TW201405869A - Light emitting device - Google Patents
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Description
本發明係一種發光元件，尤指一種具有多方向出光特性之發光元件。
The invention is a light-emitting element, in particular a light-emitting element having multi-directional light-emitting characteristics.
發光二極體（Light Emitting Diode，LED）是一種半導體材料製成的固態發光元件，具有小尺寸、低功耗和高可靠性的特點。其係使用磷化鎵、砷化鎵等III-V族化學元素之組合，透過將此化合物半導體施加電壓，使電洞和電子在不同的電極電壓作用下相遇而產生複合，此時電子會跌落到較低的能階，同時以光子的模式釋放，讓電能轉換為光能，達成發光的效果。
而此種照明的技術，其背後的推動乃是由於煤炭、天然氣、石油等非再生資源逐漸匱乏，特別是國際間石油價格並不穩定，因此在開發新能源的同時，也一併需要開發節能產品以減緩消耗剩餘石化燃料的速度。而在此些自然條件的壓力之下，於全球皆積極地投入節能產品開發的關鍵時刻，被喻為綠色光源的發光二極體即符合此一節能趨勢，不但技術日益成熟進步，其應用領域也更為廣泛。目前，發光二極體已普遍應用於3C產品指示器與顯示裝置之上；而再隨著發光二極體生產良率的提高，單位製造成本也跟著大幅降低，促使各領域皆考慮採用發光二極體為照明材料。
承前所述，由於此刻開發高亮度的發光二極體已成為各國廠商的研發重點，故如何將發光二極體的成本做進一步的降低，係為攸關發光二極體能否進一步普及應用於生活之重點。然而發光二極體本身是一種指向性的光源，並非如傳統燈泡為一種發散性的光源，也因此難以有效地應用在一般室內外照明的燈具上提供所需要的光型。
以發光二極體的結構而言，其於製備發光二極體晶片後，將會進行封裝製程。封裝的功能在於提供發光二極體晶片電能輸入、光能輸出或是散熱上的必要支援。例如半導體元件長時間暴露在大氣中，會受到水氣或其他環境中的化學物質影響而老化，造成特性的衰退。而在所謂的封裝製程中，現今的技術大致可區分為固晶（die bonding）、打線（wire bonding）以及灌膠（encapsulation）等三個程序。
在過去技術中，早期於固晶程序大多以銀膠把發光二極體晶片鍵結在基材上，但銀膠的散熱性及鍵結強度已無法應付高功率發光二極體的需求，因此後期朝向使用金屬的軟銲材料做為發光二極體晶片的鍵結，但因為有助銲劑而引發的後續清洗問題。至於打線，則是利用熱壓合、超音波楔合或以超音波輔助的熱壓合方式，把金線或鋁線的兩端分別連結到晶片及導線架或基板上。
然而，雖然固晶、打線等程序已於此領域中被開發得相當成熟，但仍然是發光二極體製程上的一道巨大成本，且每一程序本身都有良率的問題；因此，若能針對此點進行改良和簡化，則發光二極體的普及將會有更好的前景。
Light Emitting Diode (LED) is a solid-state light-emitting component made of a semiconductor material with small size, low power consumption and high reliability. It uses a combination of III-V chemical elements such as gallium phosphide or gallium arsenide to apply a voltage to the compound semiconductor to cause the holes and electrons to meet under different electrode voltages, and the electrons will fall. To the lower energy level, while releasing in the photon mode, the electric energy is converted into light energy to achieve the luminous effect.
The driving force behind this kind of lighting technology is that the non-renewable resources such as coal, natural gas and petroleum are gradually lacking, especially the international oil price is not stable. Therefore, while developing new energy, it is also necessary to develop energy conservation. Products to slow down the consumption of surplus fossil fuels. Under the pressure of these natural conditions, the world is actively investing in the key moments of energy-saving product development. The light-emitting diodes, which are referred to as green light sources, meet this energy-saving trend, and the technology is becoming more mature and progressive, and its application fields. It is also more extensive. At present, the light-emitting diode has been widely applied to the 3C product indicator and display device; and with the improvement of the production yield of the light-emitting diode, the unit manufacturing cost has also been greatly reduced, prompting the use of the light-emitting two in various fields. The polar body is a lighting material.
