CN109326585B - Backlight module, manufacturing method thereof and display device - Google Patents
Backlight module, manufacturing method thereof and display device Download PDFInfo
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- CN109326585B CN109326585B CN201811159003.4A CN201811159003A CN109326585B CN 109326585 B CN109326585 B CN 109326585B CN 201811159003 A CN201811159003 A CN 201811159003A CN 109326585 B CN109326585 B CN 109326585B
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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Abstract
The application provides a backlight module and a manufacturing method thereof, and a display device, the backlight module comprises a substrate, a plurality of L ED chip structures arranged in an array manner and positioned on the substrate, an L ED chip structure comprises a first L ED chip structure and a second L ED chip structure which are arranged in a stacking manner, and a reflecting layer positioned between the first L ED chip structure and the second L ED chip structure, wherein the reflecting layer reflects light emitted by the first L ED chip structure and positioned between the substrate and the second L ED chip structure and departing from the surface of the substrate, so that the light is emitted from the side face of the first L ED chip structure.
Description
Technical Field
The invention relates to the technical field of display, in particular to a backlight module, a manufacturing method of the backlight module and a display device.
Background
With the development of L ED (L light-Emitting Diode) technology, L ED light source applied to a backlight module is smaller, and Mini L ED is gradually used as a light source in the backlight module, and Mini L ED is called a front body of Micro L ED (Micro L light-Emitting Diode) and has a size of about 50 micrometers to 60 micrometers.
The Mini L ED is a new branch of the current display screen, the technology can realize the local Dimming (L optical Dimming) design of the direct type backlight module, achieve the screen effect (HDR) with high dynamic range, make the picture finer and finer, provide a high-brightness surface light source, improve the brightness of the module, and reduce the power consumption of the backlight module by the local Dimming design.
However, the backlight module formed by Mini L ED in the prior art is prone to have a starry bad phenomenon in the display process, that is, the luminance of the L ED chip at the corresponding position is high, and the luminance between the adjacent L ED chips is low.
Disclosure of Invention
In view of the above, the present invention provides a backlight module, a manufacturing method thereof and a display device, so as to solve the problem of a bad starry phenomenon occurring in the display process of the backlight module in the prior art.
In order to achieve the purpose, the invention provides the following technical scheme:
a backlight module includes:
a substrate;
a plurality of L ED chip structures arranged in an array on one side of the substrate;
and a phosphor film on a side of the L ED chip structure facing away from the substrate;
the L ED chip structure comprises a first L ED chip structure and a second L ED chip structure which are arranged in a stacked mode, and a reflecting layer located between the first L ED chip structure and the second L ED chip structure, wherein the second L ED chip structure is located on the side, facing away from the substrate, of the first L ED chip structure;
light emitted by the first L ED chip structure is reflected by the reflective layer and exits the sides of the first L ED chip structure;
light emitted by the second L ED chip structure exits from a surface facing away from the substrate and a side of the second L ED chip structure.
The present invention also provides a display device including: the backlight module is described above.
The invention also provides a method for manufacturing the backlight module, which is characterized in that the method is used for forming the backlight module, and the method for manufacturing the backlight module comprises the following steps:
providing L ED chip structures and a substrate, wherein the L ED chip structure comprises a first L ED chip structure and a second L ED chip structure which are arranged in a stacked manner, and a reflecting layer positioned between the first L ED chip structure and the second L ED chip structure, and the second L ED chip structure is positioned on the side, facing away from the substrate, of the first L ED chip structure;
assembling the L ED chip structure onto the substrate;
and arranging a fluorescent film on the side of the L ED chip structure, which is far away from the substrate.
According to the technical scheme, the backlight module provided by the invention comprises a substrate and a plurality of L ED chip structures arranged in an array manner on the substrate, wherein the L ED chip structure comprises a first L ED chip structure and a second L ED chip structure which are arranged in a stacked manner, and a reflecting layer arranged between the first L ED chip structure and the second L ED chip structure, and the reflecting layer reflects light emitted by the first L ED chip structure between the substrate and the second L ED chip structure and deviates from the surface of the substrate, so that the light is emitted from the side surface of the first L ED chip structure.
