoxy group, a novolac epoxy resin such as a phenol novolac epoxy resin, a novolac epoxy resin, or the like can be used. As the epoxy resin, a conventionally known one such as a polyfunctional epoxy resin, a glycidylamine-type epoxy resin, a heterocyclic-containing epoxy resin, and an alicyclic epoxy resin can be used.

Examples of the bisphenol A epoxy resin include: Epikote 807, Epikote 815, Epikote 825, Epikote 827, and Epiphan Epikote 828, Epikote 834, Epikote 1001, Epikote 1004, Epikote 1007, Epikote 1009 (all manufactured by Mitsubishi Chemical Co., Ltd.); DER-330, DER-301, DER-361 (all manufactured by Dow Chemical); YD8125, YDF8170 (both Dongdu Chemicals ( Shares) manufacturing) etc. Examples of the phenol novolac-type epoxy resin include Epikote 152 and Epikote 154 (both are manufactured by Mitsubishi Chemical Co., Ltd.); EPPN-201 (Japanese version) Pharmaceutical (stock) manufacturing); DEN-438 (made by Dow Chemical) Examples of o-cresol novolac epoxy resin include: YDCN-700-10 (manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd.); EOCN-102S, EOCN-103S, EOCN-104S, EOCN-1012, EOCN-1025 , EOCN-1027 (all manufactured by Nippon Kayaku Co., Ltd.); YDCN701, YDCN702, YDCN703, YDCN704 (all manufactured by Todo Chemical Co., Ltd.), etc. Examples of the polyfunctional epoxy resin include: Epon 1031S (manufactured by Mitsubishi Chemical Co., Ltd.); Araldite 0163 (manufactured by BASF Japan); Danacauer (Denacol) EX-611, EX-614, EX-614B, EX-622, EX-512, EX-521, EX-421, EX-411, EX-321 (all are nagase chemtex (shares ) Manufacturing) etc. Examples of the amine-type epoxy resin include Epikote 604 (manufactured by Mitsubishi Chemical Co., Ltd.); YH-434 (manufactured by Toto Kasei Co., Ltd.); and TETRAD. -X, TETRAD-C (all manufactured by Mitsubishi Gas Chemical Co., Ltd.); ELM-120 (made by Sumitomo Chemical Co., Ltd.), etc. Examples of the heterocyclic-containing epoxy resin include Araldite PT810 (manufactured by BASF Japan); ERL4234, ERL4299, ERL4221, and ERL4206 (all manufactured by Union Carbide) Wait. These epoxy resins can be used alone or in combination of two or more.

The epoxy resin hardener which is a part of a thermosetting resin component can use a well-known resin generally used. Specific examples include: amines; polyamines; acid anhydrides; polysulfides; boron trifluoride; bisphenol A, bisphenol F, bisphenol S and the like having two or more phenolic hydroxyl groups in one molecule Phenols; phenol novolac resin, bisphenol A novolac resin, cresol novolac resin and other phenol resins. As an epoxy resin hardener, a phenol resin, such as a phenol novolak resin, a bisphenol A novolak resin, and a cresol novolak resin, is especially preferable from a viewpoint of being excellent in the electric-resistance at the time of moisture absorption. Furthermore, the epoxy hardener may be used simultaneously with the epoxy resin, or may be used alone.

Among the phenol resin hardeners, preferably used are: Phenolite LF2882, Phenolite LF2822, Phenolite TD-2090, Phenolite TD -2149, Phenolite VH-4150, Phenolite VH4170 (both manufactured by DIC (stock), trade name); H-1 (manufactured by Minghe Chemical Co., Ltd.), Commodity name); Epi-Cure MP402FPY, Epi-Cure YL6065, Epi-Cure YLH129B65, Milex XL, Milex XLC, Melex (Milex) XLC-LL, Milex RN, Milex RS, Milex VR (all manufactured by Mitsubishi Chemical Co., Ltd., trade names).

(Hardening accelerator) Examples of the hardening accelerator include imidazoles, dicyandiamide derivatives, dihydrazine dicarboxylic acid, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, and 2-ethyl-4 -Methylimidazole-tetraphenylborate, 1,8-diazabicyclo [5.4.0] undecene-7-tetraphenylborate, and the like. These can be used alone or in combination of two or more.