As mentioned above, since the development of high-brightness LEDs has become the focus of research and development of manufacturers in various countries, how to reduce the cost of LEDs further, can it be further popularized in Shaoguan LEDs? The focus. However, the light-emitting diode itself is a directional light source, and is not a divergent light source as in the conventional light bulb, and thus it is difficult to effectively apply the light pattern required for general indoor and outdoor lighting fixtures.
In terms of the structure of the light-emitting diode, after the light-emitting diode wafer is prepared, a packaging process will be performed. The function of the package is to provide the necessary support for the power input, light energy output or heat dissipation of the LED chip. For example, semiconductor components are exposed to the atmosphere for a long time, and are aged by chemicals in water vapor or other environments, causing degradation of characteristics. In the so-called packaging process, the current technology can be roughly divided into three processes: die bonding, wire bonding, and encapsulation.
In the past technology, most of the early die-bonding procedures used silver paste to bond the light-emitting diode wafer to the substrate, but the heat dissipation and bonding strength of the silver paste could not cope with the demand of the high-power light-emitting diode. Later, the metal-based solder material was used as the bond of the light-emitting diode wafer, but the subsequent cleaning problem caused by the flux was caused. As for the wire bonding, the two ends of the gold wire or the aluminum wire are respectively joined to the wafer and the lead frame or the substrate by thermocompression bonding, ultrasonic wave wedge bonding or ultrasonic-assisted thermocompression bonding.
However, although the procedures of solid crystal and wire bonding have been developed quite mature in this field, they are still a huge cost in the process of light-emitting diodes, and each process itself has a yield problem; therefore, if To improve and simplify this point, the popularity of LEDs will have better prospects.
本發明之主要目的，係提供一種具有多方向出光特性之發光元件，其係讓發光二極體晶片的磊晶層被兩個透明電極上下同時覆蓋，使磊晶層發出的光可穿透該些透明電極，向空間中多個方位行進而不受阻礙，擴大了發光元件的照光角度。
本發明之次要目的，係提供一種具有多方向出光特性之發光元件，其發光二極體晶片的電極係直接與基板上的金屬電極相連接，使之可直接被外部電源供電，同時本發明在製程上相當簡單，省去了固晶以及打線接合的步驟，不但可以提高良率，也可降低成本，具有實際的經濟效益。
為了達到上述之目的，本發明揭示了一種具有大發光角度特性之發光元件，其在結構上係包含：一基板；一金屬電極區，設置於該基板之上，係包含分離之一第一金屬電極以及一第二金屬電極；以及一發光二極體晶片，其具有一磊晶層，該磊晶層之上下部分別具有一第一電極以及一第二電極，該發光二極體晶片透過該第一電極以及該第二電極而分別與該第一金屬電極以及該第二金屬電極電性耦接而流通供電於該磊晶層，並以該磊晶層的側部方向設置於該基板，而使發光二極體晶片矗立於基板上。透過此種結構組合，即可達到本發明所欲達到的多方向出光和高製備良率表現。
The main object of the present invention is to provide a light-emitting element having multi-directional light-emitting characteristics, wherein the epitaxial layer of the light-emitting diode wafer is covered by two transparent electrodes simultaneously, so that the light emitted by the epitaxial layer can penetrate the light. The transparent electrodes travel in a plurality of directions in the space without being hindered, thereby expanding the illumination angle of the light-emitting elements.
A secondary object of the present invention is to provide a light-emitting element having multi-directional light-emitting characteristics, wherein an electrode of a light-emitting diode wafer is directly connected to a metal electrode on a substrate so that it can be directly supplied by an external power source, and the present invention It is quite simple in the process, eliminating the steps of solid crystal and wire bonding, which not only improves the yield, but also reduces the cost and has practical economic benefits.
In order to achieve the above object, the present invention discloses a light-emitting element having a large illuminating angle characteristic, which structurally comprises: a substrate; a metal electrode region disposed on the substrate, comprising a first metal separated An electrode and a second metal electrode; and a light-emitting diode chip having an epitaxial layer, wherein the upper and lower portions of the epitaxial layer respectively have a first electrode and a second electrode, and the light-emitting diode chip transmits the light-emitting diode The first electrode and the second electrode are electrically coupled to the first metal electrode and the second metal electrode respectively to supply power to the epitaxial layer, and are disposed on the substrate in a side direction of the epitaxial layer. The light emitting diode chip is placed on the substrate. Through such a combination of structures, the multi-directional light output and high preparation yield performance desired by the present invention can be achieved.