On one hand, the light emitted by the first L ED chip structure and departing from the surface of the substrate is used as a reflection layer to compensate the lateral light emitting amount of the first L ED chip structure, so that the light emitting amount of the area between the adjacent L ED chip structures is increased, and the brightness of the area between the adjacent L ED chip structures is improved, on the other hand, as the L ED chip is additionally arranged, under the condition that the brightness of the L ED chip structures and departing from the surface of the substrate is not changed, compared with an L ED chip structure, an L ED chip structure is newly added, the lateral light emitting amount of the L ED chip structures is also increased, and the light emitting amount of the area between the adjacent L ED chip structures is also increased, so that the brightness of the area between the adjacent chip structures is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic top view of a display device provided in the prior art;
FIG. 2 is a cross-sectional view of the backlight module taken along line AA' of FIG. 1;
fig. 3 is a schematic cross-sectional view of a backlight module according to an embodiment of the invention;
fig. 4 is a schematic structural diagram of an L ED chip structure according to an embodiment of the present invention;
FIG. 5 is a schematic view of another backlight module according to an embodiment of the present invention;
fig. 6 is a schematic diagram illustrating an L ED chip structure electrically connected to a substrate according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of a gold plating line according to an embodiment of the present invention for realizing parallel connection;
fig. 8 is a schematic structural diagram of a conductive layer according to an embodiment of the present invention;
fig. 9 is a schematic diagram of an L ED chip structure according to an embodiment of the present invention;
FIG. 10 is a schematic flow chart illustrating a method for manufacturing a backlight module according to an embodiment of the present invention;
fig. 11 is a schematic structural diagram illustrating an L ED chip structure assembled on a substrate according to an embodiment of the present invention;
fig. 12 is a schematic structural diagram of a display device according to an embodiment of the present invention;
fig. 13 is a cross-sectional view taken along line BB' in fig. 12.
Detailed Description
As described in the background section, the backlight module formed by Mini L ED in the prior art is prone to have a starry bad phenomenon during the display process.
The inventors found that the above phenomenon occurs because:
please refer to fig. 1, fig. 1 is a schematic top view structure diagram of a display device provided by the prior art, in the display device 100, a certain distance exists between adjacent L ED chips 02, for example, a first distance W exists between two adjacent L ED chips 02 in the X direction, and a second distance L exists between two adjacent L ED chips 02 in the Y direction, fig. 2 is a schematic cross-sectional view of the backlight module along the line AA' in fig. 1, wherein the L ED backlight module includes a PCB board 01, a plurality of L ED chips 02 are disposed on the PCB board 01, and a plurality of fluorescent films 03 and L ED chips 02 are disposed on L ED chips 02, wherein the light emitting directions of the two adjacent L ED chips are mainly deviated from the PCB board 01, and the light emitting directions of the two side light is small, and no light is emitted in the L ED backlight module, so that the area between the two adjacent L ED chips has a dark brightness, and the backlight module has a full brightness, namely, a full brightness, a non-gray display area corresponding to a full brightness, and a full brightness, corresponding to a white light spot, and a full brightness, and a full brightness, corresponding to a full brightness, low display panel, and a full brightness, corresponding to two adjacent 464.
Accordingly, the present invention provides a backlight module, comprising:
a substrate;
a plurality of L ED chip structures arranged in an array on one side of the substrate;
and a phosphor film on a side of the L ED chip structure facing away from the substrate;
the L ED chip structure comprises a first L ED chip structure and a second L ED chip structure which are arranged in a stacked mode, and a reflecting layer located between the first L ED chip structure and the second L ED chip structure, wherein the second L ED chip structure is located on the side, facing away from the substrate, of the first L ED chip structure;
light emitted by the first L ED chip structure is reflected by the reflective layer and exits the sides of the first L ED chip structure;
light emitted by the second L ED chip structure exits from a surface facing away from the substrate and a side of the second L ED chip structure.
