CN112968118B - Display backboard manufacturing method and display backboard - Google Patents
Display backboard manufacturing method and display backboard Download PDFInfo
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- CN112968118B CN112968118B CN202011270583.1A CN202011270583A CN112968118B CN 112968118 B CN112968118 B CN 112968118B CN 202011270583 A CN202011270583 A CN 202011270583A CN 112968118 B CN112968118 B CN 112968118B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Abstract
The invention relates to a display back plate and a manufacturing method thereof. Through the prepared epitaxial unit, the posture of the epitaxial unit is adjusted through the spatial light modulation substrate, so that the epitaxial unit comprises at least two light emitting directions, the single light emitting direction is avoided, the light mixing performance is improved, and the display effect of the display back plate is further improved.
Description
Technical Field
The invention relates to the field of semiconductor devices, in particular to a display back plate and a manufacturing method thereof.
Background
Light Emitting Diodes (LEDs) are a new generation of display technology, have higher photoelectric efficiency, higher brightness, higher contrast and lower power consumption than liquid crystal displays in related technologies, can be combined with flexible panels to realize flexible displays, and are widely applied in related fields. The Mini-LED display is based on an inorganic semiconductor LED, the distance between lamp beads is a novel display technology from 50 micrometers to 200 micrometers, and the Mini-LED can be used as a backlight source of an LCD display and applied to the super-large screen high-definition display, such as professional fields of monitoring and commanding, high-definition broadcasting, high-end cinemas, medical detection and the like or the commercial fields of outdoor advertisements, conference exhibition, office display and the like. The Mini-LED light-emitting display back plate needs that the mixed light between adjacent LED chips is more uniform and better, and in the prior art, the flip LED chips are generally used to emit light from the front side as a backlight source, so that the light-emitting angles of the flip LED chips are all fixed to be perpendicular to the light-emitting of the circuit back plate, resulting in poor mixed light effect.
Therefore, how to improve the light mixing degree of the display back plate and improve the display effect is a problem that needs to be solved urgently.
Disclosure of Invention
In view of the above-mentioned deficiencies of the related art, an object of the present invention is to provide a method for manufacturing a display backplane and a display backplane, which are used to solve the problems of poor light mixing degree and poor display effect of the display backplane in the related art.
A manufacturing method of a display backboard comprises the following steps:
respectively installing each prepared epitaxial cell on each modulation cell of a spatial light modulation substrate, wherein the side surface of each epitaxial cell is in contact with each modulation cell;
controlling the activity of the modulation unit to obtain at least one epitaxial unit in a first installation state and at least one epitaxial unit in a second installation state;
and maintaining the current installation state of each epitaxial unit, transferring each epitaxial unit from the spatial light modulation substrate to one side of the circuit backboard, and electrically connecting the epitaxial units with the circuit backboard.
According to the manufacturing method of the display backboard, the epitaxial unit is prepared, and the posture of the epitaxial unit is adjusted through the spatial light modulation substrate, so that the epitaxial unit comprises at least two light emitting directions, the single light emitting direction is avoided, the light mixing performance is improved, and the display effect of the display backboard is further improved.
Optionally, before the epitaxial cells to be prepared are respectively mounted on the modulation cells of the spatial light modulation substrate, the method further includes:
growing an epitaxial layer on a growth substrate, wherein the epitaxial layer sequentially comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer from the position close to the growth substrate to the position far away from the growth substrate;
and cutting the epitaxial layer along the growth direction of the layer structure of the epitaxial layer to obtain a plurality of epitaxial units.
Optionally, before the epitaxial cells to be prepared are mounted on the modulation cells of the spatial light modulation substrate, the method further includes:
transferring the epitaxial cell from the growth substrate onto a temporary substrate, wherein the second semiconductor layer is connected in contact with the temporary substrate;
transferring the epitaxial units on the temporary substrate onto a first transfer device, wherein the first transfer device comprises a first transfer plate and a plurality of first transfer heads, the first transfer heads are fixedly arranged on the first transfer plate, each epitaxial unit is transferred onto each first transfer head, and part of the first semiconductor layer is in contact connection with the first transfer heads;
through a second transfer device, a second transfer head on the second transfer device presses the epitaxial unit on the first transfer head, so that the epitaxial unit falls on the first transfer plate after rotating along a first direction, and the side surface of the epitaxial unit is directly in contact connection with the first transfer plate.