本發明之特徵及所達成之功效以較佳之實施例及配合詳細之說明，說明如後：
由於過往發光二極體晶片必須經由固晶以及打線的程序以完成封裝，當中存在著良率、材料、加工等生產成本，故本發明亦針對該些程序，設計此一具有多方向出光特性之發光元件，並免去該些程序，降低成本。
首先，請參考第一圖，本發明的主要結構包含了一基板1；一金屬電極區2；一發光二極體晶片3；一第一電極31；一第二電極32以及一磊晶層33。
於此圖的實施例中，金屬電極區2是設置於基板1之上，可區分為第一金屬電極21以及第二金屬電極22，以避免有短路發生；發光二極體晶片3是由第一電極31以及第二電極32分別設置於磊晶層33的上部91、下部92所組成，而此第一電極31的側邊和第二電極32的側邊還分別與第一金屬電極21以及第二金屬電極22有直接接觸而使發光二極體3與基板1相連接。
此基板1為導熱基板，可為材質選用上可包含陶瓷基板、碳化矽基板、陽極化鋁基板或氮化鋁基板等，具有承載及導熱的功能，並不限定是否為導體。基板1與金屬電極區2之間可進一步包含有一絕緣散熱層11，其功能在於防止金屬電極區2發生漏電或是短路。
除上述結構之外，可參考第二圖，此為發光二極體晶片3的結構示意，該磊晶層33包含有一第一半導體層331、一第二半導體層332以及一發光層333，其中發光層333是設置於第一半導體層331與第二半導體層332之間。此為一般發光二極體磊晶結構中的通常組成。一第一半導體層331以及一第二半導體層332的材質分別為N型以及P型氮化鎵，位於兩者之間的發光層333係電子、電洞主要結合的發光區，可為一般無摻雜發光層或多重量子井(multiple quantum well，MQW)發光層或其他，是光能產生之處。
第一電極31和第二電極32可由透明導電層 (Transparent Conductive Layer，TCL)組成，此透明導電層可選用金屬網膜、氧化銦錫(Indium Tin Oxide，ITO)或是氧化鋅(ZnO)等材質，因其具有良好的透光效果，使發光層333產生的光朝向此第一電極31和第二電極32行進時，不會因大量反射或是吸收而衰減，而可以最大效率出光。另外，第一電極之側邊81以及第二電極之側邊82係分別為與第一圖所揭示的實施方式中，與第一金屬電極之表面83和第二金屬電極之表面84直接接觸的位置。
在此發光二極體晶片3的製作程序上，請參考第三A圖~第三D圖所揭示的順序。如第三A圖所示，係先於一藍寶石(Sapphire)基板7上磊晶，即依序於藍寶石基板7上先後成長第一半導體層331、發光層333以及第二半導體層332，以形成磊晶層33的結構。接著如第三B圖所示，透過接合(bonding)、鍍層、塗覆(coating)或摻雜的方式於磊晶層33之上部91設置第一電極31。如前所述，此第一電極31的材質是由透明導電層所組成，使發光層333所產生的光能直接全部或部分穿透。
形成第一電極31於磊晶層33之上以後，請參考第三C圖，接著是可透過雷射剝離技術(Laser Lift Off，LLO)、研磨或蝕刻技術，使藍寶石基板7與磊晶層33分離。最後，請參考第三D圖，在移除了藍寶石基板7之後，最後再於磊晶層33的下部92以與形成第一電極雷同方式形成第二電極32，完成發光二極體晶片3的結構架構。
於此發光二極體晶片3的結構上，第一電極31和第二電極32的面積是大於位於兩者之間的磊晶層33，並且基於磊晶層33是位於第一電極31和第二電極32的中間，使得當發光二極體晶片3以磊晶層側面93的方向設置於金屬電極區2之上時，僅有第一電極31和第二電極32與金屬電極區2相接觸，如此可以取代傳統封裝製程中的打線與對導電金線的需求，並能直接導入外部電源所提供的電流於發光二極體晶片3。
另外，本發明的為了提高發光二極體晶片3的散熱效果，在第一電極31和第二電極32上更可以接合(bonding)、鍍層、塗覆(coating)或摻雜等方式形成一層類鑽碳膜(Diamond Like Carbon，DLC)，因類鑽碳膜係為透明，並具有高導熱的性能，故能快速將發光二極體晶片3的熱能導出。另請參考第四A~第四D圖，此為第一電極31和第二電極32上形成類鑽碳膜4時的結構製作程序，其與第三A~第三D圖所揭示的程序基本相同，惟此時有添加類鑽碳膜4，並將此散熱結構形成於第一電極31和第二電極32之表面。
又為了讓發光二極體晶片3能夠固定於金屬電極區2之上，再請參考第一圖，兩者之間接合的部分可透過導電導熱膠6做黏合上的輔助，此導電導熱膠6的性質具有導電和導熱的功能，因此金屬電極區2除可和第一電極31以及第二電極32電性連接外，亦可將發光二極體晶片3所產生的熱能傳導出去。
請參考第五圖，於磊晶層33和第一電極31以及第二電極32之間，更設置有透明導電材料334，使得發光二極體晶片3及發光元件在降低驅動電流需求或減少暗電流等電性要求、或提高出光效率上達到更好的效果。
在一般的發光二極體製程中，除了固晶、打線之外，尚且有灌膠的程序以保護打線或是調整出光顏色。本發明之具有多方向出光特性之發光元件雖然不再需要灌膠以保護打線，但仍可透過具有螢光粉之膠體進行灌膠封裝，以達成不同的出光顏色。請參考第六圖，發光二極體晶片3可被含有能量轉換材料的能量轉換層5包覆，而變更了出光顏色。此能量轉換材料即係前述的螢光粉。
藉由本發明之具有多方向出光特性之發光元件的結構設計，發光二極體的製程能夠被大幅簡化，並且能高度維持發光二極體應有的出光效果，可同時向發光二極體晶片的前、後、左、右以及上方出光。在可同時直接排除固晶與打線上所需考量的良率、材料、加工等生產成本之下，本發明為一具高經濟價值的設計。
惟以上所述者，僅為本發明之較佳實施例而已，並非用來限定本發明實施之範圍，舉凡依本發明申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾，均應包括於本發明之申請專利範圍內。
The features of the present invention and the achievable effects are described in the preferred embodiments and in conjunction with the detailed description.