When the adhesive layer 3 contains the (meth) acrylic copolymer which has an epoxy group, it is preferable to contain the hardening accelerator which accelerates hardening of the epoxy group contained in the said acrylic copolymer. Examples of the hardening accelerator that accelerates the hardening of epoxy groups include phenol-based hardeners, acid anhydride-based hardeners, amine-based hardeners, imidazole-based hardeners, imidazoline-based hardeners, triazine-based hardeners, and phosphine-based hardeners. Agent. Among these, from the viewpoints of rapid curing, heat resistance, and releasability, an imidazole-based curing agent that can be expected to reduce the step time and improve the workability. These compounds may be used singly or in combination of two or more kinds.

The content of the hardening accelerator in the adhesive layer 3 is preferably 0.02 to 20 parts by mass, more preferably 0.025 to 10 parts by mass, and still more preferably 0.025 to 3 parts by mass based on 100 parts by mass of the thermoplastic resin. Particularly preferred is 0.025 to 0.05. When the content of the hardening accelerator is within the above range, there is a tendency that the decrease in storage stability can be sufficiently suppressed while improving the hardenability of the adhesive layer 3.

(Inorganic Filler) An inorganic filler can be blended in the adhesive layer 3. Examples of the inorganic filler include metal fillers such as silver powder, gold powder, and copper powder; non-silicon powders such as silica, alumina, boron nitride, titanium oxide, glass, iron oxide, and ceramics Metal inorganic filler and so on. The inorganic filler can be selected according to the required function.

The inorganic filler preferably has an organic group on the surface. By modifying the surface of the inorganic filler with an organic group, it is easy to suppress the dispersibility in an organic solvent and the shrinkage of the adhesive layer 3 when preparing the varnish used to form the adhesive layer 3, improve the coefficient of elasticity, and improve the peelability.

The inorganic filler having an organic group on the surface can be obtained, for example, by mixing a silane coupling agent represented by the following formula (B-1) with an inorganic filler and stirring the mixture at a temperature of 30 ° C or higher. The surface modification of the inorganic filler with an organic group can be confirmed by UV measurement, infrared radiation (IR) measurement, X-ray photoelectron spectroscopy (XPS) measurement, and the like.

[Chemical 1]

In the formula (B-1), X represents a member selected from the group consisting of a phenyl group, a glycidyloxy group, an acrylfluorenyl group, a methacrylfluorenyl group, a mercapto group, an amino group, a vinyl group, an isocyanate group, and a methacryloxy group. In the organic group in the group, s represents an integer of 0 or 1 to 10, and R ¹¹ , R ^12, and R ¹³ each independently represent an alkyl group having 1 to 10 carbon atoms. Examples of the alkyl group having 1 to 10 carbon atoms include methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, isopropyl, and isobutyl. . From the viewpoint of easy availability, the alkyl group having 1 to 10 carbon atoms is preferably a methyl group, an ethyl group, and an pentyl group. From the viewpoint of heat resistance, X is preferably an amine group, a glycidyloxy group, a mercapto group, and an isocyanate group, and more preferably a glycidyloxy group and a mercapto group. From the viewpoint of suppressing the fluidity of the film during high heat and improving the heat resistance, s in the formula (B-1) is preferably 0 to 5, and more preferably 0 to 4.

Examples of the silane coupling agent include trimethoxyphenylsilane, dimethyldimethoxyphenylsilane, triethoxyphenylsilane, dimethoxymethylphenylsilane, and vinyltrimethoxysilane , Vinyltriethoxysilane, vinyltri (2-methoxyethoxy) silane, N- (2-aminoethyl) -3-aminopropylmethyldimethoxysilane, N -(2-aminoethyl) -3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3-glycidyloxy Propyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-isocyanatepropyltriethyl Oxysilane, 3-methacryloxypropyltrimethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, N- (1,3-dimethyl Butylene) -3- (triethoxysilyl) -1-propylamine, N, N'-bis (3- (trimethoxysilyl) propyl) ethylenediamine, polyoxyethylenepropyltriane Oxysilane, polyethoxydimethylsiloxane, etc. Among these, 3-aminopropyltriethoxysilane, 3-glycidyloxypropyltrimethoxysilane, 3-isocyanatepropyltriethoxysilane, and 3-mercaptopropyl are preferred. The trimethoxysilane is more preferably trimethoxyphenylsilane, 3-glycidyloxypropyltrimethoxysilane, and 3-mercaptopropyltrimethoxysilane. The silane coupling agent may be used singly or in combination of two or more kinds.