Optionally, before the epitaxial cells to be prepared are mounted on the modulation cells of the spatial light modulation substrate, the method further includes:
transferring the epitaxial cell from the growth substrate onto a temporary substrate, wherein the second semiconductor layer is connected in contact with the temporary substrate;
transferring the epitaxial cells on the temporary substrate onto a first transfer device, wherein the first transfer device comprises a first transfer plate and a plurality of first transfer heads, the first transfer heads are fixedly arranged on the first transfer plate, each epitaxial cell is transferred onto each first transfer head, and part of the first semiconductor layer is in contact connection with the first transfer heads;
through a second transfer device, a second transfer head on the second transfer device presses the epitaxial unit on the first transfer head, so that the epitaxial unit falls on the second transfer plate after rotating along the first direction, and the side surface of the epitaxial unit is directly in contact connection with the second transfer plate.
Optionally, the length and the width of the first transfer head on the first transfer device are both less than or equal to the width of the epitaxial cell.
Optionally, the maintaining a current mounting state of each epitaxial cell, and transferring each epitaxial cell from the spatial light modulation substrate to one side of the circuit backplane includes:
presetting liquid photoresist on the circuit backboard;
transferring the epitaxial units onto the circuit backboard through the space light transfer substrate, wherein at least part of each epitaxial unit is immersed in the photoresist;
and in the process of curing the photoresist, maintaining the installation state between the epitaxial unit and the space light transfer substrate.
Optionally, the method further includes:
and after the photoresist is cured, at least removing the photoresist on the electrode area of the circuit backboard through development to expose the first bonding pad and the second bonding pad of each electrode area.
Optionally, the method further includes:
forming a first metal contact part and a second metal contact part on the outer side of the photoresist around each epitaxial cell;
one end of the first metal contact part is in contact with a first semiconductor layer of the epitaxial unit, and the other end of the first metal contact part is in contact with the first pad;
one end of the second metal contact part is in contact with the second semiconductor layer of the epitaxial unit, and the other end of the second metal contact part is in contact with the second bonding pad.
Optionally, the spatial light modulation substrate includes a digital micromirror device chip, the modulation unit includes micro vibrating mirrors disposed on the digital micromirror device chip, each micro vibrating mirror is used for bearing the epitaxial unit, and a side surface of each epitaxial unit directly contacts a bearing surface of the micro vibrating mirror; the bearing surfaces of the micro vibrating mirrors corresponding to the epitaxial unit in the first installation state and the epitaxial unit in the second installation state are not parallel.
Based on the same inventive concept, the invention also provides a display backboard, which comprises a circuit backboard and a plurality of epitaxial units; according to the display back plate manufacturing method, the epitaxial unit and the circuit back plate are used for manufacturing the display back plate.
The display back plate is manufactured by the display back plate manufacturing method, so that the single light emitting direction is avoided, the light mixing performance is improved, and the display effect of the display back plate is further improved.
Drawings
FIG. 1 is a schematic top view of a prior art display backplane structure;
FIG. 2 is a schematic cross-sectional view of a prior art backplate structure;
FIG. 3 is a flowchart of a method for manufacturing a display backplane according to an embodiment of the present invention;
fig. 4 is a schematic view of an epitaxial cell structure according to an embodiment of the invention;
fig. 5 is a schematic structural diagram of a spatial light modulation substrate according to an embodiment of the present invention;
fig. 6a is a schematic diagram of a state of a modulation unit 0 according to an embodiment of the present invention;
fig. 6b is a schematic diagram of a state of the modulation unit 1 according to the embodiment of the present invention;
fig. 7 is a schematic diagram illustrating a state control of a modulation unit according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of an exemplary grown epitaxial layer;
fig. 9 is a schematic diagram of an epitaxial cell obtained by dicing according to an embodiment of the invention;
fig. 10 is a schematic view of transferring an epitaxial cell to a temporary substrate according to an embodiment of the invention;
FIG. 11 is a schematic diagram of an embodiment of a transfer epitaxial cell to a transfer device;
fig. 12a is a schematic view of an epitaxial cell according to an embodiment of the invention after rotation;
fig. 12b is a schematic view of another epitaxial cell according to an embodiment of the present invention after rotation;
fig. 13 is a schematic diagram of transferring an epitaxial cell to a DMD chip according to an embodiment of the invention;
fig. 14 is a schematic diagram illustrating transferring an epitaxial cell to a circuit backplane according to an embodiment of the present invention;
fig. 15 is a schematic view of an overall structure of a display backplane according to an embodiment of the present invention.
Description of reference numerals:
10-an epitaxial unit; 11-a first semiconductor layer; 12-a second semiconductor layer; 13-a light-emitting layer; 20-a circuit backplane; 201-LED chip; 21-electrode area; 30-a growth substrate; 40-a temporary substrate; 50-a first transfer device; 51-a first transfer plate; 52-first transfer head; 501-a second transfer device; 511-a second transfer plate; 521-a second transfer head; 60-a spatial light modulation substrate; 61-a modulation unit; 70-photoresist; 81-a first metal contact; 82-second metal contact.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
Referring to fig. 1, fig. 1 is a top view of a display backplane structure in the prior art, wherein LED chips 201 are mounted on a circuit backplane 20 in an array arrangement; referring to fig. 2, fig. 2 is a cross-sectional view taken along line X in fig. 1, in which the structure and light-emitting angle of the LED chip 201 are shown schematically, and it can be seen that the light-emitting angle of the flip-chip LED chip 201 adopted in the prior art is perpendicular to the display back plate 20, which is not favorable for uniform light mixing.