Since the conventional LED chip must be packaged through a process of die bonding and wire bonding, and there are production costs such as yield, material, processing, etc., the present invention also designs a multi-directional light-emitting characteristic for the programs. Light-emitting components, and eliminating these procedures, reducing costs.
First, referring to the first figure, the main structure of the present invention comprises a substrate 1; a metal electrode region 2; a light emitting diode chip 3; a first electrode 31; a second electrode 32; and an epitaxial layer 33. .
In the embodiment of the figure, the metal electrode region 2 is disposed on the substrate 1 and can be divided into the first metal electrode 21 and the second metal electrode 22 to avoid a short circuit; the LED body 3 is An electrode 31 and a second electrode 32 are respectively disposed on the upper portion 91 and the lower portion 92 of the epitaxial layer 33, and the sides of the first electrode 31 and the side of the second electrode 32 are respectively associated with the first metal electrode 21 and The second metal electrode 22 is in direct contact with the light-emitting diode 3 and the substrate 1.
The substrate 1 is a heat-conductive substrate, and may be made of a ceramic substrate, a tantalum carbide substrate, an anodized aluminum substrate, or an aluminum nitride substrate, and has a function of carrying and heat conduction, and is not limited to a conductor. The insulating layer 11 may be further disposed between the substrate 1 and the metal electrode region 2, and its function is to prevent leakage or short circuit of the metal electrode region 2.
In addition to the above structure, reference may be made to the second figure, which is a schematic diagram of the structure of the LED substrate 3. The epitaxial layer 33 includes a first semiconductor layer 331, a second semiconductor layer 332 and a light-emitting layer 333. The light emitting layer 333 is disposed between the first semiconductor layer 331 and the second semiconductor layer 332. This is a common composition in a general light-emitting diode epitaxial structure. The materials of a first semiconductor layer 331 and a second semiconductor layer 332 are respectively N-type and P-type gallium nitride, and the light-emitting layer 333 located between the two is a light-emitting region in which electrons and holes are mainly combined, and may be generally A doped luminescent layer or a multiple quantum well (MQW) luminescent layer or the like is where light energy is generated.
