CN109326585A - A kind of backlight module and preparation method thereof, display device - Google Patents
A kind of backlight module and preparation method thereof, display device Download PDFInfo
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- CN109326585A CN109326585A CN201811159003.4A CN201811159003A CN109326585A CN 109326585 A CN109326585 A CN 109326585A CN 201811159003 A CN201811159003 A CN 201811159003A CN 109326585 A CN109326585 A CN 109326585A
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 6
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- 229910052751 metal Inorganic materials 0.000 claims description 3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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Abstract
The application provides a kind of backlight module and preparation method thereof, display device, backlight module, the multiple LED chip structures being arranged in array including substrate, on substrate, LED chip structure includes the first LED chip structure and the second LED chip structure being stacked, and positioned at reflecting layer between the two, the light away from substrate surface that the first LED chip structure between substrate and the second LED chip structure issues is reflected in the reflecting layer, to be emitted from the side of the first LED chip structure.On the one hand, the positive light of the first LED chip structure is compensated its lateral amount of light by reflecting layer；On the other hand, it increases a LED chip structure newly, in the case where the brightness for guaranteeing that LED chip structure front is emitted is constant, also increases the lateral amount of light of LED chip structure.Weaken babysbreath bad phenomenon in terms of two above, or even thoroughly eliminates babysbreath bad phenomenon.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of backlight module and preparation method thereof, display device.
Background technique
As LED (Light-Emitting Diode, light emitting diode) technology develops, apply in backlight module
LED light Source size is smaller and smaller, occurs using Mini LED as the light source in backlight module gradually, Mini LED is referred to as
The predecessor of Micro LED (Micro Light Emitting Diode, micro- light emitting diode), size is about 50 microns~60 micro-
Rice.
Mini LED is a new and developing branch of current display screen.The office of down straight aphototropism mode set can be realized by the technology
Portion dims (Local Dimming) design, reaches the effect screen (HDR) of high dynamic range, keeps picture more fine and smooth.Meanwhile
High light area light source, Lifting Modules group brightness are provided.Local dimming designs the power consumption that can also reduce backlight module.
But to be easy to appear babysbreath during display bad for the backlight module that is formed of Mini LED in the prior art
Phenomenon, the i.e. brightness of LED chip corresponding position are higher, and the phenomenon that the brightness between adjacent LED chip is lower.
Summary of the invention
In view of this, the present invention provides a kind of backlight module and preparation method thereof, display device, to solve in the prior art
The problem of babysbreath bad phenomenon that backlight module occurs during display.
To achieve the above object, the invention provides the following technical scheme:
A kind of backlight module, comprising:
Substrate；
The multiple LED chip structures being arranged in array positioned at the substrate side；
And deviate from the fluorescent film of the substrate side positioned at the LED chip structure；
The LED chip structure includes: the first LED chip structure and the second LED chip structure being stacked, Yi Jiwei
Reflecting layer between first LED chip structure and second LED chip structure, second LED chip structure position
Deviate from the side of the substrate in first LED chip structure；
The light of first LED chip structure transmitting is reflected by the reflecting layer, and from first LED chip structure
Side outgoing；
The light of second LED chip structure transmitting from away from the substrate surface and the second LED chip knot
The side of structure is emitted.
The present invention also provides a kind of display devices, comprising: backlight module recited above.
The present invention also provides a kind of production methods of backlight module, which is characterized in that is used to form backlight recited above
The production method of mould group, the backlight module includes:
LED chip structure and substrate be provided, the LED chip structure include: the first LED chip structure being stacked and
Second LED chip structure, and the reflecting layer between first LED chip structure and second LED chip structure,
Second LED chip structure is located at the side that first LED chip structure deviates from the substrate；
The LED chip structure is assembled on the substrate；
Fluorescent film is set away from the substrate side in the LED chip structure.
It can be seen via above technical scheme that backlight module provided by the invention, including substrate, on substrate is in battle array
Multiple LED chip structures of arrangement are arranged, heretofore described LED chip structure includes the first LED chip structure being stacked
With the second LED chip structure, and positioned at reflecting layer between the two, the reflecting layer will be located at substrate and the second LED chip
The light away from substrate surface that the first LED chip structure between structure issues is reflected, thus from the first LED chip structure
Side outgoing.