The content of the coupling agent is preferably from 0.01 to 50 parts by mass, more preferably from 0.05 to 20 parts by mass, with respect to 100 parts by mass of the inorganic filler, from the viewpoint of achieving a balance between heat resistance and storage stability. From the viewpoint of improving the heat resistance, the mass parts are more preferably 0.5 parts by mass to 10 parts by mass.

The content of the inorganic filler in the adhesive layer 3 is preferably 330 parts by mass or less, more preferably 180 parts by mass or less, and even more preferably 100 parts by mass or less with respect to 100 parts by mass of the thermoplastic resin. The lower limit of the content of the inorganic filler is not particularly limited, but is preferably 1 part by mass or more, more preferably 5 parts by mass or more, and still more preferably 8 parts by mass or more with respect to 100 parts by mass of the thermoplastic resin. By setting the content of the inorganic filler to the above range, it is easy to suppress the shrinkage of the adhesive layer 3, increase the coefficient of elasticity, and improve the peelability.

(Organic filler) An organic filler may be provided in the adhesive layer 3. Examples of the organic filler include carbon, rubber-based fillers, silicone-based fine particles, polyamidofine particles, polyamidofine particles, and the like. The content of the organic filler relative to 100 parts by mass of the thermoplastic resin is preferably 300 parts by mass or less, more preferably 200 parts by mass or less, and even more preferably 100 parts by mass or less. The lower limit of the content of the organic filler is not particularly limited, but is preferably 5 parts by mass or more with respect to 100 parts by mass of the thermoplastic resin.

(Organic Solvent) Next, if necessary, the layer 3 may be diluted with an organic solvent. The organic solvent is not particularly limited, and can be determined from the boiling point in consideration of volatility and the like during film formation. Specifically, methanol, ethanol, 2-methoxyethanol, 2-ethoxyethanol, 2-butoxyethanol, and methylethyl are preferred from the viewpoint that it is difficult to harden the film during film formation. Relatively low-boiling solvents such as ketones, acetone, methyl isobutyl ketone, toluene, and xylene. In addition, for the purpose of improving film forming properties, it is preferable to use a solvent having a relatively high boiling point, such as dimethylacetamide, dimethylformamide, N-methylpyrrolidone, or cyclohexanone. These solvents may be used singly or in combination of two or more kinds.

[Adhesive Layer] The adhesive layer 2 is preferably one having adhesive force at room temperature and having close contact with the adhesive layer 3. The adhesive layer 2 may be a UV type (hardened by high energy rays such as ultraviolet rays or radiation) or a non-UV type (eg, hardened by heat).

When a UV-type adhesive is used, it is preferable that the adhesive for forming the adhesive layer 2 contains an acrylic copolymer, a crosslinking agent, and a photopolymerization initiator. In the case of using a non-UV-type adhesive, in order to adjust the adhesive force, it is preferred that the matrix resin has a cross-linking agent that reacts with a functional group of the matrix resin through a cross-linking reaction. At least one functional group among aziridinyl and melanin. These crosslinking agents may be used alone or in combination of two or more. Examples of the matrix resin include acrylic resins, various synthetic rubbers, natural rubbers, and polyimide resins. From the viewpoint that it is difficult for the adhesive to produce a residue, the matrix resin preferably has a functional group capable of reacting with other additives, such as a hydroxyl group and a carboxyl group. When the reaction rate is slow, a catalyst such as amine or tin can be suitably used. In order to adjust the adhesive properties, it is also possible to appropriately contain an arbitrary component such as a tackifier such as a rosin-based resin, a terpene resin-based resin, and various surfactants to the extent that the effect of the present invention is not affected.

The thickness of the adhesive layer 2 is preferably 1 μm to 100 μm, more preferably 2 μm to 50 μm, and even more preferably 5 μm to 40 μm. If the thickness of the adhesive layer 2 is thinner than 1 μm, it may be difficult to ensure sufficient adhesion to the adhesive layer and it may be difficult to process. On the other hand, if it is thicker than 100 μm, it is uneconomical and has no characteristic advantage. .