The first electrode 31 and the second electrode 32 may be composed of a transparent conductive layer (TCL). The transparent conductive layer may be made of a metal mesh film, indium tin oxide (ITO) or zinc oxide (ZnO). Because of its good light transmission effect, when the light generated by the light-emitting layer 333 is directed toward the first electrode 31 and the second electrode 32, it is not attenuated by a large amount of reflection or absorption, and the light can be emitted with maximum efficiency. In addition, the side 81 of the first electrode and the side 82 of the second electrode are respectively in direct contact with the surface 83 of the first metal electrode and the surface 84 of the second metal electrode in the embodiment disclosed in the first figure. position.
In the procedure for fabricating the LED chip 3, please refer to the sequence disclosed in the third to third D drawings. As shown in FIG. 3A, the first semiconductor layer 331, the light-emitting layer 333, and the second semiconductor layer 332 are sequentially formed on the sapphire substrate 7 to be epitaxially formed on the sapphire substrate 7. The structure of the epitaxial layer 33. Next, as shown in FIG. B, the first electrode 31 is provided on the upper portion 91 of the epitaxial layer 33 by bonding, plating, coating or doping. As described above, the material of the first electrode 31 is composed of a transparent conductive layer, so that the light energy generated by the light-emitting layer 333 is directly or completely penetrated.
After forming the first electrode 31 on the epitaxial layer 33, please refer to the third C diagram, followed by laser lift off (LLO), grinding or etching technology to make the sapphire substrate 7 and the epitaxial layer. 33 separation. Finally, referring to the third D figure, after the sapphire substrate 7 is removed, and finally, the second electrode 32 is formed in the lower portion 92 of the epitaxial layer 33 in the same manner as the first electrode is formed, and the LED body 3 is completed. Structure.
In the structure of the light-emitting diode wafer 3, the area of the first electrode 31 and the second electrode 32 is larger than the epitaxial layer 33 located therebetween, and based on the epitaxial layer 33 is located at the first electrode 31 and In the middle of the two electrodes 32, when the light-emitting diode wafer 3 is disposed on the metal electrode region 2 in the direction of the side 91 of the epitaxial layer, only the first electrode 31 and the second electrode 32 are in contact with the metal electrode region 2. This can replace the wire bonding and the need for the conductive gold wire in the conventional packaging process, and can directly introduce the current supplied from the external power source to the LED chip 3.
In addition, in order to improve the heat dissipation effect of the light-emitting diode wafer 3, the first electrode 31 and the second electrode 32 may be bonded, plated, coated or doped to form a layer. Diamond Like Carbon (DLC), because the diamond-like carbon film is transparent and has high thermal conductivity, can quickly derive the thermal energy of the LED chip 3. Please refer to the fourth A to the fourth D, which is a structure preparation procedure when the diamond-like carbon film 4 is formed on the first electrode 31 and the second electrode 32, and the program disclosed in the third to third D drawings Basically the same, except that the diamond-like carbon film 4 is added at this time, and the heat dissipation structure is formed on the surfaces of the first electrode 31 and the second electrode 32.
In order to enable the LED chip 3 to be fixed on the metal electrode region 2, please refer to the first figure, and the joint between the two parts can be assisted by the conductive and thermal conductive adhesive 6 for bonding. The nature of the metal electrode region 2 can be electrically connected to the first electrode 31 and the second electrode 32, and the thermal energy generated by the LED chip 3 can be conducted.
Referring to the fifth figure, between the epitaxial layer 33 and the first electrode 31 and the second electrode 32, a transparent conductive material 334 is further disposed, so that the light emitting diode chip 3 and the light emitting element reduce the driving current requirement or reduce the darkness. A better effect is achieved by the current isoelectricity requirement or the improvement of the light extraction efficiency.
In the general process of light-emitting diodes, in addition to solid crystal and wire bonding, there are still procedures for filling the glue to protect the wire or adjust the color of the light. The light-emitting element with multi-directional light-emitting characteristics of the present invention does not need to be filled with glue to protect the wire, but can still be encapsulated by a colloid having a phosphor powder to achieve different light-emitting colors. Referring to the sixth figure, the LED chip 3 can be covered by the energy conversion layer 5 containing the energy conversion material, and the color of the light is changed. This energy conversion material is the aforementioned phosphor powder.