On the one hand, it is used as the first LED of compensation with the light away from substrate surface that reflecting layer issues the first LED chip structure
The lateral amount of light of chip structure, increases the amount of light in region between adjacent LED chip structure, to improve adjacent LED
The brightness in region between chip structure；On the other hand, a LED chip is set due to increasing, is guaranteeing LED chip structure back
In the case where constant from the brightness that substrate surface is emitted, for a LED chip structure, a LED chip is increased newly
Structure equally increases the lateral amount of light of LED chip structure, can also increase going out for region between adjacent LED chip structure
Light quantity, to improve the brightness in region between adjacent chips structure.Two aspect Overlays are that LED chip structure deviates from
The amount of light of substrate surface is constant, and therefore lateral light relative increase can weaken babysbreath bad phenomenon or even LED chip
When brightness between the brightness of locations of structures and adjacent LED chip structure is identical or can not be distinguished, then can thoroughly it eliminate
Babysbreath bad phenomenon.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of display device overlooking structure diagram that the prior art provides；
Fig. 2 is the diagrammatic cross-section of the backlight module of AA ' line along Fig. 1；
Fig. 3 is a kind of backlight module the schematic diagram of the section structure provided in an embodiment of the present invention；
Fig. 4 is a kind of concrete structure schematic diagram of the LED chip structure provided in the embodiment of the present invention；
Fig. 5 is another back light module unit structure schematic diagram provided in an embodiment of the present invention；
Fig. 6 is a kind of structural schematic diagram being electrically connected to LED chip structure on substrate provided in an embodiment of the present invention；
Fig. 7 is that a kind of gold thread of beating provided in an embodiment of the present invention realizes structural schematic diagram in parallel；
Fig. 8 is that a kind of conductive layer provided in an embodiment of the present invention realizes structural schematic diagram in parallel；
Fig. 9 is a kind of LED chip structure schematic diagram provided in an embodiment of the present invention；
Figure 10 is manufacturing backlight module method flow schematic diagram provided in an embodiment of the present invention；
Figure 11 is a kind of structural schematic diagram being assembled to LED chip structure on substrate provided in an embodiment of the present invention；
Figure 12 is a kind of display device structure schematic diagram provided in an embodiment of the present invention；
Figure 13 is the sectional view along BB ' line in Figure 12.
Specific embodiment
Just as described in the background section, the backlight module that Mini LED is formed in the prior art is easy during display
There is babysbreath bad phenomenon.
Inventor has found the reason of above-mentioned phenomenon occur are as follows:
Referring to Figure 1, Fig. 1 is a kind of display device overlooking structure diagram that the prior art provides；Display device 100
In, there can be certain spacing between adjacent LED chip 02, as having the between two adjacent LEDs chip 02 in the X direction
One spacing W, and there is between two adjacent LEDs chip 02 second spacing L in the Y direction.Fig. 2 is referred to, Fig. 2 is along Fig. 1
The diagrammatic cross-section of the backlight module of middle AA ' line；Wherein, if LED backlight mould group includes pcb board 01, is provided on pcb board 01
Dry LED chip 02 is provided with fluorescent film 03 on LED chip 02, and the light emission direction of LED chip 02 mainly deviates from pcb board 01,
It is less laterally to go out light.When LED in backlight module shines, since lateral light is less, and due to no hair in above-mentioned two spacing
Body of light, therefore the region between two adjacent LEDs chip will appear the partially dark phenomenon of brightness, to will lead to backlight module presentation
Babysbreath bad phenomenon, i.e., the brightness of LED chip corresponding position is higher, and the regional luminance between two adjacent LEDs chip is lower
The phenomenon that, the babysbreath phenomenon of brightness unevenness is also presented in the picture for showing display panel.