[Base material layer] As the base material layer 1, a known polymer sheet or tape can be used. Specific examples include crystalline polypropylene, amorphous polypropylene, high density polyethylene, medium density polyethylene, low density polyethylene, ultra low density polyethylene, low density linear polyethylene, and polybutene. Polyolefins such as polymethylpentene, ethylene-vinyl acetate copolymers, ionic polymer resins, ethylene- (meth) acrylic copolymers, ethylene- (meth) acrylate (random, alternating) copolymers, Polyesters such as ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, Polyether ether ketone, polyimide, polyetherimide, polyimide, fully aromatic polyimide, polyphenylene sulfide, aromatic amidim (paper), glass, glass cloth, Fluoro resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin. Mixtures of these plasticizers, silicon dioxide, anti-blocking materials, slip agents, antistatic agents, etc. can also be used.

Among the above, it is preferably selected from polypropylene, polyethylene-polypropylene random copolymer, polyethylene-polypropylene block copolymer, ethylene-vinyl acetate copolymer, ionic polymer resin, ethylene- (methyl ) At least one layer of the acrylic copolymer is mainly in contact with the adhesive layer. These resins are also better in terms of Young's coefficient, stress relaxation, melting point and other characteristics, as well as in terms of price and recycling of waste materials after use. They are also better in terms of easily obtaining the surface modification effect using ultraviolet rays. good.

The base material layer 1 may be a single layer, and may have a multilayer structure formed by laminating layers including different materials, if necessary. As a method for manufacturing such a base material, a base material layer having different layers can be produced at one time by a multilayer extrusion method, or can be obtained by a method that uses an inflation method, The tape produced by the single-layer extrusion method is bonded using an adhesive, or bonded by thermal fusion. In addition, in order to control the adhesion with the adhesive layer 2, a surface roughening treatment such as a matting treatment or a corona treatment may be performed on the base material layer 1 as necessary.

<Method for Manufacturing Semiconductor Processing Tape> The semiconductor processing tape 10 can be manufactured by a method described below, for example. That is, first, the release film is coated by a blade coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, or a curtain coating method. The raw resin composition is dissolved in a solvent such as an organic solvent and varnished, and the solvent is removed to form the adhesive layer 3. Thereafter, a laminated body including a base material layer 1 and an adhesive layer 2 separately prepared is laminated at a normal temperature to 60 ° C. Thereby, the semiconductor processing tape 10 in which the adhesive layer 2 and the subsequent layer 3 are sequentially laminated on the base material layer 1 can be obtained.

<Application of Semiconductor Processing Tape> The semiconductor processing tape 10 can be used, for example, as a die-cut die-bond tape, or as a tape for temporarily fixing a substrate and a wafer. Each application will be described below.

[Cut Crystal Sticky Tape] FIGS. 2 (a) to 2 (f) and FIG. 3 are cross-sectional views illustrating an embodiment of a method for manufacturing a semiconductor device (semiconductor package) using the semiconductor processing tape 10. The method for manufacturing a semiconductor device according to this embodiment includes a step of attaching a bonding layer 3 of a semiconductor processing tape 10 to a semiconductor wafer (wafer lamination step), and performing a process on the semiconductor wafer W and the bonding layer 3. A singulation step, an ultraviolet irradiation step for irradiating the adhesive layer 2 with ultraviolet rays, a pickup step for picking up the semiconductor element 50 attached to the adhesive layer 3 from the substrate layer 1, and bonding the semiconductor element 50 to the semiconductor element via the adhesive layer 3 Next steps on the supporting substrate 60 for mounting. Hereinafter, each step will be described with reference to the drawings.

(Attachment Step) First, the semiconductor processing tape 10 is placed on a predetermined device. Then, as shown in FIGS. 2 (a) and 2 (b), the semiconductor processing tape 10 is attached to the semiconductor wafer W such that the layer 3 is in contact with one surface Ws of the semiconductor wafer W. The circuit surface Wc of the semiconductor wafer W is preferably a surface opposite to the surface Ws.

(Cutting Step) Next, as shown in FIG. 2 (c), the semiconductor wafer W, the adhesive layer 2, and the bonding layer 3 are diced. In this case, the base material layer 1 may be cut in the middle. In this way, the semiconductor processing tape 10 can also function as a dicing sheet.