The invention provides a backlight module, which comprises a substrate and a plurality of L ED chip structures arranged in an array manner on the substrate, wherein the L ED chip structure comprises a first L ED chip structure and a second L ED chip structure which are arranged in a stacked manner, and a reflecting layer is arranged between the first L ED chip structure and the second L ED chip structure, and the reflecting layer reflects light emitted by the first L ED chip structure between the substrate and the second L ED chip structure and deviates from the surface of the substrate, so that the light is emitted from the side surface of the first L ED chip structure.
On one hand, the light emitted by the first L ED chip structure and departing from the surface of the substrate is used as a reflection layer to compensate the lateral light emitting amount of the first L ED chip structure, so that the light emitting amount of the area between the adjacent L ED chip structures is increased, and the brightness of the area between the adjacent L ED chip structures is improved, on the other hand, as the L ED chip is additionally arranged, under the condition that the brightness of the L ED chip structures and departing from the surface of the substrate is not changed, compared with an L ED chip structure, an L ED chip structure is newly added, the lateral light emitting amount of the L ED chip structures is also increased, and the light emitting amount of the area between the adjacent L ED chip structures is also increased, so that the brightness of the area between the adjacent chip structures is improved.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 3, fig. 3 is a backlight module according to an embodiment of the present invention, which includes a substrate 1, a plurality of L ED chip structures 2 arranged in an array on a side of the substrate 1, and a phosphor film 3 on a side of the L ED chip structures 2 facing away from the substrate 1, wherein the L0 ED chip structures 2 include a first L1 ED chip structure 21 and a second L2 ED chip structure 22 stacked on top of each other, and a reflective layer 23 between the first L ED chip structure 21 and the second L ED chip structure 22, the second L ED chip structure 22 is located on a side of the first L ED chip structure 21 facing away from the substrate 1, light emitted from the first L ED chip structure 21 is reflected by the reflective layer 23 and exits from a side of the first L ED chip structure 21, and light emitted from the second L ED chip structure 22 exits from a surface facing away from the substrate 1 and a side of the second L ED chip structure 22.
With the development of L ED technology, a Mini L ED chip is directly fabricated on the substrate 1 to form a backlight module, and a local dimming technology is used to achieve a high dynamic range screen effect and to make the picture finer and finer, so in one embodiment of the present invention, the L ED chip structure is a Mini L ED chip structure.
It should be noted that, L ED chip structures arranged in an array on the substrate may generate a problem that luminance at a position of the L ED chip structure is relatively large and luminance of an area between adjacent L ED chip structures is relatively small as long as a space is provided between L ED chip structures, so that the backlight module provided in this embodiment is not limited to the backlight module formed by the Mini L ED chip structure, and a direct-type backlight module formed by other size L ED chip structures may also adopt the backlight module provided in the embodiment of the present invention to improve uneven light emission of the backlight module.
In the embodiment of the present invention, specific structures of the first L ED chip structure 21 and the second L ED chip structure 22 are not limited, and any L ED chip structure may be used as long as two L ED chip structures are stacked, and the light brightness of light emitted from the substrate is guaranteed to be the same as that of the original L ED chip structure, and the light emission amount in the lateral direction is increased.
In other embodiments of the present invention, a buffer layer may be further included between the transparent substrate and the first type semiconductor layer, and a current spreading layer may be further included on a surface of the second type semiconductor layer facing away from the active layer, so as to spread a current of the L ED chip structure, and in this embodiment, the other structures further included in the L ED chip structure are not limited.
In the present embodiment, the structures of each specific layer in the first L ED chip structure and the second L ED chip structure are not limited, and in an embodiment of the present invention, referring to fig. 4, fig. 4 is a schematic diagram of a specific structure of a L ED chip structure provided in the embodiment of the present invention, in the L ED chip structure, the first L ED chip structure 21 sequentially includes, along a direction away from the substrate 1, a first type semiconductor layer 214, an active layer 213, a second type semiconductor layer 212, and a transparent substrate 211, and the second L ED chip structure 22 sequentially includes, along a direction away from the substrate 1, a transparent substrate 221, a second type semiconductor layer 222, an active layer 223, and a first type semiconductor layer 224.