Based on this, the present invention provides a kind of backlight module, comprising:
Substrate；
The multiple LED chip structures being arranged in array positioned at the substrate side；
And deviate from the fluorescent film of the substrate side positioned at the LED chip structure；
The LED chip structure includes: the first LED chip structure and the second LED chip structure being stacked, Yi Jiwei
Reflecting layer between first LED chip structure and second LED chip structure, second LED chip structure position
Deviate from the side of the substrate in first LED chip structure；
The light of first LED chip structure transmitting is reflected by the reflecting layer, and from first LED chip structure
Side outgoing；
The light of second LED chip structure transmitting from away from the substrate surface and the second LED chip knot
The side of structure is emitted.
Backlight module provided by the invention, the multiple LED chip knots being arranged in array including substrate, on substrate
Structure, heretofore described LED chip structure include the first LED chip structure and the second LED chip structure being stacked, and
Positioned at reflecting layer between the two, the reflecting layer is by the first LED chip knot between substrate and the second LED chip structure
The light away from substrate surface that structure issues is reflected, to be emitted from the side of the first LED chip structure.
On the one hand, it is used as the first LED of compensation with the light away from substrate surface that reflecting layer issues the first LED chip structure
The lateral amount of light of chip structure, increases the amount of light in region between adjacent LED chip structure, to improve adjacent LED
The brightness in region between chip structure；On the other hand, a LED chip is set due to increasing, is guaranteeing LED chip structure back
In the case where constant from the brightness that substrate surface is emitted, for a LED chip structure, a LED chip is increased newly
Structure equally increases the lateral amount of light of LED chip structure, can also increase going out for region between adjacent LED chip structure
Light quantity, to improve the brightness in region between adjacent chips structure.Two aspect Overlays are that LED chip structure deviates from
The amount of light of substrate surface is constant, and therefore lateral light relative increase can weaken babysbreath bad phenomenon or even LED chip
When brightness between the brightness of locations of structures and adjacent LED chip structure is identical or can not be distinguished, then can thoroughly it eliminate
Babysbreath bad phenomenon.
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Fig. 3 is referred to, Fig. 3 is a kind of backlight module provided in an embodiment of the present invention, comprising: substrate 1；Positioned at substrate 1 one
Multiple LED chip structures 2 that side is arranged in array；And deviate from the fluorescent film 3 of 1 side of substrate positioned at LED chip structure 2；LED
Chip structure 2 includes: the first LED chip structure 21 and the second LED chip structure 22 being stacked, and is located at the first LED
Reflecting layer 23 between chip structure 21 and the second LED chip structure 22, the second LED chip structure 22 are located at the first LED chip
Structure 21 deviates from the side of substrate 1；The light of first LED chip structure 21 transmitting is reflected by reflecting layer 23, and from the first LED chip
The side of structure 21 is emitted；Second LED chip structure 22 transmitting light from away from substrate 1 surface and the second LED chip knot
The side of structure 22 is emitted.
As LED technology develops, is directly made of Mini LED chip form backlight module on substrate 1 at present, and
By local dimming technology, reach the effect screen of high dynamic range, so that picture is finer and smoother, therefore, of the invention one
In a embodiment, the LED chip structure is Mini LED chip structure.
It should be noted that the LED chip structure being arranged in array on substrate, as long as having between LED chip structure
Spacing, there may be the brightness at LED chip structure position is larger, and the regional luminance between adjacent LED chip structure compared with
Small problem, therefore, the backlight module provided in the present embodiment are not limited only to the backlight formed by Mini LED chip structure
The down straight aphototropism mode set of mould group, other sizes LED chip structure composition can also use backlight provided in an embodiment of the present invention
The problem of mould group is to improve backlight module non-uniform light.For example, the common LED chip that size ratio Mini LED chip structure is big
Structure or size ratio MiniLED chip structure small Micro LED chip structure do not limit this in the present embodiment.
The specific structure of the first LED chip structure 21 and the second LED chip structure 22 is not limited in the embodiment of the present invention
It is fixed, as long as two LED chip structures being stacked, and can be realized the brightness and original one guaranteed away from substrate outgoing
The brightness away from substrate outgoing of a LED chip structure is identical, and the increased LED chip structure of lateral amount of light,
In one embodiment of the present of invention, the first LED chip structure and the second LED chip structure are the LED chip encapsulated before completing
Structure.