(Ultraviolet irradiation step) Next, as shown in FIG. 2 (d), when the adhesive layer 2 is of a UV type, the adhesive layer 2 is irradiated with ultraviolet rays to harden the adhesive layer 2, so that the adhesive layer 2 and the adhesive layer Adhesion between 3 is reduced. The wavelength of the ultraviolet rays to be irradiated is preferably 200 nm to 400 nm, and the irradiation conditions are preferably performed at a light intensity of 30 mW / cm ² to 240 mW / cm ² with an irradiation amount of 200 mJ to 500 mJ. Irradiation.

(Pick-up step) After the ultraviolet rays are irradiated, as shown in FIG. 2 (e), the base material layer 1 is expanded, whereby the semiconductor elements 50 obtained by cutting are separated from each other, and a suction clip is used. The head 44 sucks and picks up the semiconductor element 50 with a bonding layer which is pushed up by the ejector 42 from the bonding layer 3 side. The semiconductor element 50 with an adhesive layer includes a semiconductor element Wa and an adhesive layer 3a. In addition, the semiconductor element Wa is obtained by dividing the semiconductor wafer W, and the adhesion layer 3 a is obtained by dividing the adhesion layer 3. In the picking step, the expansion may not necessarily be performed, but by performing the expansion, the picking property can be further improved.

In addition, the ejection amount of the ejector pin 42 can be selected as required. Furthermore, from the viewpoint of ensuring sufficient pick-up property even for extremely thin wafers, for example, a two-stage or three-stage pick-up method may be performed. The semiconductor element 50 may be picked up by a method other than the suction chuck 44.

(Next step) After picking up the semiconductor element 50 with a tape bonding layer, as shown in FIG. 2 (f), the semiconductor element 50 with a tape bonding layer is bonded to the support for mounting the semiconductor element by thermocompression bonding through the bonding layer 3a. On the substrate 60. After the semiconductor element 50 with a bonding layer is mounted on the support substrate 60 via the bonding layer 3a, the semiconductor element 50 with a bonding layer may be bonded to the semiconductor element Wa again by thermocompression bonding and via the bonding layer 3a. Thereby, a plurality of semiconductor elements Wa can be mounted on the support substrate 60 more reliably.

Next, as shown in FIG. 3, it is preferable to electrically connect the semiconductor element Wa and the support substrate 60 with a wire bonding wire 70 as necessary. At this time, the semiconductor element Wa, the adhesive layer 3a, and the support substrate 60 are heated at 170 ° C. for about 15 minutes to 60 minutes, for example. Furthermore, after connection by wire bonding, the semiconductor element Wa may be resin-sealed if necessary. The resin sealing material 80 may be formed on the surface 60a of the support substrate 60. On the other hand, a solder ball 90 may be formed on the surface of the support substrate 60 opposite to the surface 60a as an external substrate (mother board )) Electrical connection use.

When the resin is sealed, the adhesive layer 3a is preferably in a semi-hardened state. Thereby, during the resin sealing, the adhesive layer 3 a can be more satisfactorily filled into the concave-convex recessed portions formed on the surface 60 a of the support substrate 60. The semi-hardened state refers to a state where the adhesive layer 3a is not completely hardened. The adhesive layer 3a in a semi-hardened state can be finally heat-hardened by one or more heat treatments in the manufacturing process of the semiconductor device.

By going through the above steps, the semiconductor device 100 can be manufactured using the semiconductor processing tape 10.

[Temporary Fixing Tape] The semiconductor processing tape 10 can be used to temporarily fix the substrate S to one of the surfaces of the bonding layer 3 during the manufacturing process of the semiconductor device, and can also be used to fix the substrate layer 1 and the adhesive layer 2 After peeling, the semiconductor wafer W is temporarily fixed to the other surface of the bonding layer 3.

FIGS. 4 (a) to 4 (f) are cross-sectional views showing steps for manufacturing a semiconductor device using the semiconductor processing tape 10 as a temporary fixing tape. When the semiconductor processing tape 10 is used as a temporary fixing tape, none of the base material layer 1, the adhesive layer 2, and the adhesive layer 3 remain on the semiconductor device to be finally manufactured (see FIG. 4 (f)).

As shown in FIG. 4A, the semiconductor processing tape 10 is attached to the substrate S such that the adhesive layer 3 is in contact with the surface of the substrate S. The temperature at this time may be set to about 50 ° C to 90 ° C. By bonding the substrate S and the semiconductor processing tape 10 under this temperature condition, the adhesive force between the adhesive layer 3 and the substrate S can be set to a state higher than the adhesive force between the adhesive layer 3 and the adhesive layer 2. That is, the substrate S is used to control the adhesiveness of the adhesive layer 3 in a state where the adhesive layer 3 is bonded. The adhesive layer 3 in a state of being bonded to the substrate S is a layer having a predetermined heat resistance while controlling adhesiveness by applying heat.