According to the structural design of the light-emitting element having the multi-directional light-emitting characteristics of the present invention, the process of the light-emitting diode can be greatly simplified, and the light-emitting effect of the light-emitting diode can be maintained at a high level, and can simultaneously be applied to the light-emitting diode wafer. Front, back, left, right, and top light. The present invention is a design with high economic value under the production cost of yield, material, processing, etc., which can be directly excluded from the solid crystal and the wire.
The above is only the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and the variations, modifications, and modifications of the shapes, structures, features, and spirits described in the claims of the present invention. All should be included in the scope of the patent application of the present invention.
1．．．基板1. . . Substrate
11．．．絕緣散熱層11. . . Insulating heat sink
2．．．金屬電極區2. . . Metal electrode area
21．．．第一金屬電極twenty one. . . First metal electrode
22．．．第二金屬電極twenty two. . . Second metal electrode
3．．．發光二極體晶片3. . . Light-emitting diode chip
31．．．第一電極31. . . First electrode
32．．．第二電極32. . . Second electrode
33．．．磊晶層33. . . Epitaxial layer
331．．．第一半導體層331. . . First semiconductor layer
332．．．第二半導體層332. . . Second semiconductor layer
333．．．發光層333. . . Luminous layer
334．．．透明導電材料334. . . Transparent conductive material
4．．．類鑽碳膜4. . . Diamond-like carbon film
5．．．能量轉換層5. . . Energy conversion layer
6．．．導電導熱膠6. . . Conductive and thermal conductive adhesive
7．．．藍寶石基板7. . . Sapphire substrate
81．．．第一電極之側邊81. . . Side of the first electrode
82．．．第二電極之側邊82. . . Side of the second electrode
83．．．第一金屬電極之表面83. . . Surface of the first metal electrode
84．．．第二金屬電極之表面84. . . Surface of the second metal electrode
91．．．上部91. . . Upper
92．．．下部92. . . Lower part
93．．．側部93. . . Side
第一圖：其係為本發明之一較佳實施例之結構示意圖；
第二圖：其係為本發明之一較佳實施例之發光二極體晶片結構示意圖；
第三A~三D圖：其係為本發明之一較佳實施例之發光二極體晶片結構示意圖；
第四A~四D圖：其係為本發明之另一較佳實施例之發光二極體晶片結構示意圖；
第五圖：其係為本發明之再一較佳實施例之發光二極體晶片結構示意圖；以及
第六圖：其係為本發明之一較佳實施例之封裝結構示意圖。
The first figure is a schematic structural view of a preferred embodiment of the present invention;
2 is a schematic structural view of a light-emitting diode wafer according to a preferred embodiment of the present invention;
3A to 3D: a schematic diagram of a structure of a light emitting diode according to a preferred embodiment of the present invention;
4A~4D: a schematic diagram of a structure of a light emitting diode according to another preferred embodiment of the present invention;
FIG. 5 is a schematic view showing the structure of a light-emitting diode wafer according to still another preferred embodiment of the present invention; and FIG. 6 is a schematic view showing a package structure according to a preferred embodiment of the present invention.
1．．．基板1. . . Substrate
11．．．絕緣散熱層11. . . Insulating heat sink
2．．．金屬電極區2. . . Metal electrode area
21．．．第一金屬電極twenty one. . . First metal electrode
22．．．第二金屬電極twenty two. . . Second metal electrode
31．．．第一電極31. . . First electrode
32．．．第二電極32. . . Second electrode
33．．．磊晶層33. . . Epitaxial layer
4．．．類鑽碳膜4. . . Diamond-like carbon film
6．．．導電導熱膠6. . . Conductive and thermal conductive adhesive
83．．．第一金屬電極之表面83. . . Surface of the first metal electrode
84．．．第二金屬電極之表面84. . . Surface of the second metal electrode
Claims (11)
一基板；
一金屬電極區，設置於該基板之上，係包含一第一金屬電極；以及
一發光二極體晶片，其具有一磊晶層，並於該磊晶層之一上部具有一第一電極；
其中該發光二極體晶片係以其該磊晶層之一側部方向設置於該基板上，使該第一電極與該第一金屬電極電性耦接。A light-emitting element comprising:
a substrate;
a metal electrode region, disposed on the substrate, comprising a first metal electrode; and a light emitting diode chip having an epitaxial layer and having a first electrode on one of the epitaxial layers;
The light emitting diode chip is disposed on the substrate in a side direction of the epitaxial layer, and the first electrode is electrically coupled to the first metal electrode.