LED chip structure before encapsulation is completed includes at least transparent substrates, the first type semiconductor layer, active layer and second type
Semiconductor layer.That is, the first LED chip structure and the second LED chip structure include at least transparent substrates, the first type semiconductor
Layer, active layer and the second type semiconductor layer.In other embodiments of the present invention, between transparent substrates and the first type semiconductor layer also
It may include buffer layer, the second type semiconductor layer can also include current extending away from the surface of active layer, be used for LED core
The electric current of chip architecture is extended, in the present embodiment without limitation to other structures also included in LED chip structure.
Each layer of structure specific in the first LED chip structure and the second LED chip structure is not limited in the present embodiment
It is fixed, in an embodiment of the invention, Fig. 4 is referred to, Fig. 4 is a kind of LED chip structure provided in the embodiment of the present invention
Concrete structure schematic diagram；In LED chip structure, the first LED chip structure 21 successively includes: first along the direction away from substrate 1
Type semiconductor layer 214, active layer 213, the second type semiconductor layer 212 and transparent substrates 211；Second LED chip structure 22 is along back
Direction from substrate 1 successively includes: transparent substrates 221, the second type semiconductor layer 222, active layer 223 and the first type semiconductor layer
224。
The first type semiconductor layer (214 and 224) and the second type semiconductor layer (212 Hes are not limited in the present embodiment equally
222) concrete type, the doping type of the first type semiconductor layer (214 and 224) and the second type semiconductor layer (212 and 222)
Doping type is capable of forming PN junction on the contrary, and the first type semiconductor layer (214 and 224) can be p type semiconductor layer；It is corresponding
, the second type semiconductor layer (212 and 222) is n type semiconductor layer.First type semiconductor layer (214 and 224) can also be N-type
Semiconductor layer, corresponding, the second type semiconductor layer (212 and 222) is p type semiconductor layer.
In addition, the luminescent color of LED chip structure is not limited in the present embodiment, it should be noted that avoid the occurrence of a variety of
Color light mixing is arranged subsequent fluorescent film and proposes requirements at the higher level.First LED chip structure 21 and the second LED core in the present embodiment
The material that chip architecture 22 uses is identical, so that the color of the light issued is identical.To 21 He of the first LED chip structure in the present embodiment
The material of semiconductor layer in second LED chip structure 22 without limitation, can depending on LED chip structure luminescent color,
Can be with gallium nitride, GaAs or gallium phosphide material, or can also be quaternary system LED material, it can be sending in the present embodiment
The gallium nitride material of blue light namely p type semiconductor layer described above are p-type gallium nitride layer, and n type semiconductor layer is N-type nitridation
Gallium layer.
In one embodiment of the invention, the semiconductor in the first LED chip structure 21 and the second LED chip structure 22
Layer material is gallium nitride material, so that the light that LED chip structure issues is blue light, at this point, fluorescence in corresponding the present embodiment
Film is the fluorescent film that feux rouges and green light are issued after capable of absorbing blue light, after blue light, feux rouges, green light are mixed, so that backlight module
Ejecting white light.
Fig. 3 is referred to, the light emission side of LED chip structure 2 is arranged in fluorescent film 3, and light emission side described in the present embodiment includes
It also include lateral light away from the light of 1 surface direction of substrate.Fluorescent film 3 can be flood membrane material, and setting is carried on the back in LED chip structure 2
Side from substrate 1, in other embodiments of the present invention, fluorescent film can also be the film layer structure formed by sprayed with fluorescent powder,
Fluorescent film covers LED chip structure surface at this time, including away from the surface of substrate 1 and each side intersected with substrate 1.Specifically
It may refer to Fig. 5, Fig. 5 is another back light module unit structure schematic diagram provided in an embodiment of the present invention.