Based on this, the present invention intends to provide a solution to the above technical problem, the details of which will be explained in the following embodiments.
Referring to fig. 3, the method for manufacturing a display backplane according to the embodiment includes:
s301, mounting each prepared epitaxial cell 10 on each modulation cell 61 of the spatial light modulation substrate 60 respectively, wherein the side face of each epitaxial cell 10 is in contact with each modulation cell 61;
s302, controlling the activity of the modulation unit 61 to obtain at least one epitaxial cell 10 in a first installation state and at least one epitaxial cell 10 in a second installation state;
and S303, maintaining the current installation state of each epitaxial unit 10, transferring each epitaxial unit 10 from the spatial light modulation substrate 60 to one side of the circuit backboard 20, and electrically connecting the epitaxial units with the circuit backboard 20.
In the embodiment of the invention, the display back plate adopts a plurality of light emitting diodes arranged in an array as light sources for displaying; in the embodiment of the present invention, the epitaxial unit 10 is equivalent to a light emitting diode without an electrode structure, that is, the light emitting diode includes a first semiconductor layer 11, a second semiconductor layer 12, and a light emitting layer 13 disposed therebetween, as shown in fig. 4, in other words, the epitaxial unit 10 is equivalent to a light emitting diode without an electrode structure. In the epitaxial unit 10, the light-emitting layer 13 includes a quantum well layer; the first semiconductor layer 11 and the second semiconductor layer 12 each include one of an N-type doped gallium nitride layer and a P-type doped gallium nitride layer. That is, if the first semiconductor layer 11 is an N-type doped gallium nitride layer, the second semiconductor layer 12 is a P-type doped gallium nitride layer; if the first semiconductor layer 11 is a P-type doped gallium nitride layer, the second semiconductor layer 12 is an N-type doped gallium nitride layer. When an electric signal is applied to the first semiconductor layer 11 and the second semiconductor layer 12, electrons in the N-type semiconductor layer and holes in the P-type semiconductor layer are recombined by intense collision in the light emitting layer 13 to generate photons, and energy is emitted in the form of photons, that is, the light emitting layer 13 emits light.
The epitaxial cell 10 has a substantially rectangular parallelepiped structure, and has four side surfaces in a stacking direction of the layer structures, each of the side surfaces including three layers, i.e., a first semiconductor layer, a light emitting layer, and a second semiconductor layer. In the embodiment of the present invention, the side surfaces of the epitaxial cell 10 all represent the side surfaces in the stacking direction of the epitaxial cell 10, and the top surface and the bottom surface of the epitaxial cell 10 represent the outer surfaces of the first semiconductor layer and the second semiconductor layer, and during the mounting process, the top surface and the bottom surface of the epitaxial cell 10 may be interchanged, and the side surface represents any one of the four side surfaces.
In order to improve the light mixing performance of the display backplane, in the present embodiment, the epitaxial cell 10 is first mounted on each modulation cell 61 of the spatial light modulation substrate 60, wherein the side surface of the epitaxial cell 10 is in contact with the modulation cell 61. The spatial light modulation substrate 60 is a device for adjusting the light emitting direction of the epitaxial cell 10, the light emitted from the epitaxial cell 10 comes from the light emitting layer in the layer structure, the light emitted from the light emitting layer includes the light directly emitted therefrom and the light emitted after being refracted by the first semiconductor layer and the second semiconductor layer, wherein the light directly emitted from the light emitting layer is the main light. In other words, the light output of the epitaxial cell 10 is related to the posture thereof, i.e., the angle of the light-emitting layer; the modulating unit 61 on the spatial light modulating substrate 60 can adjust the posture of the epitaxial unit 10, so that the directions of the light emitting layers are different, and the light emitting effect at different angles is realized. The side surface of the modulation unit 61 is in contact with the epitaxial unit 10, so that the main light-emitting direction of the epitaxial unit 10 is substantially perpendicular to the modulation unit 61 on the spatial light modulation substrate 60.