Priority Applications (52)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101125599A TWI479695B (en) | 2012-07-16 | 2012-07-16 | A light emitting diode chip and a light emitting element |
| US13/834,246 US9166116B2 (en) | 2012-05-29 | 2013-03-15 | Light emitting device |
| US13/845,160 US9065022B2 (en) | 2012-05-29 | 2013-03-18 | Light emitting apparatus |
| CN2013202827950U CN203277498U (en) | 2012-05-29 | 2013-05-22 | Light-emitting component and device base of light-emitting device thereof |
| CN201310191943.2A CN103456728B (en) | 2012-05-29 | 2013-05-22 | Light-emitting component and light-emitting device thereof |
| CN201310191944.7A CN103456863B (en) | 2012-05-29 | 2013-05-22 | light emitting device |
| CN201310191955.5A CN103453357B (en) | 2012-05-29 | 2013-05-22 | Light emitting assembly |
| CN201310191958.9A CN103456869B (en) | 2012-05-29 | 2013-05-22 | Light-emitting device, light-emitting diode chip for forming multi-directional light emission and sapphire substrate thereof |
| CN201610696438.7A CN106252491A (en) | 2012-05-29 | 2013-05-22 | Light-emitting device |
| CN2013202827787U CN203325967U (en) | 2012-05-29 | 2013-05-22 | Light emitting device |
| CN2013202827664U CN203300693U (en) | 2012-05-29 | 2013-05-22 | Light emitting diode chip capable of emitting light in multiple directions and light emitting device thereof |
| CN2013202827946U CN203277485U (en) | 2012-05-29 | 2013-05-22 | Light-emitting device, light-emitting diode chip for forming multi-directional light emission and sapphire substrate thereof |
| CN2013202827772U CN203277380U (en) | 2012-05-29 | 2013-05-22 | Light-emitting component and light-emitting device thereof |
| CN2013202827433U CN203322771U (en) | 2012-05-29 | 2013-05-22 | Light emitting assembly |
| JP2013112370A JP6504739B2 (en) | 2012-05-29 | 2013-05-28 | Light emitting element, light emitting device and base for device |
| JP2013111835A JP6367526B2 (en) | 2012-05-29 | 2013-05-28 | Sapphire substrate, light emitting diode chip, and light emitting device for forming a light emitting diode chip capable of emitting light in a plurality of directions |
| US13/903,998 US20130320363A1 (en) | 2012-05-29 | 2013-05-28 | Sapphire substrate configured to form light emitting diode chip providing light in multi-directions, light emitting diode chip, and illumination device |
| DE202013012548.9U DE202013012548U1 (en) | 2012-05-29 | 2013-05-29 | Light-emitting element, lighting device and its device frame |
| DE202013012698.1U DE202013012698U1 (en) | 2012-05-29 | 2013-05-29 | Light-emitting element, lighting device and its device frame |
| DE202013012509.8U DE202013012509U1 (en) | 2012-05-29 | 2013-05-29 | Light-emitting element, lighting device and its device frame |
| KR1020130061002A KR20130133696A (en) | 2012-05-29 | 2013-05-29 | Sapphire substrate configured to form light emitting diode chip providing light in multi-directions, light emitting diode chip and illumination device |
| EP18185878.8A EP3415807B1 (en) | 2012-05-29 | 2013-05-29 | Illumination device |
| EP21197696.4A EP3951869A1 (en) | 2012-05-29 | 2013-05-29 | Illumination device |
| KR1020130061001A KR102129533B1 (en) | 2012-05-29 | 2013-05-29 | Light emitting element, illumination device and foundation thereof |
| DE202013012554.3U DE202013012554U1 (en) | 2012-05-29 | 2013-05-29 | Light-emitting element, lighting device and its device frame |
| DE202013012711.2U DE202013012711U1 (en) | 2012-05-29 | 2013-05-29 | Light-emitting element, lighting device and its device frame |
| DE202013012707.4U DE202013012707U1 (en) | 2012-05-29 | 2013-05-29 | Light-emitting element, lighting device and its device frame |
| EP18196452.9A EP3454369A1 (en) | 2012-05-29 | 2013-05-29 | Illumination device and device frame thereof |