It can be the first LED connected to it should be noted that being provided with circuit structure on substrate 1 in the present embodiment
Chip structure 21 and the second LED chip structure 22 provide power supply, and substrate 1 can be pcb board in the present embodiment, are also possible to FPC
Plate.LED chip structure 2 can be cuboid or square, or similar cuboid or square, wherein the second LED chip knot
Surface light-emitting surface away from substrate 1 emergent light as LED chip of the structure 22 away from substrate 1, the first LED chip structure 21 and the
The each side in the 22 of two LED chip structures is lateral light-emitting surface.
First LED chip structure 21 and the second LED chip structure 22 are electrically connected on the circuit on substrate 1, this implementation
The first LED chip structure 21 is not limited in example and the second LED chip structure 22 is electrically connected to concrete mode on substrate 1,
In one embodiment of the present of invention, can by beat gold thread mode by the first type semiconductor layer of the first LED chip structure 21 and
Second type semiconductor layer formal dress is electrically connected to substrate 1, or by the metal pad of setting, by the first LED chip structure 21
It is electrically connected to substrate 1；Namely refer to Fig. 3, wherein the first LED chip structure 21 passes through the first pad 41 and the second pad
42 are electrically connected on substrate 1；It specifically may refer to Fig. 6, Fig. 6 is provided in an embodiment of the present invention a kind of by LED chip structure
The structural schematic diagram being electrically connected on substrate；First type semiconductor layer 214 of the first LED chip structure 21 connects the first pad
41；Second type semiconductor layer 212 of the first LED chip structure 21 connects the second pad 42.Namely first LED chip structure 21 fall
On substrate 1,21 inverted structure of the first LED chip structure can save the use of gold thread, avoid gold dress relative to positive assembling structure
It is electrically connected between gold thread in line and adjacent LED chip structure.And inverted structure LED chip structure, it can pass through
Substrate radiates, so that heat sinking function is promoted by high current, the service life of chip gets a promotion；Inverted structure LED core simultaneously
Chip size can be accomplished smaller.
Likewise, being also equipped with the first welding ends 43 and second being electrically connected with substrate 1 in the second LED chip structure 22
Welding ends 44, for the second LED chip structure 22 to be electrically connected to substrate.
The second type semiconductor layer 212 of the first LED chip structure 21 and the company of the second pad 42 are not limited in the present embodiment
Mode is connect, can be as shown in Figure 6, between the first type semiconductor layer 214 of the second pad 42 and the first LED chip structure 21
Insulating layer 45 is set, avoids the two from being electrically connected, then passes through the active layer 213 and the first LED in the first LED chip structure 21
Borehole 46 in first type semiconductor layer 214 of chip structure 21, then the side wall formation insulating layer in hole 46, are then situated between using conductive
Matter fills hole 46, realizes the second type semiconductor layer 212 of the first LED chip structure 21 and the connection of the second pad 42.
It should be noted that the second LED chip structure 22 is also electrically connected between substrate 1, it is also unlimited in the present embodiment
The mode that fixed second LED chip structure 22 is electrically connected with substrate 1 again may be by beating gold thread mode or conductive layer be arranged
Etc. modes, be electrically connected with the first pad 41 of the first LED chip structure 21 and the second pad 42, realize both simultaneously
Connection, so that the first LED chip structure 21 and the second LED chip structure 22 can be controlled simultaneously.As shown in fig. 7, Fig. 7 is
A kind of gold thread of beating provided in an embodiment of the present invention realizes structural schematic diagram in parallel；By gold thread 51 by the first LED chip structure
21 the first pad 41 and the first welding ends 43 of the second LED chip structure 22 are electrically connected, by gold thread 52 by the first LED core
Second pad 42 of chip architecture 21 and the second welding ends 44 of the second LED chip structure 22 are electrically connected.As shown in figure 8, Fig. 8 is
A kind of conductive layer provided in an embodiment of the present invention realizes structural schematic diagram in parallel；By conductive layer 53 by the first LED chip knot
First pad 41 of structure 21 and the first welding ends 43 of the second LED chip structure 22 are electrically connected, by conductive layer 54 by first
Second pad 42 of LED chip structure 21 and the second welding ends 44 of the second LED chip structure 22 are electrically connected.It needs to illustrate
It is when forming conductive layer, to need to be initially formed buffer layer and avoid conductive layer (53 and 54) and the first LED chip structure 21 and second
Other structures layer electrical connection in LED chip structure 22.
