TW201350828A - 用於將曝露於極紫外光或深紫外光而劣化之成像感測器恢復之系統及方法 - Google Patents

用於將曝露於極紫外光或深紫外光而劣化之成像感測器恢復之系統及方法 Download PDF

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Publication number
TW201350828A
TW201350828A TW102113161A TW102113161A TW201350828A TW 201350828 A TW201350828 A TW 201350828A TW 102113161 A TW102113161 A TW 102113161A TW 102113161 A TW102113161 A TW 102113161A TW 201350828 A TW201350828 A TW 201350828A
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TW
Taiwan
Prior art keywords
illumination
imaging
imaging sensor
recovery
sources
Prior art date
Application number
TW102113161A
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English (en)
Chinese (zh)
Inventor
吉爾達多 德爾加多
喬瑞 傑尼克
Original Assignee
克萊譚克公司
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Publication date
Application filed by 克萊譚克公司 filed Critical 克萊譚克公司
Publication of TW201350828A publication Critical patent/TW201350828A/zh

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0228—Control of working procedures; Failure detection; Spectral bandwidth calculation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/429—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to measurement of ultraviolet light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J2001/0276—Protection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J2001/0276—Protection
    • G01J2001/0285—Protection against laser damage
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Signal Processing (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Plasma & Fusion (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW102113161A 2012-04-12 2013-04-12 用於將曝露於極紫外光或深紫外光而劣化之成像感測器恢復之系統及方法 TW201350828A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261623557P 2012-04-12 2012-04-12
US13/860,230 US10096478B2 (en) 2012-04-12 2013-04-10 System and method for rejuvenating an imaging sensor degraded by exposure to extreme ultraviolet or deep ultraviolet light

Publications (1)

Publication Number Publication Date
TW201350828A true TW201350828A (zh) 2013-12-16

Family

ID=49328193

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102113161A TW201350828A (zh) 2012-04-12 2013-04-12 用於將曝露於極紫外光或深紫外光而劣化之成像感測器恢復之系統及方法

Country Status (6)

Country Link
US (1) US10096478B2 (enExample)
EP (1) EP2837174A4 (enExample)
JP (1) JP6181154B2 (enExample)
KR (2) KR20140143228A (enExample)
TW (1) TW201350828A (enExample)
WO (1) WO2013155391A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6239881B2 (ja) * 2013-07-10 2017-11-29 浜松ホトニクス株式会社 画像取得装置及び画像取得方法
US10361105B2 (en) * 2014-12-03 2019-07-23 Kla-Tencor Corporation Determining critical parameters using a high-dimensional variable selection model
JP7067875B2 (ja) * 2017-06-06 2022-05-16 アズビル株式会社 火炎検出システム及び劣化指標算出装置
WO2022239110A1 (ja) * 2021-05-11 2022-11-17 ギガフォトン株式会社 ラインセンサの劣化評価方法、スペクトル計測装置及びコンピュータ可読媒体

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4680616A (en) * 1986-05-09 1987-07-14 Chronar Corp. Removal of defects from semiconductors
JP2000223541A (ja) * 1999-01-27 2000-08-11 Hitachi Ltd 欠陥検査装置およびその方法
US6831679B1 (en) * 2000-02-17 2004-12-14 Deepsea Power & Light Company Video camera head with thermal feedback lighting control
JP2004014710A (ja) 2002-06-05 2004-01-15 Nikon Corp 計測方法、被検光学系の調整方法、投影露光方法、撮像装置、計測装置、被検光学系の調整装置、投影露光装置および撮像装置の製造方法
US7110113B1 (en) * 2002-11-13 2006-09-19 Kla-Tencor Technologies Corporation Film measurement with interleaved laser cleaning
US7525659B2 (en) * 2003-01-15 2009-04-28 Negevtech Ltd. System for detection of water defects
GB2399971B (en) 2003-01-22 2006-07-12 Proneta Ltd Imaging sensor optical system
US20070030466A1 (en) * 2004-08-09 2007-02-08 Nikon Corporation Exposure apparatus control method, exposure method and apparatus using the control method, and device manufacturing method
JP5042494B2 (ja) * 2005-12-22 2012-10-03 インテル コーポレイション 散乱光の角度分布を使ったマスクブランクの欠陥の検出および特性評価
US7515822B2 (en) 2006-05-12 2009-04-07 Microsoft Corporation Imaging systems' direct illumination level adjusting method and system involves adjusting operation of image sensor of imaging system based on detected level of ambient illumination
US20080058602A1 (en) 2006-08-30 2008-03-06 Karl Storz Endovision Endoscopic device with temperature based light source control
US20110102565A1 (en) * 2006-09-29 2011-05-05 Xinghua Wang Spectral Imaging System
US8514278B2 (en) 2006-12-29 2013-08-20 Ge Inspection Technologies Lp Inspection apparatus having illumination assembly
US7619227B2 (en) 2007-02-23 2009-11-17 Corning Incorporated Method of reducing radiation-induced damage in fused silica and articles having such reduction
US8559014B2 (en) * 2009-09-25 2013-10-15 Hwan J. Jeong High-resolution, common-path interferometric imaging systems and methods
JP2014514736A (ja) * 2011-03-16 2014-06-19 ケーエルエー−テンカー コーポレイション 薄膜スペクトル純度フィルタコーティングとともに画像センサを使用するｅｕｖ化学線レチクル検査システム

Also Published As

Publication number Publication date
KR20140143228A (ko) 2014-12-15
EP2837174A4 (en) 2016-01-06
JP6181154B2 (ja) 2017-08-16
WO2013155391A1 (en) 2013-10-17
EP2837174A1 (en) 2015-02-18
JP2015521367A (ja) 2015-07-27
US20130295695A1 (en) 2013-11-07
KR102161393B1 (ko) 2020-09-29
US10096478B2 (en) 2018-10-09
KR20190132699A (ko) 2019-11-28

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