In this embodiment, the specific types of the first type semiconductor layers (214 and 224) and the second type semiconductor layers (212 and 222) are not limited, and the doping type of the first type semiconductor layers (214 and 224) is opposite to that of the second type semiconductor layers (212 and 222) to form a PN junction, and the first type semiconductor layers (214 and 224) may be P type semiconductor layers; correspondingly, the second-type semiconductor layers (212 and 222) are N-type semiconductor layers. The first type semiconductor layers (214 and 224) may also be N-type semiconductor layers, and correspondingly, the second type semiconductor layers (212 and 222) are P-type semiconductor layers.
In addition, the light emitting color of the L ED chip structure is not limited in this embodiment, it should be noted that light mixing of multiple colors is avoided, and higher requirements are placed on the subsequent fluorescent film.
In an embodiment of the present invention, the semiconductor layers in the first L ED chip structure 21 and the second L ED chip structure 22 are made of gan, so that the light emitted by the L ED chip structure is blue light, at this time, the corresponding fluorescent film in this embodiment is a fluorescent film capable of absorbing blue light and emitting red light and green light, and after the blue light, the red light and the green light are mixed, the backlight module emits white light.
Referring to fig. 3, the phosphor film 3 is disposed on the light-emitting side of the L ED chip structure 2, in this embodiment, the light-emitting side includes light in a direction away from the surface of the substrate 1 and also includes lateral light, the phosphor film 3 may be a whole layer of film material disposed on the side of the L ED chip structure 2 away from the substrate 1, in other embodiments of the present invention, the phosphor film may also be a film structure formed by spraying phosphor powder, and at this time, the phosphor film covers the surface of the L ED chip structure, including the surface away from the substrate 1 and each side intersecting the substrate 1, specifically, refer to fig. 5, and fig. 5 is another structural schematic diagram of the backlight module provided in the embodiments of the present invention.
It should be noted that, in this embodiment, the substrate 1 is provided with a circuit structure, and can provide a power supply for the first L ED chip structure 21 and the second L ED chip structure 22 connected thereto, in this embodiment, the substrate 1 may be a PCB or an FPC, the L ED chip structure 2 may be a cuboid or a cube, or a similar cuboid or a cube, wherein a surface of the second L ED chip structure 22 facing away from the substrate 1 is used as a light exit surface of the L ED chip facing away from the substrate 1, and each side surface of the first L ED chip structure 21 and the second L ED chip structure 22 is a lateral light exit surface.
The first L ED chip structure 21 and the second L ED chip structure 22 are electrically connected to a circuit on the substrate 1, the embodiment does not limit the specific manner in which the first L ED chip structure 21 and the second L ED chip structure 22 are electrically connected to the substrate 1, in an embodiment of the present invention, the first type semiconductor layer and the second type semiconductor layer of the first L ED chip structure 21 are positively electrically connected to the substrate 1 by using gold wires, or the first L ED chip structure 21 is electrically connected to the substrate 1 by using metal pads, that is, see fig. 3, wherein the first L ED chip structure 21 is electrically connected to the substrate 1 by using first pads 41 and second pads 42, specifically, see fig. 6, which is a structural diagram of the embodiment of the present invention for electrically connecting the L ED chip structure to the substrate, the first type semiconductor layer 214 of the first L ED chip structure 21 is connected to the first pads 41, the second type semiconductor layer 212 of the first L ED chip structure 21 is connected to the second type semiconductor layer 42, the heat dissipation structure may be flip-mounted on the substrate 21 by using gold wires, which may prevent the heat dissipation of the heat dissipation structure 21 from occurring in the heat dissipation structure, and may reduce the lifetime of the heat dissipation structure used for flip chip, and may be used for flip chip structures.
Similarly, the second L ED chip structure 22 is also provided with a first bonding terminal 43 and a second bonding terminal 44 electrically connected to the substrate 1 for electrically connecting the second L ED chip structure 22 to the substrate.