Each modulation unit 61 corresponds to one epitaxial unit 10, and the epitaxial units 10 are mounted on different modulation units 61 one by one to be adjusted. The adjustment mode is to control the movement of the modulation unit 61, and drive the epitaxy unit 10 according to the spatial posture of the modulation unit 61, so that the epitaxy unit 10 moves along with the modulation unit 61 to present a corresponding spatial posture. In some embodiments, the spatial light modulation substrate 60 may include a Digital Micromirror Device (DMD) chip, the modulation unit 61 may include Micro-electromechanical Systems (MEMS) Micro-mirrors disposed on the DMD chip, each Micro-mirror is used for carrying the epitaxial unit 10, and a side surface of each epitaxial unit 10 directly contacts with a carrying surface of the Micro-mirror; the bearing surfaces of the micro mirrors corresponding to the epitaxial cell 10 in the first mounting state and the epitaxial cell 10 in the second mounting state are not parallel. The epitaxial cell 10 is mounted on the MEMS micro mirror on the DMD chip, and the epitaxial cell 10 may be bonded by coating a glue layer on the MEMS micro mirror of the DMD chip. Wherein, the glue layer can be of PI main chain type.
After the epitaxial unit 10 is mounted on the MEMS micro galvanometer of the DMD chip, each of the MEMS micro galvanometers on the DMD chip may rotate under independent control, and the rotation state thereof has at least two states, which may be regarded as two states of 0 and 1; by using the characteristic of the MEMS micro galvanometer, random independent control can be performed on each MEMS micro galvanometer on the DMD chip, so that the MEMS micro galvanometer exhibits a random 0 state or 1 state, and the spatial direction of the epitaxial cell 10 can also exhibit a random tilt state along with the random state of the MEMS micro galvanometer, that is, the first mounting state and the second mounting state, and the main light emitting directions of the epitaxial cell 10 in the first mounting state and the epitaxial cell 10 in the second mounting state are different. If the epitaxial cell 10 is bonded to the circuit back plate 20 while maintaining such a random tilt, a better light mixing effect can be achieved. Referring to fig. 5, fig. 6a, fig. 6b and fig. 7, schematic diagrams of the spatial light modulation substrate and the modulation unit being a DMD chip and a MEMS micro galvanometer respectively are shown, and the epitaxy unit 10 is driven to assume different states under random activities of the MEMS micro galvanometer. Wherein, fig. 6a can represent one of the installation states, i.e. the 0 state; fig. 6b may represent another installation state, i.e. the 1 state.
Then, after the mounting state of the epitaxial cells 10 is adjusted by the modulation unit 61 on the spatial light modulation substrate 60, the current state of each epitaxial cell 10 is maintained, and each epitaxial cell 10 is transferred to one side of the circuit backplane 20 and electrically connected to the circuit backplane 20. The current state of the epitaxial cells 10, that is, the mounting state of each epitaxial cell 10, is maintained, and the mounting state is also maintained when the display backplane is fixed to the circuit backplane 20, so that the light mixing effect of the display backplane is better.
In some embodiments, before the prepared epitaxial cells 10 are respectively mounted on the modulation cells 61 of the spatial light modulation substrate 60, the method may further include: preparing a plurality of epitaxial cells 10, which may specifically include:
growing an epitaxial layer on a growth substrate 30, wherein the epitaxial layer sequentially comprises a first semiconductor layer 11, a light-emitting layer 13 and a second semiconductor layer 12 along the direction from the growth substrate 30 to the direction away from the growth substrate 30;
the epitaxial layer is cut along the growth direction of the layer structure of the epitaxial layer to obtain a plurality of epitaxial units 10. In the embodiment of the present invention, the epitaxial unit 10 can be prepared in batch, that is, a large-scale epitaxial layer is grown on the growth substrate 30, and the layer structure of the epitaxial layer is the same as that of a single epitaxial unit 10, but has a larger area, and can be split into a plurality of epitaxial units 10, as shown in fig. 8. The growth direction of the epitaxial layer may be along a direction from the growth substrate 30 to the growth substrate 30, and the layer structures of the epitaxial layer are the first semiconductor layer 11, the light emitting layer 13, and the second semiconductor layer 12. In this embodiment, the first semiconductor layer 11 and the second semiconductor layer 12 are named differently only for convenience of description, and the first semiconductor layer 11 and the second semiconductor layer 12 are respectively a P-type semiconductor layer and an N-type semiconductor layer or vice versa, and this embodiment is not limited thereto.
After the epitaxial layer is grown, dicing may be performed along the growth direction of the epitaxial layer, the dicing size is consistent with the size of the epitaxial cell 10, and after dicing, a single epitaxial cell 10 is obtained, please refer to fig. 9.