The substrate layer 1 and the adhesive layer 2 are peeled from the state shown in FIG. 4 (a), thereby obtaining a laminated body 20 including the substrate S and the adhesive layer 3 as shown in FIG. 4 (b). Then, the semiconductor wafer W is attached to the adhesion layer 3 so that the surface Ws of the semiconductor wafer W is in contact with the adhesion layer 3. The surface on the opposite side of the surface Ws of the semiconductor wafer W is the circuit surface Wc. Thereby, as shown in FIG. 4 (c), a substrate S can be bonded on one surface F1 of the bonding layer 3, and a semiconductor wafer W can be bonded on the other surface F2 of the bonding layer 3.的 层 体 30。 The laminated body 30. The temperature at the time of bonding the adhesive layer 3 to the semiconductor wafer W may be about 50 ° C to 90 ° C. By bonding the bonding layer 3 and the semiconductor wafer W under this temperature condition, the bonding force between the bonding layer 3 and the semiconductor wafer W can be set to a state greater than the bonding force between the bonding layer 3 and the substrate S. .

After necessary processing (for example, dicing) is applied to the semiconductor wafer W in the multilayer body 30 shown in FIG. 4 (c), the substrate S is peeled off by picking up. Thereby, a laminated body 40 including the adhesive layer 3 a and the semiconductor element Wa as shown in FIG. 4 (d) can be obtained. Next, the semiconductor element Wa is mounted on the support substrate 60 with the circuit surface Wc of the semiconductor element Wa facing the support substrate 60 (see FIG. 4 (e)). An adhesive (not shown) may be interposed between the semiconductor element Wa and the support substrate 60. Thereafter, the adhesive layer 3a is peeled off (see FIG. 4 (f)). From the state shown in FIG. 4 (f), if necessary, the semiconductor element Wa is electrically connected to the support substrate 60 by a bonding wire, for example, thereby manufacturing a semiconductor device. [Example]

The present invention will be described based on examples. The present invention is not limited to the following examples.

(Production of Adhesive Film) As the adhesive, the following main monomers and functional monomers were used, and an acrylic copolymer was obtained by a solution polymerization method. That is, as the main monomer, 2-ethylhexyl acrylate and methyl methacrylate are used, and as the functional group monomer, hydroxyethyl acrylate and acrylate are used. The weight average molecular weight of the acrylic copolymer was 400,000, and the glass transition point was -38 ° C. An adhesive solution prepared by mixing 10 parts by mass of a polyfunctional isocyanate cross-linking agent (manufactured by Mitsubishi Chemical Co., Ltd. with the trade name MITEC NY730A-T) to 100 parts by mass of the acrylic copolymer was prepared. An adhesive solution was applied on the surface release-treated polyethylene terephthalate (thickness: 25 μm) so that the thickness of the adhesive when dried was 10 μm, and dried. Furthermore, a polyolefin substrate (thickness: 100 μm) containing polypropylene / vinyl acetate / polypropylene was laminated on the adhesive surface. Thereby, an adhesive film including an adhesive layer and a polyolefin substrate (base material layer) was obtained. The adhesive film was left at room temperature for 2 weeks, and was sufficiently aged.

<Example 1> (Preparation of Adhesive Varnish) The following materials were mixed and vacuum degassed to obtain an adhesive varnish. · Thermoplastic resin: 100 parts by mass of HTR-860P-3 (trade name, manufactured by Nagase chemtex (strand), glycidyl-containing acrylic rubber, molecular weight 1 million, Tg-7 ° C) · Thermosetting composition: YDCN-700-10 (trade name, manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd., o-cresol novolac epoxy resin, epoxy equivalent 210) 20 parts by mass · Heat-curing composition: Milex 80 g -LL (trade name, manufactured by Mitsui Chemicals Co., Ltd., phenol aralkyl resin) 17 parts by mass · Hardening accelerator: 2PZ-CN (trade name, manufactured by Shikoku Chemical Industries, Ltd., imidazole compound) 0.04 part by mass · Inorganic filler: 12 parts by mass of Aerosil R972 (trade name, manufactured by Japan Aerosil (stock), silicon oxide) · Silane coupling agent: A-189 (trade name, Unica Japan (Manufactured by Nippon Unicar), 0.6 parts by mass of γ-mercaptopropyltrimethoxysilane; silane coupling agent: A-1170 (trade name, manufactured by Japan Nippon Unicar), γ-urea Propyltriethoxysilane) 1.7 parts by mass