As seen in figures 3-6, the LED chip structure provided in the embodiment of the present invention further includes being located at the first LED chip structure
21 and the second reflecting layer 23 between LED chip structure 22, the specific material in reflecting layer 23 is not limited in the present embodiment, in this hair
In bright embodiment, the material in reflecting layer 23 can be metal.In order to improve reflection efficiency, can be formed using metallic silver.This reality
The fixed form not limited between reflecting layer 23 and the first LED chip structure 21 and the second LED chip structure 22 in example is applied, it can be with
It is formed, can also be fixed by viscose by coating process, do not limit the specific material of viscose in the present embodiment, can be die bond
Glue.Shown in Figure 9, Fig. 9 is a kind of LED chip structure schematic diagram provided in an embodiment of the present invention；It is used in the present embodiment
First crystal-bonding adhesive 24 is fixed with reflecting layer 23 by the first LED chip structure 21, using the second crystal-bonding adhesive 25 by the second LED chip knot
Structure 22 and reflecting layer 23 are fixed.
Backlight module provided by the invention, the multiple LED chip knots being arranged in array including substrate, on substrate
Structure, heretofore described LED chip structure include the first LED chip structure and the second LED chip structure being stacked, and
Positioned at reflecting layer between the two, the reflecting layer is by the first LED chip knot between substrate and the second LED chip structure
The light away from substrate surface that structure issues is reflected, to be emitted from the side of the first LED chip structure.
On the one hand, it is used as the first LED of compensation with the light away from substrate surface that reflecting layer issues the first LED chip structure
The lateral amount of light of chip structure, increases the amount of light in region between adjacent LED chip structure, to improve adjacent LED
The brightness in region between chip structure；On the other hand, a LED chip is set due to increasing, is guaranteeing LED chip structure back
In the case where constant from the brightness that substrate surface is emitted, for a LED chip structure, a LED chip is increased newly
Structure equally increases the lateral amount of light of LED chip structure, can also increase going out for region between adjacent LED chip structure
Light quantity, to improve the brightness in region between adjacent chips structure.Two aspect Overlays are that LED chip structure deviates from
The amount of light of substrate surface is constant, and therefore lateral light relative increase can weaken babysbreath bad phenomenon or even LED chip
When brightness between the brightness of locations of structures and adjacent LED chip structure is identical or can not be distinguished, then can thoroughly it eliminate
Babysbreath bad phenomenon.
Based on the same inventive concept, the embodiment of the present invention also provides a kind of production method of backlight module, is used to form
The backlight module provided in the embodiment of face, 0, Figure 10 is manufacturing backlight module method provided in an embodiment of the present invention referring to Figure 1
The production method of flow diagram, backlight module includes:
S101: providing LED chip structure and substrate, LED chip structure include: the first LED chip structure being stacked
With the second LED chip structure, and the reflecting layer between the first LED chip structure and the second LED chip structure, second
LED chip structure is located at the side that the first LED chip structure deviates from substrate；
It is not limited in the present embodiment and the specific method of LED chip structure is provided, the method for providing LED chip structure can wrap
Include following steps:
First transparent substrates, the second transparent substrates and reflecting layer are provided；
Successively two type semiconductor layer of growth regulation, active layer and the first type semiconductor layer in the first transparent substrates form the
One LED chip structure；
Successively two type semiconductor layer of growth regulation, active layer and the first type semiconductor layer in the second transparent substrates, and etch
The first type semiconductor layer and active layer in second transparent substrates form the second LED chip structure；
Reflecting layer is fixed between the first transparent substrates and the second transparent substrates.
Reflecting layer is fixed on the first transparent substrates and the second transparent substrates it should be noted that not limiting in the present embodiment
Between concrete technology, may include:
Reflecting layer is fixed on to the side of the first transparent substrates using viscose；
Reflecting layer is fixed on to the side of the second transparent substrates using viscose away from the surface of the first transparent substrates.
In other embodiments, reflecting layer can also be formed by being deposited in the first transparent substrates, then again by glutinous
Glue is fixed in the second transparent substrates.It is not limited this in the present embodiment.