In some embodiments, before mounting each epitaxial cell 10 on each modulation cell 61 of the spatial light modulation substrate 60, the method may further include:
transferring the epitaxial cell 10 from the growth substrate 30 onto the temporary substrate 40, wherein the second semiconductor layer 12 is connected in contact with the temporary substrate 40;
transferring the epitaxial cells 10 on the temporary substrate 40 onto a first transfer device 50, wherein the first transfer device 50 comprises a first transfer plate 51 and a plurality of first transfer heads 52, the first transfer heads 52 are fixedly arranged on the first transfer plate 51, each epitaxial cell 10 is respectively transferred onto each first transfer head 52, and part of the first semiconductor layer 12 is in contact connection with the first transfer heads 52;
the second transfer head of the second transfer device presses the epitaxial cell 10 on the first transfer head 52 by the second transfer device, so that the epitaxial cell 10 falls on the first transfer plate 51 after rotating along the first direction, and the side surface of the epitaxial cell 10 is directly contacted and connected with the first transfer plate 51. In order to transfer the epitaxial cell 10 onto the spatial light modulation substrate 60 in a desired posture, the epitaxial cell 10 may be transferred onto the temporary substrate 40 after the epitaxial cell 10 is prepared, as shown in fig. 10; since the layer structure of the epitaxial cell 10 is parallel to the growth substrate 30, the layer structure of the epitaxial cell 10 is also parallel to the temporary substrate 40 when transferred onto the temporary substrate 40. For the sake of simplicity of transfer, on the temporary substrate 40, the surface of the epitaxial cell 10 in contact with the temporary substrate 40 is opposite to that on the growth substrate 30, that is, on the growth substrate 30, the surface in contact with the growth substrate 30 is the first semiconductor layer 11, and on the temporary substrate 40, the surface in contact with the temporary substrate 40 is the second semiconductor layer 12. In the process of transferring the epitaxial cells 10 to the temporary substrate 40, for the convenience of the subsequent transfer process, among the epitaxial cells 10 that are originally densely arranged on the growth substrate 30, a specific epitaxial cell 10 is selectively transferred to the temporary substrate 40, leaving a certain vacancy between the epitaxial cells 10, and preparing for the subsequent rotation. When the epitaxial cell 10 is transferred from the growth substrate 30 onto the temporary substrate 40, the epitaxial cell 10 and the growth substrate 30 may be separated by laser lift-off, and then transferred onto the temporary substrate 40.
After the epitaxial cell 10 is transferred to the temporary substrate 40, the epitaxial cell 10 on the temporary substrate 40 is transferred to the first transfer device 50, please refer to fig. 11. The first transfer device 50 has a structure having a first transfer plate 51 and a plurality of first transfer heads 52, wherein the first transfer heads 52 are fixedly connected to the first transfer plate 51, and the first transfer heads 52 extend outward from the surface of the first transfer plate 51. When transferring the epitaxial cell 10 to the first transfer device 50, the epitaxial cell 10 is first transferred to the first transfer head 52, and the layer structure of the epitaxial cell 10 is parallel to the top plane of the first transfer head 52 and the first transfer plate 51. Then, the epitaxy unit 10 on the first transfer head 52 is rotated along the first direction and then dropped on the first transfer plate 51, and due to the rotation, the layer structure of the epitaxy unit 10 changes from being parallel to the first transfer plate 51 to being perpendicular to the first transfer plate 51, that is, the normal direction of the layer structure of the epitaxy unit 10 is parallel to the plane of the first transfer plate 51, and the side surface of the epitaxy unit 10 directly contacts with the first transfer plate 51, please refer to fig. 12 a. In this case, the light-emitting angle of the epitaxial cell 10 is substantially perpendicular to the first transfer plate 51. The first transfer device 50 may be made of natural rubber or synthetic rubber, or a siloxane-based polymer, wherein the siloxane-based polymer may include Polydimethylsiloxane (PDMS) or Hexamethyldisiloxane (HMDSO); and can also be made of polyurethane or polyurethane acrylate. When transferring the epitaxial cell 10 from the temporary substrate 40 onto the first transfer device 50, the epitaxial cell 10 may be separated from the temporary substrate 40 by laser selective debonding.
In some embodiments, before mounting each epitaxial cell 10 on each modulation cell 61 of the spatial light modulation substrate 60, the method may further include:
transferring the epitaxial cell 10 from the growth substrate 30 onto the temporary substrate 40, wherein the second semiconductor layer 12 is connected in contact with the temporary substrate 40;
transferring the epitaxial cells 10 on the temporary substrate 40 onto a first transfer device 50, wherein the first transfer device 50 comprises a first transfer plate 51 and a plurality of first transfer heads 52, the first transfer heads 52 are fixedly arranged on the first transfer plate 51, each epitaxial cell 10 is respectively transferred onto each first transfer head 52, and part of the first semiconductor layer 11 is in contact connection with the first transfer heads 52;
the second transfer head on the second transfer device presses the epitaxial cell 10 on the first transfer head 52 by the second transfer device, so that the epitaxial cell 10 falls on the second transfer plate after rotating along the first direction, and the side surface of the epitaxial cell 10 is directly contacted and connected with the second transfer plate. Similar to the above-mentioned transfer process, the difference is that in the above-mentioned transfer process, the epitaxial cell 10 is located on the first transfer plate 51 of the first transfer device 50, and in the present transfer process, the epitaxial cell 10 is located on the second transfer plate of the second transfer device, and both of them have no substantial difference, and can be used as a feasible transfer scheme for the epitaxial cell 10. The first transfer device 51 and the second transfer device may have the same structure, please refer to fig. 12 b.