(Production of Semiconductor Processing Tape) The adhesive varnish was applied to a 75 μm-thick surface release-treated polyethylene terephthalate (manufactured by Teijin DuPont Film (Teijin DuPont Film), Teijin Teto Teijin tetoron film: A-31). Thereby, an adhesive sheet having an adhesive layer formed on one surface of the resin film was obtained. The adhesive sheet was bonded to the adhesive film to obtain a tape for semiconductor processing. In addition, the adhesive sheet and the adhesive film are laminated so that the adhesive layer of the adhesive sheet and the adhesive layer of the adhesive film are directly in contact with each other. The adhesive layer is adhered to the adhesive layer, whereby the adhesive layer formed on the polyethylene terephthalate can be reliably inverted to the adhesive layer side.

(Example 2) A semiconductor processing tape was obtained in the same manner as in Example 1 except that the materials used in the preparation of the adhesive varnish were prepared as shown in Example 2 of Table 1.

(Comparative Example 1) A semiconductor processing tape was obtained in the same manner as in Example 1 except that the materials used in the preparation of the adhesive varnish were the formulations shown in Comparative Example 1 in Table 1. In addition, "EXA-830CRP" in Table 1 is a trade name of the thermosetting resin (bisphenol F-type epoxy resin, epoxy equivalent 170) manufactured by Dickson (DIC).

(Comparative Example 2) A semiconductor processing tape was obtained in the same manner as in Example 1 except that each material used in the preparation of the adhesive varnish was a formulation shown in Comparative Example 2 of Table 1. In addition, "LF-4871" in Table 1 is a trade name of a thermosetting resin (bisphenol F-type epoxy resin, epoxy equivalent 118) manufactured by DIC Corporation, and "YDF-8170C" The trade name of the thermosetting resin (bisphenol F-type epoxy resin, epoxy equivalent 157) manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., and "SC-2050-HLG" is Admatechs (shares ) Trade name of the manufactured filler.

(Comparative Example 3) A semiconductor processing tape was obtained in the same manner as in Example 1 except that each material used in the preparation of the adhesive varnish was a formulation shown in Comparative Example 3 in Table 1.

(Comparative Example 4) A semiconductor processing tape was obtained in the same manner as in Example 1 except that the materials used in the preparation of the adhesive varnish were the formulations shown in Comparative Example 4 in Table 1.

The semiconductor processing tapes of the examples and comparative examples were evaluated by the following methods. (1) Shrinkage of Adhesive Layer The semiconductor processing tapes of Examples and Comparative Examples were cut to a size of 100 mm × 100 mm, respectively. The adhesive film (adhesive layer and base material layer) and the surface release-treated polyethylene terephthalate were peeled from each sample, and it was set as the adhesion-only layer, and it was set as the sample for a measurement. The measurement samples of Examples and Comparative Examples were heated at 130 ° C. for 1 hour and hardened. The size of the sample after the hardening treatment was measured, and the shrinkage was calculated using the following formula. In Table 1, a sample having a shrinkage value of less than 2% is referred to as "A", and a sample having a value of 2% or more is referred to as "B". Shrinkage (%) = (sample area after hardening) / (sample area before hardening) × 100

(2) Coefficient of Thermoelasticity of the Adhesive Layer After the Hardening Treatment The hardened sample used in the evaluation of the shrinkage was cut to a size of 4 mm × 30 mm as a measurement sample. This sample was subjected to a tensile load using a dynamic viscoelasticity measuring device DVE-V4 (trade name, manufactured by rheology (stock)), and was subjected to a condition of a frequency of 10 Hz and a heating rate of 10 ° C / min. Measurements are performed at -50 ° C to 300 ° C. The coefficient of elasticity at a temperature of 100 ° C was set as the coefficient of thermal elasticity. In Table 1, a sample having a value of the coefficient of thermal elasticity of less than 5 MPa is referred to as "A", and a sample having a value of 5 MPa or more is referred to as "B".