The above is only a kind of LED chip structure production methods provided in the embodiment of the present invention, in other implementations of the present invention
In can also include other steps, do not elaborated in the present embodiment to this
S102: LED chip structure is assembled on substrate；
LED chip structure is assembled on substrate, can also be adopted by way of the first LED chip structure of formal dress
With the mode of the first LED chip structure of upside-down mounting, by the first pad and the second pad by the first LED chip structure in the present embodiment
In upside-down mounting to substrate.Then the second LED chip structure is electrically connected the first weldering by way of beating gold thread or setting conductive layer
It is on disk and the second pad, the first LED chip structure and the second LED chip structure is in parallel, to receive the power supply control on substrate
System.
1, Figure 11 is provided in an embodiment of the present invention a kind of is inverted in LED chip structure 2 by tin cream 4 referring to Figure 1
Structural schematic diagram on substrate 1.Specific structure may refer to the specific structure in above example, not do in the present embodiment to this
It is described in detail.
S103: fluorescent film is set away from substrate side in LED chip structure.
The mode that fluorescent film is formed in the present embodiment can be for using spraying or membrane pressure mode fixed fluorescent powder formation fluorescence
Film.The phosphor film layer of flood can also be set by deviating from the side of substrate in LED chip structure, this is not done in the present embodiment
It limits.Final structure may refer to Fig. 3 or Fig. 5, not elaborate in the present embodiment to this.
The embodiment of the present invention provides manufacturing backlight module method, is used to form backlight module described in above example,
Obtain that babysbreath bad phenomenon is weaker or backlight module without babysbreath bad phenomenon.
Based on the same inventive concept, a kind of display device is also provided in another embodiment of the invention.Referring to Figure 12
And Figure 13, Figure 12 are a kind of display device structure schematic diagram provided in an embodiment of the present invention, Figure 13 is the section BB ' in Figure 12
Figure；The display device 200 provided in the present embodiment includes: the backlight module 201 in above example.It further include LCD display
Plate 202, liquid crystal display panel 202 are located at the side of backlight module 201, specially light emission side, multiple LED chips of backlight module
Structure is between liquid crystal display panel and substrate.
It should be noted that display device can be mobile phone, tablet computer, television set, display, notes in the present embodiment
Any products or components having a display function such as this computer, Digital Frame, navigator, 3D printing system.
Due to backlight module outgoing light it is more uniform, reduce backlight module appearance babysbreath bad phenomenon or can
To eliminate babysbreath bad phenomenon, therefore, when the display device provided in the present embodiment shows picture, image quality is more preferable.
It should be noted that all the embodiments in this specification are described in a progressive manner, each embodiment weight
Point explanation is the difference from other embodiments, and the same or similar parts between the embodiments can be referred to each other.
It should also be noted that, herein, relational terms such as first and second and the like are used merely to one
Entity or operation are distinguished with another entity or operation, without necessarily requiring or implying between these entities or operation
There are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant are intended to contain
Lid non-exclusive inclusion, so that article or equipment including a series of elements not only include those elements, but also
It including other elements that are not explicitly listed, or further include for this article or the intrinsic element of equipment.Do not having
In the case where more limitations, the element that is limited by sentence "including a ...", it is not excluded that in the article including above-mentioned element
Or there is also other identical elements in equipment.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (13)
1. a kind of backlight module characterized by comprising
Substrate；
The multiple LED chip structures being arranged in array positioned at the substrate side；
And deviate from the fluorescent film of the substrate side positioned at the LED chip structure；
The LED chip structure includes: the first LED chip structure and the second LED chip structure being stacked, and is located at institute
The reflecting layer between the first LED chip structure and second LED chip structure is stated, second LED chip structure is located at institute
State the side that the first LED chip structure deviates from the substrate；
The light of first LED chip structure transmitting is reflected by the reflecting layer, and from the side of first LED chip structure
Outgoing；
The light of second LED chip structure transmitting from away from the substrate surface and second LED chip structure
Side outgoing.