In some embodiments, the length and width of the first transfer head 52 on the first transfer device 50 are less than or equal to the width of the epitaxial cell 10. To facilitate the transfer of the epitaxial cell 10, the width of the first transfer head 52 is set to be less than or equal to the width of the epitaxial cell 10, preferably less than half the width of the epitaxial cell 10, so that the epitaxial cell 10 can be rotated more easily; the length of the first transfer head 52 is less than or equal to the width of the epitaxial cell 10, so that when the epitaxial cell 10 is rotated and then falls on the first transfer plate 51, the epitaxial cell 10 protrudes from the surface of the first transfer plate 51 more than the first transfer head 52, which is convenient for the subsequent transfer process, i.e. transferring the epitaxial cell to the spatial light modulation substrate 60, please refer to fig. 13.
In some embodiments, maintaining the current mounting state of each epitaxial cell 10, transferring each epitaxial cell 10 from the spatial light modulation substrate 60 to one side of the circuit backplane 20 may include:
presetting liquid photoresist 70 on the circuit backboard 20;
transferring the epitaxial cells 10 onto the circuit backplane 20 through the spatial light modulation substrate 60, with each epitaxial cell 10 at least partially immersed in the photoresist 70;
during the curing of the photoresist 70, the mounting state between the epitaxial cell 10 and the spatial light transfer substrate is maintained. In order to maintain the state of the epitaxial cell 10, when the epitaxial cell 10 is transferred onto the circuit backplate 20, the mounting state between the epitaxial cell 10 and the spatial light modulation substrate 60 needs to be maintained so that the spatial state of the epitaxial cell 10 is not changed; on the circuit backplane 20, a liquid photoresist 70, that is, an uncured photoresist 70, may be pre-disposed, before it is cured, the epitaxial cell 10 is transferred onto the circuit backplane 20, and the epitaxial cell 10 is at least partially immersed in the photoresist 70, that is, for each epitaxial cell 10, a part of the epitaxial cell 10 is immersed in the photoresist 70, and at this time, the mounting state between the spatial light modulation substrate 60 and the epitaxial cell 10 is still maintained; after the photoresist 70 is solidified, the mounting state between the spatial light modulation substrate 60 and the epitaxial cell 10 is removed, so that the epitaxial cell 10 is connected to the circuit backplane 20 in the state set by the spatial light modulation substrate 60, as shown in fig. 14. Since the epitaxial cell 10 has at least two mounting states, such as the first mounting state and the second mounting state, on the spatial light modulation substrate 60, after being mounted on the circuit backplane 20, the epitaxial cell 10 has different light emitting directions corresponding to the mounting states, specifically including at least two main light emitting directions.
In some embodiments, it may further include:
after the photoresist 70 is cured, at least the photoresist 70 on the electrode regions 21 of the circuit backplane 20 is removed by development to expose the first pads and the second pads of the respective electrode regions 21. The photoresist 70 can be integrally covered on the circuit backboard 20 in advance; for electrical connection, the photoresist 70 on the first pad and the second pad on the electrode region 21 on the circuit backplane 20 may be removed by first irradiating with light and then washing away the photoresist 70 with a developer.
In some embodiments, it may further include:
forming a first metal contact 81 and a second metal contact 82 outside the photoresist 70 around each epitaxial cell 10;
one end of the first metal contact 81 is in contact with the first semiconductor layer 11 of the epitaxial cell 10, and the other end of the first metal contact is in contact with the first pad;
one end of the second metal contact 82 is in contact with the second semiconductor layer 12 of the epitaxial cell 10, and the other end of the second metal contact is in contact with the second pad.
The first metal contact 81 and the second metal contact 82 are equivalent to pins of the epitaxial cell 10, and can be electrically connected to the electrode area 21 on the circuit substrate through the pins, so as to electrically connect the epitaxial cell 10 and the circuit backplate 20, as shown in fig. 15.
The first metal contact 81 and the second metal contact 82 may be formed by various methods, such as three-dimensional printing using an aerosol ejector. The material composition of the first and second metal contacts 81 and 82 may include metals such as aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (mo), titanium (Ti), tungsten (W), or copper (Cu), and alloys thereof.
According to the manufacturing method of the display backboard, the epitaxial unit 10 is prepared, the light emitting direction of the epitaxial unit 10 is adjusted to be a random direction through the modulation unit 61 on the spatial light modulation substrate 60, so that the light emitting direction is prevented from being single, the light mixing performance is improved, and the display effect of the display backboard is further improved.