| EP13169803.7A EP2669947B1 (en) | 2012-05-29 | 2013-05-29 | Illumination device comprising light emitting diode chip providing light in multi-directions |
| DE202013012729.5U DE202013012729U1 (en) | 2012-05-29 | 2013-05-29 | Light-emitting element, lighting device and its device frame |
| EP21186715.5A EP3961706A1 (en) | 2012-05-29 | 2013-05-29 | Illumination device |
| EP13169790.6A EP2669946B1 (en) | 2012-05-29 | 2013-05-29 | Illumination device |
| US13/904,038 US9123868B2 (en) | 2012-05-29 | 2013-05-29 | Light emitting element and illumination device thereof |
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| US14/218,944 US20180006199A9 (en) | 2012-05-29 | 2014-03-18 | Semiconductor light emitting element with dispersive optical unit and illumination device comprising the same |
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| US14/340,574 US9711490B2 (en) | 2012-05-29 | 2014-07-25 | Illumination device |
| US14/886,787 US9741699B2 (en) | 2012-05-29 | 2015-10-19 | Light emitting device |
| US15/631,482 US10030857B2 (en) | 2012-05-29 | 2017-06-23 | Illumination device |
| US15/663,125 US10247395B2 (en) | 2012-05-29 | 2017-07-28 | Light emitting device |
| JP2018002356A JP6629359B2 (en) | 2012-05-29 | 2018-01-11 | Light emitting element, light emitting device and device base |
| US16/016,401 US10281123B2 (en) | 2012-05-29 | 2018-06-22 | Illumination device |
| JP2018128212A JP6680834B2 (en) | 2012-05-29 | 2018-07-05 | Light emitting device |
| US16/365,115 US10670244B2 (en) | 2012-05-29 | 2019-03-26 | Light emitting device |
| US16/404,187 US10655826B2 (en) | 2012-05-29 | 2019-05-06 | Illumination device |
| KR1020190145749A KR102139291B1 (en) | 2012-05-29 | 2019-11-14 | Illumination device |
| JP2020049778A JP7050841B2 (en) | 2012-05-29 | 2020-03-19 | Light emitting device |
| US16/876,987 US10989396B2 (en) | 2012-05-29 | 2020-05-18 | Illumination device |
| US16/887,948 US11255524B2 (en) | 2012-05-29 | 2020-05-29 | Light emitting device |
| KR1020200078506A KR102246243B1 (en) | 2012-05-29 | 2020-06-26 | Light emitting element, illumination device and foundation thereof |
| KR1020200091689A KR102287651B1 (en) | 2012-05-29 | 2020-07-23 | Illumination device |
| US17/651,891 US11808436B2 (en) | 2012-05-29 | 2022-02-21 | Light emitting apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| TW101125599A TWI479695B (en) | 2012-07-16 | 2012-07-16 | A light emitting diode chip and a light emitting element |
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| TW201405869A true TW201405869A (en) | 2014-02-01 |
| TWI479695B TWI479695B (en) | 2015-04-01 |
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| CN112968118A (en) * | 2020-11-13 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Display backboard manufacturing method and display backboard |
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| JP2004200209A (en) * | 2002-12-16 | 2004-07-15 | Fuji Xerox Co Ltd | Method of forming conductive pattern of electrode, etc., surface light emitting type semiconductor laser using the same, and its manufacturing method |
| CN100549128C (en) * | 2004-03-22 | 2009-10-14 | 株式会社藤仓 | Oxonitride phosphor and luminescent device |
| TWI268003B (en) * | 2005-12-20 | 2006-12-01 | Univ Nat Cheng Kung | Manufacturing method of LED |
| TWI360892B (en) * | 2007-11-01 | 2012-03-21 | Epistar Corp | Light-emitting device |
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| CN112968118A (en) * | 2020-11-13 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Display backboard manufacturing method and display backboard |
| CN112968118B (en) * | 2020-11-13 | 2022-05-13 | 重庆康佳光电技术研究院有限公司 | Display backboard manufacturing method and display backboard |
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| TWI479695B (en) | 2015-04-01 |
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