2. backlight module according to claim 1, which is characterized in that first LED chip structure and the 2nd LED
Chip structure includes at least transparent substrates, the first type semiconductor layer, active layer and the second type semiconductor layer.
3. backlight module according to claim 2, which is characterized in that first LED chip structure is along away from the base
The direction of plate successively includes: first type semiconductor layer, the active layer, second type semiconductor layer and the transparent lining
Bottom；
Second LED chip structure successively includes: the transparent substrates, the second type half along the direction away from the substrate
Conductor layer, the active layer and first type semiconductor layer.
4. backlight module according to claim 3, which is characterized in that first LED chip structure passes through the first pad
It is electrically connected on the substrate with the second pad；
First type semiconductor layer of first LED chip structure connects first pad；
Second type semiconductor layer of first LED chip structure connects second pad.
5. backlight module according to claim 3, which is characterized in that first type semiconductor layer is p type semiconductor layer；
Second type semiconductor layer is n type semiconductor layer.
6. backlight module according to claim 5, which is characterized in that the p type semiconductor layer is p-type gallium nitride layer, institute
Stating n type semiconductor layer is n type gallium nitride layer.
7. backlight module according to claim 1, which is characterized in that the material in the reflecting layer is metal.
8. a kind of display device characterized by comprising backlight module described in claim 1-7 any one.
9. display device according to claim 8, which is characterized in that it further include liquid crystal display panel, the liquid crystal display
Panel is located at the side of the backlight module, and multiple LED chip structures of the backlight module are located at the liquid crystal display panel
Between the substrate.
10. a kind of production method of backlight module, which is characterized in that be used to form back described in claim 1-7 any one
The production method of optical mode group, the backlight module includes:
LED chip structure is provided and substrate, the LED chip structure include: the first LED chip structure and second being stacked
LED chip structure, and the reflecting layer between first LED chip structure and second LED chip structure, it is described
Second LED chip structure is located at the side that first LED chip structure deviates from the substrate；
The LED chip structure is assembled on the substrate；
Fluorescent film is set away from the substrate side in the LED chip structure.
11. manufacturing backlight module method according to claim 10, which is characterized in that
The fluorescent film is formed using spraying or membrane pressure mode fixed fluorescent powder.
12. manufacturing backlight module method according to claim 10, which is characterized in that
LED chip structure is provided to specifically include:
First transparent substrates, the second transparent substrates and reflecting layer are provided；
Successively two type semiconductor layer of growth regulation, active layer and the first type semiconductor layer in first transparent substrates form the
One LED chip structure；
Second type semiconductor layer, the active layer and first type is successively grown in second transparent substrates partly to lead
Body layer, and first type semiconductor layer and the active layer in second transparent substrates are etched, form the 2nd LED
Chip structure；
The reflecting layer is fixed between first transparent substrates and second transparent substrates.
13. manufacturing backlight module method according to claim 12, which is characterized in that
It is described that the reflecting layer is fixed between first transparent substrates and second transparent substrates, it specifically includes:
Reflecting layer is fixed on to the side of first transparent substrates using viscose；
Reflecting layer is fixed on to the side of second transparent substrates using viscose away from the surface of first transparent substrates.
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| CN112992876A (en) * | 2019-12-12 | 2021-06-18 | 佛山市国星光电股份有限公司 | Multi-primary-color COB device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050121662A1 (en) * | 2003-12-04 | 2005-06-09 | Lg Electronics Inc. | Surface emitting device, manufacturing method thereof and projection display device using the same |
| CN104103659A (en) * | 2013-04-09 | 2014-10-15 | 东贝光电科技股份有限公司 | Single crystal double light source luminous element |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050121662A1 (en) * | 2003-12-04 | 2005-06-09 | Lg Electronics Inc. | Surface emitting device, manufacturing method thereof and projection display device using the same |
| CN104103659A (en) * | 2013-04-09 | 2014-10-15 | 东贝光电科技股份有限公司 | Single crystal double light source luminous element |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112992876A (en) * | 2019-12-12 | 2021-06-18 | 佛山市国星光电股份有限公司 | Multi-primary-color COB device |
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