In this embodiment, the connection manner between the second type semiconductor layer 212 and the second bonding pad 42 of the first L ED chip structure 21 is not limited, and as shown in fig. 6, an insulating layer 45 is disposed between the second bonding pad 42 and the first type semiconductor layer 214 of the first L ED chip structure 21 to prevent the two from being electrically connected, and then the connection between the second type semiconductor layer 212 and the second bonding pad 42 of the first L ED chip structure 21 is realized by digging a hole 46 in the active layer 213 of the first L ED chip structure 21 and the first type semiconductor layer 214 of the first L ED chip structure 21, forming an insulating layer on a sidewall of the hole 46, and filling the hole 46 with a conductive medium.
It should be noted that the second L ED chip structure 22 is also electrically connected to the substrate 1, the present embodiment also does not limit the way of electrically connecting the second L ED chip structure 22 to the substrate 1, and may also be electrically connected to the first pad 41 and the second pad 42 of the first L ED chip structure 21 in a gold wire manner or a conductive layer manner, so as to achieve parallel connection of the two, so that the first L ED chip structure 21 and the second L ED chip structure 22 can be simultaneously controlled, as shown in fig. 7, fig. 7 is a structural diagram of a gold wire implemented in parallel connection according to an embodiment of the present invention, the first pad 41 of the first L ED chip structure 21 is electrically connected to the first bonding terminal 43 of the second 634 ED chip structure 22 by a gold wire 51, the second pad 42 of the first L ED chip structure 21 is electrically connected to the second bonding terminal 44 of the second L ED chip structure 22 by a gold wire 52, the first conductive layer 52 is electrically connected to the second pad 44 of the second L ED chip structure 21 and the second pad 42 of the second L ED chip structure 22 by a buffer layer 52, and the first conductive layer 3853 is not connected to the first conductive layer structure 22, as shown in fig. 8, the first conductive layer 3853 is illustrated when the first conductive layer structure is electrically connected to the first ED chip structure, the first ED chip structure 22 and the second ED chip structure 22 is electrically connected to the ED chip structure 22, the first chip structure is electrically connected to the first chip structure 3853.
As shown in fig. 3 to 6, the L ED chip structure provided in the embodiment of the present invention further includes a reflective layer 23 located between the first L ED chip structure 21 and the second L ED chip structure 22, in this embodiment, specific materials of the reflective layer 23 are not limited, in the embodiment of the present invention, the reflective layer 23 may be made of metal, and in order to improve reflection efficiency, silver metal may be used to form the reflective layer 23, in the embodiment, fixing modes between the reflective layer 23 and the first L ED chip structure 21 and the second L ED chip structure 22 are not limited, the reflective layer may be formed by a plating process, or may be fixed by an adhesive, in this embodiment, specific materials of the adhesive are not limited, and the adhesive may be a solid crystal adhesive.
The invention provides a backlight module, which comprises a substrate and a plurality of L ED chip structures arranged in an array manner on the substrate, wherein the L ED chip structure comprises a first L ED chip structure and a second L ED chip structure which are arranged in a stacked manner, and a reflecting layer is arranged between the first L ED chip structure and the second L ED chip structure, and the reflecting layer reflects light emitted by the first L ED chip structure between the substrate and the second L ED chip structure and deviates from the surface of the substrate, so that the light is emitted from the side surface of the first L ED chip structure.
On one hand, the light emitted by the first L ED chip structure and departing from the surface of the substrate is used as a reflection layer to compensate the lateral light emitting amount of the first L ED chip structure, so that the light emitting amount of the area between the adjacent L ED chip structures is increased, and the brightness of the area between the adjacent L ED chip structures is improved, on the other hand, as the L ED chip is additionally arranged, under the condition that the brightness of the L ED chip structures and departing from the surface of the substrate is not changed, compared with an L ED chip structure, an L ED chip structure is newly added, the lateral light emitting amount of the L ED chip structures is also increased, and the light emitting amount of the area between the adjacent L ED chip structures is also increased, so that the brightness of the area between the adjacent chip structures is improved.