The embodiment of the invention also provides a display back plate, which comprises a circuit back plate 20 and a plurality of epitaxial units 10; by the display back plate manufacturing method in the embodiment of the invention, the display back plate is manufactured by the epitaxial unit 10 and the circuit back plate 20.
The display back plate is manufactured by the display back plate manufacturing method, so that the single light emitting direction is avoided, the light mixing performance is improved, and the display effect of the display back plate is further improved.
It can be understood that the display backplane of the present application can be applied to a backlight backplane in an LCD display, and the display backplane of the present application can be a mini-led backlight backplane or a micro-led backlight backplane, and the specific kind and application are not limited herein.
Embodiments of the present invention also provide a computer-readable storage medium including volatile or non-volatile, removable or non-removable media implemented in any method or technology for storage of information such as computer-readable instructions, data structures, computer program modules or other data. Computer-readable storage media include, but are not limited to, RAM (Random Access Memory), ROM (Read-Only Memory), EEPROM (Electrically Erasable Programmable Read-Only Memory), flash Memory or other Memory technology, CD-ROM (Compact disk Read-Only Memory), Digital Versatile Disks (DVD) or other optical disk storage, magnetic cassettes, magnetic tape, magnetic disk storage or other magnetic storage devices, or any other medium which can be used to store the desired information and which can be accessed by a computer.
The computer readable storage medium in the embodiment of the present invention may be used for storing one or more computer programs, and the stored one or more computer programs may be executed by a processor to implement at least one step performed by the above-mentioned backplane manufacturing method.
The embodiment of the present invention further provides a computer program (or called computer software), which can be distributed on a computer readable medium and executed by a computing device to implement at least one step executed by the above-mentioned backplane manufacturing method; and in some cases at least one of the steps shown or described may be performed in an order different than that described in the embodiments above.
Embodiments of the present invention further provide a computer program product, which includes a computer readable device, where the computer program as shown above is stored on the computer readable device. The computer readable device in the embodiment of the present invention may include a computer readable storage medium as shown above.
It will be apparent to those skilled in the art that all or some of the steps of the methods, systems, functional modules/units in the devices disclosed above may be implemented as software (which may be implemented in computer program code executable by a computing device), firmware, hardware, and suitable combinations thereof. In a hardware implementation, the division between functional modules/units mentioned in the above description does not necessarily correspond to the division of physical components; for example, one physical component may have multiple functions, or one function or step may be performed by several physical components in cooperation. Some or all of the physical components may be implemented as software executed by a processor, such as a central processing unit, digital signal processor, or microprocessor, or as hardware, or as an integrated circuit, such as an application specific integrated circuit.
In addition, communication media typically embodies computer readable instructions, data structures, computer program modules or other data in a modulated data signal such as a carrier wave or other transport mechanism and includes any information delivery media as known to one of ordinary skill in the art. Thus, the present invention is not limited to any specific combination of hardware and software.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. A manufacturing method of a display back plate is characterized by comprising the following steps:
respectively installing each prepared epitaxial cell on each modulation cell of a spatial light modulation substrate, wherein the side surface of each epitaxial cell is in contact with each modulation cell;
controlling the activity of the modulation unit to obtain at least one epitaxial unit in a first installation state and at least one epitaxial unit in a second installation state, wherein the first installation state is different from the second installation state;
and maintaining the current installation state of each epitaxial unit, transferring each epitaxial unit from the spatial light modulation substrate to one side of the circuit backboard, and electrically connecting the epitaxial units with the circuit backboard.
2. A method for fabricating a display backplate according to claim 1, wherein before the epitaxial cells to be prepared are mounted on the modulation cells of the spatial light modulation substrate, the method further comprises:
growing an epitaxial layer on a growth substrate, wherein the epitaxial layer sequentially comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer from the position close to the growth substrate to the position far away from the growth substrate;
and cutting the epitaxial layer along the growth direction of the layer structure of the epitaxial layer to obtain a plurality of epitaxial units.
3. The method for fabricating a display backplate according to claim 2, wherein the step of preparing each epitaxial cell before mounting each modulation cell on the spatial light modulation substrate further comprises:
transferring the epitaxial cell from the growth substrate onto a temporary substrate, wherein the second semiconductor layer is connected in contact with the temporary substrate;
transferring the epitaxial units on the temporary substrate onto a first transfer device, wherein the first transfer device comprises a first transfer plate and a plurality of first transfer heads, the first transfer heads are fixedly arranged on the first transfer plate, each epitaxial unit is transferred onto each first transfer head, and part of the first semiconductor layer is in contact connection with the first transfer heads;
the second transfer head on the second transfer device presses the epitaxial unit on the first transfer head, so that the epitaxial unit falls on the first transfer plate after rotating in the first direction, and the side face of the epitaxial unit is directly in contact connection with the first transfer plate.
