KR102161393B1 - Ｅｕｖ 또는 ｄｕｖ 광에의 노출에 의해 열화된 이미징 센서를 재활시키기 위한 시스템 및 방법 - Google Patents

Ｅｕｖ 또는 ｄｕｖ 광에의 노출에 의해 열화된 이미징 센서를 재활시키기 위한 시스템 및 방법 Download PDF

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KR102161393B1
KR102161393B1 KR1020197033892A KR20197033892A KR102161393B1 KR 102161393 B1 KR102161393 B1 KR 102161393B1 KR 1020197033892 A KR1020197033892 A KR 1020197033892A KR 20197033892 A KR20197033892 A KR 20197033892A KR 102161393 B1 KR102161393 B1 KR 102161393B1
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illumination
imaging sensor
rehabilitation
imaging
sensor
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KR20190132699A (ko
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길다르도 델가도
개리 재닉
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케이엘에이 코포레이션
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0228—Control of working procedures; Failure detection; Spectral bandwidth calculation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/429—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to measurement of ultraviolet light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J2001/0276—Protection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J2001/0276—Protection
    • G01J2001/0285—Protection against laser damage
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Computer Hardware Design (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Plasma & Fusion (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020197033892A 2012-04-12 2013-04-12 Ｅｕｖ 또는 ｄｕｖ 광에의 노출에 의해 열화된 이미징 센서를 재활시키기 위한 시스템 및 방법 Active KR102161393B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261623557P 2012-04-12 2012-04-12
US61/623,557 2012-04-12
US13/860,230 2013-04-10
US13/860,230 US10096478B2 (en) 2012-04-12 2013-04-10 System and method for rejuvenating an imaging sensor degraded by exposure to extreme ultraviolet or deep ultraviolet light
PCT/US2013/036335 WO2013155391A1 (en) 2012-04-12 2013-04-12 System and method for rejuvenating an imaging sensor degraded by exposure to extreme ultraviolet or deep ultraviolet light

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020147031526A Division KR20140143228A (ko) 2012-04-12 2013-04-12 Ｅｕｖ 또는 ｄｕｖ 광에의 노출에 의해 열화된 이미징 센서를 재활시키기 위한 시스템 및 방법

Publications (2)

Publication Number Publication Date
KR20190132699A KR20190132699A (ko) 2019-11-28
KR102161393B1 true KR102161393B1 (ko) 2020-09-29

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KR1020197033892A Active KR102161393B1 (ko) 2012-04-12 2013-04-12 Ｅｕｖ 또는 ｄｕｖ 광에의 노출에 의해 열화된 이미징 센서를 재활시키기 위한 시스템 및 방법
KR1020147031526A Ceased KR20140143228A (ko) 2012-04-12 2013-04-12 Ｅｕｖ 또는 ｄｕｖ 광에의 노출에 의해 열화된 이미징 센서를 재활시키기 위한 시스템 및 방법

Family Applications After (1)

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KR1020147031526A Ceased KR20140143228A (ko) 2012-04-12 2013-04-12 Ｅｕｖ 또는 ｄｕｖ 광에의 노출에 의해 열화된 이미징 센서를 재활시키기 위한 시스템 및 방법

Country Status (6)

Country Link
US (1) US10096478B2 (enExample)
EP (1) EP2837174A4 (enExample)
JP (1) JP6181154B2 (enExample)
KR (2) KR102161393B1 (enExample)
TW (1) TW201350828A (enExample)
WO (1) WO2013155391A1 (enExample)

Families Citing this family (4)

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Publication number Priority date Publication date Assignee Title
JP6239881B2 (ja) * 2013-07-10 2017-11-29 浜松ホトニクス株式会社 画像取得装置及び画像取得方法
US10361105B2 (en) * 2014-12-03 2019-07-23 Kla-Tencor Corporation Determining critical parameters using a high-dimensional variable selection model
JP7067875B2 (ja) * 2017-06-06 2022-05-16 アズビル株式会社 火炎検出システム及び劣化指標算出装置
CN117098978A (zh) * 2021-05-11 2023-11-21 极光先进雷射株式会社 线传感器的劣化评价方法、谱计测装置和计算机可读介质

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Publication number Priority date Publication date Assignee Title
US4680616A (en) * 1986-05-09 1987-07-14 Chronar Corp. Removal of defects from semiconductors
JP2000223541A (ja) * 1999-01-27 2000-08-11 Hitachi Ltd 欠陥検査装置およびその方法
US6831679B1 (en) * 2000-02-17 2004-12-14 Deepsea Power & Light Company Video camera head with thermal feedback lighting control
JP2004014710A (ja) 2002-06-05 2004-01-15 Nikon Corp 計測方法、被検光学系の調整方法、投影露光方法、撮像装置、計測装置、被検光学系の調整装置、投影露光装置および撮像装置の製造方法
US7110113B1 (en) * 2002-11-13 2006-09-19 Kla-Tencor Technologies Corporation Film measurement with interleaved laser cleaning
US7525659B2 (en) * 2003-01-15 2009-04-28 Negevtech Ltd. System for detection of water defects
GB2399971B (en) 2003-01-22 2006-07-12 Proneta Ltd Imaging sensor optical system
US20070030466A1 (en) * 2004-08-09 2007-02-08 Nikon Corporation Exposure apparatus control method, exposure method and apparatus using the control method, and device manufacturing method
JP5042494B2 (ja) * 2005-12-22 2012-10-03 インテル コーポレイション 散乱光の角度分布を使ったマスクブランクの欠陥の検出および特性評価
US7515822B2 (en) 2006-05-12 2009-04-07 Microsoft Corporation Imaging systems' direct illumination level adjusting method and system involves adjusting operation of image sensor of imaging system based on detected level of ambient illumination
US20080058602A1 (en) 2006-08-30 2008-03-06 Karl Storz Endovision Endoscopic device with temperature based light source control
US20110102565A1 (en) * 2006-09-29 2011-05-05 Xinghua Wang Spectral Imaging System
US8514278B2 (en) 2006-12-29 2013-08-20 Ge Inspection Technologies Lp Inspection apparatus having illumination assembly
US7619227B2 (en) 2007-02-23 2009-11-17 Corning Incorporated Method of reducing radiation-induced damage in fused silica and articles having such reduction
US8559014B2 (en) * 2009-09-25 2013-10-15 Hwan J. Jeong High-resolution, common-path interferometric imaging systems and methods
WO2012125647A2 (en) * 2011-03-16 2012-09-20 Kla-Tencor Corporation Euv actinic reticle inspection system using imaging sensor with thin film spectral purity filter coating

Also Published As

Publication number Publication date
TW201350828A (zh) 2013-12-16
EP2837174A1 (en) 2015-02-18
US20130295695A1 (en) 2013-11-07
JP6181154B2 (ja) 2017-08-16
US10096478B2 (en) 2018-10-09
KR20140143228A (ko) 2014-12-15
KR20190132699A (ko) 2019-11-28
JP2015521367A (ja) 2015-07-27
WO2013155391A1 (en) 2013-10-17
EP2837174A4 (en) 2016-01-06

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