Based on the same inventive concept, an embodiment of the present invention further provides a method for manufacturing a backlight module, which is used to form the backlight module provided in the above embodiment, please refer to fig. 10, where fig. 10 is a schematic flow chart of the method for manufacturing the backlight module provided in the embodiment of the present invention, and the method for manufacturing the backlight module includes:
s101, providing L ED chip structures and a substrate, wherein the L ED chip structure comprises a first L ED chip structure, a second L ED chip structure and a reflecting layer, wherein the first 3526 ED chip structure and the second L ED chip structure are arranged in a stacked mode, the reflecting layer is located between the first L ED chip structure and the second L ED chip structure, and the second L ED chip structure is located on the side, away from the substrate, of the first L ED chip structure;
in this embodiment, the specific method for providing the L ED chip structure is not limited, and the method for providing the L ED chip structure may include the following steps:
providing a first transparent substrate, a second transparent substrate and a reflective layer;
growing a second type semiconductor layer, an active layer and a first type semiconductor layer on a first transparent substrate in sequence to form a first L ED chip structure;
sequentially growing a second type semiconductor layer, an active layer and a first type semiconductor layer on a second transparent substrate, and etching the first type semiconductor layer and the active layer on the second transparent substrate to form a second L ED chip structure;
the reflective layer is fixed between the first transparent substrate and the second transparent substrate.
It should be noted that, in this embodiment, a specific process for fixing the reflective layer between the first transparent substrate and the second transparent substrate is not limited, and may include:
fixing the reflecting layer on one side of the first transparent substrate by using adhesive;
and adopting adhesive to fix the surface of the reflecting layer departing from the first transparent substrate on one side of the second transparent substrate.
In other embodiments, the reflective layer may be formed by evaporation on the first transparent substrate and then fixed to the second transparent substrate by an adhesive. This is not limited in this embodiment.
The above is only a manufacturing method of the L ED chip structure provided in the embodiment of the present invention, and other steps may be included in other implementations of the present invention, which are not described in detail in this embodiment
S102, assembling the L ED chip structure on a substrate;
the L ED chip structure is assembled on the substrate, the first L ED chip structure can be installed positively, the first L ED chip structure can be inverted, the first L ED chip structure is inverted on the substrate through the first bonding pad and the second bonding pad in the embodiment, then the second L ED chip structure is electrically connected with the first bonding pad and the second bonding pad through gold wire bonding or a conductive layer arrangement mode, and the first L ED chip structure and the second L ED chip structure are connected in parallel, so that power control on the substrate is received.
Referring to fig. 11, fig. 11 is a schematic structural view illustrating a structure of flip-chip mounting an L ED chip structure 2 on a substrate 1 through a solder paste 4 according to an embodiment of the present invention.
And S103, arranging a fluorescent film on the side, away from the substrate, of the L ED chip structure.
The phosphor layer may be formed by fixing phosphor powder by spraying or film pressing, and the entire phosphor layer may be disposed on the side of the L ED chip structure away from the substrate, which is not limited in this embodiment.
The embodiment of the invention provides a backlight module manufacturing method, which is used for forming the backlight module in the embodiment to obtain the backlight module with weak or no babysbreath bad phenomenon.
Referring to fig. 12 and 13, fig. 12 is a schematic structural view of a display device according to an embodiment of the present invention, fig. 13 is a cross-sectional view BB' of fig. 12, and the display device 200 according to the present embodiment includes a backlight module 201 according to the above embodiment, and further includes a liquid crystal display panel 202, where the liquid crystal display panel 202 is located at one side, specifically, a light exit side, of the backlight module 201, and a plurality of L ED chip structures of the backlight module are located between the liquid crystal display panel and a substrate.
It should be noted that, in this embodiment, the display device may be any product or component having a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, a 3D printing system, and the like.
Because the emergent light of backlight unit is more even, has weakened the bad phenomenon of the starry sky that backlight unit appears or can eliminate the bad phenomenon of the starry sky, consequently, when the display device that provides in this embodiment shows the picture, picture quality is better.