4. The method for fabricating a display backplate according to claim 2, wherein the step of preparing each epitaxial cell before mounting each modulation cell on the spatial light modulation substrate further comprises:
transferring the epitaxial cell from the growth substrate onto a temporary substrate, wherein the second semiconductor layer is connected in contact with the temporary substrate;
transferring the epitaxial cells on the temporary substrate onto a first transfer device, wherein the first transfer device comprises a first transfer plate and a plurality of first transfer heads, the first transfer heads are fixedly arranged on the first transfer plate, each epitaxial cell is transferred onto each first transfer head, and part of the first semiconductor layer is in contact connection with the first transfer heads;
the epitaxy unit located on the first transfer head is pressed through a second transfer head on the second transfer device, so that the epitaxy unit falls on a second transfer plate of the second transfer device after rotating in the first direction, and the side face of the epitaxy unit is directly connected with the second transfer plate in a contact mode.
5. The method of claim 3 or 4, wherein a length and a width of the first transfer head on the first transfer device are less than or equal to a width of the epitaxial cell.
6. The method of fabricating a display backplane of any of claims 1-4, wherein maintaining a current mounting state of each of the epitaxial cells, transferring each of the epitaxial cells from the spatial light modulation substrate to a side of a circuit backplane comprises:
presetting liquid photoresist on the circuit backboard;
transferring the epitaxial units onto the circuit backboard through the space light transfer substrate, wherein at least part of each epitaxial unit is immersed in the photoresist;
and in the process of curing the photoresist, maintaining the installation state between the epitaxial unit and the space light transfer substrate.
7. The method of fabricating a display backplane of claim 6, further comprising:
and after the photoresist is cured, at least removing the photoresist on the electrode area of the circuit backboard through development to expose the first bonding pad and the second bonding pad of each electrode area.
8. The method of manufacturing a display backplane of claim 7, further comprising:
forming a first metal contact part and a second metal contact part on the outer side of the photoresist around each epitaxial cell;
one end of the first metal contact part is in contact with a first semiconductor layer of the epitaxial unit, and the other end of the first metal contact part is in contact with the first pad;
one end of the second metal contact part is in contact with the second semiconductor layer of the epitaxial unit, and the other end of the second metal contact part is in contact with the second bonding pad.
9. The method for fabricating a display backplane according to any one of claims 1 to 4, wherein the spatial light modulation substrate comprises a digital micromirror device chip, the modulation unit comprises micro vibrating mirrors disposed on the digital micromirror device chip, each micro vibrating mirror is used for carrying the epitaxial unit, and a side surface of each epitaxial unit directly contacts with a carrying surface of the micro vibrating mirror; the bearing surfaces of the micro vibrating mirrors corresponding to the epitaxial unit in the first installation state and the epitaxial unit in the second installation state are not parallel.
10. A display backboard comprises a circuit backboard and a plurality of epitaxial units; the display backplane manufactured by the method of any one of claims 1 to 9, wherein the epitaxial cell and the circuit backplane are bonded together to form the display backplane.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102629732A (en) * | 2011-02-04 | 2012-08-08 | 索尼公司 | Submount, submount assembly, and submount assembling method |
| TW201405869A (en) * | 2012-07-16 | 2014-02-01 | Formosa Epitaxy Inc | Light emitting device |
| CN110088920A (en) * | 2019-03-19 | 2019-08-02 | 京东方科技集团股份有限公司 | Transfer method and transfer device |
| CN111540762A (en) * | 2020-03-25 | 2020-08-14 | 重庆康佳光电技术研究院有限公司 | LED display panel and LED display |
| CN111668205A (en) * | 2020-01-20 | 2020-09-15 | 友达光电股份有限公司 | Display device and method for manufacturing display device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006113412A (en) * | 2004-10-15 | 2006-04-27 | Fuji Photo Film Co Ltd | Drawing method and apparatus |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102629732A (en) * | 2011-02-04 | 2012-08-08 | 索尼公司 | Submount, submount assembly, and submount assembling method |
| TW201405869A (en) * | 2012-07-16 | 2014-02-01 | Formosa Epitaxy Inc | Light emitting device |
| CN110088920A (en) * | 2019-03-19 | 2019-08-02 | 京东方科技集团股份有限公司 | Transfer method and transfer device |
| CN111668205A (en) * | 2020-01-20 | 2020-09-15 | 友达光电股份有限公司 | Display device and method for manufacturing display device |
| CN111540762A (en) * | 2020-03-25 | 2020-08-14 | 重庆康佳光电技术研究院有限公司 | LED display panel and LED display |
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