(3) Peeling force of 90 ° peeling of the adhesive layer with respect to the wafer (evaluation of adhesion with respect to the wafer) The cured sample used for the evaluation of the shrinkage was cut with a width of 10 mm. The obtained sample was used as a measurement sample. The measurement sample is attached to the surface of a silicon wafer. After that, an adhesive tape (auxiliary tape) was attached to the measurement sample, and the measurement sample was peeled off from the wafer at an angle of 50 mm / min and 90 °. In Table 1, a sample having a peeling force value at 90 ° of 15 N / m or more is referred to as "A", and a sample having a value of less than 15 N / m is referred to as "B".

(4) The surface roughness of the adhesive layer after peeling was evaluated using a laser microscope (manufactured by Keyence Co., Ltd.) on the "adhesion of the adhesive layer to the wafer" (after peeling). Then, the surface roughness (Tp) of the layer was measured. In Table 1, a sample having a surface roughness (Tp30 value of 30 or less) is referred to as "A", and a sample having a value greater than 30 is referred to as "B".

[Table 1] [Industrial availability]

According to the present invention, there is provided a semiconductor processing tape having excellent versatility in a semiconductor manufacturing process.

1‧‧‧ substrate layer

2‧‧‧ Adhesive layer

3, 3a‧‧‧ Adjacent layer

10‧‧‧Semiconductor Processing Tape

20, 30, 40 ‧ ‧ ‧ laminated bodies

42‧‧‧ thimble

44‧‧‧ Suction Chuck

50, Wa‧‧‧Semiconductor element

60‧‧‧Support substrate

60a‧‧‧ surface of supporting substrate

70‧‧‧Wire bonding wire

80‧‧‧resin sealing material

90‧‧‧ solder ball

100‧‧‧ semiconductor device

F1‧‧‧ Adhere to one of the layers

F2‧‧‧ continues on the other side of the layer

S‧‧‧ substrate

W‧‧‧Semiconductor wafer

Wc‧‧‧Circuit Surface

Ws‧‧‧ noodles

FIG. 1 is a cross-sectional view schematically showing an embodiment of a semiconductor processing tape according to the present invention. FIGS. 2 (a) to 2 (f) are cross-sectional views schematically showing a step of manufacturing a semiconductor device using the semiconductor processing tape shown in FIG. 1 as a die-cut die-bonding tape. 3 is a cross-sectional view schematically showing an example of a semiconductor device manufactured using the semiconductor processing tape shown in FIG. 1. FIGS. 4 (a) to 4 (f) are cross-sectional views schematically showing steps for manufacturing a semiconductor device using the semiconductor processing tape shown in FIG. 1 as a temporary fixing tape.

Claims (7)

A semiconductor processing tape is a semiconductor processing tape having a substrate layer, an adhesive layer, and a thermosetting adhesive layer laminated in this order. The adhesive layer is cured at 130 ° C for 1 hour. The shrinkage ratio is less than 2%, and the thermoelastic coefficient of the adhesive layer is less than 5 MPa. The semiconductor processing tape according to item 1 of the scope of patent application, wherein after the hardening treatment is performed at 130 ° C. for one hour, the peeling and peeling force of the adhesive layer with respect to the wafer is 15 N / m or more. The semiconductor processing tape according to item 1 or 2 of the scope of patent application, which is used for temporarily fixing a substrate to one surface of the bonding layer during the manufacturing process of a semiconductor device, and is used for peeling After the substrate layer and the adhesive layer, a wafer is temporarily fixed on the other surface of the adhesive layer. The semiconductor processing tape according to any one of claims 1 to 3, wherein the base material layer, the adhesive layer, and the adhesive layer are not left on the semiconductor device to be finally manufactured. . The semiconductor processing tape according to any one of claims 1 to 4, wherein the adhesive layer includes a thermoplastic resin, a thermosetting resin, a hardening accelerator, and a filler, and the adhesive layer is When content of the said thermoplastic resin is 100 mass parts, content of the said thermosetting resin in the said adhesive layer is 1 mass part-40 mass parts. The semiconductor processing tape according to item 5 of the scope of patent application, wherein when the content of the thermoplastic resin in the adhesive layer is 100 parts by mass, the content of the filler in the adhesive layer is 1 Mass parts to 330 mass parts. The semiconductor processing tape according to any one of claims 1 to 6, wherein the adhesive layer is formed of a non-ultraviolet type adhesive.