It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in an article or device that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (13)
1. A backlight module, comprising:
a substrate;
a plurality of L ED chip structures arranged in an array on one side of the substrate;
and a phosphor film on the light-emitting side of the L ED chip structure, the phosphor film covering the surface of the L ED chip structure facing away from the substrate and the sides intersecting the substrate;
the L ED chip structure comprises a first L ED chip structure and a second L ED chip structure which are arranged in a stacked mode, and a reflecting layer located between the first L ED chip structure and the second L ED chip structure, wherein the second L ED chip structure is located on the side, facing away from the substrate, of the first L ED chip structure;
light emitted by the first L ED chip structure is reflected by the reflective layer and exits the sides of the first L ED chip structure;
light emitted by the second L ED chip structure exits from a surface facing away from the substrate and a side of the second L ED chip structure.
2. The backlight module of claim 1, wherein the first L ED chip structure and the second L ED chip structure each comprise at least a transparent substrate, a first type semiconductor layer, an active layer, and a second type semiconductor layer.
3. The backlight module as claimed in claim 2, wherein the first L ED chip structure comprises, in order in a direction away from the substrate, the first type semiconductor layer, the active layer, the second type semiconductor layer and the transparent substrate;
the second L ED chip structure sequentially comprises the transparent substrate, the second type semiconductor layer, the active layer and the first type semiconductor layer along the direction departing from the substrate.
4. A backlight module according to claim 3, wherein the first L ED chip structure is electrically connected to the substrate via first and second bonding pads;
the first type semiconductor layer of the first L ED chip structure is connected with the first bonding pad;
the second type semiconductor layer of the first L ED chip structure is connected with the second bonding pad.
5. The backlight module as claimed in claim 3, wherein the first type semiconductor layer is a P-type semiconductor layer; the second type semiconductor layer is an N type semiconductor layer.
6. The backlight module according to claim 5, wherein the P-type semiconductor layer is a P-type GaN layer, and the N-type semiconductor layer is an N-type GaN layer.
7. The backlight module as claimed in claim 1, wherein the reflective layer is made of metal.
8. A display device, comprising: a backlight module according to any of claims 1 to 7.
9. The display device according to claim 8, further comprising a liquid crystal display panel disposed on one side of the backlight module, wherein the L ED chip structures of the backlight module are disposed between the liquid crystal display panel and the substrate.
10. A method for manufacturing a backlight module, for forming the backlight module of any one of claims 1-7, the method comprising:
providing L ED chip structures and a substrate, wherein the L ED chip structure comprises a first L ED chip structure and a second L ED chip structure which are arranged in a stacked manner, and a reflecting layer positioned between the first L ED chip structure and the second L ED chip structure, and the second L ED chip structure is positioned on the side, facing away from the substrate, of the first L ED chip structure;
assembling the L ED chip structure onto the substrate;
and arranging a fluorescent film on the side of the L ED chip structure, which is far away from the substrate.
11. The method as claimed in claim 10, wherein the step of forming the substrate comprises the steps of,
and fixing the fluorescent powder by adopting a spraying or film pressing mode to form the fluorescent film.
12. The method as claimed in claim 10, wherein the step of forming the substrate comprises the steps of,
the L ED chip structure is provided, which specifically comprises:
providing a first transparent substrate, a second transparent substrate and a reflective layer;
growing a second type semiconductor layer, an active layer and a first type semiconductor layer on the first transparent substrate in sequence to form a first L ED chip structure;
growing the second type semiconductor layer, the active layer and the first type semiconductor layer on the second transparent substrate in sequence, and etching the first type semiconductor layer and the active layer on the second transparent substrate to form the second L ED chip structure;
the reflective layer is secured between the first transparent substrate and the second transparent substrate.
13. The method of claim 12, wherein the step of forming the substrate comprises the steps of,
the fixing the reflection layer between the first transparent substrate and the second transparent substrate specifically includes:
fixing a reflecting layer on one side of the first transparent substrate by adopting adhesive;
and fixing the surface of the reflecting layer departing from the first transparent substrate on one side of the second transparent substrate by adopting the viscose.
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